KR20220013497A - SnZn solder and its manufacturing method - Google Patents

Abstract

According to the present invention, 1 to 1.5 wt% or less of the main material containing at least one of P, In, Bi, and Sb is mixed in a base material, which is an alloy of Sn and Zn, in a total amount of 1 to 1.5 wt% or less to melt/alloy SnZn solder and It relates to a manufacturing method thereof. According to the present invention, it is possible to provide an inexpensive solder that can be very firmly bonded to an electrode such as a solar cell substrate, is strong in high and low temperature repeated tests, and has a melting temperature that is substantially the same as or lower than that of the SnZn alloy as a base material. can

Description

SnZn solder and its manufacturing method

The present invention relates to an SnZn solder used for a solar cell substrate, a liquid crystal substrate, etc. and a method for manufacturing the same.

Conventionally, in soldering a lead wire to an electrode such as a solar cell substrate or a liquid crystal substrate, tin solder is more widely used for reasons such as strong strength and low price.

In the case of electrodes such as aluminum, since sufficient soldering strength was not obtained, silver paste was applied and sintered, and lead wires were soldered thereon with tin solder.

In addition, these days, the demand for lead-free solder is increasing from the viewpoint of pollution and the like.

Conventional lead-free solder has problems in that the strength is slightly insufficient to the required strength compared to tin solder, or that it cannot be used as a substitute because of its high price.

The present inventors have found that with respect to SnZn solder made of an alloy of Sn and Zn, which is one type of lead-free solder, a minor amount of 1 to 1.5 wt% or less in total of main materials such as P, In, Bi, and Sb is mixed and melted. SnZn solder, which is alloyed and melted and alloyed by mixing small amounts of sub-materials such as A1, Sq, Ag, Cu, and Ni, if necessary, is very strong for electrodes such as solar cell substrates, and is very strong in high-temperature and low-temperature repeated testing. It was found that the melting temperature of the SnZn solder was almost the same or lowered even when it was mixed as a strong solder.

Therefore, in the present invention, in the SnZn solder made of an alloy of Sn and Zn, a main material containing at least one of P, In, Bi, and Sb in a base material that is an alloy of Sn and Zn is added in a total of 1 to It is designed to be melted and alloyed by mixing 1.5 wt% or less.

At this time, the melting temperature of the SnZn solder after melting and alloying is equal to or lower than the melting temperature of the base material.

In addition, the main material is alloyed within the skeleton of an alloy of Sn and Zn.

In addition, one or more of A1, Sa, Cu, Ag, and Ni, or an auxiliary material containing glass containing one or more, 5 wt% or less is mixed into the base material as necessary to be melted and alloyed.

In addition, as the main material and the auxiliary material, the alloy of the main material and the auxiliary material is mixed into the base material to be melted and alloyed.

Moreover, as an alloy of a main material and a subsidiary material, it is an alloy of Cu and P.

In addition, the base material, main material, and auxiliary material are mixed at once or divided into a plurality of materials to be melted and alloyed.

In addition, the solder of the lead wire is used for the electrode of the solar cell substrate and the liquid crystal substrate.

In addition, 3 wt% or less to 0.05 wt% or more of ammonium chloride/hydrate powder or ammonium chloride/hydrate-containing powder is mixed into the generated SnZn solder, and it decomposes during soldering heating and solders to the object to be soldered. To improve adhesion.

In the present invention, as described above, in the base material, which is an alloy of Sn and Zn, a trace amount of 1 to 1.5 wt% or less in total of a main material containing at least one of P, In, Bi, Sb, etc., if necessary, A1, Sa , Cu, Ag, Ni, etc., by mixing a small amount of an auxiliary material containing one or more or a glass containing one or more and melting and alloying it, a solder that is very strong for electrodes such as solar cell substrates and has strong resistance to high-temperature and low-temperature repeated tests As a result, even when mixed, the melting temperature of the SnZn solder was substantially the same or lowered, making it possible to manufacture more inexpensively.

In addition, the melting temperature of the SnZn solder after melting and alloying was the same as or lower than the melting temperature of the base material, so that it was possible to prevent an increase in the melting temperature due to mixing.

In addition, the main material was alloyed in the skeleton of the Sn and Zn alloy, and it was possible to eliminate the harmful effects of precipitation.

In addition, by mixing one or more or glass containing one or more of A1, Sc, Cu, Ag, Ni, etc., melting and alloying, and manufacturing SnZn solder, electrical characteristics can be improved.

In addition, by mixing the alloy of the main and sub-materials and melting and alloying them to produce SnZn solder, the main material was stabilized and the solder resistant to high-temperature and low-temperature repeated tests was made.

In addition, 3 wt% or less to 0.05 wt% or more of ammonium chloride/hydrate powder or powder containing ammonium chloride/hydrate is mixed into the generated SnZn solder, and it is decomposed during brazing heating to improve solder adhesion to the object to be soldered. can do.

[Fig. 1] It is an explanatory drawing of solder manufacturing of the present invention.
[Fig. 2] It is explanatory drawing of the soldering material manufacturing apparatus of this invention.
[Fig. 3] It is an explanatory diagram of soldering of the lead connection of the present invention.
Fig. 4 is an explanatory diagram of soldering according to the present invention.
[Fig. 5] A composition example (ABS-S) of the solder of the present invention.
[Fig. 6] A prototype of the solder of the present invention.
[Fig. 7] It is an explanatory drawing of TTC test of the solder of the present invention.
[Fig. 8] A TTC test example of the solder (A-14) of the present invention.
[Figure 9] An example of ultrasonic (rubbing)/paste of the present invention.

Example 1

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a solder manufacturing explanatory diagram of the present invention.

Fig. 1 (a) shows a flow chart, and Fig. 1 (b) shows an example of a material.

In Fig. 1 (a), in S1, a base material, a main material, and a sub material are prepared. This prepares the following materials shown in the material example of Fig. 1(b).

·Material: Sn91, Zn9

·Main material: P, Ip, Bi, Sb

Sub-materials: A1, Sｉ, Cu, Ag, Ni

Here, the base material is the basic material (base material) of the SnZn alloy forming the SnZn solder of the present invention. Here, 91 p% Sn and 9 p% Zn were used in the prototype. The weight ratio of Sn and Zn may be arbitrarily within the range that can form an alloy, for example, Zn is 1 to 15 g %, and the rest is Sn. good).

In addition, the main material is a material that affects the soldering in terms of removal of the oxide film on the surface to be soldered, adhesion, wettability, fluidity, viscosity, etc. during soldering. In the present invention, the total amount of the main material is 1 to 1.5 wt% or less It is a material made of Here, one or more of P (removal of the oxide film of the object to be soldered, adhesion), In (wettability, fluidity), Bi (adhesiveness), and Sb (adhesion) are mixed to form a material to be melted and alloyed. In addition, the main material has a trace amount of 1 to 1.5 wt% or less, and the melting temperature of the SnZn solder after melting and alloying by mixing the main material with the base material is the same or slightly lower than the melting temperature of the base material (for example, 1 to 5°C lower). This is a trace amount of 1 to 1.5 wt% or less of the total amount of the main material, and it is estimated that it enters into the skeleton of the base material and constitutes a re-skeleton.

In addition, the sub material is a material added to the base material and the main material, and the electrical characteristics (contact potential difference, contact resistance, etc.) of the object to be soldered (semiconductor substrates such as solar cell substrates and liquid crystal substrates, fired aluminum films, copper electrodes, etc.) , in the case of a solar cell, IV characteristics, etc.) ), Ag (for all), Ni (for when a small amount of Ni is plated on a silicon substrate) and the like. As an auxiliary material, it may be added by mixing, melting, or alloying not only metal but also glass containing metal (gas components such as oxygen in the glass are released to the outside during melting and alloying).

In S2, the main material and the auxiliary material are mixed with the base material. This mixes the main material and the auxiliary material with the base material prepared in S1.

In S3, the base material, the main material, and the auxiliary material are melted and alloyed. This is, in S2, the main material and the sub-material are mixed with the base material, heated and melted, and then mixed well for alloying. At this time, in the case where alloying is difficult because the main material or auxiliary material is oxidized by oxygen in the air, an inert gas (eg nitrogen gas) is blown into the crucible as necessary, or a melting furnace or vacuum that further satisfies the inert gas Use a melting furnace.

In S4, the solder material (ABS-S) is completed.

As described above, by preparing a base material, a main material, and a sub material, mixing them, and melting and alloying them, the SnZn solder (ABS-S) according to the present invention can be manufactured. Hereinafter, it will be sequentially described in detail.

Fig. 2 shows an explanatory view of the material manufacturing apparatus of the present invention.

In Fig. 2, a solder material 1 is a base material, a main material, and a subsidiary material prepared in S1 of Fig. 1 described above, and here, it is a fragment (coarsely pulverized) of metal, glass, or the like.

The solder material input plate 2 is to put the solder material 1 into the melting furnace 3 .

The melting furnace 3 is for heating with a heater 4 or the like, putting the solder material 1 therein, and melting, mixing, and alloying the base material, the main material, and the auxiliary material. The melting furnace 3 melts, mixes, and alloys the base material, the main material, and the auxiliary material, which are usually put into the inside in the atmosphere. At this time, if necessary, an inert gas (nitrogen gas, etc.) is blown in to reduce oxidation by oxygen in the air, or if necessary, it is sealed and filled with an inert gas (or vacuum exhausted). ))do.

As described above, the SnZn solder of the present invention can be manufactured by mixing the base material, the main material, and the auxiliary material prepared in S1 of FIG.

Fig. 3 shows a soldering explanatory diagram of a lead wire according to the present invention.

Fig. 3(a) shows a flowchart, and Fig. 3(b) shows an example of a substrate/lead connection.

In Fig. 3(a), in S11, preliminary soldering of a substrate pattern is carried out by means of an ultrasonic wave solder (ABS-S). This is, for example, to the electrode of the solar cell board, to the part (pattern) to be soldered from now on, the SnZn solder of the present invention (SnZn solder prepared in S4 in Fig. 1) is supplied to the tip of the ultrasonic soldering iron and melted. Also, by applying ultrasonic waves, soldering (referred to as ultrasonic pre-soldering) to the pattern portion on the substrate is preliminarily performed.

In S12, ultrasonic soldering or non-ultrasonic soldering of the lead wire and the like is performed. In S11, for example, to the part (pattern) pre-soldered by ultrasonic waves on the electrode of the solar cell board, while applying ultrasonic waves or not applying ultrasonic waves thereon along the lead connection, the SnZn solder of the present invention is melted to connect the lead wires. solder the In addition, when SnZn solder is pre-soldered for the lead connection, the supply of solder is unnecessary.

As described above, since normal soldering is difficult on the part to be soldered (for example, the electrode part of a solar cell board), the SnZn solder of the present invention is pre-soldered using ultrasonic waves (S11), and the pre-soldered Ultrasonic pre-soldering to electrode parts of solar cell boards, which cannot be soldered in the prior art, by ultrasonic soldering or non-ultrasonic soldering (S12) of the lead connection using the SnZn solder of the present invention on the part (pattern). It is possible to do ultrasonic soldering or non-ultrasonic soldering of the lead wire on it.

In addition, ultrasonic soldering is performed at 10 W or less, usually 2 to 3 W. If it is strong, it will not be strong because it will damage the film (for example, nitride film) formed on the solar cell board|substrate, or the crystal|crystallization of the board|substrate surface.

Fig. 3(b) shows an example of the substrate/lead connection.

In Fig. 3(b), the substrate is an A1, Sq substrate, a glass substrate, etc., and is an example of a substrate that is very difficult to solder with ordinary soldering. The SnZn solder of the present invention is ultrasonically pre-soldered to the portions (patterns) serving as electrodes of these substrates. Then, the lead connection can be soldered to the board by ultrasonically or non-ultrasonic soldering of the lead connection to this pre-soldered part (pattern).

In addition, the lead connection is a lead formation in which the SnZn solder of the present invention is used to solder the electrode portion (pattern) on the substrate, and a wire (a circular copper wire with the SnZn solder of the present invention is solder plated). One wire, it is easy to solder if it is squished in an oval shape), a ribbon (the SnZn solder of the present invention is pre-solder-plated on a ribbon in which a thin copper plate is cut to a width of about 1 mm), and the like.

Fig. 4 shows a soldering explanatory diagram of the present invention.

Fig. 4(a) shows an example of pre-soldering, and Fig. 4(b) shows an example of soldering a ribbon or a wire.

In Fig. 4(a), a silicon substrate 11 is an example of a solar cell substrate here, and for example, an aluminum sintered film on the entire back surface of the silicon substrate 11 (燒結膜) (12) was formed.

The aluminum sintered film 12 is an electrode (aluminum) formed by applying an aluminum paste (or screen printing in a predetermined pattern) to the entire surface of the back surface of the silicon substrate 11 shown in the solar cell substrate, and sintering sintered film).

The ultrasonic soldering iron tip 13 is a soldering iron tip that is heated while applying ultrasonic waves from an ultrasonic generator (not shown).

The solder (ABS-S) 14 is the SnZn solder (SnZn solder manufactured in S4 in Fig. 1) of the present invention.

Next, the soldering operation will be described.

(1) The silicon substrate 11 is transferred onto a preheating table, fixed by vacuum adsorption, and preheated (for example, preheated to about 180°C).

(2) Electrode pattern (short rectangular pattern ) formed on the aluminum sintered film 12 By applying ultrasonic waves, the aluminum sintered film 12 is moved at a constant speed in a state in which it is not brought into contact with each other to form a short rectangular pre-soldered pattern on the aluminum sintered film 12 .

As described above, the SnZn solder 14 of the present invention can be soldered with a predetermined pattern of the pre-solder pattern on the aluminum sintered film 12 .

Fig. 4B shows an example of soldering a ribbon or a wire.

In Fig. 4B, the ultrasonic soldering iron tip 13-1 is a soldering iron tip that is heated while applying ultrasonic waves from an ultrasonic generator (not shown) or without applying ultrasonic waves.

The soldering ribbon or wire 15 is obtained by pre-soldering the SnZn solder of the present invention to the ribbon or wire in advance. In addition, the wire 15 has good solderability when it is slightly deformed into an elliptical shape.

Next, the soldering operation of the preliminary soldering pattern portion of the ribbon or wire will be described.

(1) As in Fig. 4(a), the silicon substrate 11 is pre-heated.

(2) The soldering ribbon or wire 14 is placed along the pre-soldered pattern portion formed on the aluminum sintered film 12 portion on the silicon substrate 11 (the back side) of the soldering ribbon or wire 15, from above. While lightly pressing the ultrasonic or non-ultrasonic soldering iron tip 13-1, move it at a constant speed in the right direction shown to melt the solder of the solder ribbon or wire 15 and solder it to the pre-soldered pattern part.

As described above, it is possible to solder the ribbon or wire 15 to which the SnZn solder 14 of the present invention has been previously soldered to the portion of the pre-soldered pattern on the aluminum sintered film 12 .

In addition, the pros and cons of ultrasonic soldering or non-ultrasonic soldering of the present invention is higher than the strength of the ribbon or wire to be soldered by ultrasonic or non-ultrasonic soldering, pulling the ribbon or wire to break the board, etc. It pulls with a slightly weak force, and when it does not peel from a board|substrate etc., it determines with favorable, and when it peels, it determines with defectiveness.

Fig. 5 shows a composition example (ABS-S) of the solder of the present invention.

In Fig. 5, the base material, the main material, and the auxiliary material are the distinction between the base material, the main material, and the auxiliary material described in Fig. 1 .

The composition example is a composition example of a base material, a main material, and a subsidiary material.

The df% example is an example of df% of the composition of the base material, the main material, and the auxiliary material.

The sp% range is an example of the range of p% of the composition of the base material, the main material, and the subsidiary material.

What is shown in FIG. 5 is a composition example, a df% example, and a df% range as follows.

Here, as a composition example, in the beginning, Sn91vd% and Zn9d% were used as the base material. In addition, the composition range may be stable within the range in which the SnZn alloy can be produced, for example, Zn 1 to 15 gf%, and the remainder being Sn.

As materials, there are P, IPF, Bi, Sb, etc., but P is P (red phosphorus) and CPF8 alloy at the beginning (P is 8 7%, the remainder is an alloy of Cu, and P % is 8% of CPF 8%) copper) was used. In addition, when about 0.1 p% of P (red phosphorus) was added (saturated with P), and when P in Cp8 was added as a main material, it was necessary to add as much as about 0.16 p% (saturated with P). In the case of P, it is saturated to about 0.1 p% (or in the case of Cp8, about P = 0.16 p%), and when it is further added, it becomes supersaturated, and the viscosity of the SnZn solder significantly increases. Therefore, it is preferable to carry out the addition of P saturation or less for normal use which ensures fluidity|liquidity, wettability, etc. In the case of P, a very trace amount (a trace amount of about 0.001 gp%) may be sufficient. Moreover, even if P is saturated or supersaturated, what is necessary is just to use it suitably according to a use. Likewise, there is a tendency for other main materials as well, so it is good to determine the optimal amount of addition by experimentation as needed.

In addition, the total amount of the main material was preferably 1 to 1.5 wt% or less. The SnZn solder of the present invention obtained by mixing, melting, and alloying 1 to 1.5 wt% or less of the total amount of the main material with the base material (Sn91ｗd%, Zn9df%) is the same or equal to the melting temperature of the base material (for example, around 195°C). Alternatively, a lower melting temperature of 1 or 5° C. was measured, indicating that 1 to 1.5 wt% or less of the total amount of the main material was incorporated into the skeleton of the base material (SnZn alloy) and the skeleton was reconstructed, and as a result, the melting temperature was the same or lowered. In addition, it is also estimated that a mesh-shaped skeleton appears during mixing, melting, and alloying in a crucible, and when mixed and melted and melted, a certain alloy is observed.

In addition, sub materials include silicon, aluminum sintered film on silicon, and Cu (copper wire, copper pattern, etc.), Ag (sintered electrode), Ni (on the silicon surface). Nickel plating), etc., are added in consideration of the electrical characteristics (contact potential difference, contact resistance, IV characteristics in the case of solar cells, etc.) and also to improve bonding strength.

Fig. 6 shows an example of a solder trial of the present invention. The drawings show examples of which, among many examples, can be used for the soldering of FIG. 4 already described. Those that cannot be used are omitted.

In Fig. 6, as the base material of the SnZn solder of the present invention (the SnZn solder produced in S4 in Fig. 1), Sn91df% and Zn9d% were used.

As the auxiliary materials, A1 and Sq (others are omitted) were used.

As the main materials, metal materials were used for In, Bi, and P (red phosphorus). Copper phosphide of Cu was used for CPF8, with a P of 8 p% and the remainder. In addition, as described above, when Cp8 was used, it was not saturated unless the amount of P added was 0.16 p% equivalent among them (P (red phosphorus) was saturated at 0.1 p p%).

Sample N is the number of the sample to start.

With respect to the above prototype sample Ng, the ultrasonic ultrasonic soldering and non-ultrasonic soldering of FIG. 5 as already described were performed, and only the good ones were described. Items that cannot be soldered are omitted.

Fig. 7 is an explanatory diagram showing a TTC test of the solder of the present invention. Here, the sample NN "A-14" of Fig. 6, which has already been described, is used for the TTC test.

Fig. 7(a) schematically shows a TTC test example of ABS-S solder (A-14). At this point, the TV test has passed (and is still ongoing) over 1000 hours.

Fig. 7B shows an example of a sample photograph. As shown, the copper wire was soldered (ultrasonic soldering, or soldered with scratches) to an aluminum plate, a silicon surface, and an aluminum surface using A-14.

Fig. 7(c) shows an example of the temperature condition of the TTC test. As shown here,

·Maximum temperature is 87.5℃

Minimum temperature is -24.4℃

·Maximum humidity is 98.3%

Minimum humidity of 1.6%

A TTC test was performed under the conditions.

7( ) shows an example of the test environment and results. As shown here,

(1) The exam period is from May 1, 2019 to June 12, 2019 (1000 hours)

(2) Join the copper wire to the aluminum plate, silicon plate, and aluminum surface with solder A-14

(3) For high temperature conditions, put it at 80℃ in a high-temperature furnace. After adding the sample, the temperature is raised.

(4) For low temperature conditions, put it in the freezer at -20℃.

(5) Exchange is performed immediately without leaving the sample at room temperature.

As a result of the test, there is no problem because the solder does not collapse.

As a result of performing the TTC test for 1000 hours under the above test conditions, the result of passing the test was obtained with respect to sample NN "A-14".

Fig. 8 shows a TTC test example of the solder (A-14) of the present invention.

In Fig. 8, the horizontal axis represents the elapsed time (h). The ordinate indicates temperature (°C)/humidity (%), and the upper graph in the graph indicates humidity, and the lower graph indicates temperature.

In Fig. 8, the lower temperature graph in the graph is

The high temperature (maximum temperature) is 87.6°C, which is described in FIG. 7(c).

The low temperature (minimum temperature) is -24.4°C described in FIG. 7(c), indicating records up to 1000 hours.

In Figure 8, the upper humidity graph in the graph,

·The maximum humidity is 98.3% as shown in Fig. 7(c).

- The minimum humidity is 1.6% described in Fig. 7(c), and records up to 1000 hours have elapsed.

Fig. 9 shows an example of ultrasonic (rubbing)/paste of the present invention. Here in Figure 9,

・“Paste/Ultrasound (Rub)” refers to “Soldering by Ultrasonic Soldering” when soldering to an object to be soldered using the SnZn solder of the present invention, “Rubbing the object to be soldered with an iron tip without ultrasonic waves”, and “Ammonium chloride in paste ( NH4Cc)/hydrate (3 wt% or less, 0.05 wt% or more) is used”, “Ammonium chloride/anhydrous paste (3 wt% or less, 0.05 wt% or more) is used”, This is a distinction between "use of resin (resin) of paste (3 wt% or less, 0.05 wt% or more)".

ㆍThe object to be soldered is a material to be soldered using the SnZn solder of the present invention. It is a distinction between A1 (0.1mm thick plate) and stainless steel (0.1mm thick plate).

의 주석 도금선을 납땜하고 잡아 당겼을 때에 실리콘 웨이퍼가 깨어지는 힘(인장강도)일 때에 밀착우량이라고 판정)을 나타낸다.ㆍ◎ is the adhesion superiority (0.4 mm) of the SnZn solder of the present invention to the soldering target

When the silicon wafer is broken (tensile strength) when the tin-plated wire is soldered and pulled, it is judged as good adhesion).

의 주석 도금선을 납땜하고 잡아 당겼을 때에 실리콘 웨이퍼가 깨어지는 힘 또는 조금 약한 힘(인장강도)일 때에 밀착양호라고 판정)을 나타낸다.ㆍ○ indicates good adhesion (0.4 mm

When the silicon wafer is cracked or a little weak force (tensile strength) when the tin-plated wire is soldered and pulled, it is judged as good adhesion).

의 주석 도금선을 납땜하고 잡아 당겼을 때에 즉시 벗겨지는 상태)을 나타낸다.ㆍΔ is the adhesion agent (0.4 mm

It shows the state of being immediately peeled off when the tin-plated wire is soldered and pulled.

* indicates the poor adhesion of the SnZn solder of the present invention to the soldering target.

In the above experiment of FIG. 9, it was found that sufficient soldering strength was obtained with respect to Sq wafer, A1 sintered film, Cu, A1, and stainless steel in the case of "Ultrasound" and "Rubbing the soldering object with the iron tip without ultrasound".

In addition, when ammonium chloride hydrate (3 wt% or less, 0.05 wt% or more) was used, it was found that sufficient brazing strength was obtained in the case of Cu and Al.

In addition, when resin (resin) (3 wt% or less, 0.05 wt% or more) was used, it was found that sufficient brazing strength was obtained in the case of Cu.

정도 혹은 1mm x 1mm 정도의 실모양 땜납으로 가공(압연(壓延))한다. 이 실모양 땜납의 단면의 중심부근에서는, 상기에서 넣었던(혼입된) 분말을 관찰할 수 있다. 그리고 인두팁을 납땜 대상(예를 들면 Cu판 등, 필요에 따라 예비가열대(예를 들면 180℃)에 재치(裁置))에 대고 가열하면서 당해 실모양 땜납을 용융하고, 상기 실모양 땜납에 혼입된 분말(예를 들면 염화암모늄·수화물의 분말)을 분해하여 납땜 대상 부분의 대폭적인 밀착성의 개선을 시도하였다(예를 들면 Cu판의 경우에는 대폭적으로 밀착성을 개선할 수 있었다. 도9 참조).In addition, in the SnZn solder of the present invention mixed with powder used in the experiment, a hole (about 1-3 mm) is drilled in the center of a thick rod-shaped solder or a sheath is made, and the inside of the hole or the inside of the groove A predetermined amount of powder (for example, powder such as ammonium chloride, hydrate, or resin) is put on the back, and the rolling roller (with grooves) is repeated a plurality of times to sequentially elongate into a thin rod shape, and finally approximately 1 mm

It is processed (rolled) with a high-precision or 1mm x 1mm thread-like solder. In the vicinity of the central portion of the cross section of this thread-like solder, the above-mentioned (mixed) powder can be observed. Then, the iron tip is placed on a soldering object (eg, a Cu plate, etc., if necessary, placed on a preheating table (eg, 180° C.)) to melt the thread-like solder while heating, and to the thread-like solder. By decomposing the mixed powder (for example, powder of ammonium chloride/hydrate), an attempt was made to significantly improve the adhesiveness of the part to be brazed (for example, in the case of a Cu plate, the adhesiveness could be significantly improved. See Fig. 9 ).

1: Solder material
2: Solder material input plate
3: melting furnace
4: Heater 11: Silicon substrate
12: aluminum sintered film
13: Ultrasonic soldering iron tip
13-1: Ultrasonic or non-ultrasonic soldering iron tips
14: Solder
15: Soldering Ribbon or Wire

Claims (17)

In the SnZn solder made of an alloy of Sn and Zn,
In the base material, which is an alloy of Sn and Zn, a total of 1 to 1.5 wt% or less of a main material containing at least one of P, INF, Bi, and Sb is mixed to melt and alloy it. SｎZn solder. According to claim 1,
SnZn solder, characterized in that the melting temperature of the SnZn solder after melting and alloying is equal to or lower than the melting temperature of the base material. 3. The method of claim 1 or 2,
The SnZn solder, characterized in that the main material is alloyed within the skeleton of an alloy of Sn and Zn. 4. The method according to any one of claims 1 to 3,
Melting/alloying by mixing 5 wt% or less of a sub material including glass containing one or more or one or more of A1, Sｉ, Cu, Ag, and Ni, if necessary, into the base material SnZn solder, characterized in that 5. The method according to any one of claims 1 to 4,
SnZn solder characterized in that, as the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material to be melted and alloyed. 6. The method of claim 5,
SnZn solder, characterized in that the alloy of the main material and the sub material is an alloy of Cu and P. 7. The method according to any one of claims 1 to 6,
SnZn solder, characterized in that the base material, the main material, and the auxiliary material are mixed at once or divided into a plurality of materials to be melted and alloyed. 8. The method according to any one of claims 1 to 7,
SnZn solder characterized in that solder of lead wires is used for electrodes of solar cell substrates and liquid crystal substrates. 9. The method according to any one of claims 1 to 8,
Ammonium chloride/hydrate powder or powder containing ammonium chloride/hydrate is mixed in from 3 wt% or less to 0.05 wt% or more, and decomposed during brazing heating to improve solder adhesion to the object to be soldered SｎZn solder. A method for manufacturing an SnZn solder made of an alloy of Sn and Zn, the method comprising:
Method for producing SnZn solder, characterized in that the base material, which is an alloy of Sn and Zn, is melted and alloyed by mixing 1 to 1.5 wt% or less of the main material including at least one of P, In, Bi, and Sb in total. . 11. The method of claim 10,
A method for manufacturing SnZn solder, characterized in that the melting temperature of the SnZn solder after the melting and alloying is equal to or lower than the melting temperature of the base material. 12. The method of claim 10 or 11,
The method for manufacturing SnZn solder, characterized in that the main material is alloyed within the skeleton of an alloy of Sn and Zn. 13. The method according to any one of claims 10 to 12,
SnZn solder, characterized in that at least 5 wt% or less of a sub material containing glass containing at least one of A1, Sq, Cu, Ag, and Ni is mixed into the base material as necessary to melt and alloy it. manufacturing method. 14. The method according to any one of claims 10 to 13,
A method for producing SnZn solder, characterized in that, as the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material to be melted and alloyed. 15. The method of claim 14,
A method for manufacturing a SnZn solder, characterized in that an alloy of Cu and P is used as an alloy of the main material and the auxiliary material. 16. The method according to any one of claims 10 to 15,
A method for manufacturing SnZn solder, characterized in that the base material, the main material, and the auxiliary material are mixed at once or divided into a plurality of materials to be melted and alloyed. 17. The method according to any one of claims 10 to 16,
In the SnZn solder, ammonium chloride/hydrate powder or powder containing ammonium chloride/hydrate is mixed from 3 wt% or less to 0.05 wt% or more, and decomposed during brazing heating to improve solder adhesion to the object to be soldered. A method for manufacturing SnZn solder, characterized in that

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