TW202019583A - 接合體及半導體裝置的製造方法以及接合用銅糊 - Google Patents

接合體及半導體裝置的製造方法以及接合用銅糊 Download PDF

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TW202019583A
TW202019583A TW108136712A TW108136712A TW202019583A TW 202019583 A TW202019583 A TW 202019583A TW 108136712 A TW108136712 A TW 108136712A TW 108136712 A TW108136712 A TW 108136712A TW 202019583 A TW202019583 A TW 202019583A
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copper
bonding
copper paste
mass
particles
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TW108136712A
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TWI841606B (zh
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川名祐貴
中子偉夫
根岸征央
須鎌千絵
江尻芳則
谷中勇一
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日商日立化成股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
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    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C20/00—Chemical coating by decomposition of either solid compounds or suspensions of the coating forming compounds, without leaving reaction products of surface material in the coating
    • C23C20/02—Coating with metallic material
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Abstract

本發明的一態樣提供一種接合體的製造方法，包括：準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟；以及將接合用銅糊於受到0.1 MPa～1 MPa的壓力的狀態下予以燒結的步驟，其中，接合用銅糊含有金屬粒子及分散媒，金屬粒子的含量以接合用銅糊的總質量為基準，為50質量%以上，金屬粒子含有以所述金屬粒子的總質量為基準，為95質量%以上的次微米銅粒子。

Description

接合體及半導體裝置的製造方法以及接合用銅糊
本發明是有關於一種接合體及半導體裝置的製造方法以及接合用銅糊。
於製造半導體裝置時，為了使半導體元件與引線框架等（支撐構件）接合而使用了各種各樣的接合材。半導體裝置中，於以150℃以上的高溫進行運作的功率半導體、大規模積體電路（Large Scale Integration，LSI）等的接合中，一直使用高熔點鉛焊料作為接合材。近年來，因半導體元件的高容量化及省空間化，運作溫度上昇至高熔點鉛焊料的熔點附近，而變得難以確保連接可靠性。另一方面，伴隨著危害性物質限制指令（Restriction of Hazardous Substances，RoHS）管制強化，正在尋求一種不含鉛的接合材。
迄今為止仍在研究使用鉛焊料以外的材料的半導體元件的接合。例如，專利文獻1（日本專利第4928639號）中提出有使銀奈米粒子低溫燒結而形成燒結銀層的技術。已知此種燒結銀對於功率循環的連接可靠性高。（例如，R.卡賀紮卡（Khazaka）, L.蒙迪紮巴爾（Mendizabal）, D.亨利（Henry）：電子材料期刊（J. ElecTron. Mater）, 43(7), 2014, 2459-2466）。
進而，作為其他材料，亦提出有使銅粒子燒結而形成燒結銅層的技術。例如，專利文獻2（日本專利第5006081號）中，作為用以將半導體元件與電極接合的接合材而揭示有包含氧化銅粒子及還原劑的接合用糊。另外，專利文獻3（日本專利特開2014-167145號公報）中揭示有包含銅奈米粒子、以及銅微米粒子或銅次微米粒子、或者該些兩者的接合材。
[發明所欲解決之課題] 所述專利文獻1中記載的方法為了獲得高的連接可靠性而必須使燒結銀層緻密化，因此需要進行伴隨加壓的熱壓接製程。於所述專利文獻1中，是以5 MPa進行加壓，所以需要藉由熱加壓裝置進行加壓，而於進行此種熱壓接製程的情況下，存在生產效率下降、良率下降等課題。進而，於使用銀奈米粒子的情況下，銀所造成的材料成本的顯著增加等成為問題。
所述專利文獻2中記載的方法藉由熱壓接製程而避免了自氧化銅還原為銅時的體積收縮。藉由熱壓接製程，能夠避免自氧化銅還原為銅時的厚度方向的體積收縮，但由於氧化銅粒子本身會於向銅還原時進行體積收縮，因此難以抑制面方向的體積收縮，而包含燒結銅層的接合層內部的龜裂可能成為問題。
所述專利文獻3中記載的方法是於不加壓的狀態下進行燒結，但就以下方面而言對於供至實際應用尚不充分。即，對於銅奈米粒子，為了抑制氧化及提高分散性而需要利用表面保護劑對表面進行修飾，但由於銅奈米粒子的比表面積大，因此存在如下傾向：於以銅奈米粒子為主成分的接合材中表面保護劑的調配量增加。另外，為了確保分散性而存在分散媒的調配量增加的傾向。因此，為了保管或塗敷等的供給穩定性，所述專利文獻3中記載的接合材加大了表面保護劑或分散媒的比例。藉此，燒結時的體積收縮容易變大，而且存在燒結後的緻密度容易下降的傾向，而難以確保燒結體強度。
本發明以提供一種不需要於高壓下的接合，卻可獲得接合強度優異的接合體的接合體的製造方法及半導體裝置的製造方法為目的。本發明進而亦以提供一種適合於所述製造方法且塗佈性優異的接合用銅糊為目的。 [解決課題之手段]
本發明提供一種接合體的製造方法，包括：準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟；以及將接合用銅糊於受到0.1 MPa～1 MPa的壓力的狀態下予以燒結的步驟，其中，接合用銅糊含有金屬粒子及分散媒，金屬粒子的含量以接合用銅糊的總質量為基準，為50質量%以上，金屬粒子含有以金屬粒子的總質量為基準，為95質量%以上的次微米銅粒子。
本發明亦提供一種半導體裝置的製造方法，包括：準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟；以及將接合用銅糊於受到0.1 MPa～1 MPa的壓力的狀態下予以燒結的步驟，其中，第一構件及第二構件中的至少一者為半導體元件，接合用銅糊含有金屬粒子及分散媒，金屬粒子的含量以接合用銅糊的總質量為基準，為50質量%以上，金屬粒子含有以金屬粒子的總質量為基準，為95質量%以上的次微米銅粒子。
根據本發明的接合體的製造方法及半導體裝置的製造方法，儘管不需要藉由使用特別的熱加壓裝置等進行的高壓下的接合，仍可獲得接合強度優異的接合體及半導體裝置。作為可獲得此種效果的原因，可列舉：藉由在接合用銅糊中使用次微米銅粒子，可充分地抑制由次微米銅粒子的表面保護劑及/或接合用銅糊的分散媒引起的燒結時的體積收縮。認為：由於燒結時的體積收縮被抑制，因此能夠將接合用銅糊於高溫下燒結，結果達成燒結體強度的確保及與被接著面的接合力提昇。另外，根據此製造方法，與使用以高價的銅奈米粒子為主成分的接合材的情況相比，可更廉價且穩定地製造接合體及半導體裝置。藉此，能夠進一步提高生產穩定性。
另外，藉由本發明的製造方法製造的接合體藉由具備導熱係數優異的銅的燒結體而可成為構件的散熱性亦優異者。
進而，藉由本發明的製造方法而獲得的半導體裝置藉由具備具有充分的接合力、導熱係數及熔點高的銅的燒結體，可成為具有充分的晶粒剪切強度、連接可靠性優異、並且功率循環耐性亦優異者。
本發明亦提供一種接合用銅糊，其含有金屬粒子及分散媒，金屬粒子的含量以接合用銅糊的總質量為基準，為50質量%以上，金屬粒子含有以金屬粒子的總量為基準，為95質量%以上的次微米銅粒子。
所述接合用銅糊不易發生燒結時的體積收縮，因此即便不進行高壓下的加壓，亦可製造接合強度優異的接合體。
金屬粒子亦可含有以金屬粒子的總質量為基準，為5質量%以下的微米銅粒子。
接合用銅糊中，接合用銅糊的25℃下的黏度可為0.8 Pa･s～40000 Pa･s。藉此，能夠獲得容易藉由塗佈進行製造，且強度優異的接合體或半導體裝置。
接合用銅糊中，分散媒可為選自由醇類及醚類所組成的群組中的至少一種。藉此，可使接合用銅糊的塗佈性更優異。
接合用銅糊中，次微米銅粒子的縱橫比可為5以下。藉此，抑制於加壓步驟時次微米粒子沿不均勻的方向排列，從而可抑制於接合體中出現孔隙（void）。
根據本發明，可提供一種不需要於高壓下的接合，卻可獲得接合強度優異的接合體的接合體的製造方法及半導體裝置的製造方法。根據本發明，進而可提供一種適合於所述製造方法且塗佈性優異的接合用銅糊。 [發明的效果]
以下，適當參照圖式對用以實施本發明的形態（以下，稱為「本實施形態」）進行詳細說明。本發明並不限定於以下的實施形態。
＜接合體的製造方法＞ 圖1的（a）～圖1的（e）是表示一實施形態的接合體的製造方法的示意剖面圖。一實施形態的接合體的製造方法包括：準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟（準備步驟）；以及將接合用銅糊於受到0.1 MPa～1 MPa的壓力的狀態下予以燒結的步驟（燒結步驟）。
[準備步驟] 於一實施形態中，準備步驟亦可為製作積層體的步驟。於準備步驟中，首先，如圖1的（a）中所示，準備第一構件2、及第二構件3。
（第一構件及第二構件） 作為第一構件2及第二構件3，例如可列舉：絕緣閘雙極電晶體（Insulated Gate Bipolar Transistor，IGBT）、二極體、肖特基能障二極體（Schottky-barrier diode）、金屬-氧化物半導體場效電晶體（Metal-Oxide-Semiconductor Field-Effect Transistor，MOS-FET）、閘流體、邏輯、感測器、類比積體電路、發光二極體（Light-Emitting Diode，LED）、半導體雷射器、發信器等半導體元件；引線框架、貼附有金屬板的陶瓷基板（例如直接覆銅板（direct bonded copper，DBC））、LED封裝體等半導體元件搭載用基材；銅帶、金屬塊、端子等供電用構件；散熱板；水冷板等。
第一構件2及第二構件3亦可於後述與接合用銅糊相接的面2a、3a中包含金屬。作為金屬，例如可列舉：銅、鎳、銀、金、鈀、鉑、鉛、錫、鈷等。金屬可單獨使用一種，亦可將兩種以上組合使用。另外，與接合用銅糊相接的面2a、3a亦可為包含所述金屬的合金。作為合金中所使用的金屬，除了所述金屬以外，亦可列舉：鋅、錳、鋁、鈹、鈦、鉻、鐵、鉬等。作為於與燒結體相接的面包含金屬的構件，例如可列舉：具有各種金屬鍍層的構件、導線（wire）、具有金屬鍍層的晶片、散熱片（heat spreader）、貼附有金屬板的陶瓷基板、具有各種金屬鍍層的引線框架或包含各種金屬的引線框架、銅板、銅箔。
其次，如圖1的（b）中所示，於第一構件2與第二構件3之間配置接合用銅糊1，製作如圖1的（c）中所示般的依次積層有第一構件2、接合用銅糊1及第二構件3的積層體4。關於接合用銅糊1的詳細情況將後述。
為了製作積層體4，例如如圖1的（b）中所示，於第二構件3的必要部分設置接合用銅糊1，繼而於接合用銅糊1上配置第一構件2。製作積層體4的方法並不限於圖1的（b）中所示的方法，亦可於第一構件2的必要部分設置接合用銅糊1，並將設置有接合用銅糊1的第一構件2配置於第二構件3上。
作為將接合用銅糊1設置於第二構件3或第一構件2的必要部分的方法，只要是可堆積接合用銅糊的方法即可。作為此種方法，例如可使用：絲網印刷、轉印印刷、膠版印刷、噴射印刷法、分配器、噴射分配器、針形分配器（needle dispenser）、缺角輪塗佈機、狹縫塗佈機、模塗機、凹版塗佈機（gravure coater）、狹縫塗佈、凸版印刷、凹版印刷、凹版印刷（gravure printing）、模版印刷（stencil printing）、軟微影（soft lithograph）、棒塗、敷料器（applicator）、粒子堆積法、噴霧塗佈機、旋轉塗佈機、浸漬塗佈機、電著塗裝等。
接合用銅糊1的厚度可為1 μm以上且1000 μm以下，可為10 μm以上且500 μm以下，可為50 μm以上且200 μm以下，可為10 μm以上且3000 μm以下，可為15 μm以上且500 μm以下，可為20 μm以上且300 μm以下，可為5 μm以上且500 μm以下，可為10 μm以上且250 μm以下，亦可為15 μm以上且150 μm以下。
將第一構件2配置於接合用銅糊1上的方法、或將設置有接合用銅糊1的第一構件2配置於第二構件3上的方法例如可為：使用晶片安裝器（chip mounter）、倒裝晶片結合器（flip chip bonder）、碳製或陶瓷製的定位夾具等的方法。
（接合用銅糊） 接合用銅糊1含有金屬粒子及分散媒。
金屬粒子含有以金屬粒子的總質量為基準，為95質量%以上的次微米銅粒子。次微米銅粒子具有良好的燒結性，因此可減低於主要使用銅奈米粒子的接合材中出現的高昂的合成成本、並不良好的分散性、燒結後的體積收縮的下降等課題。
於本說明書中，次微米銅粒子是體積平均粒徑為0.12 μm以上且0.8 μm以下的銅粒子。
再者，本說明書中，所謂體積平均粒徑是指50%體積平均粒徑。於求銅粒子的體積平均粒徑的情況下，可藉由如下方法等來求出：利用光散射法粒度分佈測定裝置（例如，奈米粒子徑分佈測定裝置（SALD-7500奈米（nano），島津製作所股份有限公司製造）），對使用分散劑將成為原料的銅粒子、或自接合用銅糊中去除了揮發成分而成的乾燥銅粒子分散於分散媒中而成者進行測定。於使用光散射法粒度分佈測定裝置的情況下，作為分散媒，可使用己烷、甲苯、α-萜品醇、純水等。
關於次微米銅粒子的體積平均粒徑，就獲得次微米銅粒子的合成成本的抑制、良好的分散性、表面處理劑的使用量的抑制等效果的觀點而言，較佳為0.15 μm以上，更佳為0.2 μm以上，進而佳為0.25 μm以上，尤佳為0.3 μm以上，就提高次微米銅粒子的燒結性的觀點而言，較佳為0.6 μm以下，更佳為0.5 μm以下，進而佳為0.45 μm以下。
次微米銅粒子的平均二次粒徑可為0.12 μm以上或0.15 μm以上，亦可為0.8 μm以下。本說明書中的次微米銅粒子的平均二次粒徑是最大粒徑，例如可藉由利用掃描式電子顯微鏡（SEM）對次微米銅粒子、或者自接合用銅糊1中去除了揮發成分而成的乾燥銅粒子進行觀察的方法求出。
於次微米銅粒子的形狀不是球狀的情況下，可藉由以下的方法求出平均二次粒徑（最大粒徑）。即，利用刮勺（spatula）將銅粒子的粉末載置於SEM用的碳膠帶上，製成SEM用樣品。利用SEM裝置以10000倍來觀察此SEM用樣品。利用圖像處理軟體對外接於此SEM圖像的銅粒子的長方形進行繪圖，將長方形的長邊設為該粒子的長徑。將此長徑設為最大粒徑。
次微米銅粒子的形狀並無特別限定。作為次微米銅粒子的形狀，例如可列舉：球狀、塊狀、針狀、薄片狀、大致球狀及該些的凝聚體。就分散性及填充性的觀點而言，次微米銅粒子的形狀可為球狀、大致球狀、薄片狀。就抑制燒結接合用銅糊時發生孔隙的觀點而言，次微米銅粒子較佳為球狀或大致球狀。於本說明書中，所謂「薄片狀」，包含板狀、鱗片狀等平板狀的形狀。
就分散性、填充性的觀點及抑制燒結後的孔隙的觀點而言，次微米銅粒子的縱橫比較佳為5以下。就同樣的觀點而言，次微米銅粒子的縱橫比更佳為3以下，進而佳為1.5以下。本說明書中，所謂「縱橫比」表示粒子的長邊/厚度。粒子的長邊及厚度的測定例如可根據次微米銅粒子的SEM圖像求出。
次微米銅粒子可經特定的表面處理劑處理。作為表面處理劑，例如可列舉碳數8～16的有機酸。作為碳數8～16的有機酸，例如可列舉：辛酸、甲基庚酸、乙基己酸、丙基戊酸、壬酸、甲基辛酸、乙基庚酸、丙基己酸、癸酸、甲基壬酸、乙基辛酸、丙基庚酸、丁基己酸、十一酸、甲基癸酸、乙基壬酸、丙基辛酸、丁基庚酸、月桂酸、甲基十一酸、乙基癸酸、丙基壬酸、丁基辛酸、戊基庚酸、十三酸、甲基十二酸、乙基十一酸、丙基癸酸、丁基壬酸、戊基辛酸、肉豆蔻酸、甲基十三酸、乙基十二酸、丙基十一酸、丁基癸酸、戊基壬酸、己基辛酸、十五酸、甲基十四酸、乙基十三酸、丙基十二酸、丁基十一酸、戊基癸酸、己基壬酸、棕櫚酸、甲基十五酸、乙基十四酸、丙基十三酸、丁基十二酸、戊基十一酸、己基癸酸、庚基壬酸、甲基環己烷羧酸、乙基環己烷羧酸、丙基環己烷羧酸、丁基環己烷羧酸、戊基環己烷羧酸、己基環己烷羧酸、庚基環己烷羧酸、辛基環己烷羧酸、壬基環己烷羧酸等飽和脂肪酸；辛烯酸、壬烯酸、甲基壬烯酸、癸烯酸、十一碳烯酸、十二碳烯酸、十三碳烯酸、十四碳烯酸、肉豆蔻油酸、十五碳烯酸、十六碳烯酸、棕櫚油酸、十六碳-6-烯酸（sapienic acid）等不飽和脂肪酸；對苯二甲酸、均苯四甲酸、鄰苯氧基苯甲酸、甲基苯甲酸、乙基苯甲酸、丙基苯甲酸、丁基苯甲酸、戊基苯甲酸、己基苯甲酸、庚基苯甲酸、辛基苯甲酸、壬基苯甲酸等芳香族羧酸。有機酸可單獨使用一種，亦可將兩種以上組合使用。藉由將此種有機酸與所述次微米銅粒子加以組合，而存在可兼具次微米銅粒子的分散性與燒結時的有機酸的脫離性的傾向。
表面處理劑的處理量可為於次微米銅粒子的表面附著一分子層～三分子層的量。此量可根據附著於次微米銅粒子的表面的分子層數（n）、次微米銅粒子的比表面積（Ap ）（單位m2 /g）、表面處理劑的分子量（Ms ）（單位g/mol）、表面處理劑的最小被覆面積（SS ）（單位m2 /個）、以及亞佛加厥數（NA ）（6.02×1023 個）而算出。具體而言，表面處理劑的處理量可依據表面處理劑的處理量（質量%）=｛（n·Ap ·Ms ）/（SS ·NA +n·Ap ·Ms ）｝×100%的式子而算出。
次微米銅粒子的比表面積可藉由利用布厄特（Brunauer, Emmett and Teller，BET）比表面積測定法對經乾燥的次微米銅粒子進行測定來算出。於表面處理劑為直鏈飽和脂肪酸的情況下，表面處理劑的最小被覆面積為2.05×10-19 m2 /1分子。於為除此以外的表面處理劑的情況下，例如可藉由根據分子模型的計算、或「化學與教育」（上江田捷博、稻福純夫、森嚴，40（2），1992，p114-117）中記載的方法來測定。下述示出表面處理劑的定量方法的一例。表面處理劑可藉由自接合用銅糊中去除了分散媒的乾燥粉的熱脫附氣體·氣相層析質量分析計來鑒定，藉此可決定表面處理劑的碳數及分子量。表面處理劑的碳量比例可藉由碳量分析來進行分析。作為碳量分析法，例如可列舉高頻感應加熱爐燃燒/紅外線吸收法。可根據經鑒定的表面處理劑的碳數、分子量及碳量比例並藉由所述式來算出表面處理劑量。
表面處理劑的所述處理量可為0.07質量%以上且2.1質量%以下，亦可為0.10質量%以上且1.6質量%以下，亦可為0.2質量%以上且1.1質量%以下。
於次微米銅粒子由表面處理劑進行了處理的情況下，與使用未經表面處理的銅粒子（例如氧化銅（CuO）、氧化亞銅（Cu2 O））相比，燒結時的體積收縮得到抑制，從而能夠進一步提高接合強度。這是由於由分散媒、及氧化銅的還原引起的燒結時的體積收縮進一步被抑制。次微米銅粒子中所含的碳量為0.5質量%～1質量%左右，燒結時的體積收縮變少，因此即便出現了由表面處理劑引起的燒結時的體積收縮，亦容易確保接合體的接合強度。
作為本實施形態的次微米銅粒子，可使用市售品。作為市售的次微米粒子，例如可列舉：CH-0200（三井金屬礦業股份有限公司製造，體積平均粒徑0.36 μm）、HT-14（三井金屬礦業股份有限公司製造，體積平均粒徑0.41 μm）、CT-500（三井金屬礦業股份有限公司製造，體積平均粒徑0.72 μm）、Tn-Cu100（太陽日產股份有限公司製造，體積平均粒徑0.12 μm）。
就即便不進行高壓下的接合，亦容易獲得接合強度優異的接合體的觀點、及接合用銅糊的塗佈性更優異的觀點而言，次微米銅粒子的含量以金屬粒子的總質量為基準，為95質量%以上。就同樣的觀點而言，次微米銅粒子的含量以金屬粒子的總質量為基準，可為96質量%以上、98質量%以上、或99質量%以上，亦可為100質量%。特別是，於將接合用銅糊用於半導體元件的接合的情況下，若次微米銅粒子的含量為所述範圍內，則存在半導體裝置顯示出良好的晶粒剪切強度及連接可靠性的傾向。
就即便不進行高壓下的接合，亦容易獲得接合強度優異的接合體的觀點、及接合用銅糊的塗佈性更優異的觀點而言，次微米銅粒子的含量以接合用銅糊總量為基準，較佳為40質量%以上，更佳為50質量%以上，進而佳為70質量%以上，而且，較佳為95質量%以下，更佳為92質量%以下，進而佳為80質量%以下。
金屬粒子除了次微米銅粒子以外，亦可進而含有微米銅粒子。於本說明書中，微米銅粒子是體積平均粒徑為2 μm以上且50 μm以下的銅粒子。體積平均粒徑的測定方法與所述次微米銅粒子的測定方法相同。
就即便不進行高壓下的接合，亦容易獲得接合強度優異的接合體的觀點、及接合用銅糊的塗佈性更優異的觀點而言，微米銅粒子的含量以金屬粒子的總質量為基準，較佳為5質量%以下，更佳為3質量%以下，進而佳為1質量%以下。金屬粒子亦可不含有微米銅粒子。
金屬粒子亦可包含所述銅粒子以外的其他金屬粒子，例如亦可包含鋅、鎳、銀、金、鈀、鉑等的粒子。其他金屬粒子的體積平均粒徑可為0.01 μm以上且10 μm以下，亦可為0.01 μm以上且5 μm以下，亦可為0.05 μm以上且3 μm以下。於金屬粒子包含銅粒子以外的其他金屬粒子的情況下，就獲得充分的接合性的觀點而言，其他金屬粒子的含量以金屬粒子的總質量為基準，可為5質量%以下、3質量%以下、或1質量%以下。亦可不含其他金屬粒子。其他金屬粒子的形狀並無特別限定。
藉由包含銅粒子以外的金屬粒子，可獲得固溶或分散有多種金屬的燒結體，因此燒結體的降伏應力、疲勞強度等機械特性得到改善，從而容易提高連接可靠性。另外，藉由添加多種金屬粒子，可使接合用銅糊1的燒結體對於特定的被接著體具有充分的接合強度。於將接合用銅糊1用於半導體元件的接合的情況下，容易提高半導體裝置的晶粒剪切強度及連接可靠性。
就即便不進行高壓下的接合，亦容易獲得接合強度優異的接合體的觀點、及接合用銅糊的塗佈性更優異的觀點而言，金屬粒子的含量以接合用銅糊的總質量為基準，為50質量%以上。關於金屬粒子的含量，就同樣的觀點而言，以接合用銅糊的總質量為基準，較佳為60質量%以上，更佳為65質量%以上，進而佳為70質量%以上，就接合用銅糊的塗佈性更優異的觀點而言，較佳為95質量%以下，更佳為90質量%以下，進而佳為85質量%以下，尤佳為80質量%以下。
分散媒並無特別限定，可為揮發性的分散媒。作為揮發性的分散媒，例如可列舉：戊醇、己醇、庚醇、辛醇、癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、α-萜品醇、異冰片基環己醇（MTPH）等醇類（一元及多元醇類）；乙二醇丁醚、乙二醇苯醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇單丁醚、二乙二醇單異丁醚、二乙二醇己醚、三乙二醇甲醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲基醚、二乙二醇異丙基甲基醚、三乙二醇二甲醚、三乙二醇丁基甲基醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、三丙二醇二甲醚等醚類；乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、二丙二醇甲醚乙酸酯（dipropylene glycol methyl ether acetate，DPMA）、乳酸乙酯、乳酸丁酯、γ-丁內酯、碳酸伸丙酯等酯類；N-甲基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺等酸醯胺；環己酮、辛烷、壬烷、癸烷、十一烷等脂肪族烴；苯、甲苯、二甲苯等芳香族烴；具有碳數1～18的烷基的硫醇類；具有碳數5～7的環烷基的硫醇類。作為具有碳數1～18的烷基的硫醇類，例如可列舉：乙基硫醇、正丙基硫醇、異丙基硫醇、正丁基硫醇、異丁基硫醇、第三丁基硫醇、戊基硫醇、己基硫醇及十二烷基硫醇。作為具有碳數5～7的環烷基的硫醇類，例如可列舉：環戊基硫醇、環己基硫醇及環庚基硫醇。分散媒可將該些單獨使用一種或組合兩種以上來使用。
就進一步提高接合用銅糊1的塗佈性的觀點而言，分散媒較佳為選自由醇類及醚類所組成的群組中的至少一種，更佳為選自由二乙二醇單丁醚、α-萜品醇、MTPH及環己酮所組成的群組中的至少一種。分散媒亦可為二乙二醇單丁醚與α-萜品醇的混合物或α-萜品醇與MTPH的混合物。
分散媒的含量相對於金屬粒子100質量份可為5質量份～50質量份。若分散媒的含量為所述範圍內，則可將接合用銅糊1調整為更適當的黏度，而且可使得難以阻礙銅粒子的燒結。
就進一步提高接合用銅糊1的塗佈性的觀點而言，分散媒的含量以接合用銅糊的總質量為基準，較佳為5質量%以上，更佳為10質量%以上，進而佳為20質量%以上，而且，較佳為70質量%以下，更佳為50質量%以下，進而佳為30質量%以下。
接合用銅糊1中除了金屬粒子及分散媒以外，亦可視需要適當添加非離子系界面活性劑、氟系界面活性劑等濕潤性提昇劑；矽酮油等消泡劑；無機離子交換體等離子捕捉劑等。亦可添加所述表面處理劑作為添加劑。
關於接合用銅糊1的25℃下的黏度，就接合體100的接合強度更優異的觀點而言，較佳為0.8 Pa･s以上，更佳為10 Pa･s以上，進而佳為100 Pa･s以上，尤佳為200 Pa･s以上，就進一步提高接合用銅糊1的塗佈性的觀點而言，較佳為40000 Pa･s以下，更佳為30000 Pa･s以下，進而佳為10000 Pa･s以下，尤佳為1000 Pa･s以下。黏度是指卡森（Casson）黏度，可使用黏彈性測定裝置進行測定。接合用銅糊的黏度可藉由調整金屬粒子及分散媒的含量或適當選擇分散媒的種類來進行調整。
所述接合用銅糊1例如可將所述次微米銅粒子與視需要的其他材料混合至分散媒中來進行製備。於各成分混合後的分散液中，亦可進行攪拌處理。於接合用銅糊1中，亦可藉由分級操作來調整分散液的最大粒徑。此時，分散液的最大粒徑可設為10 μm以下，亦可設為5 μm以下。
於接合用銅糊1含有次微米銅粒子以外的金屬粒子的情況下，亦可將次微米銅粒子及分散媒預先混合，進行後述的分散處理而製備分散液，進而混合其他金屬粒子及任意的添加劑來進行製備。藉由設為此種順序，其他金屬粒子與任意的添加的混合性變佳，從而進一步提高接合用銅糊的性能。對於次微米銅粒子的分散液，亦可藉由分級操作來將凝聚物去除。
作為分散處理，例如可列舉使用了薄層剪切分散機、珠磨機、超音波均質機、高剪切混合機（high shear mixer）、狹縫三輥研磨機、濕式超微粒化裝置、超音速式噴射磨機、超高壓均質機、分散器（Disperizer）的處理。
攪拌處理可使用攪拌機來進行。作為攪拌機，例如可列舉：自轉公轉型攪拌裝置、擂潰機、雙軸混煉機、三輥研磨機、行星式攪拌機（planetary mixer）、薄層剪切分散機。另外，攪拌處理亦可使用研缽利用人力來進行攪拌處理。亦可於其後進而使用所述攪拌機進行攪拌處理。
分級操作例如可使用過濾、自然沈降、離心分離來進行。作為過濾用的過濾器，例如可列舉：金屬網、金屬過濾器、尼龍網。
就抑制燒結時的流動及孔隙的產生的觀點而言，亦可對設於第二構件3上或第一構件2上的接合用銅糊1適當地進行乾燥。乾燥時的氣體環境可為大氣中，亦可為氮氣、惰性氣體等無氧環境中，亦可為氫氣、甲酸等還原環境中。乾燥方法可為常溫放置下的乾燥，亦可為加熱乾燥，亦可為減壓乾燥。加熱乾燥或減壓乾燥中例如可使用：加熱板、溫風乾燥機、溫風加熱爐、氮氣乾燥機、紅外線乾燥機、紅外線加熱爐、遠紅外線加熱爐、微波加熱裝置、雷射加熱裝置、電磁加熱裝置、加熱器加熱裝置、蒸汽加熱爐、熱板壓合裝置等。乾燥的溫度及時間可根據所使用的分散媒的種類及量來適當地調整。作為乾燥的溫度及時間，例如可為50℃以上且180℃以下、1分鐘以上且120分鐘以下。
[燒結步驟] 繼而，如圖1的（d）中所示，將積層體4中的接合用銅糊1於受到0.1 MPa～1 MPa的壓力的狀態下予以燒結。
於燒結步驟中，在將積層體4沿積層體4的積層方向即圖1的（d）中利用箭頭表示的方向進行加壓的同時進行加熱。積層體4的積層方向亦可稱為第一構件2的自重的作用方向，亦可稱為重力的作用方向。
加壓時的壓力為0.1 MPa～1 MPa。藉此，無需以高壓進行加壓，從而可進一步提高良率。另外，可減少接合體的孔隙，亦可進一步提高晶粒剪切強度。關於壓力，就可減少接合體的孔隙，進一步提高晶粒剪切強度的觀點而言，較佳為0.2 MPa以上，更佳為0.3 MPa以上，進而佳為0.4 MPa以上，就進一步提高接合用銅糊的良率的觀點而言，較佳為0.8 MPa以下，更佳為0.7 MPa以下，進而佳為0.6 MPa以下｡
就減少對第一構件2及第二構件3的熱損傷（thermal damage）及提高良率的觀點而言，加熱處理時的到達最高溫度可為250℃以上且450℃以下，亦可為250℃以上且400℃以下，亦可為250℃以上且350℃以下。若到達最高溫度為200℃以上，則存在如下傾向：於到達最高溫度保持時間為60分鐘以下的情況下燒結充分進行。
就使分散媒全部揮發、而且提高良率的觀點而言，到達最高溫度保持時間可為1分鐘以上且120分鐘以下，亦可為1分鐘以上且80分鐘以下，亦可為1分鐘以上且60分鐘以下。
積層體4的加壓及加熱既可組合加熱處理裝置及加壓處理裝置來使用，亦可使用加熱加壓處理裝置。加熱處理裝置例如可使用：加熱板、溫風乾燥機、溫風加熱爐、氮氣乾燥機、紅外線乾燥機、紅外線加熱爐、遠紅外線加熱爐、微波加熱裝置、雷射加熱裝置、電磁加熱裝置、加熱器加熱裝置、蒸汽加熱爐、真空焊接裝置、回流爐等。加壓處理裝置可使用碳製、金屬製的加壓夾具、重物、長尾夾（double clip）等。更具體而言，例如可使用重物作為加壓處理裝置，並組合批次式真空焊接裝置（例如，新港精機股份有限公司製造）作為加熱處理裝置來使用。
作為加熱加壓處理裝置，可使用熱板壓合裝置（例如SIN200+（品庫股份有限公司熱系統（PINK GmbH Thermosysteme）公司製造））、加熱輥壓機等。
就抑制接合用銅糊1的燒結體、第一構件及第二構件的氧化的觀點而言，燒結時的氣體環境可為無氧環境。就去除接合用銅糊的銅粒子的表面氧化物的觀點而言，燒結時的氣體環境可為還原環境。作為無氧環境，例如可列舉：氮氣、惰性氣體等無氧氣體的導入或真空下。作為還原環境，例如可列舉：純氫氣中、以合成氣體為代表的氫氣及氮氣的混合氣體中、包含甲酸氣體的氮氣中、氫氣及惰性氣體的混合氣體中、包含甲酸氣體的惰性氣體中等。
藉由對接合用銅糊1進行燒結，可獲得如圖1的（e）中所示般依次具備第一構件2、接合用銅糊的燒結體5及第二構件3的接合體100。即，一實施形態的接合體100包括：第一構件2、第二構件3、及將第一構件與第二構件接合的接合用銅糊的燒結體5。
就將第一構件及第二構件充分接合的觀點而言，接合體的晶粒剪切強度可為10 MPa以上、15 MPa以上、20 MPa以上或30 MPa以上。晶粒剪切強度可使用萬能型結合試驗機（例如達格（DAGE）公司製造的4000系列）、通用結合試驗機（universal bond tester）（例如，勞斯儀器（Royce Instruments）公司製造的勞斯（Royce）650）等來測定。
就散熱性及高溫下的連接可靠性優異的觀點而言，接合用銅糊的燒結體的導熱係數可為100 W/（m·K）以上，亦可為120 W/（m·K）以上，亦可為150 W/（m·K）以上。導熱係數可根據接合用銅糊的燒結體5的熱擴散係數、比熱容量及密度來算出。
[半導體裝置的製造方法] 其次，對半導體裝置的製造方法進行說明。於所述接合體100的製造方法中，第一構件及第二構件的至少一者為半導體元件的情況下，藉由所述接合體的製造方法，可製造半導體裝置。即，一實施形態的半導體裝置的製造方法是於所述接合體的製造方法中，將第一構件及/或第二構件替換為半導體元件，所述半導體裝置的製造方法包括：準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟；以及將接合用銅糊於受到0.1 MPa～1 MPa的壓力的狀態下予以燒結的步驟，其中，第一構件及所述第二構件中的至少一者為半導體元件，接合用銅糊含有金屬粒子及分散媒，金屬粒子的含量以所述接合用銅糊的總質量為基準，為50質量%以上，金屬粒子含有以所述金屬粒子的總質量為基準，為95質量%以上的次微米銅粒子。
第一構件及/或第二構件中所使用的半導體元件例如可為：包含二極體、整流器、閘流體、MOS閘極驅動器、功率開關、功率MOSFET、IGBT、肖特基二極體、快速回復二極體（fast recovery diode）等的功率模組；發信機；放大器；LED模組等。
圖2是表示藉由本實施形態的製造方法而獲得的半導體裝置的一例的示意剖面圖。圖3所示的半導體裝置200具備：具有第一電極22及第二電極24的絕緣基板21、藉由所述接合用銅糊的燒結體5而接合於第一電極22上的半導體元件23以及將半導體元件23與第二電極24電性連接的金屬配線25。金屬配線25與半導體元件23、以及金屬配線25與第二電極24分別藉由接合用銅糊的燒結體5而接合。另外，半導體元件23經由線27而連接於第三電極26。半導體裝置200於絕緣基板21的搭載有所述電極等的面的相反側具備銅板28。半導體裝置200的所述結構體由絕緣體29密封。半導體裝置200於第一電極22上具有一個半導體元件23，但亦可具有兩個以上。於此情況下，存在多個的半導體元件23可分別藉由接合用銅糊的燒結體5而與金屬配線25接合。
[實施例] 以下，藉由實施例對本發明進一步進行具體說明。但是，本發明並不限定於以下的實施例。
＜接合用銅糊的製備＞ 利用瑪瑙研缽對作為分散媒的二乙二醇單丁醚（和光純藥工業股份有限公司製造）0.9 g、與作為次微米銅粒子的CH-0200（三井金屬礦業股份有限公司製造）9.1 g進行混煉直至乾燥粉消失為止，將所獲得的混合液轉移至塑膠瓶中。使用自轉公轉型攪拌裝置（行星式真空攪拌機（Planetary Vacuum Mixer）ARV-310，新基（Thinky）股份有限公司製造）以2000 min-1 （2000轉/分鐘）對塞緊的塑膠瓶進行2分鐘攪拌。將此混合液設為接合用銅糊1。
進而，變更為表1～表3中所示的組成，除此以外，藉由與接合用銅糊1同樣的方法製備接合用銅糊2～接合用銅糊17。
＜黏度的測定＞ 使用黏彈性測定裝置（MCR102，安東帕（Anton Paar）公司製造）測定接合用銅糊1～接合用銅糊17的25℃下的黏度。作為測定條件，設間隙為0.2 mm、應變為2%、頻率為0.5 Hz。將自測定開始起5分鐘後的接合用銅糊的黏度示於表1～表3。
＜接合體的製造＞ 使用接合用銅糊1～接合用銅糊17並依據以下的方法來製造接合體。接合體的晶粒剪切強度藉由後述方法測定。 於19 mm×25 mm的銅板（厚度：3 mm）上載置具有3 mm×3 mm正方形開口的不鏽鋼製的金屬遮罩（厚度：200 μm），藉由使用金屬刮刀的模版印刷來塗佈接合用銅糊。將其於設定為90℃的加熱板上，於大氣中，加熱30分鐘，載置3 mm×3 mm的被接著面依次濺鍍有鈦（50 nm）、鎳（100 nm）的矽晶片（厚度：400 μm），利用鑷子（tweezers）輕輕按壓。將此樣本組裝於批次式真空焊接爐（新港精機股份有限公司製造），於以0.5 MPa進行了加壓的狀態下，於氫氣100%環境下進行30分鐘的昇溫。昇溫後，以最高到達溫度300℃、最高到達溫度保持時間60分鐘的條件進行燒結處理，從而獲得將銅板與濺鍍鎳的矽晶片接合而成的接合體。燒結後，於50℃以下將接合體取出至空氣中。
＜評價方法＞ [晶粒剪切強度] 接合體的接合強度藉由晶粒剪切強度來評價。針對製作的接合體，使用裝配有測壓儀（loadcell）（SMS-200K-24200，勞斯儀器（Royce Instruments）公司製造）的通用結合試驗機（universal bond tester）（勞斯（Royce）650，勞斯儀器（Royce Instruments）公司製造），以測定速度5 mm/min、測定高度50 μm將銅塊朝水平方向按壓，測定接合體的晶粒剪切強度。將測定8個接合體所得的值的平均值設為晶粒剪切強度。評價指標設為如下。若評價為S或A，則可謂晶粒剪切強度優異。 評價指標： S：30 MPa以上 A：20 MPa以上且不足30 MPa B：10 MPa以上且不足20 MPa C：不足10 MPa
[塗佈性的評價] 使用具有10 mm×10 mm正方形開口的不鏽鋼製的金屬遮罩（厚度：200 μm），塗佈接合用銅糊，藉此對接合用銅糊的塗佈性進行評價。評價指標設為如下。若評價為S或A，則可謂塗佈性優異。 評價指標： S：可不產生飛白地進行塗佈，糊不會自開口部流出 A：稍微產生飛白，但糊不會自開口部溢出。或者雖可不產生飛白地進行塗佈，但糊稍微自開口部流出。 B：產生飛白，但糊不會自開口部溢出。或者雖可不產生飛白地進行塗佈，但糊自開口部流出。 C：明顯產生飛白，但糊不會自開口部溢出。或者雖可不產生飛白地進行塗佈，但糊明顯自開口部流出。
[表1]
Figure 108136712-A0304-0001
[表2]
Figure 108136712-A0304-0002
[表3]
Figure 108136712-A0304-0003
[剖面形態觀察] 利用樣品夾持器（樣品夾（Samplklip）I，標樂（Buehler）公司製造）將接合體固定於杯內，於周圍流入環氧注型樹脂（愛坡曼特（epomount），立發科技（Refine Tec）股份有限公司製造）直至掩埋樣品整體為止，於真空乾燥器內靜置，進行一分鐘減壓而加以脫泡。其後，於室溫（25℃）下放置10小時而使環氧注型樹脂硬化。使用裝有金剛石切斷輪（11-304，立發科技（Refine Tec）股份有限公司製造）的立發鋸·羅（Refine Saw·Lo）（RCA-005，立發科技（Refine Tec）股份有限公司製造）於經注型的接合體的欲觀察的剖面附近進行切斷。利用裝有耐水研磨紙（碳馬克紙（carbon Mac paper），立發科技（Refine Tec）股份有限公司製造）的研磨裝置（立發拋光機（Refine Polisher）HV，立發科技（Refine Tec）股份有限公司製造）對剖面進行削切而於矽晶片露出不存在龜裂的剖面，進而削切多餘的注型樹脂並加工成可設置於截面拋光（Cross-section Polish，CP）加工機中的尺寸。利用CP加工機（IM4000，日立製作所股份有限公司製造）以加速電壓6 kV、氬氣流量0.07 cm3 /min～0.1 cm3 /min、處理時間2小時的條件對經切削加工的樣品進行截面拋光而進行剖面加工。使用濺鍍裝置（離子濺鍍機（ION SPUTTER），日立高新技術（Hitachi High-technologies）股份有限公司製造）對剖面以10 nm的厚度濺鍍鉑，從而製成SEM觀察用的樣品。利用SEM裝置（ESEM XL30，飛利浦（Philips）公司製造）以施加電壓10 kV來觀察該SEM用樣品的接合體的剖面。
圖3表示實施例1的接合體的剖面的SEM圖像，圖4表示實施例2的接合體的剖面的SEM圖像，圖5表示比較例3的接合體的SEM圖像。根據圖3～圖4可知：實施例1及實施例2中的接合用銅糊的燒結體5（5A、5B）可將鍍鎳的銅板31A、31B與濺鍍鈦、鎳的矽晶片32A、32B良好地接合。另一方面，根據圖5可知，於比較例3的接合體中，於濺鍍鈦、鎳的矽晶片32C與接合用銅糊的燒結體5C之間的接合中存在不均。可認為：由於此種結構的不同，比較例3的接合體中未獲得充分的晶粒剪切強度。
1:接合用銅糊 2:第一構件 2a、3a:與接合用銅糊相接的面 3:第二構件 4:積層體 5、5A、5B、5C:燒結體 21:絕緣基板 22:第一電極 23:半導體元件 24:第二電極 25:金屬配線 26:第三電極 27:線 28:銅板 29:絕緣體 31A、31B:鍍鎳的銅板 32A、32B、32C:濺鍍鈦、鎳的矽晶片 100:接合體 200:半導體裝置
圖1的（a）～圖1的（e）是表示一實施形態的接合體的製造方法的示意剖面圖。 圖2是表示一實施形態的半導體裝置的製造方法的示意剖面圖。 圖3是實施例1的接合體的剖面的掃描式電子顯微鏡（scanning electron microscope，SEM）圖像。 圖4是實施例2的接合體的剖面的SEM圖像。 圖5是比較例3的接合體的剖面的SEM圖像。
1:接合用銅糊
2:第一構件
2a、3a:與接合用銅糊相接的面
3:第二構件
4:積層體
5:燒結體
100:接合體

Claims (7)

  1. 一種接合體的製造方法，包括： 準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟；以及 於受到0.1 MPa～1 MPa的壓力的狀態下將所述接合用銅糊予以燒結的步驟， 所述接合用銅糊含有金屬粒子及分散媒， 以所述接合用銅糊的總質量為基準，所述金屬粒子的含量為50質量%以上， 以所述金屬粒子的總質量為基準，所述金屬粒子含有95質量%以上的次微米銅粒子。
  2. 一種半導體裝置的製造方法，包括： 準備依次積層有第一構件、接合用銅糊及第二構件的積層體的步驟；以及 於受到0.1 MPa～1 MPa的壓力的狀態下將所述接合用銅糊予以燒結的步驟， 所述第一構件及所述第二構件中的至少一者為半導體元件， 所述接合用銅糊含有金屬粒子及分散媒， 以所述接合用銅糊的總質量為基準，所述金屬粒子的含量為50質量%以上， 以所述金屬粒子的總質量為基準，所述金屬粒子含有95質量%以上的次微米銅粒子。
  3. 一種接合用銅糊，含有金屬粒子及分散媒， 以接合用銅糊的總質量為基準，所述金屬粒子的含量為50質量%以上， 以所述金屬粒子的總量為基準，所述金屬粒子含有95質量%以上的次微米銅粒子。
  4. 如申請專利範圍第3項所述的接合用銅糊，其中以所述金屬粒子的總質量為基準，所述金屬粒子含有5質量%以下的微米銅粒子。
  5. 如申請專利範圍第3項或第4項所述的接合用銅糊，其中所述接合用銅糊的25℃下的黏度為0.8 Pa･s～40000 Pa･s。
  6. 如申請專利範圍第3項至第5項中任一項所述的接合用銅糊，其中所述分散媒為選自由醇類及醚類所組成的群組中的至少一種。
  7. 如申請專利範圍第3項至第6項中任一項所述的接合用銅糊，其中所述次微米銅粒子的縱橫比為5以下。
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