JP6563762B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  Embodiments described herein relate generally to a substrate processing apparatus and a substrate processing method.

  In a manufacturing process for manufacturing a semiconductor or a liquid crystal panel, a processing liquid (for example, a cleaning liquid) is supplied to a processing surface of a substrate such as a wafer or a liquid crystal substrate, the processing surface is processed, and after the processing, the processing surface is dried. A substrate processing apparatus is used. In the drying process of the substrate processing apparatus, patterns such as memory cells and gates may collapse due to the spacing and structure between patterns, the surface tension of the processing liquid, and the like. This tendency becomes higher with the recent miniaturization accompanying higher integration and higher capacity of semiconductors.

  In order to suppress the above-mentioned pattern collapse, a substrate drying method using IPA (2-propanol: isopropyl alcohol) whose surface tension is smaller than that of ultrapure water has been proposed. In this substrate drying method, DIW (ultra pure water) on the substrate surface is replaced with a mixed solution of IPA and DIW to perform substrate drying.

JP 2008-34779 A

  However, the miniaturization of semiconductors is progressing more and more, and even when drying is performed using an organic solvent having high volatility such as IPA, the fine pattern of the wafer may collapse due to the surface tension of the liquid.

  For example, when the liquid is dried, the drying speed of the substrate surface becomes non-uniform, and if the liquid remains between some patterns, the pattern collapses due to the surface tension of the liquid in that part. Specifically, the patterns of the portions where the liquid remains are collapsed by elastic deformation due to the surface tension of the liquid, and the residue slightly dissolved in the liquid aggregates. When the liquid is completely vaporized, the fallen patterns are fixed to each other.

  The problem to be solved by the present invention is to provide a substrate processing apparatus and a substrate processing method capable of performing good substrate drying while suppressing collapse of a pattern.

  A substrate processing apparatus according to an embodiment includes a nozzle that supplies a liquid to a processing surface of a substrate, a liquid film thickness measurement unit that measures the thickness of a liquid film on the processing surface of the substrate to which the liquid is supplied, and a liquid Measured by a substrate heating unit that heats the substrate so that a gas layer is formed on the processing surface of the substrate to which the liquid is supplied and the liquid on the processing surface of the substrate is turned into a liquid ball, and a liquid film thickness measurement unit And a control unit that controls the substrate heating unit in accordance with the thickness of the liquid film.

  A substrate processing method according to an embodiment includes a step of supplying a liquid to a surface to be processed of a substrate, a step of measuring a thickness of a liquid film on the surface to be processed of the substrate to which the liquid is supplied, and a liquid film measured And heating the substrate so as to form a gas layer on the surface of the substrate to which the liquid is supplied in accordance with the thickness of the substrate, so that the liquid on the surface of the substrate to be processed becomes liquid droplets.

  According to the embodiment of the present invention, good substrate drying can be performed while suppressing collapse of the pattern.

It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a graph which shows the relationship between the processing time for every substrate rotation speed and liquid film thickness which concerns on 1st Embodiment. It is a graph which shows the relationship between the substrate peripheral speed and liquid film thickness which concern on 1st Embodiment. It is a figure which shows the threshold value information which sets a threshold value (threshold value) for every kind of process liquid which concerns on 1st Embodiment. It is a timing chart which shows the operation timing of the substrate processing process concerning a 1st embodiment. It is a figure which shows schematic structure of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows a part of schematic structure of the substrate processing apparatus which concerns on 3rd Embodiment. It is a figure which shows a part of schematic structure of the substrate processing apparatus which concerns on 4th Embodiment.

(First embodiment)
A first embodiment will be described with reference to FIGS. 1 to 5.

  As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment includes a processing chamber 11, a cup 12, a support portion 13, a rotation mechanism 14, a nozzle 15, and a first moving mechanism 16. The liquid film thickness measurement unit 17, the second moving mechanism 18, the substrate heating unit 19, and the control unit 20 are provided.

  The processing chamber 11 is a processing box for processing the substrate W. The processing chamber 11 is formed in a box shape such as a rectangular parallelepiped or a cube, for example, and includes a cup 12, a support portion 13, a rotation mechanism 14, a nozzle 15, a first moving mechanism 16, a liquid film thickness measurement portion 17, and a second. The moving mechanism 18 and the substrate heating unit 19 are accommodated.

  The cup 12 is provided in the approximate center in the processing chamber 11. The cup 12 is formed in a cylindrical shape so as to surround the support portion 13 from the periphery. The upper part of the peripheral wall of the cup 12 is inclined inward in the radial direction, and is opened so that the substrate W on the support portion 13 is exposed. The cup 12 receives the processing liquid scattered from the rotating substrate W and the processing liquid that has flowed down. A discharge port (not shown) for discharging the received processing liquid is formed on the bottom surface of the cup 12.

  The support portion 13 is positioned substantially at the center in the cup 12, and supports the substrate W in the cup 12 in a horizontal state by the plurality of support members 13a. The support portion 13 is provided so as to be rotatable in a horizontal plane, and is called a spin table, for example. The rotation axis of the support portion 13 is an axis that intersects the center of the surface to be processed of the substrate W on the support portion 13 (an example of an axis that intersects the surface to be processed of the substrate W).

  The rotation mechanism 14 is provided in the lower part of the support part 13, and is comprised so that the support part 13 may be rotated within a horizontal surface. For example, the rotation mechanism 14 includes a rotation shaft coupled to the center of the support portion 13 and a motor (none of which is not shown) that rotates the rotation shaft. The rotation mechanism 14 rotates the support portion 13 in a horizontal plane via a rotation shaft by driving a motor. The rotation mechanism 14 is electrically connected to the control unit 20, and its driving is controlled by the control unit 20.

  The nozzle 15 is positioned above the support portion 13 and is formed to be swingable by the first moving mechanism 16 along the surface to be processed of the substrate W on the support portion 13. The nozzle 15 supplies a processing liquid (for example, a cleaning liquid) toward the vicinity of the center of the target surface of the substrate W on the support unit 13. The nozzle 15 is supplied with a processing liquid from a reservoir outside the processing chamber 11 via a pipe (both not shown).

  The first moving mechanism 16 includes a movable arm 16a and a swing mechanism 16b. The movable arm 16a holds the nozzle 15 described above. The swing mechanism 16 b supports one end of the movable arm 16 a and swings the movable arm 16 a along the surface to be processed of the substrate W on the support portion 13. The first moving mechanism 16 is electrically connected to the control unit 20, and its driving is controlled by the control unit 20. For example, the first moving mechanism 16 has a liquid supply position in which the nozzle 15 faces the vicinity of the center of the surface of the substrate W to be processed on the support unit 13, and retracts from the liquid supply position to carry in and out the substrate W. Move to the standby position where it is possible.

  The liquid film thickness measurement unit 17 is positioned above the support unit 13 and is formed to be swingable by the second moving mechanism 18 along the surface to be processed of the substrate W on the support unit 13. The liquid film thickness measurement unit 17 measures the thickness of the liquid film formed on the surface to be processed of the substrate W on the support unit 13. The liquid film thickness measurement unit 17 is electrically connected to the control unit 20, and transmits the measured liquid film thickness value (liquid film thickness value) to the control unit 20. For example, a laser displacement meter or a camera can be used as the liquid film thickness measurement unit 17. Further, as the liquid film thickness measuring method, for example, the optical interference principle can be used. As another example, a weighing scale can be used in the support portion 13. When this weighing scale is used, the weight of the liquid film on the substrate W (the weight of the liquid film = the weight of the substrate including the liquid film−the weight of the substrate) is theoretically or experimentally determined based on the thickness of the liquid film. Convert.

  Similar to the first moving mechanism 16, the second moving mechanism 18 includes a movable arm 18a and a swinging mechanism 18b. The movable arm 18a holds the liquid film thickness measuring unit 17 described above. The swing mechanism 18 b supports one end of the movable arm 18 a and swings the movable arm 18 a along the surface to be processed of the substrate W on the support portion 13. The second moving mechanism 18 is electrically connected to the control unit 20, and its driving is controlled by the control unit 20. For example, the second moving mechanism 18 includes a measurement position where the liquid film thickness measurement unit 17 is opposed to the vicinity of the center between the center of the surface to be processed of the substrate W on the support unit 13 and the outer peripheral edge, and the measurement position. Retreat and move to a standby position where the substrate W can be carried in and out.

  The substrate heating unit 19 has a plurality of lamps 19a. These lamps 19a are straight tube lamps, and are provided above the support portion 13 so as to be parallel to each other in a horizontal state. The substrate heating unit 19 heats the substrate W on the support unit 13 in a non-contact manner. As the lamp 19a, for example, a halogen lamp or a far infrared lamp can be used. The substrate heating unit 19 is electrically connected to the control unit 20, and the driving thereof is controlled by the control unit 20.

  The control unit 20 includes an apparatus control unit 20a, a liquid film thickness analysis unit 20b, and a heating control unit 20c. The device control unit 20a is a main control unit. In addition, the liquid film thickness analysis unit 20 b analyzes the thickness of the liquid film measured by the liquid film thickness measurement unit 17. The heating control unit 20c controls the substrate heating unit 19 according to a command from the apparatus control unit 20a.

  The apparatus control unit 20a includes a microcomputer that centrally controls each unit and a storage unit (all not shown) that stores substrate processing information and various programs related to substrate processing. The apparatus control unit 20a controls the rotating mechanism 14, the first moving mechanism 16, the second moving mechanism 18 and the like based on the substrate processing information and various programs, and for example, rotates the substrate W or swings the nozzle 15. The operation of the liquid film thickness measuring unit 17 such as swinging is controlled.

  The liquid film thickness analyzing unit 20b compares the liquid film thickness (liquid film thickness value) measured by the liquid film thickness measuring unit 17 with the first predetermined value. Then, the liquid film thickness analysis unit 20b determines that the liquid film thickness is appropriate when it is determined that the liquid film thickness measured by the liquid film thickness measurement unit 17 is equal to or less than the first predetermined value. And the heating permission signal which permits heating is transmitted to the apparatus control part 20a. Upon receiving the heating permission signal, the apparatus control unit 20a transmits a heating command signal for instructing heating to the heating control unit 20c.

  When the heating control unit 20c receives a heating command signal from the apparatus control unit 20a, the heating control unit 20c performs heating of the substrate W on the support unit 13. The heating control unit 20c rapidly heats the substrate W to a temperature higher than the Leidenfrost temperature (temperature at which the Leidenfrost phenomenon occurs) so that the processing liquid (for example, cleaning liquid) on the surface to be processed of the substrate W becomes a liquid ball. The heating unit 19 is controlled. The substrate heating unit 19 is a heating unit capable of heating at least the surface to be processed of the substrate W to a temperature higher than the Leidenfrost temperature without contact (for example, within a range of several seconds to several tens of seconds).

  The aforementioned first predetermined value is a value for determining the heating start timing. When the thickness of the liquid film is thicker than the first predetermined value, if the substrate W is dried in that state, a streak-like watermark is generated on the surface to be processed of the substrate W, resulting in poor drying. When the processing liquid on the substrate W is heated rapidly by heating the substrate W, the number of liquid balls increases as the film thickness of the processing liquid increases. As the number of liquid balls increases, the number of contact points that come into contact with the surface to be processed of the substrate W increases until the liquid balls are discharged out of the surface to be processed due to the centrifugal force of the rotating substrate W. Since the surface to be processed of the substrate W is cooled by the heat of vaporization upon contact with the liquid balls, if the number of liquid balls increases too much, the surface of the substrate W to be processed is partially covered with Leiden even during rapid heating. A portion that is below the frost temperature, that is, a portion that is dried not by rapid drying but by normal drying occurs. In this case, for example, a trace of the movement of the liquid ball discharged out of the surface to be processed remains, and liquid stain such as a streak-like watermark occurs.

  Therefore, an upper limit value of the liquid film thickness that does not cause liquid stain is obtained in advance, and the upper limit value is set as the first predetermined value. Therefore, by starting the heating of the substrate W at the timing when the thickness of the liquid film becomes equal to or less than the first predetermined value, the number of liquid balls on the surface to be processed of the substrate W is made appropriate, and the occurrence of defective drying is suppressed. Can do.

Here, as shown in FIG. 2, regardless of the substrate rotation speed R ₁ [rpm], R ₂ [rpm] and R ₃ [rpm] (R ₁ <R ₂ <R ₃ ), the substrate W From the end of the liquid supply to the liquid film d, the liquid film thickness d decreases with time. This relationship (graph in FIG. 2) is experimentally obtained. If liquid film thickness d is greater than the first predetermined value d _B is occurs (d B _<d), streaky watermark drying failure. On the other hand, liquid film thickness d is greater than 0 (zero), if the first is less than the predetermined value d _B (0 <d ≦ d _B), without watermark occurs, poor drying does not occur. Therefore, the upper limit of the liquid film thickness that does not cause a liquid stain is a first predetermined value d _B, initiating the heating of the substrate W at a timing where the thickness of the liquid film becomes less than the first predetermined value d _B Is important.

  In addition, as shown in FIG. 3, the liquid film thickness d decreases as the substrate peripheral speed increases. This relationship (graph in FIG. 3) is experimentally obtained. In FIG. 3, only the substrate peripheral speed is changed, and the processing time and the liquid film thickness measurement position are constant. When the liquid film thickness d is larger than 320 μm, a streak-like watermark is generated, resulting in poor drying. On the other hand, when the liquid film thickness d is 320 μm or less, a watermark does not occur, and a dry defect does not occur.

Thus, from the graph shown in FIG. 3, the first predetermined value _{d B,} for example, when the pattern height (or pattern depth) and _{d P, 0 <d P <} d B ≦ 320μm of holds as equation Set to If the first is less than or equal to 320μm predetermined value d _B, since the number of the liquid ball on the processed surface of the substrate W as described above is suitable, it is possible to suppress the occurrence of drying defects such as streaky watermark it can. Further, the first predetermined value d _B is larger than the pattern height d _P, until the substrate W is heated, the thickness of the liquid film on the target surface of the substrate W is thinner than the pattern height d _P It is prevented. As a result, it is possible to suppress the pattern from being exposed from the liquid film and partially drying, so that uneven drying on the surface to be processed of the substrate W can be suppressed and occurrence of poor drying can be suppressed. .

  The liquid film thickness analysis unit 20b has threshold information (for example, a table) that determines a threshold value (threshold value) for each type of treatment liquid, as shown in FIG. 4, for example. The threshold value for each type of treatment liquid is experimentally obtained in advance. The liquid film thickness analysis unit 20b selects a threshold corresponding to the type of processing liquid supplied from the nozzle 15 from the thresholds for each type of processing liquid in the threshold information, and uses the threshold as the first predetermined value. When the type of the processing liquid is A, the threshold value a is set as the first predetermined value, and when the type of the processing liquid is B, the threshold value b is set as the first predetermined value. When the type of processing liquid is C, the threshold value c is set as the first predetermined value.

  As described above, an appropriate threshold value can be used as the first predetermined value according to the type of the processing liquid. Thereby, even if the kind of processing liquid changes, generation | occurrence | production of defective drying, such as a streak-like watermark, can be suppressed reliably. For example, the type of processing liquid to be used is determined according to a user input operation on an input unit (not shown). When the type of the processing liquid is determined, a threshold value corresponding to the determined type is selected from the threshold value information, and is automatically set as the first predetermined value.

  Next, substrate processing (substrate processing method) performed by the above-described substrate processing apparatus 10 will be described with reference to FIG. In addition, the substrate W is placed on the support portion 13, and a cleaning process after each process (for example, an organic substance removing process and a reattachment preventing process) is performed on the substrate W will be described.

  As shown in FIG. 5, in the cleaning process after each process, at the process start timing T1, the support unit 13, that is, the substrate W starts to rotate by the rotation mechanism 14 (substrate rotation). After a predetermined time from the processing start timing T1, at a liquid supply start timing T2, a cleaning liquid (for example, pure water or carbonated water) starts to be supplied from the nozzle 15 to the approximate center of the target surface of the substrate W on the support unit 13 (cleaning liquid supply). ). The supplied cleaning liquid spreads over the entire surface to be processed of the substrate W due to the centrifugal force generated by the rotation of the substrate W. As a result, a liquid film is formed on the surface to be processed of the substrate W on the support portion 13, and the surface to be processed is covered with the cleaning liquid and processed.

The thickness of the liquid film on the surface to be processed is measured by the liquid film thickness measuring unit 17. The thickness of the liquid film (liquid film thickness value) suddenly increases to d ₀ when the liquid supply is started, and thereafter is kept constant at d ₀ . Even before the liquid supply, the liquid used in the pretreatment remains after forming a liquid film on the surface to be processed of the substrate W, so that the liquid film thickness is 0 (before the liquid supply start timing T2). Not zero). Usually, when the surface to be processed of the substrate W is naturally dried before the heat treatment step, the drying on the surface to be processed becomes non-uniform, and a drying defect such as a watermark occurs. For this reason, the to-be-processed surface of the board | substrate W is wet until a heat processing process also between each process, and generation | occurrence | production of defective drying is suppressed.

  Thereafter, when a predetermined cleaning processing time has elapsed from the liquid supply start timing T2, the supply of the cleaning liquid is stopped at the liquid supply end timing T3. At this time, the number of rotations of the substrate W is kept constant, and the cleaning liquid on the surface to be processed of the substrate W flows down from the processing surface due to the centrifugal force generated by the rotation of the substrate W, and the thickness of the liquid film gradually increases from d0. Decrease. At the heating start timing T4 when the thickness of the liquid film becomes equal to or less than the first predetermined value dB, the substrate heating unit 19 starts heating the substrate W on the support unit 13 (substrate heating). Thereafter, when a predetermined heat treatment time elapses from the heating start timing T4, the heating of the substrate W is stopped at the heating end timing T5. Finally, after a predetermined time from the heating end timing T5, the rotation of the support portion 13, that is, the rotation of the substrate W is stopped at the processing end timing T6.

  In the above heat treatment, the liquid is vaporized from the periphery of the pattern on the surface to be processed of the substrate W by the heating by the substrate heating unit 19, so that the substrate surface is instantly dried. At this time, the substrate heating unit 19 instantaneously heats only the substrate W so as to form a gas layer on the surface of the substrate W to which the liquid is supplied so as to turn the liquid into liquid droplets (generate liquid droplets). To do. When the substrate W is instantaneously heated by the substrate heating unit 19, the liquid in contact with the pattern on the surface to be processed of the substrate W starts to vaporize earlier than the liquid in other portions. Thereby, a gas layer, that is, a gas layer is generated like a thin film around the pattern on the surface to be processed of the substrate W by vaporization of the liquid. For this reason, the liquid between adjacent patterns is pushed out from between patterns by a gas layer, and drying advances.

  Therefore, as described above, by instantaneously heating the substrate W, the liquid in contact with the pattern on the surface to be processed of the substrate W is instantaneously vaporized, and the liquid in other parts on the surface to be processed immediately Liquid droplets (liquid droplets phenomenon). Each liquid ball on the surface to be processed is blown off from the substrate W by the centrifugal force generated by the rotation of the substrate W, and the substrate W is rapidly dried. In this way, it is possible to suppress the liquid from remaining between some patterns, and the drying speed of the liquid on the surface to be processed of the substrate W becomes uniform. The pattern can be prevented from collapsing due to tension. Furthermore, since the substrate W is heated based on the thickness of the liquid film on the surface to be processed of the substrate W, the number of liquid balls on the surface to be processed of the substrate W can be adjusted. The occurrence of poor drying such as can be suppressed.

  On the other hand, when drying is performed without using the substrate heating unit 19, the liquid drying speed becomes uneven in the process of drying, and the liquid remains between some patterns, and the portion The pattern collapses due to the collapse force of the liquid. For example, one width of the pattern is 20 nm and the height is 200 nm (the height is 10 times the width). Thus, the pattern is a fine pattern, and the liquid that has entered the gap between the patterns is difficult to dry. For this reason, even after other portions are dried, liquid remains between some patterns, and the pattern may collapse due to the collapse force of the liquid.

  As described above, according to the first embodiment, a gas layer (gas layer) is formed on the surface to be processed of the substrate W supplied with the liquid, and the liquid on the surface to be processed of the substrate W is liquid-dropped. The substrate W is heated by the substrate heating unit 19 so as to make it appear. Thereby, vaporization can be advanced from the liquid which contacts the pattern on the to-be-processed surface of the substrate W. The surface of the substrate W can be instantly dried without leaving a liquid between the patterns by the gas layer generated at this time. As described above, it is possible to suppress the liquid from remaining between the patterns and to suppress the pattern collapse due to the remaining liquid. Therefore, it is possible to perform good substrate drying while suppressing the pattern collapse.

  Further, the thickness of the liquid film on the surface to be processed of the substrate W is measured by the liquid film thickness measuring unit 17, and the substrate heating unit 19 is controlled by the control unit 20 in accordance with the thickness of the liquid film. Thereby, since the substrate W is heated based on the thickness of the liquid film, the number of liquid balls on the surface to be processed of the substrate W can be adjusted, and liquid stains (for example, streak-like watermarks) can be adjusted. Occurrence of poor drying can be suppressed. For example, the substrate W is heated by the substrate heating unit 19 when the thickness of the liquid film on the surface to be processed of the substrate W is appropriate at a first predetermined value or less. Thereby, it is possible to suppress the number of liquid balls that increases as the liquid film thickness increases. Therefore, generation | occurrence | production of a liquid stain can be suppressed and drying defect can be suppressed. That is, it is possible to achieve uniform drying without causing liquid stain, and to perform good substrate drying while suppressing pattern collapse.

(Second Embodiment)
A second embodiment will be described with reference to FIG. In the second embodiment, differences (processing chamber, transfer chamber, and heating chamber) from the first embodiment will be described, and other descriptions will be omitted.

  As shown in FIG. 6, in the second embodiment, a processing chamber 11A, a transfer chamber 11B, and a heating chamber 11C are provided. The processing chamber 11A is a room for performing processing (for example, cleaning processing). The transfer chamber 11B is a chamber for transferring the substrate W from the processing chamber 11A to the heating chamber 11C. The heating chamber 11C is a room for performing heat treatment. As described above, in the second embodiment, the cleaning process and the heating process are performed in different rooms.

  The processing chamber 11A is provided with a cup 12, a support portion 13, a rotating mechanism 14, a nozzle 15 and a first moving mechanism 16 according to the first embodiment. In the processing chamber 11A, a processing liquid (for example, a cleaning liquid) is supplied from the nozzle 15 to the surface to be processed of the substrate W on the support unit 13, and the substrate processing is performed as in the first embodiment. After the substrate processing, the substrate W is transferred from the processing chamber 11A to the heating chamber 11C through the transfer chamber 11B in a state where the liquid film is formed on the processing surface of the substrate W.

  In the transfer chamber 11B, two gates (doors) 31 and a handling device (an example of a transfer unit) 32 are provided. Each gate 31 is individually arranged on the processing chamber 11A side and the heating chamber 11C side. These gates 31 are formed to be slidable. One gate 31 functions as a door for connecting the processing chamber 11A and the transfer chamber 11B, and the other gate 31 functions as a door for connecting the transfer chamber 11B and the heating chamber 11C. The handling device 32 carries the processed substrate W out of the processing chamber 11A through the gate 31 on the processing chamber 11A side, and loads it into the heating chamber 11C through the gate 31 on the heating chamber 11C side.

  In the heating chamber 11C, the support unit 13, the rotation mechanism 14, the nozzle 15, the first moving mechanism 16, the liquid film thickness measuring unit 17, the second moving mechanism 18, and the substrate heating unit 19 according to the first embodiment are provided. Is provided. The nozzle 15 in the heating chamber 11C is used according to the thickness of the liquid film on the surface to be processed of the substrate W. For example, while the substrate W is being transferred from the processing chamber 11A to the heating chamber 11C via the transfer chamber 11B, the thickness of the liquid film on the processing target surface of the substrate W may be reduced due to vibration caused by transfer. When the thickness of the liquid film on the surface to be processed of the substrate W becomes too thin, the nozzle 15 in the heating chamber 11C is provided with a support portion in order to increase the thickness of the liquid film on the surface to be processed of the substrate W. The control unit 20 controls the surface of the substrate W on the substrate 13 to be replenished with the processing liquid.

  Specifically, the substrate heating unit 19 performs the substrate W from the completion of the placement of the substrate W in the heating chamber 11C to the start of substrate rotation (see processing start timing T1 in FIG. 5), that is, during the replenishment period. The liquid film thickness measured by the liquid film thickness measuring unit 17 and the second predetermined value smaller than the first predetermined value are compared by the liquid film thickness analyzing unit 20b in a state where the heating is limited. . When it is determined that the thickness of the liquid film measured by the liquid film thickness measurement unit 17 is equal to or less than the second predetermined value, the nozzle 15 in the heating chamber 11C is instructed to supply the liquid. For example, if the thickness of the liquid film becomes less than the second predetermined value and becomes too thin, the surface to be processed of the substrate W may start to partially dry, and finally a drying defect such as liquid stain occurs. There is a case. For this reason, when the thickness of the liquid film becomes equal to or smaller than the second predetermined value, the processing liquid is supplied from the nozzle 15 in the heating chamber 11C to the surface to be processed of the substrate W by a predetermined amount (predetermined time). The thickness of the film is made greater than the second predetermined value. The substrate processing according to the first embodiment is started in a state where the thickness of the liquid film is thicker than the second predetermined value. Although the substrate W is stopped without rotating when the processing liquid is replenished, the present invention is not limited to this, and the substrate W may be rotated.

  As described above, according to the second embodiment, the same effect as that of the first embodiment can be obtained. Further, during the replenishment period, the liquid film on the surface to be processed of the substrate W is supplied by supplying the liquid to the nozzle 15 in the heating chamber 11C according to the thickness of the liquid film measured by the liquid film thickness measuring unit 17. It becomes possible to adjust the thickness. As a result, the number of liquid balls on the surface to be processed of the substrate W can be adjusted. As a result, uneven drying on the surface to be processed of the substrate W is suppressed, and good substrate drying is ensured while suppressing pattern collapse. Can be done.

  Further, during the replenishment period, the thickness of the liquid film measured by the liquid film thickness measurement unit 17 is compared with a second predetermined value smaller than the first predetermined value and measured by the liquid film thickness measurement unit 17. When it is determined that the thickness of the liquid film is equal to or less than the second predetermined value, the liquid is supplied from the nozzle 15 in the heating chamber 11C. Thereby, the thickness of the liquid film is maintained to be thicker than the second predetermined value, the thickness of the liquid film becomes less than the second predetermined value and becomes too thin, and the surface to be processed of the substrate W is partially dried. It becomes possible to suppress starting. Thereby, generation | occurrence | production of poor drying, such as a liquid stain, can be suppressed reliably.

(Third embodiment)
A third embodiment will be described with reference to FIG. In the third embodiment, differences (liquid film heating unit) from the first embodiment will be described, and other descriptions will be omitted.

  As shown in FIG. 7, in the third embodiment, a liquid film heating unit 41 is provided. The liquid film heating unit 41 is disposed in the support unit 13 and heats the rotating substrate W to heat the liquid film on the surface to be processed of the substrate W. As the liquid film heating unit 41, for example, a heater or a lamp can be used. The liquid film heating unit 41 is electrically connected to the control unit 20, and its driving is controlled by the control unit 20.

  The controller 20 heats the liquid on the surface to be processed of the substrate W according to the thickness of the liquid film measured by the liquid film thickness measuring unit 17 before the heat treatment process for heating the substrate W. The liquid film heating unit 41 is controlled so as to promote the evaporation of the liquid on the surface to be processed and adjust the thickness of the liquid film. For example, the thickness of the liquid film on the surface to be processed of the substrate W is reduced before the heat treatment step, and can be brought close to the first predetermined value in a short time. As described above, the heating by the liquid film heating unit 41 is heating for shortening the time during which the thickness of the liquid film on the surface to be processed of the substrate W becomes the first predetermined value. Accordingly, when the thickness of the liquid film reaches the first predetermined value, heating by the substrate heating unit 19 is started. The heating temperature, the heating time, etc. are obtained in advance by experiments. The heating temperature is below the boiling point of the liquid. The heating time is a time that does not dry the liquid on the surface to be processed of the substrate W. The heating start timing by the liquid film heating unit 41 is preferably before the substrate W is transported.

  As described above, according to the third embodiment, the same effect as that of the first embodiment can be obtained. Furthermore, by providing the liquid film heating unit 41, it is possible to adjust the thickness of the liquid film on the surface to be processed of the substrate W by heating the liquid film. As a result, the number of liquid balls on the surface to be processed of the substrate W can be adjusted. As a result, uneven drying on the surface to be processed of the substrate W is suppressed, and good substrate drying is ensured while suppressing pattern collapse. Can be done.

(Fourth embodiment)
A fourth embodiment will be described with reference to FIG. In the fourth embodiment, the difference (gas blowing unit) from the first embodiment will be described, and the other description will be omitted.

  As shown in FIG. 8, in the fourth embodiment, a gas blowing unit 51 and a third moving mechanism 52 are provided. The gas spray unit 51 is disposed above the support unit 13. For example, a gas (for example, nitrogen or the like) is directed from the slit-shaped spray port toward the target surface of the substrate W on the rotating support unit 13. Spray active gas). The gas blowing unit 51 is electrically connected to the control unit 20, and its driving is controlled by the control unit 20.

  The third moving mechanism 52 includes a movable arm 52a and a swing mechanism 52b. The movable arm 52a holds the gas blowing part 51 described above. The swing mechanism 52 b supports one end of the movable arm 52 a and swings the movable arm 52 a along the surface to be processed of the substrate W on the support portion 13. The third moving mechanism 52 is electrically connected to the control unit 20, and its driving is controlled by the control unit 20.

  The control unit 20 swings the gas blowing unit 51 by the third moving mechanism 52 according to the thickness of the liquid film measured by the liquid film thickness measuring unit 17 before the heat treatment process for heating the substrate W. Then, the gas spray unit 51 is controlled so as to adjust the thickness of the liquid film on the processing surface of the substrate W by spraying a gas onto the liquid film on the processing surface of the substrate W. For example, the thickness of the liquid film on the surface to be processed of the substrate W is reduced before the heat treatment step, and can be brought close to the first predetermined value in a short time. Thus, the gas spraying by the gas spraying part 51 is for shortening the time during which the thickness of the liquid film on the surface to be processed of the substrate W becomes the first predetermined value. Accordingly, when the thickness of the liquid film reaches the first predetermined value, heating by the substrate heating unit 19 is started. In addition, the amount of spraying, the spraying time, etc. are previously calculated | required by experiment.

  As described above, according to the fourth embodiment, the same effect as that of the first embodiment can be obtained. Furthermore, by providing the gas spraying part 51, it becomes possible to adjust the thickness of the liquid film on the surface to be processed of the substrate W by gas spraying. As a result, the number of liquid balls on the surface to be processed of the substrate W can be adjusted. As a result, uneven drying on the surface to be processed of the substrate W is suppressed, and good substrate drying is ensured while suppressing pattern collapse. Can be done.

(Other embodiments)
In each of the above-described embodiments, the lamp 19a is used as an example of the substrate heating unit 19. However, the present invention is not limited to this. For example, a heater such as an IH (induction heating) heater can be used. is there. Further, the shape of the lamp 19a is not limited to the straight tube shape, and various shapes such as a round shape and a spherical shape can be employed. The lamp 19a and the IH heater are both heaters that heat the substrate W with electromagnetic waves (light is also included in the electromagnetic waves).

  In the above-described second embodiment, as an example, the nozzle 15 and the first moving mechanism 16 are provided in the heating chamber 11C. However, the present invention is not limited to this. For example, in the case where the thickness of the liquid film on the surface to be processed of the substrate W is not reduced by vibration due to the transfer while the substrate W is being transferred from the processing chamber 11A to the heating chamber 11C via the transfer chamber 11B, It is also possible to remove the nozzle 15 and the first moving mechanism 16. In this case, simplification of the apparatus can be realized. In addition, before unloading the substrate W from the processing chamber 11A, in order to compensate for the amount by which the thickness of the liquid film on the surface to be processed of the substrate W is reduced by the vibration due to transport, the substrate W is supported from the nozzle 15 in the processing chamber 11A. A large amount of cleaning liquid is supplied to the surface of the substrate W to be processed on the unit 13, and the thickness of the liquid film on the surface of the substrate W to be processed is previously increased more than necessary (at least a second predetermined value). Is also possible.

  In the third or fourth embodiment described above, as an example, the thickness of the liquid film on the surface to be processed of the substrate W is adjusted using the liquid film heating unit 41 or the gas blowing unit 51. For example, the thickness of the liquid film on the surface to be processed of the substrate W can be adjusted by rotating the substrate W by the rotation mechanism 14 or the like. When the rotation mechanism 14 is used, for example, the thickness of the liquid film on the surface to be processed of the substrate W is adjusted by the rotation of the substrate W according to the thickness of the liquid film measured by the liquid film thickness measurement unit 17. Thus, the rotation mechanism 14 is controlled by the control unit 20.

  As mentioned above, although some embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 13 Support part 14 Rotating mechanism 15 Nozzle 17 Liquid film thickness measuring part 19 Substrate heating part 20 Control part 41 Liquid film heating part 51 Gas spraying part W Substrate

Claims (16)

A nozzle for supplying liquid to the surface to be processed of the substrate;
A liquid film thickness measurement unit for measuring the thickness of the liquid film on the surface of the substrate to which the liquid is supplied;
A substrate heating unit that heats the substrate so as to create a gas layer on the surface to be processed of the substrate to which the liquid is supplied and to liquefy the liquid on the surface to be processed of the substrate;
A control unit for controlling the substrate heating unit according to the thickness of the liquid film measured by the liquid film thickness measurement unit;
A substrate processing apparatus comprising:   The control unit compares the thickness of the liquid film measured by the liquid film thickness measurement unit with a first predetermined value, and the thickness of the liquid film measured by the liquid film thickness measurement unit is the first value. 2. The substrate processing apparatus according to claim 1, wherein when it is determined that the value is equal to or less than a predetermined value of 1, the substrate heating unit heats the substrate.   The control unit has a threshold value for each liquid type, selects a threshold value corresponding to the liquid type from the threshold values for each liquid type, and uses the threshold value as the first predetermined value. 2. The substrate processing apparatus according to 1.   The said control part makes the said nozzle supply the said liquid according to the thickness of the said liquid film measured by the said liquid film thickness measurement part, It is any one of Claim 1 to 3 characterized by the above-mentioned. Substrate processing equipment. The control unit limits heating of the substrate by the substrate heating unit, the thickness of the liquid film measured by the liquid film thickness measurement unit, and a second predetermined value smaller than the first predetermined value, When the liquid film thickness measured by the liquid film thickness measurement unit is determined to be less than or equal to the second predetermined value, the liquid is supplied to the nozzle. The substrate processing apparatus of Claim 2 or Claim 3 . A liquid film heating unit for heating the liquid film on the surface to be processed of the substrate;
The said control part controls the said liquid film heating part according to the thickness of the said liquid film measured by the said liquid film thickness measurement part, It is any one of Claim 1 to 5 characterized by the above-mentioned. Substrate processing equipment. A gas spraying unit for spraying a gas onto a liquid film on the surface to be processed of the substrate;
The said control part controls the said gas spraying part according to the thickness of the said liquid film measured by the said liquid film thickness measurement part, The board | substrate as described in any one of Claim 1 to 6 characterized by the above-mentioned. Processing equipment. A support for supporting the substrate;
A rotation mechanism that rotates the support portion about an axis that intersects the surface to be processed of the substrate as a rotation axis;
With
The substrate processing according to claim 1, wherein the control unit controls the rotation mechanism according to the thickness of the liquid film measured by the liquid film thickness measurement unit. apparatus. Supplying liquid to the surface to be processed of the substrate;
Measuring the thickness of the liquid film on the surface of the substrate to which the liquid is supplied;
In accordance with the measured thickness of the liquid film, an air layer is formed on the surface to be processed of the substrate to which the liquid is supplied, so that the liquid on the surface to be processed of the substrate is turned into a liquid ball. Heating the
A substrate processing method comprising: In the step of heating the substrate, when the measured thickness of the liquid film is compared with a first predetermined value, and the measured thickness of the liquid film is determined to be less than or equal to the first predetermined value The substrate processing method according to claim 9, wherein the substrate is heated.   The step of heating the substrate has a threshold value for each liquid type, selects a threshold value according to the liquid type from the threshold value for each liquid type, and uses the threshold value as the first predetermined value. The substrate processing method according to claim 10.   Before the step of heating the substrate, the liquid is supplied to the surface to be processed of the substrate according to the measured thickness of the liquid film, and the thickness of the liquid film on the surface to be processed of the substrate is adjusted. The substrate processing method according to claim 9, further comprising a step. The measured thickness of the liquid film is compared with a second predetermined value that is smaller than the first predetermined value, and it is determined that the measured thickness of the liquid film is equal to or less than the second predetermined value. The substrate processing method according to claim 10 , wherein the liquid is supplied in the case.   Before the step of heating the substrate, the liquid film on the processing surface of the substrate is heated according to the measured thickness of the liquid film, and the thickness of the liquid film on the processing surface of the substrate is adjusted. The substrate processing method according to claim 9, further comprising a step of:   Before the step of heating the substrate, a gas is blown onto the liquid film on the surface to be processed of the substrate according to the measured thickness of the liquid film, and the thickness of the liquid film on the surface to be processed of the substrate is determined. The substrate processing method according to claim 9, further comprising an adjusting step.   Before the step of heating the substrate, according to the measured thickness of the liquid film, the substrate is rotated about an axis that intersects the surface to be processed of the substrate as a rotation axis, and the liquid film on the surface to be processed of the substrate The substrate processing method according to claim 9, further comprising a step of adjusting the thickness of the substrate.

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