CN116895560A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN116895560A
CN116895560A CN202310314406.6A CN202310314406A CN116895560A CN 116895560 A CN116895560 A CN 116895560A CN 202310314406 A CN202310314406 A CN 202310314406A CN 116895560 A CN116895560 A CN 116895560A
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CN
China
Prior art keywords
substrate
hot gas
processing liquid
processing
holding portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310314406.6A
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Chinese (zh)
Inventor
金井隆宏
土持鹰彬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
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Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of CN116895560A publication Critical patent/CN116895560A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention provides a substrate processing apparatus, which can inhibit the contact between the hot gas generated between the processing liquid holding part and the substrate and the surface of the substrate newly carried into the processing chamber during the processing of the substrate. The invention comprises: a holding unit configured to hold a substrate carried into a processing chamber; a rotating body that rotates the substrate; a supply mechanism for supplying a processing liquid to the surface of the substrate and supplying a rinse liquid to the processing liquid supplied to the surface of the substrate; a treatment liquid holding portion provided so as to face the surface of the substrate held by the holding portion, and having a larger diameter than the substrate; a lifting mechanism for lifting the treatment liquid holding part between a treatment position close to a liquid film of the treatment liquid formed on the surface of the substrate and a retreating position separated from the surface of the substrate; a heating unit configured to heat the processing liquid supplied to the surface of the substrate held by the holding unit; and a removing unit that removes hot gas generated between the processing liquid holding unit and the substrate from the heated processing liquid and the rinse liquid supplied to the heated processing liquid.

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus.
Background
A substrate processing apparatus is known which removes a resist formed on a surface of a substrate such as a semiconductor wafer by a processing liquid having a strong oxidizing power such as a sulfuric acid/hydrogen peroxide mixture (Sulfuric Peroxide Mixture, SPM) (a mixture liquid obtained by mixing sulfuric acid with hydrogen peroxide water). The substrate processing apparatus includes a processing liquid holding portion provided to face a surface of a substrate. The processing liquid holding unit holds the processing liquid supplied from the supply mechanism. The treatment liquid holding portion is provided with a heater for heating the treatment liquid. Thus, the substrate processing apparatus supplies the high-temperature processing liquid to the substrate, and peels off the resist formed on the surface of the substrate.
The processing liquid holding unit heats the processing liquid not only before the processing liquid is supplied to the substrate, but also after the processing liquid is supplied to the substrate, and maintains the processing liquid at a high temperature. Therefore, as shown in patent document 1, the treatment liquid holding portion has a larger diameter than the substrate and is provided so as to cover the entire surface of the substrate.
[ Prior Art literature ]
[ patent literature ]
[ patent document 1] International publication No. 2011/090141
Disclosure of Invention
[ problem to be solved by the invention ]
In the step of processing a substrate, a normal-temperature rinse liquid is supplied to a high-temperature processing liquid supplied to the substrate so as to rinse the processing liquid from the substrate. At this time, the rinse liquid is rapidly heated and boiled due to a temperature difference between the processing liquid and the rinse liquid, and a large amount of hot gas is generated over the entire surface of the substrate. The hot gas is mostly the hot gas of the rinse liquid cooled after the vaporization, but also the hot gas of the treatment liquid. The processing liquid becomes a liquid film that covers the substrate when supplied to the substrate, and vapor generated from the liquid film cools to become hot gas. In a processing chamber in which a substrate processing apparatus is disposed, since a downward flow is generally generated from a Fan Filter Unit (FFU) provided on a ceiling of the processing chamber, such hot gas flows downward in the processing chamber and is exhausted to the outside through a cup portion provided so as to surround a substrate.
However, as described above, if the treatment liquid holding portion having a larger diameter than the substrate is provided so as to cover the substrate, the downward flow is blocked, and the hot gas fills between the treatment liquid holding portion and the substrate and stays. The hot gas does not flow downward in the process chamber, and therefore, there is a concern that the hot gas does not pass through the cup and is exhausted to the outside. When a new substrate (unprocessed substrate) is carried in this state, the hot gas retained in the state may contact the substrate, and the components of the processing liquid contained in the hot gas may adhere to the surface of the substrate in the form of particles. Even if the substrate is treated with the treating liquid in a state where the particles are attached, the particles cannot be completely removed, and the quality of the substrate may be poor.
An object of an embodiment of the present invention is to provide a substrate processing apparatus that suppresses contact between hot gas generated between a processing liquid holding portion and a substrate and a surface of the substrate newly carried into a processing chamber during processing of the substrate.
[ means of solving the problems ]
The substrate processing apparatus according to the embodiment includes: a holding unit configured to hold a substrate carried into a processing chamber; a rotating body that rotates the substrate held by the holding portion; a supply mechanism configured to supply a processing liquid to the surface of the substrate held by the holding portion, and to supply a rinse liquid to the processing liquid supplied to the surface of the substrate; a treatment liquid holding portion provided so as to face a surface of the substrate held by the holding portion, and having a larger diameter than the substrate; a lifting mechanism for lifting the treatment liquid holding portion between a treatment position close to a liquid film of the treatment liquid formed on the surface of the substrate and a retracted position away from the surface of the substrate; a heating unit configured to heat a processing liquid supplied to a surface of the substrate held by the holding unit; and a removing unit configured to remove hot gas generated between the processing liquid holding unit and the substrate from the heated processing liquid and a rinse liquid supplied to the heated processing liquid.
[ Effect of the invention ]
According to the embodiment of the invention, the substrate processing device can restrain the hot air generated between the processing liquid holding part and the substrate during the processing of the substrate from contacting with the surface of the substrate newly carried into the processing chamber.
Drawings
Fig. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment.
Fig. 2 is a plan view showing an operation of a holding portion of the substrate processing apparatus of fig. 1.
Fig. 3 is a graph comparing contamination levels of substrates according to the prior art and the embodiment.
Fig. 4 is a diagram showing a configuration of a removal portion according to a modification.
Fig. 5 is a diagram showing a structure of a removal portion according to another modification.
Fig. 6 is a diagram showing a structure of a removal portion according to another modification.
Fig. 7 is a diagram showing a structure of a removal portion according to another modification.
[ description of symbols ]
1: substrate processing apparatus
10: rotating body
10a: working table
11: fixed base
12: motor with a motor housing
13: rotary mechanism
20: holding part
21: rotating member
22: retaining member
22a: inclined surface
22b: chuck pin
23: driving mechanism
30: cup part
40: supply part
41: supply mechanism
41a: treatment liquid tank
41b, 51: conveying pipe
41c: treatment liquid supply pipe
41d: flow regulating valve
41e: flowmeter for measuring flow rate
42: treatment liquid holding part
42a, 42b: jet outlet
43: lifting mechanism
44: heating part
50: removal part
51a, 54a: an opening
52: gas supply mechanism
53: gas suction mechanism
54A, 54B: nozzle
60: detection unit
70: control device
231: driving shaft
232: pinion gear
233: gear wheel
441: heater
441a, 441b: through hole
A: rotary shaft
F: filter device
G: gas and its preparation method
M: hot gas
P: exhaust pipe
Q: exhaust port
R: shutter device
V: exhaust port
W: substrate board
Alpha, beta 1, beta 2, gamma: arrows
Detailed Description
Structure
Hereinafter, an embodiment of the present invention (hereinafter, also referred to as "the present embodiment") will be described with reference to the drawings. The substrate processing apparatus 1 is an apparatus for processing a substrate W by supplying a processing liquid to a surface of the substrate W while holding and rotating the substrate W. The substrate W to be processed is, for example, a circular silicon semiconductor wafer. As shown in fig. 1, the substrate processing apparatus 1 includes: the rotary body 10, the holding portion 20, the cup portion 30, the supply portion 40, the removal portion 50, and the detection portion 60. Further, a controller 70 for controlling each part of the substrate processing apparatus 1 is connected to the substrate processing apparatus 1. In the following description, the direction of the opposing gravity is set to be up and the direction following the gravity is set to be down, but the direction of installation of the substrate processing apparatus 1 is not limited.
The substrate processing apparatus 1 is disposed in a processing chamber, for example. A Filter F such as an ultra low penetration air Filter (Ultra Low Penetration Air Filter, ULPA Filter) is provided on the ceiling of the processing chamber. Inside the processing chamber, a downward flow is generated from above to below through an air supply port, not shown, provided through the filter F. The downward flow is discharged from an exhaust port V opened at the bottom of the cup 30 described later to the outside through an exhaust pipe P communicating with the exhaust port V. Specifically, the exhaust pipe P is connected to an exhaust apparatus of a factory provided with the substrate processing apparatus 1. Thereby, the downward flow passes through the exhaust pipe P to exhaust the air to the outside.
The rotating body 10 is rotatably provided on a not-shown installation surface or a fixed base 11 about a rotation axis a by a rotation mechanism 13 having a motor 12, and the fixed base 11 is fixed to a stand provided on the installation surface. The rotary body 10 has a cylindrical shape with one end blocked by the table 10 a. The stage 10a is a circular surface having a larger diameter than the substrate W, and faces the substrate W held by the holding portion 20 with a gap therebetween.
The holding portion 20 is a member that holds the substrate W in parallel with the table 10a with a space therebetween, and is provided in the rotating body 10. That is, the holding portion 20 is provided to be rotatable by the rotating body 10. Six holding portions 20 are provided at equal intervals along the periphery of the table 10 a. Each holding portion 20 includes a rotating member 21, a holding member 22, and a driving mechanism 23.
As shown in fig. 2, the rotating members 21 are six cylindrical members arranged at equal intervals along the periphery of the substrate W. The rotation member 21 is provided rotatably about an axis parallel to the rotation axis a of the rotation body 10. The top surface of the rotating member 21 is exposed from the table 10 a.
The holding member 22 is provided so as to protrude upward at a position eccentric from the rotation center of the top surface of each rotation member 21. The holding members 22 are the same in number as the rotating members 21, and six are provided. The holding member 22 has an inclined surface 22a and a chuck pin 22b. The inclined surface 22a is a surface inclined so as to be higher from the center side of the rotating body 10 toward the outer peripheral edge, and is brought into contact with the edge of the substrate W as the rotating member 21 rotates. The chuck pin 22b is a protrusion of a cylindrical shape provided at the upper end of the inclined surface 22a, and is a crown of the holding member 22. The chuck pins 22b have necks on the side surfaces into which the edge portions of the substrate W are fitted.
The holding member 22 moves between a holding position (see fig. 2 a) for holding the substrate W by being in contact with the edge of the substrate W and an open position (see fig. 2B) for opening the substrate W by being away from the edge of the substrate W in accordance with the rotation of the rotating member 21. In the present embodiment, the six chuck pins 22b are finally brought into contact with the edge of the substrate W to hold the substrate W.
The driving mechanism 23 moves the holding member 22 between the holding position and the open position by rotating the rotating member 21. The drive mechanism 23 includes a drive shaft 231, a pinion gear 232, and a large gear 233. The drive shaft 231 is a cylindrical member provided coaxially with the rotation axis of the rotary member 21 on the opposite side of the rotary member 21 from the top surface.
The pinion 232 is a sector gear provided at an end of the drive shaft 231 opposite to the rotating member 21. The large gear 233 is a gear in which gear grooves are intermittently formed corresponding to the small gear 232. The large gear 233 is rotatably provided coaxially with the rotary body 10 by the rotary mechanism 13 that rotates the rotary body 10. The large gear 233 has six protrusions formed at predetermined intervals in the circumferential direction at intervals corresponding to the small gear 232, and a gear groove for meshing with the small gear 232 is formed on the outer peripheral surface of the tip end of each protrusion.
The large gear 233 is biased in the rotation direction (counterclockwise direction) indicated by an arrow α in fig. 2a by a biasing member such as a spring, not shown. As a result, the pinion 232 is biased in the clockwise direction indicated by the arrow β1, and therefore the rotation member 21 and the pinion 232 rotate, and the chuck pins 22b move in the center direction of the rotating body 10 and remain in the holding position abutting the substrate W. In addition, at the time of substrate processing, the rotary member 21, the driving shaft 231, the chuck pins 22b, the pinion gear 232, and the large gear 233 are rotated together with the rotary body 10 in a state where the holding position is maintained.
The large gear 233 is prevented from rotating by a stopper mechanism, not shown. In a state where rotation of the large gear 233 is prevented, as shown in fig. 2 (B), when the rotating body 10 is rotated in the arrow γ direction, the small gear 232 engaged with the large gear 233 whose rotation is prevented is rotated in the counterclockwise direction shown by the arrow β2. Thereby, the rotating member 21 rotates, and therefore, the chuck pins 22b move in a direction away from the edge of the substrate W to the open position.
The cup portion 30 is a cylindrical member that receives the processing liquid scattered from the rotating substrate W, and is provided so as to surround the rotating body 10 and the holding portion 20. That is, the cup portion 30 is provided so as to surround the substrate W held by the holding portion 20. The cup portion 30 is opened upward to expose the substrate W held by the holding portion 20. Further, the upper portion of the cup portion 30 is inclined radially inward. The cup portion 30 includes a lifting mechanism, not shown, and is provided to be capable of being lifted up to receive the processing liquid and lowered down so as not to interfere with the loading and unloading of the substrate W. The processing liquid received by the cup 30 flows along the inside of the cup 30, and is discharged from a pipe, not shown, provided at the bottom of the cup 30. The exhaust port V is provided at the bottom of the cup 30, and exhausts the down flow generated in the processing chamber. In this way, the cup 30 receives and discharges the processing liquid scattered from the substrate W, and exhausts the downward flow in the processing chamber.
The supply unit 40 is a member for supplying the processing liquid to the surface of the substrate W, that is, the surface of the substrate W held by the holding unit 20 opposite to the table 10a side, and is provided above the rotating body 10 and the holding unit 20. The supply unit 40 includes: a supply mechanism 41, a treatment liquid holding portion 42, a lifting mechanism 43, and a heating portion 44.
The supply mechanism 41 is a mechanism for supplying a plurality of types of processing liquids or rinse liquids. The supply mechanism 41 of the present embodiment supplies, for example, carbonated water, deionized water (DIW), sulfuric acid, and hydrogen peroxide water. The supply means 41 supplies the sulfuric acid and the hydrogen peroxide water simultaneously, and thereby supplies the SPM, which is a mixed solution of both, as the treatment liquid. Hereinafter, the SPM is referred to as a treatment liquid, and the hydrogen peroxide water is referred to as a rinse liquid. The supply mechanism 41 includes: a treatment liquid tank 41a, a delivery pipe 41b, a treatment liquid supply pipe 41c, a flow rate adjustment valve 41d, and a flow meter 41e.
The processing liquid tank 41a is a container for storing each processing liquid. In each treatment liquid tank 41a, a transfer pipe 41b is connected in parallel to a treatment liquid supply pipe 41 c. The tip of the processing liquid supply tube 41c faces the substrate W held by the holding portion 20. Thus, the processing liquid stored in each processing liquid tank 41a is supplied to the surface of the substrate W through the transfer pipe 41b and the processing liquid supply pipe 41 c. Each of the delivery pipes 41b is provided with a flow rate adjustment valve 41d for adjusting the flow rate of the processing liquid, and a flow meter 41e for measuring the flow rate of the processing liquid.
The processing liquid holding portion 42 is circular with a diameter larger than that of the substrate W, and has a basin shape by forming a wall rising to the opposite side of the rotating body 10 at the peripheral edge portion. The outer bottom surface of the processing liquid holding portion 42 faces the substrate W. The processing liquid holding portion 42 is formed with an ejection port 42a through which the tip of the processing liquid supply pipe 41c is inserted and exposed to the substrate W side, and an ejection port 42b through which the tip of a transport pipe 51 of the removing portion 50 described later is inserted and exposed to the substrate W side. The discharge port 42a is provided at a position eccentric from the central axis of the treatment liquid holding portion 42. The position is a position at which the processing liquid can be supplied to the center of the surface of the substrate W.
The lifting mechanism 43 is a mechanism for moving the processing liquid holding portion 42 in a direction approaching and separating from the substrate W. As the lifting mechanism 43, various mechanisms such as a cylinder and a ball screw mechanism can be used to move the treatment liquid holding portion 42 in a direction parallel to the rotation axis a of the rotating body 10. The lifting mechanism 43 lifts and lowers the treatment liquid holding portion 42 between the treatment position and the retracted position. The processing position is a position where the surface of the processing liquid holding portion 42 facing the substrate W is close to the liquid film of the processing liquid formed on the surface of the substrate W. The retracted position is a position where a surface of the processing liquid holding portion 42 facing the substrate W is separated from the surface of the substrate W so that the substrate W can be carried in and carried out of the substrate processing apparatus 1.
The heating section 44 has a heater 441 provided on a surface of the processing liquid holding section 42 opposite to a surface facing the substrate W, and the processing liquid supplied from the supply mechanism 41 to the surface of the substrate W is heated to, for example, 180 ℃ to 200 ℃ by the heater 441. Thereby, vapor is generated from the liquid film of the processing liquid formed on the surface of the substrate W, and the vapor cools, thereby generating hot gas between the processing liquid holding portion 42 and the substrate W. The heater 441 has a circular sheet shape. The heater 441 has a through hole 441a through which the treatment liquid supply pipe 41c is inserted, and a through hole 441b through which the tip of the removing portion 50 described later is inserted.
When the supply mechanism 41 supplies the normal temperature, for example, 25 ℃ rinse liquid to the processing liquid heated on the surface of the substrate W by the heater 441, the rinse liquid is rapidly heated and boiled to evaporate, and the evaporated rinse liquid is cooled, whereby a large amount of hot gas is generated between the processing liquid holding portion 42 of the supply portion 40 and the substrate W from the entire surface of the substrate W. In the following description, the hot gas and the hot gas generated from the liquid film of the treatment liquid are also collectively referred to as hot gas M. The hot gas M fills and stays between the processing liquid holding portion 42 and the substrate W.
The removal unit 50 is a member that removes the hot gas M that has remained between the processing liquid holding unit 42 and the substrate W. The removing section 50 includes a duct 51 and a gas supply mechanism 52. One end of the transport pipe 51 is inserted into the processing liquid holding portion 42 and the heating portion 44, and is provided so as to be exposed to the substrate W side. That is, the opening 51a of the transfer tube 51 is provided on the substrate W side of the processing liquid holding portion 42. The other end of the transport pipe 51 is connected to a gas supply mechanism 52. The gas supply mechanism 52 sends N to the delivery pipe 51 2 Or a gas G such as air, and is supplied from the opening 51a. Thereby, the removing part 50 supplies the gas G to the hot gas M from the opening 51a, and drives out the hot gas M from between the processing liquid holding part 42 and the substrate W。
The detection unit 60 is a sensor such as a photoelectric sensor, for example, and detects the hot air M. The photoelectric sensor of the present embodiment will be described as a reflection type sensor in which a light projecting section and a light receiving section are integrated. The detection unit 60 is provided laterally to the holding unit 20 so that the optical axis is directed to the space between the processing liquid holding unit 42 and the substrate W, and is positioned so as not to interfere with the lifting operation of the cup 30. The detecting unit 60 irradiates light such as infrared rays toward the space between the processing liquid holding unit 42 and the substrate W, and detects the hot gas M of the processing liquid. The detection unit 60 transmits the detection of the hot air M to a control device 70 described later.
Further, the position for setting the detection portion 60 is not limited to the side of the holding portion 20. For example, the cup may be provided on a wall surface of the processing chamber or may be provided on an inclined upper portion of the cup 30. Further, the swing arm may be provided to a not-shown swing arm. In this case, the detection unit 60 is provided so as to be movable between the cup 30 and the treatment liquid holding unit 42 by a swing arm.
Further, the detection unit 60 may be provided, for example, so as to radiate infrared rays toward the inside of the cup portion 30, so as to detect not only the hot gas M generated between the processing liquid holding portion 42 and the substrate W, but also the hot gas M leaking from between the processing liquid holding portion 42 and the substrate W. The position of the detector 60 is not limited to this, and may be any position as long as it can detect the hot gas M leaking from between the processing liquid holder 42 and the substrate W.
The control device 70 is connected to the substrate processing apparatus 1, and includes a processor for executing a program, a memory for storing various information such as a program and operation conditions, and a driving circuit for driving each element in order to realize the functions of the substrate processing apparatus 1. That is, the control device 70 controls the rotary body 10, the holding portion 20, the supply portion 40, the removal portion 50, the detection portion 60, and the like. The control device 70 includes an input device for inputting information and a display device for displaying information.
[ Effect ]
Next, a substrate process by the substrate processing apparatus 1 will be described. The substrate W mounted on the robot arm of the transfer robot is carried between the processing liquid holding portion 42 and the rotating body 10, and the edge portion thereof is supported by the chuck pins 22b of the holding portion 20, thereby being held on the table 10a of the rotating body 10.
Then, the rotary body 10 rotates at a relatively low predetermined speed (for example, about 50 rpm). Thereby, the substrate W rotates at the predetermined speed together with the holding portion 20. That is, the rotating body 10 rotates the substrate W held by the holding portion 20. The treatment liquid holding portion 42 is positioned at the retracted position, and the supply mechanism 41 supplies carbonated water from the treatment liquid supply pipe 41c to the surface of the substrate W. When carbonated water is supplied to the surface of the rotating substrate W, the carbonated water moves in sequence toward the outer periphery of the substrate W, and thus the charge amount of the surface of the substrate W decreases, and discharge is suppressed. The processing liquid flowing out toward the outer periphery of the substrate W is discharged to the outside through the gap between the chuck pins 22b.
Next, the supply mechanism 41 stops the supply of the carbonated water. Further, the treatment liquid holding portion 42 is lowered to be positioned at the treatment position. In a state where the processing liquid holding portion 42 is positioned at the processing position, the supply mechanism 41 supplies the SPM to the gap between the processing liquid holding portion 42 and the surface of the substrate W. Specifically, sulfuric acid and hydrogen peroxide water are simultaneously supplied from each treatment liquid tank 41a, and both are mixed in the treatment liquid supply pipe 41c to become SPM. When sulfuric acid is mixed with hydrogen peroxide water, heat is generated by a chemical reaction, and thus the SPM becomes high temperature in the treatment liquid supply pipe 41 c. Such high-temperature SPM is supplied to the substrate W. At this time, the surface of the processing liquid holding portion 42 facing the substrate W approaches the liquid film of the SPM formed on the surface of the substrate W, and therefore the SPM supplied between the processing liquid holding portion 42 and the surface of the substrate W is heated by the heater 441 provided in the processing liquid holding portion 42, and further becomes high temperature.
When the SPM is continuously supplied to the surface of the substrate W, the SPM is sequentially moved toward the outer periphery of the substrate W, whereby the carbonated water on the surface of the substrate W is replaced with the SPM, and the resist formed on the surface of the substrate W is removed by the strong oxidizing force of the caro acid possessed by the SPM. At this time, the liquid film of the SPM formed on the surface of the substrate W is heated by the heater 441 to be further heated to a high temperature, and vaporized. The vaporized SPM cools to become hot gas M, and fills the space between the processing liquid holding portion 42 and the substrate W. The hot gas M generated from the heated processing liquid passes through the processing liquid holding portion 42 provided to face the substrate W, is less susceptible to the downward flow generated in the processing chamber, and is thus retained between the processing liquid holding portion 42 and the substrate W.
Next, the supply mechanism 41 stops the supply of sulfuric acid, and supplies hydrogen peroxide water as a rinse solution to the gap between the processing liquid holding portion 42 and the surface of the substrate W. Accordingly, the sulfuric acid component in the SPM remaining on the surface of the substrate W is washed away while reacting with the hydrogen peroxide water supplied as the rinse liquid, and thus the sulfuric acid component can be prevented from remaining on the surface of the substrate W. When hydrogen peroxide water is supplied to the surface of the rotating substrate W, the hydrogen peroxide water sequentially moves toward the outer periphery of the substrate W, whereby the SPM of the surface of the substrate W is replaced with the hydrogen peroxide water. At this time, the SPM having a high temperature is heated by the heater 441 to be further heated to a high temperature, and thus a temperature difference from the hydrogen peroxide water having a normal temperature becomes large, and a large amount of hot gas M is generated over the entire surface of the substrate W. In this way, a large amount of hot gas M generated from the rinse liquid supplied to the heated processing liquid fills the space between the processing liquid holding portion 42 and the substrate W. Here, the substance generated by heating the hydrogen peroxide water at normal temperature by the heater 441 is also contained in the hot gas M. The hot gas M is less susceptible to the downward flow generated in the process chamber by the process liquid holding portion 42 provided opposite to the substrate W, and thus stays between the process liquid holding portion 42 and the substrate W. Then, the treatment liquid holding unit 42 stops the supply of the hydrogen peroxide water.
Next, the detection unit 60 irradiates the hot gas M generated between the processing liquid holding unit 42 and the substrate W with light such as infrared rays. As described above, the detection unit 60 may irradiate the space between the processing liquid holding unit 42 and the substrate W with infrared rays, or may irradiate the inside of the cup 30 where the hot gas M leaks. The detection unit 60 transmits the detection of the hot air M to the control device 70.
Next, the control device 70 operates the gas supply mechanism 52 of the removing unit 50. Thereby, the removing portion 50 supplies the gas G from the opening 51a of the transfer tube 51, and drives out the hot gas M so as to squeeze out the hot gas M from the narrow space between the processing liquid holding portion 42 positioned at the processing position and the substrate W. The expelled hot gas M flows down to the inside of the processing chamber, and is discharged to the outside from an exhaust port V provided at the bottom of the cup 30 through an exhaust pipe P communicating with the exhaust port V. Further, when the hot air M is no longer detected, the detection unit 60 transmits a case where the hot air M is not detected to the control device 70. In this case, the control device 70 controls the gas supply mechanism 52 of the removing unit 50 to stop the supply of the gas G.
Finally, the processing liquid holder 42 is raised to a retracted position away from the substrate W, and pure water is supplied from the discharge port 42a to a gap between the processing liquid holder 42 and the surface of the substrate W. When pure water is supplied to the surface of the substrate W that rotates, the pure water sequentially moves toward the outer periphery of the substrate W, thereby flushing the surface of the substrate W with hydrogen peroxide water. Then, when a predetermined cleaning time elapses, the treatment liquid holding portion 42 stops the supply of the pure water.
Thereafter, the robot arm of the transfer robot is inserted below the substrate W, the chuck pins 22b of the holding portion 20 are opened to hold the substrate W, and the substrate W is carried out by the robot arm of the transfer robot. When the substrate W is carried out, the substrate to be processed next is carried in. As described above, in the present embodiment, the hot gas M is removed by the removing unit 50 before a new substrate (unprocessed substrate) is carried into the processing chamber.
[ Effect ]
(1) The substrate processing apparatus 1 of the present embodiment includes: a holding unit 20 for holding a substrate W carried into the processing chamber; a rotating body 10 that rotates the substrate W held by the holding portion 20; a supply mechanism 41 for supplying a processing liquid to the surface of the substrate W held by the holding portion 20 and supplying a rinse liquid to the processing liquid supplied to the surface of the substrate W; a treatment liquid holding portion 42 provided so as to face the surface of the substrate W held by the holding portion 20, and having a larger diameter than the substrate W; a lifting mechanism 43 for lifting the processing liquid holding portion 42 between a processing position close to a liquid film of the processing liquid formed on the surface of the substrate W and a retracted position away from the surface of the substrate W; a heating unit 44 for heating the processing liquid supplied to the surface of the substrate W held by the holding unit 20; a cup portion 30 provided so as to surround the substrate W held by the holding portion 20, for receiving and discharging the processing liquid scattered from the substrate W, and for exhausting the downward flow in the processing chamber; and a removing unit 50 for removing hot gas M generated between the processing liquid holding unit 42 and the substrate W from the heated processing liquid and the rinse liquid supplied to the heated processing liquid.
In the conventional substrate processing apparatus, if the hot air remains between the processing liquid holding portion and the substrate after the substrate is carried out, there is a concern that the surface of the substrate carried in for the subsequent processing may be contaminated. On the other hand, in the substrate processing apparatus 1 of the present embodiment, the hot gas M generated between the processing liquid holding portion 42 and the substrate W can be removed by the removing portion 50. This can suppress the possibility that the hot air M adheres to the surface of the substrate carried in for the subsequent processing and contaminates the surface of the substrate. Fig. 3 (a) shows the contamination level of the substrate carried in a state where the hot gas is retained as in the conventional case, and fig. 3 (B) shows the contamination level of the substrate carried in after the hot gas M is removed by the removing unit 50 according to the present embodiment. As is clear from a comparison between fig. 3 (a) and 3 (B), when the hot gas M is removed by the removing unit 50, the contamination level of the substrate carried in next is greatly reduced.
(2) The removing section 50 of the present embodiment includes a gas supply mechanism 52 for supplying the gas G to the hot gas M generated between the processing liquid holding section 42 and the substrate W. In the conventional substrate processing apparatus, the hot gas M is not easily exhausted in the downward flow in the processing chamber while being blocked by the processing liquid holding portion. On the other hand, the removal unit 50 of the present embodiment drives out the hot gas M from between the processing liquid holding unit 42 and the substrate W by the gas supply mechanism 52, and thus can exhaust the hot gas M from the exhaust pipe P as the inside of the processing chamber descends.
(3) The substrate processing apparatus 1 of the present embodiment includes a detection unit 60 for detecting the hot air M, and the removal unit 50 removes the hot air M when the hot air M is detected. This saves time for operating the removing unit 50 in a process in which, for example, the temperature difference between the treatment liquid and the rinse liquid is small and the hot gas M is not generated, and thus improves the manufacturing efficiency.
Modification example
The present embodiment is not limited to the above-described embodiments. For example, the number of the transport pipes 51 of the removing portion 50 is not limited to one. As shown in fig. 4, a plurality of transport pipes 51 may be inserted into the supply unit 40. Accordingly, the gas G is uniformly supplied to the space between the supply unit 40 and the substrate W, and the hot gas M can be efficiently discharged, so that the time required for removing the hot gas M can be shortened. In fig. 4, the illustration of each part is simplified for convenience of explanation.
The removing unit 50 of the embodiment has a gas supply mechanism 52 for supplying the gas G, but is not limited thereto. As shown in fig. 5, a gas suction mechanism 53 may be provided instead of the gas supply mechanism 52. The gas suction means 53 is provided at the other end of the transport pipe 51, similarly to the gas supply means 52. The gas suction mechanism 53 is an exhaust mechanism including a negative pressure source, not shown, and sucks the hot gas M generated between the supply unit 40 and the substrate W from the transport pipe 51. The gas suction mechanism 53 is connected to the exhaust pipe P, and exhausts the sucked hot gas M from the exhaust pipe P. Thereby, the hot gas M can be removed without depending on the down flow inside the process chamber. In addition, in the case where the plurality of transport pipes 51 are inserted as described above, a plurality of gas sucking mechanisms 53 may be provided in accordance with this. In fig. 5, the illustration of each part is simplified for convenience of explanation.
The removal unit 50 includes a gas supply mechanism 52 and a gas suction mechanism 53, and may remove the hot gas M by both of them. In this case, two transport pipes 51 may be inserted into the supply portion 40, one of which is provided with the gas supply mechanism 52, and the other of which is provided with the gas suction mechanism 53. As shown in fig. 6, a pair of nozzles 54A and 54B may be provided so as to sandwich the substrate W from the side instead of the transport pipe 51. The nozzles 54A and 54B are provided at positions that do not interfere with the lifting operation of the cup portion 30, the lifting operation of the treatment liquid holding portion 42, and the detection by the detection portion 60. An opening 54A is provided at one end of the nozzle 54A, 54B. The opening 54a is provided toward a space between the supply portion 40 and the substrate W. A gas supply mechanism 52 is provided at the other end of the nozzle 54A, and a gas suction mechanism 53 is provided at the other end of the nozzle 54B.
By operating the gas supply mechanism 52 and the gas suction mechanism 53 simultaneously, the gas G supplied from the nozzle 54A drives out the hot gas M toward the nozzle 54B, and the nozzle 54B sucks and exhausts the hot gas M. The operation of the modification is performed when the treatment liquid holding portion 42 is positioned at the retracted position. That is, in the above embodiment, the treatment liquid holding portion 42 is positioned at the retracted position after the removal portion 50 removes the hot gas M, but in the above modification, the gas supply mechanism 52 and the gas suction mechanism 53 are operated after the treatment liquid holding portion 42 is positioned at the retracted position. Specifically, after the processing liquid holding portion 42 is positioned at the retracted position, the pure water is supplied, and the hot gas M spreads around the substrate W. The diffused hot gas M is detected by the detecting section 60, and the gas supplying mechanism 52 and the gas sucking mechanism 53 are operated, so that the hot gas M is removed. On the other hand, when the treatment liquid holding portion 42 is not positioned at the retracted position, even if the hot gas M is detected by the detecting portion 60, the gas supply mechanism 52 and the gas suction mechanism 53 can be controlled not to operate. In fig. 6, the illustration of each part is simplified for convenience of explanation.
In addition, only the nozzle 54A may be provided instead of the pair of nozzles 54A, 54B. In this case, as shown in fig. 7, an exhaust port Q communicating with the exhaust pipe P and a shutter R capable of opening and closing the exhaust port Q may be provided on the wall surface of the clean room. The exhaust port Q is opened, for example, at a position facing the nozzle 54A through the substrate W. The shutter R is driven by a cylinder or a motor, and is provided to be capable of opening and closing the exhaust port Q. In the same manner as in the case of providing the pair of nozzles 54A and 54B, after the treatment liquid holding portion 42 is positioned at the retracted position, the gas G supplied from the nozzle 54A can be exhausted from the exhaust port Q by driving the gas supply mechanism 52 and the shutter R simultaneously, and the hot gas M can be expelled from between the supply portion 40 and the substrate W. In fig. 7, the illustration of each part is simplified for convenience of explanation.
The detection unit 60 of the embodiment is a reflection type detection unit in which the light projecting unit and the light receiving unit are integrated, but the invention is not limited thereto. As the detection unit 60, a transmission type detection unit in which the light projecting unit and the light receiving unit are separated may be used. In this case, the light projecting section and the light receiving section may be provided so as to sandwich a space above the substrate W from the side surface. The detection unit 60 is not limited to a photoelectric sensor, and may be an imaging unit such as a camera. In this case, the captured image obtained by the image pickup unit is transmitted to the control device 70, and the control device 70 may determine whether or not the hot air M is reflected in the captured image.
Further, the detection unit 60 may be omitted. In this case, the removal unit 50 may be operated in accordance with the timing of generating the hot gas M, for example, the timing of supplying the hydrogen peroxide water, or the timing of supplying the pure water after the treatment liquid holding unit 42 is positioned at the retracted position. After the removal unit 50 is operated, the removal unit 50 may be automatically stopped when a predetermined time has elapsed. For example, the predetermined time is a time period after the start of the operation of the removing unit 50, after which the substrate W after the completion of the processing is carried out and the substrate is carried in next.
The plurality of processing liquids in the above embodiment are supplied from the processing liquid supply pipe 41c of the supply mechanism 41, but not limited thereto. For example, the liquid may be supplied from the duct 51 of the removing portion 50. For example, the other end of the transfer pipe 51 may be divided into two, one of which is provided with the gas supply mechanism 52, and the other of which is provided with the treatment liquid tank 41a, the transfer pipe 41b, the flow rate adjustment valve 41d, and the flow meter 41e. Thus, for example, both the gas G and the pure water can be supplied from the transport pipe 51.
In addition to the supply mechanism 41, other supply mechanisms including a treatment liquid tank, a treatment liquid supply pipe, and the like may be provided similarly to the supply mechanism 41. Thus, for example, the SPM may be supplied from the supply means 41, and the hydrogen peroxide water and the pure water may be supplied as the rinse liquid from the other supply means. In this case, the treatment liquid supply pipe of the other supply means is inserted into the treatment liquid holding portion 42 in the same manner as the treatment liquid supply pipe 41c and the transport pipe 51.
Other embodiments
While the embodiments and the modifications of the respective parts of the present invention have been described above, the embodiments and the modifications of the respective parts are presented as examples, and are not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other modes, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims.

Claims (10)

1. A substrate processing apparatus includes:
a holding unit configured to hold a substrate carried into a processing chamber;
a rotating body that rotates the substrate held by the holding portion;
a supply mechanism configured to supply a processing liquid to the surface of the substrate held by the holding portion, and to supply a rinse liquid to the processing liquid supplied to the surface of the substrate;
a treatment liquid holding portion provided so as to face a surface of the substrate held by the holding portion, and having a larger diameter than the substrate;
a lifting mechanism for lifting the treatment liquid holding portion between a treatment position close to a liquid film of the treatment liquid formed on the surface of the substrate and a retracted position away from the surface of the substrate;
a heating unit configured to heat the processing liquid supplied to the surface of the substrate held by the holding unit; and
and a removing unit configured to remove hot gas generated between the processing liquid holding unit and the substrate from the heated processing liquid and the rinse liquid supplied to the heated processing liquid.
2. The substrate processing apparatus according to claim 1, wherein,
the removing section has a gas supply mechanism that supplies a gas to the hot gas generated between the processing liquid holding section and the substrate.
3. The substrate processing apparatus according to claim 1, wherein,
the removing portion has a gas sucking mechanism that sucks the hot gas generated between the processing liquid holding portion and the substrate.
4. The substrate processing apparatus according to claim 1, wherein,
the removing section has:
a gas supply mechanism configured to supply a gas to the hot gas generated between the processing liquid holding portion and the substrate; and
and a gas suction mechanism for sucking the hot gas generated between the processing liquid holding portion and the substrate.
5. The substrate processing apparatus according to claim 1,
has a detection part for detecting the hot gas,
the removing section removes the hot gas when the hot gas is detected by the detecting section.
6. The substrate processing apparatus according to claim 2,
has a detection part for detecting the hot gas,
the removing section removes the hot gas if the hot gas is detected.
7. The substrate processing apparatus according to claim 3,
has a detection part for detecting the hot gas,
the removing section removes the hot gas if the hot gas is detected.
8. The substrate processing apparatus according to any one of claims 1 to 7, wherein,
the removing unit removes the hot gas generated between the processing liquid holding unit and the substrate in a state where the processing liquid holding unit is positioned at the processing position.
9. The substrate processing apparatus according to any one of claims 1 to 7, wherein,
the removing unit removes the hot gas generated between the processing liquid holding unit and the substrate in a state where the processing liquid holding unit is positioned at the retracted position.
10. The substrate processing apparatus according to claim 1, wherein,
the removing unit removes the hot gas before a new substrate is carried into the processing chamber.
CN202310314406.6A 2022-04-04 2023-03-28 Substrate processing apparatus Pending CN116895560A (en)

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JP2022-062633 2022-04-04
JP2022062633A JP2023152532A (en) 2022-04-04 2022-04-04 Wafer processing device

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CN116895560A true CN116895560A (en) 2023-10-17

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