TWI655034B - Substrate processing device and substrate processing method - Google Patents
Substrate processing device and substrate processing method Download PDFInfo
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- TWI655034B TWI655034B TW106130726A TW106130726A TWI655034B TW I655034 B TWI655034 B TW I655034B TW 106130726 A TW106130726 A TW 106130726A TW 106130726 A TW106130726 A TW 106130726A TW I655034 B TWI655034 B TW I655034B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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Abstract
提供一種能夠使基板的被處理面上的處理液置換成揮發性溶劑的置換效率提升的基板處理裝置及基板處理方法。 實施形態的基板處理裝置(10),具備:對旋轉的基板(W)的被處理面(Wa)供應處理液的第1噴嘴(61);對旋轉的基板(W)的被處理面(Wa)的中心供應揮發性溶劑的第2噴嘴(71);以從第1噴嘴(61)對基板(W)的被處理面(Wa)的中心供應處理液的狀態,使基板(W)的被處理面(Wa)上的處理液供應位置從基板(W)的被處理面(Wa)的中心移動至中心附近的位置,並以從第1噴嘴(61)對基板(W)的被處理面(Wa)的中心附近的位置供應處理液,從第2噴嘴(71)對基板(W)的被處理面(Wa)的中心供應揮發性溶劑的狀態,作為使前述的處理液供應位置從基板(W)的被處理面(Wa)的中心沿著向外的方向移動的位置移動部而作用的第1噴嘴移動機構(62)。Provided are a substrate processing apparatus and a substrate processing method capable of improving the replacement efficiency of a processing liquid on a processing surface of a substrate with a volatile solvent. A substrate processing apparatus (10) according to an embodiment includes a first nozzle (61) for supplying a processing liquid to a processing surface (Wa) of a rotating substrate (W), and a processing surface (Wa) of a rotating substrate (W). A second nozzle (71) for supplying a volatile solvent in the center of the substrate; and a state in which the processing liquid is supplied from the first nozzle (61) to the center of the surface (Wa) for processing of the substrate (W). The processing liquid supply position on the processing surface (Wa) moves from the center of the processing surface (Wa) of the substrate (W) to a position near the center, and faces the processing surface of the substrate (W) from the first nozzle (61). The processing liquid is supplied from a position near the center of (Wa), and a state in which a volatile solvent is supplied from the second nozzle (71) to the center of the processing surface (Wa) of the substrate (W) is used as a process for supplying the processing liquid from the substrate The first nozzle moving mechanism (62) that functions as a position moving part in which the center of the processing surface (Wa) moves in an outward direction.
Description
本發明的實施形態係有關於基板處理裝置及基板處理方法。 Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method.
基板處理裝置為在半導體及液晶面板等的製造工程中,藉由藥液來處理晶圓及液晶基板等的基板的被處理面,用沖洗液來沖洗藥液處理後的基板的被處理面,並將沖洗液處理後的基板乾燥的裝置。在該乾燥工程中,因為伴隨著近年來半導體的高積體化及高容量化的微細化,在例如記憶體單元及閘門邊的圖案會有倒壞的問題發生。這是因為圖案之間的間隔及構造、沖洗液的表面張力等而引起。 The substrate processing device is used in semiconductor and liquid crystal panel manufacturing processes to process the processed surface of a substrate such as a wafer and a liquid crystal substrate with a chemical solution, and to rinse the processed surface of the substrate processed with the chemical solution with a rinse solution. A device for drying the substrate processed by the rinse solution. In this drying process, with the recent increase in the volume of semiconductors and the miniaturization of high-capacity, problems such as patterns on the edges of memory cells and gates may be broken. This is caused by the interval and structure between the patterns, the surface tension of the washing liquid, and the like.
其中,作為抑制前述圖案倒壞的目的,提案有利用表面張力比沖洗液,亦即沖洗用的處理液(例如DIW:超純水)還小的揮發性溶劑(例如IPA:2-丙醇、異丙醇)的基板乾燥方法。該基板乾燥方法為將基板的被處理面上的處理液置換成揮發性溶劑而進行基板乾燥的方法,在量產工廠等被使用。在該置換工程中,為了避免乾燥不均等的乾燥不良,需要將基板的被處理面以液膜包覆,並將基板 的被處理面上的處理液置換成揮發性溶劑。 Among them, for the purpose of suppressing the deterioration of the aforementioned pattern, it has been proposed to use a volatile solvent (such as IPA: 2-propanol, Isopropyl alcohol) substrate drying method. This substrate drying method is a method of drying a substrate by replacing a processing liquid on a processing surface of the substrate with a volatile solvent, and is used in a mass production factory or the like. In this replacement process, in order to avoid uneven drying due to uneven drying, it is necessary to cover the processing surface of the substrate with a liquid film and cover the substrate with a liquid film. The treatment liquid on the treated surface was replaced with a volatile solvent.
但是,在置換工程中,將基板的被處理面以液膜包覆,並迅速地將基板的被處理面上的處理液置換成揮發性溶劑是困難的。例如,基板以水平狀態旋轉,以對基板的被處理面的中心(例如,為圓形基板的話即意味著中心,為矩形基板的話即意味著對角線的交點。以下,同。)從斜向供應處理液的狀態,對該基板的被處理面的中心從正上方供應揮發性溶劑。接著,在揮發性溶劑的供應開始數秒後,停止處理液的供應,將基板的被處理面上的處理液置換成揮發性溶劑。此時,基板的被處理面上的液膜不會間斷,而基板的被處理面被液膜所包覆。 However, in the replacement process, it is difficult to cover the processing surface of the substrate with a liquid film and quickly replace the processing liquid on the processing surface of the substrate with a volatile solvent. For example, the substrate is rotated horizontally to the center of the processed surface of the substrate (for example, a circular substrate means the center, and a rectangular substrate means the intersection of diagonal lines. The same applies hereinafter). To the state where the processing liquid is supplied, a volatile solvent is supplied from directly above the center of the processing surface of the substrate. Next, a few seconds after the supply of the volatile solvent was started, the supply of the processing liquid was stopped, and the processing liquid on the processing surface of the substrate was replaced with the volatile solvent. At this time, the liquid film on the processing surface of the substrate is not interrupted, and the processing surface of the substrate is covered with the liquid film.
但是,在前述置換工程中,也在揮發性溶劑的供應開始後經過數秒間,處理液被供應至基板的被處理面的中心。因此,處理液的供應會阻害供應至基板的被處理面的中心的揮發性溶劑擴展至基板的被處理面的全體,亦即處理液的供應會阻害揮發性溶劑的擴展。因此,迅速地將基板的被處理面上的處理液置換成揮發性溶劑是困難的,從處理液置換成揮發性溶劑到結束為止需要時間。因此,期望能提高將基板的被處理面上的處理液置換成揮發性溶劑的置換效率。 However, in the aforementioned replacement process, the processing liquid is supplied to the center of the processing surface of the substrate within a few seconds after the start of the supply of the volatile solvent. Therefore, the supply of the processing liquid prevents the volatile solvent supplied to the center of the processed surface of the substrate from spreading to the entire processed surface of the substrate, that is, the supply of the processing liquid prevents the expansion of the volatile solvent. Therefore, it is difficult to quickly replace the processing liquid on the processing surface of the substrate with a volatile solvent, and it takes time until the processing liquid is replaced with a volatile solvent. Therefore, it is desired to improve the replacement efficiency of replacing the processing liquid on the processing surface of the substrate with a volatile solvent.
本發明所欲解決的問題為,提供一種能夠使基板的被處理面上的處理液置換成揮發性溶劑的置換效率提升的基 板處理裝置及基板處理方法。 The problem to be solved by the present invention is to provide a substrate capable of improving the replacement efficiency of a processing liquid on a processed surface of a substrate with a volatile solvent. Plate processing device and substrate processing method.
本發明的實施形態的基板處理裝置,具備:使具有被處理面的基板在平面內旋轉的旋轉機構;對被旋轉機構旋轉的基板的被處理面供應處理液的第1噴嘴;對被旋轉機構旋轉的基板的被處理面的中心供應揮發性溶劑的第2噴嘴;以從第1噴嘴對基板的被處理面的中心供應處理液的狀態,使基板的被處理面上的供應處理液的處理液供應位置從基板的被處理面的中心移動至中心附近的位置,並以從第1噴嘴對基板的被處理面的中心附近的位置供應處理液,從第2噴嘴對基板的被處理面的中心供應揮發性溶劑的狀態,使前述處理液供應位置從基板的被處理面的中心沿著向外的方向移動的位置移動部。 A substrate processing apparatus according to an embodiment of the present invention includes a rotation mechanism for rotating a substrate having a processing surface in a plane, a first nozzle for supplying a processing liquid to a processing surface of the substrate rotated by the rotation mechanism, and a rotation mechanism. A second nozzle that supplies a volatile solvent to the center of the processed surface of the rotating substrate; and a state in which the processing liquid is supplied from the first nozzle to the center of the processed surface of the substrate; The liquid supply position is moved from the center of the processed surface of the substrate to a position near the center, and the processing liquid is supplied from a position near the center of the processed surface of the substrate from the first nozzle to the processing surface of the substrate from the second nozzle. In a state where the volatile solvent is supplied from the center, the processing liquid supply position moves the position moving part in the outward direction from the center of the processing surface of the substrate.
本發明的實施形態的基板處理方法,具有:藉由旋轉機構使具有被處理面的基板在平面內旋轉的工程;從第1噴嘴對被旋轉機構旋轉的基板的被處理面的中心供應處理液的工程;以從第1噴嘴對基板的被處理面的中心供應處理液的狀態,使基板的被處理面上的供應處理液的處理液供應位置藉由位置移動部從基板的被處理面的中心移動至中心附近的位置的第1移動工程;以從第1噴嘴對基板的被處理面的中心附近的位置供應處理液的狀態,從第2噴嘴對被旋轉機構旋轉的基板的被處理面的中心供應揮發性溶劑的工程;以從第1噴嘴對基板的被處理面的中心附近的位置供應處理液,從第2噴嘴對基板的被處理面的中心供應揮發性溶劑的狀態,使前述處理液供應位置藉由位置移 動部從基板的被處理面的中心沿著向外的方向移動的第2移動工程。 A substrate processing method according to an embodiment of the present invention includes a process of rotating a substrate having a processing surface in a plane by a rotation mechanism, and supplying a processing liquid from a first nozzle to a center of a processing surface of the substrate rotated by the rotation mechanism. The state in which the processing liquid is supplied from the first nozzle to the center of the processing surface of the substrate, and the processing liquid supply position for supplying the processing liquid from the processing surface of the substrate is moved from the processing surface of the substrate by the position moving part. The first movement process in which the center is moved to a position near the center; the processing liquid is supplied from the first nozzle to a position near the center of the processed surface of the substrate, and the processed surface of the substrate rotated by the rotating mechanism is supplied from the second nozzle. A process of supplying a volatile solvent from the center of the substrate; a state in which the processing liquid is supplied from a position near the center of the processing surface of the substrate from the first nozzle to the center of the processing surface of the substrate from the second nozzle; Process liquid supply position by position shift The second moving process in which the moving part moves outward from the center of the processed surface of the substrate.
根據前述實施形態的基板處理裝置或基板處理方法,能夠使基板的被處理面上的處理液置換成揮發性溶劑的置換效率提升。 According to the substrate processing apparatus or the substrate processing method of the aforementioned embodiment, it is possible to improve the replacement efficiency of the processing liquid on the processing surface of the substrate with a volatile solvent.
10‧‧‧基板處理裝置 10‧‧‧ substrate processing equipment
50‧‧‧旋轉機構 50‧‧‧ rotating mechanism
61‧‧‧第1噴嘴 61‧‧‧The first nozzle
62‧‧‧第1噴嘴移動機構 62‧‧‧The first nozzle moving mechanism
62a‧‧‧可動臂 62a‧‧‧movable arm
62b‧‧‧臂擺動機構 62b‧‧‧arm swing mechanism
62c‧‧‧噴嘴直線移動機構 62c‧‧‧Nozzle linear movement mechanism
62d‧‧‧噴嘴頭擺動機構 62d‧‧‧Nozzle head swing mechanism
63‧‧‧第1液供應部 63‧‧‧The first liquid supply department
71‧‧‧第2噴嘴 71‧‧‧ 2nd nozzle
80‧‧‧控制部 80‧‧‧Control Department
W‧‧‧基板 W‧‧‧ substrate
Wa‧‧‧被處理面 Wa‧‧‧ treated surface
20‧‧‧處理室 20‧‧‧Processing Room
30‧‧‧罩杯 30‧‧‧cup
40‧‧‧支持部 40‧‧‧Support Department
41‧‧‧支持構件 41‧‧‧ supporting components
60‧‧‧處理液供應部 60‧‧‧ Treatment liquid supply department
70‧‧‧溶劑供應部 70‧‧‧ Solvent Supply Department
63a‧‧‧配管 63a‧‧‧Piping
73a‧‧‧配管 73a‧‧‧Piping
72‧‧‧第2噴嘴移動機構 72‧‧‧ 2nd nozzle moving mechanism
73‧‧‧第2液供應部 73‧‧‧The second liquid supply department
72a‧‧‧可動臂 72a‧‧‧ movable arm
72b‧‧‧臂擺動機構 72b‧‧‧arm swing mechanism
R1‧‧‧區域 R1‧‧‧ area
[圖1]表示有關第1實施形態的基板處理裝置的概略構成的圖。 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment.
[圖2]表示有關第1實施形態的基板處理裝置的一部分的平面圖。 FIG. 2 is a plan view showing a part of the substrate processing apparatus according to the first embodiment.
[圖3]用以說明有關第1實施形態的基板處理工程的圖。 FIG. 3 is a diagram illustrating a substrate processing process according to the first embodiment.
[圖4]用以說明有關第1實施形態的基板處理工程的一工程的圖。 FIG. 4 is a diagram for explaining one process of the substrate processing process according to the first embodiment.
[圖5]用以說明有關第1實施形態的基板處理工程的一工程的圖。 FIG. 5 is a diagram for explaining one process of the substrate processing process according to the first embodiment.
[圖6]用以說明有關第1實施形態的基板處理工程的比較例的圖。 FIG. 6 is a diagram illustrating a comparative example of a substrate processing process according to the first embodiment.
[圖7]用以說明有關第2實施形態的基板處理工程的圖。 FIG. 7 is a diagram for explaining a substrate processing process according to the second embodiment.
[圖8]用以說明有關第3實施形態的基板處理工程的一工程的圖。 FIG. 8 is a diagram for explaining one process of a substrate processing process according to the third embodiment.
[圖9]用以說明有關第3實施形態的粒子除去效果的 圖。 [Fig. 9] A diagram for explaining the particle removal effect according to the third embodiment Illustration.
[圖10]表示有關第4實施形態的基板處理裝置的一部分的概略構成的圖。 10 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a fourth embodiment.
[圖11]表示有關第5實施形態的基板處理裝置的一部分的概略構成的圖。 11 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a fifth embodiment.
[圖12]表示有關第6實施形態的基板處理裝置的一部分的概略構成的圖。 12 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a sixth embodiment.
[圖13]表示有關第7實施形態的基板處理裝置的一部分的概略構成的圖。 13 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a seventh embodiment.
有關第1實施形態參照圖1到圖6作說明。 The first embodiment will be described with reference to FIGS. 1 to 6.
如圖1所示,第1實施形態的基板處理裝置10具備:處理室20、罩杯30、支持部40、旋轉機構50、處理液供應部60、溶劑供應部70、控制部80。 As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment includes a processing chamber 20, a cup 30, a support section 40, a rotation mechanism 50, a processing liquid supply section 60, a solvent supply section 70, and a control section 80.
處理室20為用以處理具有被處理面Wa的基板W之處理區塊。該處理室20例如以長方體或正方體等箱形狀而形成,收容罩杯30及支持部40、旋轉機構50等。在處理室20內,存在有清淨度空氣所形成的垂直層流(向下流),因而保持處理室20內的清淨度。又,在處理室20內供應有N2等不活性氣體,抑制了處理室20內的氧濃度。 The processing chamber 20 is a processing block for processing a substrate W having a processing surface Wa. The processing chamber 20 is formed in, for example, a box shape such as a rectangular parallelepiped or a rectangular parallelepiped, and houses a cup 30, a support portion 40, a rotation mechanism 50, and the like. In the processing chamber 20, there is a vertical laminar flow (downflow) formed by the clean air, and thus the cleanliness in the processing chamber 20 is maintained. In addition, inactive gas such as N 2 is supplied in the processing chamber 20, and the oxygen concentration in the processing chamber 20 is suppressed.
罩杯30形成圓筒狀,且設置成位於處理室20內的略中央,該內部收容有支持部40及旋轉機構50。罩杯30的周壁的上部向內側傾斜,又以支持部40上的基板W的被處理面Wa露出的方式開口。該罩杯30接收從旋轉的基板W飛散的處理液或流落的處理液。此外,在罩杯30的底面形成有用以將接收的處理液排出的排出口(圖未示),該排出口連接至排出管(圖未示)。 The cup 30 is formed in a cylindrical shape and is provided at a position slightly in the center of the processing chamber 20. The support portion 40 and the rotation mechanism 50 are housed inside the cup 30. The upper part of the peripheral wall of the cup 30 is inclined inward, and is opened so that the to-be-processed surface Wa of the board | substrate W on the support part 40 may be exposed. The cup 30 receives the processing liquid scattered from the rotating substrate W or the processing liquid flowing down. In addition, a discharge port (not shown) for discharging the received processing liquid is formed on the bottom surface of the cup 30, and the discharge port is connected to a discharge pipe (not shown).
支持部40位於罩杯30內的略中央,以能在水平面內旋轉的方式設於旋轉機構50上。該支持部40例如稱為旋轉平台。支持部40具有複數支持構件41,由該等支持構件41將基板W以水平狀態支持。此外,基板W其被處理面Wa的中心,位於支持部40的旋轉軸上而被支持部40所支持,在平面內旋轉。 The support portion 40 is located at a slightly center in the cup 30 and is provided on the rotation mechanism 50 so as to be rotatable in a horizontal plane. This support part 40 is called a rotation stage, for example. The support unit 40 includes a plurality of support members 41, and the substrate W is supported by the support members 41 in a horizontal state. In addition, the center of the processing surface Wa of the substrate W is located on the rotation axis of the support portion 40 and is supported by the support portion 40 and rotates in a plane.
旋轉機構50設置成保持住支持部40,使該支持部40在水平面內旋轉。例如,旋轉機構50具有連結支持部40中央的旋轉軸及使該旋轉軸旋轉的的馬達等(圖都未示)等,藉由馬達的驅動而通過旋轉軸使支持部40旋轉。該旋轉機構50電連接至控制部80,藉由控制部80來控制其驅動。 The rotation mechanism 50 is provided to hold the support portion 40 and rotate the support portion 40 in a horizontal plane. For example, the rotation mechanism 50 includes a rotation shaft that connects the center of the support portion 40 and a motor (not shown) or the like that rotates the rotation shaft, and the support portion 40 is rotated by the rotation shaft by driving the motor. The rotating mechanism 50 is electrically connected to the control unit 80, and its driving is controlled by the control unit 80.
處理液供應部60具有:第1噴嘴61、第1噴嘴移動機構62、第1液供應部63。 The processing liquid supply unit 60 includes a first nozzle 61, a first nozzle moving mechanism 62, and a first liquid supply unit 63.
第1噴嘴61位於支持部40的上方,藉由第1噴嘴移動機構62以沿著支持部40上的基板W的被處理面Wa以擺動可能的方式形成。該第1噴嘴61,從對向於支持部40上的基板W的被處理面Wa的噴嘴位置,向該支持部40上的基板W的 被處理面Wa供應處理液(例如藥液、DIW)(詳細後述)。 The first nozzle 61 is located above the support portion 40, and is formed so as to be swingable along the processing surface Wa of the substrate W on the support portion 40 by the first nozzle moving mechanism 62. The first nozzle 61 is directed from the nozzle position facing the processing surface Wa of the substrate W on the supporting portion 40 toward the substrate W on the supporting portion 40. The to-be-processed surface Wa supplies a processing liquid (for example, a chemical liquid, DIW) (it mentions later in detail).
第1噴嘴移動機構62如圖1及圖2所示,具備:可動臂62a、臂擺動機構62b。可動臂62a其一端將第1噴嘴61保持住,藉由臂擺動機構62b來以水平支持。臂擺動機構62b,保持住在可動臂62a中與第1噴嘴61相反之側的一端,使該可動臂62a沿著支持部40上的基板W的被處理面Wa擺動。該臂擺動機構62b電連接至控制部80,藉由控制部80來控制其驅動。 As shown in FIGS. 1 and 2, the first nozzle moving mechanism 62 includes a movable arm 62 a and an arm swing mechanism 62 b. The one end of the movable arm 62a holds the first nozzle 61, and is supported horizontally by the arm swing mechanism 62b. The arm swing mechanism 62 b holds one end of the movable arm 62 a on the side opposite to the first nozzle 61, and swings the movable arm 62 a along the processing surface Wa of the substrate W on the support portion 40. The arm swing mechanism 62b is electrically connected to the control section 80, and its driving is controlled by the control section 80.
例如,藉由第1噴嘴移動機構62,第1噴嘴61能夠在對向於支持部40上的基板W的被處理面Wa的中心(中央)的噴嘴位置、與從支持部40上的基板W的被處理面Wa的上方退避而可將基板W搬入及搬出的待機位置之間作往復移動。此外,在圖1及圖2中,第1噴嘴61位於對向於支持部40上的基板W的被處理面Wa的中心的位置。 For example, with the first nozzle moving mechanism 62, the first nozzle 61 can be positioned at a nozzle position facing the center (center) of the processing surface Wa of the substrate W on the support portion 40 and from the substrate W on the support portion 40. The to-be-processed surface Wa is retracted from the standby position, and the substrate W can be moved back and forth between standby positions. In addition, in FIGS. 1 and 2, the first nozzle 61 is located at a position facing the center of the processing surface Wa of the substrate W on the support portion 40.
回到圖1,第1液供應部63對第1噴嘴61供應處理液。該第1液供應部63及第1噴嘴61經由配管63a所連接。第1液供應部63具備:儲留處理液的槽及成為驅動源的泵、調整供應量的成為調整閥的閥門(都未圖示)等。槽內的處理液,藉由泵所提供的力而被供應至第1噴嘴61。 Returning to FIG. 1, the first liquid supply unit 63 supplies the processing liquid to the first nozzle 61. The first liquid supply unit 63 and the first nozzle 61 are connected via a pipe 63a. The first liquid supply unit 63 includes a tank for storing a processing liquid, a pump serving as a driving source, and a valve (neither of which is shown) serving as an adjustment valve for adjusting a supply amount. The processing liquid in the tank is supplied to the first nozzle 61 by the force provided by the pump.
其中,第1液供應部63,例如,能夠切換作為處理液的藥液及DIW來使用。該第1液供應部63,具有儲留藥液的槽及儲留DIW的槽(都未圖示),將該等槽內的藥液或DIW經由配管63a供應至第1噴嘴61。 Among them, the first liquid supply unit 63 can switch between a chemical liquid and a DIW as a processing liquid, for example. The first liquid supply unit 63 includes a tank for storing a medicinal solution and a tank for storing DIW (both not shown), and supplies the medicinal solution or DIW in these tanks to the first nozzle 61 through a pipe 63a.
溶劑供應部70具有:第2噴嘴71、第2噴嘴移動機構72、第2液供應部73。 The solvent supply unit 70 includes a second nozzle 71, a second nozzle moving mechanism 72, and a second liquid supply unit 73.
第2噴嘴71位於支持部40的上方,藉由第2噴嘴移動機構72以沿著支持部40上的基板W的被處理面Wa以擺動可能的方式形成。該第2噴嘴71,從對向於支持部40上的基板W的被處理面Wa的噴嘴位置,向該支持部40上的基板W的被處理面Wa供應揮發性溶劑(例如IPA)。該揮發性溶劑為表面張力比處理液(例如DIW)還小的液體。 The second nozzle 71 is located above the support portion 40 and is formed by the second nozzle moving mechanism 72 so as to be swingable along the processing surface Wa of the substrate W on the support portion 40. The second nozzle 71 supplies a volatile solvent (for example, IPA) to the processing surface Wa of the substrate W on the support portion 40 from the nozzle position facing the processing surface Wa of the substrate W on the support portion 40. This volatile solvent is a liquid having a surface tension smaller than that of a treatment liquid (for example, DIW).
第2噴嘴移動機構72如圖1及圖2所示,與第1噴嘴移動機構62同樣具備:可動臂72a、臂擺動機構72b。可動臂72a其一端將第2噴嘴71保持住,藉由臂擺動機構72b來以水平支持。臂擺動機構72b,保持住在可動臂72a中與第2噴嘴71相反之側的一端,使該可動臂72a沿著支持部40上的基板W的被處理面Wa擺動。該臂擺動機構72b電連接至控制部80,藉由控制部80來控制其驅動。 As shown in FIGS. 1 and 2, the second nozzle moving mechanism 72 includes a movable arm 72 a and an arm swinging mechanism 72 b similarly to the first nozzle moving mechanism 62. The one end of the movable arm 72a holds the second nozzle 71, and is supported horizontally by the arm swing mechanism 72b. The arm swing mechanism 72 b holds one end of the movable arm 72 a on the side opposite to the second nozzle 71, and swings the movable arm 72 a along the processing surface Wa of the substrate W on the support portion 40. The arm swing mechanism 72b is electrically connected to the control section 80, and its driving is controlled by the control section 80.
例如,藉由第2噴嘴移動機構72,第2噴嘴71能夠在對向於支持部40上的基板W的被處理面Wa的中心(中央)的噴嘴位置、與從支持部40上的基板W的被處理面Wa的上方退避而可將基板W搬入及搬出的待機位置之間作往復移動。此外,圖1及圖2中,第2噴嘴71位於不與支持部40上的基板W的被處理面Wa的中心對向的待機位置(罩杯30之外的位置)。 For example, by the second nozzle moving mechanism 72, the second nozzle 71 can be positioned at the nozzle position facing the center (center) of the processing surface Wa of the substrate W on the support portion 40, and from the substrate W on the support portion 40. The to-be-processed surface Wa is retracted from the standby position, and the substrate W can be moved back and forth between standby positions. In addition, in FIGS. 1 and 2, the second nozzle 71 is located at a standby position (a position other than the cup 30) that does not face the center of the processing surface Wa of the substrate W on the support portion 40.
回到圖1,第2液供應部73對第2噴嘴71供應揮發性溶劑。該第2液供應部73及第2噴嘴71經由配管73a所連接。 第2液供應部73具備:儲留揮發性溶劑的槽及成為驅動源的泵、調整供應量的成為調整閥的閥門(都未圖示)等。槽內的揮發性溶劑,藉由泵所提供的力而被供應至第2噴嘴71。 Returning to FIG. 1, the second liquid supply unit 73 supplies a volatile solvent to the second nozzle 71. The second liquid supply unit 73 and the second nozzle 71 are connected via a pipe 73a. The second liquid supply unit 73 includes a tank for storing a volatile solvent, a pump serving as a driving source, a valve serving as a regulating valve (both not shown) that regulates the supply amount, and the like. The volatile solvent in the tank is supplied to the second nozzle 71 by the force provided by the pump.
其中,作為揮發性溶劑除了IPA以外,例如,可以使用乙醇等1價酒精類、或乙醚及乙基甲基醚等的醚類、或者碳酸乙烯等。 Among them, as the volatile solvent, in addition to IPA, for example, monovalent alcohols such as ethanol, ethers such as diethyl ether and ethyl methyl ether, or ethylene carbonate can be used.
控制部80具備:將各部集中控制的微電腦、記憶與基板處理有關的基板處理資訊及各種程式等的記憶部(圖都未示)。該控制部80基於基板處理資訊及各種程式,進行旋轉機構50所致的支持部40的旋轉動作及處理液供應部60所致的處理液的供應動作、溶劑供應部70所致的揮發性溶劑的供應動作等的控制。 The control unit 80 includes a microcomputer that collectively controls each unit, and a memory unit (not shown) that stores substrate processing information and various programs related to substrate processing. Based on the substrate processing information and various programs, the control section 80 performs the rotation operation of the support section 40 caused by the rotation mechanism 50, the processing liquid supply operation caused by the processing liquid supply section 60, and the volatile solvent caused by the solvent supply section 70. Control of supply operations, etc.
接著,參照圖3到圖6說明有關前述基板處理裝置10所進行的基板處理的流程。此外,以下作為一例,基板使用晶圓(直徑300mm),使用藥液及DIW作為處理液,使用IPA作為揮發性溶劑。又,支持部40的旋轉數及液供應時間、液供應位置等的處理條件雖預先設定於控制部80,但可以因應操作者而作任意變更。 Next, a flow of the substrate processing performed by the substrate processing apparatus 10 will be described with reference to FIGS. 3 to 6. In addition, as an example below, a wafer (300 mm in diameter) is used as a substrate, a chemical liquid and DIW are used as a processing liquid, and IPA is used as a volatile solvent. In addition, the processing conditions such as the number of rotations of the support section 40, the liquid supply time, and the liquid supply position are set in the control section 80 in advance, but can be arbitrarily changed according to the operator.
圖3為關於本實施形態的處理順序,圖6為關於比較例的處理順序。在該等圖3及圖6的各列的項目中,DIW供應位置為基板W的被處理面Wa上的供應DIW的位置。又, IPA供應位置為在基板W的被處理面Wa上供應IPA的位置。該等液供應位置的數值為從基板W的被處理面Wa的中心(Center=0mm)開始偏移(Offset)的位置。基板W的被處理面Wa的中心為基板W的旋轉中心。 FIG. 3 is a processing procedure regarding this embodiment, and FIG. 6 is a processing procedure regarding a comparative example. Among the items in each of the columns of FIG. 3 and FIG. 6, the DIW supply position is the position where the DIW is supplied on the processing surface Wa of the substrate W. also, The IPA supply position is a position where IPA is supplied on the processing surface Wa of the substrate W. The value of the liquid supply position is a position offset from the center (Center = 0 mm) of the processing surface Wa of the substrate W. The center of the processing surface Wa of the substrate W is the rotation center of the substrate W.
如圖3所示,基板處理工程在藥液處理後具有5個步驟(第1步驟到第5步驟)。在該等步驟前的藥液處理,首先,在支持部40上設定基板W,支持部40藉由旋轉機構50以預定的旋轉數(例如500rpm)旋轉。藉此,支持部40上的基板W也以預定的旋轉數旋轉。第1噴嘴61,從對向於旋轉的基板W的被處理面Wa的中心(0mm)的噴嘴位置,向基板W的被處理面Wa的中心以預定時間(例如數十秒)供應藥液。此外,第2噴嘴71位於不與基板W的被處理面Wa的中心對向的待機位置。 As shown in FIG. 3, the substrate processing process has five steps (the first step to the fifth step) after the chemical liquid processing. In the chemical solution processing before these steps, first, the substrate W is set on the support portion 40, and the support portion 40 is rotated by a predetermined number of rotations (for example, 500 rpm) by the rotation mechanism 50. Thereby, the board | substrate W on the support part 40 also rotates by a predetermined rotation number. The first nozzle 61 supplies a chemical solution to the center of the processing surface Wa of the substrate W from a nozzle position facing the center (0 mm) of the processing surface Wa of the substrate W for a predetermined time (for example, several tens of seconds). The second nozzle 71 is located at a standby position that does not face the center of the processing surface Wa of the substrate W.
從第1噴嘴61吐出的藥液,被供給至旋轉的支持部40上的基板W的被處理面Wa的中心,藉由基板W旋轉所造的離心力擴展至基板W的被處理面Wa的全體。藉此,在基板W的被處理面Wa上形成藥液的液膜,基板W的被處理面Wa被藥液所處理。 The chemical solution discharged from the first nozzle 61 is supplied to the center of the processing surface Wa of the substrate W on the rotating support portion 40, and the centrifugal force generated by the rotation of the substrate W is extended to the entire processing surface Wa of the substrate W. . Thereby, a liquid film of the chemical solution is formed on the processing surface Wa of the substrate W, and the processing surface Wa of the substrate W is processed by the chemical solution.
第1步驟為利用DIW的沖洗工程。該第1步驟中,接著前述預定時間的藥液處理,從第1噴嘴61對基板W的被處理面Wa以10秒間供應DIW。此時,DIW供應位置為基板W的被處理面Wa的中心(0mm),第1噴嘴61從與前述藥液處理相同位置,亦即對向於基板W的被處理面Wa的中心的噴嘴位置,對旋轉的基板W的被處理面Wa的中心供應 DIW。第1步驟中的基板W的旋轉數(支持部40的旋轉數)為500rpm。 The first step is a flushing process using DIW. In this first step, the DIW is supplied to the processing surface Wa of the substrate W from the first nozzle 61 to the processing surface Wa of the substrate W from the first nozzle 61 following the predetermined time of the chemical liquid processing. At this time, the DIW supply position is the center (0 mm) of the processing surface Wa of the substrate W, and the first nozzle 61 is from the same position as the aforementioned chemical liquid processing, that is, the nozzle position facing the center of the processing surface Wa of the substrate W To the center of the processing surface Wa of the rotating substrate W DIW. The number of rotations of the substrate W (the number of rotations of the support portion 40) in the first step was 500 rpm.
從第1噴嘴61吐出的DIW,被供給至旋轉的支持部40上的基板W的被處理面Wa的中心,藉由基板W旋轉所造的離心力擴展至基板W的被處理面Wa的全體。因應該DIW的擴展,先被供應的基板W的被處理面Wa上的藥液,從該被處理面Wa的外周排出。因此,支持部40上的基板W的被處理面Wa,藉由被由藥液置換成DIW的DIW液膜來覆蓋而洗淨。 The DIW discharged from the first nozzle 61 is supplied to the center of the processing surface Wa of the substrate W on the rotating support portion 40, and the centrifugal force generated by the rotation of the substrate W is extended to the entire processing surface Wa of the substrate W. In response to the expansion of the DIW, the chemical solution on the processing surface Wa of the substrate W supplied first is discharged from the periphery of the processing surface Wa. Therefore, the processing surface Wa of the substrate W on the support portion 40 is covered and washed with a DIW liquid film replaced with a DIW by a chemical solution.
此外,DIW被由第1液供應部63從藥液切換,被供應至第1噴嘴61。在該藥液與DIW的切換中,藥液與DIW被連續供應至第1噴嘴61。因此,基板W的被處理面Wa上的液膜不會中斷,在一連串的液處理中能抑制基板W的被處理面Wa的露出。 The DIW is switched from the chemical solution by the first liquid supply unit 63 and is supplied to the first nozzle 61. In the switching between the chemical solution and the DIW, the chemical solution and the DIW are continuously supplied to the first nozzle 61. Therefore, the liquid film on the processing surface Wa of the substrate W is not interrupted, and the exposure of the processing surface Wa of the substrate W can be suppressed during a series of liquid processing.
第2步驟為利用DIW及IPA的DIW+IPA工程(DIW+IPA包覆)。該第2步驟中,接著第1步驟,亦即以供應DIW的狀態,對基板W的被處理面Wa以1秒間供應IPA。此時,DIW供應位置為距離基板W的被處理面Wa的中心30mm的位置,IPA供應位置為基板W的被處理面Wa的中心(0mm)。也就是說,到IPA的供應開始時點為止,第1噴嘴61從與基板W的被處理面Wa的中心對向的噴嘴位置移動至對向於距離基板W的被處理面Wa的中心30mm的位置之噴嘴位置(第1移動),第2噴嘴71從待機位置移動至對向於基板W的被處理面Wa的中心的噴嘴位置。第2步驟中的 基板W的旋轉數與之前的第1步驟相同維持500rpm。 The second step is a DIW + IPA process (DIW + IPA coating) using DIW and IPA. In this second step, following the first step, that is, in a state of supplying DIW, IPA is supplied to the processing surface Wa of the substrate W within 1 second. At this time, the DIW supply position is 30 mm from the center of the processing surface Wa of the substrate W, and the IPA supply position is the center (0 mm) of the processing surface Wa of the substrate W. That is, the first nozzle 61 is moved from the nozzle position facing the center of the processing surface Wa of the substrate W to the position facing 30 mm from the center of the processing surface Wa of the substrate W until the start of the supply of the IPA. Nozzle position (first movement), the second nozzle 71 moves from the standby position to a nozzle position facing the center of the processing surface Wa of the substrate W. In step 2 The number of rotations of the substrate W was maintained at 500 rpm as in the first step.
其中,本實施形態中的前述30mm的DIW供應位置,設定成被供應至與第1噴嘴61距離30mm的DIW供應位置的DIW,擴展至旋轉的基板W上的被處理面Wa的中心為止的位置。藉此,第1噴嘴61即便不供應DIW至基板W的被處理面Wa的中心,而供應DIW至距離中心30mm的位置,基板W的被處理面Wa的中心附近也會被DIW的液膜所包覆。也就是說,即便DIW供應位置發生偏移,因為DIW也被供應至基板W的被處理面Wa的中心,包含基板W的被處理面Wa的中心附近的被處理面Wa的全體也會被DIW的液膜確實地包覆。因此,因為在一連串的液處理中能抑制基板W的被處理面Wa的露出,從能夠抑制乾燥不均等的乾燥不良這點來看是好的。 The DIW supply position of the aforementioned 30 mm in this embodiment is set to a position where the DIW supplied to the DIW supply position 30 mm away from the first nozzle 61 is extended to the position of the center of the processing surface Wa on the rotating substrate W. . Accordingly, even if the first nozzle 61 does not supply DIW to the center of the processing surface Wa of the substrate W, and supplies DIW to a position 30 mm away from the center, the vicinity of the center of the processing surface Wa of the substrate W will be covered by the DIW liquid film. Wrapped. That is, even if the DIW supply position is shifted, DIW is also supplied to the center of the processing surface Wa of the substrate W, and the entire processing surface Wa near the center of the processing surface Wa including the substrate W is also DIWed. The liquid film is surely covered. Therefore, since the exposure of the to-be-processed surface Wa of the board | substrate W can be suppressed during a series of liquid processes, it is good from the point of being able to suppress drying unevenness and uneven drying.
此外,第2步驟的DIW供應位置,雖然是距離基板W的被處理面Wa的中心30mm的位置,但這是中心附近的位置的一例。該中心附近的位置,例如,指的是除了中心以外,距離基板W的被處理面Wa的中心基板W的半徑1/2的距離範圍內的位置。在本實施形態中,用以將IPA供應至基板W的被處理面Wa的中心而移動的第2噴嘴71,至少要是在不會與第1噴嘴61衝突的位置。又,如同上述,考慮到防止乾燥不均等較佳。這種位置,會因液體的黏度及供應量、基板W的旋轉數等而變化,由實驗求得而設定至控制部80。 The DIW supply position in the second step is a position 30 mm from the center of the processing surface Wa of the substrate W, but this is an example of a position near the center. The position near the center means, for example, a position within a distance range of 1/2 of the radius of the center substrate W from the processing surface Wa of the substrate W except the center. In this embodiment, at least the second nozzle 71 for moving the supply of IPA to the center of the processing surface Wa of the substrate W is at a position where it does not collide with the first nozzle 61. As described above, it is preferable to prevent uneven drying. Such a position varies depending on the viscosity of the liquid, the supply amount of the liquid, the number of rotations of the substrate W, and the like, and is set to the control unit 80 by an experiment.
在第2步驟中,如圖4所示,第1噴嘴61,從對向於距 離基板W的被處理面Wa的中心30mm的位置的噴嘴位置(30mm),將DIW供應至距離基板W的被處理面Wa的中心30mm的位置。在該狀態下,第2噴嘴71,從對向於基板W的被處理面Wa的中心的噴嘴位置(0mm),供應IPA至基板W的被處理面Wa的中心。因此,以從第1噴嘴61對距離基板W的被處理面Wa的中心30mm的位置供應DIW的狀態,因為從第2噴嘴71吐出的IPA被供應至基板W的被處理面Wa的中心的DIW的液膜上,DIW及IPA因而重疊(DIW+IPA包覆)。此外,因為第1噴嘴61供應DIW至從基板W的被處理面Wa的中心偏離的位置(中心附近的位置),與供應DIW至被處理面Wa的中心相比,形成於被處理面Wa的中心的DIW的液膜厚度變薄。接著,被供應至基板W的被處理面Wa的DIW及IPA,藉由基板W旋轉所產生的離心力擴散至基板W的被處理面Wa的全體。 In the second step, as shown in FIG. 4, the first nozzle 61 is spaced from the opposite direction to the distance. The nozzle position (30 mm) from the center of the processing surface Wa of the substrate W is 30 mm from the center of the processing surface Wa of the substrate W. In this state, the second nozzle 71 supplies IPA to the center of the processing surface Wa of the substrate W from a nozzle position (0 mm) facing the center of the processing surface Wa of the substrate W. Therefore, the DIW is supplied at a position 30 mm from the center of the processing surface Wa of the substrate W from the first nozzle 61 because the IPA discharged from the second nozzle 71 is supplied to the DIW at the center of the processing surface Wa of the substrate W. On the liquid film, DIW and IPA overlap (DIW + IPA coating). In addition, since the first nozzle 61 supplies DIW to a position (a position near the center) that is deviated from the center of the processing surface Wa of the substrate W, it is formed on the processing surface Wa as compared to the position where the DIW is supplied to the center of the processing surface Wa. The liquid film thickness of the center DIW becomes thin. Next, the DIW and IPA supplied to the processing surface Wa of the substrate W are diffused to the entire processing surface Wa of the substrate W by the centrifugal force generated by the rotation of the substrate W.
回到圖3,第3步驟為利用DIW及IPA的DIW+IPA工程(DIW供應位置掃描)。該第3步驟中,接著第2步驟,以4秒間供應DIW及IPA,再來,在這4秒間將DIW供應位置從30mm的位置移動至200mm的位置(第2移動)。此時,IPA供應位置為與前述第2步驟相同的位置,也就是基板W的被處理面Wa的中心。此外,第3步驟的開始經過4秒後,停止DIW的供應。第3步驟中的基板W的旋轉數與之前的第2步驟相同維持500rpm。 Returning to FIG. 3, the third step is a DIW + IPA process (DIW supply location scan) using DIW and IPA. In this third step, following the second step, DIW and IPA are supplied in 4 seconds, and then, the DIW supply position is moved from a position of 30 mm to a position of 200 mm in this 4 second (second movement). At this time, the IPA supply position is the same position as in the aforementioned second step, that is, the center of the processing surface Wa of the substrate W. The DIW supply is stopped 4 seconds after the start of the third step. The rotation number of the substrate W in the third step was maintained at 500 rpm in the same manner as in the previous second step.
在第3步驟中,如圖5所示,第1噴嘴61,從對向於距離基板W的被處理面Wa的中心30mm的位置的噴嘴位置 (30mm),移動至超過基板W的被處理面Wa的外周的位置之噴嘴位置(200mm)。此時,第1噴嘴移動機構62,以第1噴嘴61對基板W的被處理面Wa供應DIW的狀態,使該第1噴嘴61從基板W的被處理面Wa的中心沿著向外的方向移動。藉此,DIW供應位置,亦即支持部40上的基板W的被處理面Wa上的供應處理液的處理液供應位置移動了。因此,第1噴嘴移動機構62,作為使該處理液供應位置沿著基板W的被處理面Wa的方向移動的位置移動部來作用。 In the third step, as shown in FIG. 5, the first nozzle 61 is positioned from the nozzle facing the position 30 mm from the center of the processing surface Wa of the substrate W. (30 mm), and moved to the nozzle position (200 mm) beyond the position of the outer periphery of the processing surface Wa of the substrate W. At this time, the first nozzle moving mechanism 62 supplies the DIW to the processing surface Wa of the substrate W in a state where the first nozzle 61 supplies the first nozzle 61 in an outward direction from the center of the processing surface Wa of the substrate W. mobile. Thereby, the DIW supply position, that is, the processing liquid supply position where the processing liquid is supplied on the processing surface Wa of the substrate W on the support portion 40 is moved. Therefore, the first nozzle moving mechanism 62 functions as a position moving section that moves the processing liquid supply position in the direction of the processing surface Wa of the substrate W.
其中,當對基板W的被處理面Wa供應IPA時,DIW供應位置從基板W的被處理面Wa的中心偏移,IPA的供應開始後,從基板W的被處理面Wa的中心沿著向外的方向移動。此時,因為DIW供應位置偏移基板W的被處理面Wa的中心,在基板W的被處理面Wa的中心附近,DIW的液膜會如同前述一樣變薄。因此,即便對基板W的被處理面Wa的中心供應IPA,也能抑制DIW的液膜阻礙IPA的擴展,容易使DIW置換成IPA。又,因DIW供應位置從基板W的被處理面Wa的中心沿著向外的方向移動,DIW的液量(液膜的厚度)從基板W的被處理面Wa的中心向外周漸漸地減少,促進了DIW從基板W的被處理面Wa的中心附近向外周的排出。藉此,DIW從基板W的被處理面Wa的中心向外周排出的時間變快,其結果,IPA向基板W的被處理面Wa的全體擴展的時間變快,提升了從DIW向IPA的置換效率。 Among them, when IPA is supplied to the processing surface Wa of the substrate W, the DIW supply position is shifted from the center of the processing surface Wa of the substrate W. After the supply of IPA starts, the center of the processing surface Wa of the substrate W is moved along the direction Move out of direction. At this time, because the DIW supply position is shifted from the center of the processed surface Wa of the substrate W, the liquid film of the DIW becomes thinner as described above near the center of the processed surface Wa of the substrate W. Therefore, even if IPA is supplied to the center of the processing surface Wa of the substrate W, it is possible to suppress the liquid film of the DIW from hindering the expansion of the IPA, and it is easy to replace the DIW with the IPA. In addition, since the DIW supply position moves outward from the center of the processing surface Wa of the substrate W, the liquid amount (thickness of the liquid film) of the DIW gradually decreases from the center of the processing surface Wa of the substrate W toward the outer periphery. The discharge of DIW from the vicinity of the center of the processing surface Wa of the substrate W to the periphery is promoted. As a result, the discharge time of the DIW from the center of the processing surface Wa of the substrate W to the outer periphery becomes faster. As a result, the time for the IPA to expand to the entire processing surface Wa of the substrate W becomes faster, which improves the replacement from DIW to IPA. effectiveness.
回到圖3,第4步驟為利用IPA的IPA工程。該第4步驟 中,接著第3步驟,在10秒間持續供應IPA。此時,DIW的供應停止。此外,第4步驟的開始經過10秒後,也停止IPA的供應。IPA供應位置為與前述第3步驟相同的位置,亦即基板W的被處理面Wa的中心。第2噴嘴71位於對向於基板W的被處理面Wa的中心的噴嘴位置,第1噴嘴61位於不與基板W的被處理面Wa對向的待機位置。也就是說,第3步驟或第4步驟中,第2噴嘴71雖停止於對向於基板W的被處理面Wa的中心的噴嘴位置,但第1噴嘴61從位於超過基板W的被處理面Wa的外周的位置之噴嘴位置(200mm)移動至待機位置。第4步驟中的基板W的旋轉數與之前的第3步驟相同維持500rpm。 Returning to Fig. 3, the fourth step is an IPA project using IPA. The 4th step Medium, followed by the third step, IPA was continuously supplied for 10 seconds. At this time, the supply of DIW stopped. In addition, after 10 seconds from the start of the fourth step, the supply of IPA was also stopped. The IPA supply position is the same position as in the aforementioned third step, that is, the center of the processing surface Wa of the substrate W. The second nozzle 71 is located at a nozzle position facing the center of the processing surface Wa of the substrate W, and the first nozzle 61 is located at a standby position not facing the processing surface Wa of the substrate W. That is, in the third step or the fourth step, although the second nozzle 71 is stopped at the nozzle position facing the center of the processing surface Wa of the substrate W, the first nozzle 61 is located from the processing surface that exceeds the substrate W. The nozzle position (200 mm) at the position on the outer periphery of Wa is moved to the standby position. The rotation number of the substrate W in the fourth step was maintained at 500 rpm in the same manner as in the previous third step.
此外,在前述第4步驟中,不供應DIW而僅供應IPA的供應時間(例如10秒),被設定成將進入基板W的被處理面Wa上的微細圖案間的隙間的處理液完全置換成IPA所需要的必要時間,亦即使IPA浸透至基板W的被處理面Wa上的圖案間所需的必要時間。 In the fourth step described above, the supply time (for example, 10 seconds) of supplying only IPA without supplying DIW is set to completely replace the processing liquid that enters the spaces between the fine patterns on the processing surface Wa of the substrate W with The necessary time required for the IPA is also the necessary time required for the IPA to penetrate between the patterns on the processing surface Wa of the substrate W.
第5步驟為將基板W乾燥的乾燥工程(Dry工程)。該第5步驟中,接著第4步驟,在20秒間持續使基板W旋轉,在20秒後使基板W的旋轉停止。IPA的供應停止,藉由該旋轉乾燥使基板W的被處理面Wa乾燥。此時,第1噴嘴61及第2噴嘴71位於不與基板W的被處理面Wa對向的待機位置。也就是說,在第5步驟中,但第2噴嘴71從對向於基板W的被處理面Wa的中心之噴嘴位置移動至待機位置。第5步驟中的基板W的旋轉數維持在比之前的第4步驟還快的 1200rpm。 The fifth step is a drying process (Dry process) for drying the substrate W. In this fifth step, following the fourth step, the substrate W is continuously rotated for 20 seconds, and the rotation of the substrate W is stopped after 20 seconds. The supply of IPA is stopped, and the to-be-processed surface Wa of the substrate W is dried by this spin drying. At this time, the first nozzle 61 and the second nozzle 71 are located in a standby position that does not face the processing surface Wa of the substrate W. That is, in the fifth step, the second nozzle 71 is moved from the nozzle position facing the center of the processing surface Wa of the substrate W to the standby position. The rotation number of the substrate W in the fifth step is maintained faster than that in the previous fourth step. 1200rpm.
根據前述基板處理工程,在第2步驟中,對基板W的被處理面Wa供應IPA時,藉由將DIW供應位置偏移基板W的被處理面Wa的中心,在基板W的被處理面Wa的中心附近的DIW的液膜會變薄。藉此,即便對基板W的被處理面Wa的中心供應IPA,因為也能抑制DIW的液膜阻礙IPA的擴展,容易使DIW置換成IPA,能夠將DIW置換成IPA的效率提升。 According to the aforementioned substrate processing process, in the second step, when IPA is supplied to the processing surface Wa of the substrate W, the DIW supply position is shifted from the center of the processing surface Wa of the substrate W to the processing surface Wa of the substrate W. The liquid film of DIW near the center becomes thinner. Accordingly, even if IPA is supplied to the center of the processing surface Wa of the substrate W, the liquid film of the DIW can inhibit the expansion of the IPA, and it is easy to replace the DIW with the IPA, and the efficiency of replacing the DIW with the IPA can be improved.
又,在第3步驟中,藉由進行DIW供應掃描,因為DIW供應位置從基板W的被處理面Wa的中心沿著向外的方向移動,DIW的液量從基板W的被處理面Wa的中心向外周漸漸地減少。藉此,促進了DIW從基板W的被處理面Wa的中心附近向外周的排出,因為抑制了DIW的液膜阻礙IPA的擴展,IPA向基板W的被處理面Wa的全體擴展的時間變快,提升了從DIW向IPA的置換效率。 In the third step, the DIW supply scan is performed because the DIW supply position moves from the center of the processing surface Wa of the substrate W in an outward direction, and the amount of DIW liquid flows from the processing surface Wa of the substrate W. The center gradually decreases toward the periphery. Thereby, the discharge of DIW from the vicinity of the center of the processing surface Wa of the substrate W to the periphery is promoted. Since the liquid film of the DIW is suppressed from hindering the expansion of the IPA, the time for the expansion of the IPA to the entire processing surface Wa of the substrate W becomes faster. , Improved the replacement efficiency from DIW to IPA.
其中,如圖6所示,在沒有進行DIW供應位置掃描的步驟之比較例中,從DIW向IPA的置換時間為20秒(第2步驟的5秒+第3步驟的15秒=20秒),在第1實施形態中為15秒(第2步驟的1秒+第3步驟的4秒+第4步驟的10秒=15秒)。因此,前述第1實施形態的置換時間與比較例的置換時間相比縮短了5秒。接著,因為設了進行DIW供應位置掃描的步驟,能夠使DIW向IPA的置換時間縮短。此外,DIW向IPA的置換時間,藉由一邊量測液體的水分濃度,一邊量測使水分濃度成為預定值以下或零(0)的時 間而得到。 Among them, as shown in FIG. 6, in a comparative example in which the scanning of the DIW supply position is not performed, the replacement time from DIW to IPA is 20 seconds (5 seconds in the second step + 15 seconds in the third step = 20 seconds). 15 seconds in the first embodiment (1 second in the second step + 4 seconds in the third step + 10 seconds in the fourth step = 15 seconds). Therefore, the replacement time of the first embodiment is shortened by 5 seconds compared to the replacement time of the comparative example. Next, since a step of scanning the DIW supply position is provided, it is possible to shorten the replacement time of the DIW to the IPA. In addition, the replacement time of DIW to IPA is measured by measuring the water concentration of the liquid when the water concentration becomes less than a predetermined value or zero (0) Get it from time to time.
如同以上說明,根據第1實施形態,以從第1噴嘴61對基板W的被處理面Wa的中心附近供應處理液(例如DIW),且從第2噴嘴71對基板W的被處理面Wa的中心供應揮發性溶劑(例如IPA)的狀態,使基板W的被處理面Wa的處理液供應位置從基板W的被處理面Wa的中心沿著向外的方向移動。藉此,處理液的液量從基板W的被處理面Wa的中心向外周漸漸地減少,促進了處理液從基板W的被處理面Wa的中心附近向外周的排出,因為抑制了處理液的液膜阻礙揮發性溶劑的擴展,揮發性溶劑向基板W的被處理面Wa的全體擴展的時間變快。藉此,能夠使基板W的被處理面Wa上的處理液置換成揮發性溶劑的置換效率提升。又,因為基板W的被處理面Wa上的處理液供應位置向基板W的外周移動,成為基板W的外周上確實存在液膜的狀態,能夠防止外周上的基板W的被處理面Wa的露出。在外周,周速比中心還快,因為離心力也強,因此液膜變得比中心還薄。也就是說,因為向基板W的外周供應處理液,基板W的外周的液膜變薄,能夠防止基板W的被處理面Wa的露出。 As described above, according to the first embodiment, the processing liquid (for example, DIW) is supplied near the center of the processing surface Wa of the substrate W from the first nozzle 61 and the processing surface Wa of the substrate W is supplied from the second nozzle 71. In a state where the center is supplied with a volatile solvent (for example, IPA), the processing liquid supply position of the processing surface Wa of the substrate W is moved from the center of the processing surface Wa of the substrate W in an outward direction. Thereby, the liquid amount of the processing liquid gradually decreases from the center of the processing surface Wa of the substrate W toward the outer periphery, and the discharge of the processing liquid from the vicinity of the center of the processing surface Wa of the substrate W toward the periphery is promoted, because the processing liquid is suppressed. The liquid film hinders the expansion of the volatile solvent, and the time for the volatile solvent to spread to the entire processing surface Wa of the substrate W becomes faster. Accordingly, the replacement efficiency of the processing liquid on the processing surface Wa of the substrate W with a volatile solvent can be improved. In addition, since the processing liquid supply position on the processing surface Wa of the substrate W is moved toward the outer periphery of the substrate W, a state where a liquid film does indeed exist on the outer periphery of the substrate W can be prevented from being exposed on the outer periphery of the substrate W. . On the periphery, the peripheral speed is faster than the center, and because the centrifugal force is also strong, the liquid film becomes thinner than the center. That is, since the processing liquid is supplied to the outer periphery of the substrate W, the liquid film on the outer periphery of the substrate W becomes thin, and it is possible to prevent the exposed surface Wa of the substrate W from being exposed.
有關第2實施形態參照圖7作說明。此外,在第2實施形態中僅說明與第1實施形態的相異點(基板處理工程的流程),省略其他說明。圖7的各列的項目與圖3及圖6一 樣。 The second embodiment will be described with reference to FIG. 7. In the second embodiment, only the differences from the first embodiment (the flow of the substrate processing process) will be described, and other descriptions will be omitted. The items of each column in FIG. 7 are the same as those in FIGS. 3 and 6. kind.
如圖7所示,關於第2實施形態的基板處理工程,在藥液處理後具有7個步驟(第1步驟到第7步驟)。該基板處理工程,除了第1實施形態的各工程(參照圖3)以外,在圖7所示的第4步驟,亦即在使DIW供應位置移動的DIW+IPA工程(DIW供應位置掃描)之前及之後,具有液膜確保工程(第3步驟及第5步驟)。 As shown in FIG. 7, the substrate processing process according to the second embodiment includes seven steps (first step to seventh step) after the chemical liquid processing. In addition to the processes of the first embodiment (see FIG. 3), this substrate processing process is performed in the fourth step shown in FIG. 7, that is, before the DIW + IPA process (DIW supply position scanning) to move the DIW supply position. And after that, there is a liquid film securing process (the third step and the fifth step).
在液膜確保工程中,藉由控制部80使基板W的旋轉數比前一個工程還低。控制部80,當在將DIW供應至基板W的被處理面Wa,且在以供應IPA至基板W的被處理面Wa的狀態持續預定時間(例如,前一個工程即第2步驟的1秒間或第4步驟的3秒間)時,控制旋轉機構50使得支持部40的旋轉數下降。例如,在第3步驟中,使第2步驟中的基板W的旋轉數500rpm下降至250rpm,在第5步驟中,使第4步驟中的基板W的旋轉數250rpm下降至100rpm。此外,在第6步驟中,使第5步驟中的基板W的旋轉數100rpm上升至500rpm,在第7步驟中,使第6步驟中的基板W的旋轉數500rpm上升至1200rpm。 In the liquid film securing process, the number of rotations of the substrate W is lowered by the control unit 80 than in the previous process. The control unit 80 continues to supply the DIW to the processed surface Wa of the substrate W for a predetermined period of time in a state where the IPA is supplied to the processed surface Wa of the substrate W (for example, 1 second in the previous step or the second step or At 3 seconds in the fourth step), the rotation mechanism 50 is controlled to reduce the number of rotations of the support portion 40. For example, in the third step, the number of rotations of the substrate W in the second step is reduced from 500 rpm to 250 rpm, and in the fifth step, the number of rotations of the substrate W in the fourth step is reduced from 250 rpm to 100 rpm. In the sixth step, the number of rotations of the substrate W in the fifth step is increased from 100 rpm to 500 rpm, and in the seventh step, the number of rotations of the substrate W in the sixth step is increased from 500 rpm to 1200 rpm.
根據該液膜確保工程,藉由使基板W的旋轉數比前一個工程還低,基板W的被處理面Wa上的液膜的厚度維持在所期望值,因此基板W的被處理面Wa的全體能被液膜確實地包覆。藉此,在一連的液處理中能確實地抑制基板W的被處理面Wa的露出。此外,在第5步驟中,能使IPA浸透基板W的被處理面Wa上的微細圖案間的間隙,能確實地將 進入微細圖案間的間隙裡的處理液置換成IPA。此外,根據各種條件,如第1實施形態而不需要液膜確保工程也是可能的。 According to this liquid film securing process, the thickness of the liquid film on the processing surface Wa of the substrate W is maintained at a desired value by making the rotation number of the substrate W lower than that of the previous process. Therefore, the entire processing surface Wa of the substrate W is maintained. Can be surely covered with liquid film. Thereby, the exposure of the to-be-processed surface Wa of the board | substrate W can be suppressed reliably in one continuous liquid process. In addition, in the fifth step, the IPA can penetrate the gap between the fine patterns on the processing surface Wa of the substrate W, and the The treatment liquid entering the gap between the fine patterns was replaced with IPA. In addition, depending on various conditions, such as the first embodiment, no liquid film securing process is required.
如以上的說明,根據第2實施形態,可以得到與第1實施形態一樣的效果。又,因為設有液膜確保工程,基板W的被處理面Wa的全體被液膜確實地包覆,因為抑制了在一連的液處理中能抑制基板W的被處理面Wa的露出,能夠抑制乾燥不均等的乾燥不良。 As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. In addition, since the liquid film securing process is provided, the entire processing surface Wa of the substrate W is surely covered with the liquid film, because the exposure of the processing surface Wa of the substrate W can be suppressed in a series of liquid processing, and the suppression can be suppressed. Poor drying due to uneven drying.
有關第3實施形態參照圖8及圖9作說明。此外,在第3實施形態中僅說明與第1實施形態的相異點(因應IPA的擴展的DIW供應位置掃描),省略其他說明。 The third embodiment will be described with reference to FIGS. 8 and 9. In addition, in the third embodiment, only the differences from the first embodiment (DIW supply position scanning in response to the expansion of the IPA) will be described, and other descriptions will be omitted.
如圖8所示,在第3實施形態的DIW供應位置掃描(DIW+IPA工程)中,第1噴嘴61亦即DIW供應位置,因應從第2噴嘴71對基板W的被處理面Wa的中心供應的IPA的擴展(IPA所擴展的區域R1),從基板W的被處理面Wa的中心沿著向外的方向移動。 As shown in FIG. 8, in the DIW supply position scanning (DIW + IPA process) of the third embodiment, the first nozzle 61, that is, the DIW supply position, corresponds to the center of the processing surface Wa of the substrate W from the second nozzle 71. The extension of the supplied IPA (the area R1 in which the IPA is extended) moves from the center of the processing surface Wa of the substrate W in an outward direction.
第1噴嘴移動機構62,例如,因應從第2噴嘴71對基板W的被處理面Wa供應的IPA的擴展速度(流速),使DIW供應位置從基板W的被處理面Wa的中心沿著向外的方向移動。此時,較佳為使DIW供應位置移動,而使得DIW供應位置在區域R1內且位於該區域R1的外周附近(邊界附近)。IPA的擴展速度由實驗求得,基於該擴展速度在控 制部80設定第1噴嘴61的移動速度。接著,控制部80基於該第1噴嘴61的移動速度的設定值來控制第1噴嘴移動機構62,調整第1噴嘴61的移動速度。 The first nozzle moving mechanism 62 moves the DIW supply position from the center of the processing surface Wa of the substrate W in accordance with the expansion speed (flow rate) of the IPA supplied from the second nozzle 71 to the processing surface Wa of the substrate W, for example. Move out of direction. At this time, it is preferable to move the DIW supply position so that the DIW supply position is within the region R1 and located near the outer periphery (near the boundary) of the region R1. The expansion speed of IPA is obtained by experiments. The control unit 80 sets the moving speed of the first nozzle 61. Next, the control unit 80 controls the first nozzle moving mechanism 62 based on the set value of the moving speed of the first nozzle 61 and adjusts the moving speed of the first nozzle 61.
因此,根據因應IPA的擴展的DIW供應位置掃描,藉由因應IPA的擴展而使DIW供應位置從基板W的被處理面Wa的中心沿著向外的方向移動,抑制DIW阻礙IPA的擴展,IPA平穩地在基板W的被處理面Wa的全體擴展。因此,因為,IPA向基板W的被處理面Wa的全體擴展的時間變快,能夠使處理液置換成揮發性溶劑的置換效率更加提升。 Therefore, according to the scanning of the DIW supply position according to the expansion of IPA, the DIW supply position is moved from the center of the processing surface Wa of the substrate W in the outward direction in response to the expansion of IPA. The entire surface to be processed Wa of the substrate W is spread smoothly. Therefore, the time taken for the IPA to spread to the entire processing surface Wa of the substrate W becomes faster, and the replacement efficiency of the processing liquid with the volatile solvent can be further improved.
此外,當基板W具有親水性時,DIW因為親於基板W的被處理面Wa而擴展,雖粒子難以殘留,但基板W具有疏水性時,DIW被基板W的被處理面Wa排斥同時擴展,因為流動變得不均勻,基板W的被處理面Wa的一部分露出而產生乾燥不均,粒子容易殘留於基板W的被處理面Wa。不過,因為DIW供應位置因應IPA的擴展而從基板W的被處理面Wa的中心沿著向外的方向移動,基板W的被處理面Wa上供應DIW的面積漸漸地變小,IPA平穩地在基板W的被處理面Wa的全體擴展。藉此,因為能抑制基板W的被處理面Wa的一部分露出所造成的乾燥不均,能夠抑制在具有疏水性的基板W上殘留粒子。 In addition, when the substrate W is hydrophilic, the DIW expands because it is close to the processed surface Wa of the substrate W. Although the particles are difficult to remain, but when the substrate W is hydrophobic, the DIW is repelled and expanded by the processed surface Wa of the substrate W. Because the flow becomes non-uniform, a part of the processing surface Wa of the substrate W is exposed and uneven drying occurs, and particles easily remain on the processing surface Wa of the substrate W. However, because the DIW supply position moves from the center of the processing surface Wa of the substrate W in the outward direction in response to the expansion of the IPA, the area for supplying DIW on the processing surface Wa of the substrate W gradually becomes smaller, and the IPA is stable at The entire processing surface Wa of the substrate W is expanded. Thereby, unevenness in drying due to the exposure of a part of the processing surface Wa of the substrate W can be suppressed, and particles can be prevented from remaining on the substrate W having a hydrophobic property.
其中,例如,作為具有親水性的基板W有其被處理面Wa被氧化膜所包覆的矽基板。另一方面,作為具有疏水性的基板W有其被處理面Wa不被包覆的矽基板,亦即矽露 出的矽基板。在該露出矽的矽基板中,通常,DIW(H2O)殘留於被處理面Wa,在被處理面Wa進行氧化產生水印而殘留。不過,因為DIW供應位置因應IPA的擴展而從基板W的被處理面Wa的中心沿著向外的方向移動,如同前述,因為IPA平穩地在基板W的被處理面Wa的全體擴展,DIW從基板W的被處理面Wa上迅速地追上。藉此,因為能抑制DIW的殘留所造成的水印產生,能夠抑制在具有疏水性的基板W上殘留粒子。 Among them, for example, as the substrate W having a hydrophilic property, there is a silicon substrate whose surface to be processed Wa is covered with an oxide film. On the other hand, as the substrate W having a hydrophobic property, there is a silicon substrate whose surface to be processed Wa is not coated, that is, a silicon substrate on which silicon is exposed. In the silicon substrate on which silicon is exposed, DIW (H 2 O) generally remains on the processing surface Wa, and the processing surface Wa is oxidized to generate a watermark and remains. However, because the DIW supply position moves from the center of the processing surface Wa of the substrate W in the outward direction in response to the expansion of the IPA, as described above, because IPA expands smoothly over the entire processing surface Wa of the substrate W, the DIW starts The processed surface Wa of the substrate W quickly catches up. This makes it possible to suppress the occurrence of watermarks caused by the residual of DIW, and it is possible to suppress the residual of particles on the substrate W having hydrophobicity.
其中,參照圖9說明進行第3實施形態的順序處理(有噴嘴掃描=有DIW供應位置掃描)的情形、與進行比較例的順序處理(無噴嘴掃描=無DIW供應位置掃描)的情形之中,對具有疏水性的基板W的粒子(水印)殘留程度。 Among them, the case of performing the sequential processing (with nozzle scanning = scanning with DIW supply position) of the third embodiment and the case of performing sequential processing (without nozzle scanning = scanning without DIW supply position) according to the third embodiment will be described with reference to FIG. 9. , The degree to which particles (watermarks) remain on the substrate W having hydrophobicity.
在圖9中,左側的基板W為第3實施形態的順序處理所造成的結果,右側的基板W為比較例的順序處理所造成的結果。基板W的被處理面Wa內的黑點表示粒子也表示其殘留位置。此外,粒子的測定利用通常的粒子計數器進行。 In FIG. 9, the substrate W on the left side is the result of the sequential processing of the third embodiment, and the substrate W on the right side is the result of the sequential processing of the comparative example. The black dots on the processing surface Wa of the substrate W indicate that the particles also indicate their remaining positions. The measurement of the particles was performed using a general particle counter.
如圖9所示,左側的基板W的被處理面Wa相較於右側的基板W的被處理面Wa,其黑點非常少。也就是說,基於第3實施形態的順序處理(有噴嘴掃描)而進行基板處理的情形,相較於比較例的順序處理(無噴嘴掃描),粒子數能減少為1/5~1/4程度,能抑制對具有疏水性的基板W的粒子的附著。 As shown in FIG. 9, compared with the processed surface Wa of the substrate W on the right, the processed surface Wa of the left substrate W has very few black spots. That is, when the substrate processing is performed based on the sequential processing (with nozzle scanning) of the third embodiment, the number of particles can be reduced to 1/5 to 1/4 compared to the sequential processing (without nozzle scanning) of the comparative example. To the extent that adhesion to particles of the substrate W having a hydrophobic property can be suppressed.
如以上的說明,根據第3實施形態,可以得到與第1實施形態一樣的效果。又,藉由因應揮發性溶劑(例如 IPA)的擴展而使第1噴嘴61的處理液供應位置(例如DIW供應位置)從基板W的被處理面Wa的中心沿著向外的方向移動,能夠抑制處理液阻礙揮發性溶劑的擴展,因為揮發性溶劑平穩地在基板W的被處理面Wa的全體擴展,能夠更加提升從處理液向揮發性溶劑的置換效率。再來,因為能抑制對具有疏水性的基板W的粒子殘留,能夠抑制基板W的污染。 As described above, according to the third embodiment, the same effects as those of the first embodiment can be obtained. Also, by responding to volatile solvents such as The expansion of the IPA) causes the processing liquid supply position (for example, the DIW supply position) of the first nozzle 61 to move outward from the center of the processing surface Wa of the substrate W, which can suppress the processing liquid from hindering the expansion of the volatile solvent. Since the volatile solvent smoothly spreads over the entire processing surface Wa of the substrate W, the replacement efficiency from the processing liquid to the volatile solvent can be further improved. Furthermore, since it is possible to suppress particles remaining on the substrate W having hydrophobicity, contamination of the substrate W can be suppressed.
有關第4實施形態參照圖10作說明。此外,在第4實施形態中僅說明與第1實施形態的相異點(噴嘴直線移動機構),省略其他說明。 The fourth embodiment will be described with reference to FIG. 10. In the fourth embodiment, only the differences from the first embodiment (nozzle linear movement mechanism) will be described, and other descriptions will be omitted.
如圖10所示,第4實施形態的第1噴嘴移動機構62,除了第1實施形態的可動臂62a、臂擺動機構62b以外,還具有噴嘴直線移動機構62c。該第1噴嘴移動機構62藉由噴嘴直線移動機構62c使第1噴嘴61及第2噴嘴71個別移動。因此,在第4實施形態中,不需要第1實施形態的第2噴嘴移動機構72,將其移除。 As shown in FIG. 10, the first nozzle moving mechanism 62 of the fourth embodiment includes a nozzle linear moving mechanism 62c in addition to the movable arm 62a and the arm swinging mechanism 62b of the first embodiment. In the first nozzle moving mechanism 62, the first nozzle 61 and the second nozzle 71 are individually moved by the nozzle linear moving mechanism 62c. Therefore, in the fourth embodiment, the second nozzle moving mechanism 72 of the first embodiment is not needed and removed.
噴嘴直線移動機構62c設於延伸可動臂62a,將第1噴嘴61及第2噴嘴71支持住,使被支持的第1噴嘴61及第2噴嘴71沿著支持部40上的基板W的被處理面Wa在一直線上移動。藉此,能使支持部40上的基板W的被處理面Wa上的液供應位置(DIW供應位置及IPA供應位置)移動。因此,噴嘴直線移動機構62c作為使處理液供應位置沿著基板W 的被處理面Wa的方向移動的位置移動部來作用。 The nozzle linear movement mechanism 62 c is provided on the movable arm 62 a and supports the first nozzle 61 and the second nozzle 71, and the supported first nozzle 61 and the second nozzle 71 are processed along the substrate W on the support portion 40. Surface Wa moves on a straight line. Thereby, the liquid supply position (DIW supply position and IPA supply position) on the to-be-processed surface Wa of the substrate W on the support part 40 can be moved. Therefore, the nozzle linear movement mechanism 62c serves as a processing liquid supply position along the substrate W. The position moving part that moves in the direction of the processed surface Wa functions.
其中,作為噴嘴直線移動機構62c,例如,可以使用線性馬達式的移動機構或輸送螺桿式的移動機構等各種移動機構。該噴嘴直線移動機構62c電連接至控制部80(參照圖1),藉由控制部80來控制其驅動。 Among these, as the nozzle linear movement mechanism 62c, various movement mechanisms, such as a linear motor type movement mechanism and a conveyance screw type movement mechanism, can be used, for example. This nozzle linear movement mechanism 62 c is electrically connected to the control unit 80 (see FIG. 1), and its driving is controlled by the control unit 80.
如以上的說明,根據第4實施形態,可以得到與第1實施形態一樣的效果。又,使第1噴嘴61及第2噴嘴71藉由共通於其等的噴嘴直線移動機構62c來移動,因為可以移除第1實施形態的第2噴嘴移動機構72,與第1實施形態相比能夠使裝置構成簡略化。 As described above, according to the fourth embodiment, the same effects as those of the first embodiment can be obtained. In addition, the first nozzle 61 and the second nozzle 71 are moved by the nozzle linear moving mechanism 62c which is common to them, because the second nozzle moving mechanism 72 of the first embodiment can be removed, compared with the first embodiment. The device configuration can be simplified.
有關第5實施形態參照圖11作說明。此外,在第5實施形態中僅說明與第1實施形態的相異點(噴嘴頭擺動機構),省略其他說明。 A fifth embodiment will be described with reference to FIG. 11. In the fifth embodiment, only the differences from the first embodiment (nozzle head swing mechanism) will be described, and other descriptions will be omitted.
如圖11所示,第5實施形態的第1噴嘴移動機構62,除了第1實施形態的可動臂62a及臂擺動機構62b以外,還具有噴嘴頭擺動機構62d。該第1噴嘴移動機構62藉由噴嘴頭擺動機構62d來擺動第1噴嘴61。 As shown in FIG. 11, the first nozzle moving mechanism 62 of the fifth embodiment includes a nozzle head swing mechanism 62d in addition to the movable arm 62a and the arm swing mechanism 62b of the first embodiment. The first nozzle moving mechanism 62 swings the first nozzle 61 by a nozzle head swing mechanism 62d.
噴嘴頭擺動機構62d設置於延伸的可動臂62a的前端,亦即與可動臂62a上的臂擺動機構62b相反側的端部。該噴嘴頭擺動機構62d支持住第1噴嘴61的一端,將支持的第1噴嘴61的一端作為旋轉中心使第1噴嘴61旋轉而擺動。藉此,能使支持部40上的基板W的被處理面Wa上的液供應位 置(DIW供應位置)移動。因此,噴嘴頭擺動機構62d作為使處理液供應位置沿著基板W的被處理面Wa的方向移動的位置移動部來作用。 The nozzle head swing mechanism 62d is provided at the front end of the extended movable arm 62a, that is, the end on the opposite side to the arm swing mechanism 62b on the movable arm 62a. This nozzle head swing mechanism 62 d supports one end of the first nozzle 61, and swings the first nozzle 61 by rotating the supported one end of the first nozzle 61 as a rotation center. Thereby, the liquid supply level on the processing surface Wa of the substrate W on the support portion 40 can be set. (DIW supply position) moves. Therefore, the nozzle head swing mechanism 62d functions as a position moving part that moves the processing liquid supply position in the direction of the processing surface Wa of the substrate W.
其中,例如,噴嘴頭擺動機構62d具有可改變旋轉方向的馬達(圖未示)。該馬達的旋轉軸與第1噴嘴61的一端呈直角連結。藉此,第1噴嘴61的一端被作為旋轉中心,而使得第1噴嘴61能夠旋轉。該噴嘴頭擺動機構62d電連接至控制部80(參照圖1),藉由控制部80來控制其驅動。 Among them, for example, the nozzle head swing mechanism 62d has a motor (not shown) that can change the rotation direction. The rotation shaft of this motor is connected to one end of the first nozzle 61 at a right angle. Thereby, one end of the first nozzle 61 is used as a rotation center, so that the first nozzle 61 can be rotated. The nozzle head swing mechanism 62 d is electrically connected to the control unit 80 (see FIG. 1), and its driving is controlled by the control unit 80.
如以上的說明,根據第5實施形態,可以得到與第1實施形態一樣的效果。又,與第1實施形態及第4實施形態相比,能夠將使處理液供應位置移動時的第1噴嘴61的移動範圍縮小。 As described above, according to the fifth embodiment, the same effect as that of the first embodiment can be obtained. In addition, compared with the first and fourth embodiments, the moving range of the first nozzle 61 when the processing liquid supply position is moved can be reduced.
有關第6實施形態參照圖12作說明。此外,在第6實施形態中僅說明與第1實施形態的相異點(噴嘴頭擺動機構),省略其他說明。 A sixth embodiment will be described with reference to FIG. 12. In the sixth embodiment, only the differences from the first embodiment (nozzle head swing mechanism) will be described, and other descriptions will be omitted.
如圖12所示,第6實施形態中,移除第1實施形態的第1噴嘴移動機構62,設置噴嘴頭擺動機構62d。該噴嘴頭擺動機構62d擺動第1噴嘴61。 As shown in FIG. 12, in the sixth embodiment, the first nozzle moving mechanism 62 of the first embodiment is removed, and a nozzle head swing mechanism 62d is provided. The nozzle head swing mechanism 62d swings the first nozzle 61.
噴嘴頭擺動機構62d固定設置於罩杯30的周壁的上端部。該噴嘴頭擺動機構62d支持住第1噴嘴61的一端,將支持的第1噴嘴61的一端作為旋轉中心使第1噴嘴61旋轉而擺 動。藉此,能使支持部40上的基板W的被處理面Wa上的處理液供應位置(DIW供應位置)移動。因此,噴嘴頭擺動機構62d作為使處理液供應位置沿著基板W的被處理面Wa的方向移動的位置移動部來作用。此外,從噴嘴61吐出的處理液,相對於支持部40上的基板W的被處理面Wa從傾斜方向供應。 The nozzle head swing mechanism 62 d is fixedly provided on the upper end portion of the peripheral wall of the cup 30. This nozzle head swing mechanism 62d supports one end of the first nozzle 61, and uses the one end of the supported first nozzle 61 as a rotation center to rotate the first nozzle 61 and swing it. move. Thereby, the processing liquid supply position (DIW supply position) on the processing surface Wa of the substrate W on the support part 40 can be moved. Therefore, the nozzle head swing mechanism 62d functions as a position moving part that moves the processing liquid supply position in the direction of the processing surface Wa of the substrate W. The processing liquid discharged from the nozzle 61 is supplied from the oblique direction with respect to the processing surface Wa of the substrate W on the support portion 40.
其中,例如,噴嘴頭擺動機構62d與第5實施形態一樣,具有可改變旋轉方向的馬達(圖未示),該馬達的旋轉軸與第1噴嘴61的一端呈直角連結。藉此,第1噴嘴61的一端被作為旋轉中心,而使得第1噴嘴61能夠旋轉。該噴嘴頭擺動機構62d電連接至控制部80(參照圖1),藉由控制部80來控制其驅動。 Among them, for example, the nozzle head swing mechanism 62 d has a motor (not shown) that can change the direction of rotation, as in the fifth embodiment, and the rotation axis of the motor is connected to one end of the first nozzle 61 at a right angle. Thereby, one end of the first nozzle 61 is used as a rotation center, so that the first nozzle 61 can be rotated. The nozzle head swing mechanism 62 d is electrically connected to the control unit 80 (see FIG. 1), and its driving is controlled by the control unit 80.
如以上的說明,根據第6實施形態,可以得到與第1實施形態一樣的效果。又,因為可以移除第1及第4、第5實施形態的第1噴嘴移動機構62,與第1及第4、第5實施形態相比能夠使裝置構成簡略化。再來,因為少了使支持部40上的基板W的被處理面Wa的上方移動的第1可動臂62a,能夠抑制從第1可動臂62a落下的粒子(灰塵及金屬粉等的雜質)附著於支持部40上的基板W的被處理面Wa,而能夠抑制基板W的污染。 As described above, according to the sixth embodiment, the same effects as those of the first embodiment can be obtained. In addition, the first nozzle moving mechanism 62 of the first, fourth, and fifth embodiments can be removed, and the device configuration can be simplified compared with the first, fourth, and fifth embodiments. Furthermore, since the first movable arm 62a that moves above the processing surface Wa of the substrate W on the support portion 40 is eliminated, it is possible to suppress the particles (dust, impurities such as metal powder) from falling from the first movable arm 62a from being attached. The to-be-processed surface Wa of the substrate W on the support part 40 can suppress contamination of the substrate W.
有關第7實施形態參照圖13作說明。此外,在第7實施形態中僅說明與第1實施形態的相異點(噴嘴吐出量的變 更控制),省略其他說明。 A seventh embodiment will be described with reference to FIG. 13. In addition, in the seventh embodiment, only the differences from the first embodiment (variation of the nozzle discharge amount) will be described. More control), and other descriptions are omitted.
如圖13所示,第7實施形態中,移除第1實施形態的第1噴嘴移動機構62,噴嘴61固定設置於罩杯30的周壁的上端部。又,控制部80控制第1液供應部63,而調整從第1噴嘴61吐出的處理液(例如DIW)之吐出量。藉此,能使支持部40上的基板W的被處理面Wa上的處理液供應位置(DIW供應位置)移動。例如,控制部80,使得來自第1噴嘴61的處理液的吐出量,處理液供應位置成為基板W的被處理面Wa的中心之吐出量開始漸漸地減少,使處理液供應位置從基板W的被處理面Wa的中心沿著向外的方向漸漸移動。因此,控制部80及第1液供應部63,作為使該處理液供應位置沿著基板W的被處理面Wa的方向移動的位置移動部來作用。此外,從噴嘴61吐出的處理液,相對於支持部40上的基板W的被處理面Wa從傾斜方向供應。 As shown in FIG. 13, in the seventh embodiment, the first nozzle moving mechanism 62 of the first embodiment is removed, and the nozzle 61 is fixed to the upper end portion of the peripheral wall of the cup 30. In addition, the control unit 80 controls the first liquid supply unit 63 to adjust the discharge amount of the processing liquid (for example, DIW) discharged from the first nozzle 61. Thereby, the processing liquid supply position (DIW supply position) on the processing surface Wa of the substrate W on the support part 40 can be moved. For example, the control unit 80 gradually decreases the discharge amount of the processing liquid from the first nozzle 61 and the discharge amount of the processing liquid supply position to the center of the processing surface Wa of the substrate W, so that the processing liquid supply position is reduced from that of the substrate W. The center of the processing surface Wa gradually moves in an outward direction. Therefore, the control part 80 and the 1st liquid supply part 63 function as a position moving part which moves this processing liquid supply position in the direction of the to-be-processed surface Wa of the board | substrate W. The processing liquid discharged from the nozzle 61 is supplied from the oblique direction with respect to the processing surface Wa of the substrate W on the support portion 40.
如以上的說明,根據第7實施形態,可以得到與第1實施形態一樣的效果。又,因為可以移除第1及第4、第5實施形態的第1噴嘴移動機構62,與第1及第4、第5實施形態相比能夠使裝置構成簡略化。再來,因為可以移除第6實施形態的噴嘴頭擺動機構62d,與第6實施形態相比能夠使裝置構成簡略化。又,因為少了使支持部40上的基板W的被處理面Wa的上方移動的第1可動臂62a,能夠抑制從第1可動臂62a落下的粒子(灰塵及金屬粉等)附著於支持部40上的基板W的被處理面Wa,而能夠抑制基板W的污染。 As described above, according to the seventh embodiment, the same effects as those of the first embodiment can be obtained. In addition, the first nozzle moving mechanism 62 of the first, fourth, and fifth embodiments can be removed, and the device configuration can be simplified compared with the first, fourth, and fifth embodiments. Furthermore, since the nozzle head swing mechanism 62d of the sixth embodiment can be removed, the device configuration can be simplified compared to the sixth embodiment. In addition, since the first movable arm 62a that moves the processed surface Wa of the substrate W on the support portion 40 is eliminated, it is possible to suppress particles (dust, metal powder, etc.) falling from the first movable arm 62a from being attached to the support portion The to-be-processed surface Wa of the substrate W on 40 can suppress contamination of the substrate W.
前述各實施形中,除了第7實施形態以外,雖從第1噴嘴61對基板W的被處理面Wa的處理液吐出量也可以維持一定,但不限於此,例如,處理液供應位置沿著基板W的被處理面Wa從被處理面Wa的中心沿著向外的方向因應移動,在抑制基板W的被處理面Wa的露出的同時,從第1噴嘴61向基板W的被處理面Wa的處理液的吐出量,亦即將向基板W的被處理面Wa的處理液的供應量漸漸地或者階段性地減少也可以。藉此,能夠抑制處理液阻礙揮發性溶劑的擴展,因為揮發性溶劑平穩地在基板W的被處理面Wa的全體擴展,能夠更加提升從處理液向揮發性溶劑的置換效率。又,藉由在抑制基板W的被處理面Wa的露出的同時,將向基板W的被處理面Wa的處理液的供應量漸漸地以階段性減少,因為基板W的被處理面Wa上所存在的處理液變少,能夠確實地使從處理液向揮發性溶劑的置換效率提升。此外,處理液的供應量在前述減少時,也是在未露出基板W的被處理面Wa的程度的供應量以上。 In each of the foregoing embodiments, in addition to the seventh embodiment, the amount of the processing liquid to be discharged from the first nozzle 61 to the processing surface Wa of the substrate W can be maintained constant, but is not limited thereto. For example, the processing liquid supply position is along The processing surface Wa of the substrate W is moved in the outward direction from the center of the processing surface Wa, while suppressing the exposure of the processing surface Wa of the substrate W, and from the first nozzle 61 to the processing surface Wa of the substrate W. The discharge amount of the processing liquid may be gradually or stepwise decreased, that is, the supply amount of the processing liquid to the processing surface Wa of the substrate W may be gradually or gradually reduced. This can prevent the processing liquid from hindering the expansion of the volatile solvent, because the volatile solvent smoothly spreads over the entire processing surface Wa of the substrate W, and the replacement efficiency from the processing liquid to the volatile solvent can be further improved. In addition, while suppressing the exposure of the processing surface Wa of the substrate W, the supply amount of the processing liquid to the processing surface Wa of the substrate W is gradually reduced because the processing surface Wa of the substrate W is gradually reduced. There is less processing liquid, and it is possible to surely improve the replacement efficiency from the processing liquid to the volatile solvent. In addition, when the supply amount of the processing liquid is reduced as described above, the supply amount of the processing liquid is also greater than the supply amount to the extent that the processing surface Wa of the substrate W is not exposed.
此外,在前述各實施形態中,雖在乾燥工程中不使用加熱源,但不限於此,例如,利用加熱支持部40上的基板W的被處理面Wa的加熱部也可以。作為該加熱部,例如,可以利用對支持部40上的基板W的被處理面Wa照射光而加熱的照射部。藉由該照射部將基板W的被處理面Wa瞬間加熱,能產生利登弗羅斯特現象(Leidenfrost phenomenon)(液體的液珠化)使基板W迅速乾燥。也就是說,將基 板W瞬間加熱,與基板W的被處理面Wa上的圖案接觸的揮發性溶劑瞬間氣化,基板W的被處理面Wa上的其他部分的揮發性溶劑立即液珠化(液珠化現象)。這樣被生成的液珠,會因基板W的旋轉產生的離心力而從基板W上飛散,使基板W乾燥。 In each of the foregoing embodiments, the heating source is not used in the drying process, but the invention is not limited to this. For example, the heating portion of the processing surface Wa of the substrate W on the heating support portion 40 may be used. As this heating portion, for example, an irradiation portion that irradiates light to the processed surface Wa of the substrate W on the support portion 40 and heats it can be used. The irradiated portion instantly heats the processing surface Wa of the substrate W, thereby causing a Leidenfrost phenomenon (liquid beading of the liquid) to rapidly dry the substrate W. That is, the base The plate W is instantaneously heated, and the volatile solvent in contact with the pattern on the processed surface Wa of the substrate W is instantaneously vaporized, and the volatile solvent of other parts on the processed surface Wa of the substrate W is immediately beaded (liquid bead phenomenon). . The liquid beads thus generated are scattered from the substrate W by the centrifugal force generated by the rotation of the substrate W, and the substrate W is dried.
此外,在前述各實施形態中,雖不使第1噴嘴61及第2噴嘴71在上下方向(升降方向)移動,但不限於此,使之藉由上下移動機構(升降機構)在上下方向移動也可以。例如,對支持部40上的基板W的被處理面Wa供應液時,將第1噴嘴61或第2噴嘴71降下而使其接近支持部40上的基板W的被處理面Wa。另一方面,使第1噴嘴61或第2噴嘴71移動至待機位置時,將第1噴嘴61或第2噴嘴71上升,而從支持部40上的基板W的被處理面Wa遠離。此時,第1噴嘴61或第2噴嘴71從供應位置向待機位置(或從待機位置向供應位置)移動時,上升至不會碰到罩杯30的位置。此外,為了避免第1噴嘴61及第2噴嘴71與罩杯30之間的接觸,將第1噴嘴61或第2噴嘴71從供應位置移動至待機位置(或從待機位置至供應位置)的移動中,使第1噴嘴61或第2噴嘴71上升也可以。 In each of the foregoing embodiments, although the first nozzle 61 and the second nozzle 71 are not moved in the vertical direction (elevating direction), the present invention is not limited to this, and is moved in the vertical direction by the vertical moving mechanism (elevating mechanism) Yes. For example, when the liquid is supplied to the processing surface Wa of the substrate W on the support portion 40, the first nozzle 61 or the second nozzle 71 is lowered to approach the processing surface Wa of the substrate W on the support portion 40. On the other hand, when the first nozzle 61 or the second nozzle 71 is moved to the standby position, the first nozzle 61 or the second nozzle 71 is lifted away from the processing surface Wa of the substrate W on the support portion 40. At this time, when the first nozzle 61 or the second nozzle 71 is moved from the supply position to the standby position (or from the standby position to the supply position), it is raised to a position where it does not touch the cup 30. In addition, in order to avoid contact between the first nozzle 61 and the second nozzle 71 and the cup 30, the first nozzle 61 or the second nozzle 71 is moved from the supply position to the standby position (or from the standby position to the supply position). Alternatively, the first nozzle 61 or the second nozzle 71 may be raised.
又,在上述實施形態中,說明了進行DIW供應位置掃描時,使DIW供應位置從中心附近的一例即30mm的位置,移動至超過基板的外周的200mm的位置,之後,使DIW的供應停止之例。不過,並不限於此,例如,將DIW的供應停止位置作為基板的外周緣也可以。若是300mm的 晶圓的話,為距離晶圓的中心150mm的位置。 Furthermore, in the above-mentioned embodiment, when the DIW supply position scanning is performed, the DIW supply position is moved from a position near the center, that is, a position of 30 mm to a position exceeding 200 mm on the outer periphery of the substrate, and then the supply of the DIW is stopped example. However, the present invention is not limited to this. For example, the supply stop position of the DIW may be the outer peripheral edge of the substrate. If it is 300mm In the case of a wafer, the position is 150 mm from the center of the wafer.
以上,雖已說明了本發明的幾個實施形態,但該等實施形態僅作為例示,並沒有要限定本發明的範圍。該等新穎的實施形態,也可以利用於其他各種形態來實施,在不脫離發明要旨的範圍內,可以進行各種省略、置換、變更。該等實施形態及其變形,在包含於發明的範圍及要旨中的同時,也包含申請專利範圍中所記載之發明的均等範圍。 Although several embodiments of the present invention have been described above, these embodiments are merely examples and are not intended to limit the scope of the present invention. These novel embodiments can also be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and modifications are included in the scope and gist of the invention, as well as the equivalent scope of the invention described in the scope of patent application.
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