TW202206614A - Snzn solder and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a SnZn solder and a manufacturing method thereof. The purpose is to provide a solder that is extremely strong with respect to electrodes of solar cell substrates and the likes, and can withstand repeated high and low temperature tests for many times, such that even if there is mixing in the solder, the melting temperature is about the same or lower. In addition, the solder is cheap. The present invention is constituted by mixing a main material containing at least one of P, In, Bi, and Sb into a base material of an alloy of Sn and Zn at a total amount of 1 to 1.5 wt% or less, and then melting and alloying them.

Description

SnZn solder and its manufacturing method

The present invention relates to SnZn solder used for solar cell substrates, liquid crystal substrates, and the like, and a method for producing the same.

In the past, tin-lead solder has been widely used for soldering of lead wires for electrodes of solar cell substrates and liquid crystal substrates, for reasons such as strong strength and low cost.

Furthermore, when the electrode is made of aluminum or the like, since sufficient soldering strength cannot be obtained, silver paste is applied and sintered, and a lead wire is soldered thereon with tin-lead solder.

In addition, recently, the demand for lead-free solder is gradually increasing due to the viewpoint of pollution and the like.

Compared with tin-lead solder, the conventional lead-free solder has problems that the strength is slightly insufficient relative to the required strength, or the price is high and cannot be used as a substitute.

The inventors of the present application discovered that the main materials, such as P, In, Bi, and Sb, were mixed in trace amounts of 1 to 1.5 wt % or less in total, and were melted and alloyed in SnZn solder consisting of an alloy of Sn and Zn, which is a type of lead-free solder. , and the SnZn solder, which is mixed with a small amount of Al, Si, Ag, Cu, Ni and other auxiliary materials according to the needs, is melted and alloyed, and the SnZn solder is extremely strong for the electrodes of solar cell substrates, etc., and can withstand repeated high temperature and low temperature. tested, and even with other ingredients mixed in, the melting temperature of SnZn solder was about the same or lower.

Therefore, the present invention relates to a SnZn solder, which is composed of an alloy of Sn and Zn, wherein a base material belonging to the alloy of Sn and Zn is mixed with a total of 1 to 1.5 wt% or less of one of P, In, Bi, and Sb. The above main materials are melted and alloyed.

At this time, the melting temperature of the SnZn solder after melting and alloying is the same as or lower than the melting temperature of the base material.

In addition, the main material is alloyed in the framework of the alloy of Sn and Zn.

Furthermore, according to requirements, one or more of Al, Si, Cu, Ag, and Ni or a sub-material of glass containing one or more of Al, Si, Cu, Ag, and Ni is mixed into the base material, and added to the base material. Melted and alloyed.

In addition, regarding the main material and the auxiliary material, the alloy of the main material and the auxiliary material is mixed into the base material, and it is melted and alloyed.

In addition, as the alloy of the main material and the auxiliary material, an alloy of Cu and P is used.

Furthermore, the base material, the main material, and the sub-materials are mixed at the same time or in a plurality of times, and are melted and alloyed.

In addition, SnZn solder is used for bonding wires to electrodes of solar cell substrates and liquid crystal substrates.

Furthermore, in the produced SnZn solder, 3wt% or less of 0.05wt% or more of ammonium chloride hydrate powder or powder containing ammonium chloride hydrate is mixed to decompose during soldering heating and improve the resistance to the object to be soldered. The welding density.

As described above, in the present invention, the base material of an alloy of Sn and Zn is mixed with a total of 1 to 1.5 wt % or less of a base material containing one or more of P, In, Bi, Sb, etc., and a trace amount is mixed as required. One or more of Al, Si, Cu, Ag, Ni, etc., or a sub-material of glass containing one or more of Al, Si, Cu, Ag, Ni, etc., is melted and alloyed, thereby becoming a solar cell substrate. Electrodes such as SnZn are extremely strong and can withstand repeated tests at high and low temperatures for many times. Moreover, even if other components are mixed, the melting temperature of SnZn solder is approximately the same or lower, and it can be manufactured at low cost.

In addition, the melting temperature of the SnZn solder after melting and alloying is the same as or lower than the melting temperature of the base material, and the increase in the melting temperature due to mixing can be eliminated.

Furthermore, the main material is alloyed in the framework of the alloy of Sn and Zn, so that the defect of undesired precipitation can be eliminated.

Furthermore, by mixing one or more of Al, Si, Cu, Ag, Ni, etc., or glass containing one or more of Al, Si, Cu, Ag, and Ni, and melting and alloying, SnZn solder can be produced. Improve electrical characteristics such as contact potential for welding objects.

In addition, by mixing the alloy of the main material and the auxiliary material, melting and alloying to produce SnZn solder, the stabilization of the main material can be achieved, and the solder can be repeatedly tested at high temperature and low temperature.

Furthermore, 3wt% or less 0.05wt% or more of ammonium chloride hydrate powder or powder containing ammonium chloride hydrate is mixed into the produced SnZn solder, which can be decomposed during soldering heating and improve the resistance to the object to be soldered. Weld tightness.

1: Solder material

2: Solder material input dish

3: melting furnace

4: Heater

11: Silicon substrate

12: Aluminum sintered film

13: Ultrasonic soldering iron front end

13-1: Front end of soldering iron

14: Solder

15: Tape, metal wire

S1, S2, S3, S4, S11, S12: Steps

FIG. 1 is an explanatory view of the solder manufacturing according to the present invention.

FIG. 2 is an explanatory diagram of the solder material manufacturing apparatus of the present invention.

Fig. 3 is an explanatory view of the welding of the wire of the present invention.

FIG. 4 is an explanatory diagram of welding of the present invention.

FIG. 5 is a composition example (ABS-S) of the solder of the present invention.

FIG. 6 is a test example of the solder of the present invention.

FIG. 7 is an explanatory diagram of the TC test of the solder of the present invention.

FIG. 8 is a TC test example of the solder (A-14) of the present invention.

Fig. 9 is an example of ultrasonic (scratch)/paste of the present invention.

FIG. 1 is an explanatory view of the solder manufacturing according to the present invention.

Fig. 1(a) shows a flow chart, and Fig. 1(b) shows an example of a material.

In FIG. 1( a ), step S1 prepares a base material, a main material, and a secondary material. This is the preparation of the following materials shown in the material example of Fig. 1(b).

˙Base metal: Sn91 Zn9

˙Main material: P, In, Bi, Sb

˙Auxiliary materials: Al, Si, Cu, Ag, Ni

Here, the base material is the base material (base material) of the SnZn alloy forming the SnZn solder of the present invention, and Sn is 91 wt % and Zn is 9 wt % as sample materials. The weight ratio of Sn and Zn can be arbitrarily set within the range that can make the alloy. For example, Zn can be 1 to 15 wt%, and the rest is Sn (the set ratio can be appropriately selected according to experiments such as melting temperature).

In addition, the main material is a material that affects the properties of welding such as oxide film removal, adhesion, wettability, fluidity, and viscosity on the surface of the object to be welded during welding. In the present invention, the total amount of the main material is used. The amount is set to 1 to 1.5 wt % or less. Here, the main material is mixed with one or more of P (removal of oxide film of the object to be welded, adhesion), In (wetting, fluidity), Bi (adhesion), and Sb (adhesion), melted, and alloyed the object material. Furthermore, since the main material is a small amount of 1 to 1.5 wt % in total, the melting temperature of the SnZn solder after mixing the main material with the base material, melting, and alloying is the same or equal to the melting temperature of the base material. Slightly lower (eg by around 1 to 5°C). This is presumed that the total amount of the main material is a trace amount of 1 to 1.5 wt % or less with respect to the base material, and enters the skeleton of the base material and reconstructs the skeleton.

Furthermore, the auxiliary material is a material further added to the base material and the main material to adjust the electrical properties (contact potential difference) of the object to be welded (semiconductor substrates such as solar cell substrates, liquid crystal substrates, fired aluminum films, copper electrodes, etc.). , contact resistance, IV characteristics of solar cells, etc.), adhesion, etc. become good, in this case Al (for the material of the fired aluminum film), Si (for the silicon substrate), Cu (for the copper electrode) material), Ag (relative to the material in all cases), Ni (relative to the material when a small amount of Ni is plated on the silicon substrate) and other materials. Auxiliary materials may be added by mixing, melting, and alloying glass containing metals other than metals (gas components such as oxygen contained in glass are released to the outside during melting and alloying).

Step S2 is to mix the main material and the auxiliary material with the base material. This is to mix the main material and the auxiliary material in the base material prepared in step S1.

In step S3, the base material, the main material, and the auxiliary material are melted and alloyed. This is to mix the main material and the auxiliary material with the base material in step S2 by heating and melting them, and stirring them sufficiently to alloy them. At this time, when the main material and auxiliary material are oxidized due to oxygen in the air and it is difficult to alloy, an inert gas (such as nitrogen) can be blown into the crucible as required, or a melting furnace filled with inert gas can be used. Vacuum furnace, etc.

Step S4 is to complete the solder material (ABS-S).

The SnZn solder (ABS-S) of the present invention can be produced by preparing a base material, a main material, and a sub-material as described above, mixing these, melting, and alloying them. The following is a detailed description in sequence.

FIG. 2 is an explanatory diagram showing the material manufacturing apparatus of the present invention.

In FIG. 2 , the solder material 1 is the base material, the main material, and the auxiliary material prepared in the step S1 of FIG. 1 described above, and here it is a fragment (roughly pulverized) of metal, glass, or the like.

The solder material input container 2 is a container for containing the solder material to be input into the melting furnace 3 .

The melting furnace 3 is heated by the heater 4, and when the solder material 1 is put into the inside, the base material, the main material, and the auxiliary material are melted and stirred to be alloyed. The melting furnace 3 usually melts and stirs the base material, main material, and auxiliary materials put into the inside in the atmosphere to alloy them. At this time, inert gas (nitrogen, etc.) is blown in as required to reduce oxidation caused by oxygen in the air, and further, it is sealed and filled with inert gas (or vacuum exhaust) as required.

As described above, the base material, main material and auxiliary material prepared in step S1 of FIG. 1 are mixed, melted in the melting furnace 3 and stirred to be alloyed to produce the SnZn solder of the present invention.

FIG. 3 is an explanatory diagram showing the welding of the wire of the present invention.

Fig. 3(a) shows a flowchart, and Fig. 3(b) shows an example of a substrate/lead.

In FIG. 3( a ), step S11 is to pre-solder the solder to the substrate pattern with ultrasonic waves. For example, in the electrode of the solar cell substrate, for the part (pattern) to be soldered, the SnZn solder of the present invention (the SnZn solder produced in step S4 in FIG. 1 ) is supplied to the front end of the ultrasonic soldering iron and made The pattern portion on the substrate is preliminarily welded (referred to as ultrasonic pre-soldering) by melting and applying ultrasonic waves.

Step S12 is to perform ultrasonic welding or non-ultrasonic welding on the wires and the like. This is to make the wire abut on the part (pattern) that has been ultrasonically pre-soldered on the electrode of the solar cell substrate in step S11, and apply ultrasonic waves or no ultrasonic waves thereon, and at the same time make the SnZn solder of the present invention. Melt and solder the wire. In addition, when the SnZn solder is pre-soldered to the wire, it is not necessary to supply the solder.

As described above, since it is difficult to perform normal soldering on the part to be soldered (for example, the cell part of the solar cell substrate), the pre-soldering of the SnZn solder of the present invention is performed using ultrasonic waves (step S11 ), and after the pre-soldering is performed On the part (pattern), the SnZn solder of the present invention is used for ultrasonic welding or non-ultrasonic welding (step S12), whereby the electrode part of the solar cell substrate that cannot be soldered in the past can be ultrasonically preheated. Solder, and sonic or no sonic solder the wires on it.

In addition, ultrasonic welding is performed at 10W or less, and generally, ultrasonic welding is performed at 2 to 3W. If it is too strong, it will damage the film (eg nitride film) formed on the solar cell substrate, the crystals on the surface of the substrate, etc., so the ultrasonic welding is not performed too strongly.

Figure 3(b) shows a substrate/lead example.

In FIG. 3( b ), the substrates are Al, Si substrates, glass substrates, etc., and are examples of substrates that are extremely difficult to solder by normal soldering. For the portions (patterns) that become the electrodes of these substrates, the present invention is SnZn solder is ultrasonically pre-soldered. Then, on the pre-soldered portion (pattern), the lead wire is ultrasonically welded or non-ultrasonic welded, whereby the lead wire can be welded to the substrate.

Furthermore, the lead wire is a lead wire of a portion (pattern) of the electrode on the substrate that is soldered using the SnZn solder of the present invention, and is a metal wire (a metal wire formed by plating the SnZn solder of the present invention on a circular copper wire, If it is slightly pressed into an ellipse, it is easy to solder), a tape (for a tape obtained by cutting a copper sheet with a width of about 1 mm, the SnZn solder of the present invention is plated in advance) and the like.

FIG. 4 is an explanatory diagram of welding of the present invention.

FIG. 4( a ) shows an example of pre-welding, and FIG. 4( b ) shows an example of welding of strips or wires.

In FIG. 4( a ), the silicon substrate 11 is an example of a solar cell substrate in this example, and the aluminum sintered film 12 is formed on the entire surface of the silicon substrate 11 , for example, the back surface.

The aluminum sintered film 12 is an electrode (aluminum sintered film) formed by coating the entire surface of the rear surface of the silicon substrate 11 which is a solar cell substrate with an aluminum paste (or, by screen printing in a predetermined pattern) and sintering it. .

The front end 13 of the ultrasonic soldering iron applies ultrasonic waves from an ultrasonic generator (not shown) and heats at the same time.

The solder (ABS-S) 14 is the SnZn solder of the present invention (the SnZn solder produced in step S4 in FIG. 1 ).

Next, the welding operation will be described.

(1) The silicon substrate 11 is transported to a preheating stage, vacuum suction-fixed, and preheated (for example, preheated to about 180° C.).

(2) For the electrode pattern (striped pattern) to be formed on the aluminum sintered film 12, from the start point to the end point, the solder 14 is automatically supplied to the front end 13 of the ultrasonic soldering iron shown in the figure, and it is melted and Ultrasonic waves are applied during the process, and the aluminum sintered film 12 is moved at a certain speed in a state close to the extent that it does not scratch the aluminum sintered film 12 , thereby forming a long pre-welded pattern on the aluminum sintered film 12 .

As described above, the SnZn solder 14 of the present invention can be soldered on the aluminum sintered film 12 to form a pre-soldering pattern of a predetermined pattern.

Fig. 4(b) shows an example of welding of the tape or wire.

In FIG. 4( b ), the front end 13 - 1 of the soldering iron capable of applying ultrasonic waves applies ultrasonic waves and heats at the same time, or heats without applying ultrasonic waves.

The tape or wire 15 with solder is pre-soldered with the SnZn solder of the present invention on the tape or wire. In addition, when the metal wire 15 is slightly deformed into an ellipse, the weldability is good.

Next, the welding operation of the tape or wire to the pre-welded pattern portion will be described.

(1) As in FIG. 4( a ), the silicon substrate 11 is preheated.

(2) For the solder-attached tape or wire 15 arranged along the pre-soldering pattern portion of the portion of the aluminum sintered film 12 formed on the silicon substrate 11 (back surface), ultrasonic waves or no ultrasonic waves can be applied from above. The front end 13-1 of the soldering iron is lightly pressed and moved to the right of the figure at a certain speed at the same time, and the solder attached to the solder tape or metal wire 15 is melted and soldered to the pre-soldered pattern part.

As described above, the strip or wire 15 pre-soldered with the SnZn solder of the present invention may be welded to the portion of the pre-soldered pattern on the aluminum sintered film 12 .

In addition, the judgment of the merits of ultrasonic welding and non-ultrasonic welding of the present invention is that after ultrasonic welding or non-ultrasonic welding is performed on the welding object part with a strip or metal wire, the force is slightly higher than that of the substrate, etc. When the tape or wire was pulled by a weak force, it was judged as excellent when it did not peel off from the substrate, and it was judged as poor when it peeled off from the substrate.

FIG. 5 shows a composition example (ABS-S) of the solder of the present invention.

In FIG. 5 , the base material, the main material, and the auxiliary material are the differences between the base material, the main material, and the auxiliary material explained in FIG. 1 .

The composition example is the composition example of the base material, the main material, and the auxiliary material.

The wt% example is an example of the wt% of the composition of the base material, the main material, and the auxiliary material.

The wt% range is an example of the wt% range of the composition of the base material, the main material, and the auxiliary material.

The composition, wt% example, and wt% range are as follows as shown in FIG. 5 .

Here, as for the composition example, in the trial production, Sn 91 wt % and Zn 9 wt % as shown in the figure were used as the base material. Furthermore, the composition range is a range that can produce SnZn and is stable. For example, it can be 1 to 15wt% of Zn, and the rest is Sn. That's it.

As far as the main material is concerned, although there are P, In, Bi, Sb, etc., P (red phosphorus) and CuP8 alloy are used in the trial production (P is 8wt%, the rest are alloys of Cu, and the wt% of P is CuP8 8% of copper phosphide). In addition, when adding about 0.1 wt % of P (P saturated state) and when adding P in CuP8 as the main material, it is necessary to add as much as about 0.16 wt % (P saturated state). P is saturated at about 0.1 wt % (or about P=0.16 wt % in the case of CuP8), and when added further, it becomes supersaturated, and the viscosity of the SnZn solder undesirably increases greatly. Therefore, in order to secure the fluidity and wettability for normal use, it is preferable to add P at or below the saturation level. P may also be present in a very small amount (a small amount of about 0.001 wt %). Furthermore, the saturation and oversaturation of P And can also be used appropriately according to the purpose. Similarly, other main materials also have this tendency, so the optimum addition amount can be determined in experiments according to the needs.

Furthermore, the total amount of the main materials is preferably 1 to 1.5 wt % or less. The total amount of the main material is mixed with 1 to 1.5wt% to the base material (Sn 91wt%, Zn 9wt%), and the SnZn solder of the present invention is melted and alloyed. The actually measured melting temperature is compared with the base material. The melting temperature of the material is the same or reduced by 1 to 5 °C. This is presumed that 1 to 1.5 wt% or less of the total amount of the main material enters the skeleton of the base material (SnZn alloy) to rebuild the skeleton, resulting in the same or lower melting temperature. In addition, a mesh-like skeleton appeared during mixing, melting, and alloying in the crucible, and it was observed that a uniform alloy was obtained when the whole was melted and melted by stirring, and the reason for this can also be presumed.

Furthermore, since the solar cell substrate, the liquid crystal substrate, etc. are made of silicon, and there is an aluminum sintered film on the silicon, Si, Al, and Cu (copper wire, copper pattern, etc.), Ag (sintered electrode), Ni (nickel plating on the surface of silicon) is added to improve electrical characteristics (contact potential difference, contact resistance, IV characteristics of solar cells, etc.), bonding strength, and the like.

FIG. 6 shows a test example of the solder of the present invention. The figure shows an example of the solder that can be used for the soldering of Fig. 4 described above, among the solders of most trial productions. If the user cannot use it, the illustration is omitted.

In FIG. 6 , Sn 91 wt % and Zn 9 wt % are used as base materials of the SnZn solder of the present invention (SnZn solder produced in step S4 of FIG. 1 ).

As the auxiliary materials, Al and Si (others are omitted) are used.

The main materials of In, Bi, and P (red phosphorus) are metal materials. The CuP8 system uses copper phosphide whose P is 8wt% and the rest is Cu. In addition, as described above, when CuP8 is used, the addition amount of P in it is not equivalent to 0.16 wt % and will not be saturated (P (red phosphorus) is saturated at 0.1 wt %).

Sample No is the serial number of the sample made by the test.

Regarding the above-mentioned sample Nos., ultrasonic welding and non-ultrasonic welding in Fig. 5 described above were performed, and only good solders were described. Solders that cannot be soldered are omitted.

FIG. 7 is an explanatory diagram showing the TC test of the solder of the present invention. Here, the sample No. "A-14" of FIG. 6 which has already been described is used for the TC test.

FIG. 7( a ) schematically shows a TC test example of the ABS-S solder (A-14). So far TC testing has exceeded 1000 hours (and continues).

Fig. 7(b) shows an example of a sample photograph. As shown, use A-14 to solder copper wire to aluminum plate, silicon side, aluminum side (ultrasonic solder, or apply scratch and solder).

Figure 7(c) shows the temperature conditions for the TC test. Here, as shown in the figure, the TC test was carried out under the following conditions.

˙Maximum temperature is 87.5℃

˙The minimum temperature is -24.4℃

˙Maximum humidity 98.3%

˙Minimum humidity 1.6%

Figure 7(d) shows an example of the test environment and results. Here, as shown in the figure,

(1) The test period is from May 1 to June 12, 2019 (1000 hours)

(2) Bonding copper wire to aluminum plate, silicon plate, aluminum surface with solder A-14

(3) High temperature conditions are placed in a high temperature furnace at 80°C. After the sample is put in, the temperature is raised.

(4) The low temperature conditions are placed in the freezer at -20°C.

(5) The exchange system immediately replaces the sample without leaving it at room temperature.

The test result is that the solder has not collapsed and there is no problem.

As a result of the TC test performed under the above test conditions for 1000 hours, the result of the test was obtained for the sample No. "A-14".

FIG. 8 shows a TC test example of the solder (A-14) of the present invention.

In FIG. 8 , the horizontal axis represents the elapsed time (h). The vertical axis represents temperature (°C)/humidity (%), the upper curve in the figure represents humidity, and the lower curve represents temperature.

In Figure 8, the temperature curve in the lower part of the figure is

˙The high temperature (maximum temperature) is 87.6℃ as shown in Figure 7(c)

˙The low temperature (minimum temperature) is -24.4℃ as shown in Figure 7(c) , and displays the record after 1000 hours.

In Figure 8, the humidity curve in the upper part of the figure is

˙The maximum humidity is 98.3% as shown in Figure 7(c)

˙The minimum humidity is 1.6% as shown in Figure 7(c) , and displays the record after 1000 hours.

Figure 9 shows an example of the ultrasonic (scratch)/paste of the present invention. Here, in Figure 9:

˙ "Paste/Ultrasonic (Scratching)" refers to the difference between "Ultrasonic soldering", "No ultrasonic and scraping the object to be soldered with a soldering iron", "Using Ammonium chloride (NH4Cl) hydrate in paste form (3wt% or less, 0.05wt% or more)", "Ammonium chloride anhydrate in paste form (3wt% or less, 0.05wt% or more)", and " Use paste resin (turpentine) (3wt% or less, 0.05wt% or more)".

˙The object to be soldered is the material to be soldered using the SnZn solder of the present invention, which is divided into Si (wafer, about 0.2mm thick), Al sintered film sintered on the wafer, Cu (0.1mm thick plate), Al (0.1mm thick plate), stainless steel (0.1mm thick plate).

之鍍錫線後拉扯時，若達矽晶圓斷裂之力(拉伸強度)，判定為密接優良)。 ˙◎ means that the SnZn solder of the present invention has excellent adhesion to the object to be soldered (0.4 mm for soldering)

When the wire is pulled after the tinned wire, if it reaches the breaking force (tensile strength) of the silicon wafer, it is judged that the adhesion is excellent).

之鍍錫線後拉扯時，若達矽晶圓斷裂之力或稍弱之力(拉伸強度)，判定為密接佳)。 ˙○ indicates that the SnZn solder of the present invention has a good adhesion to the object to be soldered (0.4mm for soldering)

When the tinned wire is pulled, if it reaches the breaking force of the silicon wafer or a slightly weaker force (tensile strength), it is judged as a good adhesion).

之鍍錫線後拉扯時，立即剝離之狀態)。 ˙△ indicates that the SnZn solder of the present invention has weak adhesion to the soldering object (0.4 mm for soldering)

When the tinned wire is pulled, it will be peeled off immediately).

˙× indicates that the SnZn solder of the present invention has poor adhesion to the object to be soldered.

According to the experiment shown in Fig. 9 above, it can be seen that in the case of "ultrasonic welding" and "no ultrasonic and the object to be welded is scratched with a soldering iron", sufficient welding can be obtained for Si wafer, Al sintered film, Cu, Al, and stainless steel. strength.

Furthermore, when ammonium chloride hydrate (3 wt % or less, 0.05 wt % or more) is used, sufficient weld strength can be obtained for Cu and Al.

Furthermore, when resin (turpentine) is used (3 wt % or less, 0.05 wt % or more), sufficient welding strength can be obtained with respect to Cu.

左右或一邊為1mm左右之角柱形之線狀焊料。該線狀焊料的剖面的中心附近可觀察到前述填入(混入)之粉末。然後，使烙鐵接觸於焊接對象(例如Cu板等，依需求載置於預加熱台(例如180℃))並進行加熱而使該線狀焊料熔融，將混入該線狀焊料之粉末(例如氯化銨水合物之粉 末)分解而嘗試大幅改善對於焊接對象的部分之密接性(例如，為Cu板之情形係大幅改善了密接性。參閱圖9)。 In addition, the SnZn solder of the present invention mixed with powder used for the experiment is to open a hole (about 1-3 mm) in the center of the thick rod-shaped solder, or cut a notch, etc., and fill the inside of the hole or the inside of the notch. A predetermined amount of powder (such as ammonium chloride hydrate or resin powder) is added, and it is repeatedly stretched into a thin rod shape by rolling (forging) rollers repeatedly, and finally processed into a shape of about 1mm.

The left and right or one side is about 1mm corner cylindrical wire solder. The powder filled (mixed) was observed in the vicinity of the center of the cross section of the wire-shaped solder. Then, the soldering iron is brought into contact with the object to be soldered (such as a Cu board, etc., placed on a preheating table (such as 180° C.) as required) and heated to melt the wire-shaped solder, and the powder (such as chlorine) mixed into the wire-shaped solder ammonium hydrate powder) was decomposed to try to greatly improve the adhesion to the part to be welded (for example, in the case of a Cu plate, the adhesion was greatly improved. See FIG. 9 ).

S1, S2, S3, S4: Steps

Claims (20)

A SnZn solder, which is composed of an alloy of Sn and Zn, wherein a base material belonging to an alloy in which Zn is 1 to 15 wt % and the rest is Sn is mixed with a total of 1 to 1.5 wt % or less of P, In, Bi, and Sb. One or more of the main materials are melted and alloyed, and the reduction of oxide film removal, adhesion, fluidity, and viscosity improvement is suppressed, and the melting temperature of the SnZn solder after melting and alloying. It becomes the same as or lower than the melting temperature of the aforementioned base material, and the melting temperature becomes high temperature is suppressed. The SnZn solder according to claim 1, wherein the main material is alloyed in a framework of an alloy of Sn and Zn. The SnZn solder according to claim 1, wherein 5 wt % or less of one or more of Al, Si, Cu, Ag, and Ni or Al, Si, Cu, Ag, and Ni are mixed into the base material as required. One or more auxiliary materials of glass, which are melted and alloyed. The SnZn solder according to claim 2, wherein 5 wt % or less of one or more of Al, Si, Cu, Ag, and Ni or Al, Si, Cu, Ag, and Ni are mixed into the base material as required. One or more auxiliary materials of glass, which are melted and alloyed. The SnZn solder according to claim 3, wherein, in the main material and the sub-material, an alloy of the main material and the sub-material is mixed into the base material, and is melted and alloyed. The SnZn solder according to claim 4, wherein, with regard to the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material, and is melted and alloyed. The SnZn solder according to claim 5, wherein an alloy of Cu and P is used as the alloy of the main material and the auxiliary material. The SnZn solder according to claim 6, wherein an alloy of Cu and P is used as the alloy of the main material and the auxiliary material. The SnZn solder according to any one of Claims 1 to 8, wherein the base material, the main material, and the auxiliary material are mixed at the same time or in a plurality of times, and are melted and alloyed. The SnZn solder according to any one of claims 1 to 8 is used for soldering wires to electrodes of solar cell substrates and liquid crystal substrates. A SnZn solder, in the SnZn solder described in any one of claims 1 to 8, mixed with 3wt% or less of 0.05wt% or more of ammonium chloride hydrate powder or powder containing ammonium chloride hydrate, so as to be It decomposes during welding heating to improve the welding adhesion to the object to be welded. A manufacturing method of SnZn solder, which is to manufacture SnZn solder composed of an alloy of Sn and Zn, the manufacturing method comprising mixing 1 to 1.5 wt % or less of a base material belonging to an alloy in which Zn is 1 to 15 wt % and the rest is Sn. It contains one or more main materials among P, In, Bi, and Sb, and is melted and alloyed to suppress the reduction of oxide film removal, adhesion, fluidity, and viscosity improvement, and to melt and alloy the above. After that, the melting temperature of the SnZn solder becomes the same as or lower than the melting temperature of the aforementioned base material, and the melting temperature is suppressed from becoming high, and production is carried out. The method for producing a SnZn solder according to claim 12, wherein the main material is alloyed in a framework of an alloy of Sn and Zn. The manufacturing method of SnZn solder according to claim 12, wherein, according to needs, the base material is mixed with one or more of Al, Si, Cu, Ag, and Ni at 5 wt% or less, or contains Al, Si, Cu, Ag, One or more sub-materials of glass among Ni, which are melted and alloyed. The method for producing SnZn solder according to claim 13, wherein the base material is mixed with 5 wt% or less of one or more of Al, Si, Cu, Ag, and Ni, or contains Al, Si, Cu, Ag, One or more sub-materials of glass among Ni, which are melted and alloyed. The method for producing SnZn solder according to claim 14, wherein, for the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material, and is melted and alloyed. The method for producing SnZn solder according to claim 15, wherein, for the main material and the auxiliary material, an alloy of the main material and the auxiliary material is mixed into the base material, and is melted and alloyed. The method for producing SnZn solder according to claim 16, wherein an alloy of Cu and P is used as the alloy of the main material and the auxiliary material. The method for producing SnZn solder according to any one of claims 14 to 18, wherein the base material, the main material, and the auxiliary material are mixed simultaneously or in a plurality of times, and are melted and alloyed. The method for producing SnZn solder according to any one of Claims 12 to 19, wherein the SnZn solder is mixed with 3wt% or less and 0.05wt% or more of ammonium chloride hydrate powder or containing ammonium chloride hydrate The powder is decomposed during welding heating to improve the welding adhesion to the object to be welded.

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