TW202119376A - Flexible device array substrate and manufacturing method of flexible device array substrate - Google Patents
Flexible device array substrate and manufacturing method of flexible device array substrate Download PDFInfo
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本發明是有關於一種元件陣列基板以及元件陣列基板的製作方法,且特別是有關於一種柔性元件陣列基板以及柔性元件陣列基板的製作方法。The present invention relates to an element array substrate and a manufacturing method of the element array substrate, and particularly relates to a flexible element array substrate and a manufacturing method of the flexible element array substrate.
一般而言,可彎折的柔性顯示面板的製作方法具有:柔性元件陣列基板製程、以及模組製程。Generally speaking, the manufacturing method of a bendable flexible display panel includes a flexible element array substrate manufacturing process and a module manufacturing process.
柔性元件陣列基板製程包含以下的步驟。首先,提供玻璃載板。接著,在玻璃載板上形成柔性基底,如聚醯亞胺(polyimide, PI)基底。繼之,在柔性基底上形成阻絕層(barrier layer)。之後,在阻絕層上,依序形成電子元件層、顯示元件層(display element layer)、光學膠層(optical clear adhesive layer, OCA layer)與蓋透鏡層(cover lens layer)。最後,利用雷射剝離法(laser lift off)或機械剝離法(mechanical debonding),將玻璃載板從柔性基底進行剝離,至此,可得到由柔性基底、阻絕層、電子元件層、顯示元件層、光學膠層與蓋透鏡層所組成的柔性元件陣列基板。The manufacturing process of the flexible device array substrate includes the following steps. First, provide a glass carrier. Next, a flexible substrate, such as a polyimide (PI) substrate, is formed on the glass carrier. Then, a barrier layer is formed on the flexible substrate. Then, on the barrier layer, an electronic element layer, a display element layer (display element layer), an optical clear adhesive layer (OCA layer) and a cover lens layer are sequentially formed. Finally, use laser lift off or mechanical debonding to peel the glass carrier from the flexible substrate. At this point, the flexible substrate, barrier layer, electronic component layer, display component layer, A flexible element array substrate composed of an optical glue layer and a cover lens layer.
另外,模組製程包含以下的步驟。首先,將上述的柔性元件陣列基板的柔性基底的一側,依序設置感壓膠(pressure sensitive adhesive, PSA)與背面箔(back foil, BF)。之後,在背面箔的一側,再依序設置感壓膠及不鏽鋼箔(stainless foil, SUS foil),藉由不鏽鋼箔的設置,使柔性元件陣列基板具有可彎折的韌性。In addition, the module manufacturing process includes the following steps. First, a pressure sensitive adhesive (PSA) and a back foil (BF) are sequentially arranged on one side of the flexible base of the aforementioned flexible element array substrate. After that, pressure sensitive adhesive and stainless steel foil (SUS foil) are arranged in sequence on one side of the back foil. The arrangement of the stainless steel foil enables the flexible element array substrate to have bendable toughness.
然而,在上述的柔性元件陣列基板的製程中,在將玻璃載板從柔性基底進行剝離的過程中,由於應力不均勻的關係,使得柔性元件陣列基板容易產生碎裂。再者,由於柔性元件陣列基板的多個膜層的結構並沒有抗裂的效果,所以,在多個膜層的內部中容易產生缺陷(defect),而會造成氣泡、裂痕或剝離的現象。However, in the above-mentioned manufacturing process of the flexible element array substrate, in the process of peeling the glass carrier board from the flexible base, the flexible element array substrate is prone to cracks due to uneven stress. Furthermore, since the structure of the multiple film layers of the flexible element array substrate has no anti-cracking effect, defects are likely to occur in the inside of the multiple film layers, which may cause bubbles, cracks or peeling.
本發明提供一種柔性元件陣列基板以及柔性元件陣列基板的製作方法,能提供具有良好結構的柔性元件陣列基板。The invention provides a flexible element array substrate and a manufacturing method of the flexible element array substrate, which can provide a flexible element array substrate with a good structure.
本發明提出一種柔性元件陣列基板,包括:基板、含金屬層、以及電子元件層。含金屬層設置於基板上。含金屬層包括:第一層,位於靠近基板的一側,第一層含有第一金屬氧化物,以在第一層中形成剝離界面;及第二層,位於遠離基板的一側,第二層含有第二金屬氧化物,其中,第二金屬氧化物中的金屬的氧化價數,小於第一金屬氧化物中的金屬的氧化價數。電子元件層設置於含金屬層的上方。The present invention provides a flexible element array substrate, including: a substrate, a metal-containing layer, and an electronic element layer. The metal-containing layer is disposed on the substrate. The metal-containing layer includes: a first layer located on the side close to the substrate, the first layer containing a first metal oxide to form a peeling interface in the first layer; and a second layer located on the side away from the substrate, the second layer The layer contains a second metal oxide, wherein the oxidation number of the metal in the second metal oxide is smaller than the oxidation number of the metal in the first metal oxide. The electronic element layer is arranged above the metal-containing layer.
在本發明的一實施例中,含金屬層的金屬是選自於:鉬(Mo)、釩(V)、鈮(Nb)、鉭(Ta)、鎢(W)、錸(Re)、鉻(Cr)及其組合。In an embodiment of the present invention, the metal of the metal-containing layer is selected from: molybdenum (Mo), vanadium (V), niobium (Nb), tantalum (Ta), tungsten (W), rhenium (Re), chromium (Cr) and combinations thereof.
在本發明的一實施例中,含金屬層包括:單層結構。In an embodiment of the present invention, the metal-containing layer includes a single-layer structure.
在本發明的一實施例中,含金屬層包括:多層結構。In an embodiment of the present invention, the metal-containing layer includes: a multilayer structure.
在本發明的一實施例中,第二層含有氧化價數為零的金屬。In an embodiment of the present invention, the second layer contains a metal with zero oxidation valence.
在本發明的一實施例中,更包括:阻絕層,設置於含金屬層與電子元件層之間。In an embodiment of the present invention, it further includes: a barrier layer disposed between the metal-containing layer and the electronic component layer.
在本發明的一實施例中,更包括:柔性層,設置於阻絕層與含金屬層之間。In an embodiment of the present invention, it further includes: a flexible layer disposed between the barrier layer and the metal-containing layer.
在本發明的一實施例中,更包括:顯示元件層,設置於電子元件層上。顯示元件層包括:彼此相鄰設置的第一發光元件、第二發光元件與第三發光元件。In an embodiment of the present invention, it further includes: a display element layer disposed on the electronic element layer. The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element that are arranged adjacent to each other.
在本發明的一實施例中,更包括:光學膠層,設置於顯示元件層上;以及蓋透鏡層,設置於光學膠層上。In an embodiment of the present invention, it further includes: an optical glue layer, which is arranged on the display element layer; and a cover lens layer, which is arranged on the optical glue layer.
本發明提出一種柔性元件陣列基板的製作方法,包括:提供基板;於基板上形成含金屬層;提供熱製程,使含金屬層形成第一層與第二層,第一層位於靠近基板的一側,第一層含有第一金屬氧化物,以在第一層中形成一剝離界面,第二層位於遠離基板的一側,第二層含有第二金屬氧化物,其中,第二金屬氧化物中的金屬的氧化價數,小於第一金屬氧化物中的金屬的氧化價數;於含金屬層的上方形成電子元件層;以及進行剝離動作,通過剝離界面,而分離一部分的第一層與基板。The present invention provides a method for manufacturing a flexible element array substrate, which includes: providing a substrate; forming a metal-containing layer on the substrate; providing a thermal process so that the metal-containing layer forms a first layer and a second layer. The first layer is located near the substrate. Side, the first layer contains a first metal oxide to form a peeling interface in the first layer, the second layer is located on the side away from the substrate, and the second layer contains a second metal oxide, wherein the second metal oxide The oxidation number of the metal in the metal oxide is smaller than the oxidation number of the metal in the first metal oxide; the electronic component layer is formed on the metal-containing layer; and the peeling action is performed to separate a part of the first layer and the first layer by peeling off the interface. Substrate.
在本發明的一實施例中,含金屬層的金屬是選自於:鉬、釩、鈮、鉭、鎢、錸、鉻及其組合。In an embodiment of the present invention, the metal of the metal-containing layer is selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.
在本發明的一實施例中,含金屬層包括:單層結構。In an embodiment of the present invention, the metal-containing layer includes a single-layer structure.
在本發明的一實施例中,含金屬層包括:多層結構。In an embodiment of the present invention, the metal-containing layer includes: a multilayer structure.
在本發明的一實施例中,第二層含有氧化價數為零的金屬。In an embodiment of the present invention, the second layer contains a metal with zero oxidation valence.
在本發明的一實施例中,更包括:於含金屬層與電子元件層之間,形成一阻絕層。In an embodiment of the present invention, it further includes: forming a barrier layer between the metal-containing layer and the electronic component layer.
在本發明的一實施例中,更包括:於電子元件層上,形成顯示元件層。顯示元件層包括:彼此相鄰設置的第一發光元件、第二發光元件與第三發光元件。In an embodiment of the present invention, it further includes: forming a display element layer on the electronic element layer. The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element that are arranged adjacent to each other.
在本發明的一實施例中,更包括:於顯示元件層上,依序形成光學膠層與蓋透鏡層。In an embodiment of the present invention, it further includes: sequentially forming an optical adhesive layer and a cover lens layer on the display element layer.
在本發明的一實施例中,熱製程的溫度範圍是350°C到650°C。In an embodiment of the present invention, the temperature range of the thermal process is 350°C to 650°C.
在本發明的一實施例中,熱製程的溫度範圍是500°C到650°C。In an embodiment of the present invention, the temperature range of the thermal process is 500°C to 650°C.
在本發明的一實施例中,熱製程是在形成電子元件層的步驟之前執行。In an embodiment of the present invention, the thermal process is performed before the step of forming the electronic component layer.
在本發明的一實施例中,熱製程是在形成電子元件層的步驟中執行。In an embodiment of the present invention, the thermal process is performed in the step of forming the electronic component layer.
在本發明的一實施例中,在形成電子元件層的步驟之前,更包括進行快速熱退火製程。In an embodiment of the present invention, before the step of forming the electronic device layer, a rapid thermal annealing process is further included.
在本發明的一實施例中,在剝離動作之後,至少於柔性元件陣列基板的彎折區留下第二層的圖案。In an embodiment of the present invention, after the peeling action, the pattern of the second layer is left at least in the bending area of the flexible element array substrate.
在本發明的一實施例中,更包括:於第二層的圖案上,形成增厚圖案層。In an embodiment of the present invention, it further includes: forming a thickened pattern layer on the pattern of the second layer.
本發明還提出一種柔性元件陣列基板,具有顯示區、與位於顯示區的一側的彎折區。柔性元件陣列基板包括:第一膜層、含金屬層以及電子元件層。含金屬層設置在第一膜層的第一面,且含金屬層至少位於彎折區。電子元件層設置在第一膜層的第二面,第二面與第一面彼此相對。The present invention also provides a flexible element array substrate having a display area and a bending area located on one side of the display area. The flexible element array substrate includes: a first film layer, a metal-containing layer, and an electronic element layer. The metal-containing layer is arranged on the first surface of the first film layer, and the metal-containing layer is located at least in the bending area. The electronic element layer is arranged on the second surface of the first film layer, and the second surface and the first surface are opposite to each other.
在本發明的一實施例中,更包括:顯示元件層,設置於電子元件層上。顯示元件層包括:彼此相鄰設置的第一發光元件、第二發光元件與第三發光元件。In an embodiment of the present invention, it further includes: a display element layer disposed on the electronic element layer. The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element that are arranged adjacent to each other.
在本發明的一實施例中,更包括:光學膠層,設置於顯示元件層上;以及蓋透鏡層,設置於光學膠層上。In an embodiment of the present invention, it further includes: an optical glue layer, which is arranged on the display element layer; and a cover lens layer, which is arranged on the optical glue layer.
在本發明的一實施例中,含金屬層包括:彼此連接的第一部分與第二部分。第一部分設置於顯示區中。第二部分設置於彎折區中。在本發明的一實施例中,更包括:增厚圖案層,設置於含金屬層上。In an embodiment of the present invention, the metal-containing layer includes: a first part and a second part connected to each other. The first part is set in the display area. The second part is arranged in the bending area. In an embodiment of the present invention, it further includes: a thickening pattern layer disposed on the metal-containing layer.
在本發明的一實施例中,含金屬層包括:彼此分離的第一部分與第二部分。第一部分設置於顯示區中。第二部分設置於彎折區中。在本發明的一實施例中,更包括:增厚圖案層,設置於該含金屬層的該第一部分上。In an embodiment of the present invention, the metal-containing layer includes: a first part and a second part separated from each other. The first part is set in the display area. The second part is arranged in the bending area. In an embodiment of the present invention, it further includes: a thickening pattern layer disposed on the first part of the metal-containing layer.
在本發明的一實施例中,第一膜層包括:彎折部。含金屬層設置於彎折部上。彎折部的彎折方向,與第一發光元件、第二發光元件和第三發光元件的出光方向相反。在本發明的一實施例中,更包括:增厚圖案層,設置在位於彎折部的含金屬層上。In an embodiment of the present invention, the first film layer includes: a bent portion. The metal-containing layer is arranged on the bending part. The bending direction of the bending portion is opposite to the light emitting direction of the first light emitting element, the second light emitting element, and the third light emitting element. In an embodiment of the present invention, it further includes: a thickening pattern layer, which is disposed on the metal-containing layer at the bent portion.
在本發明的一實施例中,含金屬層的圖案,對應於第一發光元件、第二發光元件與第三發光元件之間的間隔而設置。在本發明的一實施例中,更包括:增厚圖案層,設置在含金屬層的圖案上。In an embodiment of the present invention, the pattern of the metal-containing layer is provided corresponding to the interval between the first light-emitting element, the second light-emitting element, and the third light-emitting element. In an embodiment of the present invention, it further includes: a thickening pattern layer disposed on the pattern of the metal-containing layer.
在本發明的一實施例中,更包括:第二膜層,承載顯示元件層;彩色濾光圖案層,對應於顯示元件層而設置,彩色濾光圖案層包括:彼此相鄰設置的第一濾光圖案、第二濾光圖案與第三濾光圖案;以及增厚圖案層,設置在位於第一膜層的彎折部的含金屬層上;其中,彩色濾光圖案層位於第一膜層與第二膜層之間,第一膜層與該第二膜層為柔性基底。In an embodiment of the present invention, it further includes: a second film layer, which carries the display element layer; a color filter pattern layer, which is provided corresponding to the display element layer, and the color filter pattern layer includes: first layers arranged adjacent to each other. The filter pattern, the second filter pattern, and the third filter pattern; and the thickening pattern layer, which is disposed on the metal-containing layer at the bent portion of the first film layer; wherein, the color filter pattern layer is located on the first film Between the layer and the second film layer, the first film layer and the second film layer are flexible substrates.
基於上述,本發明實施例的柔性元件陣列基板與柔性元件陣列基板的製作方法,經由熱製程,在基板與含金屬層的金屬之間,形成了具有高氧化價數的金屬氧化層的膜層,進而,在此膜層中形成剝離界面。通過此剝離界面,可容易地分離一部分的第一層與基板,而可將含金屬層的第二層及其上方的電子元件層一起輕鬆取下,進而,能夠提高柔性元件陣列基板的製作良率,並得到具有良好的韌性的提高柔性元件陣列基板。Based on the above, the flexible element array substrate and the method for manufacturing the flexible element array substrate of the embodiments of the present invention form a film layer of a metal oxide layer with a high oxidation number between the substrate and the metal containing the metal layer through a thermal process. , And further, a peeling interface is formed in this film layer. Through this peeling interface, a part of the first layer and the substrate can be easily separated, and the second layer containing the metal layer and the electronic component layer above it can be easily removed together, thereby improving the manufacturing quality of the flexible device array substrate. And obtain a flexible element array substrate with improved toughness.
再者,本發明的柔性元件陣列基板以及柔性元件陣列基板的製作方法,可以對含金屬層進行進一步的處理(例如圖案化製程、增厚製程等),進而,能夠提升柔性元件陣列基板的光穿透強度、保護性、韌性及撓曲性,還能夠針對需要結構性保護或電磁屏蔽保護的區域,進行局部的金屬層的增厚。Furthermore, the flexible element array substrate and the manufacturing method of the flexible element array substrate of the present invention can perform further processing (such as patterning process, thickening process, etc.) on the metal-containing layer, and further, can improve the light of the flexible element array substrate. Penetration strength, protection, toughness and flexibility, and can also be targeted at areas requiring structural protection or electromagnetic shielding protection, localized thickening of the metal layer.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施方式,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1A~圖1C是本發明的實施例的柔性元件陣列基板的剖面示意圖。在圖1A~圖1C的實施例中,將相同的元件,標示以相同的元件符號,以進行相關的說明。1A to 1C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. In the embodiments of FIGS. 1A to 1C, the same components are labeled with the same component symbols for related description.
請參照圖1A,此實施例的柔性元件陣列基板100包括:基板110、含金屬層120、以及電子元件層130。含金屬層120設置於基板110上。含金屬層120包括:第一層122與第二層124。第一層122位於靠近基板110的一側。第一層122含有第一金屬氧化物122A,以在第一層122中形成剝離界面F。第二層124位於遠離基板110的一側。第二層124含有第二金屬氧化物124A。第二金屬氧化物124A中的金屬的氧化價數,小於第一金屬氧化物122A中的金屬的氧化價數。電子元件層130設置於含金屬層120的上方。1A, the flexible
請參照圖1A,基板110可以是玻璃基板、或是沉積有氧化物層的非玻璃基板(氧化物層的作用是用來提供氧原子)。在基板110使用玻璃基板的例子中,由於玻璃的主要成分是二氧化矽,所以,二氧化矽也能夠提供氧原子,使得含金屬層120的金屬能夠與氧原子進行氧化作用。1A, the
含金屬層120的金屬可以是:具有多重氧化態的過渡金屬。在一實施例中,含金屬層120的金屬是選自於:鉬、釩、鈮、鉭、鎢、錸、鉻及其組合。詳細而言,含金屬層120的金屬可以採用:金屬鉬(Mo)、或是與鉬相近的高溫金屬、或是具有“酸性金屬氧化物的金屬”,如:釩、鈮、鉭、鎢、錸、鉻。The metal of the metal-containing
請參照圖1A,第一層122含有第一金屬氧化物122A。此第一金屬氧化物122A為高氧化價數的金屬氧化物,由於其內聚力(cohesion force)較弱,進而,在第一層122中會形成剝離界面F。通過此剝離界面F,能夠容易地使第一層122進行層間分離,而能夠容易地分離一部分的第一層122與基板110。如此一來,可減少剝離動作的應力對於柔性元件陣列基板100中的膜層的影響,而減少膜層的碎裂。另外,第二層124可含有氧化價數為零的金屬,也就是說,第二層124可包含:還沒有與氧原子進行反應的金屬。1A, the
請參照圖1A,電子元件層130可以是主動元件陣列層。主動元件例如可以是薄膜電晶體或是其他適合的開關元件,在此並不予以限制。1A, the
請參照圖1B,此實施例的柔性元件陣列基板101還可包括:阻絕層140,設置於含金屬層120與電子元件層130之間。阻絕層140可以使用氮氧化物的無機層堆疊。藉由阻絕層140的設置,可以隔絕電子元件層130與含金屬層120之間的電性連接,以避免電子元件層130的電性受到含金屬層120的金屬的影響。1B, the flexible
請參照圖1C,此實施例的柔性元件陣列基板102還可包括:柔性層150,設置於阻絕層140與含金屬層120之間。柔性層150的材料可以是聚醯亞胺(polyimide, PI)。藉由柔性層150的設置,可以提升柔性元件陣列基板102的可撓性質。1C, the flexible
圖2是將圖1A的柔性元件陣列基板進行剝離動作的示意圖。請同時參照圖1A與圖2,在電子元件層130完成之後,對於柔性元件陣列基板100施加外力而進行剝離動作S,並且,通過剝離界面F而分離一部分的第一層122與基板110。FIG. 2 is a schematic diagram of peeling the flexible element array substrate of FIG. 1A. 1A and 2 at the same time, after the
在柔性元件陣列基板100的製程中,可對於含金屬層120與基板110的界面給予能量(例如,熱製程),此時,來自於基板110的氧原子,會與含金屬層120進行氧化作用,而在基板110與含金屬層120之間生成:含有第一金屬氧化物122A的第一層122。In the manufacturing process of the flexible
隨著擴散作用的影響,相對於第一層122而言,位於遠離基板110的一側的第二層124所接收的氧原子會較少;因此,第二層124所含有的第二金屬氧化物124A中的金屬的氧化價數,會小於第一層122的第一金屬氧化物122A中的金屬的氧化價數。並且,第二層124也可含有氧化價數為零的金屬,也就是還沒有與氧原子進行反應的金屬。With the influence of diffusion, compared with the
可注意到,經過熱製程之後,具有高氧化價數的第一金屬氧化物122A的第一層122的內部,由於第一金屬氧化物122A的內聚力降低,而產生能夠容易進行剝離的剝離界面F。也就是說,在利用剝離界面F而分離一部分的第一層122與基板110時,所施加的外力不會影響到電子元件層130,而可提高電子元件層130中的電子元件的製作良率。It can be noticed that after the thermal process, the inside of the
圖3A~圖3H是本發明的實施例的柔性元件陣列基板的製作方法的步驟流程示意圖。3A to 3H are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention.
請先參照圖3A~圖3E,以瞭解本發明的實施例的柔性元件陣列基板101的製作的過程。Please refer to FIGS. 3A to 3E first to understand the manufacturing process of the flexible
請參照圖3A,首先,提供基板110。基板110可以是玻璃基板、或是沉積有氧化物層的非玻璃基板。如上所述,基板110可提供氧原子,以使得後續的含金屬層120的金屬能夠與氧原子進行氧化作用。Referring to FIG. 3A, first, a
請參照圖3B,於基板110上形成含金屬層120。含金屬層120的金屬可以是:具有多重氧化態的過渡金屬。在一實施例中,含金屬層120的金屬可以是選自於:鉬、釩、鈮、鉭、鎢、錸、鉻及其組合。Referring to FIG. 3B, a metal-containing
在一實施例中,含金屬層120的金屬可以是鉬氧化物(MoO),具有二價鉬(Mo2+
)。在另一實施例中,含金屬層120的金屬可以是鉬金屬,具有零價鉬(Mo)。也就是說,含金屬層120可以包含:氧化價數為零的金屬、或是,氧化價數為零的金屬與具有低氧化價數的金屬的金屬氧化物的組合。In an embodiment, the metal of the metal-containing
請參照圖3C,可於含金屬層120上形成阻絕層140。阻絕層140可以使用氮氧化物的無機層堆疊。阻絕層140可以避免:位於下方的含金屬層120,對於後續在上方形成的其他膜層,造成電性上的影響。Referring to FIG. 3C, a
請參照圖3D,提供熱製程H,使含金屬層120形成第一層122與第二層124。第一層122位於靠近基板110的一側。第一層含有第一金屬氧化物122A,以在第一層122中形成剝離界面F。第二層124位於遠離基板110的一側。第二層124含有第二金屬氧化物124A。第二金屬氧化物124A中的金屬的氧化價數,小於第一金屬氧化物122A中的金屬的氧化價數。Referring to FIG. 3D, a thermal process H is provided to form the
請同時參照圖3D與圖3E,可知,熱製程H是在形成電子元件層130的步驟(如後續的圖3E所示)之前執行。熱製程H的溫度範圍可以是350°C到650°C。在另一實施例中,熱製程H的溫度範圍也可以是500°C到650°C。Referring to FIGS. 3D and 3E at the same time, it can be seen that the thermal process H is performed before the step of forming the electronic component layer 130 (as shown in the subsequent FIG. 3E). The temperature range of the thermal process H can be 350°C to 650°C. In another embodiment, the temperature range of the thermal process H may also be 500°C to 650°C.
請參照圖3E,於含金屬層120的上方,形成電子元件層130。電子元件層130可以是主動元件陣列層。主動元件例如可以是薄膜電晶體或是其他適合的開關元件。至此,可製作如圖1B所示的柔性元件陣列基板101。Referring to FIG. 3E, an
另外,請繼續參照圖3A~圖3E、以及圖3F,以瞭解本發明的實施例的柔性元件陣列基板103的製作的過程。In addition, please continue to refer to FIGS. 3A to 3E and FIG. 3F to understand the manufacturing process of the flexible
在經過圖3A~圖3E的步驟之後,如圖3F所示,還可以於電子元件層130上,形成顯示元件層160。顯示元件層160可包括:彼此相鄰設置的第一發光元件162、第二發光元件164與第三發光元件166。至此,完成柔性元件陣列基板103的製作。After the steps of FIGS. 3A to 3E, as shown in FIG. 3F, a
也就是說,請參照圖3F,此實施例的柔性元件陣列基板103還可包括:顯示元件層160,設置於電子元件層130上。顯示元件層160包括:彼此相鄰設置的第一發光元件162、第二發光元件164與第三發光元件166。That is to say, referring to FIG. 3F, the flexible
第一發光元件162可以是紅色發光二極體,第二發光元件164可以是綠色發光二極體,第三發光元件166可以是藍色發光二極體。另外,可以利用柔性封裝(Thin Film Encapsulation, TFE),來將第一發光元件162、第二發光元件164與第三發光元件166進行封裝,而使顯示元件層160具有可彎折的性質。The first light-emitting
另外,請繼續參照圖3A~圖3E、以及圖3F~圖3G,以瞭解本發明的實施例的柔性元件陣列基板104的製作的過程。In addition, please continue to refer to FIGS. 3A to 3E and FIGS. 3F to 3G to understand the manufacturing process of the flexible
在經過圖3A~圖3F的步驟之後,如圖3G所示,還可以於顯示元件層160上,依序形成光學膠層170與蓋透鏡層180。至此,完成柔性元件陣列基板104的製作。After the steps of FIGS. 3A to 3F, as shown in FIG. 3G, an optical
也就是說,請參照圖3G,此實施例的柔性元件陣列基板104還可包括:光學膠層170,設置於顯示元件層160上;以及蓋透鏡層180,設置於光學膠層170上。利用光學膠層170與蓋透鏡層180,可進一步提升顯示元件層160的光學性質,並優化顯示元件層160的顯示效果。That is to say, referring to FIG. 3G, the flexible
請參照圖3H,在完成柔性元件陣列基板104的製作之後,可進一步進行剝離動作S。通過剝離界面F(如圖3G所示),而分離一部分的第一層122與基板110。需注意的是,此剝離動作S也可以在完成如圖3E所示的柔性元件陣列基板101的製作之後進行;或是,此剝離動作S也可以在完成如圖3F所示的柔性元件陣列基板103的製作之後進行。Referring to FIG. 3H, after the fabrication of the flexible
承上述,在本發明的實施例的柔性元件陣列基板100、101、102、103、104的製造方法中,在基板110(例如是玻璃基板)上設置含金屬層120。經由對於基板110與含金屬層120之間的界面進行熱製程H,而形成:第一層122(具有高氧化價數的第一金屬氧化物122A)、與第二層124(具有低氧化價數的第二金屬氧化物122B)。In view of the above, in the method for manufacturing the flexible
由於第一金屬氧化物122A是高氧化價數的金屬氧化物,所以,其內聚力較低,而在第一層122中形成剝離界面F。通過此剝離界面F,而能夠容易地使第一層122進行層間分離。如此一來,能夠容易地分離一部分的第一層122與基板110,而可減少柔性元件陣列基板100、101、102、103、104中的膜層受到剝離應力的影響,可減少膜層的碎裂。Since the
圖4A是含金屬層的金屬為鉬時,自然氧化的鉬金屬的表面的X射線光電子能譜圖。圖4B是含金屬層的金屬為鉬時,位於剝離界面的上方的含金屬層的一部分的第一層的X射線光電子能譜圖。圖4C是含金屬層的金屬為鉬時,位於剝離界面的下方的含金屬層的一部分的第一層的X射線光電子能譜圖。在圖4A~圖4C中,橫軸為結合能(eV),縱軸為計數值/秒。FIG. 4A is an X-ray photoelectron spectrogram of the surface of naturally oxidized molybdenum metal when the metal of the metal-containing layer is molybdenum. 4B is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located above the peeling interface when the metal of the metal-containing layer is molybdenum. 4C is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located below the peeling interface when the metal of the metal-containing layer is molybdenum. In FIGS. 4A to 4C, the horizontal axis is binding energy (eV), and the vertical axis is counts/sec.
請同時參照3B與圖4A,當含金屬層120的金屬是鉬金屬(Mo),具有零價鉬(Mo)時,鉬金屬的表面會自然氧化。如圖4A中的波峰Mo3d3 (MoO3
)、波峰Mo3d5 (MoO3
)所示,可看出,自然氧化的鉬金屬表面的組成是以MoO3
為主。另外,如圖4A中的波峰Mo3d3 (Mo-Mo)、波峰Mo3d5 (Mo-Mo) 所示,可看出,自然氧化的鉬金屬表面的組成還具有鉬金屬。並且,如圖4A中的波峰Mo3d3 (MoO2
)、波峰Mo3d5 (MoO2
)所示,可看出,自然氧化的鉬金屬表面的組成還具有MoO2
。Please refer to 3B and FIG. 4A at the same time. When the metal of the metal-containing
經過計算,波峰Mo3d5 (Mo-Mo)、波峰Mo3d5 (MoO2 )、與波峰Mo3d5 (MoO3 )彼此之間的原子數百分比為28.3%:15.1%:56.6%。After calculation, the atomic percentages between the peak Mo3d5 (Mo-Mo), the peak Mo3d5 (MoO 2 ), and the peak Mo3d5 (MoO 3 ) are 28.3%: 15.1%: 56.6%.
請同時參照圖3G~圖3H與圖4B,對於位於剝離界面F的上方的含金屬層120的一部分的第一層122,進行X射線光電子能譜分析,可得到如圖4B所示的X射線光電子能譜圖。Please refer to FIGS. 3G to 3H and FIG. 4B at the same time. For the
如圖4B中的波峰Mo3d3 (MoO2
)、波峰Mo3d5 (MoO2
)所示,可看出,位於剝離界面F的上方的含金屬層120的一部分的第一層122,其表面的組成是以MoO2
為主。另外,如圖4B中的波峰Mo3d3 (Mo-Mo)、波峰Mo3d5 (Mo-Mo)所示,可看出,位於剝離界面F的上方的含金屬層120的一部分的第一層122,其表面的組成還具有鉬金屬。As shown in the peaks Mo3d3 (MoO 2 ) and Mo3d5 (MoO 2 ) in FIG. 4B, it can be seen that the
經過計算,波峰Mo3d5 (Mo-Mo)與波峰Mo3d5 (MoO2
)彼此之間的原子數百分比為73.2%:26.8%。也就是說,位於剝離界面F的上方的含金屬層120的一部分的第一層122,其組成是:氧化價數為零的金屬、以及低氧化價數的金屬氧化物。After calculation, the atomic percentage between the peak Mo3d5 (Mo-Mo) and the peak Mo3d5 (MoO 2 ) is 73.2%: 26.8%. That is, the
請同時參照圖3G~圖3H與圖4C,對於位於剝離界面F的下方的含金屬層120的一部分的第一層122,進行X射線光電子能譜分析,可得到如圖4C所示的X射線光電子能譜圖。Referring to FIGS. 3G to 3H and 4C at the same time, for the
如圖4C中的波峰Mo3d3 (MoO3
)、波峰Mo3d5 (MoO3
)所示,可看出,位於剝離界面F的下方的含金屬層120的一部分的第一層122,其表面的組成是以MoO3
為主。另外,如圖4C中的波峰Mo3d3 (MoO2
)、波峰Mo3d5 (MoO2
)所示,還可看出,位於剝離界面F的下方的含金屬層120的一部分的第一層122,其表面的組成還具有MoO2
。再者,如圖4C中的波峰Mo3d3 (Mo-Mo)、波峰Mo3d5 (Mo-Mo)所示,還可看出,位於剝離界面F的下方的含金屬層120的一部分的第一層122,其表面的組成還具有極少量的鉬金屬。As shown in the wave peak Mo3d3 (MoO 3 ) and wave peak Mo3d5 (MoO 3 ) in FIG. 4C, it can be seen that the
經過計算,波峰Mo3d5 (Mo-Mo)、波峰Mo3d5 (MoO2
)、與波峰Mo3d5 (MoO3
)彼此之間的原子數百分比為0.6%:24.6%:74.8%。也就是說,位於剝離界面F的下方的含金屬層120的一部分的第一層122,其組成是:高氧化價數的金屬氧化物。After calculation, the atomic percentages between the peak Mo3d5 (Mo-Mo), the peak Mo3d5 (MoO 2 ), and the peak Mo3d5 (MoO 3 ) are 0.6%: 24.6%: 74.8%. In other words, the
從上述的圖3B與圖4A、圖3G~圖3H與圖4B、圖3G~圖3H與圖4C的內容可知,以鉬金屬為例,相較於自然氧化的鉬金屬表面(組成以MoO3
為主),在進行了熱製程H(如圖3D所示)之後,含金屬層120中會形成具有不同氧化價數的鉬氧化物,進而,在含金屬層120中形成剝離界面F。From the above-mentioned figures 3B and 4A, 3G~3H and 4B, 3G~3H and 4C, it can be seen that taking molybdenum metal as an example, compared with the naturally oxidized molybdenum metal surface (the composition is MoO 3 Mainly), after the thermal process H (as shown in FIG. 3D), molybdenum oxides with different oxidation valences are formed in the metal-containing
從圖4B可知,位於剝離界面F的上方的含金屬層120的一部分的第一層122,其表面的組成是以MoO2
為主(低氧化價數的金屬氧化物);並且,從圖4C可知,位於剝離界面F的下方的含金屬層120的一部分的第一層122,其表面的組成是以MoO3
為主(高氧化價數的金屬氧化物)。It can be seen from FIG. 4B that the surface composition of the
以上的圖4A~圖4C僅是以鉬作為含金屬層120的材料為例,而進行說明。在使用其他的過渡金屬(釩、鈮、鉭、鎢、錸、鉻)作為含金屬層120的情況下,也可進行上述X射線光電子能譜的分析,以得知含金屬層120中的各膜層的金屬氧化物的組成狀態。The above FIGS. 4A to 4C only use molybdenum as the material of the metal-containing
圖5繪示了本發明的一實施例的柔性元件陣列基板的電子元件層的閥值電壓的改變(Vth shift)隨著受壓時間(Stress time)而變化的曲線圖、以及習知的使用柔性基底的柔性元件陣列基板的電子元件層的閥值電壓的改變隨著受壓時間而變化的曲線圖。在圖5中,縱軸為閥值電壓的改變,橫軸為受壓時間(秒, sec)。FIG. 5 illustrates a graph of the threshold voltage change (Vth shift) of the electronic device layer of the flexible device array substrate according to an embodiment of the present invention as a function of stress time, and the conventional use A graph showing the change of the threshold voltage of the electronic element layer of the flexible element array substrate of the flexible base with the pressure time. In Figure 5, the vertical axis is the change in threshold voltage, and the horizontal axis is the pressure time (seconds, sec).
請參照圖5,在溫度為60°C,閘極電壓V gate與汲極電壓V drain都為-20V的條件下,在0 sec、10 sec、100 sec、300 sec與1000 sec,各量測一次“閘極電壓對汲極電流(Id-Vg)之特性曲線”。可看出,在本發明的實施例的柔性元件陣列基板中,電子元件層具有穩定的閥值電壓。Please refer to Figure 5, under the condition that the temperature is 60°C, the gate voltage V gate and the drain voltage V drain are both -20V, at 0 sec, 10 sec, 100 sec, 300 sec and 1000 sec, each measurement One time "Gate Voltage vs. Drain Current (Id-Vg) Characteristic Curve". It can be seen that in the flexible element array substrate of the embodiment of the present invention, the electronic element layer has a stable threshold voltage.
相較於本發明的實施例,習知的使用了柔性基底(如,聚醯亞胺PI)的柔性元件陣列基板中,電子元件層的閥值電壓會隨著受壓時間而劇烈變化,具有不穩定的閥值電壓。Compared with the embodiment of the present invention, in the conventional flexible element array substrate using a flexible substrate (for example, polyimide PI), the threshold voltage of the electronic element layer changes drastically with the pressure time. Unstable threshold voltage.
由此可看出,在本發明實施例的柔性元件陣列基板中,電子元件層的主動元件(如薄膜電晶體TFT)的經受壓測試後的電性表現,優於在習知的使用柔性基底(如,聚醯亞胺PI)的柔性元件陣列基板中,電子元件層的主動元件(如薄膜電晶體TFT)的經受壓測試後的電性表現。It can be seen that, in the flexible element array substrate of the embodiment of the present invention, the electrical performance of the active element (such as thin film transistor TFT) of the electronic element layer after the pressure test is better than that of the conventional flexible element array substrate. The electrical performance of the active components of the electronic component layer (such as thin film transistor TFT) in the flexible device array substrate of the base (such as polyimide PI) after undergoing a pressure test.
圖6A~圖6J是本發明的一實施例的柔性元件陣列基板的製作方法的步驟流程示意圖。請參照圖6A,首先,提供基板110。基板110可以是玻璃基板、或是沉積有氧化物層的非玻璃基板。如上所述,基板110可提供氧原子,以使得後續的含金屬層120的金屬能夠與氧原子進行氧化作用。6A to 6J are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention. Referring to FIG. 6A, first, a
請參照圖6B,於基板110上形成含金屬層120。含金屬層120的金屬可以是:具有多重氧化態過渡金屬。在一實施例中,含金屬層120的金屬可以是選自於:鉬、釩、鈮、鉭、鎢、錸、鉻及其組合。6B, a metal-containing
在一實施例中,含金屬層120的金屬可以是鉬氧化物(MoO),具有二價鉬(Mo2+
);在另一實施例中,含金屬層120的金屬也可以是鉬金屬,具有零價鉬(Mo)。也就是說,含金屬層120可以包含:氧化價數為零的金屬、或是,氧化價數為零的金屬與具有低氧化價數的金屬的金屬氧化物的組合。In one embodiment, the metal of the metal-containing
請參照圖6C,可於含金屬層120上形成阻絕層140。阻絕層140可以使用氮氧化物的無機層堆疊。阻絕層140可以避免:位於下方的含金屬層120,對於後續在上方形成的其他膜層,造成電性上的影響。Referring to FIG. 6C, a
請參照圖6D,可注意到,在此實施例中,在形成如圖6E所示的電子元件層130的步驟之前,先進行一快速熱退火製程V。通過此快速熱退火製程V,可以除去各膜層中的氫,有利於提升後續製作的電子元件層130的電子特性。Referring to FIG. 6D, it can be noted that in this embodiment, before the step of forming the
請參照圖6E,可注意到,在此實施例中,熱製程H是在形成電子元件層130的步驟中執行。此電子元件層130例如可以是低溫多晶矽(Low Temperature Poly-Silicon, LTPS)薄膜電晶體的元件層。也就是說,利用形成電子元件層130時本身的加熱步驟,同時對於含金屬層120進行加熱。6E, it can be noted that in this embodiment, the thermal process H is performed in the step of forming the
如此一來,可使含金屬層120與來自基板110的氧原子進行氧化反應,而形成第一層122與第二層124。第一層122位於靠近基板110的一側。第一層含有第一金屬氧化物122A,以在第一層122中形成剝離界面F。第二層124位於遠離基板110的一側。第二層124含有第二金屬氧化物124A。第二金屬氧化物124A中的金屬的氧化價數,小於第一金屬氧化物122A中的金屬的氧化價數。至此,可製作如圖6E所示的柔性元件陣列基板101。In this way, the metal-containing
同樣地,熱製程H的溫度範圍可以是350°C到650°C。在另一實施例中,熱製程H的溫度範圍也可以是500°C到650°C。在圖6A~圖6E的實施例中,可以節省熱製程H的實施步驟,進一步簡化柔性元件陣列基板101的製作過程。Similarly, the temperature range of the thermal process H can be 350°C to 650°C. In another embodiment, the temperature range of the thermal process H may also be 500°C to 650°C. In the embodiment of FIG. 6A to FIG. 6E, the implementation steps of the thermal process H can be saved, and the manufacturing process of the flexible
另外,請參照圖6A~圖6E、以及圖6F,以瞭解本發明的實施例的柔性元件陣列基板103的製作的過程。In addition, please refer to FIGS. 6A to 6E and FIG. 6F to understand the manufacturing process of the flexible
在經過圖6A~圖6E的步驟之後,如圖6F所示,還可以於電子元件層130上,形成顯示元件層160。顯示元件層160可包括:彼此相鄰設置的第一發光元件162、第二發光元件164與第三發光元件166。至此,完成柔性元件陣列基板103的製作。關於顯示元件層160的技術內容,已記載於上述圖3F的相關段落,在此不予以重述。After the steps of FIGS. 6A to 6E, as shown in FIG. 6F, a
另外,請參照圖3A~圖3E、以及圖3F~圖3G,以瞭解本發明的實施例的柔性元件陣列基板104的製作的過程。In addition, please refer to FIGS. 3A to 3E and FIGS. 3F to 3G to understand the manufacturing process of the flexible
在經過圖6A~圖6F的步驟之後,如圖6G所示,還可以於顯示元件層160上,依序形成光學膠層170與蓋透鏡層180。至此,完成柔性元件陣列基板104的製作。關於光學膠層170與蓋透鏡層180的技術內容,已記載於上述圖3G的相關段落,在此不予以重述。After the steps of FIGS. 6A to 6F, as shown in FIG. 6G, an optical
請參照圖6H,在完成柔性元件陣列基板104的製作之後,可進一步進行剝離動作S。通過剝離界面F(如圖6G所示),而分離一部分的第一層122與基板110。需注意的是,此剝離動作S也可以在完成如圖6E所示的柔性元件陣列基板101的製作之後進行;或是,此剝離動作S也可以在完成如圖6F所示的柔性元件陣列基板103的製作之後進行。Referring to FIG. 6H, after the flexible
另外,請參照圖6A~圖6H、以及圖6I,以瞭解本發明的實施例的柔性元件陣列基板105的製作的過程。In addition, please refer to FIGS. 6A to 6H and FIG. 6I to understand the manufacturing process of the flexible
在經過圖6A~圖6H的步驟之後,請參照圖6I,更進行了一圖案化製程,以至少於柔性元件陣列基板105的彎折區BA,留下第二層124的圖案。該圖案化製程可以是微影步驟搭配蝕刻步驟。在彎折區BA設置第二層124的圖案(金屬),可以加強柔性元件陣列基板105的彎折區BA的彎曲韌性。After the steps of FIGS. 6A to 6H, referring to FIG. 6I, a patterning process is further performed to leave the pattern of the
另外,請參照圖6J,以瞭解本發明的實施例的柔性元件陣列基板106的製作的過程。如圖6H所示,還可以於第二層124的圖案上,形成增厚圖案層190。此處,可將第二層124的圖案作為電鍍種子層(seed layer),利用電鍍法,在針對需要結構性保護或電磁屏蔽保護的區域,進行局部的金屬層的增厚,來形成增厚圖案層190。此增厚圖案層190的厚度例如是1~1000 μm,常用的厚度是小於100 μm,例如,可利用銅做為電鍍金屬,形成40 μm的銅的增厚圖案層190。In addition, please refer to FIG. 6J to understand the manufacturing process of the flexible
圖7A~圖7E是本發明的實施例的含金屬層的剖面結構的示意圖。在圖7A~圖7E的實施例中,一併繪示了基板110、電子元件層130以及阻絕層140,以利於理解含金屬層120在膜層結構中的構成。7A to 7E are schematic diagrams of the cross-sectional structure of the metal-containing layer according to the embodiment of the present invention. In the embodiments of FIGS. 7A to 7E, the
請參照圖7A~圖7E,含金屬層120的總厚度可為5 nm~2000 nm,常用的厚度是100 nm~1000 nm。Referring to FIGS. 7A to 7E, the total thickness of the metal-containing
在一實施例中,含金屬層120可包括單層結構,也就是只具有單一膜層M1。含金屬層120可以是具有單一膜層M1的鉬、釩、鈮、鉭、鎢、錸、或鉻的金屬層。在一實施例中,請參照圖7A,含金屬層120可以是具有單一膜層M1的鉬(Mo)的金屬層。In an embodiment, the metal-containing
請參照圖7B~圖7E,在一實施例中,含金屬層120可包括多層結構。Referring to FIGS. 7B to 7E, in an embodiment, the metal-containing
請參照圖7B,含金屬層120具有兩層的膜層M1、M2,其中,與基板110接觸的膜層M1可採用鉬、釩、鈮、鉭、鎢、錸、或鉻的金屬層;而另一膜層M2可根據應力需求進行不同金屬的搭配,例如,可採用鋁的金屬層。鋁為不與鉬互溶的金屬,並且,利用鉬的膜層M1與鋁的膜層M2之間的熱膨脹係數(Coefficient of thermal expansion, CTE)的差異,可調整含金屬層120的膜層結構的內應力。Referring to FIG. 7B, the metal-containing
請參照圖7C,含金屬層120具有三層的膜層M1、M2、M3,其中,M1/M2/M3的金屬材料,可構成為Mo/Al/Mo的多層結構。Referring to FIG. 7C, the metal-containing
請參照圖7D,含金屬層120具有四層的膜層M1、M2、M3、M4,其中,M1/M2/M3/M4的金屬材料,可構成為Mo/Al/Mo/Al的多層結構。Referring to FIG. 7D, the metal-containing
請參照圖7E,含金屬層120具有五層的膜層M1、M2、M3、M4、M5,其中,M1/M2/M3/M4/M5的金屬材料,可構成為Mo/Al/Mo/Al/Mo的多層結構。另外,關於膜層M5的金屬,可選擇熱膨脹係數搭配阻絕層140的金屬。Referring to FIG. 7E, the metal-containing
另外,關於金屬材料的種類,可選擇能夠用濕蝕刻、或乾蝕刻進行操作的金屬,如此,有利於後續的圖案化製程。適合濕蝕刻的金屬例如為鉬、鉻、鋁、鈮、釹。適合乾蝕刻的金屬例如為鈦。In addition, regarding the type of metal material, a metal that can be operated by wet etching or dry etching can be selected, which is beneficial to the subsequent patterning process. Metals suitable for wet etching are, for example, molybdenum, chromium, aluminum, niobium, and neodymium. The metal suitable for dry etching is, for example, titanium.
承上述,利用圖7B~圖7E的具有多層結構的含金屬層120,可減低鍍膜的應力,讓整體的含金屬層120的厚度增厚,並可抑制膜層M1~M5中的異物所造成的破損。In view of the above, the use of the metal-containing
圖8A~圖8B是本發明的實施例的柔性元件陣列基板的剖面示意圖。可進一步對於經過圖3H或圖6H的剝離動作S之後所得到的柔性元件陣列基板104的含金屬層120(第一層122)進行處理,即可得到如圖8A所示的柔性元件陣列基板201、或圖8B所示的柔性元件陣列基板202。8A to 8B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. The metal-containing layer 120 (first layer 122) of the flexible
詳細而言,請先參照圖8A,此實施例的柔性元件陣列基板201具有:顯示區AA、與位於顯示區AA的一側的彎折區BA。柔性元件陣列基板201包括:第一膜層240、含金屬層224以及電子元件層230。含金屬層224設置在第一膜層240的第一面242,且含金屬層224至少位於彎折區BA。電子元件層230設置在第一膜層240的第二面244,第二面244與第一面242彼此相對。In detail, referring to FIG. 8A first, the flexible
請參照圖8A,第一膜層240可以是阻絕層(barrier layer),使得含金屬層224與電子元件層230之間並不會電性連接。含金屬層224可用以提高柔性元件陣列基板201的韌性及撓曲性。Referring to FIG. 8A, the
在此實施例中,柔性元件陣列基板201還可包括:顯示元件層260,設置於電子元件層230上。顯示元件層260包括:彼此相鄰設置的第一發光元件262、第二發光元件264與第三發光元件266。第一發光元件262可以是紅色發光二極體,第二發光元件264可以是綠色發光二極體,第三發光元件266可以是藍色發光二極體。另外,可以利用柔性封裝(Thin Film Encapsulation, TFE),來將第一發光元件262、第二發光元件264與第三發光元件266進行封裝,而使顯示元件層260具有可彎折的性質。In this embodiment, the flexible
另外,在此實施例中,柔性元件陣列基板201還可包括:光學膠層270,設置於顯示元件層260上;以及蓋透鏡層280,設置於光學膠層270上。利用光學膠層270與蓋透鏡層280,可進一步提升顯示元件層260的光學性質,並優化顯示元件層260的顯示效果。In addition, in this embodiment, the flexible
請參照圖8A,含金屬層224可包括:彼此連接的第一部分224A與第二部分224B。第一部分224A設置於顯示區AA中。第二部分224B設置於彎折區BA中。Referring to FIG. 8A, the metal-containing
另外,請參照圖8B,在此實施例的柔性元件陣列基板202中,含金屬層224可包括:彼此分離的第一部分224A與第二部分224B。第一部分224A設置於顯示區AA中。第二部分224B設置於彎折區BA中。在此實施例中,將含金屬層224進行分段處理,如此,第二部分224B可作為扇出走線(fan-out wiring)而發揮功能。In addition, referring to FIG. 8B, in the flexible
圖9A~圖9B是本發明的實施例的柔性元件陣列基板的剖面示意圖。請參照圖9A,此實施例的柔性元件陣列基板201A,是在圖8A的柔性元件陣列基板201的基礎上,更包括:增厚圖案層290,設置於含金屬層224上。9A-9B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 9A, the flexible
請參照圖9B,此實施例的柔性元件陣列基板202A,是在圖8B的柔性元件陣列基板的基礎202上,更包括:增厚圖案層290,設置於該含金屬層224的第一部分224A上。Referring to FIG. 9B, the flexible
在圖9A與圖9B的實施例中,可將含金屬層224的圖案作為電鍍種子層(seed layer)。並且,利用電鍍法,在針對需要結構性保護或電磁屏蔽保護的區域,進行局部的金屬層的增厚,來形成增厚圖案層290。此增厚圖案層290的厚度例如是1~1000 μm,常用的厚度是小於100 μm,例如,可利用銅做為電鍍金屬,形成40 μm的銅的增厚圖案層290。In the embodiment of FIGS. 9A and 9B, the pattern of the metal-containing
圖10A~圖10C是本發明的實施例的柔性元件陣列基板的剖面示意圖。請參照圖10A,在此實施例的柔性元件陣列基板203中,第一膜層240包括:彎折部240A。含金屬層224設置於彎折部240A上。還可在位於彎折部240A的含金屬層224上,進一步設置增厚圖案層290。圖10A的柔性元件陣列基板203,繪示的是未彎折的狀態。10A to 10C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 10A, in the flexible
請參照圖10B與圖10C,可知,彎折部242的彎折方向,與第一發光元件262、第二發光元件264和第三發光元件266的出光方向LR
、LG
、LB
相反。Referring to FIGS. 10B and 10C, the apparent, the bending direction of the
請參照圖10B,在此實施例的柔性元件陣列基板204中,第一發光元件262、第二發光元件264和第三發光元件266的出光方向LR
、LG
、LB
是朝向圖10B的下方,並且,彎折部240A是往圖10B的上方進行彎折。Referring to FIG 10B, the flexible
請參照圖10C,在此實施例的柔性元件陣列基板205中,第一發光元件262、第二發光元件264和第三發光元件266的出光方向LR
、LG
、LB
是朝向圖10C的上方,並且,彎折部240A是往圖10C的下方進行彎折。Referring to FIG. 10C, the flexible
請再參照圖10B與圖10C,在進行彎折之後,進一步在彎折部240A的含金屬層224上,設置增厚圖案層290,以作為在彎折部240A的位置的保護結構或電磁屏蔽結構。在進行第一膜層240的彎折之後,再以電鍍方法等進行增厚圖案層290的設置,如此,並不會改變第一膜層240的中性軸,有利於整體結構的穩定性。Please refer to FIGS. 10B and 10C again. After bending, a thickening
圖11是本發明的一實施例的柔性元件陣列基板的剖面示意圖。請參照圖11,在此實施例的柔性元件陣列基板206中,含金屬層224的圖案,對應於第一發光元件262、第二發光元件264與第三發光元件266之間的間隔D而設置。如此一來,在柔性元件陣列基板206中,能夠提高第一發光元件262、第二發光元件264與第三發光元件266所發出的光的光穿透性,並且,能夠提升整體結構的強度。FIG. 11 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. 11, in the flexible
圖12A是本發明的一實施例的柔性元件陣列基板的剖面示意圖。圖12B是圖12A的柔性元件陣列基板的底面示意圖。請參照圖12A,此實施例的柔性元件陣列基板207,是在圖11的柔性元件陣列基板206的基礎上,更包括:增厚圖案層290,設置在含金屬層224的圖案上。FIG. 12A is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12B is a schematic bottom view of the flexible element array substrate of FIG. 12A. 12A, the flexible
同樣地,在圖12A與圖12B的實施例中,可將含金屬層224的圖案作為電鍍種子層(seed layer)。並且,利用電鍍法,在針對需要結構性保護或電磁屏蔽保護的區域,進行局部的金屬層的增厚,來形成增厚圖案層290。此增厚圖案層290的厚度例如是1~1000 μm,常用的厚度是小於100 μm,例如,可利用銅做為電鍍金屬,形成40 μm的銅的增厚圖案層290。Similarly, in the embodiments of FIGS. 12A and 12B, the pattern of the metal-containing
圖13是本發明的一實施例的柔性元件陣列基板的剖面示意圖。請參照圖13,此實施例的柔性元件陣列基板208除了第一膜層252、含金屬層224、電子元件層(未繪示)、顯示元件層260(含有第一發光元件262、第二發光元件264與第三發光元件266)、光學膠層270與蓋透鏡層280之外,還包括:第二膜層254,承載顯示元件層260;彩色濾光圖案層300,對應於顯示元件層260而設置,彩色濾光圖案層300包括:彼此相鄰設置的第一濾光圖案310、第二濾光圖案320與第三濾光圖案330;以及增厚圖案層290,設置在位於第一膜層252的彎折部252A的含金屬層224上;其中,彩色濾光圖案層300位於第一膜層252與第二膜層254之間,第一膜層252與該第二膜層254為柔性基底。FIG. 13 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. Please refer to FIG. 13, the flexible
此實施例的柔性元件陣列基板208可具有雙層的柔性基底,柔性基底可使用聚醯亞胺(polyimide, PI)基底。並且,在彎折部252A設置含金屬層224,且以含金屬層224作為電鍍種子層,來進行增厚圖案層290的製作。The flexible
綜上所述,本發明的柔性元件陣列基板以及柔性元件陣列基板的製作方法,經由熱製程,在基板與含金屬層的金屬之間,形成了具有高氧化價數的金屬氧化層的膜層。在此膜層中,由於金屬氧化物的內聚力較弱,而形成剝離界面。通過此剝離界面,可容易地分離一部分的第一層與基板,而可輕鬆地將含金屬層的第二層及其上方的電子元件層一起取下。如此,能夠提高柔性元件陣列基板的製作良率,且得到具有良好的韌性的柔性元件陣列基板。In summary, the flexible element array substrate and the method for manufacturing the flexible element array substrate of the present invention form a film layer of a metal oxide layer with a high oxidation number between the substrate and the metal containing the metal layer through a thermal process. . In this film layer, due to the weak cohesion of the metal oxide, a peeling interface is formed. Through this peeling interface, a part of the first layer and the substrate can be easily separated, and the second layer containing the metal layer and the electronic component layer above it can be easily removed together. In this way, the manufacturing yield of the flexible element array substrate can be improved, and a flexible element array substrate with good toughness can be obtained.
再者,本發明的柔性元件陣列基板以及柔性元件陣列基板的製作方法,可以對經過剝離動作之後的含金屬層進行進一步的處理(例如圖案化製程、增厚製程等),進而,能夠提升柔性元件陣列基板的光穿透強度、保護性、韌性及撓曲性。並且,能夠針對需要結構性保護或電磁屏蔽保護的區域,進行局部的金屬層的增厚。Furthermore, the flexible element array substrate and the manufacturing method of the flexible element array substrate of the present invention can perform further processing (such as patterning process, thickening process, etc.) on the metal-containing layer after the peeling action, thereby improving flexibility The light penetration strength, protection, toughness and flexibility of the element array substrate. In addition, it is possible to locally thicken the metal layer for areas that require structural protection or electromagnetic shielding protection.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.
100、101、102、103、104:柔性元件陣列基板 105、106:柔性元件陣列基板 110:基板 120:含金屬層 122:第一層 122A:第一金屬氧化物 124:第二層 124A:第二金屬氧化物 130:電子元件層 140:阻絕層 150:柔性層 160:顯示元件層 162:第一發光元件 164:第二發光元件 166:第三發光元件 170:光學膠層 180:蓋透鏡層 190:增厚圖案層 201、201A、202、202A:柔性元件陣列基板 203、204、205、206、207、208:柔性元件陣列基板 224:含金屬層 224A:含金屬層的第一部分 224B:含金屬層的第二部分 230:電子元件層 240、252:第一膜層 240A、252A:彎折部 242:第一面 244:第二面 254:第二膜層 260:顯示元件層 262:第一發光元件 264:第二發光元件 266:第三發光元件 270:光學膠層 280:蓋透鏡層 290:增厚圖案層 300:彩色濾光圖案層 310:第一濾光圖案 320:第二濾光圖案 330:第三濾光圖案 AA:顯示區 BA:彎折區 D:間隔 F:剝離界面 H:熱製程 LR 、LG 、LB :出光方向 M1、M2、M3、M4、M5:膜層 S:剝離動作 V:快速熱退火製程100, 101, 102, 103, 104: flexible element array substrate 105, 106: flexible element array substrate 110: substrate 120: metal-containing layer 122: first layer 122A: first metal oxide 124: second layer 124A: first Two metal oxide 130: electronic component layer 140: barrier layer 150: flexible layer 160: display element layer 162: first light-emitting element 164: second light-emitting element 166: third light-emitting element 170: optical glue layer 180: cover lens layer 190: thickened pattern layer 201, 201A, 202, 202A: flexible element array substrate 203, 204, 205, 206, 207, 208: flexible element array substrate 224: metal-containing layer 224A: first part of metal-containing layer 224B: containing The second part of the metal layer 230: electronic component layer 240, 252: first film layer 240A, 252A: bending part 242: first surface 244: second surface 254: second film layer 260: display element layer 262: first A light-emitting element 264: second light-emitting element 266: third light-emitting element 270: optical glue layer 280: cover lens layer 290: thickening pattern layer 300: color filter pattern layer 310: first filter pattern 320: second filter light pattern 330: third filter patterns AA: display area BA: bending area D: distance F: interface peeled H: thermal process L R, L G, L B : light direction M1, M2, M3, M4, M5: Film S: Peeling action V: Rapid thermal annealing process
圖1A~圖1C是本發明的實施例的柔性元件陣列基板的剖面示意圖。 圖2是將圖1A的柔性元件陣列基板進行剝離動作的示意圖。 圖3A~圖3H是本發明的實施例的柔性元件陣列基板的製作方法的步驟流程示意圖。 圖4A是含金屬層的金屬為鉬時,自然氧化的鉬金屬的表面的X射線光電子能譜圖(X-ray Photoelectron Spectroscopy)。 圖4B是含金屬層的金屬為鉬時,位於剝離界面的上方的含金屬層的一部分的第一層的X射線光電子能譜圖。 圖4C是含金屬層的金屬為鉬時,位於剝離界面的下方的含金屬層的一部分的第一層的X射線光電子能譜圖。 圖5繪示了本發明的一實施例的柔性元件陣列基板的電子元件層的閥值電壓的改變(Vth shift)隨著受壓時間(Stress time)而變化的曲線圖、以及習知的使用柔性基底的柔性元件陣列基板的電子元件層的閥值電壓的改變隨著受壓時間而變化的曲線圖。 圖6A~圖6J是本發明的一實施例的柔性元件陣列基板的製作方法的步驟流程示意圖。 圖7A~圖7E是本發明的實施例的含金屬層的剖面結構的示意圖。 圖8A~圖8B是本發明的實施例的柔性元件陣列基板的剖面示意圖。 圖9A~圖9B是本發明的實施例的柔性元件陣列基板的剖面示意圖。 圖10A~圖10C是本發明的實施例的柔性元件陣列基板的剖面示意圖。 圖11是本發明的一實施例的柔性元件陣列基板的剖面示意圖。 圖12A是本發明的一實施例的柔性元件陣列基板的剖面示意圖。 圖12B是圖12A的柔性元件陣列基板的底面示意圖。 圖13是本發明的一實施例的柔性元件陣列基板的剖面示意圖。1A to 1C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. FIG. 2 is a schematic diagram of peeling the flexible element array substrate of FIG. 1A. 3A to 3H are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention. 4A is an X-ray Photoelectron Spectroscopy (X-ray Photoelectron Spectroscopy) of the surface of naturally oxidized molybdenum metal when the metal of the metal-containing layer is molybdenum. 4B is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located above the peeling interface when the metal of the metal-containing layer is molybdenum. 4C is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located below the peeling interface when the metal of the metal-containing layer is molybdenum. FIG. 5 illustrates a graph of the threshold voltage change (Vth shift) of the electronic device layer of the flexible device array substrate according to an embodiment of the present invention as a function of stress time, and the conventional use A graph showing the change of the threshold voltage of the electronic element layer of the flexible element array substrate of the flexible base with the pressure time. 6A to 6J are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention. 7A to 7E are schematic diagrams of the cross-sectional structure of the metal-containing layer according to the embodiment of the present invention. 8A to 8B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 9A-9B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 10A to 10C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12A is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12B is a schematic bottom view of the flexible element array substrate of FIG. 12A. FIG. 13 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention.
100:柔性元件陣列基板 100: Flexible component array substrate
110:基板 110: substrate
120:含金屬層 120: Metal-containing layer
122:第一層 122: first layer
122A:第一金屬氧化物 122A: first metal oxide
124:第二層 124: The second layer
124A:第二金屬氧化物 124A: second metal oxide
130:電子元件層 130: Electronic component layer
F:剝離界面 F: Stripping interface
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TWI737243B (en) | 2021-08-21 |
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