TWI775720B - Flexible device array substrate and manufacturing method of flexible device array substrate - Google Patents

Abstract

A flexible element array substrate includes a substrate, a metal-containing layer, and an electronic component layer. The metal-containing layer is disposed on the substrate. The metal-containing layer includes: a first layer and a second layer. The first layer is located on a side close to the substrate, and the first layer contains a first metal oxide to form a peeling interface in the first layer. The second layer is located on a side away from the substrate, and the second layer contains a second metal oxide. The oxidation number of the metal in the second metal oxide is smaller than the oxidation number of the metal in the first metal oxide. The electronic component layer is disposed above the metal-containing layer. A method for manufacturing the flexible element array substrate is also provided.

Description

Flexible element array substrate and manufacturing method of flexible element array substrate

The present invention relates to an element array substrate and a manufacturing method of the element array substrate, and in particular, to a flexible element array substrate and a manufacturing method of the flexible element array substrate.

Generally speaking, the manufacturing method of the bendable flexible display panel includes: a flexible device array substrate manufacturing process and a module manufacturing process.

The flexible device array substrate manufacturing process includes the following steps. First, a glass carrier is provided. Next, a flexible substrate, such as a polyimide (PI) substrate, is formed on the glass carrier. Next, a barrier layer is formed on the flexible substrate. Then, on the blocking layer, an electronic element layer, a display element layer, an optical clear adhesive layer (OCA layer) and a cover lens layer are sequentially formed. Finally, using laser lift off or mechanical debonding, the glass carrier plate is peeled off from the flexible substrate, so far, the flexible substrate, barrier layer, electronic element layer, display element layer, A flexible element array substrate composed of an optical glue layer and a cover lens layer.

In addition, the module manufacturing process includes the following steps. First, a pressure sensitive adhesive (PSA) and a back foil (BF) are sequentially arranged on one side of the flexible base of the above-mentioned flexible element array substrate. After that, on one side of the back foil, pressure-sensitive adhesive and stainless steel foil (SUS foil) are arranged in sequence. The arrangement of the stainless steel foil makes the flexible element array substrate have bendable toughness.

However, in the above-mentioned manufacturing process of the flexible element array substrate, during the process of peeling the glass carrier plate from the flexible substrate, the flexible element array substrate is prone to breakage due to uneven stress. Furthermore, since the structure of the multiple film layers of the flexible device array substrate has no anti-cracking effect, defects are easily generated in the interior of the multiple film layers, which may cause bubbles, cracks or peeling.

The present invention provides a flexible element array substrate and a manufacturing method of the flexible element array substrate, which can provide a flexible element array substrate with a good structure.

The present invention provides a flexible element array substrate, comprising: a substrate, a metal-containing layer, and an electronic element layer. The metal-containing layer is disposed on the substrate. The metal-containing layer includes: a first layer on a side close to the substrate, the first layer containing a first metal oxide to form a lift-off interface in the first layer; and a second layer on a side away from the substrate, the second layer The layer contains a second metal oxide, wherein the oxidation number of the metal in the second metal oxide is lower than the oxidation number of the metal in the first metal oxide. The electronic element layer is disposed above the metal-containing layer.

In an embodiment of the present invention, the metal of the metal-containing layer is selected from molybdenum (Mo), vanadium (V), niobium (Nb), tantalum (Ta), tungsten (W), rhenium (Re), chromium (Cr) and combinations thereof.

In an embodiment of the present invention, the metal-containing layer includes: a single-layer structure.

In an embodiment of the present invention, the metal-containing layer includes: a multi-layer structure.

In an embodiment of the present invention, the second layer contains a metal with zero oxidation valence.

In an embodiment of the present invention, it further includes: a blocking layer disposed between the metal-containing layer and the electronic element layer.

In an embodiment of the present invention, it further includes: a flexible layer disposed between the barrier layer and the metal-containing layer.

In an embodiment of the present invention, it further includes: a display element layer disposed on the electronic element layer. The display element layer includes a first light emitting element, a second light emitting element and a third light emitting element which are arranged adjacent to each other.

In an embodiment of the present invention, it further includes: an optical adhesive layer disposed on the display element layer; and a cover lens layer disposed on the optical adhesive layer.

The present invention provides a manufacturing method of a flexible element array substrate, which includes: providing a substrate; forming a metal-containing layer on the substrate; side, the first layer contains a first metal oxide to form a lift-off interface in the first layer, the second layer is located on the side away from the substrate, the second layer contains a second metal oxide, wherein the second metal oxide The oxidation valence of the metal in the metal oxide is lower than the oxidation valence of the metal in the first metal oxide; the electronic element layer is formed above the metal-containing layer; and a peeling operation is performed to separate a part of the first layer and the substrate.

In one embodiment of the present invention, the metal of the metal-containing layer is selected from the group consisting of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.

In an embodiment of the present invention, the metal-containing layer includes: a single-layer structure.

In an embodiment of the present invention, the metal-containing layer includes: a multi-layer structure.

In an embodiment of the present invention, the second layer contains a metal with zero oxidation valence.

In an embodiment of the present invention, the method further includes: forming a barrier layer between the metal-containing layer and the electronic device layer.

In an embodiment of the present invention, the method further includes: forming a display element layer on the electronic element layer. The display element layer includes a first light emitting element, a second light emitting element and a third light emitting element which are arranged adjacent to each other.

In an embodiment of the present invention, the method further includes: forming an optical adhesive layer and a cover lens layer in sequence on the display element layer.

In an embodiment of the present invention, the temperature range of the thermal process is 350°C to 650°C.

In one embodiment of the present invention, the temperature range of the thermal process is 500°C to 650°C.

In one embodiment of the present invention, the thermal process is performed before the step of forming the electronic device layer.

In an embodiment of the present invention, the thermal process is performed in the step of forming the electronic device layer.

In an embodiment of the present invention, before the step of forming the electronic device layer, a rapid thermal annealing process is further included.

In an embodiment of the present invention, after the peeling operation, at least the pattern of the second layer is left in the bending area of the flexible device array substrate.

In an embodiment of the present invention, the method further includes: forming a thickened pattern layer on the pattern of the second layer.

The present invention also provides a flexible element array substrate, which has a display area and a bending area located on one side of the display area. The flexible element array substrate includes: a first film layer, a metal-containing layer and an electronic element layer. The metal-containing layer is disposed on the first surface of the first film layer, and the metal-containing layer is located at least in the bending region. The electronic component layer is arranged on the second surface of the first film layer, and the second surface and the first surface are opposite to each other.

In an embodiment of the present invention, it further includes: a display element layer disposed on the electronic element layer. The display element layer includes a first light emitting element, a second light emitting element and a third light emitting element which are arranged adjacent to each other.

In an embodiment of the present invention, it further includes: an optical adhesive layer disposed on the display element layer; and a cover lens layer disposed on the optical adhesive layer.

In an embodiment of the present invention, the metal-containing layer includes a first portion and a second portion that are connected to each other. The first part is arranged in the display area. The second part is arranged in the bending area. In an embodiment of the present invention, the method further includes: a thickened pattern layer disposed on the metal-containing layer.

In one embodiment of the present invention, the metal-containing layer includes a first portion and a second portion that are separated from each other. The first part is arranged in the display area. The second part is arranged in the bending area. In an embodiment of the present invention, it further includes: a thickened pattern layer disposed on the first portion of the metal-containing layer.

In an embodiment of the present invention, the first film layer includes: a bent portion. The metal-containing layer is disposed on the bent portion. The bending direction of the bending portion is opposite to the light-emitting direction of the first light-emitting element, the second light-emitting element and the third light-emitting element. In an embodiment of the present invention, the method further includes: a thickened pattern layer disposed on the metal-containing layer located at the bent portion.

In an embodiment of the present invention, the pattern of the metal-containing layer is arranged corresponding to the interval between the first light-emitting element, the second light-emitting element and the third light-emitting element. In an embodiment of the present invention, the method further includes: a thickened pattern layer disposed on the pattern containing the metal layer.

In an embodiment of the present invention, it further includes: a second film layer, which supports the display element layer; a color filter pattern layer, which is arranged corresponding to the display element layer, and the color filter pattern layer includes: first adjacent to each other. a filter pattern, a second filter pattern and a third filter pattern; and a thickening pattern layer disposed on the metal-containing layer located at the bent portion of the first film layer; wherein the color filter pattern layer is located on the first film Between the layer and the second film layer, the first film layer and the second film layer are flexible substrates.

Based on the above, in the flexible device array substrate and the manufacturing method of the flexible device array substrate according to the embodiment of the present invention, a film layer of a metal oxide layer with a high oxidation number is formed between the substrate and the metal containing the metal layer through a thermal process. , and further, a peel interface is formed in this film layer. Through this peeling interface, a part of the first layer and the substrate can be easily separated, and the second layer containing the metal layer and the electronic element layer above it can be easily removed together, and further, the fabrication quality of the flexible element array substrate can be improved. rate, and an improved flexible element array substrate with good toughness is obtained.

Furthermore, the flexible element array substrate and the manufacturing method of the flexible element array substrate of the present invention can further process the metal-containing layer (such as patterning process, thickening process, etc.) Penetration strength, protection, toughness and flexibility can also be used for local thickening of metal layers for areas that require structural protection or electromagnetic shielding protection.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following specific embodiments are given and described in detail as follows in conjunction with the accompanying drawings.

1A to 1C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. In the embodiments of FIGS. 1A to 1C , the same components are marked with the same component symbols for related description.

Referring to FIG. 1A , the flexible device array substrate 100 of this embodiment includes a substrate 110 , a metal-containing layer 120 , and an electronic device layer 130 . The metal-containing layer 120 is disposed on the substrate 110 . The metal-containing layer 120 includes a first layer 122 and a second layer 124 . The first layer 122 is located on the side close to the substrate 110 . The first layer 122 contains the first metal oxide 122A to form the lift-off interface F in the first layer 122 . The second layer 124 is located on the side away from the substrate 110 . The second layer 124 contains the second metal oxide 124A. The oxidation number of the metal in the second metal oxide 124A is smaller than the oxidation number of the metal in the first metal oxide 122A. The electronic element layer 130 is disposed above the metal-containing layer 120 .

Referring to FIG. 1A , the substrate 110 may be a glass substrate or a non-glass substrate on which an oxide layer is deposited (the function of the oxide layer is to provide oxygen atoms). In the example of using a glass substrate as the substrate 110 , since the main component of the glass is silicon dioxide, the silicon dioxide can also provide oxygen atoms, so that the metal of the metal-containing layer 120 can be oxidized with the oxygen atoms.

The metal of the metal-containing layer 120 may be a transition metal having multiple oxidation states. In one embodiment, the metal of the metal-containing layer 120 is selected from the group consisting of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof. In detail, the metal of the metal-containing layer 120 can be: metal molybdenum (Mo), or a high-temperature metal similar to molybdenum, or a metal with an “acidic metal oxide”, such as: vanadium, niobium, tantalum, tungsten, Rhenium, Chromium.

Referring to FIG. 1A , the first layer 122 contains a first metal oxide 122A. The first metal oxide 122A is a metal oxide with a high oxidation valence. Because of its weak cohesion force, a peel interface F is formed in the first layer 122 . By this peeling interface F, the interlayer separation of the first layer 122 can be easily performed, and a part of the first layer 122 and the substrate 110 can be easily separated. In this way, the influence of the stress of the peeling action on the film layer in the flexible device array substrate 100 can be reduced, and the cracking of the film layer can be reduced. In addition, the second layer 124 may contain a metal with zero oxidation valence, that is, the second layer 124 may contain a metal that has not reacted with oxygen atoms.

Referring to FIG. 1A , the electronic device layer 130 may be an active device array layer. The active element can be, for example, a thin film transistor or other suitable switching element, which is not limited herein.

Referring to FIG. 1B , the flexible device array substrate 101 of this embodiment may further include: a barrier layer 140 disposed between the metal-containing layer 120 and the electronic device layer 130 . The barrier layer 140 may be stacked using an inorganic layer of oxynitride. By disposing the insulating layer 140 , the electrical connection between the electronic element layer 130 and the metal-containing layer 120 can be isolated, so as to prevent the electrical properties of the electronic element layer 130 from being affected by the metal of the metal-containing layer 120 .

Referring to FIG. 1C , the flexible device array substrate 102 of this embodiment may further include: a flexible layer 150 disposed between the barrier layer 140 and the metal-containing layer 120 . The material of the flexible layer 150 may be polyimide (PI). By disposing the flexible layer 150 , the flexibility of the flexible element array substrate 102 can be improved.

FIG. 2 is a schematic diagram of peeling off the flexible element array substrate of FIG. 1A . 1A and FIG. 2 , after the electronic device layer 130 is completed, an external force is applied to the flexible device array substrate 100 to perform the peeling action S, and a part of the first layer 122 and the substrate 110 are separated through the peeling interface F.

During the manufacturing process of the flexible device array substrate 100 , energy may be applied to the interface between the metal-containing layer 120 and the substrate 110 (eg, a thermal process). At this time, oxygen atoms from the substrate 110 will oxidize the metal-containing layer 120 . , and between the substrate 110 and the metal-containing layer 120 : the first layer 122 containing the first metal oxide 122A is generated.

With the influence of diffusion, the second layer 124 on the side away from the substrate 110 receives less oxygen atoms than the first layer 122; therefore, the second metal contained in the second layer 124 oxidizes The oxidation valence of the metal in the metal oxide 124A is smaller than the oxidation valence of the metal in the first metal oxide 122A of the first layer 122 . In addition, the second layer 124 may also contain a metal with zero oxidation valence, that is, a metal that has not reacted with oxygen atoms.

It can be noticed that, after the thermal process, inside the first layer 122 of the first metal oxide 122A with a high oxidation valence, due to the reduced cohesion of the first metal oxide 122A, a peeling interface F that can be easily peeled off is generated . That is to say, when a part of the first layer 122 and the substrate 110 are separated by the peeling interface F, the applied external force will not affect the electronic element layer 130 , and the production yield of electronic elements in the electronic element layer 130 can be improved. .

3A to 3H are schematic flowcharts of steps of a method for fabricating a flexible device array substrate according to an embodiment of the present invention.

Please refer to FIG. 3A to FIG. 3E first to understand the manufacturing process of the flexible device array substrate 101 according to the embodiment of the present invention.

Referring to FIG. 3A , first, a substrate 110 is provided. The substrate 110 may be a glass substrate, or a non-glass substrate with an oxide layer deposited thereon. As described above, the substrate 110 may provide oxygen atoms so that the metal of the subsequent metal-containing layer 120 can be oxidized with the oxygen atoms.

Referring to FIG. 3B , a metal-containing layer 120 is formed on the substrate 110 . The metal of the metal-containing layer 120 may be a transition metal having multiple oxidation states. In one embodiment, the metal of the metal-containing layer 120 may be selected from the group consisting of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.

In one embodiment, the metal of the metal-containing layer 120 may be molybdenum oxide (MoO) with divalent molybdenum (Mo ²⁺ ). In another embodiment, the metal of the metal-containing layer 120 may be molybdenum metal, having zero-valent molybdenum (Mo). That is, the metal-containing layer 120 may include a metal having a zero oxidation valence, or a combination of a metal having a zero oxidation valence and a metal oxide of a metal having a low oxidation valence.

Referring to FIG. 3C , a blocking layer 140 may be formed on the metal-containing layer 120 . The barrier layer 140 may be stacked using an inorganic layer of oxynitride. The barrier layer 140 can prevent the metal-containing layer 120 located below from having an electrical influence on other film layers formed above.

Referring to FIG. 3D , a thermal process H is provided to form the first layer 122 and the second layer 124 from the metal-containing layer 120 . The first layer 122 is located on the side close to the substrate 110 . The first layer contains the first metal oxide 122A to form the lift-off interface F in the first layer 122 . The second layer 124 is located on the side away from the substrate 110 . The second layer 124 contains the second metal oxide 124A. The oxidation number of the metal in the second metal oxide 124A is smaller than the oxidation number of the metal in the first metal oxide 122A.

Please refer to FIG. 3D and FIG. 3E at the same time, it can be known that the thermal process H is performed before the step of forming the electronic device layer 130 (as shown in the subsequent FIG. 3E ). The temperature range of thermal process H may be 350°C to 650°C. In another embodiment, the temperature range of the thermal process H may also be 500°C to 650°C.

Referring to FIG. 3E , an electronic device layer 130 is formed on the metal-containing layer 120 . The electronic element layer 130 may be an active element array layer. The active element can be, for example, a thin film transistor or other suitable switching element. So far, the flexible device array substrate 101 as shown in FIG. 1B can be fabricated.

In addition, please continue to refer to FIG. 3A to FIG. 3E and FIG. 3F to understand the manufacturing process of the flexible device array substrate 103 according to the embodiment of the present invention.

After the steps in FIGS. 3A to 3E , as shown in FIG. 3F , a display element layer 160 may also be formed on the electronic element layer 130 . The display element layer 160 may include: a first light emitting element 162, a second light emitting element 164 and a third light emitting element 166 which are arranged adjacent to each other. So far, the fabrication of the flexible element array substrate 103 is completed.

That is to say, referring to FIG. 3F , the flexible device array substrate 103 of this embodiment may further include: a display device layer 160 disposed on the electronic device layer 130 . The display element layer 160 includes: a first light emitting element 162, a second light emitting element 164 and a third light emitting element 166 which are arranged adjacent to each other.

The first light-emitting element 162 may be a red light-emitting diode, the second light-emitting element 164 may be a green light-emitting diode, and the third light-emitting element 166 may be a blue light-emitting diode. In addition, the first light emitting element 162 , the second light emitting element 164 and the third light emitting element 166 may be encapsulated by thin film encapsulation (TFE), so that the display element layer 160 has a bendable property.

In addition, please continue to refer to FIGS. 3A to 3E and FIGS. 3F to 3G to understand the manufacturing process of the flexible device array substrate 104 according to the embodiment of the present invention.

After the steps in FIGS. 3A to 3F , as shown in FIG. 3G , an optical adhesive layer 170 and a cover lens layer 180 may be formed on the display element layer 160 in sequence. So far, the fabrication of the flexible element array substrate 104 is completed.

3G , the flexible element array substrate 104 of this embodiment may further include: an optical adhesive layer 170 disposed on the display element layer 160 ; and a cover lens layer 180 disposed on the optical adhesive layer 170 . Using the optical adhesive layer 170 and the cover lens layer 180 can further improve the optical properties of the display element layer 160 and optimize the display effect of the display element layer 160 .

Referring to FIG. 3H , after the fabrication of the flexible device array substrate 104 is completed, the peeling operation S may be further performed. A part of the first layer 122 and the substrate 110 are separated by peeling the interface F (as shown in FIG. 3G ). It should be noted that the peeling action S can also be performed after the fabrication of the flexible device array substrate 101 as shown in FIG. 3E is completed; or, the peeling action S can also be performed after the flexible device array substrate as shown in FIG. 3F is completed. After the production of 103 is carried out.

Based on the above, in the manufacturing method of the flexible element array substrates 100 , 101 , 102 , 103 and 104 according to the embodiments of the present invention, the metal-containing layer 120 is provided on the substrate 110 (eg, a glass substrate). By performing thermal process H on the interface between the substrate 110 and the metal-containing layer 120, a first layer 122 (a first metal oxide 122A with a high oxidation valence) and a second layer 124 (a low oxidation valence) are formed number of second metal oxides 122B).

Since the first metal oxide 122A is a metal oxide with a high oxidation valence, its cohesion is low, and a peel interface F is formed in the first layer 122 . By this peeling interface F, the interlayer separation of the first layer 122 can be easily performed. In this way, a part of the first layer 122 and the substrate 110 can be easily separated, and the film layers in the flexible element array substrates 100 , 101 , 102 , 103 , and 104 can be less affected by peeling stress, which can reduce the breakage of the film layers. crack.

4A is an X-ray photoelectron spectrum diagram of the surface of the naturally oxidized molybdenum metal when the metal of the metal-containing layer is molybdenum. 4B is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located above the exfoliation interface when the metal of the metal-containing layer is molybdenum. 4C is an X-ray photoelectron spectrum diagram of the first layer of a part of the metal-containing layer located below the peeling interface when the metal of the metal-containing layer is molybdenum. In FIGS. 4A to 4C , the horizontal axis is the binding energy (eV), and the vertical axis is the count value/sec.

Referring to FIG. 3B and FIG. 4A at the same time, when the metal of the metal-containing layer 120 is molybdenum metal (Mo) and has zero-valent molybdenum (Mo), the surface of the molybdenum metal will be naturally oxidized. As shown by the wave peaks Mo3d3 (MoO ₃ ) and the wave peaks Mo3d5 (MoO ₃ ) in FIG. 4A , it can be seen that the composition of the naturally oxidized molybdenum metal surface is mainly MoO ₃ . In addition, as shown by the peaks Mo3d3 (Mo-Mo) and the peaks Mo3d5 (Mo-Mo) in FIG. 4A , it can be seen that the composition of the naturally oxidized molybdenum metal surface also has molybdenum metal. Furthermore, as shown by the peaks Mo3d3 (MoO ₂ ) and the peaks Mo3d5 (MoO ₂ ) in FIG. 4A , it can be seen that the composition of the naturally oxidized molybdenum metal surface also has MoO ₂ .

After calculation, the atomic percentages of the peak Mo3d5 (Mo-Mo), the peak Mo3d5 (MoO ₂ ), and the peak Mo3d5 (MoO ₃ ) are 28.3%: 15.1%: 56.6%.

Referring to FIGS. 3G to 3H and FIG. 4B at the same time, X-ray photoelectron spectroscopy analysis is performed on the first layer 122 of a part of the metal-containing layer 120 located above the peeling interface F, and the X-ray shown in FIG. 4B can be obtained. Photoelectron spectroscopy.

As shown by the wave peaks Mo3d3 (MoO ₂ ) and the wave peaks Mo3d5 (MoO ₂ ) in FIG. 4B , it can be seen that the first layer 122 of a part of the metal-containing layer 120 located above the peeling interface F has a surface composition of MoO ₂ dominated. In addition, as shown by the peaks Mo3d3 (Mo-Mo) and the peaks Mo3d5 (Mo-Mo) in FIG. 4B , it can be seen that the surface of the first layer 122 of a part of the metal-containing layer 120 located above the peeling interface F has The composition also has molybdenum metal.

After calculation, the atomic percentage between the peak Mo3d5 (Mo-Mo) and the peak Mo3d5 (MoO ₂ ) is 73.2%: 26.8%. That is, the first layer 122 that is a part of the metal-containing layer 120 located above the lift-off interface F is composed of a metal with a zero oxidation number and a metal oxide with a low oxidation number.

Referring to FIGS. 3G to 3H and FIG. 4C at the same time, X-ray photoelectron spectroscopy analysis is performed on the first layer 122 of a part of the metal-containing layer 120 located below the peeling interface F, and the X-ray shown in FIG. 4C can be obtained. Photoelectron spectroscopy.

As shown by the wave peaks Mo3d3 (MoO ₃ ) and the wave peaks Mo3d5 (MoO ₃ ) in FIG. 4C , it can be seen that the surface composition of the first layer 122 , which is a part of the metal-containing layer 120 below the peeling interface F, is as follows: MoO ₃ dominated. In addition, as shown by the wave peaks Mo3d3 (MoO ₂ ) and the wave peaks Mo3d5 (MoO ₂ ) in FIG. 4C , it can also be seen that the first layer 122 of a part of the metal-containing layer 120 located below the peeling interface F has a surface of the first layer 122 . The composition also has MoO ₂ . Furthermore, as shown by the peaks Mo3d3 (Mo-Mo) and the peaks Mo3d5 (Mo-Mo) in FIG. 4C , it can also be seen that the first layer 122 of a part of the metal-containing layer 120 located below the peeling interface F, The composition of its surface also has a very small amount of molybdenum metal.

After calculation, the atomic percentages of the peak Mo3d5 (Mo-Mo), the peak Mo3d5 (MoO ₂ ), and the peak Mo3d5 (MoO ₃ ) are 0.6%: 24.6%: 74.8%. That is, the first layer 122 , which is a part of the metal-containing layer 120 located below the peel interface F, is composed of a metal oxide with a high oxidation valence.

3B and 4A, FIGS. 3G to 3H and 4B, and FIGS. 3G to 3H and 4C, it can be seen that, taking the molybdenum metal as an example, compared with the surface of the naturally oxidized molybdenum metal (the composition is MoO _{3 )} Mainly), after the thermal process H (as shown in FIG. 3D ) is performed, molybdenum oxides with different oxidation numbers are formed in the metal-containing layer 120 , and further, a peeling interface F is formed in the metal-containing layer 120 .

It can be seen from FIG. 4B that the surface composition of the first layer 122 of a part of the metal-containing layer 120 located above the peeling interface F is mainly MoO ₂ (metal oxide with low oxidation valence); and, from FIG. 4C It can be seen that the composition of the surface of the first layer 122 , which is a part of the metal-containing layer 120 located below the peel interface F, is mainly MoO ₃ (a metal oxide with a high oxidation valence).

The above FIGS. 4A to 4C only take molybdenum as an example of the material of the metal-containing layer 120 for description. In the case of using other transition metals (vanadium, niobium, tantalum, tungsten, rhenium, chromium) as the metal-containing layer 120 , the above-mentioned X-ray photoelectron spectroscopy analysis can also be performed to know the various The compositional state of the metal oxide of the film.

FIG. 5 is a graph showing the variation of the threshold voltage (Vth shift) of the electronic device layer of the flexible device array substrate with the stress time (Stress time) according to an embodiment of the present invention, and the conventional use The curve diagram of the change of the threshold voltage of the electronic element layer of the flexible element array substrate of the flexible substrate as a function of the pressure time. In Fig. 5, the vertical axis is the change of the threshold voltage, and the horizontal axis is the pressure time (second, sec).

Referring to Figure 5, under the condition that the temperature is 60°C, the gate voltage V gate and the drain voltage V drain are both -20V, at 0 sec, 10 sec, 100 sec, 300 sec and 1000 sec, each measurement A "gate voltage versus drain current (Id-Vg) characteristic curve". It can be seen that in the flexible element array substrate of the embodiment of the present invention, the electronic element layer has a stable threshold voltage.

Compared with the embodiments of the present invention, in the conventional flexible element array substrate using a flexible substrate (eg, polyimide PI), the threshold voltage of the electronic element layer changes drastically with the pressure time, and has Unstable threshold voltage.

It can be seen from this that, in the flexible element array substrate of the embodiment of the present invention, the electrical performance of the active element (such as the thin film transistor TFT) of the electronic element layer after being subjected to the pressure test is better than that in the conventional flexible element layer. In the flexible element array substrate of the base (eg, polyimide PI), the electrical performance of the active element (eg, thin film transistor TFT) of the electronic element layer after being subjected to a pressure test.

6A to 6J are schematic flowcharts of steps of a manufacturing method of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 6A , first, a substrate 110 is provided. The substrate 110 may be a glass substrate, or a non-glass substrate with an oxide layer deposited thereon. As described above, the substrate 110 may provide oxygen atoms so that the metal of the subsequent metal-containing layer 120 can be oxidized with the oxygen atoms.

Referring to FIG. 6B , a metal-containing layer 120 is formed on the substrate 110 . The metal of the metal-containing layer 120 may be a transition metal having multiple oxidation states. In one embodiment, the metal of the metal-containing layer 120 may be selected from the group consisting of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof.

In one embodiment, the metal of the metal-containing layer 120 may be molybdenum oxide (MoO) with divalent molybdenum (Mo ²⁺ ); in another embodiment, the metal of the metal-containing layer 120 may also be molybdenum metal, With zero-valent molybdenum (Mo). That is, the metal-containing layer 120 may include a metal having a zero oxidation valence, or a combination of a metal having a zero oxidation valence and a metal oxide of a metal having a low oxidation valence.

Referring to FIG. 6C , a blocking layer 140 may be formed on the metal-containing layer 120 . The barrier layer 140 may be stacked using an inorganic layer of oxynitride. The barrier layer 140 can prevent the metal-containing layer 120 located below from having an electrical influence on other film layers formed above.

Referring to FIG. 6D , it can be noted that in this embodiment, a rapid thermal annealing process V is first performed before the step of forming the electronic device layer 130 shown in FIG. 6E . Through the rapid thermal annealing process V, hydrogen in each film layer can be removed, which is beneficial to improve the electronic properties of the electronic element layer 130 to be fabricated subsequently.

Referring to FIG. 6E , it can be noted that in this embodiment, the thermal process H is performed in the step of forming the electronic device layer 130 . The electronic element layer 130 can be, for example, an element layer of a Low Temperature Poly-Silicon (LTPS) thin film transistor. That is, the metal-containing layer 120 is heated at the same time using the heating step itself when the electronic element layer 130 is formed.

In this way, the metal-containing layer 120 can be oxidized with oxygen atoms from the substrate 110 to form the first layer 122 and the second layer 124 . The first layer 122 is located on the side close to the substrate 110 . The first layer contains the first metal oxide 122A to form the lift-off interface F in the first layer 122 . The second layer 124 is located on the side away from the substrate 110 . The second layer 124 contains the second metal oxide 124A. The oxidation number of the metal in the second metal oxide 124A is smaller than the oxidation number of the metal in the first metal oxide 122A. So far, the flexible device array substrate 101 as shown in FIG. 6E can be fabricated.

Likewise, the temperature range of thermal process H may be 350°C to 650°C. In another embodiment, the temperature range of the thermal process H may also be 500°C to 650°C. In the embodiments of FIGS. 6A to 6E , the implementation steps of the thermal process H can be saved, which further simplifies the manufacturing process of the flexible device array substrate 101 .

In addition, please refer to FIG. 6A to FIG. 6E and FIG. 6F to understand the manufacturing process of the flexible device array substrate 103 according to the embodiment of the present invention.

After the steps in FIGS. 6A to 6E , as shown in FIG. 6F , a display element layer 160 may also be formed on the electronic element layer 130 . The display element layer 160 may include: a first light emitting element 162, a second light emitting element 164 and a third light emitting element 166 which are arranged adjacent to each other. So far, the fabrication of the flexible element array substrate 103 is completed. The technical content of the display element layer 160 has been described in the relevant paragraphs of FIG. 3F above, and will not be repeated here.

In addition, please refer to FIGS. 3A to 3E and FIGS. 3F to 3G to understand the manufacturing process of the flexible device array substrate 104 according to the embodiment of the present invention.

After the steps in FIGS. 6A to 6F , as shown in FIG. 6G , an optical adhesive layer 170 and a cover lens layer 180 may be sequentially formed on the display element layer 160 . So far, the fabrication of the flexible element array substrate 104 is completed. The technical contents of the optical glue layer 170 and the cover lens layer 180 have been described in the relevant paragraphs of FIG. 3G above, and will not be repeated here.

Referring to FIG. 6H , after the fabrication of the flexible device array substrate 104 is completed, the peeling operation S may be further performed. Part of the first layer 122 and the substrate 110 are separated by peeling the interface F (as shown in FIG. 6G ). It should be noted that the peeling action S can also be performed after the fabrication of the flexible device array substrate 101 shown in FIG. 6E is completed; or, the peeling action S can also be performed after the flexible device array substrate shown in FIG. 6F is completed. After the production of 103 is carried out.

In addition, please refer to FIG. 6A to FIG. 6H and FIG. 6I to understand the manufacturing process of the flexible device array substrate 105 according to the embodiment of the present invention.

6A to FIG. 6H , please refer to FIG. 6I , a patterning process is further performed to leave the pattern of the second layer 124 at least in the bending area BA of the flexible device array substrate 105 . The patterning process may be a lithography step combined with an etching step. Setting the pattern (metal) of the second layer 124 in the bending area BA can enhance the bending toughness of the bending area BA of the flexible element array substrate 105 .

In addition, please refer to FIG. 6J to understand the manufacturing process of the flexible device array substrate 106 according to the embodiment of the present invention. As shown in FIG. 6H , a thickened pattern layer 190 may also be formed on the pattern of the second layer 124 . Here, the pattern of the second layer 124 can be used as an electroplating seed layer, and the thickening can be formed by local thickening of the metal layer in the area requiring structural protection or electromagnetic shielding protection by using the electroplating method. Pattern layer 190 . The thickness of the thickened pattern layer 190 is, for example, 1-1000 μm, and the commonly used thickness is less than 100 μm. For example, copper can be used as the electroplating metal to form the thickened pattern layer 190 of 40 μm copper.

7A to 7E are schematic diagrams of cross-sectional structures of metal-containing layers according to embodiments of the present invention. In the embodiments of FIGS. 7A to 7E , the substrate 110 , the electronic device layer 130 and the barrier layer 140 are shown together to facilitate understanding of the composition of the metal-containing layer 120 in the film structure.

Referring to FIGS. 7A to 7E , the total thickness of the metal-containing layer 120 may be 5 nm to 2000 nm, and a common thickness is 100 nm to 1000 nm.

In one embodiment, the metal-containing layer 120 may include a single-layer structure, that is, only a single film layer M1. The metal-containing layer 120 may be a metal layer of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, or chromium with a single film layer M1. In one embodiment, referring to FIG. 7A , the metal-containing layer 120 may be a metal layer of molybdenum (Mo) having a single film layer M1 .

Referring to FIGS. 7B to 7E , in one embodiment, the metal-containing layer 120 may include a multi-layer structure.

7B, the metal-containing layer 120 has two layers of film layers M1 and M2, wherein the film layer M1 in contact with the substrate 110 can be a metal layer of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, or chromium; and The other film layer M2 can be matched with different metals according to stress requirements, for example, a metal layer of aluminum can be used. Aluminum is a metal immiscible with molybdenum, and the difference in the coefficient of thermal expansion (CTE) between the molybdenum film layer M1 and the aluminum film layer M2 can be used to adjust the film structure of the metal-containing layer 120. internal stress.

Referring to FIG. 7C , the metal-containing layer 120 has three layers of film layers M1 , M2 , and M3 , wherein the metal material of M1/M2/M3 can be composed of a multi-layer structure of Mo/Al/Mo.

Referring to FIG. 7D , the metal-containing layer 120 has four film layers M1, M2, M3, and M4, wherein the metal material of M1/M2/M3/M4 can be formed as a multi-layer structure of Mo/Al/Mo/Al.

Referring to FIG. 7E, the metal-containing layer 120 has five layers of film layers M1, M2, M3, M4, and M5, wherein the metal material of M1/M2/M3/M4/M5 can be composed of Mo/Al/Mo/Al /Mo multilayer structure. In addition, regarding the metal of the film layer M5 , the thermal expansion coefficient can be selected to match the metal of the insulating layer 140 .

In addition, regarding the type of metal material, a metal that can be operated by wet etching or dry etching can be selected, which is beneficial to the subsequent patterning process. Metals suitable for wet etching are, for example, molybdenum, chromium, aluminium, niobium, neodymium. A suitable metal for dry etching is, for example, titanium.

Based on the above, using the metal-containing layer 120 having the multi-layer structure shown in FIGS. 7B to 7E can reduce the stress of the coating film, increase the thickness of the overall metal-containing layer 120, and suppress the foreign matter in the film layers M1-M5. of damage.

8A to 8B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. The metal-containing layer 120 (the first layer 122 ) of the flexible element array substrate 104 obtained after the peeling operation S in FIG. 3H or FIG. 6H can be further processed, and the flexible element array substrate 201 as shown in FIG. 8A can be obtained. , or the flexible element array substrate 202 shown in FIG. 8B .

In detail, please refer to FIG. 8A first. The flexible device array substrate 201 of this embodiment includes a display area AA and a bending area BA located on one side of the display area AA. The flexible element array substrate 201 includes: a first film layer 240 , a metal-containing layer 224 and an electronic element layer 230 . The metal-containing layer 224 is disposed on the first surface 242 of the first film layer 240, and the metal-containing layer 224 is located at least in the bending area BA. The electronic component layer 230 is disposed on the second surface 244 of the first film layer 240 , and the second surface 244 and the first surface 242 are opposite to each other.

Referring to FIG. 8A , the first film layer 240 may be a barrier layer, so that the metal-containing layer 224 and the electronic device layer 230 are not electrically connected. The metal-containing layer 224 can be used to improve the toughness and flexibility of the flexible device array substrate 201 .

In this embodiment, the flexible element array substrate 201 may further include: a display element layer 260 disposed on the electronic element layer 230 . The display element layer 260 includes a first light emitting element 262, a second light emitting element 264 and a third light emitting element 266 which are arranged adjacent to each other. The first light emitting element 262 may be a red light emitting diode, the second light emitting element 264 may be a green light emitting diode, and the third light emitting element 266 may be a blue light emitting diode. In addition, the first light emitting element 262 , the second light emitting element 264 and the third light emitting element 266 can be encapsulated by a thin film encapsulation (TFE), so that the display element layer 260 has a bendable property.

In addition, in this embodiment, the flexible element array substrate 201 may further include: an optical adhesive layer 270 disposed on the display element layer 260 ; and a cover lens layer 280 disposed on the optical adhesive layer 270 . Using the optical adhesive layer 270 and the cover lens layer 280 can further improve the optical properties of the display element layer 260 and optimize the display effect of the display element layer 260 .

Referring to FIG. 8A , the metal-containing layer 224 may include a first portion 224A and a second portion 224B connected to each other. The first portion 224A is disposed in the display area AA. The second portion 224B is disposed in the bending area BA.

In addition, referring to FIG. 8B , in the flexible device array substrate 202 of this embodiment, the metal-containing layer 224 may include a first portion 224A and a second portion 224B that are separated from each other. The first portion 224A is disposed in the display area AA. The second portion 224B is disposed in the bending area BA. In this embodiment, the metal-containing layer 224 is segmented, so that the second portion 224B can function as a fan-out wiring.

9A-9B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 9A , the flexible device array substrate 201A of this embodiment is based on the flexible device array substrate 201 of FIG. 8A , and further includes: a thickened pattern layer 290 disposed on the metal-containing layer 224 .

Referring to FIG. 9B , the flexible device array substrate 202A of this embodiment is on the base 202 of the flexible device array substrate of FIG. 8B , and further includes: a thickened pattern layer 290 disposed on the first portion 224A of the metal-containing layer 224 .

In the embodiment of FIGS. 9A and 9B , the pattern of the metal-containing layer 224 may be used as an electroplating seed layer. In addition, the thickened pattern layer 290 is formed by locally thickening the metal layer in the region requiring structural protection or electromagnetic shielding protection by the electroplating method. The thickness of the thickened pattern layer 290 is, for example, 1-1000 μm, and the commonly used thickness is less than 100 μm. For example, copper can be used as the electroplating metal to form the thickened pattern layer 290 of 40 μm copper.

10A to 10C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 10A , in the flexible device array substrate 203 of this embodiment, the first film layer 240 includes a bending portion 240A. The metal-containing layer 224 is disposed on the bent portion 240A. A thickened pattern layer 290 may also be further disposed on the metal-containing layer 224 located at the bent portion 240A. The flexible device array substrate 203 in FIG. 10A is shown in an unbent state.

_10B and FIG. 10C , it can be seen that the bending direction of the bending portion 242 is opposite to the light emitting directions _LR , _LG and LB of the first light emitting element 262 , the second light emitting element 264 and the third light emitting element 266 .

Referring to FIG. 10B , in the flexible element array substrate 204 of this embodiment, the light-emitting directions _LR , _LG , and LB of the first light-emitting element 262, the second light-emitting element 264 and the third light-emitting element 266 are toward FIG. _10B Below, the bent portion 240A is bent upward in FIG. 10B .

Referring to FIG. 10C , in the flexible element array substrate 205 of this embodiment, the light-emitting directions _LR , _LG , and LB of the first light-emitting element 262, the second light-emitting element 264 and the third light _- emitting element 266 are directed toward FIG. 10C Above, and the bent portion 240A is bent downward in FIG. 10C .

Please refer to FIGS. 10B and 10C again, after the bending, a thickened pattern layer 290 is further disposed on the metal-containing layer 224 of the bending portion 240A to serve as a protection structure or electromagnetic shielding at the position of the bending portion 240A structure. After the first film layer 240 is bent, the pattern layer 290 is thickened by electroplating, so that the neutral axis of the first film layer 240 is not changed, which is beneficial to the stability of the overall structure.

11 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 11 , in the flexible device array substrate 206 of this embodiment, the pattern of the metal-containing layer 224 is set corresponding to the interval D between the first light-emitting element 262 , the second light-emitting element 264 and the third light-emitting element 266 . In this way, in the flexible element array substrate 206, the light transmittance of the light emitted by the first light emitting element 262, the second light emitting element 264 and the third light emitting element 266 can be improved, and the strength of the overall structure can be improved.

12A is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12B is a schematic bottom view of the flexible element array substrate of FIG. 12A . Referring to FIG. 12A , the flexible device array substrate 207 of this embodiment is based on the flexible device array substrate 206 of FIG. 11 , and further includes: a thickened pattern layer 290 disposed on the pattern of the metal-containing layer 224 .

Likewise, in the embodiments of FIGS. 12A and 12B , the pattern of the metal-containing layer 224 may be used as an electroplating seed layer. In addition, the thickened pattern layer 290 is formed by locally thickening the metal layer in the region requiring structural protection or electromagnetic shielding protection by the electroplating method. The thickness of the thickened pattern layer 290 is, for example, 1-1000 μm, and the commonly used thickness is less than 100 μm. For example, copper can be used as the electroplating metal to form the thickened pattern layer 290 of 40 μm copper.

13 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. Referring to FIG. 13 , the flexible device array substrate 208 of this embodiment except the first film layer 252 , the metal-containing layer 224 , the electronic device layer (not shown), the display device layer 260 (containing the first light-emitting device 262 , the second light-emitting device In addition to the element 264 and the third light-emitting element 266), the optical glue layer 270 and the cover lens layer 280, it also includes: the second film layer 254, which carries the display element layer 260; the color filter pattern layer 300, which corresponds to the display element layer 260 Whereas, the color filter pattern layer 300 includes: a first filter pattern 310, a second filter pattern 320 and a third filter pattern 330 arranged adjacent to each other; and a thickening pattern layer 290 arranged on the first film On the metal-containing layer 224 of the bent portion 252A of the layer 252; wherein, the color filter pattern layer 300 is located between the first film layer 252 and the second film layer 254, and the first film layer 252 and the second film layer 254 are Flexible substrate.

The flexible element array substrate 208 of this embodiment may have a double-layered flexible substrate, and the flexible substrate may use a polyimide (PI) substrate. In addition, the metal-containing layer 224 is provided on the bent portion 252A, and the metal-containing layer 224 is used as a plating seed layer to form the thickening pattern layer 290 .

To sum up, in the flexible device array substrate and the manufacturing method of the flexible device array substrate of the present invention, a film layer of a metal oxide layer with a high oxidation number is formed between the substrate and the metal containing the metal layer through a thermal process. . In this film layer, a peeling interface is formed due to the weak cohesion of the metal oxide. Through this peel interface, a portion of the first layer can be easily separated from the substrate, while the second metal-containing layer and the electronic component layer above it can be easily removed together. In this way, the fabrication yield of the flexible element array substrate can be improved, and a flexible element array substrate with good toughness can be obtained.

Furthermore, the flexible element array substrate and the manufacturing method of the flexible element array substrate of the present invention can further process the metal-containing layer after the peeling action (for example, a patterning process, a thickening process, etc.), and further, the flexibility can be improved. Light penetration strength, protection, toughness and flexibility of element array substrates. In addition, local thickening of the metal layer can be performed for areas requiring structural protection or electromagnetic shielding protection.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the scope of the appended patent application.

100, 101, 102, 103, 104: flexible element array substrate 105, 106: flexible element array substrate 110: substrate 120: metal-containing layer 122: first layer 122A: first metal oxide 124: second layer 124A: first layer Two metal oxides 130: electronic element layer 140: barrier layer 150: flexible layer 160: display element layer 162: first light-emitting element 164: second light-emitting element 166: third light-emitting element 170: optical glue layer 180: cover lens layer 190: thickened pattern layer 201, 201A, 202, 202A: flexible element array substrate 203, 204, 205, 206, 207, 208: flexible element array substrate 224: metal-containing layer 224A: first portion of metal-containing layer 224B: containing The second part 230 of the metal layer: the electronic element layer 240, 252: the first film layer 240A, 252A: the bending part 242: the first side 244: the second side 254: the second film layer 260: the display element layer 262: the first A light-emitting element 264: the second light-emitting element 266: the third light-emitting element 270: the optical glue layer 280: the cover lens layer 290: the thickening pattern layer 300: the color filter pattern layer 310: the first filter pattern 320: the second filter Light pattern 330: Third filter pattern AA: Display area BA: Bending area D: Interval F: Peeling interface H: Thermal process _LR , _LG , _LB : Light exit direction M1 , M2 , M3 , M4 , M5 : Film S: peeling action V: rapid thermal annealing process

1A to 1C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. FIG. 2 is a schematic diagram of peeling off the flexible element array substrate of FIG. 1A . 3A to 3H are schematic flowcharts of steps of a method for fabricating a flexible device array substrate according to an embodiment of the present invention. 4A is an X-ray Photoelectron Spectroscopy (X-ray Photoelectron Spectroscopy) of the surface of the naturally oxidized molybdenum metal when the metal of the metal-containing layer is molybdenum. 4B is an X-ray photoelectron spectrogram of the first layer of a part of the metal-containing layer located above the exfoliation interface when the metal of the metal-containing layer is molybdenum. 4C is an X-ray photoelectron spectrum diagram of the first layer of a part of the metal-containing layer located below the peeling interface when the metal of the metal-containing layer is molybdenum. FIG. 5 is a graph showing the variation of the threshold voltage (Vth shift) of the electronic device layer of the flexible device array substrate with the stress time (Stress time) according to an embodiment of the present invention, and the conventional use The curve diagram of the change of the threshold voltage of the electronic element layer of the flexible element array substrate of the flexible substrate as a function of the pressure time. 6A to 6J are schematic flowcharts of steps of a manufacturing method of a flexible device array substrate according to an embodiment of the present invention. 7A to 7E are schematic diagrams of cross-sectional structures of metal-containing layers according to embodiments of the present invention. 8A to 8B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 9A to 9B are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 10A to 10C are schematic cross-sectional views of a flexible device array substrate according to an embodiment of the present invention. 11 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. 12A is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention. FIG. 12B is a schematic bottom view of the flexible element array substrate of FIG. 12A . 13 is a schematic cross-sectional view of a flexible device array substrate according to an embodiment of the present invention.

100: Flexible element array substrate

110: Substrate

120: metal layer

122: first floor

122A: first metal oxide

124: second floor

124A: Second metal oxide

130: Electronic component layer

F: Stripping interface

Claims (10)

A flexible element array substrate, comprising: a substrate; A metal-containing layer disposed on the substrate, the metal-containing layer comprising: a first layer, located on a side close to the substrate, and having a peeling interface in the first layer; and a second layer, located on the side away from the substrate, wherein the first layer contains a low oxidation number metal oxide and a high oxidation number metal oxide, the second layer contains the low oxidation number metal oxide metal oxides; and An electronic component layer is disposed above the metal-containing layer. The flexible element array substrate according to claim 1, wherein, The metal of the metal-containing layer is selected from the group consisting of molybdenum, vanadium, niobium, tantalum, tungsten, rhenium, chromium, and combinations thereof. The flexible element array substrate according to claim 2, wherein, The metal of the metal-containing layer is molybdenum. The flexible element array substrate according to claim 1, wherein, The second layer contains a metal with zero oxidation valence. The flexible element array substrate according to claim 1, further comprising: A blocking layer is disposed between the metal-containing layer and the electronic element layer. The flexible element array substrate according to claim 1, further comprising: a display element layer disposed on the electronic element layer, The display element layer includes: a first light-emitting element, a second light-emitting element and a third light-emitting element arranged adjacent to each other. The flexible element array substrate according to claim 6, further comprising: an optical adhesive layer disposed on the display element layer; and A cover lens layer is arranged on the optical adhesive layer. A manufacturing method of a flexible element array substrate, comprising: providing a substrate; forming a metal-containing layer on the substrate; A thermal process is provided so that the metal-containing layer forms a first layer and a second layer, and a lift-off interface is formed in the first layer, wherein the first layer is located on a side close to the substrate, and the first layer is One layer contains a metal oxide with a low oxidation number and a metal oxide with a high oxidation number, the second layer is located on a side away from the substrate, and the second layer contains the metal oxide with a low oxidation number; forming an electronic device layer over the metal-containing layer; and A peeling action is performed to separate a part of the first layer and the substrate through the peeling interface. The manufacturing method of the flexible element array substrate according to claim 8, further comprising: A barrier layer is formed between the metal-containing layer and the electronic device layer. The method for manufacturing a flexible element array substrate according to claim 8, wherein, The temperature range for this thermal process is 350°C to 650°C.

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