TW202105527A - Laser annealing protection plate and method for manufacturing the same - Google Patents

Abstract

A laser annealing protection plate and method for manufacturing the same is disclosed. The laser annealing protection plate includes a metal substrate, a first protection layer and a second protection layer. The first protection layer is disposed on the metal substrate, and the second protection layer is disposed on the first protection layer.

Description

Laser annealing protection plate and manufacturing method thereof

The invention relates to a laser annealing protection board and a manufacturing method thereof.

The material undergoes an annealing step in the production process to improve the microstructure of the material. Annealing system heats the material to a specific temperature and stays for a specific time, and then slowly cools it at a specific rate to further reduce the residual stress inside the material, in order to achieve a better crystal structure. The annealing process can be divided into furnace annealing, heating plate annealing, microwave annealing, or laser annealing due to the different heating elements used.

Among them, laser annealing is often used in semiconductor manufacturing processes to anneal wafers. Because laser annealing has the advantages of precision, rapidity, low thermal diffusion distance, and only heating the surface, it can be heated to the crystal in milliseconds. The melting temperature of the circle (above 800 degrees Celsius). _{In addition, a CO 2} laser can be used in the laser annealing process with a wavelength of about 10600 nm.

However, the laser annealing process is often accompanied by high heat (1250 degrees Celsius), which is likely to cause high-temperature damage to the instruments, devices, or circuits around the wafer. Therefore, the protective plate is often used to withstand the actual contact of the laser with the wafer under about 100 watts. Contact power to protect the above devices.

Due to the limited physical properties of the material, the conventional protective plate has limited heat dissipation performance, and the thermal energy accumulation makes the protective plate easy to oxidize. Therefore, the protective plate must be replaced regularly, which increases the production cost. In addition, the surface of the protective plate will also produce holes with the bombardment of the laser, thus causing the protective plate material to become particle contamination, causing the wafer to be contaminated. Furthermore, the reflectivity of the conventional protection plate is low, so the protection plate absorbs a large amount of energy during laser bombardment, which reduces the life of the protection plate and increases the consumption rate of the protection plate.

Therefore, there is an urgent need to develop a laser annealing protection plate to overcome the above-mentioned problems.

In view of this, the present invention provides a laser annealing protection plate and a manufacturing method thereof. By extending the life of the laser annealing protection plate, the consumption rate of the protection plate is reduced and the production cost is further reduced. In addition, the generation of holes in the protection plate is further reduced, thereby reducing the probability of particle contamination of the wafer. Furthermore, the protection plate can also disperse part of the laser energy by the reflection principle, reduce the absorbed energy, and increase the life of the protection plate.

The laser annealing protection board of the present invention includes a metal substrate and a multilayer protection layer including a first protection layer and a second protection layer. The first protective layer is an oxide layer, a fluoride layer, or a combination thereof, and the second protective layer is an oxide layer. And wherein the second protection layer is in close contact with the first protection layer, the first protection layer and the second protection layer are alternately stacked on the metal substrate, and the first protection layer is located on the metal substrate.

In the laser annealing protection plate of the present invention, the number of layers of the multi-layer protection layer is unlimited, and can be 2 to 100 layers, preferably 2 to 50 layers, more preferably 2 to 30 layers, most preferably 2 to 10 layers, But it is not limited to this.

In the laser annealing protection plate of the present invention, the metal substrate is a high-temperature resistant substrate, an aluminum substrate, an aluminum alloy substrate, or a combination thereof, preferably the metal substrate is selected from molybdenum, tungsten, tantalum, stainless steel, aluminum, or alloys thereof, Or other materials with high melting point and high thermal conductivity. More preferably, the metal substrate is selected from molybdenum, tungsten, aluminum, or alloys thereof, and most preferably, the metal substrate is molybdenum, aluminum, or alloys thereof, but is not limited thereto.

In the laser annealing protection plate of the present invention, the material of the first protection layer is oxide, fluoride, or a combination thereof. Preferably, the first protective layer is an oxide, a fluoride, or a combination thereof having a first refractive index nL between 1.3 and 1.45. More preferably, the first protective layer is made of silicon dioxide, magnesium fluoride, or a combination thereof, but not limited thereto.

In the laser annealing protection plate of the present invention, the thickness of the first protection layer is in the range of 200 nm to 500 nm, preferably 300 nm to 450 nm, more preferably 310 nm to 400 nm, most preferably 330 nm to 350 nm, but not limited to this.

In the laser annealing protection plate of the present invention, the material of the second protection layer is an oxide having a second refractive index nH between 2 and 2.6. More preferably, the material of the second protective layer is titanium dioxide, zirconium oxide, aluminum oxide, hafnium oxide, tantalum oxide, or a combination thereof, and most preferably the second protective layer is titanium dioxide, zirconium oxide, tantalum oxide, or a combination thereof , But not limited to this.

In the laser annealing protection plate of the present invention, the thickness of the second protection layer is in the range of 150 nm to 300 nm, preferably 180 nm to 280 nm, more preferably 200 nm to 250 nm, and most preferably 200 nm to 300 nm. 240 nm, but not limited to this.

The laser annealing protection board of the present invention further includes an interface layer located between the metal substrate and the first protection layer, but is not limited to this.

In the laser annealing protection board of the present invention, the material of the interface layer is oxide or metal. Preferably, the interface layer is aluminum oxide, chromium, titanium, or a combination thereof, more preferably the interface layer is aluminum oxide, chromium, or a combination thereof, and most preferably the interface layer is aluminum oxide, but it is not limited thereto.

In the laser annealing protection plate of the present invention, the thickness of the interface layer is in the range of 10 nm to 50 nm, preferably 10 nm to 40 nm, more preferably 10 nm to 30 nm, most preferably 10 nm to 20 nm , But not limited to this.

The manufacturing method of the laser annealing protection plate of the present invention includes the following steps: first providing a metal substrate; forming an interface layer on the metal substrate; and forming a first protective layer and a first protective layer on the interface layer Multi-layer protection layer of the second protection layer. The second protective layer is in close contact with the first protective layer, and the first protective layer and the second protective layer form an alternate stacking arrangement on the metal substrate.

In the manufacturing method of the laser annealing protection plate of the present invention, the formation method of the multilayer protection layer is not limited, and it is preferable that the formation of the multilayer protection layer uses physical vapor deposition, sputtering, chemical vapor deposition, or a combination thereof It is more preferable that the formation of the multi-layer protective layer uses physical vapor deposition and sputtering, and it is more preferable that the formation of the multi-layer protective layer uses physical vapor deposition, but it is not limited to this. In addition, the formation of the multi-layer protective layer can also use an ion assist system to assist in the formation of optical thin films while performing physical vapor deposition.

In the manufacturing method of the laser annealing protection plate of the present invention, the deposition pressure of the physical vapor deposition is preferably 1.332×10 ^-4 Pa to 6.67×10 ^-4 Pa, but it is not limited thereto.

In the manufacturing method of the laser annealing protection plate of the present invention, the physical vapor deposition is performed using an electron gun, and the output power of the electron gun of the physical vapor deposition is preferably 5 kW to 10 kW, but is not limited to this.

In the manufacturing method of the laser annealing protection plate of the present invention, the working temperature of the physical vapor deposition is 100 degrees Celsius to 300 degrees Celsius, preferably 100 degrees Celsius to 250 degrees Celsius, more preferably 100 degrees Celsius to 200 degrees Celsius , But not limited to this.

The following will cooperate with the drawings and describe in detail to make the other objectives, advantages, and novel features of the present invention more obvious.

(Laser annealing protection plate structure)

2A to 2C are schematic diagrams of a laser annealing protection plate according to an embodiment of the invention.

As shown in FIG. 2A, the present invention provides a laser annealing protection board 1, which includes a metal substrate 2 and a multi-layer protection layer 4. The metal substrate 2 can be a high-temperature resistant substrate, an aluminum substrate, an aluminum alloy substrate, or a combination thereof, and the material of the metal substrate 2 can be selected from molybdenum, tungsten, tantalum, alloy, stainless steel, aluminum, a combination thereof, or others with a high melting point And high thermal conductivity materials, but not limited to this. In this embodiment, the material of the metal substrate 2 is a molybdenum substrate or a molybdenum alloy substrate. Since the material of the metal substrate 2 has a relatively high melting point, it can withstand the high temperature generated by the laser annealing process. The multilayer protection layer 4 includes a first protection layer 41 and a second protection layer 42, wherein the second protection layer 42 is in close contact with the first protection layer 41, the first protection layer 41 and the second protection layer 42 An alternate stacking arrangement is formed on the metal substrate 2, and the first protection layer 41 is located on the metal substrate 2. In this embodiment, the material of the first protective layer 41 is silicon dioxide, and the material of the second protective layer 42 is titanium dioxide. In addition, the first protection layer 41 and the second protection layer 42 of the laser annealing protection plate 1 have high reflectivity, which can reflect part of the laser, thereby reducing the laser energy received by the laser annealing protection plate 1 .

In this embodiment of the laser annealing protection plate of the present invention, the number of layers of the multilayer protection layer 4 is two. The material of the first protection layer 41 is an oxide, a fluoride, or a combination thereof with a first refractive index nL between 1.3 and 1.45. In addition, the material of the second protection layer 42 is an oxide having a second refractive index nH between 2 and 2.6.

In this embodiment of the laser annealing protection plate of the present invention, since the first protection layer 41 is directly disposed on the metal substrate 2, its adhesion is acceptable, and the first protection layer 41 and the second protection layer 42 are opposite to each other. The laser annealing protection plate with the interface layer is easier to peel off from the metal substrate 2.

In this embodiment of the laser annealing protection plate of the present invention, the thickness of the first protection layer 41 is in the range of 330 nm to 350 nm, and the thickness of the second protection layer 42 is in the range of 200 nm to 240 nm Within, but not limited to, the first protection layer 41 and the second protection layer 42 can provide better reflectivity within this thickness range, and at the same time balance with the consumption of evaporation source materials when manufacturing the thin film.

As shown in FIG. 2B, in this embodiment of the laser annealing protection plate of the present invention, it further includes an interface layer 5 between the metal substrate 2 and the first protection layer 41, but it is not limited thereto. The material of the interface layer 5 is oxide or metal. In this embodiment, the material of the interface layer 5 is alumina. The interface layer 5 can improve the adhesion between the first protection layer 41 and the metal substrate 2, in other words, reduce the probability of the first protection layer 41 peeling off the metal substrate 2.

In this embodiment of the laser annealing protection plate of the present invention, the thickness of the interface layer 5 is in the range of 10 nm to 20 nm, but it is not limited thereto.

As shown in FIG. 2C, in this embodiment of the laser annealing protection plate of the present invention, it further includes a third protection layer 43, which is the same as the first protection layer 41, is disposed on the second protection layer 42 and is similar to The first protective layer 41 is made of the same material, but is not limited thereto. The arrangement of the third protective layer 43 can further improve the reflectivity, so that the laser annealing protection plate 1 absorbs less laser energy, and therefore the life span of the laser annealing protection plate 1 can be increased.

Example 1

In this embodiment of the laser annealing protection plate of the present invention, the metal substrate 2 is a molybdenum substrate or a molybdenum alloy substrate, the first protection layer 41 is silicon dioxide, and the second protection layer 42 is titanium dioxide. In addition, the thickness of the first protection layer 41 is 340 nm, and the thickness of the second protection layer 42 is 206 nm.

Example 2

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in embodiment 1, its structure is the same as that of embodiment 1, except that the interface layer 5 is added between the first protective layer 41 and the metal substrate 2 And the thickness of the interface layer 5 is 15 nm.

Example 3

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in embodiment 1, its structure is the same as that of embodiment 1, except that the third protective layer 43 is in close contact with the second protective layer 42, and its The material and thickness of the first protective layer 41 are the same or similar.

Example 4

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in embodiment 1, its structure is the same as that of embodiment 1, except that the metal substrate 2 is replaced with a tungsten substrate or a tungsten alloy substrate.

Example 5

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in embodiment 1, its structure is the same as that of embodiment 1, except that the metal substrate 2 is replaced with a stainless steel substrate.

Example 6

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the material of the second protective layer 42 is replaced with zirconia.

Example 7

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the material of the second protective layer 42 is replaced with alumina.

Example 8

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the material of the second protective layer 42 is replaced with hafnium oxide.

Example 9

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the first protective layer 41 is changed to 330 nm.

Example 10

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the first protective layer 41 is changed to 350 nm.

Example 11

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the second protective layer 42 is changed to 200 nm.

Example 12

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the second protective layer 42 is changed to 220 nm.

Example 13

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the second protective layer 42 is changed to 238 nm.

Example 14

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the interface layer 5 is changed to 20 nm.

Example 15

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in Embodiment 1, its structure is the same as that of Embodiment 1, except that the thickness of the interface layer 5 is changed to 30 nm.

Example 16

In this embodiment of the laser annealing protection plate of the present invention, as disclosed in embodiment 1, its structure is the same as that of embodiment 1, except that four groups of the same or similar to the first protective layer 41 and the second protective layer 41 are added in sequence. The protective layer of the protective layer 42 is in close contact with the second protective layer 42 to form a total of ten protective layers on the metal substrate 2.

Comparative example 1

In the comparative example of the laser annealing protection plate of the present invention, the metal substrate 2 is a pure molybdenum substrate or a molybdenum alloy substrate, and no optical protection layer is provided on the metal substrate 2.

(Manufacturing method of laser annealing protection plate)

In the manufacturing method of the laser annealing protection plate of the present invention, the formation method of the multilayer protective layer 4 is not limited. In this embodiment, physical vapor deposition is used, and it is the manufacturing method of the second embodiment, and the first embodiment And the manufacturing methods of 3 to 15 are the same or similar to the following manufacturing methods.

Step 1 is to first provide a metal substrate 2 to cut the metal substrate 2 into a desired shape so as to facilitate placing the wafer 3 on the metal substrate 2 and enable the metal substrate 2 to perform a protective function.

Step 2 is to form an interface layer 4 on the metal substrate 2, and evacuating the evaporation chamber into a vacuum system to facilitate the physical evaporation, wherein the vacuum degree is 1.33x10 ^-4 Pa at 100 degrees Celsius, with mechanical pumping With the aid of Lu's pump, the vacuum degree is pumped to about 10 Pa, and then the condensing pump is used for high vacuum extraction, and the vacuum degree is in the range of 1.33x10 ² Pa to 1.33x10 ^-1 Pa with a thermal conductivity vacuum gauge Monitor the vacuum degree. If the vacuum degree is in the ^{range of 1 to 1x10 -6} Pa, monitor it with an ion vacuum gauge. The vacuum system can effectively reduce the pollution of the optical film during the manufacturing process and increase the stability of the optical film.

Step 3 is to form a multilayer protective layer 4 including a first protective layer 41 and a second protective layer 42 on the interface layer 5. The second protective layer 42 is in close contact with the first protective layer 41, and the first protective layer 41 and the second protective layer 42 are alternately stacked on the metal substrate 2. The electron gun heating technology is used to make Ti, Vapor deposition sources such as Cr, Al ₂ O ₃ , SiO ₂ , ZrO ₂ , or TiO _{2 are vaporized.} By the heating of the electron gun, the solid vapor deposition source absorbs energy and turns it into a gaseous state, which can be deposited on the metal substrate 2 to form an optical film.

Step 4 is to bombard the metal substrate 2 where the optical film is being deposited with an ion source assisted evaporation system. The ion source provides additional energy for the optical film deposited on the metal substrate 2 so that atoms with insufficient kinetic energy can fine-tune the structure, and The optical film has better density, high reflectivity, and low water absorption, and the optical film is not easily peeled from the metal substrate 2.

In this embodiment of the manufacturing method of the laser annealing protection plate of the present invention, the required vapor deposition source is replaced and the step 3 is repeated to form the first protection layer 41 and the second protection layer 41 and the second layer on the metal substrate 2. The protective layer 42, but is not limited to this.

In this embodiment of the manufacturing method of the laser annealing protection plate of the present invention, the plating pressure is from 1.332×10 ^-4 Pa to 6.67×10 ^-4 Pa, but it is not limited thereto.

In this embodiment of the manufacturing method of the laser annealing protection plate of the present invention, the output power of the electron gun is 5 kW to 10 kW, but it is not limited to this.

In this embodiment of the manufacturing method of the laser annealing protection plate of the present invention, the working temperature is 100 degrees Celsius to 200 degrees Celsius, but it is not limited thereto.

(Test method of laser annealing protection board)

Test the high temperature ability and reliability of the laser annealing protection board

First, because the laser annealing process is a high temperature and high energy environment, the high temperature baking is used to understand the ability and reliability of the laser annealing protection plate 1 to withstand high temperatures, so as to simulate the laser annealing after a period of thermal energy impact. The condition of the protection board 1. In this embodiment, the surface of the metal substrate 2 provided with the optical film is still smooth after being baked in a vacuum oven at 1250 degrees Celsius for 5 minutes. However, if the test is carried out in Comparative Example 1, Comparative Example 1 is a simple metal substrate 2. After baking in a non-vacuum oven at 1050 degrees Celsius, a large number of holes appear on the surface, and the surface is obviously oxidized and uneven, which makes it easy to vaporize. Particle pollution is caused in the process. The metal substrate 2 with the optical film can maintain a mirror-like smooth surface at high temperatures. Therefore, it can be seen that the laser annealing protection plate 1 has excellent high temperature resistance and good reliability.

Test the maximum laser power that the laser annealing protection board can withstand

Secondly, through the CO ₂ laser single point (single pulse) test, which is to bombard the laser annealing protection plate 1 with laser single points (single pulse) of different powers, and test the laser annealing protection plate 1. After testing the laser power to which it was subjected, it was found that after bombardment with a laser power of 200W, the laser annealing protection plate 1 had no holes and the surface was in a complete state. Therefore, it can be seen that the laser annealing protection plate 1 with an optical film can withstand at least a laser power of less than 200W.

Test the reflectivity of the laser annealing protection board

3A and 3B are the reflectance diagrams of the laser annealing protection plate according to another embodiment of the present invention.

Furthermore, as shown in FIGS. 3A and 3B, the tested optical film has a good optical reflection effect. Through proper film thickness control, part of the laser energy can be reflected, and the laser energy absorbed by the laser annealing protection plate 1 can be reduced. In order to achieve the effect of protection. When the laser wavelength is 10600 nm, the reflectance X of the embodiment in FIG. 3A is 91%, and the reflectance Y of the embodiment in FIG. 3B is 91.35%, which can greatly reduce the energy impacted by the laser. The film thickness of the embodiment of FIG. 3A and FIG. 3B is disclosed in Table 1 below.

Table 1 Figure 3A Figure 3B 1 ^st oxide 340 nm 340 nm 2 ^nd oxide 238 nm 206 nm 1 ^st oxide 340 nm 340 nm interlayer 15 nm 15 nm

Test the film adhesion of the laser annealing protection board

Finally, test the adhesion of the optical film according to ASTM D3395 and ISO 2409. Use multiple cutter heads to cross cut the laser annealing protection plate 1 at 90 degrees, and cut 5x5 square grids on the staggered parts, and then use bristles. Brush to remove debris, or use 3M standard test tape to peel off after sticking. The adhesion degree of the optical film on the metal substrate 2 can be known by comparing the adhesion judgment standard. After experiments, it can be known that the optical films directly deposited on the metal substrate 2 of the first protective layer 41 and the second protective layer 42 cannot provide good adhesion, and therefore cannot pass the adhesion test. However, if the interface layer 5 is provided between the metal substrate 2 and the first protective layer 41, the adhesion of the optical film can be improved, and the adhesion test can further increase the laser annealing protective plate 1 Service life. In addition, the laser annealing protection plate 1 after the vacuum baking test at 1250 degrees Celsius is subjected to an adhesion test again, and the optical film with the interface layer 5 can still pass the adhesion test.

The above test is a molybdenum substrate or a molybdenum alloy substrate provided with an optical thin film, and the same method is used for testing, and the material of the metal substrate 2 provided with an optical thin film is replaced with an aluminum substrate or an aluminum alloy substrate, the test results are similar In the embodiment using the molybdenum substrate, it also has good performance and can be applied to the laser annealing protection plate.

(Practical use of laser annealing protection board)

FIG. 1A is a schematic diagram of a laser annealing protection plate according to an embodiment of the present invention.

As shown in FIG. 1A, in this embodiment of the laser annealing protection plate of the present invention, the first substrate 21 has a half-moon-shaped structure, and the second substrate 22 has a half-moon-shaped structure, but it is not limited thereto.

In this embodiment of the laser annealing protection plate of the present invention, the first substrate 21 and the second substrate 22 are of relative design, and the circular through hole 6 is formed in the middle after splicing, but it is not limited to this, so it can be The wafer 3 to be annealed is placed here.

FIG. 1B is a schematic diagram of a laser annealing process according to an embodiment of the invention.

As shown in FIG. 1B, the laser beam 10 is incident at an angle of 75 degrees from the normal method Z. The laser heats the wafer to perform an annealing process to improve the integrity of its crystal structure. However, the laser beam 10 may also cause damage to the devices around the wafer 3 due to refraction or reflection. Therefore, arranging the laser annealing protection plate 1 outside the wafer 3 to be annealed can effectively reduce this problem.

In summary, in the semiconductor manufacturing process, the laser annealing protection plate 1 can be arranged on the outside of the wafer 3, and it has been tested that the laser annealing protection plate 1 can effectively resist the high temperature and high temperature during laser annealing in actual use. High-energy laser bombardment. In addition, the laser annealing protection plate 1 can also partially reflect the laser energy through the high reflectivity of the optical film, further reducing the absorbed laser energy, thereby increasing the service life of the laser annealing protection plate 1 and reducing its consumption Rate, thereby reducing production costs. Therefore, when the wafer 3 is subjected to laser annealing treatment, the effect of protecting devices other than the wafer 3 can be achieved by setting the laser annealing protective plate 1.

Although the present invention has been illustrated through multiple embodiments, it should be understood that many other possible modifications and changes can be made as long as they do not deviate from the spirit of the present invention and those claimed in the scope of the patent application.

1: Laser annealing protection plate 2: Metal substrate 3: Wafer 4: Multilayer protection layer 5: Interface layer 6: Circular through hole 10: CO ₂ laser beam 21: First substrate 22: Second substrate 41: No. A protective layer 42: the second protective layer 43: the third protective layer X: reflectivity Y: reflectivity Z: normal direction

FIG. 1A is a schematic diagram of a laser annealing protection plate according to an embodiment of the present invention. FIG. 1B is a schematic diagram of a laser annealing process according to an embodiment of the invention. 2A is a cross-sectional view of a laser annealing protection plate according to another embodiment of the invention. 2B is a cross-sectional view of a laser annealing protection plate according to another embodiment of the present invention. 2C is a cross-sectional view of a laser annealing protection plate according to another embodiment of the present invention. 3A and 3B are the reflectance diagrams of the laser annealing protection plate according to another embodiment of the present invention.

1: Laser annealing protection board

2: Metal substrate

3: Wafer

6: Round through hole

21: The first substrate

22: second substrate

Claims (17)

A laser annealing protection board, including: A metal substrate, which is a high temperature resistant substrate, an aluminum substrate, an aluminum alloy substrate, or a combination thereof; and A multilayer protection layer includes a first protection layer and a second protection layer, wherein the first protection layer is an oxide layer, a fluoride layer, or a combination thereof, the second protection layer is an oxide layer, and the second protection layer is an oxide layer. Two protective layers are closely connected to the first protective layer, the first protective layer and the second protective layer are alternately stacked on the metal substrate, and the first protective layer is located on the metal substrate. For example, the laser annealing protection board of the first item in the scope of the patent application further includes an interface layer, wherein the interface layer is located between the first protection layer and the metal substrate. For example, the laser annealing protection plate of the first item in the scope of patent application, wherein the first protection layer is silicon dioxide, magnesium fluoride, or a combination thereof. For example, the laser annealing protection plate of the first item in the scope of patent application, wherein the second protection layer is titanium dioxide, zirconium oxide, aluminum oxide, hafnium oxide, tantalum oxide, or a combination thereof. For example, the laser annealing protection plate of item 2 in the scope of patent application, wherein the interface layer is aluminum oxide, chromium, titanium, or a combination thereof. For example, the laser annealing protection plate of item 1 in the scope of patent application, wherein the metal substrate is molybdenum, tungsten, tantalum, stainless steel, aluminum, or alloys thereof. For example, the laser annealing protection plate of the first item in the scope of patent application, wherein the first protection layer has a first refractive index nL, and it is between 1.3 and 1.45. For example, the laser annealing protection plate of the first item in the scope of patent application, wherein the second protection layer has a first refractive index nH, and it is between 2 and 2.6. For example, the second laser annealing protection plate in the scope of patent application, wherein the thickness of the interface layer is between 10nm and 50nm. For example, the laser annealing protection plate of item 1 in the scope of patent application, wherein the thickness of the first protection layer is in the range of 200 nm to 500 nm. For example, the laser annealing protection plate of item 1 in the scope of patent application, wherein the thickness of the second protection layer is in the range of 150 nm to 300 nm A manufacturing method of laser annealing protection plate, including the following steps: Provide a metal substrate; Forming an interface layer on the metal substrate; and On the interface layer, a multilayer protection layer including a first protection layer and a second protection layer is formed, wherein the second protection layer is in close contact with the first protection layer, the first protection layer and the second protection layer An alternate stacked arrangement is formed on the metal substrate. Such as the manufacturing method of item 12 in the scope of the patent application, wherein the formation of the multilayer protective layer is by physical vapor deposition, sputtering, chemical vapor deposition, or a combination thereof. Such as the manufacturing method of item 12 in the scope of patent application, wherein the metal substrate is molybdenum, tungsten, tantalum, stainless steel, aluminum, or alloys thereof. Such as the manufacturing method of item 12 in the scope of patent application, wherein the first protective layer is silicon dioxide, magnesium fluoride, or a combination thereof. Such as the manufacturing method of item 12 in the scope of the patent application, wherein the second protective layer is titanium dioxide, zirconium oxide, aluminum oxide, hafnium oxide, tantalum oxide, or a combination thereof. Such as the manufacturing method of item 12 of the scope of patent application, wherein the interface layer is aluminum oxide, chromium, titanium, or a combination thereof.

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