CN108321221A - Graphene solar cell with micro-cavity structure and preparation method thereof - Google Patents
Graphene solar cell with micro-cavity structure and preparation method thereof Download PDFInfo
- Publication number
- CN108321221A CN108321221A CN201810308774.9A CN201810308774A CN108321221A CN 108321221 A CN108321221 A CN 108321221A CN 201810308774 A CN201810308774 A CN 201810308774A CN 108321221 A CN108321221 A CN 108321221A
- Authority
- CN
- China
- Prior art keywords
- graphene
- silicon
- layer
- silicon dioxide
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 110
- 238000002360 preparation method Methods 0.000 title claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 135
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 68
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 60
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 34
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 10
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 90
- 238000000137 annealing Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 238000005234 chemical deposition Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 150000001336 alkenes Chemical class 0.000 claims description 6
- 230000002708 enhancing effect Effects 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 98
- 238000000605 extraction Methods 0.000 description 12
- 239000002356 single layer Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Carbon And Carbon Compounds (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of graphene solar cells with micro-cavity structure, including N-shaped monocrystalline silicon, silicon dioxide layer is arranged in the one side of the N-shaped monocrystalline silicon, the silicon dioxide layer is the cyclic structure for having through-hole, the surface of the silicon dioxide layer and N-shaped monocrystalline silicon surface the first graphene film layer of setting exposed by silicon dioxide layer through-hole, in the first graphene film layer surface positioned at the region of the silicon dioxide layer through-hole, silicon nitride film is set, the second graphene film layer is arranged in the silicon nitride film surface, the electrode before the first graphene film layer surface setting of the peripheral regions positioned at the silicon dioxide layer through-hole, metallic film back electrode is arranged in the another side of the N-shaped monocrystalline silicon.The present invention utilizes the regulation and control photon absorption efficiency of graphene/silicon nitride/graphene microcavity, realizes the raising of graphene silica-based solar cell transfer efficiency battery, has feature simple in structure, efficient, suitable for mass production.
Description
Technical field
The present invention relates to a kind of solar cells and preparation method thereof, more particularly, to a kind of graphite with micro-cavity structure
Alkene solar cell and preparation method thereof.
Background technology
Energy and environment problem is always to influence the hot issue of human survival and development.Solar energy as one kind take no
To the greatest extent, nexhaustible regenerative resource, utilization receive widest concern.Develop silicon substrate the most ripe in recent years
Semiconductor PN solar cell faces several big problems such as high energy consumption, high cost, high pollution, by graphene film and monocrystalline silicon knot
The superiority developments such as cheap, environmental friendly are rapid with its manufacturing cost for the graphene silicon substrate schottky junction solar cell that conjunction is constituted.
Graphene is a kind of typical semimetal, and work function is about 4.8ev, as half of graphene and work function less than the value
When conductor combines, you can form schottky junction, and be further assembled into solar cell, obtain 1.0%~2.0% conversion effect
Rate (Xinming Li, Hongwei Zhu, et al.Adv.Mater.2010,22,2743-2748)；Miao etc. combines silicon face
The doping of oxide passivation layer and graphene the solar cell (Xiaochang that transfer efficiency is up to 8.6% has been prepared
Miao,Sefaattin Tongay,et al.Nano Lett.2012,12,2745-2750)。
Compared with the silica-based solar cell of traditional p-n or p-i-n structure, the battery structure letter of graphene silicon based hetero-junction
It is single, effectively reduce the cost of solar cell.The graphene solar cell photoelectric being made of at present single schottky junction
Transfer efficiency is not still high.Graphene silica-based solar cell disclosed in Chinese patent CN103840017A, on monocrystalline silicon piece
Silicon dioxide layer is set, and silicon dioxide layer is the cyclic structure for having through-hole, the surface of silicon dioxide layer and by silicon dioxide layer
Graphene film is arranged in the monocrystalline silicon sheet surface of through-hole exposure, and the monocrystalline silicon sheet surface exposed by silicon dioxide layer through-hole is additionally provided with
Gate line electrode.The potential barrier size that graphene silicon substrate schottky junction is adjusted by the regulating and controlling effect of gate line electrode, reduces silicon face
Charge recombination effect improves the efficiency of carrier separation and transmission, to improve the photoelectric conversion efficiency of battery.But it is because existing
Have that structure is not high for the absorptivity of incident light, solar cell photoelectric transfer efficiency is appointed to be improved.
Invention content
It is an object of the present invention to provide a kind of graphene solar cells with micro-cavity structure, solve existing stone
Black alkene silica-based solar cell is because of the problem not high to absorbing incident light photoelectric conversion efficiency caused by inefficient.The present invention's
Another purpose is to provide a kind of graphene solar cell and preparation method thereof with micro-cavity structure.
Technical solution of the present invention is as follows：A kind of graphene solar cell with micro-cavity structure, including N-shaped monocrystalline silicon,
Silicon dioxide layer is arranged in the one side of the N-shaped monocrystalline silicon, and the silicon dioxide layer is the cyclic structure for having through-hole, the dioxy
The first graphene film layer is arranged in the surface of SiClx layer and the N-shaped monocrystalline silicon surface exposed by silicon dioxide layer through-hole, positioned at
Silicon nitride film, the silicon nitride film table is arranged in the first graphene film layer surface in the region of the silicon dioxide layer through-hole
The second graphene film layer is arranged in face, in the first graphene film layer table of the peripheral regions positioned at the silicon dioxide layer through-hole
Metallic film back electrode is arranged in the another side of electrode before the setting of face, the N-shaped monocrystalline silicon.
Preferably, the doping concentration of the N-shaped monocrystalline silicon is 1 × 1011~1 × 1015cm-3。
Preferably, the thickness of the N-shaped monocrystalline silicon is 1~2000 μm.
Preferably, the thickness of the silicon dioxide layer is 100~1000nm.
Preferably, the first graphene film layer forms for several layer graphene films are stacked, the first graphene film
Layer thickness is 0.5~10nm.
Preferably, the silicon nitride film is single thin film, and silicon nitride film thickness is 0.05~5 μm, refractive index 2.0
~3.0.
Preferably, the second graphene film layer forms for several layer graphene films are stacked, the second graphene film
Layer thickness is 1~50nm.
A kind of preparation method of the graphene solar cell with micro-cavity structure, including step：The one of N-shaped monocrystalline silicon
Face deposited silicon dioxide layer, and silicon dioxide layer is etched to form through-hole, it is carried on the back in the another side deposited metal film of N-shaped monocrystalline silicon
Electrode；The n that first graphene film layer of preparation is transferred to the surface of silicon dioxide layer and is exposed by silicon dioxide layer through-hole
Type monocrystalline silicon surface；Enhanced using ion in the first graphene film layer surface positioned at the region of the silicon dioxide layer through-hole
Chemical deposition technique prepares silicon nitride film, and is made annealing treatment；Second graphene film layer of preparation is transferred to nitridation
Silicon film surface；Screen printing is used in the first graphene film layer surface of the peripheral regions positioned at the silicon dioxide layer through-hole
Electrode before prepared by brush.
Further, it is placed in nitrogen or argon gas atmosphere and carries out when the annealing, annealing temperature is 800~1400
DEG C, 40~400min of soaking time.
The advantages of technical solution provided by the present invention, is：Pass through the technique and thickness tune of adjusting silicon nitride in the present invention
The photon absorption efficiency for controlling graphene/silicon nitride/graphene microcavity, passes through increase merely with silicon nitride with existing as antireflective film
The technology that light path improves photon absorption efficiency is compared, and the mechanism that the program can be coupled based on wave induced oscillation realizes that incident photon exists
The effect that the enhancing of special spectrum section absorbs, and then the raising of graphene silica-based solar cell transfer efficiency battery.The present invention
Have the characteristics that simple in structure, inexpensive and efficient, required processing step is maturation process, is suitable for batch production.
Description of the drawings
Fig. 1 is the structural schematic diagram for the graphene solar cell that embodiment 1 has micro-cavity structure；
Fig. 2 is the structural schematic diagram for the graphene solar cell that embodiment 4 has micro-cavity structure；
Fig. 3 is the i-v curve test result comparison diagram of the graphene solar cell of each embodiment and comparative example.
Specific implementation mode
With reference to embodiment, the invention will be further described, but not as a limitation of the invention.
Shown in Fig. 1, the graphene solar cell with micro-cavity structure of embodiment 1 is made by following manner：
It it is first 2 μm in thickness, doping concentration is 1 × 1012cm-3The front surface of N-shaped monocrystalline silicon 1 to deposit a layer thickness be 300nm
Silicon dioxide layer 2, and etch a through-hole in center and form cyclic structure；By the first graphene of the single layer 2nm thickness prepared
1 surface of N-shaped monocrystalline silicon that film layer 3 is transferred to the surface of silicon dioxide layer 2 and is exposed by 2 through-hole of silicon dioxide layer；Positioned at
3 surface of the first graphene film layer of the peripheral regions of 2 through-hole of silicon dioxide layer is using electrode before silk-screen printing preparation Ag, one end
Anode of the extraction wire as photovoltaic cell；Then in the first graphene film layer 3 positioned at the region of 2 through-hole of silicon dioxide layer
It is 0.5 μm that surface prepares thickness in monolayer using ion enhancing chemical deposition technique, and the silicon nitride film 5 that refractive index is 2.2 is gone forward side by side
Row annealing, peak lehr temperature are 1000 DEG C, annealing time 300min, ambiance Ar；Again by the single layer of preparation
Second graphene film layer 6 of 20nm thickness is transferred to 5 surface of silicon nitride film, constitutes graphene/silicon nitride/graphene microcavity knot
Structure；Aluminium film is finally prepared as back electrode 7 using sputtering technology in the rear surface of N-shaped monocrystalline silicon 1, extraction wire is as photovoltaic
The cathode of battery.
The graphene solar cell with micro-cavity structure of embodiment 2 is made by following manner：It is first 20 μ in thickness
M, doping concentration are 1 × 1011cm-3N-shaped monocrystalline silicon 1 front surface deposit a layer thickness be 100nm silicon dioxide layer 2, and
A through-hole, which is etched, in center forms cyclic structure；First graphene film layer 3 of the single layer 0.5nm thickness prepared is transferred to
The surface of silicon dioxide layer 2 and 1 surface of N-shaped monocrystalline silicon exposed by 2 through-hole of silicon dioxide layer；Logical positioned at silicon dioxide layer 2
3 surface of the first graphene film layer of the peripheral regions in hole is using electrode 4 before silk-screen printing preparation Ag, one end extraction wire conduct
The anode of photovoltaic cell；Then ion is utilized on 3 surface of the first graphene film layer positioned at the region of 2 through-hole of silicon dioxide layer
It is 0.05 μm that enhancing chemical deposition technique, which prepares thickness in monolayer, and refractive index is 2.0 silicon nitride film 5, and is made annealing treatment,
Peak lehr temperature is 1000 DEG C, annealing time 300min, ambiance Ar；Again by the second of the single layer 1nm thickness of preparation
Graphene film layer 6 is transferred to 5 surface of silicon nitride film, constitutes graphene/silicon nitride/graphene micro-cavity structure；Finally in N-shaped
The rear surface of monocrystalline silicon 1 prepares aluminium film as back electrode 7, cathode of the extraction wire as photovoltaic cell using sputtering technology.
The graphene solar cell with micro-cavity structure of embodiment 3 is made by following manner：It is in thickness first
1000 μm, doping concentration is 1 × 1015cm-3N-shaped monocrystalline silicon 1 front surface deposit a layer thickness be 500nm silica
Layer 2, and etch a through-hole in center and form cyclic structure；By 3 turns of the first graphene film layer of the single layer 2nm thickness prepared
1 surface of N-shaped monocrystalline silicon for moving to the surface of silicon dioxide layer 2 and being exposed by 2 through-hole of silicon dioxide layer；Positioned at silicon dioxide layer
3 surface of the first graphene film layer of the peripheral regions of 2 through-holes is using electrode 4 before silk-screen printing preparation Ag, one end extraction wire
Anode as photovoltaic cell；Then in 3 surface of the first graphene film layer utilization positioned at the region of 2 through-hole of silicon dioxide layer
It is 3.5 μm that ion enhancing chemical deposition technique, which prepares thickness in monolayer, and refractive index is 2.8 silicon nitride film 5, and carries out at annealing
Reason, peak lehr temperature are 1000 DEG C, annealing time 300min, ambiance Ar；Again by the single layer 10nm thickness of preparation
Second graphene film layer 6 is transferred to 5 surface of silicon nitride film, constitutes graphene/silicon nitride/graphene micro-cavity structure；Finally
Aluminium film is prepared as back electrode 7 using sputtering technology in the rear surface of N-shaped monocrystalline silicon 1, extraction wire is as photovoltaic cell
Cathode.
Shown in Fig. 2, the graphene solar cell with micro-cavity structure of embodiment 4 is made by following manner：
It it is first 1 μm in thickness, doping concentration is 1 × 1014cm-3N-shaped monocrystalline silicon 10 front surface deposit a layer thickness be 300nm
Silicon dioxide layer 11, and etch through-hole in center and form cyclic structure；By the first of the total 7.5nm thickness of the bilayer prepared
10 table of N-shaped monocrystalline silicon that graphene film layer 12 is transferred to the surface of silicon dioxide layer 11 and is exposed by 11 through-hole of silicon dioxide layer
Face；Ag is prepared using silk-screen printing on 12 surface of the first graphene film layer of the peripheral regions positioned at 11 through-hole of silicon dioxide layer
Preceding electrode 13, anode of one end extraction wire as photovoltaic cell；Then positioned at the of the region of 11 through-hole of silicon dioxide layer
It is 0.2 μm that one graphene film layer, 12 surface prepares thickness in monolayer using ion enhancing chemical deposition technique, and refractive index is 2.2
Silicon nitride film 14, and made annealing treatment, peak lehr temperature is 1000 DEG C, annealing time 300min, and ambiance is
Ar；The second graphene film layer 15 of the total 30nm thickness of the bilayer of preparation is transferred to 14 surface of silicon nitride film again, constitutes graphite
Alkene/silicon nitride/graphene micro-cavity structure；Aluminium film conduct is finally prepared using sputtering technology in the rear surface of N-shaped monocrystalline silicon 10
Back electrode 16, cathode of the extraction wire as photovoltaic cell.
The graphene solar cell with micro-cavity structure of embodiment 5 is made by following manner：It is in thickness first
1200 μm, doping concentration is 1 × 1015cm-3N-shaped monocrystalline silicon front surface deposit a layer thickness be 800nm silica
Layer, and etch a through-hole in center and form cyclic structure；By the first graphene film layer of prepare three layers of total 10nm thickness
The N-shaped monocrystalline silicon surface for being transferred to the surface of silicon dioxide layer and being exposed by silicon dioxide layer through-hole；Positioned at silicon dioxide layer
First graphene film layer surface of the peripheral regions of through-hole is using electrode before silk-screen printing preparation Ag, one end extraction wire conduct
The anode of photovoltaic cell；Then increased using ion in the first graphene film layer surface positioned at the region of silicon dioxide layer through-hole
It is 5 μm that extensive chemical deposition technique, which prepares thickness in monolayer, and refractive index is 3.0 silicon nitride film, and is made annealing treatment, peak of annealing
It is 1000 DEG C, annealing time 300min, ambiance Ar to be worth temperature；Again by the second graphite of the total 40nm thickness of the bilayer of preparation
Alkene film layer is transferred to silicon nitride film surface, constitutes graphene/silicon nitride/graphene micro-cavity structure；Finally in N-shaped monocrystalline silicon
Rear surface using sputtering technology prepare aluminium film as back electrode, cathode of the extraction wire as photovoltaic cell.
The graphene solar cell with micro-cavity structure of embodiment 6 is made by following manner：It is in thickness first
2000 μm, doping concentration is 1 × 1014cm-3N-shaped monocrystalline silicon front surface deposit a layer thickness be 1000nm silica
Layer, and etch a through-hole in center and form cyclic structure；By the first graphene film layer of prepare three layers of total 10nm thickness
The N-shaped monocrystalline silicon surface for being transferred to the surface of silicon dioxide layer and being exposed by silicon dioxide layer through-hole；Positioned at silicon dioxide layer
First graphene film layer surface of the peripheral regions of through-hole is using electrode before silk-screen printing preparation Ag, one end extraction wire conduct
The anode of photovoltaic cell；Then increased using ion in the first graphene film layer surface positioned at the region of silicon dioxide layer through-hole
It is 4 μm that extensive chemical deposition technique, which prepares thickness in monolayer, and refractive index is 3.0 silicon nitride film, and is made annealing treatment, peak of annealing
It is 1000 DEG C, annealing time 300min, ambiance Ar to be worth temperature；Again by the second graphite of three layers of preparation total 50nm thickness
Alkene film layer is transferred to silicon nitride film surface, constitutes graphene/silicon nitride/graphene micro-cavity structure；Finally in N-shaped monocrystalline silicon
Rear surface using sputtering technology prepare aluminium film as back electrode, cathode of the extraction wire as photovoltaic cell.
The structure of the single side graphene solar cell of comparative example, by technical side disclosed in Chinese patent CN101771092B
Case：Layer of oxide layer is deposited in silicon substrate surface, then window is etched in silicon chip surface using photolithography method and exposes silicon substrate
Bottom surface；Graphene film is transferred to silicon chip surface, electrode before being prepared with silver paste finally prepares back electrode in silicon chip back side,
Positive and negative electrode is drawn with conducting wire, forms graphene silicon based cells.
The IV test curves of each embodiment and comparative example graphene solar cell are as shown in Figure 3, it can be seen that use
Technical solution of the present invention, the photoelectricity compared with single side graphene solar cell of the graphene solar cell with micro-cavity structure turn
Efficiency is changed to be largely increased.
Claims (9)
1. a kind of graphene solar cell with micro-cavity structure, which is characterized in that including N-shaped monocrystalline silicon, the N-shaped monocrystalline
Silicon dioxide layer is arranged in the one side of silicon, and the silicon dioxide layer is the cyclic structure for having through-hole, the table of the silicon dioxide layer
Face and N-shaped monocrystalline silicon surface the first graphene film layer of setting exposed by silicon dioxide layer through-hole, positioned at the titanium dioxide
Silicon nitride film, the silicon nitride film surface setting second is arranged in the first graphene film layer surface in the region of silicon layer through-hole
Graphene film layer, the electricity before the first graphene film layer surface setting of the peripheral regions positioned at the silicon dioxide layer through-hole
Metallic film back electrode is arranged in the another side of pole, the N-shaped monocrystalline silicon.
2. the graphene solar cell according to claim 1 with micro-cavity structure, which is characterized in that the N-shaped list
The doping concentration of crystal silicon is 1 × 1011~1 × 1015cm-3。
3. the graphene solar cell according to claim 1 with micro-cavity structure, which is characterized in that the N-shaped list
The thickness of crystal silicon is 1~2000 μm.
4. the graphene solar cell according to claim 1 with micro-cavity structure, which is characterized in that the titanium dioxide
The thickness of silicon layer is 100~1000nm.
5. the graphene solar cell according to claim 1 with micro-cavity structure, which is characterized in that first stone
Black alkene film layer, which is that several layer graphene films are stacked, to be formed, and the first graphene film layer thickness is 0.5~10nm.
6. the graphene solar cell according to claim 1 with micro-cavity structure, which is characterized in that the silicon nitride
Film is single thin film, and silicon nitride film thickness is 0.05~5 μm, and refractive index is 2.0~3.0.
7. the graphene solar cell according to claim 1 with micro-cavity structure, which is characterized in that second stone
Black alkene film layer, which is that several layer graphene films are stacked, to be formed, and the second graphene film layer thickness is 1~50nm.
8. a kind of side preparing the graphene solar cell with micro-cavity structure described in any one of claim 1 to 7
Method, which is characterized in that including step：In a face deposited silicon dioxide layer of N-shaped monocrystalline silicon, and silicon dioxide layer is etched to be formed
Through-hole, in the another side deposited metal film back electrode of N-shaped monocrystalline silicon；First graphene film layer of preparation is transferred to dioxy
The surface of SiClx layer and the N-shaped monocrystalline silicon surface exposed by silicon dioxide layer through-hole；Positioned at the silicon dioxide layer through-hole
The first graphene film layer surface in region prepares silicon nitride film using ion enhancing chemical deposition technique, and carries out at annealing
Reason；Second graphene film layer of preparation is transferred to silicon nitride film surface；Positioned at the four of the silicon dioxide layer through-hole
Electrode before the first graphene film layer surface in all regions is prepared using silk-screen printing.
9. the preparation method of the graphene solar cell according to claim 8 with micro-cavity structure, which is characterized in that
It being placed in nitrogen or argon gas atmosphere and carries out when the annealing, annealing temperature is 800~1400 DEG C, soaking time 40~
400min。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810308774.9A CN108321221B (en) | 2018-04-09 | 2018-04-09 | Graphene solar cell with microcavity structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810308774.9A CN108321221B (en) | 2018-04-09 | 2018-04-09 | Graphene solar cell with microcavity structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108321221A true CN108321221A (en) | 2018-07-24 |
| CN108321221B CN108321221B (en) | 2024-06-21 |
Family
ID=62896227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810308774.9A Active CN108321221B (en) | 2018-04-09 | 2018-04-09 | Graphene solar cell with microcavity structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108321221B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698249A (en) * | 2019-01-15 | 2019-04-30 | 常熟理工学院 | A kind of semiconductor chip and preparation method thereof with special wavelength light absorption peak |
| CN109888047A (en) * | 2019-01-15 | 2019-06-14 | 常熟理工学院 | Graphene solar battery and preparation method thereof based on silicon nano hole array |
| CN111244222A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355671A (en) * | 2015-11-23 | 2016-02-24 | 浙江昱辉阳光能源江苏有限公司 | Wide-spectrum efficient solar photovoltaic cell |
| CN205900557U (en) * | 2016-07-29 | 2017-01-18 | 常熟理工学院 | Silica -based solar cell of spectrum absorption enhancing agent type graphite alkene |
| CN208368521U (en) * | 2018-04-09 | 2019-01-11 | 常熟理工学院 | Graphene solar battery with micro-cavity structure |
-
2018
- 2018-04-09 CN CN201810308774.9A patent/CN108321221B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355671A (en) * | 2015-11-23 | 2016-02-24 | 浙江昱辉阳光能源江苏有限公司 | Wide-spectrum efficient solar photovoltaic cell |
| CN205900557U (en) * | 2016-07-29 | 2017-01-18 | 常熟理工学院 | Silica -based solar cell of spectrum absorption enhancing agent type graphite alkene |
| CN208368521U (en) * | 2018-04-09 | 2019-01-11 | 常熟理工学院 | Graphene solar battery with micro-cavity structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698249A (en) * | 2019-01-15 | 2019-04-30 | 常熟理工学院 | A kind of semiconductor chip and preparation method thereof with special wavelength light absorption peak |
| CN109888047A (en) * | 2019-01-15 | 2019-06-14 | 常熟理工学院 | Graphene solar battery and preparation method thereof based on silicon nano hole array |
| CN111244222A (en) * | 2020-01-20 | 2020-06-05 | 中国科学院半导体研究所 | Hexagonal boron nitride ultraviolet light detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108321221B (en) | 2024-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI463682B (en) | Heterojunction solar cell having intrinsic amorphous silicon film | |
| CN102709402B (en) | Thin film solar cell of graphic based metal substrate and preparation method thereof | |
| KR101448448B1 (en) | Thin film type Solar Cell and Method for manufacturing the same | |
| CN106449780A (en) | Silicon heterojunction solar cell with oxide carrier transport layer and preparation method of silicon heterojunction solar cell | |
| CN208548372U (en) | A kind of double-junction solar battery | |
| CN110061136A (en) | A kind of back-contact perovskite solar cell and preparation method thereof | |
| CN109285897A (en) | Efficient passivation contact crystalline silicon solar cell and preparation method thereof | |
| CN106024917B (en) | A kind of solar battery sheet and solar cell module | |
| AU2020429125A1 (en) | Tandem photovoltaic device and production method | |
| CN114678430B (en) | Electron selective passivation contact structure, solar cell and preparation method | |
| CN108321221A (en) | Graphene solar cell with micro-cavity structure and preparation method thereof | |
| CN102938429A (en) | Antireflection heterojunction solar cell and preparation method thereof | |
| CN108735828A (en) | Heterojunction back contact solar cell and preparation method thereof | |
| CN113471305A (en) | Selective passivation contact structure battery and preparation method thereof | |
| CN102364691A (en) | Crystalline silicon solar battery with upper/lower conversion luminescent structure and manufacturing method for crystalline silicon solar battery | |
| CN106653923B (en) | A kind of N-type PERT double-side cell structures of suitable sheet and preparation method thereof | |
| CN208368521U (en) | Graphene solar battery with micro-cavity structure | |
| CN106684179A (en) | Antimony selenide double-junction thin-film solar cell and preparation method thereof | |
| CN101834215B (en) | Silicon quantum dot solar cell and preparation method thereof | |
| KR20090128984A (en) | Thin film type solar cell and method for manufacturing the same | |
| CN115985992A (en) | N-type monocrystalline silicon HBC solar cell structure and preparation method thereof | |
| CN214753765U (en) | Perovskite tandem solar cell | |
| CN208111466U (en) | Graphene double-sided solar battery | |
| CN111900228B (en) | Electron selective contact for crystalline silicon solar cell | |
| CN104952961B (en) | A kind of n CdSxSe1‑xFilm/Graphene schottky junction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |