TW202102722A - Advanced treated electrodeposited copper foil having long and island-shaped structures and copper clad laminate using the same - Google Patents

Advanced treated electrodeposited copper foil having long and island-shaped structures and copper clad laminate using the same Download PDF

Info

Publication number
TW202102722A
TW202102722A TW109120638A TW109120638A TW202102722A TW 202102722 A TW202102722 A TW 202102722A TW 109120638 A TW109120638 A TW 109120638A TW 109120638 A TW109120638 A TW 109120638A TW 202102722 A TW202102722 A TW 202102722A
Authority
TW
Taiwan
Prior art keywords
copper
copper foil
micro
crystals
roughened surface
Prior art date
Application number
TW109120638A
Other languages
Chinese (zh)
Other versions
TWI736325B (en
Inventor
宋雲興
李思賢
許紘瑋
高羣祐
Original Assignee
金居開發股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 金居開發股份有限公司 filed Critical 金居開發股份有限公司
Priority to JP2020106379A priority Critical patent/JP2021021137A/en
Priority to US16/905,934 priority patent/US11408087B2/en
Publication of TW202102722A publication Critical patent/TW202102722A/en
Application granted granted Critical
Publication of TWI736325B publication Critical patent/TWI736325B/en

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0242Structural details of individual signal conductors, e.g. related to the skin effect
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/384Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0302Properties and characteristics in general
    • H05K2201/0317Thin film conductor layer; Thin film passive component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

An advanced reverse-treated electrodeposited copper foil having long and island-shaped microstructures and a copper clad laminate using the same are provided. The advanced reverse-treated electrodeposited copper foil includes a micro-roughened surface. The micro-roughened surface has a plurality of copper crystals, a plurality of copper crystal whiskers and a plurality of copper crystal groups which form into a long and island-shaped pattern. Therefore, the advanced reverse-treated electrodeposited copper foil has good bonding strength relative to a resin-based composite material, and can increase signal integrity and reduce signal transmission loss so as to meet the requirements of 5G applications.

Description

具有長島狀微結構的進階反轉電解銅箔及應用其的銅箔基板Advanced reverse electrolytic copper foil with long island-like microstructure and copper foil substrate using the same

本發明涉及一種電解銅箔,特別是涉及一種具有長島狀微結構的進階反轉電解銅箔,以及應用其的銅箔基板。The invention relates to an electrolytic copper foil, in particular to an advanced reverse electrolytic copper foil with a long island-shaped microstructure, and a copper foil substrate using the same.

隨著資訊和電子產業的發展,高頻高速訊號傳輸已成為現代電路設計和製造的一環。為了符合電子產品對於高頻高速訊號傳輸的需求,銅箔基板(copper clad laminates, CCL)需要防止高頻訊號在傳遞時產生過度的插入損耗(insertion loss),以具有良好的訊號完整性(signal integrity, SI)。其中,銅箔基板中的銅箔的插入損耗表現與其表面處理面的粗糙度具有高度關聯,原因在於高頻高速訊號傳輸時將產生集膚效應(Skin effect):導體內部的電流分布不均勻的一種現象。隨著與導體表面的距離逐漸增加,導體內的電流密度呈指數遞減,即導體內的電流會集中在導體的表面,因此導體表面處理面的表面積愈小愈有利於高頻高速訊號傳輸;然而,表面積愈大愈有利於剝離強度,這與訊號完整性是相衝突的,進一步而言,在銅箔的表面形貌越平坦,其訊號完整性越好,而銅箔的表面積愈大,其剝離強度越好。因此,本技術領域亟待研究出可以同時兼顧訊號完整性以及剝離強度的銅箔基板。With the development of the information and electronic industries, high-frequency and high-speed signal transmission has become a part of modern circuit design and manufacturing. In order to meet the needs of electronic products for high-frequency and high-speed signal transmission, copper clad laminates (CCL) need to prevent excessive insertion loss during transmission of high-frequency signals in order to have good signal integrity (signal integrity). integrity, SI). Among them, the insertion loss performance of the copper foil in the copper foil substrate is highly correlated with the roughness of the surface treatment surface. The reason is that the skin effect will occur during high-frequency and high-speed signal transmission: the current distribution inside the conductor is uneven A phenomenon. As the distance from the surface of the conductor gradually increases, the current density in the conductor decreases exponentially, that is, the current in the conductor is concentrated on the surface of the conductor. Therefore, the smaller the surface area of the conductor surface treatment surface, the more conducive to high-frequency and high-speed signal transmission; however, , The larger the surface area, the better the peel strength, which is in conflict with the signal integrity. Furthermore, the flatter the surface of the copper foil, the better the signal integrity, and the larger the surface area of the copper foil. The peel strength is better. Therefore, the technical field urgently needs to develop a copper foil substrate that can simultaneously take into account signal integrity and peel strength.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種具有長島狀微結構的進階反轉電解銅箔,其可以應用於高頻高速的5G領域,並且可以保持目標應用所需要的特性,例如保持電解銅箔的剝離強度(peel strength)。本發明還提供一種使用此進階反轉電解銅箔的銅箔基板,可作為高頻高速基板。The technical problem to be solved by the present invention is to provide an advanced reverse electrolytic copper foil with a long island-like microstructure in view of the deficiencies of the prior art, which can be applied to the high-frequency and high-speed 5G field, and can maintain the characteristics required by the target application , For example, to maintain the peel strength of the electrolytic copper foil (peel strength). The invention also provides a copper foil substrate using the advanced reverse electrolytic copper foil, which can be used as a high-frequency and high-speed substrate.

為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種具有長島狀微結構的進階反轉電解銅箔,其包括一微粗糙化處理面。所述微粗糙化處理面具有多個呈非均勻性分佈的銅結晶,其中不同數量的所述銅結晶堆疊在一起以形成各自的銅晶鬚,且不同數量的所述銅晶鬚團聚在一起以形成各自的銅結晶團。在掃描式電子顯微鏡以35度傾斜角與10,000倍放大倍率的觀察下,所述微粗糙化處理面具有以下結構特徵:(1)至少十個長為250 nm且寬為250 nm的第一平滑區域;(2)至少一個長為500 nm且寬為500 nm的第二平滑區域;(3)至少一個長為1,500 nm以上的長島狀微結構,且所述長島狀微結構中有至少三個所述銅結晶及/或銅晶鬚;以及(4) 至少兩個長為1,000 nm以上的線條狀無銅區域。In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide an advanced reverse electrolytic copper foil with a long island-like microstructure, which includes a micro-roughened surface. The micro-roughened surface has a plurality of copper crystals distributed non-uniformly, wherein different numbers of the copper crystals are stacked together to form respective copper whiskers, and different numbers of the copper whiskers are agglomerated together To form their respective copper crystal clusters. Under the observation of a scanning electron microscope with an inclination angle of 35 degrees and a magnification of 10,000 times, the micro-roughened surface has the following structural characteristics: (1) At least ten first smooth surfaces with a length of 250 nm and a width of 250 nm (2) at least one second smooth region with a length of 500 nm and a width of 500 nm; (3) at least one long island-like microstructure with a length of 1,500 nm or more, and there are at least three of the long island-like microstructures The copper crystals and/or copper whiskers; and (4) at least two linear copper-free regions with a length of 1,000 nm or more.

為了解決上述的技術問題,本發明所採用的另外一技術方案是提供一種銅箔基板,其包括一基板以及一進階反轉電解銅箔,所述進階反轉電解銅箔設置於所述基板上,且具有一微粗糙化處理面接合於所述基板的一表面。所述微粗糙化處理面具有多個呈非均勻性分佈的銅結晶,其中不同數量的所述銅結晶堆疊在一起以形成各自的銅晶鬚,且不同數量的所述銅晶鬚團聚在一起以形成各自的銅結晶團。在掃描式電子顯微鏡以35度傾斜角與10,000倍放大倍率的觀察下,所述微粗糙化處理面具有以下結構特徵:(1)至少十個長為250 nm且寬為250 nm的第一平滑區域;(2)至少一個長為500 nm且寬為500 nm的第二平滑區域;(3)至少一個長為1,500 nm以上的長島狀微結構,且所述長島狀微結構中有至少三個所述銅結晶及/或銅晶鬚;以及(4) 至少兩個長為1,000 nm以上的線條狀無銅區域。In order to solve the above-mentioned technical problems, another technical solution adopted by the present invention is to provide a copper foil substrate, which includes a substrate and an advanced reverse electrolytic copper foil, and the advanced reverse electrolytic copper foil is disposed on the On the substrate, there is a micro-roughening treatment surface bonded to a surface of the substrate. The micro-roughened surface has a plurality of copper crystals distributed non-uniformly, wherein different numbers of the copper crystals are stacked together to form respective copper whiskers, and different numbers of the copper whiskers are agglomerated together To form their respective copper crystal clusters. Under the observation of a scanning electron microscope with an inclination angle of 35 degrees and a magnification of 10,000 times, the micro-roughened surface has the following structural characteristics: (1) At least ten first smooth surfaces with a length of 250 nm and a width of 250 nm (2) at least one second smooth region with a length of 500 nm and a width of 500 nm; (3) at least one long island-like microstructure with a length of 1,500 nm or more, and there are at least three of the long island-like microstructures The copper crystals and/or copper whiskers; and (4) at least two linear copper-free regions with a length of 1,000 nm or more.

在本發明的一實施例中,所述第一平滑區域與所述第二平滑區域內都不存在所述銅結晶。In an embodiment of the present invention, the copper crystals do not exist in the first smooth area and the second smooth area.

在本發明的一實施例中,每一個所述銅晶鬚具有一頂部銅結晶。In an embodiment of the present invention, each of the copper whiskers has a top copper crystal.

在本發明的一實施例中,多個所述頂部銅結晶呈錐狀、棒狀及/或球狀。In an embodiment of the present invention, a plurality of the top copper crystals are cone-shaped, rod-shaped, and/or spherical.

在本發明的一實施例中,所述微粗糙化處理面的表面粗糙度(Rz jis94)小於2.1微米。In an embodiment of the present invention, the surface roughness (Rz jis94) of the micro-roughened surface is less than 2.1 microns.

在本發明的一實施例中,所述微粗糙化處理面還包括多個凸峰以及位於多個所述凸峰之間的多個凹槽,且多個所述銅結晶、多個所述銅晶鬚與多個所述銅結晶團對應形成於多個所述凸峰上。In an embodiment of the present invention, the micro-roughened surface further includes a plurality of convex peaks and a plurality of grooves located between the plurality of convex peaks, and a plurality of the copper crystals and a plurality of the copper Whiskers are formed on the plurality of convex peaks corresponding to the plurality of copper crystal clusters.

在本發明的一實施例中,每一個所述凹槽具有一U形或V形的剖面形貌。In an embodiment of the present invention, each of the grooves has a U-shaped or V-shaped cross-sectional profile.

本發明的其中一有益效果在於,本發明的進階反轉銅箔,其能通過“微粗糙化處理面具有多個呈非均勻性分佈的銅結晶,而具有至少十個長為250 nm且寬為250 nm的第一平滑區域、至少一個長為500 nm且寬為500 nm的第二平滑區域以及至少一個長為1,500 nm以上的長島狀微結構,且所述長島狀微結構中有至少三個所述銅結晶及/或銅晶鬚”的技術手段,以在不損害剝離強度的前提下減少插入損耗(insertion loss),提高訊號完整性,以適應訊號傳輸的高頻、高速化,滿足5G應用的需求。One of the beneficial effects of the present invention is that the advanced inverted copper foil of the present invention can have at least ten copper crystals with a length of 250 nm and A first smooth region with a width of 250 nm, at least one second smooth region with a length of 500 nm and a width of 500 nm, and at least one long island-like microstructure with a length of 1,500 nm or more, and at least one of the long island-like microstructures The three technical means of “copper crystals and/or copper whiskers” can reduce insertion loss and improve signal integrity without compromising the peel strength, so as to adapt to the high frequency and high speed of signal transmission. Meet the needs of 5G applications.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

以下是通過特定的具體實施例來說明本發明所公開有關“進階反轉電解銅箔及應用其的銅箔基板”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。The following are specific examples to illustrate the implementation of the "advanced reverse electrolytic copper foil and copper foil substrate using the same" disclosed in the present invention. Those skilled in the art can understand the present invention from the content disclosed in this specification. Advantages and effects. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual size, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

參閱圖1至圖3所示,本發明提供一種銅箔基板C,其包括一基板1以及至少一設置於基板1上的進階反轉電解銅箔2。在本實施例中,進階反轉電解銅箔2的數量為兩個,其各具有一不平整的微粗糙化處理面20與基板1的表面接合,但本發明並不限制於此。在其他實施例中,銅箔基板C可以只包括一個進階反轉電解銅箔2。Referring to FIGS. 1 to 3, the present invention provides a copper foil substrate C, which includes a substrate 1 and at least one advanced reverse electrolytic copper foil 2 disposed on the substrate 1. In this embodiment, the number of advanced reverse electrolytic copper foils 2 is two, each of which has an uneven micro-roughened surface 20 to be bonded to the surface of the substrate 1, but the present invention is not limited to this. In other embodiments, the copper foil substrate C may only include one advanced reverse electrolytic copper foil 2.

為了降低插入損耗(insertion loss),基板1可以低損耗因子(dissipation factor, Df)的材料形成;基板1在10千兆赫茲(GHz)頻率的Df可為小於或等於0.015,優選為小於或等於0.010,且更優選為小於或等於0.005。In order to reduce insertion loss (insertion loss), the substrate 1 may be formed of a material with a low dissipation factor (Df); the Df of the substrate 1 at a frequency of 10 gigahertz (GHz) may be less than or equal to 0.015, preferably less than or equal to 0.010, and more preferably 0.005 or less.

進一步而言,基板1是以一樹脂基複合材料(即預浸材料,prepreg)形成,其是將一基材含浸於一合成樹脂後再固化而成的複合材料。基材的具體例包括酚醛棉紙、棉紙、樹脂製纖維布、樹脂製纖維不織布、玻璃板、玻璃織布、或玻璃不織布;合成樹脂的具體例包括環氧樹脂、聚酯樹脂、聚醯亞胺樹脂、氰酸酯樹脂、雙馬來醯亞胺三嗪樹脂、聚苯醚樹脂、或酚樹脂,且合成樹脂可以形成單層或多層結構。樹脂基複合材料可以使用中損耗、低損耗、極低損耗、或超低損耗材料,以上術語為本領預的技術人員所熟知,具體可舉出以下市售產品:EM890、EM890(K)、EM891(K) 、EM528、EM526、IT170GRA1、IT958G、IT968G、IT150DA、S7040G、S7439G、S6GX、TU863(+)、TU883(A,SP)、MEGTRON 4、MEGTRON 6,MEGTRON 7及MEGTRON 8。然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。Furthermore, the substrate 1 is formed of a resin-based composite material (ie, prepreg), which is a composite material formed by impregnating a substrate in a synthetic resin and then curing. Specific examples of the substrate include phenolic cotton paper, cotton paper, resin fiber cloth, resin fiber non-woven fabric, glass plate, glass woven fabric, or glass non-woven fabric; specific examples of synthetic resin include epoxy resin, polyester resin, and polyamide Imine resin, cyanate ester resin, bismaleimide triazine resin, polyphenylene ether resin, or phenol resin, and the synthetic resin may form a single-layer or multi-layer structure. Resin-based composite materials can use medium-loss, low-loss, very low-loss, or ultra-low-loss materials. The above terms are well known to those skilled in the art. Specifically, the following commercially available products can be cited: EM890, EM890(K), EM891 (K), EM528, EM526, IT170GRA1, IT958G, IT968G, IT150DA, S7040G, S7439G, S6GX, TU863(+), TU883(A, SP), MEGTRON 4, MEGTRON 6, MEGTRON 7 and MEGTRON 8. However, the above-mentioned example is only one of the feasible embodiments and is not intended to limit the present invention.

參閱圖2及圖3所示,進階反轉電解銅箔2的微粗糙化處理面20是通過電沉積銅微粗糙化處理而形成;值得一提的是,微粗糙化處理面20具有多個銅結晶21、多個銅晶鬚W及多個銅結晶團G,它們呈非均勻性分佈,即非均勻地沉積於銅箔表面上。每一個銅晶鬚W由兩個或更多的銅結晶21堆疊而成,且不同數量的銅結晶21堆疊在一起以形成各自的銅晶鬚W,其中每一個銅晶鬚W具有一呈錐狀、棒狀或球狀的頂部銅結晶211,優選為球狀。每一個銅結晶團G由兩個或更多的銅晶鬚W團聚而成,且不同數量的銅晶鬚W團聚在一起以形成各自的銅結晶團G。2 and 3, the micro-roughened surface 20 of the advanced reverse electrolytic copper foil 2 is formed by electrodeposited copper micro-roughening treatment; it is worth mentioning that the micro-roughened surface 20 has more The copper crystals 21, the copper whiskers W, and the copper crystal clusters G are distributed non-uniformly, that is, they are non-uniformly deposited on the surface of the copper foil. Each copper whisker W is formed by stacking two or more copper crystals 21, and different numbers of copper crystals 21 are stacked together to form respective copper whiskers W, wherein each copper whisker W has a cone The top copper crystal 211 in a shape, rod shape, or spherical shape is preferably spherical. Each copper crystal group G is formed by agglomeration of two or more copper whiskers W, and different numbers of copper whiskers W agglomerate together to form respective copper crystal groups G.

在一些實施例中,多個銅晶鬚W的平均高度可小於3微米,優選為小於1.8微米,且更優選為小於1.0微米;另外,多個銅結晶團G的平均高度可小於3.5微米,優選為小於1.8微米,且更優選為小於1.0微米。在一些實施例中,每一個銅晶鬚W可包括最多25個銅結晶21,優選為最多12個銅結晶21,更優選為最多10個銅結晶21,且特別優選為最多8個銅結晶21。在一些實施例中,多個銅結晶21的平均外徑可小於0.5微米,優選為0.05至0.5微米,且更優選為0.1至0.4微米。In some embodiments, the average height of the plurality of copper whiskers W may be less than 3 microns, preferably less than 1.8 microns, and more preferably less than 1.0 microns; in addition, the average height of the plurality of copper crystal groups G may be less than 3.5 microns, It is preferably less than 1.8 micrometers, and more preferably less than 1.0 micrometers. In some embodiments, each copper whisker W may include up to 25 copper crystals 21, preferably up to 12 copper crystals 21, more preferably up to 10 copper crystals 21, and particularly preferably up to 8 copper crystals 21 . In some embodiments, the average outer diameter of the plurality of copper crystals 21 may be less than 0.5 micrometers, preferably 0.05 to 0.5 micrometers, and more preferably 0.1 to 0.4 micrometers.

值得一提的是,不同於既有的電解銅箔,其中多個銅結晶是均勻地分佈於銅箔表面上,僅有少部分聚集在一起;本發明的進階反轉電解銅箔2的表面上,除了有非均勻性分佈的多個銅結晶21之外,還有不同數量的銅結晶21所分別形成的多個銅晶鬚W以及不同數量的銅晶鬚W所分別形成的銅結晶團G,使得銅箔的表面形貌有明顯的凹凸起伏。藉此,本發明的進階反轉電解銅箔2能夠在維持良好剝離強度的前提下,提高訊號完整性並抑制插入損耗(insertion loss),以適應訊號傳輸的高頻、高速化。此外,微粗糙化處理面20的表面粗糙度(Rz jis)小於等於2.1微米,此對線寬和線距的微縮有所貢獻。It is worth mentioning that, different from the existing electrolytic copper foil, a plurality of copper crystals are evenly distributed on the surface of the copper foil, and only a small part are gathered together; the advanced reverse electrolytic copper foil 2 of the present invention On the surface, in addition to the multiple copper crystals 21 with non-uniform distribution, there are multiple copper whiskers W formed by different numbers of copper crystals 21 and copper crystals formed by different numbers of copper whiskers W. Group G makes the surface morphology of the copper foil obvious concave and convex. Thereby, the advanced reverse electrolytic copper foil 2 of the present invention can improve signal integrity and suppress insertion loss while maintaining good peel strength, so as to adapt to the high frequency and high speed of signal transmission. In addition, the surface roughness (Rz jis) of the micro-roughened surface 20 is less than or equal to 2.1 micrometers, which contributes to the reduction of the line width and line pitch.

如圖3所示,微粗糙化處理面20還包括多個凸峰22及多個位於凸峰22之間的凹槽23,且多個銅結晶21、多個銅晶鬚W與多個銅結晶團G對應形成於多個凸峰22上。其中,每一個凹槽23具有U形或V形的剖面形貌。在將本發明的進階電解銅箔2壓合於一樹脂基複合材料時,微粗糙化處理面20可以接收更多個樹脂材料,以增加銅箔與基材之間的結合力。As shown in FIG. 3, the micro-roughened surface 20 further includes a plurality of convex peaks 22 and a plurality of grooves 23 located between the convex peaks 22, and a plurality of copper crystals 21, a plurality of copper whiskers W, and a plurality of copper The crystal cluster G is formed on the plurality of convex peaks 22 correspondingly. Wherein, each groove 23 has a U-shaped or V-shaped cross-sectional profile. When pressing the advanced electrolytic copper foil 2 of the present invention to a resin-based composite material, the micro-roughened surface 20 can receive more resin materials to increase the bonding force between the copper foil and the substrate.

[製備例][Preparation example]

複參閱圖2,並配合圖4所示,本發明的進階反轉電解銅箔2的製備方法可以是對一生箔(raw foil)的暗面(matte side)進行電鍍銅微粗糙化處理而獲得,其中經過處理的亮面即形成微粗糙化處理面20。電鍍銅微粗糙化處理可以採用習知設備進行,例如:連續式電解設備或批次式電解設備,並以5 m/min至20 m/min的生產速度、20o C至60o C的生產溫度與預定的電流密度來實現。值得一提的是,亦可以預先使用鋼刷將生箔的暗面刻出刮痕,藉以形成不定向且為長島狀圖案的凹槽,但不以此為限。在一些實施例中,可以對生箔的亮面(shiny side)進行電鍍銅微粗糙化處理,使其形成微粗糙化處理面20。電鍍銅微粗糙化處理的條件如表1所示。Referring again to FIG. 2 and in conjunction with FIG. 4, the preparation method of the advanced reverse electrolytic copper foil 2 of the present invention may be to perform copper electroplating micro-roughening treatment on the matte side of the raw foil. Obtained, the processed bright surface forms the micro-roughened surface 20. Electroplating copper micro-roughening treatment can be carried out with conventional equipment, such as continuous electrolysis equipment or batch electrolysis equipment, and production at a production speed of 5 m/min to 20 m/min and 20 o C to 60 o C Temperature and predetermined current density to achieve. It is worth mentioning that a steel brush can also be used in advance to carve scratches on the dark surface of the raw foil, so as to form a non-oriented groove with a long island pattern, but it is not limited to this. In some embodiments, the shiny side of the green foil may be subjected to copper electroplating micro-roughening treatment to form the micro-roughening treatment surface 20. The conditions of the electroplated copper micro-roughening treatment are shown in Table 1.

參閱圖4所示,在本製備例中,所使用的處理設備為連續式電解設備3,其包括一送料輥31、一收料輥32、多個電解槽33、多個電解輥組34及多個輔助輥組35;多個電解槽33設置於送料輥31與收料輥32之間,用以盛裝相同或不同配方的含銅鍍液,且每一個電解槽33內設有一組電極331(如白金電極);多個電解輥組34分別設置於多個電解槽33上方,多個輔助輥組35分別設置於多個電解槽33內,多個電解輥組34與多個輔助輥組35能帶動生箔以一定的速度依序經過多個電解槽33內的鍍液;每一個電解槽33內的電極331與相對應的電解輥組34共同電性連接一外部電源(圖未示出),用以對相對應的鍍液進行電解,而於銅箔上附加所需功效。Referring to Figure 4, in this preparation example, the processing equipment used is a continuous electrolysis equipment 3, which includes a feed roller 31, a take-up roller 32, a plurality of electrolytic tanks 33, a plurality of electrolytic roller groups 34 and A plurality of auxiliary roller groups 35; a plurality of electrolytic tanks 33 are arranged between the feeding roller 31 and the receiving roller 32 to contain copper-containing plating solutions of the same or different formulations, and each electrolytic tank 33 is provided with a set of electrodes 331 (Such as platinum electrodes); a plurality of electrolytic roller groups 34 are respectively arranged above the plurality of electrolytic tanks 33, a plurality of auxiliary roller groups 35 are respectively arranged in a plurality of electrolytic tanks 33, a plurality of electrolytic roller groups 34 and a plurality of auxiliary roller groups 35 can drive the raw foil to pass through the plating solution in multiple electrolytic tanks 33 in sequence at a certain speed; the electrode 331 in each electrolytic tank 33 and the corresponding electrolytic roller set 34 are electrically connected to an external power source (not shown in the figure) Out), used to electrolyze the corresponding plating solution, and add required effects to the copper foil.

實際應用時,含銅電鍍液內含有銅離子、酸,以及金屬添加劑。銅離子的來源可以是硫酸銅、硝酸銅或其組合。酸的具體例包括硫酸、硝酸或其組合。金屬添加劑的具體例包括鈷、鐵、鋅或其組合。此外,含銅鍍液還可以依照需求進一步添加習知的添加劑,例如:明膠、有機氮化物、羥乙基纖維素(hydroxyethyl cellulose, HEC)、聚乙二醇(Poly(ethylene glycol), PEG)、3-巰基-1-丙烷磺酸鈉(Sodium 3-mercaptopropanesulphonate, MPS)、聚二硫二丙烷磺酸鈉(Bis-(sodium sulfopropyl)-disulfide, SPS),或硫脲基化合物。然而,上述所舉的例子只是其中一可行的實施方式,而並非用以限定本發明。In practical applications, the copper-containing electroplating solution contains copper ions, acid, and metal additives. The source of copper ions may be copper sulfate, copper nitrate or a combination thereof. Specific examples of the acid include sulfuric acid, nitric acid, or a combination thereof. Specific examples of metal additives include cobalt, iron, zinc, or a combination thereof. In addition, the copper-containing plating solution can be further added with conventional additives as required, such as gelatin, organic nitrogen compounds, hydroxyethyl cellulose (HEC), polyethylene glycol (Poly(ethylene glycol), PEG) , Sodium 3-mercaptopropanesulphonate (MPS), Bis-(sodium sulfopropyl)-disulfide (SPS), or thiourea-based compounds. However, the above-mentioned example is only one of the feasible implementation manners, and is not intended to limit the present invention.

值得一提的是,前述的電鍍銅微粗糙化處理不僅可以用於反轉銅箔的生產,也可以用於高溫延展(High Temperature Elongation, HTE)銅箔或極低粗糙度(Very Low Profile, VLP)銅箔的生產。It is worth mentioning that the aforementioned electroplated copper micro-roughening treatment can not only be used for the production of inverted copper foil, but also can be used for High Temperature Elongation (HTE) copper foil or Very Low Profile (Very Low Profile, VLP) production of copper foil.

[性能評價1][Performance Evaluation 1]

實施例1為本發明的具有長島狀微結構的進階反轉電解銅箔(為方便說明,下稱“長島狀微結構銅箔”或“ULVLP銅箔”),其是通過前述的電鍍銅微粗糙化處理而獲得,各階段的製備條件顯示於下表1中,銅箔的表面形貌如圖5、圖6及圖7所示。圖5、圖6及圖7都是使用Hitachi S-3400N掃描式電子顯微鏡(SEM)以傾斜角度35度進行拍攝而獲得;圖5為放大倍率1,000倍的SEM影像圖,圖6為放大倍率3,000倍的SEM影像圖,圖7為放大倍率10,000倍的SEM影像圖。Example 1 is the advanced reverse electrolytic copper foil with long island-like microstructures of the present invention (for convenience of description, hereinafter referred to as "long island-like microstructure copper foil" or "ULVLP copper foil"), which is obtained by the aforementioned electroplating copper It is obtained by micro-roughening treatment, the preparation conditions of each stage are shown in Table 1 below, and the surface morphology of the copper foil is shown in Figs. 5, 6 and 7. Figure 5, Figure 6 and Figure 7 are all captured using Hitachi S-3400N Scanning Electron Microscope (SEM) at an inclination angle of 35 degrees; Figure 5 is an SEM image with a magnification of 1,000 times, and Figure 6 is a magnification of 3,000. SEM image of 10,000 times magnification, and Figure 7 is an SEM image of 10,000 times magnification.

表1 鍍液條件   第一電鍍 第二電鍍 第三電鍍 第四電鍍 第五電鍍 第六電鍍 第七電鍍 第一微量金屬電鍍 第二微量金屬電鍍 第三微量金屬電鍍 Silane 金屬離子 Cu+2 Cu+2 Cu+2 Cu+2 Cu+2 Cu+2 Cu+2 Ni+2 Zn+2 Cr+6 N/A 金屬濃度  (g/L) 5.0~10 66~80 66~80 5.0~10 5.0~10 66~80 66~80 17~20 2~4 1~3 N/A 氯 (ppm) >3 >3 >3 >3 >3 >3 >3 >3 >3 >3 >3 酸濃度 (g/L) 硫酸 90~100 硫酸 60~75 硫酸 60~75 硫酸 90~100 硫酸 90~100 硫酸 60~75 硫酸 60~75 磷酸 3~6 硼酸 10~25 磷酸 0.1~2.0 N/A 微量金屬 (Ni, Pd, Ag,W ….) (ppm或mg/L) 180~220 30~40 30~40 180~220 180~220 30~40 30~40 100~200 100~200 100~200 N/A 時間(Sec) 1.69 2.06 2.06 1.69 1.69 2.06 2.06 2.25 2.06 2.25 3 溫度(℃)(±5℃) 30 45 45 30 30 45 45 28 30 40 40 PH >1.5 >1.5 >1.5 >1.5 >1.5 >1.5 >1.5 3~4 4~5 3~4 5~7 實施例1 電流密度 (A/dm2 )(±10%) 0.01 13.37 13.37 21.24 21.24 4.01 0.01 1.1 0.6 0.6 N/A 實施例2 電流密度 (A/dm2 )(±10%) 0.01 15.00 15.00 16.00 16.00 4.01 0.01 1.1 0.6 0.6 N/A Table 1 Plating bath conditions The first plating Second plating Third plating Fourth plating Fifth plating Sixth plating Seventh plating The first trace metal plating Second trace metal plating The third trace metal plating Silane Metal ion Cu +2 Cu +2 Cu +2 Cu +2 Cu +2 Cu +2 Cu +2 Ni +2 Zn +2 Cr +6 N/A Metal concentration (g/L) 5.0~10 66~80 66~80 5.0~10 5.0~10 66~80 66~80 17~20 2~4 1~3 N/A Chlorine (ppm) >3 >3 >3 >3 >3 >3 >3 >3 >3 >3 >3 Acid concentration (g/L) Sulfuric acid 90~100 Sulfuric acid 60~75 Sulfuric acid 60~75 Sulfuric acid 90~100 Sulfuric acid 90~100 Sulfuric acid 60~75 Sulfuric acid 60~75 Phosphoric acid 3~6 Boric acid 10~25 Phosphoric acid 0.1~2.0 N/A Trace metals (Ni, Pd, Ag, W ….) (ppm or mg/L) 180~220 30~40 30~40 180~220 180~220 30~40 30~40 100~200 100~200 100~200 N/A Time (Sec) 1.69 2.06 2.06 1.69 1.69 2.06 2.06 2.25 2.06 2.25 3 Temperature (℃)(±5℃) 30 45 45 30 30 45 45 28 30 40 40 PH >1.5 >1.5 >1.5 >1.5 >1.5 >1.5 >1.5 3~4 4~5 3~4 5~7 Example 1 Current density (A/dm 2 ) (±10%) 0.01 13.37 13.37 21.24 21.24 4.01 0.01 1.1 0.6 0.6 N/A Example 2 Current density (A/dm 2 ) (±10%) 0.01 15.00 15.00 16.00 16.00 4.01 0.01 1.1 0.6 0.6 N/A

從圖5及圖6中可以看出,實施例1的反轉銅箔中,多個銅結晶21、銅晶鬚W與銅結晶團G構成一高低起伏的長島狀圖案。此外,從圖7中可以看出,實施例1的長島狀微結構銅箔的微粗糙化處理面具有以下結構特徵:(1)至少十個長為250 nm且寬為250 nm的第一平滑區域20a,第一平滑區域20a的面積相當於250 nm × 250 nm;(2)至少一個長為500 nm且寬為500 nm的第二平滑區域20b,第二平滑區域20b的面積相當於500 nm × 500 nm;(3)至少一個長為1,500 nm以上的長島狀微結構20c,且所述長島狀微結構20c中有至少三個所述銅結晶及/或銅晶鬚;以及(4) 至少兩個長為1,000 nm以上的線條狀無銅區域20d。結構特徵(1)及(2)有助於降低銅箔表面積。It can be seen from FIGS. 5 and 6 that, in the inverted copper foil of Example 1, a plurality of copper crystals 21, copper whiskers W and copper crystal clusters G form a long island pattern with undulations. In addition, it can be seen from FIG. 7 that the micro-roughened surface of the long island-like microstructured copper foil of Example 1 has the following structural characteristics: (1) At least ten first smooth surfaces with a length of 250 nm and a width of 250 nm Area 20a, the area of the first smooth area 20a is equivalent to 250 nm × 250 nm; (2) At least one second smooth area 20b with a length of 500 nm and a width of 500 nm, the area of the second smooth area 20b is equivalent to 500 nm × 500 nm; (3) at least one long island-like microstructure 20c with a length of 1,500 nm or more, and there are at least three copper crystals and/or copper whiskers in the long island-like microstructure 20c; and (4) at least Two linear copper-free areas 20d with a length of 1,000 nm or more. Structural features (1) and (2) help reduce the surface area of copper foil.

需要說明的是,上述結構特徵都是使用掃描式電子顯微鏡(SEM,型號:Hitachi S-3400N),並以傾斜角度35度與適當的放大倍率(若沒有特別註明倍率即指10,000倍)觀察銅箔的表面形貌後得到的結果,其中電子顯微鏡照電所對應的面積尺寸約為12.7 μm×9.46 μm,接近120 μm2 ;用語“第一平滑區域20a”及“第二平滑區域20b”是指在SEM的觀察下無銅結晶存在的區域;用語“長島狀微結構20c”是指一結構在SEM的觀察下具有接近島狀或半島狀的輪廓形狀,其四周存在許多平滑區;用語“線條狀無銅區域20d”是指一無銅結晶存在且寬度為長度的1/3以下的區域(可為直線狀或非直線狀),例如1/10、1/100或1/1000,其可為直線狀或非直線狀且可具有均一或非均一的寬度。It should be noted that the above structural features are used to observe the copper with a scanning electron microscope (SEM, model: Hitachi S-3400N), and an oblique angle of 35 degrees and an appropriate magnification (if the magnification is not specified, it means 10,000 times). The results obtained after the surface morphology of the foil, in which the area size corresponding to the electron microscope irradiation is about 12.7 μm×9.46 μm, which is close to 120 μm 2 ; the terms "first smooth region 20a" and "second smooth region 20b" are It refers to the area where no copper crystal exists under the observation of SEM; the term "long island-like microstructure 20c" refers to a structure with a contour shape close to an island or peninsula under SEM observation, and there are many smooth areas around it; the term " Line-shaped copper-free area 20d" refers to an area with no copper crystals and a width of less than 1/3 of the length (which can be linear or non-linear), such as 1/10, 1/100, or 1/1000, which It can be linear or non-linear and can have a uniform or non-uniform width.

使用實施例1的ULVLP銅箔與不同類型的預浸材製成銅箔基板,測試其插入損耗(insertion loss)值,結果如下表2所示。The ULVLP copper foil of Example 1 and different types of prepregs were used to make a copper foil substrate, and the insertion loss value was tested. The results are shown in Table 2 below.

表2 預浸材 測試方法 (INTEL) Delta-L PCIe-PCB材料和insertion loss目標 (參考Intel設定的目標) 類型 Df 電性項目 4 GHz的 插入損耗 (dB/in) 8 GHz的 插入損耗 (dB/in) 12.89 GHz的 插入損耗 (dB/in) 16 GHz的 插入損耗 (dB/in) 中損耗 0.015~0.010 Stripline -0.65 -1.16 -1.74 -2.30 低損耗 0.015~0.005 Stripline -0.50 -0.85 -1.25 -1.49 超低損耗 0.005~0.0005 Stripline -0.35 -0.58 -0.83 -0.96 Table 2 Prepreg Test method (INTEL) Delta-L PCIe-PCB material and insertion loss target (refer to the target set by Intel) Types of Df Electrical items Insertion loss at 4 GHz (dB/in) Insertion loss at 8 GHz (dB/in) Insertion loss at 12.89 GHz (dB/in) Insertion loss at 16 GHz (dB/in) Medium loss 0.015~0.010 Stripline -0.65 -1.16 -1.74 -2.30 Low loss 0.015~0.005 Stripline -0.50 -0.85 -1.25 -1.49 Ultra low loss 0.005~0.0005 Stripline -0.35 -0.58 -0.83 -0.96

[試驗例1][Test Example 1]

將實施例1及實施例2的ULVLP銅箔、根據台灣專利申請號第107133827號的反轉電解銅箔(型號:RG311,以下稱RG311銅箔)以及C公司所生產的反轉電解銅箔(型號:RTF-3,以下稱RTF-3銅箔),分別與I公司生產的中度損耗(Mid-loss)預浸材料(型號:IT170GRA1)貼合固化後,形成各自的單層銅箔基板。其中,RG311銅箔的表面粗糙度(Rz jis94)小於2.3微米。RTF-3銅箔的表面形貌如圖8所示,其是使用掃描式電子顯微鏡(型號:Hitachi S-3400N)以傾斜角度35度與放大倍率10000倍拍攝得到的,其中銅結晶很明顯是均勻地分佈於銅箔表面上。所有的單層銅箔基板的剝離強度皆滿足使用要求,並使用Intel公司提出的Delta L 的測試方法,在3 mils Core (1 oz)、10 mils PP及4.5 mils Trace Width對其進行訊號完整性測試,結果如下表3所示。The ULVLP copper foil of Example 1 and Example 2, the reverse electrolytic copper foil according to Taiwan Patent Application No. 107133827 (model: RG311, hereinafter referred to as RG311 copper foil) and the reverse electrolytic copper foil produced by C company ( Model: RTF-3, hereinafter referred to as RTF-3 copper foil), which are respectively bonded with the Mid-loss prepreg material (model: IT170GRA1) produced by I company and cured to form their own single-layer copper foil substrate . Among them, the surface roughness (Rz jis94) of RG311 copper foil is less than 2.3 microns. The surface morphology of the RTF-3 copper foil is shown in Figure 8. It was taken using a scanning electron microscope (model: Hitachi S-3400N) with an inclination angle of 35 degrees and a magnification of 10000 times. The copper crystals are obviously Evenly distributed on the surface of the copper foil. The peel strength of all single-layer copper foil substrates meets the requirements for use, and the Delta L test method proposed by Intel is used for signal integrity at 3 mils Core (1 oz), 10 mils PP and 4.5 mils Trace Width The test results are shown in Table 3 below.

表3 訊號完整性測試 材料 Df 等級 Dk@10 GHz RC 50% Df@10 GHz RC 50% 銅箔等級 Copper Model SL Loss (dB/in) 以比較1做基準 8 GHz 16 GHz 8 GHz 16 GHz IT-170GRA1 Mid Loss 3.90 0.0100 比較例1 RTF-3 -0.9395 -1.7694 0.00% 0.00% 比較例2 RG-311 -0.8321 -1.4986 11.43% 15.30% 實施例1 ULVLP -0.7839 -1.4022 16.56% 20.75% 實施例2 ULVLP -0.7418 -1.3380 21.04% 24.38% Table 3 Signal integrity test material Df grade Dk@10 GHz RC 50% Df@10 GHz RC 50% Copper foil grade Copper Model SL Loss (dB/in) Take comparison 1 as a benchmark 8 GHz 16 GHz 8 GHz 16 GHz IT-170GRA1 Mid Loss 3.90 0.0100 Comparative example 1 RTF-3 -0.9395 -1.7694 0.00% 0.00% Comparative example 2 RG-311 -0.8321 -1.4986 11.43% 15.30% Example 1 ULVLP -0.7839 -1.4022 16.56% 20.75% Example 2 ULVLP -0.7418 -1.3380 21.04% 24.38%

由表3的測試結果可知,在8 GHz的頻率下,ULVLP銅箔的插入損耗與RTF-3銅箔的插入損耗相比降低約16%~21%,且與RG311銅箔的插入損耗相比降低約5%~10%;在16 GHz的頻率下,ULVLP銅箔的插入損耗與RTF-3銅箔的插入損耗相比降低約20%~24%,與RG311銅箔的插入損耗相比降低約6%~10%。因此,ULVLP銅箔相較於RTF-3銅箔與RG311銅箔,具有較良好的訊號完整性。It can be seen from the test results in Table 3 that at a frequency of 8 GHz, the insertion loss of ULVLP copper foil is reduced by about 16%~21% compared with the insertion loss of RTF-3 copper foil, and compared with the insertion loss of RG311 copper foil Reduced by about 5%~10%; at the frequency of 16 GHz, the insertion loss of ULVLP copper foil is reduced by about 20%~24% compared with the insertion loss of RTF-3 copper foil, and the insertion loss of RG311 copper foil is reduced About 6%~10%. Therefore, ULVLP copper foil has better signal integrity than RTF-3 copper foil and RG311 copper foil.

[試驗例2][Test Example 2]

將實施例1及實施例2 的ULVLP銅箔、根據台灣專利申請號第107133827號的反轉電解銅箔(型號:RG311,以下稱RG311銅箔)以及C公司所生產的反轉電解銅箔(型號:RTF-3,以下稱RTF-3銅箔),分別與I公司生產的中度損耗(Low-loss)預浸材料(型號:IT958G)貼合固化後,形成各自的單層銅箔基板。其中,RG311銅箔的表面粗糙度(Rz jis94)小於2.3微米。RTF-3銅箔的表面形貌如圖8所示,其是使用掃描式電子顯微鏡(型號:Hitachi S-3400N)以傾斜角度35度與放大倍率10,000倍拍攝得到的,其中銅結晶很明顯是均勻地分佈於銅箔表面上。所有的單層銅箔基板的剝離強度皆滿足使用要求,並使用Intel公司提出的Delta L 的測試方法,在3 mils Core (1 oz)、10 mils PP及4.5 mils Trace Width對其進行訊號完整性測試,結果如下表4所示。The ULVLP copper foil of Example 1 and Example 2, the reverse electrolytic copper foil according to Taiwan Patent Application No. 107133827 (model: RG311, hereinafter referred to as RG311 copper foil) and the reverse electrolytic copper foil produced by C company ( Model: RTF-3, hereinafter referred to as RTF-3 copper foil), respectively and the low-loss prepreg material (model: IT958G) produced by I company after being bonded and solidified to form their respective single-layer copper foil substrates . Among them, the surface roughness (Rz jis94) of RG311 copper foil is less than 2.3 microns. The surface morphology of the RTF-3 copper foil is shown in Figure 8. It was taken using a scanning electron microscope (model: Hitachi S-3400N) with an inclination angle of 35 degrees and a magnification of 10,000 times. The copper crystals are obviously Evenly distributed on the surface of the copper foil. The peel strength of all single-layer copper foil substrates meets the requirements for use, and the Delta L test method proposed by Intel is used for signal integrity at 3 mils Core (1 oz), 10 mils PP and 4.5 mils Trace Width The test results are shown in Table 4 below.

表4 訊號完整性測試 材料 Df 等級 Dk@10 GHz RC 50% Df@10 GHz RC 50% 銅箔等級 Copper Model SL Loss (dB/in) 以比較1做基準 8 GHz 16 GHz 8 GHz 16 GHz IT-958G Low Loss 3.70 0.0070 比較例1 RTF-3 -0.7906 -1.4491 0.00% 0.00% 比較例2 RG-311 -0.6996 -1.2415 11.51% 14.33% 實施例1 ULVLP -0.6657 -1.1838 15.80% 18.31% 實施例2 ULVLP -0.6283 -1.1063 20.53% 23.66% Table 4 Signal integrity test material Df grade Dk@10 GHz RC 50% Df@10 GHz RC 50% Copper foil grade Copper Model SL Loss (dB/in) Take comparison 1 as a benchmark 8 GHz 16 GHz 8 GHz 16 GHz IT-958G Low Loss 3.70 0.0070 Comparative example 1 RTF-3 -0.7906 -1.4491 0.00% 0.00% Comparative example 2 RG-311 -0.6996 -1.2415 11.51% 14.33% Example 1 ULVLP -0.6657 -1.1838 15.80% 18.31% Example 2 ULVLP -0.6283 -1.1063 20.53% 23.66%

由表4的測試結果可知,From the test results in Table 4, it can be seen that

在8 GHz的頻率下,ULVLP銅箔的插入損耗與RTF-3銅箔的插入損耗相比降低約15.80%~20.53%,與RG311銅箔的插入損耗相比降低約3%~9%;在16 GHz的頻率下,ULVLP銅箔的插入損耗與RTF-3銅箔的插入損耗相比降低約18%~23%,與RG311銅箔的插入損耗相比降低約??。因此,ULVLP銅箔相較於RTF-3銅箔與RG311銅箔,具有較良好的訊號完整性。At the frequency of 8 GHz, the insertion loss of ULVLP copper foil is reduced by about 15.80%~20.53% compared with the insertion loss of RTF-3 copper foil, and by about 3%~9% compared with the insertion loss of RG311 copper foil; At a frequency of 16 GHz, the insertion loss of ULVLP copper foil is reduced by about 18% to 23% compared with the insertion loss of RTF-3 copper foil, and the insertion loss of RG311 copper foil is reduced by about ??. Therefore, ULVLP copper foil has better signal integrity than RTF-3 copper foil and RG311 copper foil.

[試驗例3][Test Example 3]

將實施例1及實施例2的ULVLP銅箔、根據台灣專利申請號第107133827號的反轉電解銅箔(型號:RG311,以下稱RG311)以及M公司所生產的電解銅箔(型號:HS1-M2-VSP,以下稱HS1-M2-VSP銅箔),分別使用I公司生產的中度損耗(Ultra Low-loss)預浸材料(型號:IT968)貼合固化後,形成各自的單層銅箔基板。其中,RG311的表面粗糙度(Rz jis94)小於2.3微米。所有的單層銅箔基板的剝離強度皆滿足使用要求,並使用Intel公司提出的Delta L 的測試方法,在3 mils Core (1 oz)、10 mils PP及4.5 mils Trace Width對其進行訊號完整性測試,結果如下表5所示。The ULVLP copper foil of Example 1 and Example 2, the reverse electrolytic copper foil (model: RG311, hereinafter referred to as RG311) according to Taiwan Patent Application No. 107133827 and the electrolytic copper foil produced by M company (model: HS1- M2-VSP, hereinafter referred to as HS1-M2-VSP copper foil), respectively use the ultra low-loss prepreg material (model: IT968) produced by I company to form a single-layer copper foil after being laminated and solidified Substrate. Among them, the surface roughness (Rz jis94) of RG311 is less than 2.3 microns. The peel strength of all single-layer copper foil substrates meets the requirements for use, and the Delta L test method proposed by Intel is used for signal integrity at 3 mils Core (1 oz), 10 mils PP and 4.5 mils Trace Width The test results are shown in Table 5 below.

表5 訊號完整性測試 材料 Df 等級 Dk@10 GHz RC 50% Df@10 GHz RC 50% 銅箔等級 Copper Model SL Loss (dB/in) 以比較1做基準 8 GHz 16 GHz 8 GHz 16 GHz IT-968 Ultra Low 3.66 0.0050 比較例1 HS1-M2-VSP -0.6013 -1.0403 0.00% 0.00% 比較例2 RG-311 -0.5489 -0.9208 8.71% 11.49% 實施例1 ULVLP -0.5209 -0.8667 13.37% 16.69% 實施例2 ULVLP -0.4927 -0.8202 18.06% 21.06% Table 5 Signal integrity test material Df grade Dk@10 GHz RC 50% Df@10 GHz RC 50% Copper foil grade Copper Model SL Loss (dB/in) Take comparison 1 as a benchmark 8 GHz 16 GHz 8 GHz 16 GHz IT-968 Ultra Low 3.66 0.0050 Comparative example 1 HS1-M2-VSP -0.6013 -1.0403 0.00% 0.00% Comparative example 2 RG-311 -0.5489 -0.9208 8.71% 11.49% Example 1 ULVLP -0.5209 -0.8667 13.37% 16.69% Example 2 ULVLP -0.4927 -0.8202 18.06% 21.06%

由表5的測試結果可知,在8 GHz的頻率下,ULVLP銅箔的插入損耗與HS1-M2-VSP銅箔的插入損耗相比降低約16.04%~19.73%,與RG311銅箔的插入損耗相比降低約5%~10%;在16 GHz的頻率下,ULVLP銅箔的插入損耗與HS1-M2-VSP銅箔的插入損耗相比降低約16%~21%,與RG311的插入損耗相比降低約5%~10%。因此,ULVLP銅箔相較於RG311銅箔與HS1-M2-VSP銅箔,具有較良好的訊號完整性。It can be seen from the test results in Table 5 that at a frequency of 8 GHz, the insertion loss of ULVLP copper foil is reduced by about 16.04%~19.73% compared with the insertion loss of HS1-M2-VSP copper foil, which is comparable to the insertion loss of RG311 copper foil. The ratio is reduced by about 5%~10%; at the frequency of 16 GHz, the insertion loss of ULVLP copper foil is reduced by about 16%~21% compared with the insertion loss of HS1-M2-VSP copper foil, which is compared with the insertion loss of RG311 Reduce by about 5%~10%. Therefore, ULVLP copper foil has better signal integrity than RG311 copper foil and HS1-M2-VSP copper foil.

[實施例的有益效果][Beneficial effects of the embodiment]

本發明的其中一有益效果在於,本發明的長島狀微結構的進階反轉銅箔,其能通過“微粗糙化處理面具有多個呈非均勻性分佈的銅結晶,而具有至少十個長為250 nm且寬為250 nm的第一平滑區域、至少一個長為500 nm且寬為500 nm的第二平滑區域以及至少一個長為1,500 nm以上的長島狀微結構,且長島狀微結構中有至少三個所述銅結晶及/或銅晶鬚”的技術手段,以在不損害剝離強度的前提下減少插入損耗(insertion loss),提高訊號完整性,以適應訊號傳輸的高頻、高速化,滿足5G應用的需求。One of the beneficial effects of the present invention is that the advanced inverted copper foil with a long island-like microstructure of the present invention can have at least ten copper crystals with a plurality of non-uniformly distributed copper crystals on the micro-roughened surface. A first smooth region with a length of 250 nm and a width of 250 nm, at least one second smooth region with a length of 500 nm and a width of 500 nm, and at least one long island-like microstructure with a length of 1,500 nm or more, and a long island-like microstructure There are at least three "copper crystals and/or copper whiskers" technical means to reduce insertion loss and improve signal integrity without compromising the peel strength, so as to adapt to the high frequency, High speed to meet the needs of 5G applications.

值得一提的是,本發明在某種程度上採用因「技術偏見」而被捨棄之技術手段,即使銅箔表面的具有一定的不平整度,且此技術手段直接產生了維持良好剝離強度並進一步優化電氣特性的有益技術效果。It is worth mentioning that the present invention adopts technical means that have been abandoned due to "technical bias" to some extent, even if the surface of the copper foil has a certain degree of unevenness, and this technical means directly produces good peel strength and maintains good peel strength. The beneficial technical effect of further optimizing the electrical characteristics.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。The content disclosed above is only the preferred and feasible embodiments of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

C:銅箔基板 1:基板 2:進階電解銅箔 20:微粗糙化處理面 20a:第一平滑區域 20b:第二平滑區域 20c:長島狀微結構 20d:線條狀無銅區域 21:銅結晶 211:頂部銅結晶 W:銅晶鬚 G:銅結晶團 22:凸峰 23:凹槽 3:連續式電解設備 31:送料輥 32:收料輥 33:電解槽 331:電極 34:電解輥組 35:輔助輥組C: Copper foil substrate 1: substrate 2: Advanced electrolytic copper foil 20: Micro-roughened surface 20a: The first smooth area 20b: Second smooth area 20c: Long island-like microstructure 20d: Line-shaped copper-free area 21: Copper Crystal 211: Top Copper Crystal W: Copper whisker G: Copper crystal group 22: convex peak 23: Groove 3: Continuous electrolysis equipment 31: Feeding roller 32: Receiving roller 33: Electrolyzer 331: Electrode 34: Electrolytic roller set 35: auxiliary roller group

圖1為本發明的銅箔基板的結構示意圖。Fig. 1 is a schematic diagram of the structure of the copper foil substrate of the present invention.

圖2為圖1的II部分的放大示意圖。Fig. 2 is an enlarged schematic diagram of part II of Fig. 1.

圖3為圖2的III部分的放大示意圖。Fig. 3 is an enlarged schematic diagram of part III of Fig. 2.

圖4為用於生產本發明的具有長島狀微結構的進階反轉電解銅箔的連續式電解設備的結構示意圖。Fig. 4 is a schematic structural diagram of a continuous electrolytic device for producing advanced reverse electrolytic copper foil with a long island-shaped microstructure of the present invention.

圖5為以放大倍率1000倍觀察得到的掃描式電子顯微鏡圖影像,其顯示本發明的具有長島狀微結構的進階反轉電解銅箔的表面形貌。Fig. 5 is a scanning electron microscope image obtained by observation at a magnification of 1000 times, which shows the surface morphology of the advanced inverted electrolytic copper foil with a long island-like microstructure of the present invention.

圖6為以放大倍率3000倍觀察得到的掃描式電子顯微鏡圖影像,其顯示本發明的具有長島狀微結構的進階反轉電解銅箔的表面形貌。6 is a scanning electron microscope image obtained by observation at a magnification of 3000 times, which shows the surface morphology of the advanced inverted electrolytic copper foil with a long island-like microstructure of the present invention.

圖7為以放大倍率10000倍觀察得到的掃描式電子顯微鏡圖影像,其顯示本發明的具有長島狀微結構的進階反轉電解銅箔的表面形貌。FIG. 7 is a scanning electron microscope image obtained by observation at a magnification of 10000 times, which shows the surface morphology of the advanced inverted electrolytic copper foil with a long island-like microstructure of the present invention.

圖8為掃描式電子顯微鏡圖影像,其顯示現有的RTF-3銅箔的表面形貌。Figure 8 is a scanning electron microscope image showing the surface morphology of the existing RTF-3 copper foil.

圖9為掃描式電子顯微鏡圖影像,其顯示現有的MLS-G銅箔的表面形貌。FIG. 9 is a scanning electron microscope image, which shows the surface morphology of the existing MLS-G copper foil.

21:銅結晶 21: Copper Crystal

211:頂部銅結晶 211: Top Copper Crystal

W:銅晶鬚 W: Copper whisker

G:銅結晶團 G: Copper crystal group

22:凸峰 22: convex peak

23:凹槽 23: Groove

Claims (18)

一種具有長島狀微結構的進階反轉電解銅箔,其特徵在於,所述進階反轉電解銅箔包括一微粗糙化處理面,其中所述微粗糙化處理面具有多個呈非均勻性分佈的銅結晶; 其中,不同數量的所述銅結晶堆疊在一起以形成各自的銅晶鬚,不同數量的所述銅晶鬚團聚在一起以形成各自的銅結晶團; 其中,在掃描式電子顯微鏡以35度傾斜角與10,000倍放大倍率的觀察下,所述微粗糙化處理面具有至少十個長為250 nm且寬為250 nm的第一平滑區域以及至少一個長為500 nm且寬為500 nm的第二平滑區域以及至少一個長為1,500 nm以上的長島狀微結構。An advanced inverted electrolytic copper foil with a long island-like microstructure is characterized in that the advanced inverted electrolytic copper foil includes a micro-roughened surface, wherein the micro-roughened surface has a plurality of non-uniform surfaces. Sexually distributed copper crystals; Wherein, different numbers of the copper crystals are stacked together to form respective copper whiskers, and different numbers of the copper whiskers are agglomerated together to form respective copper crystal clusters; Wherein, under the observation of a scanning electron microscope with an inclination angle of 35 degrees and a magnification of 10,000 times, the micro-roughened surface has at least ten first smooth regions with a length of 250 nm and a width of 250 nm and at least one long The second smooth region is 500 nm and the width is 500 nm, and at least one long island-like microstructure with a length of 1,500 nm or more. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,所述第一平滑區域與所述第二平滑區域內都不存在所述銅結晶。The advanced inverted electrolytic copper foil with a long island-shaped microstructure according to claim 1, wherein the copper crystals are not present in the first smooth area and the second smooth area. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,在掃描式電子顯微鏡以35度傾斜角與10,000倍放大倍率的觀察下,所述長島狀微結構中有至少三個所述銅結晶及/或所述銅晶鬚。The advanced inverted electrolytic copper foil having a long island-shaped microstructure according to claim 1, wherein, under observation of a scanning electron microscope at an inclination angle of 35 degrees and a magnification of 10,000 times, the long island-shaped microstructure has At least three of the copper crystals and/or the copper whiskers. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,每一個所述銅晶鬚具有一頂部銅結晶。The advanced reversed electrolytic copper foil with a long island-like microstructure according to claim 1, wherein each of the copper whiskers has a top copper crystal. 如請求項4所述的具有長島狀微結構的進階反轉電解銅箔,其中,多個所述頂部銅結晶呈錐狀、棒狀及/或球狀。The advanced inverted electrolytic copper foil with a long island-like microstructure according to claim 4, wherein a plurality of the top copper crystals are in a cone shape, a rod shape, and/or a spherical shape. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,所述微粗糙化處理面還具有至少兩個長為1,000 nm以上的線條狀無銅區域。The advanced reverse electrolytic copper foil with a long island-like microstructure according to claim 1, wherein the micro-roughened surface further has at least two linear copper-free areas with a length of 1,000 nm or more. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,所述微粗糙化處理面的表面粗糙度(Rz jis94)小於2.1微米。The advanced reverse electrolytic copper foil with a long island-like microstructure according to claim 1, wherein the surface roughness (Rz jis94) of the micro-roughened surface is less than 2.1 micrometers. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,所述微粗糙化處理面還包括多個凸峰以及位於多個所述凸峰之間的多個凹槽,且多個所述銅結晶、多個所述銅晶鬚與多個所述銅結晶團對應形成於多個所述凸峰上。The advanced inverted electrolytic copper foil with a long island-shaped microstructure according to claim 1, wherein the micro-roughened surface further includes a plurality of convex peaks and a plurality of grooves located between the plurality of convex peaks , And a plurality of the copper crystals, a plurality of the copper whiskers, and a plurality of the copper crystal clusters are correspondingly formed on the plurality of convex peaks. 如請求項1所述的具有長島狀微結構的進階反轉電解銅箔,其中,每一個所述凹槽具有一U形或V形的剖面形貌。The advanced reversed electrolytic copper foil with a long island-like microstructure according to claim 1, wherein each of the grooves has a U-shaped or V-shaped cross-sectional topography. 一種銅箔基板,其包括: 一基板;以及 一進階反轉電解銅箔,其設置於所述基板上,且具有一微粗糙化處理面接合於所述基板的一表面,其中所述微粗糙化處理面具有多個呈非均勻性分佈的銅結晶; 其中,不同數量的所述銅結晶堆疊在一起以形成各自的銅晶鬚,不同數量的所述銅晶鬚團聚在一起以形成各自的銅結晶團; 其中,在掃描式電子顯微鏡以35度傾斜角與10,000倍放大倍率的觀察下,所述微粗糙化處理面具有至少十個長為250 nm且寬為250 nm的第一平滑區域以及至少一個長為500 nm且寬為500 nm的第二平滑區域以及至少一個長為1,500 nm以上的長島狀微結構。A copper foil substrate, which includes: A substrate; and An advanced reverse electrolytic copper foil, which is disposed on the substrate and has a micro-roughened surface bonded to a surface of the substrate, wherein the micro-roughened surface has a plurality of non-uniform distributions的铜晶; Wherein, different numbers of the copper crystals are stacked together to form respective copper whiskers, and different numbers of the copper whiskers are agglomerated together to form respective copper crystal clusters; Wherein, under the observation of a scanning electron microscope with an inclination angle of 35 degrees and a magnification of 10,000 times, the micro-roughened surface has at least ten first smooth regions with a length of 250 nm and a width of 250 nm and at least one long The second smooth region is 500 nm and the width is 500 nm, and at least one long island-like microstructure with a length of 1,500 nm or more. 如請求項10所述的銅箔基板,其中,所述第一平滑區域與所述第二平滑區域內都不存在所述銅結晶。The copper foil substrate according to claim 10, wherein the copper crystal does not exist in the first smooth area and the second smooth area. 如請求項10所述的銅箔基板,其中,在掃描式電子顯微鏡以35度傾斜角與1,000倍放大倍率的觀察下,所述長島狀微結構中有至少三個所述銅結晶及/或所述銅晶鬚。The copper foil substrate according to claim 10, wherein, under observation with a scanning electron microscope at an inclination angle of 35 degrees and a magnification of 1,000 times, there are at least three copper crystals and/or copper crystals in the long island-shaped microstructure The copper whiskers. 如請求項10所述的銅箔基板,其中,每一個所述銅晶鬚具有一頂部銅結晶。The copper foil substrate according to claim 10, wherein each of the copper whiskers has a top copper crystal. 如請求項13所述的銅箔基板,其中,多個所述頂部銅結晶呈錐狀、棒狀及/或球狀。The copper foil substrate according to claim 13, wherein a plurality of the top copper crystals have a cone shape, a rod shape, and/or a spherical shape. 如請求項10所述的銅箔基板,其中,所述微粗糙化處理面還具有至少兩個長為1,000 nm以上的線條狀無銅區域。The copper foil substrate according to claim 10, wherein the micro-roughened surface further has at least two linear copper-free areas with a length of 1,000 nm or more. 如請求項10所述的銅箔基板,其中,所述微粗糙化處理面的表面粗糙度(Rz jis94)小於2.1微米。The copper foil substrate according to claim 10, wherein the surface roughness (Rz jis94) of the micro-roughened surface is less than 2.1 micrometers. 如請求項10所述的銅箔基板,其中,所述微粗糙化處理面還包括多個凸峰以及位於多個所述凸峰之間的多個凹槽,且多個所述銅結晶、多個所述銅晶鬚與多個所述銅結晶團對應形成於多個所述凸峰上。The copper foil substrate according to claim 10, wherein the micro-roughened surface further includes a plurality of convex peaks and a plurality of grooves located between the plurality of convex peaks, and a plurality of the copper crystals, One of the copper whiskers and a plurality of the copper crystal clusters are formed on the plurality of convex peaks correspondingly. 如請求項17所述的銅箔基板,其中,每一個所述凹槽具有一U形或V形的剖面形貌。The copper foil substrate according to claim 17, wherein each of the grooves has a U-shaped or V-shaped cross-sectional profile.
TW109120638A 2019-06-19 2020-06-18 Advanced reverse-treated electrodeposited copper foil having long and island-shaped structures and copper clad laminate using the same TWI736325B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020106379A JP2021021137A (en) 2019-06-19 2020-06-19 Advanced treated electrodeposited copper foil having long and island-shaped structures and copper clad laminate using the same
US16/905,934 US11408087B2 (en) 2019-06-19 2020-06-19 Advanced electrodeposited copper foil having island-shaped microstructures and copper clad laminate using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962863827P 2019-06-19 2019-06-19
US62/863,827 2019-06-19

Publications (2)

Publication Number Publication Date
TW202102722A true TW202102722A (en) 2021-01-16
TWI736325B TWI736325B (en) 2021-08-11

Family

ID=73798850

Family Applications (3)

Application Number Title Priority Date Filing Date
TW109207516U TWM608774U (en) 2019-06-19 2020-06-15 Advanced reverse-treated electrodeposited copper foil and copper clad laminate using the same
TW109120074A TWI776168B (en) 2019-06-19 2020-06-15 Advanced reverse-treated electrodeposited copper foil and copper clad laminate using the same
TW109120638A TWI736325B (en) 2019-06-19 2020-06-18 Advanced reverse-treated electrodeposited copper foil having long and island-shaped structures and copper clad laminate using the same

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW109207516U TWM608774U (en) 2019-06-19 2020-06-15 Advanced reverse-treated electrodeposited copper foil and copper clad laminate using the same
TW109120074A TWI776168B (en) 2019-06-19 2020-06-15 Advanced reverse-treated electrodeposited copper foil and copper clad laminate using the same

Country Status (2)

Country Link
CN (2) CN112118669B (en)
TW (3) TWM608774U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817166B (en) * 2021-07-23 2023-10-01 先豐通訊股份有限公司 Circuit board and method for manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11332839B2 (en) 2019-06-19 2022-05-17 Co-Tech Development Corp. Advanced electrodeposited copper foil and copper clad laminate using the same

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3222002B2 (en) * 1993-12-27 2001-10-22 株式会社日鉱マテリアルズ Copper foil for printed circuit and manufacturing method thereof
JP3262929B2 (en) * 1993-12-28 2002-03-04 セイコーインスツルメンツ株式会社 Gold alloy plating solution
JP3291486B2 (en) * 1999-09-06 2002-06-10 三井金属鉱業株式会社 Surface-regulated electrolytic copper foil, its production method and its use
JP4230855B2 (en) * 2003-08-26 2009-02-25 日鉱金属株式会社 Copper foil continuous surface treatment equipment
US20050067378A1 (en) * 2003-09-30 2005-03-31 Harry Fuerhaupter Method for micro-roughening treatment of copper and mixed-metal circuitry
KR100941219B1 (en) * 2005-03-31 2010-02-10 미쓰이 긴조꾸 고교 가부시키가이샤 Electrolytic copper foil, surface treated electrolytic copper foil using said electrolytic copper foil, and copper-clad laminate plate and printed wiring board using said surface treated electrolytic copper foil
TW200718347A (en) * 2005-07-14 2007-05-01 Mitsui Mining & Smelting Co Blackening surface treated copper foil and electromagnetic wave shielding conductive mesh for front panel of plasma display using the blackening surface treated copper foil
EP2351876A1 (en) * 2008-11-25 2011-08-03 JX Nippon Mining & Metals Corporation Copper foil for printed circuit
JP5400447B2 (en) * 2009-03-31 2014-01-29 三井金属鉱業株式会社 Roughened copper foil, method for producing roughened copper foil, and copper-clad laminate
JP5448616B2 (en) * 2009-07-14 2014-03-19 古河電気工業株式会社 Copper foil with resistance layer, method for producing the copper foil, and laminated substrate
EP2457725B1 (en) * 2009-07-24 2018-11-28 Mitsubishi Gas Chemical Company, Inc. Resin composite electrolytic copper foil, copper-clad laminate, and printed wiring board
JP5368928B2 (en) * 2009-09-29 2013-12-18 株式会社Shカッパープロダクツ Copper foil continuous electrolytic plating equipment
JP4948656B2 (en) * 2010-03-17 2012-06-06 古河電気工業株式会社 Perforated roughening copper foil for secondary battery current collector, method for producing the same, and negative electrode for lithium ion secondary battery
JP5019654B2 (en) * 2010-03-31 2012-09-05 古河電気工業株式会社 Copper (alloy) foil for negative electrode current collector of lithium ion secondary battery, manufacturing method thereof, negative electrode of lithium ion secondary battery, manufacturing method thereof
JP5654416B2 (en) * 2011-06-07 2015-01-14 Jx日鉱日石金属株式会社 Liquid crystal polymer copper clad laminate and copper foil used for the laminate
CN103649377B (en) * 2011-06-28 2016-05-11 古河电气工业株式会社 Electrolytic copper foil, the wiring board that uses this electrolytic copper foil and pliability wiring board
CN103857833B (en) * 2011-09-30 2018-09-07 Jx日矿日石金属株式会社 Excellent copper foil, its manufacturing method and printed wiring board or negative electrode battery material using the electrolytic copper foil with resin adhesiveness
CN104812945B (en) * 2012-11-26 2018-08-28 Jx日矿日石金属株式会社 Surface-treated electro-deposited copper foil, laminated plates, printing distributing board and e-machine
KR101695236B1 (en) * 2013-12-30 2017-01-11 일진머티리얼즈 주식회사 Copper foil, electric component and battery comprising the foil
WO2015111756A1 (en) * 2014-01-27 2015-07-30 三井金属鉱業株式会社 Roughened copper foil, copper-clad laminate, and printed wiring board
JP6149016B2 (en) * 2014-05-09 2017-06-14 Jx金属株式会社 Copper foil with carrier, method for producing copper-clad laminate, method for producing electronic device, method for producing copper foil with carrier, and method for producing printed wiring board
JP2016003378A (en) * 2014-06-18 2016-01-12 株式会社Shカッパープロダクツ Surface-treated copper foil, production method thereof and laminate
CN106687623B (en) * 2014-09-02 2019-07-16 三井金属矿业株式会社 Melanism surface treatment copper foil and copper foil with carrier foils
CN104372384B (en) * 2014-11-18 2016-08-17 安徽铜冠铜箔有限公司 A kind of manufacture method of super thick electronics Copper Foil
KR101852671B1 (en) * 2015-01-21 2018-06-04 제이엑스금속주식회사 Copper foil with carrier, laminate, printed circuit board and method of manufacturing printed circuit board
WO2016174998A1 (en) * 2015-04-28 2016-11-03 三井金属鉱業株式会社 Roughened copper foil and printed wiring board
CN107614760B (en) * 2015-07-03 2018-07-13 三井金属矿业株式会社 Roughening treatment copper foil, copper-clad laminated board and printed circuit board
WO2017138338A1 (en) * 2016-02-10 2017-08-17 古河電気工業株式会社 Surface-treated copper foil and copper-clad laminate produced using same
TWI619852B (en) * 2017-02-24 2018-04-01 南亞塑膠工業股份有限公司 Manufacturing methods of electrolytic copper foil having football-shaped copper particles and circuit board assembly
TWI619851B (en) * 2017-02-24 2018-04-01 南亞塑膠工業股份有限公司 Manufacturing methods of electrolytic copper foil having needle-shaped copper particles and circuit board assembly
JP2018145519A (en) * 2017-03-03 2018-09-20 Jx金属株式会社 Surface-treated copper foil, copper foil with carrier, laminate, method of producing printed wiring board and method of producing electronic apparatus
JP7055049B2 (en) * 2017-03-31 2022-04-15 Jx金属株式会社 Surface-treated copper foil and laminated boards using it, copper foil with carriers, printed wiring boards, electronic devices, and methods for manufacturing printed wiring boards.
JP7356209B2 (en) * 2017-03-31 2023-10-04 Jx金属株式会社 Surface-treated copper foil, surface-treated copper foil with resin layer, copper foil with carrier, laminate, method for manufacturing printed wiring boards, and method for manufacturing electronic devices
JP2020508231A (en) * 2017-07-31 2020-03-19 サーキット フォイル ルクセンブルグ エス.エイ.アール.エル.Circuit Foil Luxembourg S.A.R.L. Copper-clad laminate and printed circuit board including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI817166B (en) * 2021-07-23 2023-10-01 先豐通訊股份有限公司 Circuit board and method for manufacturing the same

Also Published As

Publication number Publication date
TW202100813A (en) 2021-01-01
CN112118669A (en) 2020-12-22
CN112118669B (en) 2022-08-26
CN112118672A (en) 2020-12-22
CN112118672B (en) 2022-04-29
TWM608774U (en) 2021-03-11
TWI736325B (en) 2021-08-11
TWI776168B (en) 2022-09-01

Similar Documents

Publication Publication Date Title
JP7270579B2 (en) Micro-roughened electrodeposited copper foil and copper-clad laminate
TWI736325B (en) Advanced reverse-treated electrodeposited copper foil having long and island-shaped structures and copper clad laminate using the same
JP7228904B2 (en) Back-treated electrolytic copper foil and copper foil substrate using the same
JP7146274B2 (en) Micro-roughened electrolytic copper foil and copper foil substrate
JP7392996B2 (en) Advanced electrolytic copper foil and copper-clad laminates using it
JP7142925B2 (en) Micro rough electrolytic copper foil and copper foil substrate
CN111031663B (en) Copper foil substrate
TWI695898B (en) Micro-roughened electrolytic copper foil and copper clad laminate using the same
CN110952117B (en) Micro-rough electrolytic copper foil and copper foil substrate
CN111194134B (en) Electrolytic copper foil subjected to fine roughening treatment and copper-clad substrate using same
US11408087B2 (en) Advanced electrodeposited copper foil having island-shaped microstructures and copper clad laminate using the same
TWM543249U (en) Electrolysis copper foil with surface layer containing fur-shape structure and circuit board component