TW202109653A - 研磨墊、研磨裝置、使用了該研磨裝置之研磨方法、及研磨墊的製造方法 - Google Patents

研磨墊、研磨裝置、使用了該研磨裝置之研磨方法、及研磨墊的製造方法 Download PDF

Info

Publication number
TW202109653A
TW202109653A TW109115833A TW109115833A TW202109653A TW 202109653 A TW202109653 A TW 202109653A TW 109115833 A TW109115833 A TW 109115833A TW 109115833 A TW109115833 A TW 109115833A TW 202109653 A TW202109653 A TW 202109653A
Authority
TW
Taiwan
Prior art keywords
polishing
polishing pad
semiconductor silicon
silicon wafer
area
Prior art date
Application number
TW109115833A
Other languages
English (en)
Chinese (zh)
Inventor
佐藤一彌
志摩直
岳田考司
Original Assignee
日商信越半導體股份有限公司
日商霓塔杜邦股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商信越半導體股份有限公司, 日商霓塔杜邦股份有限公司 filed Critical 日商信越半導體股份有限公司
Publication of TW202109653A publication Critical patent/TW202109653A/zh

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW109115833A 2019-07-04 2020-05-13 研磨墊、研磨裝置、使用了該研磨裝置之研磨方法、及研磨墊的製造方法 TW202109653A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019125463A JP2021012922A (ja) 2019-07-04 2019-07-04 研磨パッド、研磨装置、それを用いた研磨方法、及び、研磨パッドの製造方法
JP2019-125463 2019-07-04

Publications (1)

Publication Number Publication Date
TW202109653A true TW202109653A (zh) 2021-03-01

Family

ID=74100998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109115833A TW202109653A (zh) 2019-07-04 2020-05-13 研磨墊、研磨裝置、使用了該研磨裝置之研磨方法、及研磨墊的製造方法

Country Status (3)

Country Link
JP (1) JP2021012922A (ja)
TW (1) TW202109653A (ja)
WO (1) WO2021002089A1 (ja)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3779104B2 (ja) * 1998-12-28 2006-05-24 株式会社Sumco ウェーハ研磨装置
JP2006068888A (ja) * 2004-09-06 2006-03-16 Speedfam Co Ltd 定盤の製造方法及び平面研磨装置

Also Published As

Publication number Publication date
JP2021012922A (ja) 2021-02-04
WO2021002089A1 (ja) 2021-01-07

Similar Documents

Publication Publication Date Title
JP5233888B2 (ja) 両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法
KR101565026B1 (ko) 양면 연마 장치용 캐리어 및 이를 이용한 양면 연마 장치, 및 양면 연마 방법
KR102024130B1 (ko) 웨이퍼 연마 장치 및 이것에 이용하는 연마 헤드
WO2012147279A1 (ja) 半導体ウェーハ及びその製造方法
KR20090029270A (ko) 양면 연마 장치용 캐리어 및 이를 이용한 양면 연마 장치 및 양면 연마 방법
WO2020137186A1 (ja) ウェーハの製造方法およびウェーハ
WO2013080453A1 (ja) 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法
TWI804554B (zh) 載體的製造方法及晶圓的雙面研磨方法
KR102112535B1 (ko) 연마용 발포 우레탄 패드의 드레싱 장치
JP5145131B2 (ja) 研磨ヘッドの製造方法
JP2007173815A (ja) シリコンウエハ研磨装置、これに使用されるリテーニングアセンブリ及びシリコンウエハ平坦度補正方法
CN109414799B (zh) 双面研磨装置
TW202109653A (zh) 研磨墊、研磨裝置、使用了該研磨裝置之研磨方法、及研磨墊的製造方法
JP5605260B2 (ja) インサート材及び両面研磨装置
JP2021132102A (ja) 半導体ウェーハの製造方法
JP2011031322A (ja) 研磨装置及び研磨方法
JP5396616B2 (ja) シーズニングプレート、半導体研磨装置、研磨パッドのシーズニング方法
JP2016159384A (ja) 研磨装置及び研磨方法
JP2004241723A (ja) 半導体ウエーハの製造方法、サポートリング及びサポートリング付ウエーハ
JP7276246B2 (ja) 両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法
JP2013094925A (ja) 修正キャリア及び研磨装置
JP2003273050A (ja) 研磨装置
JP2002052460A (ja) ウェーハの加工方法及び加工装置