TW202023692A - Substrate treatment method and substrate treatment apparatus - Google Patents
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- G01F1/7086—Measuring the time taken to traverse a fixed distance using optical detecting arrangements
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
Description
本發明係有關於一種處理基板之技術,尤其有關於一種以處理液處理基板之技術。成為處理對象的基板係包括例如半導體基板、液晶顯示裝置以及有機EL(Electroluminescence;電致發光)顯示裝置等FPD(Flat Panel Display;平面顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板、印刷基板等。The present invention relates to a technology for processing a substrate, and more particularly to a technology for processing a substrate with a processing liquid. The substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, and organic EL (Electroluminescence; electroluminescence) display devices, such as FPD (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical devices. Substrates for discs, substrates for photomasks, ceramic substrates, substrates for solar cells, printed substrates, etc.
在半導體製造中,會有在先前進行以預定的液體處理半導體基板的表面之第一處理後對半導體基板進行另外的第二處理之情形。例如,於專利文獻1記載有:以疏水化劑處理表面具有細微的圖案(pattern)的半導體基板,藉此抑制細微的圖案崩壞。更詳細而言,在先前以液體的PGMEA(propylene glycol monomethyl ether acetate;丙二醇甲醚醋酸酯)處理半導體基板後,以疏水化劑處理半導體基板。In semiconductor manufacturing, there may be cases where another second treatment is performed on the semiconductor substrate after the first treatment for treating the surface of the semiconductor substrate with a predetermined liquid. For example,
此外,於專利文獻2揭示有一種技術,係在藉由高速旋轉使基板乾燥時抑制阻劑圖案(resist pattern)的崩壞。具體而言,對形成有阻劑圖案的基板先進行供給清洗(rinse)液之液體處理作為第一處理後,進行使基板高速旋轉並使基板乾燥之乾燥處理作為第二處理。於專利文獻2中記載有:在結束供給清洗液後,因應基板主表面的乾燥區域從基板中心朝外周的擴展來控制基板的旋轉速度,且進一步地計測干涉紋(interference fringe)的變化並進行乾燥區域的邊界的位置檢測。 [先前技術文獻] [專利文獻]In addition, Patent Document 2 discloses a technique of suppressing the collapse of the resist pattern when the substrate is dried by high-speed rotation. Specifically, the substrate on which the resist pattern is formed is first subjected to a liquid treatment of supplying a rinse liquid as the first treatment, and then a drying treatment of rotating the substrate at a high speed and drying the substrate is performed as the second treatment. Patent Document 2 describes that after the supply of the cleaning solution is completed, the rotation speed of the substrate is controlled in response to the expansion of the dry area on the main surface of the substrate from the center of the substrate to the outer periphery, and the change in interference fringe is further measured and performed. Detection of the position of the boundary of the dry area. [Prior Technical Literature] [Patent Literature]
專利文獻1:日本特開2010-114414號公報。 專利文獻2:日本特開2004-335542號公報。Patent Document 1: Japanese Patent Application Laid-Open No. 2010-114414. Patent Document 2: JP 2004-335542 A.
[發明所欲解決之課題][The problem to be solved by the invention]
一般而言,在第一處理中供給至基板的第一處理液的液膜的厚度係有可能會對後續的第二處理造成影響。例如,在專利文獻1之情形中,在第一處理中對基板供給PGMEA,並在停止供給PGMEA後對基板進行屬於第二處理的疏水化劑的供給。此時,在基板的PGMEA的液膜過厚之情形中,對於置換成疏水化劑的效率低。然而,在專利文獻1中完全未揭示有以最適當的時序進行疏水化劑的供給之技術。Generally speaking, the thickness of the liquid film of the first processing liquid supplied to the substrate in the first processing may affect the subsequent second processing. For example, in the case of
此外,在專利文獻2中僅記載有計測干涉紋的變化並進行開始第二處理的乾燥處理之控制,完全未揭示有檢測干涉紋之技術。因此,依據引用文獻2,難以適當地決定開始乾燥處理之時序。In addition, Patent Document 2 only describes the control of measuring the change in interference fringes and performing the drying process that starts the second process, and does not disclose a technique for detecting interference fringes at all. Therefore, according to the cited document 2, it is difficult to appropriately determine the timing of starting the drying process.
因此,本發明的目的在於提供一種技術,係在屬於液體處理的第一處理後適當地決定開始後續的第二處理之時序。 [用以解決課題的手段]Therefore, the object of the present invention is to provide a technique for appropriately determining the timing of starting the subsequent second treatment after the first treatment belonging to the liquid treatment. [Means to solve the problem]
為了解決上述課題,第一態樣的基板處理方法係用以以處理液處理以水平姿勢旋轉中的基板的上表面,並包含有:工序(a),係以水平姿勢保持基板;工序(b),係使藉由前述工序(a)中被保持成水平姿勢的前述基板繞著鉛直方向的旋轉軸線旋轉;工序(c),係對藉由前述工序(b)而旋轉的前述基板的上表面供給第一處理液;工序(d),係在前述工序(c)之後,停止供給前述第一處理液;工序(e),係在前述工序(d)之後,使殘留於前述基板的上表面的前述第一處理液的膜變薄;工序(f),係在前述工序(e)中以照相機拍攝前述基板的上表面;工序(g),係因應藉由前述工序(f)所取得的拍攝影像所設定的判定區域內之與前述旋轉軸線正交的徑方向中的光強度成為極大或者極小之極值點,決定對前述基板進行第二處理之時序;以及工序(h),係因應藉由前述工序(g)所決定的時序對前述基板進行前述第二處理。In order to solve the above-mentioned problems, the substrate processing method of the first aspect is used to process the upper surface of the substrate rotating in a horizontal position with a processing liquid, and includes: step (a), holding the substrate in a horizontal position; step (b) ), is to rotate the substrate held in a horizontal posture in the aforementioned step (a) about the vertical axis of rotation; step (c) is to rotate the substrate on the aforementioned step (b) The first treatment liquid is supplied to the surface; step (d) is to stop the supply of the first treatment liquid after the aforementioned step (c); step (e) is to leave the residue on the substrate after the aforementioned step (d) The film of the first treatment liquid on the surface becomes thin; step (f) is to photograph the upper surface of the substrate with a camera in the step (e); step (g) is obtained by the step (f) The light intensity in the radial direction orthogonal to the axis of rotation in the determination area set in the captured image becomes the extreme point of maximum or minimum, and the timing of the second processing of the substrate is determined; and step (h), is The second processing is performed on the substrate in accordance with the timing determined by the step (g).
第二態樣的基板處理方法係如第一態樣所記載之基板處理方法,其中在前述工序(h)中,在前述基板的上表面整體殘留有前述第一處理液的膜之期間開始前述第二處理。The substrate processing method of the second aspect is the substrate processing method described in the first aspect, wherein in the step (h), the first processing liquid film remains on the entire upper surface of the substrate. The second treatment.
第三態樣的基板處理方法係如第一態樣或第二態樣所記載之基板處理方法,其中前述判定區域係被設定於前述拍攝影像中的前述基板的前述上表面。The substrate processing method of the third aspect is the substrate processing method described in the first aspect or the second aspect, wherein the determination area is set on the upper surface of the substrate in the captured image.
第四態樣的基板處理方法係如第三態樣所記載之基板處理方法,其中前述工序(g)係包含有:工序(g1),係因應在前述判定區域內檢測到一個極值點後直至檢測到下一個極值點為止的時間來決定前述時序。The fourth aspect of the substrate processing method is the substrate processing method described in the third aspect, wherein the aforementioned step (g) includes: step (g1), which corresponds to the detection of an extreme point in the aforementioned determination area The time until the next extreme point is detected determines the aforementioned timing.
第五態樣的基板處理方法係如第四態樣所記載之基板處理方法,其中前述工序(g)係包含有:工序(g2),係依據在前述判定區域內從檢測到第一極值點後直至檢測到第二極值點為止的第一時間以及從檢測到前述第二極值點後直至檢測到第三極值點為止的第二時間來決定前述時序。The substrate processing method of the fifth aspect is the substrate processing method described in the fourth aspect, wherein the aforementioned step (g) includes: step (g2), based on the detection of the first extreme value in the aforementioned determination area The first time after the second extreme point is detected until the second extreme value point is detected, and the second time after the detection of the second extreme value point until the third extreme point is detected to determine the timing sequence.
第六態樣的基板處理方法係如第一態樣至第三態樣中任一態樣所記載之基板處理方法,其中前述工序(g)係包含有:工序(g3),係依據在前述判定區域中所檢測到的第一極值點與從前述第一極值點朝徑方向外側離開的第二極值點之間的第一距離來決定前述時序。The substrate processing method of the sixth aspect is the substrate processing method described in any one of the first aspect to the third aspect, wherein the aforementioned step (g) includes: step (g3), based on the aforementioned The first distance between the first extreme point detected in the determination area and the second extreme point away from the first extreme point in the radial direction is determined to determine the aforementioned timing.
第七態樣的基板處理方法係如第一態樣至第三態樣中任一態樣所記載之基板處理方法,其中前述判定區域係包含有:第一判定區域;以及第二判定區域,係從前述第一判定區域朝徑方向外側離開;前述工序(g)係包含有:工序(g4),係依據在前述第一判定區域中檢測到第一極值點以及在前述第二判定區域中檢測到第二極值點來決定前述時序。The substrate processing method of the seventh aspect is the substrate processing method described in any one of the first aspect to the third aspect, wherein the aforementioned determination area includes: a first determination area; and a second determination area, It is separated from the first judgment area toward the outside in the radial direction; the step (g) includes: step (g4), based on the detection of the first extreme point in the first judgment area and the detection of the second judgment area The second extreme point is detected in the middle to determine the aforementioned timing.
第八態樣的基板處理方法係如第七態樣所記載之基板處理方法,其中進一步包含有:工序(i),係在前述工序(g)之前,變更前述第二判定區域相對於前述第一判定區域之徑方向中的相對性的位置。The substrate processing method of the eighth aspect is the substrate processing method described in the seventh aspect, which further includes: step (i), before the step (g), changing the second determination region relative to the first A position to determine the relative position in the radial direction of the region.
第九態樣的基板處理方法係如第六態樣所記載之基板處理方法,其中前述工序(g)係包含有:工序(g5),係依據前述第一距離以及在前述判定區域內的前述第二極值點與從前述第二極值點朝徑方向外側離開的第三極值點之間的第二距離來決定前述時序。The substrate processing method of the ninth aspect is the substrate processing method described in the sixth aspect, wherein the aforementioned step (g) includes: step (g5), which is based on the aforementioned first distance and the aforementioned determination area The second distance between the second extreme point and the third extreme point away from the second extreme point in the radial direction determines the aforementioned timing.
第十態樣的基板處理方法係如第一態樣至第九態樣中任一態樣所記載之基板處理方法,其中前述工序(g)係包含有:工序(g6),係在前述判定區域中檢測複數個極值點中之從最後可檢測到的最終極值點起數來的三個前述極值點,藉此決定前述時序。The substrate processing method of the tenth aspect is the substrate processing method described in any one of the first aspect to the ninth aspect, wherein the aforementioned step (g) includes: step (g6), which is in the aforementioned judgment The three aforementioned extreme value points counted from the last detectable final extreme value point among the plurality of extreme value points are detected in the area, thereby determining the aforementioned timing sequence.
第十一態樣的基板處理方法係如第一態樣至第十態樣中任一態樣所記載之基板處理方法,其中前述照相機係紅外線照相機。The substrate processing method of the eleventh aspect is the substrate processing method described in any one of the first aspect to the tenth aspect, wherein the aforementioned camera is an infrared camera.
第十二態樣的基板處理方法係如第十一態樣所記載之基板處理方法,其中前述工序(f)係包含有:工序(f1),係對前述基板的上表面照射紅外線。The substrate processing method of the twelfth aspect is the substrate processing method described in the eleventh aspect, wherein the step (f) includes: a step (f1) of irradiating the upper surface of the substrate with infrared rays.
第十三態樣的基板處理方法係如第一態樣至第十二態樣中任一態樣所記載之基板處理方法,其中前述第二處理係用以對前述基板的上表面供給與前述第一處理液不同的第二處理液之處理。The substrate processing method of the thirteenth aspect is the substrate processing method described in any one of the first aspect to the twelfth aspect, wherein the second processing is used to supply the upper surface of the substrate with the Treatment of a second treatment liquid with a different first treatment liquid.
第十四態樣的基板處理方法係如第一態樣至第十二態樣中任一項所記載之基板處理方法,其中前述第二處理係用以將基板的旋轉速度設定成比前述工序(e)時還大並去除殘留於前述基板的上表面的前述第一處理液之處理。The substrate processing method of the fourteenth aspect is the substrate processing method described in any one of the first aspect to the twelfth aspect, wherein the aforementioned second processing is used to set the rotation speed of the substrate to be higher than the aforementioned process (e) When it is large and removes the first treatment liquid remaining on the upper surface of the substrate.
第十五態樣的基板處理裝置係用以對以水平姿勢旋轉中的基板的上表面進行液體處理,並具備有:基板保持部,係以水平姿勢保持基板;旋轉部,係使被前述基板保持部保持的基板之對象基板繞著鉛直方向的旋轉軸線旋轉;處理液供給部,係對前述對象基板的上表面供給第一處理液;照相機,係拍攝前述對象基板的上表面;時序決定部,係在藉由前述照相機所取得的拍攝影像所設定的判定區域內,因應與前述旋轉軸線正交的徑方向中的光強度成為極大值或者極小值之極值點朝向徑方向外側之移動來決定對前述對象基板進行第二處理之時序;以及第二處理執行部,係因應藉由前述時序決定部所決定的前述時序對前述對象基板進行前述第二處理。The substrate processing apparatus of the fifteenth aspect is used for liquid processing on the upper surface of a substrate rotating in a horizontal posture, and is provided with a substrate holding part holding the substrate in a horizontal posture; a rotating part holding the substrate in a horizontal posture; The target substrate of the substrate held by the holding part rotates around a vertical axis of rotation; the processing liquid supply part supplies the first processing liquid to the upper surface of the target substrate; the camera photographs the upper surface of the target substrate; the timing determining part , In the determination area set by the captured image obtained by the aforementioned camera, according to the movement of the extreme point at which the light intensity in the radial direction orthogonal to the aforementioned axis of rotation becomes the maximum or minimum value toward the outside of the radial direction Determining the timing of performing the second processing on the target substrate; and the second processing execution unit performs the second processing on the target substrate in accordance with the timing determined by the timing determining unit.
第十六態樣的基板處理裝置係如第十五態樣所記載之基板處理裝置,其中前述判定區域係被設定於前述拍攝影像中的前述對象基板的前述上表面。The substrate processing apparatus of the sixteenth aspect is the substrate processing apparatus described in the fifteenth aspect, wherein the determination area is set on the upper surface of the target substrate in the captured image.
第十七態樣的基板處理裝置係如第十五態樣或第十六態樣所記載之基板處理裝置,其中前述時序決定部係包含有:特徵向量抽出部,係從前述拍攝影像抽出複數種類的特徵向量;以及影像判定部,係依據前述複數種類的特徵向量判定前述拍攝影像是否為成為前述時序的決定的基準之影像。 [發明功效]The substrate processing apparatus of the seventeenth aspect is the substrate processing apparatus described in the fifteenth aspect or the sixteenth aspect, wherein the timing determining unit includes: a feature vector extracting unit that extracts plural numbers from the captured images Type feature vector; and an image determination unit that determines whether the captured image is an image that becomes a reference for the timing decision based on the plurality of types of feature vectors. [Invention Effect]
依據第一態樣的基板處理方法,當停止供給第一處理液時,藉由基板的旋轉甩離第一處理液,藉此液膜的厚度逐漸變薄。此時,因應液膜的厚度產生朝徑方向外側移動的干涉紋。該干涉紋係與採取光強度的極值之極值點對應。因此,依據光強度的極值點決定進行第二處理之時序,藉此能以第一處理液的液膜成為最佳的厚度之時序開始第二處理。According to the substrate processing method of the first aspect, when the supply of the first processing liquid is stopped, the first processing liquid is spun off by the rotation of the substrate, whereby the thickness of the liquid film gradually becomes thinner. At this time, interference fringes moving outward in the radial direction are generated in accordance with the thickness of the liquid film. This interference pattern corresponds to the extreme point that takes the extreme value of the light intensity. Therefore, the time sequence for performing the second treatment is determined according to the extreme point of the light intensity, whereby the second treatment can be started at the time sequence when the liquid film of the first treatment liquid becomes the optimal thickness.
依據第二態樣的基板處理方法,在第一處理液殘留於基板的上表面整體之狀態下開始第二處理。因此,能抑制局部性地進行基板的乾燥。According to the substrate processing method of the second aspect, the second processing is started with the first processing liquid remaining on the entire upper surface of the substrate. Therefore, it is possible to suppress the drying of the substrate locally.
依據第三態樣的基板處理方法,於拍攝影像中的基板的上表面設定有判定區域。藉此,能提升與基板的上表面所發生的干涉紋對應之極值點的檢測精度。According to the substrate processing method of the third aspect, a determination area is set on the upper surface of the substrate in the captured image. Thereby, the detection accuracy of the extreme points corresponding to the interference fringes generated on the upper surface of the substrate can be improved.
依據第四態樣的基板處理方法,能從兩個極值點通過判定區域之時間差檢測薄膜化的進行程度。因此,決定第二處理的開始時序。According to the substrate processing method of the fourth aspect, the progress of thinning can be detected from the time difference between the two extreme points passing through the determination area. Therefore, the start timing of the second process is determined.
依據第五態樣的基板處理方法,算出第一時間與第二時間,藉此能判定是否已出現檢測對象的干涉紋。According to the substrate processing method of the fifth aspect, the first time and the second time are calculated, whereby it can be determined whether the interference pattern of the inspection object has appeared.
依據第六態樣的基板處理方法,算出第一距離,藉此能判定是否已出現檢測對象的干涉紋。According to the substrate processing method of the sixth aspect, the first distance is calculated, whereby it can be determined whether the interference pattern of the inspection object has appeared.
依據第七態樣的基板處理方法,設定於徑方向離開達至適當的距離之第一判定區域以及第二判定區域並在第一判定區域以及第二判定區域內進行干涉紋的檢測,藉此能判定是否已出現檢查對象的干涉紋。According to the substrate processing method of the seventh aspect, the first judging area and the second judging area that are separated by an appropriate distance in the radial direction are set, and the interference pattern is detected in the first judging area and the second judging area, thereby Can determine whether the interference pattern of the inspection object has appeared.
依據第八態樣的基板處理方法,能將第二判定區域相對於第一判定區域之相對性的位置變更成徑方向。藉此,例如能在第一判定區域以及第二判定區域各者同時地檢測成為第二處理的時序決定的指標之第一極值點以及第二極值點。According to the substrate processing method of the eighth aspect, the relative position of the second determination area with respect to the first determination area can be changed to the radial direction. With this, it is possible to simultaneously detect the first extreme value point and the second extreme value point as an index determined by the timing of the second process in each of the first determination area and the second determination area, for example.
依據第九態樣的基板處理方法,取得第一距離以及第二距離,藉此能判定是否已出現檢測對象的干涉紋。According to the substrate processing method of the ninth aspect, the first distance and the second distance are obtained, whereby it can be determined whether the interference pattern of the inspection object has appeared.
依據第十態樣的基板處理方法,能在第一處理液的液膜的厚度成為無法檢測干涉紋的薄度之前的階段決定進行第二處理之時序。According to the substrate processing method of the tenth aspect, the timing of the second processing can be determined at a stage before the thickness of the liquid film of the first processing liquid becomes the thinness of the interference pattern that cannot be detected.
依據第十一態樣的基板處理方法,能藉由檢測紅外線而適當地檢測與干涉紋對應的光強度。According to the substrate processing method of the eleventh aspect, the light intensity corresponding to the interference pattern can be appropriately detected by detecting infrared rays.
依據第十二態樣的基板處理方法,能藉由檢測紅外線而適當地檢測與干涉紋對應的光強度。According to the substrate processing method of the twelfth aspect, the light intensity corresponding to the interference pattern can be appropriately detected by detecting infrared rays.
依據第十三態樣的基板處理方法,能在第一處理液成為目標的薄度之時間點供給第二處理液。因此,由於能迅速地進行從第一處理液置換成第二處理液,因此能降低第二處理液的使用量。According to the substrate processing method of the thirteenth aspect, the second processing liquid can be supplied at the time when the first processing liquid becomes the target thinness. Therefore, since the replacement from the first processing liquid to the second processing liquid can be performed quickly, the usage amount of the second processing liquid can be reduced.
依據第十四態樣的基板處理方法,在第一處理液成為目標的薄度之時間點增大基板的旋轉速度。能抑制因為大量殘留的第一處理液導致基板的處理成為不均勻。According to the substrate processing method of the fourteenth aspect, the rotation speed of the substrate is increased at the point in time when the first processing liquid becomes the target thinness. It is possible to prevent the substrate processing from becoming uneven due to the large amount of remaining first processing liquid.
依據第十五態樣的基板處理裝置,當停止供給第一處理液時,藉由基板的旋轉甩離第一處理液,藉此液膜的厚度逐漸地變薄。此時,因應液膜的厚度發生朝徑方向外側移動的干涉紋。該干涉紋係與採取光強度的極值之極值點對應。因此,依據光強度的極值點決定進行第二處理之時序,藉此能以第一處理液的液膜成為最適當的厚度之時序開始第二處理。According to the substrate processing apparatus of the fifteenth aspect, when the supply of the first processing liquid is stopped, the first processing liquid is thrown away by the rotation of the substrate, whereby the thickness of the liquid film gradually becomes thinner. At this time, interference fringes that move radially outward are generated in accordance with the thickness of the liquid film. This interference pattern corresponds to the extreme point that takes the extreme value of the light intensity. Therefore, the timing of performing the second treatment is determined according to the extreme point of the light intensity, whereby the second treatment can be started at the timing when the liquid film of the first treatment liquid becomes the most appropriate thickness.
依據第十六態樣的基板處理裝置,能檢測出現於基板上的干涉紋。According to the substrate processing apparatus of the sixteenth aspect, interference patterns appearing on the substrate can be detected.
以下,一邊參照隨附的圖式一邊說明本發明的實施形態。此外,實施形態所記載的構成要素僅為例示,本發明的範圍並未限定於這些實施形態。在圖式中,為了容易理解,會有因應需要將各部位的尺寸以及數量誇張化或者簡略化地圖示之情形。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the constituent elements described in the embodiments are merely examples, and the scope of the present invention is not limited to these embodiments. In the drawings, for ease of understanding, the size and number of each part may be exaggerated or simplified as needed.
只要未特別說明,用以顯示相對性或者絕對性的位置關係之表現(例如「於一方向」、「沿著一方向」、「平行」、「正交」、「中心」、「同心」、「同軸」等)係不僅嚴密地表示位置關係,亦表示在公差或者能獲得相同程度的功能之範圍內相對性地針對角度或者距離而變位的狀態。只要未特別說明,用以顯示相等狀態之表現(例如「同一」、「相等」、「均質」等)係不僅嚴密地表示與定量性相等的狀態,亦表示存在公差或者能獲得相同程度的功能之誤差的狀態。只要未特別說明,用以表示形狀之表現(例如「四角形」或者「圓筒形狀」等)係不僅嚴密地表示幾何學性的形狀,亦表示在能獲得相同程度的功效之範圍內具有例如凹凸以及倒角等之形狀。「具備有」、「具有」、「具備」、「包含有」或者「含有」一個構成要素此種表現並非是將其他構成要素排除之排他性的表現。只要未特別說明,所謂「在~上」係除了兩個要素接觸之情形,亦包含有兩個要素分離之情形。Unless otherwise specified, it is used to show the performance of relative or absolute positional relationship (such as "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "Coaxial" etc.) not only strictly express the positional relationship, but also express the state of relative displacement with respect to the angle or distance within the range of tolerance or the same degree of function can be obtained. Unless otherwise specified, the performance (such as "identical", "equal", "homogeneous", etc.) used to show the state of equality not only strictly indicates the state of equality with quantification, but also indicates that there is tolerance or the same degree of function The status of the error. Unless otherwise specified, the expressions used to express the shape (such as "quadrigonal" or "cylindrical shape", etc.) not only strictly express geometrical shapes, but also express such as unevenness within the range where the same degree of efficacy can be obtained. And shapes such as chamfers. The expression of "has," "has," "has," "includes," or "contains" a component is not an exclusive expression of excluding other components. As long as there is no special explanation, the so-called "at ~ on" refers to the situation where two elements are in contact, but also includes the situation where two elements are separated.
(1)第一實施形態
圖1係顯示第一實施形態的基板處理裝置100的整體構成之圖。基板處理裝置100係葉片式的處理裝置,用以逐片地處理屬於處理對象的基板(亦稱為對象基板)W。基板處理裝置100係使用藥液以及純水等清洗液對圓形薄板狀的矽基板之基板W進行洗淨處理後,再進行乾燥處理。作為藥液,能使用例如SC1(standard clean-1;第一標準清洗液,亦即氨水過氧化氫混和液(ammonia-hydrogen peroxide mixture))、SC2(standard clean-2;第二標準清洗液,亦即鹽酸過氧化氫混合液(hydrochloric hydrogen peroxide mixed water solution))、DHF(dilute hydrofluoric acid;稀釋氫氟酸)等。在以下的說明中,會有將藥液與清洗液總稱為「處理液」之情形。此外,基板處理裝置100亦可構成為並非是進行洗淨處理,而是供給成膜處理用的光阻(photoresist)液等塗布液、用以去除不需要的膜之藥液、或者蝕刻用的藥液,並對基板進行濕式處理。亦即,基板處理裝置100只要為例如用以對以水平姿勢旋轉中的基板W的上表面進行液體處理之裝置即可。液體處理係使用了針對基板W的處理液之處理。(1) The first embodiment
FIG. 1 is a diagram showing the overall configuration of a
基板處理裝置100係具備有複數個洗淨處理單元1、索引器(indexer)102以及主搬運機器人103。The
索引器102係將從裝置(基板處理裝置100)外接取的處理對象的基板W搬運至裝置(基板處理裝置100)內,並將已完成洗淨處理之處理完畢的基板W搬出至裝置(基板處理裝置100)外。索引器102係載置複數個承載器(carrier)(未圖示),並具備有移送機器人(未圖示)。作為承載器,亦可採用用以將基板W收納至密閉空間之FOUP(Front Opening Unified Pod;前開式晶圓傳送盒)或者SMIF(Standard Mechanical Inter Face;標準製造介面)盒(pod),或者亦可採用用以將基板W暴露於外氣之OC(Open Cassette;開放式晶圓匣)。移送機器人係在承載器與主搬運機器人103之間移送基板W。The
洗淨處理單元1係針對一片基板W進行液體處理以及乾燥處理。於基板處理裝置100配置有十二個洗淨處理單元1。具體而言,以圍繞主搬運機器人103的周圍之方式配置有四個塔(tower),四個塔係分別包含有於鉛直方向積層的三個洗淨處理單元1。在圖1中概略地顯示重疊成三層的洗淨處理單元1中的一個洗淨處理單元1。此外,基板處理裝置100中的洗淨處理單元1的數量並未限定於十二個,亦可適當地變更。The
主搬運機器人103係配置於積層有洗淨處理單元1之四個塔的中央。主搬運機器人103係將從索引器102接取的處理對象的基板W搬入至各個洗淨處理單元1。此外,主搬運機器人103係從各個洗淨處理單元1將處理完畢的基板W搬出並傳遞至索引器102。The
(洗淨處理單元1)
以下,雖然針對搭載於基板處理裝置100的十二個洗淨處理單元1中的一個洗淨處理單元1進行說明,但其他的洗淨處理單元1除了噴嘴30、60、65的配置關係不同之外,具有相同的構成。(Washing treatment unit 1)
In the following, although one of the twelve
圖2係第一實施形態的洗淨處理單元1的概略俯視圖。圖3係第一實施形態的洗淨處理單元1的概略縱剖視圖。圖2係顯示基板W未被自轉夾具(spin chuck)20保持的狀態,圖3係顯示基板W被自轉夾具20保持的狀態。Fig. 2 is a schematic plan view of the
洗淨處理單元1係於腔室(chamber)10內具備有:自轉夾具20,係以水平姿勢(基板W的表面的法線沿著鉛直方向的姿勢)保持基板W;三個噴嘴(亦稱為處理液供給部)30、60、65,係用以對被自轉夾具20保持的基板W的上表面供給處理液;處理罩(processing cup)40,係圍繞自轉夾具20的周圍;以及照相機70,係拍攝自轉夾具20的上方空間。此外,於腔室10內的處理罩40的周圍設置有用以將腔室10的內側空間上下地區隔之區隔板15。The
腔室10係具備有:側壁11,係沿著鉛直方向,並圍繞四個方向;頂壁12,係封閉側壁11的上側;以及底壁13,係封閉側壁11的下側。被側壁11、頂壁12以及底壁13圍繞的空間係成為基板W的處理空間。此外,於腔室10的側壁11的一部分設置有:搬出搬入口(未圖示),係用以使主搬運機器人103將基板W搬入至腔室10內以及將基板W從腔室10內搬出;擋門(shutter)(未圖示),係用以將搬出搬入口予以開閉。The
於腔室10的頂壁12安裝有FFU(fan filter unit;風扇過濾器單元)14,該FFU14係用以將設置有基板處理裝置100的無塵室(cleaning room)內的空氣進一步地清淨化並供給至腔室10內的處理空間。FFU14係具備有風扇以及過濾器(例如HEPA(High Efficiency Particulate Air;高效率粒子空氣)過濾器),該風扇係用以將無塵室內的空氣取入並輸送至腔室10內。FFU14係於腔室10內的處理空間形成清淨空氣的降流(down flow)。為了將從FFU14供給的清淨空氣均勻地分散,亦可將穿設有多個吹出孔的衝孔板(punching plate)設置於頂壁12的正下方。A FFU (fan filter unit; fan filter unit) 14 is installed on the
自轉夾具20係具備有自轉基座(spin base)21、自轉馬達(spin motor)22、蓋(cover)構件23以及旋轉軸24。自轉基座21係具有圓板形狀,以水平姿勢固定於沿著鉛直方向延伸的旋轉軸24的上端。自轉馬達22係設置於自轉基座21的下方,並使旋轉軸24旋轉。自轉馬達22係經由旋轉軸24使自轉基座21於水平面內旋轉。蓋構件23係具有筒狀,並圍繞自轉馬達22以及旋轉軸24的周圍。The
圓板形狀的自轉基座21的外徑係比被自轉夾具20保持的圓形的基板W的直徑稍大。自轉基座21係具有保持面21a,該保持面21a係與應保持的基板W的下表面的整面對向。The outer diameter of the disk-shaped
於自轉基座21的保持面21a的周緣部立設有複數個(在本實施形態中為四個)夾具銷(chuck pin)26。各個夾具銷26係隔著均等地間隔配置於沿著與圓形的基板W的外周緣的外形對應之圓周上。在本實施形態中,四個夾具銷26係以90°間隔設置。各個夾具銷26係藉由收容於自轉基座21內的未圖示的連桿機構而被連動地驅動。自轉夾具20係使各個夾具銷26分別抵接於基板W的外周端並把持基板W,藉此在自轉基座21的上方以接近保持面21a的水平姿勢保持該基板W(參照圖3)。此外,自轉夾具20係使各個夾具銷26分別從基板W的外周端離開,藉此解除對於基板W的把持。各個夾具銷26係基板保持部,用以以水平姿勢保持基板W。A plurality of (four in this embodiment) chuck pins 26 are erected on the peripheral edge of the holding
用以覆蓋自轉馬達22之蓋構件23的下端係被固定於腔室10的底壁13,蓋構件23的上端係到達至自轉基座21的正下方。於蓋構件23的上端部設置有鍔狀構件25,該鍔狀構件25係從蓋構件23朝外側大致水平地伸出且朝下方彎曲延伸。在自轉夾具20藉由複數個夾具銷26所為之把持已保持基板W的狀態下,作為旋轉部的自轉馬達22係使旋轉軸24旋轉,藉此能使基板W繞著沿著通過基板W的中心的鉛直方向的旋轉軸線CX旋轉。此外,自轉馬達22的驅動係被控制部9控制。在以下的說明中,將與旋轉軸線CX正交的水平方向稱為「徑方向」。此外,將徑方向中朝向旋轉軸線CX的方向稱為「徑方向內側」,將徑方向中從旋轉軸線CX離開的方向稱為「徑方向外側」。The lower end of the
噴嘴30係構成為將噴出頭31安裝於噴嘴臂32的前端。噴嘴臂32的基端側係固定並連結於噴嘴基台33。噴嘴基台33係構成為藉由設置於噴嘴基台33的馬達332(噴嘴移動部,參照圖4)而可繞著沿著鉛直方向的軸轉動。The
如圖2中的箭頭AR34所示,噴嘴基台33轉動,藉此噴嘴30係在自轉夾具20的上方的位置與比處理罩40還外側的待機位置之間沿著水平方向圓弧狀地移動。藉由噴嘴基台33的轉動,噴嘴30係在自轉基座21的保持面21a的上方搖動。詳細而言,在比自轉基座21還上方中朝於水平方向延伸的既定的處理位置TP1移動。此外,使噴嘴30移動至處理位置TP1係表示使噴嘴30的前端部的噴出頭31移動至處理位置TP1。As shown by the arrow AR34 in FIG. 2, the
噴嘴30係構成為被供給有複數種處理液(至少包含有純水),並可從噴出頭31噴出複數種處理液。此外,亦可於噴嘴30的前端設置複數個噴出頭31,並分別從複數個噴出頭31個別地噴出相同或者不同的處理液。噴嘴30(詳細而言為噴出頭31)係在處理位置TP1停止並噴出處理液。從噴嘴30噴出的處理液係著液至被自轉夾具20保持的基板W的上表面。The
於本實施形態的洗淨處理單元1除了設置有上述噴嘴30之外還設置有兩個噴嘴60、65。本實施形態的噴嘴60、65係具備有與上述噴嘴30相同或者類似的構成。亦即,噴嘴60係構成為將噴出頭安裝於噴嘴臂62的前端,並藉由連結於噴嘴臂62的基端側的噴嘴基台63而如箭頭AR64所示般在自轉夾具20的上方的處理位置與比處理罩40還外側的待機位置之間圓弧狀地移動。噴嘴65係構成為將噴出頭安裝於噴嘴臂67的前端,並藉由連結於噴嘴臂67的基端側的噴嘴基台68而如箭頭AR69所示般在自轉夾具20的上方的處理位置與比處理罩40還外側的待機位置之間圓弧狀地移動。In addition to the
噴嘴60、65亦構成為被供給至少包含有純水之複數種處理液,且噴嘴60、65亦在處理位置中朝被自轉夾具20保持的基板W的上表面噴出處理液。此外,噴嘴60、65的至少一者亦可為雙流體噴嘴,用以混合純水等洗淨液與經過加壓的氣體並生成液滴且將該液滴與氣體的混合流體噴射至基板W。此外,設置於洗淨處理單元1的噴嘴數量並未限定於三個,只要為一個以上即可。The
並不一定需要使噴嘴30、60、65各者圓弧狀地移動。例如,亦可藉由設置直線移動驅動部而使噴嘴直線移動。It is not necessary to move each of the
噴嘴30係連接於作為清洗液的純水(亦即DIW(deionized water;去離子水))、IPA(Isopropyl Alcohol;異丙醇)、矽烷基(silyl)化劑等撥水化劑、DHF(稀釋氫氟酸,亦即氫氟酸與純水的混合液)等各種處理液的供給源,且能從噴嘴30的前端的噴出頭31分別地噴出各種處理液。此外,亦可於噴嘴30的前端設置複數個噴出頭31,且各個噴出頭31係噴出不同種類的處理液。此外,噴嘴60、65亦可噴出上述各種處理液中的一部分。The
以插通旋轉軸24的內側之方式沿著鉛直方向設置有下表面處理液噴嘴28。下表面處理液噴嘴28的上端開口係形成於與被自轉夾具20保持的基板W的下表面中央對向之位置。下表面處理液噴嘴28亦構成為被供給有複數種處理液。從下表面處理液噴嘴28噴出的處理液係著液至被自轉夾具20保持的基板W的下表面。A lower surface
圍繞自轉夾具20之處理罩40係具備有彼此獨立且可升降之內罩41、中罩42以及外罩43。內罩41係圍繞自轉夾具20的周圍,且具有相對於通過被自轉夾具20保持的基板W的中心之旋轉軸線CX成為大致旋轉對稱的形狀。內罩41係一體性地具有:底部44,係俯視觀看時為圓環狀;圓筒狀的內壁部45,係從底部44的內周緣朝上方立起;圓筒狀的外壁部46,係從底部44的外周緣朝上方立起;第一導引部47,係從內壁部45與外壁部46之間立起,且上端部形成圓滑的圓弧並朝中心側(接近被自轉夾具20保持的基板W的旋轉軸線CX的方向)斜上方延伸;以及圓筒狀的中壁部48,係從第一導引部47與外壁部46之間朝上方立起。The
內壁部45係在內罩41已上升至最上方的狀態下以保留適當的間隙之方式收容於蓋構件23與鍔狀構件25之間。中壁部48係在內罩41與中罩42最接近的狀態下以保留適當的間隙之方式收容於中罩42的後述的第二導引部52與處理液分離壁53之間。The
第一導引部47係具有上端部47b,該上端部47b係形成為圓滑的圓弧且朝中心側(接近基板W的旋轉軸線CX的方向)斜上方延伸。此外,內壁部45與第一導引部47之間係作為用以將使用完畢的處理液予以收集並廢棄之廢棄槽49。第一導引部47與中壁部48之間係作為用以將使用完畢的處理液予以收集並回收之圓環狀的內側回收槽50。再者,中壁部48與外壁部46之間係作為用以將與內側回收槽50不同種類的處理液予以收集並回收之圓環狀的外側回收槽51。The
於廢棄槽49連接有未圖示的排氣排液機構,該排氣排液機構係用以將廢棄槽49所收集的處理液予以排出且將廢棄槽49的內部強制性地排氣。排氣排液機構係例如沿著廢棄槽49的周方向等間隔地設置有四個。此外,於內側回收槽50以及外側回收槽51設置有回收機構(未圖示),該回收機構係用以將內側回收槽50以及外側回收槽51分別收集的處理液回收至設置於基板處理裝置100的外部的回收筒槽(未圖示)。此外,內側回收槽50以及外側回收槽51的底部係相對於水平方向些微角度地傾斜,且於內側回收槽50以及外側回收槽51的最低位置連接有回收機構。藉此,順暢地回收流入至內側回收槽50以及外側回收槽51的處理液。Connected to the
中罩42係圍繞自轉夾具20的周圍,且具有相對於通過被自轉夾具20保持的基板W的中心之旋轉軸線CX成為大致旋轉對稱的形狀。中罩42係具有第二導引部52以及圓筒狀的處理液分離壁53,處理液分離壁53係連結於第二導引部52。The
第二導引部52係在內罩41的第一導引部47的外側中具有:下端部52a,係作成與第一導引部47的下端部同軸的圓筒狀;上端部52b,係從下端部52a的上端形成為圓滑的圓弧,且朝中心側(接近基板W的旋轉軸線CX的方向)斜上方延伸;以及折返部52c,係將上端部52b的前端部朝下方折返而形成。下端部52a係在內罩41與中罩42最接近的狀態下以於第一導引部47與中壁部48之間保留適當的間隙之方式收容於內側回收槽50內。此外,上端部52b係以於上下方向與內罩41的第一導引部47的上端部47b重疊之方式設置,並以內罩41與中罩42最接近的狀態下以保留有非常微小的間隔之方式接近第一導引部47的上端部47b。折返部52c亦在內罩41與中罩42最接近的狀態下於水平方向與第一導引部47的上端部47b的前端重疊。The
第二導引部52的上端部52b係以愈朝向下方則厚度愈厚之方式形成。處理液分離壁53係具有以從上端部52b的下端外周緣部朝下方延伸之方式所設置的圓筒形狀。處理液分離壁53係在內罩41與中罩42最接近的狀態下以於中壁部48與外罩43之間保留適當的間隙之方式收容於外側回收槽51內。The
外罩43係具有相對於通過被自轉夾具20保持的基板W的中心之旋轉軸線CX成為大致旋轉對稱的形狀。外罩43係在中罩42的第二導引部52的外側中圍繞自轉夾具20。外罩43係具有作為第三導引部的功能。外罩43係具有:下端部43a,係作成與第二導引部52的下端部52a同軸的圓筒狀;上端部43b,係從下端部43a的上端形成為圓滑的圓弧且朝中心側(接近基板W的旋轉軸線CX的方向)斜上方延伸;以及折返部43c,係將上端部43b的前端部朝下方折返而形成。The
下端部43a係在內罩41與外罩43最接近的狀態下以於中罩42的處理液分離壁53與內罩41的外壁部46之間保留適當的間隙之方式收容於外側回收槽51內。上端部43b係以於上下方向與中罩42的第二導引部52重疊之方式設置,並以中罩42與外罩43最接近的狀態下以保留有非常微小的間隔之方式接近第二導引部52的上端部52b。折返部43c亦在中罩42與外罩43最接近的狀態下於水平方向與第二導引部52的折返部52c重疊。The
內罩41、中罩42以及外罩43係構成為彼此獨立且可升降。亦即,於內罩41、中罩42以及外罩43各者個別地設置有升降機構(未圖示),藉此內罩41、中罩42以及外罩43係各自獨立地升降。作為此種升降機構,能採用滾珠螺桿(ball screw)機構或者氣缸(air cylinder)等公知的各種機構。The
區隔板15係以將腔室10的內側空間上下地區隔之方式設置於處理罩40的周圍。區隔板15係可為圍繞處理罩40之一片板狀構件,亦可組合複數個板狀構件。此外,亦可於區隔板15形成有於厚度方向貫通的貫通孔以及/或者切口,在本實施形態中形成有用以使支撐軸穿通的貫通孔,該支撐軸係用以支撐噴嘴30、60、65的噴嘴基台33、63、68。The
區隔板15的外周端係連結於腔室10的側壁11。此外,區隔板15中之用以圍繞處理罩40之端緣部係以成為比外罩43的外徑還大的直徑的圓形狀之方式形成。因此,區隔板15不會阻礙外罩43的升降。The outer peripheral end of the
此外,於屬於腔室10的側壁11的一部分且為底壁13的附近設置有排氣導管18。排氣導管18係連通地連接於未圖示的排氣機構。從FFU14供給並於腔室10內流下的清淨空氣中之已通過處理罩40與區隔板15之間的空氣係從排氣導管18排出至裝置外。In addition, an
圖4係顯示照相機70與屬於可動部的噴嘴30之間的位置關係之圖。照相機70係在鉛直方向中設置於比基板W還鉛直方向上側。照相機70係例如具備有屬於固態拍攝元件的一種之CCD(Charge Coupled Device;電荷耦合元件)、電子快門以及透鏡等光學系統。為了拍攝基板W的上表面,照相機70的拍攝方向(亦即拍攝光學系統的光軸方向)係設定成朝基板W的上表面的旋轉中心(或者附近)傾斜地向下。照相機70係將被自轉夾具20保持的基板W的上表面整體涵蓋於照相機70的視野。例如,在水平方向中,圖2中以虛線所圍繞的範圍係被涵蓋於照相機70的視野。換言之,圖2的兩條虛線係顯示照相機70的視野的外緣。FIG. 4 is a diagram showing the positional relationship between the
照相機70係以至少處理位置TP1中的噴嘴30的前端被涵蓋於照相機70的拍攝視野之方式設置於涵蓋有噴出頭31的附近之位置。在本實施形態中,如圖4所示,照相機70係設置於從前方上方拍攝處理位置TP1中的噴嘴30之位置。因此,照相機70係能拍攝處理位置TP1中之包含有噴嘴30的前端之拍攝區域。同樣地,照相機70係拍攝包含有位於對被自轉夾具20保持的基板W進行處理時的處理位置之噴嘴60、65的各者的前端之拍攝區域。在照相機70配置於圖2以及圖4所示的位置之情形中,由於噴嘴30、60係在照相機70的拍攝視野內朝橫方向移動,因此能適當地拍攝各個處理位置的各個噴嘴30、60的前端;但是由於噴嘴65在照相機70的視野內朝深入方向移動,因此亦會有無法適當地拍攝處理位置附近的移動之虞。在此情形中,亦可另外設置與照相機70不同之用以拍攝噴嘴65的照相機。The
噴嘴30係藉由噴嘴基台33的驅動於被自轉夾具20保持的基板W的上方的處理位置TP1(圖4中以虛線所示的位置)與比處理罩40還外側的待機位置(圖4的實線位置)之間往復移動。處理位置TP1係噴嘴30對自轉夾具20保持的基板W的上表面噴出處理液並進行洗淨處理之位置。處理位置TP1係接近被自轉夾具20保持的基板W的中心(旋轉軸CX)之位置。待機位置係未進行洗淨處理時噴嘴30停止噴出處理液並待機之位置。待機位置係從自轉基座21的上方離開之位置,且為在水平面內的處理罩40的外側之位置。亦可於待機位置設置有用以收容噴嘴30的噴出頭31之待機盒。The
此外,處理位置TP1亦可為靠近基板W的緣部的位置等之任意的位置,且處理位置TP1亦可為從基板W離開的位置(亦即未於鉛直方向與基板W重疊的狀態的位置)。在後者之情形中,亦可使從噴嘴30噴出的處理液從基板W的外側飛散至基板W的上表面。此外,並不一定需要在已使噴嘴30停止於處理位置TP1的狀態下從噴嘴30噴出處理液。例如,亦可一邊從噴嘴30噴出處理液一邊使噴嘴30在既定的處理區間內移動,該既定的處理區間係將處理位置TP1作為一方端且在基板W的上方中朝水平方向延伸。In addition, the processing position TP1 may be any position close to the edge of the substrate W, and the processing position TP1 may be a position away from the substrate W (that is, a position that does not overlap the substrate W in the vertical direction). ). In the latter case, the processing liquid ejected from the
如圖3所示,在腔室10內且為比區隔板15還上方的位置設置有照明部71。照明部71係包含有例如LED(Light Emitting Diode;發光二極體)燈作為光源。照明部71係將照相機70拍攝腔室10內所需的照明光供給至處理空間。在腔室10內為暗室之情形中,控制部9係以照相機70進行拍攝時照明部71對噴嘴30、60、65照射光線之方式控制照明部71。照明部71係將可視光作為照明光照射。然而,照明光並未限定於可視光。作為照明光,例如能採用波長大致為從0.7µm(微米)至1mm(毫米)的紅外線,更佳為能採用例如波長大致為從0.7µm至2.5µm的近紅外線。在此情形中,作為照相機70,能採用具備有用以檢測紅外線(更佳為近紅外線)的紅外線感測器之紅外線照相機。藉由檢測紅外線,能適當地進行干涉紋的檢測。As shown in FIG. 3, an illuminating
圖5係照相機70以及控制部9的方塊圖。作為設置於基板處理裝置100的控制部9的硬體之構成係與一般的電腦相同。亦即,控制部9係具備有下述構件等:CPU(Central Processing Unit;中央處理器),係進行各種運算處理;ROM(Read Only Memory;唯讀記憶體),係用以儲存基本程式之讀出專用的記憶體;RAM(Random Access Memory;隨機存取記憶體),係用以儲存各種資訊之讀寫自如的記憶體;以及磁碟,係用以預先儲存控制用軟體(程式)以及資料等。藉由控制部9的CPU執行預定的處理程式,藉由控制部9控制基板處理裝置100的各個要素的動作並進行基板處理裝置100中的處理。FIG. 5 is a block diagram of the
圖5所示的判定區域設定部91以及時序決定部92係藉由控制部9的CPU依循控制用軟體而動作所實現之功能。The determination
判定區域設定部91係於照相機70所取得的拍攝影像82上設定判定區域DR。判定區域DR的大小、位置以及數量等係可預先設定,亦可依據作業者(operator)的指定來設定。The determination
時序決定部92係檢測在以液體處理基板W之先前的處理(第一處理)後出現於基板W的上表面的干涉紋ST,藉此決定開始後續的處理(第二處理)之時間(以下亦稱為「第二處理開始時序」)。第一處理係用以對旋轉中的基板W的上表面供給第一處理液之處理。如後述般,時序決定部92係在設定於拍攝影像82的判定區域DR內檢測各個干涉紋ST。此外,如後述般,判定區域DR中的干涉紋ST的檢測係藉由時序決定部92所具備的極值點檢測部921檢測亮度值的極值點而進行。The
控制部9係具備有記憶部96,該記憶部96係包含有上述RAM或者磁碟。記憶部96係記憶照相機70所獲得的影像資料以及作業者的輸入值等。The
於控制部9連接有顯示部97以及輸入部98。顯示部97係因應來自控制部9的影像訊號顯示各種資訊。輸入部98係由連接於控制部9的鍵盤以及滑鼠等輸入裝置所構成,並接受作業者對控制部9所進行的輸入操作。The
(動作說明)
圖6係顯示基板處理裝置100的一個洗淨處理單元1中的基板處理的流程的一例之圖。在以下所說明的各個工序中,只要未特別說明則是在控制部9的控制下進行。(Action description)
6 is a diagram showing an example of a flow of substrate processing in one
首先,在噴嘴30位於退避位置的狀態下,主搬運機器人103係將從索引器102接取的處理對象的基板W搬入至某一個洗淨處理單元1的腔室10內(步驟S10)。被搬入至腔室10內的基板係被載置於自轉基座21的各個夾具銷26。接著,各個夾具銷26閉鎖,藉此以水平姿勢保持基板W。當基板W被搬入時,藉由自轉馬達22開始旋轉基板W。First, with the
接著,噴嘴30係移動至處理位置TP1並將各種處理液供給至基板W,藉此對基板W進行液體處理。在此,首先,執行氫氟酸處理(步驟S11),該氫氟酸處理係從噴嘴30對基板W的上表面供給氫氟酸。被供給至基板W的上表面之氫氟酸係藉由基板W的旋轉朝而朝基板W的外緣部擴展,並在基板W的整體進行氫氟酸處理。將氫氟酸供給至基板W的期間係例如為30秒。該期間中的基板W的旋轉速度係例如為800rpm(revolution per minute;每分鐘轉速,亦即旋轉數/分)。Next, the
停止從噴嘴30噴出氫氟酸後,執行清洗液處理(步驟S12),該清洗液處理係從噴嘴30對基板W的上表面供給清洗液(在此為DIW)。於清洗液處理時,從噴嘴30對旋轉中的基板W的上表面連續性地供給清洗液。被供給至基板W的上表面的清洗液係藉由基板W的旋轉而朝基板W的外緣部擴展。接著,與殘存於基板W的上表面的氫氟酸一起從基板W的外緣部朝徑方向外側甩離。從基板W甩離的氫氟酸以及清洗液係被處理罩40接住並被適當地廢棄。將清洗液供給至基板W的期間係例如為30秒。此外,該期間中的基板W的旋轉速度係例如為1200rpm。After stopping the ejection of hydrofluoric acid from the
停止從噴嘴30噴出清洗液後,執行IPA處理(步驟S13),該IPA處理係從噴嘴30對基板W的上表面供給IPA。於IPA處理時,在IPA處理中從噴嘴30對旋轉中的基板W的上表面連續性地供給IPA。被供給至上表面的IPA係藉由基板W的旋轉而朝基板W的外緣部擴展,並在上表面(基板W的上表面)整體中將清洗液(亦即DIW)置換成IPA。此外,亦可以促進將DIW置換成IPA為目的而藉由未圖示的加熱機構對基板W進行加熱處理。供給IPA的期間係例如為30秒。此外,該期間中的基板W的旋轉速度係例如為300rpm。After stopping the spraying of the cleaning liquid from the
停止從噴嘴30噴出IPA後,執行撥水化處理(步驟S14),該撥水化處理係從噴嘴30對基板W的上表面供給撥水化劑。此時,被供給至基板W的上表面的撥水化劑係藉由基板W的旋轉而朝基板W的外緣部擴展,並在上表面(基板W的上表面)整體中將IPA置換成撥水化劑,且進行用以將上表面(基板W的上表面)改質成撥水性之撥水化處理。供給撥水化劑的期間係例如為30秒。此外,該期間中的基板W的旋轉速度係例如為500rpm。After stopping the ejection of the IPA from the
停止從噴嘴30噴出撥水化劑後,進行與步驟S13相同的IPA處理(步驟S15)。藉由該IPA處理,將殘存於基板W的上表面的撥水化劑置換成IPA處理液。After stopping spraying of the water-repellent agent from the
停止從噴嘴30噴出IPA後,噴嘴30係從處理位置TP1朝退避位置移動。接著,執行旋乾(spin drying)處理(步驟S16)。在旋乾處理中,自轉馬達22係以比步驟S11至步驟S15的各個液體處理時還大的旋轉速度使基板W旋轉。此時的旋轉速度係例如為1500rpm。藉由旋乾處理,附著於基板W的各種液體係從外周部(基板W的外周部)朝徑方向外側飛散,被處理罩40的內壁接住並被適當地廢棄。換言之,在旋乾處理中,將基板W的旋轉速度設定成比IPA處理時還大,去除殘留於基板W的上表面之作為處理液的IPA。After stopping the ejection of IPA from the
當結束旋乾處理時,解除各個夾具銷26對於基板W的保持,主搬運機器人103係將基板W從腔室10搬出(步驟S17)。When the spin-drying process is finished, the holding of the substrate W by each
如此,洗淨處理單元1所為之處理係包含有:液體處理工序(步驟S11至步驟S15),係對基板W進行液體處理;以及乾燥處理工序(步驟S16),係進行用以使基板W乾燥之乾燥處理。In this way, the processing performed by the
在上述說明中,雖然已經說明全部的液體處理是由噴嘴30所噴出,但是一部分的處理液亦可從噴嘴60、65噴出。在此情形中,亦可以適當的時序使噴嘴60、65從退避位置移動至處理位置,並從各個噴嘴60、65對基板W的上表面噴出各種處理液。In the above description, although it has been described that all the liquid processing is ejected from the
(針對第二處理開始時序的決定處理)
在基板處理裝置100中,在結束使用了液體的液體處理(第一處理)後,在開始下一個處理(第二處理)前,時序決定部92係決定開始下一個處理之時序。例如,時序決定部92係在步驟S13的IPA處理(第一處理)中停止從噴嘴30噴出IPA後,決定下一個處理的撥水化處理(第二處理)中開始從噴嘴30噴出撥水化劑之第二處理開始時序。如上所述,時序決定部92係因應干涉紋ST的檢測來決定執行下一個處理之時序。在此,說明於基板W的上表面出現的干涉紋ST。(Determination process for the start sequence of the second process)
In the
圖7係顯示從第一處理移行至第二處理的期間各個時序的拍攝影像82a、82b、82c、82d之圖。拍攝影像82a係顯示在第一處理中從噴嘴30對基板W的上表面供給處理液的狀態。當從噴嘴30等對旋轉中的基板W的上表面供給處理液時,處理液係於基板W的上表面朝徑方向外側移動,並從基板W的外緣部朝徑方向外側落下或者甩離。此時,由於供給至基板W的處理液的量與藉由基板W的旋轉而被甩離至外側的量取得平衡,因此於基板W的上表面形成有屬於處理液的膜之液膜W1。FIG. 7 is a diagram showing captured
拍攝影像82b係顯示停止從噴嘴30供給處理液後經過預定的時間時的基板W的上表面的狀態。當在形成有液膜W1的狀態下停止供給處理液時,基板W的表面的處理液係朝徑方向外側飛散,藉此液膜W1(殘留於基板W的上表面的第一處理液的膜)係逐漸地變薄。在膜厚變小的過程中,在基板W的上表面所反射的光線與在液膜W1的表面所反射的光線會干擾。如此,這兩個光線的相位一致的部分係作為明亮的帶區域而顯現,這兩個光線相位相反的部分係作為昏暗的帶區域而顯現。如拍攝影像82b所示,明亮的帶區域與昏暗的帶區域係於徑方向(基板W的徑方向)交互地顯現,藉此觀察到明暗的紋模樣。在此,將一個昏暗的帶區域作為干涉紋ST。然而,亦可將明亮的帶區域作為干涉紋。The captured
藉由基板W旋轉,中央部的處理液係朝外緣部移動。因此,在液膜W1變薄的過程中,各個干涉紋ST係在基板W上呈現圓環帶狀(圈狀),且一邊朝向徑方向外側擴展一邊移動。此外,干涉紋ST並未限定於呈現完全的圓環狀。As the substrate W rotates, the processing liquid system in the center part moves toward the outer edge part. Therefore, in the process of thinning of the liquid film W1, the respective interference fringes ST exhibit an annular band shape (loop shape) on the substrate W, and move while spreading outward in the radial direction. In addition, the interference pattern ST is not limited to a complete circular ring shape.
拍攝影像82c係顯示從拍攝影像82b所示的狀態起時間進一步的經過時的基板W的上表面的狀態。藉由時間的經過,於徑方向(基板W的徑方向)鄰接的干涉紋ST間的間隔係逐漸地變大。如攝影影像82c所示,例如當同時顯現於基板W上的干涉紋ST的數量成為三個左右時,成為以接近最小限度的厚度的液膜W1覆蓋基板W的狀態。在將此種紋模樣的狀態作為下一個處理的開始的基準之情形中,將構成該紋模樣之各個干涉紋ST中之至少一個干涉紋ST作為檢測對象,藉此適當地決定第二處理開始時序。The captured
拍攝影像82d係顯示從拍攝影像82c所示的狀態起時間進一步地經過時的基板W的上表面的狀態。在拍攝影像82d中,於基板W上出現了最後的干涉紋STL。比干涉紋STL更內側的區域係有局部性地發生無液體成分的乾燥區域之可能性。The captured
在此,設想在第一處理後所進行的第二處理為使用了第二處理液的液體處理之情形。第二處理液係與第一處理中的第一處理液不同之處理液,在第二處理中第二處理液係被供給至基板W的上表面。在此情形中,如拍攝影像82a、82b般,當在第一處理液的液膜W1厚的狀態下供給第二處理液時,會有從第一處理液置換成第二處理液耗時的可能性。此外,如拍攝影像82d般,當在局部性的發生乾燥區域的狀態下供給第二處理液時,因為第二處理液覆蓋的時間在每個基板W的位置不同,因此會有第二處理產生參差不齊的可能性。Here, it is assumed that the second treatment performed after the first treatment is a liquid treatment using a second treatment liquid. The second processing liquid is a processing liquid different from the first processing liquid in the first processing, and the second processing liquid is supplied to the upper surface of the substrate W in the second processing. In this case, like shooting
此外,在第二處理為旋乾處理等乾燥處理之情形中,如拍攝影像82d般,當局部性地發生乾燥區域時,會有第一處理液局部性地少量存在之情形。此種情形中,即使移行至高速旋轉亦有甩離耗時的可能性。因此,會有在拍攝影像82d的狀態(亦即已出現最後的干涉紋STL的狀態)之前開始高速旋轉為佳之情形。與此相對地,如拍攝影像82a、82b般,在第一處理液的液膜W1厚的狀態下移行至高速旋轉之情形中,會有第一處理液朝徑方向外側的移動發生偏差、被甩離的處理液碰撞到處理罩40等而污染腔室10內之可能性。因此,認為亦會有將液膜W1的厚度儘可能地減薄後再開始高速旋轉為佳之情形。In addition, in the case where the second treatment is a drying treatment such as spin drying treatment, as in the captured
因應第一處理以及第二處理的各個處理內容適當地設定作為時序決定部92的檢測對象的干涉紋ST,藉此時序決定部92能適當地決定第二處理開始時序。接著,說明干涉紋ST的檢測模式。The interference pattern ST to be detected by the
(第一檢測模式)
圖8係顯示干涉紋ST的第一檢測模式之圖。第一檢測模式係判定區域設定部91在拍攝影像82上設定一個判定區域DR11之態樣。判定區域DR11係在拍攝影像82上設定於形成有液膜W1的基板W的上表面。判定區域DR11的垂直方向的位置係在拍攝影像82中與基板W的中心一致。干涉紋ST係朝徑方向外側移動,藉此在判定區域DR11內干涉紋ST係朝拍攝影像82的水平方向通過。亦即,在判定區域DR11內,干涉紋ST係朝徑方向外側移動。(First detection mode)
FIG. 8 is a diagram showing the first detection mode of the interference pattern ST. The first detection mode is a state in which the determination
如圖8所示,判定區域DR11係設定成可僅與屬於檢測對象的一個干涉紋ST重疊之程度的大小。例如,判定區域DR11的徑方向(基板W的徑方向)的寬度(在拍攝影像82上為水平方向的寬度)係比鄰接的干涉紋ST間的徑方向(基板W的徑方向)的間隔還小。此外,干涉紋ST間的間隔係因應液膜W1的厚度而變動。例如,如圖7的拍攝影像82b所示般在液膜W1厚的狀態下干涉紋ST間的間隔相對性地較小;如拍攝影像82c所示般在液膜W1薄的狀態下干涉紋ST間的間隔相對性地較大。判定區域DR11的大小只要因應出現檢測對象的干涉紋ST時的干涉紋ST間的寬度來設定即可。As shown in FIG. 8, the determination area DR11 is set to a size that can overlap with only one interference pattern ST belonging to the detection target. For example, the width of the determination area DR11 in the radial direction (the radial direction of the substrate W) (the width in the horizontal direction on the captured image 82) is greater than the distance between adjacent interference fringes ST in the radial direction (the radial direction of the substrate W). small. In addition, the interval between the interference fringes ST varies in accordance with the thickness of the liquid film W1. For example, as shown in the captured
在此,將相對於周圍光強度相對性地較弱的區域作為干涉紋ST。因此,如圖8所示,通過判定區域DR11時,顯示判定區域DR11內的水平方向中的光強度之亮度係從徑方向內側朝外側逐漸地變小後再變大。此外,亮度成為極小值的地點(位置)係與干涉紋ST的大致中心的地點(位置)對應。因此,極值點檢測部921係檢測在判定區域DR11中採取亮度的極小值(基板W的徑方向中的光強度的極小值)之極值點,藉此能檢測判定區域DR11中之干涉紋ST的通過。Here, a region relatively weak with respect to the surrounding light intensity is referred to as interference fringe ST. Therefore, as shown in FIG. 8, when passing through the determination area DR11, the brightness of the light intensity in the horizontal direction in the display determination area DR11 gradually decreases from the radially inner side toward the outer side, and then becomes larger. In addition, the point (position) where the brightness becomes the minimum value corresponds to the point (position) of the approximate center of the interference fringe ST. Therefore, the extreme
此外,在將明亮的部分(在拍攝影像82上光強度相對性較大的區域)作為干涉紋捕捉之情形中,明亮的(亦即光強度大的)帶狀區域係朝徑方向外側移動。在此情形中,極值點檢測部921亦可檢測徑方向(基板W的徑方向)中之成為光強度(亮度)的極大值之極值點,藉此在判定區域DR11內檢測明亮的部分的干涉紋。In addition, in the case of capturing a bright portion (a region with relatively high light intensity on the captured image 82) as interference fringes, the bright (that is, high light intensity) band-shaped region moves toward the radially outer side. In this case, the extreme
在第一檢測模式之情形中,時序決定部92係算出第一檢測時間與第二檢測時間之間的差異的檢測時間差,第一檢測時間係檢測第n號(n為自然數)的干涉紋ST(第一極值點)之時間,第二檢測時間係檢測在第n+1號以後所發生的干涉紋ST(第二極值點)之時間。在此,第二檢測時間亦可為檢測第n+1號的干涉紋ST之時間,或亦可為在n+2號以後所發生的干涉紋ST之時間。由於干涉紋ST間的間隔係因應液膜W1的厚度而變動,因此認為檢測時間差係與液膜W1的厚度對應。例如,液膜W1的厚度愈小則檢測時間差愈大。因此,例如只要預先實驗性地決定與開始第二處理時最適當的液膜W1的厚度對應之最佳檢測時間差即可。而且,在時序決定部92實際檢測的檢測時間差成為最佳檢測時間之情形中,亦可判斷檢測對象的干涉紋ST並決定第二處理開始時序。換言之,例如時序決定部92亦可因應在判定區域DR11內檢測到一個極值點後直至檢測到下一個極值點為止的時間之檢測時間差來決定第二處理開始時序。如此,時序決定部92係能在例如判定區域DR11內因應基板W的徑方向中的光強度成為極大值或者極小值之極值點朝向徑方向外側之移動來決定對基板W進行第二處理之時序的第二處理開始時序。In the case of the first detection mode, the
此外,亦可在判定區域DR11內依據三個以上的干涉紋ST的各個檢測時間來判定是否已檢測到檢測對象的干涉紋ST。例如,算出第一個干涉紋ST(第一極值點)以及第二個干涉紋ST(第二極值點)的第一檢測時間差與第二個干涉紋ST(第二極值點)以及第三個干涉紋ST(第三極值點)的第二檢測時間差。在此,例如第一檢測時間差係檢測到第一個干涉紋ST(第一極值點)的第一檢測時間與檢測到第二個干涉紋ST(第二極值點)的第二檢測時間之間的差。第二檢測時間差係檢測到第二個干涉紋ST(第二極值點)的第二檢測時間與檢測到第三個干涉紋ST(第三極值點)的第三檢測時間之間的差。此外,亦可依據第一檢測時間差與第二檢測時間差的比較來決定第二處理開始時序。更具體而言,只要判定在第一檢測時間差與第二檢測時間差之間的差成為既定的值時已檢測到檢測對象的干涉紋ST並將該時間作為基準來決定第二處理開始時序即可。換言之,例如亦可為時序決定部92係依據第一檢測時間差與第二檢測時間差來決定第二處理開始時序,第一檢測時間差係在判定區域DR11內檢測到第一個干涉紋ST(第一極值點)後直至檢測到第二個干涉紋ST(第二極值點)為止的第一時間,第二檢測時間差係在判定區域DR11內檢測到第二個干涉紋ST(第二極值點)後直至檢測到第三個干涉紋ST(第三極值點)為止的第二時間。在此,考量第一個干涉紋至第三個干涉紋ST與三個極值點對應的態樣,該三個極值點係從與最後可檢測的最終極值點對應之最後的干涉紋STL起數來的三個極值點。In addition, it is also possible to determine whether or not the interference pattern ST of the detection target has been detected in the determination area DR11 based on the respective detection times of three or more interference patterns ST. For example, calculate the first detection time difference between the first interference pattern ST (first extreme point) and the second interference pattern ST (second extreme point) and the second interference pattern ST (second extreme point), and The second detection time difference of the third interference pattern ST (third extreme point). Here, for example, the first detection time difference is the first detection time when the first interference pattern ST (first extreme point) is detected and the second detection time when the second interference pattern ST (second extreme point) is detected. The difference between. The second detection time difference is the difference between the second detection time when the second interference pattern ST (second extreme point) is detected and the third detection time when the third interference pattern ST (third extreme point) is detected . In addition, the second processing start timing can also be determined based on the comparison between the first detection time difference and the second detection time difference. More specifically, it is only necessary to determine that the interference pattern ST of the detection target has been detected when the difference between the first detection time difference and the second detection time difference becomes a predetermined value, and use this time as a reference to determine the second processing start timing. . In other words, for example, the
如上所述,隨著液膜W1逐漸地變薄,亦即隨著接近最後的干涉紋STL的出現時間,干涉紋ST間的間隔係逐漸地變大。因此,在第一檢測模式之情形中,由於在判定區域DR11中一個干涉紋ST通過後直至下一個干涉紋ST通過為止所取得的圖幀(frame)數量逐漸地增大,因此提升檢測時間差的測定精度。因此,液膜W1愈薄,則時序決定部92愈能適當地判定檢測時間差是否與目的的膜厚對應。As described above, as the liquid film W1 gradually becomes thinner, that is, as the appearance time of the last interference fringe STL approaches, the interval between the interference fringes ST gradually becomes larger. Therefore, in the case of the first detection mode, since the number of frames obtained after one interference pattern ST passes in the determination area DR11 until the next interference pattern ST passes, the number of frames obtained gradually increases, thereby improving the detection time difference. Measurement accuracy. Therefore, the thinner the liquid film W1, the more appropriately the
此外,在液膜W1較薄的狀態下所發生的干涉紋ST(例如圖7所示的拍攝影像82d中之最後出現的干涉紋STL等)會有因為液面的搖晃等干擾而無法清晰地檢測之虞。因此,期望將可儘可能地清晰地檢測的干涉紋ST作為檢測對象。此外,只要於檢測到清晰的干涉紋ST的時間加上預定的延遲時間後的時間作為第二處理開始時序即可。藉此,能精度佳地檢測檢測對象的干涉紋ST,並能在液膜W1成為適當的厚度後開始第二處理。In addition, the interference pattern ST (such as the interference pattern STL that appears last in the captured
(第二檢測模式)
圖9係顯示干涉紋ST的第二檢測模式之圖。第二檢測模式係判定區域設定部91設定複數個判定區域DR21、DR22、DR23。換言之,設定有作為第一判定區域的判定區域DR21、從判定區域DR21朝徑方向外側離開之作為第二判定區域的判定區域DR22以及從判定區域DR22朝徑方向外側離開之作為第三判定區域的判定區域DR23。在圖9所示的例子中,從徑方向內側朝徑方向外側依序設定有三個判定區域DR21、DR22、DR23。此外,判定區域DR的數量並未限定於三個,亦可為兩個或者四個以上。(Second detection mode)
FIG. 9 is a diagram showing the second detection mode of the interference pattern ST. In the second detection mode, the determination
各個判定區域DR21、DR22、DR23係隔著間隔配置於拍攝影像82的水平方向。判定區域DR21、DR22、DR23的垂直方向的位置係在拍攝影像82中與基板W的中心位置一致。干涉紋ST係朝徑方向外側移動,藉此以判定區域DR21、判定區域DR22、判定區域DR23的順序通過各個判定區域。The respective determination areas DR21, DR22, and DR23 are arranged in the horizontal direction of the captured
與圖8的判定區域DR11同樣地,各個判定區域DR21、DR22、DR23係設定成不會同時地包含有複數個干涉紋ST之程度的大小。例如,各個判定區域DR的水平寬度係比鄰接的干涉紋ST間的徑方向的間隔還小。Similar to the determination area DR11 in FIG. 8, the determination areas DR21, DR22, and DR23 are set to a size that does not simultaneously include a plurality of interference fringes ST. For example, the horizontal width of each determination area DR is smaller than the interval in the radial direction between adjacent interference fringes ST.
配置有判定區域DR21、DR22、DR23之間隔係只要配合應檢測的複數個干涉紋ST的間隔來設定即可。具體而言,亦可在基板W的上表面中因應檢測對象的干涉紋ST的數量以及各個干涉紋ST的間隔來設定。The interval at which the determination areas DR21, DR22, and DR23 are arranged can be set in accordance with the interval between the plurality of interference patterns ST to be detected. Specifically, it can also be set in the upper surface of the substrate W in accordance with the number of interference fringes ST of the detection target and the interval between each interference fringe ST.
例如,如圖9所示,在檢測對象為以圖示的間隔所出現的三個干涉紋ST(干涉紋ST1、ST2、ST3)之情形中,配合該三個干涉紋ST的間隔配置有三個判定區域DR21、DR22、DR23。在此,例如考量下述態樣:將基板W的徑方向中干涉紋ST1與從該干涉紋ST1朝徑方向外側離開的干涉紋ST2之間的距離作為第一距離,將干涉紋ST2與從該干涉紋ST2朝徑方向外側離開的干涉紋ST3之間的距離作為第二距離。藉此,能在判定區域DR21、DR22、DR23中同時地檢測同時為檢測對象的三個干涉紋ST。亦即,只要在極值點檢測部921檢測到判定區域DR21、DR22、DR23的全部中採取極小值之極值點時時序決定部9判定成以檢測到檢測對象的各個干涉紋ST即可。此外,例如考量下述態樣:在判定區域DR的數量為兩個之情形中,在極值點檢測部921在作為第一判定區域的判定區域DR21中檢測到作為第一極值點的極值點且在作為第二判定區域的判定區域DR22中檢測到作為第二極值點的極值點時,時序決定部92係判定成已檢測到檢測對象的干涉紋ST1、ST2。在此態樣中,例如時序決定部92係能依據在作為第一判定區域的判定區域DR21中檢測到第一極值點以及在作為第二判定區域的判定區域DR22中檢測到第二極值點來決定第二處理開始時序。換言之,例如時序決定部92係能依據基板W的徑方向中的第一極值點與第二極值點之間的第一距離來決定第二處理開始時序。For example, as shown in FIG. 9, in the case where the detection target is three interference fringes ST (interference fringes ST1, ST2, ST3) that appear at the interval shown in the figure, three interference fringes ST are arranged at intervals corresponding to the three interference fringes ST. Determine areas DR21, DR22, DR23. Here, for example, the following aspect is considered: the distance between the interference fringe ST1 in the radial direction of the substrate W and the interference fringe ST2 separated from the interference fringe ST1 in the radial direction outer side is taken as the first distance, and the interference fringe ST2 is taken from The distance between the interference fringes ST3 spaced outward in the radial direction is the second distance. Thereby, it is possible to simultaneously detect the three interference patterns ST that are the detection targets in the determination areas DR21, DR22, and DR23. That is, when the extreme
各個判定區域DR21、DR22、DR23的位置亦可構成為作業者能任意地設定。在此情形中,例如只要預先取得出現有檢測對象的各個干涉紋ST的狀態的拍攝影像82且作業者使顯示判定區域DR21、DR22、DR23之框架在拍攝影像82上移動至各個干涉紋ST的位置即可。藉此,能於可同時地檢測檢測對象的各者干涉紋ST之各個位置設定各個判定區域DR21、DR22、DR23。The positions of the respective determination regions DR21, DR22, and DR23 may also be configured to be arbitrarily set by the operator. In this case, for example, it is only necessary to obtain in advance the captured
尤其是,亦可將從最後的干涉紋STL起數來的三個干涉紋ST作為檢測對象的三個干涉紋ST1、ST2、ST3。亦即,亦可將最後的干涉紋STL作為最內側的檢測對象的干涉紋ST1,將即將發生最後的干涉紋STL前的兩個干涉紋ST作為檢測對象的干涉紋ST2、ST3。在此情形中,能在液膜W1變成無法檢測干涉紋ST的薄度之前的階段決定進行第二處理之時序。最後的干涉紋STL係與最後可檢測的最終極值點對應。換言之,在此例如在判定區域DR21、DR22、DR23中檢測複數個極值點中從最終極值點起數來的三個極值點,藉此能將最後的干涉紋STL以及即將在最後的干涉紋STL之前所發生的兩個干涉紋ST作為三個干涉紋ST1、ST2、ST3檢測並決定第二處理開始時序。如此,時序決定部92係在例如判定區域DR21、DR22、DR23內因應基板W的徑方向中的光強度成為極大值或者極小值之極值點朝向徑方向外側之移動來決定對基板W進行第二處理之時序的第二處理開始時序。In particular, three interference fringes ST counted from the last interference fringe STL may be used as the three interference fringes ST1, ST2, ST3 to be detected. That is, the last interference fringe STL may be used as the innermost interference fringe ST1 to be detected, and the two interference fringes ST immediately before the last interference fringe STL may be used as the detected interference fringes ST2 and ST3. In this case, it is possible to determine the timing of the second process before the liquid film W1 becomes unable to detect the thinness of the interference pattern ST. The last interference pattern STL corresponds to the last detectable extreme point. In other words, here, for example, three extreme points counted from the final extreme point are detected in the determination areas DR21, DR22, and DR23, so that the final interference pattern STL and the final interference fringe STL can be detected. The two interference fringes ST occurring before the interference fringe STL are detected as three interference fringes ST1, ST2, ST3, and the second processing start timing is determined. In this way, the
(第三檢測模式)
圖10係顯示干涉紋ST的第三檢測模式之圖。第三檢測模式係判定區域設定部91於拍攝影像82上設定一個判定區域DR31。判定區域DR31係朝徑方向(基板W的徑方向)延伸之形狀(在此為沿著拍攝影像82中的水平方向延伸之形狀)。判定區域DR31係設定成可同時地與檢測對象的複數個干涉紋ST重疊之大小。(Third detection mode)
FIG. 10 is a diagram showing the third detection mode of the interference pattern ST. In the third detection mode, the determination
在第三檢測模式中,極值點檢測部921係檢測判定區域DR31中採取極值的極小值之極值點。時序決定部92係特定在判定區域DR31內採取極小值之極值點,藉此檢測檢測對象的干涉紋ST。具體而言,時序決定部92係依據在判定區域DR31內所算出的極值點間距離檢測檢測對象的干涉紋ST。極值點間距離係指在判定區域DR31內亮度成為極小值之地點(位置)之間的距離。極值點間距離係例如包含有第一極值點與從該第一極值點朝徑方向外側離開的第二極值點之間的距離(第一距離)。極值點間距離係亦可例如包含有第二極值點與從該第二極值點朝徑方向外側離開的第三極值點之間的距離(亦稱為第二距離)。在圖10所示的例子中,檢測對象係三個干涉紋ST1、ST2、ST3。在此情形中,只要預先設定與這三個干涉紋ST1、ST2、ST3的各個間隔相當之距離L1、L2且時序決定部92判定在判定區域DR31內所檢測的各個極值點間距離是否與距離L1、L2對應即可。在判定區域DR31內存在有干涉紋ST1、ST2、ST3之情形中,判定成各個極值點間距離與距離L1、L2對應,藉此檢測到檢測對象的干涉紋ST1、ST2、ST3。In the third detection mode, the extreme value
此外,時序決定部92亦可依據在判定區域DR31內所檢測的極值點的數量來檢測檢測對象的干涉紋ST。在圖10所示的例子中,檢測對象為三個干涉紋ST1、ST2、ST3。因此,時序決定部92只要在判定區域DR31內檢測到三個極值點之情形中判定成已檢測到檢測對象的干涉紋ST1、ST2、ST3即可。In addition, the
亦可依據極值點間距離L1、L2來決定第二處理開始時序。例如,亦可在極值點間距離L1、L2的差成為既定的值時判定成已檢測到檢測對象的干涉紋ST1、ST2、ST3。換言之,例如時序決定部92亦可在作為第一距離的極值點間距離L1成為既定的距離且作為第二距離的極值點間距離L2成為既定的距離時判定成已檢測到檢測對象的干涉紋ST1、ST2、ST3。此時,時序決定部92係可依據第一距離與第二距離來決定第二處理開始時序。此外,例如時序決定部92亦可在作為第一距離的極值點間距離L1成為既定的距離時判定成已檢測到檢測對象的干涉紋ST1、ST2。在此情形中,時序決定部92係可依據作為第一距離的極值點間距離L1來決定第二處理開始時序。此外,例如時序決定部92亦可在作為第二距離的極值點間距離L2成為既定的距離時判定成已檢測到檢測對象的干涉紋ST2、ST3。此時,時序決定部92係可依據作為第二距離的極值點間距離L2來決定第二處理開始時序。如此,時序決定部92例如係能因應判定區域DR31內基板W的徑方向中的光強度成為極大值或者極小值之極值點來決定作為對基板W進行第二處理之時序的第二處理開始時序。從其他的觀點而言,時序決定部92係例如能因應判定區域DR31內朝向基板W的徑方向中光強度成為極大值或者極小值之極值點的徑方向外側的移動來決定作為對基板W進行第二處理之時序的第二處理開始時序。The second processing start timing can also be determined according to the distances L1 and L2 between the extreme points. For example, it may be determined that the interference pattern ST1, ST2, ST3 of the detection target has been detected when the difference between the distances L1 and L2 between the extreme points becomes a predetermined value. In other words, for example, the
圖11係顯示用以決定第二處理開始時序之處理的流程之圖。圖11所示的流程係顯示將IPA處理(圖6中的步驟S13)作為第一處理並將撥水化處理(圖6中的步驟S14)作為第二處理來決定第二處理開始時序(開始噴出撥水化劑之時序)之處理的流程。FIG. 11 is a diagram showing the process flow for determining the start timing of the second process. The flow shown in Fig. 11 shows that the IPA process (step S13 in Fig. 6) is used as the first process and the water repellent treatment (step S14 in Fig. 6) is used as the second process to determine the second process start timing (start The process flow of the sequence of spraying water repellent agent).
在IPA處理(圖6中的步驟S13)中,從噴嘴30對基板W的上表面供給IPA(步驟S21)。在此期間中,照相機70係進行連續拍攝(步驟S22)。所謂連續拍攝係指照相機以一定間隔連續地拍攝拍攝區域,例如以33毫秒間隔進行連續拍攝。藉由該連續拍攝,取得已將基板W的上表面的狀態影像化的拍攝影像82。In the IPA process (step S13 in FIG. 6), IPA is supplied from the
當開始連續拍攝時,對已取得判定區域設定部91的拍攝影像82設定判定區域DR(步驟S23)。在步驟S23中所設定的判定區域DR係根據檢測對象的干涉紋ST的檢測模式而不同。例如,在圖8所說明的第一檢測模式之情形中,對拍攝影像82設定有一個判定區域DR11。此外,例如在圖9所說明的第二檢測模式之情形中,對拍攝影像82設定判定區域DR之工序係可包含有變更作為第二判定區域的判定區域DR22相對於作為第一判定區域的判定區域DR21之基板W的徑方向中的相對性的位置之工序。When the continuous shooting is started, the determination area DR is set for the captured
此外,在噴出IPA之期間,並不一定需要開始連續拍攝。例如,亦可在從基板W被搬入至腔室10的時間點起直至基板W被搬出為止的期間進行連續拍攝。In addition, it is not necessary to start continuous shooting while the IPA is being sprayed. For example, continuous imaging may be performed from the time when the substrate W is carried into the
當設定了判定區域DR時,停止從噴嘴30對基板W供給IPA(步驟S24)。在此時間點,結束IPA處理(圖6中的步驟S13)。如上所述,當停止供給IPA時,基板W上的IPA係藉由離心力而朝徑方向外側被甩離。藉此,液膜W1逐漸地變薄,開始出現干涉紋ST。When the determination area DR is set, the supply of IPA from the
極值點檢測部921係檢測在判定區域DR中採取徑方向中的亮度的極小值之極值點(步驟S25)。藉此,於判定區域DR重疊的干涉紋ST係作為採取極小值之極值點被檢測到。The extreme
時序決定部92係依據極值點檢測部921所為之極小值的檢測結果判定是否已檢測到檢測對象的干涉紋ST(步驟S26)。此判定的具體性的內容係根據干涉紋ST的檢測模式而不同。在判定成未檢測到檢測對象的干涉紋ST之情形中(步驟S26中為「否」),返回至步驟S25,繼續進行極小值的檢測。The
例如,在圖8所示的第一檢測模式之情形中,時序決定部92係在判定區域DR11中所檢測到的干涉紋ST間的檢測時間差與預先設定的最佳檢測時間差對應時判定成已檢測到檢測對象的干涉紋ST。此外,在圖9所示的第二檢測模式之情形中,時序決定部92係在判定區域DR21、DR22、DR23中同時地檢測到干涉紋ST時判定成已檢測到檢測對象的干涉紋ST1、ST2、ST3。此外,在圖10所示的第三檢測模式之情形中,時序決定部92係在判定區域DR31中已檢測到極小值之地點(位置)間的極值點間距離與預先設定的距離L1、L2對應時判定成已檢測到檢測對象的干涉紋ST1、ST2、ST3。For example, in the case of the first detection mode shown in FIG. 8, the
返回至圖11,在時序決定部92判定成已檢測到檢測對象的干涉紋ST之情形中(在步驟S26中為「是」),時序決定部92係決定第二處理開始時序(步驟S27)。時序決定部92係因應已檢測到檢測對象的干涉紋ST之檢測結束時間(已檢測到與檢測對象的干涉紋ST對應的極小值之時間)來決定第二處理開始時序。例如,時序決定部92係將從檢測結束時間起加上預先設定的延遲時間所求出的時間作為第二處理開始時序。Returning to FIG. 11, when the
當在步驟S27中決定第二處理開始時序時,以第二處理開始時序開始從噴嘴30朝基板W的上表面噴出撥水化劑(步驟S28)。藉此,開始撥水化處理(圖6中的步驟S14)。控制部9係在步驟S28中依循時序決定部92所決定的時序從噴嘴30噴出撥水化劑而作為下一個處理。亦即,控制部9係因應第二處理開始時序執行屬於下一個處理的撥水化處理。因此,控制部9、噴嘴30以及用以對噴嘴30供給撥水化劑之機構係能作為第二處理執行部的一例。第二處理執行部係用以對處理對象的基板W進行第二處理之部分,並能因應時序決定部92所決定的時序對基板W進行第二處理。When the second process start timing is determined in step S27, the spray of the water-repellent agent from the
在步驟S27中,為了決定第二處理開始時序而從檢測結束時間起所加算的延遲時間的長度亦可由事前的實驗性的基板處理而決定。具體而言,在檢測到檢測對象的干涉紋ST後,以不同的延遲時間開始撥水化處理,並評價藉此所獲得的基板W的疏水化狀態。亦可依據此評價結果決定最佳的延遲時間。In step S27, the length of the delay time added from the detection end time in order to determine the second processing start timing may also be determined by prior experimental substrate processing. Specifically, after detecting the interference pattern ST of the detection target, the water-repellent treatment is started with a different delay time, and the hydrophobization state of the substrate W obtained thereby is evaluated. The best delay time can also be determined based on the evaluation result.
此外,在步驟S27中,並不一定需要將第二處理開始時序設定成從檢測結束時間起加上既定的延遲時間的時間。例如,亦可將第二處理開始時序作為檢測結束時間。在此情形中,在步驟S26中,當判定成已檢測到檢測對象的干涉紋ST時,立即開始噴出撥水化劑。In addition, in step S27, it is not always necessary to set the second processing start timing to a time from the detection end time plus a predetermined delay time. For example, the second processing start sequence may also be used as the detection end time. In this case, in step S26, when it is determined that the interference pattern ST of the detection target has been detected, the spraying of the water-repellent agent is started immediately.
在圖11中雖然為在第一處理為IPA處理且第二處理為撥水化處理之情形中的第二處理開始時序的決定處理,但第一處理與第二處理的組合並未限定於此。例如,在第一處理為撥水化處理後的IPA處理(圖6中的步驟S15)且第二處理為旋乾處理(圖6中的步驟S16)之情形中亦可應用第二處理開始時序的決定處理。在此情形中,控制部9係依循時序決定部92所決定的第二處理開始時序控制自轉夾具20的自轉馬達22,藉此使基板W的旋轉速度從300rpm上升至1500rpm。亦即,控制部9係因應第二處理開始時序執行屬於第二處理的旋乾處理。因此,控制部9以及自轉馬達22係能作為第二處理執行部。在此種情形中,例如作為第二處理的旋乾處理係成為下述處理:將基板W的旋轉速度設定成比作為第一處理的IPA處理時還大,並去除殘留於基板W的上表面之作為第一處理液的IPA。Although FIG. 11 shows the determination processing of the second processing start timing when the first processing is the IPA processing and the second processing is the water repellent processing, the combination of the first processing and the second processing is not limited to this . For example, when the first process is the IPA process after the water repellent process (step S15 in FIG. 6) and the second process is the spin-drying process (step S16 in FIG. 6), the second process start sequence can also be applied. The decision to deal with. In this case, the
(功效)
依據基板處理裝置100,能以適當的時序對已進行過屬於液體處理的第一處理之基板W執行第二處理。(effect)
According to the
在第二處理為液體處理之情形中(例如在第一處理為IPA處理(圖6中的步驟S13)且第二處理為潑水化處理(圖6中的步驟S14)之情形中),能將第一處理液的膜(液膜W1的膜)儘量地減薄後再供給第二處理液。在此情形中,由於能將基板W上的第一處理液的量減少,因此能促進從第一處理液置換成第二處理液。藉此,能縮短第二處理的處理時間。此外,由於能減少第二處理液的使用量,因此能降低基板處理的成本。In the case where the second treatment is liquid treatment (for example, in the case where the first treatment is IPA treatment (step S13 in FIG. 6) and the second treatment is water repellent treatment (step S14 in FIG. 6)), the The film of the first treatment liquid (the film of the liquid film W1) is as thin as possible before the second treatment liquid is supplied. In this case, since the amount of the first processing liquid on the substrate W can be reduced, the replacement from the first processing liquid to the second processing liquid can be promoted. Thereby, the processing time of the second processing can be shortened. In addition, since the amount of the second processing liquid used can be reduced, the cost of substrate processing can be reduced.
在第二處理為乾燥處理之情形中(例如在第一處理為IPA處理(圖6中的步驟S15)且第二處理為旋乾處理(圖6中的步驟S16)之情形中),依據基板處理裝置100,能在第一處理液的液膜適當的狀態下移行至乾燥處理。因此,能抑制液膜過度地隆起。藉此,能均勻地處理基板表面。In the case where the second process is a drying process (for example, when the first process is an IPA process (step S15 in FIG. 6) and the second process is a spin-drying process (step S16 in FIG. 6)), the substrate The
(針對用以檢測干涉紋ST之條件設定)
圖12係顯示用以設定用以檢測干涉紋ST的條件之設定畫面SW1之圖。在基板處理裝置100中,在顯示部97所顯示的處理程式作成畫面(未圖示)中,作業者係進行用以決定在各個洗淨處理單元1中執行的處理內容之處理。設定畫面SW1係從處理程式作成畫面移行並顯示之畫面。(For the condition setting for detecting interference pattern ST)
FIG. 12 is a diagram showing the setting screen SW1 for setting the conditions for detecting the interference pattern ST. In the
設定畫面SW1係作為顯示於顯示部97的畫面整體或者一部分之視窗而顯示。當作業者在設定畫面SW1進行預定的操作時,判定區域設定部91係因應操作輸入來設定判定區域DR的條件。判定區域設定部91係在圖11所示的步驟S23中將符合設定的條件之判定區域DR設定於用以檢測檢測對象的干涉紋ST之拍攝畫面82上。The setting screen SW1 is displayed as a window of the whole or part of the screen displayed on the
於設定畫面SW1定義有用以顯示各種資訊之顯示區域DA1、DA2、DA3、DA4、DA5、DA6。於顯示區域DA1顯示有第一處理以及第二處理的內容。於顯示區域DA1顯示有被指定的處理的內容,例如顯示有處理液的種類、處理液的噴出量、處理液的噴出時間以及處理液噴出時的基板W的旋轉數等處理條件的各個參數。此外,在顯示區域DA1中,亦可依據作業者的輸入操作接受各個參數的變更。在顯示區域DA1中,當作業者設定第一處理或者第二處理的處理內容時,決定第二處理開始時序。於顯示區域DA1定義有用以顯示在後述的顯示區域DA2、DA3中所選擇的檢測模式以及位置模式之區域。Define the display areas DA1, DA2, DA3, DA4, DA5, DA6 for displaying various information in the setting screen SW1. The contents of the first process and the second process are displayed in the display area DA1. The content of the designated process is displayed in the display area DA1, such as the type of the process liquid, the amount of process liquid discharged, the discharge time of the process liquid, and the number of rotations of the substrate W when the process liquid is discharged. In addition, in the display area DA1, the change of each parameter can also be accepted in accordance with the input operation of the operator. In the display area DA1, when the operator sets the processing content of the first processing or the second processing, the second processing start timing is determined. The display area DA1 defines an area for displaying the detection mode and the position mode selected in the display areas DA2 and DA3 described later.
當設定了第一處理以及第二處理時,時序決定部92係依據這些處理條件自動地決定屬於檢測對象的干涉紋ST。作為決定處理用的事前準備,只要針對第一處理以每個不同的條件預先特定檢測對象的干涉紋ST即可。在此情形中,在變更處理液、噴出量、旋轉數的各個條件並進行了第一處理之各個情形中,只要決定第二處理的較佳的開始時序並決定與該開始時序對應的干涉紋ST即可。When the first processing and the second processing are set, the
於顯示區域DA2顯示有用以選擇檢測模式之各個按鍵BT11、BT12、BT13、BT14。各個按鍵BT11、BT12、BT13係操作部,用以將干涉紋ST的檢測模式設定成上述第一檢測模式至第三檢測模式(參照圖8至圖10)中的任一者。作業者係操作按鍵BT11、BT12、BT13的任一者,藉此選擇對應的檢測模式。在此,藉由操作按鍵BT11來選擇第一檢測模式,並於顯示區域DA1顯示有用以表示選擇結果之顯示。按鍵BT14係用以自動地設定檢測模式之操作部。當操作按鍵BT14時,自動地選擇第一檢測模式至第三檢測模式中的任一者。In the display area DA2, buttons BT11, BT12, BT13, and BT14 for selecting the detection mode are displayed. Each of the buttons BT11, BT12, and BT13 is an operating unit for setting the detection mode of the interference pattern ST to any one of the first detection mode to the third detection mode (refer to FIGS. 8 to 10). The operator operates any one of the buttons BT11, BT12, and BT13 to select the corresponding detection mode. Here, the first detection mode is selected by operating the button BT11, and the display area DA1 is displayed to indicate the selection result. The button BT14 is used to automatically set the operation part of the detection mode. When the key BT14 is operated, any one of the first detection mode to the third detection mode is automatically selected.
於顯示區域DA3顯示有用以選擇判定區域DR的位置模式之各個按鍵BT21、BT22、BT23、BT24。當作業者操作按鍵BT21、BT22、BT23、BT24的任一者時,因應被操作的按鍵設置有判定區域DR的位置模式。被按鍵BT21、BT22、BT23指派的內容只要預先設定於顯示區域DA2中被選擇的每個檢測模式即可。例如,在第一檢測模式之情形中,只要使配置有一個判定區域DR11之位置(例如徑方向的位置)在按鍵BT21、BT22、BT23之間不同即可。在第二檢測模式之情形中,只要使各個判定區域DR21、DR22、DR23之間的徑方向中的間隔在按鍵BT21、BT22、BT23之間不同即可。In the display area DA3, buttons BT21, BT22, BT23, and BT24 for selecting the position mode of the determination area DR are displayed. When the operator operates any one of the buttons BT21, BT22, BT23, and BT24, the position pattern of the determination area DR is set in accordance with the operated button. The content assigned by the keys BT21, BT22, and BT23 only needs to be preset in each detection mode selected in the display area DA2. For example, in the case of the first detection mode, the position (for example, the position in the radial direction) where one determination area DR11 is arranged may be different among the buttons BT21, BT22, and BT23. In the case of the second detection mode, it is only necessary to make the interval in the radial direction between the respective determination areas DR21, DR22, and DR23 different between the buttons BT21, BT22, and BT23.
在操作按鍵BT24之情形中,判定區域設定部91係自動地設定判定區域DR的位置。例如,判定區域設定部91係可於作為初始值預先設定的位置設定判定區域DR,或者亦可依據預定的判斷基準設定判定區域DR的位置。在後者之情形中,只要因應檢測對象的干涉紋ST於適合干涉紋ST的檢測之位置設定判定區域即可。In the case of operating the button BT24, the determination
於顯示區域DA4顯示有用以選擇處理對象的基板W的種類之各個按鍵BT31、BT32、BT33。基板W的種類較佳為例如與會影響干涉紋ST的出現之各個狀態對應,例如與基板W的大小、基板W的上表面中有無電路圖案等構造物、基板W的上表面對於水的親和性(疏水性、親水性)等對應。The buttons BT31, BT32, and BT33 for selecting the type of substrate W to be processed are displayed in the display area DA4. The type of substrate W preferably corresponds to, for example, various states that affect the appearance of interference fringes ST, such as the size of substrate W, the presence or absence of structures such as circuit patterns on the upper surface of substrate W, and the affinity of the upper surface of substrate W for water (Hydrophobicity, hydrophilicity) etc.
於顯示區域DA5顯示有拍攝影像82。拍攝影像82係可為藉由過去的照相機70的拍攝所獲得的拍攝影像,亦可為即時的照相機70的拍攝所獲得的拍攝影像。較佳為因應在顯示區域DA2、DA3中所選擇的檢測模式以及位置模式於拍攝影像82顯示有用以表示判定區域DR之矩形狀的框。例如,在選擇第一檢測模式之情形中只要顯示有一個判定區域DR11即可。A
亦可在拍攝影像82上接受用以變更判定區域DR的位置之操作。例如,亦可接受拖曳(drag)操作,藉此將判定區域DR變更至移動後的位置。判定區域DR的移動操作亦可以僅變更與徑方向對應的一方向(在此為拍攝影像82的水平方向)之方式進行。在此情形中,由於能配合干涉紋ST的移動方向(徑方向外側)變更判定區域DR的位置,因此能容易地設定判定區域DR。It is also possible to accept an operation for changing the position of the determination area DR on the captured
在顯示藉由過去的拍攝所獲得的拍攝影像82之情形中,能採用從在顯示區域DA1所指定的第一處理移行至第二處理時出現有檢測對象的干涉紋ST之拍攝影像82(例如圖7所示的拍攝影像82b、82c)。在此情形中,由於作業者係能一邊目視干涉紋ST一邊使判定區域DR的框移動,因此能將判定區域DR設定於適當的位置。此外,亦可在顯示區域DA5中連續播放藉由連續拍攝所獲得的一連串的拍攝影像82,藉此進行動畫顯示。在此情形中,亦可準備用以控制播放或者停止等顯示之各種按鍵,並接受作業者所進行的顯示控制。藉此,作業者係能一邊確認干涉紋ST出現的樣子一邊適當地設定判定區域DR的條件。In the case of displaying the photographed
顯示區域DA6係用以接受目標膜厚的輸入之區域。目標膜厚係開始第二處理時成為基準之第一處理液的液膜W1的厚度。當輸入目標膜厚時,時序決定部92係特定與目標膜厚對應時所出現的干涉紋ST。為了此種特定處理,作為事前準備,在第一處理中停止從噴嘴30噴出處理液後,測定液膜W1的厚度。只要特定各個干涉紋ST出現時的各個出現時間與液膜W1的厚度之間的關係即可。在此情形中,在針對變更處理液、噴出量、旋轉數的各個條件並進行了第一處理之各個情形中,只要決定與各個干涉紋ST的出現時序對應之液膜W1的厚度即可。此外,在測定厚度之基板W的位置亦可為基板W的中心、外緣或者基板W的中心與外緣的中間的位置之任一者。The display area DA6 is an area for receiving the input of the target film thickness. The target film thickness is the thickness of the liquid film W1 of the first processing liquid used as a reference when the second processing is started. When the target film thickness is input, the
在顯示區域DA6中輸入目標膜厚之情形中,亦可在顯示區域DA2、DA3中因應與目標膜厚對應之干涉紋ST,將已因應干涉紋ST的檢測模式以及位置模式的候補篩選出並進行顯示。在此情形中,只要事前針對每個檢測對象的干涉紋ST決定檢測模式以及位置模式即可。In the case of inputting the target film thickness in the display area DA6, the interference pattern ST corresponding to the target film thickness can also be selected in the display areas DA2 and DA3, and the candidates for the detection mode and position mode of the interference pattern ST can be selected and combined. To display. In this case, it is only necessary to determine the detection mode and the position mode for each interference pattern ST of the detection target in advance.
此外,會有因為第一處理中的旋轉數或者噴出時間的條件而無法到達被輸入的目標膜厚從而無法特定檢測對象的干涉紋ST之情形。在此種情形中,亦可在設定畫面SW1上等進行「無法偵測,請延長步驟時間」等之顯示。藉此,能促進作業者變更處理條件。In addition, there may be cases in which the input target film thickness cannot be reached due to the number of revolutions or ejection time conditions in the first process, and the interference pattern ST of the detection target cannot be specified. In this case, you can also display "Unable to detect, please extend the step time" on the setting screen SW1. Thereby, it is possible to encourage the operator to change the processing conditions.
(2)第二實施形態 接著,說明第二實施形態。在以下的說明中,對具有與已經說明的要素相同或者類似的功能之要素附上相同的元件符號或者附上追加有英文字母的元件符號,並省略詳細的說明。(2) Second embodiment Next, the second embodiment will be described. In the following description, elements having the same or similar functions as those already described are assigned the same reference numerals or reference numerals added with English letters, and detailed descriptions are omitted.
圖13係顯示第二實施形態的基板處理裝置100A之圖。基板處理裝置100A的控制部9A係具備有時序決定部92A。時序決定部92A係具備有特徵向量抽出部922以及分類器K2。FIG. 13 is a diagram showing a
特徵向量抽出部922係從藉由步驟S22的連續拍攝所取得的一連串的拍攝影像82的各者抽出複數種類的特徵量的配列的特徵向量。特徵量的項目係例如灰階(gray scale)中的像素值或者亮度的總和、像素值或者亮度的標準偏差等。The feature
分類器K2係依據藉由特徵向量抽出部922所抽出的特徵向量,在第一類別(class)與第二類別之間將拍攝影像82分類,第一類別係顯示成為第二處理開始時序的決定的基準之影像,第二類別係顯示不會成為第二處理開始時序的決定的基準之影像。The classifier K2 is based on the feature vector extracted by the feature
時序決定部92A係藉由分類器K2將一連串的拍攝影像82分類。在已出現被分類於第一類別的拍攝影像82之情形中,時序決定部92A係因應取得拍攝影像82的時間來決定第二處理開始時序。亦即,分類器K2係影像判定部的一例,用以依據複數種類的特徵向量判定拍攝影像是否為成為第二處理開始時序的決定的基準之影像。The
如圖13所示,於控制部9A連接有通訊部99。通訊部99係為了使控制部9A與伺服器8進行資料通訊而設置。基板處理裝置100A、通訊部99以及伺服器8係構成基板處理系統。分類器K2係伺服器8藉由機械學習而生成,且從伺服器8經由通訊部99提供至控制部9A。As shown in FIG. 13, a
伺服器8係具備有機械學習部80。機械學習部80係藉由機械學習生成分類器K2。作為機械學習,能採用類神經網路(neural network)、決策樹(decision tree)、支援向量機(SVM;support vector machine)、判別分析等公知的手法。The server 8 is equipped with a
作為使用於機械學習部80的機械學習之教師資料,例如能利用用以對藉由照相機70所獲得的拍攝影像82(或者拍攝影像82的特徵向量)各者教示類別之教師資料。藉由照相機70所獲得的拍攝影像82係能從基板處理裝置100A經由通訊部99提供至伺服器8。As the teacher data for machine learning used in the
例如,在將圖7所示的拍攝影像82a、82c、82d作為教師資料之情形中,在成為第二處理開始時序的基準之拍攝影像82為拍攝影像82c(亦即於基板W上出現的干涉紋ST的數量為三個的狀態)時,針對該拍攝影像82c教示用以顯示第二處理開始時序的基準之第一分類。接著,只要針對拍攝影像82a、82b、82d教示用以顯示不是第二處理開始時序的基準之第二分類即可。準備多個此種各個教師資料並使機械學習部80學習,藉此生成分類器K2,分類器K2係用以使機械學習部80依據特徵向量將拍攝影像82在第一類別以及第二類別之間分類。For example, in the case where the captured
分類器K2係只要針對每個基板W的種類(例如基板W的大小、基板W的上表面中有無電路圖案等構造物、基板W的上表面對於水的親和性(疏水性、親水性))或者針對與第一處理不同的每個條件(處理液的種類、噴出量、噴出時間)生成複數種類的分類器K2即可。在此情形中,只要針對每個基板W的種類或者針對與第一處理不同的每個條件準備教師資料並進行機械學習即可。The classifier K2 is for each type of substrate W (for example, the size of the substrate W, whether there are structures such as circuit patterns on the upper surface of the substrate W, and the affinity (hydrophobicity, hydrophilicity) of the upper surface of the substrate W for water) Or, it is sufficient to generate a plurality of types of classifiers K2 for each condition (type of processing liquid, ejection amount, ejection time) different from the first process. In this case, it is only necessary to prepare teacher materials for each type of substrate W or for each condition different from the first process and perform machine learning.
亦可使複數台基板處理裝置100A可通訊地連接於伺服器8,並從伺服器8對各個基板處理裝置100A提供分類器K2。It is also possible to connect a plurality of
並不一定需要從伺服器8提供分類器K2。例如,分類器K2亦可經由光學媒體、快閃記憶體等記憶媒體提供至控制部9A。此外,基板處理裝置100A亦可具備有機械學習部80,藉此在基板處理裝置100A中生成分類器K2。It is not necessary to provide the classifier K2 from the server 8. For example, the classifier K2 may also be provided to the
在基板處理裝置100A中,第二處理開始時序的決定處理係在圖11所示的步驟S24(停止供給IPA)後,時序決定部92A係藉由分類器K2將照相機70所取得的一連串的拍攝影像82進行類別分類從而檢測成為第二處理開始時序的基準之拍攝影像82。接著,時序決定部92A係將已檢測到拍攝影像82之檢測時間或者從檢測時間加上既定的延遲時間之時間作為第二處理開始時序。In the
在本實施形態中,分類器K2係依據拍攝影像82的整體進行類別分類。因此,將拍攝影像82的整體作為判定區域。此外,如上所述,分類器K2係將已因應干涉紋ST的出現狀態教示了類別的拍攝影像82作為教師資料並藉由機械學習而生成。因此,時序決定部92A係因應判定區域內中朝徑方向外側移動的干涉紋ST(在拍攝影像82上針對光強度的極值點)來決定第二處理的開始時序。In this embodiment, the classifier K2 performs classification based on the entire captured
在本實施形態中,亦能依據因應第一處理液的液膜W1的厚度而出現的干涉紋ST來決定第二處理開始時序。因此,在第二處理為液體處理之情形中,由於能在儘可能地減薄液膜W1後開始第二處理藉此促進從第一處理液置換成第二處理液,因此能縮短第二處理液的供給量以及供給時間。此外,在第二處理為乾燥處理之情形中,亦能在第一處理液的液膜W1為最佳厚度時開始乾燥處理。In this embodiment, the second processing start timing can also be determined based on the interference pattern ST that appears in response to the thickness of the liquid film W1 of the first processing liquid. Therefore, in the case where the second treatment is liquid treatment, the second treatment can be started after the liquid film W1 is reduced as much as possible to promote the replacement from the first treatment liquid to the second treatment liquid, so that the second treatment can be shortened. Liquid supply amount and supply time. In addition, in the case where the second treatment is a drying treatment, the drying treatment can also be started when the liquid film W1 of the first treatment liquid has an optimal thickness.
此外,並不一定需要將拍攝影像82的整體作為教師資料。例如,能從拍攝影像82中僅將判定區域DR內的影像部分作為教師資料來利用。在此情形中,由於能縮小影像尺寸,因此能降低各種運算處理量。In addition, it is not necessarily necessary to use the entire captured
雖然已詳細地說明本發明,但上述說明的全部實施形態僅為例示性,本發明並未限定於這些實施形態。只要未逸離本發明的精神範圍,能夠涵蓋未示例的無數種變化例。在上述各個實施形態以及各個變化例所說明的各個構成只要未相互地矛盾,則可組合或者省略。Although the present invention has been described in detail, all the embodiments described above are only examples, and the present invention is not limited to these embodiments. As long as it does not deviate from the spirit and scope of the present invention, countless variations that are not illustrated can be covered. The respective configurations described in the above-mentioned respective embodiments and respective modification examples may be combined or omitted as long as they do not contradict each other.
1:洗淨處理單元 8:伺服器 9、9A:控制部 10:腔室 11:側壁 12:頂壁 13:底壁 14:FFU 15:區隔板 18:排氣導管 20:自轉夾具 21:基座基座 21a:保持面 22:自轉馬達 23:蓋構件 24:旋轉軸 25:鍔狀構件 26:夾具銷 28:下表面處理液噴嘴 30、60、65:噴嘴 31:噴出頭 32、67:噴嘴臂 33、63、68:噴嘴基台 40:處理罩 41:內罩 42:中罩 43:外罩 43a、52a:下端部 43b、47b、52b:上端部 43c、52c:折返部 44:底部 45:內壁部 46:外壁部 47:第一導引部 48:中壁部 49:廢棄槽 50:內側回收槽 51:外側回收槽 52:第二導引部 53:處理液分離壁 70:照相機 71:照明部 80:機械學習部 82、82a、82b、82c、82d:拍攝影像 91:判定區域設定部 92、92A:時序決定部 96:記憶部 97:顯示部 98:輸入部 99:通訊部 100、100A:基板處理裝置 102:索引器 103:主搬運機器人 332:馬達 921:極值點檢測部 922:特徵向量抽出部 AR34、AR64:箭頭A BT11、BT12、BT13、BT14、BT21、BT22、BT23、BT24、BT31、BT32、BT33:按鍵 CX:旋轉軸線 DA1、DA2、DA3、DA4、DA5、DA6:顯示區域 DR、DR11、DR21、DR22、DR23、DR31:判定區域 K2:分類器 L1、L2:距離(極值點間距離) ST、ST1、ST2、ST3、STL:干涉紋 SW1:設定畫面 TP1:處理位置 W:基板 W1:(第一處理液的)液膜 1: Washing treatment unit 8: server 9, 9A: Control Department 10: Chamber 11: side wall 12: top wall 13: bottom wall 14: FFU 15: Zone divider 18: Exhaust duct 20: Rotation fixture 21: pedestal base 21a: Keep the face 22: Rotation motor 23: cover member 24: Rotation axis 25: Angular member 26: Fixture pin 28: Lower surface treatment liquid nozzle 30, 60, 65: nozzle 31: ejection head 32, 67: nozzle arm 33, 63, 68: nozzle abutment 40: Treatment hood 41: inner cover 42: middle cover 43: outer cover 43a, 52a: lower end 43b, 47b, 52b: upper end 43c, 52c: Turn-back part 44: bottom 45: inner wall 46: Outer wall 47: The first guide 48: middle wall 49: Abandoned Slot 50: Inside recovery slot 51: Outer recovery slot 52: The second guide 53: Treatment liquid separation wall 70: Camera 71: Lighting Department 80: Mechanical Learning Department 82, 82a, 82b, 82c, 82d: shooting images 91: Judgment area setting section 92, 92A: Timing decision unit 96: Memory Department 97: Display 98: Input section 99: Ministry of Communications 100, 100A: substrate processing equipment 102: Indexer 103: Main handling robot 332: Motor 921: Extremum Point Detection Department 922: Feature vector extraction part AR34, AR64: Arrow A BT11, BT12, BT13, BT14, BT21, BT22, BT23, BT24, BT31, BT32, BT33: keys CX: axis of rotation DA1, DA2, DA3, DA4, DA5, DA6: display area DR, DR11, DR21, DR22, DR23, DR31: judgment area K2: classifier L1, L2: distance (distance between extreme points) ST, ST1, ST2, ST3, STL: interference pattern SW1: Setting screen TP1: Processing location W: substrate W1: Liquid film (of the first treatment liquid)
圖1係顯示第一實施形態的基板處理裝置100的整體構成之圖。
圖2係第一實施形態的洗淨處理單元1的概略俯視圖。
圖3係第一實施形態的洗淨處理單元1的概略縱剖視圖。
圖4係顯示照相機70與屬於可動部的噴嘴30之間的位置關係之圖。
圖5係照相機70以及控制部9的方塊圖。
圖6係顯示基板處理裝置100的一個洗淨處理單元1中的基板處理的流程的一例之圖。
圖7係顯示從第一處理移行到第二處理的期間的各個時序中的拍攝影像82a、82b、82c、82d之圖。
圖8係顯示干涉紋ST的第一檢測模式之圖。
圖9係顯示干涉紋ST的第二檢測模式之圖。
圖10係顯示干涉紋ST的第三檢測模式之圖。
圖11係顯示用以決定第二處理開始時序之處理的流程之圖。
圖12係顯示用以設定檢測干涉紋ST之條件的設定畫面SW1之圖。
圖13係顯示第二實施形態的基板處理裝置100A之圖。FIG. 1 is a diagram showing the overall configuration of a
30:噴嘴 30: nozzle
82c:拍攝影像 82c: Shooting images
DR11:判定區域 DR11: Judgment area
ST:干涉紋 ST: interference pattern
W:基板 W: substrate
W1:(第一處理液的)液膜 W1: Liquid film (of the first treatment liquid)
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