TW202111255A - Light emitting module and manufacturing method thereof - Google Patents

Abstract

The present invention provides a light emitting module and a manufacturing method thereof. The light emitting module includes a substrate, a plurality of LED chips, and a photoresist layer. The substrate has a die-bonding surface. The LED chips are mounted on the die-bonding surface of the substrate and are spaced apart from each other. A gap is formed between any two of the LED chips adjacent to each other. The top surfaces of the LED chips jointly form a top plane. The photoresist layer is formed on the die-bonding surface of the substrate, and the gaps are filled with the photoresist layer. The photoresist layer includes a top side.

Description

Light-emitting module and manufacturing method thereof

The invention relates to a light-emitting module, in particular to a light-emitting module that reduces light-emitting interference and a manufacturing method thereof.

The existing light-emitting modules are all packaged with transparent or semi-transparent materials. The purpose of using such materials is to protect the light-emitting elements and reduce the loss of light energy. However, it is still unavoidable that multiple light-emitting elements interfere with each other. Especially when light-emitting elements such as micro flip chip (Mini LED) or millimeter micro flip chip (Micro LED) are directly used as the light-emitting pixels of the display panel, how can the light-emitting elements avoid mutual interference? To effectively improve the overall color performance of the display panel, this related technology needs to be developed by the industry.

Therefore, the inventor believes that the above-mentioned shortcomings can be improved, and with great concentration of research and the application of scientific principles, we finally propose an invention with reasonable design and effective improvement of the above-mentioned shortcomings.

The technical problem to be solved by the present invention is to provide a light-emitting module and a manufacturing method thereof for the shortcomings of the prior art, which can effectively improve the possible defects of the existing light-emitting module.

The embodiment of the present invention discloses a method for manufacturing a light emitting module, including: implementing a die bonding step: mounting a plurality of light emitting diode wafers on a die bonding surface of a substrate at intervals; wherein any two adjacent ones A gap is formed between the light-emitting diode wafers, and the top surfaces of a plurality of the light-emitting diode wafers jointly form a top plane; a forming step is performed: a forming step is performed on the bonding surface of the substrate A light barrier layer, so that a plurality of the light-emitting diode wafers are all buried in the light barrier layer, and the gaps are filled with the light barrier layer; and a grinding step is performed: from the light barrier layer A top edge starts to grind the light blocking layer to form a polished top edge.

The embodiment of the present invention discloses a light-emitting module, which includes: a substrate including a die-bonding surface; a plurality of light-emitting diode chips mounted on the die-bonding surface of the substrate at intervals, wherein any adjacent ones A gap is formed between the two light-emitting diode wafers, and the top surfaces of a plurality of the light-emitting diode wafers together form a top plane; and a light blocking layer formed on the die-bonding layer of the substrate On the surface, and the gaps between the light-emitting diode wafers are filled with the light blocking layer, wherein the light blocking layer has a polished top edge.

In summary, in the light-emitting module and the manufacturing method thereof disclosed in the embodiments of the present invention, the gap between any two adjacent light-emitting diode chips is filled with the light blocking layer, and the light The barrier layer is polished until the top edge of the polishing is formed, so that the light generated by the plurality of light-emitting diode chips can only be irradiated in the direction of the top edge of the polishing, so that the plurality of light-emitting diode chips The light from each other does not interfere with each other, and if a plurality of the light-emitting diode chips are of different colors, the color contrast between different colors of the light-emitting module can be greatly improved.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

The following are specific examples to illustrate the implementation of the "light emitting module and the manufacturing method thereof" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual size, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

It should be understood that although terms such as "first", "second", and "third" may be used herein to describe various elements or signals, these elements or signals should not be limited by these terms. These terms are mainly used to distinguish one element from another, or one signal from another signal. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

[First Embodiment]

As shown in FIGS. 1 to 4A, which are the first embodiment of the present invention, this embodiment discloses a light-emitting module 100 and a manufacturing method thereof. In order to facilitate the understanding of the light-emitting module 100 of this embodiment, the light-emitting module 100 is described below. The manufacturing method of the group 100, and then further introduces the structure and connection relationship of each element of the light-emitting module 100.

It should be noted that the light-emitting module 100 of this embodiment is described as a direct lit/back lit light-emitting module.

This embodiment discloses a light-emitting module 100 and a manufacturing method thereof, and the light-emitting module 100 ensures that a plurality of light-emitting diode chips 2 with different colors do not interfere with each other through the light blocking layer 3, thereby greatly improving the light-emitting module The color contrast is 100, but the present invention is not limited to this. For example, in other embodiments not shown in the present invention, a plurality of the light-emitting diode chips 2 may also be used to emit light of the same color. To facilitate the understanding of this embodiment, the manufacturing method of the light-emitting module 100 will be described below, which includes a die bonding step, a forming step, and a grinding step.

Of course, any one of the above multiple steps can be omitted or replaced with a reasonable change according to the needs of the designer. It should be noted that, in order to facilitate the understanding of this embodiment, the drawings are illustrated with a partial plan view of the above-mentioned light-emitting module 100.

The die bonding step: as shown in FIGS. 1 and 2, a plurality of light-emitting diode chips 2 with different colors are mounted on a die bonding surface 11 of a substrate 1 at intervals; wherein any two adjacent ones A gap S is formed between each of the light-emitting diode chips 2, and the top surfaces 21 of a plurality of the light-emitting diode chips 2 collectively form a top plane L.

More specifically, the substrate 1 is a single-sided printed circuit board (PCB) in this embodiment, and the die-bonding surface 11 is formed on a single side of the substrate 1 for a plurality of the light emitting devices. The diode chip 2 is configured. However, the substrate 1 can actually meet the needs of the designer, and choose different types of substrates 1, such as a double-sided printed circuit board, a multilayer printed circuit board, or a polymer polymer board. Therefore, it is not limited to this embodiment. Load.

Furthermore, a plurality of the light-emitting diode chips 2 are arranged on the die bonding surface 11 (that is, on the single-sided side of the single-sided printed circuit board) at equal intervals from each other, so that any two phases The adjacent light emitting diode chips 2 have the gap S between them, and the distance of each gap S is the same in this embodiment, but the present invention is not limited to this. For example, in other embodiments not shown in the present invention, the gap S between any two adjacent light-emitting diode chips 2 may have a slightly different distance; The arrangement of the light-emitting diode chips 2 can also be adjusted and changed according to design requirements.

In addition, the size of the gap S is based on the principle that it cannot be recognized by ordinary human eyes with naked eyes. In this embodiment, it is preferably not greater than 500 micrometers (μm). The plurality of light-emitting diode chips 2 in this embodiment may be micro-flip-chip light-emitting diode chips (micro LED chips) or sub-millimeter micro-flip-chip light-emitting diode chips (mini LED chips). , But not limited to what is contained in this example.

The forming step: as shown in FIG. 3, a light blocking layer 3 is formed on the die bonding surface 11 of the substrate 1, so that a plurality of the light-emitting diode chips 2 are all buried in the light In the barrier layer 3, and each of the gaps S is filled with the light barrier layer 3, the filling not only means completely filling the gap S, but also includes providing the light barrier layer 3 in the gap S , And the width of the light blocking layer 3 is sufficient to block light penetration.

In detail, the light barrier layer 3 is uniformly coated on the die-bonding surface 11 in this embodiment, so that the light barrier layer 3 fills each gap S, and completely separates a plurality of The light-emitting diode chip 2 is covered until the light generated by a plurality of the light-emitting diode chips 2 cannot directly penetrate the light blocking layer 3, where the light blocking layer 3 is in this embodiment Black matrix photoresist (BM), but is not limited to what is contained in this embodiment.

The grinding step: as shown in FIGS. 3 and 4A, the light barrier layer 3 is ground from a top edge 31 of the light barrier layer 3 to form a polished top edge 32 (as shown in FIG. 4A). That is to say, on one side of the bonding surface 11 (such as the top side of FIG. 4A), the light barrier layer 3 is polished and thinned until the top plane L (that is, a plurality of the light-emitting The top surface 21) of the diode wafer 2 stops at a predetermined distance D above, so that the top edge 31 of the light blocking layer 3 is polished to form the polished top edge 32. Wherein, the grinding top edge 32 and the top plane L are parallel to each other, the distance between the two is the predetermined distance D, and the predetermined distance D is preferably not more than 30 microns, and a plurality of the The light emitting diode wafer 2 is located below the polished top edge 32 (that is, located in the light blocking layer 3).

It should be noted that when the distance between the polished top edge 32 of the light blocking layer 3 and the top plane L is less than 30 microns, the light generated by the multiple light-emitting diode chips 2 The light blocking layer 3 can be directly penetrated by the polished top edge 32, and the periphery of the plurality of light-emitting diode chips 2 is surrounded by the light blocking layer 3, so that the plurality of light-emitting diodes The light generated by the bulk chip 2 can only be irradiated by its top surface 21 (the top plane L), so as to ensure that the light between the multiple light-emitting diode chips 2 does not interfere with each other. Of course, the light blocking layer 3 If the material of the light barrier layer 3 is easily penetrated by light, the size of the predetermined distance D is relatively large; on the contrary, if it is not easily penetrated, then The size of the predetermined distance D is relatively small.

The foregoing is the description of the manufacturing method of the light-emitting module 100 of the first embodiment, and the following describes a light-emitting module 100 manufactured by the above-mentioned manufacturing method of the light-emitting module 100, but the present invention is not limited to this. In other words, the light emitting module 100 of the first embodiment can also be manufactured by other manufacturing methods.

As shown in FIG. 4A, the light-emitting module 100 includes a substrate 1, a plurality of light-emitting diode chips 2, and a light blocking layer 3. Wherein, a plurality of the light-emitting diode chips 2 are arranged on the substrate 1, and the light blocking layer 3 covers the plurality of the light-emitting diode chips 2 and is located on the substrate 1. The following further introduces the structure and connection relationship of each element of the light-emitting module 100.

The substrate 1 is a single-sided printed circuit board in this embodiment, but the present invention is not limited to this. The substrate 1 is in the shape of a plate and has a die-bonding surface 11, and a plurality of the light-emitting diode chips 2 are arranged on the die-bonding surface 11, and the multiple light-emitting diode chips 2 are arranged in this In the embodiment, it is a micro-flip-chip light-emitting diode chip (micro LED chip), and a plurality of the light-emitting diode chips 2 are arranged in an evenly spaced arrangement, so that any two adjacent light-emitting diodes 2 A gap S is formed between the polar body chips 2, the distance of each gap S is not greater than 500 μm and all are equal, and the top surfaces 21 of the plurality of light emitting diode chips 2 collectively form a top plane L.

Of course, the substrate 1 and the plurality of light-emitting diode chips 2 can be adjusted according to the needs of the designer; for example, the substrate 1 can be a double-sided printed circuit board, a multilayer printed circuit board, or a polymer board Etc., the light-emitting diode chip 2 can also be a millimeter micro flip chip light-emitting diode chip (mini LED chip), or the light emitted by multiple light-emitting diode chips 2 can adopt the same color system or different colors. Color system, but not limited to those contained in this embodiment.

The light blocking layer 3 is a black matrix photoresist in this embodiment, but it is not limited to that described in this embodiment. The light blocking layer 3 is located on the die bonding surface 11 and covers a plurality of the light-emitting diode chips 2 to fill the gap S between the plurality of light-emitting diode chips 2, wherein , The light blocking layer 3 has a top edge 31 formed on the side away from the bonding surface 11, and a grinding operation is performed on the top edge 31, so that the light blocking layer 3 is formed with a grinding top edge 32 , And the grinding top edge 32 is separated from the top plane L by a predetermined distance D, so that a plurality of the light-emitting diode chips 2 are buried in the light blocking layer 3, and the predetermined distance D It is preferably no more than 30 microns.

Specifically, the top edge 31 of the light blocking layer 3 is polished by the polishing operation, so that the top edge 31 is polished, thinned, and partially removed to form the polished top edge 32, and the polished top edge 32 is flat and parallel to the top plane L formed by the plurality of light-emitting diode chips 2. There is the predetermined distance D between the polished top edge 32 and the top plane L, so that a plurality of the light-emitting diode wafers 2 are located below the polished top edge 32 of FIG. 4A, that is, a plurality of The light emitting diode chip 2 is covered by the light blocking layer 3. Wherein, the grinding operation can be performed in a physical or chemical manner according to the use requirements of the designer, but it is not limited to what is described in this embodiment.

It should be noted that the predetermined distance D is less than 30 microns, so that the light blocking layer 3 located between the polished top edge 32 and the top plane L can be covered by a plurality of the light emitting diodes and chips. The generated light penetrates, and the periphery of the plurality of light-emitting diode chips 2 is surrounded by the light blocking layer 3, so that the light generated by the plurality of light-emitting diode chips 2 can only pass through the top of the light-emitting diode chips 2 The surface 21 (the top plane L) is illuminated to ensure that the light between the plurality of light-emitting diode chips 2 does not interfere with each other.

[Second Embodiment]

As shown in Figures 1 to 3 and Figure 4B, it is the second embodiment of the present invention. This embodiment is similar to the above-mentioned first embodiment. The similarities between the two embodiments will not be repeated here. Compared with the above-mentioned first embodiment, the main difference lies in the grinding step; that is, the first embodiment and the second embodiment mainly differ in the degree of grinding and thinning.

The grinding step: as shown in FIG. 4B, the top edge 31 of the light barrier layer 3 (as shown in FIG. 3) before grinding is ground to a level equal to or lower than the top plane L Stop at a predetermined distance D, and the predetermined distance D is not greater than 30 microns.

In detail, a plurality of the light-emitting diode chips 2 in this embodiment selects light-emitting elements with abradable materials (for example, micro-flip-chip light-emitting diode chips with sapphire ends). In other words, the abrasive material of the light-emitting diode wafer 2 is located at the top end, and its thickness is greater than 30 microns.

In the grinding step, the photo-blocking layer 3 is polished from the direction toward the die-bonding surface 11, so that the top edge 31 of the photo-blocking layer 3 is polished and thinned to remove local materials. And the grinding top edge 32 is formed until the grinding top edge 32 is coplanar with the top plane L. At this time, the grinding operation can be stopped, or the predetermined grinding operation can be continued in the direction of the bonding surface 11. After the distance D, the grinding is stopped, and a plurality of the light-emitting diode wafers 2 are exposed. That is, when the grinding top edge 32 is coplanar with the top plane L, the grinding and thinning are continued, so that the ends (sapphire) of the plurality of light-emitting diode wafers 2 are ground down the predetermined distance D, to ensure that a plurality of the light-emitting diode chips 2 and the light blocking layer 3 together form a smooth surface.

To put it another way, when the light barrier layer 3 is polished so that the polished top edge 32 and the top plane L are coplanar, the gap S between the multiple light-emitting diode wafers 2 will still be affected. The light blocking layer 3 is filled to form a plurality of blocking portions 33, and the plurality of blocking portions 33 are upright and located around each of the light-emitting diode chips 2, and the plurality of blocking portions 33 block each The lateral light of each light-emitting diode chip 2 so that each light-emitting diode chip 2 can only emit light from its top surface 21, so as to ensure the light between the plurality of light-emitting diode chips 2 Do not interfere with each other. Moreover, when the top edge 32 is coplanar with the top plane L, the polishing operation can still be continued, and a plurality of the light-emitting diode wafers 2 and the light blocking layer 3 can be polished at the same time. The top surface 21 of each of the light-emitting diode wafers 2 is polished to form the polishing surface 211, and the polishing surface 211 and the polishing top edge 32 are coplanar.

The foregoing is the description of the manufacturing method of the light-emitting module 200 of the second embodiment. The following describes a light-emitting module 200 manufactured by the above-mentioned manufacturing method of the light-emitting module 200, but the present invention is not limited to this. In other words, the light emitting module 200 of the second embodiment can also be manufactured by other manufacturing methods. Furthermore, the light-emitting module 200 of this embodiment is similar to the light-emitting module 100 of the above-mentioned first embodiment, and the similarities between the two embodiments will not be repeated. However, this embodiment is compared with the above-mentioned first embodiment. The main differences of the light-emitting module 100 are:

A grinding operation is performed on the top edge 31 of the light blocking layer 3 to form a grinding top edge 32, and after the grinding operation, the top surfaces 21 ( Or the grinding surface 211) is exposed and coplanar on the grinding top edge 32.

In more detail, the photo-blocking layer 3 is polished toward the die-bonding surface 11, so that the photo-blocking layer 3 forms the polished top edge 32 and reaches a plurality of the light-emitting diode wafers. When the top surface 21 of 2 is exposed and polished, the top surface 21 is formed with a polishing surface 211, and a plurality of the polishing surfaces 211 and the polishing top edge 32 are flush and coplanar. The gap S between the diode chips 2 will still be filled by the light blocking layer 3 to form a plurality of blocking portions 33, and the plurality of blocking portions 33 are located between the plurality of light emitting diode chips 2. And block the light emitted from the side of each of the light-emitting diode chips 2 so that multiple light-emitting diode chips 2 can only emit light directly from the grinding surface 211, so as to ensure that multiple light-emitting diode chips 2 can only emit light directly from the grinding surface 211. The light between the light-emitting diode chips 2 does not interfere with each other.

[Technical Effects of Embodiments of the Invention]

In summary, the light-emitting module 100 and the manufacturing method thereof disclosed in the embodiment of the present invention are filled in the gap S between any two adjacent light-emitting diode chips 2 through the above-mentioned light blocking layer 3, and The light barrier layer 3 is polished until the polished top edge 32 is formed, so that the light generated by the plurality of light-emitting diode wafers 2 can only be irradiated in the direction of the polished top edge 32, so that more The light of the two light-emitting diode chips 2 does not interfere with each other, thereby greatly improving the color contrast between different colors of the light-emitting module 100.

The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

100, 200: light-emitting module 1: substrate 11: solid crystal surface 2: LED chip 21: top surface 211: Grinding surface 3: Light barrier layer 31: top edge 32: Grind the top edge 33: Barrier D: predetermined distance L: top plane S: gap

FIG. 1 is a schematic diagram of the crystal bonding step in the first embodiment of the present invention.

FIG. 2 is a schematic diagram after the crystal bonding step of the first embodiment of the present invention.

Fig. 3 is a schematic diagram after the forming step of the first embodiment of the present invention.

4A is a schematic diagram after the grinding step of the first embodiment of the present invention.

4B is a schematic diagram of the second embodiment of the present invention after the grinding step.

100: Light-emitting module

1: substrate

11: solid crystal surface

2: LED chip

21: top surface

3: Light barrier layer

32: Grind the top edge

D: predetermined distance

L: top plane

Claims (10)

A method for manufacturing a light-emitting module includes: Implement a die bonding step: mount a plurality of light emitting diode wafers on a die bonding surface of a substrate at intervals; wherein a gap is formed between any two adjacent light emitting diode wafers, and more The top surfaces of the light-emitting diode chips together form a top plane; A forming step is performed: a light barrier layer is formed on the die bonding surface of the substrate, so that a plurality of the light-emitting diode chips are all buried in the light barrier layer, and the gaps are filled. The light barrier layer; and A grinding step is performed: the light barrier layer is ground from a top edge of the light barrier layer to form a polished top edge. The method for manufacturing a light-emitting module according to claim 1, wherein the grinding step is stopped at a predetermined distance from the grinding top edge to above the top plane, so that a plurality of the light-emitting diodes Bulk wafers are all buried in the light barrier layer; wherein, the predetermined distance is not greater than 30 micrometers (μm). The method for manufacturing a light-emitting module according to claim 1, wherein the grinding step is stopped when the top edge of the grinding is higher than the top plane or lower than the top plane by a predetermined distance, and the predetermined The distance is not more than 30 microns. The method for manufacturing a light-emitting module according to claim 1, wherein, in the die bonding step, the gap is not greater than 500 micrometers. The method of manufacturing a light-emitting module according to claim 1, wherein the plurality of light-emitting diode chips are selected from a micro LED chip (micro LED chip) or a sub-millimeter micro-flip chip light-emitting diode. Polar body chip (mini LED chip). A light-emitting module includes: A substrate including a solid crystal surface; A plurality of light-emitting diode chips are mounted on the bonding surface of the substrate at intervals, wherein a gap is formed between any two adjacent light-emitting diode chips, and a plurality of the light-emitting diode chips The top surfaces of the diode chips together form a top plane; and A light blocking layer is formed on the bonding surface of the substrate, and the gaps between a plurality of the light-emitting diode wafers are filled with the light blocking layer, wherein the light blocking layer has a Grind the top edge. The light-emitting module according to claim 6, wherein the light blocking layer has a top edge, and a grinding operation is performed on the light blocking layer from the top edge to form the polished top edge, so that The grinding top edge is separated from the top plane by a predetermined distance, and the predetermined distance after grinding does not exceed 30 microns, and a plurality of the light-emitting diode wafers are embedded in the light blocking layer. The light-emitting module according to claim 6, wherein the light blocking layer has a top edge, and a grinding operation is performed on the light blocking layer from the top edge to form the polished top edge, and After the polishing operation, the top surfaces of the plurality of light-emitting diode wafers are exposed and coplanar on the top edge of the polishing. The light-emitting module according to claim 8, wherein the top surface of each light-emitting diode chip is subjected to the grinding operation to form a grinding surface, and is coplanar on the grinding top edge. The light-emitting module according to claim 6, wherein the gap is not greater than 500 microns.

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