JP2015185806A - substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To excellently dry a substrate surface while suppressing or preventing pattern collapse.SOLUTION: The substrate processing apparatus includes: a heater that, by heating a substrate W held on a hot plate at a temperature equal to or higher than a boiling point of a process liquid in a state where the whole top face area of the substrate W is covered by a liquid film of the process liquid, causes the process liquid to evaporate and forms a gas phase between the liquid film of the process liquid and a top face of the substrate W; and a control device that controls a plurality of heaters. The control device includes: an information acceptance part to which substrate information containing a surface state of the substrate is input; and a temperature setting part that sets temperatures of a plurality of heaters for each heater on the basis of the substrate information input to the information acceptance part.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device, the surface of a substrate such as a semiconductor wafer is processed with a processing liquid. A single-wafer type substrate processing apparatus that processes substrates one by one supplies a processing liquid to a spin chuck that rotates the substrate while holding the substrate substantially horizontal, and a surface of the substrate that is rotated by the spin chuck. And a nozzle for the purpose.
A chemical is supplied to the substrate held by the spin chuck. Thereafter, a rinse liquid is supplied to the substrate. Thereby, the chemical | medical solution on a board | substrate is substituted by the rinse liquid. Thereafter, a spin dry process for removing the rinse liquid on the substrate is performed. In the spin dry process, when the substrate is rotated at a high speed, the rinse liquid adhering to the substrate is shaken off and removed (dried).

  In such a spin dry process, the rinsing liquid that has entered the pattern formed on the substrate cannot be sufficiently removed, resulting in poor drying. Therefore, as described in, for example, Patent Document 1, an organic solvent liquid such as isopropyl alcohol (IPA) liquid is supplied to the surface of the substrate after the rinsing process, and the rinsing enters the pattern. A technique for replacing the liquid with an organic solvent liquid and drying the surface of the substrate has been proposed.

JP-A-9-38595

As shown in FIG. 21, in a spin dry process in which a substrate is dried by high-speed rotation of the substrate, a liquid level (gas-liquid interface) is formed in the pattern. The surface tension acts on the contact position (gas / liquid / solid interface) between the liquid surface and the pattern. Surface tension is one of the causes of pattern collapse.
When the organic solvent liquid is supplied to the substrate before the spin-drying process as in Patent Document 1, since the organic solvent liquid having a low surface tension exists between the patterns, the force applied to the pattern when the substrate is dried As a result, the pattern collapse can be prevented.

  However, in recent years, for high integration, fine and high aspect ratio fine patterns (convex patterns, line patterns, etc.) are formed on the surface of the substrate. Since the fine pattern with a high aspect ratio is low in strength, there is a possibility that such collapse of the fine pattern cannot be sufficiently suppressed only by supplying an organic solvent liquid to the surface of the substrate before the spin drying process.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus that can satisfactorily dry the surface of a substrate while suppressing or preventing pattern collapse.

  In order to achieve the above object, the invention according to claim 1 is directed to a substrate holding means for horizontally holding the substrate, and a processing liquid is supplied to the upper surface of the substrate held by the substrate holding means, thereby A processing liquid supply means for forming a liquid film of a processing liquid covering the entire upper surface; and a plurality of heaters for heating the entire upper surface of the substrate held by the substrate holding means at independent temperatures. By heating the substrate being held at a temperature equal to or higher than the boiling point of the processing liquid in a state where the entire upper surface of the substrate is covered with the processing liquid film, the processing liquid is evaporated and the processing liquid film Heating means for forming a gas phase between the substrate and the upper surface of the substrate, and a substrate held by the substrate holding means in a state where the gas phase is interposed between the liquid film of the processing solution and the upper surface of the substrate By moving the liquid film of the treatment liquid against For each heater based on the substrate information input to the information receiving unit, a liquid film removing unit for removing the liquid film of the processing liquid from the substrate, an information receiving unit to which the substrate information including the surface state of the substrate is input A temperature setting unit for setting the temperature of the plurality of heaters, and the substrate held by the substrate holding means, in a state where the entire upper surface of the substrate is covered with a liquid film of the processing solution, A control device that performs a uniform heating step of evaporating the processing liquid by uniformly heating at the above temperature to form a gas phase between the liquid film of the processing liquid and the upper surface of the substrate, It is a processing device. When the pattern is formed on the upper surface of the substrate, the upper surface of the substrate includes the upper surface of a base material (for example, a silicon wafer) and the surface of the pattern.

  According to this configuration, the processing liquid is supplied to the upper surface of the substrate held horizontally, and a liquid film of the processing liquid covering the entire upper surface of the substrate is formed. Thereafter, the substrate is heated at a temperature equal to or higher than the boiling point of the processing liquid, and the temperature of the substrate reaches a value equal to or higher than the boiling point of the processing liquid. As a result, the processing liquid evaporates at the interface between the processing liquid and the upper surface of the substrate, and a gas phase is formed between the liquid film of the processing liquid and the upper surface of the substrate. At this time, since the liquid film of the processing liquid floats from the upper surface of the substrate, the frictional resistance acting on the liquid film of the processing liquid on the substrate is small enough to be regarded as zero. For this reason, the liquid film of the processing liquid is in a state of being easily slid along the upper surface of the substrate. The liquid film removing means removes the liquid film of the processing liquid that has floated from the upper surface of the substrate.

  In the spin dry process of drying the substrate by high-speed rotation, a liquid surface (gas-liquid interface) straddling two adjacent structures is formed. The surface tension that collapses the pattern acts on the contact position (gas, liquid, and solid interface) between the liquid surface and the pattern. In contrast, in the present invention, since the temperature of the substrate is equal to or higher than the boiling point of the processing liquid, even if the processing liquid comes into contact with the upper surface of the substrate, the liquid evaporates immediately. Therefore, the liquid level as in the spin drying process is not formed, and the surface tension that collapses the pattern is not applied to the pattern. Therefore, occurrence of pattern collapse can be reduced.

  Furthermore, when the liquid film is evaporated on the substrate, defects such as watermarks and particles may occur. On the other hand, in the present invention, the liquid film is eliminated by moving it with respect to the substrate. Therefore, the generation of watermarks and particles can be reduced. In particular, a gas phase is interposed between the liquid film of the processing liquid and the upper surface of the substrate, and the liquid film of the processing liquid is easily slipped along the upper surface of the substrate. it can. Accordingly, the time during which the upper surface of the substrate is partially exposed from the liquid film of the processing liquid can be reduced, so that more uniform processing can be performed on the substrate.

  The temperature setting unit of the control device sets the temperature of the plurality of heaters for each heater based on the substrate information input to the information receiving unit of the control device. More specifically, the temperature setting unit sets the temperature of the plurality of heaters for each heater based on at least one of the shape of the pattern, the size of the pattern, and the material of the pattern. For example, when the aspect ratio of the pattern formed on the upper surface peripheral portion of the substrate is relatively large, a plurality of control devices are provided so that the upper surface peripheral portion of the substrate is heated at a temperature higher than the central portion of the upper surface of the substrate. Set the heater temperature. Accordingly, since the liquid film of the processing liquid on the substrate can be heated uniformly regardless of the surface state of the substrate, the gas phase interposed between the liquid film of the processing liquid and the upper surface of the substrate is changed to the upper surface of the substrate. Can be formed over the entire area.

The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the substrate information includes at least one of a pattern shape, a pattern size, and a pattern material.
According to a third aspect of the present invention, the liquid film removing means is disposed on the substrate held by the substrate holding means in a state where a gas phase is interposed between the liquid film of the processing liquid and the upper surface of the substrate. A guide member that includes an outer guide surface that contacts a peripheral portion of the liquid film of the processing liquid, and guides the processing liquid from the upper surface of the substrate to the periphery of the substrate by contact between the outer guide surface and the liquid film of the processing liquid. It is a substrate processing apparatus of Claim 1 or 2 containing.

  According to this configuration, the outer guide surface of the guide member contacts the peripheral portion of the liquid film of the processing liquid on the substrate in a state where the gas phase is interposed between the liquid film of the processing liquid and the upper surface of the substrate. To do. The processing liquid that has contacted the outer guide surface is discharged to the periphery of the substrate through the guide member. As a result of the contact between the guide member and the liquid film, an outward flow toward the peripheral edge of the substrate is formed in the liquid film of the processing liquid. Therefore, the liquid film of the processing liquid on the substrate is removed from the substrate as a lump without being broken into a large number of droplets by this flow. Thereby, the liquid film of the processing liquid can be quickly removed from the substrate in a short time.

According to a fourth aspect of the present invention, the liquid film removing means includes a substrate that is held by the substrate holding means in a state where a gas phase is formed between the liquid film of the processing liquid and the upper surface of the substrate. 4. The gas discharge unit according to claim 1, further comprising a gas discharge unit that discharges a gas toward the upper surface to form a dry region from which the processing liquid has been removed in a partial region of the upper surface of the substrate. A substrate processing apparatus.
According to this configuration, the gas is blown to the blowing position, which is a partial region of the upper surface of the substrate, in a state where a gas phase is formed between the liquid film of the processing liquid and the upper surface of the substrate. The treatment liquid in the spray position is pushed away to the surroundings by supplying gas. Thereby, a dry region is formed at the spray position. Furthermore, since the processing liquid moves from the spray position to the periphery by supplying gas, an outward flow toward the peripheral edge of the substrate is formed in the liquid film of the processing liquid. Therefore, the liquid film of the processing liquid on the substrate is removed from the substrate as a lump without being broken into a large number of droplets by this flow. Thereby, the liquid film of the processing liquid can be quickly removed from the substrate in a short time.

According to a fifth aspect of the present invention, in the state in which the control device has a gas phase formed between the liquid film of the processing liquid and the upper surface of the substrate after the uniform heating step, 5. The substrate processing apparatus according to claim 1, further executing a temperature difference generating step of forming a low temperature region and a high temperature region higher in temperature than the low temperature region on an upper surface of the substrate.
According to this configuration, the substrate is uniformly heated at a temperature equal to or higher than the boiling point of the processing liquid. Thereby, a gas phase is formed between the liquid film of the processing liquid and the upper surface of the substrate. Thereafter, a high temperature region and a low temperature region having different temperatures are formed on the upper surface of the substrate. Therefore, a temperature difference is generated in the liquid film of the processing liquid, and a flow moving toward the lower temperature is formed in the liquid film of the processing liquid. Therefore, the liquid film of the processing liquid on the substrate is removed from the substrate as a lump without being broken into a large number of droplets by this flow. Thereby, the liquid film of the processing liquid can be quickly removed from the substrate in a short time.

The invention according to claim 6 is characterized in that the liquid film removing means maintains the distance between the heating means and the substrate constant, and tilts the substrate held horizontally by the substrate holding means. It is a substrate processing apparatus as described in any one of Claims 1-5 containing these.
According to this configuration, the upper surface of the substrate is inclined obliquely in a state where a gas phase is formed between the liquid film of the processing liquid and the upper surface of the substrate. Thereby, the liquid film of the processing liquid on the substrate flows down along the upper surface of the substrate. Therefore, the liquid film of the processing liquid on the substrate can be quickly removed from the substrate in a short time. In addition, since the distance between the heating means and the substrate in the direction perpendicular to the upper surface of the substrate is maintained constant, uneven heating is less likely to occur than when only the substrate is tilted, and stable substrate heating can be continued.

It is the schematic diagram which looked at the substrate processing apparatus which concerns on 1st Embodiment of this invention from the top. It is the schematic diagram which looked at the inside of a processing unit horizontally. It is a top view which shows a 1st holding | maintenance unit and a 2nd holding | maintenance unit. It is a top view which shows a movable pin. It is a schematic diagram of a part of the processing unit showing a cross section of the guide member. It is a top view which shows the positional relationship of a some guide member and a board | substrate. It is the schematic diagram which looked at the fixing pin horizontally. It is the schematic diagram which looked at the movable pin and the chuck opening / closing unit horizontally. It is sectional drawing which follows the IX-IX line | wire shown in FIG. 8, and has shown the state in which a movable pin is located in a closed position. It is sectional drawing which follows the IX-IX line | wire shown in FIG. 8, and has shown the state in which a movable pin is located in an open position. It is process drawing for demonstrating an example of the process of the board | substrate performed by the process unit. It is a schematic diagram which shows the state before the liquid film of IPA floats. It is a schematic diagram which shows the state after the liquid film of IPA surfaced. It is a schematic diagram which shows the state which the crack or crack generate | occur | produced in the liquid film of IPA. It is a schematic diagram which shows the state which the liquid film of IPA has floated from the upper surface of the board | substrate. It is a schematic diagram which shows the state by which the liquid film of IPA on a board | substrate is induced | guided | derived by the induction | guidance | derivation member. It is a schematic diagram which shows the 1st example of the relationship between the surface state of a board | substrate, and the temperature setting of the heater corresponding to this. It is a schematic diagram which shows the 2nd example of the relationship between the surface state of a board | substrate, and the temperature setting of the heater corresponding to this. It is a schematic diagram which shows the 3rd example of the relationship between the surface state of a board | substrate, and the temperature setting of the heater corresponding to this. It is a block diagram for demonstrating the electrical structure of a substrate processing apparatus. It is process drawing which shows an example of a flow until the process of a board | substrate is performed after board | substrate information is input into a substrate processing apparatus. It is a schematic diagram which shows the organic solvent exclusion process which concerns on 2nd Embodiment of this invention. It is a schematic diagram which shows the organic solvent exclusion process which concerns on 3rd Embodiment of this invention, and has shown the state in which the low temperature area | region and the high temperature area | region are formed in the upper surface of a board | substrate. In the organic solvent exclusion process which concerns on 3rd Embodiment of this invention, it is a schematic diagram which shows the state which is expanding the high temperature area | region outward. It is the schematic diagram which looked at the attitude | position change unit which concerns on 4th Embodiment of this invention horizontally. It is a schematic diagram which shows the state in which the board | substrate and the hot plate were inclined by the attitude | position change unit. It is sectional drawing of the board | substrate which shows the liquid level formed in a pattern in a spin dry process.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes a disk-shaped substrate W such as a silicon wafer one by one. As shown in FIG. 1, a substrate processing apparatus 1 is mounted with a plurality of processing units 2 that process a substrate W with a processing liquid and a carrier C that stores a plurality of substrates W processed by the processing unit 2. A load port LP, a transfer robot IR and a transfer robot CR that transfer the substrate W between the load port LP and the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1 are included.

As shown in FIG. 2, the processing unit 2 holds the single substrate W in a horizontal posture, and rotates the substrate W around a vertical rotation axis A <b> 1 that passes through the center of the substrate W. And a second holding unit 29 that heats the single substrate W while holding it in a horizontal posture. The first holding unit 15 and the second holding unit 29 are an example of a substrate holding unit.
As shown in FIG. 2, the processing unit 2 further includes an openable / closable inner chamber 7 that houses the first holding unit 15 and the second holding unit 29, and a cylindrical cup that surrounds the inner chamber 7 around the rotation axis A1. 38 and an outer chamber 4 that houses the inner chamber 7 and the cup 38.

  As shown in FIG. 2, the outer chamber 4 includes a box-shaped chamber body 5 that houses the first holding unit 15 and the second holding unit 29, and a shutter that opens and closes a loading / unloading port provided in the chamber body 5. 6 and so on. Although not shown, the outer chamber 4 further includes a shutter opening / closing unit that moves the shutter 6 between an open position where the loading / unloading port is opened and a closed position where the loading / unloading port is closed.

  As shown in FIG. 2, the inner chamber 7 includes a bottomed cylindrical chamber body 8 that houses the first holding unit 15 and the second holding unit 29, and an upper lid that opens and closes an opening provided at the upper end of the chamber body 8. 11 and a lid lifting / lowering unit 14 that lifts and lowers the upper lid 11 vertically in the outer chamber 4 between an upper position where the opening of the chamber body 8 is opened and a lower position where the opening of the chamber body 8 is closed by the upper lid 11. including.

  As shown in FIG. 2, the chamber body 8 includes a disk-shaped bottom wall portion 9 disposed along the floor surface of the outer chamber 4, and a cylindrical lower peripheral wall extending upward from the outer peripheral portion of the bottom wall portion 9. Part 10. The upper lid 11 includes a disk-shaped upper wall portion 12 held in a horizontal posture above the chamber body 8 and a cylindrical upper peripheral wall portion 13 extending downward from the outer peripheral portion of the upper wall portion 12. The upper wall portion 12 of the upper lid 11 is disposed above the first holding unit 15 and the second holding unit 29. The lower peripheral wall portion 10 of the chamber body 8 surrounds the first holding unit 15 and the second holding unit 29. The upper peripheral wall portion 13 of the upper lid 11 is disposed above the lower peripheral wall portion 10 of the chamber body 8. The chamber body 8 is connected to a drainage pipe (not shown) for guiding the liquid discharged from the chamber body 8.

  As shown in FIGS. 2 and 5, the lid lifting / lowering unit 14 raises and lowers the upper lid 11 in the vertical direction between an upper position (position shown in FIG. 2) and a lower position (position shown in FIG. 5). The lower position is a sealed position where the opening of the chamber body 8 is closed. The upper position is a retracted position where the upper lid 11 is retracted upward from the chamber body 8. When the lid lifting / lowering unit 14 moves the upper lid 11 to the lower position, the annular lower surface of the upper peripheral wall portion 13 approaches the annular upper surface of the lower peripheral wall portion 10, and the gap between the upper peripheral wall portion 13 and the lower peripheral wall portion 10 is It is sealed by an annular seal member SL1 held on the upper peripheral wall portion 13. Thereby, the sealing degree inside the inner chamber 7 increases. On the other hand, when the lid lifting / lowering unit 14 moves the upper lid 11 to the upper position, the annular lower surface of the upper peripheral wall portion 13 moves away from the annular upper surface of the lower peripheral wall portion 10, and the lower surface and lower peripheral wall portion of the upper peripheral wall portion 13. The distance between the upper peripheral wall 10 and the lower peripheral wall 10 is wide enough to allow the scan nozzle to enter.

  As shown in FIG. 2, the first holding unit 15 cooperates with a plurality of (for example, six) fixing pins 16 that support the substrate W in a horizontal posture and the plurality of fixing pins 16. And a plurality of (for example, three) movable pins 19 that hold the device in a horizontal posture. The first holding unit 15 further includes a support ring 23 that holds the plurality of fixed pins 16 and the plurality of movable pins 19, and a chuck opening / closing unit 25 that moves the plurality of movable pins 19 relative to the support ring 23. And a ring rotation unit 24 for rotating the support ring 23 around the rotation axis A1. Although not shown, the ring rotation unit 24 includes a rotor that rotates around the rotation axis A <b> 1 together with the support ring 23, and a stator that is held by the chamber body 8 of the inner chamber 7.

  As shown in FIG. 2, the fixed pin 16 and the movable pin 19 protrude upward from the support ring 23. The fixed pin 16 and the movable pin 19 are held by the support ring 23. As shown in FIG. 3, the six fixing pins 16 are arranged in the circumferential direction at equal intervals. The three movable pins 19 are respectively arranged in the vicinity of the three fixed pins 16 arranged continuously in the circumferential direction. The central angle of the arc passing through the three movable pins 19 in a plan view is less than 180 degrees, and the three movable pins 19 are arranged in a circumferential direction. The fixed pin 16 cannot move with respect to the support ring 23, and the movable pin 19 can move with respect to the support ring 23. The support ring 23 has an outer diameter larger than the outer diameter of the substrate W. The support ring 23 is held in the chamber body 8 of the inner chamber 7.

  As shown in FIG. 7, the fixing pin 16 contacts the lower surface peripheral portion of the substrate W to support the substrate W in a horizontal posture, and the substrate W supported by the fixed support portion 17. And a fixed grip 18 that is pressed against the peripheral edge. The fixed support portion 17 includes a support surface extending inwardly obliquely downward. The plurality of fixing pins 16 hold the substrate W in a horizontal posture by contact between the fixing support portion 17 and the lower surface peripheral edge portion of the substrate W. The support position of the substrate W by the plurality of fixing pins 16 is a position above the upper end of the lower peripheral wall portion 10 of the inner chamber 7.

  As shown in FIG. 4, the movable pin 19 includes a shaft portion 20 extending in the vertical direction, a base portion 21 supported by the shaft portion 20, and a columnar movable gripping portion 22 protruding upward from the base portion 21. Including. The movable pin 19 is between a closed position (a position indicated by a solid line) where the movable grip 22 is pressed against the peripheral edge of the substrate W and an open position (a position indicated by a two-dot chain line) where the movable grip 22 is separated from the substrate W. Thus, it can move with respect to the support ring 23 around a vertical pin rotation axis A2 (center line of the shaft portion 20). The plurality of movable pins 19 grip the substrate W in cooperation with the fixed gripping portions 18 of the plurality of fixed pins 16. The holding position of the substrate W by the fixed pins 16 and the movable pins 19 is the same position as the support position of the substrate W by the plurality of fixed pins 16.

  The chuck opening / closing unit 25 is a normally closed unit that moves the movable pin 19 from the closed position only when necessary. As shown in FIGS. 9A and 9B, the chuck opening / closing unit 25 applies to the movable magnet M1 the movable magnet M1 that rotates together with the movable pin 19 around the pin rotation axis A2, and the magnetic force that moves the movable pin 19 to the closed position. And a fixed magnet M2 to be provided. Both the movable magnet M1 and the fixed magnet M2 are permanent magnets. The movable magnet M1 and the fixed magnet M2 correspond to a closing unit that moves the movable pin 19 to the closed position.

  The movable magnet M <b> 1 is held by the movable pin 19 and is movable with respect to the support ring 23. The fixed magnet M <b> 2 is fixed to the support ring 23 and cannot move with respect to the support ring 23. The movable pin 19 is biased in the direction of the closed position by a repulsive force or an attractive force acting between the movable magnet M1 and the fixed magnet M2. Therefore, when no force other than the magnetic force acting between the movable magnet M1 and the fixed magnet M2 is applied to the movable pin 19, the movable pin 19 is disposed at the closed position.

  As shown in FIGS. 9A and 9B, the chuck opening / closing unit 25 generates two operated pieces 26 that rotate around the pin rotation axis A2 together with the movable pin 19, and power that moves the movable pin 19 to the open position. A lever operating unit 27 that transmits the power of the lever operating unit 27 to one of the two operated pieces 26. The operated piece 26, the lever operation unit 27, and the operation lever 28 correspond to an open unit that moves the movable pin 19 to the open position.

  As shown in FIGS. 9A and 9B, the two operated pieces 26 are disposed 180 degrees opposite to the pin rotation axis A2 in order to reduce the weight deviation. Although not shown, the lever operation unit 27 is an air cylinder including, for example, a cylinder main body held by the hot plate 30 and a rod movable with respect to the cylinder main body. The operation lever 28 is attached to the rod. The lever operation unit 27 and the operation lever 28 move up and down together with the hot plate 30 in the vertical direction.

  As shown in FIG. 8, the distal end portion of the operation lever 28 extends outward from the hot plate 30 (in a direction away from the rotation axis A1). The distal end portion of the operation lever 28 rotates the operated piece 26 by pressing the operated piece 26 while facing the operated piece 26 horizontally, and moves the movable pin 19 from the closed position to the open position. . As will be described later, the hot plate 30 moves in the vertical direction from the first substrate transfer process (step S7) to the second substrate transfer process (step S10), and accordingly, the tip portion of the operation lever 28 also moves in the vertical direction. . Even if the distal end portion of the operation lever 28 moves in the vertical direction in this way, the distal end portion of the operation lever 28 and the operated piece 26 are arranged so that the distal end portion of the operation lever 28 can always come into contact with the operated piece 26. Has a sufficient thickness in the vertical direction.

  When the movable pin 19 is moved to the open position, as shown in FIG. 9B, the control device 3 rotates the rotation angle of the support ring 23 so that the tip of the operation lever 28 faces one of the operated pieces 26 horizontally. And the height of the hot plate 30 are controlled. When the operating lever 28 moves outward with the tip of the operating lever 28 facing the one operated piece 26 horizontally, as shown in FIG. 9B, one operated piece 26 is moved to the operating lever 28. The movable pin 19 moves toward the open position. As a result, the movable pin 19 moves from the closed position to the open position.

  The transport robot CR places the substrate W supported from below by the hand H (see FIG. 1) on the fixed support portions 17 of the plurality of fixing pins 16 and is supported by the fixed support portions 17 of the plurality of fixing pins 16. The substrate W is scooped from below with the hand H. When the movable pin 19 moves from the open position to the closed position while the substrate W is supported by the plurality of fixed pins 16, the movable grip portion 22 of the movable pin 19 is pressed against the peripheral edge of the substrate W, and the movable pin 19. The substrate W moves horizontally on the opposite side. As a result, the peripheral edge of the substrate W is pressed against the fixed holding portion 18 of the fixed pin 16 at a position opposite to the movable pin 19, and the substrate W is held by the fixed pin 16 and the movable pin 19. Therefore, the substrate W is firmly held in a horizontal posture.

As shown in FIG. 2, the second holding unit 29 includes a hot plate 30 as a support plate that supports the substrate W in a horizontal posture, a support table 34 that supports the hot plate 30, and the support table 34 in the vertical direction. And a plate lifting / lowering unit 37 that moves the hot plate 30 up and down in the vertical direction.
As shown in FIG. 2, the hot plate 30 includes a plate body 31 having a horizontal and flat circular upper surface 31 a and the substrate W placed on the plate body 31 with the lower surface of the substrate W being close to the upper surface 31 a of the plate body 31. A plurality of support pins 32 supported above and a plurality of heaters 33 that heat the substrate W held by the plurality of support pins 32 from below the room temperature (for example, 20 to 30 ° C.). . The plurality of heaters 33 are an example of a heating unit.

  As shown in FIG. 3, the plate body 31 has an outer diameter that is smaller than the outer diameter of the substrate W (for example, 6 mm smaller). The plate body 31 can pass through the space inside the support ring 23 in the vertical direction. The support pin 32 includes a hemispherical protrusion that protrudes upward from the upper surface 31 a of the plate body 31. The plurality of support pins 32 are configured so that the bottom surface of the substrate W and the top surface 31a of the plate main body 31 are parallel or substantially parallel to each other by point contact between each protrusion and the bottom surface of the substrate W. Support with.

  The support pin 32 may be integrated with the plate body 31 or may be a member different from the plate body 31. In addition, the height of each support pin 32 may be constant or different. When the substrate W is warped, the way of warping (whether the central portion is convex upward or downward) may be predicted to some extent based on the processing of the substrate W already performed. Therefore, the height of each support pin 32 may be adjusted in advance according to the warp of the substrate W so that the substrate W is uniformly supported by the plurality of support pins 32.

  As shown in FIG. 3, the plurality of heaters 33 are arranged inside the plate body 31. The plurality of heaters 33 heat the entire upper surface 31 a of the plate body 31. The plurality of heaters 33 individually heat the plurality of regions on the upper surface of the substrate W at independent temperatures for each region. Therefore, the control device 3 can control the plurality of heaters 33 to heat the entire upper surface 31a of the plate body 31 at a uniform temperature or generate a temperature difference on the upper surface 31a of the plate body 31. . The heater 33 includes a central heater that heats the central portion of the upper surface 31a of the plate body 31, an intermediate heater that heats an annular upper surface surrounding the central portion of the upper surface 31a of the plate body 31, and an intermediate portion of the upper surface 31a of the plate body 31. And a peripheral heater for heating the peripheral upper peripheral edge of the ring.

  As shown in FIG. 2, the plurality of support pins 32 allow the substrate W to be placed above the plate body 31 so that the lower surface of the substrate W faces the upper surface 31 a of the plate body 31 with an interval of about 0.1 mm, for example. To support. The heat of the heater 33 is transmitted to the upper surface 31 a of the plate body 31. The heat of the heater 33 is transmitted to the substrate W through the space between the substrate W and the plate body 31. The heat of the heater 33 is transmitted to the substrate W through the support pins 32 that are in point contact with the lower surface of the substrate W. Since the substrate W and the plate body 31 are close to each other, a decrease in the heating efficiency of the substrate W can be suppressed. Furthermore, since the contact area between the substrate W and the support pins 32 is small, it is possible to suppress a decrease in temperature uniformity of the substrate W.

  When the lower surface of the substrate W is in surface contact with the upper surface 31a of the plate main body 31, when the lower surface of the substrate W and the upper surface 31a of the plate main body 31 are separated in the vertical direction, a negative pressure is generated between them. W may be adsorbed to the plate body 31. In this embodiment, the substrate W is supported by the plurality of support pins 32 in a state where the lower surface of the substrate W is separated from the upper surface 31 a of the plate body 31. Therefore, occurrence of such a phenomenon can be suppressed or prevented. Furthermore, since the lower surface of the substrate W is separated from the upper surface 31 a of the plate body 31, it is possible to suppress or prevent foreign matter on the upper surface 31 a of the plate body 31 from adhering to the substrate W.

  As shown in FIG. 2, the support table 34 includes a disk-like table portion 35 that supports the hot plate 30, and a shaft portion 36 that extends downward from the center portion of the table portion 35 along the rotation axis A <b> 1. The shaft portion 36 extends from the inner chamber 7 to the outside of the inner chamber 7 through the bottom wall portion 9 of the inner chamber 7. A gap between the shaft portion 36 of the support table 34 and the bottom wall portion 9 of the inner chamber 7 is sealed by an annular seal member SL2. The plate lifting / lowering unit 37 is connected to the shaft portion 36.

  The substrate W carried into the processing unit 2 is first held by the plurality of fixing pins 16 of the first holding unit 15. At this time, the hot plate 30 is retracted below the first holding unit 15. Thereafter, the hot plate 30 rises. The substrate W is transferred from the first holding unit 15 to the hot plate 30 in the process of raising the hot plate 30. When the hot plate 30 is further raised, the substrate W moves to a position higher than the position where the plurality of fixing pins 16 support the substrate W. When the hot plate 30 is lowered from this state, the substrate W is delivered from the hot plate 30 to the plurality of fixing pins 16. In this way, the substrate W is transferred between the plurality of fixing pins 16 and the hot plate 30 as the hot plate 30 moves up and down.

  As shown in FIGS. 2 and 5, the plate elevating unit 37 moves the support table 34 to move the hot plate between the upper position (position shown in FIG. 5) and the lower position (position shown in FIG. 2). 30 is moved up and down in the vertical direction. The upper position is a height at which the support position of the substrate W by the plurality of fixing pins 16 is located above the support position of the substrate W by the hot plate 30. The lower position is a height at which the support position of the substrate W by the plurality of fixing pins 16 is located below the support position of the substrate W by the hot plate 30. The lower position is a retracted position where the hot plate 30 is retracted below the position where the substrate W is supported by the plurality of fixing pins 16. The plate lifting / lowering unit 37 can position the hot plate 30 at an arbitrary height from the upper position to the lower position.

  As shown in FIGS. 2 and 5, the plate elevating unit 37 is hot in a state in which the plurality of fixing pins 16 of the first holding unit 15 support the substrate W (in a state where the grip of the substrate W is released). When the plate 30 is raised to a height above the lower surface of the substrate W, the substrate W moves from the plurality of fixing pins 16 to the hot plate 30. On the contrary, when the plate lifting unit 37 lowers the hot plate 30 to a height below the plurality of fixing pins 16 in a state where the hot plate 30 supports the substrate W, the substrate W is moved to the hot plate 30. To a plurality of fixing pins 16.

  As shown in FIG. 2, the processing unit 2 includes a lower gas pipe 41 that supplies gas to an upward discharge port 40 that opens at the center of the upper surface of the hot plate 30, and a lower gas valve 42 that is interposed in the lower gas pipe 41. And an in-line heater that heats the gas supplied from the lower gas pipe 41 to the upward discharge port 40. The gas supplied to the upward discharge port 40 is nitrogen gas. The gas supplied to the upward discharge port 40 is not limited to nitrogen gas, and may be an inert gas other than nitrogen gas such as argon gas, or may be dry air or clean air. The temperature of the gas supplied to the upward discharge port 40 may be room temperature or higher than room temperature.

  As shown in FIG. 2, the processing unit 2 includes a scan nozzle that discharges a processing liquid or a processing gas downward, a nozzle arm 49 with the scan nozzle attached to the tip, and an arm swing unit that moves the nozzle arm 49. 50. FIG. 2 shows an example in which the processing unit 2 includes two scan nozzles (chemical solution nozzle 43 and rinse solution nozzle 46). The chemical liquid nozzle 43 is connected to a chemical liquid pipe 44 in which a chemical liquid valve 45 is interposed. The rinse liquid nozzle 46 is connected to a rinse liquid pipe 47 in which a rinse liquid valve 48 is interposed.

Examples of the chemical liquid discharged from the chemical liquid nozzle 43 are sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide, organic acid (for example, citric acid and oxalic acid), organic alkali (for example, TMAH: tetra A liquid containing at least one of methylammonium hydroxide and the like, a surfactant, and a corrosion inhibitor.
The rinse liquid discharged from the rinse liquid nozzle 46 is pure water (deionized water). The rinse liquid discharged from the rinse liquid nozzle 46 is not limited to pure water but may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm). May be.

  The arm swinging unit 50 passes the tip of the nozzle arm 49 between the inside of the inner chamber 7 and the outside of the inner chamber 7 through the space between the chamber body 8 of the inner chamber 7 and the upper lid 11 of the inner chamber 7. Move. Accordingly, the scan nozzle moves horizontally between the processing position where the processing liquid discharged from the scan nozzle is deposited on the upper surface of the substrate W and the retreat position where the scan nozzle is retreated around the substrate W. The processing position includes a central position where the processing liquid is deposited on the center of the upper surface of the substrate W and a peripheral position where the processing liquid is deposited on the peripheral edge of the upper surface of the substrate W.

  As shown in FIG. 2, the processing unit 2 includes a fixed nozzle that discharges a processing liquid or a processing gas downward. FIG. 2 shows an example in which the processing unit 2 includes three fixed nozzles (an upper rinse liquid nozzle 51, an upper solvent nozzle 54, and an upper gas nozzle 57). The upper rinse liquid nozzle 51, the upper solvent nozzle 54, and the upper gas nozzle 57 are held by the upper lid 11 and move up and down together with the upper lid 11. The upper rinse liquid nozzle 51, the upper solvent nozzle 54, and the upper gas nozzle 57 are disposed in a through hole that penetrates the central portion of the upper lid 11 in the vertical direction. The upper rinse liquid nozzle 51 is connected to an upper rinse liquid pipe 52 in which an upper rinse liquid valve 53 is interposed. The upper solvent nozzle 54 is connected to an upper solvent pipe 55 in which an upper solvent valve 56 is interposed. The upper gas nozzle 57 is connected to an upper gas pipe 58 in which an upper gas valve 59 is interposed.

The rinse liquid discharged from the upper rinse liquid nozzle 51 is pure water. The rinse liquid discharged from the upper rinse liquid nozzle 51 is not limited to pure water, and may be the other rinse liquid described above.
The solvent liquid discharged from the upper solvent nozzle 54 is an IPA liquid at room temperature. The IPA liquid is an example of a low surface tension liquid having a lower surface tension than water and a lower boiling point than water. The low surface tension liquid is not limited to IPA, but may be a liquid of HFE (hydrofluoroether).

The gas supplied to the upper gas nozzle 57 is nitrogen gas at room temperature. The gas supplied to the upper gas nozzle 57 is not limited to nitrogen gas, and may be an inert gas other than nitrogen gas such as argon gas, or may be dry air or clean air. Further, the temperature of the gas supplied to the upper gas nozzle 57 may be higher than room temperature.
As shown in FIG. 2, the cup 38 can be moved up and down in the vertical direction between an upper position (position shown in FIG. 2) and a lower position. The upper position is a processing position where the upper end of the cup 38 is located at a height between the upper end of the lower peripheral wall portion 10 of the inner chamber 7 and the nozzle arm 49. The lower position is a retreat position where the upper end of the cup 38 is positioned below the upper end of the lower peripheral wall portion 10 of the inner chamber 7. The processing unit 2 includes a cup elevating unit (not shown) that elevates and lowers the cup 38 in the vertical direction between the upper position and the lower position. In a state where the upper lid 11 and the cup 38 are located at the upper position, the processing liquid discharged around the substrate W held by the first holding unit 15 is received by the cup 38 and collected in the cup 38. It is done. Then, the processing liquid collected in the cup 38 is sent to a collecting device or a draining device (not shown).

  As shown in FIG. 6, the processing unit 2 includes a plurality of (three or more, for example, four) guiding members 60 that guide the liquid on the substrate W outward. As illustrated in FIG. 5, the guide member 60 includes a first portion 61 that extends in the up-down direction and a second portion 62 that extends inward from the first portion 61 (a direction toward the rotation axis A <b> 1). The guide member 60 is held by the upper lid 11 and moves up and down with the upper lid 11 in the vertical direction. As shown in FIG. 6, the plurality of guide members 60 are arranged in the circumferential direction of the substrate W at equal intervals. The inner end 60i of the guide member 60 is disposed at a position overlapping the substrate W in plan view. The outer end 60o of the guide member 60 is disposed at a position (around the substrate W) that does not overlap the substrate W in plan view.

  Hereinafter, the description of the guide member 60 will be continued based on the state in which the upper lid 11 is in the lower position. As shown in FIG. 5, the guide member 60 has an inner surface that faces the upper surface and the peripheral edge of the substrate W with a space therebetween. The inner surface of the guide member 60 includes an outer guide surface 63 that extends obliquely downward and a lower guide surface 64 that extends vertically downward from an outer end 63o (lower end) of the outer guide surface 63. The height of the inner end 63i of the outer guide surface 63 is set to be higher than the flat portion of the upper surface of the substrate W in the organic solvent heating step and the organic solvent removal step described later. The outer end 63 o of the outer guide surface 63 is disposed outward from the substrate W. The height of the outer end 63o of the outer guide surface 63 is such that it is disposed below the upper surface of the substrate W and above the lower surface of the substrate W during the organic solvent heating step and the organic solvent removal step. Is set. The lower end of the lower guide surface 64 is disposed below the substrate W during the organic solvent heating step and the organic solvent removal step.

As shown in FIG. 11A, the substrate W processed by the processing unit 2 is, for example, a silicon wafer in which a pattern 101 is formed on the surface (upper surface 100) which is a pattern forming surface.
As shown in FIG. 11A, the pattern 101 may be a structure in which structures 102 having convex shapes (columnar shapes) are arranged in a matrix. In this case, the line width W1 of the structure 102 is, for example, about 10 nm to 45 nm, and the gap W2 between the adjacent structures 102 is, for example, about 10 nm to several μm.

The pattern 101 may be a pattern in which line-shaped patterns formed by fine trenches are repeatedly arranged.
The pattern 101 may be formed by providing a plurality of fine holes (voids or pores) in the thin film.
The pattern 101 includes an insulating film, for example. The pattern 101 may include a conductor film. More specifically, the pattern 101 may be formed of a laminated film in which a plurality of films are laminated. The laminated film may include an insulating film and a conductor film. The pattern 101 may be a pattern composed of a single layer film. The insulating film may be a silicon oxide film (SiO ₂ film) or a silicon nitride film (SiN film). The conductor film may be an amorphous silicon film into which impurities for reducing resistance are introduced, or may be a metal film (for example, a metal wiring film).

The film thickness T (see FIG. 11A) of the pattern 101 is, for example, about 50 nm to 5 μm. The pattern 101 may have an aspect ratio (ratio of the film thickness T to the line width W1) of, for example, about 5 to 500 (typically about 5 to 50).
Next, an example of processing of the substrate W performed by the processing unit 2 will be described. In the following, reference is made to FIGS. When the substrate W is processed by the processing unit 2, a loading process (step S <b> 1 in FIG. 10) for loading the substrate W into the outer chamber 4 is performed.

  Specifically, the control device 3 causes the hand H of the transfer robot CR holding the substrate W to enter the outer chamber 4 with the upper lid 11, the nozzle arm 49, and the cup 38 retracted. Then, the control device 3 controls the transport robot CR so that the substrate W on the hand H is placed on the plurality of fixing pins 16. At this time, the hot plate 30 is disposed at a height at which the chuck opening / closing unit 25 can drive the movable pin 19, although the hot plate 30 is spaced downward from the height at which it contacts the back surface (lower surface) of the substrate W. Further, the chuck opening / closing unit 25 positions the movable pin 19 in the open position. The control device 3 retracts the hand H of the transport robot CR from the outer chamber 4 after the substrate W is placed on the plurality of fixing pins 16 in a state where the surface that is the device formation surface is directed upward.

  The control device 3 moves the movable pin 19 from the open position to the closed position by the chuck opening / closing unit 25 after the substrate W is placed on the fixed support portions 17 of the plurality of fixed pins 16. As a result, the movable grip portion 22 of the movable pin 19 is pressed against the peripheral portion of the substrate W, and the fixed grip portion 18 of the fixed pin 16 is pressed against the peripheral portion of the substrate W. Therefore, the substrate W is held in a horizontal posture by the fixed pins 16 and the movable pins 19. Then, after the substrate W is gripped, the control device 3 causes the ring rotation unit 24 to start rotating the substrate W. Furthermore, the control device 3 raises the cup 38 to an upper position where the cup 38 receives the processing liquid discharged from the substrate W.

Next, a chemical solution supply process (step S2 in FIG. 10) for supplying the chemical solution to the substrate W is performed.
Specifically, the control device 3 controls the arm swinging unit 50 to retract the upper lid 11 to the upper position and move the nozzle arm 49 from the retracted position to the processing position while the hot plate 30 is separated from the substrate W. Move to. Accordingly, the chemical nozzle 43 moves between the lower peripheral wall portion 10 of the inner chamber 7 and the upper peripheral wall portion 13 of the inner chamber 7 and moves above the substrate W. The control device 3 moves the chemical liquid nozzle 43 above the substrate W, then opens the chemical liquid valve 45 and causes the chemical liquid nozzle 43 to discharge the chemical liquid toward the upper surface of the rotating substrate W. In this state, the control device 3 controls the arm swing unit 50 to move the liquid deposition position on the upper surface of the substrate W between the central portion and the peripheral portion. When a predetermined time elapses after the chemical liquid valve 45 is opened, the control device 3 closes the chemical liquid valve 45 and stops the discharge of the chemical liquid.

  The chemical liquid discharged from the chemical liquid nozzle 43 lands on the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W by centrifugal force. Then, the chemical solution scattered from the peripheral portion of the substrate W to the periphery thereof passes above the lower peripheral wall portion 10 of the inner chamber 7 and is received by the cup 38. The chemical solution is supplied to the entire upper surface of the substrate W to form a liquid film that covers the entire upper surface of the substrate W. Furthermore, since the control device 3 moves the liquid solution landing position with respect to the upper surface of the substrate W between the central portion and the peripheral portion while the substrate W is rotating, the liquid solution landing position is the substrate W It passes through the entire upper surface of. Therefore, the upper surface of the substrate W is uniformly treated with the chemical solution.

Next, a first rinsing liquid supply step (step S3 in FIG. 10) for supplying pure water, which is an example of a rinsing liquid, to the substrate W is performed.
Specifically, the control device 3 sets the rinse liquid valve 48 in a state where the rinse liquid nozzle 46 held by the nozzle arm 49 is located above the substrate W and the hot plate 30 is separated from the substrate W. open. Thereby, pure water is discharged from the rinse liquid nozzle 46 toward the center of the upper surface of the rotating substrate W. Therefore, the chemical solution on the substrate W is washed away with pure water, and a pure water liquid film covering the entire upper surface of the substrate W is formed. When a predetermined time elapses after the rinsing liquid valve 48 is opened, the control device 3 closes the rinsing liquid valve 48 and stops the discharge of pure water. Thereafter, the control device 3 controls the arm swing unit 50 to move the nozzle arm 49 from the processing position to the retracted position.

Next, an inner chamber sealing step (step S4 in FIG. 10) for closing the inner chamber 7 is performed.
Specifically, the control device 3 controls the lid lifting unit 14 so that the nozzle arm 49 is retracted to the retracted position, and the entire upper surface of the substrate W is covered with a pure water liquid film. The upper lid 11 is moved from the upper position to the lower position. Thereby, the clearance gap between the upper peripheral wall part 13 of the upper cover 11 and the lower peripheral wall part 10 of the chamber main body 8 is sealed. At this time, the substrate W is held by the fixed pin 16 and the movable pin 19. The hot plate 30 is separated from the substrate W to a height at which the heat of the heater 33 is not sufficiently transmitted to the substrate W even if the heater 33 generates heat.

Next, a second rinsing liquid supply step (step S5 in FIG. 10) for supplying pure water, which is an example of the rinsing liquid, to the substrate W is performed.
Specifically, after the upper lid 11 has moved to the lower position, the control device 3 opens the upper rinse liquid valve 53 and supplies pure water to the upper rinse liquid nozzle 51 toward the center of the upper surface of the rotating substrate W. To discharge. Thereby, a liquid film covering the entire upper surface of the substrate W is formed by pure water discharged from the upper rinse liquid nozzle 51. Further, pure water scattered from the periphery of the substrate W to the periphery thereof is discharged from the bottom wall portion 9 of the chamber body 8. When a predetermined time elapses after the upper rinse liquid valve 53 is opened, the control device 3 closes the upper rinse liquid valve 53 and stops the discharge of pure water.

Next, an organic solvent supply step (step S6 in FIG. 10) for supplying an IPA liquid, which is an example of an organic solvent, to the substrate W is performed in a state where the inner chamber 7 is closed.
Specifically, the control device 3 opens the upper solvent valve 56 in a state where the inner chamber 7 is closed and the entire upper surface of the substrate W is covered with a liquid film of pure water. At this time, the substrate W is held by the fixed pins 16 and the movable pins 19, and the hot plate 30 is separated from the substrate W. The IPA liquid discharged from the upper solvent nozzle 54 is deposited on the center of the upper surface of the rotating substrate W and flows outward along the upper surface of the substrate W. Thus, the pure water on the substrate W is replaced with the IPA liquid, and an IPA liquid film covering the entire upper surface of the substrate W is formed. When a predetermined time elapses after the upper solvent valve 56 is opened, the control device 3 closes the upper solvent valve 56 and stops the discharge of IPA.

  While the upper solvent nozzle 54 discharges the IPA liquid, the rotation speed of the substrate W may be constant or may be changed. For example, in order to promote the replacement of pure water with IPA, after the substrate W is rotated at a replacement acceleration speed (for example, 800 rpm) only at the beginning of the period during which the IPA liquid is discharged, after the replacement is smaller than the replacement acceleration speed. The substrate W may be rotated at a speed. Alternatively, the IPA paddle covering the entire upper surface of the substrate W may be held on the substrate W in a state where the discharge of the IPA is stopped after the replacement with the IPA is completed. Specifically, after the rotation speed of the substrate W is reduced to a paddle speed (speed exceeding 0 rpm and less than 50 rpm, for example, 20 rpm), or after the rotation of the substrate W is stopped, the IPA from the upper solvent nozzle 54 is used. May be stopped. In this case, since the discharge amount of IPA from the substrate W decreases due to the decrease in centrifugal force, the IPA paddle having a predetermined film thickness is held on the substrate W.

  Next, a first substrate transfer process (step S7 in FIG. 10) is performed in which the substrate W is moved from the first holding unit 15 to the second holding unit 29. Specifically, the control device 3 controls the rotation angle of the support ring 23 and the height of the hot plate 30 so that the chuck opening / closing unit 25 held by the hot plate 30 moves the movable pin 19 on the support ring 23. The chuck opening / closing unit 25 and the movable pin 19 are moved to a drivable position. Thereafter, the control device 3 controls the chuck opening / closing unit 25 to move the movable pin 19 from the closed position to the open position. Thereby, the holding of the substrate W by the fixed pins 16 and the movable pins 19 is released, and the substrate W is supported by the plurality of fixed pins 16 in a non-holding state. The control device 3 moves the hot plate 30 upward by controlling the plate lifting / lowering unit 37. As a result, the substrate W is lifted by the support pins 32 of the hot plate 30 and rises away from the plurality of fixing pins 16. The control device 3 raises the hot plate 30 until the liquid film of IPA on the substrate W comes into contact with the outer guide surface 63 and the lower guide surface 64 (see FIG. 5) of the guide member 60 described above.

Next, an organic solvent heating step (step S8 in FIG. 10) is performed in which the IPA liquid on the substrate W is evaporated to form a gas phase between the IPA liquid film and the upper surface of the substrate W.
Specifically, the control device 3 causes the heater 33 to generate heat by starting energization of the heater 33. Heat generation of the heater 33 may be started at the same time as the substrate W is supported by the hot plate 30, or may be started before or after the substrate W is supported by the hot plate 30. Due to the heat generated by the heater 33, the temperature of the hot plate 30 (the temperature of the plate body 31) is higher than the boiling point of IPA (82.4 ° C.) (for example, 10 to 50 ° C. higher than the boiling point of IPA). Is maintained at that temperature. As a result, the IPA liquid evaporates at all positions on the upper surface of the substrate W, and the IPA liquid film is separated from the upper surface of the substrate W. At this time, the substrate W and the plurality of guide members 60 are set in a positional relationship in which the liquid film of the IPA after floating does not contact the outer guide surface 63 and the lower guide surface 64 of the plurality of guide members 60. . Details of the floating of the IPA liquid film will be described later.

Next, an organic solvent removing step (step S9 in FIG. 10) is performed to remove the IPA liquid film from the substrate W in a state where the gas phase is interposed between the IPA liquid film and the upper surface of the substrate W. .
Specifically, the control device 3 brings the outer guide surfaces 63 of the plurality of guide members 60 into contact with the peripheral portions of the IPA liquid film in a state where the IPA liquid film floats from the upper surface of the substrate W. For example, the control device 3 raises the hot plate 30 by a minute amount as compared with the time of the organic solvent heating step (step S8 in FIG. 10), and the outer guiding surfaces 63 of the plurality of guiding members 60 Contact the liquid film. However, the height of the hot plate 30 may be the same during the organic solvent heating step and during the organic solvent removal step. That is, the IPA liquid film on the substrate W may be in contact with the outer guide surfaces 63 of the plurality of guide members 60 from the stage of the organic solvent heating step (step S8). The liquid film of IPA moves with respect to the substrate W by contact with the plurality of guide members 60 and is excluded from the substrate W. Details of the removal of the IPA liquid film will be described later.

  It should be noted that when the hot plate 30 is slightly increased or not increased from the organic solvent heating step (step S8) to the organic solvent exclusion step (step S9), a plurality of cases in the organic solvent exclusion step (S9) are used. The positional relationship between the guide member 60 and the substrate W is set so that the height of the plurality of guide members 60 is higher than the support position of the substrate W by the plurality of fixing pins 16.

Next, a second substrate transfer step (step S10 in FIG. 10) for moving the substrate W from the second holding unit 29 to the first holding unit 15 is performed.
Specifically, the control device 3 controls the rotation angle of the support ring 23 and the height of the hot plate 30, so that the chuck opening / closing unit 25 and the movable pin are moved to a position where the chuck opening / closing unit 25 can drive the movable pin 19. 19 is moved. Since the chuck opening / closing unit 25 is a normally closed unit, the movable pin 19 is disposed at the closed position. Therefore, the control device 3 controls the chuck opening / closing unit 25 to move the movable pin 19 from the closed position to the open position. The control device 3 moves the hot plate 30 downward in this state by controlling the plate lifting / lowering unit 37. As a result, the plurality of fixing pins 16 come into contact with the lower surface of the substrate W, and the hot plate 30 is separated from the lower surface of the substrate W.

Next, an inner chamber releasing step (step S11 in FIG. 10) for opening the inner chamber 7 and a carrying-out step (step S12 in FIG. 10) for carrying out the substrate W from the outer chamber 4 are performed.
Specifically, the control device 3 controls the lid lifting unit 14 to move the upper lid 11 from the lower position to the upper position. At this time, although the hot plate 30 is separated from the substrate W, the chuck opening / closing unit 25 is disposed at a position where the movable pin 19 can be driven. The chuck opening / closing unit 25 positions the movable pin 19 at the open position. The control device 3 causes the hand H of the transport robot CR to enter the outer chamber 4 with the upper lid 11 retracted to the upper position and the cup 38 is positioned at the lower position. Then, the control device 3 supports the substrate W supported by the plurality of fixing pins 16 on the hand H of the transport robot CR. Thereafter, the control device 3 retracts the hand H of the transfer robot CR from the outer chamber 4. Thereby, the processed substrate W is unloaded from the outer chamber 4.

Next, the floating of the IPA liquid film in the organic solvent heating step (step S8 in FIG. 10) will be described in detail.
The substrate W whose entire upper surface is covered with the liquid film of IPA is uniformly heated at the liquid film floating temperature in the organic solvent heating step (step S8 in FIG. 10), and is maintained at the liquid film floating temperature. Further, the heating of the IPA liquid film on the substrate W is performed in a state where the substrate W is not rotating and is stationary. The liquid film floating temperature is a predetermined temperature (for example, 10 to 50 ° C.) higher than the boiling point of IPA (82.4 ° C.). The liquid film floating temperature is a temperature at which the liquid film of the floating IPA does not boil.

Since the temperature of the substrate W is higher than the boiling point of IPA, the IPA liquid evaporates at each part on the upper surface of the substrate W, and IPA vapor is generated. Furthermore, the trace amount gas contained in the IPA liquid expands due to the temperature rise of the IPA liquid. Therefore, bubbles are generated near the upper surface of the substrate W (the upper surface of the base material and the surface of the pattern).
As shown in FIG. 11A, the inside of the pattern 101 (the space between two adjacent structures or the internal space of a cylindrical structure) is filled with the IPA liquid. The pattern 101 is filled with gas by the generation of the IPA vapor. That is, as shown in FIG. 11B, the IPA liquid in the pattern 101 is instantaneously discharged from the pattern 101 by heating the substrate W. Further, the IPA liquid film 111 on the substrate W is gradually lifted by the generation of the IPA vapor and leaves the pattern 101. That is, the gas phase 112 containing the IPA vapor is interposed between the upper surface of the pattern 101 (the upper surface 102A of the structure 102) and the IPA liquid film 111, and the IPA liquid film 111 passes through the gas phase 112. Supported by the substrate W.

  As shown in FIG. 12, cracks and cracks 113 (hereinafter referred to as “cracks 113”) may occur in the IPA liquid film 111 floating from the upper surface of the substrate W. There is a possibility that a defect such as a watermark may occur in the portion where the crack or the like 113 has occurred after drying. Therefore, in the organic solvent heating step (step S8 in FIG. 10), it is necessary to suppress or prevent the occurrence of cracks 113 in the IPA liquid film 111 that is floating.

The following two factors can be cited as factors causing the crack 113 or the like in the IPA liquid film 111 that is floating.
The first factor is the generation of a large amount of IPA vapor or the boiling of the IPA liquid film 111 due to long-time heating of the substrate W. When a large amount of IPA vapor is generated or the IPA liquid film 111 is boiled, the IPA vapor breaks through the IPA liquid film 111 above and blows out above the IPA liquid film 111. There is a risk of causing cracks 113 in the liquid film 111. The first factor is dealt with by adjusting the liquid film floating temperature and the heating time of the liquid film.

  The second factor is the splitting of the liquid film 111 of IPA that occurs due to the centrifugal force accompanying the rotation of the substrate W. The second factor is dealt with by stopping the rotation of the substrate W. That is, the rotation of the substrate W is stopped in the organic solvent heating step (step S8 in FIG. 10). Therefore, splitting due to centrifugal force can be prevented from occurring in the liquid film of IPA, and generation of cracks 113 can be prevented.

Next, the removal of the IPA liquid film in the organic solvent removal step (step S9 in FIG. 10) will be described in detail.
When the gas phase is interposed between the IPA liquid film and the upper surface of the substrate W, the frictional resistance acting on the IPA liquid film on the substrate W is so small that it can be regarded as zero. Therefore, when a force in a direction parallel to the upper surface of the substrate W is applied to the floating IPA liquid film, the IPA liquid film moves easily.

  In the organic solvent removing step (step S9 in FIG. 10), the guiding member 60 is placed on the peripheral edge of the IPA liquid film in a state where the liquid film of IPA floats from the upper surface of the substrate W (the state shown in FIG. 13). Contact. As shown in FIG. 14, when the guide member 60 comes into contact with the peripheral edge of the IPA liquid film, a part of the IPA liquid film (IPA liquid) moves from the substrate W to the outer guide surface 63 of the guide member 60. Then, it flows outward along the outward guide surface 63 of the guide member 60. Furthermore, the IPA guided outward by the outer guide surface 63 of the guide member 60 is guided downward by the lower guide surface 64 of the guide member 60. As a result, the IPA liquid is discharged from the outer peripheral portion of the upper surface of the substrate W.

  When the IPA liquid on the substrate W is discharged through the guide member 60, an outward flow is formed in the IPA liquid film. That is, a force having a component in a direction parallel to the upper surface of the substrate W is applied to the floating IPA liquid film. Therefore, the IPA liquid on the substrate W moves outward one after another on the substrate W, passes through the guide member 60, or passes between two guide members 60 adjacent in the circumferential direction (see FIG. 6). ) And discharged from the substrate W. Thereby, the liquid film of IPA is not dispersed from the upper surface of the substrate W, but is removed from the substrate W along the peripheral edge of the substrate W as a single continuous lump.

  The IPA liquid film is removed from the substrate W in a state where it floats from the upper surface of the substrate W, that is, in a state where the inside of the pattern is not filled with the liquid. After the IPA liquid film is removed from the substrate W, no liquid remains on the substrate W, and the substrate W is dry. Even if the IPA liquid remains, the amount is very small and does not affect the collapse of the pattern or the generation of the watermark, and evaporates immediately. Therefore, the substrate W is dried in a state where the inside of the pattern is not filled with the liquid. If the substrate W is dried in a state where the pattern is filled with the liquid, the force due to the surface tension is applied from the liquid to the pattern, so the pattern may collapse. On the other hand, in the first embodiment, since the liquid is excluded from the inside of the pattern, the collapse of the pattern can be suppressed or prevented.

Next, the temperature setting of the heater 33 in the organic solvent heating step (step S8 in FIG. 10) will be described in detail.
As shown in FIG. 15A, when the pattern formed on the surface of the substrate W is low, the control device 3 sets the liquid film levitation temperature (temperature of the hot plate 30) to be lower in the range equal to or higher than the boiling point of IPA. Further, the control device 3 executes at least one of (1L) and (2L) as necessary. (1L) In order to reduce power consumption, the time during which the hot plate 30 is heating the substrate W at the liquid film floating temperature is reduced. (2L) In order to reduce the consumption of IPA liquid, the thickness of the IPA liquid film on the substrate W formed in the organic solvent supply step (step S6 in FIG. 10), that is, the amount of IPA on the substrate W Decrease.

  On the contrary, as shown in FIG. 15B, when the pattern formed on the surface of the substrate W is high, the control device 3 sets the liquid film levitation temperature to be higher in the range not less than the boiling point of IPA. Further, the control device 3 executes at least one of (1H) and (2H) as necessary. (1H) In order to float the IPA liquid film more reliably, the time during which the hot plate 30 is heating the substrate W at the liquid film floating temperature is increased. (2H) In order to reliably cover all patterns with the IPA liquid film, the thickness of the IPA liquid film on the substrate W formed in the organic solvent supply step (step S6 in FIG. 10), that is, the IPA on the substrate W Increase the amount of liquid.

As shown in FIG. 15A, when the pattern is low and the pattern height is uniform, for example, the control device 3 reduces the liquid film floating temperature (heating temperature), the heating time, and the IPA liquid amount. Perform all of the reduction. Further, the control device 3 causes the hot plate 30 to uniformly heat the upper surface of the substrate W.
As shown in FIG. 15B, when the pattern is high and the pattern height is uniform, for example, the control device 3 increases the liquid film floating temperature (heating temperature), the heating time, and the liquid amount of IPA. Perform all of the increases. Further, the control device 3 causes the hot plate 30 to uniformly heat the upper surface of the substrate W.

  As illustrated in FIG. 15C, when the pattern height is not uniform, the control device 3 controls the plurality of heaters 33 to adjust the temperature distribution of the hot plate 30 according to the pattern height. For example, when the pattern formed on the center of the upper surface of the substrate W is low and the pattern formed on the periphery of the upper surface of the substrate W is high, the control device 3 determines that the periphery of the hot plate 30 is higher than the center of the hot plate 30. The plurality of heaters 33 are controlled so that the temperature becomes high. Further, the control device 3 increases the heating time and increases the IPA liquid amount.

  When a carrier C (see FIG. 1) containing a plurality of substrates W constituting one lot is placed on the load port LP of the substrate processing apparatus 1, substrate information indicating information on the substrates W in the carrier C is displayed. Is sent from the host computer to the control device 3 (step S21 in FIG. 17). The host computer is a computer that supervises a plurality of substrate processing apparatuses installed in a semiconductor manufacturing factory. As will be described below, the control device 3 sets processing conditions for the substrate W based on the substrate information sent from the host computer (step S22 in FIG. 17). Then, the control device 3 causes the substrate processing apparatus 1 to process the substrate W in the carrier C in accordance with the set processing conditions (step S23 in FIG. 17). When a new carrier C is placed on the load port LP, this series of steps is repeated. That is, the processing conditions for the substrate W are set for each lot.

  The board information includes at least one of a pattern shape, a pattern size, and a pattern material. The shape of the pattern represents, for example, whether the pattern formed on the substrate W is a line pattern or a cylinder pattern. When the line-shaped pattern is formed on the substrate W, the size of the pattern includes the height, width, and length of the pattern. When the cylindrical pattern is formed on the substrate W, the size of the pattern includes the outer diameter, the inner diameter, and the height of the pattern. The material of the pattern represents, for example, whether the pattern is made of metal or an insulating material. In the case where the pattern is composed of a laminated film, the material of the pattern includes the material of each film included in the laminated film.

  As illustrated in FIG. 16, the control device 3 includes an information receiving unit 78 to which substrate information is input, a map indicating the correspondence between the substrate information and the set temperatures of the plurality of heaters 33, and a recipe indicating the processing conditions for the substrate W. Are stored, a temperature setting unit 80 that sets the temperature of the plurality of heaters 33 for each heater 33 based on the substrate information input to the information receiving unit 78, and a condition specified by the recipe A processing execution unit 81 that causes the substrate processing apparatus 1 to process the substrate W. The substrate information input to the information receiving unit 78 may be transmitted from an external device such as a host computer, or may be input to the information receiving unit 78 via the input device provided in the substrate processing apparatus 1. It may be a thing.

  The board information transmitted by the host computer is input to the information receiving unit 78 of the control device 3. The temperature setting unit 80 of the control device 3 reads the set temperatures of the plurality of heaters 33 corresponding to the substrate information input to the information receiving unit 78 from the map stored in the storage unit 79 of the control device 3, and reads the read temperature setting And the set temperature specified in the recipe. When both are different, the temperature setting unit 80 changes the set temperature specified in the recipe to the set temperature corresponding to the board information. Then, the process execution unit 81 of the control device 3 reads the recipe sent from the temperature setting unit 80 (if the set temperature read by the temperature setting unit 80 is different from the set temperature specified in the recipe, ), The substrate processing apparatus 1 executes the processing of the substrate W shown in FIG.

  If the heat capacity of the pattern or the heat transfer coefficient between the pattern and the liquid changes, the temperature of the pattern surface rises or falls even if the temperature of the hot plate 30 is constant. When the temperature of the surface of the pattern is lower than the boiling point of IPA, the IPA liquid does not evaporate sufficiently on the surface of the pattern, and a gas phase having a sufficient thickness is not formed between the IPA liquid film and the upper surface of the substrate W. If the surface temperature of the pattern is too high, the IPA liquid will boil or the IPA liquid film will crack.

The heat capacity of the pattern changes according to the mass of the pattern and the specific heat. The mass of the pattern depends on the density and volume of the pattern. The specific heat of the pattern depends on the material of the pattern. The heat transfer coefficient between the pattern and the liquid depends on the surface area of the pattern. The surface area of the pattern depends on the shape and volume of the pattern.
For example, when the pattern aspect ratio increases, the contact area between the surface of the pattern and the IPA liquid increases, and the efficiency of heat transfer from the substrate W to the IPA liquid increases. As a result, the temperature of the substrate W tends to decrease. On the other hand, when the pattern aspect ratio is small, the temperature of the substrate W is likely to rise. Further, as the pattern aspect ratio increases, the amount of IPA liquid present inside the pattern increases. Therefore, unless more heat is applied to the substrate W, the IPA liquid in the pattern cannot be removed in a short time.

  As described above, in the first embodiment, the control device 3 sets the temperatures of the plurality of heaters 33 based on the substrate information including the surface state of the substrate W such as the pattern size. Thereby, irrespective of the surface state of the substrate W, the temperature of the upper surface of the substrate W can be made uniform over the entire surface. Further, the control device 3 sets the temperature of the plurality of heaters 33 for each lot. The substrates W belonging to the same rod have the same surface state since the same processing is performed. If the rod is different, the surface state of the substrate W may be different. Therefore, the quality of the processed substrate W can be made uniform by setting the temperatures of the plurality of heaters 33 for each lot.

  Further, in the first embodiment, the outer guiding surface 63 of the guiding member 60 has a peripheral edge of the IPA liquid film on the substrate W in a state where a gas phase is interposed between the IPA liquid film and the upper surface of the substrate W. Touch the part. The IPA liquid that has contacted the outer guide surface 63 is discharged to the periphery of the substrate W through the guide member 60. As a result of the contact between the guide member 60 and the liquid film, an outward flow toward the peripheral edge of the substrate W is formed in the IPA liquid film, and the IPA liquid film on the substrate W is split into a large number of droplets. Without being removed from the substrate W as a lump. Thereby, the liquid film of IPA can be quickly removed from the substrate W in a short time.

  In the first embodiment, the substrate W is dried in a state where the IPA liquid, which is an example of the low surface tension liquid, is located on the substrate W. Since the surface tension of the liquid on the substrate W before drying is small, even if a liquid surface straddling two adjacent structures is temporarily formed, the surface tension applied to the pattern is small. Therefore, occurrence of pattern collapse can be reduced. Further, since a liquid (IPA liquid) that is easily evaporated is supplied to the substrate W, a gas phase can be formed between the liquid film of IPA and the upper surface of the substrate W while suppressing the temperature of the heater 33.

  In the first embodiment, the inner chamber 7 that houses the first holding unit 15 and the second holding unit 29 is arranged in the outer chamber 4. Since the inner chamber 7 can be opened and closed, the inside of the inner chamber 7 can be isolated from the inside of the outer chamber 4 excluding the inner chamber 7 as necessary. Therefore, a highly sealed space that is doubly covered by the inner chamber 7 and the outer chamber 4 can be formed as necessary. Therefore, processing such as heating of the substrate W can be performed in a highly sealed space. Further, if the inner chamber 7 is opened, a nozzle for discharging gas or liquid can be moved back and forth between the inner chamber 7 and the outside of the inner chamber 7. You don't have to. Therefore, the enlargement of the inner chamber 7 can be suppressed or prevented.

In the first embodiment, since the inert gas can be supplied into the inner chamber 7 that accommodates the first holding unit 15 and the second holding unit 29, the air in the inner chamber 7 can be replaced with the inert gas. The oxygen concentration in the chamber 7 can be reduced. Therefore, it is possible to prevent the occurrence of a problem due to oxygen such as a watermark.
The description of the first embodiment of the present invention is as described above, but the present invention is not limited to the contents of the first embodiment, and various modifications can be made within the scope of the present invention.

For example, in the first embodiment, the case where the liquid film of IPA is excluded from the substrate W by bringing the guide member 60 into contact with the liquid film of IPA on the substrate W has been described. Means may be used.
Specifically, as shown in FIG. 18, the control device 3 opens the upper gas valve 59 in the organic solvent removal step (step S9 in FIG. 10), and puts nitrogen into the upper gas nozzle 57 as the liquid film removal means. Gas may be discharged. In this case, the temperature of the nitrogen gas may be room temperature, or higher than the boiling point of IPA (preferably higher than the temperature of hot plate 30). Further, the discharge of nitrogen gas may be continued until the IPA liquid film disappears from the substrate W, or may be stopped before the IPA liquid film disappears from the substrate W.

  According to this configuration, nitrogen gas is blown to the upper surface center portion (spraying position) of the substrate W in a state where a gas phase is formed between the IPA liquid film and the upper surface of the substrate W. The IPA liquid in the spray position is pushed away around it by the supply of nitrogen gas. Thereby, a dry region is formed at the spray position. Furthermore, since the IPA liquid moves from the spray position to the periphery thereof by supplying nitrogen gas, an outward flow toward the peripheral edge of the substrate W is formed in the IPA liquid film. Therefore, the IPA liquid film on the substrate W is removed from the substrate W as a lump without being broken into a large number of droplets by this flow. Thereby, the liquid film of IPA can be quickly removed from the substrate W in a short time. Further, when the temperature of the nitrogen gas is equal to or higher than the boiling point of IPA, the temperature drop of the IPA liquid film can be suppressed. Alternatively, the IPA liquid film can be heated.

  Further, as shown in FIG. 19A and FIG. 19B, the control device 3 controls the set temperature of the plurality of heaters 33 as the liquid film removing means, thereby controlling the IPA in the organic solvent heating step (step S9 in FIG. 10). The substrate W is uniformly heated at a temperature higher than the boiling point, and a low temperature region higher than the boiling point of the IPA and a high temperature region higher than the low temperature region are formed on the upper surface of the substrate W in the organic solvent removal step (step S9 in FIG. 10). May be. For example, the control device 3 may form a high temperature region in the center of the upper surface of the substrate W, form a low temperature region around it, and then move the annular boundary between the low temperature region and the high temperature region toward the low temperature region. Good. That is, the control device 3 may increase the diameter of the boundary between the low temperature region and the high temperature region.

  In this case, the central part of the IPA liquid film covering the central part of the upper surface of the substrate W becomes hotter than the surrounding part. The IPA liquid in the liquid film tends to move in the low temperature direction. Therefore, a radial flow toward the peripheral edge of the liquid film is formed in the IPA liquid film. As a result, as shown in FIGS. 19A and 19B, a hole is formed at the center of the IPA liquid film, and the outer diameter of the hole increases. Therefore, the IPA liquid film on the substrate W can be quickly removed from the substrate W in a short time by using the generation of the temperature difference and the induction member 60 in combination. Further, when the boundary between the low temperature region and the high temperature region is moved toward the low temperature region, the flow moving toward the low temperature in the liquid film is promoted. Thereby, the liquid film of IPA on the substrate W can be efficiently eliminated.

  20A and 20B, when the guide member 60 is not provided in the processing unit 2, the processing unit 2 includes the lower surface of the substrate W, the upper surface of the hot plate 30 (the upper surface 31a of the plate body 31), The posture in which the posture of the substrate W and the hot plate 30 is changed between a horizontal posture in which the upper surface of the substrate W is horizontal and an inclined posture in which the upper surface of the substrate W is inclined with respect to the horizontal plane, while maintaining a constant interval. A change unit 73 may be further provided.

  The posture changing unit 73 as the liquid film removing means includes a plurality (three or more) of expansion / contraction units 74 disposed between the hot plate 30 and the support table 34. The plurality of telescopic units 74 are disposed on the table portion 35 of the support table 34. The plurality of expansion / contraction units 74 are arranged in the circumferential direction at equal intervals on the peripheral edge of the upper surface of the table portion 35. The telescopic unit 74 is, for example, an air cylinder. The expansion / contraction unit 74 is not limited to an air cylinder, and may be a unit including an actuator such as an electric motor and a transmission unit (for example, a ball screw mechanism) that transmits the power of the actuator to the hot plate 30.

  The telescopic unit 74 includes a cylinder main body 75 fixed to the table portion 35 of the support table 34 and a rod 76 that is movable in the vertical direction with respect to the cylinder main body 75. The cylinder body 75 is disposed between the hot plate 30 and the support table 34. The rod 76 protrudes upward from the cylinder body 75. The hot plate 30 is supported by a plurality of extendable units 74 by contact between each rod 76 and the lower surface of the hot plate 30. The upward discharge port 40 that opens at the center of the upper surface of the hot plate 30 is connected to an elastically deformable lower pipe 77 that extends downward from the center of the hot plate 30. The lower pipe 77 is inserted into a passage provided inside the shaft portion 36 of the support table 34 and is connected to the lower gas pipe 41.

  The amount of protrusion of the rod 76 from the cylinder body 75 is set for each expansion / contraction unit 74 by the control device 3. The control device 3 changes the posture of the substrate W and the hot plate 30 between the horizontal posture and the inclined posture by adjusting the protruding amount of each rod 76. The inclination angle (angle with respect to the horizontal plane) of the upper surface of the hot plate 30 in the inclined posture is, for example, about 1 degree and is small. Accordingly, the substrate W is held by a frictional force that acts between the lower surface of the substrate W and the hot plate 30. Even if the substrate W slides with respect to the hot plate 30, if the stoppers such as the fixed pins 16 and the movable pins 19 are positioned around the substrate W as shown in FIG. The movement of W can be regulated.

  As shown in FIG. 20B, the control device 3 changes the posture of the substrate W and the hot plate 30 to the inclined posture in the organic solvent removal step (step S9 in FIG. 10). As the substrate W is tilted, the IPA liquid film on the substrate W flows down along the upper surface of the substrate W. Therefore, the IPA liquid film on the substrate W can be quickly removed from the substrate W in a short time. In addition, since the distance between the heater 33 and the substrate W in the direction perpendicular to the upper surface of the substrate W is maintained constant, uneven heating is less likely to occur than when only the substrate W is tilted, and stable heating of the substrate W can be achieved. Can continue.

In the first embodiment, the case where the liquid film of IPA is floated in the organic solvent heating step (step S8 in FIG. 10) has been described, but a liquid film other than IPA may be floated. For example, the pure water liquid film may be floated in the liquid film heating process corresponding to the organic solvent heating process, and the pure water liquid film may be excluded in the liquid film removing process corresponding to the organic solvent removal process.
Further, in order to prevent the upper surface of the substrate W from being partially exposed in the organic solvent heating step (step S8 in FIG. 10), IPA liquid may be appropriately replenished to the upper surface of the substrate W.

In the above-described embodiment, the case where the substrate processing apparatus 1 is an apparatus that processes a disk-shaped substrate has been described. However, the substrate processing apparatus 1 may be an apparatus that processes a polygonal substrate. .
Further, two or more of all the embodiments described above may be combined.

1: substrate processing apparatus 3: control apparatus 4: outer chamber 7: inner chamber 15: first holding unit (substrate holding means)
16: fixed pin 19: movable pin 22: movable gripping part 25: chuck opening / closing unit 29: second holding unit (substrate holding means)
30: Hot plate 33: Heater (heating means, liquid film removing means)
51: Upper rinse liquid nozzle (treatment liquid supply means)
53: Upper rinse liquid valve (treatment liquid supply means)
54: Upper solvent nozzle (treatment liquid supply means)
56: Upper solvent valve (treatment liquid supply means)
57: Upper gas nozzle (gas discharge means, liquid film exclusion means)
59: Upper gas valve (gas discharge means, liquid film exclusion means)
60: Guiding member (liquid film removing means)
61: 1st part 62: 2nd part 63: Outer guidance surface 64: Downward guidance surface 73: Posture change unit (posture change means, liquid film removal means)
74: Telescopic unit (posture changing means, liquid film removing means)
78: Information receiving unit 79: Storage unit 80: Temperature setting unit 81: Processing execution unit 101: Pattern 102: Structure 111: Liquid film W: Substrate

Claims (6)

Substrate holding means for holding the substrate horizontally;
Processing liquid supply means for forming a liquid film of the processing liquid covering the entire upper surface of the substrate by supplying the processing liquid to the upper surface of the substrate held by the substrate holding means;
A plurality of heaters for heating the entire upper surface of the substrate held by the substrate holding means at independent temperatures, and the upper surface of the substrate is a liquid film of a processing solution. Heating means for evaporating the processing liquid by heating at a temperature equal to or higher than the boiling point of the processing liquid in a covered state, and forming a gas phase between the liquid film of the processing liquid and the upper surface of the substrate;
In a state where a gas phase is interposed between the liquid film of the processing liquid and the upper surface of the substrate, the liquid film of the processing liquid is moved with respect to the substrate held by the substrate holding means, thereby processing from the substrate. A liquid film removing means for removing the liquid film of the liquid;
An information receiving unit that receives substrate information including a surface state of the substrate, and a temperature setting unit that sets temperatures of the plurality of heaters for each heater based on the substrate information input to the information receiving unit. And evaporating the processing liquid by uniformly heating the substrate held by the substrate holding means at a temperature equal to or higher than the boiling point of the processing liquid in a state where the entire upper surface of the substrate is covered with the liquid film of the processing liquid. And a control device that executes a uniform heating step of forming a gas phase between the liquid film of the processing liquid and the upper surface of the substrate.   The substrate processing apparatus according to claim 1, wherein the substrate information includes at least one of a pattern shape, a pattern size, and a pattern material. The liquid film removing means includes
An outer guide surface that contacts the peripheral edge of the liquid film of the processing liquid on the substrate held by the substrate holding means in a state where a gas phase is interposed between the liquid film of the processing liquid and the upper surface of the substrate. The substrate processing apparatus according to claim 1, further comprising a guide member that guides the processing liquid from the upper surface of the substrate to the periphery of the substrate by contact between the outer guide surface and a liquid film of the processing liquid.   The liquid film removing means discharges a gas toward the upper surface of the substrate held by the substrate holding means in a state where a gas phase is formed between the liquid film of the processing liquid and the upper surface of the substrate. The substrate processing apparatus according to claim 1, further comprising a gas discharge unit that forms a dry region from which the processing liquid has been removed in a partial region of the upper surface of the substrate.   In the state in which a gas phase is formed between the liquid film of the processing solution and the upper surface of the substrate after the uniform heating step, the control device has a low temperature region higher than the boiling point of the processing solution and a temperature higher than the low temperature region. The substrate processing apparatus as described in any one of Claims 1-4 which further performs the temperature difference generation | occurrence | production process which forms a high temperature area | region in the upper surface of a board | substrate.   The said liquid film exclusion means contains the attitude | position change means which inclines the board | substrate currently hold | maintained horizontally at the said board | substrate holding means diagonally, maintaining the space | interval of the said heating means and a board | substrate constant. The substrate processing apparatus as described in any one of Claims.

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