JP4920266B2 - Method for manufacturing substrate having laminated structure - Google Patents

Description

  The present invention relates to a substrate having a laminated structure in which at least a metal film and a protective film are formed, and more particularly to a technique for performing wet etching of a metal film and a protective film collectively.

  In recent years, image quality of flat panel displays (FPD) has been improved, and low reflectivity metals such as aluminum (Al), chromium (Cr), and molybdenum (Mo) cannot satisfy optical performance. Silver (Ag) is excellent in optical characteristics and electrical characteristics as compared with these, and is widely used in FPD reflection films, electrodes, and semiconductor wiring. At this time, in order to improve corrosion resistance such as oxidation resistance, heat resistance, and curing resistance of silver, a silver alloy may be laminated on the substrate as a silver layer. Furthermore, in order to protect the silver layer, a protective film having a thickness of 100 mm or more may be laminated on the surface of the silver layer.

  When the silver layer and the protective film are etched to form a pattern in the silver layer, the silver layer and the protective film must be wet etched twice using different etching solutions (hereinafter referred to as “twice etching”). .) In this case, two wet etching steps and two types of etching solutions are required, which causes an increase in cost required for etching. Further, in the protective film etching step, the protective film etching solution may pass through the protective film and ooze out to the silver layer, and even part of the silver layer may be etched. This may damage the silver layer or cause side etching in the silver layer. Damage to the silver layer and side etching lead to poor shape of the silver layer, optical identification of the silver layer, and deterioration of electrical characteristics.

  By the way, a technique is disclosed in which an adhesion layer and a barrier layer are provided so as to sandwich a silver layer, and the adhesion layer, the silver layer, and the barrier layer are collectively dry-etched (see, for example, Patent Document 1 or 2). .

  In addition, an etching composition for wet etching a metal film and a transparent conductive film in a lump is disclosed (for example, see Patent Document 3).

JP 2004-355918 A JP 2005-011793 A JP 2004-156070 A

  In the dry etching method including Patent Document 1 or 2, side etching of the silver layer is difficult to occur. However, in the dry etching method, only one wafer on which a substrate or a plurality of substrates are formed can be etched, so that productivity is low, which causes an increase in cost required for etching.

  In the method of collectively performing wet etching including Patent Document 3, the thickness of the transparent conductive film is as thick as 200 to 500 mm and requires long-time etching. In addition, according to the inventor's additional test, the etching time is long, so that the metal film may be damaged or side etching may occur on the metal film for the same reason as described above. In addition, an etching temperature condition capable of increasing the etching rate in order to avoid a decrease in productivity due to long-time etching is disclosed. However, if the etching rate is increased, it becomes difficult to control the etching, and the metal film may be damaged or side etching may occur in the metal film. Therefore, it was difficult to perform high-quality etching.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate having a laminated structure and a method for manufacturing the same in a high quality wet etching process using a same etching solution for a metal film made of silver or a silver alloy containing silver as a main component and a protective film. It is possible to do. At this time, an object is to improve the optical characteristics and electrical characteristics of the metal film by reducing damage to the metal film in the masking portion and reducing side etching of the metal film. Furthermore, it aims at reducing the number of etching liquids and the number of etching processes compared with the conventional twice etching. Another object of the present invention is to improve productivity by performing wet etching on a plurality of substrates and wafers collectively as compared with dry etching.

As a result of intensive development, the present inventors have found that the above problem can be solved by making the protective film extremely thin in a substrate having a laminated structure in which a metal film and a protective film are formed, and the present invention has been completed .

Method of producing a substrate having a laminated structure according to the present invention, the surface of the substrate, in the manufacturing method of a substrate having a laminated structure formed of at least a metal film and the protective film in this order, as the metal film, silver or silver A metal film forming step for forming a film made of a silver alloy containing as a main component, and protection for forming a film made of a transparent oxide conductor or vanadium having a thickness of 8 mm to 32 mm as the protective film A film forming process, and an etching process in which the metal film and the protective film are collectively wet-etched with the same etching solution to form an exposed surface , and in the etching process, the metal film and the protection The average speed for wet etching of the film at a time is not less than 5 liters / second and not more than 300 liters / second, and is necessary for collectively performing the wet etching of the metal film and the protective film. Time is equal to or is within 300 seconds. By ending the wet etching collectively in a short time, damage and side etching of the metal film can be further reduced, and the optical characteristics and electrical characteristics of the metal film can be improved.

The manufacturing method of the board | substrate which has a laminated structure which concerns on this invention contains that the said board | substrate is a glass substrate, a metal substrate, a semiconductor substrate, a ceramic substrate, or a plastic substrate.

  The present invention relates to a substrate having a laminated structure and a method for manufacturing the same, wherein a metal film made of silver or a silver alloy containing silver as a main component and a protective film are collectively wet-etched with the same etching solution with high quality. Can do. At this time, the optical characteristics and electrical characteristics of the metal film can be improved by reducing damage to the metal film in the masking portion and reducing side etching of the metal film. Furthermore, the number of etching solutions and the number of etching processes can be reduced as compared with the conventional double etching. Further, as compared with dry etching, a plurality of substrates and wafers can be collectively wet etched to improve productivity.

  Hereinafter, the present invention will be described in detail with reference to embodiments, but the present invention is not construed as being limited to these descriptions. In addition, the same code | symbol was attached | subjected to the same member and the same site | part.

  The board | substrate which has the laminated structure which concerns on this embodiment is demonstrated. FIG. 1 shows a partial vertical cross-sectional schematic view of a substrate having a laminated structure according to this embodiment. The substrate 10 having the laminated structure according to the present embodiment includes a laminated structure 30 in which at least a metal film 31 and a protective film 32 are formed in this order on the surface of the substrate 20, and the metal film 31 is made of silver or silver. The protective film 32 has a thickness of 8 mm or more and 32 mm or less, and the metal film 31 and the protective film 32 can be wet etched together with the same etching solution.

  Here, the substrate 20 includes a glass substrate, a semiconductor substrate, a metal substrate, a ceramic substrate, or a plastic substrate. For example, if the substrate 20 is a glass substrate, the substrate 10 having a laminated structure can be used as an FPD transmissive substrate, a transflective substrate, or a reflective substrate. Further, if the substrate 20 is a metal substrate such as copper, a semiconductor substrate such as silicon, a ceramic substrate such as alumina, or a plastic substrate such as polycarbonate, polyethylene terephthalate, or polyethylene naphthalate, the substrate 10 having a laminated structure is reflected on the FPD. It can be used as a mold substrate. When a plastic substrate is used, the substrate 10 having a laminated structure can be made flexible and lightweight. Further, regardless of the material of the substrate 20, etching resistance to an etching solution (hereinafter referred to as “etching solution”) used when the metal film 31 and the protective film 32 are collectively wet-etched. It is preferable to have properties. Further, the thickness of the substrate 20 is not particularly limited. For example, the thickness of the substrate 20 may be 0.5 mm to 3 mm.

  The metal film 31 is made of silver or a silver alloy containing silver as a main component. Examples of silver alloys include Ag-Pd-Cu alloys (hereinafter referred to as APC alloys), Ag-Pd-Cu-Ge alloys, Ag-Cu-Au alloys, Ag-Ru-Cu alloys, Ag-Ru-Au alloys. , Ag—Pd alloy, Ag—Nd alloy, Ag—Mg alloy, Ag—Ca alloy and Ag—Na alloy can be exemplified. In the present embodiment, the metal film 31 is an APC alloy. For example, the metal film 31 may be a reflective film because it has a high reflectance of silver. Further, the metal film 31 may be an electrode or a wiring. In addition, the thickness of the metal film 31 is not particularly limited, but it is preferably a thickness that allows wet etching together with the protective film 32. For example, the thickness of the metal film 31 may be 500 to 2000 mm.

  The protective film 32 protects the metal film 31. In the manufacturing process, the substrate 10 having a laminated structure may be irradiated with ultraviolet rays. At this time, if the metal film 31 is directly irradiated with ultraviolet rays, the metal film 31 is damaged, and optical characteristics such as high reflectivity and electrical characteristics of silver are impaired. Therefore, the protective film 32 reduces damage to the metal film 31 due to ultraviolet rays.

  FIG. 2 shows a schematic diagram when the metal film and the protective film are collectively wet etched. 2A is a partial vertical cross-sectional schematic view of a substrate having a laminated structure according to the present embodiment, and FIG. 2B is a partial vertical cross-sectional schematic view of a substrate having a conventional protective film. is there. As shown in FIG. 2B, if the thickness of the protective film 32 exceeds 32 mm, it takes a long time to wet-etch the metal film 31 and the protective film 32, and the wet etching may not be performed collectively. For example, the thickness of the protective film 32 in FIG. 2B is 100 mm. As a result, a part of the metal film 31 is etched, the metal film 31 may be damaged, and side etching 31a may be generated in the metal film 31. For this reason, the etching side surface 31 b is not perpendicular or substantially perpendicular to the substrate 20. Further, if the thickness of the protective film 32 is less than 8 mm, the protective film 32 is too thin to perform the function of protecting the metal film 31.

However, in the substrate 10 having a laminated structure, the thickness of the protective film 32 is made extremely thin, such as 8 mm or more and 32 mm or less, so that the metal film 31 and the protective film 32 are formed before the etching solution oozes out along the protective film 32. The collective wet etching is completed. Thereby, damage to the metal film 31 in the masking portion can be reduced, side etching of the metal film 31 can be reduced, and wet etching can be performed with high quality. For example, as illustrated in FIG. 2A, the substrate 10 having a stacked structure has few side etchings 31 a and can form an etching side surface 31 b that is perpendicular or substantially perpendicular to the substrate 20. At this time, by reducing damage to the metal film 31 and reducing the side etching 31a of the metal film 31, the optical characteristics and electrical characteristics of the metal film 31 can be improved. Furthermore, the number of etching solutions and the number of etching processes can be reduced as compared with the conventional double etching. Further, as compared with dry etching, a plurality of substrates and wafers can be collectively wet etched to improve productivity.

  In the present invention, the etching solution can be exemplified by a solution containing phosphoric acid, nitric acid and acetic acid. For example, the etching solution may be a mixture of 63% by mass phosphoric acid, 2% by mass nitric acid, and 33% by mass acetic acid.

  In the substrate having the laminated structure according to the present embodiment, the protective film 32 has an average rate of wet etching of the metal film 31 and the protective film 32 collectively at 5 liters / second or more. It is preferable that the time required for performing the wet etching in a lump is made of a material within 300 seconds. In determining the time required for wet etching in a lump, for example, the standard film thickness of the metal film 31 may be 1500 mm. Of course, the present invention is not limited to this standard film thickness. As described above, the longer the wet etching time is, the more the metal film 31 is damaged and the side etching 31a may be generated in the metal film 31. By completing the wet etching collectively in a short time, damage and side etching of the metal film 31 can be further reduced, and the optical characteristics and electrical characteristics of the metal film 31 can be improved.

  Furthermore, the average speed at which the metal film 31 and the protective film 32 are collectively wet etched is preferably 300 好 ま し く / second or less, and more preferably 200 Å / second or less. When the average rate of wet etching at once exceeds 300 Å / sec, it becomes difficult to control etching. Further, if the average wet etching rate is less than 5 mm / second, the etching takes a long time, and the wet etching may not be performed collectively. Here, the average wet etching rate is the total thickness of the metal film 31 and the protective film 32 divided by the time from the start of wet etching of the protective film 32 to the end of wet etching of the metal film 31. Value.

  Here, the protective film 32 includes being made of a transparent oxide conductor. If the protective film 32 is a transparent oxide conductor, the protective film 32 can be an electrode or a wiring. Transparent oxide conductors include indium oxide transparent conductors such as ITO compounds and IZO compounds, tin oxide transparent conductors such as ATO compounds and FTO compounds, and zinc oxide transparent conductors such as AZO compounds and GZO compounds. It can be illustrated. In the present embodiment, the protective film 32 is made of an ITO compound.

  The laminated structure 30 shown in FIG. 1 or FIG. 2 shows the case where only the metal film 31 and the protective film 32 are formed. If the metal film 31 and the protective film 32 are formed in this order from the substrate 20 side, an adhesion film (not shown) other than the metal film 31 and the protective film 32 may be formed. Depending on the use of the substrate 10 having a laminated structure, the adhesion film may be a transparent oxide conductor film, a low reflectance metal film, a ceramic film, or a plastic film. Further, the adhesion film may be formed anywhere between the substrate 20 and the metal film 31, between the metal film 31 and the protective film 32, and on the surface of the protective film 32.

  The adhesion film may be wet etched together with the metal film 31 and the protective film 32. The thickness of the adhesion film is not particularly limited, but is preferably a thickness that allows wet etching together with the metal film 31 and the protective film 32. At this time, it is preferable that the adhesion film can be etched with an etchant. If the adhesion film can also be wet etched at once, damage to the metal film 31 and side etching can be reduced. When the adhesion film is formed between the substrate 20 and the metal film 31, the adhesion film may not be wet etched as long as the metal film 31 can be wet etched. At this time, the thickness of the adhesion film is not particularly limited, and preferably has etching resistance to the etching solution. Furthermore, it is good also as the laminated structure 30 which forms two or more types of adhesion films, and has four or more types of films including the metal film 31 and the protective film 32. Hereinafter, the adhesion film will be specifically described.

  FIG. 3 shows a partial vertical cross-sectional schematic diagram of the second form of the laminated structure according to the present embodiment. Only differences from the substrate 10 having the laminated structure of FIG. 1 will be described. In FIG. 3, an adhesion film 33 a is formed between the substrate 20 and the metal film 31. If the adhesion film 33a is also wet-etched collectively, the adhesion film 33a may be a transparent oxide conductor film or a low reflectance metal film. At this time, the total thickness of the metal film 31 and the adhesion film 33a may be 500 to 2000 mm. If the adhesion film 33a is a transparent oxide conductor film, the metal film 31 is difficult to peel off from the substrate 10 having a laminated structure, and the substrate 10 having the laminated structure is used as a transmissive substrate or a semi-transmissive substrate of an FPD. Can be used. Further, if the adhesion film 33a is a transparent oxide conductor film or a low reflectance metal film, the adhesion film 33a can be an electrode or a wiring. Alternatively, if the adhesion film 33a is not wet etched, the adhesion film 33a may be a ceramic film. At this time, the thickness of the adhesion film 33a may exceed 2000 mm. If the adhesion film 33a is ceramic, the adhesion film 33a can also be an insulating film.

  FIG. 4 shows a partial longitudinal cross-sectional schematic diagram of the third embodiment of the multilayer structure according to this embodiment. Only differences from the substrate 10 having the laminated structure of FIG. 1 will be described. In FIG. 4, an adhesion film 33 b is formed between the metal film 31 and the protective film 32. If the adhesion film 33b is also subjected to wet etching in a lump, the adhesion film 33b may be a transparent oxide conductor film or a low reflectance metal film. At this time, the total thickness of the metal film 31 and the adhesion film 33b may be 500 to 2000 mm. If the adhesion film 33b is a transparent oxide conductor film, the metal layer 31 can be protected by the protective film 32 and the adhesion film 33b, and the substrate 10 having a laminated structure is used as an FPD transmissive substrate or a semi-transmissive substrate. Can do. Here, the total thickness of the protective film 32 and the adhesion film 33b is preferably 8 mm or more and 32 mm or less. Further, if the adhesion film 33b is a transparent oxide conductor film or a low reflectance metal film, the adhesion film 33b can be an electrode or a wiring.

  FIG. 5 shows a partial vertical cross-sectional schematic view of the fourth embodiment of the multilayer structure according to this embodiment. Only differences from the substrate 10 having the laminated structure of FIG. 1 will be described. In FIG. 5, a second protective film 34 is formed on the surface of the protective film 32. The second protective film 34 may be a transparent oxide conductor film or a low reflectance metal film. At this time, the total thickness of the protective film 32 and the second protective film 34 is preferably 8 mm or more and 32 mm or less.

  A method for manufacturing a substrate having a laminated structure according to this embodiment will be described. FIG. 6 shows a process conceptual diagram of a method for manufacturing a substrate having a laminated structure according to this embodiment. In the method for manufacturing a substrate having a laminated structure according to the present embodiment, silver or silver is used in the method for manufacturing a substrate having a laminated structure in which at least a metal film 31 and a protective film 32 are formed in this order on the surface of the substrate 20. A metal film forming step S1 for forming a metal film 31 made of a silver alloy as a main component, and a protective film 32 having a thickness of 8 mm to 32 mm and capable of being wet etched together with the metal film 31 by the same etching solution. And a protective film forming step S2 for forming a film. Further, after the protective film forming step S2, a resist forming step S3 for forming the photoresist 50 on the surface of the laminated structure 30, an exposure step S4 for transferring the pattern to the photoresist 50, and the photoresist 50 to which the pattern is transferred are applied. A developing step S5 for developing, an etching step S6 for wet etching the metal film 31 and the protective film 32 in a lump, and a resist removing step S7 for removing the photoresist 50 may be provided.

  First, in the metal film forming step S1, the metal film 31 is formed. Examples of the method for forming the metal film 31 include a sputtering method, a vacuum deposition method, a CVD method, an ion plating method, and a plating method. In the present embodiment, the metal film 31 is formed by sputtering. An appropriate reaction gas is filled around the sputtering target and the substrate 20 made of silver or a silver alloy containing silver as a main component. After that, when plasma is generated and ions in the plasma collide with the sputtering target, the sputtered particles are stacked on the substrate 20, and the metal film 31 can be formed.

  Next, the protective film 32 is formed in the protective film forming step S2. Examples of the method for forming the protective film 32 include a sputtering method, a vacuum deposition method, a CVD method, an ion plating method, and a coating method. In the present embodiment, the protective film 32 is formed by sputtering. Here, before the metal film forming step S1, between the metal film forming step S1 and the protective film forming step S2, or after the protective film forming step S2, an adhesion film (not shown) or a second protective film (not shown). A step of forming a film may be provided.

  Next, in the resist formation step S <b> 3, a photoresist 50 is formed on the surface of the laminated structure 30. A photosensitive agent that becomes the photoresist 50 may be applied to the surface of the laminated structure 30.

  Next, in the exposure step S <b> 4, the photoresist 50 is exposed to transfer a pattern such as an electrode or a wiring to the photoresist 50. On the photomask 52, patterns such as electrodes and wiring are drawn in advance. When light 51 is irradiated onto the photoresist 50 through the photomask 52, a light irradiated portion 53 is formed on the photoresist 50 according to the pattern shape. As a result, patterns such as electrodes and wiring can be transferred to the photoresist 50.

  Next, in the developing step S <b> 5, the photoresist 50 to which the pattern has been transferred is developed, and the light irradiated portion 53 is removed from the photoresist 50. For example, chemicals may be applied to the photoresist 50 and the light irradiated portion 53 may be removed.

  The method for manufacturing a substrate having a laminated structure according to this embodiment may further include an etching step S6 in which the metal film 31 and the protective film 32 are collectively wet-etched with the same etching solution to form an exposed surface. preferable. Since the thickness of the protective film 32 is as extremely thin as 8 to 32 mm, the time required for the etching step S6 is shortened. For this reason, even if wet etching is performed collectively, the shape defect of the metal film 31 is small, the optical characteristics and electrical characteristics of the metal film 31 can be improved, and a pattern can be formed on the metal film 31.

  Next, in the resist removing step S7, the photoresist 50 is removed. Through the above steps, the substrate having the laminated structure can be patterned.

Example 1
A substrate having the laminated structure shown in FIG. 1 was used. Separately, the substrate having the laminated structure was annealed, and the substrate having the laminated structure was etched by the method shown in FIG. As the substrate, non-alkali glass (20 mm × 40 mm) was used. The metal film was formed by sputtering using an APC target (composition 98Ag-1Pd-1Cu) under the conditions of power of 200 W and pressure of 0.1 Pa. At this time, the metal film was an APC film having a thickness of 1500 mm and substantially the same composition as the APC target. The protective film was formed by sputtering using an ITO target under the conditions of power of 100 W and pressure of 0.1 Pa. At this time, the protective film was an ITO film having a thickness of 10 mm and substantially the same composition as the ITO target. Photoresist was applied to 50% of the surface of the protective film, and the metal film and the protective film were collectively wet etched. At this time, SEA-1 manufactured by Kanto Chemical Co., Ltd. was used as an etching solution.

  Table 1 shows the conditions for forming the protective film, the etching results, and the reflectance. Whether the metal film is etched or not is observed with an electron microscope. At this time, when the etching was completed without causing side etching in the metal film, it was marked as ◯, and when the side etching occurred in the metal film or when the etching of the protective film was not finished, it was marked as x. The etching time is the time required to wet-etch the metal film and the protective film at once. The etching rate is a value obtained by dividing the thickness of the metal film and the protective film by the etching time. The reflectance before annealing is the reflectance before annealing a substrate having a laminated structure that has not been wet etched. The reflectance after annealing is the reflectance after annealing a substrate having a laminated structure that has not been wet etched. Here, the annealing treatment was performed under the conditions that the atmosphere gas was air and the temperature was 250 ° C. and 1 hour.

(Example 2)
An IZO protective film was formed under the film forming conditions shown in Table 1 using an IZO target as a target for the protective film. The protective film had a thickness of 10 mm. Similar to Example 1, wet etching and annealing were performed collectively, and the results are shown in Table 1.

(Example 3)
An IZO protective film was formed under the film forming conditions shown in Table 1 using an IZO target as a target for the protective film. The protective film had a thickness of 30 mm. Similar to Example 1, wet etching and annealing were performed collectively, and the results are shown in Table 1.

Example 4
Using a vanadium target as the target of the protective film, a vanadium protective film was formed under the film forming conditions shown in Table 1. The protective film had a thickness of 10 mm. Similar to Example 1, wet etching and annealing were performed collectively, and the results are shown in Table 1.

(Comparative Example 1)
Only the metal film of APC alloy was formed on the substrate, and the metal film was wet etched using the same etching solution as in Example 1. The results are shown in Table 1.

(Comparative Example 2)
An ITO protective film was formed under the film forming conditions shown in Table 1, using an ITO target as the target of the protective film. The protective film had a thickness of 50 mm. The wet etching was collectively performed in the same manner as in Example 1, and the results are shown in Table 1.

(Comparative Example 3)
Using a tin target as the target of the protective film, a protective film of tin was formed under the film forming conditions shown in Table 1. The protective film had a thickness of 10 mm. The wet etching was collectively performed in the same manner as in Example 1, and the results are shown in Table 1.

(Comparative Example 4)
Using an aluminum target as the target for the protective film, an aluminum protective film was formed under the deposition conditions shown in Table 1. The protective film had a thickness of 30 mm. The wet etching was collectively performed in the same manner as in Example 1, and the results are shown in Table 1.

(Comparative Example 5)
Using an aluminum target as the target for the protective film, an aluminum protective film was formed under the deposition conditions shown in Table 1. The protective film had a thickness of 10 mm. The wet etching was collectively performed in the same manner as in Example 1, and the results are shown in Table 1.

  Table 1 shows the following. In Examples 1 to 4, the protective film did not remain, and batch wet etching was possible. Furthermore, as a result of visual observation with an electron microscope, side etching did not occur in the metal film. When Comparative Example 1 and Examples 1 to 4 were compared, it was found that all of Examples 1 to 4 were slower in etching rate than Comparative Example 1. In Comparative Example 2, the collective wet etching of the protective film was not completed even after 300 seconds had elapsed. Comparing Comparative Example 2 and Example 1, it was found that even when the protective film was an ITO compound, the collective wet etching would not be completed unless the protective film was made extremely thin. In Comparative Example 3, the collective wet etching of the protective film was not completed even after 300 seconds had elapsed. It was found that when the protective film is tin, the collective wet etching does not end even if the protective film is as thin as 10 mm. In Comparative Example 4, the collective wet etching of the protective film was not completed even after 360 seconds. In Comparative Example 5, side etching occurred in the metal film. It was found that when the protective film is aluminum, if the protective film is thick, collective wet etching cannot be performed, and even if the protective film is thin, side etching occurs, and in any case, etching cannot be performed with good quality.

  As a result, it was found that the protective film had a thickness of 8 mm or more and 32 mm or less, and the material may be an ITO compound or an IZO compound. It was also found that the protective film material may be vanadium.

  Further, in Examples 1 to 3, when the protective film is made of an ITO compound or an IZO compound, it is confirmed that the optical characteristics of the substrate having a laminated structure are particularly good since the decrease in reflectance is small even after annealing. did it.

It is a partial longitudinal cross-sectional schematic diagram of the board | substrate which has the laminated structure which concerns on this embodiment. It is a schematic view when the metal film and the protective film are collectively wet-etched, (a) is a partial vertical cross-sectional schematic view of the substrate having the laminated structure according to the present embodiment, (b) It is a partial longitudinal cross-sectional schematic diagram of the board | substrate which has the conventional protective film. It is a partial longitudinal cross-sectional schematic diagram of the 2nd form of the laminated structure which concerns on this embodiment. It is a partial longitudinal cross-sectional schematic diagram of the 3rd form of the laminated structure which concerns on this embodiment. It is a partial longitudinal cross-sectional schematic diagram of the 4th form of the laminated structure which concerns on this embodiment. It is a process conceptual diagram of the manufacturing method of the board | substrate which has a laminated structure which concerns on this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate with laminated structure 20 Substrate 30 Laminated structure 31 Metal film 31a Side etching 31b Etching side surface 32 Protective films 33a and 33b Adhesion film 34 Second protective film 50 Photoresist 51 Light 52 Photomask 53 Light irradiated portion 90 A substrate having a protective film having a conventional thickness

Claims (2)

In the method of manufacturing a substrate having a laminated structure in which at least a metal film and a protective film are formed in this order on the surface of the substrate,
As the metal film, a metal film forming step of forming a film made of silver or a silver alloy containing silver as a main component,
A protective film forming step of forming a film made of a transparent oxide conductor or vanadium having a thickness of 8 mm to 32 mm as the protective film;
Etching step of wet etching the metal film and the protective film together with the same etchant to form an exposed surface,
In the etching step, the average speed of wet etching the metal film and the protective film at a time is not less than 5 秒 / second and not more than 300 Å / second, and the metal film and the protective film are collectively wet etched. The manufacturing method of the board | substrate which has a laminated structure characterized by the time required for being less than 300 second. The method for manufacturing a substrate having a laminated structure according to claim 1, wherein the substrate is a glass substrate, a metal substrate, a semiconductor substrate, a ceramic substrate, or a plastic substrate.

Images