TW202108778A - SnZn SOLDER AND MANUFACTURING METHOD THEREOF - Google Patents

Abstract

The present invention relates to a SnZn solder and a manufacturing method thereof. The purpose is to provide a solder that is extremely strong with respect to electrodes of solar cell substrates and the likes, and can withstand repeated high and low temperature tests for many times, such that even if there is mixing in the solder, the melting temperature is about the same or lower. In addition, the solder is cheap. The present invention is constituted by mixing a main material containing at least one of P, In, Bi, and Sb into a base material of an alloy of Sn and Zn at a total amount of 1 to 1.5 wt% or less, and then melting and alloying them.

Description

SnZn solder and its manufacturing method

The present invention relates to SnZn solder used in solar cell substrates, liquid crystal substrates, etc., and its manufacturing method.

In the past, tin-lead solder has been used in large quantities for soldering wires of electrodes such as solar cell substrates and liquid crystal substrates due to its strong strength and low cost.

Furthermore, when the electrode is aluminum or the like, since sufficient soldering strength cannot be obtained, silver paste is applied and sintered, and a lead wire is soldered with tin-lead solder on it.

In addition, the demand for lead-free solder is gradually increasing due to the viewpoint of pollution.

Compared with tin-lead solder, the conventional lead-free solder has the problems that the strength is slightly insufficient relative to the required strength, or the price is higher and cannot be used instead.

The inventors of this case found that SnZn solder composed of an alloy of Sn and Zn, which is a kind of lead-free solder, was mixed with a trace amount of P, In, Bi, Sb, etc., which is a total of 1 to 1.5wt% or less, and was melted and alloyed. , And according to the needs, it is mixed with a small amount of Al, Si, Ag, Cu, Ni and other auxiliary materials and melted and alloyed to form SnZn solder. It is extremely strong for the electrodes of solar cell substrates and can withstand repeated high and low temperatures. Tested, and even if other ingredients are mixed in, the melting temperature of SnZn solder is about the same or lower.

Therefore, the present invention is a SnZn solder, which is composed of an alloy of Sn and Zn, wherein the base material of the alloy of Sn and Zn is mixed with a total of 1 to 1.5 wt% or less containing one of P, In, Bi, and Sb The above main materials are melted and alloyed.

At this time, the melting temperature of the SnZn solder after melting and alloying is the same as or lower than the melting temperature of the base material.

In addition, the main material is alloyed in the skeleton of the alloy of Sn and Zn.

In addition, according to requirements, the base material is mixed with at least 5wt% of Al, Si, Cu, Ag, Ni or a glass containing at least one of Al, Si, Cu, Ag, and Ni as a secondary material. It is made by melting and alloying.

Furthermore, for the main material and the auxiliary material, the alloy of the main material and the auxiliary material is mixed into the base material, and is melted and alloyed.

In addition, for the alloy of the main material and the auxiliary material, an alloy of Cu and P is used.

Furthermore, the base material, the main material, and the secondary material are mixed simultaneously or divided into multiple times, and are melted and alloyed.

In addition, SnZn solder is used for soldering wires to the electrodes of solar cell substrates and liquid crystal substrates.

Furthermore, in the manufactured SnZn solder, ammonium chloride hydrate powder or powder containing ammonium chloride hydrate below 3wt% and 0.05wt% or more is mixed to decompose during soldering heating to improve the resistance to the object to be welded. The welding tightness.

As described above, the present invention is based on the fact that the base material of the alloy of Sn and Zn is mixed with a trace amount of 1 to 1.5wt% or less of the main material containing more than one of P, In, Bi, Sb, etc., and a trace amount is mixed according to the requirements. One or more of Al, Si, Cu, Ag, Ni, etc. or a sub-material of glass containing more than one of Al, Si, Cu, Ag, Ni, and melted and alloyed to become a substrate for solar cells SnZn solder is a solder that is extremely strong and can withstand repeated high and low temperature tests. Even if it is mixed with other components, the melting temperature of SnZn solder is about the same or lower, making it more cost-effective to manufacture.

Furthermore, the melting temperature of the SnZn solder after melting and alloying is the same as or lower than the melting temperature of the base material, which can eliminate the increase in melting temperature caused by mixing.

Furthermore, the main material is alloyed in the framework of the alloy of Sn and Zn, so that undesired precipitation defects can be eliminated.

Furthermore, by mixing one or more of Al, Si, Cu, Ag, Ni, etc., or glass containing more than one of Al, Si, Cu, Ag, Ni, and melting and alloying to produce SnZn solder, Improve the electrical characteristics such as the contact potential of the welding object.

Furthermore, by mixing the alloys of the main material and the sub-materials and melting and alloying them to produce SnZn solder, the main material can be stabilized, and it can become a solder that can withstand repeated high and low temperature tests many times.

In addition, mixing ammonium chloride hydrate powder or powder containing ammonium chloride hydrate below 3wt% and 0.05wt% or more into the manufactured SnZn solder can be decomposed during soldering heating to improve the performance of the soldering object. Welding tightness.

1: Solder material

2: The solder material is put into the dish

3: melting furnace

4: heater

11: Silicon substrate

12: Aluminum sintered film

13: Front end of ultrasonic soldering iron

13-1: The tip of the soldering iron

14: Solder

15: Belt piece, metal wire

S1, S2, S3, S4, S11, S12: steps

Fig. 1 is an explanatory diagram of the solder manufacturing of the present invention.

Fig. 2 is an explanatory diagram of the solder material manufacturing device of the present invention.

Fig. 3 is an explanatory diagram of welding of the lead wire of the present invention.

Fig. 4 is an explanatory diagram of welding of the present invention.

Figure 5 is an example of the composition of the solder of the present invention (ABS-S).

Fig. 6 is a trial example of the solder of the present invention.

Fig. 7 is an explanatory diagram of the TC test of the solder of the present invention.

Figure 8 is a TC test example of the solder (A-14) of the present invention.

Figure 9 is an example of ultrasonic (scratch)/paste of the present invention.

Fig. 1 is an explanatory diagram of the solder manufacturing of the present invention.

Fig. 1(a) shows the flow chart, and Fig. 1(b) shows examples of materials.

In Figure 1(a), step S1 is to prepare the base material, the main material, and the secondary material. This is to prepare the following materials shown in the material example of Fig. 1(b).

˙Base material: Sn91 Zn9

˙Main material: P, In, Bi, Sb

˙Sub-materials: Al, Si, Cu, Ag, Ni

Here, the base material is the basic material (base material) of the SnZn alloy forming the SnZn solder of the present invention. Here, 91wt% of Sn and 9wt% of Zn are used as sample materials. The weight ratio of Sn and Zn can be arbitrarily set within the range of alloys that can be made, for example, Zn can be 1 to 15 wt%, and the rest is Sn (the ratio can be appropriately selected and set according to experiments such as melting temperature).

Furthermore, the main material is a material that affects the removal of oxide film on the surface of the welding object, adhesion, wettability, fluidity, viscosity and other welding properties during welding. In the present invention, the total of the main material The amount is set to 1 to 1.5 wt% or less. Here, the main material is mixed with at least one of P (removal of the oxide film of the welding object, adhesion), In (wettability, fluidity), Bi (adhesion), and Sb (adhesion) and melted and alloyed The object material. Furthermore, since the main material is a trace amount of 1 to 1.5 wt% in total, compared to the melting temperature of the base material, the main material is mixed with the base material and melted, and the melting temperature of the alloyed SnZn solder is the same or Slightly lower (for example, lowered by 1 to 5°C). This is due to speculation that the total amount of the main material is 1 to 1.5 wt% or less relative to the base material, which enters the frame of the base material and reconstructs the frame.

In addition, the secondary material is further added to the base material and the main material to improve the electrical characteristics (contact potential difference) of the soldered objects (solar cell substrates, liquid crystal substrates and other semiconductor substrates, fired aluminum films, copper electrodes, etc.) , Contact resistance, IV characteristics of solar cells, etc.), adhesion, etc. become better, here are Al (compared to the material of the fired aluminum film), Si (compared to the material of the silicon substrate), Cu (compared to the copper electrode Materials), Ag (compared to materials in all cases), Ni (compared to materials when a small amount of Ni is plated on a silicon substrate) and other materials. As for the secondary materials, in addition to metals, they can also be added by mixing, melting, and alloying glass containing metals (gas components such as oxygen contained in the glass are released to the outside during melting and alloying, etc.).

Step S2 is to mix the main material and the auxiliary material with the base material. This is to mix the main material and the auxiliary material in the base material prepared in step S1.

In step S3, the base material, the main material, and the secondary material are melted and alloyed. This system heats and melts the mixture of the main material and the auxiliary material with the base material in step S2, and stirs them sufficiently to alloy them. At this time, when the main materials and auxiliary materials are oxidized by oxygen in the air and are difficult to alloy, you can blow inert gas (such as nitrogen) into the crucible as required, or use a melting furnace filled with inert gas, Vacuum furnace, etc.

Step S4 completes the solder material (ABS-S).

As described above, the base material, the main material, and the auxiliary material are prepared, and these are mixed and melted and alloyed, whereby the SnZn solder (ABS-S) of the present invention can be manufactured. The following is a detailed description in order.

Fig. 2 is an explanatory diagram showing the material manufacturing device of the present invention.

In FIG. 2, the solder material 1 is the base material, the main material, and the subsidiary material prepared in step S1 of FIG.

The solder material input pan 2 is the one that contains the solder material and puts it into the melting furnace 3.

The melting furnace 3 is heated by the heater 4, and when the solder material 1 is put inside, it is used to melt the base material, the main material, and the auxiliary material, and stir to alloy them. The melting furnace 3 usually melts and stirs the base material, main material, and subsidiary material put into the interior in the atmosphere to alloy them. At this time, inert gas (nitrogen, etc.) is blown in according to demand to reduce the oxidation caused by oxygen in the air, and furthermore, it is sealed and filled with inert gas (or vacuum exhaust) according to demand.

As described above, the base material, main material, and subsidiary material prepared in step S1 of FIG. 1 are mixed, melted in the melting furnace 3 and stirred to alloy, and the SnZn solder of the present invention can be manufactured.

Fig. 3 is an explanatory diagram showing the welding of the wire of the present invention.

Figure 3(a) shows a flowchart, and Figure 3(b) shows an example of a substrate/wire.

In FIG. 3(a), step S11 is to pre-soldering the solder to the substrate pattern by ultrasonic waves. This is, for example, the electrode of the solar cell substrate. For the part (pattern) to be soldered, the SnZn solder of the present invention (the SnZn solder manufactured in step S4 of FIG. 1) is supplied to the tip of the ultrasonic soldering iron and made It is melted and ultrasonic waves are applied, and the pattern part on the substrate is welded in advance (referred to as ultrasonic pre-welding).

Step S12 is to perform ultrasonic welding or non-ultrasonic welding on the wires and the like. This is to make the wire abut the part (pattern) that has been pre-soldered by ultrasonic waves on the electrodes of the solar cell substrate in step S11, and apply ultrasonic waves or no ultrasonic waves thereon, while making the SnZn solder of the present invention Melt and weld the wires. In addition, if SnZn solder is pre-soldered to the wire, there is no need to supply solder.

As described above, since it is difficult to perform normal soldering on the part to be soldered (for example, the battery part of the solar cell substrate), the pre-soldering of the SnZn solder of the present invention (step S11) is performed using ultrasonic waves, and the pre-soldering is performed. On the part (pattern), ultrasonic welding or non-ultrasonic welding is performed on the wire using the SnZn solder of the present invention (step S12), thereby, the electrode part of the solar cell substrate that cannot be soldered in the past can be subjected to ultrasonic pre-warning. Welding, and ultrasonic or non-ultrasonic welding is performed on the wires.

In addition, ultrasonic welding is 10W or less, usually 2 to 3W ultrasonic welding. If it is too strong, it will damage the film (for example, a nitride film) formed on the solar cell substrate, the crystals on the surface of the substrate, etc., so excessive ultrasonic welding is not performed.

Figure 3(b) shows an example of a substrate/wire.

In Fig. 3(b), the substrate is an Al, Si substrate, glass substrate, etc., and is an example of a substrate that is extremely difficult to solder with ordinary soldering. For the parts (patterns) that become the electrodes of these substrates, the present invention is Ultrasonic pre-soldering of SnZn solder. Then, the pre-welded part (pattern) is welded by ultrasonic welding or non-ultrasonic welding of the wire, whereby the wire can be welded to the substrate.

Furthermore, the wire is a wire that is soldered to the part (pattern) of the electrode on the substrate using the SnZn solder of the present invention, and is a metal wire (a metal wire formed by plating the SnZn solder of the present invention on a round copper wire, Slightly pressed into an ellipse for easy soldering), strips (for strips made by cutting a copper sheet into a width of about 1 mm, which are pre-plated with the SnZn solder of the present invention), etc.

Fig. 4 is an explanatory diagram of welding of the present invention.

Figure 4(a) shows an example of pre-welding, and Figure 4(b) shows an example of welding a strip or wire.

In FIG. 4(a), the silicon substrate 11 is an example of a solar cell substrate in this example, and an aluminum sintered film 12 is formed on the entire surface of the silicon substrate 11, for example, the back surface.

The aluminum sintered film 12 is an electrode (aluminum sintered film) formed by coating aluminum paste (or screen printing into a predetermined pattern) and sintering the entire back surface of the silicon substrate 11, which is a solar cell substrate. .

The tip 13 of the ultrasonic soldering iron is heated by applying ultrasonic waves from an ultrasonic generator (not shown).

The solder (ABS-S) 14 is the SnZn solder of the present invention (the SnZn solder manufactured in step S4 of FIG. 1).

Next, the welding operation will be described.

(1) The silicon substrate 11 is transported to a preheating stage, vacuum-adsorbed and fixed, and preheated (for example, preheated to about 180°C).

(2) For the electrode pattern (a long pattern) to be formed on the aluminum sintered film 12, from the start point to the end point, the solder 14 is automatically supplied to the tip 13 of the ultrasonic soldering iron shown in the figure and melted and the same Ultrasonic waves are applied at the same time, and the aluminum sintered film 12 is moved at a certain speed without scratching the aluminum sintered film 12 so as to be close, thereby forming a long pre-welded pattern on the aluminum sintered film 12.

As described above, the SnZn solder 14 of the present invention can be soldered on the aluminum sintered film 12 into a pre-soldering pattern of a predetermined pattern.

Figure 4(b) shows an example of welding a strip or wire.

In Fig. 4(b), the tip 13-1 of the soldering iron capable of applying ultrasonic waves is heated by applying ultrasonic waves to an ultrasonic generator (not shown), or heating without ultrasonic waves.

The strip or metal wire 15 with solder is formed by pre-welding the SnZn solder of the present invention to the strip or metal wire. In addition, if the metal wire 15 is slightly deformed into an ellipse, the weldability is relatively good.

Next, the welding operation of the strip or metal wire to the part of the pre-welded pattern will be described.

(1) As in FIG. 4(a), the silicon substrate 11 is preheated.

(2) For the solder-attached strip or metal wire 15 arranged along the pre-soldering pattern portion of the aluminum sintered film 12 formed on the silicon substrate 11 (back side), ultrasonic waves or no ultrasonic waves can be applied from above The tip 13-1 of the soldering iron is gently pressed and moved to the right of the figure at a certain speed at the same time, to melt the solder of the strip with solder or the wire 15 and solder it to the pre-soldering pattern part.

As described above, the strip or wire 15 pre-soldered with the SnZn solder of the present invention can be welded to the part of the pre-soldering pattern on the aluminum sintered film 12.

In addition, the ultrasonic welding and non-ultrasonic welding of the present invention are judged by ultrasonic welding or non-ultrasonic welding of the strip or metal wire to the welding target part, and the force is slightly stronger than that of the substrate. Pulling a strip or metal wire with a weak force will be judged as good when it does not peel off from the substrate, and judged as bad when it is peeled off from the substrate.

Figure 5 shows an example of the composition of the solder of the present invention (ABS-S).

In Fig. 5, the base material, main material, and auxiliary material are the differences between the base material, main material, and auxiliary material described in Fig. 1.

The composition example is the composition example of the base material, main material, and auxiliary material.

Examples of wt% are examples of wt% of the composition of the base material, main material, and secondary material.

The wt% range is an example of the wt% range of the composition of the base material, main material, and subsidiary material.

The composition, wt% example, and wt% range are as follows as shown in FIG. 5.

Here, as for the composition example, in the trial production, the base material is 91wt% of Sn and 9wt% of Zn as shown in the figure. Furthermore, the composition range should be the range that can produce SnZn and is stable, for example, it can be 1 to 15wt% of Zn, and the rest is Sn. The melting temperature of the SnZn base material produced is determined by experiment. That's it.

As far as the main material is concerned, although there are P, In, Bi, Sb, etc., P (red phosphorus) and CuP8 alloy are used in the trial production (P is 8wt%, the rest is an alloy of Cu, and the wt% of P is CuP8 8% of copper phosphide). In addition, when adding about 0.1wt% of P (P saturated state) and when adding P in CuP8 as the main material, it is necessary to add more to about 0.16wt% (P saturated state). P is saturated at about 0.1wt% (or about P=0.16wt% in the case of CuP8). If it is added further, it becomes supersaturated, and the viscosity of the SnZn solder will increase undesirably. Therefore, in order to ensure the fluidity and wettability that are commonly used, it is preferable to add P at a saturation level or lower. P can also be a very trace amount (a trace amount of about 0.001 wt%). Furthermore, P is saturated and oversatisfied And can also be used appropriately according to the purpose. Similarly, other main materials also have this tendency. Therefore, the optimal addition amount can be determined in experiments according to the needs.

Furthermore, the total amount of the main material is preferably 1 to 1.5 wt% or less. The SnZn solder of the present invention made by mixing the total amount of the main material 1 to 1.5wt% with the base material (Sn 91wt%, Zn 9wt%) and melting and alloying, the actual measured melting temperature is compared with that of the parent material The melting temperature of the material is the same or lowered by 1 to 5°C. It is speculated that the total amount of the main material 1 to 1.5wt% or less enters the inside of the skeleton of the base material (SnZn alloy) to reconstruct the skeleton, resulting in the same or lower melting temperature. In addition, a mesh-like skeleton appears during mixing, melting, and alloying in the crucible, and it has been observed that it becomes a consistent alloy when the whole is melted and melted by stirring, and the reason can be inferred from this.

Furthermore, since solar cell substrates, liquid crystal substrates, etc. are made of silicon, and there is an aluminum sintered film on the silicon, Si, Al, Cu (copper wire, copper pattern, etc.), Ag (sintered electrode), Ni (nickel plating on the surface of silicon) or the like is added to improve electrical characteristics (contact potential difference, contact resistance, IV characteristics of solar cells, etc.), bonding strength, and the like.

Fig. 6 shows a trial example of the solder of the present invention. The figure shows an example of most of the sample solders that can be used for the soldering shown in Fig. 4 already described. Users who are not able to omit the icon.

In FIG. 6, the base material of the SnZn solder of the present invention (SnZn solder manufactured in step S4 of FIG. 1) uses Sn 91wt% and Zn 9wt%.

Al and Si are used as auxiliary materials (others omitted).

The main materials of In, Bi, P (red phosphorus) are metal materials. CuP8 uses copper phosphide whose P is 8wt% and the rest is Cu. In addition, as mentioned above, when CuP8 is used, the amount of P added therein is not equivalent to 0.16wt% and it will not be saturated (P (red phosphorus) is saturated at 0.1wt%).

The sample number is the number of the sample to be tried.

Regarding the sample No. above, the ultrasonic welding and non-ultrasonic welding of Fig. 5 have been described, and only good solders are described. For solders that cannot be soldered, the description is omitted.

FIG. 7 is an explanatory diagram showing the TC test of the solder of the present invention. Here, the TC test uses the sample No. "A-14" in Fig. 6 which has already been described.

Figure 7(a) schematically shows a TC test example of ABS-S solder (A-14). So far, the TC test has exceeded 1,000 hours (and is ongoing).

Figure 7(b) shows an example of a sample photo. As shown in the figure, use A-14 to solder the copper wire to the aluminum plate, silicon surface, aluminum surface (ultrasonic welding, or apply scratches and solder).

Figure 7(c) shows the temperature conditions of the TC test. Here, as shown in the figure, the TC test was carried out under the following conditions.

˙Maximum temperature is 87.5℃

˙The minimum temperature is -24.4℃

˙Maximum humidity 98.3%

˙Minimum humidity 1.6%

Figure 7(d) shows an example of the test environment and results. Here, as shown in the figure,

(1) The test period is from May 1st to June 12th, 2019 (1000 hours)

(2) Join the copper wire to aluminum plate, silicon plate, and aluminum surface with solder A-14

(3) The high temperature condition is placed in the high temperature furnace at 80°C. The temperature is increased after the sample is placed.

(4) The low temperature condition is to put in the freezer at -20°C.

(5) The exchange system does not place the sample at room temperature and replace it immediately.

The test result is that the solder did not collapse without problems.

According to the result of 1000 hours of TC test carried out under the above test conditions, the result of the test is passed for sample No. "A-14".

Fig. 8 shows a TC test example of the solder (A-14) of the present invention.

In FIG. 8, the horizontal axis represents the elapsed time (h). The vertical axis represents temperature (°C)/humidity (%), the upper curve in the figure represents humidity, and the lower curve represents temperature.

In Figure 8, the temperature curve at the bottom of the figure is

˙High temperature (maximum temperature) is 87.6℃ as shown in Figure 7(c)

˙The low temperature (minimum temperature) is -24.4℃ as shown in Figure 7(c) , And display the records after 1000 hours.

In Figure 8, the humidity curve in the upper part of the figure is

˙Maximum humidity is 98.3% as shown in Figure 7(c)

˙The minimum humidity is 1.6% as shown in Figure 7(c) , And display the records after 1000 hours.

Figure 9 shows an example of ultrasonic (scratch)/paste of the present invention. Herein, in Figure 9:

˙"Paste/ultrasonic (scratch)" is the difference between "ultrasonic welding", "no ultrasonic and scratch the welding object with a soldering iron" when using the SnZn solder of the present invention to solder to the welding object. "Use Paste ammonium chloride (NH4Cl) hydrate (3wt% or less, 0.05wt% or more)", "Use paste ammonium chloride anhydrate (3wt% or less, 0.05wt% or more)", and " Use paste resin (rosin) (3wt% or less, 0.05wt% or more)".

˙The soldering object is the material of the object to be soldered using the SnZn solder of the present invention. The difference is Si (wafer, about 0.2mm thick), Al sintered film sintered on the wafer, Cu (0.1mm thick plate), Al (0.1mm thick plate), stainless steel (0.1mm thick plate).

之鍍錫線後拉扯時，若達矽晶圓斷裂之力(拉伸強度)，判定為密接優良)。 ˙◎It means that the SnZn solder of the present invention has excellent adhesion to the welding object (welding 0.4mm

When the tinned wire is pulled after it is pulled, if it reaches the breaking force (tensile strength) of the silicon wafer, it is judged as good adhesion).

之鍍錫線後拉扯時，若達矽晶圓斷裂之力或稍弱之力(拉伸強度)，判定為密接佳)。 ˙○ means that the SnZn solder of the present invention has good adhesion to the welding object (welding 0.4mm

When the tinned wire is pulled after it is pulled, if the silicon wafer breaks or is weaker (tensile strength), it is judged as good adhesion).

之鍍錫線後拉扯時，立即剝離之狀態)。 ˙△ means that the SnZn solder of the present invention has a weak adhesion to the welding object (welding 0.4mm

After the tinned wire is pulled, it will peel off immediately).

˙╳ means that the SnZn solder of the present invention has poor adhesion to the soldering object.

According to the experiment in Figure 9 above, it can be seen that in the case of "ultrasonic welding" and "no ultrasonic welding and scratching the welding object with a soldering iron", sufficient welding can be achieved for Si wafers, Al sintered films, Cu, Al, and stainless steel. strength.

Furthermore, when ammonium chloride hydrate (3 wt% or less, 0.05 wt% or more) is used, sufficient welding strength can be obtained for Cu and Al.

Furthermore, when resin (rosin) (3 wt% or less, 0.05 wt% or more) is used, sufficient welding strength can be obtained for Cu.

左右或一邊為1mm左右之角柱形之線狀焊料。該線狀焊料的剖面的中心附近可觀察到前述填入(混入)之粉末。然後，使烙鐵接觸於焊接對象(例如Cu板等，依需求載置於預加熱台(例如180℃))並進行加熱而使該線狀焊料熔融，將混入該線狀焊料之粉末(例如氯化銨水合物之粉 末)分解而嘗試大幅改善對於焊接對象的部分之密接性(例如，為Cu板之情形係大幅改善了密接性。參閱圖9)。 In addition, the SnZn solder of the present invention mixed with powder used in the experiment is to open a hole (about 1-3mm) in the center of the thick rod-shaped solder, or cut a notch, etc., and fill in the inside of the hole or the inside of the notch. Pour a predetermined amount of powder (such as ammonium chloride hydrate or resin powder), and stretch it into a thin rod by rolling (sub-groove) rolls several times, and finally process it into about 1mm

The left and right or one side is a linear solder with a corner column of about 1mm. The filler (mixed) powder was observed near the center of the cross section of the wire solder. Then, the soldering iron is brought into contact with the soldering object (e.g., Cu plate, etc., placed on a preheating stage (e.g., 180°C) as required) and heated to melt the wire solder, and mix the wire solder powder (such as chlorine) The powder of ammonium hydrate) decomposes to try to greatly improve the adhesion to the part to be welded (for example, in the case of a Cu plate, the adhesion is greatly improved. See Figure 9).

S1, S2, S3, S4: steps

Claims (17)

A SnZn solder consisting of an alloy of Sn and Zn, wherein the base material of the alloy of Sn and Zn is mixed with a total of 1 to 1.5 wt% or less of the main material containing one or more of P, In, Bi, and Sb, And it is made by melting and alloying. The SnZn solder according to claim 1, wherein the melting temperature of the SnZn solder after melting and alloying is the same as or lower than the melting temperature of the base material. The SnZn solder according to claim 1 or 2, wherein the main material is alloyed in a skeleton of an alloy of Sn and Zn. The SnZn solder according to any one of claims 1 to 3, wherein, according to requirements, 5wt% or less of Al, Si, Cu, Ag, Ni is mixed in the aforementioned base material or contains Al, Si, Cu , Ag, Ni and more than one kind of glass secondary material, and it is made by melting and alloying. The SnZn solder according to any one of claims 1 to 4, wherein, regarding the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material, and the base material is melted and alloyed . The SnZn solder according to claim 5, wherein an alloy of Cu and P is used for the alloy of the main material and the auxiliary material. The SnZn solder according to any one of claims 1 to 6, wherein the aforementioned base material, main material, and subsidiary material are mixed simultaneously or divided into multiple times, and are melted and alloyed. The SnZn solder described in any one of claims 1 to 7 is used for soldering wires to the electrodes of solar cell substrates and liquid crystal substrates. A kind of SnZn solder, in which the SnZn solder described in any one of claims 1 to 8 is mixed with ammonium chloride hydrate powder or powder containing ammonium chloride hydrate below 3wt% and 0.05wt% or more, so as to Decomposes during welding heating to improve welding adhesion to the welding object. A method for manufacturing SnZn solder, which is to manufacture SnZn solder composed of an alloy of Sn and Zn. The manufacturing method is to mix the base material of the alloy of Sn and Zn with a total of 1 to 1.5wt% or less containing P, In, Bi, One or more of the main materials of Sb are melted and alloyed to be manufactured. The method for producing SnZn solder according to claim 10, wherein the melting temperature of the SnZn solder after melting and alloying is the same as or lower than the melting temperature of the base material. The method of manufacturing a SnZn solder according to claim 10 or 11, wherein the main material is alloyed in a skeleton of an alloy of Sn and Zn. The manufacturing method of SnZn solder according to any one of claims 10 to 12, wherein, according to requirements, at least one of Al, Si, Cu, Ag, Ni is mixed with 5wt% or less of Al, Si, Cu, Ag, Ni or Al, One or more sub-materials of glass among Si, Cu, Ag, and Ni, and are melted and alloyed. The manufacturing method of SnZn solder according to any one of claims 10 to 13, wherein, regarding the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material and melted , Alloying. The method for producing SnZn solder according to claim 14, wherein the alloy of the main material and the sub material is an alloy of Cu and P. The manufacturing method of SnZn solder according to any one of claims 10 to 15, wherein the base material, the main material, and the auxiliary material are mixed simultaneously or divided into multiple times, and are melted and alloyed. A manufacturing method of SnZn solder, which is mixed with powder of ammonium chloride hydrate or powder containing ammonium chloride hydrate of less than 3wt% and more than 0.05wt% of SnZn solder according to any one of claims 10 to 16 , To decompose during welding heating to improve the welding adhesion to the welding object.

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