TWI655034B - Substrate processing device and substrate processing method - Google Patents

Abstract

Provided are a substrate processing apparatus and a substrate processing method capable of improving the replacement efficiency of a processing liquid on a processing surface of a substrate with a volatile solvent. A substrate processing apparatus (10) according to an embodiment includes a first nozzle (61) for supplying a processing liquid to a processing surface (Wa) of a rotating substrate (W), and a processing surface (Wa) of a rotating substrate (W). A second nozzle (71) for supplying a volatile solvent in the center of the substrate; and a state in which the processing liquid is supplied from the first nozzle (61) to the center of the surface (Wa) for processing of the substrate (W). The processing liquid supply position on the processing surface (Wa) moves from the center of the processing surface (Wa) of the substrate (W) to a position near the center, and faces the processing surface of the substrate (W) from the first nozzle (61). The processing liquid is supplied from a position near the center of (Wa), and a state in which a volatile solvent is supplied from the second nozzle (71) to the center of the processing surface (Wa) of the substrate (W) is used as a process for supplying the processing liquid from the substrate The first nozzle moving mechanism (62) that functions as a position moving part in which the center of the processing surface (Wa) moves in an outward direction.

Description

Substrate processing device and substrate processing method

Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method.

The substrate processing device is used in semiconductor and liquid crystal panel manufacturing processes to process the processed surface of a substrate such as a wafer and a liquid crystal substrate with a chemical solution, and to rinse the processed surface of the substrate processed with the chemical solution with a rinse solution. A device for drying the substrate processed by the rinse solution. In this drying process, with the recent increase in the volume of semiconductors and the miniaturization of high-capacity, problems such as patterns on the edges of memory cells and gates may be broken. This is caused by the interval and structure between the patterns, the surface tension of the washing liquid, and the like.

Among them, for the purpose of suppressing the deterioration of the aforementioned pattern, it has been proposed to use a volatile solvent (such as IPA: 2-propanol, Isopropyl alcohol) substrate drying method. This substrate drying method is a method of drying a substrate by replacing a processing liquid on a processing surface of the substrate with a volatile solvent, and is used in a mass production factory or the like. In this replacement process, in order to avoid uneven drying due to uneven drying, it is necessary to cover the processing surface of the substrate with a liquid film and cover the substrate with a liquid film. The treatment liquid on the treated surface was replaced with a volatile solvent.

However, in the replacement process, it is difficult to cover the processing surface of the substrate with a liquid film and quickly replace the processing liquid on the processing surface of the substrate with a volatile solvent. For example, the substrate is rotated horizontally to the center of the processed surface of the substrate (for example, a circular substrate means the center, and a rectangular substrate means the intersection of diagonal lines. The same applies hereinafter). To the state where the processing liquid is supplied, a volatile solvent is supplied from directly above the center of the processing surface of the substrate. Next, a few seconds after the supply of the volatile solvent was started, the supply of the processing liquid was stopped, and the processing liquid on the processing surface of the substrate was replaced with the volatile solvent. At this time, the liquid film on the processing surface of the substrate is not interrupted, and the processing surface of the substrate is covered with the liquid film.

However, in the aforementioned replacement process, the processing liquid is supplied to the center of the processing surface of the substrate within a few seconds after the start of the supply of the volatile solvent. Therefore, the supply of the processing liquid prevents the volatile solvent supplied to the center of the processed surface of the substrate from spreading to the entire processed surface of the substrate, that is, the supply of the processing liquid prevents the expansion of the volatile solvent. Therefore, it is difficult to quickly replace the processing liquid on the processing surface of the substrate with a volatile solvent, and it takes time until the processing liquid is replaced with a volatile solvent. Therefore, it is desired to improve the replacement efficiency of replacing the processing liquid on the processing surface of the substrate with a volatile solvent.

The problem to be solved by the present invention is to provide a substrate capable of improving the replacement efficiency of a processing liquid on a processed surface of a substrate with a volatile solvent. Plate processing device and substrate processing method.

A substrate processing apparatus according to an embodiment of the present invention includes a rotation mechanism for rotating a substrate having a processing surface in a plane, a first nozzle for supplying a processing liquid to a processing surface of the substrate rotated by the rotation mechanism, and a rotation mechanism. A second nozzle that supplies a volatile solvent to the center of the processed surface of the rotating substrate; and a state in which the processing liquid is supplied from the first nozzle to the center of the processed surface of the substrate; The liquid supply position is moved from the center of the processed surface of the substrate to a position near the center, and the processing liquid is supplied from a position near the center of the processed surface of the substrate from the first nozzle to the processing surface of the substrate from the second nozzle. In a state where the volatile solvent is supplied from the center, the processing liquid supply position moves the position moving part in the outward direction from the center of the processing surface of the substrate.

A substrate processing method according to an embodiment of the present invention includes a process of rotating a substrate having a processing surface in a plane by a rotation mechanism, and supplying a processing liquid from a first nozzle to a center of a processing surface of the substrate rotated by the rotation mechanism. The state in which the processing liquid is supplied from the first nozzle to the center of the processing surface of the substrate, and the processing liquid supply position for supplying the processing liquid from the processing surface of the substrate is moved from the processing surface of the substrate by the position moving part. The first movement process in which the center is moved to a position near the center; the processing liquid is supplied from the first nozzle to a position near the center of the processed surface of the substrate, and the processed surface of the substrate rotated by the rotating mechanism is supplied from the second nozzle. A process of supplying a volatile solvent from the center of the substrate; a state in which the processing liquid is supplied from a position near the center of the processing surface of the substrate from the first nozzle to the center of the processing surface of the substrate from the second nozzle; Process liquid supply position by position shift The second moving process in which the moving part moves outward from the center of the processed surface of the substrate.

According to the substrate processing apparatus or the substrate processing method of the aforementioned embodiment, it is possible to improve the replacement efficiency of the processing liquid on the processing surface of the substrate with a volatile solvent.

10‧‧‧ substrate processing equipment

50‧‧‧ rotating mechanism

61‧‧‧The first nozzle

62‧‧‧The first nozzle moving mechanism

62a‧‧‧movable arm

62b‧‧‧arm swing mechanism

62c‧‧‧Nozzle linear movement mechanism

62d‧‧‧Nozzle head swing mechanism

63‧‧‧The first liquid supply department

71‧‧‧ 2nd nozzle

80‧‧‧Control Department

W‧‧‧ substrate

Wa‧‧‧ treated surface

20‧‧‧Processing Room

30‧‧‧cup

40‧‧‧Support Department

41‧‧‧ supporting components

60‧‧‧ Treatment liquid supply department

70‧‧‧ Solvent Supply Department

63a‧‧‧Piping

73a‧‧‧Piping

72‧‧‧ 2nd nozzle moving mechanism

73‧‧‧The second liquid supply department

72a‧‧‧ movable arm

72b‧‧‧arm swing mechanism

R1‧‧‧ area

1 is a diagram showing a schematic configuration of a substrate processing apparatus according to a first embodiment.

FIG. 2 is a plan view showing a part of the substrate processing apparatus according to the first embodiment.

FIG. 3 is a diagram illustrating a substrate processing process according to the first embodiment.

FIG. 4 is a diagram for explaining one process of the substrate processing process according to the first embodiment.

FIG. 5 is a diagram for explaining one process of the substrate processing process according to the first embodiment.

FIG. 6 is a diagram illustrating a comparative example of a substrate processing process according to the first embodiment.

FIG. 7 is a diagram for explaining a substrate processing process according to the second embodiment.

FIG. 8 is a diagram for explaining one process of a substrate processing process according to the third embodiment.

[Fig. 9] A diagram for explaining the particle removal effect according to the third embodiment Illustration.

10 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a fourth embodiment.

11 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a fifth embodiment.

12 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a sixth embodiment.

13 is a diagram showing a schematic configuration of a part of a substrate processing apparatus according to a seventh embodiment.

<First Embodiment>

The first embodiment will be described with reference to FIGS. 1 to 6.

(Basic constitution)

As shown in FIG. 1, the substrate processing apparatus 10 according to the first embodiment includes a processing chamber 20, a cup 30, a support section 40, a rotation mechanism 50, a processing liquid supply section 60, a solvent supply section 70, and a control section 80.

The processing chamber 20 is a processing block for processing a substrate W having a processing surface Wa. The processing chamber 20 is formed in, for example, a box shape such as a rectangular parallelepiped or a rectangular parallelepiped, and houses a cup 30, a support portion 40, a rotation mechanism 50, and the like. In the processing chamber 20, there is a vertical laminar flow (downflow) formed by the clean air, and thus the cleanliness in the processing chamber 20 is maintained. In addition, inactive gas such as N ₂ is supplied in the processing chamber 20, and the oxygen concentration in the processing chamber 20 is suppressed.

The cup 30 is formed in a cylindrical shape and is provided at a position slightly in the center of the processing chamber 20. The support portion 40 and the rotation mechanism 50 are housed inside the cup 30. The upper part of the peripheral wall of the cup 30 is inclined inward, and is opened so that the to-be-processed surface Wa of the board | substrate W on the support part 40 may be exposed. The cup 30 receives the processing liquid scattered from the rotating substrate W or the processing liquid flowing down. In addition, a discharge port (not shown) for discharging the received processing liquid is formed on the bottom surface of the cup 30, and the discharge port is connected to a discharge pipe (not shown).

The support portion 40 is located at a slightly center in the cup 30 and is provided on the rotation mechanism 50 so as to be rotatable in a horizontal plane. This support part 40 is called a rotation stage, for example. The support unit 40 includes a plurality of support members 41, and the substrate W is supported by the support members 41 in a horizontal state. In addition, the center of the processing surface Wa of the substrate W is located on the rotation axis of the support portion 40 and is supported by the support portion 40 and rotates in a plane.

The rotation mechanism 50 is provided to hold the support portion 40 and rotate the support portion 40 in a horizontal plane. For example, the rotation mechanism 50 includes a rotation shaft that connects the center of the support portion 40 and a motor (not shown) or the like that rotates the rotation shaft, and the support portion 40 is rotated by the rotation shaft by driving the motor. The rotating mechanism 50 is electrically connected to the control unit 80, and its driving is controlled by the control unit 80.

The processing liquid supply unit 60 includes a first nozzle 61, a first nozzle moving mechanism 62, and a first liquid supply unit 63.

The first nozzle 61 is located above the support portion 40, and is formed so as to be swingable along the processing surface Wa of the substrate W on the support portion 40 by the first nozzle moving mechanism 62. The first nozzle 61 is directed from the nozzle position facing the processing surface Wa of the substrate W on the supporting portion 40 toward the substrate W on the supporting portion 40. The to-be-processed surface Wa supplies a processing liquid (for example, a chemical liquid, DIW) (it mentions later in detail).

As shown in FIGS. 1 and 2, the first nozzle moving mechanism 62 includes a movable arm 62 a and an arm swing mechanism 62 b. The one end of the movable arm 62a holds the first nozzle 61, and is supported horizontally by the arm swing mechanism 62b. The arm swing mechanism 62 b holds one end of the movable arm 62 a on the side opposite to the first nozzle 61, and swings the movable arm 62 a along the processing surface Wa of the substrate W on the support portion 40. The arm swing mechanism 62b is electrically connected to the control section 80, and its driving is controlled by the control section 80.

For example, with the first nozzle moving mechanism 62, the first nozzle 61 can be positioned at a nozzle position facing the center (center) of the processing surface Wa of the substrate W on the support portion 40 and from the substrate W on the support portion 40. The to-be-processed surface Wa is retracted from the standby position, and the substrate W can be moved back and forth between standby positions. In addition, in FIGS. 1 and 2, the first nozzle 61 is located at a position facing the center of the processing surface Wa of the substrate W on the support portion 40.

Returning to FIG. 1, the first liquid supply unit 63 supplies the processing liquid to the first nozzle 61. The first liquid supply unit 63 and the first nozzle 61 are connected via a pipe 63a. The first liquid supply unit 63 includes a tank for storing a processing liquid, a pump serving as a driving source, and a valve (neither of which is shown) serving as an adjustment valve for adjusting a supply amount. The processing liquid in the tank is supplied to the first nozzle 61 by the force provided by the pump.

Among them, the first liquid supply unit 63 can switch between a chemical liquid and a DIW as a processing liquid, for example. The first liquid supply unit 63 includes a tank for storing a medicinal solution and a tank for storing DIW (both not shown), and supplies the medicinal solution or DIW in these tanks to the first nozzle 61 through a pipe 63a.

The solvent supply unit 70 includes a second nozzle 71, a second nozzle moving mechanism 72, and a second liquid supply unit 73.

The second nozzle 71 is located above the support portion 40 and is formed by the second nozzle moving mechanism 72 so as to be swingable along the processing surface Wa of the substrate W on the support portion 40. The second nozzle 71 supplies a volatile solvent (for example, IPA) to the processing surface Wa of the substrate W on the support portion 40 from the nozzle position facing the processing surface Wa of the substrate W on the support portion 40. This volatile solvent is a liquid having a surface tension smaller than that of a treatment liquid (for example, DIW).

As shown in FIGS. 1 and 2, the second nozzle moving mechanism 72 includes a movable arm 72 a and an arm swinging mechanism 72 b similarly to the first nozzle moving mechanism 62. The one end of the movable arm 72a holds the second nozzle 71, and is supported horizontally by the arm swing mechanism 72b. The arm swing mechanism 72 b holds one end of the movable arm 72 a on the side opposite to the second nozzle 71, and swings the movable arm 72 a along the processing surface Wa of the substrate W on the support portion 40. The arm swing mechanism 72b is electrically connected to the control section 80, and its driving is controlled by the control section 80.

For example, by the second nozzle moving mechanism 72, the second nozzle 71 can be positioned at the nozzle position facing the center (center) of the processing surface Wa of the substrate W on the support portion 40, and from the substrate W on the support portion 40. The to-be-processed surface Wa is retracted from the standby position, and the substrate W can be moved back and forth between standby positions. In addition, in FIGS. 1 and 2, the second nozzle 71 is located at a standby position (a position other than the cup 30) that does not face the center of the processing surface Wa of the substrate W on the support portion 40.

Returning to FIG. 1, the second liquid supply unit 73 supplies a volatile solvent to the second nozzle 71. The second liquid supply unit 73 and the second nozzle 71 are connected via a pipe 73a. The second liquid supply unit 73 includes a tank for storing a volatile solvent, a pump serving as a driving source, a valve serving as a regulating valve (both not shown) that regulates the supply amount, and the like. The volatile solvent in the tank is supplied to the second nozzle 71 by the force provided by the pump.

Among them, as the volatile solvent, in addition to IPA, for example, monovalent alcohols such as ethanol, ethers such as diethyl ether and ethyl methyl ether, or ethylene carbonate can be used.

The control unit 80 includes a microcomputer that collectively controls each unit, and a memory unit (not shown) that stores substrate processing information and various programs related to substrate processing. Based on the substrate processing information and various programs, the control section 80 performs the rotation operation of the support section 40 caused by the rotation mechanism 50, the processing liquid supply operation caused by the processing liquid supply section 60, and the volatile solvent caused by the solvent supply section 70. Control of supply operations, etc.

(Substrate Processing Engineering)

Next, a flow of the substrate processing performed by the substrate processing apparatus 10 will be described with reference to FIGS. 3 to 6. In addition, as an example below, a wafer (300 mm in diameter) is used as a substrate, a chemical liquid and DIW are used as a processing liquid, and IPA is used as a volatile solvent. In addition, the processing conditions such as the number of rotations of the support section 40, the liquid supply time, and the liquid supply position are set in the control section 80 in advance, but can be arbitrarily changed according to the operator.

FIG. 3 is a processing procedure regarding this embodiment, and FIG. 6 is a processing procedure regarding a comparative example. Among the items in each of the columns of FIG. 3 and FIG. 6, the DIW supply position is the position where the DIW is supplied on the processing surface Wa of the substrate W. also, The IPA supply position is a position where IPA is supplied on the processing surface Wa of the substrate W. The value of the liquid supply position is a position offset from the center (Center = 0 mm) of the processing surface Wa of the substrate W. The center of the processing surface Wa of the substrate W is the rotation center of the substrate W.

As shown in FIG. 3, the substrate processing process has five steps (the first step to the fifth step) after the chemical liquid processing. In the chemical solution processing before these steps, first, the substrate W is set on the support portion 40, and the support portion 40 is rotated by a predetermined number of rotations (for example, 500 rpm) by the rotation mechanism 50. Thereby, the board | substrate W on the support part 40 also rotates by a predetermined rotation number. The first nozzle 61 supplies a chemical solution to the center of the processing surface Wa of the substrate W from a nozzle position facing the center (0 mm) of the processing surface Wa of the substrate W for a predetermined time (for example, several tens of seconds). The second nozzle 71 is located at a standby position that does not face the center of the processing surface Wa of the substrate W.

The chemical solution discharged from the first nozzle 61 is supplied to the center of the processing surface Wa of the substrate W on the rotating support portion 40, and the centrifugal force generated by the rotation of the substrate W is extended to the entire processing surface Wa of the substrate W. . Thereby, a liquid film of the chemical solution is formed on the processing surface Wa of the substrate W, and the processing surface Wa of the substrate W is processed by the chemical solution.

The first step is a flushing process using DIW. In this first step, the DIW is supplied to the processing surface Wa of the substrate W from the first nozzle 61 to the processing surface Wa of the substrate W from the first nozzle 61 following the predetermined time of the chemical liquid processing. At this time, the DIW supply position is the center (0 mm) of the processing surface Wa of the substrate W, and the first nozzle 61 is from the same position as the aforementioned chemical liquid processing, that is, the nozzle position facing the center of the processing surface Wa of the substrate W To the center of the processing surface Wa of the rotating substrate W DIW. The number of rotations of the substrate W (the number of rotations of the support portion 40) in the first step was 500 rpm.

The DIW discharged from the first nozzle 61 is supplied to the center of the processing surface Wa of the substrate W on the rotating support portion 40, and the centrifugal force generated by the rotation of the substrate W is extended to the entire processing surface Wa of the substrate W. In response to the expansion of the DIW, the chemical solution on the processing surface Wa of the substrate W supplied first is discharged from the periphery of the processing surface Wa. Therefore, the processing surface Wa of the substrate W on the support portion 40 is covered and washed with a DIW liquid film replaced with a DIW by a chemical solution.

The DIW is switched from the chemical solution by the first liquid supply unit 63 and is supplied to the first nozzle 61. In the switching between the chemical solution and the DIW, the chemical solution and the DIW are continuously supplied to the first nozzle 61. Therefore, the liquid film on the processing surface Wa of the substrate W is not interrupted, and the exposure of the processing surface Wa of the substrate W can be suppressed during a series of liquid processing.

The second step is a DIW + IPA process (DIW + IPA coating) using DIW and IPA. In this second step, following the first step, that is, in a state of supplying DIW, IPA is supplied to the processing surface Wa of the substrate W within 1 second. At this time, the DIW supply position is 30 mm from the center of the processing surface Wa of the substrate W, and the IPA supply position is the center (0 mm) of the processing surface Wa of the substrate W. That is, the first nozzle 61 is moved from the nozzle position facing the center of the processing surface Wa of the substrate W to the position facing 30 mm from the center of the processing surface Wa of the substrate W until the start of the supply of the IPA. Nozzle position (first movement), the second nozzle 71 moves from the standby position to a nozzle position facing the center of the processing surface Wa of the substrate W. In step 2 The number of rotations of the substrate W was maintained at 500 rpm as in the first step.

The DIW supply position of the aforementioned 30 mm in this embodiment is set to a position where the DIW supplied to the DIW supply position 30 mm away from the first nozzle 61 is extended to the position of the center of the processing surface Wa on the rotating substrate W. . Accordingly, even if the first nozzle 61 does not supply DIW to the center of the processing surface Wa of the substrate W, and supplies DIW to a position 30 mm away from the center, the vicinity of the center of the processing surface Wa of the substrate W will be covered by the DIW liquid film. Wrapped. That is, even if the DIW supply position is shifted, DIW is also supplied to the center of the processing surface Wa of the substrate W, and the entire processing surface Wa near the center of the processing surface Wa including the substrate W is also DIWed. The liquid film is surely covered. Therefore, since the exposure of the to-be-processed surface Wa of the board | substrate W can be suppressed during a series of liquid processes, it is good from the point of being able to suppress drying unevenness and uneven drying.

The DIW supply position in the second step is a position 30 mm from the center of the processing surface Wa of the substrate W, but this is an example of a position near the center. The position near the center means, for example, a position within a distance range of 1/2 of the radius of the center substrate W from the processing surface Wa of the substrate W except the center. In this embodiment, at least the second nozzle 71 for moving the supply of IPA to the center of the processing surface Wa of the substrate W is at a position where it does not collide with the first nozzle 61. As described above, it is preferable to prevent uneven drying. Such a position varies depending on the viscosity of the liquid, the supply amount of the liquid, the number of rotations of the substrate W, and the like, and is set to the control unit 80 by an experiment.

In the second step, as shown in FIG. 4, the first nozzle 61 is spaced from the opposite direction to the distance. The nozzle position (30 mm) from the center of the processing surface Wa of the substrate W is 30 mm from the center of the processing surface Wa of the substrate W. In this state, the second nozzle 71 supplies IPA to the center of the processing surface Wa of the substrate W from a nozzle position (0 mm) facing the center of the processing surface Wa of the substrate W. Therefore, the DIW is supplied at a position 30 mm from the center of the processing surface Wa of the substrate W from the first nozzle 61 because the IPA discharged from the second nozzle 71 is supplied to the DIW at the center of the processing surface Wa of the substrate W. On the liquid film, DIW and IPA overlap (DIW + IPA coating). In addition, since the first nozzle 61 supplies DIW to a position (a position near the center) that is deviated from the center of the processing surface Wa of the substrate W, it is formed on the processing surface Wa as compared to the position where the DIW is supplied to the center of the processing surface Wa. The liquid film thickness of the center DIW becomes thin. Next, the DIW and IPA supplied to the processing surface Wa of the substrate W are diffused to the entire processing surface Wa of the substrate W by the centrifugal force generated by the rotation of the substrate W.

Returning to FIG. 3, the third step is a DIW + IPA process (DIW supply location scan) using DIW and IPA. In this third step, following the second step, DIW and IPA are supplied in 4 seconds, and then, the DIW supply position is moved from a position of 30 mm to a position of 200 mm in this 4 second (second movement). At this time, the IPA supply position is the same position as in the aforementioned second step, that is, the center of the processing surface Wa of the substrate W. The DIW supply is stopped 4 seconds after the start of the third step. The rotation number of the substrate W in the third step was maintained at 500 rpm in the same manner as in the previous second step.

In the third step, as shown in FIG. 5, the first nozzle 61 is positioned from the nozzle facing the position 30 mm from the center of the processing surface Wa of the substrate W. (30 mm), and moved to the nozzle position (200 mm) beyond the position of the outer periphery of the processing surface Wa of the substrate W. At this time, the first nozzle moving mechanism 62 supplies the DIW to the processing surface Wa of the substrate W in a state where the first nozzle 61 supplies the first nozzle 61 in an outward direction from the center of the processing surface Wa of the substrate W. mobile. Thereby, the DIW supply position, that is, the processing liquid supply position where the processing liquid is supplied on the processing surface Wa of the substrate W on the support portion 40 is moved. Therefore, the first nozzle moving mechanism 62 functions as a position moving section that moves the processing liquid supply position in the direction of the processing surface Wa of the substrate W.

Among them, when IPA is supplied to the processing surface Wa of the substrate W, the DIW supply position is shifted from the center of the processing surface Wa of the substrate W. After the supply of IPA starts, the center of the processing surface Wa of the substrate W is moved along the direction Move out of direction. At this time, because the DIW supply position is shifted from the center of the processed surface Wa of the substrate W, the liquid film of the DIW becomes thinner as described above near the center of the processed surface Wa of the substrate W. Therefore, even if IPA is supplied to the center of the processing surface Wa of the substrate W, it is possible to suppress the liquid film of the DIW from hindering the expansion of the IPA, and it is easy to replace the DIW with the IPA. In addition, since the DIW supply position moves outward from the center of the processing surface Wa of the substrate W, the liquid amount (thickness of the liquid film) of the DIW gradually decreases from the center of the processing surface Wa of the substrate W toward the outer periphery. The discharge of DIW from the vicinity of the center of the processing surface Wa of the substrate W to the periphery is promoted. As a result, the discharge time of the DIW from the center of the processing surface Wa of the substrate W to the outer periphery becomes faster. As a result, the time for the IPA to expand to the entire processing surface Wa of the substrate W becomes faster, which improves the replacement from DIW to IPA. effectiveness.

Returning to Fig. 3, the fourth step is an IPA project using IPA. The 4th step Medium, followed by the third step, IPA was continuously supplied for 10 seconds. At this time, the supply of DIW stopped. In addition, after 10 seconds from the start of the fourth step, the supply of IPA was also stopped. The IPA supply position is the same position as in the aforementioned third step, that is, the center of the processing surface Wa of the substrate W. The second nozzle 71 is located at a nozzle position facing the center of the processing surface Wa of the substrate W, and the first nozzle 61 is located at a standby position not facing the processing surface Wa of the substrate W. That is, in the third step or the fourth step, although the second nozzle 71 is stopped at the nozzle position facing the center of the processing surface Wa of the substrate W, the first nozzle 61 is located from the processing surface that exceeds the substrate W. The nozzle position (200 mm) at the position on the outer periphery of Wa is moved to the standby position. The rotation number of the substrate W in the fourth step was maintained at 500 rpm in the same manner as in the previous third step.

In the fourth step described above, the supply time (for example, 10 seconds) of supplying only IPA without supplying DIW is set to completely replace the processing liquid that enters the spaces between the fine patterns on the processing surface Wa of the substrate W with The necessary time required for the IPA is also the necessary time required for the IPA to penetrate between the patterns on the processing surface Wa of the substrate W.

The fifth step is a drying process (Dry process) for drying the substrate W. In this fifth step, following the fourth step, the substrate W is continuously rotated for 20 seconds, and the rotation of the substrate W is stopped after 20 seconds. The supply of IPA is stopped, and the to-be-processed surface Wa of the substrate W is dried by this spin drying. At this time, the first nozzle 61 and the second nozzle 71 are located in a standby position that does not face the processing surface Wa of the substrate W. That is, in the fifth step, the second nozzle 71 is moved from the nozzle position facing the center of the processing surface Wa of the substrate W to the standby position. The rotation number of the substrate W in the fifth step is maintained faster than that in the previous fourth step. 1200rpm.

According to the aforementioned substrate processing process, in the second step, when IPA is supplied to the processing surface Wa of the substrate W, the DIW supply position is shifted from the center of the processing surface Wa of the substrate W to the processing surface Wa of the substrate W. The liquid film of DIW near the center becomes thinner. Accordingly, even if IPA is supplied to the center of the processing surface Wa of the substrate W, the liquid film of the DIW can inhibit the expansion of the IPA, and it is easy to replace the DIW with the IPA, and the efficiency of replacing the DIW with the IPA can be improved.

In the third step, the DIW supply scan is performed because the DIW supply position moves from the center of the processing surface Wa of the substrate W in an outward direction, and the amount of DIW liquid flows from the processing surface Wa of the substrate W. The center gradually decreases toward the periphery. Thereby, the discharge of DIW from the vicinity of the center of the processing surface Wa of the substrate W to the periphery is promoted. Since the liquid film of the DIW is suppressed from hindering the expansion of the IPA, the time for the expansion of the IPA to the entire processing surface Wa of the substrate W becomes faster. , Improved the replacement efficiency from DIW to IPA.

Among them, as shown in FIG. 6, in a comparative example in which the scanning of the DIW supply position is not performed, the replacement time from DIW to IPA is 20 seconds (5 seconds in the second step + 15 seconds in the third step = 20 seconds). 15 seconds in the first embodiment (1 second in the second step + 4 seconds in the third step + 10 seconds in the fourth step = 15 seconds). Therefore, the replacement time of the first embodiment is shortened by 5 seconds compared to the replacement time of the comparative example. Next, since a step of scanning the DIW supply position is provided, it is possible to shorten the replacement time of the DIW to the IPA. In addition, the replacement time of DIW to IPA is measured by measuring the water concentration of the liquid when the water concentration becomes less than a predetermined value or zero (0) Get it from time to time.

As described above, according to the first embodiment, the processing liquid (for example, DIW) is supplied near the center of the processing surface Wa of the substrate W from the first nozzle 61 and the processing surface Wa of the substrate W is supplied from the second nozzle 71. In a state where the center is supplied with a volatile solvent (for example, IPA), the processing liquid supply position of the processing surface Wa of the substrate W is moved from the center of the processing surface Wa of the substrate W in an outward direction. Thereby, the liquid amount of the processing liquid gradually decreases from the center of the processing surface Wa of the substrate W toward the outer periphery, and the discharge of the processing liquid from the vicinity of the center of the processing surface Wa of the substrate W toward the periphery is promoted, because the processing liquid is suppressed. The liquid film hinders the expansion of the volatile solvent, and the time for the volatile solvent to spread to the entire processing surface Wa of the substrate W becomes faster. Accordingly, the replacement efficiency of the processing liquid on the processing surface Wa of the substrate W with a volatile solvent can be improved. In addition, since the processing liquid supply position on the processing surface Wa of the substrate W is moved toward the outer periphery of the substrate W, a state where a liquid film does indeed exist on the outer periphery of the substrate W can be prevented from being exposed on the outer periphery of the substrate W. . On the periphery, the peripheral speed is faster than the center, and because the centrifugal force is also strong, the liquid film becomes thinner than the center. That is, since the processing liquid is supplied to the outer periphery of the substrate W, the liquid film on the outer periphery of the substrate W becomes thin, and it is possible to prevent the exposed surface Wa of the substrate W from being exposed.

<Second Embodiment>

The second embodiment will be described with reference to FIG. 7. In the second embodiment, only the differences from the first embodiment (the flow of the substrate processing process) will be described, and other descriptions will be omitted. The items of each column in FIG. 7 are the same as those in FIGS. 3 and 6. kind.

As shown in FIG. 7, the substrate processing process according to the second embodiment includes seven steps (first step to seventh step) after the chemical liquid processing. In addition to the processes of the first embodiment (see FIG. 3), this substrate processing process is performed in the fourth step shown in FIG. 7, that is, before the DIW + IPA process (DIW supply position scanning) to move the DIW supply position. And after that, there is a liquid film securing process (the third step and the fifth step).

In the liquid film securing process, the number of rotations of the substrate W is lowered by the control unit 80 than in the previous process. The control unit 80 continues to supply the DIW to the processed surface Wa of the substrate W for a predetermined period of time in a state where the IPA is supplied to the processed surface Wa of the substrate W (for example, 1 second in the previous step or the second step or At 3 seconds in the fourth step), the rotation mechanism 50 is controlled to reduce the number of rotations of the support portion 40. For example, in the third step, the number of rotations of the substrate W in the second step is reduced from 500 rpm to 250 rpm, and in the fifth step, the number of rotations of the substrate W in the fourth step is reduced from 250 rpm to 100 rpm. In the sixth step, the number of rotations of the substrate W in the fifth step is increased from 100 rpm to 500 rpm, and in the seventh step, the number of rotations of the substrate W in the sixth step is increased from 500 rpm to 1200 rpm.

According to this liquid film securing process, the thickness of the liquid film on the processing surface Wa of the substrate W is maintained at a desired value by making the rotation number of the substrate W lower than that of the previous process. Therefore, the entire processing surface Wa of the substrate W is maintained. Can be surely covered with liquid film. Thereby, the exposure of the to-be-processed surface Wa of the board | substrate W can be suppressed reliably in one continuous liquid process. In addition, in the fifth step, the IPA can penetrate the gap between the fine patterns on the processing surface Wa of the substrate W, and the The treatment liquid entering the gap between the fine patterns was replaced with IPA. In addition, depending on various conditions, such as the first embodiment, no liquid film securing process is required.

As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained. In addition, since the liquid film securing process is provided, the entire processing surface Wa of the substrate W is surely covered with the liquid film, because the exposure of the processing surface Wa of the substrate W can be suppressed in a series of liquid processing, and the suppression can be suppressed. Poor drying due to uneven drying.

<Third Embodiment>

The third embodiment will be described with reference to FIGS. 8 and 9. In addition, in the third embodiment, only the differences from the first embodiment (DIW supply position scanning in response to the expansion of the IPA) will be described, and other descriptions will be omitted.

As shown in FIG. 8, in the DIW supply position scanning (DIW + IPA process) of the third embodiment, the first nozzle 61, that is, the DIW supply position, corresponds to the center of the processing surface Wa of the substrate W from the second nozzle 71. The extension of the supplied IPA (the area R1 in which the IPA is extended) moves from the center of the processing surface Wa of the substrate W in an outward direction.

The first nozzle moving mechanism 62 moves the DIW supply position from the center of the processing surface Wa of the substrate W in accordance with the expansion speed (flow rate) of the IPA supplied from the second nozzle 71 to the processing surface Wa of the substrate W, for example. Move out of direction. At this time, it is preferable to move the DIW supply position so that the DIW supply position is within the region R1 and located near the outer periphery (near the boundary) of the region R1. The expansion speed of IPA is obtained by experiments. The control unit 80 sets the moving speed of the first nozzle 61. Next, the control unit 80 controls the first nozzle moving mechanism 62 based on the set value of the moving speed of the first nozzle 61 and adjusts the moving speed of the first nozzle 61.

Therefore, according to the scanning of the DIW supply position according to the expansion of IPA, the DIW supply position is moved from the center of the processing surface Wa of the substrate W in the outward direction in response to the expansion of IPA. The entire surface to be processed Wa of the substrate W is spread smoothly. Therefore, the time taken for the IPA to spread to the entire processing surface Wa of the substrate W becomes faster, and the replacement efficiency of the processing liquid with the volatile solvent can be further improved.

In addition, when the substrate W is hydrophilic, the DIW expands because it is close to the processed surface Wa of the substrate W. Although the particles are difficult to remain, but when the substrate W is hydrophobic, the DIW is repelled and expanded by the processed surface Wa of the substrate W. Because the flow becomes non-uniform, a part of the processing surface Wa of the substrate W is exposed and uneven drying occurs, and particles easily remain on the processing surface Wa of the substrate W. However, because the DIW supply position moves from the center of the processing surface Wa of the substrate W in the outward direction in response to the expansion of the IPA, the area for supplying DIW on the processing surface Wa of the substrate W gradually becomes smaller, and the IPA is stable at The entire processing surface Wa of the substrate W is expanded. Thereby, unevenness in drying due to the exposure of a part of the processing surface Wa of the substrate W can be suppressed, and particles can be prevented from remaining on the substrate W having a hydrophobic property.

Among them, for example, as the substrate W having a hydrophilic property, there is a silicon substrate whose surface to be processed Wa is covered with an oxide film. On the other hand, as the substrate W having a hydrophobic property, there is a silicon substrate whose surface to be processed Wa is not coated, that is, a silicon substrate on which silicon is exposed. In the silicon substrate on which silicon is exposed, DIW (H ₂ O) generally remains on the processing surface Wa, and the processing surface Wa is oxidized to generate a watermark and remains. However, because the DIW supply position moves from the center of the processing surface Wa of the substrate W in the outward direction in response to the expansion of the IPA, as described above, because IPA expands smoothly over the entire processing surface Wa of the substrate W, the DIW starts The processed surface Wa of the substrate W quickly catches up. This makes it possible to suppress the occurrence of watermarks caused by the residual of DIW, and it is possible to suppress the residual of particles on the substrate W having hydrophobicity.

Among them, the case of performing the sequential processing (with nozzle scanning = scanning with DIW supply position) of the third embodiment and the case of performing sequential processing (without nozzle scanning = scanning without DIW supply position) according to the third embodiment will be described with reference to FIG. 9. , The degree to which particles (watermarks) remain on the substrate W having hydrophobicity.

In FIG. 9, the substrate W on the left side is the result of the sequential processing of the third embodiment, and the substrate W on the right side is the result of the sequential processing of the comparative example. The black dots on the processing surface Wa of the substrate W indicate that the particles also indicate their remaining positions. The measurement of the particles was performed using a general particle counter.

As shown in FIG. 9, compared with the processed surface Wa of the substrate W on the right, the processed surface Wa of the left substrate W has very few black spots. That is, when the substrate processing is performed based on the sequential processing (with nozzle scanning) of the third embodiment, the number of particles can be reduced to 1/5 to 1/4 compared to the sequential processing (without nozzle scanning) of the comparative example. To the extent that adhesion to particles of the substrate W having a hydrophobic property can be suppressed.

As described above, according to the third embodiment, the same effects as those of the first embodiment can be obtained. Also, by responding to volatile solvents such as The expansion of the IPA) causes the processing liquid supply position (for example, the DIW supply position) of the first nozzle 61 to move outward from the center of the processing surface Wa of the substrate W, which can suppress the processing liquid from hindering the expansion of the volatile solvent. Since the volatile solvent smoothly spreads over the entire processing surface Wa of the substrate W, the replacement efficiency from the processing liquid to the volatile solvent can be further improved. Furthermore, since it is possible to suppress particles remaining on the substrate W having hydrophobicity, contamination of the substrate W can be suppressed.

<Fourth Embodiment>

The fourth embodiment will be described with reference to FIG. 10. In the fourth embodiment, only the differences from the first embodiment (nozzle linear movement mechanism) will be described, and other descriptions will be omitted.

As shown in FIG. 10, the first nozzle moving mechanism 62 of the fourth embodiment includes a nozzle linear moving mechanism 62c in addition to the movable arm 62a and the arm swinging mechanism 62b of the first embodiment. In the first nozzle moving mechanism 62, the first nozzle 61 and the second nozzle 71 are individually moved by the nozzle linear moving mechanism 62c. Therefore, in the fourth embodiment, the second nozzle moving mechanism 72 of the first embodiment is not needed and removed.

The nozzle linear movement mechanism 62 c is provided on the movable arm 62 a and supports the first nozzle 61 and the second nozzle 71, and the supported first nozzle 61 and the second nozzle 71 are processed along the substrate W on the support portion 40. Surface Wa moves on a straight line. Thereby, the liquid supply position (DIW supply position and IPA supply position) on the to-be-processed surface Wa of the substrate W on the support part 40 can be moved. Therefore, the nozzle linear movement mechanism 62c serves as a processing liquid supply position along the substrate W. The position moving part that moves in the direction of the processed surface Wa functions.

Among these, as the nozzle linear movement mechanism 62c, various movement mechanisms, such as a linear motor type movement mechanism and a conveyance screw type movement mechanism, can be used, for example. This nozzle linear movement mechanism 62 c is electrically connected to the control unit 80 (see FIG. 1), and its driving is controlled by the control unit 80.

As described above, according to the fourth embodiment, the same effects as those of the first embodiment can be obtained. In addition, the first nozzle 61 and the second nozzle 71 are moved by the nozzle linear moving mechanism 62c which is common to them, because the second nozzle moving mechanism 72 of the first embodiment can be removed, compared with the first embodiment. The device configuration can be simplified.

<Fifth Embodiment>

A fifth embodiment will be described with reference to FIG. 11. In the fifth embodiment, only the differences from the first embodiment (nozzle head swing mechanism) will be described, and other descriptions will be omitted.

As shown in FIG. 11, the first nozzle moving mechanism 62 of the fifth embodiment includes a nozzle head swing mechanism 62d in addition to the movable arm 62a and the arm swing mechanism 62b of the first embodiment. The first nozzle moving mechanism 62 swings the first nozzle 61 by a nozzle head swing mechanism 62d.

The nozzle head swing mechanism 62d is provided at the front end of the extended movable arm 62a, that is, the end on the opposite side to the arm swing mechanism 62b on the movable arm 62a. This nozzle head swing mechanism 62 d supports one end of the first nozzle 61, and swings the first nozzle 61 by rotating the supported one end of the first nozzle 61 as a rotation center. Thereby, the liquid supply level on the processing surface Wa of the substrate W on the support portion 40 can be set. (DIW supply position) moves. Therefore, the nozzle head swing mechanism 62d functions as a position moving part that moves the processing liquid supply position in the direction of the processing surface Wa of the substrate W.

Among them, for example, the nozzle head swing mechanism 62d has a motor (not shown) that can change the rotation direction. The rotation shaft of this motor is connected to one end of the first nozzle 61 at a right angle. Thereby, one end of the first nozzle 61 is used as a rotation center, so that the first nozzle 61 can be rotated. The nozzle head swing mechanism 62 d is electrically connected to the control unit 80 (see FIG. 1), and its driving is controlled by the control unit 80.

As described above, according to the fifth embodiment, the same effect as that of the first embodiment can be obtained. In addition, compared with the first and fourth embodiments, the moving range of the first nozzle 61 when the processing liquid supply position is moved can be reduced.

<Sixth Embodiment>

A sixth embodiment will be described with reference to FIG. 12. In the sixth embodiment, only the differences from the first embodiment (nozzle head swing mechanism) will be described, and other descriptions will be omitted.

As shown in FIG. 12, in the sixth embodiment, the first nozzle moving mechanism 62 of the first embodiment is removed, and a nozzle head swing mechanism 62d is provided. The nozzle head swing mechanism 62d swings the first nozzle 61.

The nozzle head swing mechanism 62 d is fixedly provided on the upper end portion of the peripheral wall of the cup 30. This nozzle head swing mechanism 62d supports one end of the first nozzle 61, and uses the one end of the supported first nozzle 61 as a rotation center to rotate the first nozzle 61 and swing it. move. Thereby, the processing liquid supply position (DIW supply position) on the processing surface Wa of the substrate W on the support part 40 can be moved. Therefore, the nozzle head swing mechanism 62d functions as a position moving part that moves the processing liquid supply position in the direction of the processing surface Wa of the substrate W. The processing liquid discharged from the nozzle 61 is supplied from the oblique direction with respect to the processing surface Wa of the substrate W on the support portion 40.

Among them, for example, the nozzle head swing mechanism 62 d has a motor (not shown) that can change the direction of rotation, as in the fifth embodiment, and the rotation axis of the motor is connected to one end of the first nozzle 61 at a right angle. Thereby, one end of the first nozzle 61 is used as a rotation center, so that the first nozzle 61 can be rotated. The nozzle head swing mechanism 62 d is electrically connected to the control unit 80 (see FIG. 1), and its driving is controlled by the control unit 80.

As described above, according to the sixth embodiment, the same effects as those of the first embodiment can be obtained. In addition, the first nozzle moving mechanism 62 of the first, fourth, and fifth embodiments can be removed, and the device configuration can be simplified compared with the first, fourth, and fifth embodiments. Furthermore, since the first movable arm 62a that moves above the processing surface Wa of the substrate W on the support portion 40 is eliminated, it is possible to suppress the particles (dust, impurities such as metal powder) from falling from the first movable arm 62a from being attached. The to-be-processed surface Wa of the substrate W on the support part 40 can suppress contamination of the substrate W.

<Seventh Embodiment>

A seventh embodiment will be described with reference to FIG. 13. In addition, in the seventh embodiment, only the differences from the first embodiment (variation of the nozzle discharge amount) will be described. More control), and other descriptions are omitted.

As shown in FIG. 13, in the seventh embodiment, the first nozzle moving mechanism 62 of the first embodiment is removed, and the nozzle 61 is fixed to the upper end portion of the peripheral wall of the cup 30. In addition, the control unit 80 controls the first liquid supply unit 63 to adjust the discharge amount of the processing liquid (for example, DIW) discharged from the first nozzle 61. Thereby, the processing liquid supply position (DIW supply position) on the processing surface Wa of the substrate W on the support part 40 can be moved. For example, the control unit 80 gradually decreases the discharge amount of the processing liquid from the first nozzle 61 and the discharge amount of the processing liquid supply position to the center of the processing surface Wa of the substrate W, so that the processing liquid supply position is reduced from that of the substrate W. The center of the processing surface Wa gradually moves in an outward direction. Therefore, the control part 80 and the 1st liquid supply part 63 function as a position moving part which moves this processing liquid supply position in the direction of the to-be-processed surface Wa of the board | substrate W. The processing liquid discharged from the nozzle 61 is supplied from the oblique direction with respect to the processing surface Wa of the substrate W on the support portion 40.

As described above, according to the seventh embodiment, the same effects as those of the first embodiment can be obtained. In addition, the first nozzle moving mechanism 62 of the first, fourth, and fifth embodiments can be removed, and the device configuration can be simplified compared with the first, fourth, and fifth embodiments. Furthermore, since the nozzle head swing mechanism 62d of the sixth embodiment can be removed, the device configuration can be simplified compared to the sixth embodiment. In addition, since the first movable arm 62a that moves the processed surface Wa of the substrate W on the support portion 40 is eliminated, it is possible to suppress particles (dust, metal powder, etc.) falling from the first movable arm 62a from being attached to the support portion The to-be-processed surface Wa of the substrate W on 40 can suppress contamination of the substrate W.

<Other embodiments>

In each of the foregoing embodiments, in addition to the seventh embodiment, the amount of the processing liquid to be discharged from the first nozzle 61 to the processing surface Wa of the substrate W can be maintained constant, but is not limited thereto. For example, the processing liquid supply position is along The processing surface Wa of the substrate W is moved in the outward direction from the center of the processing surface Wa, while suppressing the exposure of the processing surface Wa of the substrate W, and from the first nozzle 61 to the processing surface Wa of the substrate W. The discharge amount of the processing liquid may be gradually or stepwise decreased, that is, the supply amount of the processing liquid to the processing surface Wa of the substrate W may be gradually or gradually reduced. This can prevent the processing liquid from hindering the expansion of the volatile solvent, because the volatile solvent smoothly spreads over the entire processing surface Wa of the substrate W, and the replacement efficiency from the processing liquid to the volatile solvent can be further improved. In addition, while suppressing the exposure of the processing surface Wa of the substrate W, the supply amount of the processing liquid to the processing surface Wa of the substrate W is gradually reduced because the processing surface Wa of the substrate W is gradually reduced. There is less processing liquid, and it is possible to surely improve the replacement efficiency from the processing liquid to the volatile solvent. In addition, when the supply amount of the processing liquid is reduced as described above, the supply amount of the processing liquid is also greater than the supply amount to the extent that the processing surface Wa of the substrate W is not exposed.

In each of the foregoing embodiments, the heating source is not used in the drying process, but the invention is not limited to this. For example, the heating portion of the processing surface Wa of the substrate W on the heating support portion 40 may be used. As this heating portion, for example, an irradiation portion that irradiates light to the processed surface Wa of the substrate W on the support portion 40 and heats it can be used. The irradiated portion instantly heats the processing surface Wa of the substrate W, thereby causing a Leidenfrost phenomenon (liquid beading of the liquid) to rapidly dry the substrate W. That is, the base The plate W is instantaneously heated, and the volatile solvent in contact with the pattern on the processed surface Wa of the substrate W is instantaneously vaporized, and the volatile solvent of other parts on the processed surface Wa of the substrate W is immediately beaded (liquid bead phenomenon). . The liquid beads thus generated are scattered from the substrate W by the centrifugal force generated by the rotation of the substrate W, and the substrate W is dried.

In each of the foregoing embodiments, although the first nozzle 61 and the second nozzle 71 are not moved in the vertical direction (elevating direction), the present invention is not limited to this, and is moved in the vertical direction by the vertical moving mechanism (elevating mechanism) Yes. For example, when the liquid is supplied to the processing surface Wa of the substrate W on the support portion 40, the first nozzle 61 or the second nozzle 71 is lowered to approach the processing surface Wa of the substrate W on the support portion 40. On the other hand, when the first nozzle 61 or the second nozzle 71 is moved to the standby position, the first nozzle 61 or the second nozzle 71 is lifted away from the processing surface Wa of the substrate W on the support portion 40. At this time, when the first nozzle 61 or the second nozzle 71 is moved from the supply position to the standby position (or from the standby position to the supply position), it is raised to a position where it does not touch the cup 30. In addition, in order to avoid contact between the first nozzle 61 and the second nozzle 71 and the cup 30, the first nozzle 61 or the second nozzle 71 is moved from the supply position to the standby position (or from the standby position to the supply position). Alternatively, the first nozzle 61 or the second nozzle 71 may be raised.

Furthermore, in the above-mentioned embodiment, when the DIW supply position scanning is performed, the DIW supply position is moved from a position near the center, that is, a position of 30 mm to a position exceeding 200 mm on the outer periphery of the substrate, and then the supply of the DIW is stopped example. However, the present invention is not limited to this. For example, the supply stop position of the DIW may be the outer peripheral edge of the substrate. If it is 300mm In the case of a wafer, the position is 150 mm from the center of the wafer.

Although several embodiments of the present invention have been described above, these embodiments are merely examples and are not intended to limit the scope of the present invention. These novel embodiments can also be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and modifications are included in the scope and gist of the invention, as well as the equivalent scope of the invention described in the scope of patent application.

Claims (9)

A substrate processing apparatus comprising: a rotation mechanism for rotating a substrate having a processing surface in a plane; a first nozzle for supplying a processing liquid to a processing surface of the substrate rotated by the rotation mechanism; for a rotation of the rotation mechanism A second nozzle that supplies a volatile solvent at the center of the processing surface of the substrate; (1) supplying the processing liquid from the first nozzle to the center of the processing surface of the substrate, and supplying the processing liquid to the processing surface of the substrate; The processing liquid supply position of the processing liquid is moved from the center of the processed surface of the substrate to a position near the center, and the processing liquid is supplied from the first nozzle to a position near the center of the processed surface of the substrate. 2 is a position moving part in a state where the volatile solvent is supplied to the center of the processing surface of the substrate, and the processing liquid supply position moves from the center of the processing surface of the substrate in an outward direction. The substrate processing apparatus according to claim 1, wherein the position near the center is set such that the processing liquid supplied from the first nozzle to a position near the center is extended to a substrate of the substrate rotated by the rotating mechanism. Position up to the center of the processing surface. The substrate processing apparatus according to claim 1, wherein the position moving section is adapted to expand the supply position of the processing solution from the second substrate in response to the expansion of the volatile solvent supplied from the second nozzle to the processed surface of the substrate. The center of the processed surface moves in an outward direction. The substrate processing apparatus according to any one of claims 1 to 3, wherein the rotation mechanism supplies the processing liquid at a position near a center of a processed surface of the substrate from the first nozzle, and from the first 2 When the nozzle supplies the volatile solvent to the center of the processed surface of the substrate for a predetermined period of time, the number of rotations of the substrate is reduced and the substrate is continuously rotated; the position moving part is lowered by the rotation mechanism The number of rotations of the substrate is such that the substrate is rotated, and the processing liquid supply position is moved from the center of the processed surface of the substrate in an outward direction. The substrate processing apparatus according to any one of claims 1 to 3, wherein the volatile solvent is IPA. A substrate processing method comprising: a process of rotating a substrate having a surface to be processed in a plane by a rotation mechanism; and (ii) a process of supplying a processing liquid from a first nozzle to a center of a processing surface of the substrate rotated by the rotation mechanism; In a state where the processing liquid is supplied from the first nozzle to the center of the processing surface of the substrate, the processing liquid supply position to which the processing liquid is supplied on the processing surface of the substrate is removed from the substrate by the position moving part. The first movement process of moving the center of the processing surface to a position near the center; (1) supplying the processing liquid from the first nozzle to a position near the center of the processing surface of the substrate from the second nozzle to the rotating mechanism; A process of supplying a volatile solvent at the center of the processed surface of the substrate being rotated; (i) supplying the processing liquid from the first nozzle to a position near the center of the processing surface of the substrate; The state where the center of the processing surface supplies the volatile solvent, so that the processing liquid supply position is Position moving section from the center of the surface of the substrate to be treated along the moving direction of the second outwardly project. The substrate processing method according to claim 6, wherein the position near the center is set such that the processing liquid supplied from the first nozzle to a position near the center is extended to a substrate of the substrate rotated by the rotating mechanism. Position up to the center of the processing surface. The substrate processing method according to claim 6, wherein in the second movement process, the supply position of the processing liquid is changed from the expansion of the volatile solvent supplied from the second nozzle to the processing surface of the substrate. The center of the processed surface of the substrate moves in an outward direction. The substrate processing method according to any one of claims 6 to 8, further comprising: supplying the processing liquid at a position near a center of a processed surface of the substrate from the first nozzle to the second nozzle pair; When the state of supplying the volatile solvent at the center of the processed surface of the substrate continues for a predetermined time, before the second moving process is performed, the process of reducing the number of rotations of the substrate by the rotating mechanism and continuously rotating the substrate; In the second moving process, the substrate is rotated in a state where the substrate is rotated by the number of rotations of the substrate lowered by the rotating mechanism, and the processing liquid supply position is moved outward from the center of the processed surface of the substrate.