TW202035275A - Manufacturing method of micro-electromechanical system pump - Google Patents

Abstract

A manufacturing method of a micro-electromechanical system pump is disclosed and comprises following steps of providing a first substrate having a first surface and a second surface, forming a first oxide layer on the first substrate and forming an inlet opening, etching a converging channel and a converging chamber on the first oxide layer, providing a second substrate having a third surface and a fourth surface, etching a perforation on the third surface of the second substrate, etching a vibration chamber in the second substrate through the perforation of the second substrate, combining the second substrate to the first substrate, so as to attach the third surface of the second substrate to the first oxide layer, thinning the fourth surface of the second substrate to form a thinned surface corresponding to the third surface, and stacking a piezoelectric element on the thinned surface.

Description

Manufacturing method of microelectromechanical pump

This case is about a manufacturing method of MEMS pumps, especially a manufacturing method of manufacturing MEMS pumps through a semiconductor process.

At present, in various fields, whether it is medicine, computer technology, printing, energy and other industries, products are developing in the direction of refinement and miniaturization. Among them, products such as micro pumps, sprayers, inkjet heads, and industrial printing devices include The pump structure used to transport fluid is its key component. Therefore, how to break through the technical bottleneck with innovative structure is an important content of development.

With the rapid development of science and technology, the applications of fluid delivery devices have become more and more diversified. For example, industrial applications, biomedical applications, medical care, electronic heat dissipation, etc., and even the recently popular wearable devices can be seen in its shadow. Traditional pumps have gradually become smaller and larger flow rates.

However, although the current miniaturized pump is continuously improved to make it miniaturized, it still cannot break through the millimeter level and shrink the pump to the micron level. Therefore, how to reduce the pump to the micron level and complete it is the invention of the project. The main subject.

The main purpose of this case is to provide a method for manufacturing a micro-electro-mechanical pump, which is used to manufacture a micro-scale micro-electro-mechanical pump to reduce the volume limitation on the pump.

To achieve the above objective, the broader implementation aspect of this case is to provide a method for manufacturing a microelectromechanical pump, which includes the following steps: Step (S101) provides a first substrate, the first substrate having a first surface and a Second surface; step (S102) forming a first oxide layer on the first surface of the first substrate, and forming a plurality of inflow holes that are tapered from the second surface to the first surface; step (S103 ) Etching the first oxide layer to form a bus chamber and a plurality of bus channels, and the bus channels respectively correspond to the inflow holes of the first substrate; step (S104) provides a second substrate, The second substrate has a third surface and a fourth surface opposite to each other; step (S105) etching the third surface of the second substrate to form a through hole in the center; step (S106) passing the second surface The perforation of the substrate is etched to form a vibration chamber in the second substrate; step (S107) the second substrate is bonded to the first substrate, and the third surface of the second substrate is attached to the first oxide layer Combined; step (S108) and thin the fourth surface of the second substrate to form a thinned surface opposite to the third surface; and step (S109) stacking a piezoelectric component on the thinned surface .

The embodiments embodying the features and advantages of this case will be described in detail in the later description. It should be understood that this case can have various changes in different aspects, all of which do not depart from the scope of the case, and the descriptions and illustrations therein are essentially for illustrative purposes, rather than limiting the case.

The manufacturing method of the micro-electro-mechanical pump in this case. The micro-electro-mechanical pump 100 produced can be used in the fields of medicine and biotechnology, energy, computer technology, or printing to guide fluid and increase or control the flow rate of the fluid. . Please refer to Fig. 1A, Fig. 1B, Fig. 2A and Fig. 2B at the same time. Fig. 1A and Fig. 1B are the schematic diagrams of the manufacturing method of the MEMS pump 100 in this case, and Fig. 2A is the MEMS pump 100. Figure 2B is an exploded schematic diagram of the MEMS pump 100 manufactured by the manufacturing method of the MEMS pump 100 in this case. The MEMS pump 100 in this case is completed through the MEMS process and should not be decomposed. The structure is clearly explained, and the exploded diagram is used to explain; the manufacturing method of the microelectromechanical pump 100 in this case includes the following steps: step (S101) provides a first substrate 1, the first substrate 1 has a first surface 11 and a Second surface 12; step (S102) forming a first oxide layer 2 on the first surface 11 of the first substrate 1, and forming a plurality of inflow holes 13 that are tapered from the second surface 12 to the first surface 11; Step (S103) etching the first oxide layer 2 to form a bus chamber 21 and a plurality of bus channels 22, the bus channels 22 respectively corresponding to the inflow holes 13 of the first substrate 1; step (S104) A second substrate 3 is provided, and the second substrate 3 has a third surface 31 and a fourth surface 32; step (S105) etching the third surface 31 of the second substrate 3 to form a through hole 33 in the center thereof; Step (S106) etch through the perforation 33 of the second substrate 3 to form a vibration chamber 34 in the second substrate 3; step (S107) bond the second substrate 3 to the first substrate 1, and the second substrate The third surface 31 of 3 is attached to the first oxide layer 2; step (S108) thinning the fourth surface 32 of the second substrate 3 to form a thinning surface 35 opposite to the third surface 31; and step (S109) A piezoelectric element 4 is stacked on the thinned surface 35.

First, as shown in step (S101), the first substrate 1 is provided first, and the first substrate 1 is provided with a first surface 11 and a second surface 12 through methods such as grinding, etching, and cutting.

The step (S102) is continued to form a first oxide layer 2 on the first surface 11 of the first substrate 1, and then the second surface 12 is etched to form a tapered surface from the second surface 12 to the first surface 11. These inflow holes 13.

As shown in step (S103), the first oxide layer 2 is etched, and a confluence chamber 21 and the confluence channels 22 are formed in the first oxide layer 2. The confluence chamber 21 is located in the center of the first oxide layer 2. One ends of the confluence channels 22 respectively correspond to the inflow holes 13 of the first substrate 1 and communicate with the inflow holes 13 respectively, and the other ends of the confluence channels 22 are connected to the confluence chamber 21.

As shown in step (S104), a second substrate 3 is provided, and the second substrate 3 has a third surface 31 and a fourth surface 32; and as shown in step (S105), the third surface 31 of the second substrate 3 Etching is performed to form a through hole 33 in the center; in another step (S106), the through hole 33 of the second substrate 3 is used to etch the inside of the second substrate 3 again, for example, an etching solution is injected through the hole 33, and the etching solution is used to An etching process is performed in the second substrate 3 to form a vibration chamber 34 inside the second substrate 3, and the vibration chamber 34 communicates with the through hole 33.

Please refer to step (S107), the second substrate 3 is bonded to the first substrate 1, and the third surface 31 of the second substrate 3 is bonded to the first oxide layer 2. At this time, the perforation of the second substrate 3 will be The confluence chamber 21 of the first oxide layer 2 corresponds vertically; then in step (S108), the fourth surface 32 of the second substrate 3 is thinned, for example, the fourth surface 32 is ground to reduce the thickness of the second substrate 3 A thinning action is performed and a thinned surface 35 opposite to the third surface 31 is formed; in another step (S109), a piezoelectric element 4 is stacked on the thinned surface 35.

Finally, in step (S110), the thinned surface 35 of the second substrate 3 is etched to form a plurality of fluid channels 36, which communicate with the vibration chamber 34, and the MEMS pump 100 is completed.

Please refer to Figure 4, which is a schematic diagram of another embodiment of the manufacturing method of the MEMS pump in this case. The difference is that the step (S108) has a step (S108a) to etch the thinned surface 35 of the second substrate 3, The fluid channels 36 are formed, and the fluid channels 36 are connected to the vibration chamber 34 to complete the microelectromechanical pump 100.

In addition, please refer to FIGS. 5A and 5B. In step (S104), the second substrate 3 is prepared. The second substrate 3 in this case is a silicon-on-insulating silicon wafer (SOI wafer), including a silicon material layer 3A. A second oxide layer 3B, a silicon wafer layer 3C, the second oxide layer 3B is stacked on the silicon wafer layer 3C, and the silicon material layer 3A is stacked on the second oxide layer 3B, wherein the second substrate 3 The third surface 31 is the surface of the silicon material layer 3A, and the above step (S105) is to etch the third surface 31 of the second substrate 3, that is, the surface of the silicon material layer 3A (same as the third surface 31) is opposed to the silicon material Etching is performed, and a through hole 33 is formed in the silicon material layer 3A, and in step (S106), an etching is performed through the through hole 33 of the second substrate 3. That is, an etching solution that will etch the oxide layer but not the silicon material passes through the silicon material layer The through hole 33 of 3A etches the second oxide layer 3B between the silicon material layer 3A and the silicon wafer layer 3C, so that a vibration chamber 34 is formed on the second oxide layer 3B, and the step (S108) is to align the silicon wafer The layer 3C undergoes a thinning operation such as grinding to form a thinned surface 35, and finally, the thinned surface 35 of the second substrate 3 is etched in step (S108a) or step (S110), that is, the silicon wafer layer 3C is thinned The surface 35 is etched to form the fluid channels 36.

As stated above, please refer to Figures 3A and 3B at the same time. The periphery of the through hole 33 of the silicon material layer 3A and the vertical projection area corresponding to the vibration chamber 34 is the vibration part 31a, and the others correspond to the second oxide layer 3B. After the silicon wafer layer 3C passes through the etching fluid channel 36, the actuating part 31c, a plurality of connecting parts 32c and the outer peripheral part 33c will be defined. The actuating part 31c is surrounded by the fluid channel 36. Located on the periphery of the fluid passage 36 is the outer peripheral portion 33c, located between the fluid passages 36 and connected to the connecting portion 32c of the actuating portion 31c and the outer peripheral portion 33c.

Please refer to FIG. 3A and FIG. 6 at the same time. The aforementioned step (S109) includes the following steps: step (S109a) depositing a lower electrode layer 41; step (S109b) depositing a piezoelectric layer 42 on the lower electrode layer 41; step ( S109c) depositing an insulating layer 43 on a part of the piezoelectric layer 42 and a part of the lower electrode layer 41; step (S109d) depositing an upper electrode layer 44 on the insulating layer 43, a part of the upper electrode layer 44 and the piezoelectric layer 42 Electrical connection.

Continuing from the above, please refer to step (S109a) first, using sputtering, vapor deposition, or other physical or chemical vapor deposition on the third surface 31 of the second substrate 3 to deposit the lower electrode layer 41, and then step (S109b), The piezoelectric layer 42 is also deposited on the lower electrode layer 41 by evaporation or sputtering, and the two are electrically connected through the contact area. In addition, the width of the piezoelectric layer 42 is smaller than that of the lower electrode layer. The width of 41 makes it impossible for the piezoelectric layer 42 to completely shield the lower electrode layer 41; then proceed to step (S109c) to deposit an insulating layer on a part of the piezoelectric layer 42 and the area of the lower electrode layer 41 not covered by the piezoelectric layer 42 43; Finally, perform the step (S109d), deposit an upper electrode layer 44 on the piezoelectric layer 42 where the insulating layer 43 is not deposited and part of the insulating layer 43, so that the upper electrode layer 44 is electrically connected to the piezoelectric layer 42 In addition, the insulating layer 43 is blocked between the upper electrode layer 44 and the lower electrode layer 41 to avoid electrical connection between the two and causing a short circuit. Among them, the lower electrode layer 41 and the upper electrode layer 44 can be connected to each other through fine-pitch wire bonding packaging technology. Externally extending conductive pins (not shown) are used to receive external driving signals and driving voltages.

Please continue to refer to Figures 3A and 3B, the schematic cross-sectional view of the microelectromechanical pump 100 manufactured by the manufacturing method of this case. The microelectromechanical pump 100 consists of a first substrate 1 provided with a first oxide layer 2 and The SOI wafer second substrate 3 with a silicon material layer 3A, a second oxide layer 3B, and a silicon wafer layer 3C is combined in a stacked manner. In this embodiment, the number of inflow holes 13 on the first substrate 1 is four, but Without limitation, the four inflow holes 13 are all tapered cones. When combined with the second substrate 3, the first oxide layer 2 is connected to the second substrate 3, and the location of the bus channel 22 of the first oxide layer 2 The numbers and the numbers correspond to the inflow holes 13 of the first substrate 1. Therefore, in this embodiment, there are also 4 merging channels 22. One end of the 4 merging channels 22 is connected to the 4 inflow holes 13, and the 4 merging channels 22 The other end of the channel 22 is connected to the confluence chamber 21, allowing the gas to enter through the four inflow holes 13 respectively, and then pass through the corresponding confluence channel 22 and gather in the confluence chamber 21, and the through holes 33 of the second substrate 3 and The confluence chamber 21 communicates with gas, and the vibration chamber of the second oxide layer 3B communicates with the through hole 33 of the silicon material layer 3A and the fluid channel 36 of the second substrate 3, so that fluid can enter the vibration chamber through the through hole 33 After 34, it is discharged from the fluid channel 36.

Please refer to Figure 3A and Figures 7A to 7C. Figures 7A to 7C are schematic diagrams of the operation of the MEMS pump manufactured by the manufacturing method of this case; please refer to Figure 7A first, when the piezoelectric component The lower electrode layer 41 and the upper electrode layer 44 of 4 receive the driving voltage and driving signal (not shown) transmitted from the outside, and then conduct them to the piezoelectric layer 42. The piezoelectric layer 42 receives the driving voltage and driving signal because of The influence of the piezoelectric effect begins to produce deformation. The amount and frequency of the deformation are controlled by the driving voltage and driving signal. When the piezoelectric layer 42 starts to be deformed by the driving voltage and driving signal, it will drive the silicon of the second substrate 3 The actuating portion 31c of the wafer layer 3C starts to move. When the piezoelectric component 4 drives the actuating portion 31c to move upward to open the distance between the second oxide layer 3B and the second oxide layer 3B, the vibration chamber 34 of the second oxide layer 3B The volume will increase, so that negative pressure is formed in the vibration chamber 34, which is used to suck the gas in the confluence chamber 21 of the first oxide layer 2 into it; please continue to refer to Figure 7B, when the actuation portion 31c is subjected to the piezoelectric element 4 When the traction is displaced upward, the vibrating portion 31a of the silicon material layer 3A in the second substrate 3 will be displaced upward due to the principle of resonance. When the vibrating portion 31a is displaced upward, the space of the vibration chamber 34 will be compressed and the vibration chamber 34 will be pushed. The fluid inside moves to the second fluid channel 36, allowing the fluid to be discharged upward through the fluid channel 36. While the vibrating part 31a is displaced upward to compress the vibrating chamber 34, the volume of the confluence chamber 21 is increased due to the displacement of the vibrating part 31a, so that Negative pressure is formed inside, and the fluid outside the MEMS pump 100 is sucked into it through the inflow hole 13. Finally, as shown in Fig. 7C, the piezoelectric element 4 drives the actuating portion 31c of the silicon wafer layer 3C in the second substrate 3 When moving downward, the gas in the vibrating chamber 34 is pushed into the fluid channel 36 and discharged outward, and the vibrating portion 31a of the second substrate 3 is also driven by the actuating portion 31c to move downward, and the confluence chamber 21 is compressed synchronously. The gas moves to the vibration chamber 34 through the perforation 33, and then when the piezoelectric component 4 drives the actuation part 31c to move upward, the volume of the vibration chamber 34 will be greatly increased, and the gas will be sucked into vibration by a higher suction force. The chamber 34 repeats the above actions, so that the piezoelectric element 4 continuously drives the actuating portion 31c to move up and down and to link the vibrating portion 31a to move up and down, so as to change the internal pressure of the microelectromechanical pump 100 and make it continuously draw , Exhaust gas to complete the pumping action.

In summary, this case provides a manufacturing method of micro-electro-mechanical pump, which mainly uses semiconductor manufacturing process to complete the structure of micro-electro-mechanical pump to further reduce the volume of the pump, making it lighter, thinner and shorter, reaching the nanometer level. , To reduce the problem that the pump volume is too large in the past and cannot reach the limit of micron size, which is of great industrial use value, and the application is filed in accordance with the law.

This case can be modified in many ways by those who are familiar with this technology, but it is not deviated from the protection of the patent application.

100: MEMS pump 1: First substrate 11: First surface 12: Second surface 13: Inflow hole 2: First oxide layer 21: Confluence chamber 22: Confluence channel 3: Second substrate 31: Third surface 32: Fourth surface 33: Perforation 34: Vibration chamber 35: Thinned surface 36: Fluid channel 3A: Silicon material layer 31a: Vibration part 32a: Fixed part 3B: Second oxide layer 3C: Silicon wafer layer 31c: Actuation Section 32c: connecting section 33c: outer peripheral section 4: piezoelectric component 41: lower electrode layer 42: piezoelectric layer 43: insulating layer 44: upper electrode layer S101~S109: manufacturing method steps of microelectromechanical pumping

Figures 1A and 1B are schematic diagrams of the manufacturing method of the MEMS pump in this case. Figures 2A and 2B are schematic cross-sectional views of the manufacturing method of the microelectromechanical pump in this case. Figure 3A is a schematic cross-sectional view of the MEMS pump. Figure 3B is an exploded schematic diagram of the MEMS pump. Figure 4 is a schematic flow diagram of another manufacturing method of the microelectromechanical pump of the present application. Figures 5A and 5B are schematic cross-sectional views of the second substrate of the microelectromechanical pump of the present application. Figure 6 is the manufacturing flow chart of the MEMS-pumped piezoelectric component. Figures 7A to 7C are schematic diagrams of the action of the MEMS pump.

100: MEMS pump

1: first substrate

11: First surface

12: second surface

13: Inflow hole

2: The first oxide layer

21: Confluence chamber

22: Confluence channel

3: The second substrate

31: third surface

32: fourth surface

33: Piercing

34: Vibration chamber

35: Thinning the surface

36: fluid channel

4: Piezoelectric components

Claims (10)

A manufacturing method of microelectromechanical pumping includes the following steps: step (S101) provides a first substrate having a first surface and a second surface opposite to each other; step (S102) is on the first substrate A first oxide layer is formed on the first surface, and a plurality of inflow holes that are tapered from the second surface to the first surface are formed; step (S103) etching the first oxide layer to form a confluence A chamber and a plurality of bus channels, the bus channels respectively corresponding to the inflow holes of the first substrate; step (S104) providing a second substrate, the second substrate having a third surface and a fourth Surface; step (S105) etching the third surface of the second substrate to form a perforation in the center; step (S106) etching through the perforation of the second substrate to form in the second substrate A vibration chamber; step (S107) bonding the second substrate to the first substrate, and bonding the third surface of the second substrate to the first oxide layer; step (S108) and bonding the second substrate The fourth surface is thinned to form a thinned surface opposite to the third surface; and the step (S109) is to stack a piezoelectric component on the thinned surface. For example, in the manufacturing method of the microelectromechanical pump described in the first item of the patent application, the step (S109) includes the following steps: step (S109a) depositing a lower electrode layer; step (S109b) depositing a piezoelectric layer on the lower electrode layer Layer; step (S109c) depositing an insulating layer on a part of the piezoelectric layer and a part of the bottom electrode; and step (S109d) depositing an insulating layer on a region of the piezoelectric layer where the insulating layer is not deposited and a part of the insulating layer The electrode layer, a part of the upper electrode layer is electrically connected to the piezoelectric layer. As shown in the first item of the scope of patent application, the manufacturing method of the microelectromechanical pump, wherein the second substrate is thinned through a grinding process. The manufacturing method of the microelectromechanical pump described in the first item of the scope of patent application, wherein the first substrate is a silicon wafer. According to the manufacturing method of the microelectromechanical pump described in item 4 of the scope of patent application, the second substrate is a silicon-on-insulating silicon wafer (SOI wafer). For the manufacturing method of microelectromechanical pump described in item 5 of the scope of patent application, the silicon wafer covered with silicon on the insulating layer includes a silicon material layer, a second oxide layer, and a silicon wafer layer, and the second oxide layer is arranged On the silicon wafer layer, the silicon material is laminated on the second oxide layer, the third surface of the second substrate is a surface of the silicon material layer, and the step (S105) is to etch the silicon material layer To form the through hole, the step (S106) is to etch the second oxide layer through the through hole to form the vibration chamber, and the step (S108) is to thin the silicon wafer layer of the second substrate to form The thinned surface. The manufacturing method of the microelectromechanical pump described in item 6 of the scope of patent application includes the following steps: step (S110) etching the thinned surface of the silicon wafer layer to form a plurality of fluid channels in the silicon wafer layer, The fluid channels communicate with the vibration chamber. The manufacturing method of the microelectromechanical pump described in the scope of patent application, wherein the step (S108) includes the step (S108a) of etching the thinned surface of the silicon wafer layer to form a plurality of Fluid channels, the fluid channels communicate with the vibration chamber. The manufacturing method of the microelectromechanical pump described in the first item of the scope of patent application includes the following steps: step (S110) etching the thinned surface of the second substrate to form a plurality of fluid channels, the fluid channels Connected with the vibration chamber. The method for manufacturing a microelectromechanical pump as described in the scope of the patent application, wherein the step (S108) includes the step (S108a) of etching the thinned surface of the second substrate to form a plurality of fluid channels, the The fluid channels communicate with the vibration chamber.

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