TW202125683A - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

Info

Publication number
TW202125683A
TW202125683A TW109139616A TW109139616A TW202125683A TW 202125683 A TW202125683 A TW 202125683A TW 109139616 A TW109139616 A TW 109139616A TW 109139616 A TW109139616 A TW 109139616A TW 202125683 A TW202125683 A TW 202125683A
Authority
TW
Taiwan
Prior art keywords
substrate
turntable
chamber
ring
chambers
Prior art date
Application number
TW109139616A
Other languages
English (en)
Other versions
TWI748746B (zh
Inventor
吳俊昊
朴永秀
柳守烈
金學杜
孫侐主
朴商弼
許成壹
Original Assignee
南韓商系統科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商系統科技公司 filed Critical 南韓商系統科技公司
Publication of TW202125683A publication Critical patent/TW202125683A/zh
Application granted granted Critical
Publication of TWI748746B publication Critical patent/TWI748746B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67775—Docking arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明的目的在於提供一種在多個腔室之間能夠穩定地移送基板的基板處理裝置。用於實現此的本發明的基板處理裝置，包括：多個腔室，為了處理基板而沿圓周方向以預定間隔佈置；轉盤，配備為為了在所述多個腔室之間移送所述基板而旋轉，其中，所述多個腔室中的至少一個腔室配備有安置所述基板的平台和提供用於沿上下方向升降所述平台的驅動力的平台驅動部，所述轉盤包括：轉盤主體，藉由轉盤驅動部而升降以及旋轉；環形的轉盤環，配備為在安置於所述轉盤主體的狀態下能夠從所述轉盤主體分離。

Description

基板處理裝置
本發明涉及一種基板處理裝置，更詳細地涉及一種能夠穩定地移送基板的基板處理裝置。
通常，在半導體工序中，在與外部隔離的腔室內部在加熱或者冷卻基板等的多樣的條件下進行基板處理工序，並且正在開發用於執行所述基板處理工序的基板處理裝置。
所述基板處理裝置將多個腔室佈置為圓形，並且為了將裝載於腔室內部的基板依次移送至各個腔室而配備有在各個腔室之間移送基板的轉盤。
如此的現有的基板處理裝置詳細地記載在韓國授權專利第10-1796647號。
所述現有技術中記載的轉盤由形成為放射狀的多個臂和在所述臂的端部底面用於支撐基板的基板支撐部構成。
但是，根據這種結構的轉盤，存在在用轉盤移送基板期間變得不穩定的問題。
本發明為瞭解決上述的諸多問題而提出，其目的在於提供一種在多個腔室之間能夠穩定地移送基板的基板處理裝置。
用於達成上述的目的的本發明的基板處理裝置，包括：多個腔室，為了處理基板而沿圓周方向以預定間隔佈置；轉盤，配備為為了在所述多個腔室之間移送所述基板而旋轉，所述多個腔室中的至少一個腔室配備有安置所述基板的平台和提供用於沿上下方向升降所述平台的驅動力的平台驅動部，所述轉盤包括：轉盤主體，藉由轉盤驅動部而升降以及旋轉；環形的轉盤環，配備為在安置於所述轉盤主體的狀態下能夠從所述轉盤主體分離。
所述多個腔室中進行所述基板的裝載及卸載的第一腔室包括進行所述基板的裝載及卸載的上部的第一空間和形成於所述第一空間下部的第二空間，在所述第一空間和第二空間彼此隔離的狀態下進行所述基板的裝載及卸載，如果所述平台和轉盤環藉由所述平台驅動部而一起向上方向移動，則所述第一空間和第二空間可以通過所述轉盤環緊貼於配備在所述第一空間和第二空間的邊界的薄片部來實現隔離。
可以配備有環分離部件，當在所述轉盤環緊貼於所述薄片部的狀態下所述平台藉由所述平台驅動部而下降時，該環分離部件對所述轉盤環施加向下方向的力。
所述環分離部件可以是其下端部沿上下方向貫通所述薄片部，貫通的所述下端部接觸於所述轉盤環的上表面而施加所述向下方向的力。
所述轉盤環的上表面與所述薄片部之間配備有用於維持氣密的第一密封部件，所述轉盤環的底面與所述平台的邊緣位置部上表面之間可以配備有用於維持氣密的第二密封部件。
所述多個腔室包括：第一腔室，進行所述基板的裝載和卸載；多個熱處理腔室，用於移送裝載在所述第一腔室的基板並對裝載在所述第一腔室的基板依次進行熱處理，在所述多個熱處理腔室中經過熱處理的基板可以移送到所述第一腔室而被冷卻之後被卸載。
所述多個熱處理腔室中的每一個可以分別配備有隔壁，所述隔壁在處理移送到各自的腔室內部的基板期間，為了使各個腔室內部空間與其他腔室的空間隔離或連通而移動。
所述隔壁以上下升降的方式配備，所述隔壁下降而相接到位於所述多個熱處理腔室中的每一個的所述轉盤環的上表面，所述轉盤環的底面接觸並支撐於轉盤環支撐部。
根據本發明，配備有能夠從轉盤主體分離的轉盤環，通過在基板被所述轉盤環支撐的狀態下移送基板，從而能夠穩定地移送基板。
並且，能夠防止配備於進行基板的裝載及卸載的腔室的轉盤環粘附於薄片部。
以下，參照附圖對本發明進行詳細說明。
參照圖1至圖3，本發明的基板處理裝置1包括：多個腔室100、200、300、400、500，為了處理基板而沿圓周方向以預定間隔佈置；轉盤600，配備為為了在所述多個腔室100、200、300、400、500之間移送基板而旋轉；控制部（未示出），用於控制包括所述轉盤600的基板處理裝置1的構成。
在本發明的基板處理裝置1中作為一例，可以執行回流工序。並且，本發明的基板處理裝置1中，在不是執行回流工序的情況下也可以執行使用熱的工序。
所述多個腔室100、200、300、400、500可以包括：第一腔室100，進行所述基板的裝載和卸載；第二腔室200、第三腔室300、第四腔室400，用於對裝載在所述第一腔室100的基板加熱而進行熱處理；第五腔室500，冷卻在所述第四腔室400中經過熱處理的基板。
在所述第一腔室100中進行基板的裝載及卸載，不僅如此，還可以執行依次經過所述第二腔室200、第三腔室300、第四腔室400、第五腔室500而被加熱處理的基板的冷卻。在所述第二腔室200、第三腔室300、第四腔室400、第五腔室500中可以執行伴隨基板的加熱處理的工序，從而執行作為熱處理腔室的功能。
所述第五腔室500可以構成為在第一腔室100的冷卻之前執行冷卻工序。此時，所述第五腔室500也可以構成為配備加熱器以加熱基板，但是將基板的加熱溫度設定為低於在第四腔室400中加熱基板的溫度，從而實現基板的冷卻。
所述第一腔室100的一側連接設置有設備前端模塊2（EFFM：Equipment Front End Module）。
所述設備前端模塊2具有如下功能：將裝載於基板裝載部2a的未處理的基板利用配備於基板移送部2b的移送機器人（未示出）裝載到基板處理裝置1的第一腔室100，或者將基板處理裝置1中已完成處理的基板從第一腔室100卸載而裝載到基板裝載部2a。
所述第二腔室200、第三腔室300、第四腔室400、第五腔室500中加熱基板的溫度可以設定為100℃至450℃。並且，所述第二腔室200、第三腔室300、第四腔室400、第五腔室500分別可以配備有為了加熱基板而產生熱的加熱器。所述加熱器的形狀和大小可以變更為多種多樣，所述加熱器可以分別配備於基板的上部和下部。
所述第一腔室100、第二腔室200、第三腔室300、第四腔室400、第五腔室500可以各自配備有平台110、210、310、410、510。所述第一腔室100的平台110的上表面安置基板，可以通過冷卻單元而對基板進行冷卻。除了所述第一腔室100的平台110以外的其餘腔室200、300、400、500的平台210、310、410、510配備有加熱器，從而可以實現對基板施加熱的處理。
配備有主體外殼10，該主體外殼10圍繞所述第一腔室100、第二腔室200、第三腔室300、第四腔室400、第五腔室500及轉盤600的整個外側，並具有能夠設置所述各個部件的支撐架的功能。
所述轉盤600包括：轉盤主體610，藉由轉盤驅動部（未示出）而旋轉；多個開口部620，貫通所述轉盤主體610並以對應於所述多個腔室100、200、300、400、500的數量沿圓周外圍而形成；環形的轉盤環630，配備為支撐並安置在各個所述開口部620的邊緣位置的狀態下能夠從所述轉盤主體610分離。
所述轉盤驅動部可以配備為能夠使轉盤600旋轉，並且能夠使轉盤600沿上下方向升降。藉由這樣的構成，可以執行將基板從一個腔室移送到相鄰的腔室的功能。
所述轉盤環630結合有用於支撐基板的底面的基板支撐銷640。所述基板支撐銷640沿所述轉盤環630的圓周外圍而配備為多個，所述基板支撐銷640的一側端部用緊固部件（未示出）結合於所述轉盤環630，另一側端部配備為朝向所述轉盤環630的中心。
所述第一腔室100、第二腔室200、第三腔室300、第四腔室400、第五腔室500各自配備有多個所述基板支撐銷640。配備於各個所述腔室的所述多個基板支撐銷6400配備為沿中央的平台110、210、310、410、510的外圍而以預定間隔隔開佈置。配備於所述第一腔室100的平台110的上表面形成有凹陷的形狀的向上方向開放的基板支撐銷插入槽110a，在所述基板支撐銷插入槽110a插入有基板支撐銷640。
圖3的（a）表示轉盤環630安置於轉盤主體610的狀態，圖3的（b）表示轉盤環630從轉盤主體610分離的狀態。
如果驅動所述轉盤驅動部，則轉盤600在上下高度固定的狀態下進行旋轉。所述轉盤環630隨著後述的平台110升降而一同升降，所述轉盤環630以從所述轉盤主體610分離的狀態升降。
參照圖4針對作為所述多個腔室100、200、300、400、500中的一個的第一腔室100的結構及內部構成進行說明。
所述第一腔室100由上部腔室100a和配備於所述上部腔室100a的下側的下部腔室100b組成。
所述上部腔室100a的內部形成有第一空間S1，所述下部腔室100b的內部形成有第二空間S2。
所述第一腔室100中基板W的裝載及卸載是在所述第一空間S1與第二空間S2在空間上隔離而互不連通的狀態下執行。
所述第一空間S1具有藉由移送機器人而裝載基板裝載部2a的基板W或藉由移送機器人將已完成基板處理的基板W卸載到基板裝載部2a的作為裝載鎖定部的功能。
所述第二空間S2佈置有轉盤600，並且與相鄰的另外腔室200、300、400、500連通而提供各個腔室100、200、300、400、500之間移送基板W的通路。即，所述第二空間S2具有將裝載的基板從第一腔室100移送到第二腔室200的通路的功能、將所述第五腔室500中已完成處理的基板移送到裝載鎖定部的通路的功能以及卸載之前執行基板的冷卻的作為工序腔室的功能。
所述上部腔室100a的一側面形成有用於使裝載及卸載的基板出入的開口部（未示出），所述開口部通過閘閥（未示出）進行開閉。
所述第一腔室100配備有：平台110，安置基板W；升降銷160，支撐所述基板W的底面而升降基板；冷卻單元（未示出），用於冷卻裝載在所述平台110的上部的基板。並且，可以配備有提供驅動力以使所述平台110能夠沿上下方向進行升降的平台驅動部（未示出）。
所述上部腔室100a與下部腔室100b的邊界部分形成有向內側突出的薄片部100c。所述平台110與轉盤環630上升，從而所述轉盤環630的上表面緊貼於所述薄片部100c。所述轉盤環630的上表面與所述薄片部100c之間夾設有第一密封部件171，從而保持氣密。並且，所述轉盤環630的底面與平台110的上表面之間夾設有第二密封部件172，從而保持氣密。
在這種狀態下，第一腔室100的內部空間以平台110為基準其上側的第一空間S1與下側的第二空間S2相互隔離。
所述升降銷160配備為沿上下方向貫通所述平台110。配備有用於使所述升降銷160沿上下方向升降的升降銷驅動部（未示出）。如果驅動所述升降銷驅動部而使所述升降銷160上升或下降，則在升降銷160的上端支撐基板W的底面的狀態下實現基板W的升降。
平台110和升降銷160藉由所述平台驅動部和升降銷驅動部的驅動而上升，所述轉盤環630處於從轉盤主體610分離而與平台110一起向上移動的狀態。
在此狀態下將會藉由移送機器人將基板W從基板裝載部2a裝載到上部腔室100a的內部或者將上部腔室100a內部的基板W卸載到基板裝載部2a。
所述第一腔室100可以配備有環分離部件120，當在所述轉盤環630緊貼於所述薄片部100c的狀態下所述平台110藉由所述平台驅動部而下降時，為了防止所述轉盤環630粘附於薄片部100c的底面，該環分離部件120對所述轉盤環630施加向下方向的力。
所述環分離部件120可以配備為下端部貫通所述薄片部100c，並且會藉由提供升降所述環分離部件120的力的分離部件驅動部（未示出）的驅動而進行升降。
所述第二腔室200的上面配備有用於安置基板W而進行基板處理的平台210，並且配備有用於圍繞所述平台210的上部空間的內壁101和從所述內壁101的外側面沿上下方向移動的隔壁700。
所述內壁101可以一體地形成於圍繞第二腔室200的外殼。所述隔壁700配備為在緊貼於所述內壁101的外側面的狀態下能夠進行上下移動。可以配備有用於使所述隔壁700上下移動的隔壁驅動部（未示出）。
所述隔壁700配備為在第二腔室200進行基板處理期間使平台210的上部空間與其他腔室隔離，或者完成基板處理後，為了與其他腔室連通而進行上下升降。所述隔壁700也可以分別配備於第三腔室至第五腔室300、400、500。
如圖4所示，在所述隔壁700向上移動的情形下，第二腔室200的內部空間成為與其他腔室連通的狀態，如果所述隔壁700向下移動而下端部接觸於轉盤環630，則第二腔室200的內部空間成為不與其他腔室連通的隔離狀態。所述轉盤環630的上表面630配備有第三密封部件271，所述隔壁700的下端部和所述轉盤環630的上表面之間夾設有所述第三密封部件271，從而可以維持氣密。
所述第二腔室200配備有轉盤環支撐部20，所述轉盤環630的底面接觸並支撐於所述轉盤環支撐部20的上表面並被支撐。
在所述實施例中，構成為所述隔壁700的下端部接觸於轉盤環630，轉盤環630的底面接觸於轉盤環支撐部20，但是也可以構成為在轉盤主體610的上表面和底面分別接觸隔壁700的下端部和轉盤環支撐部20的上表面。
圖5表示在圖4的狀態下驅動升降銷驅動部而使升降銷160下降的狀態。若所述升降銷160下降，則基板W將安置於平台110上。
圖6表示在圖5的狀態下驅動平台驅動部而使平台110下降的狀態。此時，升降銷160藉由升降銷驅動部的驅動而向下移動。所述轉盤環630和基板支撐銷640與平台110一起下降，此時將下降到所述轉盤環630安置於轉盤主體610為止。
圖5的狀態是轉盤環630的上表面緊貼於薄片部100c的狀態，第一空間S1和第二空間S2被隔離。在這種狀態下，若使平台110下降，則可能發生轉盤環630粘附於薄片部100c的底面的情況。當所述第一空間S1作為裝載鎖定部而發揮功能時，第一空間S1可以形成為真空，此時可能會頻繁發生所述轉盤環630粘附於薄片部100c的底面的現象。
因此，在圖5的狀態下，若平台110下降的同時驅動分離部件驅動部而使其驅動為使環分離部件120下降，則所述環分離部件120的下端部對所述轉盤環630的上表面加壓，從而防止轉盤環630的上表面粘附於薄片部100c的底面，所述轉盤環630將與平台110一起下降。
圖7表示在圖6的狀態下驅動轉盤驅動部而使轉盤600上升的狀態。若所述轉盤600上升，則基板W在其底面被基板支撐銷640支撐的狀態下與轉盤600一起上升。
圖8表示在圖7的狀態下驅動轉盤驅動部而使轉盤600旋轉的狀態。若所述轉盤600旋轉，則基板W將從第一腔室100移送到相鄰的第二腔室200。如果第五腔室500中具有已進行基板處理的基板，則曾位於第五腔室500的基板可以藉由轉盤600的旋轉而移動到第一腔室100。
圖9表示在圖8的狀態下轉盤600藉由轉盤驅動部的驅動而下降，從而基板W安置於平台210的上表面的狀態。
圖10表示在圖9的狀態下隔壁700藉由隔壁驅動部的驅動而下降，從而隔壁700的下端部接觸於轉盤環630的上表面的狀態。所述隔壁700的下端部隔著第三密封部件271而接觸於轉盤環630的上表面，所述轉盤環630的底面藉由轉盤環支撐部20而被支撐。因此，第二腔室200的上部的內部空間S3和下部的內部空間S4以不與其他腔室100、300、400、500的內部空間連通的方式而被隔離。
此時，當從第五腔室500移送的基板W位於第一腔室100時，在所述第一腔室100進行基板W的冷卻的同時，為了冷卻後卸載基板W，可以構成為平台110上升而使轉盤環630的上表面緊貼於薄片部100c。此後，若升降銷160上升而基板W的底面從平台110的上表面隔開，則將實現基板W的卸載。
根據如上所述的構成，由於在基板被配備於轉盤600的轉盤環630支撐的狀態下進行旋轉而實現基板的移送，因此能夠穩定地移送基板。並且，可以防止平台110下降時轉盤環630粘附於薄片部100c的現象。
如上所述，舉出優選的實施例對本發明進行了詳細的說明，但是本發明並不局限於前述的實施例，在權利要求書和發明的詳細的說明以及附圖的範圍內能夠以多種方式變形實施，這也屬於本發明。
1:基板處理裝置 2:設備前端模塊 2a:基板裝載部 2b:基板移送部 20:轉盤環支撐部 100:第一腔室 100a:上部腔室 100b:下部腔室 100c:薄片部 101:內壁 110、210、310、410、510:平台 120:環分離部件 160:升降銷 171:第一密封部件 172:第二密封部件 200:第二腔室 271:第三密封部件 300:第三腔室 400:第四腔室 500:第五腔室 600:轉盤 610:轉盤主體 620:開口部 630:轉盤環 640:基板支撐銷 700:隔壁 S1:第一空間 S2:第二空間 S3:內部空間 S4:內部空間 W:基板
圖1是表示本發明的基板處理裝置的平面圖。 圖2是表示本發明的基板處理裝置中各個腔室的內部結構的立體圖。 圖3的（a）和（b）是表示本發明的轉盤的立體圖。 圖4是表示本發明的基板處理裝置中在第一空間和第二空間被隔離的狀態下基板被升降銷支撐的狀態的剖面圖。 圖5是表示在圖4的狀態下升降銷下降而基板安置於平台上表面的狀態的剖面圖。 圖6是表示在圖5的狀態下平台與升降銷下降到轉盤環安置於轉盤主體的位置的狀態的剖面圖。 圖7是表示在圖6的狀態下轉盤上升，從而基板從平台上表面隔開的狀態的剖面圖。 圖8是表示在圖7的狀態下轉盤旋轉，從而第一腔室的基板被移送到第二腔室的狀態的剖面圖。 圖9是表示在圖8的狀態下第二腔室的基板安置於平台上表面的狀態的剖面圖。 圖10是示出第一腔室中第一空間和第二空間隔離的狀態，且示出第二腔室中第二腔室的內部空間藉由隔壁而與其他腔室的內部空間隔離的狀態的圖。
20:轉盤環支撐部
100:第一腔室
100a:上部腔室
100b:下部腔室
100c:薄片部
101:內壁
110:平台
120:環分離部件
160:升降銷
171:第一密封部件
172:第二密封部件
200:第二腔室
210:平台
271:第三密封部件
610:轉盤主體
630:轉盤環
640:基板支撐銷
700:隔壁
S1:第一空間
S2:第二空間
W:基板

Claims (8)

  1. 一種基板處理裝置，包括： 多個腔室，為了處理基板而沿圓周方向以預定間隔佈置； 轉盤，配備為為了在該等腔室之間移送該基板而旋轉，其中該等腔室中的至少一個腔室配備有安置該基板的平台和提供用於沿上下方向升降該平台的驅動力的平台驅動部，該轉盤包括： 轉盤主體，藉由轉盤驅動部而升降以及旋轉； 環形的轉盤環，配備為在安置於該轉盤主體的狀態下供從該轉盤主體分離。
  2. 根據請求項1所述的基板處理裝置，其中該等腔室中進行該基板的裝載及卸載的第一腔室包括進行該基板的裝載及卸載的上部的第一空間和形成於該第一空間下部的第二空間，在該第一空間和該第二空間彼此隔離的狀態下進行該基板的裝載及卸載，如果該平台和轉盤環藉由該平台驅動部而一起向上方向移動，則該轉盤環緊貼於配備在該第一空間和該第二空間的邊界的薄片部，從而該第一空間和該第二空間被隔離。
  3. 根據請求項2所述的基板處理裝置，其中配備有環分離部件，當在該轉盤環緊貼於該薄片部的狀態下該平台藉由該平台驅動部而下降時，該環分離部件對該轉盤環施加向下方向的力。
  4. 根據請求項3所述的基板處理裝置，其中該環分離部件的下端部沿上下方向貫通該薄片部，貫通的該下端部接觸於該轉盤環的上表面而施加該向下方向的力。
  5. 根據請求項2所述的基板處理裝置，其中該轉盤環的上表面與該薄片部之間配備有用於維持氣密的第一密封部件，該轉盤環的底面與該平台的邊緣位置部上表面之間配備有用於維持氣密的第二密封部件。
  6. 根據請求項1所述的基板處理裝置，其中該等腔室包括： 第一腔室，進行該基板的裝載和卸載； 多個熱處理腔室，用於移送裝載在該第一腔室的該基板並對裝載在該第一腔室的基板依次進行熱處理，在該等熱處理腔室中經過熱處理的該基板在移送到該第一腔室而被冷卻之後被卸載。
  7. 根據請求項1所述的基板處理裝置，其中該等腔室包括： 第一腔室，進行該基板的裝載和卸載； 多個熱處理腔室，用於移送裝載在該第一腔室的該基板並對裝載在該第一腔室的基板依次進行熱處理，該等熱處理腔室中的每一個分別配備有隔壁，該隔壁在處理移送到各自的腔室內部的該基板期間，為了使各個腔室內部空間與其他腔室的空間隔離或連通而移動。
  8. 根據請求項7所述的基板處理裝置，其中該隔壁以上下升降的方式配備，該隔壁下降而接觸到位於該等熱處理腔室中的每一個的該轉盤環的上表面，該轉盤環的底面接觸並支撐於轉盤環支撐部。
TW109139616A 2019-12-23 2020-11-13 基板處理裝置 TWI748746B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0173395 2019-12-23
KR1020190173395A KR102259121B1 (ko) 2019-12-23 2019-12-23 기판처리장치

Publications (2)

Publication Number Publication Date
TW202125683A true TW202125683A (zh) 2021-07-01
TWI748746B TWI748746B (zh) 2021-12-01

Family

ID=76375698

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109139616A TWI748746B (zh) 2019-12-23 2020-11-13 基板處理裝置

Country Status (3)

Country Link
KR (1) KR102259121B1 (zh)
CN (1) CN113097113B (zh)
TW (1) TWI748746B (zh)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3799336B2 (ja) * 2003-05-12 2006-07-19 キヤノンアネルバ株式会社 基板処理装置におけるリングチャックの取り扱い方法
JP5280964B2 (ja) * 2008-09-04 2013-09-04 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及び記憶媒体
US9297072B2 (en) * 2008-12-01 2016-03-29 Tokyo Electron Limited Film deposition apparatus
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
KR101406172B1 (ko) * 2013-01-08 2014-06-12 (주)에스티아이 반도체 웨이퍼의 연속 처리 장치 및 방법
KR101491992B1 (ko) * 2013-01-08 2015-02-10 (주)에스티아이 반도체 웨이퍼의 연속 처리방법
DE102014114947A1 (de) * 2014-05-16 2015-11-19 Aixtron Se Vorrichtung zum Abscheiden von Halbleiterschichten sowie einen Suszeptor zur Verwendung in einer derartigen Vorrichtung
US10591182B2 (en) * 2015-03-31 2020-03-17 Lam Research Corporation Apparatus for thermal control of tubing assembly and associated methods
KR101796647B1 (ko) * 2016-05-03 2017-11-10 (주)에스티아이 기판처리장치 및 기판처리방법
US9892956B1 (en) * 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
KR101921597B1 (ko) * 2016-12-16 2018-11-26 (주)에스티아이 기판의 연속 처리 장치 및 방법

Also Published As

Publication number Publication date
CN113097113B (zh) 2023-12-05
KR102259121B1 (ko) 2021-06-01
CN113097113A (zh) 2021-07-09
TWI748746B (zh) 2021-12-01

Similar Documents

Publication Publication Date Title
JP4048387B2 (ja) ロードロック機構及び処理装置
JP4203206B2 (ja) 基板処理装置
CN107342243B (zh) 基板处理装置及基板处理方法
KR101921597B1 (ko) 기판의 연속 처리 장치 및 방법
KR20100126545A (ko) 프로세싱 챔버
TW202303672A (zh) 電漿處理系統及環狀構件的安裝方法
KR101770221B1 (ko) 기판지지장치
TWI748746B (zh) 基板處理裝置
JP2020181886A (ja) 基板処理装置、及び基板処理方法
TWI759907B (zh) 基板處理裝置
CN210805713U (zh) 加热装置
CN111863699B (zh) 承载装置及工艺腔室
KR20040103714A (ko) 기판의 로딩 장치 및 이를 이용한 기판의 로딩 방법
CN111048444A (zh) 加热板冷却方法和基板处理装置及方法
TW202115825A (zh) 基板處理裝置
TW202002098A (zh) 製程反應腔體
KR20200117242A (ko) 기판처리장치 및 기판처리방법
CN111834252B (zh) 基板处理装置
JP2002025904A (ja) 加熱処理装置及び基板処理装置
JP2022550898A (ja) 搬送チャンバおよびエピタキシャル反応器を有する処理装置
KR101261291B1 (ko) 대면적 기판의 포토레지스트 건조장치
JP4015818B2 (ja) 半導体製造装置
JP2009224423A (ja) 基板処理装置
KR102235493B1 (ko) 기판처리장치
JP2022550902A (ja) 貯蔵チャンバおよびエピタキシャル反応器を有する処理装置