KR102599939B1 - Etchant composition for silver thin layer and ehting method and mehtod for fabrication metal pattern using the same - Google Patents
Etchant composition for silver thin layer and ehting method and mehtod for fabrication metal pattern using the same Download PDFInfo
- Publication number
- KR102599939B1 KR102599939B1 KR1020190073477A KR20190073477A KR102599939B1 KR 102599939 B1 KR102599939 B1 KR 102599939B1 KR 1020190073477 A KR1020190073477 A KR 1020190073477A KR 20190073477 A KR20190073477 A KR 20190073477A KR 102599939 B1 KR102599939 B1 KR 102599939B1
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- silver
- thin film
- etchant composition
- transparent conductive
- Prior art date
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 107
- 239000004332 silver Substances 0.000 title claims abstract description 107
- 239000000203 mixture Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 28
- 229910052751 metal Inorganic materials 0.000 title claims description 16
- 239000002184 metal Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000010409 thin film Substances 0.000 claims abstract description 64
- 150000007524 organic acids Chemical class 0.000 claims abstract description 37
- 239000002253 acid Substances 0.000 claims abstract description 24
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 16
- 150000003839 salts Chemical class 0.000 claims abstract description 16
- 235000005985 organic acids Nutrition 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims abstract description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 9
- JTNCEQNHURODLX-UHFFFAOYSA-N 2-phenylethanimidamide Chemical compound NC(=N)CC1=CC=CC=C1 JTNCEQNHURODLX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000007513 acids Chemical class 0.000 claims abstract description 6
- 229910000343 potassium bisulfate Inorganic materials 0.000 claims abstract description 6
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims abstract description 5
- 235000019341 magnesium sulphate Nutrition 0.000 claims abstract description 5
- WBHQBSYUUJJSRZ-UHFFFAOYSA-M sodium bisulfate Chemical compound [Na+].OS([O-])(=O)=O WBHQBSYUUJJSRZ-UHFFFAOYSA-M 0.000 claims abstract description 5
- 229910000342 sodium bisulfate Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 80
- 238000005530 etching Methods 0.000 claims description 55
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- 239000010410 layer Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 15
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 8
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 claims description 2
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 claims description 2
- ZMPRRFPMMJQXPP-UHFFFAOYSA-N 2-sulfobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1S(O)(=O)=O ZMPRRFPMMJQXPP-UHFFFAOYSA-N 0.000 claims description 2
- SDGNNLQZAPXALR-UHFFFAOYSA-N 3-sulfophthalic acid Chemical compound OC(=O)C1=CC=CC(S(O)(=O)=O)=C1C(O)=O SDGNNLQZAPXALR-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 claims description 2
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-M Glycolate Chemical compound OCC([O-])=O AEMRFAOFKBGASW-UHFFFAOYSA-M 0.000 claims description 2
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 claims description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- 159000000003 magnesium salts Chemical class 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 159000000001 potassium salts Chemical class 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims description 2
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 claims description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 27
- 238000001179 sorption measurement Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000007547 defect Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004148 curcumin Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 oxalic acid Potassium citrate salt Magnesium citrate salt Chemical compound 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- VNDFJLWORZGXBJ-UHFFFAOYSA-L disodium 3-carboxy-3-hydroxypentanedioate propanedioic acid Chemical compound C(CC(O)(C(=O)O)CC(=O)[O-])(=O)[O-].[Na+].C(CC(=O)O)(=O)O.[Na+] VNDFJLWORZGXBJ-UHFFFAOYSA-L 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- DTPQZKZONQKKSU-UHFFFAOYSA-N silver azanide silver Chemical compound [NH2-].[Ag].[Ag].[Ag+] DTPQZKZONQKKSU-UHFFFAOYSA-N 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
본 발명은 은 박막 식각액 조성물에 관한 것으로, 조성물 총 중량에 대하여, (A) 질산 7 내지 15 중량%; (B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%; (B-2) 알킬술폰산 외 유기산 25 내지 65 중량%; (C) 유기산의 염 0.1 내지 7 중량%; (D) 황산염 5 내지 25 중량%; 및 (E) 물 잔량을 포함하고, 상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물을 제공한다.The present invention relates to a silver thin film etchant composition, based on the total weight of the composition, (A) 7 to 15% by weight of nitric acid; (B-1) 3 to 8% by weight of alkylsulfonic acid having 1 to 3 carbon atoms; (B-2) 25 to 65% by weight of organic acids other than alkylsulfonic acids; (C) 0.1 to 7% by weight of a salt of an organic acid; (D) 5 to 25% by weight of sulfate; and (E) a residual amount of water, and (D) the sulfate includes at least one selected from the group consisting of potassium bisulfate, sodium bisulfate, and magnesium sulfate.
Description
본 발명은 은 박막 식각액 조성물, 이를 이용한 식각 방법 및 금속 패턴의 형성 방법에 관한 것이다.The present invention relates to a silver thin film etchant composition, an etching method using the same, and a method for forming a metal pattern.
본격적인 정보화 시대로 접어들게 됨에 따라 대량의 정보를 처리 및 표시하는 디스플레이 분야가 급속도로 발전해 왔으며, 이에 부응하여 다양한 평판 디스플레이가 개발되어 각광받고 있다.As we enter the full-fledged information age, the display field that processes and displays large amounts of information has developed rapidly, and in response to this, various flat panel displays have been developed and are in the spotlight.
이러한 평판디스플레이 장치의 예로는 액정디스플레이장치(Liquid crystal display device: LCD), 플라즈마디스플레이장치(Plasma Display Panel device: PDP), 전계방출디스플레이장치(Field Emission Display device: FED), 전기발광디스플레이장치(Electroluminescence Display device: ELD), 유기발광디스플레이(Organic Light Emitting Diodes: OLED) 등을 들 수 있으며, 이러한 평판디스플레이 장치는 텔레비전이나 비디오 등의 가전분야뿐만 아니라 노트북과 같은 컴퓨터 및 핸드폰 등에 다양한 용도로 사용되고 있다. 이들 평판디스플레이 장치는 박형화, 경량화, 및 저소비전력화 등의 우수한 성능으로 인하여 기존에 사용되었던 브라운관(Cathode Ray Tube: NIT)을 빠르게 대체하고 있는 실정이다. Examples of such flat panel display devices include Liquid crystal display device (LCD), Plasma Display Panel device (PDP), Field Emission Display device (FED), and Electroluminescence display device. Display devices (ELD), Organic Light Emitting Diodes (OLED), etc. These flat display devices are used for a variety of purposes, not only in home appliances such as televisions and videos, but also in computers such as laptops and mobile phones. These flat panel display devices are rapidly replacing previously used cathode ray tubes (NITs) due to their excellent performance such as thinness, weight reduction, and low power consumption.
특히 OLED는 소자 자체적으로 빛을 발광하며 저전압에서도 구동될 수 있기 때문에 최근 휴대기기 등의 소형 디스플레이 시장에 빠르게 적용되고 있다. 또한 OLED는 소형 디스플레이를 넘어서 대형 TV의 상용화를 목전에 둔 상태이다.In particular, OLED emits light on its own and can be driven at low voltage, so it has recently been rapidly applied to the small display market such as mobile devices. In addition, OLED is going beyond small displays and is about to be commercialized for large-sized TVs.
한편, 산화주석인듐(Indium Tin Oxide, ITO)과 산화아연인듐(Indium Zinc Oxide, IZO)과 같은 도전성 금속은 빛에 대한 투과율이 비교적 뛰어나고, 도전성을 가지므로 평판디스플레이장치에 사용되는 칼라필터의 전극으로 널리 쓰이고 있다. 그러나 이들 금속들 또한 높은 저항을 가져 응답속도의 개선을 통한 평판표시장치의 대형화 및 고해상도 실현에 장애가 되고 있다.Meanwhile, conductive metals such as indium tin oxide (ITO) and indium zinc oxide (IZO) have relatively excellent light transmittance and conductivity, so they are used as electrodes for color filters in flat panel display devices. It is widely used. However, these metals also have high resistance, which is an obstacle to realizing larger and higher resolution flat panel displays through improved response speed.
또한, 반사판의 경우 과거 알루미늄(Al) 반사판을 주로 제품에 이용해왔으나, 휘도 향상을 통한 저전력 소비실현을 위해서는 반사율이 더 높은 금속으로의 재료변경을 모색하고 있는 상태이다. 이를 위해 평판디스플레이장치에 적용되고 있는 금속들에 비해 낮은 비저항과 높은 휘도를 가지고 있는 은(Ag: 비저항 약 1.59μΩ㎝)막, 은합금 또는 이를 포함한 다층막을 칼라필터의 전극, LCD 또는 OLED 배선 및 반사판에 적용, 평판표시장치의 대형화와 고 해상도 및 저전력 소비 등을 실현하고자 하여, 이 재료의 적용을 위한 식각액의 개발이 요구되었다.In addition, in the case of reflectors, aluminum (Al) reflectors have been mainly used in products in the past, but in order to realize low power consumption through improved brightness, changes to metals with higher reflectivity are being explored. For this purpose, silver (Ag: resistivity about 1.59μΩcm) film, silver alloy, or multilayer film containing it, which has low resistivity and high luminance compared to metals used in flat display devices, is used as electrodes of color filters, LCD or OLED wiring, and In order to apply it to a reflector and realize larger flat panel displays, higher resolution and lower power consumption, the development of an etchant for the application of this material was required.
그러나, 은(Ag)은 유리 등의 절연 기판 또는 진성 비정질 규소나 도핑된 비정질 규소 등으로 이루어진 반도체 기판 등의 하부 기판에 대해 접착성(adhesion)이 극히 불량하여 증착이 용이하지 않고, 배선의 들뜸(lifting) 또는 벗겨짐(Peeling)이 쉽게 유발된다. 또한, 은(Ag)도전층이 기판에 증착된 경우에도 이를 패터닝하기 위해 식각액을 사용하게 된다. 이러한 식각액으로서 종래의 식각액을 사용하는 경우 은(Ag)이 과도하게 식각되거나, 불균일하게 식각되어 배선의 들뜸 또는 벗겨짐 현상이 발생하고, 배선의 측면 프로파일이 불량하게 된다.However, silver (Ag) has extremely poor adhesion to lower substrates such as insulating substrates such as glass or semiconductor substrates made of intrinsic amorphous silicon or doped amorphous silicon, so deposition is not easy, and wiring may be lifted. Lifting or peeling is easily caused. Additionally, even when a silver (Ag) conductive layer is deposited on the substrate, an etchant is used to pattern it. When a conventional etchant is used as such an etchant, silver (Ag) is excessively etched or etched unevenly, causing lifting or peeling of the wiring, and the side profile of the wiring is poor.
또한 고해상도 구현을 위한 낮은 스큐(LOW Skew)구현이 공정을 하는데 있어 어려움이 있다.In addition, there are difficulties in implementing low skew for high-resolution implementation.
특히, 은(Ag)은 쉽게 환원이 되는 금속으로 식각 속도가 빨라야 잔사 유발 없이 식각이 되게 되는데 이때 식각 속도가 빨라 상하부 간 식각 속도의 차이가 발생하지 않아 식각 후 테이퍼 각(taper angle) 형성이 어렵고 식각 패턴의 직진성 확보에 어려움이 있어서, 배선 및 패턴 형성 시 많은 한계점을 가지고 있다. In particular, silver (Ag) is a metal that is easily reduced, so the etching speed must be fast to be etched without causing residue. In this case, the etching speed is fast, so there is no difference in etching speed between the upper and lower parts, making it difficult to form a taper angle after etching. Because it is difficult to ensure the straightness of the etch pattern, there are many limitations when forming wiring and patterns.
금속막이 테이퍼 각(taper angle) 없이 수직으로 서 있는 경우, 후속 공정에서 절연막 또는 후속 배선 형성 시 은(Ag)과 절연막 또는 배선 사이에 공극이 발생 할 수 있으며, 이러한 공극 발생은 전기적 쇼트 등 불량 발생의 원인이 된다.If the metal film stands vertically without a taper angle, voids may occur between the silver (Ag) and the insulating layer or wiring when forming the insulating layer or subsequent wiring in the subsequent process. Such voids may cause defects such as electrical shorts. It becomes the cause of.
대한민국 공개특허 제10-2013-0130515호는 은 함유 패턴의 식각액에 관한 것으로, 은(Ag) 또는 은 합금으로 이루어진 단일막, 및 상기 단일막과 투명전도막으로 구성되는 다층막을 동시에 식각할 수 있는 식각액 조성물을 개시하고 있으나, 당해 기술분야의 주요한 문제점인 잔사 및 은 재흡착 문제와 처리매수 증가에 따른 식각액 조성물의 성능 저하 문제를 완전히 해결하고 있지 못한 실정이다.Republic of Korea Patent Publication No. 10-2013-0130515 relates to an etchant for a silver-containing pattern, which can simultaneously etch a single film made of silver (Ag) or a silver alloy, and a multilayer film made of the single film and a transparent conductive film. Although an etchant composition has been disclosed, it has not completely solved the problems of residue and silver re-adsorption, which are major problems in the art, and the problem of deterioration in the performance of the etchant composition due to an increase in the number of treated sheets.
본 발명은 상술한 종래 기술의 문제점을 개선하기 위한 것으로, 은(Ag) 또는 은 합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성되는 다층막의 식각에 사용되며, 잔사(예를 들어, 은 잔사 및/또는 투명전도막 잔사 등) 및 은 재흡착 문제가 발생하지 않는 것을 특징으로 하는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.The present invention is intended to improve the problems of the prior art described above, and is used for etching a single film made of silver (Ag) or a silver alloy and a multilayer film composed of the single film and a transparent conductive film, and removes residues (e.g., The purpose is to provide a silver thin film etchant composition that does not cause silver residues and/or transparent conductive film residues, etc.) and silver re-adsorption problems.
또한, 본 발명은 상기 단일막 및 상기 다층막을 동시에 식각할 수 있는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a silver thin film etchant composition that can simultaneously etch the single film and the multilayer film.
또한, 본 발명은 식각 속도의 제어를 통해 side etch를 조절할 수 있는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.Additionally, the purpose of the present invention is to provide a silver thin film etchant composition that can control side etch through control of the etching rate.
또한, 본 발명은 하부막의 손상 없이 식각 균일성을 나타내는 습식 식각에 유용하게 사용될 수 있는 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a silver thin film etchant composition that can be usefully used in wet etching that exhibits etching uniformity without damaging the underlying film.
또한, 본 발명은 처리매수 증가에도 식각 성능이 유지되어 side etch 조절이 용이한 은 박막 식각액 조성물을 제공하는 것을 목적으로 한다.In addition, the purpose of the present invention is to provide a silver thin film etchant composition that maintains etching performance even when the number of treated sheets increases and allows easy side etch control.
또한, 본 발명은 상기 은 박막 식각액 조성물을 이용하는 식각 방법을 제공하는 것을 목적으로 한다.Additionally, the present invention aims to provide an etching method using the silver thin film etchant composition.
또한, 본 발명은 상기 은 박막 식각액 조성물을 이용하는 금속 패턴의 형성 방법을 제공하는 것을 목적으로 한다.Additionally, the present invention aims to provide a method of forming a metal pattern using the silver thin film etchant composition.
상기 목적을 달성하기 위해, 본 발명은, 조성물 총 중량에 대하여, (A) 질산 7 내지 15 중량%; (B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%; (B-2) 알킬술폰산 외 유기산 25 내지 65 중량%; (C) 유기산의 염 0.1 내지 7 중량%; (D) 황산염 5 내지 25 중량%; 및 (E) 물 잔량을 포함하고, 상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물을 제공한다.In order to achieve the above object, the present invention, based on the total weight of the composition, (A) 7 to 15% by weight of nitric acid; (B-1) 3 to 8% by weight of alkylsulfonic acid having 1 to 3 carbon atoms; (B-2) 25 to 65% by weight of organic acids other than alkylsulfonic acids; (C) 0.1 to 7% by weight of a salt of an organic acid; (D) 5 to 25% by weight of sulfate; and (E) a residual amount of water, and (D) the sulfate includes at least one selected from the group consisting of potassium bisulfate, sodium bisulfate, and magnesium sulfate.
또한, 본 발명은, 상기 은 박막 식각액 조성물을 사용하는 식각 방법을 제공한다.Additionally, the present invention provides an etching method using the silver thin film etchant composition.
또한, 본 발명은 상기 은 박막 식각액 조성물을 사용하는 금속 패턴의 형성 방법을 제공한다.Additionally, the present invention provides a method of forming a metal pattern using the silver thin film etchant composition.
본 발명의 은 박막 식각액 조성물은 은(Ag) 또는 은 합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성되는 다층막의 식각에 사용되어, 잔사(예를 들어, 은 잔사 및/또는 투명전도막 잔사 등) 및 은 재흡착 문제가 발생하지 않는 효과를 제공한다.The silver thin film etchant composition of the present invention is used for etching a single film made of silver (Ag) or a silver alloy and a multilayer film composed of the single film and a transparent conductive film to remove residues (e.g., silver residues and/or transparent conductive films). membrane residue, etc.) and silver re-adsorption problems do not occur.
또한, 본 발명의 은 박막 식각액 조성물은 상기 단일막 및 상기 다층막을 동시에 식각하여, 식각 효율을 향상시키는 효과를 제공한다.In addition, the silver thin film etchant composition of the present invention provides the effect of improving etching efficiency by simultaneously etching the single film and the multilayer film.
또한, 본 발명의 은 박막 식각액 조성물은 etch stop 현상을 발생시켜, 식각 속도를 제어하고, side etch를 조절할 수 있는 효과를 제공한다.In addition, the silver thin film etchant composition of the present invention generates an etch stop phenomenon, providing the effect of controlling the etch rate and side etch.
또한, 본 발명의 은 박막 식각액 조성물은 하부막의 손상 없이 식각 균일성을 나타내는 습식 식각에 유용하게 사용될 수 있다.In addition, the silver thin film etchant composition of the present invention can be usefully used in wet etching that exhibits etching uniformity without damaging the underlying film.
본 발명은, 조성물 총 중량에 대하여, (A) 질산 7 내지 15 중량%; (B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%; (B-2) 알킬술폰산 외 유기산 25 내지 65 중량%; (C) 유기산의 염 0.1 내지 7 중량%; (D) 황산염 5 내지 25 중량%; 및 (E) 물 잔량을 포함하고, 상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물을 제공한다.The present invention, based on the total weight of the composition, (A) 7 to 15% by weight of nitric acid; (B-1) 3 to 8% by weight of alkylsulfonic acid having 1 to 3 carbon atoms; (B-2) 25 to 65% by weight of organic acids other than alkylsulfonic acids; (C) 0.1 to 7% by weight of a salt of an organic acid; (D) 5 to 25% by weight of sulfate; and (E) a residual amount of water, and (D) the sulfate includes at least one selected from the group consisting of potassium bisulfate, sodium bisulfate, and magnesium sulfate.
본 발명의 은 박막 식각액 조성물은 은(Ag) 또는 은 합금으로 이루어진 단일막 및 상기 단일막과 투명전도막으로 구성되는 다층막의 식각에 사용될 수 있으며, 잔사(예를 들어, 은 잔사 및/또는 투명전도막 잔사 등) 및 은 재흡착 문제가 발생하지 않는 것을 특징으로 한다.The silver thin film etchant composition of the present invention can be used for etching a single film made of silver (Ag) or a silver alloy and a multilayer film composed of the single film and a transparent conductive film, and removes residues (e.g., silver residues and/or transparent conductive films). Conductive film residues, etc.) and silver re-adsorption problems do not occur.
본 발명의 은 박막 식각액 조성물은 상기 단일막 및 상기 다층막을 동시에 식각할 수 있다.The silver thin film etchant composition of the present invention can simultaneously etch the single film and the multilayer film.
본 발명의 은 박막 식각액 조성물은 etch stop 현상을 발생시켜, 식각 속도를 제어하고, side etch를 조절할 수 있는 효과를 제공할 수 있다.The silver thin film etchant composition of the present invention can generate an etch stop phenomenon, control the etch rate, and provide the effect of controlling side etch.
본 발명의 은 박막 식각액 조성물은 하부막 손상이 없어 식각 균일성을 나타내는 습식 식각에 유용하게 사용될 수 있다.The silver thin film etchant composition of the present invention can be usefully used in wet etching to show etching uniformity without damaging the underlying film.
본 발명의 은 박막 식각액 조성물은 처리매수 증가에도 식각 성능이 유지되어 side etch 조절이 용이한 효과를 제공할 수 있다.The silver thin film etchant composition of the present invention maintains etching performance even as the number of treated sheets increases, providing the effect of facilitating side etch control.
구체적으로, 식각 공정이 수행되어 은 박막 식각액 조성물에 용해된 은의 농도가 1,000ppm 내지 1,500 ppm까지 증가하더라도 상기 은 박막 식각액 조성물의 제조 직후와 실질적으로 동등한 수준의 우수한 식각 성능을 제공할 수 있다.Specifically, even if the etching process is performed and the concentration of silver dissolved in the silver thin film etchant composition increases to 1,000 ppm to 1,500 ppm, excellent etching performance can be provided at a level substantially equivalent to that immediately after manufacturing the silver thin film etchant composition.
상기 은 합금은 은을 주성분으로 하여 Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa 및 Ti 등의 다른 금속을 포함하는 합금 형태와; 은의 질화물, 규화물, 탄화물, 산화물 등을 포함할 수 있으며, 이에 한정되지 않는다.The silver alloy is an alloy containing silver as a main component and other metals such as Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa, and Ti; It may include silver nitride, silicide, carbide, oxide, etc., but is not limited thereto.
상기 투명전도막은 산화주석인듐(ITO), 산화아연인듐(IZO), 산화주석아연인듐(ITZO) 및 산화갈륨아연인듐(IGZO)으로 이루어진 군으로부터 선택되는 1종 이상을 포함할 수 있다.The transparent conductive film may include one or more types selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and gallium zinc indium oxide (IGZO).
상기 다층막은 투명전도막/은, 투명전도막/은 합금, 투명전도막/은/투명전도막 또는 투명전도막/은 합금/투명전도막으로 형성되는 것을 포함할 수 있다.The multilayer film may include a transparent conductive film/silver, a transparent conductive film/silver alloy, a transparent conductive film/silver/transparent conductive film, or a transparent conductive film/silver alloy/transparent conductive film.
본 발명의 은 박막 식각액 조성물은 반사막용 OLED TFT 어레이 기판, 터치스크린 패널용 trace 배선 또는 나노와이어(nanowire) 배선의 형성에 사용될 수 있으며, 이에 한정되지 않고 상기 단일막 및 상기 다층막을 포함하는 전자 부품 소재에 사용될 수 있다.The silver thin film etchant composition of the present invention can be used for forming OLED TFT array substrates for reflective films, trace wiring for touch screen panels, or nanowire wiring, but is not limited to this, and electronic components including the single film and the multilayer film. Can be used for materials.
(A) 질산(A) Nitric acid
본 발명의 은 박막 식각액 조성물에 포함되는 상기 질산은 산화제로서, 상기 은 박막과 상기 투명전도막을 산화시키는 데 사용될 수 있다.The silver nitrate oxidizing agent contained in the silver thin film etchant composition of the present invention can be used to oxidize the silver thin film and the transparent conductive film.
상기 질산의 함량은 조성물 총 중량에 대하여, 7 내지 15 중량%로 포함되며, 8 내지 12 중량%가 바람직하다. 상기 질산이 상기 함량 범위 내로 포함되는 경우, 식각 속도의 제어가 용이하여, 상기 은 박막과 상기 투명전도막을 균일하게 식각할 수 있다.The content of nitric acid is 7 to 15% by weight, preferably 8 to 12% by weight, based on the total weight of the composition. When the nitric acid content is within the above range, the etching rate can be easily controlled, and the silver thin film and the transparent conductive film can be uniformly etched.
(B) 유기산(B) Organic acid
본 발명의 은 박막 식각액 조성물에 포함되는 상기 유기산은 상기 은 박막에 대한 식각제로서, 상기 질산에 의해 산화된 상기 은 박막을 식각하는 데 사용될 수 있다.The organic acid included in the silver thin film etchant composition of the present invention is an etchant for the silver thin film and can be used to etch the silver thin film oxidized by nitric acid.
상기 유기산은 (B-1) 탄소수 1 내지 3의 알킬술폰산 및 (B-2) 알킬술폰산 외 유기산을 포함할 수 있다.The organic acid may include organic acids other than (B-1) alkylsulfonic acid having 1 to 3 carbon atoms and (B-2) alkylsulfonic acid.
(B-1) 탄소수 1 내지 3의 알킬술폰산(B-1) Alkylsulfonic acid having 1 to 3 carbon atoms
상기 탄소수 1 내지 3의 알킬술폰산은, 예를 들어, 메탄술폰산, 에탄술폰산 또는 프로판술폰산일 수 있으며, 바람직하게는 메탄술폰산일 수 있다.The alkylsulfonic acid having 1 to 3 carbon atoms may be, for example, methanesulfonic acid, ethanesulfonic acid, or propanesulfonic acid, and preferably methanesulfonic acid.
상기 탄소수 1 내지 3의 알킬술폰산의 함량은 조성물 총 중량에 대하여, 3 내지 8 중량%로 포함될 수 있다. 상기 탄소수 1 내지 3의 알킬술폰산이 상기 함량 범위 내로 포함되는 경우, 상기 은 박막의 식각 속도의 제어가 용이하여, 은 잔사 및 은 재흡착 발생에 따른 불량을 방지할 수 있다.The content of the alkylsulfonic acid having 1 to 3 carbon atoms may be 3 to 8% by weight based on the total weight of the composition. When the alkylsulfonic acid having 1 to 3 carbon atoms is contained within the above content range, the etching rate of the silver thin film can be easily controlled, thereby preventing defects due to silver residue and silver re-adsorption.
(B-2) 알킬술폰산 외 유기산(B-2) Organic acids other than alkylsulfonic acids
상기 알킬술폰산 외 유기산은, 예를 들어, 아세트산, 구연산, 글리콜산, 말론산, 락트산, 타르타르산, 부탄산, 포름산, 글루콘산, 옥살산, 펜탄산, 설포벤조산, 설포석신산, 설포프탈산, 살리실산, 설포살리실산, 벤조산, 글리세르산, 석신산, 말산, 이소시트르산, 프로펜산, 이미노디아세트산 및 에틸렌디아민테트라아세트산으로 이루어진 군으로부터 선택되는 1종 이상, 바람직하게는 2종 이상을 포함할 수 있다. 일 구체예로는, 상기 알킬술폰산 외 유기산은 아세트산, 구연산, 글리콜산, 말론산, 락트산 및 타르타르산으로 이루어진 군으로부터 선택되는 1종 이상, 바람직하게는 2종 이상을 포함하고, 가장 바람직하게는 아세트산 및 구연산을 포함할 수 있다Organic acids other than the alkylsulfonic acids include, for example, acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, tartaric acid, butanoic acid, formic acid, gluconic acid, oxalic acid, pentanoic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, It may contain at least one, preferably at least two, selected from the group consisting of sulfosalicylic acid, benzoic acid, glyceric acid, succinic acid, malic acid, isocitric acid, propenoic acid, iminodiacetic acid, and ethylenediaminetetraacetic acid. In one embodiment, the organic acid other than the alkylsulfonic acid includes at least one, preferably at least two, selected from the group consisting of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid, and most preferably acetic acid. and citric acid.
상기 알킬술폰산 외 유기산의 함량은 조성물 총 중량에 대하여, 25 내지 65 중량%로 포함되며, 45 내지 60 중량%가 바람직하다. 상기 알킬술폰산 외 유기산이 상기 함량 범위 내로 포함되는 경우, 상기 은 박막의 식각 속도의 제어가 용이하여, 은 잔사 및 은 재흡착 발생에 따른 불량을 방지할 수 있다.The content of organic acids other than the alkylsulfonic acid is 25 to 65% by weight, preferably 45 to 60% by weight, based on the total weight of the composition. When the organic acid other than the alkylsulfonic acid is included within the above content range, the etching rate of the silver thin film can be easily controlled, thereby preventing defects due to silver residue and silver re-adsorption.
(C) 유기산의 염(C) Salts of organic acids
본 발명의 은 박막 식각액 조성물에 포함되는 상기 유기산의 염은, 은 박막에 대한 보조 식각제로서 처리매수에 따른 side etch를 제어하는 데 사용될 수 있다.The salt of the organic acid included in the silver thin film etchant composition of the present invention can be used as an auxiliary etchant for the silver thin film to control side etch depending on the number of treated sheets.
상기 유기산의 염은, 예를 들어, 아세트산염, 구연산염, 글리콜산염, 말론산염, 락트산염 및 타르타르산염으로 이루어진 군으로부터 선택되는 1종 이상인 것이 바람직하며, 구연산염인 것이 더욱 바람직하다.The salt of the organic acid is preferably at least one selected from the group consisting of acetate, citrate, glycolate, malonate, lactate and tartrate, and more preferably citrate.
또한, 상기 유기산의 염은 유기산의 금속염인 것이 바람직하며, 유기산의 칼륨염, 마그네슘염 및 나트륨염으로 이루어진 군으로부터 선택되는 1종 이상인 것이 더욱 바람직하다.In addition, the salt of the organic acid is preferably a metal salt of the organic acid, and more preferably is at least one selected from the group consisting of potassium salts, magnesium salts, and sodium salts of the organic acid.
상기 유기산의 염의 함량은 조성물 총 중량에 대하여, 0.1 내지 7 중량%로 포함되며, 0.5 내지 5 중량%가 바람직하다. 상기 유기산의 염이 상기 함량 범위 내로 포함되는 경우, 상기 은 박막 식각액의 지속적인 사용에도 식각 속도 제어가 유지되며, 은 잔사 및 은 재흡착 발생에 따른 불량을 방지할 수 있다.The content of the salt of the organic acid is 0.1 to 7% by weight, preferably 0.5 to 5% by weight, based on the total weight of the composition. When the salt of the organic acid is contained within the above content range, etching rate control is maintained even with continuous use of the silver thin film etchant, and defects due to silver residue and silver re-adsorption can be prevented.
(D) 황산염(D) Sulfate
본 발명의 은 박막 식각액 조성물에 포함되는 상기 황산염은, 상기 투명전도막에 대한 식각제로서 상기 투명전도막을 식각하는 데 사용될 수 있다.The sulfate contained in the silver thin film etchant composition of the present invention can be used as an etchant for the transparent conductive film to etch the transparent conductive film.
또한, 본 발명의 은 박막 식각액 조성물에 포함되는 상기 황산염은, 상기 은 박막의 etch stop 현상을 발생시키고, 따라서 식각 공정 상에서 식각 시간(etching time)이 증가하더라도 side etch가 증가하는 것을 방지할 수 있다.In addition, the sulfate contained in the silver thin film etchant composition of the present invention causes an etch stop phenomenon in the silver thin film, and thus can prevent side etch from increasing even if the etching time increases during the etching process. .
다시 말하면, 본 발명의 은 박막 식각액 조성물은 상기 황산염을 포함함으로써, etch stop 현상의 발생을 제어하고, 이에 따라 식각 속도가 제어되어, side etch가 조절될 수 있다.In other words, the silver thin film etchant composition of the present invention includes the sulfate, thereby controlling the occurrence of the etch stop phenomenon, thereby controlling the etch rate and controlling the side etch.
상기 황산염의 함량은 조성물 총 중량에 대하여, 5 내지 25 중량%로 포함되며, 7 내지 12 중량%가 바람직하다. 상기 황산염이 상기 함량 범위 내로 포함되는 경우, 식각 속도의 제어, 즉, 식각 공정 상에서 식각 시간의 제어가 용이하며, etch stop 현상이 규칙적으로 발현되어, 상기 은 박막과 상기 투명전도막을 균일하게 식각할 수 있다.The content of the sulfate is 5 to 25% by weight, preferably 7 to 12% by weight, based on the total weight of the composition. When the sulfate is contained within the above content range, it is easy to control the etching rate, that is, control the etching time in the etching process, and the etch stop phenomenon occurs regularly, allowing the silver thin film and the transparent conductive film to be uniformly etched. You can.
상기 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함할 수 있으며, 바람직하게는 중황산칼륨을 포함할 수 있다The sulfate may include one or more selected from the group consisting of potassium bisulfate, sodium bisulfate, and magnesium sulfate, and preferably includes potassium bisulfate.
(E) 물(E) water
본 발명의 은 박막 식각액 조성물에 포함되는 상기 물은 반도체 공정용 탈이온수일 수 있으며, 바람직하게는 18㏁/㎝ 이상의 상기 탈이온수를 사용할 수 있다.The water included in the silver thin film etchant composition of the present invention may be deionized water for semiconductor processing, and deionized water of 18 MΩ/cm or more may be preferably used.
상기 물의 함량은 조성물 총 중량이 100 중량%가 되도록 하는 잔량으로 포함될 수 있다.The water content may be included in a residual amount such that the total weight of the composition is 100% by weight.
또한, 본 발명은, 본 발명에 따른 은 박막 식각액 조성물을 이용하는 식각 방법을 제공한다.Additionally, the present invention provides an etching method using the silver thin film etchant composition according to the present invention.
상기 식각 방법은, i) 기판 상에, 은 또는 은 합금으로 이루어진 단일막, 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 형성하는 단계; ii) 상기 단일막 또는 상기 다층막 위에 선택적으로 광 반응 물질을 남기는 단계; 및 iii) 본 발명에 따른 은 박막 식각액 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함한다.The etching method includes the steps of i) forming a single film made of silver or a silver alloy, or a multilayer film made of the single film and a transparent conductive film, on a substrate; ii) selectively leaving a photo-reactive material on the single layer or the multilayer layer; and iii) etching the single film or the multilayer film using the silver thin film etchant composition according to the present invention.
또한, 본 발명은, 본 발명에 따른 은 박막 식각액 조성물을 이용하는 금속 패턴의 형성 방법을 제공한다.Additionally, the present invention provides a method of forming a metal pattern using the silver thin film etchant composition according to the present invention.
상기 금속 패턴의 형성 방법은, i) 기판 상에, 은 또는 은 합금으로 이루어진 단일막, 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 형성하는 단계; 및 ii) 본 발명에 따른 은 박막 식각액 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함한다.The method of forming the metal pattern includes the steps of i) forming a single film made of silver or a silver alloy, or a multilayer film made of the single film and a transparent conductive film, on a substrate; and ii) etching the single film or the multilayer film using the silver thin film etchant composition according to the present invention.
이하, 실시예를 통하여 본 발명을 보다 상세히 설명한다. 그러나 하기의 실시예는 본 발명을 더욱 구체적으로 설명하기 위한 것으로서, 본 발명의 범위가 하기의 실시예에 의하여 한정되는 것은 아니다. 본 발명의 범위는 특허청구범위에 표시되었고, 더욱이 특허 청구범위 기록과 균등한 의미 및 범위 내에서의 모든 변경을 함유하고 있다. 또한, 이하의 실시예, 비교예에서 함유량을 나타내는 "%" 및 "부"는 특별히 언급하지 않는 한 질량 기준이다.Hereinafter, the present invention will be described in more detail through examples. However, the following examples are intended to illustrate the present invention in more detail, and the scope of the present invention is not limited by the following examples. The scope of the present invention is indicated in the claims, and further includes all changes within the scope and meaning equivalent to the record of the claims. In addition, in the following examples and comparative examples, “%” and “part” indicating content are based on mass unless otherwise specified.
실시예 1 내지 7 및 비교예 1 내지 10에 따른 은 박막 식각액 조성물의 제조Preparation of silver thin film etchant compositions according to Examples 1 to 7 and Comparative Examples 1 to 10
하기 [표 1]을 참조하여, 실시예 및 비교예에 따른 은 박막 식각액 조성물을 제조하였다.With reference to [Table 1] below, silver thin film etchant compositions according to Examples and Comparative Examples were prepared.
탈이온수(E)
deionized water
메탄
술폰산(B-1)
methane
sulfonic acid
아세트산(B-2)
acetic acid
구연산(B-2)
citric acid
옥살산(B-2)
oxalic acid
나트륨염citric acid
sodium salt
나트륨염malonic acid
sodium salt
칼륨bisulfuric acid
potassium
마그네슘sulfuric acid
magnesium
시험예 1: Side Etch 측정Test Example 1: Side Etch Measurement
기판 상에 ITO(산화주석인듐)/은/ITO 삼중막을 형성한 뒤, 상기 삼중막 상에 포토레지스트를 패터닝하였다. 상기 기판을 실시예 및 비교예에 따른 은 박막 식각액 조성물을 이용하여 식각 공정을 수행하였다.After forming an ITO (indium tin oxide)/silver/ITO triple layer on the substrate, photoresist was patterned on the triple layer. An etching process was performed on the substrate using the silver thin film etchant composition according to Examples and Comparative Examples.
상기 삼중막의 전체 영역 중, 상기 포토레지스트가 패터닝되지 않은 영역의 식각이 종료된 시점을 기준으로, Over Etch(O/E)를 40%, 70%, 100%로 수행하였다. 상기 포토레지스트의 끝단으로부터 상기 삼중막 중 은 박막까지의 거리를 전자주사현미경(SEM; 모델명: SU-8010, HITACHI)을 이용하여 측정하고, 하기 [표 2]에 나타내었다.Based on the time when etching of the area where the photoresist was not patterned was completed among the entire area of the triple layer, Over Etch (O/E) was performed at 40%, 70%, and 100%. The distance from the tip of the photoresist to the silver thin film of the triple layer was measured using a scanning electron microscope (SEM; model name: SU-8010, HITACHI), and is shown in [Table 2] below.
시험예 2: 은(Ag) 잔사 측정Test Example 2: Silver (Ag) residue measurement
기판 상에 ITO/은/ITO 삼중막을 형성한 뒤, 상기 삼중막 상에 포토레지스트를 패터닝하였다.After forming an ITO/silver/ITO triple layer on a substrate, photoresist was patterned on the triple layer.
분사식 식각 방식의 실험장비(모델명: ETCHER(TFT), SEMES사) 내에 실시예 및 비교예에 따른 은 박막 식각액 조성물을 각각 넣고, 온도를 40℃로 설정하여 가온한 후, 온도가 40±0.1℃에 도달하였을 때, 85초 동안 상기 기판의 식각 공정을 수행하였다.The silver thin film etchant compositions according to the Examples and Comparative Examples were placed in a spray-etching type experimental equipment (model name: ETCHER (TFT), SEMES), and the temperature was set to 40°C and heated, and then the temperature was 40±0.1°C. When reached, the etching process of the substrate was performed for 85 seconds.
식각 공정이 종료된 후, 탈이온수로 세정하고, 열풍건조장치를 이용하여 건조한 뒤, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; 모델명: SU-8010, HITACHI사 제조)을 이용하여, 상기 삼중막의 전체 영역 중, 상기 포토레지스트가 패터닝되지 않은 영역에 은이 식각 되지 않고 남아 있는 현상인 은 잔사를 측정하고, 하기 기준으로 평가하여, 하기 [표 2]에 나타내었다.After the etching process was completed, it was washed with deionized water, dried using a hot air dryer, and then the photoresist was removed using a photoresist stripper (PR stripper). After cleaning and drying, using a scanning electron microscope (SEM; model name: SU-8010, manufactured by HITACHI), silver residue, which is a phenomenon in which silver remains without being etched in the area where the photoresist is not patterned, among the entire area of the triple layer, is detected. was measured and evaluated based on the following criteria, and is shown in [Table 2] below.
<잔사 측정 평가 기준><Residue measurement evaluation criteria>
O: 양호(잔사 미발생)O: Good (no residue)
X: 불량(잔사 발생)X: Defect (residue generated)
시험예 3: 은(Ag) 재흡착 측정Test Example 3: Silver (Ag) re-adsorption measurement
기판 상에 ITO/은/ITO 삼중막을 형성한 뒤, 상기 삼중막 상에 포토레지스트를 패터닝하였다.After forming an ITO/silver/ITO triple layer on a substrate, photoresist was patterned on the triple layer.
분사식 식각 방식의 실험장비(모델명: ETCHER(TFT), SEMES사) 내에 실시예 및 비교예에 따른 은 박막 식각액 조성물을 각각 넣고, 온도를 40℃로 설정하여 가온한 후, 온도가 40±0.1℃에 도달하였을 때, 85초 동안 상기 기판의 식각 공정을 수행하였다.The silver thin film etchant compositions according to the Examples and Comparative Examples were placed in a spray-etching type experimental equipment (model name: ETCHER (TFT), SEMES), and the temperature was set to 40°C and heated, and then the temperature was 40±0.1°C. When reached, the etching process of the substrate was performed for 85 seconds.
식각 공정이 종료된 후, 탈이온수로 세정하고, 열풍건조장치를 이용하여 건조한 뒤, 포토레지스트 박리기(PR stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 상기 기판을 절단하고, 그 단면을 전자주사현미경(SEM; 모델명: SU-8010, HITACHI사 제조)을 이용하여 측정하였다. 상기 식각 공정으로 인해, 상기 기판 내 노출된 S/D 부의 Ti/Al/Ti 삼중막의 상부 Ti에 흡착된 은 입자의 개수를 측정하고, 하기의 기준으로 평가하여, 하기 [표 2]에 나타내었다.After the etching process was completed, it was washed with deionized water, dried using a hot air dryer, and then the photoresist was removed using a photoresist stripper (PR stripper). After cleaning and drying, the substrate was cut, and the cross section was measured using a scanning electron microscope (SEM; model name: SU-8010, manufactured by HITACHI). Due to the etching process, the number of silver particles adsorbed on the upper Ti of the Ti/Al/Ti triple layer of the exposed S/D portion in the substrate was measured, evaluated based on the following criteria, and is shown in [Table 2] below. .
<은 재흡착 평가 기준><Silver re-adsorption evaluation criteria>
양호: (5개 미만)Good: (less than 5)
보통: (5개 이상 50개 미만)Normal: (5 or more but less than 50)
불량: (50개 이상)Defective: (50 or more)
상기 표 2에서, Ag 농도가 0ppm인 경우는 은 박막 식각액 조성물의 제조 직후 상태에 해당하며, Ag 농도가 1,000ppm인 경우는 식각 공정이 수행되어 은 박막 식각액 조성물 내에 Ag가 용해되어 있는 상태에 해당한다.In Table 2, when the Ag concentration is 0 ppm, it corresponds to the state immediately after manufacturing the silver thin film etchant composition, and when the Ag concentration is 1,000 ppm, it corresponds to the state in which Ag is dissolved in the silver thin film etchant composition after the etching process has been performed. do.
실시예에 따른 은 박막 식각액 조성물을 사용하여 식각 공정을 수행하는 경우, over etch 수행 시, 50 내지 100% 전체 범위에서 side etch가 0.2μm 내외로 측정되어, 본 발명에서 목적하는 수준의 side etch가 유지되며, 은 잔사 및 은 재흡착 문제가 발생하지 않는 것을 알 수 있다. 또한 조성물 제조 직후(Ag 0ppm)와 비교하여, 처리매수가 증가되어 조성물 내 은의 농도가 증가된 후(Ag 1,000ppm)에도, side etch가 유지되고, 은 잔사 및 재흡착 문제가 발생하지 않는 것을 알 수 있다.When an etching process is performed using the silver thin film etchant composition according to the embodiment, when over etching is performed, the side etch is measured to be around 0.2 μm in the entire range of 50 to 100%, and the side etch is at the level desired in the present invention. It can be seen that the silver residue and silver re-adsorption problems do not occur. In addition, compared to immediately after manufacturing the composition (Ag 0ppm), it was found that even after the concentration of silver in the composition increased (Ag 1,000ppm) due to an increase in the number of treated sheets, side etch was maintained and silver residue and re-adsorption problems did not occur. You can.
반면, 비교예에 따른 은 박막 식각액 조성물을 사용하여 식각 공정을 수행하는 경우, 너무 많이 식각되거나, 전혀 식각되지 않는 등 side etch의 조절이 용이하지 않고, 은 잔사 및 은 재흡착 문제가 발생하는 것을 알 수 있으며, 처리매수 증가에 따라 side etch 조절이 더욱 어렵고, 은 잔사 및 은 재흡착 문제가 더욱 불량해지는 것을 확인할 수 있다.On the other hand, when the etching process is performed using the silver thin film etchant composition according to the comparative example, it is not easy to control the side etch, such as too much etching or not etching at all, and silver residue and silver re-adsorption problems occur. It can be seen that as the number of treated sheets increases, side etch control becomes more difficult, and silver residue and silver re-adsorption problems become more severe.
이와 같이, 본 발명에 따른 은 박막 식각액 조성물을 사용하여 식각 공정을 수행하는 경우, side etch 조절이 용이하고, 은 잔사 및 은 재흡착 문제가 발생하지 않으며, 처리매수가 증가하여도 우수한 식각 성능이 제공된다는 것을 알 수 있다.As such, when an etching process is performed using the silver thin film etchant composition according to the present invention, side etch control is easy, silver residue and silver re-adsorption problems do not occur, and excellent etching performance is achieved even when the number of treated sheets increases. You can see that it is provided.
Claims (13)
(A) 질산 7 내지 15 중량%;
(B-1) 탄소수 1 내지 3의 알킬술폰산 3 내지 8 중량%;
(B-2) 알킬술폰산 외 유기산 25 내지 65 중량%;
(C) 유기산의 염 0.1 내지 7 중량%;
(D) 황산염 5 내지 25 중량%; 및
(E) 물 잔량을 포함하고,
상기 (B-2) 알킬술폰산 외 유기산은, 아세트산, 구연산, 말론산, 부탄산, 포름산, 글루콘산, 글리콜산, 옥살산, 펜탄산, 설포벤조산, 설포석신산, 설포프탈산, 살리실산, 설포살리실산, 벤조산, 락트산, 글리세르산, 석신산, 말산, 타르타르산, 이소시트르산, 프로펜산, 이미노디아세트산 및 에틸렌디아민테트라아세트산으로 이루어진 군으로부터 선택되는 2종 이상을 포함하며,
상기 (C) 유기산의 염은 아세트산염, 구연산염, 글리콜산염, 말론산염, 락트산염 및 타르타르산염으로 이루어진 군으로부터 선택되는 1종 이상을 포함하며,
상기 (D) 황산염은 중황산칼륨, 중황산나트륨 및 황산마그네슘으로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물.
With respect to the total weight of the composition,
(A) 7 to 15% by weight of nitric acid;
(B-1) 3 to 8% by weight of alkylsulfonic acid having 1 to 3 carbon atoms;
(B-2) 25 to 65% by weight of organic acids other than alkylsulfonic acids;
(C) 0.1 to 7% by weight of a salt of an organic acid;
(D) 5 to 25% by weight of sulfate; and
(E) Contains water balance,
Organic acids other than the alkylsulfonic acid (B-2) include acetic acid, citric acid, malonic acid, butanoic acid, formic acid, gluconic acid, glycolic acid, oxalic acid, pentanoic acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, Contains two or more selected from the group consisting of benzoic acid, lactic acid, glyceric acid, succinic acid, malic acid, tartaric acid, isocitric acid, propenoic acid, iminodiacetic acid and ethylenediaminetetraacetic acid,
The salt of the organic acid (C) includes at least one selected from the group consisting of acetate, citrate, glycolate, malonate, lactate and tartrate,
(D) A silver thin film etchant composition, wherein the sulfate includes at least one selected from the group consisting of potassium bisulfate, sodium bisulfate, and magnesium sulfate.
상기 (B-1) 탄소수 1 내지 3의 알킬술폰산은 메탄술폰산인 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 1,
(B-1) A silver thin film etchant composition, wherein the alkylsulfonic acid having 1 to 3 carbon atoms is methanesulfonic acid.
상기 (B-2) 알킬술폰산 외 유기산은 아세트산 및 구연산을 포함하는 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 1,
(B-2) A silver thin film etchant composition, wherein the organic acid other than the alkylsulfonic acid includes acetic acid and citric acid.
상기 (B-2) 알킬술폰산 외 유기산은 45 내지 60 중량%로 포함되는 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 1,
(B-2) A silver thin film etchant composition, characterized in that the organic acid other than the alkylsulfonic acid is contained in an amount of 45 to 60% by weight.
상기 (C) 유기산의 염은 유기산의 금속염인 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 1,
(C) A silver thin film etchant composition, characterized in that the salt of the organic acid is a metal salt of the organic acid.
상기 (C) 유기산의 염은 유기산의 칼륨염, 유기산의 마그네슘염 및 유기산의 나트륨염으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 6,
(C) A silver thin film etchant composition, wherein the salt of the organic acid is at least one selected from the group consisting of potassium salts of organic acids, magnesium salts of organic acids, and sodium salts of organic acids.
상기 은 박막 식각액 조성물은 은 또는 은 합금으로 이루어진 단일막, 또는 상기 단일막과 투명전도막으로 구성되는 다층막을 동시에 식각할 수 있는 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 1,
The silver thin film etchant composition is capable of simultaneously etching a single film made of silver or a silver alloy, or a multilayer film made of the single film and a transparent conductive film.
상기 투명전도막은 산화주석인듐(ITO), 산화아연인듐(IZO), 산화주석아연인듐(ITZO) 및 산화갈륨아연인듐(IGZO)으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 하는 은 박막 식각액 조성물.
In claim 9,
The transparent conductive film is a silver thin film etchant composition, characterized in that at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and gallium zinc indium oxide (IGZO). .
상기 다층막은 투명전도막/은, 투명전도막/은 합금, 투명전도막/은/투명전도막 또는 투명전도막/은 합금/투명전도막으로 형성되는 것을 포함하는 은 박막 식각액 조성물.
In claim 9,
A silver thin film etchant composition comprising the multilayer film being formed of a transparent conductive film/silver, a transparent conductive film/silver alloy, a transparent conductive film/silver/transparent conductive film, or a transparent conductive film/silver alloy/transparent conductive film.
상기 단일막 또는 상기 다층막 위에 선택적으로 광 반응 물질을 남기는 단계; 및
청구항 1의 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함하는 식각 방법.
Forming a single film made of silver or a silver alloy, or a multilayer film made of the single film and a transparent conductive film, on a substrate;
selectively leaving a photo-reactive material on the single layer or the multilayer layer; and
An etching method comprising etching the single layer or the multilayer layer using the composition of claim 1.
청구항 1의 조성물을 사용하여, 상기 단일막 또는 상기 다층막을 식각하는 단계를 포함하는 금속 패턴의 형성 방법.
Forming a single film made of silver or a silver alloy, or a multilayer film made of the single film and a transparent conductive film, on a substrate; and
A method of forming a metal pattern comprising etching the single layer or the multilayer layer using the composition of claim 1.
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