JP2023152532A - Wafer processing device - Google Patents

Abstract

To provide a wafer processing device which suppresses contact of steam generated between a process liquid holding section and a wafer during processing of the wafer with a surface of a wafer newly carried into a processing chamber.SOLUTION: A wafer processing device 1 comprises: a holding section 20 which holds a wafer W; a rotor 10 which rotates the wafer W held by the hold section 20; a supply mechanism 41 which supplies process liquid onto a surface of the wafer W held by the holding section 20 and supplies rinse liquid to the process liquid supplied onto the surface of the wafer W; a heating section 44 which heats the process liquid supplied onto the surface of the wafer W held by the holding section 20; a cup section 30 which encloses the wafer W held by the holding section 20, receives and discharges the process liquid dispersed from the wafer W and exhausts a down flow inside of a processing chamber; and a removal section 50 which removes steam M generated between a process liquid holding section 42 and the wafer W from the heated process liquid and the rinse liquid supplied to the heated process liquid.SELECTED DRAWING: Figure 1

Description

The present invention relates to a substrate processing apparatus.

Substrate processing equipment is known that removes resist formed on the surface of a substrate such as a semiconductor wafer using a processing liquid with strong oxidizing power such as SPM (a mixture of sulfuric acid and hydrogen peroxide). There is. Such a substrate processing apparatus includes a processing liquid holding section provided opposite to the surface of the substrate. The processing liquid holding section holds the processing liquid supplied from the supply mechanism. The processing liquid holding section is provided with a heater that heats the processing liquid. Thereby, the substrate processing apparatus supplies a high temperature processing liquid to the substrate and peels off the resist formed on the surface of the substrate.

The processing liquid holding section heats the processing liquid and maintains the processing liquid at a high temperature not only before the processing liquid is supplied to the substrate but also after the processing liquid is supplied to the substrate. Therefore, as shown in Patent Document 1, the processing liquid holding section has a larger diameter than the substrate and is provided so as to cover the entire surface of the substrate.

International Publication No. 2011/090141

In a substrate processing step, a room temperature rinsing liquid is supplied to the high temperature processing liquid supplied to the substrate in order to wash away the processing liquid from the substrate. At this time, due to the temperature difference between the processing liquid and the rinsing liquid, the rinsing liquid is rapidly heated and boils, generating a large amount of steam over the entire surface of the substrate. Note that this steam is mostly steam from the rinsing liquid that cools down after being vaporized, but it also includes steam from the processing liquid. When the processing liquid is supplied to the substrate, it becomes a liquid film that covers the substrate, and the vapor generated from this liquid film cools and becomes steam. In the processing chamber where the substrate processing equipment is located, a downflow is usually generated from the FFU (fan filter unit) installed on the ceiling of the processing chamber, so this steam is flowed downward into the processing chamber. , and is exhausted to the outside by a cup part provided so as to surround the substrate.

However, as mentioned above, if a processing liquid holding part with a larger diameter than the substrate is provided to cover the substrate, the downflow will be blocked and steam will fill and stagnate between the processing liquid holding part and the substrate. I end up. Since such steam is not flowed downward into the processing chamber due to the downflow, there is a possibility that the steam will not be exhausted to the outside by the cup portion. If a new substrate (an unprocessed substrate) is brought in in this condition, the steam that has accumulated on this substrate will come into contact with it, and the components of the processing liquid contained in the steam will adhere to the surface of the substrate as particles. There is. Even if a substrate is processed using a processing liquid with particles attached, the particles may not be completely removed, which may lead to poor quality of the substrate.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus that prevents steam generated between a processing liquid holding part and a substrate during substrate processing from coming into contact with the surface of a substrate newly carried into a processing chamber. shall be.

The substrate processing apparatus of the present invention includes a holding part that holds a substrate carried into a processing chamber, a rotating body that rotates the substrate held by the holding part, and a rotating body that rotates the substrate held by the holding part. a supply mechanism that supplies a processing liquid and supplies a rinsing liquid to the processing liquid that has been supplied to the surface of the substrate; and a supply mechanism that is provided opposite to the surface of the substrate held by the holding section, and a processing liquid holding portion having a large diameter, and the processing liquid holding portion is arranged between a processing position close to a liquid film of the processing liquid formed on the surface of the substrate and a retracted position spaced apart from the surface of the substrate. a lifting mechanism for raising and lowering the substrate; a heating unit for heating a processing liquid supplied to the surface of the substrate held by the holding unit; and a heating unit provided to surround the substrate held by the holding unit; a cup part that receives and drains the processing liquid scattered from the processing chamber and exhausts the downflow inside the processing chamber; The method further includes a removing section that removes steam generated between the processing liquid holding section and the substrate.

The substrate processing apparatus of the present invention can suppress steam generated between the processing liquid holding section and the substrate during processing of the substrate from coming into contact with the surface of the substrate newly carried into the processing chamber.

FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is a plan view showing the operation of the holding section of the substrate processing apparatus of FIG. 1; FIG. 3 is a diagram comparing the degree of contamination of substrates according to the prior art and the embodiment. It is a figure which shows the structure of the removal part of a modification. It is a figure which shows the structure of the removal part of another modification. It is a figure which shows the structure of the removal part of another modification. It is a figure which shows the structure of the removal part of another modification.

[composition]
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention (hereinafter also referred to as the present embodiment) will be described below with reference to the drawings. The substrate processing apparatus 1 is an apparatus that processes the substrate W by supplying a processing liquid to the surface of the substrate W while holding and rotating the substrate W. The substrate W to be processed is, for example, a circular silicon semiconductor wafer. As shown in FIG. 1, the substrate processing apparatus 1 includes a rotating body 10, a holding section 20, a cup section 30, a supply section 40, a removal section 50, and a detection section 60. Further, a control device 70 that controls each part of the substrate processing apparatus 1 is connected to the substrate processing apparatus 1 . In the following description, the direction that resists gravity is assumed to be upward, and the direction that follows gravity is assumed to be downward, but the installation direction of the substrate processing apparatus 1 is not limited.

The substrate processing apparatus 1 is arranged, for example, in a processing chamber. A filter F such as a ULPA filter is provided on the ceiling of the processing chamber. Inside the processing chamber, an air supply port (not shown) provided through the filter F causes a downflow from above to below. The downflow is exhausted to the outside from an exhaust port V opened at the bottom of the cup portion 30, which will be described later, through an exhaust pipe P communicating with the exhaust port V. Specifically, the exhaust pipe P is connected to exhaust equipment of a factory where the substrate processing apparatus 1 is installed. Thereby, the downflow is exhausted to the outside through the exhaust pipe P.

The rotating body 10 is rotatably provided around a rotation axis A by a rotation mechanism 13 having a motor 12 on a fixed base 11 fixed to an installation surface (not shown) or a frame installed on the installation surface. . The rotating body 10 has a cylindrical shape with one end closed by a table 10a. The table 10a is a circular surface having a larger diameter than the substrate W, and faces the substrate W held by the holding section 20 with a gap therebetween.

The holding unit 20 is a member that holds the substrate W in parallel with the table 10a with a space therebetween, and is provided on the rotating body 10. That is, the holding part 20 is provided rotatably by the rotating body 10. Six holding parts 20 are provided at equal intervals along the periphery of the table 10a. Each holding part 20 has a rotating member 21, a holding member 22, and a drive mechanism 23.

As shown in FIG. 2, the rotating members 21 are six cylindrical members arranged at equal intervals along the periphery of the substrate W. The rotating member 21 is provided so as to be rotatable about an axis parallel to the rotation axis A of the rotating body 10. The top surface of the rotating member 21 is exposed from the table 10a.

The holding member 22 is provided at a position eccentric from the center of rotation of the top surface of each rotating member 21 so as to protrude upward. Six holding members 22 are provided, the same number as the rotating members 21. The holding member 22 has an inclined surface 22a and a chuck pin 22b. The sloped surface 22a is a surface that slopes upward from the center side of the rotating body 10 toward the outer peripheral edge, and comes into contact with the edge of the substrate W as the rotation member 21 rotates. The chuck pin 22b is a cylindrical projection provided at the top of the holding member 22 and at the upper end of the inclined surface 22a. The side surface of the chuck pin 22b has a constriction into which the edge of the substrate W fits.

As the rotating member 21 rotates, the holding member 22 moves between a holding position where it holds the substrate W by contacting the edge of the substrate W (see FIG. 2A) and a holding position where it holds the substrate W by coming into contact with the edge of the substrate W, and a holding position where it holds the substrate W by moving away from the edge of the substrate W. It moves between the open position where W is opened (see FIG. 2(B)). In this embodiment, the six chuck pins 22b finally come into contact with the edge of the substrate W, thereby gripping the substrate W.

The drive mechanism 23 rotates the rotating member 21 to move the holding member 22 between the holding position and the open position. The drive mechanism 23 has a drive shaft 231, a small gear 232, and a large gear 233. The drive shaft 231 is a cylindrical member provided on the opposite side of the top surface of the rotating member 21 and coaxially with the axis of rotation of the rotating member 21 .

The small gear 232 is a sector gear provided at the end of the drive shaft 231 on the opposite side to the rotating member 21. The large gear 233 corresponds to the small gear 232 and is a gear in which gear grooves are intermittently formed. The large gear 233 is rotatably provided coaxially with the rotating body 10 by the rotation mechanism 13 that rotates the rotating body 10 . The large gear 233 has six protrusions formed at predetermined intervals in the circumferential direction at intervals corresponding to those of the small gear 232, and a gear groove that meshes with the small gear 232 is formed on the outer peripheral surface of the tip of each protrusion. ing.

The large gear 233 is biased in the rotational direction (counterclockwise) indicated by an arrow α in FIG. 2(A) by a biasing member such as a spring (not shown). As a result, the small gear 232 is biased in the clockwise direction indicated by the arrow β1, so the rotating member 21 is linked to the rotation of the small gear 232, and the chuck pin 22b moves toward the center of the rotating body 10. , is maintained in a holding position in contact with the substrate W. Note that during substrate processing, the rotating member 21, drive shaft 231, chuck pin 22b, small gear 232, and large gear 233 rotate together with the rotating body 10 while maintaining this holding position.

Further, the rotation of the large gear 233 is prevented by a stopper mechanism (not shown). When the rotating body 10 is rotated in the direction of the arrow γ as shown in FIG. 2(B) with the rotation of the large gear 233 being blocked, the small gear 233 meshing with the large gear 233 whose rotation is blocked rotates in the counterclockwise direction shown by arrow β2. As a result, the rotating member 21 rotates, and the chuck pins 22b move in a direction away from the edge of the substrate W and come to the open position.

The cup part 30 is a cylindrical member that receives the processing liquid scattered from the rotating substrate W, and is provided so as to surround the rotating body 10 and the holding part 20. That is, the cup part 30 is provided so as to surround the substrate W held by the holding part 20. The upper part of the cup part 30 is open so that the substrate W held by the holding part 20 is exposed. Moreover, the upper part of the cup part 30 is inclined inward in the radial direction. The cup portion 30 is provided with a lifting mechanism (not shown), and is provided so as to be able to rise, for example, to receive the processing liquid, and to be able to fall so as not to interfere with loading and unloading the substrate W. The processing liquid received in the cup part 30 flows along the inside of the cup part 30 and is drained from a pipe (not shown) provided at the bottom of the cup part 30. Further, the above-mentioned exhaust port V is provided at the bottom of the cup portion 30, and the downflow generated inside the processing chamber is exhausted. In this way, the cup section 30 receives and drains the processing liquid scattered from the substrate W, and exhausts the downflow inside the processing chamber.

The supply unit 40 is a member that supplies a processing liquid to the surface of the substrate W, that is, the surface of the substrate W held by the holding unit 20 on the opposite side from the table 10a, and is provided above the rotating body 10 and the holding unit 20. It is being The supply section 40 includes a supply mechanism 41 , a processing liquid holding section 42 , a lifting mechanism 43 , and a heating section 44 .

The supply mechanism 41 is a mechanism that supplies a plurality of types of processing liquids or rinsing liquids. The supply mechanism 41 of this embodiment supplies carbonated water, pure water ( _H2O ), sulfuric acid, and hydrogen peroxide, for example. In addition, the supply mechanism 41 simultaneously supplies sulfuric acid and hydrogen peroxide, thereby supplying SPM, which is a mixture of both, as a treatment liquid. Hereinafter, SPM will be particularly referred to as a treatment liquid, and particularly hydrogen peroxide water will be referred to as a rinsing liquid. The supply mechanism 41 includes a processing liquid tank 41a, a passage pipe 41b, a processing liquid supply pipe 41c, a flow rate adjustment valve 41d, and a flow meter 41e.

The processing liquid tank 41a is a container that stores each processing liquid. In each processing liquid tank 41a, a communication pipe 41b is connected in parallel to a processing liquid supply pipe 41c. The processing liquid supply pipe 41c has its distal end facing the substrate W held by the holding section 20. Thereby, the processing liquid stored in each processing liquid tank 41a is supplied to the surface of the substrate W via the communication pipe 41b and the processing liquid supply pipe 41c. Each communication pipe 41b is provided with a flow rate adjustment valve 41d that adjusts the flow rate of the processing liquid, and a flow meter 41e that measures the flow rate of the processing liquid.

The processing liquid holding section 42 has a circular shape with a larger diameter than the substrate W, and has a tray shape by forming a wall rising on the side opposite to the rotating body 10 at the peripheral edge. The outer bottom surface of the processing liquid holding section 42 faces the substrate W. A distal end of a processing liquid supply pipe 41c is inserted into the processing liquid holding section 42, a discharge port 42a exposed to the substrate W side, and a distal end of a delivery pipe 51 of a removing section 50, which will be described later, are inserted into the processing liquid holding section 42, and the distal end of the processing liquid supply pipe 41c is inserted into the processing liquid holding section 42, and the discharging port 42a exposed to the substrate W side is inserted. An exposed discharge port 42b is formed. The discharge port 42 a is provided at a position eccentric from the central axis of the processing liquid holding section 42 . This position is a position where the processing liquid can be supplied to the center of the surface of the substrate W.

The elevating mechanism 43 is a mechanism that moves the processing liquid holding section 42 in a direction toward and away from the substrate W. As the elevating mechanism 43, various mechanisms that move the processing liquid holding part 42 in a direction parallel to the rotation axis A of the rotating body 10, such as a cylinder or a ball screw mechanism, can be used. The elevating mechanism 43 moves the processing liquid holding section 42 up and down between the processing position and the retracted position. The processing position is a position where the surface of the processing liquid holding section 42 on the side facing the substrate W is close to the liquid film of the processing liquid formed on the surface of the substrate W. The retreat position is a position where the surface of the processing liquid holding section 42 facing the substrate W is spaced apart from the surface of the substrate W so that the substrate W can be carried into and out of the substrate processing apparatus 1. .

The heating unit 44 has a heater 441 provided on the surface of the processing liquid holding unit 42 opposite to the surface facing the substrate W, and uses the heater 441 to transfer the processing liquid supplied from the supply mechanism 41 to the surface of the substrate W. , for example, at 180°C to 200°C. As a result, vapor is generated from the liquid film of the processing liquid formed on the surface of the substrate W, and this vapor is cooled to generate steam between the processing liquid holding 42 and the substrate W. The heater 441 has a circular sheet shape. The heater 441 is formed with a through hole 441a through which a processing liquid supply pipe 41c is inserted, and a through hole 441b through which a distal end of a removal section 50 (described later) is inserted.

Note that when the supply mechanism 41 supplies a rinsing liquid at room temperature, for example 25° C., to the processing liquid heated on the surface of the substrate W by the heater 441, the rinsing liquid is rapidly heated and boils, causing evaporation. However, as the evaporated rinsing liquid cools further, a large amount of steam is generated between the processing liquid holding section 42 of the supply section 40 and the substrate W from the entire surface of the substrate W. In the following description, this steam and the steam generated from the liquid film of the above-mentioned processing liquid are collectively referred to as steam M. The steam M fills the space between the processing liquid holding section 42 and the substrate W and stays there.

The removing section 50 is a member that removes steam M remaining between the processing liquid holding section 42 and the substrate W. The removal section 50 has a passage pipe 51 and a gas supply mechanism 52. One end of the delivery tube 51 is inserted through the processing liquid holding section 42 and the heating section 44 and is provided so as to be exposed on the substrate W side. That is, the opening 51a of the delivery tube 51 is provided on the substrate W side of the processing liquid holding section 42. The other end of the communication pipe 51 is connected to a gas supply mechanism 52. The gas supply mechanism 52 sends out a gas G such as N ₂ or air to the delivery pipe 51, and supplies the gas G from the opening 51a. Thereby, the removing section 50 supplies the gas G to the steam M from the opening 51a, and expels the steam M from between the processing liquid holding section 42 and the substrate W.

The detection unit 60 is, for example, a sensor such as a photoelectric sensor, and detects steam M. Note that the photoelectric sensor of this embodiment will be described as a reflective type in which a light projecting section and a light receiving section are integrated. The detection unit 60 is provided on the side of the holding unit 20 so as to direct its optical axis toward the space between the processing liquid holding unit 42 and the substrate W, and at a position that does not interfere with the vertical movement of the cup unit 30. The detection unit 60 irradiates light such as infrared light toward the space between the processing liquid holding unit 42 and the substrate W, and detects steam M of the processing liquid. The detection unit 60 transmits the fact that steam M has been detected to a control device 70, which will be described later.

Note that the position where the detection section 60 is provided is not limited to the side of the holding section 20. For example, it may be provided on the wall surface of the processing chamber, or may be provided on the inclined upper part of the cup portion 30. Alternatively, it may be provided on a swing arm (not shown). In this case, the detection section 60 is movably provided between the cup section 30 and the processing liquid holding section 42 by means of a swing arm.

Furthermore, the detection unit 60 detects not only the steam M generated between the processing liquid holding unit 42 and the substrate W, but also the steam M leaking from between the processing liquid holding unit 42 and the substrate W, for example. It may be provided so as to irradiate infrared rays toward the inside of the cup portion 30. The detection unit 60 is not limited to this, and the installation position may be any position as long as it can detect the steam M leaking from between the processing liquid holding unit 42 and the substrate W.

The control device 70 is connected to the substrate processing apparatus 1 and includes a processor that executes programs, a memory that stores various information such as programs and operating conditions, and a drive that drives each element in order to realize the functions of the substrate processing apparatus 1. Has a circuit. That is, the control device 70 controls the rotating body 10, the holding section 20, the supplying section 40, the removing section 50, the detecting section 60, and the like. The control device 70 also includes an input device for inputting information and a display device for displaying information.

[Effect]
Next, substrate processing by the substrate processing apparatus 1 will be explained. The substrate W mounted on the robot hand of the transfer robot is carried between the processing liquid holding section 42 and the rotating body 10, and its edge is supported by the chuck pin 22b of the holding section 20, so that the rotating body 10 is held on the table 10a.

Next, the rotating body 10 rotates at a relatively low predetermined speed (for example, about 50 rpm). Thereby, the substrate W rotates together with the holding section 20 at the predetermined speed. That is, the rotating body 10 rotates the substrate W held by the holding unit 20. Then, the processing liquid holding section 42 is positioned at the above-mentioned retracted position, and the supply mechanism 41 supplies carbonated water to the surface of the substrate W from the processing liquid supply pipe 41c. When carbonated water is supplied to the surface of the rotating substrate W, the carbonated water sequentially moves toward the outer periphery of the substrate W, so that the amount of charge on the surface of the substrate W decreases and discharge is suppressed. Note that the processing liquid flowing toward the outer circumference of the substrate W is discharged to the outside through the gap between the chuck pins 22b.

Next, the supply mechanism 41 stops supplying carbonated water. Further, the processing liquid holding section 42 is lowered to be positioned at the above-mentioned processing position. With the processing liquid holding section 42 positioned at the processing position, the supply mechanism 41 supplies SPM to the gap between the processing liquid holding section 42 and the surface of the substrate W. Specifically, sulfuric acid and hydrogen peroxide are simultaneously supplied from each treatment liquid tank 41a, and both are mixed inside the treatment liquid supply pipe 41c to form SPM. When sulfuric acid and hydrogen peroxide are mixed, heat is generated due to a chemical reaction, so the SPM is at a high temperature inside the processing liquid supply pipe 41c. Such high temperature SPM is supplied to the substrate W. At this time, since the surface of the processing liquid holding section 42 facing the substrate W is close to the SPM liquid film formed on the surface of the substrate W, the surface of the processing liquid holding section 42 and the substrate W is close to each other. The SPM supplied between the two is heated by a heater 441 provided in the processing liquid holding section 42, and becomes further heated to a high temperature.

In this way, when SPM is continuously supplied to the surface of the rotating substrate W, the SPM sequentially moves toward the outer periphery of the substrate W, and the carbonated water on the surface of the substrate W is replaced by the SPM. , the resist formed on the surface of the substrate W is removed due to the strong oxidizing power of Caro's acid possessed by SPM. At this time, the high-temperature SPM liquid film formed on the surface of the substrate W is heated by the heater 441, becomes even hotter, and vaporizes. When this vaporized SPM cools, it turns into steam M, which fills the space between the processing liquid holding section 42 and the substrate W. The steam M generated from the heated processing liquid is not easily affected by the downflow occurring inside the processing chamber due to the processing liquid holding section 42 provided opposite to the substrate W. It stays between the substrate W and the substrate W.

Next, the supply mechanism 41 stops supplying sulfuric acid and supplies hydrogen peroxide solution as a rinsing liquid to the gap between the processing liquid holding section 42 and the surface of the substrate W. This is because the sulfuric acid component in SPM that remains on the surface of the substrate W is washed away while reacting with the hydrogen peroxide solution supplied as a rinsing liquid, thereby preventing the sulfuric acid component from remaining on the surface of the substrate W. It can be prevented. When the hydrogen peroxide solution is supplied to the surface of the rotating substrate W, the hydrogen peroxide solution sequentially moves toward the outer periphery of the substrate W, thereby replacing the SPM on the surface of the substrate W with the hydrogen peroxide solution. Ru. At this time, the high-temperature SPM is heated by the heater 441 to reach an even higher temperature, so the temperature difference between it and the room-temperature hydrogen peroxide solution is large, and a large amount of steam M is generated over the entire surface of the substrate W. In this way, a large amount of steam M generated from the rinsing liquid supplied to the heated processing liquid fills the space between the processing liquid holding section 42 and the substrate W. Note that here, it is assumed that the steam M includes hydrogen peroxide water generated by heating the hydrogen peroxide solution at room temperature by the heater 441. The steam M stays between the processing liquid holding part 42 and the substrate W because the processing liquid holding part 42 provided opposite to the substrate W makes it less susceptible to the downflow occurring inside the processing chamber. . Then, the processing liquid holding unit 42 stops supplying the hydrogen peroxide solution.

Next, the detection unit 60 irradiates the steam M generated between the processing liquid holding unit 42 and the substrate W with light such as infrared rays. As described above, the detection section 60 may irradiate infrared rays toward the space between the processing liquid holding section 42 and the substrate W, or may irradiate infrared rays toward the inside of the cup section 30 from which steam M leaks. Infrared rays may also be irradiated. The detection unit 60 transmits the detection of steam M to the control device 70.

Next, the control device 70 operates the gas supply mechanism 52 of the removal section 50. Thereby, the removing unit 50 supplies the gas G from the opening 51a of the delivery pipe 51 so as to push out the steam M from the narrow space between the processing liquid holding unit 42 and the substrate W positioned at the processing position. Drive out the steam M. The expelled steam M is carried away by a downflow occurring inside the processing chamber, and is exhausted to the outside through an exhaust port V provided at the bottom of the cup portion 30 through an exhaust pipe P communicating with the exhaust port V. Ru. Note that when the detection unit 60 stops detecting steam M, it transmits to the control device 70 that steam M is not detected. In this case, the control device 70 controls the gas supply mechanism 52 of the removal unit 50 to stop supplying the gas G.

Finally, the processing liquid holding section 42 moves up to a retracted position away from the substrate W, and supplies pure water to the gap between the processing liquid holding section 42 and the surface of the substrate W from the discharge port 42a. When pure water is supplied to the surface of the rotating substrate W, the pure water sequentially moves toward the outer periphery of the substrate W, thereby washing away the hydrogen peroxide solution on the surface of the substrate W. Then, after a predetermined cleaning time has elapsed, the processing liquid holding section 42 stops supplying pure water.

Thereafter, the robot hand of the transfer robot is inserted under the substrate W, the holding of the substrate W by the chuck pins 22b of the holding section 20 is released, and the substrate W is carried out by the robot hand of the transfer robot. When the substrate W is carried out, the next substrate to be processed is carried in. In this manner, in this embodiment, the removal section 50 removes the steam M before a new substrate (an unprocessed substrate) is carried into the processing chamber.

[effect]
(1) The substrate processing apparatus 1 of the present embodiment includes a holding section 20 that holds a substrate W carried into a processing chamber, a rotating body 10 that rotates the substrate W held by the holding section 20, and a rotating body 10 that rotates the substrate W held by the holding section 20. A supply mechanism 41 that supplies a processing liquid to the surface of the substrate W held by the substrate W and a rinsing liquid to the processing liquid supplied to the surface of the substrate W; A processing liquid holding section 42 that is provided facing each other and has a larger diameter than the substrate W, and a processing position that is close to the processing liquid film formed on the surface of the substrate W and the surface of the substrate W. an elevating mechanism 43 that raises and lowers the substrate W between a retracted position and a retracted position spaced from the substrate W; A cup part 30 that is provided to surround the substrate W, receives and drains the processing liquid scattered from the substrate W, and exhausts the downflow inside the processing chamber, and and a removing section 50 that removes steam M generated between the processing liquid holding section 42 and the substrate W from the rinsing liquid supplied thereto.

In conventional substrate processing equipment, if steam remains between the processing liquid holding part and the substrate even after the substrate is carried out, there is a risk of contaminating the surface of the substrate that is carried in for next processing. there were. On the other hand, the substrate processing apparatus 1 of this embodiment can remove the steam M generated between the processing liquid holding section 42 and the substrate W by the removal section 50. This suppresses the possibility that steam M will adhere to the surface of the substrate to be carried in for next processing and contaminate the surface of this substrate. FIG. 3(A) shows the degree of contamination of a substrate carried in with steam stagnant as in the conventional case, and FIG. 3(B) shows the degree of contamination of a substrate carried in after steam M has been removed by the removal unit 50 of the present embodiment. The degree of contamination is shown respectively. As is clear from comparing FIGS. 3(A) and 3(B), when the steam M is removed by the removal unit 50, the degree of contamination of the next substrate to be carried in is greatly reduced.

(2) The removal unit 50 of this embodiment includes a gas supply mechanism 52 that supplies gas G to the steam M generated between the processing liquid holding unit 42 and the substrate W. In conventional substrate processing apparatuses, steam is blocked by the processing liquid holding section and is difficult to exhaust due to the downflow inside the processing chamber. On the other hand, the removing unit 50 of this embodiment expels the steam M from between the processing liquid holding unit 42 and the substrate W by the gas supply mechanism 52, so the steam M is carried on the downflow inside the processing chamber and is exhausted. It can be exhausted from the pipe P.

(3) The substrate processing apparatus 1 of the present embodiment includes a detection unit 60 that detects steam M, and the removal unit 50 removes steam M when steam M is detected. This makes it possible to save time for operating the removing section 50, for example, in a process where there is a small temperature difference between the processing liquid and the rinsing liquid and no steam M is generated, so that manufacturing efficiency can be improved.

[Modified example]
This embodiment is not limited to the above aspects. For example, the number of conveyance tubes 51 in the removal section 50 is not limited to one. As shown in FIG. 4, a plurality of delivery tubes 51 may be inserted through the supply section 40. As a result, the gas G is evenly supplied in the space between the supply unit 40 and the substrate W, and the steam M can be efficiently discharged, so that the time required to remove the steam M can be shortened. . Note that in FIG. 4, illustration of each part is simplified for ease of explanation.

Moreover, although the removing unit 50 of the above embodiment had the gas supply mechanism 52 that supplies the gas G, the present invention is not limited to this. As shown in FIG. 5, a gas suction mechanism 53 may be provided instead of the gas supply mechanism 52. The gas suction mechanism 53 is provided at the other end of the communication tube 51 similarly to the gas supply mechanism 52 . The gas suction mechanism 53 is an exhaust mechanism including a negative pressure source (not shown), and sucks the steam M generated between the supply section 40 and the substrate W from the communication pipe 51. The gas suction mechanism 53 is connected to the exhaust pipe P and exhausts the sucked steam M from the exhaust pipe P. Thereby, the steam M can be removed without relying on the downflow inside the processing chamber. Further, when a plurality of passage tubes 51 are inserted as described above, a plurality of gas suction mechanisms 53 may be provided correspondingly. Note that in FIG. 5, illustration of each part is simplified for ease of explanation.

Further, the removal unit 50 includes a gas supply mechanism 52 and a gas suction mechanism 53, and the steam M may be removed by using both of them together. In this case, it is preferable to insert two passage pipes 51 into the supply section 40, and provide a gas supply mechanism 52 in one and a gas suction mechanism 53 in the other. Further, as shown in FIG. 6, instead of the feed pipe 51, a pair of nozzles 54A and 54B may be provided so as to sandwich the substrate W from the sides. The nozzles 54A and 54B are provided at positions that do not interfere with the vertical movement of the cup part 30, the vertical movement of the processing liquid holding part 42, and the detection by the detection part 60. An opening 54a is provided at one end of the nozzles 54A, 54B. The opening 54a is provided toward the space between the supply section 40 and the substrate W. A gas supply mechanism 52 is provided at the other end of the nozzle 54A, and a gas suction mechanism 53 is provided at the other end of the nozzle 54B.

By operating the gas supply mechanism 52 and the gas suction mechanism 53 at the same time, the gas G supplied from the nozzle 54A expels the steam M toward the nozzle 54B, and the nozzle 54B sucks and exhausts the steam M. Further, the operation of this modification is performed when the processing liquid holding section 42 is positioned at the retracted position. That is, in the above-described embodiment, the processing liquid holding section 42 is positioned at the retracted position after the removal section 50 removes the steam M, but in this modification, the processing liquid holding section 42 is positioned at the retracted position. After that, the gas supply mechanism 52 and the gas suction mechanism 53 operate. Specifically, after the processing liquid holding section 42 is positioned at the retracted position, pure water is supplied, so that the steam M spreads around the substrate W. When the detecting section 60 detects this spread steam M, the gas supply mechanism 52 and the gas suction mechanism 53 operate, and the steam M is removed. On the other hand, when the processing liquid holding section 42 is not positioned at the retracted position, the gas supply mechanism 52 and the gas suction mechanism 53 are controlled so as not to operate even if the detection section 60 detects steam M. Also good. In addition, in FIG. 6, illustration of each part is simplified for ease of explanation.

Further, only the nozzle 54A may be provided instead of the pair of nozzles 54A and 54B. In this case, as shown in FIG. 7, an exhaust port Q communicating with the exhaust pipe P and a shutter R that can open and close the exhaust port Q may be provided on the wall surface of the clean room. The exhaust port Q is opened, for example, at a position facing the nozzle 54A with the substrate W interposed therebetween. The shutter R is driven by an air cylinder or a motor and is provided to open and close the exhaust port Q. Similarly to the case where the pair of nozzles 54A and 54B described above are provided, after the processing liquid holding section 42 is positioned at the retracted position, the gas supply mechanism 52 and the shutter R are simultaneously operated, so that the gas is supplied from the nozzle 54A. The gas G can expel steam M from between the supply section 40 and the substrate W, and exhaust it from the exhaust port Q. In addition, in FIG. 7, illustration of each part is simplified for ease of explanation.

Although the detection section 60 in the above embodiment is of a reflective type in which the light projecting section and the light receiving section are integrated, the detection section 60 is not limited to this. As the detection section 60, a transmissive type in which a light projecting section and a light receiving section are separate bodies may be adopted. In this case, the light projecting section and the light receiving section are preferably provided so as to sandwich the space above the substrate W from the sides. Further, the detection unit 60 is not limited to a photoelectric sensor, and may be an imaging unit such as a camera. In this case, the captured image acquired by the imaging unit may be transmitted to the control device 70, and the control device 70 may determine whether or not the steam M is reflected in the captured image.

Furthermore, the detection section 60 may be omitted. In this case, the removing unit 50 should be operated at the timing when steam M is generated, for example, at the timing when hydrogen peroxide solution is supplied, or at the timing when pure water is supplied after the processing liquid holding unit 42 is positioned at the retreat position. Bye. Furthermore, after operating the removing section 50, the removing section 50 may be automatically stopped when a predetermined period of time has elapsed. The predetermined time is, for example, the time from when the removal unit 50 starts operating until the processed substrate W is unloaded and the next substrate is loaded.

Although the plurality of types of processing liquids in the above embodiment are supplied from the processing liquid supply pipe 41c of the supply mechanism 41, the present invention is not limited thereto. For example, it may be supplied from the feed pipe 51 of the removal section 50. For example, the other end of the delivery pipe 51 is bifurcated, and the gas supply mechanism 52 is provided on one side, and the processing liquid tank 41a, the delivery pipe 41b, the flow rate adjustment valve 41d, and the flow meter 41e are provided on the other side. Also good. Thereby, for example, both gas G and pure water can be supplied from the feed pipe 51.

Further, in addition to the supply mechanism 41, another supply mechanism may be provided that includes a processing liquid tank, a processing liquid supply pipe, etc., like the supply mechanism 41. Accordingly, for example, the supply mechanism 41 may supply SPM, and another supply mechanism may supply hydrogen peroxide solution and pure water as a rinsing liquid. In this case, the processing liquid supply pipe of another supply mechanism is also inserted into the processing liquid holding section 42 in the same way as the processing liquid supply pipe 41c and the delivery pipe 51.

[Other embodiments]
The embodiments of the present invention and modifications of each part have been described above, but these embodiments and modifications of each part are presented as examples, and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included within the scope and gist of the invention, and are also included in the invention described in the claims.

1 Substrate processing apparatus 10 Rotating body 11 Fixed base 12 Motor 13 Rotating mechanism 20 Holding section 21 Rotating member 22 Holding member 23 Drive mechanism 231 Drive shaft 232 Small gear 233 Large gear 30 Cup section 40 Supply section 41 Supply mechanism 42 Processing liquid holding Section 43 Lifting mechanism 44 Heating section 441 Heater 50 Removal section 51 Conveying tube 52 Gas supply mechanism 53 Gas suction mechanism 60 Detection section 70 Control device A Rotating shaft F Filter G Gas M Steam P Exhaust pipe Q Exhaust port R Shutter V Exhaust port W board

Claims (8)

a holding part that holds the substrate carried into the processing chamber;
a rotating body that rotates the substrate held by the holding part;
a supply mechanism that supplies a processing liquid to the surface of the substrate held by the holding section and supplies a rinsing liquid to the processing liquid supplied to the surface of the substrate;
a processing liquid holding portion having a diameter larger than that of the substrate, the processing liquid holding portion being provided opposite to the surface of the substrate held by the holding portion;
an elevating mechanism that raises and lowers the processing liquid holding unit between a processing position close to a liquid film of the processing liquid formed on the surface of the substrate and a retreat position spaced apart from the surface of the substrate;
a heating unit that heats the processing liquid supplied to the surface of the substrate held by the holding unit;
a cup part that is provided to surround the substrate held by the holding part, receives and drains a processing liquid scattered from the substrate, and exhausts downflow inside the processing chamber;
a removal unit that removes steam generated between the processing liquid holding unit and the substrate from the heated processing liquid and a rinsing liquid supplied to the heated processing liquid;
A substrate processing apparatus having: The removal section has a gas supply mechanism that supplies gas to the steam generated between the processing liquid holding section and the substrate.
The substrate processing apparatus according to claim 1. The removing section has a gas suction mechanism that sucks the steam generated between the processing liquid holding section and the substrate.
The substrate processing apparatus according to claim 1. The removal section is
a gas supply mechanism that supplies gas to the steam generated between the processing liquid holding section and the substrate;
a gas suction mechanism that suctions the steam generated between the processing liquid holding section and the substrate;
The substrate processing apparatus according to claim 1, having: comprising a detection unit that detects the steam,
The removal unit removes the steam when the steam is detected.
A substrate processing apparatus according to any one of claims 1 to 4. The removing section removes the steam generated between the processing liquid holding section and the substrate while the processing liquid holding section is positioned at the processing position.
A substrate processing apparatus according to any one of claims 1 to 5. The removing section removes the steam generated between the processing liquid holding section and the substrate while the processing liquid holding section is positioned at the retreated position.
A substrate processing apparatus according to any one of claims 1 to 5. The removing unit removes the steam before a new substrate is carried into the processing chamber.
A substrate processing apparatus according to any one of claims 1 to 7.