JP2020181886A - 基板処理装置、及び基板処理方法 - Google Patents
基板処理装置、及び基板処理方法 Download PDFInfo
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Abstract
Description
基板処理システムは、基板を真空処理する真空処理チャンバと、基板を加熱及び冷却する基板処理装置とを有し、真空処理チャンバと基板処理装置との間で基板を搬送することで、基板に対して真空処理、加熱処理及び冷却処理を含む処理サイクルを繰り返し行う。一実施形態に係る基板処理装置は、基板加熱領域及び基板冷却領域を含むチャンバを有し、基板加熱領域において基板を加熱し、基板加熱領域において基板が加熱されている間に基板冷却領域において他の基板を冷却する。一実施形態においては、基板加熱領域と基板冷却領域とは隔壁により熱的及び圧力的に分離される。
図2は、一実施形態に係る基板処理装置30の一例を示す斜視図である。図3は、上方から見た場合の基板処理装置30の一例を示す平面図である。なお、図2及び図3では、説明の便宜上、基板処理装置30の上部部材31b(図1参照)が省略されている。図2及び図3に示す基板処理装置30は、主として、チャンバ31、搬送機構32、隔壁P及び制御部81を有する。
次に、チャンバ31に含まれる第1領域R1の第1分割領域R1aの一例について説明する。図4は、チャンバ31に含まれる第1領域R1の第1分割領域R1aの一例を示す模式断面図である。図4は、図3のIV−IV線における断面に相当する。図4に示すように、チャンバ31の上部部材31bのうち第1分割領域R1aに対応する部分には、昇温機構33が配置される。昇温機構33は、回転台32aの回転が停止された状態で、上部部材31b側からウエハWを昇華温度まで昇温する。昇温機構33は、LEDヒータ33aと、LEDヒータ33aを上部部材31bに固定する固定部材33bとを有する。LEDヒータ33aは、特定の波長を有する光を放射する。特定の波長を有する光とは、例えば、赤外線である。LEDヒータ33aから放射された光は、上部部材31bに設けられた透過窓部材31dを透過して、第1分割領域R1aにおいてウエハWに照射される。これにより、ウエハWが昇華温度まで昇温される。LEDヒータ33aは、放射源の一例である。
次に、チャンバ31に含まれる第2領域R2の一例について説明する。図5及び図6は、チャンバ31に含まれる第2領域R2の一例を示す模式断面図である。図5は、図3のV−V線における断面に相当する。図5及び図6に示すように、チャンバ31の第2領域R2には、ウエハWを冷却するための冷却板37と、ウエハWの冷却時にウエハWを密閉するための密閉部38とが配置される。
図8〜図12は、一実施形態に係る基板処理装置30の処理動作の一例について説明するための図である。基板処理装置30は、複数のCORチャンバ11でCOR処理が施された複数のウエハWがVTMアーム25によってチャンバ31へ順次搬送される場合に、複数のウエハWに対して加熱処理及び冷却処理を連続的に実行する。一実施形態においては、基板処理装置30は、基板加熱領域において複数のウエハWの少なくとも一つである第1のウエハを加熱し、第1のウエハが加熱されている間に、基板冷却領域において複数のウエハWの少なくとも他の一つである第2のウエハを冷却する。以下の説明では、COR処理が施された2枚のウエハ#1,#2が第2のウエハに相当し、COR処理が施された2枚のウエハ#3,#4が第1のウエハに相当するものとする。
以上説明したように、上記実施形態に係る基板処理装置は、チャンバと、加熱機構と、冷却機構と、隔壁と、を有する。チャンバは、少なくとも一つの基板加熱領域及び少なくとも一つの基板冷却領域を含むチャンバを有する。加熱機構は、少なくとも一つの基板加熱領域において第1の基板を加熱するように構成される。冷却機構は、第1の基板を加熱している間に、少なくとも一つの基板冷却領域において第2の基板を冷却するように構成される。隔壁は、チャンバ内に設けられ、少なくとも一つの基板加熱領域と少なくとも一つの基板冷却領域とを熱的及び圧力的に分離するように構成される。このため、実施形態に係る基板処理装置は、1つのチャンバ内で基板に対して加熱処理及び冷却処理を実行することができる。基板処理システムにおいて加熱処理チャンバと冷却処理チャンバとが別個に設けられる場合、加熱処理チャンバと冷却処理チャンバとの間での基板の搬送に時間がかかるため、基板処理システムのスループットが低下する。上記実施形態に係る基板処理装置は、1つのチャンバ内で隔壁により熱的及び圧力的に分離された基板加熱領域及び基板冷却領域において、基板に対して加熱処理及び冷却処理を連続的に実行する。このため、本実施形態によれば、異なるチャンバ間での基板の搬送を省略することができ、基板処理システムのスループットを向上させることができる。
31 チャンバ
31c 基板搬送口
32 搬送機構
32a 回転台(保持部)
32b 回転機構
33 昇温機構(加熱機構)
33a LEDヒータ(放射源)
34、35 保温機構(加熱機構)
36 位置合わせ機構
37 冷却板(冷却機構)
38 密閉部
38a 上側可動部材(第1の可動部材)
38b 下側可動部材(第2の可動部材)
38a−1、38b−1 シール部材
P 隔壁
R1 第1領域(基板加熱領域)
R1a 第1分割領域(基板昇温領域)
R1b 第2分割領域(基板保温領域)
R1c 第3分割領域(基板保温領域)
R2 第2領域(基板冷却領域)
Claims (11)
- 少なくとも一つの基板加熱領域及び少なくとも一つの基板冷却領域を含むチャンバを有するチャンバと、
前記少なくとも一つの基板加熱領域において第1の基板を加熱するように構成された加熱機構と、
第1の基板を加熱している間に、前記少なくとも一つの基板冷却領域において第2の基板を冷却するように構成された冷却機構と、
前記チャンバ内に設けられ、前記少なくとも一つの基板加熱領域と前記少なくとも一つの基板冷却領域とを熱的及び圧力的に分離するように構成された隔壁と、
を有する、基板処理装置。 - 前記少なくとも一つの基板冷却領域内に設けられ、基板の冷却時に基板を密閉するように構成される密閉部をさらに有する、請求項1に記載の基板処理装置。
- 前記少なくとも一つの基板加熱領域と前記少なくとも一つの基板冷却領域との間で基板を搬送するように構成された搬送機構をさらに有し、
前記密閉部は、第1の可動部材と第2の可動部材を含み、前記第1の可動部材及び前記第2の可動部材は、前記冷却機構による基板の冷却時に互いに接近して基板を密閉するように構成され、前記搬送機構による基板の搬送時に互いに離間して密閉を解除するように構成される、請求項2に記載の基板処理装置。 - 前記搬送機構は、複数の基板を保持するように構成された保持部と、前記保持部を回転させるように構成された回転機構とを含む、請求項3に記載の基板処理装置。
- 前記第1の可動部材及び前記第2の可動部材は、前記保持部と対向する端面にシール部材を有し、前記冷却機構による基板の冷却時に互いに接近し且つ前記シール部材を前記保持部に接触させることで、基板を密閉するように構成される、請求項4に記載の基板処理装置。
- 前記少なくとも一つの基板加熱領域は、少なくとも一つの基板昇温領域及び少なくとも一つの基板保温領域を含み、
前記加熱機構は、前記少なくとも一つの基板昇温領域において基板を昇華温度まで昇温するように構成された昇温機構と、前記少なくとも一つの基板保温領域において基板を前記昇華温度に維持するように構成された保温機構とを含む、請求項1〜5のいずれか一つに記載の基板処理装置。 - 前記昇温機構は、特定の波長を有する光を放射する放射源を含み、請求項6に記載の基板処理装置。
- 前記保温機構は、抵抗加熱要素、特定の波長を有する光を放射する放射源、及び加熱気体供給要素の少なくともいずれか一つを含む、請求項6又は7に記載の基板処理装置。
- 前記昇温機構、前記保温機構、及び前記冷却機構を同時に動作させるように構成された制御部を有する、請求項6〜8のいずれか一つに記載の基板処理装置。
- 前記チャンバは、外部と基板の受け渡しを行う基板搬送口を有し、前記基板搬送口は、前記少なくとも一つの基板冷却領域内に設けられる、請求項1〜9のいずれか一つに記載の基板処理装置。
- 少なくとも一つの基板加熱領域及び少なくとも一つの基板冷却領域を含むチャンバを有するチャンバにおいて基板を処理する基板処理方法であって、前記チャンバは、前記少なくとも一つの基板加熱領域と前記少なくとも一つの基板冷却領域とを熱的及び圧力的に分離するように構成された隔壁を有し、当該基板処理方法は、
前記少なくとも一つの基板加熱領域及び前記少なくとも一つの基板冷却領域を第1の圧力に調節する工程と、
前記少なくとも一つの基板冷却領域の圧力が前記少なくとも一つの基板加熱領域の圧力よりも高くなるように、前記少なくとも一つの基板加熱領域又は前記少なくとも一つの基板冷却領域を前記第1の圧力から第2の圧力に調節する工程と、
第1の基板を前記少なくとも一つの基板加熱領域に搬送する工程と、
第2の基板を前記少なくとも一つの基板冷却領域に搬送する工程と、
前記少なくとも一つの基板加熱領域において第1の基板を加熱する工程と、
第1の基板を加熱している間に、前記少なくとも一つの基板冷却領域において第2の基板を冷却する工程と、
を有する、基板処理方法。
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