TW202038487A - Optical semiconductor device - Google Patents

Abstract

Provided is an optical semiconductor device suitable for achieving high light use efficiency while still suppressing strain such as warp. An optical semiconductor device X1 according to the present invention is provided with an optical semiconductor element E, a resin molded body 10, and leads 20, 30. The resin molded body 10 has an opening 10A with accompanying light-reflecting inner wall surface 11 and partial bottom surface 12. The lead 20 has an exposed surface 21 that faces the opening 10A of the resin molded body 10 and that constitutes a portion of the bottom surface of the opening and has an exposed surface exposed on the opposite side from the opening 10A. The lead 30 has an exposed surface 31 that is located on the partial bottom surface 12 of the opening 10A of the resin molded body 10 and that faces the opening 10A. In a direction D2, which is orthogonal to a direction D1 in which the leads 20, 30 are separated, this exposed surface 31 is smaller than an edge 21a of the exposed surface 21 of the lead 20, said edge 21a being on the lead 30 side. The optical semiconductor element E is mounted on the exposed surface 21 of the lead 20 and is connected to the exposed surface 31 of the lead 30 via a bonding wire W.

Description

Optical semiconductor device

The present invention relates to an optical semiconductor device provided with optical semiconductor elements such as light emitting diodes. This application claims the priority of Special Application No. 2018-227881 filed in Japan on December 5, 2018, and the content is quoted here.

Compared with other light sources such as light bulbs, fluorescent lamps, neon tubes, and halogen lamps, optical semiconductor devices equipped with light-emitting diodes and other optical semiconductor elements have the advantages of long life, stable operation, and fast response speed. Such optical semiconductor devices are being put into practical use in various applications. For example, in lighting applications (general indoor lighting or street lights in homes, offices, etc.), display applications (traffic signs, etc.), light sources (LCD TV backlights, etc.), and communication applications (infrared remote controls, etc.). About such an optical semiconductor device, it is described in the following patent documents 1-3, for example. [Prior Art Literature] [Patent Literature]

[Patent Document 1] JP 2006-140207 A [Patent Document 2] JP 2008-252135 A [Patent Document 3] JP 2017-76701 A

[The problem to be solved by the invention]

14 to 16 show an optical semiconductor device Y as an example of a conventional optical semiconductor device. The optical semiconductor device Y is formed in the form of a so-called molded array package (MAP), and includes a resin molded body 110, a set of leads 120, 130, an LED element 140 as a light emitting diode, and a transparent resin portion 150.

The resin molded body 110 is a resin body that is molded to maintain the form of the leads 120 and 130 by so-called insert molding of the leads 120 and 130, and has an opening 112 whose opening shape is defined by an inclined surface 111. Light reflectivity is given to at least the inclined surface 111 in the resin molded body 110 in a specific aspect. The lead 120 has an exposed surface 121 facing the opening 112 and an exposed surface 122 exposed to the outside of the device on the side opposite to the opening 112. The lead 130 has an exposed surface 131 facing the opening 112 and an exposed surface 132 exposed to the outside of the device on the side opposite to the opening 112. The exposed surfaces 121 and 131 of the leads 120 and 130 form a pair of terminals for external connection in the optical semiconductor device Y. The LED element 140 has electrode portions (not shown) on the upper surface side and the lower surface side in FIG. 15 respectively, and is mounted on the exposed surface 121 in the opening 112 to be electrically and mechanically connected to the lead 120. In addition, the LED element 140 is electrically connected to the exposed surface 131 of the lead 130 via the bonding wire W. The transparent resin part 150 is a transparent resin body filled in the opening 112 of the resin molded body 110 and cured, and seals the LED element 140 and the like in the opening 112.

In the optical semiconductor device Y having such a structure, when light is emitted from the LED element 140, the light is reflected or not reflected in the opening 112, passes through the transparent resin portion 150, and is emitted to the outside of the opening 112.

In an optical semiconductor device having a part formed by integral molding of a resin molded body (resin molded body 110 in optical semiconductor device Y) and lead members (leads 120 and 130 in optical semiconductor device Y), the resin molded body and There is a significant difference in thermal expansion rate between the lead members. Therefore, in the previous manufacturing process or installation process of the optical semiconductor device, the above-mentioned difference in thermal expansion rate caused internal stress everywhere in the optical semiconductor device, which resulted in the warpage and other strains of the device. Strains such as warpage in the optical semiconductor device may cause structural deterioration such as partial detachment of the lead member from the resin molded body, and even deterioration of characteristics.

On the other hand, in optical semiconductor devices, there have previously been cases where sufficient brightness corresponding to the application cannot be obtained.

The present invention was conceived based on the above circumstances, and its object is to provide an optical semiconductor device suitable for suppressing strains such as warpage and achieving high light utilization efficiency. [Means to Solve the Problem]

According to the present invention, an optical semiconductor device is provided. The optical semiconductor device includes an optical semiconductor element, a first lead and a second lead separated from each other, and a resin molded body integrated with the leads.

In the resin molding system, for example, a resin body molded by partially receiving the first and second leads inside by insert molding. In addition, the resin molded body has an opening as an opening of the reflector along with an inner wall surface for light reflection and a part of the bottom surface for light reflection (a part of the bottom surface forms a part of the bottom surface of the opening). The inner wall surface of the opening of the reflector is preferably inclined in such a way that the shape of the opening expands from the bottom surface of the opening to the opening end.

The first lead has a first exposed surface facing the opening of the resin molded body to form a part of the bottom surface of the opening, and has a second exposed surface exposed on the side opposite to the opening. The optical semiconductor element is mounted on the first exposed surface of the first lead. Furthermore, the first lead preferably has an electrode portion extending from the resin molded body to the outside. With this aspect, the first lead is partially covered and held by the resin molded body.

The second lead has a third exposed surface that is located on a part of the bottom surface of the opening of the resin molded body and faces the opening. The third exposed surface (part of the second lead) on part of the bottom surface is in the direction orthogonal to the separation direction of the first and second leads, and is smaller than the first exposed surface (part of the first lead) on the part of the bottom The edge of the 2nd lead side. The optical semiconductor element on the first exposed surface of the first lead is connected to the third exposed surface via bonding wires. In addition, the second lead preferably has an electrode portion extending from the resin molded body to the outside. With this aspect, the second lead is partially covered and held by the resin molded body.

In the optical semiconductor device having the above configuration, the third exposed surface of the second lead is smaller than the first exposed surface of the first lead in the direction orthogonal to the separation direction of the first and second leads as described above 2nd lead side edge. The third exposed surface of the second lead has a width narrower than the second lead side edge of the first exposed surface of the first lead in a direction (width direction) orthogonal to the separation direction of the two leads. Such a structure is preferable in terms of suppressing strain such as warpage in the optical semiconductor device. The reason is as follows.

In an optical semiconductor device having a part where a resin molded body and a lead member are integrally molded, there is a significant difference in thermal expansion coefficient between the resin molded body and the lead member. Therefore, in fact, the larger the lead member or its area (for example, the larger the proportion of the lead member in a body of the resin molded body and the lead member in a specific range), the greater the amount of the lead member through the optical semiconductor device manufacturing process Or the greater the internal stress generated by the optical semiconductor device during the installation process. This internal stress may cause strain such as warpage in the manufactured optical semiconductor device. In the optical semiconductor device of the present invention, the third exposed surface of the second lead has a narrower width than the first exposed surface of the first lead as described above, and the third exposed surface and the second lead including the third exposed surface have a small area Miniaturization or miniaturization is preferable in terms of reducing the internal stress generated by the optical semiconductor device, and therefore, in terms of suppressing strain such as warpage of the device.

Furthermore, in the present optical semiconductor device, the third exposed surface of the second lead (the part of the second lead facing the reflector opening) is located on the part of the bottom surface of the resin molded body in the reflector opening as described above. That is, the surface of the second lead opposite to the third exposed surface is covered with the resin molded body and is in close contact with the resin molded body. Such a configuration is preferable in terms of suppressing deformation of the second lead including the third exposed surface region, and therefore, in terms of suppressing distortion such as warpage of the optical semiconductor device.

In addition, on the bottom surface of the above-mentioned reflector opening in the optical semiconductor device, as described above, the third exposed surface of the second lead is in the direction (width direction) orthogonal to the separation direction of the first and second leads The width (located on part of the bottom surface of the opening) is narrower than the first exposed surface of the first lead. A region of a part of the bottom surface that is a part of the resin molded body that directly faces the opening of the reflector expands around the third exposed surface of the second lead in the bottom surface of the opening. Such a configuration is preferable for a part of the bottom surface that is a part of the resin molded body in terms of ensuring the area of the region directly facing the opening of the reflector. There is a tendency that the larger the area of the part of the bottom surface, the larger the total area of the resin surface responsible for the light reflection function in the opening of the reflector. Therefore, when light is emitted from the optical semiconductor element located in the opening, it passes through the opening The more light is reflected out of the opening. That is, as for the part of the bottom surface of the resin molded body, the larger the area of the area directly facing the opening of the reflector, the higher the light utilization efficiency in the optical semiconductor device.

As described above, the optical semiconductor device of the present invention is suitable for suppressing strain such as warpage and achieving high light utilization efficiency. In optical semiconductor devices, the suppression of strains such as warpage helps to ensure high light-emitting reliability. In optical semiconductor devices, the realization of higher light utilization efficiency helps to ensure higher energy efficiency. Therefore, the optical semiconductor device is suitable for being designed as a light emitting device with high light emitting reliability and good energy efficiency.

In the present optical semiconductor device, the area of the third exposed surface is preferably 30% or less of the area of the first exposed surface, more preferably 25% or less, and even more preferably 20% or less. Such a structure is preferable for reducing the internal stress generated by the optical semiconductor device by reducing the area or size of the third exposed surface and the second lead containing it, and therefore, it is effective in suppressing the warpage and other strains of the device The aspect is better. In addition, this configuration is better in terms of ensuring the area of the area directly facing the opening of the reflector for a part of the bottom surface of the resin molded body, and is more effective in terms of achieving higher light utilization efficiency in the optical semiconductor device. good.

In the optical semiconductor device, the opening (reflector opening) of the resin molded body may have a circular opening shape such as a perfect circle, or may have an opening shape extending along the separation direction of the first and second leads. Examples of the shape of the opening extending in the above manner include an ellipse and a rectangle with rounded corners.

In the optical semiconductor device, when the opening portion (reflector opening portion) of the resin molded body has an opening shape extending in the manner described above, the opening portion preferably includes a wide area and a narrow area defined by the inner wall surface. The width area and the width gradient area between the wide area and the narrow area, and these have opening shapes arranged along the separation direction of the first and second leads (optical semiconductor on the first exposed surface of the first lead The component is located in a wide area, for example). More preferably, in the gradual width region of the opening of the resin molded body, the inner wall surface of the opening has an inner curved surface. These structures help to achieve higher light utilization efficiency.

1 to 5 show an optical semiconductor device X1 according to an embodiment of the present invention. FIG. 1 is a perspective view of the optical semiconductor device X1, and FIG. 2 is a plan view of the optical semiconductor device X1. 3 is a cross-sectional view of the optical semiconductor device X1 along the line III-III of FIG. 2, and FIG. 4 is a cross-sectional view of the optical semiconductor device X1 along the line IV-IV of FIG. 2. Fig. 5 is a rear view of the optical semiconductor device X1.

The optical semiconductor device X1 includes an optical semiconductor element E, a resin molded body 10, leads 20 and 30 separated from each other, and a transparent resin portion 40. The optical semiconductor device X1 is formed in the form of a so-called Molded Array Package (MAP) in this embodiment.

The optical semiconductor element E is an element having a light emitting function, and is specifically a light emitting diode (LED) element in this embodiment. Examples of semiconductor materials for constituting the LED element include GaAlAs, AlInGaP, InGaN, GaP, GaAs, and GaAsP. Furthermore, in this embodiment, the optical semiconductor element E has electrode parts (not shown) on the upper surface side and the lower surface side in FIG. 2, respectively.

The resin molded body 10 is a resin body in which the leads 20 and 30 are partially housed and molded by insert molding, for example. In addition, the resin molded body 10 has an opening 10A as a reflector opening along with an inner wall surface 11 for light reflection and a partial bottom surface 12 for light reflection (part of the bottom surface 12 forms a part of the bottom surface of the opening 10A). The inner wall surface 11 of the opening 10A defines the opening shape of the opening 10A. In this embodiment, the opening shape is inclined in a manner that the opening shape expands from the bottom surface of the opening 10A to the opening end. In addition, a cutout as a so-called cathode mark (not shown) can be formed at a specific place on the side of the opening 10A in the resin molded body 10 (for example, in the plan view shown in FIG. 2 is closer to the lead 30 than the lead 20) ). Such a resin molded body 10 is composed of, for example, a thermosetting resin composition containing a white pigment. As this thermosetting resin, epoxy resin is mentioned, for example. Examples of white pigments blended with thermosetting resins include titanium oxide, aluminum oxide, zinc oxide, magnesium oxide, antimony oxide, and zirconium oxide. As a commercially available product of the resin material for forming the resin molded body 10, for example, "AEW-700" manufactured by Daicel Co., Ltd. can be cited.

The lead 20 (first lead) as shown in FIGS. 1 and 2 has an exposed surface 21 (first exposed surface) that faces the opening 10A of the resin molded body 10 and forms a part of the bottom surface of the opening 10A, and has The exposed surface 22 (second exposed surface) exposed on the side opposite to the opening 10A. The above-mentioned optical semiconductor element E is mounted on the exposed surface 21 of the lead 20 via a conductive bonding material such as a soldering material or a conductive adhesive, and is electrically and mechanically connected to the lead 20. A part of the heat emitted from the optical semiconductor element E during the light-emitting driving of the optical semiconductor device X1 can be released to the outside of the device through the exposed surfaces 21 and 22 of the lead 20. The lead wire 20 also assumes this heat release function. In addition, the lead 20 has an electrode portion 20a extending from the resin molded body 10 to the outside. The length of the electrode portion 20a extending from the resin molded body 10 is, for example, 0.1 to 2 mm. With this aspect, the lead 20 is partially covered and held by the resin molded body 10.

As shown in FIGS. 1 and 2, the lead 30 (second lead) has an exposed surface 31 (third exposed surface) that is located on a part of the bottom surface 12 of the opening 10A of the resin molded body 10 and faces the opening 10A. The exposed surface 31 (a part of the lead 30) on the part of the bottom surface 12 is in a direction D ₂ orthogonal to the separation direction D _{1 of the} leads 20 and 30, which is smaller than the exposed surface 21 (a part of the lead 20) on the part of the bottom surface 12 The edge 21a on the side of the lead 30 (shown as a thick line in FIG. 2). The optical semiconductor element E on the exposed surface 21 of the lead 20 is electrically connected to the exposed surface 31 via a bonding wire W. In addition, the lead 30 has an electrode portion 30a extending from the resin molded body 10 to the outside. The length of the electrode portion 30a extending from the resin molded body 10 is, for example, 0.1 to 2 mm. With this aspect, the lead 30 is partially covered and held by the resin molded body 10.

The leads 20 and 30 are respectively made of conductive metal materials. As the metal material for the lead, for example, Cu, Cu alloy, and 42% Ni-Fe alloy can be cited. The thickness of the leads 20 and 30 is, for example, 0.1 to 0.3 mm, respectively. Such leads 20 and 30 can be formed by etching or stamping a metal plate, for example. The surface of the leads 20 and 30 may also be subjected to specific plating treatments such as Ag plating treatment.

The transparent resin part 40 is a transparent resin body filled in the opening 10A of the resin molded body 10 and cured, and is composed of a transparent semiconductor sealing material. Examples of such sealing materials include epoxy-based sealing materials and silicone-based sealing materials. Examples of commercially available epoxy-based sealing materials include "CELVENUS W0973" and "CELVENUS W0925" manufactured by Daicel Co., Ltd. Examples of commercially available silicone-based sealing materials include "CELVENUS A2045" and "CELVENUS A0246" manufactured by Daicel Co., Ltd.

Such an optical semiconductor element X is manufactured by, for example, the following so-called wire mold method. First, prepare a specific lead frame. The lead frame has a rectangular frame in a plan view, and a pattern portion having a specific pattern shape in each of the optical semiconductor device formation regions lined up in the frame. The pattern part includes the lead part forming the aforementioned leads 20 and 30, the connecting part connecting the lead part and the frame, and the connecting part connecting the lead parts. Such a lead frame can be manufactured by etching processing, for example. Then, the above-mentioned resin molded body 10 is formed in each optical semiconductor device formation region of the lead frame. Specifically, for a set of molds having a molding surface for forming a plurality of resin molded bodies 10 across a plurality of optical semiconductor device formation regions in a lead frame, the above-mentioned lead frame is interposed and the mold is locked, and then the mold The thermosetting resin composition containing the white pigment used for forming the resin molded body 10 is fed into the mold under the temperature conditions and pressure conditions for molding (insert molding). Thereby, the resin molded body 10 accompanying the said opening part 10A is formed in each optical semiconductor device formation area. As the molding method, for example, transfer molding or injection molding is used. After the forming step, in the opening 10A of each optical semiconductor device formation region, by assembling the optical semiconductor element E through the conductive bonding material on the exposed surface 21 of the lead 20, the optical semiconductor element E and the lead 30 The wire bonding of the exposed surface 31 and the transparent resin portion 40 are formed by, for example, potting. Then, for each optical semiconductor device formation region, the above-mentioned connecting portion of the pattern portion in the lead frame is cut, the leads 20 and 30 are separated, and the optical semiconductor device X1 is separated. For example, the optical semiconductor device X1 can be manufactured in the above-mentioned manner.

When the optical semiconductor device X1 is driven, a specific power is supplied to the optical semiconductor element E through the leads 20 and 30, whereby the optical semiconductor element E emits light. One part of the light emitted from the optical semiconductor element E is reflected in the opening 10A of the resin molded body 10, and the other part of the light emitted from the optical semiconductor element E is not reflected in the opening 10A, but passes through the transparent resin part 40. The opening 10A is projected outside.

An optical semiconductor device X1 as in the above, the exposed surface 31 of lead 30 as described above, the partition is smaller than the lead wire in a direction orthogonal to the direction 20 and _{30. 1} D of the D ₂₂₀ on the exposed end surface 21 of the edge 21a ( It is represented by thick lines in Figure 2). The exposed surface 31 of the lead 30 has a width narrower than the edge 21a on the lead 30 side of the exposed surface 21 in a direction D ₂ (width direction) orthogonal to the separation direction D _{1 of the} two leads 20 and 30. Such a configuration is preferable in terms of suppressing distortion such as warpage in the optical semiconductor device X1. The reason is as follows.

In an optical semiconductor device having a part where a resin molded body and a lead member are integrally molded, there is a significant difference in thermal expansion coefficient between the resin molded body and the lead member. Therefore, in fact, the larger the lead member or its area (for example, the larger the proportion of the lead member in a body of the resin molded body and the lead member in a specific range), the greater the amount of the lead member through the optical semiconductor device manufacturing process Or the greater the internal stress generated by the optical semiconductor device during the installation process. This internal stress may cause strain such as warpage in the manufactured optical semiconductor device. The exposed surface 31 of the lead 30 in the above-mentioned optical semiconductor device X1 is configured to have a width narrower than the exposed surface 21 of the lead 20 as described above, and the exposed surface 31 and the lead 30 containing it are reduced in size or miniaturization. The optical semiconductor device X1 is better in terms of internal stress, and therefore, it is better in terms of suppressing strain such as warpage of the optical semiconductor device X1.

In addition, in the optical semiconductor device X1, the exposed surface 31 of the lead 30 (the part of the lead 30 facing the opening 10A as the reflector opening) is located in the opening 10A as a part of the resin molded body 10 as described above On the bottom surface 12. That is, the surface of the lead 30 on the opposite side to the exposed surface 31 is covered by the resin molded body 10 and is in close contact with the resin molded body 10. Such a configuration is preferable in terms of suppressing deformation of the lead 30 including the exposed surface 31 area, and therefore, in terms of suppressing distortion such as warpage of the optical semiconductor device X1.

In addition, on the bottom surface of the opening 10A (reflector opening) in the optical semiconductor device X1, as described above, in the direction D ₂ (width direction) orthogonal to the separation direction D _{1 of the} leads 20, 30, the lead 30 The exposed surface 31 (located on part of the bottom surface 12 of the opening 10A) has a narrower width than the exposed surface 21 of the lead 20. A part of the bottom surface 12 that is a part of the resin molded body 10 directly faces the opening 10A. The bottom surface of the opening 10A expands around the exposed surface 31 of the lead 30 as fully shown in FIG. 2. Such a structure is preferable in terms of ensuring the area of the area directly facing the opening 10A for the part of the bottom surface 12 that is a part of the resin molded body 10. There is a tendency that the larger the area of the part of the bottom surface 12, the larger the total area of the resin surface that is responsible for the light reflection function in the opening 10A (reflector opening). Therefore, the optical semiconductor element E located in the opening 10A When light is emitted, the amount of light emitted to the outside of the opening 10A through reflection in the opening 10A is greater. That is, for a part of the bottom surface 12 that is a part of the resin molded body 10, the larger the area of the area directly facing the opening 10A, the higher the light utilization efficiency in the optical semiconductor device X1.

As described above, the optical semiconductor device X1 of this embodiment is suitable for suppressing distortion such as warpage and achieving high light utilization efficiency. In the optical semiconductor device X1, the suppression of strain such as warpage helps to ensure high light-emitting reliability. In the optical semiconductor device X1, the realization of higher light utilization efficiency helps to ensure higher energy efficiency. Therefore, the optical semiconductor device X1 is suitable for designing a light emitting device with high light emitting reliability and good energy efficiency.

In the optical semiconductor device X1, the area of the exposed surface 31 in the opening 10A in the lead 30 is preferably 30% or less of the area of the exposed surface 21 in the opening 10A in the lead 20, more preferably 25% or less, More preferably, it is 20% or less. Such a configuration is preferable in terms of reducing the area or size of the exposed surface 31 and the leads 30 containing it to reduce the internal stress generated by the optical semiconductor device X1. Therefore, it is useful for suppressing warpage of the optical semiconductor device X1, etc. The strain aspect is better. In addition, this configuration is better for the part of the bottom surface 12 that is a part of the resin molded body 10 in terms of ensuring the area of the region directly facing the opening 10A, or in terms of achieving higher light utilization efficiency in the optical semiconductor device X1 .

Optical semiconductor device X1, the resin molded body 10 of an opening portion 10A (an opening portion of the reflector) of the opening may have a circular shape, it may also have leads 20 and 30 along the direction D of the opening of the partition extending in the shape of _a. As the opening shape extending in the above-mentioned manner related to the opening 10A, for example, the ellipse shown in FIG. 6(a) and the rounded rectangle shown in FIG. 6(b) may be cited.

In the optical semiconductor device X1, the leads 20, 30 or their electrode portions 20a, 30a may have a bent shape on the side opposite to the opening 10A of the resin molded body 10 as shown in FIG. With this configuration, on the mounting substrate on which the optical semiconductor device X1 is mounted, the wiring pattern (including the electrode pad portion) of the mounting substrate makes it easy to solder the optical semiconductor device X1 to the electrode by welding, for example The electrical connection of the pad.

In the optical semiconductor device X1, as the optical semiconductor element E, an LED element having two electrode portions on one surface can be used. As a semiconductor material for constituting such an LED element, for example, InGaN can be cited. In the optical semiconductor device X1 provided with such an optical semiconductor element E, as shown in FIG. 8, the optical semiconductor element E bonded to the lead 20 in the opening 10A of the resin molded body 10 (the upper surface side in FIG. 8 has The two electrode portions (not shown) are electrically connected to the exposed surface 21 of the lead 20 via a bonding wire W, and at the same time electrically connected to the exposed surface 31 of the lead 30 via another bonding wire W.

9 to 11 show an optical semiconductor device X2 according to an embodiment of the present invention. 9 is a top view of the optical semiconductor device X2, FIG. 10 is a cross-sectional view of the optical semiconductor device X2 along the line X-X of FIG. 9, and FIG. 11 is a partially omitted cross-sectional view of the optical semiconductor device X2 along the line XI-XI of FIG.

The optical semiconductor device X2 includes an optical semiconductor element E, a resin molded body 10, leads 20 and 30 separated from each other, and a transparent resin portion 40. X2 optical semiconductor device having the leads 20 and 30 spaced along the direction of extension of the overall shape of _a D, which differ in the optical semiconductor device X1. In addition, the shape of the resin molded body 10 of the optical semiconductor device X2 is different from that of the optical semiconductor device X1.

The resin molded body 10 of the optical semiconductor device X2 is a resin body formed by partially accommodating the leads 20 and 30 inside. It has an inner wall surface 11 for light reflection and a partial bottom surface 12 for light reflection as a reflector opening. The opening 10B (part of the bottom surface 12 forms a part of the bottom surface of the opening 10B). The inner wall surface 11 of the opening 10B defines the opening shape of the opening 10B. In this embodiment, the opening shape is inclined in a manner that the opening shape expands from the bottom surface of the opening 10B to the opening end. In addition, the length L ₁ of the resin molded body 10 in the separation direction D ₁ of the leads 20 and 30 is, for example, 2.5 to 4 mm. The length of the resin molded body 10 in the direction orthogonal to the length L ₁ is, for example, 1.8 to 2.5 mm.

The opening 10B specifically has a wide area R1, a narrow area R2, and a width gradient area R3 defined by the inner wall surface 11, and the three areas are arranged along the separation direction of the leads 20 and 30. Opening shape. In the gradual width region R3, the inner wall surface 11 has an inner curved surface 11a.

Wide opening portion 10B of the partition region R1 extending in the direction D _1, and is located 20 (first lead) wire side of the opening section 10B. Further, the resin molded body 10 surrounding the wide view of a portion of the thickness T of the region R1 shown in FIG. 9 and ₁₁₁ of for example 0.1 ~ 0.4 mm.

The narrow region R2 of the opening portion 10B of the partition on the direction perpendicular to the direction D ₁ D ₂ (the width direction) is narrower than the wide region R1, and the lead 30 is located (second leads) of the side opening portion 10B. The thickness T ₂ shown in FIGS. 9 and 11 of the portion surrounding the wide region R2 in the resin molded body 10 is, for example, 0.2 to 0.8 mm, and preferably 1.1T ₁ to 5T ₁ . In addition, the length L _{2 of the} narrow region R2 is, for example, 0.4 to 1.4 mm, and preferably 0.1L ₁ to 0.5L ₁ .

The lead 20 (first lead) has an exposed surface 21 (first exposed surface) that faces the opening 10B of the resin molded body 10 and forms a part of the bottom surface of the opening 10B, and has an exposed surface that is exposed on the side opposite to the opening 10B Surface 22 (the second exposed surface). In the present embodiment, the exposed surface 21 faces a part of the wide area R1, the width gradient area R3, and the narrow area R2 of the opening 10B across. The optical semiconductor element E is mounted on the exposed surface 21 of the lead 20 via a conductive bonding material such as a soldering material or a conductive adhesive in the wide area R1 of the opening 10B, and is electrically and mechanically connected to the lead 20. In addition, the lead 20 has an electrode portion 20a extending from the resin molded body 10 to the outside. With this aspect, the lead 20 is partially covered and held by the resin molded body 10.

The lead 30 (second lead) has an exposed surface 31 (third exposed surface) that is located on a part of the bottom surface 12 of the opening 10B of the resin molded body 10 and faces the opening 10B. The exposed surface 31 (a part of the lead 30) on the part of the bottom surface 12 is in a direction D ₂ orthogonal to the separation direction D _{1 of the} leads 20 and 30, which is smaller than the exposed surface 21 (a part of the lead 20) on the part of the bottom surface 12 The edge 21a on the side of the lead 30 (shown as a thick line in FIG. 9). The optical semiconductor element E on the exposed surface 21 of the lead 20 is connected to the exposed surface 31 via a bonding wire W. In addition, the lead 30 has an electrode portion 30a extending from the resin molded body 10 to the outside. With this aspect, the lead 30 is partially covered and held by the resin molded body 10.

Regarding other aspects of the optical semiconductor element E, other aspects of the resin molded body 10, other aspects of the leads 20 and 30, and the transparent resin portion 40, the optical semiconductor device X2 and the optical semiconductor device X1 are described above Said the same.

When the optical semiconductor device X2 is driven, specific power is supplied to the optical semiconductor element E through the leads 20 and 30, whereby the optical semiconductor element E emits light. One part of the light emitted from the optical semiconductor element E is reflected in the opening 10B of the resin molded body 10, and the other part of the light emitted from the optical semiconductor element E is not reflected in the opening 10B, but passes through the transparent resin part 40. The opening 10B is projected outside.

With this optical semiconductor device X2, the same technical effects as those described above regarding the optical semiconductor device X1 can be exerted. That is, the optical semiconductor device X2, like the optical semiconductor device X1, is suitable for suppressing strains such as warpage and achieving high light utilization efficiency.

In addition, in the optical semiconductor device X2, as described above, the length L ₂ of the narrow region R2 of the resin molded body 10 is preferably 0.1L ₁ to 0.5L ₁ , and the thickness T ₂ of the resin molded body 10 is preferably It is 1.1T ₁ ～5T ₁ . Such a structure is within a specific size, is preferable in terms of ensuring the contact area between the resin molded body 10 and the leads 20, 30, and suppressing the deformation of the leads 20, 30, and therefore, in terms of suppressing the distortion such as warpage of the optical semiconductor device X2 Better.

Further, in the optical semiconductor device X2, as described above, the resin molded body into the opening portion 10 of the partition 10B has 20, 30 along the direction D comprises lead wide region R1, the width of the transition region R3, and the arrangement of the narrow region R2 ₁ The shape of the opening. In addition, in the gradual width region R3 of the opening 10B of the resin molded body 10, the inner wall surface 11 of the opening 10B has the inner curved surface 11a as described above. These configurations are better in terms of achieving higher light utilization efficiency. The reason is that during the light-emitting drive of the optical semiconductor device X2, a part of the light emitted from the optical semiconductor element E is effectively reflected by the inner curved surface 11a to the outside of the opening 10B, and the inner curved surface 11a helps to increase the opening The amount of reflected light outside 10B.

In the optical semiconductor device X2, the leads 20, 30 or their electrode portions 20a, 30a may have a bent shape on the side opposite to the opening 10B of the resin molded body 10, as shown in FIG. With this structure, it is present on the mounting substrate on which the optical semiconductor device X2 is mounted. The wiring pattern (including the electrode pad portion) of the mounting substrate makes it easy to connect the optical semiconductor device X2 to the electrode by welding, for example The electrical connection of the pads.

In the optical semiconductor device X2, as the optical semiconductor element E, an LED element having two electrode portions on one surface can be used. As a semiconductor material for constituting such an LED element, for example, InGaN can be cited. In the optical semiconductor device X2 equipped with such an optical semiconductor element E, as shown in FIG. 13, the optical semiconductor element E mounted on the lead 20 in the opening 10B of the resin molded body 10 (in the upper surface of FIG. 13 Two electrode portions (not shown) on the side are electrically connected to the exposed surface 21 of the lead 20 via a bonding wire W, and at the same time electrically connected to the exposed surface 31 of the lead 30 via another bonding wire W.

In summary, the constitution and changes of the present invention are described below. [1] An optical semiconductor device having Optical semiconductor components, The first lead and the second lead separated from each other, and Resin molded body integrated with the above-mentioned first and second leads, The resin molded body has an opening having an inner wall surface for light reflection and a partial bottom surface for light reflection that define the shape of the opening, The first lead has a first exposed surface facing the opening of the resin molded body to form a part of a bottom surface of the opening, and has a second exposed surface exposed on a side opposite to the opening, The second lead has a third exposed surface that is located on the bottom surface of the part of the opening of the resin molded body and faces the opening, and the third exposed surface is perpendicular to the separation direction of the first and second leads The end edge of the second lead side which is smaller than the above-mentioned first exposed surface in the direction, The optical semiconductor element is mounted on the first exposed surface of the first lead, and is connected to the third exposed surface of the second lead via a bonding wire. [2] The optical semiconductor device according to [1], wherein the inner wall surface of the opening portion is inclined such that the shape of the opening expands from the bottom surface of the opening portion to the opening end. [3] The optical semiconductor device according to [1] or [2], wherein the first lead has an electrode portion extending from the resin molded body to the outside. [4] The optical semiconductor device according to any one of [1] to [3], wherein the second lead has an electrode portion extending from the resin molded body to the outside. [5] The optical semiconductor device according to any one of [1] to [4], wherein the area of the third exposed surface is 30% or less, 25% or less, or 20% or less of the area of the first exposed surface. [6] The optical semiconductor device according to any one of [1] to [5], wherein the opening has a circular opening shape. [7] The optical semiconductor device according to any one of [1] to [5], wherein the opening portion has an opening shape extending in the separation direction of the first and second leads. [8] The optical semiconductor device described in [7], wherein the shape of the extended opening is an ellipse or a rectangle with rounded corners. [9] The optical semiconductor device according to [7] or [8], wherein the opening portion has an opening shape including a wide area, a narrow area, and a combination of the wide area and the narrow area defined by the inner wall surface. The width gradient area between the two is arranged along the separation direction of the first and second leads. [10] The optical semiconductor device according to [9], wherein the inner wall surface has an inner curved surface in the width gradient region of the opening of the resin molded body. [11] The optical semiconductor device according to any one of [1] to [10], wherein the first and second leads each have an electrode portion extending from the resin molded body to the outside. [12] The optical semiconductor device according to any one of [1] to [11], wherein the resin molded body contains a white pigment. [13] The optical semiconductor device according to [12], wherein the white pigment is at least one selected from the group consisting of titanium oxide, aluminum oxide, zinc oxide, magnesium oxide, antimony oxide, and zirconium oxide. [14] The optical semiconductor device as described in any one of [1] to [13], which contains an epoxy resin as the thermosetting resin. [Industrial availability]

Since the optical semiconductor device of the present invention has the above-mentioned configuration, it is suitable for suppressing distortion such as warpage and achieving high light utilization efficiency.

X1, X2: Optical semiconductor device E: Optical semiconductor components 10: Resin molded body 10A, 10B: opening 11: inner wall 11a: Inside curved surface 12: Part of the bottom R1: wide area R2: narrow area R3: Width gradient area 20: Lead (first lead) 30: Lead (2nd lead) 21: exposed surface (first exposed surface) 22: exposed surface (the second exposed surface) 31: exposed surface (the third exposed surface) 20a, 30a: electrode part 40: Transparent resin part W: Bonding wire

Fig. 1 is a perspective view of an optical semiconductor device according to an embodiment of the present invention. FIG. 2 is a top view of the optical semiconductor device shown in FIG. 1. FIG. 3 is a cross-sectional view taken along the line III-III in the optical semiconductor device shown in FIG. 2. 4 is a cross-sectional view taken along the line IV-IV in the optical semiconductor device shown in FIG. 2. Fig. 5 is a rear view of the optical semiconductor device shown in Fig. 1. Figure 6 shows the change in the shape of the opening of the reflector. FIG. 7 is a cross-sectional view of a modification of the optical semiconductor device shown in FIG. 1. FIG. FIG. 8 is a cross-sectional view of a modification of the optical semiconductor device shown in FIG. 1. FIG. Fig. 9 is a plan view of an optical semiconductor device according to an embodiment of the present invention. 10 is a cross-sectional view taken along the line X-X in the optical semiconductor device shown in FIG. 9. FIG. 11 is a partially omitted cross-sectional view taken along the line XI-XI in the optical semiconductor device shown in FIG. 9. FIG. 12 is a cross-sectional view of a modification of the optical semiconductor device shown in FIG. 9. FIG. 13 is a cross-sectional view of a modification of the optical semiconductor device shown in FIG. 9. Fig. 14 is a top view of a conventional optical semiconductor device. 15 is a cross-sectional view taken along the line XV-XV in the optical semiconductor device shown in FIG. 14. FIG. 16 is a rear view of the optical semiconductor device shown in FIG. 14.

10: Resin molded body

10A: Opening

11: inner wall

12: Part of the bottom

20: Lead (1st lead)

20a: End edge

21: exposed surface (first exposed surface)

21a: End edge

30: Lead (2nd lead)

30a: Electrode

E: Optical semiconductor components

W: Bonding wire

X1: Optical semiconductor device

Claims (7)

An optical semiconductor device having Optical semiconductor components, The first lead and the second lead separated from each other, and Resin molded body integrated with the above-mentioned first and second leads, The resin molded body has an opening having an inner wall surface for light reflection and a part of a bottom surface for light reflection that define the shape of the opening, The first lead has a first exposed surface facing the opening of the resin molded body to form a part of a bottom surface of the opening, and has a second exposed surface exposed on a side opposite to the opening, The second lead has a third exposed surface that is located on the bottom surface of the part of the opening of the resin molded body and faces the opening, and the third exposed surface is perpendicular to the separation direction of the first and second leads The end edge of the second lead side which is smaller than the above-mentioned first exposed surface in the direction, The optical semiconductor element is mounted on the first exposed surface of the first lead, and is connected to the third exposed surface of the second lead via a bonding wire. The optical semiconductor device according to claim 1, wherein The area of the third exposed surface is 30% or less of the area of the first exposed surface. The optical semiconductor device according to claim 1 or 2, wherein The opening has a circular opening shape. The optical semiconductor device according to claim 1 or 2, wherein The opening has an opening shape extending in the separation direction of the first and second leads. The optical semiconductor device according to claim 4, wherein: The opening has the following opening shape: including a wide area defined by the inner wall surface, a narrow area, and a gradual width area between the wide area and the narrow area, and those along the first and second leads Arrange in the direction of separation. The optical semiconductor device according to claim 5, wherein: In the width-graded region of the opening of the resin molded body, the inner wall surface has an inner curved surface. The optical semiconductor device according to any one of claims 1 to 6, wherein: The first and second leads each have an electrode portion extending from the resin molded body to the outside.

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