TW202131030A - 影像感測器結構 - Google Patents
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Abstract
一種影像感測器結構,其具有相鄰之可見光感測區及紅外光感測區,且其包含半導體基板、多個光感測元件、紅外光吸收增強件、彩色濾光器和紅外光通過濾光器。半導體基板具有相對之前側及背側。此些光感測元件設置在半導體基板之前側。紅外光吸收增強件設置在該半導體基板之背側且僅在紅外光感測區中。彩色濾光器位於半導體基板之背側上且在可見光感測區中。紅外光通過濾光器位於紅外光吸收增強件上。
Description
本發明是有關於一種影像感測器,且特別是指一種具有紅外光感測功能的影像感測器結構。
影像感測器已廣泛用於各種成像應用及產品上,例如智慧型手機、數位相機、掃描器等。進一步地,具有紅外光感測功能的影像感測器可偵測紅外光和可見光,以得到更多的資訊。具有紅外光偵測功能的影像感測器可應用在例如虹膜辨識、物件偵測和類似的安全應用上。
本發明之一方面是在於提供一種影像感測器結構,其具有相鄰之可見光感測區及紅外光感測區,且其包含半導體基板、多個光感測元件、紅外光吸收增強件、彩色濾光器和紅外光通過濾光器。半導體基板具有相對之前側及背側。此些光感測元件設置在半導體基板之前側。紅外光吸收增強件設置在該半導體基板之背側且僅在紅外光感測區中。彩色濾光器位於半導體基板之背側上且在可見光感測區中。紅外光通過濾光器位於紅外光吸收增強件上。
依據本發明的一些實施例,上述影像感測器結構更包含紅外光陷波濾光器,其位於上述半導體基板之背側上且在上述可見光感測區中。
依據本發明的一些實施例,上述紅外光陷波濾光器設於上述半導體基板與上述彩色濾光器之間。
依據本發明的一些實施例,上述影像感測器結構更包含多個微透鏡,其分別位於上述彩色濾光器和上述紅外光通過濾光器上。
依據本發明的一些實施例,上述紅外光通過濾光器具有700奈米至1100奈米之光通過波段。
依據本發明的一些實施例,上述紅外光通過濾光器之光通過波段的中心波長約為850奈米。
依據本發明的一些實施例,上述紅外光通過濾光器之光通過波段的中心波長約為940奈米。
依據本發明的一些實施例,上述影像感測器結構更包位於上述半導體基板之前側上的元件層和位於元件層上的承載基板。
依據本發明的一些實施例,上述紅外光吸收增強件包含二氧化矽。
以下仔細討論本發明的實施例。然而,可以理解的是,實施例提供許多可應用的概念,其可實施於各式各樣的特定內容中。所討論、揭示之實施例僅供說明,並非用以限定本發明之範圍。
在本文中所使用的用語僅是為了描述特定實施例,非用以限制申請專利範圍。除非另有限制,否則單數形式的「一」或「該」用語也可用來表示複數形式。此外,空間相對性用語的使用是為了說明元件在使用或操作時的不同方位,而不只限於圖式所繪示的方向。元件也可以其他方式定向(旋轉90度或在其他方向),而在此使用的空間相對性描述也可以相同方式解讀。
為了簡化和明確說明,本文可能會在各種實施例中重複使用元件符號和/或字母,但這並不表示所討論的各種實施例及/或配置之間有因果關係。
請參照圖1,圖1為依據本發明一些實施例之影像感測器結構100的剖視圖。影像感測器結構100可應用至例如背照式(back-side illuminated;BSI)互補金屬氧化物半導體(complementary metal oxide semiconductor;CMOS)影像感測器、電荷耦合元件(charge coupled device;CCD)影像感測器、或其他合適的影像感測器。影像感測器結構100包含多個排列為矩陣的感測像素。每一感測像素具有用以感測可見光的可見光感測區100C和用以感測紅外光的紅外光感測區100IR。可見光感測區100C包含用以感測位於紅光波段之入射光的紅光感測區100R、用以感測位於綠光波段之入射光的綠光感測區100G和用以感測位於藍光波段之入射光的藍光感測區100B。應注意的是,為便利說明,圖1僅繪示單一感測像素,而所屬技術領域中具有通常知識者可直接得知,其他感測像素的剖視圖可實質相同或相似於圖1所示之內容。此外,紅光感測區100R、綠光感測區100G、藍光感測區100B和紅外光感測區100IR在俯視上可以條狀形式排列,但本發明不限於此。
影像感測器結構100包含半導體基板102、光感測元件104A-104D、元件層106、承載基板108、紅外光吸收增強件110、紅外光陷波濾光器112、彩色濾光器114、紅外光通過濾光器116 和微透鏡118。如圖1所示,光感測元件104A-104D設置於半導體基板102的前側102A,其用以將穿透半導體基板102之背側102B的入射光轉換為電子。光感測元件104A-104C分別配置在紅光感測區100R、綠光感測區100G和藍光感測區100B中,以分別感測紅光、綠光和藍光,而光感測元件104D配置在紅外光感測區100IR中,以感測紅外光。光感測元件104A-104D可以是例如光二極體、釘扎光二極體(pinned photodiode)、光閘(photogate)、光電晶體(photo transistor)和/或相似者。
元件層106設置在半導體基板102的前側102A上。元件層106可包含介電層和用以耦合電子構件的導電層,例如電晶體106A、導線106B、介層窗106C和/或相似者。電晶體106A可配置為收集由光感測元件104A-104D產生的電子,且將收集的電子轉換為電壓訊號,且導線106B和介層窗106C可配置為傳輸電子至例如影像處理晶片。應注意的是,電晶體106A、導線106B和介層窗106C的配置僅為示例。元件層106中電子構件的實際設置和配置可依據設計需求決定,其不以圖1繪示的內容為限。
承載基板108接合至元件層106。在一些實施例中,承載基板108可藉由例如直接接合製程、光學融熔接合(fusion bonding)製程或其他合適的接合製程接合至元件層106。
紅外光吸收增強件110設置在半導體基板102的背側102B且位於紅外光感測區100IR中,以增強入射至半導體基板102且被光感測元件104D吸收之紅外光的量。紅外光吸收增強件110可以是凸形陣列結構、梯形陣列結構、角錐陣列結構、倒角錐陣列結構、脊形結構或任何其他可增強入射至半導體基板102之紅外光的量的結構。在另一些實施例中,多個紅外光吸收增強件110設置在半導體基板102的背側102B且位於紅外光感測區100IR中。
紅外光陷波濾光器112設置在半導體基板102的背側102B上且位於可見光感測區100C中。在一些實施例中,紅外光陷波濾光器112為近紅外光截止濾光器,其可阻隔波長約為700奈米至1100奈米的入射光。
彩色濾光器114設置在紅外光陷波濾光器112上 且位於可見光感測區100C中。彩色濾光器114具有紅光濾光部114R、綠光濾光部114G和藍光濾光部114B,其分別用以使紅光、綠光和藍光通過。
紅外光通過濾光器116設置在紅外光吸收增強件110和半導體基板102的背側102B上且在紅外光感測區100IR中,以使紅外光通過。在一些實施例中,紅外光通過濾光器116具有約為700奈米至1100奈米的光通過波段,以使近紅外光通過。在若干實施例中,依據不同的設計需求,紅外光通過濾光器116之光通過波段的中心波長約為850奈米或940奈米。
微透鏡118設置在彩色濾光器114和紅外光通過濾光器116上,且分別位於紅光感測區100R、綠光感測區100G、藍光感測區100B和紅外光感測區100IR中。如圖1所示,每一微透鏡118在其光接收側具有用以聚焦入射光的凸形。在一些實施例中,在彩色濾光器114、紅外光通過濾光器116與微透鏡118之間可另設置間隔層(圖未繪示),以將微透鏡118與彩色濾光器114和紅外光通過濾光器116相隔開。
請參照圖2A-2G,其繪示依據本發明一些實施例之形成影像感測器結構100的方法之各中間階段的剖面示意圖。在圖2A中,提供半導體基板102。提供的半導體基板102可包含例如矽和/或鍺之半導體材料。其他適於形成影像感測器結構100的材料可包含在半導體基板102中。
在圖2B中,光感測元件104A-104D 形成在半導體基板102的前側102A,元件層106形成在光感測元件104A-104D的上方且在半導體基板102的前側102A,而接著承載基板108接合至元件層106。
具體而言,半導體基板102具有分別對應影像感測器結構100的紅光感測區100R、綠光感測區100G、藍光感測區100B和紅外光感測區100IR的部分,且光感測元件104A-104D分別設置在紅光感測區100R、綠光感測區100G、藍光感測區100B和紅外光感測區100IR中。紅光感測區100R、綠光感測區100G和藍光感測區100B的組合又稱為可見光感測區100C。光感測元件104A-104D可藉由在半導體基板102上進行蝕刻程序且接著進行擴散或佈植製程而形成,但本發明不限於此。形成光感測元件104A-104D的製程可依據設計需求而決定,例如光感測元件104A-104D的種類。
形成的元件層106可包含分別耦接光感測元件104A-104D的電晶體106A,以收集由光感測元件104A-104D產生的電子,且將收集的電子轉換為電壓訊號。形成的元件層106也可包含用以傳輸電子至例如影像處理晶片的導線106B和介層窗106C。承載基板108可藉由例如直接接合製程、光學融熔接合製程或其他合適的接合製程接合至元件層106。
在圖2C中,薄化半導體基板102。在一些實施例中,在承載基板108接合至元件層106後,上下翻轉圖2C所示之結構,且接著在原半導體基板102的背側(相對於前側102A)進行合適的蝕刻製程,以薄化半導體基板102。
在圖2D中,紅外光吸收增強件110在半導體基板102的背側102B上且在紅外光感測區100IR中形成,以增強入射至半導體基板102 且被光感測元件104D吸收之紅外光的量。在一些實施例中,可在半導體基板102的背側102B上和紅外光感測區100IR中進行圖案化製程以形成一或多個凹槽,且接著可進行沉積製程,將材料填入至凹槽,以形成紅外光吸收增強件110。形成紅外光吸收增強件110的材料可包含例如二氧化矽、氧化鉿、矽鍺、上述組合或相似者。
在圖2E中,在半導體基板102的背側102B上且在可見光感測區100C中形成用於阻隔特定紅外光波帶的光之紅外光陷波濾光器112。紅外光陷波濾光器112可以是近紅外光截止濾光器,其藉由塗佈製程或其他合適製程形成,且包含可蝕刻材料。
在圖2F中,彩色濾光器114在紅外光陷波濾光器112上且在可見光感測區100C中形成,且紅外光通過濾光器116在紅外光吸收增強件110上且紅外光感測區100IR中形成。
形成的彩色濾光器114和紅外光陷波濾光器112用以使波長在可見光波段的光通過,且阻隔波長在可見光波段以外的光。彩色濾光器114的可見光波段可包含紅光波段、綠光波段和藍光波段。彩色濾光器114具有紅光濾光部114R、綠光濾光部114G和藍光濾光部114B,其分別使紅光、綠光和藍光通過。形成的彩色濾光器114可由例如顏料基底聚合物、染料基底聚合物、樹脂和/或其他合適材料,且可藉由例如塗佈製程或其他合適製程而形成。
形成的紅外光通過濾光器116用以使波長在近紅外光波段的光通過,且阻隔波長在近紅外光波段以外的光。紅外光通過濾光器116可包含使紅外光通過且阻隔可見光的聚合物,且可藉由利用微影圖案化製程或其他合適製程而形成。在一些實施例中,彩色濾光器114和紅外光通過濾光器116的頂部平面可共面。
在圖2G中,微透鏡118在彩色濾光器114和紅外光通過濾光器116上形成,且分別位於紅光感測區100R、綠光感測區100G、藍光感測區100B和紅外光感測區100IR中。形成的微透鏡118可在其光接收側具有用以提升光吸收效率的凸形。微透鏡118可由玻璃、丙烯酸聚合物或其他具有高穿透率的合適材料,且可藉由旋塗製程、沉積製程和/或其他合適製程而形成。
圖3示出在不具有濾光器下,圖1之影像感測器結構100在紅外光感測區100IR中入射光波長與量子效率的對應關係(曲線310)與傳統在半導體基板的光接收側不具紅外光吸收增強件之影像感測器結構在紅外光感測區中入射光波長與量子效率的對應關係(曲線320)。如圖3所示,相較於傳統影像感測器結構,本發明之影像感測器結構100在波帶約為700-1100奈米之近紅外光波帶的量子效率顯著提升。特別地, 影像感測器結構100在波長為850奈米或940奈米的量子效率提升大約2-3倍。
圖4A示出具有中心截止波長為850奈米之紅外光陷波濾光器112但不具有紅外光吸收增強件110的影像感測器結構100在紅色像素(即紅光感測區100R)、綠色像素(即綠光感測區100G)、藍色像素(即藍光感測區100B)和紅外光像素(即紅外光感測區100IR)中入射光波長與量子效率的對應關係,而圖4B示出具有中心截止波長為850奈米之紅外光陷波濾光器112及紅外光吸收增強件110的影像感測器結構100在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係。藉由比較圖4A和圖4B所示之圖表可知,具有之紅外光吸收增強件110的影像感測器結構100,在紅外光像素中對應800-900奈米之波帶的量子效率顯著提升,且在紅色像素、綠色像素和藍色像素中對應可見光波帶(即400-700奈米)的量子效率大致維持不變。雖然紅外光對紅色、綠色和藍色像素的串音(crosstalk)亦增強,但此串音可藉由影像處理而消除。
此外,圖5A示出不具有中心截止波長為850奈米之紅外光陷波濾光器112及紅外光吸收增強件110的影像感測器結構100在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係,而圖5B示出不具有中心截止波長為850奈米之紅外光陷波濾光器112但具有紅外光吸收增強件110的影像感測器結構100在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係。相似於具有紅外光陷波濾光器112的影像感測器結構100,藉由比較圖5A和圖5B的graphs可知,具有紅外光吸收增強件110的影像感測器結構100,在紅外光感測區100IR中對應800-900奈米之波帶的量子效率顯著提升,且在紅光感測區100R、綠光感測區100G和藍光感測區100B中對應可見光波帶(即400-700奈米)的量子效率大致維持不變。此外,在具有紅外光吸收增強件110下,近紅外光在紅外光像素中的量子效率與其對紅色、綠色和藍色像素的串音的比值亦提升,而可見光在紅色、綠色和藍色像素中的量子效率與其對紅外光像素的串音的比值大致維持相同。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100:影像感測器結構
100B:藍光感測區
100C:可見光感測區
100G:綠光感測區
100IR:紅外光感測區
100R:紅光感測區
102:半導體基板
102A:前側
102B:背側
104A-104D:光感測元件
106:元件層
106A:電晶體
106B:導線
106C:介層窗
108:承載基板
110:紅外光吸收增強件
112:紅外光陷波濾光器
114:彩色濾光器
114B:藍光濾光部
114G:綠光濾光部
114R:紅光濾光部
116:紅外光通過濾光器
118:微透鏡
310,320:曲線
為了更完整了解實施例及其優點,現參照結合所附圖式所做之下列描述,其中:
[圖1]為依據本發明一些實施例之影像感測器結構的剖視圖;
[圖2A]至[圖2G]為繪示依據本發明一些實施例之形成[圖1]之影像感測器結構的方法之各中間階段的剖面示意圖;
[圖3]示出在不具有濾光器下,本發明之影像感測器結構與傳統在半導體基板的光接收側不具紅外光吸收增強件之影像感測器結構在紅外光感測區中入射光波長與量子效率的對應關係;
[圖4A]示出具有中心截止波長為850奈米之紅外光陷波濾光器但不具有紅外光吸收增強件的影像感測器結構在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係;
[圖4B]示出具有中心截止波長為850奈米之紅外光陷波濾光器及紅外光吸收增強件的影像感測器結構在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係;
[圖5A]示出不具有中心截止波長為850奈米之紅外光陷波濾光器及紅外光吸收增強件的影像感測器結構在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係;以及
[圖5B]示出不具有中心截止波長為850奈米之紅外光陷波濾光器但具有紅外光吸收增強件的影像感測器結構在紅色像素、綠色像素、藍色像素和紅外光像素中入射光波長與量子效率的對應關係。
100:影像感測器結構
100B:藍光感測區
100C:可見光感測區
100G:綠光感測區
100IR:紅外光感測區
100R:紅光感測區
102:半導體基板
102A:前側
102B:背側
104A-104D:光感測元件
106:元件層
106A:電晶體
106B:導線
106C:介層窗
108:承載基板
110:紅外光吸收增強件
112:紅外光陷波濾光器
114:彩色濾光器
114B:藍光濾光部
114G:綠光濾光部
114R:紅光濾光部
116:紅外光通過濾光器
118:微透鏡
Claims (9)
- 一種影像感測器結構,其具有相鄰之一可見光感測區及一紅外光感測區,該影像感測器結構包含: 一半導體基板,其具有相對之一前側及一背側; 複數個光感測元件,設置在該半導體基板之前側; 至少一紅外光吸收增強件,設置在該半導體基板之背側,且僅在該紅外光感測區中; 一彩色濾光器,位於該半導體基板之背側上且在該可見光感測區中;以及 一紅外光通過濾光器,位於該至少一紅外光吸收增強件上。
- 如請求項1所述之影像感測器結構,更包含: 一紅外光陷波濾光器,位於該半導體基板之背側上且在該可見光感測區中。
- 如請求項2所述之影像感測器結構,其中該紅外光陷波濾光器設於該半導體基板與該彩色濾光器之間。
- 如請求項1所述之影像感測器結構,更包含: 複數個微透鏡,分別位於該彩色濾光器和該紅外光通過濾光器上。
- 如請求項1所述之影像感測器結構,其中該紅外光通過濾光器具有700奈米至1100奈米之光通過波段。
- 如請求項5所述之影像感測器結構,其中該紅外光通過濾光器之光通過波段的中心波長約為850奈米。
- 如請求項5所述之影像感測器結構,其中該紅外光通過濾光器之光通過波段的中心波長約為940奈米。
- 如請求項1所述之影像感測器結構,更包含: 一元件層,位於該半導體基板之前側上;以及 一承載基板,位於該元件層上。
- 如請求項1所述之影像感測器結構,其中該至少一紅外光吸收增強件包含二氧化矽。
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