TW202136065A - 狹長型噴墨頭晶片之製造方法 - Google Patents
狹長型噴墨頭晶片之製造方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 12
- 230000003068 static effect Effects 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 20
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- 230000008569 process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
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- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04511—Control methods or devices therefor, e.g. driver circuits, control circuits for electrostatic discharge protection
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- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
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- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/13—Heads having an integrated circuit
Abstract
一種狹長型噴墨頭晶片之製造方法,包含以下步驟:S1.提供矽基板;S2.使用第一類型光罩於至少二高精度區佈設主動元件層;S3.使用第二類型光罩於主動元件層上佈設被動元件層;以及S4.對矽基板進行切割,以產生複數個狹長型噴墨頭晶片。
Description
本案係關於一種噴墨頭晶片之製造方法,尤指一種使用不同倍率之光罩來製造狹長型噴墨頭晶片之製造方法。
隨著科技的日新月異,噴墨頭的尺寸以及形狀也隨著不同客戶的需求(例如,更快的列印速度)而改變。然而,噴墨頭的尺寸及形狀的變化會受到製程中光罩尺寸的限制,並且增加生產成本。
請參閱第1圖,現有的噴墨頭晶片9具有複數個電極墊片91、複數個靜電防護單元92、複數個加熱器93、複數個加熱器開關94、複數個編碼器95、複數個編碼器開關96及複數個放電保護單元97。複數個電極墊片91相鄰設置於噴墨頭晶片9的一相對兩側。複數個靜電防護單元92分別緊鄰電極墊片91而設置。複數個加熱器93相鄰且對稱設置於噴墨頭晶片9的另一相對兩側。複數個加熱器開關94分別緊鄰加熱器93設置。複數個編碼器95相鄰設置於噴墨頭晶片9之一處。複數個編碼器開關96分別緊鄰編碼器95設置。複數個放電保護單元97相鄰設置於噴墨頭晶片9之另一處。
請參閱第1圖以及第2圖,欲驅動加熱器93時,舉例來說,對電極墊片91通以適當電壓可開啟加熱器開關94,同時再對電極墊片91通以適當電壓即可驅動所屬加熱器93。
然而,現有的噴墨頭晶片9中,由於靜電防護單元92需緊鄰電極墊片91而設置,以及加熱器開關94需緊鄰加熱器93而設置,在配置上的靈活度較低。再者,受到光罩尺寸限制,也難以因應客製化需求,製成狹長型的工業用噴墨頭。
本案之主要目的在於提供一種噴墨頭晶片之製造方法,包含互補式金屬氧化物半導體(CMOS)或N型金屬氧化物半導體(NMOS)等電路,其不受光罩尺寸限制,只需改變部分光罩即可形成各種長度及形狀之噴墨頭,活用性高且生產成本低。
為達上述目的,本案之一實施態樣為提供一種狹長型噴墨頭晶片之製造方法,包含以下步驟:
S1. 提供一矽基板,該矽基板上具有複數個噴墨晶片區域,該些噴墨晶片區域皆呈狹長型,且皆分別具有至少二高精度區;
S2. 使用一第一類型光罩分別於該至少第二高精度區上佈設一主動元件層,該主動元件層具有複數個靜電防護單元、複數個編碼器開關、複數個放電保護單元以及複數個加熱器開關,該至少二高精度區的該些靜電防護單元、該些編碼器開關、該些放電保護單元以及該些加熱器開關其數量及相對位置皆相同;
S3. 使用一第二類型光罩於該些主動元件層上佈設一被動元件層,該被動元件層具有複數個電極墊片、複數個加熱器、複數個編碼器以及複數個電路走線;以及
S4. 以該些噴墨晶片區域為基準對該矽基板切割,以產生複數個狹長型噴墨頭晶片。
體現本案特徵與優點的實施態樣將在後段的說明中詳細敘述。應理解的是本案能夠在不同的態樣上具有各種的變化,其皆不脫離本案的範圍,且其中的說明及圖示在本質上當作說明之用,而非用以限制本案。
請參閱第3圖所示,狹長型噴墨頭晶片10之製作方法包含以下步驟:
S1. 提供一矽基板1,矽基板1上具有複數個噴墨晶片區域1A,噴墨晶片區域1A皆呈狹長型,且皆分別具有至少二高精度區;
S2. 使用一第一類型光罩分別於至少二高精度區上佈設一主動元件層12,該主動元件12層具有複數個靜電防護單元121、複數個編碼器開關122、複數個放電保護單元123以及複數個加熱器開關124,至少二高精度區的該些靜電防護單元121、該些編碼器開關122、該些放電保護單元123以及該些加熱器開關124其數量及相對位置皆相同;
S3. 使用一第二類型光罩於主動元件層12上佈設一被動元件層13,被動元件層13具有複數個加熱器131、複數個電極墊片132、複數個電路走線133以及複數個編碼器134;以及
S4. 以噴墨晶片區域1A為基準對該矽基板1切割,以產生複數個狹長型噴墨頭晶片10。
請參閱第3圖及第4圖,於步驟S1中,提供矽基板1,矽基板1可為一矽晶圓,於本實施例中,為6吋矽晶圓,但不以此為限;矽基板1上具有複數個噴墨晶片區域1A,噴墨晶片區域1A皆為狹長型且彼此相鄰,而如第5圖所示,噴墨晶片區域1A具有一第一長邊111、一第二長邊112、一第一短邊113及一第二短邊114,第一長邊111、第二長邊112相互對應,第一短邊113與第二短邊114相互對應且分別與第一長邊111、第二長邊112相連;其中,每一噴墨晶片區域1A皆分別具有至少二高精度區,於本實施例中,以第一高精度區1a及第二高精度區1b為例。
步驟S2請參考第5圖及第6圖所示,使用第一類型光罩於矽基板1上的每一噴墨晶片區域1A的第一高精度區1a及第二高精度區1b佈設主動元件層12,主動元件層具有靜電防護單元121、編碼器開關122、放電保護單元123以及複數個加熱器開關124,靜電防護單元121鄰近於第一長邊111且沿第一長邊111排列設置,編碼器開關122同樣鄰近於第一長邊111及沿第一長邊111排列設置,放電保護單元123亦鄰近於第一長邊111及沿第一長邊111排列設置。於本實施例中,靜電防護單元121、編碼器開關122、放電保護單元123沿第一長邊111排成一行,但不以此為限。加熱器開關124位於噴墨晶片區域1A的中間處,並與靜電防護單元121、編碼器開關122、放電保護單元123併排排列,其中,第一高精度區1a及第二高精度區1b內主動元件層12的靜電防護單元121、編碼器開關122、放電保護單元123、複數個加熱器開關124的數量及其排列相對位置都相同。
值得注意的是,於本案實施態樣中,放電保護單元123為一下拉電阻保護裝置(Pull Down, RPD),但不以此為限;於本案中,靜電防護單元121、編碼器開關122、放電保護單元123、加熱器開關124分別為一N型金屬氧化物半導體(NMOS)元件,但不以此為限。於其他實施態樣中,靜電防護單元121、編碼器開關122、放電保護單元123、加熱器開關124可分別為一互補式金屬氧化物半導體(CMOS)元件或一雙極性(Bipolar)元件,而主動元件層12的元件對於精確度的要求較高,因此第一類型光罩為一1/5倍縮步進光罩,使用1/5倍縮步進光罩逐一對第一高精度區1a以及第二高精度區1b進行曝光,來保證主動元件層12的精確度。
此外,主動元件層12主要由多層材料依序堆疊所形成,故於製程中需要使用複數個第一類型光罩,以光罩a1、a2、a3、a4、a5舉例,依序使用光罩a1~a5分別對各層做曝光的動作,來完成多層材料堆疊,值得注意是,噴墨頭晶片1包含至少二高精度區,如第一高精度區1a及第二高精度區1b,由於第一高精度區1a及第二高精度區1b內的元件數量及其排列位置都相同,故在第一高精度區1a及第二高精度區1b做曝光動作時,可使用同組光罩(如光罩a1~a5)來做曝光動作,堆疊第一高精度區1a及第二高精度區1b的主動元件層12,本案將高精度區(如第一高精度區1a、第二高精度區1b)內的元件的排列皆相同的安排,可有效減少製程時間與成本,反之,若第一高精度區1a與的第二高精度區1b內的元件數量與排列不同時,此時第一高精度區1a所使用光罩可能為光罩a1~a5,第二高精度區1b所使用之光罩可能為b1~b5,會產生必須要先使用光罩a1~a5完成第一高精度區1a,再使用光罩b1~b5完成第二高精度區1b的情況,不僅需求多一倍的光罩,也增加曝光製程時間。
請同時參閱第6圖及第7圖,為了詳細說明本步驟,先前步驟完成之元件於第7圖中皆以虛線表示之,步驟S3,使用第二類型光罩於主動元件層12上佈設被動元件層13,被動元件層13具有加熱器131、電極墊片132、電路走線133及編碼器134;加熱器131沿矽基板11的第二長邊112排列設置,且呈行排列,電極墊片132沿第一短邊113及第二短邊114排列設置,於本實施例中,部分電極墊片132沿第一短邊113成列排列,部分電極墊片132沿第二短邊114成列排列,但不以此為限,編碼器134沿第一長邊111排列設置且分別鄰接其對應之編碼器開關122,電路走線133則用於電連接靜電防護單元121、編碼器開關122、放電保護單元123、加熱器開關124、加熱器131、電極墊片132,其中,電路走線133分別設置於不同金屬層,如此,可減少繁複的電路跳線動作,被動元件層13材料可為金、鋁、鉭之其中之一或其組合,不以此為限。
再參考第3圖及第8圖,步驟S4,以每一噴墨晶片區域1A的邊界為基準對矽基板1進行切割,切割後,每一噴墨晶片區域1A皆可形成一狹長型噴墨頭晶片10(如第8圖),以產生複數個狹長型噴墨頭晶片10。
上述被動元件層13可為加熱器131、電極墊片132、電路走線133及編碼器134,其精確度要求較低,故第二類型光罩為一1倍對準光罩,直接對整個矽基板1(如第4圖)進行曝光步驟。
此外,以第一高精度區1a為例,第一高精度區1a內的元件排列可為部分放電保護單元123、部分靜電防護單元121、編碼器開關122、部分靜電防護單元121、部分放電保護單元123等順序沿第一長邊111依序成行排列,而加熱器開關124則與其併排排列,但不以此為限,其中,各高精度區內的元件位置排列與數量皆相同,故當第一高精度區1a內的元件依上列方式排列時,其第二高精度區1b內的主動元件層12的元件同樣依照部分放電保護單元123、部分靜電防護單元121、編碼器開關122、部分靜電防護單元121、部分放電保護單元123等順序沿第一長邊111依序成行排列的方式設置,加熱器開關124則與其併排排列。
綜上所述,本案於需要高精度的主動元件層的製程中,透過步進光罩逐步曝光,於精度需求較低之被動元件層的製程中,採用一般光罩一次曝光顯影,此外,於高精度區內的主動元件層其元件數量位置皆固定,使得前段製程中可使用相同圖案的光罩,即可組成任意尺寸等級的噴墨頭晶片,在不同需求下,如1.5吋、2吋狹長型噴墨頭晶片,也可組成1吋之三噴墨頭晶片或是多色寬幅噴墨頭晶片,都無須再重新開設前段製程的光罩,且在不同的高精度區佈設主動元件層時,亦無更換光罩之必要,僅需調整被動元件層的光罩,調整被動元件層的加熱器、電極墊片、電路走線的位置及佈設即可完成,無須改動主動元件層的光罩,既省時又節省成本,極具產業利用性及進步性。
本案得由熟習此技術之人士任施匠思而為諸般修飾,然皆不脫如附申請專利範圍所欲保護者。
10:狹長型噴墨頭
1:矽基板
10:狹長型噴墨頭晶片
1A:噴墨晶片區域
1a:第一高精度區
1b:第二高精度區
111:第一長邊
112:第二長邊
113:第一短邊
114:第二短邊
12:主動元件層
121:靜電防護單元
122:編碼器開關
123:放電保護單元
124:加熱器開關
13:被動元件層
131:加熱器
132:電極墊片
133:電路走線
134:編碼器
9:噴墨頭晶片
91:電極墊片
92:靜電防護單元
93:加熱器
94:加熱器開關
95:編碼器
96:編碼器開關
97:放電保護單元
第1圖為傳統噴墨頭晶片之布局示意圖。
第2圖為傳統噴墨頭晶片之部分電路示意圖。
第3圖為本案狹長型噴墨頭晶片之製造步驟示意圖。
第4圖為本案狹長型噴墨頭晶片之於矽基板上示意圖。
第5圖為本案狹長型噴墨頭晶片之主動元件層其元件示意圖。
第6圖為本案狹長型噴墨頭晶片之剖面示意圖。
第7圖為本案狹長型噴墨頭晶片之被動元件層其元件示意圖。
第8圖為本案狹長型噴墨頭晶片之示意圖。
S1~S4:狹長型噴墨頭晶片之製造方法之步驟
Claims (7)
- 一種狹長型噴墨頭晶片之製造方法,包含: S1. 提供一矽基板,該矽基板上具有複數個噴墨晶片區域,該些噴墨晶片區域皆呈狹長型,且皆分別具有至少二高精度區; S2. 使用一第一類型光罩分別於該至少二高精度區上佈設一主動元件層,該主動元件層具有複數個靜電防護單元、複數個編碼器開關、複數個放電保護單元以及複數個加熱器開關,該至少二高精度區的該些靜電防護單元、該些編碼器開關、該些放電保護單元以及該些加熱器開關其數量及相對位置皆相同; S3. 使用一第二類型光罩於該些主動元件層上佈設一被動元件層,該被動元件層具有複數個電極墊片、複數個加熱器、複數個編碼器以及複數個電路走線;以及 S4. 以該些噴墨晶片區域為基準對該矽基板切割,以產生複數個狹長型噴墨頭晶片。
- 如請求項1所述之狹長型噴墨頭晶片之製造方法,其中該第一類型光罩為一1/5倍縮步進光罩。
- 如請求項2所述之狹長型噴墨頭晶片之製造方法,其中該第二類型光罩為一1倍對準光罩。
- 如請求項1所述之狹長型噴墨頭晶片之製造方法,其中該矽基板為一矽晶圓。
- 如請求項4所述之狹長型噴墨頭晶片之製造方法,其中該矽晶圓為一6吋矽晶圓。
- 如請求項1所述之狹長型噴墨頭晶片之製造方法,其中該些靜電防護單元、該些編碼器開關、該些放電保護單元以及該些加熱器開關分別為一N型金屬氧化物半導體(NMOS)元件。
- 如請求項1所述之狹長型噴墨頭晶片之製造方法,其中該被動元件層之材料為金、鋁、鉭之其中之一或其組合。
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