TW202126128A - Metal-clad laminate and circuit substrate capable of reducing transmission loss even in high-frequency transmission and excellent in dimensional stability - Google Patents

Metal-clad laminate and circuit substrate capable of reducing transmission loss even in high-frequency transmission and excellent in dimensional stability Download PDF

Info

Publication number
TW202126128A
TW202126128A TW109146039A TW109146039A TW202126128A TW 202126128 A TW202126128 A TW 202126128A TW 109146039 A TW109146039 A TW 109146039A TW 109146039 A TW109146039 A TW 109146039A TW 202126128 A TW202126128 A TW 202126128A
Authority
TW
Taiwan
Prior art keywords
layer
transmission loss
suppression layer
diamine
metal
Prior art date
Application number
TW109146039A
Other languages
Chinese (zh)
Inventor
鈴木智之
Original Assignee
日商日鐵化學材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日鐵化學材料股份有限公司 filed Critical 日商日鐵化學材料股份有限公司
Publication of TW202126128A publication Critical patent/TW202126128A/en

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/036Multilayers with layers of different types
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/70Other properties
    • B32B2307/732Dimensional properties
    • B32B2307/734Dimensional stability
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2379/00Other polymers having nitrogen, with or without oxygen or carbon only, in the main chain
    • B32B2379/08Polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment

Abstract

The present invention provides a metal-clad laminate and a circuit substrate capable of reducing transmission loss even in high-frequency transmission and excellent in dimensional stability. The metal-clad laminate includes: a first metal layer, a first transmission loss suppression layer in contact with one side of the first metal layer, a second metal layer, a second transmission loss suppression layer in contact with one side of the second metal layer, and a plurality of resin layers interposed between the first transmission loss suppression layer and the second transmission loss suppression layer. A resin laminate comprises the first transmission loss suppression layer, the second transmission loss suppression layer, at least two or more dimensional accuracy maintaining layers and an intermediate transmission loss suppression layer laminated between the dimensional accuracy maintaining layers. In the metal-clad laminate, when the dielectric loss tangent of the first transmission loss suppression layer and the second transmission loss suppression layer at 10 GHz is set to Df1, and the dielectric loss tangent of the dimensional accuracy maintaining layer is set to Df2, Df1 is less than Df2.

Description

覆金屬層疊板及電路基板Metal-clad laminated board and circuit substrate

本發明是有關於一種有效用作電子零件的覆金屬層疊板及電路基板。The present invention relates to a metal-clad laminate and a circuit board that are effectively used as electronic parts.

近年來,伴隨電子設備的小型化、輕量化、省空間化的進展,薄且輕量、具有可撓性並且即便反覆彎曲也具有優異的耐久性的柔性印刷佈線板(Flexible Printed Circuits,FPC)的需要增大。FPC即便在有限的空間中也可實現立體且高密度的安裝,因此,例如在硬磁碟驅動機(Hard Disk Drive,HDD)、數位影音光碟(Digital Video Disk,DVD)、智慧型手機等電子設備的可動部分的佈線或電纜、連接器等零件中其用途正逐漸擴大。In recent years, along with advances in the miniaturization, weight reduction, and space saving of electronic equipment, flexible printed circuit boards (FPC) are thin, lightweight, flexible, and have excellent durability even if they are repeatedly bent. The need for increased. FPC can achieve three-dimensional and high-density installation even in a limited space. Therefore, for example, in hard disk drives (Hard Disk Drive, HDD), digital video discs (Digital Video Disk, DVD), smart phones and other electronic devices The use of wiring of moving parts of equipment, cables, connectors and other parts is gradually expanding.

除所述高密度化以外,設備的高性能化得到推進,因此也必須應對傳輸信號的高頻化。在傳輸高頻信號時,在傳輸路徑中的傳輸損耗大的情況下,產生電信號的損失或信號的延遲時間變長等不良情況。因此,今後在FPC中,傳輸損耗的減少也變得重要。In addition to the above-mentioned higher density, higher performance of equipment is being promoted, so it is also necessary to cope with the higher frequency of transmission signals. When high-frequency signals are transmitted, when the transmission loss in the transmission path is large, disadvantages such as loss of electrical signals or increased delay time of signals occur. Therefore, in FPC in the future, the reduction of transmission loss will also become important.

為了改善高頻傳輸特性,提出了將在聚醯亞胺膜的兩面上層疊包含氟樹脂的膜而成的積層體用作絕緣樹脂層(專利文獻1)。專利文獻1的絕緣樹脂層使用了氟系樹脂,因此在介電特性方面優異,但尺寸穩定性存在問題,特別是在應用於FPC的情況下,擔憂由蝕刻引起的電路加工前後的尺寸變化與加熱處理前後的尺寸變化變大。In order to improve high-frequency transmission characteristics, it has been proposed to use a laminate in which a fluororesin-containing film is laminated on both sides of a polyimide film as an insulating resin layer (Patent Document 1). The insulating resin layer of Patent Document 1 uses a fluorine-based resin, so it is excellent in terms of dielectric properties, but there are problems with dimensional stability. Especially when applied to FPC, there is concern about dimensional changes before and after circuit processing caused by etching. The dimensional change before and after the heat treatment becomes larger.

為了改善高頻傳輸特性,提出了通過導入有特定的二胺殘基的黏接層而將兩個的單面覆金屬層疊板貼合併加以層疊,並且控制樹脂層整體及黏接層的厚度(專利文獻2)。然而,在專利文獻2中,因單面覆金屬層疊板的絕緣層而導致低介電損耗正切的黏接層與金屬層(佈線)的距離遠,因此傳輸損耗的減少效果有進一步改善的餘地。 [現有技術文獻]In order to improve the high-frequency transmission characteristics, it is proposed that two single-sided metal-clad laminates are laminated and laminated by introducing an adhesive layer with specific diamine residues, and the thickness of the entire resin layer and the adhesive layer are controlled ( Patent Document 2). However, in Patent Document 2, the low dielectric loss tangent adhesive layer and the metal layer (wiring) are far away due to the insulating layer of the single-sided metal-clad laminate, so there is room for further improvement in the reduction effect of transmission loss . [Prior Art Literature]

[專利文獻] [專利文獻1]日本專利特開2004-216830號公報 [專利文獻2]日本專利特開2018-170417號公報[Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 2004-216830 [Patent Document 2] Japanese Patent Laid-Open No. 2018-170417

[發明所要解決的問題] 本發明的目的為提供一種即便在高頻傳輸中也能減少傳輸損耗且尺寸穩定性優異的覆金屬層疊板及電路基板。 [解決問題的技術手段][The problem to be solved by the invention] The object of the present invention is to provide a metal-clad laminate and a circuit board that can reduce transmission loss even in high-frequency transmission and are excellent in dimensional stability. [Technical means to solve the problem]

本發明者們進行努力研究,結果發現:通過以與一對金屬層(佈線)相接的方式分別設置低介電損耗正切的傳輸損耗抑制層,並且在傳輸損耗抑制層之間設置利用中間傳輸損耗抑制層層疊多層尺寸精度維持層而成的結構,並將尺寸精度維持層的合計厚度相對於樹脂層整體的厚度的比率設為一定以上,即便增大樹脂層整體的厚度,也可抑制佈線的位置偏移,並可使傳輸損耗的減少與尺寸精度的維持並存。The inventors of the present invention conducted diligent studies and found that by providing low-dielectric loss tangent transmission loss suppression layers in contact with a pair of metal layers (wiring), and using intermediate transmission between the transmission loss suppression layers The loss suppression layer is a structure in which multiple dimensional accuracy maintenance layers are laminated, and the ratio of the total thickness of the dimensional accuracy maintenance layer to the thickness of the entire resin layer is set to a certain value or more. Even if the thickness of the entire resin layer is increased, wiring can be suppressed Offset of the position, and can make the reduction of transmission loss and the maintenance of dimensional accuracy coexist.

本發明的覆金屬層疊板包括:第一金屬層、與所述第一金屬層的單側相接設置的第一傳輸損耗抑制層、第二金屬層、與所述第二金屬層的單側相接設置的第二傳輸損耗抑制層、以及介隔存在於所述第一傳輸損耗抑制層與所述第二傳輸損耗抑制層之間的多層樹脂層。 在本發明的覆金屬層疊板中,由所述第一傳輸損耗抑制層、所述第二傳輸損耗抑制層及所述多層樹脂層形成樹脂積層體,所述樹脂積層體具有至少兩層以上的尺寸精度維持層、及層疊於所述尺寸精度維持層之間的中間傳輸損耗抑制層。 而且,本發明的覆金屬層疊板滿足下述條件i及條件ii; i)在將所述第一傳輸損耗抑制層及所述第二傳輸損耗抑制層的介電損耗正切設為Df1 、將所述尺寸精度維持層的介電損耗正切設為Df2 時,處於Df1 <Df2 的關係,所述介電損耗正切為在23℃、50%RH的恆溫恆濕條件(常態)下調濕24小時後,通過分離介質諧振器(Split Post Dielectric Resonator,SPDR)而測定的10 GHz下的介電損耗正切; ii)所述尺寸精度維持層的合計厚度處於所述樹脂積層體的合計厚度的25%~60%的範圍內。 本發明的電路基板包括:第一佈線層、與所述第一佈線層的單側相接設置的第一傳輸損耗抑制層、第二佈線層、與所述第二佈線層的單側相接設置的第二傳輸損耗抑制層、以及介隔存在於所述第一傳輸損耗抑制層與所述第二傳輸損耗抑制層之間的多層樹脂層。The metal-clad laminate of the present invention includes: a first metal layer, a first transmission loss suppression layer provided in contact with one side of the first metal layer, a second metal layer, and one side of the second metal layer A second transmission loss suppression layer is provided adjacent to each other, and a multilayer resin layer intervening between the first transmission loss suppression layer and the second transmission loss suppression layer. In the metal-clad laminate of the present invention, a resin laminate is formed by the first transmission loss suppression layer, the second transmission loss suppression layer, and the multilayer resin layer, and the resin laminate has at least two layers of A dimensional accuracy maintaining layer and an intermediate transmission loss suppressing layer laminated between the dimensional accuracy maintaining layers. Furthermore, the metal-clad laminate of the present invention satisfies the following condition i and condition ii; i) When the dielectric loss tangent of the first transmission loss suppression layer and the second transmission loss suppression layer is Df 1 , and When the dielectric loss tangent of the dimensional accuracy maintaining layer is set to Df 2 , it is in the relationship of Df 1 <Df 2 , and the dielectric loss tangent is humidity control under constant temperature and humidity conditions (normal state) at 23°C and 50% RH After 24 hours, the dielectric loss tangent at 10 GHz measured by a Split Post Dielectric Resonator (SPDR); ii) The total thickness of the dimensional accuracy maintaining layer is less than the total thickness of the resin laminate Within the range of 25% to 60%. The circuit board of the present invention includes: a first wiring layer, a first transmission loss suppression layer provided in contact with a single side of the first wiring layer, a second wiring layer, and a single side contact with the second wiring layer A second transmission loss suppression layer is provided, and a multilayer resin layer interposed between the first transmission loss suppression layer and the second transmission loss suppression layer.

本發明的電路基板中,由所述第一傳輸損耗抑制層、所述第二傳輸損耗抑制層及所述多層樹脂層形成樹脂積層體,所述樹脂積層體具有至少兩層以上的尺寸精度維持層、及層疊於所述尺寸精度維持層之間的中間傳輸損耗抑制層。 而且,本發明的電路基板滿足下述條件i及條件ii; i)在將所述第一傳輸損耗抑制層及所述第二傳輸損耗抑制層的介電損耗正切設為Df1 、將所述尺寸精度維持層的介電損耗正切設為Df2 時,處於Df1 <Df2 的關係,所述介電損耗正切為在23℃、50%RH的恆溫恆濕條件(常態)下調濕24小時後,通過分離介質諧振器(SPDR)而測定的10 GHz下的介電損耗正切; ii)所述尺寸精度維持層的合計厚度處於所述樹脂積層體的合計厚度的25%~60%的範圍內。In the circuit board of the present invention, a resin laminate is formed by the first transmission loss suppression layer, the second transmission loss suppression layer, and the multilayer resin layer, and the resin laminate has at least two or more layers of maintaining dimensional accuracy Layer, and an intermediate transmission loss suppression layer laminated between the dimensional accuracy maintaining layers. Furthermore, the circuit board of the present invention satisfies the following condition i and condition ii; i) When the dielectric loss tangent of the first transmission loss suppression layer and the second transmission loss suppression layer is Df 1 , the When the dielectric loss tangent of the dimensional accuracy maintaining layer is set to Df 2 , it is in the relationship of Df 1 <Df 2 , and the dielectric loss tangent is humidity control for 24 hours under the constant temperature and humidity condition (normal state) of 23°C and 50%RH After that, the dielectric loss tangent at 10 GHz measured by the separation dielectric resonator (SPDR); ii) The total thickness of the dimensional accuracy maintaining layer is in the range of 25% to 60% of the total thickness of the resin laminate Inside.

在本發明的覆金屬層疊板或電路基板中,所述尺寸精度維持層可以是100℃至250℃的溫度區域內的儲存彈性係數的最小值可為1.0 GPa~8.0 GPa的範圍內、熱膨脹係數為15 ppm/K~25 ppm/K的範圍內的低熱膨脹性聚醯亞胺層。In the metal-clad laminate or circuit board of the present invention, the dimensional accuracy maintaining layer may have a storage elastic coefficient in a temperature range of 100°C to 250°C. The minimum value of the storage elasticity coefficient may be in the range of 1.0 GPa to 8.0 GPa, and the coefficient of thermal expansion It is a low thermal expansion polyimide layer in the range of 15 ppm/K to 25 ppm/K.

在本發明的覆金屬層疊板或電路基板中,構成所述第一傳輸損耗抑制層及第二傳輸損耗抑制層的樹脂可為使酸酐成分與二胺成分反應而成的聚醯亞胺,且相對於所述二胺成分的總量100莫耳份而含有50莫耳份以上的二聚酸的兩個末端羧酸基被一級氨基甲基或氨基取代而成的二聚物二胺。 [發明的效果]In the metal-clad laminate or circuit board of the present invention, the resin constituting the first transmission loss suppression layer and the second transmission loss suppression layer may be polyimide formed by reacting an acid anhydride component and a diamine component, and A dimer diamine in which two terminal carboxylic acid groups of a dimer acid containing 50 mol parts or more of dimer acid are substituted with primary aminomethyl groups or amino groups with respect to 100 mol parts of the total amount of the diamine components. [Effects of the invention]

本發明的覆金屬層疊板由於以與一對金屬層(佈線)相接的方式分別設置有低介電損耗正切的傳輸損耗抑制層,因此可有效地抑制高頻信號傳輸中的傳輸損耗。另外,由於在傳輸損耗抑制層之間設置層疊多層尺寸精度維持層與中間傳輸損耗抑制層而成的結構,並且將尺寸精度維持層的合計厚度相對於樹脂層整體的厚度的比率設為一定以上,因此可確保高尺寸穩定性,同時實現低介電化。因此,本發明的覆金屬層疊板例如在應用於傳輸頻率為10 GHz以上的高頻信號的電路基板等的情況下,能有效地減少傳輸損耗。Since the metal-clad laminate of the present invention is provided with low-dielectric loss tangent transmission loss suppression layers so as to be in contact with a pair of metal layers (wirings), it can effectively suppress transmission loss in high-frequency signal transmission. In addition, since a structure in which a plurality of dimensional accuracy maintaining layers and an intermediate transmission loss suppressing layer are laminated between the transmission loss suppression layers, and the ratio of the total thickness of the dimensional accuracy maintaining layers to the thickness of the entire resin layer is set to be constant or more , So it can ensure high dimensional stability, while achieving low dielectric. Therefore, when the metal-clad laminate of the present invention is applied to, for example, a circuit board that transmits a high-frequency signal with a frequency of 10 GHz or higher, the transmission loss can be effectively reduced.

適宜參照圖式來對本發明的實施方式進行說明。The embodiments of the present invention will be described with reference to the drawings as appropriate.

[覆金屬層疊板] 圖1是表示本發明的一實施方式的覆金屬層疊板的結構的示意圖。本實施方式的覆金屬層疊板10包括: 第一金屬層M1、 與第一金屬層M1的單側相接設置的第一傳輸損耗抑制層BS1、 第二金屬層M2、 與第二金屬層M2的單側相接設置的第二傳輸損耗抑制層BS2、以及 介隔存在於第一傳輸損耗抑制層BS1與第二傳輸損耗抑制層BS2之間的多層樹脂層。 覆金屬層疊板10在與一對金屬層(成為佈線的第一金屬層M1及第二金屬層M2)最近接的位置分別設置有低介電損耗正切的第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2,因此可有效地抑制高頻信號傳輸中的傳輸損耗。 此處,由第一傳輸損耗抑制層BS1、第二傳輸損耗抑制層BS2及多層樹脂層形成樹脂積層體20。所述樹脂積層體20除具有第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2以外,還具有至少兩層以上的尺寸精度維持層PL與層疊於尺寸精度維持層PL之間的中間傳輸損耗抑制層BS3。 如上所述,在第一傳輸損耗抑制層BS1與第二傳輸損耗抑制層BS2之間設置尺寸精度維持層PL與中間傳輸損耗抑制層BS3的層疊結構,藉此可確保高尺寸穩定性,同時實現低介電化。 再者,樹脂積層體20也可具有所述以外的任意樹脂層,但優選為僅由具有所述各功能的樹脂層形成。[Metal Clad Laminate] FIG. 1 is a schematic diagram showing the structure of a metal-clad laminate according to an embodiment of the present invention. The metal-clad laminate 10 of this embodiment includes: The first metal layer M1, The first transmission loss suppression layer BS1 is provided in contact with one side of the first metal layer M1 The second metal layer M2, A second transmission loss suppression layer BS2 provided in contact with one side of the second metal layer M2, and A multilayer resin layer existing between the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 is interposed. The metal-clad laminate 10 is provided with a first transmission loss suppression layer BS1 and a second low-dielectric loss tangent at the positions closest to the pair of metal layers (the first metal layer M1 and the second metal layer M2 that become the wiring). The transmission loss suppression layer BS2 can effectively suppress transmission loss in high-frequency signal transmission. Here, the resin laminate 20 is formed by the first transmission loss suppression layer BS1, the second transmission loss suppression layer BS2, and the multilayer resin layer. In addition to the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2, the resin laminate 20 also has at least two or more dimensional accuracy maintenance layers PL and an intermediate transmission layer laminated between the dimensional accuracy maintenance layer PL Loss suppression layer BS3. As described above, the laminated structure of the dimensional accuracy maintaining layer PL and the intermediate transmission loss suppressing layer BS3 is provided between the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2, thereby ensuring high dimensional stability while achieving Low dielectric. In addition, the resin laminated body 20 may have any resin layer other than the above, but it is preferable to form only the resin layer which has each function mentioned above.

如圖1所示,第一金屬層M1與第二金屬層M2分別位於最外側,與它們的內側相接地配置有第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2,進而,在第一傳輸損耗抑制層BS1與第二傳輸損耗抑制層BS2之間介在配置有包含多層尺寸精度維持層PL與中間傳輸損耗抑制層BS3在內的多層樹脂層。此處,第一傳輸損耗抑制層BS1與一尺寸精度維持層PL相鄰接,第二傳輸損耗抑制層BS2與另一尺寸精度維持層PL相接。As shown in FIG. 1, the first metal layer M1 and the second metal layer M2 are respectively located on the outermost side, and a first transmission loss suppression layer BS1 and a second transmission loss suppression layer BS2 are arranged in contact with their inner sides. A multilayer resin layer including a multilayer dimensional accuracy maintaining layer PL and an intermediate transmission loss suppressing layer BS3 is arranged between the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2. Here, the first transmission loss suppression layer BS1 is adjacent to a dimensional accuracy maintaining layer PL, and the second transmission loss suppression layer BS2 is adjacent to another dimensional accuracy maintaining layer PL.

圖1所示的覆金屬層疊板10具有兩層尺寸精度維持層PL與一層中間傳輸損耗抑制層BS3,但尺寸精度維持層PL只要為兩層以上即可,中間傳輸損耗抑制層BS3的層數並無特別限制。例如,可為如圖2所示,具有三層尺寸精度維持層PL與兩層中間傳輸損耗抑制層BS3的結構,也可為如圖3所示,具有五層尺寸精度維持層PL與四層中間傳輸損耗抑制層BS3的結構。The metal-clad laminate 10 shown in FIG. 1 has two dimensional accuracy maintenance layers PL and one intermediate transmission loss suppression layer BS3, but the dimensional accuracy maintenance layer PL only needs to be two or more layers. The number of layers of the intermediate transmission loss suppression layer BS3 There are no special restrictions. For example, it may be a structure having three dimensional accuracy maintaining layers PL and two intermediate transmission loss suppression layers BS3 as shown in FIG. 2, or it may be a structure having five dimensional accuracy maintaining layers PL and four layers as shown in FIG. The structure of the intermediate transmission loss suppression layer BS3.

在覆金屬層疊板10中,第一金屬層M1及第二金屬層M2的結構可相同也可不同,但優選為相同材質、相同物性、相同厚度。In the metal-clad laminate 10, the structures of the first metal layer M1 and the second metal layer M2 may be the same or different, but are preferably the same material, the same physical properties, and the same thickness.

另外,第一傳輸損耗抑制層BS1與第二傳輸損耗抑制層BS2的結構可相同也可不同,但優選為相同材質、相同物性、相同厚度。例如,通過使第一傳輸損耗抑制層BS1與第二傳輸損耗抑制層BS2的介質損耗正切或厚度相同,製作高頻傳輸用電路基板時的傳輸損耗減少設計變得容易。In addition, the structures of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 may be the same or different, but are preferably the same material, the same physical properties, and the same thickness. For example, by making the dielectric loss tangent or thickness of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 the same, design for reduction of transmission loss when manufacturing a circuit board for high-frequency transmission becomes easy.

進而,第一傳輸損耗抑制層BS1、第二傳輸損耗抑制層BS2及中間傳輸損耗抑制層BS3的結構可相同也可不同,但為了改善樹脂積層體20整體的介電特性並有效地抑制高頻信號的傳輸損耗,優選為相同材質、相同物性。Furthermore, the structures of the first transmission loss suppression layer BS1, the second transmission loss suppression layer BS2, and the intermediate transmission loss suppression layer BS3 may be the same or different, but in order to improve the overall dielectric properties of the resin laminate 20 and effectively suppress high frequency The signal transmission loss is preferably the same material and the same physical properties.

多層尺寸精度維持層PL的結構可相同也可不同,但就容易設計製作電路基板時的機械強度或尺寸精度的方面而言,優選為相同材質、相同物性、相同厚度、相同層結構。The structure of the multilayer dimensional accuracy maintaining layer PL may be the same or different, but in terms of easy design and manufacture of the circuit board, mechanical strength or dimensional accuracy, the same material, the same physical properties, the same thickness, and the same layer structure are preferable.

覆金屬層疊板10滿足下述條件i及條件ii。The metal-clad laminate 10 satisfies the following condition i and condition ii.

條件i: 在將第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2的介電損耗正切設為Df1 、將尺寸精度維持層PL的介電損耗正切設為Df2 時,處於Df1 <Df2 的關係。 通過將分別與應成為高頻信號的傳輸路徑即電路佈線的第一金屬層M1及第二金屬層M2相接的第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2的介電損耗正切Df1 設計得低於尺寸精度維持層PL的介電損耗正切Df2 ,可有效地抑制高頻信號的傳輸損耗。再者,即便在第一傳輸損耗抑制層BS1與第二傳輸損耗抑制層BS2的介電損耗正切不同的情況下,也均需要滿足Df1 <Df2 的關係。在本發明中,在並無特別明確記載的情況下,介電常數及介電損耗正切是指在23℃、50%RH的恆溫恆濕條件(常態)下調濕24小時後,通過分離介質諧振器(SPDR)而測定的10 GHz下的介電常數及介電損耗正切。Condition i: When the dielectric loss tangent of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 is Df 1 , and the dielectric loss tangent of the dimensional accuracy maintaining layer PL is Df 2 , it is Df 1 <Df 2 relationship. Dielectric loss tangents of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 respectively connected to the first metal layer M1 and the second metal layer M2 that should be the transmission path of the high-frequency signal, that is, the circuit wiring Df 1 is designed to be lower than the dielectric loss tangent Df 2 of the dimensional accuracy maintaining layer PL, which can effectively suppress the transmission loss of high-frequency signals. Furthermore, even when the dielectric loss tangents of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 are different, both of them need to satisfy the relationship of Df 1 <Df 2. In the present invention, unless specifically stated otherwise, the dielectric constant and the dielectric loss tangent refer to the resonant vibration of the separation medium after adjusting the humidity for 24 hours under the constant temperature and humidity condition of 23°C and 50% RH (normal state) The dielectric constant and dielectric loss tangent at 10 GHz measured by the SPDR.

就實現高頻信號的傳輸損耗的抑制的觀點而言,第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2的10 GHz下的介質損耗正切Df1 優選為0.005以下,更優選為0.003以下。From the viewpoint of achieving suppression of transmission loss of high-frequency signals, the dielectric loss tangent Df 1 at 10 GHz of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 is preferably 0.005 or less, more preferably 0.003 or less .

再者,就實現高頻信號的傳輸損耗的抑制的觀點而言,與條件i同樣地測定的10 GHz下的中間傳輸損耗抑制層BS3的介質損耗正切Df3 優選為0.005以下,更優選為0.003以下,最優選為與第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2的介質損耗正切Df1 相同。Furthermore, from the viewpoint of achieving suppression of transmission loss of high-frequency signals, the dielectric loss tangent Df 3 of the intermediate transmission loss suppression layer BS3 at 10 GHz measured in the same manner as condition i is preferably 0.005 or less, and more preferably 0.003 Hereinafter, it is most preferable to be the same as the dielectric loss tangent Df 1 of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2.

另外,尺寸精度維持層PL的介電損耗正切Df2 理想為盡可能低,但由於是以維持尺寸精度與機械強度為主要目的的層,因此只要以滿足條件i為前提而優選為0.012以下即可,更優選為以0.010以下為宜。原因在於:即便尺寸精度維持層PL的介電損耗正切Df2 稍微變高,通過與介電損耗正切更低的第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2以及中間傳輸損耗抑制層BS3層疊,並考慮與它們的厚度比率,也可保證樹脂積層體20整體的低介電化。In addition, the dielectric loss tangent Df 2 of the dimensional accuracy maintaining layer PL is desirably as low as possible, but since it is a layer whose main purpose is to maintain dimensional accuracy and mechanical strength, it is preferably 0.012 or less as long as the condition i is satisfied. Yes, it is more preferably 0.010 or less. The reason is that even if the dielectric loss tangent Df 2 of the dimensional accuracy maintaining layer PL becomes slightly higher, the first transmission loss suppression layer BS1, the second transmission loss suppression layer BS2, and the intermediate transmission loss suppression layer having a lower dielectric loss tangent The BS3 is laminated, and considering the thickness ratio to these, the low dielectric of the entire resin laminate 20 can also be ensured.

條件ii: 尺寸精度維持層PL的合計厚度TPL 處於樹脂積層體20(即,第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2、一層乃至多層中間傳輸損耗抑制層BS3、多層尺寸精度維持層PL)的總厚度T的25%~60%的範圍內。 通過將多層尺寸精度維持層PL的合計厚度TPL 與樹脂積層體20的總厚度T的比率設為所述範圍內,可維持對覆金屬層疊板10進行電路加工時的尺寸精度與機械強度,同時可實現高頻信號的傳輸損耗的減少。就所述觀點而言,厚度TPL 相對於總厚度T的比率優選為25%~50%的範圍內。Condition ii: The total thickness T PL of the dimensional accuracy maintaining layer PL is in the resin laminate 20 (that is, the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2, one or more intermediate transmission loss suppression layers BS3, and the multilayer dimensional accuracy The maintenance layer PL) is in the range of 25% to 60% of the total thickness T. By setting the ratio of the total thickness T PL of the multilayer dimensional accuracy maintaining layer PL to the total thickness T of the resin laminate 20 within the above range, it is possible to maintain the dimensional accuracy and mechanical strength when the metal-clad laminate 10 is subjected to circuit processing. At the same time, the transmission loss of high-frequency signals can be reduced. From the above viewpoint, the ratio of the thickness T PL to the total thickness T is preferably in the range of 25% to 50%.

此處,樹脂積層體20中的各層的厚度可根據使用目的來適宜設定,因此並無特別限定,但可如下所述般例示。 第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2的一層的厚度優選為2 μm~100 μm的範圍內,更優選為5 μm~75 μm的範圍內。 尺寸精度維持層PL的一層的厚度優選為10 μm~100 μm的範圍內,更優選為12 μm~50 μm的範圍內。 中間傳輸損耗抑制層BS3的一層的厚度優選為12 μm~150 μm的範圍內,更優選為25 μm~100 μm的範圍內。 樹脂積層體20的總厚度T優選為50 μm~300 μm的範圍內,更優選為75 μm~200 μm的範圍內。Here, the thickness of each layer in the resin laminate 20 can be appropriately set according to the purpose of use, and therefore is not particularly limited, but can be exemplified as follows. The thickness of one layer of the first transmission loss suppression layer BS1 and the second transmission loss suppression layer BS2 is preferably in the range of 2 μm to 100 μm, and more preferably in the range of 5 μm to 75 μm. The thickness of one layer of the dimensional accuracy maintaining layer PL is preferably in the range of 10 μm to 100 μm, and more preferably in the range of 12 μm to 50 μm. The thickness of one layer of the intermediate transmission loss suppression layer BS3 is preferably in the range of 12 μm to 150 μm, and more preferably in the range of 25 μm to 100 μm. The total thickness T of the resin laminate 20 is preferably in the range of 50 μm to 300 μm, and more preferably in the range of 75 μm to 200 μm.

另外,為了實現樹脂積層體20整體的低介電化,第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2與中間傳輸損耗抑制層BS3的合計厚度TB 相對於樹脂積層體20的總厚度T而優選為處於40%~75%的範圍內,更優選為50%~75%的範圍內。Further, in order to achieve a resin laminate 20 as a whole is a low dielectric of the first transmission loss inhibiting layer BS1 and the second transmission loss inhibiting layer BS2 and the intermediate transmission loss inhibiting layer BS3 total thickness T B relative to the total thickness of the resin laminate 20 T is preferably in the range of 40% to 75%, and more preferably in the range of 50% to 75%.

以下,對構成覆金屬層疊板10的各層進行說明。Hereinafter, each layer constituting the metal-clad laminate 10 will be described.

[金屬層] 作為第一金屬層M1及第二金屬層M2的材質,並無特別限制,例如可列舉:銅、不鏽鋼、鐵、鎳、鈹、鋁、鋅、銦、銀、金、錫、鋯、鉭、鈦、鉛、鎂、錳及它們的合金等。其中,特優選為銅或銅合金。再者,後述的本實施方式的電路基板中的佈線層的材質也與第一金屬層M1及第二金屬層M2相同。[Metal layer] The materials of the first metal layer M1 and the second metal layer M2 are not particularly limited. Examples include copper, stainless steel, iron, nickel, beryllium, aluminum, zinc, indium, silver, gold, tin, zirconium, tantalum, Titanium, lead, magnesium, manganese and their alloys, etc. Among them, copper or copper alloys are particularly preferred. In addition, the material of the wiring layer in the circuit board of the present embodiment described later is also the same as the first metal layer M1 and the second metal layer M2.

第一金屬層M1及第二金屬層M2的厚度並無特別限定,例如在使用銅箔等金屬箔的情況下,優選為35 μm以下,更優選為以5 μm~25 μm的範圍內為宜。就生產穩定性及處理性的觀點而言,金屬箔的厚度的下限值優選為設為5 μm。再者,在使用銅箔的情況下,可為軋製銅箔,也可為電解銅箔。另外,作為銅箔,可使用市售的銅箔。The thickness of the first metal layer M1 and the second metal layer M2 is not particularly limited. For example, when a metal foil such as copper foil is used, it is preferably 35 μm or less, and more preferably in the range of 5 μm to 25 μm. . From the viewpoint of production stability and handling properties, the lower limit of the thickness of the metal foil is preferably 5 μm. In addition, in the case of using copper foil, it may be rolled copper foil or electrolytic copper foil. In addition, as the copper foil, a commercially available copper foil can be used.

另外,關於金屬箔,例如以防鏽處理或黏接力的提高為目的,例如也可實施利用壁板(siding)、鋁醇化物、鋁螯合物、矽烷偶合劑等的表面處理。In addition, regarding the metal foil, for example, for the purpose of rust prevention treatment or improvement of adhesive strength, for example, surface treatment using siding, aluminum alcoholate, aluminum chelate, silane coupling agent, etc. may be performed.

[傳輸損耗抑制層] 構成第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2以及中間傳輸損耗抑制層BS3(以下,有時將它們總稱而記作「傳輸損耗抑制層BS1~傳輸損耗抑制層BS3」)的樹脂的玻璃化轉變溫度(Tg)優選為180℃以下,更優選為160℃以下。通過將傳輸損耗抑制層BS1~傳輸損耗抑制層BS3的玻璃化轉變溫度設為180℃以下,能進行低溫下的熱壓接,因此可緩和層疊時所產生的內部應力,並可抑制電路加工後的尺寸變化。若傳輸損耗抑制層BS1~傳輸損耗抑制層BS3的Tg超過180℃,則介隔存在於尺寸精度維持層PL之間進行黏接時的溫度變高而有損及電路加工後的尺寸穩定性之虞。[Transmission loss suppression layer] The resin constituting the first transmission loss suppression layer BS1, the second transmission loss suppression layer BS2, and the intermediate transmission loss suppression layer BS3 (hereinafter, these may be collectively referred to as "transmission loss suppression layer BS1-transmission loss suppression layer BS3") The glass transition temperature (Tg) of Tg is preferably 180°C or lower, and more preferably 160°C or lower. By setting the glass transition temperature of the transmission loss suppression layer BS1 to the transmission loss suppression layer BS3 to 180°C or less, thermocompression bonding at low temperature can be performed, so the internal stress generated during lamination can be relieved and the circuit processing can be suppressed. The size changes. If the Tg of the transmission loss suppression layer BS1 to the transmission loss suppression layer BS3 exceeds 180°C, the temperature at the time of bonding between the dimensional accuracy maintaining layers PL will increase, which will impair the dimensional stability after circuit processing. Yu.

傳輸損耗抑制層BS1~傳輸損耗抑制層BS3優選為100℃至250℃的溫度區域內的儲存彈性係數的最大值為1.0 GHz以下。若為此種儲存彈性係數,則可緩和熱壓接時的內部應力,並可保持電路加工後的尺寸穩定性。另外,即便在經過電路加工後的回流焊步驟之後,也不易產生翹曲。The transmission loss suppression layer BS1-the transmission loss suppression layer BS3 are preferably such that the maximum value of the storage elastic coefficient in the temperature range of 100° C. to 250° C. is 1.0 GHz or less. If this kind of storage elastic coefficient is used, the internal stress during thermal compression bonding can be alleviated, and the dimensional stability after circuit processing can be maintained. In addition, even after the reflow soldering step after circuit processing, warping is not likely to occur.

構成第一傳輸損耗抑制層BS1及第二傳輸損耗抑制層BS2以及中間傳輸損耗抑制層BS3的樹脂優選為聚醯亞胺,更優選為將使酸酐成分與二胺成分反應而獲得的前體的聚醯胺酸醯亞胺化所得的熱塑性聚醯亞胺(以下,有時記作「DDA系聚醯亞胺」)或其交聯硬化物,所述二胺成分相對於二胺成分的總量100莫耳份而含有50莫耳份以上的二聚酸的兩個末端羧酸基被一級氨基甲基或氨基取代而成的二聚物二胺。再者,在於本發明中稱為聚醯亞胺的情況下,除聚醯亞胺以外,還是指聚醯胺醯亞胺、聚醚醯亞胺、聚酯醯亞胺、聚矽氧烷醯亞胺、聚苯並咪唑醯亞胺等包含在分子結構中具有醯亞胺基的聚合物的樹脂。The resin constituting the first transmission loss suppression layer BS1, the second transmission loss suppression layer BS2, and the intermediate transmission loss suppression layer BS3 is preferably polyimide, and more preferably a precursor obtained by reacting an acid anhydride component with a diamine component The thermoplastic polyimide obtained by the imidization of polyamide (hereinafter, sometimes referred to as "DDA-based polyimide") or its cross-linked and cured product, the diamine component is relative to the total amount of the diamine component A dimer diamine in which the two terminal carboxylic acid groups of a dimer acid having an amount of 100 mol parts and 50 mol parts or more are substituted with a primary aminomethyl group or an amino group. Furthermore, in the case of polyimide in the present invention, in addition to polyimide, it still refers to polyimide, polyetherimide, polyesterimide, polysiloxane A resin containing a polymer having an imine group in a molecular structure, such as imine and polybenzimidazole imine.

<DDA系聚醯亞胺> DDA系聚醯亞胺為脂肪族系的熱塑性聚醯亞胺,富有可撓性,即使在大量添加液晶性高分子填料的情況下,也具有充分的韌性,在形成樹脂膜的情況下,保持其形狀的能力高。<DDA series polyimide> DDA-based polyimide is an aliphatic thermoplastic polyimide, which is rich in flexibility. Even when a large amount of liquid crystalline polymer filler is added, it has sufficient toughness. When a resin film is formed, it maintains Its shape capability is high.

DDA系聚醯亞胺包含由作為原料的四羧酸酐衍生的四羧酸殘基及由作為原料的二胺化合物衍生的二胺殘基。再者,在本發明中,四羧酸殘基表示由四羧酸二酐衍生的四價基,二胺殘基表示由二胺化合物衍生的二價基。通過使作為原料的四羧酸酐及二胺化合物以大致等莫耳反應,可使DDA系聚醯亞胺中所含的四羧酸殘基及二胺殘基的種類與量和原料的種類與量大致對應。The DDA-based polyimide contains a tetracarboxylic acid residue derived from a tetracarboxylic anhydride as a raw material and a diamine residue derived from a diamine compound as a raw material. Furthermore, in the present invention, the tetracarboxylic acid residue means a tetravalent group derived from tetracarboxylic dianhydride, and the diamine residue means a divalent group derived from a diamine compound. By reacting the tetracarboxylic anhydride and diamine compound as the raw material with approximately equal molar reaction, the type and amount of the tetracarboxylic acid residue and the diamine residue contained in the DDA-based polyimide and the type of the raw material can be changed The amount roughly corresponds.

(酸酐成分) DDA系聚醯亞胺可並無特別限制地使用通常在熱塑性聚醯亞胺中使用的四羧酸酐作為原料,但優選為相對於全部酸酐成分而含有合計90莫耳%以上的下述通式(1)和/或通式(2)所表示的四羧酸酐。換言之,DDA系聚醯亞胺優選為相對於全部四羧酸殘基100莫耳份而含有合計90莫耳份以上的由下述通式(1)和/或通式(2)所表示的四羧酸酐衍生的四羧酸殘基。通過相對於四羧酸殘基100莫耳份而含有合計90莫耳份以上的由下述通式(1)和/或通式(2)所表示的四羧酸酐衍生的四羧酸殘基,容易實現DDA系聚醯亞胺的柔軟性與耐熱性的並存而優選。若由下述通式(1)和/或通式(2)所表示的四羧酸酐衍生的四羧酸殘基的合計未滿90莫耳份,則存在DDA系聚醯亞胺的溶劑溶解性降低的傾向。(Anhydride component) DDA-based polyimine can be used as a raw material without particular limitation, tetracarboxylic anhydride generally used in thermoplastic polyimine, but it is preferable to contain 90 mol% or more of the following general formula in total with respect to all acid anhydride components (1) and/or tetracarboxylic anhydride represented by general formula (2). In other words, the DDA-based polyimide preferably contains a total of 90 mol parts or more, represented by the following general formula (1) and/or general formula (2), based on 100 mol parts of all tetracarboxylic acid residues. Tetracarboxylic acid residue derived from tetracarboxylic anhydride. By containing a total of 90 mol parts or more of tetracarboxylic acid residues derived from tetracarboxylic anhydrides represented by the following general formula (1) and/or general formula (2) with respect to 100 mol parts of tetracarboxylic acid residues , It is easy to realize the coexistence of flexibility and heat resistance of DDA-based polyimide, which is preferable. If the total amount of tetracarboxylic acid residues derived from the tetracarboxylic anhydride represented by the following general formula (1) and/or general formula (2) is less than 90 moles, the solvent of DDA-based polyimide will dissolve Tendency to decrease sex.

[化1]

Figure 02_image001
[化1]
Figure 02_image001

通式(1)中,X表示單鍵或選自下式中的二價基,通式(2)中,Y所表示的環狀部分表示形成選自4員環、5員環、6員環、7員環或8員環中的環狀飽和烴基。In the general formula (1), X represents a single bond or a divalent group selected from the following formulas. In the general formula (2), the cyclic moiety represented by Y represents a ring formed from a 4-membered ring, a 5-membered ring, and a 6-membered ring. A cyclic saturated hydrocarbon group in a ring, a 7-membered ring, or an 8-membered ring.

[化2]

Figure 02_image003
[化2]
Figure 02_image003

在所述式中,Z表示-C6 H4 -、-(CH2 )n-或-CH2 -CH(-O-C(=O)-CH3 )-CH2 -,n表示1~20的整數。In the formula, Z represents -C 6 H 4 -, -(CH 2 )n- or -CH 2 -CH(-OC(=O)-CH 3 )-CH 2 -, n represents 1-20 Integer.

作為所述通式(1)所表示的四羧酸酐,例如可列舉:3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-biphenyl tetracarboxylic dianhydride,BPDA)、3,3',4,4'-二苯甲酮四羧酸二酐(3,3',4,4'-benzophenone tetracarboxylic dianhydride,BTDA)、3,3',4,4'-二苯基碸四羧酸二酐(3,3',4,4'-diphenylsulfone tetracarboxylic dianhydride,DSDA)、4,4'-氧基二鄰苯二甲酸酐(4,4'-oxydiphthalic dianhydride,ODPA)、4,4'-(六氟亞異丙基)二鄰苯二甲酸酐(4,4'-(hexafluoroisopropylidene)diphthalic anhydride,6FDA)、2,2-雙[4-(3,4-二羧基苯氧基)苯基]丙烷二酐(2,2-bis[4-(3,4-dicarboxyphenoxy]propane dianhydride,BPADA)、對伸苯基雙(偏苯三甲酸單酯)酸酐(p-phenylene bis(trimellitic acid monoester)anhydride,TAHQ)、乙二醇雙偏苯三酸酐(ethylene glycol bistrimellitic anhydride,TMEG)等。這些中,特優選為3,3',4,4'-二苯甲酮四羧酸二酐(BTDA)。在使用BTDA的情況下,羰基(酮基)有助於黏接性,因此可提高DDA系聚醯亞胺的黏接性。另外,BTDA存在分子骨架中所存在的酮基與用以進行後述的交聯形成的氨基化合物的氨基反應而形成C=N鍵的情況,容易表現出提高耐熱性的效果。就此種觀點而言,以相對於四羧酸殘基100莫耳份而含有優選為50莫耳份以上、更優選為60莫耳份以上的由BTDA衍生的四羧酸殘基為宜。As the tetracarboxylic anhydride represented by the general formula (1), for example, 3,3',4,4'-biphenyl tetracarboxylic dianhydride (3,3',4,4'-biphenyl tetracarboxylic dianhydride) , BPDA), 3,3',4,4'-benzophenone tetracarboxylic dianhydride (3,3',4,4'-benzophenone tetracarboxylic dianhydride, BTDA), 3,3',4,4' -Diphenylsulfone tetracarboxylic dianhydride (3,3',4,4'-diphenylsulfone tetracarboxylic dianhydride, DSDA), 4,4'-oxydiphthalic dianhydride (4,4'-oxydiphthalic dianhydride, ODPA), 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-(hexafluoroisopropylidene)diphthalic anhydride, 6FDA), 2,2-bis[4-(3,4- Dicarboxyphenoxy) phenyl] propane dianhydride (2,2-bis[4-(3,4-dicarboxyphenoxy]propane dianhydride, BPADA), p-phenylene bis(trimellitic acid monoester) anhydride (p -phenylene bis (trimellitic acid monoester) anhydride, TAHQ), ethylene glycol bistrimellitic anhydride (TMEG), etc. Among these, 3,3',4,4'-benzophenone tetracarboxylic acid is particularly preferred Acid dianhydride (BTDA). In the case of BTDA, the carbonyl group (ketone group) contributes to the adhesion, so it can improve the adhesion of the DDA-based polyimide. In addition, BTDA has some existing in the molecular skeleton When the ketone group reacts with the amino group of the amino compound formed by crosslinking described later to form a C=N bond, it is easy to exhibit the effect of improving the heat resistance. From this point of view, it is relative to 100 tetracarboxylic acid residues. It is preferable to contain a tetracarboxylic acid residue derived from BTDA in a molar amount of preferably 50 molar parts or more, more preferably 60 molar parts or more.

另外,作為通式(2)所表示的四羧酸酐,例如可列舉:1,2,3,4-環丁烷四羧酸二酐、1,2,3,4-環戊烷四羧酸二酐、1,2,4,5-環己烷四羧酸二酐、1,2,4,5-環庚烷四羧酸二酐、1,2,5,6-環辛烷四羧酸二酐等。In addition, as the tetracarboxylic anhydride represented by the general formula (2), for example, 1,2,3,4-cyclobutane tetracarboxylic dianhydride, 1,2,3,4-cyclopentane tetracarboxylic acid can be cited Dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 1,2,4,5-cycloheptanetetracarboxylic dianhydride, 1,2,5,6-cyclooctane tetracarboxylic acid Acid dianhydride and so on.

DDA系聚醯亞胺可在不損及發明的效果的範圍內含有由所述通式(1)及通式(2)所表示的四羧酸酐以外的酸酐衍生的四羧酸殘基。作為此種四羧酸殘基,並無特別限制,例如可列舉由均苯四甲酸二酐、2,3',3,4'-聯苯四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐或2,3,3',4'-二苯甲酮四羧酸二酐、2,3',3,4'-二苯基醚四羧酸二酐、雙(2,3-二羧基苯基)醚二酐、3,3'',4,4''-對三聯苯四羧酸二酐、2,3,3'',4''-對三聯苯四羧酸二酐或2,2'',3,3''-對三聯苯四羧酸二酐、2,2-雙(2,3-二羧基苯基)-丙烷二酐或2,2-雙(3,4-二羧基苯基)-丙烷二酐、雙(2,3-二羧基苯基)甲烷二酐或雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)碸二酐或雙(3,4-二羧基苯基)碸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐或1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,7,8-菲-四羧酸二酐、1,2,6,7-菲-四羧酸二酐或1,2,9,10-菲-四羧酸二酐、2,3,6,7-蒽四羧酸二酐、2,2-雙(3,4-二羧基苯基)四氟丙烷二酐、1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、2,3,6,7-萘四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、2,6-二氯萘-1,4,5,8-四羧酸二酐或2,7-二氯萘-1,4,5,8-四羧酸二酐、2,3,6,7-(或1,4,5,8-)四氯萘-1,4,5,8-(或2,3,6,7-)四羧酸二酐、2,3,8,9-苝-四羧酸二酐、3,4,9,10-苝-四羧酸二酐、4,5,10,11-苝-四羧酸二酐或5,6,11,12-苝-四羧酸二酐、吡嗪-2,3,5,6-四羧酸二酐、吡咯烷-2,3,4,5-四羧酸二酐、噻吩-2,3,4,5-四羧酸二酐、4,4'-雙(2,3-二羧基苯氧基)二苯基甲烷二酐等芳香族四羧酸二酐衍生的四羧酸殘基。The DDA-based polyimide may contain a tetracarboxylic acid residue derived from an acid anhydride other than the tetracarboxylic anhydride represented by the general formula (1) and the general formula (2) within a range that does not impair the effect of the invention. The tetracarboxylic acid residue is not particularly limited, and examples include pyromellitic dianhydride, 2,3',3,4'-biphenyltetracarboxylic dianhydride, 2,2',3, 3'-benzophenone tetracarboxylic dianhydride or 2,3,3',4'-benzophenone tetracarboxylic dianhydride, 2,3',3,4'-diphenyl ether tetracarboxylic acid Dianhydride, bis(2,3-dicarboxyphenyl) ether dianhydride, 3,3``,4,4''-p-terphenyltetracarboxylic dianhydride, 2,3,3``,4'' -P-terphenyltetracarboxylic dianhydride or 2,2``,3,3''-p-terphenyltetracarboxylic dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-propane dianhydride Or 2,2-bis(3,4-dicarboxyphenyl)-propane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride or bis(3,4-dicarboxyphenyl)methane dianhydride , Bis(2,3-dicarboxyphenyl) dianhydride or bis(3,4-dicarboxyphenyl) dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride Or 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,2,7,8-phenanthrene-tetracarboxylic dianhydride, 1,2,6,7-phenanthrene-tetracarboxylic acid Dianhydride or 1,2,9,10-phenanthrene-tetracarboxylic dianhydride, 2,3,6,7-anthracene tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)tetra Fluoropropane dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 4,8-Dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4, 5,8-tetracarboxylic dianhydride or 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-(or 1,4,5,8- ) Tetrachloronaphthalene-1,4,5,8-(or 2,3,6,7-)tetracarboxylic dianhydride, 2,3,8,9-perylene-tetracarboxylic dianhydride, 3,4, 9,10-perylene-tetracarboxylic dianhydride, 4,5,10,11-perylene-tetracarboxylic dianhydride or 5,6,11,12-perylene-tetracarboxylic dianhydride, pyrazine-2,3 ,5,6-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4'-bis (2,3-Dicarboxyphenoxy) tetracarboxylic acid residue derived from aromatic tetracarboxylic dianhydride such as diphenylmethane dianhydride.

(二胺成分) DDA系聚醯亞胺使用如下二胺成分作為原料,所述二胺成分相對於二胺成分的總量100莫耳份而含有50莫耳份以上、更優選為70莫耳份以上的二聚酸的兩個末端羧酸基被一級氨基甲基或氨基取代而成的二聚物二胺。通過以所述量含有二聚物二胺,可改善聚醯亞胺的介電特性,並且可通過聚醯亞胺的玻璃化轉變溫度的低溫化(低Tg化)而改善熱壓接特性以及通過低彈性係數化而緩和內部應力。(Diamine component) The DDA-based polyimide uses the following diamine component as a raw material, the diamine component contains 50 mol parts or more, more preferably 70 mol parts or more of dimerization relative to 100 mol parts of the total amount of diamine components A dimer diamine in which the two terminal carboxylic acid groups of an acid are substituted by a primary aminomethyl group or an amino group. By containing the dimer diamine in this amount, the dielectric properties of the polyimine can be improved, and the thermocompression bonding properties can be improved by lowering the glass transition temperature of the polyimine (lower Tg) and The internal stress is alleviated by lowering the coefficient of elasticity.

所謂二聚物二胺,是指二聚酸的兩個末端羧酸基(-COOH)被一級氨基甲基(-CH2 -NH2 )或氨基(-NH2 )取代而成的二胺。二聚酸為通過不飽和脂肪酸的分子間聚合反應而獲得的已知的二元酸,其工業製造製程在業界已大致標準化,且可利用黏土催化劑等對碳數為11~22的不飽和脂肪酸進行二聚化而獲得。關於工業上獲得的二聚酸,主要成分為通過對油酸或亞油酸、亞麻酸等碳數18的不飽和脂肪酸進行二聚化而獲得的碳數36的二元酸,根據精製的程度而含有任意量的單體酸(碳數18)、三聚酸(碳數54)、碳數20~54的其他聚合脂肪酸。另外,在二聚化反應後殘存雙鍵,但本發明中,二聚酸中也包含進而進行氫化反應而使不飽和度降低的化合物。二聚物二胺可定義為將碳數處於18~54的範圍內、優選為22~44的範圍內的二元酸化合物的末端羧酸基取代為一級氨基甲基或氨基而獲得的二胺化合物。The so-called dimer diamine refers to a diamine in which the two terminal carboxylic acid groups (-COOH) of the dimer acid are replaced by a primary aminomethyl group (-CH 2 -NH 2 ) or an amino group (-NH 2 ). Dimer acid is a known dibasic acid obtained by intermolecular polymerization of unsaturated fatty acids. Its industrial manufacturing process has been roughly standardized in the industry, and clay catalysts and other unsaturated fatty acids with carbon numbers of 11-22 can be used. Obtained by dimerization. Regarding the industrially obtained dimer acid, the main component is the 36 carbon dibasic acid obtained by dimerizing oleic acid, linoleic acid, linolenic acid, and other unsaturated fatty acids with carbon number 18, depending on the degree of purification It contains any amount of monomeric acid (18 carbon atoms), trimer acid (54 carbon atoms), and other polymerized fatty acids with 20 to 54 carbon atoms. In addition, the double bond remains after the dimerization reaction. However, in the present invention, the dimer acid also includes a compound that further undergoes a hydrogenation reaction to reduce the degree of unsaturation. Dimer diamine can be defined as a diamine obtained by substituting a terminal carboxylic acid group of a dibasic acid compound having a carbon number in the range of 18-54, preferably in the range of 22-44, with a primary aminomethyl group or an amino group Compound.

作為二聚物二胺的特徵,可賦予源自二聚酸的骨架的特性。即,二聚物二胺為分子量約560~620的大分子的脂肪族,因此可增大分子的莫耳體積,並相對減少DDA系聚醯亞胺的極性基。認為此種二聚酸型二胺的特徵有助於抑制DDA系聚醯亞胺的耐熱性的降低,並且減小介電常數與介電損耗正切而提高介電特性。另外,由於包含兩個自由移動的碳數7~9的疏水鏈、與具有接近碳數18的長度的兩個鏈狀脂肪族氨基,因此不僅可對DDA系聚醯亞胺賦予柔軟性,而且也可將DDA系聚醯亞胺設為非對稱性化學結構或非平面性化學結構,因此認為可實現低介電常數化。As a characteristic of the dimer diamine, the characteristic derived from the skeleton of the dimer acid can be imparted. That is, the dimer diamine is an aliphatic macromolecule with a molecular weight of about 560 to 620, so the molar volume of the molecule can be increased, and the polar group of the DDA-based polyimide can be relatively reduced. It is believed that the characteristics of such dimer acid-type diamines contribute to suppressing the decrease in the heat resistance of the DDA-based polyimide, and reducing the dielectric constant and the dielectric loss tangent to improve the dielectric properties. In addition, since it contains two freely movable hydrophobic chains with 7-9 carbons and two chain aliphatic amino groups with a length close to 18 carbons, it can not only impart flexibility to the DDA-based polyimide, but also The DDA-based polyimide can also be made into an asymmetric chemical structure or a non-planar chemical structure, so it is considered that a low dielectric constant can be achieved.

本發明中所使用的二聚物二胺優選為出於減少二聚物二胺以外的成分的目的進行精製。作為精製方法,並無特別限制,但適宜的是蒸餾法或沉澱精製等公知的方法。精製前的二聚物二胺能以市售品來獲取,例如可列舉:日本禾大(Croda Japan)公司製造的普利阿敏(PRIAMINE)1073(商品名)、日本禾大(Croda Japan)公司製造的普利阿敏(PRIAMINE)1074(商品名)、日本禾大(Croda Japan)公司製造的普利阿敏(PRIAMINE)1075(商品名)等。The dimer diamine used in the present invention is preferably purified for the purpose of reducing components other than the dimer diamine. The purification method is not particularly limited, but well-known methods such as distillation and precipitation purification are suitable. The dimer diamine before refining can be obtained as a commercially available product. Examples include: PRIAMINE 1073 (trade name) manufactured by Croda Japan, and Croda Japan. PRIAMINE 1074 (trade name) manufactured by the company, PRIAMINE 1075 (trade name) manufactured by Croda Japan, etc.

作為DDA系聚醯亞胺中所使用的二聚物二胺以外的二胺化合物,可列舉芳香族二胺化合物、脂肪族二胺化合物。作為它們的具體例,可列舉:1,4-二氨基苯(p-PDA(p-phenylenediamine);對苯二胺)、2,2'-二甲基-4,4'-二氨基聯苯(2,2'-dimethyl-4,4'-diamino biphenyl,m-TB)、2,2'-正丙基-4,4'-二氨基聯苯(2,2'-n-propyl-4,4'-diamino biphenyl,m-NPB)、4-氨基苯基-4'-氨基苯甲酸酯(4-amino phenyl-4'-amino benzoate,APAB)、2,2-雙-[4-(3-氨基苯氧基)苯基]丙烷、雙[4-(3-氨基苯氧基)苯基]碸、雙[4-(3-氨基苯氧基)]聯苯、雙[1-(3-氨基苯氧基)]聯苯、雙[4-(3-氨基苯氧基)苯基]甲烷、雙[4-(3-氨基苯氧基)苯基]醚、雙[4-(3-氨基苯氧基)]二苯甲酮、9,9-雙[4-(3-氨基苯氧基)苯基]茀、2,2-雙-[4-(4-氨基苯氧基)苯基]六氟丙烷、2,2-雙-[4-(3-氨基苯氧基)苯基]六氟丙烷、3,3'-二甲基-4,4'-二氨基聯苯、4,4'-亞甲基二-鄰甲苯胺、4,4'-亞甲基二-2,6-二甲苯胺、4,4'-亞甲基-2,6-二乙基苯胺、3,3'-二氨基二苯基乙烷、3,3'-二氨基聯苯、3,3'-二甲氧基聯苯胺、3,3''-二氨基-對三聯苯、4,4'-[1,4-伸苯基雙(1-甲基亞乙基)]雙苯胺、4,4'-[1,3-伸苯基雙(1-甲基亞乙基)]雙苯胺、雙(對氨基環己基)甲烷、雙(對-β-氨基-第三丁基苯基)醚、雙(對-β-甲基-δ-氨基戊基)苯、對雙(2-甲基-4-氨基戊基)苯、對雙(1,1-二甲基-5-氨基戊基)苯、1,5-二氨基萘、2,6-二氨基萘、2,4-雙(β-氨基-第三丁基)甲苯、2,4-二氨基甲苯、間二甲苯-2,5-二胺、對二甲苯-2,5-二胺、間苯二甲胺、對苯二甲胺、2,6-二氨基吡啶、2,5-二氨基吡啶、2,5-二氨基-1,3,4-惡二唑、呱嗪、2'-甲氧基-4,4'-二氨基苯甲醯苯胺、4,4'-二氨基苯甲醯苯胺、1,3-雙[2-(4-氨基苯基)-2-丙基]苯、6-氨基-2-(4-氨基苯氧基)苯並惡唑、1,3-雙(3-氨基苯氧基)苯等二胺化合物。Examples of diamine compounds other than the dimer diamine used in the DDA-based polyimide include aromatic diamine compounds and aliphatic diamine compounds. Specific examples of these include: 1,4-diaminobenzene (p-PDA (p-phenylenediamine); p-phenylenediamine), 2,2'-dimethyl-4,4'-diaminobiphenyl (2,2'-dimethyl-4,4'-diamino biphenyl, m-TB), 2,2'-n-propyl-4,4'-diamino biphenyl (2,2'-n-propyl-4 ,4'-diamino biphenyl, m-NPB), 4-amino phenyl-4'-amino benzoate (APAB), 2,2-bis-[4- (3-Aminophenoxy)phenyl]propane, bis[4-(3-aminophenoxy)phenyl]sulfonate, bis[4-(3-aminophenoxy)]biphenyl, bis[1- (3-aminophenoxy)]biphenyl, bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]ether, bis[4- (3-Aminophenoxy)]benzophenone, 9,9-bis[4-(3-aminophenoxy)phenyl]sulfuron, 2,2-bis-[4-(4-aminophenoxy) Yl)phenyl]hexafluoropropane, 2,2-bis-[4-(3-aminophenoxy)phenyl]hexafluoropropane, 3,3'-dimethyl-4,4'-diamino Benzene, 4,4'-methylenebis-o-toluidine, 4,4'-methylenebis-2,6-xylidine, 4,4'-methylene-2,6-diethyl Aniline, 3,3'-diaminodiphenylethane, 3,3'-diaminodiphenyl, 3,3'-dimethoxybenzidine, 3,3''-diamino-p-terphenyl, 4,4'-[1,4-phenylenebis(1-methylethylene)]bisaniline, 4,4'-[1,3-phenylenebis(1-methylethylene) ]Bisaniline, bis(p-aminocyclohexyl)methane, bis(p-β-amino-tert-butylphenyl) ether, bis(p-β-methyl-δ-aminopentyl)benzene, p-bis( 2-Methyl-4-aminopentyl)benzene, p-bis(1,1-dimethyl-5-aminopentyl)benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2, 4-bis(β-amino-tertiary butyl) toluene, 2,4-diaminotoluene, meta-xylene-2,5-diamine, para-xylene-2,5-diamine, meta-xylylenediamine , P-xylylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine, 2'-methoxy- 4,4'-diaminobenzaniline, 4,4'-diaminobenzaniline, 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene, 6-amino Diamine compounds such as -2-(4-aminophenoxy)benzoxazole and 1,3-bis(3-aminophenoxy)benzene.

DDA系聚醯亞胺可通過如下方式來製造:使所述酸酐成分與二胺成分在溶媒中反應,生成聚醯胺酸後進行加熱閉環。例如,使酸酐成分與二胺成分以大致等莫耳溶解於有機溶媒中,在0℃~100℃的範圍內的溫度下攪拌30分鐘~24小時來進行聚合反應,藉此可獲得作為聚醯亞胺的前體的聚醯胺酸。在反應時,以使所生成的前體在有機溶媒中成為5重量%~50重量%的範圍內、優選為10重量%~40重量%的範圍內的方式溶解反應成分。作為聚合反應中所使用的有機溶媒,例如可列舉:N,N-二甲基甲醯胺(N,N-dimethylformamide,DMF)、N,N-二甲基乙醯胺(N,N-dimethyl acetamide,DMAc)、N,N-二乙基乙醯胺、N-甲基-2-吡咯啶酮(N-methyl-2-pyrrolidone,NMP)、2-丁酮、二甲基亞碸(dimethylsulfoxide,DMSO)、六甲基磷醯胺、N-甲基己內醯胺、硫酸二甲酯、環己酮、甲基環己烷、二惡烷、四氫呋喃、二乙二醇二甲醚(diglyme)、三乙二醇二甲醚(triglyme)、甲醇、乙醇、苄醇、甲酚等。也可將這些溶媒併用兩種以上來使用,進而也能併用二甲苯、甲苯之類的芳香族烴。另外,作為此種有機溶媒的使用量,並無特別限制,優選為調整為通過聚合反應而獲得的聚醯胺酸溶液的濃度成為5重量%~50重量%左右的使用量來使用。The DDA-based polyimide can be produced by reacting the acid anhydride component and the diamine component in a solvent to produce polyamide acid and then heating the ring to close it. For example, the acid anhydride component and the diamine component are dissolved in an organic solvent at approximately equal moles and stirred at a temperature in the range of 0°C to 100°C for 30 minutes to 24 hours to carry out the polymerization reaction, thereby obtaining a polyamide Polyamide acid which is the precursor of imine. At the time of the reaction, the reaction component is dissolved so that the produced precursor is in the range of 5% by weight to 50% by weight, preferably in the range of 10% by weight to 40% by weight, in the organic solvent. As the organic solvent used in the polymerization reaction, for example, N,N-dimethylformamide (N,N-dimethylformamide, DMF), N,N-dimethylformamide (N,N-dimethylformamide, acetamide, DMAc), N,N-diethyl acetamide, N-methyl-2-pyrrolidone (N-methyl-2-pyrrolidone, NMP), 2-butanone, dimethylsulfoxide (dimethylsulfoxide) , DMSO), hexamethylphosphamide, N-methylcaprolactam, dimethyl sulfate, cyclohexanone, methylcyclohexane, dioxane, tetrahydrofuran, diethylene glycol dimethyl ether (diglyme ), triethylene glycol dimethyl ether (triglyme), methanol, ethanol, benzyl alcohol, cresol, etc. These solvents may be used in combination of two or more types, and aromatic hydrocarbons such as xylene and toluene may also be used in combination. In addition, the amount of such an organic solvent used is not particularly limited, but it is preferably adjusted so that the concentration of the polyamide acid solution obtained by the polymerization reaction becomes about 5% by weight to 50% by weight.

所合成的聚醯胺酸有利的是通常用作反應溶媒溶液,視需要可進行濃縮、稀釋或置換為其他有機溶媒。另外,聚醯胺酸通常溶媒可溶性優異,因此有利地使用。聚醯胺酸的溶液的黏度優選為500 mPa·s~100000 mPa·s的範圍內。若偏離所述範圍,則在利用塗布機等進行塗敷作業時容易在膜中產生厚度不均、條紋等不良。The synthesized polyamide acid is advantageously generally used as a reaction solvent solution, and can be concentrated, diluted or replaced with other organic solvents as necessary. In addition, polyamide acid is generally excellent in solvent solubility, and therefore is advantageously used. The viscosity of the polyamide acid solution is preferably in the range of 500 mPa·s to 100,000 mPa·s. If it deviates from the above range, defects such as thickness unevenness and streaks are likely to occur in the film during coating work using a coater or the like.

使聚醯胺酸進行醯亞胺化而形成聚醯亞胺的方法並無特別限制,例如可適宜地採用在所述溶媒中以80℃~400℃的範圍內的溫度條件歷時1小時~24小時進行加熱等熱處理。另外,關於溫度,可在固定的溫度條件下進行加熱,也可在步驟的中途改變溫度。There is no particular limitation on the method of imidizing polyamide acid to form polyimide. For example, a temperature condition in the range of 80°C to 400°C in the solvent can be suitably used for 1 hour to 24 hours. Heat treatment such as heating for hours. In addition, regarding the temperature, heating may be performed under a fixed temperature condition, or the temperature may be changed in the middle of the step.

通過在DDA系聚醯亞胺中選定所述酸酐成分及二胺成分的種類、或應用兩種以上的酸酐成分或二胺成分時的各自的莫耳比,可控制介電特性、熱膨脹係數、拉伸彈性係數、玻璃化轉變溫度等。另外,當在DDA系聚醯亞胺中具有多個聚醯亞胺的結構單元時,可以嵌段的形式存在,也可無規地存在,但優選為無規地存在。By selecting the type of the acid anhydride component and diamine component in the DDA-based polyimide, or using the respective molar ratios of two or more acid anhydride components or diamine components, it is possible to control the dielectric properties, the coefficient of thermal expansion, Tensile coefficient of elasticity, glass transition temperature, etc. In addition, when there are a plurality of polyimine structural units in the DDA-based polyimine, it may exist in the form of a block or may exist randomly, but it is preferably present randomly.

DDA系聚醯亞胺的重量平均分子量例如優選為10,000~200,000的範圍內,若為此種範圍內,則容易控制聚醯亞胺的重量平均分子量。另外,例如在用作FPC用的黏接劑的情況下,DDA系聚醯亞胺的重量平均分子量更優選為20,000~150,000的範圍內,進而優選為40,000~150,000的範圍內。在用作FPC用的黏接劑的情況下,當DDA系聚醯亞胺的重量平均分子量未滿20,000時,存在耐流動性惡化的傾向。另一方面,若DDA系聚醯亞胺的重量平均分子量超過150,000,則存在黏度過度增加而不溶於溶劑,在塗敷作業時容易產生黏接劑層的厚度不均、條紋等不良的傾向。The weight average molecular weight of the DDA-based polyimine is, for example, preferably in the range of 10,000 to 200,000, and if it is within such a range, the weight average molecular weight of the polyimide can be easily controlled. In addition, when used as an adhesive for FPC, for example, the weight average molecular weight of the DDA-based polyimide is more preferably in the range of 20,000 to 150,000, and still more preferably in the range of 40,000 to 150,000. When used as an adhesive for FPC, when the weight average molecular weight of the DDA-based polyimide is less than 20,000, the flow resistance tends to deteriorate. On the other hand, if the weight average molecular weight of the DDA-based polyimide exceeds 150,000, the viscosity increases excessively and becomes insoluble in solvents, and defects such as uneven thickness of the adhesive layer and streaks tend to occur during the coating operation.

DDA系聚醯亞胺的醯亞胺基濃度以優選為22重量%以下、更優選為20重量%以下為宜。此處,「醯亞胺基濃度」是指將聚醯亞胺中的醯亞胺基部(-(CO)2 -N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過22重量%,則樹脂自身的分子量變小,並且因極性基的增加而低吸濕性也惡化,Tg及彈性係數上升。The concentration of the imine group of the DDA-based polyimide is preferably 22% by weight or less, and more preferably 20% by weight or less. Here, the "imine group concentration" refers to the value obtained by dividing the molecular weight of the polyimine group (-(CO) 2 -N-) by the molecular weight of the entire structure of the polyimide . If the concentration of the imine group exceeds 22% by weight, the molecular weight of the resin itself becomes small, and the low hygroscopicity is also deteriorated due to the increase of the polar group, and the Tg and elastic coefficient increase.

DDA系聚醯亞胺最優選為完全經醯亞胺化的結構。但是,聚醯亞胺的一部分也可成為醯胺酸。所述醯亞胺化率可通過使用傅立葉變換紅外分光光度計(市售品:日本分光製造的FT/IR620),並利用一次反射衰減全反射(Attenuated Total Reflection,ATR)法對聚醯亞胺薄膜的紅外線吸收光譜進行測定,以1015 cm-1 附近的苯環吸收體為基準,根據1780 cm-1 的源自醯亞胺基的C=O伸縮的吸光度而算出。The DDA-based polyimide is most preferably a structure that is completely imidized. However, a part of polyimide may also become amide acid. The imidization rate can be measured by using a Fourier transform infrared spectrophotometer (commercially available product: FT/IR620 manufactured by JASCO Corporation), and using the Attenuated Total Reflection (ATR) method to measure polyimide The infrared absorption spectrum of the film was measured, and it was calculated based on the absorbance of C=O stretched and stretched at 1780 cm -1 derived from the amide group based on the benzene ring absorber in the vicinity of 1015 cm -1.

在DDA系聚醯亞胺中可適宜調配例如塑化劑、環氧樹脂等其他硬化樹脂成分、硬化劑、硬化促進劑、無機填料、偶合劑、填充劑、溶劑、阻燃劑等作為任意成分。In the DDA-based polyimide, other hardening resin components such as plasticizers, epoxy resins, hardeners, hardening accelerators, inorganic fillers, coupling agents, fillers, solvents, flame retardants, etc. can be suitably formulated as optional components. .

[DDA系聚醯亞胺的交聯形成] 在DDA系聚醯亞胺具有酮基的情況下,使所述酮基、與具有至少兩個一級氨基作為官能基的氨基化合物(以下,有時記作「交聯形成用氨基化合物」)的氨基反應而形成C=N鍵,藉此可形成交聯結構。通過形成交聯結構,可提高DDA系聚醯亞胺的耐熱性。作為為了形成具有酮基的DDA系聚醯亞胺而優選的四羧酸酐,例如可列舉3,3',4,4'-二苯甲酮四羧酸二酐(BTDA),作為二胺化合物,例如可列舉4,4'-雙(3-氨基苯氧基)二苯甲酮(4,4'-bis(3-aminophenoxy)benzophenone,BABP)、1,3-雙[4-(3-氨基苯氧基)苯甲醯基]苯(1,3-bis[4-(3-aminophenoxy)benzoyl]benzene,BABB)等芳香族二胺。[Crosslink formation of DDA series polyimine] When the DDA-based polyimide has a ketone group, the ketone group is combined with an amino compound having at least two primary amino groups as functional groups (hereinafter, sometimes referred to as "amino compound for crosslinking formation") The amino group reacts to form a C=N bond, thereby forming a cross-linked structure. By forming a cross-linked structure, the heat resistance of the DDA-based polyimide can be improved. As a tetracarboxylic anhydride that is preferable for forming a DDA-based polyimide having a ketone group, for example, 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA) can be cited as a diamine compound For example, 4,4'-bis(3-aminophenoxy)benzophenone (4,4'-bis(3-aminophenoxy)benzophenone, BABP), 1,3-bis[4-(3- Aromatic diamines such as 1,3-bis[4-(3-aminophenoxy)benzoyl]benzene (BABB), etc.

在形成交聯結構的目的中,特優選為包含所述DDA系聚醯亞胺及交聯形成用氨基化合物,所述DDA系聚醯亞胺相對於全部四羧酸殘基而含有優選為50莫耳%以上、更優選為60莫耳%以上的由BTDA衍生的BTDA殘基。再者,在本發明中,所謂「BTDA殘基」,是指由BTDA衍生的四價基。For the purpose of forming a cross-linked structure, it is particularly preferable to include the DDA-based polyimine and an amino compound for cross-linking formation, and the DDA-based polyimine contains preferably 50% relative to all tetracarboxylic acid residues. Mole% or more, more preferably 60 mole% or more of BTDA residues derived from BTDA. Furthermore, in the present invention, the so-called "BTDA residue" refers to a tetravalent group derived from BTDA.

作為交聯形成用氨基化合物,可例示:(I)二醯肼化合物、(II)芳香族二胺、(III)脂肪族胺等。這些中,優選為二醯肼化合物。二醯肼化合物以外的脂肪族胺即便在室溫下也容易形成交聯結構,清漆的保存穩定性存在擔憂,另一方面,芳香族二胺為了形成交聯結構而需要設為高溫。如上所述,在使用二醯肼化合物的情況下,可使清漆的保存穩定性與硬化時間的縮短化並存。作為二醯肼化合物,例如優選為乙二酸二醯肼、丙二酸二醯肼、琥珀酸二醯肼、戊二酸二醯肼、己二酸二醯肼、庚二酸二醯肼、辛二酸二醯肼、壬二酸二醯肼、癸二酸二醯肼、十二烷二酸二醯肼、馬來酸二醯肼、富馬酸二醯肼、二甘醇酸二醯肼、酒石酸二醯肼、蘋果酸二醯肼、鄰苯二甲酸二醯肼、間苯二甲酸二醯肼、對苯二甲酸二醯肼、2,6-萘甲酸二醯肼、4,4-雙苯二醯肼、1,4-萘甲酸二醯肼、2,6-吡啶二酸二醯肼、衣康酸二醯肼等二醯肼化合物。以上的二醯肼化合物可單獨使用,也可將兩種以上混合使用。As an amino compound for crosslinking formation, (I) a dihydrazine compound, (II) aromatic diamine, (III) aliphatic amine, etc. can be illustrated. Among these, dihydrazine compounds are preferred. Aliphatic amines other than the dihydrazine compound tend to form a crosslinked structure even at room temperature, and there is a concern about the storage stability of the varnish. On the other hand, the aromatic diamine needs to be set to a high temperature in order to form a crosslinked structure. As described above, when the dihydrazine compound is used, the storage stability of the varnish and the shortening of the curing time can be coexisted. As the dihydrazine compound, for example, dihydrazine oxalate, dihydrazine malonate, dihydrazine succinate, dihydrazine glutarate, dihydrazine adipate, dihydrazine pimelate, Dihydrazine suberate, dihydrazine azelate, dihydrazine sebacate, dihydrazine dodecanedioate, dihydrazine maleate, dihydrazine fumarate, diglycolic acid dihydrazide Hydrazine, dihydrazine tartrate, dihydrazine malate, dihydrazine phthalate, dihydrazine isophthalate, dihydrazine terephthalate, dihydrazine 2,6-naphthoate, 4,4 -Diphenyldihydrazine, 1,4-naphthoic acid dihydrazine, 2,6-pyridine diacid dihydrazine, itaconic acid dihydrazine and other dihydrazine compounds. The above dihydrazine compounds may be used alone, or two or more of them may be mixed and used.

另外,所述(I)二醯肼化合物、(II)芳香族二胺、(III)脂肪族胺等氨基化合物例如也可如(I)與(II)的組合、(I)與(III)的組合、(I)與(II)及(III)的組合那樣,超範疇將兩種以上組合使用。In addition, the amino compounds such as (I) dihydrazine compounds, (II) aromatic diamines, (III) aliphatic amines, etc. may also be, for example, combinations of (I) and (II), (I) and (III) The combination of (I), (II) and (III), the super category uses two or more combinations.

另外,就使通過利用交聯形成用氨基化合物的交聯而形成的網狀結構更密的觀點而言,本發明中所使用的交聯形成用氨基化合物的分子量(在交聯形成用氨基化合物為寡聚物的情況下為重量平均分子量)優選為5,000以下,並以更優選為90~2,000、進而優選為100~1,500為宜。其中,特優選為具有100~1,000的分子量的交聯形成用氨基化合物。若交聯形成用氨基化合物的分子量未滿90,則交聯形成用氨基化合物的一個氨基限於與DDA系聚醯亞胺的酮基形成C=N鍵,剩餘的氨基的周邊立體地體積變大,因此存在剩餘的氨基不易形成C=N鍵的傾向。In addition, from the viewpoint of making the network structure formed by crosslinking with the crosslinking amino compound denser, the molecular weight of the crosslinking amino compound used in the present invention (in the crosslinking amino compound In the case of an oligomer, the weight average molecular weight) is preferably 5,000 or less, and more preferably 90 to 2,000, and still more preferably 100 to 1,500. Among them, particularly preferred is an amino compound for crosslinking formation having a molecular weight of 100 to 1,000. If the molecular weight of the cross-linking amino compound is less than 90, one amino group of the cross-linking amino compound is limited to forming a C=N bond with the ketone group of the DDA-based polyimide, and the surrounding area of the remaining amino group becomes three-dimensionally bulky , So there is a tendency that the remaining amino groups are not easy to form C=N bonds.

在使DDA系聚醯亞胺中的酮基與交聯形成用氨基化合物進行交聯形成的情況下,向包含DDA系聚醯亞胺的樹脂溶液中加入所述交聯形成用氨基化合物,使DDA系聚醯亞胺中的酮基與交聯形成用氨基化合物的一級氨基進行縮合反應。通過所述縮合反應,樹脂溶液進行硬化而成為硬化物。在所述情況下,關於交聯形成用氨基化合物的添加量,可設為一級氨基相對於酮基1莫耳而合計為0.004莫耳~1.5莫耳、優選為0.005莫耳~1.2莫耳、更優選為0.03莫耳~0.9莫耳、最優選為0.04莫耳~0.6莫耳。關於一級氨基相對於酮基1莫耳而合計未滿0.004莫耳之類的交聯形成用氨基化合物的添加量,由於利用交聯形成用氨基化合物的交聯不充分,因此存在難以表現出硬化後的耐熱性的傾向,若交聯形成用氨基化合物的添加量超過1.5莫耳,則未反應的交聯形成用氨基化合物作為熱塑劑發揮作用,存在使作為黏接劑層的耐熱性降低的傾向。In the case of cross-linking the ketone group in the DDA-based polyimide with the cross-linking amino compound, the cross-linking-forming amino compound is added to the resin solution containing the DDA-based polyimide to make The ketone group in the DDA-based polyimide undergoes a condensation reaction with the primary amino group of the crosslinking amino compound. Through the condensation reaction, the resin solution is cured to become a cured product. In this case, the addition amount of the amino compound for crosslinking can be set to a total of 0.004 mol to 1.5 mol, preferably 0.005 mol to 1.2 mol, based on 1 mol of the ketone group. It is more preferably 0.03 mol to 0.9 mol, most preferably 0.04 mol to 0.6 mol. Regarding the addition amount of the cross-linking amino compound such as 1 mol of the ketone group and less than 0.004 mol in total, the cross-linking by the cross-linking amino compound is insufficient, so it is difficult to exhibit hardening. After the tendency of heat resistance, if the addition amount of the amino compound for crosslinking exceeds 1.5 mol, the unreacted amino compound for crosslinking acts as a thermoplastic agent, which may reduce the heat resistance of the adhesive layer. Propensity.

用以進行交聯形成的縮合反應的條件若為DDA系聚醯亞胺中的酮基與所述交聯形成用氨基化合物的一級氨基進行反應而形成亞胺鍵(C=N鍵)的條件,則並無特別限制。關於加熱縮合的溫度,出於將通過縮合而生成的水放出至系統外、或在DDA系聚醯亞胺的合成後繼而進行加熱縮合反應的情況下使所述縮合步驟簡化等理由,例如優選為120℃~220℃的範圍內,更優選為140℃~200℃的範圍內。反應時間優選為30分鐘~24小時左右。反應的終點例如可通過使用傅立葉變換紅外分光光度計(市售品:日本分光製造的FT/IR620)對紅外線吸收光譜進行測定,並利用1670 cm-1 附近的源自聚醯亞胺樹脂中的酮基的吸收峰值減少或消失、及1635 cm-1 附近的源自亞胺基的吸收峰值出現來確認。The conditions for the condensation reaction for cross-linking formation are the conditions that the ketone group in the DDA-based polyimide reacts with the primary amino group of the amino compound for cross-linking formation to form an imine bond (C=N bond) , There are no special restrictions. Regarding the heating condensation temperature, it is preferable to release the water produced by condensation to the outside of the system, or to simplify the condensation step when the heating condensation reaction is performed after the synthesis of the DDA-based polyimide. For example, it is preferable It is within the range of 120°C to 220°C, more preferably within the range of 140°C to 200°C. The reaction time is preferably about 30 minutes to 24 hours. The end point of the reaction can be measured, for example, by using a Fourier transform infrared spectrophotometer (commercial product: FT/IR620 manufactured by JASCO Corporation) to measure the infrared absorption spectrum, and using the polyimide resin in the vicinity of 1670 cm -1 It was confirmed that the absorption peak of the ketone group decreased or disappeared, and the absorption peak derived from the imine group near 1635 cm -1 appeared.

DDA系聚醯亞胺的酮基與所述交聯形成用氨基化合物的一級氨基的加熱縮合例如可利用如下方法等進行: (1)緊接著DDA系聚醯亞胺的合成(醯亞胺化)而添加交聯形成用氨基化合物並進行加熱的方法; (2)預先投入過量的氨基化合物作為二胺成分,緊接著DDA系聚醯亞胺的合成(醯亞胺化),而將不參與醯亞胺化或醯胺化的剩餘的氨基化合物用作交聯形成用氨基化合物並與DDA系聚醯亞胺一起加熱的方法; 或者 (3)將添加有所述交聯形成用氨基化合物的DDA系聚醯亞胺的組成物加工為規定的形狀後(例如,在塗布於任意的基材上後或形成為膜狀後)進行加熱的方法。The heating condensation of the ketone group of the DDA-based polyimide and the primary amino group of the amino compound for crosslinking can be carried out, for example, by the following method: (1) Immediately after the synthesis of the DDA-based polyimide (imination), an amino compound for crosslinking is added and heated; (2) Preliminarily put an excessive amount of amino compound as the diamine component, followed by the synthesis of DDA-based polyimid (imidation), and use the remaining amino compound that does not participate in imidization or amidation as A method of forming an amino compound for cross-linking and heating together with DDA-based polyimide; or (3) After processing the DDA-based polyimide composition to which the amino compound for crosslinking is added into a predetermined shape (for example, after coating on any substrate or after forming into a film) Method of heating.

為了對DDA系聚醯亞胺賦予耐熱性,在交聯結構的形成中說明了亞胺鍵的形成,但並不限定於此,作為聚醯亞胺的硬化方法,例如也能調配環氧樹脂、環氧樹脂硬化劑、馬來醯亞胺或活性化酯樹脂或具有苯乙烯骨架的樹脂等具有不飽和鍵的化合物等來進行硬化。In order to impart heat resistance to the DDA-based polyimide, the formation of the imine bond is described in the formation of the cross-linked structure, but it is not limited to this. As a curing method of the polyimide, for example, epoxy resin can also be formulated , Epoxy resin curing agent, maleimide, activated ester resin, or resin with styrene skeleton, and other compounds having unsaturated bonds.

[尺寸精度維持層] 關於尺寸精度維持層PL,為了維持覆金屬層疊板10的機械強度,100℃至250℃的溫度區域內的儲存彈性係數的最小值優選為1.0 GPa~8.0 GPa的範圍內,更優選為2.0 GPa~6.0 GPa的範圍內。若尺寸精度維持層PL的儲存彈性係數的最小值未滿1.0 GPa,則無法獲得充分的機械強度與電路加工後的尺寸精度。在儲存彈性係數的最小值超過8.0 GPa的情況下,層疊壓制時容易產生翹曲。[Dimensional accuracy maintenance layer] Regarding the dimensional accuracy maintaining layer PL, in order to maintain the mechanical strength of the metal-clad laminate 10, the minimum value of the storage elastic coefficient in the temperature range of 100°C to 250°C is preferably in the range of 1.0 GPa to 8.0 GPa, more preferably 2.0 GPa ~6.0 GPa. If the minimum value of the storage elastic coefficient of the dimensional accuracy maintaining layer PL is less than 1.0 GPa, sufficient mechanical strength and dimensional accuracy after circuit processing cannot be obtained. When the minimum value of the storage elasticity coefficient exceeds 8.0 GPa, warping is likely to occur during lamination pressing.

另外,關於尺寸精度維持層PL,為了維持對覆金屬層疊板10進行電路加工時的尺寸精度,熱膨脹係數(Coefficient Of Thermal Expansion,CTE)優選為15 ppm/K~25 ppm/K的範圍內,更優選為16 ppm/K~23 ppm/K的範圍內。若尺寸精度維持層PL的CTE未滿15 ppm/K,則覆金屬層疊板10容易產生翹曲,若超過25 ppm/K,則無法獲得電路加工後的尺寸精度。In addition, regarding the dimensional accuracy maintaining layer PL, in order to maintain the dimensional accuracy during circuit processing of the metal-clad laminate 10, the coefficient of thermal expansion (CTE) is preferably in the range of 15 ppm/K to 25 ppm/K. It is more preferably in the range of 16 ppm/K to 23 ppm/K. If the CTE of the dimensional accuracy maintaining layer PL is less than 15 ppm/K, the metal-clad laminate 10 is likely to warp, and if it exceeds 25 ppm/K, the dimensional accuracy after circuit processing cannot be obtained.

尺寸精度維持層PL若包含具有電絕緣性的樹脂,則並無特別限定,例如可列舉聚醯亞胺、環氧樹脂、酚樹脂、聚乙烯、聚丙烯、聚四氟乙烯、矽酮、乙烯四氟乙烯(Ethylene tetrafluoroethylene,ETFE)等,優選為包含聚醯亞胺。即,尺寸精度維持層PL優選為單層或包含多層的低熱膨脹性聚醯亞胺層。The dimensional accuracy maintaining layer PL is not particularly limited as long as it contains a resin with electrical insulation. Examples include polyimide, epoxy resin, phenol resin, polyethylene, polypropylene, polytetrafluoroethylene, silicone, and vinyl. It is preferable that tetrafluoroethylene (Ethylene tetrafluoroethylene, ETFE) etc. contain polyimide. That is, the dimensional accuracy maintaining layer PL is preferably a single layer or a low thermal expansion polyimide layer composed of multiple layers.

在尺寸精度維持層PL為單層的聚醯亞胺層的情況下,可設為與後述的非熱塑性聚醯亞胺層31相同的結構。作為單層的聚醯亞胺層,例如可使用卡普頓(Kapton)EN(商品名;東麗杜邦(Toray dupont)公司製造)、阿皮卡魯(Apical)NPI(商品名;鐘淵(KANEKA)公司製)等市售品。When the dimensional accuracy maintaining layer PL is a single-layer polyimide layer, it can have the same structure as the non-thermoplastic polyimide layer 31 described later. As a single-layer polyimide layer, for example, Kapton EN (trade name; manufactured by Toray dupont), Apical NPI (trade name; KANEKA ) Company system) and other commercially available products.

在尺寸精度維持層PL包含多層聚醯亞胺層的情況下,如圖4所示,尺寸精度維持層PL例如可為在包含非熱塑性聚醯亞胺作為樹脂成分的非熱塑性聚醯亞胺層31的兩側層疊包含熱塑性聚醯亞胺作為樹脂成分的熱塑性聚醯亞胺層33而成的結構。再者,所謂「非熱塑性聚醯亞胺」,通常為即便加熱也不顯示出軟化、黏接性的聚醯亞胺,但本發明中是指使用動態黏彈性測定裝置(動態熱機械分析儀(Dynamic thermomechanical analyzer,DMA))所測定的、30℃下的儲存彈性係數為1.0×109 Pa以上且350℃下的儲存彈性係數為1.0×108 Pa以上的聚醯亞胺。另外,所謂「熱塑性聚醯亞胺」,通常為可明確地確認到玻璃化轉變溫度(Tg)的聚醯亞胺,但本發明中是指使用DMA所測定的、30℃下的儲存彈性係數為1.0×109 Pa以上且350℃下的儲存彈性係數未滿1.0×108 Pa的聚醯亞胺。In the case where the dimensional accuracy maintaining layer PL includes multiple polyimide layers, as shown in FIG. 4, the dimensional accuracy maintaining layer PL may be, for example, a non-thermoplastic polyimide layer containing non-thermoplastic polyimide as a resin component. A structure in which a thermoplastic polyimide layer 33 containing a thermoplastic polyimide as a resin component is laminated on both sides of 31. Furthermore, the so-called "non-thermoplastic polyimide" is usually a polyimide that does not show softening and adhesiveness even when heated, but in the present invention, it refers to the use of a dynamic viscoelasticity measuring device (dynamic thermomechanical analyzer). (Dynamic thermomechanical analyzer, DMA)) measured, the storage modulus at 30 deg.] C is 1.0 × 10 9 Pa or more and a storage modulus at 350 deg.] C less than 1.0 × 10 8 Pa is polyimide. In addition, the so-called "thermoplastic polyimide" is usually a polyimide whose glass transition temperature (Tg) can be clearly confirmed, but in the present invention, it refers to the storage elasticity coefficient at 30°C measured using DMA It is a polyimide with 1.0×10 9 Pa or more and a storage elastic modulus at 350°C of less than 1.0×10 8 Pa.

繼而,對用以構成尺寸精度維持層PL的非熱塑性聚醯亞胺層31及熱塑性聚醯亞胺層33的優選結構例進行說明。Next, a preferable structure example of the non-thermoplastic polyimide layer 31 and the thermoplastic polyimide layer 33 for constituting the dimensional accuracy maintaining layer PL will be described.

非熱塑性聚醯亞胺層: 構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺包含四羧酸殘基及二胺殘基。聚醯亞胺優選為包含由芳香族四羧酸二酐衍生的芳香族四羧酸殘基及由芳香族二胺衍生的芳香族二胺殘基。Non-thermoplastic polyimide layer: The non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 includes a tetracarboxylic acid residue and a diamine residue. The polyimide preferably contains an aromatic tetracarboxylic acid residue derived from an aromatic tetracarboxylic dianhydride and an aromatic diamine residue derived from an aromatic diamine.

(四羧酸殘基) 構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺優選為含有由3,3',4,4'-聯苯四羧酸二酐(BPDA)及1,4-伸苯基雙(偏苯三甲酸單酯)二酐(1,4-phenylene bis(trimellitic acid monoester)dianhydride,TAHQ)的至少一種衍生的四羧酸殘基以及由均苯四甲酸二酐(Pyromellitic dianhydride,PMDA)及2,3,6,7-萘四羧酸二酐(2,3,6,7-naphthalene tetracarboxylic dianhydride,NTCDA)的至少一種衍生的四羧酸殘基作為四羧酸殘基。(Tetracarboxylic acid residue) The non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 preferably contains 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and 1,4-phenylene bis( Trimellitic acid monoester) dianhydride (1,4-phenylene bis (trimellitic acid monoester) dianhydride, TAHQ) derived from at least one tetracarboxylic acid residue and from pyromellitic dianhydride (Pyromellitic dianhydride, PMDA) and At least one tetracarboxylic acid residue derived from 2,3,6,7-naphthalene tetracarboxylic dianhydride (NTCDA) is used as the tetracarboxylic acid residue.

由BPDA衍生的四羧酸殘基(以下,也稱為「BPDA殘基」)及由TAHQ衍生的四羧酸殘基(以下,也稱為「TAHQ殘基」)容易形成聚合物的有序結構,可通過抑制分子的運動而使介電損耗正切或吸濕性降低。BPDA殘基可賦予作為聚醯亞胺前體的聚醯胺酸的凝膠膜的自支持性,另一方面,存在使醯亞胺化後的CTE增大,並且使玻璃化轉變溫度降低並使耐熱性降低的傾向。Tetracarboxylic acid residues derived from BPDA (hereinafter, also referred to as "BPDA residues") and tetracarboxylic acid residues derived from TAHQ (hereinafter, also referred to as "TAHQ residues") easily form the order of the polymer The structure can reduce the dielectric loss tangent or hygroscopicity by inhibiting the movement of molecules. BPDA residues can impart self-supporting properties to the gel film of polyimide, which is the precursor of polyimide. On the other hand, the CTE after imidization is increased, and the glass transition temperature is lowered. The tendency to reduce heat resistance.

根據此種觀點,以構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺相對於全部四羧酸殘基的100莫耳份而在合計優選為30莫耳份以上且60莫耳份以下的範圍內、更優選為40莫耳份以上且50莫耳份以下的範圍內含有BPDA殘基及TAHQ殘基的方式進行控制。若BPDA殘基及TAHQ殘基的合計未滿30莫耳份,則聚合物的有序結構的形成變得不充分,耐吸濕性降低,或者介電損耗正切的減少變得不充分,若超過60莫耳份,則除CTE的增加或面內延遲(RO)的變化量的增大以外,還有耐熱性降低之虞。From this viewpoint, the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 is preferably 30 mol parts or more and 60 mol parts in total with respect to 100 mol parts of all tetracarboxylic acid residues. The manner in which the BPDA residue and the TAHQ residue are contained within the following range, more preferably within the range of 40 mol parts or more and 50 mol parts or less, is controlled. If the total of BPDA residues and TAHQ residues is less than 30 moles, the formation of the ordered structure of the polymer will become insufficient, the moisture resistance will decrease, or the reduction of the dielectric loss tangent will become insufficient. 60 mole parts, in addition to the increase in CTE or the increase in the amount of change in the in-plane retardation (RO), there is also a risk of a decrease in heat resistance.

另外,由均苯四甲酸二酐衍生的四羧酸殘基(以下,也稱為「PMDA殘基」)及由2,3,6,7-萘四羧酸二酐衍生的四羧酸殘基(以下,也稱為「NTCDA殘基」)由於具有剛直性,因此是提高面內配向性、將CTE抑制得低並且承擔控制面內延遲(RO)或者控制玻璃化轉變溫度的作用的殘基。另一方面,PMDA殘基由於分子量小,因此若其量變得過多,則聚合物的醯亞胺基濃度變高,極性基增加而吸濕性變大,因分子鏈內部的水分的影響而介電損耗正切增加。另外,NTCDA殘基存在因剛直性高的萘骨架而膜容易變脆且使彈性係數增大的傾向。 因此,構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺相對於全部四羧酸殘基的100莫耳份而在合計優選為40莫耳份以上且70莫耳份以下的範圍內、更優選為50莫耳份以上且60莫耳份以下的範圍內、進而優選為50莫耳份~55莫耳份的範圍內含有PMDA殘基及NTCDA殘基。若PMDA殘基及NTCDA殘基的合計未滿40莫耳份,則有CTE增加或者耐熱性降低之虞,若超過70莫耳份,則有聚合物的醯亞胺基濃度變高,極性基增加且低吸濕性受損,介電損耗正切增加之虞;或者膜變脆且膜的自支持性降低之虞。In addition, tetracarboxylic acid residues derived from pyromellitic dianhydride (hereinafter also referred to as "PMDA residues") and tetracarboxylic acid residues derived from 2,3,6,7-naphthalenetetracarboxylic dianhydride The radical (hereinafter, also referred to as "NTCDA residue") has rigidity, so it is a residue that improves in-plane alignment, suppresses CTE to a low level, and controls in-plane retardation (RO) or glass transition temperature. base. On the other hand, PMDA residues have a small molecular weight, so if the amount becomes too large, the concentration of the polymer's imine groups will increase, the polar groups will increase, and the hygroscopicity will increase. This is due to the influence of the moisture inside the molecular chain. The electrical loss tangent increases. In addition, NTCDA residues tend to become brittle and increase the elastic modulus due to the naphthalene skeleton with high rigidity. Therefore, the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer is preferably within the range of 40 mol parts or more and 70 mol parts in total with respect to 100 mol parts of all tetracarboxylic acid residues. It is more preferable that the PMDA residue and the NTCDA residue are contained in the range of 50 mol parts or more and 60 mol parts or less, and still more preferably in the range of 50 mol parts to 55 mol parts. If the total of PMDA residues and NTCDA residues is less than 40 mol parts, the CTE may increase or the heat resistance may decrease. If it exceeds 70 mol parts, the concentration of the polymer's imine groups may increase and the polar groups may increase. Increased and low hygroscopicity is impaired, and the dielectric loss tangent may increase; or the film may become brittle and the self-supporting property of the film may decrease.

另外,以BPDA殘基及TAHQ殘基的至少一種以及PMDA殘基及NTCDA殘基的至少一種的合計相對於全部四羧酸殘基的100莫耳份而為80莫耳份以上、優選為90莫耳份以上為宜。In addition, the total of at least one of BPDA residues and TAHQ residues and at least one of PMDA residues and NTCDA residues is 80 mol parts or more, preferably 90 mol parts relative to 100 mol parts of all tetracarboxylic acid residues. More than mol portion is suitable.

另外,以將BPDA殘基及TAHQ殘基的至少一種、與PMDA殘基及NTCDA殘基的至少一種的莫耳比{(BPDA殘基+TAHQ殘基)/(PMDA殘基+NTCDA殘基)}設為0.4以上且1.5以下的範圍內、優選為0.6以上且1.3以下的範圍內、更優選為0.8以上且1.2以下的範圍內,來控制CTE與聚合物的有序結構的形成為宜。In addition, the molar ratio of at least one of BPDA residues and TAHQ residues to at least one of PMDA residues and NTCDA residues {(BPDA residues + TAHQ residues)/(PMDA residues + NTCDA residues) } It is preferably in the range of 0.4 or more and 1.5 or less, preferably in the range of 0.6 or more and 1.3 or less, more preferably in the range of 0.8 or more and 1.2 or less, to control the formation of an ordered structure of CTE and the polymer.

PMDA及NTCDA由於具有剛直骨架,因此與其他通常的酸酐成分相比,能控制聚醯亞胺中的分子的面內配向性,且具有熱膨脹係數(CTE)的抑制與玻璃化轉變溫度(Tg)的提高效果。另外,與PMDA相比,BPDA及TAHQ的分子量更大,因此因投入比率的增加而醯亞胺基濃度降低,藉此對於介電損耗正切的降低或吸濕率的降低具有效果。另一方面,若BPDA及TAHQ的投入比率增加,則聚醯亞胺中的分子的面內配向性降低,而導致CTE的增加。進而,分子內的有序結構的形成得到推進,霧度值增加。就此種觀點而言,PMDA及NTCDA的合計投入量以相對於原料的全部酸酐成分的100莫耳份而為40莫耳份~70莫耳份的範圍內、優選為50莫耳份~60莫耳份的範圍內、更優選為50莫耳份~55莫耳份的範圍內為宜。若PMDA及NTCDA的合計投入量相對於原料的全部酸酐成分的100莫耳份而未滿40莫耳份,則分子的面內配向性降低,且低CTE化變得困難,另外,由Tg的降低引起的加熱時的膜的耐熱性或尺寸穩定性降低。另一方面,若PMDA及NTCDA的合計投入量超過70莫耳份,則存在因醯亞胺基濃度的增加而吸濕率惡化,或者使彈性係數增大的傾向。PMDA and NTCDA have a rigid skeleton, so compared with other common acid anhydride components, it can control the in-plane orientation of the molecules in polyimine, and has the suppression of the coefficient of thermal expansion (CTE) and the glass transition temperature (Tg) The improvement effect. In addition, compared with PMDA, BPDA and TAHQ have a larger molecular weight, so the increase in the input ratio reduces the concentration of the imine group, thereby having an effect on the reduction of the dielectric loss tangent or the reduction of the moisture absorption rate. On the other hand, if the input ratio of BPDA and TAHQ increases, the in-plane orientation of the molecules in the polyimide decreases, leading to an increase in CTE. Furthermore, the formation of an ordered structure within the molecule advances, and the haze value increases. From this point of view, the total input amount of PMDA and NTCDA is in the range of 40 mol parts to 70 mol parts relative to 100 mol parts of the total acid anhydride components of the raw materials, preferably 50 mol parts to 60 mol parts. It is more preferable to be in the range of ear parts, more preferably in the range of 50 mol parts to 55 mol parts. If the total input amount of PMDA and NTCDA is less than 40 mol parts relative to 100 mol parts of the total acid anhydride components of the raw materials, the in-plane alignment of the molecules will decrease, and it will be difficult to achieve low CTE. The heat resistance or dimensional stability of the film at the time of heating caused by the decrease is decreased. On the other hand, if the total input amount of PMDA and NTCDA exceeds 70 mole parts, the moisture absorption rate will deteriorate due to the increase in the imidine group concentration, or the elastic modulus will tend to increase.

另外,BPDA及TAHQ對於由分子運動的抑制或醯亞胺基濃度的降低引起的低介電損耗正切化、吸濕率降低具有效果,但會使作為醯亞胺化後的聚醯亞胺膜的CTE增大。就此種觀點而言,BPDA及TAHQ的合計投入量以相對於原料的全部酸酐成分的100莫耳份而為30莫耳份~60莫耳份的範圍內、優選為40莫耳份~50莫耳份的範圍內為宜。In addition, BPDA and TAHQ are effective in reducing the dielectric loss tangent and lowering the moisture absorption rate caused by the suppression of molecular motion or the decrease in the concentration of amide groups. The CTE increases. From this point of view, the total input amount of BPDA and TAHQ is in the range of 30 mol parts to 60 mol parts relative to 100 mol parts of all acid anhydride components of the raw materials, preferably 40 mol parts to 50 mol parts Appropriate within the range of ears.

作為構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺中所含的所述BPDA殘基、TAHQ殘基、PMDA殘基、NTCDA殘基以外的四羧酸殘基,例如可列舉由3,3',4,4'-二苯基碸四羧酸二酐、4,4'-氧基二鄰苯二甲酸酐、2,3',3,4'-聯苯四羧酸二酐、2,2',3,3'-二苯甲酮四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐或3,3',4,4'-二苯甲酮四羧酸二酐、2,3',3,4'-二苯基醚四羧酸二酐、雙(2,3-二羧基苯基)醚二酐、3,3'',4,4''-對三聯苯四羧酸二酐、2,3,3'',4''-對三聯苯四羧酸二酐或2,2'',3,3''-對三聯苯四羧酸二酐、2,2-雙(2,3-二羧基苯基)-丙烷二酐或2,2-雙(3,4-二羧基苯基)-丙烷二酐、雙(2,3-二羧基苯基)甲烷二酐或雙(3,4-二羧基苯基)甲烷二酐、雙(2,3-二羧基苯基)碸二酐或雙(3,4-二羧基苯基)碸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐或1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,7,8-菲-四羧酸二酐、1,2,6,7-菲-四羧酸二酐或1,2,9,10-菲-四羧酸二酐、2,3,6,7-蒽四羧酸二酐、2,2-雙(3,4-二羧基苯基)四氟丙烷二酐、2,3,5,6-環己烷二酐、1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、2,6-二氯萘-1,4,5,8-四羧酸二酐或2,7-二氯萘-1,4,5,8-四羧酸二酐、2,3,6,7-(或1,4,5,8-)四氯萘-1,4,5,8-(或2,3,6,7-)四羧酸二酐、2,3,8,9-苝-四羧酸二酐、3,4,9,10-苝-四羧酸二酐、4,5,10,11-苝-四羧酸二酐或5,6,11,12-苝-四羧酸二酐、環戊烷-1,2,3,4-四羧酸二酐、吡嗪-2,3,5,6-四羧酸二酐、吡咯烷-2,3,4,5-四羧酸二酐、噻吩-2,3,4,5-四羧酸二酐、4,4'-雙(2,3-二羧基苯氧基)二苯基甲烷二酐、乙二醇雙偏苯三酸酐等芳香族四羧酸二酐衍生的四羧酸殘基。Examples of tetracarboxylic acid residues other than the BPDA residue, TAHQ residue, PMDA residue, and NTCDA residue contained in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 include 3,3',4,4'-diphenyl tetracarboxylic dianhydride, 4,4'-oxydiphthalic anhydride, 2,3',3,4'-biphenyl tetracarboxylic dianhydride Anhydride, 2,2',3,3'-benzophenone tetracarboxylic dianhydride, 2,3,3',4'-benzophenone tetracarboxylic dianhydride or 3,3',4,4 '-Benzophenone tetracarboxylic dianhydride, 2,3',3,4'-diphenyl ether tetracarboxylic dianhydride, bis(2,3-dicarboxyphenyl) ether dianhydride, 3,3 '',4,4''-p-terphenyltetracarboxylic dianhydride, 2,3,3'',4''-p-terphenyltetracarboxylic dianhydride or 2,2'',3,3'' -P-terphenyltetracarboxylic dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-propane dianhydride or 2,2-bis(3,4-dicarboxyphenyl)-propane dianhydride, Bis(2,3-dicarboxyphenyl)methane dianhydride or bis(3,4-dicarboxyphenyl)methane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride or bis(3,4 -Dicarboxyphenyl) dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride or 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,2,7,8-phenanthrene-tetracarboxylic dianhydride, 1,2,6,7-phenanthrene-tetracarboxylic dianhydride or 1,2,9,10-phenanthrene-tetracarboxylic dianhydride, 2, 3,6,7-anthracene tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)tetrafluoropropane dianhydride, 2,3,5,6-cyclohexane dianhydride, 1, 2,5,6-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydro Naphthalene-1,2,5,6-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride or 2,7-dichloronaphthalene-1,4, 5,8-tetracarboxylic dianhydride, 2,3,6,7-(or 1,4,5,8-)tetrachloronaphthalene-1,4,5,8-(or 2,3,6,7 -) Tetracarboxylic dianhydride, 2,3,8,9-perylene-tetracarboxylic dianhydride, 3,4,9,10-perylene-tetracarboxylic dianhydride, 4,5,10,11-perylene- Tetracarboxylic dianhydride or 5,6,11,12-perylene-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6 -Tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 4,4'-bis(2,3 -Dicarboxyphenoxy) diphenylmethane dianhydride, ethylene glycol bistrimellitic anhydride, and other aromatic tetracarboxylic dianhydrides derived from tetracarboxylic acid residues.

(二胺殘基) 作為構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺中所含的二胺殘基,優選為由通式(A1)所表示的二胺化合物衍生的二胺殘基。(Diamine residue) The diamine residue contained in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 is preferably a diamine residue derived from a diamine compound represented by the general formula (A1).

[化3]

Figure 02_image005
[化3]
Figure 02_image005

在式(A1)中,連結基Z表示單鍵或-COO-,Y獨立地表示可經鹵素原子或苯基取代的碳數1~3的一價烴基、或者碳數1~3的烷氧基或碳數1~3的全氟烷基或烯基,n表示0~2的整數,p及q獨立地表示0~4的整數。此處,所謂「獨立地」,是指在所述式(A1)中多個取代基Y、以及整數p、整數q可相同也可不同。再者,在所述式(A1)中,末端的兩個氨基中的氫原子可經取代,例如也可為-NR2 R3 (此處,R2 、R3 獨立地是指烷基等任意的取代基)。In the formula (A1), the linking group Z represents a single bond or -COO-, and Y independently represents a monovalent hydrocarbon group having 1 to 3 carbons, or an alkoxy group having 1 to 3 carbons, which may be substituted by a halogen atom or a phenyl group. A group or a perfluoroalkyl or alkenyl group having 1 to 3 carbon atoms, n represents an integer of 0 to 2, and p and q independently represent an integer of 0 to 4. Here, "independently" means that in the formula (A1), the plurality of substituents Y, the integer p, and the integer q may be the same or different. Furthermore, in the formula (A1), the hydrogen atoms in the two terminal amino groups may be substituted, for example, -NR 2 R 3 (here, R 2 and R 3 independently refer to an alkyl group, etc.) Optional substituents).

通式(A1)所表示的二胺化合物(以下,有時記作「二胺(A1)」)為具有一個乃至三個苯環的芳香族二胺。二胺(A1)由於具有剛直結構,因此具有對聚合物整體賦予有序結構的作用。因此,可獲得透氣性低、低吸濕性的聚醯亞胺,可減少分子鏈內部的水分,因此可降低介電損耗正切。此處,作為連結基Z,優選為單鍵。The diamine compound represented by the general formula (A1) (hereinafter, sometimes referred to as "diamine (A1)") is an aromatic diamine having one or three benzene rings. Since the diamine (A1) has a rigid structure, it has the effect of imparting an ordered structure to the entire polymer. Therefore, a polyimide with low air permeability and low hygroscopicity can be obtained, and the moisture inside the molecular chain can be reduced, so the dielectric loss tangent can be reduced. Here, as the linking group Z, a single bond is preferable.

作為二胺(A1),例如可列舉:1,4-二氨基苯(p-PDA;對苯二胺)、2,2'-二甲基-4,4'-二氨基聯苯(m-TB)、2,2'-正丙基-4,4'-二氨基聯苯(m-NPB)、4-氨基苯基-4'-氨基苯甲酸酯(APAB)等。As the diamine (A1), for example, 1,4-diaminobenzene (p-PDA; p-phenylenediamine), 2,2'-dimethyl-4,4'-diaminobiphenyl (m- TB), 2,2'-n-propyl-4,4'-diaminobiphenyl (m-NPB), 4-aminophenyl-4'-aminobenzoate (APAB), etc.

構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺以相對於全部二胺殘基的100莫耳份而含有優選為80莫耳份以上、更優選為85莫耳份以上的由二胺(A1)衍生的二胺殘基為宜。通過以所述範圍內的量使用二胺(A1),並利用源自單體的剛直結構而容易在聚合物整體中形成有序結構,容易獲得透氣性低、低吸濕性且低介電損耗正切的非熱塑性聚醯亞胺。The non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 contains preferably 80 mol parts or more, more preferably 85 mol parts or more with respect to 100 mol parts of all diamine residues. Diamine residues derived from amine (A1) are preferred. By using the diamine (A1) in an amount within the above range, and using the rigid structure derived from the monomer, it is easy to form an ordered structure in the entire polymer, and it is easy to obtain low air permeability, low hygroscopicity, and low dielectric. Loss tangent non-thermoplastic polyimide.

另外,在由二胺(A1)衍生的二胺殘基相對於非熱塑性聚醯亞胺中的全部二胺殘基的100莫耳份而為80莫耳份以上且85莫耳份以下的範圍內的情況下,就為更剛直且面內配向性優異的結構的觀點而言,作為二胺(A1),優選為使用1,4-二氨基苯。In addition, the diamine residue derived from the diamine (A1) is in the range of 80 mol parts to 85 mol parts relative to 100 mol parts of all diamine residues in the non-thermoplastic polyimide In the case of internal, it is preferable to use 1,4-diaminobenzene as the diamine (A1) from the viewpoint of a more rigid structure and excellent in-plane alignment.

作為構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺中所含的其他二胺殘基,例如可列舉由2,2-雙-[4-(3-氨基苯氧基)苯基]丙烷、雙[4-(3-氨基苯氧基)苯基]碸、雙[4-(3-氨基苯氧基)]聯苯、雙[1-(3-氨基苯氧基)]聯苯、雙[4-(3-氨基苯氧基)苯基]甲烷、雙[4-(3-氨基苯氧基)苯基]醚、雙[4-(3-氨基苯氧基)]二苯甲酮、9,9-雙[4-(3-氨基苯氧基)苯基]茀、2,2-雙-[4-(4-氨基苯氧基)苯基]六氟丙烷、2,2-雙-[4-(3-氨基苯氧基)苯基]六氟丙烷、3,3'-二甲基-4,4'-二氨基聯苯、4,4'-亞甲基二-鄰甲苯胺、4,4'-亞甲基二-2,6-二甲苯胺、4,4'-亞甲基-2,6-二乙基苯胺、3,3'-二氨基二苯基乙烷、3,3'-二氨基聯苯、3,3'-二甲氧基聯苯胺、3,3''-二氨基-對三聯苯、4,4'-[1,4-伸苯基雙(1-甲基亞乙基)]雙苯胺、4,4'-[1,3-伸苯基雙(1-甲基亞乙基)]雙苯胺、雙(對氨基環己基)甲烷、雙(對-β-氨基-第三丁基苯基)醚、雙(對-β-甲基-δ-氨基戊基)苯、對-雙(2-甲基-4-氨基戊基)苯、對-雙(1,1-二甲基-5-氨基戊基)苯、1,5-二氨基萘、2,6-二氨基萘、2,4-雙(β-氨基-第三丁基)甲苯、2,4-二氨基甲苯、間二甲苯-2,5-二胺、對二甲苯-2,5-二胺、間二甲苯二胺、對二甲苯二胺、2,6-二氨基吡啶、2,5-二氨基吡啶、2,5-二氨基-1,3,4-惡二唑、呱嗪、2'-甲氧基-4,4'-二氨基苯甲醯苯胺、4,4'-二氨基苯甲醯苯胺、1,3-雙[2-(4-氨基苯基)-2-丙基]苯、6-氨基-2-(4-氨基苯氧基)苯並惡唑等芳香族二胺化合物衍生的二胺殘基、由二聚酸的兩個末端羧酸基被一級氨基甲基或氨基取代而成的二聚酸型二胺等脂肪族二胺化合物衍生的二胺殘基。Examples of other diamine residues contained in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31 include 2,2-bis-[4-(3-aminophenoxy)phenyl ] Propane, bis[4-(3-aminophenoxy)phenyl] sulfide, bis[4-(3-aminophenoxy)]biphenyl, bis[1-(3-aminophenoxy)] Benzene, bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)]bis Benzophenone, 9,9-bis[4-(3-aminophenoxy)phenyl] sulfone, 2,2-bis-[4-(4-aminophenoxy)phenyl]hexafluoropropane, 2 ,2-Bis-[4-(3-Aminophenoxy)phenyl]hexafluoropropane, 3,3'-dimethyl-4,4'-diaminobiphenyl, 4,4'-methylene Di-o-toluidine, 4,4'-methylenebis-2,6-dimethylaniline, 4,4'-methylene-2,6-diethylaniline, 3,3'-diaminodi Phenylethane, 3,3'-diaminobiphenyl, 3,3'-dimethoxybenzidine, 3,3''-diamino-p-terphenyl, 4,4'-[1,4- Phenylenebis(1-methylethylene)]bisaniline, 4,4'-[1,3-phenylenebis(1-methylethylene)]bisaniline, bis(p-aminocyclohexyl) )Methane, bis(p-β-amino-tert-butylphenyl) ether, bis(p-β-methyl-δ-aminopentyl)benzene, p-bis(2-methyl-4-aminopentyl) Yl)benzene, p-bis(1,1-dimethyl-5-aminopentyl)benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis(β-amino- Tertiary butyl) toluene, 2,4-diaminotoluene, m-xylene-2,5-diamine, p-xylene-2,5-diamine, m-xylene diamine, p-xylene diamine, 2 ,6-Diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-oxadiazole, piperazine, 2'-methoxy-4,4'-diaminobenzene Carboxamide, 4,4'-diaminobenzamide, 1,3-bis[2-(4-aminophenyl)-2-propyl]benzene, 6-amino-2-(4-aminobenzene (Oxy) diamine residues derived from aromatic diamine compounds such as benzoxazole, dimer acid type diamines and other fats in which two terminal carboxylic acid groups of dimer acid are substituted by primary aminomethyl or amino groups Diamine residues derived from a group of diamine compounds.

通過在非熱塑性聚醯亞胺中選定所述四羧酸殘基及二胺殘基的種類、或應用兩種以上的四羧酸殘基或二胺殘基時的各自的莫耳比,可控制熱膨脹係數、儲存彈性係數、拉伸彈性係數等。另外,當在非熱塑性聚醯亞胺中具有多個聚醯亞胺的結構單元時,可以嵌段的形式存在,也可無規地存在,但就抑制面內延遲(RO)的偏差的觀點而言,優選為無規地存在。By selecting the types of the tetracarboxylic acid residues and diamine residues in the non-thermoplastic polyimide, or applying the respective molar ratios of two or more tetracarboxylic acid residues or diamine residues, Control thermal expansion coefficient, storage elastic coefficient, tensile elastic coefficient, etc. In addition, when there are a plurality of polyimine structural units in the non-thermoplastic polyimine, they may exist in the form of blocks or randomly, but from the viewpoint of suppressing the deviation of the in-plane retardation (RO) In other words, it is preferable to exist randomly.

再者,通過將非熱塑性聚醯亞胺中所含的四羧酸殘基及二胺殘基均設為芳香族基,可提高聚醯亞胺膜的高溫環境下的尺寸精度,並可減小面內延遲(RO)的變化量,因此優選。Furthermore, by setting the tetracarboxylic acid residues and diamine residues contained in the non-thermoplastic polyimide as aromatic groups, the dimensional accuracy of the polyimide film under a high temperature environment can be improved, and the dimensional accuracy can be reduced. The amount of change in the in-face retardation (RO) is therefore preferable.

非熱塑性聚醯亞胺的醯亞胺基濃度優選為33%以下,更優選為32%以上。此處,「醯亞胺基濃度」是指將聚醯亞胺中的醯亞胺基部(-(CO)2 -N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過33%,則樹脂自身的分子量變小,並且因極性基的增加而低吸濕性也惡化。通過選擇所述酸酐與二胺化合物的組合來控制非熱塑性聚醯亞胺中的分子的配向性,藉此抑制伴隨醯亞胺基濃度降低的CTE的增加,保證低吸濕性。The concentration of the non-thermoplastic polyimine group is preferably 33% or less, and more preferably 32% or more. Here, the "imine group concentration" refers to the value obtained by dividing the molecular weight of the polyimine group (-(CO) 2 -N-) by the molecular weight of the entire structure of the polyimide . If the concentration of the imine group exceeds 33%, the molecular weight of the resin itself becomes small, and the low hygroscopicity also deteriorates due to the increase of the polar group. By selecting the combination of the acid anhydride and the diamine compound, the orientation of the molecules in the non-thermoplastic polyimine is controlled, thereby suppressing the increase in CTE accompanying the decrease in the concentration of the imine group, and ensuring low hygroscopicity.

非熱塑性聚醯亞胺的重量平均分子量例如優選為10,000~400,000的範圍內,更優選為50,000~350,000的範圍內。若重量平均分子量未滿10,000,則存在膜的強度降低而容易脆化的傾向。另一方面,若重量平均分子量超過400,000,則存在黏度過度增加而在塗敷作業時容易產生膜厚度不均、條紋等不良的傾向。The weight average molecular weight of the non-thermoplastic polyimide is, for example, preferably in the range of 10,000 to 400,000, and more preferably in the range of 50,000 to 350,000. If the weight average molecular weight is less than 10,000, the strength of the film decreases and it tends to become brittle. On the other hand, if the weight average molecular weight exceeds 400,000, the viscosity increases excessively, and defects such as film thickness unevenness and streaks tend to occur during the coating operation.

就確保作為基底層的功能且製造時及熱塑性聚醯亞胺塗敷時的搬送性的觀點而言,非熱塑性聚醯亞胺層31的厚度優選為6 μm以上且100 μm以下的範圍內,更優選為9 μm以上且50 μm以下的範圍內。在非熱塑性聚醯亞胺層31的厚度未滿所述下限值的情況下,電絕緣性或處理性變得不充分,若超過上限值,則生產性降低。From the viewpoint of ensuring the function as a base layer and the transportability at the time of manufacture and at the time of thermoplastic polyimide coating, the thickness of the non-thermoplastic polyimide layer 31 is preferably in the range of 6 μm or more and 100 μm or less. More preferably, it is in the range of 9 μm or more and 50 μm or less. When the thickness of the non-thermoplastic polyimide layer 31 is less than the above-mentioned lower limit value, electrical insulation or handling properties become insufficient, and when the thickness exceeds the upper limit value, productivity decreases.

就耐熱性的觀點而言,非熱塑性聚醯亞胺層31的玻璃化轉變溫度(Tg)優選為280℃以上。From the viewpoint of heat resistance, the glass transition temperature (Tg) of the non-thermoplastic polyimide layer 31 is preferably 280° C. or higher.

另外,就抑制翹曲的觀點而言,非熱塑性聚醯亞胺層31的熱膨脹係數以處於1 ppm/K以上且30 ppm/K以下的範圍內、優選為1 ppm/K以上且25 ppm/K以下的範圍內、更優選為15 ppm/K以上且25 ppm/K以下的範圍內為宜。In addition, from the viewpoint of suppressing warpage, the thermal expansion coefficient of the non-thermoplastic polyimide layer 31 is in the range of 1 ppm/K or more and 30 ppm/K, preferably 1 ppm/K or more and 25 ppm/K. It is preferable to be in the range of K or less, more preferably in the range of 15 ppm/K or more and 25 ppm/K or less.

另外,在構成非熱塑性聚醯亞胺層31的非熱塑性聚醯亞胺中可適宜調配例如塑化劑、環氧樹脂等其他硬化樹脂成分、硬化劑、硬化促進劑、偶合劑、填充劑、溶劑、阻燃劑等作為任意成分。但是,在塑化劑中具有含有大量極性基的塑化劑,且有其助長銅自銅佈線中擴散的擔憂,因此優選為極力不使用塑化劑。In addition, in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer 31, other hardening resin components such as plasticizers, epoxy resins, hardeners, hardening accelerators, coupling agents, fillers, Solvents, flame retardants, etc. are used as optional components. However, there is a plasticizer containing a large amount of polar groups in the plasticizer, and there is a concern that it promotes the diffusion of copper from the copper wiring. Therefore, it is preferable not to use a plasticizer as much as possible.

熱塑性聚醯亞胺層: 構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺包含四羧酸殘基及二胺殘基,優選為包含由芳香族四羧酸二酐衍生的芳香族四羧酸殘基及由芳香族二胺衍生的芳香族二胺殘基。Thermoplastic polyimide layer: The thermoplastic polyimide constituting the thermoplastic polyimide layer 33 contains a tetracarboxylic acid residue and a diamine residue, and preferably contains an aromatic tetracarboxylic acid residue derived from an aromatic tetracarboxylic dianhydride and an aromatic tetracarboxylic acid residue derived from an aromatic tetracarboxylic dianhydride. Aromatic diamine residue derived from diamine.

(四羧酸殘基) 作為構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺中所使用的四羧酸殘基,可使用與所述作為構成非熱塑性聚醯亞胺層的非熱塑性聚醯亞胺中的四羧酸殘基而例示的基相同的基。(Tetracarboxylic acid residue) As the tetracarboxylic acid residue used in the thermoplastic polyimide constituting the thermoplastic polyimide layer 33, the same as the tetracarboxylic acid residue in the non-thermoplastic polyimide constituting the non-thermoplastic polyimide layer can be used. The acid residue is the same as the exemplified group.

(二胺殘基) 作為構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺中所含的二胺殘基,優選為由通式(B1)~通式(B7)所表示的二胺化合物衍生的二胺殘基。(Diamine residue) The diamine residue contained in the thermoplastic polyimide constituting the thermoplastic polyimide layer 33 is preferably a diamine residue derived from a diamine compound represented by the general formula (B1) to (B7) .

[化4]

Figure 02_image007
[化4]
Figure 02_image007

在式(B1)~式(B7)中,R1 獨立地表示碳數1~6的一價烴基或烷氧基,連結基A獨立地表示選自-O-、-S-、-CO-、-SO-、-SO2 -、-COO-、-CH2 -、-C(CH3 )2 -、-NH-或-CONH-中的二價基,n1 獨立地表示0~4的整數。但是,自式(B3)中去除與式(B2)重複的部分,自式(B5)中去除與式(B4)重複的部分。此處,所謂「獨立地」,是指在所述式(B1)~式(B7)內的一個式或兩個以上式中多個連結基A、多個R1 或多個n1 可相同也可不同。再者,在所述式(B1)~式(B7)中,末端的兩個氨基中的氫原子可經取代,例如也可為-NR2 R3 (此處,R2 、R3 獨立地是指烷基等任意的取代基)。In formulas (B1) to (B7), R 1 independently represents a monovalent hydrocarbon group or alkoxy group having 1 to 6 carbon atoms, and the linking group A independently represents a group selected from -O-, -S-, -CO- , -SO-, -SO 2 -, -COO-, -CH 2 -, -C(CH 3 ) 2 -, -NH- or -CONH- in the divalent group, n 1 independently represents 0~4 Integer. However, the part that overlaps with the formula (B2) is removed from the formula (B3), and the part that overlaps with the formula (B4) is removed from the formula (B5). Here, "independently" means that one or two or more of the above formulas (B1) to (B7), in which multiple linking groups A, multiple R 1 or multiple n 1 may be the same It can also be different. Furthermore, in the formulas (B1) to (B7), the hydrogen atoms in the two terminal amino groups may be substituted, for example, -NR 2 R 3 (here, R 2 and R 3 are independently It means an optional substituent such as an alkyl group).

式(B1)所表示的二胺(以下,有時記作「二胺(B1)」)為具有兩個苯環的芳香族二胺。認為所述二胺(B1)通過直接鍵結於至少一個苯環上的氨基與二價連結基A處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B1),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-、-CH2 -、-C(CH3 )2 -、-CO-、-SO2 -、-S-。The diamine represented by the formula (B1) (hereinafter, sometimes referred to as "diamine (B1)") is an aromatic diamine having two benzene rings. It is believed that the diamine (B1) is in the meta position with the divalent linking group A through the amino group directly bonded to at least one benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility, which helps To improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B1), the thermoplasticity of polyimide improves. Here, the linking group A is preferably -O-, -CH 2 -, -C(CH 3 ) 2 -, -CO-, -SO 2 -, -S-.

作為二胺(B1),例如可列舉:3,3'-二氨基二苯基甲烷、3,3'-二氨基二苯基丙烷、3,3'-二氨基二苯基硫醚、3,3'-二氨基二苯基碸、3,3'-二氨基二苯基醚、3,4'-二氨基二苯基醚、3,4'-二氨基二苯基甲烷、3,4'-二氨基二苯基丙烷、3,4'-二氨基二苯基硫醚、3,3'-二氨基二苯甲酮、(3,3'-雙氨基)二苯基胺等。As diamine (B1), for example, 3,3'-diaminodiphenylmethane, 3,3'-diaminodiphenylpropane, 3,3'-diaminodiphenyl sulfide, 3, 3'-Diaminodiphenyl sulfide, 3,3'-Diaminodiphenyl ether, 3,4'-Diaminodiphenyl ether, 3,4'-Diaminodiphenylmethane, 3,4' -Diaminodiphenylpropane, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminobenzophenone, (3,3'-bisamino)diphenylamine, etc.

式(B2)所表示的二胺(以下,有時記作「二胺(B2)」)為具有三個苯環的芳香族二胺。認為所述二胺(B2)通過直接鍵結於至少一個苯環上的氨基與二價連結基A處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B2),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by the formula (B2) (hereinafter, sometimes referred to as "diamine (B2)") is an aromatic diamine having three benzene rings. It is believed that the diamine (B2) is in the meta position with the divalent linking group A through the amino group directly bonded to at least one benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility, which helps To improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B2), the thermoplasticity of polyimide is improved. Here, as the linking group A, -O- is preferable.

作為二胺(B2),例如可列舉:1,4-雙(3-氨基苯氧基)苯、3-[4-(4-氨基苯氧基)苯氧基]苯胺、3-[3-(4-氨基苯氧基)苯氧基]苯胺等。As the diamine (B2), for example, 1,4-bis(3-aminophenoxy)benzene, 3-[4-(4-aminophenoxy)phenoxy]aniline, 3-[3- (4-Aminophenoxy)phenoxy]aniline and the like.

式(B3)所表示的二胺(以下,有時記作「二胺(B3)」)為具有三個苯環的芳香族二胺。認為所述二胺(B3)通過直接鍵結於一個苯環上的兩個二價連結基A彼此處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B3),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by the formula (B3) (hereinafter, sometimes referred to as "diamine (B3)") is an aromatic diamine having three benzene rings. It is believed that the diamine (B3) is in the meta position with each other through the two divalent linking groups A directly bonded to a benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility, which helps To improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B3), the thermoplasticity of polyimide is improved. Here, as the linking group A, -O- is preferable.

作為二胺(B3),例如可列舉:1,3-雙(4-氨基苯氧基)苯(1,3-bis(4-aminophenoxy)benzene,TPE-R)、1,3-雙(3-氨基苯氧基)苯(1,3-bis(3-aminophenoxy)benzene,APB)、4,4'-[2-甲基-(1,3-伸苯基)雙氧基]雙苯胺、4,4'-[4-甲基-(1,3-伸苯基)雙氧基]雙苯胺、4,4'-[5-甲基-(1,3-伸苯基)雙氧基]雙苯胺等。As the diamine (B3), for example, 1,3-bis(4-aminophenoxy)benzene (1,3-bis(4-aminophenoxy)benzene, TPE-R), 1,3-bis(3 -Aminophenoxy)benzene (1,3-bis(3-aminophenoxy)benzene, APB), 4,4'-[2-methyl-(1,3-phenylene) bisoxy] bisaniline, 4,4'-[4-methyl-(1,3-phenylene) bisoxy] bisaniline, 4,4'-[5-methyl-(1,3-phenylene) bisoxy ] Dianiline and so on.

式(B4)所表示的二胺(以下,有時記作「二胺(B4)」)為具有四個苯環的芳香族二胺。認為所述二胺(B4)通過直接鍵結於至少一個苯環上的氨基與二價連結基A處於間位,而具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B4),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-、-CH2 -、-C(CH3 )2 -、-SO2 -、-CO-、-CONH-。The diamine represented by the formula (B4) (hereinafter, sometimes referred to as "diamine (B4)") is an aromatic diamine having four benzene rings. It is believed that the diamine (B4) is in meta position with the divalent linking group A through the amino group directly bonded to at least one benzene ring, and has high flexibility, which contributes to the improvement of the flexibility of the polyimide molecular chain. . Therefore, by using diamine (B4), the thermoplasticity of polyimide is improved. Here, as the linking group A, -O-, -CH 2 -, -C(CH 3 ) 2 -, -SO 2 -, -CO-, -CONH- are preferable.

作為二胺(B4),可列舉:雙[4-(3-氨基苯氧基)苯基]甲烷、雙[4-(3-氨基苯氧基)苯基]丙烷、雙[4-(3-氨基苯氧基)苯基]醚、雙[4-(3-氨基苯氧基)苯基]碸、雙[4-(3-氨基苯氧基)]二苯甲酮、雙[4,4'-(3-氨基苯氧基)]苯甲醯苯胺等。Examples of the diamine (B4) include bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]propane, and bis[4-(3 -Aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]sulfonate, bis[4-(3-aminophenoxy)]benzophenone, bis[4, 4'-(3-aminophenoxy)]benzaniline and the like.

式(B5)所表示的二胺(以下,有時記作「二胺(B5)」)為具有四個苯環的芳香族二胺。認為所述二胺(B5)通過直接鍵結於至少一個苯環上的兩個二價連結基A彼此處於間位,聚醯亞胺分子鏈所具有的自由度增加且具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B5),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by the formula (B5) (hereinafter, sometimes referred to as "diamine (B5)") is an aromatic diamine having four benzene rings. It is believed that the diamine (B5) is in the meta position with each other through the two divalent linking groups A directly bonded to at least one benzene ring, and the polyimide molecular chain has an increased degree of freedom and high flexibility. Helps improve the flexibility of the polyimide molecular chain. Therefore, by using diamine (B5), the thermoplasticity of polyimide is improved. Here, as the linking group A, -O- is preferable.

作為二胺(B5),可列舉4-[3-[4-(4-氨基苯氧基)苯氧基]苯氧基]苯胺、4,4'-[氧基雙(3,1-亞苯氧基)]雙苯胺等。Examples of the diamine (B5) include 4-[3-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline, 4,4'-[oxybis(3,1-ylidene) Phenoxy)] bisaniline and the like.

式(B6)所表示的二胺(以下,有時記作「二胺(B6)」)為具有四個苯環的芳香族二胺。認為所述二胺(B6)通過具有至少兩個醚鍵而具有高彎曲性,有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B6),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-C(CH3 )2 -、-O-、-SO2 -、-CO-。The diamine represented by the formula (B6) (hereinafter, sometimes referred to as "diamine (B6)") is an aromatic diamine having four benzene rings. It is considered that the diamine (B6) has high flexibility by having at least two ether bonds and contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B6), the thermoplasticity of polyimide is improved. Here, as the linking group A, -C(CH 3 ) 2 -, -O-, -SO 2 -, -CO- are preferable.

作為二胺(B6),例如可列舉:2,2-雙[4-(4-氨基苯氧基)苯基]丙烷(2,2-bis[4-(4-aminophenoxy)phenyl]propane,BAPP)、雙[4-(4-氨基苯氧基)苯基]醚(bis[4-(4-aminophenoxy)phenyl]ether,BAPE)、雙[4-(4-氨基苯氧基)苯基]碸(bis[4-(4-aminophenoxy)phenyl]sulfone,BAPS)、雙[4-(4-氨基苯氧基)苯基]酮(bis[4-(4-aminophenoxy)phenyl]ketone,BAPK)等。As the diamine (B6), for example, 2,2-bis[4-(4-aminophenoxy)phenyl]propane (2,2-bis[4-(4-aminophenoxy)phenyl]propane, BAPP ), bis[4-(4-aminophenoxy)phenyl]ether (BAPE), bis[4-(4-aminophenoxy)phenyl] Bis[4-(4-aminophenoxy)phenyl]sulfone, BAPS), bis[4-(4-aminophenoxy)phenyl]ketone (BAPK) Wait.

式(B7)所表示的二胺(以下,有時記作「二胺(B7)」)為具有四個苯環的芳香族二胺。所述二胺(B7)在二苯基骨架的兩側分別具有彎曲性高的二價連結基A,因此認為有助於聚醯亞胺分子鏈的柔軟性的提高。因此,通過使用二胺(B7),聚醯亞胺的熱塑性提高。此處,作為連結基A,優選為-O-。The diamine represented by the formula (B7) (hereinafter, sometimes referred to as "diamine (B7)") is an aromatic diamine having four benzene rings. The diamine (B7) has a divalent linking group A with high flexibility on both sides of the diphenyl skeleton, and therefore it is considered that it contributes to the improvement of the flexibility of the polyimide molecular chain. Therefore, by using diamine (B7), the thermoplasticity of polyimide is improved. Here, as the linking group A, -O- is preferable.

作為二胺(B7),例如可列舉雙[4-(3-氨基苯氧基)]聯苯、雙[4-(4-氨基苯氧基)]聯苯等。Examples of diamine (B7) include bis[4-(3-aminophenoxy)]biphenyl, bis[4-(4-aminophenoxy)]biphenyl, and the like.

構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺以相對於全部二胺殘基的100莫耳份而在60莫耳份以上、優選為60莫耳份以上且99莫耳份以下的範圍內、更優選為70莫耳份以上且95莫耳份以下的範圍內含有由選自二胺(B1)~二胺(B7)中的至少一種二胺化合物衍生的二胺殘基為宜。二胺(B1)~二胺(B7)由於含有具有彎曲性的分子結構,因此通過以所述範圍內的量使用選自這些中的至少一種二胺化合物,可提高聚醯亞胺分子鏈的柔軟性,且可賦予熱塑性。若原料中的二胺(B1)~二胺(B7)的合計量相對於全部二胺成分的100莫耳份而未滿60莫耳份,則因聚醯亞胺樹脂的柔軟性不足而無法獲得充分的熱塑性。The thermoplastic polyimide constituting the thermoplastic polyimide layer 33 is in the range of 60 mol parts or more, preferably 60 mol parts or more and 99 mol parts relative to 100 mol parts of all diamine residues It is more preferable to contain a diamine residue derived from at least one diamine compound selected from diamine (B1) to diamine (B7) in the range of 70 mol parts or more and 95 mol parts or less. Since diamine (B1) to diamine (B7) contain a flexible molecular structure, by using at least one diamine compound selected from these in an amount within the above-mentioned range, the polyimide molecular chain can be increased Softness, and can impart thermoplasticity. If the total amount of diamine (B1) to diamine (B7) in the raw material is less than 60 mol parts with respect to 100 mol parts of all diamine components, the polyimide resin is not sufficiently flexible due to insufficient flexibility. Obtain sufficient thermoplasticity.

另外,作為構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺中所含的二胺殘基,也優選為由通式(A1)所表示的二胺化合物衍生的二胺殘基。關於式(A1)所表示的二胺化合物[二胺(A1)],如在非熱塑性聚醯亞胺的說明中敘述那樣。二胺(A1)具有剛直結構,且具有對聚合物整體賦予有序結構的作用,因此可通過抑制分子的運動而使介電損耗正切或吸濕性降低。進而,通過用作熱塑性聚醯亞胺的原料,可獲得透氣性低、長期耐熱黏接性優異的聚醯亞胺。In addition, the diamine residue contained in the thermoplastic polyimide constituting the thermoplastic polyimide layer 33 is also preferably a diamine residue derived from a diamine compound represented by the general formula (A1). The diamine compound [diamine (A1)] represented by the formula (A1) is as described in the description of the non-thermoplastic polyimide. Diamine (A1) has a rigid structure and has the effect of imparting an ordered structure to the entire polymer. Therefore, it can reduce the dielectric loss tangent or hygroscopicity by inhibiting the movement of molecules. Furthermore, by being used as a raw material of thermoplastic polyimide, a polyimide having low air permeability and excellent long-term heat-resistant adhesiveness can be obtained.

構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺可在優選為1莫耳份以上且40莫耳份以下的範圍內、更優選為5莫耳份以上且30莫耳份以下的範圍內含有由二胺(A1)衍生的二胺殘基。通過以所述範圍內的量使用二胺(A1),並利用源自單體的剛直結構而在聚合物整體中形成有序結構,因此可獲得為熱塑性且透氣性及吸濕性低、長期耐熱黏接性優異的聚醯亞胺。The thermoplastic polyimide constituting the thermoplastic polyimide layer 33 may preferably be in the range of 1 mol part or more and 40 mol part or less, more preferably in the range of 5 mol part or more and 30 mol part or less. Contains diamine residues derived from diamine (A1). By using the diamine (A1) in the amount within the above range and using the rigid structure derived from the monomer to form an ordered structure in the entire polymer, it is possible to obtain thermoplasticity with low air permeability and hygroscopicity and long-term Polyimide with excellent heat resistance.

構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺可在不損及發明的效果的範圍內包含由二胺(A1)、二胺(B1)~二胺(B7)以外的二胺化合物衍生的二胺殘基。The thermoplastic polyimide constituting the thermoplastic polyimide layer 33 may be derived from diamine compounds other than diamine (A1), diamine (B1) to diamine (B7), within a range that does not impair the effects of the invention.的diamine residues.

通過在熱塑性聚醯亞胺中選定所述四羧酸殘基及二胺殘基的種類、或者應用兩種以上的四羧酸殘基或二胺殘基時的各自的莫耳比,可控制熱膨脹係數、拉伸彈性係數、玻璃化轉變溫度等。另外,當在熱塑性聚醯亞胺中具有多個聚醯亞胺的結構單元時,可以嵌段的形式存在,也可無規地存在,但優選為無規地存在。By selecting the types of the tetracarboxylic acid residues and diamine residues in the thermoplastic polyimide, or using two or more tetracarboxylic acid residues or diamine residues, the respective molar ratios can be controlled Thermal expansion coefficient, tensile elasticity coefficient, glass transition temperature, etc. In addition, when there are a plurality of polyimine structural units in the thermoplastic polyimine, they may exist in the form of blocks or may exist randomly, but they are preferably present randomly.

再者,通過將熱塑性聚醯亞胺中所含的四羧酸殘基及二胺殘基均設為芳香族基,可提高聚醯亞胺膜的高溫環境下的尺寸精度,且可抑制面內延遲(RO)的變化量。Furthermore, by setting both the tetracarboxylic acid residue and the diamine residue contained in the thermoplastic polyimide as aromatic groups, the dimensional accuracy of the polyimide film in a high-temperature environment can be improved, and the surface area can be suppressed. The amount of change in the internal delay (RO).

熱塑性聚醯亞胺的醯亞胺基濃度優選為33%以下,更優選為32%以上。此處,「醯亞胺基濃度」是指將聚醯亞胺中的醯亞胺基部(-(CO)2 -N-)的分子量除以聚醯亞胺的結構整體的分子量而得的值。若醯亞胺基濃度超過33%,則樹脂自身的分子量變小,並且因極性基的增加而低吸濕性也惡化。通過選擇所述二胺化合物的組合來控制熱塑性聚醯亞胺中的分子的配向性,藉此抑制伴隨醯亞胺基濃度降低的CTE的增加,保證低吸濕性。The concentration of the imine group of the thermoplastic polyimide is preferably 33% or less, and more preferably 32% or more. Here, the "imine group concentration" refers to the value obtained by dividing the molecular weight of the polyimine group (-(CO) 2 -N-) by the molecular weight of the entire structure of the polyimide . If the concentration of the imine group exceeds 33%, the molecular weight of the resin itself becomes small, and the low hygroscopicity also deteriorates due to the increase of the polar group. By selecting the combination of the diamine compounds to control the orientation of the molecules in the thermoplastic polyimine, thereby suppressing the increase in CTE accompanying the decrease in the concentration of the imine group, and ensuring low hygroscopicity.

熱塑性聚醯亞胺的重量平均分子量例如優選為10,000~400,000的範圍內,更優選為50,000~350,000的範圍內。若重量平均分子量未滿10,000,則存在膜的強度降低而容易脆化的傾向。另一方面,若重量平均分子量超過400,000,則存在黏度過度增加而在塗敷作業時容易產生膜厚度不均、條紋等不良的傾向。The weight average molecular weight of the thermoplastic polyimide is, for example, preferably in the range of 10,000 to 400,000, and more preferably in the range of 50,000 to 350,000. If the weight average molecular weight is less than 10,000, the strength of the film decreases and it tends to become brittle. On the other hand, if the weight average molecular weight exceeds 400,000, the viscosity increases excessively, and defects such as film thickness unevenness and streaks tend to occur during the coating operation.

構成熱塑性聚醯亞胺層33的熱塑性聚醯亞胺例如成為電路基板的絕緣樹脂中的黏接層,因此為了抑制銅的擴散,最優選為完全經醯亞胺化的結構。但是,聚醯亞胺的一部分也可成為醯胺酸。所述醯亞胺化率可通過使用傅立葉變換紅外分光光度計(市售品:日本分光製造的FT/IR620),並利用一次反射ATR法對聚醯亞胺薄膜的紅外線吸收光譜進行測定,以1015 cm-1 附近的苯環吸收體為基準,根據1780 cm-1 的源自醯亞胺基的C=O伸縮的吸光度而算出。The thermoplastic polyimide constituting the thermoplastic polyimide layer 33 becomes, for example, an adhesive layer in the insulating resin of the circuit board. Therefore, in order to suppress the diffusion of copper, it is most preferable to have a structure that is completely imidized. However, a part of polyimide may also become amide acid. The imidization rate can be measured by using a Fourier transform infrared spectrophotometer (commercial product: FT/IR620 manufactured by JASCO Corporation) and using the primary reflection ATR method to measure the infrared absorption spectrum of the polyimide film to The benzene ring absorber in the vicinity of 1015 cm -1 was used as a reference, and it was calculated from the absorbance of the C=O stretch and contraction derived from the amide group at 1780 cm -1.

就確保黏接功能的觀點而言,熱塑性聚醯亞胺層33的厚度優選為1 μm以上且10 μm以下的範圍內,更優選為1 μm以上且5 μm以下的範圍內。在熱塑性聚醯亞胺層33的厚度未滿所述下限值的情況下,黏接性變得不充分,若超過上限值,則存在尺寸穩定性惡化的傾向。From the viewpoint of ensuring the adhesion function, the thickness of the thermoplastic polyimide layer 33 is preferably in the range of 1 μm or more and 10 μm or less, and more preferably in the range of 1 μm or more and 5 μm or less. If the thickness of the thermoplastic polyimide layer 33 is less than the lower limit, the adhesiveness becomes insufficient, and if it exceeds the upper limit, the dimensional stability tends to deteriorate.

就抑制翹曲的觀點而言,熱塑性聚醯亞胺層33的熱膨脹係數以處於30 ppm/K以上、優選為30 ppm/K以上且100 ppm/K以下的範圍內、更優選為30 ppm/K以上且80 ppm/K以下的範圍內為宜。From the viewpoint of suppressing warpage, the thermal expansion coefficient of the thermoplastic polyimide layer 33 is in the range of 30 ppm/K or more, preferably 30 ppm/K or more and 100 ppm/K or less, more preferably 30 ppm/K. It is suitable to be in the range of K or more and 80 ppm/K or less.

另外,在熱塑性聚醯亞胺層33中所使用的樹脂中,除聚醯亞胺以外,還可適宜調配例如塑化劑、環氧樹脂等其他硬化樹脂成分、硬化劑、硬化促進劑、無機填料、偶合劑、填充劑、溶劑、阻燃劑等作為任意成分。In addition, in the resin used in the thermoplastic polyimide layer 33, in addition to polyimide, other hardening resin components such as plasticizers, epoxy resins, hardeners, hardening accelerators, and inorganic Fillers, coupling agents, fillers, solvents, flame retardants, etc. are used as optional components.

用以形成非熱塑性聚醯亞胺層31及熱塑性聚醯亞胺層33的非熱塑性聚醯亞胺及熱塑性聚醯亞胺可與所述DDA系聚醯亞胺同樣地通過如下方式來製造:使酸酐成分與二胺成分在溶媒中反應,生成聚醯胺酸後進行加熱閉環。在非熱塑性聚醯亞胺及熱塑性聚醯亞胺的合成中,所述酸酐及二胺也可分別僅使用一種,還可併用兩種以上來使用。通過選定酸酐及二胺的種類、或者使用兩種以上的酸酐或二胺時的各自的莫耳比,可控制熱膨脹性、黏接性、玻璃化轉變溫度等。The non-thermoplastic polyimide and thermoplastic polyimide used to form the non-thermoplastic polyimide layer 31 and the thermoplastic polyimide layer 33 can be manufactured in the same manner as the DDA-based polyimide in the following manner: The acid anhydride component and the diamine component are reacted in a solvent to generate polyamide acid, and then the ring is closed by heating. In the synthesis of non-thermoplastic polyimine and thermoplastic polyimide, each of the acid anhydrides and diamines may be used alone, or two or more of them may be used in combination. By selecting the types of acid anhydrides and diamines, or the respective molar ratios when two or more acid anhydrides or diamines are used, thermal expansion, adhesiveness, glass transition temperature, etc. can be controlled.

<熱膨脹係數> 在覆金屬層疊板10中,樹脂積層體20整體的熱膨脹係數(CTE)以10 ppm/K以上為宜,優選為10 ppm/K以上且30 ppm/K以下的範圍內,更優選為15 ppm/K以上且25 ppm/K以下的範圍內。若CTE未滿10 ppm/K或超過30 ppm/K,則產生翹曲或者尺寸穩定性降低。通過適宜變更所使用的原料的組合、厚度、乾燥/硬化條件,可製成具有所期望的CTE的聚醯亞胺層。<Coefficient of Thermal Expansion> In the metal-clad laminate 10, the thermal expansion coefficient (CTE) of the entire resin laminate 20 is preferably 10 ppm/K or more, preferably in the range of 10 ppm/K or more and 30 ppm/K or less, and more preferably 15 ppm /K or more and 25 ppm/K or less. If the CTE is less than 10 ppm/K or more than 30 ppm/K, warpage occurs or dimensional stability decreases. By appropriately changing the combination of the raw materials used, the thickness, and the drying/curing conditions, a polyimide layer having a desired CTE can be produced.

<介電損耗正切> 在覆金屬層疊板10中,樹脂積層體20整體的10 GHz下的介電損耗正切(Tanδ)以優選為0.02以下、更優選為0.0005以上且0.01以下的範圍內、進而優選為0.001以上且0.008以下的範圍內為宜。若樹脂積層體20整體的10 GHz下的介電損耗正切超過0.02,則在應用於電路基板時,容易在高頻信號的傳輸路徑上產生電信號的損失等不良情況。另一方面,樹脂積層體20整體的10 GHz下的介電損耗正切的下限值並無特別限制,但要考慮作為電路基板的絕緣樹脂層的物性控制。<Dielectric loss tangent> In the metal-clad laminate 10, the dielectric loss tangent (Tanδ) at 10 GHz of the entire resin laminate 20 is preferably within a range of 0.02 or less, more preferably 0.0005 or more and 0.01 or less, and still more preferably 0.001 or more and 0.008 The following ranges are appropriate. If the dielectric loss tangent at 10 GHz of the entire resin laminate 20 exceeds 0.02, when it is applied to a circuit board, defects such as electrical signal loss are likely to occur in the transmission path of high-frequency signals. On the other hand, the lower limit of the dielectric loss tangent at 10 GHz of the entire resin laminate 20 is not particularly limited, but the control of the physical properties of the insulating resin layer as a circuit board should be considered.

<介電常數> 在覆金屬層疊板10中,樹脂積層體20例如在用作電路基板的絕緣樹脂層的情況下,為了確保阻抗匹配性,以樹脂積層體20整體計,優選為10 GHz下的介電常數為4.0以下。若樹脂積層體20整體的10 GHz下的介電常數超過4.0,則在應用於電路基板時,導致介電損耗增大,容易在高頻信號的傳輸路徑上產生電信號的損失等不良情況。<Dielectric constant> In the metal-clad laminate 10, when the resin laminate 20 is used as an insulating resin layer of a circuit board, for example, in order to ensure impedance matching, the resin laminate 20 as a whole has a dielectric constant at 10 GHz. Below 4.0. If the dielectric constant at 10 GHz of the entire resin laminate 20 exceeds 4.0, when it is applied to a circuit board, the dielectric loss increases, and defects such as electrical signal loss are likely to occur in the transmission path of high-frequency signals.

[覆金屬層疊板的製造] 覆金屬層疊板10例如可通過如下方式來製造:準備相當於第一傳輸損耗抑制層BS1、第二傳輸損耗抑制層BS2、多層尺寸精度維持層PL及一層乃至多層中間傳輸損耗抑制層BS3的樹脂片,將這些樹脂片配置於第一金屬層M1與第二金屬層M2之間並加以貼合,進行熱壓接。[Manufacturing of metal-clad laminates] The metal-clad laminate 10 can be manufactured, for example, by preparing a resin corresponding to the first transmission loss suppression layer BS1, the second transmission loss suppression layer BS2, the multilayer dimensional accuracy maintaining layer PL, and one or more intermediate transmission loss suppression layers BS3 Sheets, these resin sheets are arranged between the first metal layer M1 and the second metal layer M2 and bonded together to perform thermocompression bonding.

以所述方式獲得的本實施方式的覆金屬層疊板10通過對第一金屬層M1和/或第二金屬層M2進行蝕刻等而進行佈線電路加工,從而可製造單面FPC或兩面FPC等電路基板。The metal-clad laminate 10 of the present embodiment obtained in the manner described above is processed by etching the first metal layer M1 and/or the second metal layer M2 to process wiring circuits, so that circuits such as single-sided FPC or double-sided FPC can be manufactured. Substrate.

[電路基板] 所述覆金屬層疊板10主要有效用作FPC、剛撓電路基板等電路基板材料。通過利用常規方法將覆金屬層疊板10的第一金屬層M1及第二金屬層M2的其中一者或兩者呈圖案狀加工而形成佈線層,從而可製造作為本發明的一實施方式的FPC等電路基板。關於所述電路基板,雖然省略圖示,但包括樹脂積層體20及設置於所述樹脂積層體20的單側或兩側的面上的佈線層,即便在高頻傳輸中也能減少傳輸損耗,且尺寸穩定性優異。[Circuit Board] The metal-clad laminate 10 is mainly effectively used as a circuit board material such as FPC and rigid-flex circuit board. By using a conventional method to process one or both of the first metal layer M1 and the second metal layer M2 of the metal-clad laminate 10 into a pattern to form a wiring layer, the FPC as an embodiment of the present invention can be manufactured And other circuit boards. Regarding the circuit board, although illustration is omitted, the resin laminate 20 and wiring layers provided on one or both sides of the resin laminate 20 can reduce transmission loss even in high-frequency transmission. , And excellent dimensional stability.

[實施例] 以下,通過實施例對本發明進行具體說明,但本發明不受這些實施例的任何限定。再者,在以下的實施例中,只要並無特別說明,則各種測定、評價基於下述內容。[Example] Hereinafter, the present invention will be specifically explained through examples, but the present invention is not limited by these examples at all. In addition, in the following examples, unless otherwise specified, various measurements and evaluations are based on the following.

[黏度的測定] 關於黏度的測定,使用E型黏度計(博勒菲(Brookfield)公司製造,商品名:DV-II+Pro)對25℃下的黏度進行測定。以扭矩(torque)成為10%~90%的方式設定轉速,開始測定起經過2分鐘後,讀取黏度穩定時的值。[Determination of Viscosity] For the measurement of viscosity, the viscosity at 25° C. was measured using an E-type viscometer (manufactured by Brookfield, trade name: DV-II+Pro). Set the rotation speed so that the torque becomes 10% to 90%. After 2 minutes have passed since the start of the measurement, read the value when the viscosity is stable.

[儲存彈性係數的測定] 針對5 mm×20 mm尺寸的樹脂片,使用動態黏彈性測定裝置(DMA:UBM公司製造,商品名:E4000F),自30℃至400℃為止以升溫速度4℃/分鐘、頻率11 Hz進行測定。[Measurement of Storage Elasticity Coefficient] For a resin sheet with a size of 5 mm×20 mm, a dynamic viscoelasticity measuring device (DMA: manufactured by UBM, trade name: E4000F) is used to measure from 30°C to 400°C at a heating rate of 4°C/min and a frequency of 11 Hz. .

[熱膨脹係數(CTE)的測定] 針對3 mm×20 mm尺寸的聚醯亞胺膜,使用熱機械分析儀(布魯克(Bruker)公司製造,商品名:4000SA),一邊施加5.0 g的負荷一邊以一定的升溫速度自30℃升溫至265℃,進而在所述溫度下保持10分鐘後,以5℃/分鐘的速度進行冷卻,求出自250℃至100℃為止的平均熱膨脹係數(熱膨脹係數)。[Determination of Coefficient of Thermal Expansion (CTE)] For the 3 mm×20 mm polyimide film, using a thermomechanical analyzer (manufactured by Bruker, trade name: 4000SA), the temperature was raised from 30°C at a constant temperature rise rate while applying a load of 5.0 g After maintaining the temperature at 265°C for 10 minutes, it was cooled at a rate of 5°C/min, and the average thermal expansion coefficient (thermal expansion coefficient) from 250°C to 100°C was obtained.

[介電常數及介電損耗正切的測定] 使用矢量網路分析儀(Vector Network Analyzer)(安捷倫(Agilent)公司製造,商品名:E8363C)以及SPDR諧振器,測定10 GHz下的樹脂片的介電常數(Dk)及介電損耗正切(Df)。再者,測定中所使用的材料是在溫度:24℃~26℃、濕度:45%~55%RH的條件下放置24小時的材料。[Measurement of dielectric constant and dielectric loss tangent] Using Vector Network Analyzer (manufactured by Agilent, trade name: E8363C) and SPDR resonator, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet at 10 GHz were measured ). In addition, the material used in the measurement is a material left for 24 hours under the conditions of temperature: 24°C to 26°C and humidity: 45% to 55% RH.

[尺寸變化率的測定] 尺寸變化率的測定通過以下的步驟來進行。首先,使用150 mm見方的試樣,以100 mm間隔對乾膜抗蝕劑進行曝光、顯影,藉此形成位置測定用靶。在溫度23±2℃、相對濕度50±5%的環境中測定蝕刻前(常態)的尺寸,然後通過蝕刻(液溫40℃以下、時間10分鐘以內)來去除試驗片的靶以外的銅。在溫度23±2℃、相對濕度50±5%的環境中靜置24±4小時,然後測定蝕刻後的尺寸。算出縱方向及橫方向上的各三部位的相對於常態的尺寸變化率,將各自的平均值設為蝕刻後的尺寸變化率。蝕刻後尺寸變化率是通過下述數式而算出。[Measurement of dimensional change rate] The measurement of the dimensional change rate is performed by the following procedure. First, a 150 mm square sample was used to expose and develop the dry film resist at 100 mm intervals to form a target for position measurement. Measure the size before etching (normal) in an environment with a temperature of 23±2°C and a relative humidity of 50±5%, and then remove the copper other than the target of the test piece by etching (liquid temperature below 40°C, time within 10 minutes). Let it stand for 24±4 hours in an environment with a temperature of 23±2°C and a relative humidity of 50±5%, and then measure the size after etching. The dimensional change rate from the normal state of each of the three positions in the vertical direction and the horizontal direction was calculated, and the average value of each was used as the dimensional change rate after etching. The dimensional change rate after etching is calculated by the following formula.

蝕刻後尺寸變化率(%)=(B-A)/A×100 A:蝕刻前的靶間距離 B:蝕刻後的靶間距離Dimensional change rate after etching (%)=(B-A)/A×100 A: Distance between targets before etching B: Distance between targets after etching

繼而,將本試驗片在250℃的烘箱中加熱處理1小時,測定之後的位置靶間的距離。算出縱方向及橫方向上的各三部位的相對於蝕刻後的尺寸變化率,將各自的平均值設為加熱處理後的尺寸變化率。加熱後尺寸變化率是通過下述數式而算出。Next, this test piece was heat-processed in the oven of 250 degreeC for 1 hour, and the distance between the position targets after that was measured. The dimensional change rates of the three locations in the vertical direction and the horizontal direction with respect to the dimensional change after etching were calculated, and the average value of each was used as the dimensional change rate after the heat treatment. The dimensional change rate after heating is calculated by the following formula.

加熱後尺寸變化率(%)=(C-B)/B×100 B:蝕刻後的靶間距離 C:加熱後的靶間距離Dimensional change rate after heating (%)=(C-B)/B×100 B: Distance between targets after etching C: Distance between targets after heating

[銅箔的表面粗糙度(Rz;十點平均粗糙度)的測定] 使用觸針式表面粗糙度計(小阪研究所股份有限公司製造,商品名:薩福科達(Surfcorder)ET-3000)並根據力(Force):100 μN、速度(Speed):20 μm、範圍(Range):800 μm的測定條件來求出。再者,表面粗糙度的算出是通過依據日本工業標準(Japanese Industrial Standards,JIS)-B0601:1994的方法而算出。[Measurement of surface roughness (Rz; ten-point average roughness) of copper foil] Use stylus type surface roughness meter (manufactured by Kosaka Research Institute Co., Ltd., trade name: Surfcorder ET-3000) and according to force (Force): 100 μN, speed (Speed): 20 μm, range (Range): Calculated under the measurement conditions of 800 μm. In addition, the surface roughness is calculated by a method based on Japanese Industrial Standards (JIS)-B0601:1994.

合成例中所使用的簡稱表示以下的化合物。 BTDA:3,3',4,4'-二苯甲酮四羧酸二酐 PMDA:均苯四甲酸二酐 BPDA:3,3',4,4'-聯苯四羧酸二酐 BPADA:2,2-雙[4-(3,4-二羧基苯氧基)苯基]丙烷二酐 DAPE:4,4'-二氨基二苯基醚 p-PDA:對苯二胺 BAPP:2,2-雙[4-(4-氨基苯氧基)苯基]丙烷 m-TB:2,2'-二甲基-4,4'-二氨基聯苯 TPE-R:1,3-雙(4-氨基苯氧基)苯 DDA:碳數36的脂肪族二胺(日本禾大(Croda Japan)股份有限公司製造,商品名:普利阿敏(PRIAMINE)1074,胺值:205 mgKOH/g,環狀結構及鏈狀結構的二聚物二胺的混合物,二聚物成分的含量:95重量%以上) OP935:有機膦酸鋁鹽(日本科萊恩(Clariant Japan)公司製造,商品名:艾克索利特(Exolit)OP935) N-12:十二烷二酸二醯肼 DMAc:N,N-二甲基乙醯胺 NMP:N-甲基-2-吡咯啶酮The abbreviations used in the synthesis examples indicate the following compounds. BTDA: 3,3',4,4'-benzophenone tetracarboxylic dianhydride PMDA: Pyromellitic dianhydride BPDA: 3,3',4,4'-biphenyltetracarboxylic dianhydride BPADA: 2,2-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride DAPE: 4,4'-diaminodiphenyl ether p-PDA: p-phenylenediamine BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane m-TB: 2,2'-dimethyl-4,4'-diaminobiphenyl TPE-R: 1,3-bis(4-aminophenoxy)benzene DDA: aliphatic diamine with 36 carbon atoms (manufactured by Croda Japan Co., Ltd., trade name: PRIAMINE 1074, amine value: 205 mgKOH/g, cyclic structure and chain structure The dimer diamine mixture, the content of the dimer component: 95% by weight or more) OP935: Organic phosphonate aluminum salt (manufactured by Clariant Japan, trade name: Exolit OP935) N-12: Dihydrazine dodecanedioic acid DMAc: N,N-Dimethylacetamide NMP: N-methyl-2-pyrrolidone

(合成例1) 在包括熱電偶及攪拌機並且能導入氮氣的反應容器中放入312 g的DMAc。在所述反應容器中,一邊在容器中攪拌一邊溶解14.67 g的DAPE(0.073莫耳)。繼而,加入23.13 g的BTDA(0.072莫耳)。其後,繼續攪拌3小時,從而製備溶液黏度2,960 mPa·s的聚醯胺酸的樹脂溶液a。(Synthesis example 1) Put 312 g of DMAc in a reaction vessel that includes a thermocouple and a stirrer and can introduce nitrogen. In the reaction vessel, 14.67 g of DAPE (0.073 mol) was dissolved while stirring in the vessel. Then, 23.13 g of BTDA (0.072 mol) was added. Thereafter, stirring was continued for 3 hours, thereby preparing a resin solution a of polyamide acid having a solution viscosity of 2,960 mPa·s.

(合成例2) 在包括熱電偶及攪拌機並且能導入氮氣的反應容器中放入200 g的DMAc。在所述反應容器中,一邊在容器中攪拌一邊溶解1.335 g的m-TB(0.0063莫耳)及10.414 g的TPE-R(0.0356莫耳)。繼而,加入0.932 g的PMDA(0.0043莫耳)及11.319 g的BPDA(0.0385莫耳)。其後,繼續攪拌2小時,從而製備溶液黏度1,420 mPa·s的聚醯胺酸的樹脂溶液b。(Synthesis example 2) Put 200 g of DMAc in a reaction vessel including a thermocouple and a stirrer and capable of introducing nitrogen. In the reaction vessel, 1.335 g of m-TB (0.0063 mol) and 10.414 g of TPE-R (0.0356 mol) were dissolved while stirring in the vessel. Then, 0.932 g of PMDA (0.0043 mol) and 11.319 g of BPDA (0.0385 mol) were added. Thereafter, stirring was continued for 2 hours to prepare a polyamide resin solution b with a solution viscosity of 1,420 mPa·s.

(合成例3) 在包括熱電偶及攪拌機並且能導入氮氣的反應容器中放入250 g的DMAc。在所述反應容器中,一邊在容器中攪拌一邊溶解2.561 g的p-PDA(0.0237莫耳)及16.813 g的DAPE(0.0840莫耳)。繼而,加入18.501 g的PMDA(0.0848莫耳)及6.239 g的BPDA(0.0212莫耳)。其後,繼續攪拌3小時,從而製備溶液黏度29,500 mPa·s的聚醯胺酸的樹脂溶液c。(Synthesis example 3) Put 250 g of DMAc in a reaction vessel that includes a thermocouple and a stirrer and can introduce nitrogen. In the reaction vessel, 2.561 g of p-PDA (0.0237 mol) and 16.813 g of DAPE (0.0840 mol) were dissolved while stirring in the vessel. Then, 18.501 g of PMDA (0.0848 mol) and 6.239 g of BPDA (0.0212 mol) were added. Thereafter, stirring was continued for 3 hours, thereby preparing a resin solution c of polyamide acid having a solution viscosity of 29,500 mPa·s.

(合成例4) 在包括熱電偶及攪拌機並且能導入氮氣的反應容器中放入250 g的DMAc。在所述反應容器中,一邊在容器中攪拌一邊溶解12.323 g的m-TB(0.0580莫耳)及1.886 g的TPE-R(0.0064莫耳)。繼而,加入8.314 g的PMDA(0.0381莫耳)及7.477 g的BPDA(0.0254莫耳)。其後,繼續攪拌3小時,從而製備溶液黏度31,500 mPa·s的聚醯胺酸的樹脂溶液d。(Synthesis example 4) Put 250 g of DMAc in a reaction vessel that includes a thermocouple and a stirrer and can introduce nitrogen. In the reaction vessel, 12.323 g of m-TB (0.0580 mol) and 1.886 g of TPE-R (0.0064 mol) were dissolved while stirring in the vessel. Then, 8.314 g of PMDA (0.0381 mol) and 7.477 g of BPDA (0.0254 mol) were added. Thereafter, stirring was continued for 3 hours to prepare a polyamide resin solution d with a solution viscosity of 31,500 mPa·s.

(合成例5) <黏接層用的樹脂溶液e的製備> 在帶有氮氣導入管、攪拌機、熱電偶、迪恩-斯達克分離器(Dean-Stark trap)、冷卻管的500 mL的四口燒瓶中裝入44.92 g的BTDA(0.139莫耳)、75.08 g的DDA(0.141莫耳)、168 g的NMP及112 g的二甲苯,在40℃下混合30分鐘而製備聚醯胺酸溶液。將所述聚醯胺酸溶液升溫至190℃,並加熱攪拌4小時,將所餾出的水及二甲苯去除至系統外。其後,冷卻至100℃,加入112 g的二甲苯並加以攪拌,進而冷卻至30℃,藉此完成醯亞胺化,從而獲得黏接層用的樹脂溶液e(固體成分:29.5重量%)。(Synthesis example 5) <Preparation of Resin Solution e for Adhesive Layer> Put 44.92 g of BTDA (0.139 mol), 75.08 into a 500 mL four-necked flask equipped with nitrogen introduction tube, stirrer, thermocouple, Dean-Stark trap and cooling tube g DDA (0.141 mol), 168 g of NMP, and 112 g of xylene were mixed at 40° C. for 30 minutes to prepare a polyamide acid solution. The polyamide acid solution was heated to 190°C, heated and stirred for 4 hours, and the distilled water and xylene were removed to the outside of the system. Thereafter, it was cooled to 100°C, 112 g of xylene was added and stirred, and then cooled to 30°C to complete the imidization, thereby obtaining a resin solution e for the adhesive layer (solid content: 29.5 wt%) .

(合成例6) <黏接層用的樹脂溶液f的製備> 除將42.51 g的BPADA(0.082莫耳)、34.30 g的DDA(0.066莫耳)、6.56 g的BAPP(0.016莫耳)、208 g的NMP及112 g的二甲苯設為原料組成以外,與合成例5同樣地製備聚醯胺酸溶液。與合成例5同樣地處理所述聚醯胺酸溶液,從而獲得黏接層用的樹脂溶液f(固體成分:30.0重量%)。(Synthesis example 6) <Preparation of resin solution f for adhesive layer> Except that 42.51 g of BPADA (0.082 mol), 34.30 g of DDA (0.066 mol), 6.56 g of BAPP (0.016 mol), 208 g of NMP and 112 g of xylene were used as the raw material composition, it was combined with the synthesis In Example 5, a polyamide acid solution was prepared in the same manner. The polyamide acid solution was processed in the same manner as in Synthesis Example 5 to obtain a resin solution f (solid content: 30.0% by weight) for the adhesive layer.

(製作例1) <聚醯亞胺膜的製備> 將聚醯胺酸的樹脂溶液c以使硬化後的厚度成為約25 μm的方式均勻塗布於電解銅箔1(厚度12 μm、Rz:2.1 μm)的單面表面,然後在120℃下進行加熱乾燥而去除溶媒。進而,在30分鐘以內自120℃至360℃為止進行階段性熱處理,完成醯亞胺化。使用氯化鐵水溶液來蝕刻去除銅箔而製備聚醯亞胺膜1(厚度:25 μm、Dk:3.4、Df:0.0085、CTE:16 ppm/K、儲存彈性係數最小值(100℃~250℃)2.9 GHz)。(Production example 1) <Preparation of polyimide film> Coat resin solution c of polyamide acid uniformly on one surface of electrolytic copper foil 1 (thickness 12 μm, Rz: 2.1 μm) so that the thickness after curing becomes about 25 μm, and then heat it at 120°C Dry and remove solvent. Furthermore, the stepwise heat treatment is performed from 120°C to 360°C within 30 minutes to complete the imidization. Use ferric chloride aqueous solution to etch and remove copper foil to prepare polyimide film 1 (thickness: 25 μm, Dk: 3.4, Df: 0.0085, CTE: 16 ppm/K, minimum storage elasticity coefficient (100℃~250℃) ) 2.9 GHz).

(製作例2) <聚醯亞胺膜的製備> 除使用樹脂溶液d以外,與製作例1同樣地製備聚醯亞胺膜2(厚度:25 μm、Dk:3.3、Df:0.0034、CTE:17 ppm/K、儲存彈性係數最小值(100℃~250℃)3.0 GHz)。(Production example 2) <Preparation of polyimide film> Except for using resin solution d, a polyimide film 2 (thickness: 25 μm, Dk: 3.3, Df: 0.0034, CTE: 17 ppm/K, minimum storage elasticity coefficient (100°C ~ 250°C) 3.0 GHz).

(製作例3) <聚醯亞胺膜的製備> 將樹脂溶液a以使硬化後的厚度成為約2 μm~3 μm的方式均勻塗布於電解銅箔1(厚度12 μm、Rz:2.1 μm)的單面表面,然後在120℃下進行加熱乾燥而去除溶媒。繼而,在其上將樹脂溶液d以使硬化後的厚度成為約21 μm的方式均勻塗布,然後在120℃下進行加熱乾燥而去除溶媒。進而,在其上將樹脂溶液a以使硬化後的厚度成為約2 μm~3 μm的方式均勻塗布,然後在120℃下進行加熱乾燥而去除溶媒。以所述方式形成三層聚醯胺酸層,然後自120℃至360℃為止進行階段性熱處理,完成醯亞胺化。使用氯化鐵水溶液來蝕刻去除銅箔層而製備聚醯亞胺膜3(厚度:25 μm、Dk:3.4、Df:0.0052、CTE:21 ppm/K、儲存彈性係數最小值(100℃~250℃)2.8 GHz)。(Production example 3) <Preparation of polyimide film> Coat resin solution a uniformly on the surface of electrolytic copper foil 1 (thickness 12 μm, Rz: 2.1 μm) so that the thickness after curing becomes approximately 2 μm to 3 μm, and then heat and dry it at 120°C. Remove solvent. Then, the resin solution d was uniformly applied thereon so that the thickness after curing became about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, the resin solution a is uniformly applied thereon so that the thickness after curing becomes approximately 2 μm to 3 μm, and then heated and dried at 120° C. to remove the solvent. A three-layer polyamide layer is formed in the manner described above, and then a stepwise heat treatment is performed from 120° C. to 360° C. to complete the imidization. Use ferric chloride aqueous solution to etch and remove the copper foil layer to prepare polyimide film 3 (thickness: 25 μm, Dk: 3.4, Df: 0.0052, CTE: 21 ppm/K, minimum storage elasticity coefficient (100℃~250 ℃) 2.8 GHz).

(製作例4) <聚醯亞胺膜的製備> 將樹脂溶液b以使硬化後的厚度成為約2 μm~3 μm的方式均勻塗布於電解銅箔1(厚度12 μm、Rz:2.1 μm)的單面表面,然後在120℃下進行加熱乾燥而去除溶媒。繼而,在其上將樹脂溶液d以使硬化後的厚度成為約21 μm的方式均勻塗布,然後在120℃下進行加熱乾燥而去除溶媒。進而,在其上將樹脂溶液b以使硬化後的厚度成為約2 μm~3 μm的方式均勻塗布,然後在120℃下進行加熱乾燥而去除溶媒。以所述方式形成三層聚醯胺酸層,然後自120℃至360℃為止進行階段性熱處理,完成醯亞胺化。使用氯化鐵水溶液來蝕刻去除銅箔層而製備聚醯亞胺膜4(厚度:25 μm、Dk:3.3、Df:0.0032、CTE:23 ppm/K、儲存彈性係數最小值(100℃~250℃)2.7 GHz)。(Production example 4) <Preparation of polyimide film> Coat resin solution b uniformly on the surface of one side of electrolytic copper foil 1 (thickness 12 μm, Rz: 2.1 μm) so that the thickness after curing becomes about 2 μm to 3 μm, and then heat and dry it at 120°C. Remove solvent. Then, the resin solution d was uniformly applied thereon so that the thickness after curing became about 21 μm, and then heated and dried at 120° C. to remove the solvent. Furthermore, the resin solution b is uniformly applied thereon so that the thickness after curing becomes approximately 2 μm to 3 μm, and then heated and dried at 120° C. to remove the solvent. A three-layer polyamide layer is formed in the manner described above, and then a stepwise heat treatment is performed from 120° C. to 360° C. to complete the imidization. Use ferric chloride aqueous solution to etch and remove the copper foil layer to prepare polyimide film 4 (thickness: 25 μm, Dk: 3.3, Df: 0.0032, CTE: 23 ppm/K, minimum storage elasticity coefficient (100℃~250 ℃) 2.7 GHz).

(製作例5) <樹脂片的製備> 在169.49 g的樹脂溶液e(固體成分為50 g)中調配1.8 g的N-12(0.0036莫耳)及12.5 g的OP935,並加入6.485 g的NMP與19.345 g的二甲苯進行稀釋,從而製備聚醯亞胺清漆1。(Production example 5) <Preparation of resin sheet> Mix 1.8 g of N-12 (0.0036 mol) and 12.5 g of OP935 in 169.49 g of resin solution e (50 g of solid content), and add 6.485 g of NMP and 19.345 g of xylene for dilution to prepare Polyimide varnish 1.

將聚醯亞胺清漆1以使乾燥後的厚度成為25 μm的方式塗敷於脫模基材的矽酮處理面上,然後在80℃下進行加熱乾燥,並自脫模基材上剝離,藉此製備樹脂片1。樹脂片1的介電常數(Dk)及介電損耗正切(Df)分別為2.7、0.0023。Polyimide varnish 1 is applied to the silicone-treated surface of the release substrate so that the thickness after drying becomes 25 μm, and then it is heated and dried at 80°C and peeled from the release substrate. Thus, the resin sheet 1 was prepared. The dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet 1 were 2.7 and 0.0023, respectively.

(製作例6) <樹脂片的製備> 除使乾燥後的厚度成為50 μm以外,與製作例6同樣地製備樹脂片2。樹脂片2的介電常數(Dk)及介電損耗正切(Df)分別為2.7、0.0023。(Production example 6) <Preparation of resin sheet> A resin sheet 2 was prepared in the same manner as in Preparation Example 6 except that the thickness after drying was 50 μm. The dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet 2 were 2.7 and 0.0023, respectively.

(製作例7) <樹脂片的製備> 除使乾燥後的厚度成為75 μm以外,與製作例6同樣地製備樹脂片3。樹脂片3的介電常數(Dk)及介電損耗正切(Df)分別為2.7、0.0023。(Production example 7) <Preparation of resin sheet> A resin sheet 3 was prepared in the same manner as in Preparation Example 6 except that the thickness after drying was 75 μm. The dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet 3 are 2.7 and 0.0023, respectively.

(製作例8) <樹脂片的製備> 除使乾燥後的厚度成為5 μm以外,與製作例6同樣地製備樹脂片4。樹脂片4的介電常數(Dk)及介電損耗正切(Df)分別為2.7、0.0023。(Production example 8) <Preparation of resin sheet> A resin sheet 4 was prepared in the same manner as in Preparation Example 6 except that the thickness after drying was 5 μm. The dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet 4 are 2.7 and 0.0023, respectively.

(製作例9) <樹脂片的製備> 將黏接層用的樹脂溶液f以使乾燥後的厚度成為25 μm的方式塗敷於脫模基材的矽酮處理面上,然後在80℃下進行加熱乾燥,並自脫模基材上剝離,藉此製備樹脂片5。樹脂片5的介電常數(Dk)及介電損耗正切(Df)分別為2.8、0.0028。(Production example 9) <Preparation of resin sheet> The resin solution f for the adhesive layer is applied to the silicone-treated surface of the release substrate so that the thickness after drying becomes 25 μm, and then heated and dried at 80°C, and then it is self-dried on the release substrate By peeling, a resin sheet 5 is prepared. The dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet 5 are 2.8 and 0.0028, respectively.

(製作例10) <樹脂片的製備> 除使乾燥後的厚度成為50 μm以外,與製作例9同樣地製備樹脂片6。樹脂片6的介電常數(Dk)及介電損耗正切(Df)分別為2.8、0.0028。(Production example 10) <Preparation of resin sheet> A resin sheet 6 was prepared in the same manner as in Preparation Example 9 except that the thickness after drying was 50 μm. The dielectric constant (Dk) and dielectric loss tangent (Df) of the resin sheet 6 are 2.8 and 0.0028, respectively.

[實施例1] 準備兩片電解銅箔1、兩片樹脂片1、一片樹脂片2、兩片聚醯亞胺膜4,以電解銅箔1/樹脂片1/聚醯亞胺膜4/樹脂片2/聚醯亞胺膜4/樹脂片1/電解銅箔1的順序層疊,然後在160℃、4 MPa的條件下熱壓接60分鐘,藉此製備兩面覆金屬層疊板1。對兩面覆金屬層疊板1進行評價的結果如下所述。 縱向(Machine Direction,MD)方向上的蝕刻後尺寸變化率:-0.05% 橫向(Transverse Direction,TD)方向上的蝕刻後尺寸變化率:-0.04% MD方向上的加熱後尺寸變化率:-0.03% TD方向上的加熱後尺寸變化率:0.03% 另外,蝕刻去除兩面覆金屬層疊板1中的電解銅箔1而製備的樹脂積層體1(厚度:150 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.9、0.0026。尺寸精度維持層的合計厚度為樹脂積層體1整體厚度的33%。[Example 1] Prepare two electrolytic copper foil 1, two resin sheets 1, one resin sheet 2, two polyimide films 4, and use electrolytic copper foil 1 / resin sheet 1 / polyimide film 4 / resin sheet 2 / polyimide film The imide film 4/resin sheet 1/electrolytic copper foil 1 was laminated in this order, and then thermocompression-bonded under the conditions of 160° C. and 4 MPa for 60 minutes, thereby preparing a double-sided metal-clad laminate 1. The evaluation results of the double-sided metal-clad laminate 1 are as follows. The dimensional change rate after etching in the machine direction (MD) direction: -0.05% The dimensional change rate after etching in the Transverse Direction (TD) direction: -0.04% Dimensional change rate in MD direction after heating: -0.03% Dimensional change rate in the TD direction after heating: 0.03% In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 1 (thickness: 150 μm) prepared by etching and removing the electrolytic copper foil 1 in the double-sided metal-clad laminate 1 were 2.9 and 0.0026, respectively. The total thickness of the dimensional accuracy maintaining layers is 33% of the entire thickness of the resin laminate 1.

[實施例2] 準備兩片電解銅箔1、兩片樹脂片1、一片樹脂片3、兩片聚醯亞胺膜4,以電解銅箔1/樹脂片1/聚醯亞胺膜4/樹脂片3/聚醯亞胺膜4/樹脂片1/電解銅箔1的順序層疊,然後在160℃、4 MPa的條件下熱壓接60分鐘,藉此製備兩面覆金屬層疊板2。對兩面覆金屬層疊板2進行評價的結果如下所述。 MD方向上的蝕刻後尺寸變化率:-0.06% TD方向上的蝕刻後尺寸變化率:-0.04% MD方向上的加熱後尺寸變化率:-0.04% TD方向上的加熱後尺寸變化率:0.04% 另外,蝕刻去除兩面覆金屬層疊板2中的電解銅箔1而製備的樹脂積層體2(厚度:175 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.92、0.0026。尺寸精度維持層的合計厚度為樹脂積層體2整體厚度的29%。[Example 2] Prepare two pieces of electrolytic copper foil 1, two pieces of resin sheet 1, one piece of resin sheet 3, and two pieces of polyimide film 4. The imide film 4/resin sheet 1/electrolytic copper foil 1 was laminated in this order, and then thermocompression-bonded under the conditions of 160° C. and 4 MPa for 60 minutes, thereby preparing a double-sided metal-clad laminate 2. The evaluation results of the double-sided metal-clad laminate 2 are as follows. Dimensional change rate after etching in MD direction: -0.06% Dimensional change rate after etching in TD direction: -0.04% Dimensional change rate in MD direction after heating: -0.04% Dimensional change rate in the TD direction after heating: 0.04% In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 2 (thickness: 175 μm) prepared by etching away the electrolytic copper foil 1 in the double-sided metal-clad laminate 2 were 2.92 and 0.0026, respectively. The total thickness of the dimensional accuracy maintaining layers is 29% of the entire thickness of the resin laminate 2.

[實施例3] 準備兩片電解銅箔1、一片樹脂片1、兩片樹脂片2、兩片聚醯亞胺膜4,以電解銅箔1/樹脂片2/聚醯亞胺膜4/樹脂片1/聚醯亞胺膜4/樹脂片2/電解銅箔1的順序層疊,然後在160℃、4 MPa的條件下熱壓接60分鐘,藉此製備兩面覆金屬層疊板3。對兩面覆金屬層疊板3進行評價的結果如下所述。 MD方向上的蝕刻後尺寸變化率:-0.02% TD方向上的蝕刻後尺寸變化率:0.03% MD方向上的加熱後尺寸變化率:-0.06% TD方向上的加熱後尺寸變化率:-0.02% 另外,蝕刻去除兩面覆金屬層疊板3中的電解銅箔1而製備的樹脂積層體3(厚度:175 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.9、0.0026。尺寸精度維持層的合計厚度為樹脂積層體3整體厚度的29%。[Example 3] Prepare two pieces of electrolytic copper foil 1, one resin sheet 1, two resin sheets 2, two polyimide films 4, and use electrolytic copper foil 1/resin sheet 2/polyimide film 4/resin sheet 1 and polyimide film. The imine film 4/resin sheet 2/electrolytic copper foil 1 was laminated in this order, and then thermocompression-bonded under the conditions of 160° C. and 4 MPa for 60 minutes, thereby preparing a double-sided metal-clad laminate 3. The evaluation results of the double-sided metal-clad laminate 3 are as follows. Dimensional change rate after etching in MD direction: -0.02% Dimensional change rate after etching in TD direction: 0.03% Dimensional change rate in MD direction after heating: -0.06% The dimensional change rate in the TD direction after heating: -0.02% In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 3 (thickness: 175 μm) prepared by etching and removing the electrolytic copper foil 1 in the double-sided metal-clad laminate 3 were 2.9 and 0.0026, respectively. The total thickness of the dimensional accuracy maintaining layers is 29% of the entire thickness of the resin laminate 3.

[實施例4] 除使用聚醯亞胺膜1來代替聚醯亞胺膜4以外,與實施例1同樣地製備兩面覆金屬層疊板4。對兩面覆金屬層疊板4進行評價,結果尺寸變化無問題。另外,蝕刻去除兩面覆金屬層疊板4中的電解銅箔1而製備的樹脂積層體4(厚度:150 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.9、0.0044。尺寸精度維持層的合計厚度為樹脂積層體4整體厚度的33%。[Example 4] Except that the polyimide film 1 was used instead of the polyimide film 4, a double-sided metal-clad laminate 4 was prepared in the same manner as in Example 1. Evaluation of the double-sided metal-clad laminate 4 showed that there was no problem with dimensional changes. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 4 (thickness: 150 μm) prepared by etching away the electrolytic copper foil 1 in the double-sided metal-clad laminate 4 were 2.9 and 0.0044, respectively. The total thickness of the dimensional accuracy maintaining layers is 33% of the entire thickness of the resin laminate 4.

[實施例5] 除使用聚醯亞胺膜2來代替聚醯亞胺膜4以外,與實施例1同樣地製備兩面覆金屬層疊板5。對兩面覆金屬層疊板5進行評價,結果尺寸變化無問題。另外,蝕刻去除兩面覆金屬層疊板5中的電解銅箔1而製備的樹脂積層體5(厚度:150 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.9、0.0027。尺寸精度維持層的合計厚度為樹脂積層體5整體厚度的33%。[Example 5] Except that the polyimide film 2 was used instead of the polyimide film 4, a double-sided metal-clad laminate 5 was prepared in the same manner as in Example 1. Evaluation of the double-sided metal-clad laminate 5 showed that there was no problem with dimensional changes. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 5 (thickness: 150 μm) prepared by etching away the electrolytic copper foil 1 in the double-sided metal-clad laminate 5 were 2.9 and 0.0027, respectively. The total thickness of the dimensional accuracy maintaining layers is 33% of the entire thickness of the resin laminate 5.

[實施例6] 除使用聚醯亞胺膜3來代替聚醯亞胺膜4以外,與實施例1同樣地製備兩面覆金屬層疊板6。對兩面覆金屬層疊板6進行評價,結果尺寸變化無問題。另外,蝕刻去除兩面覆金屬層疊板6中的電解銅箔1而製備的樹脂積層體6(厚度:150 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.9、0.0033。尺寸精度維持層的合計厚度為樹脂積層體6整體厚度的33%。[Example 6] Except that the polyimide film 3 was used instead of the polyimide film 4, a double-sided metal-clad laminate 6 was prepared in the same manner as in Example 1. Evaluation of the double-sided metal-clad laminate 6 showed that there was no problem with dimensional changes. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 6 (thickness: 150 μm) prepared by etching away the electrolytic copper foil 1 in the double-sided metal-clad laminate 6 were 2.9 and 0.0033, respectively. The total thickness of the dimensional accuracy maintaining layers is 33% of the entire thickness of the resin laminate 6.

[實施例7] 除使用樹脂片5來代替樹脂片1、使用樹脂片6來代替樹脂片2以外,與實施例1同樣地製備兩面覆金屬層疊板7。對兩面覆金屬層疊板7進行評價,結果尺寸變化無問題。另外,蝕刻去除兩面覆金屬層疊板7中的電解銅箔1而製備的樹脂積層體7(厚度:150 μm)的介電常數(Dk)及介電損耗正切(Df)分別為3.0、0.0029。尺寸精度維持層的合計厚度為樹脂積層體7整體厚度的33%。[Example 7] Except that the resin sheet 5 was used instead of the resin sheet 1 and the resin sheet 6 was used instead of the resin sheet 2, the double-sided metal-clad laminate 7 was prepared in the same manner as in Example 1. Evaluation of the double-sided metal-clad laminate 7 showed that there was no problem with dimensional changes. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 7 (thickness: 150 μm) prepared by etching away the electrolytic copper foil 1 in the double-sided metal-clad laminate 7 were 3.0 and 0.0029, respectively. The total thickness of the dimensional accuracy maintaining layers is 33% of the entire thickness of the resin laminate 7.

[實施例8] 除使用樹脂片4來代替樹脂片1以外,與實施例1同樣地製備兩面覆金屬層疊板8。對兩面覆金屬層疊板8進行評價,結果尺寸變化無問題。另外,蝕刻去除兩面覆金屬層疊板8中的電解銅箔1而製備的樹脂積層體8(厚度:110 μm)的介電常數(Dk)及介電損耗正切(Df)分別為3.0、0.0027。尺寸精度維持層的合計厚度為樹脂積層體8整體厚度的45%。[Example 8] A double-sided metal-clad laminate 8 was prepared in the same manner as in Example 1, except that the resin sheet 4 was used instead of the resin sheet 1. Evaluation of the double-sided metal-clad laminate 8 showed that there was no problem with dimensional changes. In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 8 (thickness: 110 μm) prepared by etching away the electrolytic copper foil 1 in the double-sided metal-clad laminate 8 were 3.0 and 0.0027, respectively. The total thickness of the dimensional accuracy maintaining layers is 45% of the entire thickness of the resin laminate 8.

[比較例1] 準備兩片電解銅箔1、兩片樹脂片2、一片聚醯亞胺膜1,以電解銅箔1/樹脂片2/聚醯亞胺膜1/樹脂片2/電解銅箔1的順序層疊,然後在160℃、4 MPa的條件下熱壓接60分鐘,藉此製備兩面覆金屬層疊板9。對兩面覆金屬層疊板9進行評價的結果如下所述。 MD方向上的蝕刻後尺寸變化率:0.02% TD方向上的蝕刻後尺寸變化率:0.08% MD方向上的加熱後尺寸變化率:-0.10% TD方向上的加熱後尺寸變化率:-0.05% 另外,蝕刻去除兩面覆金屬層疊板9中的電解銅箔1而製備的樹脂積層體9(厚度:125 μm)的介電常數(Dk)及介電損耗正切(Df)分別為2.8、0.0035。尺寸精度維持層的合計厚度為樹脂積層體9整體厚度的20%。[Comparative Example 1] Prepare two sheets of electrolytic copper foil 1, two sheets of resin sheet 2, and one sheet of polyimide film 1, which are laminated in the order of electrolytic copper foil 1 / resin sheet 2 / polyimide film 1 / resin sheet 2 / electrolytic copper foil 1 , And then thermocompression bonding under the conditions of 160° C. and 4 MPa for 60 minutes, thereby preparing a metal-clad laminate 9 on both sides. The evaluation results of the double-sided metal-clad laminate 9 are as follows. Dimensional change rate after etching in MD direction: 0.02% Dimensional change rate after etching in TD direction: 0.08% Dimensional change rate in MD direction after heating: -0.10% Dimensional change rate in the TD direction after heating: -0.05% In addition, the dielectric constant (Dk) and dielectric loss tangent (Df) of the resin laminate 9 (thickness: 125 μm) prepared by etching and removing the electrolytic copper foil 1 in the double-sided metal-clad laminate 9 were 2.8 and 0.0035, respectively. The total thickness of the dimensional accuracy maintaining layers is 20% of the entire thickness of the resin laminate 9.

以上,出於例示的目的而對本發明的實施方式進行了詳細說明,但本發明不受所述實施方式的制約,能進行各種變形。As mentioned above, the embodiment of the present invention has been described in detail for the purpose of illustration, but the present invention is not restricted by the above-mentioned embodiment and can be variously modified.

10:覆金屬層疊板 20:樹脂積層體 M1:第一金屬層 M2:第二金屬層 BS1:第一傳輸損耗抑制層 BS2:第二傳輸損耗抑制層 BS3:中間傳輸損耗抑制層 PL:尺寸精度維持層 31:非熱塑性聚醯亞胺層 33:熱塑性聚醯亞胺層10: Metal clad laminate 20: Resin laminate M1: The first metal layer M2: second metal layer BS1: The first transmission loss suppression layer BS2: The second transmission loss suppression layer BS3: Intermediate transmission loss suppression layer PL: Dimensional accuracy maintenance layer 31: Non-thermoplastic polyimide layer 33: Thermoplastic polyimide layer

圖1是表示本發明的一實施方式的覆金屬層疊板的結構的示意圖。 圖2是表示本發明的另一實施方式的覆金屬層疊板的結構的示意剖面圖。 圖3是表示本發明的又一實施方式的覆金屬層疊板的結構的示意剖面圖。 圖4是表示尺寸精度維持層的一結構例的示意剖面圖。FIG. 1 is a schematic diagram showing the structure of a metal-clad laminate according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view showing the structure of a metal-clad laminate according to another embodiment of the present invention. Fig. 3 is a schematic cross-sectional view showing the structure of a metal-clad laminate according to another embodiment of the present invention. Fig. 4 is a schematic cross-sectional view showing a configuration example of a dimensional accuracy maintaining layer.

10:覆金屬層疊板10: Metal clad laminate

20:樹脂積層體20: Resin laminate

M1:第一金屬層M1: The first metal layer

M2:第二金屬層M2: second metal layer

BS1:第一傳輸損耗抑制層BS1: The first transmission loss suppression layer

BS2:第二傳輸損耗抑制層BS2: The second transmission loss suppression layer

BS3:中間傳輸損耗抑制層BS3: Intermediate transmission loss suppression layer

PL:尺寸精度維持層PL: Dimensional accuracy maintenance layer

Claims (4)

一種覆金屬層疊板,包括: 第一金屬層、 與所述第一金屬層的單側相接設置的第一傳輸損耗抑制層、 第二金屬層、 與所述第二金屬層的單側相接設置的第二傳輸損耗抑制層、以及 介隔存在於所述第一傳輸損耗抑制層與所述第二傳輸損耗抑制層之間的多層樹脂層,並且 由所述第一傳輸損耗抑制層、所述第二傳輸損耗抑制層及所述多層樹脂層形成樹脂積層體, 所述樹脂積層體具有 至少兩層以上的尺寸精度維持層、及 層疊於所述尺寸精度維持層之間的中間傳輸損耗抑制層,並且 滿足下述條件i及條件ii; 條件i:在將所述第一傳輸損耗抑制層及所述第二傳輸損耗抑制層的介電損耗正切設為Df1 、將所述尺寸精度維持層的介電損耗正切設為Df2 時,處於Df1 <Df2 的關係,所述介電損耗正切為在23℃、50%RH的恆溫恆濕條件下調濕24小時後,通過分離介質諧振器而測定的10 GHz下的介電損耗正切; 條件ii:所述尺寸精度維持層的合計厚度處於所述樹脂積層體的合計厚度的25%~60%的範圍內。A metal-clad laminate, comprising: a first metal layer, a first transmission loss suppression layer arranged in contact with a single side of the first metal layer, a second metal layer, and a single side phase with the second metal layer A second transmission loss suppression layer, and a multilayer resin layer interposed between the first transmission loss suppression layer and the second transmission loss suppression layer, and are composed of the first transmission loss suppression layer, The second transmission loss suppression layer and the multilayer resin layer form a resin laminate, the resin laminate having at least two or more dimensional accuracy maintaining layers, and an intermediate transmission loss laminated between the dimensional accuracy maintaining layers A suppression layer, and satisfy the following condition i and condition ii; condition i: set the dielectric loss tangent of the first transmission loss suppression layer and the second transmission loss suppression layer as Df 1 , and set the dimensional accuracy When the dielectric loss tangent of the sustaining layer is set to Df 2 , it is in the relationship of Df 1 <Df 2 , and the dielectric loss tangent is that after humidity is adjusted at 23° C. and 50% RH for 24 hours, it passes through the separation medium Dielectric loss tangent at 10 GHz measured with a resonator; Condition ii: The total thickness of the dimensional accuracy maintaining layer is within a range of 25% to 60% of the total thickness of the resin laminate. 如請求項1所述的覆金屬層疊板,其中,所述尺寸精度維持層為100℃至250℃的溫度區域內的儲存彈性係數的最小值為1.0 GPa~8.0 GPa的範圍內、熱膨脹係數為15 ppm/K~25 ppm/K的範圍內的低熱膨脹性聚醯亞胺層。The metal-clad laminate according to claim 1, wherein the minimum value of the storage elastic coefficient in the temperature range of 100°C to 250°C of the dimensional accuracy maintaining layer is in the range of 1.0 GPa to 8.0 GPa, and the thermal expansion coefficient is Low thermal expansion polyimide layer in the range of 15 ppm/K to 25 ppm/K. 如請求項1或請求項2所述的覆金屬層疊板,其中,構成所述第一傳輸損耗抑制層及第二傳輸損耗抑制層的樹脂為使酸酐成分與二胺成分反應而成的聚醯亞胺,且相對於所述二胺成分的總量100莫耳份而含有50莫耳份以上的二聚物二胺,所述二聚物二胺的二聚酸的兩個末端羧酸基被一級氨基甲基或氨基取代而成。The metal-clad laminate according to claim 1 or claim 2, wherein the resin constituting the first transmission loss suppression layer and the second transmission loss suppression layer is a polyamide formed by reacting an acid anhydride component and a diamine component Imine, and containing 50 mol parts or more of dimer diamine relative to 100 mol parts of the total amount of the diamine component, the two terminal carboxylic acid groups of the dimer acid of the dimer diamine It is substituted by a primary aminomethyl or amino group. 一種電路基板,包括: 第一佈線層、 與所述第一佈線層的單側相接設置的第一傳輸損耗抑制層、 第二佈線層、 與所述第二佈線層的單側相接設置的第二傳輸損耗抑制層、以及 介隔存在於所述第一傳輸損耗抑制層與所述第二傳輸損耗抑制層之間的多層樹脂層,並且 由所述第一傳輸損耗抑制層、所述第二傳輸損耗抑制層及所述多層樹脂層形成樹脂積層體, 所述樹脂積層體具有 至少兩層以上的尺寸精度維持層、及 層疊於所述尺寸精度維持層之間的中間傳輸損耗抑制層,並且 滿足下述條件i及條件ii; 條件i:在將所述第一傳輸損耗抑制層及所述第二傳輸損耗抑制層的介電損耗正切設為Df1 、將所述尺寸精度維持層的介電損耗正切設為Df2 時,處於Df1 <Df2 的關係,所述介電損耗正切為在23℃、50%RH的恆溫恆濕條件下調濕24小時後,通過分離介質諧振器而測定的10 GHz下的介電損耗正切; 條件ii:所述尺寸精度維持層的合計厚度處於所述樹脂積層體的合計厚度的25%~60%的範圍內。A circuit substrate, comprising: a first wiring layer, a first transmission loss suppression layer provided in contact with a single side of the first wiring layer, a second wiring layer, and a first wiring layer provided in contact with a single side of the second wiring layer The second transmission loss suppression layer, and the multilayer resin layer interposed between the first transmission loss suppression layer and the second transmission loss suppression layer, and are composed of the first transmission loss suppression layer, the The second transmission loss suppression layer and the multilayer resin layer form a resin laminate, the resin laminate having at least two dimensional accuracy maintaining layers, and an intermediate transmission loss suppressing layer laminated between the dimensional accuracy maintaining layers , And satisfy the following conditions i and ii; condition i: set the dielectric loss tangent of the first transmission loss suppression layer and the second transmission loss suppression layer to Df 1 , and set the dimensional accuracy maintaining layer When the dielectric loss tangent of is set to Df 2 , it is in the relationship of Df 1 <Df 2 , and the dielectric loss tangent is 24 hours after adjusting the humidity at 23° C. and 50% RH under constant temperature and humidity conditions, and then passing through the separation dielectric resonator The measured dielectric loss tangent at 10 GHz; condition ii: the total thickness of the dimensional accuracy maintaining layer is within the range of 25% to 60% of the total thickness of the resin laminate.
TW109146039A 2019-12-27 2020-12-24 Metal-clad laminate and circuit substrate capable of reducing transmission loss even in high-frequency transmission and excellent in dimensional stability TW202126128A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019238111A JP2021106248A (en) 2019-12-27 2019-12-27 Metal-clad laminated plate and circuit board
JP2019-238111 2019-12-27

Publications (1)

Publication Number Publication Date
TW202126128A true TW202126128A (en) 2021-07-01

Family

ID=76508202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109146039A TW202126128A (en) 2019-12-27 2020-12-24 Metal-clad laminate and circuit substrate capable of reducing transmission loss even in high-frequency transmission and excellent in dimensional stability

Country Status (4)

Country Link
JP (1) JP2021106248A (en)
KR (1) KR20210084275A (en)
CN (1) CN113043690A (en)
TW (1) TW202126128A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802226B (en) * 2021-07-09 2023-05-11 日商Jx金屬股份有限公司 Surface treated copper foil, copper clad laminate and printed wiring board

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117528897A (en) * 2022-07-27 2024-02-06 宏启胜精密电子(秦皇岛)有限公司 Flexible circuit board and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4029732B2 (en) 2003-01-17 2008-01-09 宇部興産株式会社 Low dielectric constant polyimide substrate manufacturing method
JP5886027B2 (en) * 2011-12-21 2016-03-16 新日鉄住金化学株式会社 Double-sided metal-clad laminate and method for producing the same
JP6825368B2 (en) * 2016-01-05 2021-02-03 荒川化学工業株式会社 Copper-clad laminate and printed wiring board
JP2018140544A (en) * 2017-02-28 2018-09-13 新日鉄住金化学株式会社 Metal-clad laminate, adhesive sheet, adhesive polyimide resin composition, and circuit board
JP7301495B2 (en) 2017-03-30 2023-07-03 日鉄ケミカル&マテリアル株式会社 Metal-clad laminates and circuit boards

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802226B (en) * 2021-07-09 2023-05-11 日商Jx金屬股份有限公司 Surface treated copper foil, copper clad laminate and printed wiring board

Also Published As

Publication number Publication date
JP2021106248A (en) 2021-07-26
CN113043690A (en) 2021-06-29
KR20210084275A (en) 2021-07-07

Similar Documents

Publication Publication Date Title
JP7469383B2 (en) Metal-clad laminates and circuit boards
TW201825295A (en) Polyimide film, copper-clad laminate, and circuit substrate
JP7301495B2 (en) Metal-clad laminates and circuit boards
TWI814908B (en) Metal-clad laminates and circuit boards
TW202140622A (en) Resin film, metal-clad laminate and circuit board wherein the resin film includes a liquid crystal polymer layer, a first adhesive layer, and a second adhesive layer
TW202402887A (en) Resin film, cover film, circuit substrate, resin-attached copper foil, metal-clad laminate, multilayer circuit substrate, polyimide and adhesive resin composition capable of addressing the tendency of higher frequency for electronic equipment
TW202126128A (en) Metal-clad laminate and circuit substrate capable of reducing transmission loss even in high-frequency transmission and excellent in dimensional stability
JP2021161387A (en) Polyimide, crosslinked polyimide, adhesive film, laminate, coverlay film, copper foil with resin, metal-clad laminate, circuit board and multilayer circuit board
TW202010635A (en) Metal-cladded laminate plate, and circuit board
TW202138434A (en) Polyimide, polyimide composition, adhesive film and use thereof effectively reducing the transmission loss of high-frequency signals while suppressing the embrittlement of the resin film
TW202413090A (en) Metal-clad laminate, circuit board, electronic device and electronic apparatus
TW202400413A (en) Metal-clad laminate, circuit board, electronic device and electronic apparatus
JP2024059887A (en) Manufacturing method of metal-clad laminate
JP2024050431A (en) Metal-clad laminates, circuit boards, electronic devices and electronic equipment
TW202319444A (en) Polyamide acid, polyimide, polyimide film, metal-clad laminate and circuit
TW202237705A (en) Polyimide, metal-clad laminate plate and circuit board
JP2022158993A (en) Bond ply, circuit board and strip line using the same
JP2024051579A (en) Resin laminate, metal-clad laminate and circuit board
JP2022101117A (en) Resin film, metal-clad laminate and circuit board
JP2024052041A (en) Flexible Circuit Board
TW202239583A (en) Resin film, lamitate, coverlay film, copper foil with resin, metal-clad laminate plate, circuit board and multilayer circuit board
TW202337702A (en) Multilayer film, metal-clad laminate and circuit board
JP2022056866A (en) Polyimide, polyimide solution, polyimide film, adhesive film, laminate, coverlay film, copper foil with resin, metal-clad laminate, circuit board, and multilayer circuit board
JP2023139352A (en) Multilayer film, metal-clad laminate and circuit board
JP2021147610A (en) Polyimide, crosslinked polyimide, adhesive film, laminate, coverlay film, copper foil with resin, metal-clad laminate, circuit board and multilayer circuit board