TW202119376A - Flexible device array substrate and manufacturing method of flexible device array substrate - Google Patents

Abstract

A flexible element array substrate includes a substrate, a metal-containing layer, and an electronic component layer. The metal-containing layer is disposed on the substrate. The metal-containing layer includes: a first layer and a second layer. The first layer is located on a side close to the substrate, and the first layer contains a first metal oxide to form a peeling interface in the first layer. The second layer is located on a side away from the substrate, and the second layer contains a second metal oxide. The oxidation number of the metal in the second metal oxide is smaller than the oxidation number of the metal in the first metal oxide. The electronic component layer is disposed above the metal-containing layer. A method for manufacturing the flexible element array substrate is also provided.

Description

Flexible element array substrate and manufacturing method of flexible element array substrate

The present invention relates to an element array substrate and a manufacturing method of the element array substrate, and particularly relates to a flexible element array substrate and a manufacturing method of the flexible element array substrate.

Generally speaking, the manufacturing method of a bendable flexible display panel includes a flexible element array substrate manufacturing process and a module manufacturing process.

The manufacturing process of the flexible device array substrate includes the following steps. First, provide a glass carrier. Next, a flexible substrate, such as a polyimide (PI) substrate, is formed on the glass carrier. Then, a barrier layer is formed on the flexible substrate. Then, on the barrier layer, an electronic element layer, a display element layer (display element layer), an optical clear adhesive layer (OCA layer) and a cover lens layer are sequentially formed. Finally, use laser lift off or mechanical debonding to peel the glass carrier from the flexible substrate. At this point, the flexible substrate, barrier layer, electronic component layer, display component layer, A flexible element array substrate composed of an optical glue layer and a cover lens layer.

In addition, the module manufacturing process includes the following steps. First, a pressure sensitive adhesive (PSA) and a back foil (BF) are sequentially arranged on one side of the flexible base of the aforementioned flexible element array substrate. After that, pressure sensitive adhesive and stainless steel foil (SUS foil) are arranged in sequence on one side of the back foil. The arrangement of the stainless steel foil enables the flexible element array substrate to have bendable toughness.

However, in the above-mentioned manufacturing process of the flexible element array substrate, in the process of peeling the glass carrier board from the flexible base, the flexible element array substrate is prone to cracks due to uneven stress. Furthermore, since the structure of the multiple film layers of the flexible element array substrate has no anti-cracking effect, defects are likely to occur in the inside of the multiple film layers, which may cause bubbles, cracks or peeling.

The invention provides a flexible element array substrate and a manufacturing method of the flexible element array substrate, which can provide a flexible element array substrate with a good structure.

The present invention provides a flexible element array substrate, including: a substrate, a metal-containing layer, and an electronic element layer. The metal-containing layer is disposed on the substrate. The metal-containing layer includes: a first layer located on the side close to the substrate, the first layer containing a first metal oxide to form a peeling interface in the first layer; and a second layer located on the side away from the substrate, the second layer The layer contains a second metal oxide, wherein the oxidation number of the metal in the second metal oxide is smaller than the oxidation number of the metal in the first metal oxide. The electronic element layer is arranged above the metal-containing layer.

In an embodiment of the present invention, the metal of the metal-containing layer is selected from: molybdenum (Mo), vanadium (V), niobium (Nb), tantalum (Ta), tungsten (W), rhenium (Re), chromium (Cr) and combinations thereof.

In an embodiment of the present invention, the metal-containing layer includes a single-layer structure.

In an embodiment of the present invention, the metal-containing layer includes: a multilayer structure.

In an embodiment of the present invention, the second layer contains a metal with zero oxidation valence.

In an embodiment of the present invention, it further includes: a barrier layer disposed between the metal-containing layer and the electronic component layer.

In an embodiment of the present invention, it further includes: a flexible layer disposed between the barrier layer and the metal-containing layer.

In an embodiment of the present invention, it further includes: a display element layer disposed on the electronic element layer. The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element that are arranged adjacent to each other.

In an embodiment of the present invention, it further includes: an optical glue layer, which is arranged on the display element layer; and a cover lens layer, which is arranged on the optical glue layer.

The present invention provides a method for manufacturing a flexible element array substrate, which includes: providing a substrate; forming a metal-containing layer on the substrate; providing a thermal process so that the metal-containing layer forms a first layer and a second layer. The first layer is located near the substrate. Side, the first layer contains a first metal oxide to form a peeling interface in the first layer, the second layer is located on the side away from the substrate, and the second layer contains a second metal oxide, wherein the second metal oxide The oxidation number of the metal in the metal oxide is smaller than the oxidation number of the metal in the first metal oxide; the electronic component layer is formed on the metal-containing layer; and the peeling action is performed to separate a part of the first layer and the first layer by peeling off the interface. Substrate.

In an embodiment of the present invention, the metal of the metal-containing layer is selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.

In an embodiment of the present invention, the metal-containing layer includes a single-layer structure.

In an embodiment of the present invention, the metal-containing layer includes: a multilayer structure.

In an embodiment of the present invention, the second layer contains a metal with zero oxidation valence.

In an embodiment of the present invention, it further includes: forming a barrier layer between the metal-containing layer and the electronic component layer.

In an embodiment of the present invention, it further includes: forming a display element layer on the electronic element layer. The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element that are arranged adjacent to each other.

In an embodiment of the present invention, it further includes: sequentially forming an optical adhesive layer and a cover lens layer on the display element layer.

In an embodiment of the present invention, the temperature range of the thermal process is 350°C to 650°C.

In an embodiment of the present invention, the temperature range of the thermal process is 500°C to 650°C.

In an embodiment of the present invention, the thermal process is performed before the step of forming the electronic component layer.

In an embodiment of the present invention, the thermal process is performed in the step of forming the electronic component layer.

In an embodiment of the present invention, before the step of forming the electronic device layer, a rapid thermal annealing process is further included.

In an embodiment of the present invention, after the peeling action, the pattern of the second layer is left at least in the bending area of the flexible element array substrate.

In an embodiment of the present invention, it further includes: forming a thickened pattern layer on the pattern of the second layer.

The present invention also provides a flexible element array substrate having a display area and a bending area located on one side of the display area. The flexible element array substrate includes: a first film layer, a metal-containing layer, and an electronic element layer. The metal-containing layer is arranged on the first surface of the first film layer, and the metal-containing layer is located at least in the bending area. The electronic element layer is arranged on the second surface of the first film layer, and the second surface and the first surface are opposite to each other.

In an embodiment of the present invention, it further includes: a display element layer disposed on the electronic element layer. The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element that are arranged adjacent to each other.

In an embodiment of the present invention, it further includes: an optical glue layer, which is arranged on the display element layer; and a cover lens layer, which is arranged on the optical glue layer.

In an embodiment of the present invention, the metal-containing layer includes: a first part and a second part connected to each other. The first part is set in the display area. The second part is arranged in the bending area. In an embodiment of the present invention, it further includes: a thickening pattern layer disposed on the metal-containing layer.

In an embodiment of the present invention, the metal-containing layer includes: a first part and a second part separated from each other. The first part is set in the display area. The second part is arranged in the bending area. In an embodiment of the present invention, it further includes: a thickening pattern layer disposed on the first part of the metal-containing layer.

In an embodiment of the present invention, the first film layer includes: a bent portion. The metal-containing layer is arranged on the bending part. The bending direction of the bending portion is opposite to the light emitting direction of the first light emitting element, the second light emitting element, and the third light emitting element. In an embodiment of the present invention, it further includes: a thickening pattern layer, which is disposed on the metal-containing layer at the bent portion.

In an embodiment of the present invention, the pattern of the metal-containing layer is provided corresponding to the interval between the first light-emitting element, the second light-emitting element, and the third light-emitting element. In an embodiment of the present invention, it further includes: a thickening pattern layer disposed on the pattern of the metal-containing layer.

In an embodiment of the present invention, it further includes: a second film layer, which carries the display element layer; a color filter pattern layer, which is provided corresponding to the display element layer, and the color filter pattern layer includes: first layers arranged adjacent to each other. The filter pattern, the second filter pattern, and the third filter pattern; and the thickening pattern layer, which is disposed on the metal-containing layer at the bent portion of the first film layer; wherein, the color filter pattern layer is located on the first film Between the layer and the second film layer, the first film layer and the second film layer are flexible substrates.

Based on the above, the flexible element array substrate and the method for manufacturing the flexible element array substrate of the embodiments of the present invention form a film layer of a metal oxide layer with a high oxidation number between the substrate and the metal containing the metal layer through a thermal process. , And further, a peeling interface is formed in this film layer. Through this peeling interface, a part of the first layer and the substrate can be easily separated, and the second layer containing the metal layer and the electronic component layer above it can be easily removed together, thereby improving the manufacturing quality of the flexible device array substrate. And obtain a flexible element array substrate with improved toughness.

Furthermore, the flexible element array substrate and the manufacturing method of the flexible element array substrate of the present invention can perform further processing (such as patterning process, thickening process, etc.) on the metal-containing layer, and further, can improve the light of the flexible element array substrate. Penetration strength, protection, toughness and flexibility, and can also be targeted at areas requiring structural protection or electromagnetic shielding protection, localized thickening of the metal layer.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

1A to 1C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. In the embodiments of FIGS. 1A to 1C, the same components are labeled with the same component symbols for related description.

1A, the flexible device array substrate 100 of this embodiment includes: a substrate 110, a metal-containing layer 120, and an electronic device layer 130. The metal-containing layer 120 is disposed on the substrate 110. The metal-containing layer 120 includes: a first layer 122 and a second layer 124. The first layer 122 is located on the side close to the substrate 110. The first layer 122 contains a first metal oxide 122A to form a peeling interface F in the first layer 122. The second layer 124 is located on a side away from the substrate 110. The second layer 124 contains a second metal oxide 124A. The oxidation number of the metal in the second metal oxide 124A is smaller than the oxidation number of the metal in the first metal oxide 122A. The electronic element layer 130 is disposed above the metal-containing layer 120.

1A, the substrate 110 may be a glass substrate or a non-glass substrate deposited with an oxide layer (the oxide layer functions to provide oxygen atoms). In the example of using a glass substrate as the substrate 110, since the main component of the glass is silicon dioxide, the silicon dioxide can also provide oxygen atoms, so that the metal of the metal-containing layer 120 can oxidize with the oxygen atoms.

The metal of the metal-containing layer 120 may be a transition metal having multiple oxidation states. In one embodiment, the metal of the metal-containing layer 120 is selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof. In detail, the metal of the metal-containing layer 120 can be: metallic molybdenum (Mo), or a high-temperature metal similar to molybdenum, or a "metal with acidic metal oxide", such as vanadium, niobium, tantalum, tungsten, Rhenium, chromium.

1A, the first layer 122 contains a first metal oxide 122A. The first metal oxide 122A is a metal oxide with a high oxidation number. Due to its weak cohesion force, a peeling interface F is formed in the first layer 122. With this peeling interface F, the first layer 122 can be easily separated between layers, and a part of the first layer 122 and the substrate 110 can be easily separated. In this way, the influence of the stress of the peeling action on the film layer in the flexible element array substrate 100 can be reduced, and the film layer fragmentation can be reduced. In addition, the second layer 124 may contain a metal with a zero oxidation number, that is, the second layer 124 may contain a metal that has not yet reacted with oxygen atoms.

1A, the electronic device layer 130 may be an active device array layer. The active element can be, for example, a thin film transistor or other suitable switching element, which is not limited here.

1B, the flexible device array substrate 101 of this embodiment may further include a barrier layer 140 disposed between the metal-containing layer 120 and the electronic device layer 130. The barrier layer 140 may use an inorganic layer stack of oxynitride. By providing the barrier layer 140, the electrical connection between the electronic element layer 130 and the metal-containing layer 120 can be isolated, so as to prevent the electrical properties of the electronic element layer 130 from being affected by the metal of the metal-containing layer 120.

1C, the flexible device array substrate 102 of this embodiment may further include: a flexible layer 150 disposed between the barrier layer 140 and the metal-containing layer 120. The material of the flexible layer 150 may be polyimide (PI). With the provision of the flexible layer 150, the flexibility of the flexible element array substrate 102 can be improved.

FIG. 2 is a schematic diagram of peeling the flexible element array substrate of FIG. 1A. 1A and 2 at the same time, after the electronic element layer 130 is completed, an external force is applied to the flexible element array substrate 100 to perform a peeling action S, and a part of the first layer 122 and the substrate 110 are separated by peeling the interface F.

In the manufacturing process of the flexible device array substrate 100, energy can be given to the interface between the metal-containing layer 120 and the substrate 110 (for example, a thermal process). At this time, oxygen atoms from the substrate 110 will oxidize with the metal-containing layer 120. , And generated between the substrate 110 and the metal-containing layer 120: a first layer 122 containing a first metal oxide 122A.

With the influence of diffusion, compared with the first layer 122, the second layer 124 on the side far from the substrate 110 receives less oxygen atoms; therefore, the second metal contained in the second layer 124 is oxidized The oxidation number of the metal in the compound 124A is smaller than the oxidation number of the metal in the first metal oxide 122A of the first layer 122. In addition, the second layer 124 may also contain a metal with a zero oxidation number, that is, a metal that has not yet reacted with oxygen atoms.

It can be noticed that after the thermal process, the inside of the first layer 122 of the first metal oxide 122A with a high oxidation number, due to the reduction of the cohesive force of the first metal oxide 122A, a peeling interface F that can be easily peeled is formed. . In other words, when a part of the first layer 122 and the substrate 110 are separated by the peeling interface F, the applied external force will not affect the electronic component layer 130, and the production yield of electronic components in the electronic component layer 130 can be improved. .

3A to 3H are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention.

Please refer to FIGS. 3A to 3E first to understand the manufacturing process of the flexible device array substrate 101 according to the embodiment of the present invention.

Referring to FIG. 3A, first, a substrate 110 is provided. The substrate 110 may be a glass substrate or a non-glass substrate deposited with an oxide layer. As described above, the substrate 110 may provide oxygen atoms, so that the metal of the subsequent metal-containing layer 120 can be oxidized with the oxygen atoms.

Referring to FIG. 3B, a metal-containing layer 120 is formed on the substrate 110. The metal of the metal-containing layer 120 may be a transition metal having multiple oxidation states. In an embodiment, the metal of the metal-containing layer 120 may be selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.

In an embodiment, the metal of the metal-containing layer 120 may be molybdenum oxide (MoO) with divalent molybdenum (Mo ²⁺ ). In another embodiment, the metal of the metal-containing layer 120 may be molybdenum metal with zero-valent molybdenum (Mo). That is, the metal-containing layer 120 may include a metal with a zero oxidation number, or a combination of a metal with a zero oxidation number and a metal oxide of a metal with a low oxidation number.

Referring to FIG. 3C, a barrier layer 140 may be formed on the metal-containing layer 120. The barrier layer 140 may use an inorganic layer stack of oxynitride. The barrier layer 140 can prevent the metal-containing layer 120 located below from causing electrical effects on other film layers formed above.

Referring to FIG. 3D, a thermal process H is provided to form the first layer 122 and the second layer 124 from the metal-containing layer 120. The first layer 122 is located on the side close to the substrate 110. The first layer contains a first metal oxide 122A to form a peeling interface F in the first layer 122. The second layer 124 is located on a side away from the substrate 110. The second layer 124 contains a second metal oxide 124A. The oxidation number of the metal in the second metal oxide 124A is smaller than the oxidation number of the metal in the first metal oxide 122A.

Referring to FIGS. 3D and 3E at the same time, it can be seen that the thermal process H is performed before the step of forming the electronic component layer 130 (as shown in the subsequent FIG. 3E). The temperature range of the thermal process H can be 350°C to 650°C. In another embodiment, the temperature range of the thermal process H may also be 500°C to 650°C.

Referring to FIG. 3E, an electronic component layer 130 is formed above the metal-containing layer 120. The electronic element layer 130 may be an active element array layer. The active element can be, for example, a thin film transistor or other suitable switching elements. So far, the flexible element array substrate 101 as shown in FIG. 1B can be manufactured.

In addition, please continue to refer to FIGS. 3A to 3E and FIG. 3F to understand the manufacturing process of the flexible device array substrate 103 according to the embodiment of the present invention.

After the steps of FIGS. 3A to 3E, as shown in FIG. 3F, a display element layer 160 can also be formed on the electronic element layer 130. The display element layer 160 may include: a first light-emitting element 162, a second light-emitting element 164, and a third light-emitting element 166 arranged adjacent to each other. So far, the fabrication of the flexible element array substrate 103 is completed.

That is to say, referring to FIG. 3F, the flexible device array substrate 103 of this embodiment may further include a display device layer 160 disposed on the electronic device layer 130. The display element layer 160 includes a first light-emitting element 162, a second light-emitting element 164, and a third light-emitting element 166 that are arranged adjacent to each other.

The first light-emitting element 162 may be a red light-emitting diode, the second light-emitting element 164 may be a green light-emitting diode, and the third light-emitting element 166 may be a blue light-emitting diode. In addition, flexible packaging (Thin Film Encapsulation, TFE) may be used to encapsulate the first light-emitting element 162, the second light-emitting element 164, and the third light-emitting element 166, so that the display element layer 160 has a bendable property.

In addition, please continue to refer to FIGS. 3A to 3E and FIGS. 3F to 3G to understand the manufacturing process of the flexible device array substrate 104 according to the embodiment of the present invention.

After the steps of FIGS. 3A to 3F, as shown in FIG. 3G, an optical adhesive layer 170 and a cover lens layer 180 may be formed on the display element layer 160 in sequence. So far, the fabrication of the flexible element array substrate 104 is completed.

That is to say, referring to FIG. 3G, the flexible device array substrate 104 of this embodiment may further include: an optical glue layer 170 disposed on the display device layer 160; and a cover lens layer 180 disposed on the optical glue layer 170. Using the optical glue layer 170 and the cover lens layer 180 can further improve the optical properties of the display element layer 160 and optimize the display effect of the display element layer 160.

Referring to FIG. 3H, after the fabrication of the flexible element array substrate 104 is completed, a peeling action S may be further performed. By peeling off the interface F (as shown in FIG. 3G), a part of the first layer 122 and the substrate 110 are separated. It should be noted that the peeling action S can also be performed after the flexible device array substrate 101 shown in FIG. 3E is completed; or, the peeling action S can also be performed after the flexible device array substrate shown in FIG. 3F is completed. The 103 was made afterwards.

In view of the above, in the method for manufacturing the flexible element array substrate 100, 101, 102, 103, 104 of the embodiment of the present invention, the metal-containing layer 120 is provided on the substrate 110 (for example, a glass substrate). Through the thermal process H on the interface between the substrate 110 and the metal-containing layer 120, the first layer 122 (the first metal oxide 122A with a high oxidation value), and the second layer 124 (with the low oxidation value) are formed. Number of second metal oxide 122B).

Since the first metal oxide 122A is a metal oxide with a high oxidation number, its cohesion is low, and a peeling interface F is formed in the first layer 122. By this peeling interface F, the first layer 122 can be easily separated from each other. In this way, a part of the first layer 122 and the substrate 110 can be easily separated, and the film layer in the flexible element array substrate 100, 101, 102, 103, 104 can be reduced from being affected by the peeling stress, and the film layer can be reduced. crack.

FIG. 4A is an X-ray photoelectron spectrogram of the surface of naturally oxidized molybdenum metal when the metal of the metal-containing layer is molybdenum. 4B is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located above the peeling interface when the metal of the metal-containing layer is molybdenum. 4C is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located below the peeling interface when the metal of the metal-containing layer is molybdenum. In FIGS. 4A to 4C, the horizontal axis is binding energy (eV), and the vertical axis is counts/sec.

Please refer to 3B and FIG. 4A at the same time. When the metal of the metal-containing layer 120 is molybdenum (Mo) and has zero-valent molybdenum (Mo), the surface of the molybdenum metal will be naturally oxidized. As shown in the wave peak Mo3d3 (MoO ₃ ) and the wave peak Mo3d5 (MoO ₃ ) in FIG. 4A, it can be seen that the surface composition of the naturally oxidized molybdenum metal is mainly _{MoO 3.} In addition, as shown in the wave peak Mo3d3 (Mo-Mo) and the wave peak Mo3d5 (Mo-Mo) in FIG. 4A, it can be seen that the composition of the naturally oxidized molybdenum metal surface also has molybdenum metal. In addition, as shown in the peaks Mo3d3 (MoO ₂ ) and Mo3d5 (MoO ₂ ) in FIG. 4A, it can be seen that the composition of the naturally oxidized molybdenum metal surface also has MoO ₂ .

After calculation, the atomic percentages between the peak Mo3d5 (Mo-Mo), the peak Mo3d5 (MoO ₂ ), and the peak Mo3d5 (MoO ₃ ) are 28.3%: 15.1%: 56.6%.

Please refer to FIGS. 3G to 3H and FIG. 4B at the same time. For the first layer 122 that is a part of the metal-containing layer 120 located above the peeling interface F, X-ray photoelectron spectroscopy analysis can be performed to obtain the X-ray as shown in FIG. 4B Photoelectron spectroscopy.

As shown in the peaks Mo3d3 (MoO ₂ ) and Mo3d5 (MoO ₂ ) in FIG. 4B, it can be seen that the first layer 122, which is a part of the metal-containing layer 120 above the peeling interface F, has a surface composition MoO _{2 is} mainly used. In addition, as shown in the peak Mo3d3 (Mo-Mo) and the peak Mo3d5 (Mo-Mo) in FIG. 4B, it can be seen that the first layer 122 of a part of the metal-containing layer 120 located above the peeling interface F has a surface The composition also has molybdenum metal.

After calculation, the atomic percentage between the peak Mo3d5 (Mo-Mo) and the peak Mo3d5 (MoO ₂ ) is 73.2%: 26.8%. That is, the first layer 122 that is a part of the metal-containing layer 120 located above the peeling interface F has a composition of a metal with a zero oxidation number and a metal oxide with a low oxidation number.

Referring to FIGS. 3G to 3H and 4C at the same time, for the first layer 122 which is a part of the metal-containing layer 120 located below the peeling interface F, X-ray photoelectron spectroscopy analysis can be performed to obtain the X-ray as shown in FIG. 4C Photoelectron spectroscopy.

As shown in the wave peak Mo3d3 (MoO ₃ ) and wave peak Mo3d5 (MoO ₃ ) in FIG. 4C, it can be seen that the first layer 122, which is a part of the metal-containing layer 120 under the peeling interface F, has a surface composition MoO _{3 is} mainly used. In addition, as shown in the peaks Mo3d3 (MoO ₂ ) and Mo3d5 (MoO ₂ ) in FIG. 4C, it can be seen that the first layer 122 of a part of the metal-containing layer 120 located below the peeling interface F has a The composition also has MoO ₂ . Furthermore, as shown by the peaks Mo3d3 (Mo-Mo) and Mo3d5 (Mo-Mo) in FIG. 4C, it can also be seen that the first layer 122 of a part of the metal-containing layer 120 located below the peeling interface F, The surface composition also has a very small amount of molybdenum metal.

After calculation, the atomic percentages between the peak Mo3d5 (Mo-Mo), the peak Mo3d5 (MoO ₂ ), and the peak Mo3d5 (MoO ₃ ) are 0.6%: 24.6%: 74.8%. In other words, the first layer 122, which is a part of the metal-containing layer 120 located below the peeling interface F, has a composition: a metal oxide with a high oxidation number.

From the above-mentioned figures 3B and 4A, 3G~3H and 4B, 3G~3H and 4C, it can be seen that taking molybdenum metal as an example, compared with the naturally oxidized molybdenum metal surface (the composition is MoO ₃ Mainly), after the thermal process H (as shown in FIG. 3D), molybdenum oxides with different oxidation valences are formed in the metal-containing layer 120, and further, a peeling interface F is formed in the metal-containing layer 120.

It can be seen from FIG. 4B that the surface composition of the first layer 122, which is a part of the metal-containing layer 120 above the peeling interface F, is _{mainly MoO 2} (low oxidation number metal oxide); and, from FIG. 4C It can be seen that the surface composition of the first layer 122, which is a part of the metal-containing layer 120 located below the peeling interface F, is _{mainly MoO 3} (high oxidation number metal oxide).

The above FIGS. 4A to 4C only use molybdenum as the material of the metal-containing layer 120 as an example for description. In the case of using other transition metals (vanadium, niobium, tantalum, tungsten, rhenium, chromium) as the metal-containing layer 120, the above-mentioned X-ray photoelectron spectroscopy analysis can also be performed to know each of the metal-containing layer 120 The composition state of the metal oxide of the film.

FIG. 5 illustrates a graph of the threshold voltage change (Vth shift) of the electronic device layer of the flexible device array substrate according to an embodiment of the present invention as a function of stress time, and the conventional use A graph showing the change of the threshold voltage of the electronic element layer of the flexible element array substrate of the flexible base with the pressure time. In Figure 5, the vertical axis is the change in threshold voltage, and the horizontal axis is the pressure time (seconds, sec).

Please refer to Figure 5, under the condition that the temperature is 60°C, the gate voltage V gate and the drain voltage V drain are both -20V, at 0 sec, 10 sec, 100 sec, 300 sec and 1000 sec, each measurement One time "Gate Voltage vs. Drain Current (Id-Vg) Characteristic Curve". It can be seen that in the flexible element array substrate of the embodiment of the present invention, the electronic element layer has a stable threshold voltage.

Compared with the embodiment of the present invention, in the conventional flexible element array substrate using a flexible substrate (for example, polyimide PI), the threshold voltage of the electronic element layer changes drastically with the pressure time. Unstable threshold voltage.

It can be seen that, in the flexible element array substrate of the embodiment of the present invention, the electrical performance of the active element (such as thin film transistor TFT) of the electronic element layer after the pressure test is better than that of the conventional flexible element array substrate. The electrical performance of the active components of the electronic component layer (such as thin film transistor TFT) in the flexible device array substrate of the base (such as polyimide PI) after undergoing a pressure test.

6A to 6J are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention. Referring to FIG. 6A, first, a substrate 110 is provided. The substrate 110 may be a glass substrate or a non-glass substrate deposited with an oxide layer. As described above, the substrate 110 may provide oxygen atoms, so that the metal of the subsequent metal-containing layer 120 can be oxidized with the oxygen atoms.

6B, a metal-containing layer 120 is formed on the substrate 110. The metal of the metal-containing layer 120 may be a transition metal having multiple oxidation states. In an embodiment, the metal of the metal-containing layer 120 may be selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.

In one embodiment, the metal of the metal-containing layer 120 may be molybdenum oxide (MoO) with divalent molybdenum (Mo ²⁺ ); in another embodiment, the metal of the metal-containing layer 120 may also be molybdenum metal, With zero-valent molybdenum (Mo). That is, the metal-containing layer 120 may include a metal with a zero oxidation number, or a combination of a metal with a zero oxidation number and a metal oxide of a metal with a low oxidation number.

Referring to FIG. 6C, a barrier layer 140 may be formed on the metal-containing layer 120. The barrier layer 140 may use an inorganic layer stack of oxynitride. The barrier layer 140 can prevent the metal-containing layer 120 located below from causing electrical effects on other film layers formed above.

Referring to FIG. 6D, it can be noted that in this embodiment, before the step of forming the electronic device layer 130 as shown in FIG. 6E, a rapid thermal annealing process V is performed first. Through this rapid thermal annealing process V, the hydrogen in each film layer can be removed, which is beneficial to improve the electronic characteristics of the electronic device layer 130 to be subsequently fabricated.

6E, it can be noted that in this embodiment, the thermal process H is performed in the step of forming the electronic component layer 130. The electronic component layer 130 may be, for example, a low temperature poly-silicon (LTPS) thin film transistor component layer. That is to say, the heating step itself when forming the electronic element layer 130 is used, and the metal-containing layer 120 is heated at the same time.

In this way, the metal-containing layer 120 can be oxidized with the oxygen atoms from the substrate 110 to form the first layer 122 and the second layer 124. The first layer 122 is located on the side close to the substrate 110. The first layer contains a first metal oxide 122A to form a peeling interface F in the first layer 122. The second layer 124 is located on a side away from the substrate 110. The second layer 124 contains a second metal oxide 124A. The oxidation number of the metal in the second metal oxide 124A is smaller than the oxidation number of the metal in the first metal oxide 122A. So far, the flexible element array substrate 101 as shown in FIG. 6E can be manufactured.

Similarly, the temperature range of the thermal process H can be 350°C to 650°C. In another embodiment, the temperature range of the thermal process H may also be 500°C to 650°C. In the embodiment of FIG. 6A to FIG. 6E, the implementation steps of the thermal process H can be saved, and the manufacturing process of the flexible element array substrate 101 can be further simplified.

In addition, please refer to FIGS. 6A to 6E and FIG. 6F to understand the manufacturing process of the flexible device array substrate 103 according to the embodiment of the present invention.

After the steps of FIGS. 6A to 6E, as shown in FIG. 6F, a display element layer 160 can also be formed on the electronic element layer 130. The display element layer 160 may include: a first light-emitting element 162, a second light-emitting element 164, and a third light-emitting element 166 arranged adjacent to each other. So far, the fabrication of the flexible element array substrate 103 is completed. The technical content of the display element layer 160 has been described in the relevant paragraphs of FIG. 3F and will not be repeated here.

In addition, please refer to FIGS. 3A to 3E and FIGS. 3F to 3G to understand the manufacturing process of the flexible device array substrate 104 according to the embodiment of the present invention.

After the steps of FIGS. 6A to 6F, as shown in FIG. 6G, an optical adhesive layer 170 and a cover lens layer 180 may be formed on the display element layer 160 in sequence. So far, the fabrication of the flexible element array substrate 104 is completed. The technical content of the optical adhesive layer 170 and the cover lens layer 180 has been described in the relevant paragraphs of FIG. 3G and will not be repeated here.

Referring to FIG. 6H, after the flexible element array substrate 104 is fabricated, a peeling action S may be further performed. By peeling off the interface F (as shown in FIG. 6G), a part of the first layer 122 and the substrate 110 are separated. It should be noted that this peeling action S can also be performed after the flexible device array substrate 101 shown in FIG. 6E is completed; or, the peeling action S can also be performed after the flexible device array substrate shown in FIG. 6F is completed. The 103 was made afterwards.

In addition, please refer to FIGS. 6A to 6H and FIG. 6I to understand the manufacturing process of the flexible device array substrate 105 according to the embodiment of the present invention.

After the steps of FIGS. 6A to 6H, referring to FIG. 6I, a patterning process is further performed to leave the pattern of the second layer 124 at least in the bending area BA of the flexible device array substrate 105. The patterning process can be a photolithography step combined with an etching step. Disposing the pattern (metal) of the second layer 124 in the bending area BA can enhance the bending toughness of the bending area BA of the flexible element array substrate 105.

In addition, please refer to FIG. 6J to understand the manufacturing process of the flexible element array substrate 106 according to the embodiment of the present invention. As shown in FIG. 6H, a thickened pattern layer 190 may also be formed on the pattern of the second layer 124. Here, the pattern of the second layer 124 can be used as an electroplating seed layer, and the electroplating method is used to locally thicken the metal layer in areas that require structural protection or electromagnetic shielding protection to form a thickening. Pattern layer 190. The thickness of the thickened pattern layer 190 is, for example, 1 to 1000 μm, and a commonly used thickness is less than 100 μm. For example, copper can be used as the electroplating metal to form the thickened pattern layer 190 of copper with a thickness of 40 μm.

7A to 7E are schematic diagrams of the cross-sectional structure of the metal-containing layer according to the embodiment of the present invention. In the embodiments of FIGS. 7A to 7E, the substrate 110, the electronic component layer 130, and the barrier layer 140 are shown together to facilitate understanding of the composition of the metal-containing layer 120 in the film structure.

Referring to FIGS. 7A to 7E, the total thickness of the metal-containing layer 120 may be 5 nm to 2000 nm, and the commonly used thickness is 100 nm to 1000 nm.

In an embodiment, the metal-containing layer 120 may include a single-layer structure, that is, it has only a single film layer M1. The metal-containing layer 120 may be a metal layer of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, or chromium with a single film layer M1. In one embodiment, referring to FIG. 7A, the metal-containing layer 120 may be a molybdenum (Mo) metal layer with a single film layer M1.

Referring to FIGS. 7B to 7E, in an embodiment, the metal-containing layer 120 may include a multilayer structure.

Referring to FIG. 7B, the metal-containing layer 120 has two layers M1 and M2, wherein the layer M1 in contact with the substrate 110 may be a metal layer of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, or chromium; and The other film layer M2 can be matched with different metals according to stress requirements. For example, a metal layer of aluminum can be used. Aluminum is a metal that is not miscible with molybdenum, and the difference in the coefficient of thermal expansion (CTE) between the film layer M1 of molybdenum and the film layer M2 of aluminum can be used to adjust the film structure of the metal-containing layer 120 Internal stress.

Referring to FIG. 7C, the metal-containing layer 120 has three film layers M1, M2, and M3, wherein the metal material of M1/M2/M3 can be formed as a multi-layer structure of Mo/Al/Mo.

Referring to FIG. 7D, the metal-containing layer 120 has four film layers M1, M2, M3, and M4, wherein the metal material of M1/M2/M3/M4 can be formed as a multi-layer structure of Mo/Al/Mo/Al.

Referring to FIG. 7E, the metal-containing layer 120 has five film layers M1, M2, M3, M4, and M5, wherein the metal material of M1/M2/M3/M4/M5 can be formed as Mo/Al/Mo/Al /Mo multilayer structure. In addition, as for the metal of the film layer M5, a metal with a thermal expansion coefficient matched with the barrier layer 140 can be selected.

In addition, regarding the type of metal material, a metal that can be operated by wet etching or dry etching can be selected, which is beneficial to the subsequent patterning process. Metals suitable for wet etching are, for example, molybdenum, chromium, aluminum, niobium, and neodymium. The metal suitable for dry etching is, for example, titanium.

In view of the above, the use of the metal-containing layer 120 with a multilayer structure of FIGS. 7B to 7E can reduce the stress of the coating, increase the thickness of the overall metal-containing layer 120, and suppress the foreign matter in the film layers M1~M5. The breakage.

8A to 8B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. The metal-containing layer 120 (first layer 122) of the flexible element array substrate 104 obtained after the peeling action S of FIG. 3H or FIG. 6H can be further processed to obtain the flexible element array substrate 201 as shown in FIG. 8A , Or the flexible element array substrate 202 shown in FIG. 8B.

In detail, referring to FIG. 8A first, the flexible device array substrate 201 of this embodiment has a display area AA and a bending area BA located on one side of the display area AA. The flexible element array substrate 201 includes a first film layer 240, a metal-containing layer 224 and an electronic element layer 230. The metal-containing layer 224 is disposed on the first surface 242 of the first film layer 240, and the metal-containing layer 224 is at least located in the bending area BA. The electronic element layer 230 is disposed on the second surface 244 of the first film layer 240, and the second surface 244 and the first surface 242 are opposite to each other.

Referring to FIG. 8A, the first film layer 240 may be a barrier layer, so that the metal-containing layer 224 and the electronic component layer 230 are not electrically connected. The metal-containing layer 224 can be used to improve the toughness and flexibility of the flexible device array substrate 201.

In this embodiment, the flexible element array substrate 201 may further include: a display element layer 260 disposed on the electronic element layer 230. The display element layer 260 includes: a first light-emitting element 262, a second light-emitting element 264, and a third light-emitting element 266 arranged adjacent to each other. The first light-emitting element 262 may be a red light-emitting diode, the second light-emitting element 264 may be a green light-emitting diode, and the third light-emitting element 266 may be a blue light-emitting diode. In addition, flexible packaging (Thin Film Encapsulation, TFE) may be used to encapsulate the first light-emitting element 262, the second light-emitting element 264, and the third light-emitting element 266, so that the display element layer 260 has a bendable property.

In addition, in this embodiment, the flexible element array substrate 201 may further include: an optical glue layer 270 disposed on the display element layer 260; and a cover lens layer 280 disposed on the optical glue layer 270. Using the optical adhesive layer 270 and the cover lens layer 280 can further improve the optical properties of the display element layer 260 and optimize the display effect of the display element layer 260.

Referring to FIG. 8A, the metal-containing layer 224 may include: a first portion 224A and a second portion 224B connected to each other. The first part 224A is arranged in the display area AA. The second part 224B is disposed in the bending area BA.

In addition, referring to FIG. 8B, in the flexible device array substrate 202 of this embodiment, the metal-containing layer 224 may include a first portion 224A and a second portion 224B that are separated from each other. The first part 224A is arranged in the display area AA. The second part 224B is disposed in the bending area BA. In this embodiment, the metal-containing layer 224 is segmented, so that the second portion 224B can function as a fan-out wiring.

9A-9B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 9A, the flexible device array substrate 201A of this embodiment is based on the flexible device array substrate 201 of FIG. 8A, and further includes a thickening pattern layer 290 disposed on the metal-containing layer 224.

Referring to FIG. 9B, the flexible device array substrate 202A of this embodiment is based on the flexible device array substrate 202 of FIG. 8B, and further includes: a thickened pattern layer 290 disposed on the first portion 224A of the metal-containing layer 224 .

In the embodiment of FIGS. 9A and 9B, the pattern of the metal-containing layer 224 may be used as an electroplating seed layer. In addition, the electroplating method is used to locally thicken the metal layer in areas that require structural protection or electromagnetic shielding protection to form the thickened pattern layer 290. The thickness of the thickened pattern layer 290 is, for example, 1 to 1000 μm, and the commonly used thickness is less than 100 μm. For example, copper can be used as the electroplating metal to form the thickened pattern layer 290 of copper with a thickness of 40 μm.

10A to 10C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 10A, in the flexible device array substrate 203 of this embodiment, the first film layer 240 includes a bending portion 240A. The metal-containing layer 224 is disposed on the bending portion 240A. It is also possible to further provide a thickening pattern layer 290 on the metal-containing layer 224 located at the bent portion 240A. The flexible element array substrate 203 of FIG. 10A is shown in an unfolded state.

Referring to FIGS. 10B and 10C, the apparent, the bending direction of the bent portion 242, the first light emitting element 262, a second light emitting element 264 and the third light emitting element L _R 266 in a direction, L _G, L _B contrary.

Referring to FIG 10B, the flexible element array substrate 204 of this embodiment, the first light emitting element 262, a second light emitting element L _R 264 and the direction of the third light emitting element 266, L _G, L _B in FIG. 10B towards Below, and the bending part 240A is bent upward in FIG. 10B.

Referring to FIG. 10C, the flexible element array substrate 205 of this embodiment, the first light emitting element 262, a second light emitting element 264 and the third light emitting element L _R 266 in a direction, L _G, L _B of FIG. 10C toward Above, and the bending part 240A is bent downward in FIG. 10C.

Please refer to FIGS. 10B and 10C again. After bending, a thickening pattern layer 290 is further provided on the metal-containing layer 224 of the bending portion 240A to serve as a protective structure or electromagnetic shielding at the position of the bending portion 240A. structure. After the first film layer 240 is bent, the thickening pattern layer 290 is set by electroplating method or the like. In this way, the neutral axis of the first film layer 240 is not changed, which is beneficial to the stability of the overall structure.

FIG. 11 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. 11, in the flexible device array substrate 206 of this embodiment, the pattern of the metal-containing layer 224 corresponds to the interval D between the first light-emitting element 262, the second light-emitting element 264, and the third light-emitting element 266. . In this way, in the flexible element array substrate 206, the light transmittance of the light emitted by the first light-emitting element 262, the second light-emitting element 264, and the third light-emitting element 266 can be improved, and the strength of the overall structure can be improved.

FIG. 12A is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12B is a schematic bottom view of the flexible element array substrate of FIG. 12A. 12A, the flexible device array substrate 207 of this embodiment is based on the flexible device array substrate 206 of FIG. 11, and further includes a thickening pattern layer 290 disposed on the pattern of the metal-containing layer 224.

Similarly, in the embodiments of FIGS. 12A and 12B, the pattern of the metal-containing layer 224 may be used as an electroplating seed layer. In addition, the electroplating method is used to locally thicken the metal layer in areas that require structural protection or electromagnetic shielding protection to form the thickened pattern layer 290. The thickness of the thickened pattern layer 290 is, for example, 1 to 1000 μm, and the commonly used thickness is less than 100 μm. For example, copper can be used as the electroplating metal to form the thickened pattern layer 290 of copper with a thickness of 40 μm.

FIG. 13 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. Please refer to FIG. 13, the flexible device array substrate 208 of this embodiment except for a first film layer 252, a metal-containing layer 224, an electronic device layer (not shown), a display device layer 260 (containing a first light-emitting element 262, a second light-emitting element) In addition to the element 264 and the third light-emitting element 266), the optical adhesive layer 270 and the cover lens layer 280, it also includes: a second film layer 254, which carries the display element layer 260; and the color filter pattern layer 300, which corresponds to the display element layer 260 However, the color filter pattern layer 300 includes: a first filter pattern 310, a second filter pattern 320, and a third filter pattern 330 arranged adjacent to each other; and a thickened pattern layer 290 arranged on the first film On the metal-containing layer 224 of the bent portion 252A of the layer 252; wherein the color filter pattern layer 300 is located between the first film layer 252 and the second film layer 254, and the first film layer 252 and the second film layer 254 are Flexible substrate.

The flexible element array substrate 208 of this embodiment may have a double-layer flexible substrate, and the flexible substrate may use a polyimide (PI) substrate. In addition, a metal-containing layer 224 is provided on the bent portion 252A, and the metal-containing layer 224 is used as an electroplating seed layer to fabricate the thickened pattern layer 290.

In summary, the flexible element array substrate and the method for manufacturing the flexible element array substrate of the present invention form a film layer of a metal oxide layer with a high oxidation number between the substrate and the metal containing the metal layer through a thermal process. . In this film layer, due to the weak cohesion of the metal oxide, a peeling interface is formed. Through this peeling interface, a part of the first layer and the substrate can be easily separated, and the second layer containing the metal layer and the electronic component layer above it can be easily removed together. In this way, the manufacturing yield of the flexible element array substrate can be improved, and a flexible element array substrate with good toughness can be obtained.

Furthermore, the flexible element array substrate and the manufacturing method of the flexible element array substrate of the present invention can perform further processing (such as patterning process, thickening process, etc.) on the metal-containing layer after the peeling action, thereby improving flexibility The light penetration strength, protection, toughness and flexibility of the element array substrate. In addition, it is possible to locally thicken the metal layer for areas that require structural protection or electromagnetic shielding protection.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.

100, 101, 102, 103, 104: flexible element array substrate 105, 106: flexible element array substrate 110: substrate 120: metal-containing layer 122: first layer 122A: first metal oxide 124: second layer 124A: first Two metal oxide 130: electronic component layer 140: barrier layer 150: flexible layer 160: display element layer 162: first light-emitting element 164: second light-emitting element 166: third light-emitting element 170: optical glue layer 180: cover lens layer 190: thickened pattern layer 201, 201A, 202, 202A: flexible element array substrate 203, 204, 205, 206, 207, 208: flexible element array substrate 224: metal-containing layer 224A: first part of metal-containing layer 224B: containing The second part of the metal layer 230: electronic component layer 240, 252: first film layer 240A, 252A: bending part 242: first surface 244: second surface 254: second film layer 260: display element layer 262: first A light-emitting element 264: second light-emitting element 266: third light-emitting element 270: optical glue layer 280: cover lens layer 290: thickening pattern layer 300: color filter pattern layer 310: first filter pattern 320: second filter light pattern 330: third filter patterns AA: display area BA: bending area D: distance F: interface peeled H: thermal process _{L R, L G, L B} : light direction M1, M2, M3, M4, M5: Film S: Peeling action V: Rapid thermal annealing process

1A to 1C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. FIG. 2 is a schematic diagram of peeling the flexible element array substrate of FIG. 1A. 3A to 3H are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention. 4A is an X-ray Photoelectron Spectroscopy (X-ray Photoelectron Spectroscopy) of the surface of naturally oxidized molybdenum metal when the metal of the metal-containing layer is molybdenum. 4B is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located above the peeling interface when the metal of the metal-containing layer is molybdenum. 4C is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located below the peeling interface when the metal of the metal-containing layer is molybdenum. FIG. 5 illustrates a graph of the threshold voltage change (Vth shift) of the electronic device layer of the flexible device array substrate according to an embodiment of the present invention as a function of stress time, and the conventional use A graph showing the change of the threshold voltage of the electronic element layer of the flexible element array substrate of the flexible base with the pressure time. 6A to 6J are schematic diagrams of the steps of a manufacturing method of a flexible element array substrate according to an embodiment of the present invention. 7A to 7E are schematic diagrams of the cross-sectional structure of the metal-containing layer according to the embodiment of the present invention. 8A to 8B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 9A-9B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 10A to 10C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12A is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12B is a schematic bottom view of the flexible element array substrate of FIG. 12A. FIG. 13 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention.

100: Flexible component array substrate

110: substrate

120: Metal-containing layer

122: first layer

122A: first metal oxide

124: The second layer

124A: second metal oxide

130: Electronic component layer

F: Stripping interface

Claims (36)

A flexible element array substrate, including: A substrate; A metal-containing layer is disposed on the substrate, and the metal-containing layer includes: A first layer located on the side close to the substrate, the first layer containing a first metal oxide to form a peeling interface in the first layer; and A second layer is located on the side away from the substrate. The second layer contains a second metal oxide, wherein the oxidation number of the metal in the second metal oxide is smaller than that of the metal in the first metal oxide The number of oxidation values; and An electronic component layer is arranged above the metal-containing layer. The flexible element array substrate according to claim 1, wherein: The metal of the metal-containing layer is selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium and combinations thereof. The flexible element array substrate according to claim 1, wherein: The metal-containing layer includes a single-layer structure. The flexible element array substrate according to claim 1, wherein: The metal-containing layer includes a multilayer structure. The flexible element array substrate according to claim 1, wherein: The second layer contains a metal with zero oxidation number. The flexible element array substrate according to claim 1, further comprising: A barrier layer is arranged between the metal-containing layer and the electronic component layer. The flexible element array substrate according to claim 6, further comprising: A flexible layer is arranged between the barrier layer and the metal-containing layer. The flexible element array substrate according to claim 1, further comprising: A display element layer disposed on the electronic element layer, The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element arranged adjacent to each other. The flexible element array substrate according to claim 8, further comprising: An optical adhesive layer disposed on the display element layer; and A cover lens layer is arranged on the optical glue layer. A method for manufacturing a flexible element array substrate includes: Provide a substrate; Forming a metal-containing layer on the substrate; A thermal process is provided to form a first layer and a second layer on the metal-containing layer. The first layer is located on the side close to the substrate. The first layer contains a first metal oxide to form a first layer and a second layer. A peeling interface is formed in the second layer, the second layer is located on the side away from the substrate, and the second layer contains a second metal oxide. The oxidation number of the metal in the second metal oxide is smaller than that of the first metal. The oxidation value of the metal in the oxide; Forming an electronic component layer above the metal-containing layer; and A peeling action is performed to separate a part of the first layer and the substrate through the peeling interface. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The metal of the metal-containing layer is selected from: molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium and combinations thereof. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The metal-containing layer includes a single-layer structure. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The metal-containing layer includes a multilayer structure. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The second layer contains a metal with zero oxidation number. The manufacturing method of the flexible element array substrate according to claim 10 further includes: A barrier layer is formed between the metal-containing layer and the electronic component layer. The manufacturing method of the flexible element array substrate according to claim 10 further includes: On the electronic element layer, a display element layer is formed, The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element arranged adjacent to each other. The manufacturing method of the flexible element array substrate according to claim 16 further includes: On the display element layer, an optical glue layer and a cover lens layer are sequentially formed. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The temperature range of this thermal process is 350°C to 650°C. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The temperature range of this thermal process is 500°C to 650°C. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The thermal process is performed before the step of forming the electronic component layer. The manufacturing method of the flexible element array substrate according to claim 10, wherein: The thermal process is performed in the step of forming the electronic component layer. The manufacturing method of the flexible element array substrate according to claim 10, wherein: Before the step of forming the electronic element layer, it further includes performing a rapid thermal annealing process. The manufacturing method of the flexible element array substrate according to claim 10 further includes: A patterning process is performed to leave the pattern of the second layer at least in the bending area of the flexible device array substrate. The manufacturing method of the flexible element array substrate according to claim 23 further includes: A thickened pattern layer is formed on the pattern of the second layer. A flexible element array substrate has a display area and a bending area on one side of the display area. The flexible element array substrate includes: A first film layer; A metal-containing layer disposed on a first surface of the first film layer, and the metal-containing layer is located at least in the bending area; and An electronic component layer is disposed on a second surface of the first film layer, and the second surface and the first surface are opposite to each other. The flexible element array substrate according to claim 25 further includes: A display element layer disposed on the electronic element layer, The display element layer includes: a first light-emitting element, a second light-emitting element, and a third light-emitting element arranged adjacent to each other. The flexible element array substrate according to claim 26 further includes: An optical adhesive layer disposed on the display element layer; and A cover lens layer is arranged on the optical glue layer. The flexible element array substrate according to claim 25, wherein the metal-containing layer includes: A first part and a second part connected to each other, The first part is arranged in the display area, The second part is arranged in the bending area. The flexible element array substrate according to claim 28 further includes: A thickened pattern layer is arranged on the metal-containing layer. The flexible element array substrate according to claim 25, wherein the metal-containing layer includes: A first part and a second part separated from each other, The first part is arranged in the display area, The second part is arranged in the bending area. The flexible element array substrate according to claim 30 further includes: A thickening pattern layer is arranged on the first part of the metal-containing layer. The flexible element array substrate according to claim 26, wherein the first film layer includes: a bending part, The metal-containing layer is disposed on the bending part; The bending direction of the bending portion is opposite to the light emitting direction of the first light emitting element, the second light emitting element and the third light emitting element. The flexible element array substrate according to claim 32 further includes: A thickening pattern layer is arranged on the metal-containing layer at the bending portion. The flexible element array substrate according to claim 26, wherein: The pattern of the metal-containing layer is arranged corresponding to the interval between the first light-emitting element, the second light-emitting element, and the third light-emitting element. The flexible element array substrate according to claim 34 further includes: A thickened pattern layer is arranged on the pattern of the metal-containing layer. The flexible element array substrate according to claim 26 further includes: A second film layer, carrying the display element layer; A color filter pattern layer is provided corresponding to the display element layer, and the color filter pattern layer includes: a first filter pattern, a second filter pattern, and a third filter pattern arranged adjacent to each other; as well as A thickened patterned layer disposed on the metal-containing layer located at the bent portion of the first film layer; Wherein, the color filter pattern layer is located between the first film layer and the second film layer, The first film layer and the second film layer are flexible substrates.

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