TW202137499A - 半導體元件及其製作方法 - Google Patents

半導體元件及其製作方法 Download PDF

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TW202137499A
TW202137499A TW109108803A TW109108803A TW202137499A TW 202137499 A TW202137499 A TW 202137499A TW 109108803 A TW109108803 A TW 109108803A TW 109108803 A TW109108803 A TW 109108803A TW 202137499 A TW202137499 A TW 202137499A
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gate structure
dielectric layer
source
drain region
pull
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TW109108803A
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沈彥宇
吳宗訓
邱亮維
梁世豪
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聯華電子股份有限公司
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Priority to US16/848,848 priority patent/US11552052B2/en
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Abstract

本發明揭露一種製作半導體元件的方法，其主要先形成第一金氧半導體電晶體於第一基底上，形成第一層間介電層並覆蓋第一金氧半導體電晶體，形成第二金氧半導體電晶體於第二基底上，形成第二層間介電層於第二金氧半導體電晶體上，然後於第二層間介電層覆蓋第二金氧半導體電晶體上之後將第二基底黏接至第一層間介電層上。

Description

半導體元件及其製作方法
本發明是關於一種製作半導體元件，尤指一種製作靜態隨機存取記憶體的方法。
在一嵌入式靜態隨機存取記憶體(embedded static random access memory, embedded SRAM)中，包含有邏輯電路(logic circuit)和與邏輯電路連接之靜態隨機存取記憶體。靜態隨機存取記憶體本身屬於一種揮發性(volatile)的記憶單元(memory cell)，亦即當供給靜態隨機存取記憶體之電力消失之後，所儲存之資料會同時抹除。靜態隨機存取記憶體儲存資料之方式是利用記憶單元內電晶體的導電狀態來達成，靜態隨機存取記憶體的設計是採用互耦合電晶體為基礎，沒有電容器放電的問題，不需要不斷充電以保持資料不流失，也就是不需作記憶體更新的動作，這與同屬揮發性記憶體的動態隨機存取記憶體(Dynamic Random Access Memory, DRAM)利用電容器帶電狀態儲存資料的方式並不相同。靜態隨機存取記憶體之存取速度相當快，因此有在電腦系統中當作快取記憶體(cache memory)等之應用。
一般而言，現行靜態隨機存取記憶體架構在讀取速度上雖相較於習知記憶體元件快速許多但仍佔據過大面積並造成空間浪費。因此如何改善現有靜態隨機存取記憶體架構即為現今一重要課題。
本發明一實施例揭露一種製作半導體元件的方法，其主要先形成第一金氧半導體電晶體於第一基底上，形成第一層間介電層並覆蓋第一金氧半導體電晶體，形成第二金氧半導體電晶體於第二基底上，形成第二層間介電層於第二金氧半導體電晶體上，然後於第二層間介電層覆蓋第二金氧半導體電晶體上之後將第二基底黏接至第一層間介電層上。
本發明另一實施例揭露一種半導體元件，其主要包含第一金氧半導體電晶體設於第一基底上、第一層間介電層設於第一金氧半導體電晶體上、第二基底設於第一層間介電層上以及第二金氧半導體電晶體設於第二基底上。
請參照第1圖與第2圖，第1圖為本發明靜態隨機存取記憶體中一組十電晶體靜態隨機存取記憶體(ten-transistor SRAM, 10T-SRAM)記憶單元之電路圖，第2圖為第1圖之靜態隨機存取記憶體之佈局圖。如第1圖與第2圖所示，本發明之靜態隨機存取記憶體較佳包含至少一組靜態隨機存取記憶體單元，其中每一靜態隨機存取記憶體單元包含一十電晶體靜態隨機存取記憶單元(10T-SRAM)。
在本實施例中，10T-SRAM記憶單元較佳包含一第一上拉元件(pull-up device)PU1、一第二上拉元件PU2、一第一下拉元件(pull-down device)PD1、一第二下拉元件PD2、一第一存取元件(pass gate device)PG1、一第二存取元件PG2、二電晶體所組成的讀取端下拉元件(read port pull down device)RPD以及二電晶體所組成的讀取端存取元件(read portion pass gate device)RPG，其中第一上拉元件PU1和第二上拉元件PU2、第一下拉元件PD1和第二下拉元件PD2構成栓鎖電路(latch)，使資料可以栓鎖在元件間的儲存節點(Storage Node)。另外第一上拉元件PU1和第二上拉元件PU2是作為主動負載之用，其亦可以一般之電阻來取代做為上拉元件，在此情況下即為四電晶體靜態隨機存取記憶體(four-transistor SRAM, 4T-SRAM)。另外在本實施例中，第一上拉元件PU1和第二上拉元件PU2各自之一源極區域電連接至一電壓源Vcc，第一下拉元件PD1和第二下拉元件PD2各自之一源極區域電連接至一電壓源Vss。
在一實施例中，10T-SRAM記憶單元的第一上拉元件PU1、第二上拉元件PU2是由P型金氧半導體(P-type metal oxide semiconductor, PMOS)電晶體所組成，而第一下拉元件PD1、第二下拉元件PD2和第一存取元件PG1、第二存取元件PG2、讀取端下拉元件RPD以及讀取端存取元件RPG則是由N型金氧半導體(N-type metal oxide semiconductor, NMOS)電晶體所組成，但本發明不限於此。其中，第一上拉元件PU1和第一下拉元件PD1一同構成一反相器(inverter)，且這兩者所構成的串接電路其兩端點分別耦接於一電壓源Vcc與一電壓源Vss；同樣地，第二上拉元件PU2與第二下拉元件PD2構成另一反相器，而這兩者所構成的串接電路其兩端點亦分別耦接於電壓源Vcc與電壓源Vss。
此外，第一存取元件PG1和第二存取元件PG2的閘極則分別耦接至一字元線(Word Line)WL，第一存取元件PG1的源極(Source)耦接至相對應之一位元線(Bit Line)BL，第二存取元件PG2的源極耦接至相對應之一位元線BLB，讀取端下拉元件RPD的其中一閘極藕接至第二上拉元件PU2與第二下拉元件PD2之間的節點，讀取端存取元件RPG的二閘極分別藕接至字元線R_WL，讀取端存取元件RPG的一源極藕接至位元線RBL且讀取端下拉元件RPD與讀取端存取元件RPG共同連接至一節點Rnode。
相較於習知6T-SRAM或8T-SRAM的記憶體架構，本實施例的10T-SRAM主要加入讀取端下拉元件RPD以及讀取端存取元件RPG等兩組元件使記憶體元件可同時進行寫入與讀取的動作。舉例來說，傳統6T-SRAM的架構下一般寫入一個訊號後需重新開啟電晶體再進行讀取，但在本實施例的10T-SRAM架構下藉由節點連接讀取端下拉元件RPD與習知6T-SRAM，在進行寫入動作時可同時經由節點將訊號傳遞出來，達到同時進行讀取與寫入的操作。
需注意的是雖然10T-SRAM架構在讀取速度上相較於習知6T-SRAM或8T-SRAM快速許多，但由於佔據面積過大因此在製作上容易造成空間浪費。為了改善此缺點本發明主要將讀取端下拉元件RPD以及讀取端存取元件RPG等兩組電晶體分別設置於不同層，例如第2圖所示下半部為讀取端下拉元件RPD而上半部則為讀取端存取元件RPG，藉此節省元件空間。
請繼續參照第3圖至第4圖，第3圖至第4圖為本發明一實施例之靜態隨機存取記憶體之結構示意圖，其中第3圖下半部為第2圖中沿著切線AA’之讀取端下拉元件RPD之結構示意圖，第3圖上半部為第2圖中沿著切線BB’之讀取端存取元件RPG之結構示意圖，而第4圖則為第2圖中沿著切線CC’由讀取端下拉元件RPD連接至讀取端存取元件RPG之結構示意圖。如第3圖至第4圖所示，首先提供一基底12，例如一由半導體材料所構成的基底12，其中半導體材料可選自由矽、鍺、矽鍺複合物、矽碳化物(silicon carbide)、砷化鎵(gallium arsenide)等所構成之群組。
然後於基底12上形成金氧半導體(metal-oxide semiconductor, MOS)電晶體14、16如讀取端下拉元件RPD等主動元件以及例如層間介電層(interlayer dielectric, ILD)28等介電層覆蓋於其上。更具體而言，基底12上可包含平面型或非平面型(如鰭狀結構電晶體)等電晶體元件，其中金氧半導體電晶體14、16可包含至少一閘極結構如閘極結構18、20設於基底12上、側壁子(圖未示)與源極/汲極區域22設於閘極結構18、20兩側的基底12內以及選擇性磊晶層與金屬矽化物設於源極/汲極區域22表面。
在本實施例中，各閘極結構18、20可包含一閘極介電層24以及一閘極電極26，其中閘極介電層24較佳包含氧化矽而閘極電極26則可包含多晶矽或金屬材料。本實施例的閘極結構18、20雖以多晶矽所構成的閘極電極26為例，但不侷限於此，依據本發明其他實施例又可依據金屬閘極置換(replacement metal gate, RMG)製程將多晶矽所構成的閘極結構18、20轉換為包含功函數金屬材料的金屬閘極，此變化型也屬本發明所涵蓋的範圍。而由於依據RMG製程將多晶矽閘極轉換為金屬閘極為本領域所熟知技藝，在此不另加贅述。
另外側壁子可包含單一側壁子或複合式側壁子，例如可細部包含一偏位側壁子(圖未示)以及一主側壁子(圖未示)，且側壁子可選自由氧化矽、氮化矽、氮氧化矽以及氮碳化矽所構成的群組，但不侷限於此。源極/汲極區域22與磊晶層可依據所置備電晶體的導電型式而包含不同摻質或不同材料。例如源極/汲極區域22可包含P型摻質或N型摻質，而磊晶層則可包含鍺化矽、碳化矽或磷化矽。
層間介電層28可設於基底12上並覆蓋各金氧半導體電晶體14、16，且層間介電層28中可設有複數個接觸插塞30、32電連接電晶體的源極/汲極區域22。然後進行一金屬內連線製程於層間介電層28上形成金屬間介電層34以及金屬內連線36、38、40鑲嵌於金屬間介電層34內並電連接接觸插塞30、32。在本實施例中接觸插塞30、32以及/或金屬內連線36、38、40均可依據單鑲嵌製程或雙鑲嵌製程鑲嵌於層間介電層28以及/或層間介電層28上的金屬間介電層34內，其中各接觸插塞30、32以及/或金屬內連線36、38、40可更細部包含一阻障層以及一金屬層，阻障層可選自由鈦(Ti)、氮化鈦(TiN)、鉭(Ta)以及氮化鉭(TaN)所構成的群組，而金屬層可選自由鎢(W)、銅(Cu)、鋁(Al)、鈦鋁合金(TiAl)、鈷鎢磷化物(cobalt tungsten phosphide，CoWP)等所構成的群組，但不侷限於此。由於平面型或非平面型電晶體與金屬內連線等相關製程均為本領域所熟知技藝，在此不另加贅述，另外在此階段即完成第2圖讀取端下拉元件RPD的製作。
接著可重複上述形成讀取端下拉元件RPD的步驟於金屬內連線40上形成讀取端存取元件RPG。舉例來說，可先進行一磊晶成長製程於下層所製備完成的讀取端下拉元件RPD上或更具體而言金屬內連線40表面形成另一基底42例如一由半導體材料所構成的基底42，其中半導體材料可選自由矽、鍺、矽鍺複合物、矽碳化物(silicon carbide)、砷化鎵(gallium arsenide)等所構成之群組。
然後於基底42上形成金氧半導體(metal-oxide semiconductor, MOS)電晶體44、46如讀取端存取元件RPG等主動元件以及層間介電層(interlayer dielectric, ILD)58覆蓋於其上。如前所述，基底42上可包含平面型或非平面型(如鰭狀結構電晶體)等電晶體元件，其中各金氧半導體電晶體44、46可包含至少一閘極結構如閘極結構48、50設於基底42上、側壁子與源極/汲極區域52設於閘極結構48、50兩側的基底42內以及選擇性磊晶層與金屬矽化物設於源極/汲極區域52表面。
如同讀取端下拉元件RPD的閘極結構18、20，讀取端存取元件RPG的閘極結構48、50可包含一閘極介電層54以及一閘極電極56，其中閘極介電層54較佳包含氧化矽而閘極電極56則可包含多晶矽或金屬材料。本實施例的閘極結構48、50雖以多晶矽所構成的閘極電極56為例，但不侷限於此，依據本發明其他實施例又可依據金屬閘極置換(replacement metal gate, RMG)製程將多晶矽所構成的閘極結構48、50轉換為包含功函數金屬材料的金屬閘極，此變化型也屬本發明所涵蓋的範圍。
如同前述實施例側壁子可包含單一側壁子或複合式側壁子，例如可細部包含一偏位側壁子(圖未示)以及一主側壁子(圖未示)，且側壁子可選自由氧化矽、氮化矽、氮氧化矽以及氮碳化矽所構成的群組，但不侷限於此。源極/汲極區域52與磊晶層可依據所置備電晶體的導電型式而包含不同摻質或不同材料。例如源極/汲極區域52可包含P型摻質或N型摻質，而磊晶層則可包含鍺化矽、碳化矽或磷化矽。
層間介電層58可設於基底12上並覆蓋各金氧半導體電晶體44、46，且層間介電層58中可設有接觸插塞或金屬內連線60、62、74電連接閘極結構48、50之間的源極/汲極區域52。需注意的是，第4圖中設於金屬內連線60旁的金屬內連線74較佳作為一橋梁同時電連接下層讀取端下拉元件RPD的源極/汲極區域22以及上層讀取端存取元件RPG的源極/汲極區域52。另外為了更簡潔顯示金屬內連線74及所連接的元件，第4圖中較佳省略設於金屬內連線74旁上層讀取端存取元件RPG的閘極結構50。
然後進行一金屬內連線製程形成金屬間介電層64以及接觸插塞或金屬內連線66、68、70鑲嵌於金屬間介電層64內並電連接閘極結構48、50兩側的源極/汲極區域52。在本實施例中金屬內連線60、62、66、68、70可依據單鑲嵌製程或雙鑲嵌製程鑲嵌於層間介電層58內以及/或金屬間介電層64內，其中各金屬內連線60、62、66、68、70可更細部包含一阻障層以及一金屬層，阻障層可選自由鈦(Ti)、氮化鈦(TiN)、鉭(Ta)以及氮化鉭(TaN)所構成的群組，而金屬層可選自由鎢(W)、銅(Cu)、鋁(Al)、鈦鋁合金(TiAl)、鈷鎢磷化物(cobalt tungsten phosphide，CoWP)等所構成的群組，但不侷限於此。在此階段即完成第2圖讀取端存取元件RPG的製作。
值得注意的是，除了上述實施例以磊晶成長方式直接於下層所製備完成的讀取端下拉元件RPD上形成由半導體材料所構成的基底42後再進行讀取端存取元件RPG的製作，依據本發明另一實施例又可於讀取端下拉元件RPD製作完成後於先在另一由半導體材料所構成的基底42或矽晶圓上進行讀取端存取元件RPG的製作，迨所有元件包括閘極結構、源極/汲極區域、層間介電層、金屬間介電層以及金屬內連線等元件製作完成後再利用利用接合(bonding)技術將設有讀取端存取元件RPG的基底42黏接至讀取端下拉元件RPD上或更具體而言金屬內連線40表面，此實施例也屬本發明所涵蓋的範圍。另外在本實施例中，若下層的讀取端下拉元件RPD與上層的讀取端存取元件RPG選擇經由接合方式進行連結，則兩者之間可依據製程或產品需求利用凸塊或矽貫通電極(through-silicon via, TSV)進行訊號傳遞，這些變化型均屬本發明所涵蓋的範圍。
綜上所述，由於現行10T-SRAM架構在讀取速度上雖較習知6T-SRAM或8T-SRAM快速許多但仍佔據過大面積造成空間浪費，因此本發明主要將10T-SRAM元件中的讀取端下拉元件RPD以及讀取端存取元件RPG等兩組電晶體元件分別設置於不同層，例如第2圖及第3圖所示下層為讀取端下拉元件RPD而上層則為讀取端存取元件RPG，藉此節省元件空間。依據前述實施例，本發明可先於第一基底12上進行下層讀取端下拉元件RPD的製作後利用磊晶成長製程於讀取端下拉元件RPD的最上層金屬內連線表面形成另一由半導體材料所構成的基底42，再於其上進行讀取端存取元件RPG的製作。除此之外，本發明另一實施例又可選擇先於第一基底12上進行讀取端下拉元件RPD的製作，然後於另一同樣由半導體材料所構成的第二基底42或矽晶圓上進行讀取端存取元件RPG的製作，迨兩者均完成後再利用接合技術將承載讀取端存取元件RPG的基底42附著於讀取端下拉元件RPD的最上層金屬內連線上，這兩種變化行均屬本發明所涵蓋的範圍。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
12:基底 14:金氧半導體電晶體 16:金氧半導體電晶體 18:閘極結構 20:閘極結構 22:源極/汲極區域 24:閘極介電層 26:閘極電極 28:層間介電層 30:接觸插塞 32:接觸插塞 34:金屬間介電層 36:金屬內連線 38:金屬內連線 40:金屬內連線 42:基底 44:金氧半導體電晶體 46:金氧半導體電晶體 48:閘極結構 50:閘極結構 52:源極/汲極區域 54:閘極介電層 56:閘極電極 58:層間介電層 60:金屬內連線 62:金屬內連線 64:金屬間介電層 66:金屬內連線 68:金屬內連線 70:金屬內連線 72:接觸插塞 74:金屬內連線
第1圖為本發明十電晶體靜態隨機存取記憶體(10T-SRAM)之電路圖。 第2圖為第1圖之靜態隨機存取記憶體之佈局圖。 第3圖為本發明一實施例之靜態隨機存取記憶體之結構示意圖。 第4圖為本發明一實施例之靜態隨機存取記憶體之結構示意圖。
12:基底
14:金氧半導體電晶體
16:金氧半導體電晶體
18:閘極結構
20:閘極結構
22:源極/汲極區域
24:閘極介電層
26:閘極電極
28:層間介電層
30:接觸插塞
32:接觸插塞
34:金屬間介電層
36:金屬內連線
38:金屬內連線
40:金屬內連線
42:基底
44:金氧半導體電晶體
46:金氧半導體電晶體
48:閘極結構
50:閘極結構
52:源極/汲極區域
54:閘極介電層
56:閘極電極
58:層間介電層
60:金屬內連線
62:金屬內連線
64:金屬間介電層
66:金屬內連線
68:金屬內連線
70:金屬內連線

Claims (20)

  1. 一種製作半導體元件的方法，其特徵在於，包含： 形成一第一金氧半導體電晶體於一第一基底上； 形成一第一層間介電層於該第一金氧半導體電晶體上；以及 形成一第二金氧半導體電晶體於該第一層間介電層上。
  2. 如申請專利範圍第1項所述之方法，另包含： 形成該第一金氧半導體電晶體以及一第三金氧半導體電晶體於該第一基底上；以及 形成該第一層間介電層於該第一金氧半導體電晶體及該第三金氧半導體電晶體上。
  3. 如申請專利範圍第2項所述之方法，另包含： 形成該第二金氧半導體電晶體以及一第四金氧半導體電晶體於一第二基底上；以及 形成一第二層間介電層於該第二金氧半導體電晶體及該第四金氧半導體電晶體上。
  4. 如申請專利範圍第3項所述之方法，另包含於形成該第二金氧半導體電晶體之前進行一磊晶成長製程將該第二基底形成於該第一層間介電層上。
  5. 如申請專利範圍第3項所述之方法，另包含於形成該第二層間介電層於該第二金氧半導體電晶體上之後將該第二基底接合至該第一層間介電層上。
  6. 如申請專利範圍第3項所述之方法，另包含： 形成一第一閘極結構以及一第二閘極結構於該第一基底上； 形成一第一源極/汲極區域於該第一閘極結構旁、一第二源極/汲極區域於該第一閘極結構以及該第二閘極結構之間以及一第三源極/汲極區域於該第二閘極結構旁； 形成該第一層間介電層於該第一閘極結構以及該第二閘極結構上； 形成一第一接觸插塞於該第一閘極結構旁； 形成一第一金屬間介電層於該第一層間介電層上；以及 形成一第一金屬內連線於該第一金屬間介電層內。
  7. 如申請專利範圍第6項所述之方法，另包含形成該第一金屬內連線於該第一閘極結構及該第二閘極結構之間。
  8. 如申請專利範圍第6項所述之方法，另包含： 形成一第三閘極結構以及一第四閘極結構於該第二基底上； 形成一第四源極/汲極區域於該第三閘極結構旁、一第五源極/汲極區域於該第三閘極結構以及該第四閘極結構之間以及一第六源極/汲極區域於該第四閘極結構旁；以極 形成該第二層間介電層於該第三閘極結構以及該第四閘極結構上。
  9. 如申請專利範圍第8項所述之方法，另包含： 形成一第二金屬內連線於該第三閘極結構以及該第四閘極結構之間並連接該第五源極/汲極區域； 形成一第二金屬間介電層於該第二層間介電層上； 形成一第三金屬內連線於該第三閘極結構旁並連接該第四源極/汲極區域；以及 形成一第四金屬內連線於該第四閘極結構旁並連接該第六源極/汲極區域。
  10. 如申請專利範圍第1項所述之方法，其中該半導體元件包含一靜態隨機存取記憶體，該靜態隨機存取記憶體包含： 一第一上拉元件； 一第二上拉元件； 一第一下拉元件； 一第二下拉元件； 一第一存取元件； 一第二存取元件； 一讀取端下拉元件；以及 一讀取端存取元件。
  11. 如申請專利範圍第10項所述之方法，其中該讀取端下拉元件包含該第一金氧半導體電晶體。
  12. 如申請專利範圍第10項所述之方法，其中該讀取端存取元件包含該第二金氧半導體電晶體。
  13. 一種半導體元件，其特徵在於，包含： 一第一金氧半導體電晶體設於一第一基底上； 一第一層間介電層設於該第一金氧半導體電晶體上； 一第二基底設於第一層間介電層上；以及 一第二金氧半導體電晶體設於該第二基底上。
  14. 如申請專利範圍第13項所述之半導體元件，另包含： 一第一閘極結構以及一第二閘極結構設於該第一基底上；以及 一第一源極/汲極區域設於該第一閘極結構旁、一第二源極/汲極區域設於該第一閘極結構以及該第二閘極結構之間以及一第三源極/汲極區域設於該第二閘極結構旁。
  15. 如申請專利範圍第14項所述之半導體元件，另包含： 一第一接觸插塞設於該第一閘極結構旁； 一第一金屬間介電層設於該第一層間介電層上；以及 一第一金屬內連線設於該第一金屬間介電層內。
  16. 如申請專利範圍第15項所述之半導體元件，另包含： 一第三閘極結構以及一第四閘極結構設於該第二基底上；以及 一第四源極/汲極區域設於該第三閘極結構旁、一第五源極/汲極區域設於該第三閘極結構以及該第四閘極結構之間以及一第六源極/汲極區域設於該第四閘極結構旁。
  17. 如申請專利範圍第16項所述之半導體元件，另包含： 一第二金屬內連線設於該第三閘極結構以及該第四閘極結構之間並連接該第五源極/汲極區域； 一第二金屬間介電層設於該第二層間介電層上； 一第三金屬內連線設於該第三閘極結構旁並連接該第四源極/汲極區域；以及 一第四金屬內連線設於該第四閘極結構旁並連接該第六源極/汲極區域。
  18. 如申請專利範圍第13項所述之半導體元件，其中該半導體元件包含一靜態隨機存取記憶體，該靜態隨機存取記憶體包含： 一第一上拉元件； 一第二上拉元件； 一第一下拉元件； 一第二下拉元件； 一第一存取元件； 一第二存取元件； 一讀取端下拉元件；以及 一讀取端存取元件。
  19. 如申請專利範圍第18項所述之半導體元件，其中該讀取端下拉元件包含該第一金氧半導體電晶體。
  20. 如申請專利範圍第18項所述之半導體元件，其中該讀取端存取元件包含該第二金氧半導體電晶體。
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Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174225A (ja) * 1998-12-01 2000-06-23 Hitachi Ltd 半導体集積回路装置およびその製造方法
TW442837B (en) * 1998-12-03 2001-06-23 Infineon Technologies Ag Integrated circuit-arrangement and its production method
US6635552B1 (en) * 2000-06-12 2003-10-21 Micron Technology, Inc. Methods of forming semiconductor constructions
US6887753B2 (en) * 2001-02-28 2005-05-03 Micron Technology, Inc. Methods of forming semiconductor circuitry, and semiconductor circuit constructions
US8144540B2 (en) * 2009-04-14 2012-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Two-port 8T SRAM design
US8399935B2 (en) * 2009-09-18 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded SRAM memory for low power applications
US8942030B2 (en) * 2010-06-25 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for SRAM cell circuit
US8625334B2 (en) * 2011-12-16 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell
JP6014354B2 (ja) * 2012-04-25 2016-10-25 株式会社日立製作所 半導体装置の製造方法
US8629524B2 (en) * 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US9406711B2 (en) * 2012-06-15 2016-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for backside illuminated image sensors
US8860229B1 (en) * 2013-07-16 2014-10-14 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid bonding with through substrate via (TSV)
US9793243B2 (en) * 2014-08-13 2017-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Buffer layer(s) on a stacked structure having a via
CN105355232B (zh) * 2014-08-19 2018-10-23 中芯国际集成电路制造(上海)有限公司 静态随机存储器
FR3028095B1 (fr) * 2014-11-04 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif electronique de puissance a cellule de commutation 3d verticale
US9607685B2 (en) * 2015-07-30 2017-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Memory array with strap cells
WO2017052594A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Semiconductor device wafer bonding integration techniques
US10128253B2 (en) * 2016-01-29 2018-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Two-port SRAM structure
TWI726869B (zh) * 2016-02-24 2021-05-11 聯華電子股份有限公司 靜態隨機存取記憶體的佈局結構及其製作方法
US9761302B1 (en) * 2016-04-06 2017-09-12 United Microelectronics Corp. Static random access memory cell and manufacturing method thereof
US10515969B2 (en) * 2016-11-17 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
TWI698871B (zh) * 2017-01-03 2020-07-11 聯華電子股份有限公司 六電晶體靜態隨機存取記憶體單元及其操作方法
US20190296081A1 (en) * 2018-03-23 2019-09-26 Intel Corporation Selector-based electronic devices, inverters, memory devices, and computing devices
US10672775B2 (en) * 2018-05-25 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having strap cell
TWI771484B (zh) * 2018-09-07 2022-07-21 聯華電子股份有限公司 靜態隨機存取記憶體的佈局圖案
US11659722B2 (en) * 2018-12-19 2023-05-23 Intel Corporation Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit

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