CN214753765U - Perovskite tandem solar cell - Google Patents

Abstract

The utility model discloses a perovskite tandem solar cell, which comprises a silicon solar cell and a perovskite cell arranged above the silicon solar cell, wherein the perovskite cell comprises a transparent conducting layer, and a hole transmission layer or an electron transmission layer, a perovskite layer, an electron transmission layer or a hole transmission layer and a TCO layer which are sequentially arranged on the transparent conducting layer; the silicon solar cell comprises a silicon substrate, and a diffusion layer and a first passivation layer which are arranged on the silicon substrate; the transparent conducting layer is arranged on the first passivation layer, a plurality of small holes penetrating through the diffusion layer are formed in the first passivation layer, and the transparent conducting layer penetrates through the small holes to be in contact with the diffusion layer. Implement the utility model discloses, can effectively promote the contact of silicon solar cell and perovskite battery, promote stromatolite battery efficiency.

Description

Perovskite tandem solar cell

Technical Field

The utility model relates to a crystalline silicon solar cell technical field especially relates to a perovskite tandem solar cell.

Background

In recent years, the productivity of a unijunction monocrystalline silicon PERC battery is rapidly expanded and becomes the main flow battery with the lowest mass production and cost, but the conversion efficiency of the PERC battery is in a bottleneck at present and is difficult to be improved continuously. Therefore, a laminated cell is developed in the industry, namely, other cells are laminated with a solar cell, so that the full-band spectrum of solar energy is more fully utilized, and the conversion efficiency is improved.

On the other hand, the perovskite cell can fully utilize the sunlight with short wavelength (380-500nm) to make up for the defect of insufficient utilization of short-wave light by the crystalline silicon cell. Therefore, perovskite-solar cell tandem cells have become a research hotspot in the field. For example, patent CN111987227A discloses a method for manufacturing a silicon/perovskite tandem solar cell.

However, the conventional perovskite-solar cell laminated cell has the problem of poor cell contact, which results in low conversion efficiency. In addition, the current laminated battery mainly adopts an N-type HJT battery, but the HJT battery has high cost, and the popularization of the laminated battery is limited.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem that a perovskite tandem solar laminated cell is provided, its battery contact is good, and conversion efficiency is high.

In order to solve the technical problem, the utility model provides a perovskite tandem solar cell, including silicon solar cell and locate its above perovskite battery, perovskite battery includes transparent conducting layer and locates hole transport layer or electron transport layer, perovskite layer, electron transport layer or hole transport layer and TCO layer on the transparent conducting layer in proper order;

the silicon solar cell comprises a silicon substrate, and a diffusion layer and a first passivation layer which are arranged on the silicon substrate;

the transparent conducting layer is arranged on the first passivation layer, a plurality of small holes penetrating through the diffusion layer are formed in the first passivation layer, and the transparent conducting layer penetrates through the small holes to be in contact with the diffusion layer.

As an improvement of the above technical solution, a total cross-sectional area of the small holes: the area of the first passivation layer is (0.5-20): 100.

as an improvement of the technical scheme, the hole transport layer is made of PTAA and NiO_x、 P₃HT、V₂O₅、MoO_x、PEDOT:PSS、WO_x、Sprio-OMeTAD、CuSCN、 Cu₂O, CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, m-MTDATA, and TAPC, with a thickness of 1-500 nm;

the forbidden band width of the perovskite layer is 1.5-2.5eV, and the thickness of the perovskite layer is 50-30000 nm;

the electron transport layer is made of SnO₂、TiO₂、ZnO、ZrO₂、C60、C70、PCBM、 TiSnO_x、SnZnO_xIs 1-500nm thick.

As an improvement of the technical scheme, the TCO layer is made of indium tin oxide, and the thickness of the TCO layer is 1-500 nm;

the transparent conducting layer is made of indium tin oxide, and the thickness of the transparent conducting layer is 1-500 nm.

As an improvement of the above technical solution, a first antireflection layer is disposed between the transparent conductive layer and the first passivation layer, and the small hole penetrates through the first antireflection layer;

the first antireflection layer is made of SiO_x、SiN_x、AlO_x、SiC_x、SiC_xN_y、SiO_xN_yIs 1-100nm thick.

As an improvement of the above technical solution, the solar cell is a PERC back passivated cell, an HJT cell, an IBC cell, a Topcon cell or a POLO cell.

As an improvement of the above technical solution, the solar cell is a Topcon cell, and the silicon substrate is a p-type silicon wafer;

the doped layer is P⁺A doping layer with a doping concentration of 10¹⁹-10²¹atom/cm³。

As an improvement of the above technical solution, the P⁺The doping layer, the first passivation layer and the first antireflection layer are sequentially arranged on the front surface of the silicon substrate;

the back of the silicon substrate is provided with a tunneling layer and N⁺The polycrystalline silicon layer, the second passivation layer, the second antireflection layer, the first electrode layer and the second electrode layer;

the first electrode layer is in contact with the silicon substrate through the second passivation layer and the second antireflection layer; the second electrode layer and the N⁺The polysilicon layer contacts.

As an improvement of the above technical solution, the first electrode layer is a silver electrode layer, and the second electrode layer is an aluminum electrode layer.

As an improvement of the technical proposal, the thickness of the tunneling layer is 0.5-2nm,

said N is⁺The doping concentration of the polysilicon layer is 5 × 10¹⁹-1×10²¹atom/cm³The thickness of the film is 20-300 nm.

Implement the utility model discloses, following beneficial effect has:

1. the utility model discloses a perovskite tandem solar cell, including silicon solar cell and the perovskite battery who sets up above it, wherein, silicon solar cell includes silicon substrate, diffusion layer and first passivation layer; the bottom of the perovskite laminated cell is provided with a transparent conducting layer, and the transparent conducting layer is in contact with the diffusion layer through a plurality of small holes penetrating through the first passivation layer. The contact structure greatly improves the contact between the perovskite cell and the silicon solar cell and improves the conversion efficiency of the laminated cell.

2. The utility model provides a bottom battery adopts P type silicon chip Topcon battery, and P⁺The contact area adopts the aluminum electrode, so that the production cost of the bottom layer battery is effectively reduced, and the production cost of the laminated battery is reduced. Just the utility model provides a Topcon battery conversion efficiency is higher.

Drawings

Fig. 1 is a schematic structural diagram of a perovskite tandem solar cell according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.

Referring to fig. 1, the present embodiment provides a perovskite tandem solar cell, in which the upper layer cell employs a perovskite cell 1 and the lower layer cell employs a silicon solar cell 2. The perovskite cell 1 comprises a transparent conductive layer 11, and a hole transport layer or an electron transport layer 12, a perovskite layer 13, an electron transport layer or a hole transport layer 14 and a TCO layer 15 which are sequentially arranged on the transparent conductive layer 11.

Wherein the hole transport layer 12/14 is made of PTAA, NiO_x、P₃HT、V₂O₅、MoO_x、 PEDOT:PSS、WO_x、Sprio-OMeTAD、CuSCN、Cu₂O, CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, m-MTDATA, and TAPC. Specifically, the thickness of the hole transport layer 12/14 is 1 to 500 nm; preferably 100-500 nm.

Wherein the electron transport layer 12/14 is made of SnO₂、TiO₂、ZnO、ZrO₂、C60、C70、 PCBM、TiSnO_x、SnZnO_xIs prepared by one of the following steps. Specifically, the thickness of the electron transport layer 12/14 is 1-500 nm; preferably 100-500 nm.

Wherein, the forbidden band width of the perovskite layer 13 is 1.5-2.5eV, and the thickness thereof is 50-30000 nm. Preferably, the thickness of the perovskite layer is 2000-30000 nm.

The TCO layer 15 is made of one or more of ITO (indium tin oxide), IZO, AZO, but is not limited thereto. Preferably, the TCO layer 15 is made of indium tin oxide. The thickness of the TCO layer 15 is 1-500nm, preferably 100-500 nm.

The transparent conductive layer 11 is made of one or more of ITO (indium tin oxide), IZO, AZO, but not limited thereto. Preferably, the transparent conductive layer 11 is made of indium tin oxide. The thickness of the transparent conductive layer 1 is 1-500nm, preferably 100-500 nm.

Specifically, the silicon solar cell 2 comprises a silicon substrate 21, a diffusion layer 22 and a first passivation layer 23, the transparent conducting layer 11 is arranged on the first passivation layer 23, a plurality of small holes 24 are formed in the first passivation layer 23, and the transparent conducting layer 11 penetrates through the small holes 24 to be in contact with the diffusion layer 22.

Further, in order to improve the utilization efficiency of sunlight, a first antireflection layer 25 is further disposed between the first passivation layer 22 and the transparent conductive layer 11, and the first antireflection layer is made of SiO_x、SiN_x、 AlO_x、SiC_x、SiC_xN_y、SiO_xN_yIs made of one or more of (1) to (100) nm, preferably 8 to (100) nm.

Accordingly, in order to promote the contact of the perovskite cell 1 and the silicon solar cell 2, the small hole 24 should penetrate the first anti-reflection layer 25 and the first passivation layer 23. Wherein the apertures 24 are formed by a laser grooving process, and the total open area of the apertures 24 is 0.5-20% of the area of the first passivation layer 23, preferably 4-10%.

Specifically, in the present invention, the silicon solar cell may be a PERC back passivation cell, an HJT cell, an IBC cell, a Topcon cell, or a POLO cell, but is not limited thereto. Preferably, in the present embodiment, the silicon solar cell 2 is a Topcon cell.

Specifically, a diffusion layer 22, a first passivation layer 23 and a first antireflection layer 25 are sequentially arranged on the front surface of the silicon substrate 21; the back surface of the substrate is sequentially provided with a tunneling layer 26, a doped polysilicon layer 27, a second passivation layer 28, a second anti-reflection layer 29, a first electrode layer 30 and a second electrode layer 31, wherein the doped polysilicon layer 27 is distributed in an interdigital structure.

Specifically, the silicon substrate 21 is a p-type silicon wafer or an n-type silicon wafer, and is preferably a p-type silicon wafer, which is low in cost. The diffusion layer 22 may be P⁺Doped layers or N⁺Doped layer, preferably P⁺A doping layer with a doping concentration of 10¹⁹-10²¹atom/cm³。

Specifically, the tunneling layer 26 is SiO_xA layer having a thickness of 0.5-2nm, preferably 1-2 nm. The doped polysilicon layer 27 is P⁺Polycrystalline silicon layer or N⁺A polysilicon layer, preferably N⁺A polysilicon layer with a doping concentration of 5 × 10¹⁹-1×10²¹atom/cm³The thickness of the film is 20-300 nm. N is a radical of⁺The polysilicon layer is distributed in an interdigital shape.

Wherein the second electrode layer 31 is arranged at N⁺The region corresponding to the polysilicon layer, which penetrates through the second anti-reflective layer 29 and the second passivation layer 28 and N⁺The polysilicon layer contacts. The second electrode layer 31 is made of aluminum paste, which is low in cost and can ensure the efficiency of the battery.

Accordingly, the first electrode layer 30 is disposed so as not to cover N⁺A region of polycrystalline layer which is in contact with the silicon substrate 21 through the second antireflective layer 29, the second passivation layer 28.

In summary, the transparent conductive layer of the perovskite cell is in contact with the diffusion layer through a plurality of small holes through the first passivation layer of the silicon solar cell. The contact structure greatly improves the contact between the perovskite cell and the silicon solar cell and improves the conversion efficiency of the laminated cell. Meanwhile, the bottom layer battery in the embodiment adopts a P-type silicon wafer Topcon battery, and P is⁺Contact zoneThe aluminum electrode is adopted, so that the production cost of the bottom layer battery is effectively reduced, and the production cost of the laminated battery is reduced. Just the utility model provides a Topcon battery conversion efficiency is higher.

The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations are also considered as the protection scope of the present invention.

Claims (10)

1. A perovskite tandem solar cell comprises a silicon solar cell and a perovskite cell arranged above the silicon solar cell, and is characterized in that the perovskite cell comprises a transparent conducting layer, and a hole transport layer or an electron transport layer, a perovskite layer, an electron transport layer or a hole transport layer and a TCO layer which are sequentially arranged on the transparent conducting layer;

the silicon solar cell comprises a silicon substrate, and a diffusion layer and a first passivation layer which are arranged on the silicon substrate;

the transparent conducting layer is arranged on the first passivation layer, a plurality of small holes penetrating through the diffusion layer are formed in the first passivation layer, and the transparent conducting layer penetrates through the small holes to be in contact with the diffusion layer.

2. The perovskite tandem solar cell of claim 1, wherein the pores have a total cross-sectional area of: the area of the first passivation layer is (0.5-20): 100.

3. the perovskite tandem solar cell of claim 1, wherein the hole transport layer is made of PTAA, NiO_x、P₃HT、V₂O₅、MoO_x、PEDOT:PSS、WO_x、Sprio-OMeTAD、CuSCN、Cu₂O, CuI, Spiro-TTB, F4-TCNQ, F6-TCNNQ, m-MTDATA, and TAPC, with a thickness of 1-500 nm;

the forbidden band width of the perovskite layer is 1.5-2.5eV, and the thickness of the perovskite layer is 50-30000 nm;

the electron transport layer is made of SnO₂、TiO₂、ZnO、ZrO₂、C60、C70、PCBM、TiSnO_x、SnZnO_xIs 1-500nm thick.

4. The perovskite tandem solar cell according to claim 1, wherein the TCO layer is made of indium tin oxide with a thickness of 1-500 nm;

the transparent conducting layer is made of indium tin oxide, and the thickness of the transparent conducting layer is 1-500 nm.

5. The perovskite tandem solar cell of claim 1, wherein a first antireflection layer is disposed between the transparent conductive layer and the first passivation layer, the small hole extending through the first antireflection layer;

the first antireflection layer is made of SiO_x、SiN_x、AlO_x、SiC_x、SiC_xN_y、SiO_xN_yIs 1-100nm thick.

6. The perovskite tandem solar cell of claim 1, wherein the solar cell is a PERC back passivated cell, an HJT cell, an IBC cell, a Topcon cell, or a POLO cell.

7. The perovskite tandem solar cell of claim 1 or 6, wherein the solar cell is a Topcon cell and the silicon substrate is a p-type silicon wafer;

the diffusion layer is P⁺A doping layer with a doping concentration of 10¹⁹-10²¹atom/cm³。

8. The perovskite tandem solar cell of claim 7, wherein the P⁺The doping layer, the first passivation layer and the first antireflection layer are sequentially arranged on the front side of the silicon substrate;

the back of the silicon substrate is provided with a tunneling layer and N⁺Polysilicon layer, secondThe passivation layer, the second antireflection layer, the first electrode layer and the second electrode layer;

the first electrode layer is in contact with the silicon substrate through the second passivation layer and the second antireflection layer; the second electrode layer and the N⁺The polysilicon layer contacts.

9. The perovskite tandem solar cell of claim 8, wherein the first electrode layer is a silver electrode layer and the second electrode layer is an aluminum electrode layer.

10. The perovskite tandem solar cell of claim 8, wherein the tunneling layer has a thickness of 0.5 to 2nm,

said N is⁺The doping concentration of the polysilicon layer is 5 × 10¹⁹-1×10²¹atom/cm³The thickness of the film is 20-300 nm.

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