TW202042296A - Substrate processing apparatus and substrate processing method - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 179
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 92
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000007788 liquid Substances 0.000 claims abstract description 72
- 239000012530 fluid Substances 0.000 claims abstract description 40
- 230000007246 mechanism Effects 0.000 claims description 33
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 42
- 239000012071 phase Substances 0.000 description 32
- 229910052736 halogen Inorganic materials 0.000 description 24
- 150000002367 halogens Chemical class 0.000 description 23
- 239000000126 substance Substances 0.000 description 23
- 238000011068 loading method Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000005514 two-phase flow Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000006864 oxidative decomposition reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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Abstract
Description
本發明係關於一種半導體晶圓等之基板處理裝置及基板處理方法。The present invention relates to a substrate processing apparatus and substrate processing method for semiconductor wafers and the like.
通常,於半導體之晶圓製程中,作為用以形成器件構造之蝕刻或離子布植等之遮罩,廣泛使用作為感光性樹脂之抗蝕膜。即,以形成於基板之處理面之抗蝕膜為遮罩進行蝕刻或離子布植等後,自基板之處理面去除抗蝕膜。Generally, in the semiconductor wafer manufacturing process, as a mask for etching or ion implantation for forming device structures, it is widely used as a resist film for photosensitive resin. That is, after etching or ion implantation is performed using the resist film formed on the processing surface of the substrate as a mask, the resist film is removed from the processing surface of the substrate.
作為去除抗蝕膜之方法,廣泛使用硫酸與過氧化氫之混合液(硫酸過氧化氫混合物)。又,提出使用對環境影響較小之臭氧(O3 )水之方法(參照專利文獻1)。 [先前技術文獻] [專利文獻]As a method of removing the resist film, a mixed solution of sulfuric acid and hydrogen peroxide (sulfuric acid hydrogen peroxide mixture) is widely used. In addition, a method of using ozone (O 3 ) water, which has a small impact on the environment, is proposed (refer to Patent Document 1). [Prior Art Document] [Patent Document]
[專利文獻1]國際公開第2010/140581號 [專利文獻2]日本專利特開2009-218548號公報[Patent Document 1] International Publication No. 2010/140581 [Patent Document 2] Japanese Patent Laid-Open No. 2009-218548
[發明所欲解決之問題][The problem to be solved by the invention]
使用臭氧(O3 )水去除抗蝕膜之方法雖然對環境之影響較小,但存在抗蝕膜之去除速率較低,對1片基板進行處理之時間較長之問題。Although the method of using ozone (O 3 ) water to remove the resist film has little impact on the environment, it has the problem that the removal rate of the resist film is low and the processing time for one substrate is longer.
本發明係鑒於上述情況完成者,其目的在於提供一種可獲得較高之抗蝕膜之去除速率之基板處理裝置及基板處理方法。 [解決問題之技術手段]The present invention was completed in view of the above circumstances, and its object is to provide a substrate processing apparatus and a substrate processing method that can obtain a higher removal rate of the resist film. [Technical means to solve the problem]
本發明之基板處理裝置具備:旋轉機構部,其水平保持基板,使所保持之上述基板繞鉛直軸旋轉;固定板,其固定於一個面與由上述旋轉機構部保持之上述基板之處理面隔開間隔地相對之位置,於與上述處理面之間形成流路;及噴出部,其設置於與上述基板之中央部對向之位置,於藉由上述旋轉機構部使上述基板旋轉期間,對上述流路供給臭氧氣體及臭氧水,使混合臭氧氣體與臭氧水而成之氣液兩相流體流動。The substrate processing apparatus of the present invention includes a rotating mechanism section that horizontally holds a substrate and rotates the held substrate around a vertical axis; and a fixing plate that is fixed to a surface separated from the processing surface of the substrate held by the rotating mechanism section Positions opposed to each other at intervals, forming a flow path between the processing surface; and an ejection portion, which is provided at a position opposite to the center portion of the substrate, and is opposed during the rotation of the substrate by the rotation mechanism portion The above-mentioned flow path supplies ozone gas and ozone water, and flows a gas-liquid two-phase fluid formed by mixing ozone gas and ozone water.
本發明之基板處理方法具有:旋轉步驟,其係於使水平保持之基板之處理面與固定之固定板之一個面隔開間隔相對,於上述處理面與上述一個面之間形成有流路的狀態下,使上述基板繞鉛直軸旋轉;及氣液兩相流體供給步驟,其係於上述旋轉步驟中,自與上述基板之中央部對向之位置對上述流路供給臭氧氣體及臭氧水,使混合臭氧氣體與臭氧水而成之氣液兩相流體流動。 [發明之效果]The substrate processing method of the present invention has: a rotating step in which the processing surface of the horizontally held substrate is opposed to one surface of the fixed fixing plate at an interval, and a flow path is formed between the processing surface and the one surface In the state, the substrate is rotated around a vertical axis; and the gas-liquid two-phase fluid supply step is performed in the rotation step, in which ozone gas and ozone water are supplied to the flow path from a position opposite to the center of the substrate, The gas-liquid two-phase fluid formed by mixing ozone gas and ozone water flows. [Effects of Invention]
根據本發明,使基板之處理面與固定板之一個面隔開間隔地相對,於處理面與固定板之一個面之間形成流路,於基板之旋轉中使混合臭氧氣體與臭氧水而成之氣液兩相流體於流路中流動,因此可獲得較高之去除速率。According to the present invention, the processing surface of the substrate and one surface of the fixed plate are opposed to each other at a distance, a flow path is formed between the processing surface and one surface of the fixed plate, and ozone gas and ozone water are mixed during the rotation of the substrate. The gas-liquid two-phase fluid flows in the flow path, so a higher removal rate can be obtained.
圖1中,基板處理裝置10使用臭氧氣體與臭氧水之氣液兩相流去除形成於基板11之抗蝕膜(省略圖示)。基板11例如為矽晶圓等半導體基板。該例中,形成各種半導體元件、電路之基板11之一個面為成為處理對象之處理面S1,基板處理裝置10去除形成於該處理面S1之抗蝕膜。該例之基板處理裝置10以使處理面S1向下之狀態進行去除抗蝕膜之處理,但亦可以使處理面S1向上之狀態進行去除抗蝕膜之處理。In FIG. 1, the
基板處理裝置10具備殼體12、旋轉機構部14、裝載機構15、噴出部16、固定板17、供給部18、鹵素燈加熱器19、排出部20等。該基板處理裝置10之各部藉由控制部(省略圖示)總括地控制。The
殼體12為有底之圓筒狀,於上部設置有開口為圓形狀之上部開口12a。於殼體12內,收容有固定板17及後述旋轉台21等,並且收容基板11。上部開口12a以大於基板11之直徑形成,通過該上部開口12a對殼體12進行基板11之取出置入。又,該例中,如下所述,上部開口12a成為對殼體12內擷取外部氣體之擷取口。The
旋轉機構部14使水平保持之基板11繞鉛直軸旋轉,該例中,包含旋轉台21、驅動軸22、電動馬達23、基板保持部24等。旋轉台21為圓盤狀,收容於殼體12內。旋轉台21固定於驅動軸22之上端部,繞鉛直之旋轉軸Z旋動自如,以使其上表面水平之狀態旋動。旋轉台21與驅動軸22同軸。驅動軸22於厚度方向(上下方向)貫通殼體12之底面12b,藉由設置於底面12b之開口部之軸承25而旋動自如地被支持。於驅動軸22之下部固定有皮帶輪26。該皮帶輪26與安裝於電動馬達23之旋轉軸之皮帶輪23a之間掛設有皮帶27。藉此,當電動馬達23驅動時,驅動軸22與旋轉台21一體旋轉。藉由使電動馬達23之速度增減,調節旋轉台21之旋轉速度。The
於旋轉台21設置有保持基板11之基板保持部24。基板保持部24包含沿周向以特定間隔排列於旋轉台21之周緣部之複數個保持具24a。各保持具24a與旋轉台21一體旋轉。再者,圖1中,僅描繪有2根保持具24a,實際上例如設置有6根保持具24a。The
保持具24a例如於其前端形成有階差部,於各保持具24a之階差部之各者載置基板11之周緣部。藉此,藉由基板保持部24於特定高度水平支持基板11。藉由基板保持部24支持之基板11與旋轉台21之上表面隔開被支持於上方。又,各保持具24a分別於基板11之徑向移動,藉此利用各保持具24a夾持基板11。如此,基板11由基板保持部24保持,與旋轉台21同軸地固定,與旋轉台21一體地旋轉。上述基板保持部24之構成為一例,並不限定於此。例如,亦可藉由抵接於基板11之處理面S1側之周緣部而對基板11與旋轉台21規定間隔之複數個銷、及於徑向夾持固定基板11之複數個銷構成基板保持部24。The
於驅動軸22,於其內部形成有上下方向貫通之貫通孔22a。又,於旋轉台21之中央部,形成有與貫通孔22a連接之貫通孔21a。筒狀之固定軸28貫穿於貫通孔21a及貫通孔22a。該固定軸28與殼體12等共同固定於外部之框架等。因此,旋轉台21及驅動軸22繞固定軸28旋轉。The
於固定軸28之上端,固定有用以供給氣液兩相流之流體(以下稱氣液兩相流體)之混合器29,於該混合器29固定有固定板17。於混合器29之上表面形成有成為噴出部16之複數個噴出孔30(參照圖2)。又,於混合器29,經由供給管部31連接有供給部18,該供給管部31包含穿過固定軸28之中空部28a之供給管31a~31d(參照圖2)。再者,亦可將固定板17直接固定於固定軸28。At the upper end of the
包含噴出部16之混合器29及固定板17配置於由基板保持部24保持之基板11與旋轉台21之間。如下所述,固定板17固定於其上表面與由基板保持部24保持之基板11之處理面S1隔開間隔地相對之位置。The
基板11之取出置入係藉由裝載機構15如上所述般通過上部開口12a進行。裝載機構15自收納盒(省略圖示)取出作為處理對象之基板11,將基板11移動至由基板保持部24支持之位置。收納盒中,以處理面S1向上之姿勢收納基板11。因此,裝載機構15自收納盒取出基板11後,將基板11上下翻轉使處理面S1向下。又,裝載機構15自殼體12內取出處理後之基板11後,將基板11上下翻轉使處理面S1向上後,將基板11返回至收納盒。The removal and placement of the
於殼體12之上方配置有鹵素燈加熱器19。鹵素燈加熱器19以向下放射紅外線之姿勢設置。如圖1所示,該鹵素燈加熱器19藉由移動機構32在配置於上部開口12a之上方而加熱基板11的加熱位置與為了自上部開口12a進行基板11之取出置入而自上部開口12a之上方退避的退避位置之間於水平方向上移動。加熱位置之鹵素燈加熱器19配置於與上部開口12a之周緣之間形成較小之間隙之高度。再者,圖1中,為方便圖示,誇張描繪加熱位置處之鹵素燈加熱器19與上部開口12a之周緣之間之間隙。又,該例中,使鹵素燈加熱器19於水平方向移動而位於加熱位置與退避位置,亦可以使其自上部開口12a朝上方離開從而不妨礙基板11之取出置入的位置作為退避位置,藉由移動機構32使鹵素燈加熱器19於上下方向移動。A
於藉由基板處理裝置10對基板11進行處理時,鹵素燈加熱器19藉由移動機構32位於加熱位置。加熱位置之鹵素燈加熱器19通過上部開口12a對位於其正下方之基板11之背面S2(與處理面S1為相反側之面)照射紅外線加熱基板11。鹵素燈加熱器19於以氣液兩相流體對基板11進行處理時點亮,照射紅外線。因鹵素燈加熱器19與背面S2之間不存在障礙物,因此可有效率地加熱基板11。藉由加熱基板11,促進藉由氣液兩相流體使抗蝕膜氧化分解。When the
再者,該例中,使用鹵素燈加熱器19作為加熱器,亦可使用其他各種加熱器。又,於可自上部開口12a向上方充分遠離地配置鹵素燈加熱器19之情形時,亦可省略移動機構32,使鹵素燈加熱器19之位置固定。In addition, in this example, the
於殼體12內設置有導引筒34。該例中之導引筒34係其上部隨著朝向上方直徑漸窄之錐形狀的筒狀。導引筒34例如固定於殼體12,其軸心經調整與旋轉台21之旋轉中心一致。又,導引筒34之下端到達殼體12之底面12b。於導引筒34之上部之開口34a內配置有旋轉台21。開口34a之內徑為略大於旋轉台21之外徑之程度,使旋轉台21與導引筒34之間之間隙較小。該導引筒34於與殼體12之間形成排出之通路。又,藉由設置該導引筒34,防止因旋轉台21之旋轉捲起微粒,抑制微粒附著於基板11,又,防止處理液或其氣化物流向驅動軸22及軸承25等機構部。A
排出部20包含上述作為擷取口之上部開口12a、形成於殼體12之底面12b之排出口37、抽吸機38等。作為抽吸機38,例如使用泵,經由配管39連接於排出口37。排出部20藉由抽吸機38之驅動產生壓力差,使排出口37之壓力較基板11與固定板17之間及上部開口12a小。藉此,將自基板11與固定板17之間流出之各種氣體、處理液或其飛沫、進而因處理產生之微粒等異物有效率地導向排出口37,並排出至殼體12之外部。於抽吸機38設置有分離機構,將自排出口37抽吸之氣體與液體分離排出。The
又,藉由利用上述壓力差自上部開口12a向殼體12內擷取外部氣體,形成自上部開口12a通過殼體12與導引筒34之間朝向排出口37之氣流(圖1之箭頭F)。藉此,防止臭氧氣體、處理液及處理液之氣化物、微粒等異物經由上部開口12a漏出至殼體12之外部,並且將自基板11與固定板17之間流出之各種氣體、處理液、微粒等異物有效率地導向排出口37,並排出至殼體12之外部。In addition, by using the above-mentioned pressure difference to extract external air from the
就利用自上向下流動之氣流將自基板11與固定板17之間流出之氣體、液體、微粒等導向排出口37之觀點而言,構成排出部20之擷取口設置於較由基板保持部24保持之基板11之處理面S1高之位置即可。又,就將自基板11與固定板17之間流出之氣體、液體、微粒等導向排出口37之觀點而言,排出口37設置於較固定板17之上表面低之位置即可。再者,考慮到自旋轉台21上流下之臭氧水,亦較佳為於較旋轉台之上表面低之位置設置排出口37。From the viewpoint of the gas, liquid, particles, etc. flowing out between the
因此,例如於設為處理中將上部開口12a氣密地封閉之構成之情形時,於較由殼體12之側面之基板保持部24所保持之基板11之處理面S1高的位置,設置作為擷取口之1個或複數個開口。又,亦可設為自貫通殼體12之管道之一端之開口向殼體12內導入外部氣體之構成,於該情形時,將管道之一端之開口設置於較由基板保持部24所保持之基板11之處理面S1高之位置即可。又,將自基板11與固定板17之間流出之氣體、液體、微粒等導向排出口37之觀點而言,例如亦可於較殼體12之側面之固定板17(或旋轉台21)之上表面低之位置設置排出口37。Therefore, for example, when the
於將基板11之處理面S1保持為向上之姿勢進行處理之情形時,固定板17配置於基板11之處理面S1之上方。於該情形時,構成排出部20之擷取口設置於較固定板17之下表面高之位置,排出口37設置於較所保持之基板11之處理面S1低之位置即可。When the processing surface S1 of the
再者,於設為將上部開口12a氣密地封閉之構成之情形時,藉由將上部開口12a以紅外線之透過率較高之例如石英玻璃封閉,便可使用鹵素燈加熱器19等自殼體12之外側加熱基板11。Furthermore, when the
圖2中,混合器29形成為於內部形成有中空部29a之例如圓柱形狀。如上所述,該混合器29於上表面形成有構成噴出部16之複數個噴出孔30。各噴出孔30形成為於厚度方向貫通混合器29之上表面之孔。於圖3中表示一例,混合器29之上表面之各噴出孔30係以使氣液兩相流體於基板11之處理面S1上均勻流動之方式配置。In FIG. 2, the
固定板17為直徑略小於基板11之圓盤狀,配置於保持具24a之內周側。該固定板17之直徑可根據保持基板11之基板保持部24之構成等適當變更,較佳為與基板11相同程度或其以上。固定板17於其中央部形成有貫通孔17a。藉由於該貫通孔17a嵌合固定混合器29,固定板17與旋轉台21同軸地固定於固定軸28。又,藉由以此種方式將固定板17與混合器29固定,於與基板11之中央部對向之固定板17之中央部配置噴出部16。又,該例中,以混合器29之上表面成為與固定板17之上表面S3相同高度之方式固定混合器29與固定板17。固定板17之上表面S3平坦。The fixing
鉛直方向上,固定板17之上表面S3與由各保持具24a保持之基板11之處理面S1之間隔開間隔D相對。藉此,於上表面S3與處理面S1之間形成供臭氧氣體與臭氧水之氣液兩相流體流動之流路41。作為流路41之高度之間隔D例如可藉由增減由各保持具24a支持之基板11之處理面S1之位置、即保持具24a之階差之高度調整。間隔D例如設定為1 mm左右。該間隔D較佳為0.5 mm~3 mm之範圍內,更佳為1 mm~2 mm之範圍內。若間隔D為0.5 mm以上,則可容易地回避基板11與固定板17之接觸進行處理,若為3 mm以下,則可於流路41內容易地獲得氣液兩相流之如下所述之期望之流動樣式。又,若為1 mm以上,則可顯著降低基板11與固定板17之接觸之危險性,若為2 mm以下,則可藉由較少之臭氧水容易地形成所期望之流動樣式之高速流動。In the vertical direction, the upper surface S3 of the fixing
混合器29於其中空部29a之下部分別連接有供給管31a~31d之一端。供給管31a~31d之另一端連接於供給部18。供給部18包含臭氧氣體供給部18a、臭氧水供給部18b、純水供給部18c、藥液供給部18d。臭氧氣體供給部18a經由供給管31a對混合器29供給臭氧氣體,臭氧水供給部18b經由供給管31b對混合器29供給使臭氧溶解於純水而成之臭氧水。該等臭氧氣體與臭氧水之供給同時進行。又,純水供給部18c經由供給管31c對混合器29供給純水,藥液供給部18d經由供給管31d對混合器29供給藥液。作為藥液,使用用以去除處理面S1之微粒等異物者,例如作為過氧化氫與氨之混合水溶液之SC1(Standard Clean 1,標準清潔液1)。In the
亦可設置對來自臭氧水供給部18b之臭氧水添加添加劑之添加部。作為對臭氧水添加之添加劑,例如可列舉有助於增加羥基(OH)自由基從而提高抗蝕膜之去除速率之氨(NH4
OH)、過氧化氫(H2
O2
)及異丙醇(IPA)及該等之組合。An addition part for adding additives to ozone water from the ozone
混合器29使被供給之臭氧氣體與臭氧水於中空部29a內混合,產生氣液兩相流體。以混合器29產生之氣液兩相流體自各噴出孔30噴出至流路41內。又,各噴出孔30藉由混合器29被供給純水,將純水噴出至流路41內,藉由混合器29被供給藥液,將藥液噴出至流路41內。自噴出部16供給之氣液兩相流體、純水、藥液一面沿基板11之周向擴散一面向外周流動。The
基板處理裝置10中,如上所述,於流路41中使氣液兩相流體流動,使基板11之處理面S1之各部交替地暴露於臭氧氣體與臭氧水,藉此與僅使用臭氧水之情形時相比,獲得較高之抗蝕膜之去除速率。因此,流路41中之氣液兩相流體於基板11之處理面S1上作為臭氧氣體(氣相)與臭氧水(液相)交替流動之間歇流之形式流動。如圖4所示,以基板11之處理面S1與固定板17之上表面S3形成之流路41中之氣液兩相流體之流動至少為臭氧氣體之大氣泡46與臭氧水之液體部47於流路41之上部交替流動。作為此種氣液兩相流之流動樣式,例如可列舉汽包流。又,如圖5所示,氣液兩相流體之流動亦可為擴散充滿流路41之高度之大氣泡48與液體部49交替流動之間歇流。為了設為如上所述之氣液兩相流,根據流路41之高度(間隔D)調整臭氧氣體流量與臭氧水流量之比率及總流量。In the
其次,對上述構成之作用進行說明。再者,以下說明之順序為一例,並不限定處理順序。設為抽吸機38始終驅動,對殼體12內進行抽吸之狀態。設為鹵素燈加熱器19藉由移動機構32移動至退避位置之狀態。此後,如圖6所示,藉由裝載機構15自盒中取出作為處理對象之基板11(步驟ST1)。基板11係以處理面S1向上之方式收納於盒中,因此裝載機構15使取出之基板11翻轉180°,使處理面S1向下(步驟ST2)。Next, the function of the above configuration will be explained. In addition, the order described below is an example, and the processing order is not limited. It is assumed that the
藉由裝載機構15,將翻轉之基板11通過上部開口12a移動至殼體12內之旋轉台21上,將該基板11之周緣載置於各保持具24a之階差。解除裝載機構15對基板11之保持後,使各保持具24a進行作動,成為藉由各保持具24a保持基板11之狀態(步驟ST3)。藉此,基板11以處理面S1向下且與固定板17之上表面S3隔開間隔之方式固定於旋轉台21。With the
基板11固定後,鹵素燈加熱器19藉由移動機構32移動至加熱位置。其後,驅動電動馬達23,旋轉台21開始與基板11一體旋轉(步驟ST4)。After the
旋轉台21之旋轉開始後,臭氧氣體供給部18a開始供給臭氧氣體,與此同時地,臭氧水供給部18b開始供給臭氧水(步驟ST5)。此時,臭氧水例如藉由臭氧水供給部18b預先加熱至70℃左右後供給。臭氧水中之臭氧之濃度例如為100 ppm以上500 ppm以下之範圍內,供給量例如為2 L(升)/分鐘以上20 L/分鐘以下之範圍內,臭氧氣體之流量例如調整為20 L/分鐘以下。再者,上述臭氧水中之臭氧濃度、臭氧水及臭氧氣體之供給量之範圍為一例,並不限定於該等範圍。After the rotation of the
進而,點亮鹵素燈加熱器19(步驟ST6)。藉由點亮該鹵素燈加熱器19,自背面S2側將基板11加熱至特定溫度。此時之基板11之溫度例如為30℃~100℃之範圍內。Furthermore, the
來自臭氧氣體供給部18a之臭氧氣體與來自臭氧水供給部18b之臭氧水經由供給管31a、31b供給至混合器29。藉此,所供給之臭氧氣體與臭氧水於混合器29之中空部29a混合,自各噴出孔30作為氣液兩相流體供給至由基板11之處理面S1與固定板17之上表面S3形成之流路41。氣液兩相流體於流路41中流動,藉由基板11之旋轉一面沿周向擴散,一面向基板11之外周流動。The ozone gas from the ozone
藉由以此種方式使氣液兩相流體於流路41中流動,對處理面S1之整個面供給氣液兩相流體,處理面S1之各部交替暴露於臭氧氣體與臭氧水。藉此,將抗蝕膜氧化分解,逐漸去除。推測係由於基板11之表面附近產生亂流,故而邊界層變薄,臭氧到達基板11之量增加,因此去除速率變高。又,藉由鹵素燈加熱器19加熱基板11,因此促進利用臭氧使抗蝕膜氧化分解。By flowing the gas-liquid two-phase fluid in the
當氣液兩相流體到達基板11之外周時,藉由壓力差被導向排出口37排出。因此,氣液兩相流體之臭氧氣體及臭氧水不會自上部開口12a漏出至殼體12之外側。又,離開處理面S1之微粒等與上述氣液兩相流體共同被搬送至基板11之外側,藉由來自上部開口12a之氣流自排出口37排出。When the gas-liquid two-phase fluid reaches the outer periphery of the
當距開始供給氣液兩相流體經過特定處理時間時(步驟ST7中為「是(YES)」),熄滅鹵素燈加熱器19(步驟ST8),並且停止供給臭氧氣體及臭氧水(步驟ST9)。特定處理時間預先設定為可完全去除抗蝕膜之時間。When the specific processing time has elapsed since the start of supply of the gas-liquid two-phase fluid ("YES" in step ST7), the
繼而,進行第1次純水沖洗處理(步驟ST10)。自純水供給部18c經由供給管31c對混合器29供給純水,該純水自各噴出孔30供給至流路41。純水藉由基板11之旋轉於處理面S1上一面沿周向擴散,一面向基板11之外周流動。如此,對處理面S1之整個面供給純水將其洗淨。經過特定時間後,停止純水之供給。再者,亦可省略該第1次純水沖洗處理。Then, the first pure water rinsing process is performed (step ST10). The pure water is supplied to the
其次,為了去除微粒,進行藥液處理(步驟ST11)。藥液處理中,來自藥液供給部18d之藥液經由供給管31d、混合器29、噴出孔30供給至流路41。藉此,對處理面S1供給藥液,該藥液藉由基板11之旋轉,於處理面S1上一面沿周向擴散,一面向基板11之外周流動。如此,對處理面S1之整個面供給藥液,去除處理面S1上之微粒。藥液視其種類加溫。例如,於藥液為SC1之情形時,將SC1加溫至40℃~80℃供給,於30秒~60秒之處理時間後停止供給藥液。Next, in order to remove particles, a chemical liquid treatment is performed (step ST11). In the chemical liquid treatment, the chemical liquid from the chemical
藥液處理後,進行第2次純水沖洗處理(步驟ST12)。與第1次純水沖洗處理同樣地,對流路41供給純水,從而對處理面S1之整個面供給純水將其洗淨。經過特定時間後停止供給純水。After the chemical solution treatment, the second pure water rinsing treatment is performed (step ST12). As in the first pure water rinsing treatment, pure water is supplied to the
純水沖洗處理後,增大旋轉台21之旋轉速度、即基板11之旋轉速度,進行基板11之旋轉乾燥(步驟ST13)。藉此,藉由離心力甩出附著於基板11之兩面之純水,使基板11乾燥。After the pure water rinse treatment, the rotation speed of the
再者,藥液處理、純水沖洗處理、及旋轉乾燥中,自基板11及旋轉台21流出之藥液及純水、進而附著於殼體12之內壁而流下之藥液及純水被抽吸至排出口37排出。又,即便產生藥液及純水之微小飛沫,該飛沫亦藉由來自上部開口12a之氣流被導向排出口37。因此,藥液及純水之飛沫不會自上部開口12a漏出。Furthermore, in the chemical treatment, pure water rinsing treatment, and spin drying, the chemical and pure water flowing from the
旋轉乾燥結束時,停止電動馬達23,從而停止旋轉台21及基板11之旋轉(步驟ST14)。解除保持具24a對基板11之保持後(步驟ST15),藉由裝載機構15通過上部開口12a取出基板(步驟ST16)。裝載機構15將基板11翻轉使處理面S1向上(步驟ST17),將基板11收納至盒中(步驟ST18)。When the spin drying is completed, the
如上,對1片基板11之處理結束,此後以同樣之順序對新基板11進行處理。如上所述,使用氣液兩相流體去除抗蝕膜,其去除速率較高,因此於短時間內對1片基板11進行處理。As above, the processing of one
將測定藉由如上構成之基板處理裝置10去除抗蝕膜時抗蝕膜之去除速度所得的結果(符號G1)表示於圖7中。又,圖7中,一併表示測定使用臭氧水時抗蝕膜之去除速度之結果(符號G2)。再者,以臭氧水去除抗蝕膜時之基板處理裝置之構成與基板處理裝置10相同,代替氣液兩相流體,僅使臭氧水於流路41中流動。根據其結果可知,藉由使用氣液兩相流體去除抗蝕膜,獲得較高之去除速率。The result (symbol G1) obtained by measuring the removal rate of the resist film when the resist film is removed by the
上文中,使用內部中空之混合器混合臭氧氣體與臭氧水,但混合器之構成並不限定於此。例如,圖8所示之混合器51於其中空部51a設置有將經由供給管31a、31b供給之臭氧氣體與臭氧水混合攪拌之元件52、53,作為靜態混合器發揮功能。又,亦可自固定板之中央部直接對流路供給臭氧氣體與臭氧水,於流路內混合臭氧氣體與臭氧水。In the above, a hollow mixer is used to mix ozone gas and ozone water, but the configuration of the mixer is not limited to this. For example, the
上述例中,於殼體內設置有1個導引筒,亦可設為如下構成:使各軸心與旋轉台之旋轉中心一致地設置上部開口之高度不同之複數個導引筒,並且使旋轉台以可於形成於各導引筒之上部之各開口內旋轉之方式升降。根據該構成,於最外側之導引筒與殼體之間、及導引筒與導引筒之間形成氣流之複數條路徑。藉此,藉由根據要供給之氣體或處理液之種類,改變旋轉台之高度進行處理,可改變使自旋轉台與基板之間流出之氣體或處理液流動的路徑,將其等分別排出至殼體外。再者,關於此種構成,記載於日本專利特開2012-209559號公報、日本專利特開2007-180268號公報。In the above example, one guide tube is installed in the housing, but it can also be configured as follows: a plurality of guide tubes with different heights of the upper opening are arranged so that each axis is consistent with the rotation center of the rotating table, and the rotation The platform can be raised and lowered in a manner that can rotate in each opening formed on the upper part of each guide cylinder. According to this structure, a plurality of paths of air flow are formed between the outermost guide tube and the housing, and between the guide tube and the guide tube. In this way, by changing the height of the rotating table according to the type of gas or processing liquid to be supplied for processing, it is possible to change the flow path of the gas or processing liquid flowing out between the rotating table and the substrate, and to discharge them respectively to Outside the shell. In addition, this structure is described in Japanese Patent Laid-Open No. 2012-209559 and Japanese Patent Laid-Open No. 2007-180268.
10:基板處理裝置
11:基板
12:殼體
12a:上部開口
12b:底面
14:旋轉機構部
15:裝載機構
16:噴出部
17:固定板
18:供給部
18a:臭氧氣體供給部
18b:臭氧水供給部
18c:純水供給部
18d:藥液供給部
19:鹵素燈加熱器
20:排出部
21:旋轉台
21a:貫通孔
22:驅動軸
22a:貫通孔
23:電動馬達
23a:皮帶輪
24:基板保持部
24a:保持具
25:軸承
26:皮帶輪
27:皮帶
28:固定軸
28a:中空部
29:混合器
29a:中空部
30:噴出孔
31:供給管部
31a:供給管
31b:供給管
31c:供給管
31d:供給管
32:移動機構
34:導引筒
34a:開口
37:排出口
38:抽吸機
39:配管
41:流路
46:大氣泡
47:液體部
48:大氣泡
49:液體部
51:混合器
51a:中空部
52:元件
53:元件
S1:處理面
S2:背面
S3:上表面
Z:旋轉軸10: Substrate processing equipment
11: substrate
12:
圖1係表示基板處理裝置之構成之剖視圖。 圖2係表示混合器及噴出部之構成之剖視圖。 圖3係表示噴出孔之排列之一例之說明圖。 圖4係表示流路內之氣液兩相流體之說明圖。 圖5係表示流路內之氣液兩相流體之另一例之說明圖。 圖6係表示去除抗蝕膜之順序之流程圖。 圖7係表示使用氣液兩相流體去除抗蝕膜之速度與使用臭氧水去除抗蝕膜之速度之圖表。 圖8係表示以靜態混合器作為混合器之例之剖視圖。Fig. 1 is a cross-sectional view showing the structure of a substrate processing apparatus. Fig. 2 is a cross-sectional view showing the structure of the mixer and the ejection section. Fig. 3 is an explanatory diagram showing an example of the arrangement of ejection holes. Fig. 4 is an explanatory diagram showing the gas-liquid two-phase fluid in the flow path. Fig. 5 is an explanatory diagram showing another example of the gas-liquid two-phase fluid in the flow path. Fig. 6 is a flowchart showing the procedure for removing the resist film. FIG. 7 is a graph showing the speed of removing the resist film using a gas-liquid two-phase fluid and the speed of removing the resist film using ozone water. Fig. 8 is a cross-sectional view showing an example in which a static mixer is used as a mixer.
10:基板處理裝置 10: Substrate processing equipment
11:基板 11: substrate
12:殼體 12: Shell
12a:上部開口 12a: Upper opening
12b:底面 12b: bottom surface
14:旋轉機構部 14: Rotating Mechanism Department
15:裝載機構 15: Loading mechanism
16:噴出部 16: spouting part
17:固定板 17: fixed plate
18:供給部 18: Supply Department
19:鹵素燈加熱器 19: Halogen heater
20:排出部 20: Discharge part
21:旋轉台 21: Rotating table
21a:貫通孔 21a: Through hole
22:驅動軸 22: drive shaft
22a:貫通孔 22a: Through hole
23:電動馬達 23: electric motor
23a:皮帶輪 23a: Pulley
24:基板保持部 24: Board holding part
24a:保持具 24a: retainer
25:軸承 25: Bearing
26:皮帶輪 26: Pulley
27:皮帶 27: Belt
28:固定軸 28: fixed shaft
28a:中空部 28a: hollow part
29:混合器 29: mixer
31:供給管部 31: Supply pipe department
32:移動機構 32: mobile mechanism
34:導引筒 34: guide tube
34a:開口 34a: opening
37:排出口 37: Outlet
38:抽吸機 38: suction machine
39:配管 39: Piping
S1:處理面 S1: Processing surface
S2:背面 S2: Back
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