TW202014542A - Sputtering film forming apparatus - Google Patents

Abstract

The present invention can suppress the occurrence of an uneroded region at the outer periphery of a sputtering target during film deposition by magnetron sputtering. The present invention is a sputtering deposition device for depositing a film onto a single object for film formation in a vacuum by using a magnetron sputtering method. The present invention has: a magnet device 10 for generating a magnetron beam, which is disposed on the opposite side from a sputtering surface 7a of a single sputtering target 7 and which moves in a direction along the sputtering surface 7a of the sputtering target 7 at the time of discharge; an inner shield section 21 which is disposed around and in close proximity to the outer periphery of the sputtering target 7 and has a floating potential; and an outer shield section 22 which is disposed around the inner shield section 21, has a ground potential, and is made of an electroconductive material.

Description

Sputtering film forming device

The present invention relates to a sputtering device, and more particularly to a technique of a sputtering film forming device for forming a film by magnetron sputtering.

Conventionally, in the magnetron sputtering device, due to the structure of the magnet device that generates a magnetic field, the magnetic field generated on the sputtering target (hereinafter, suitably referred to as "target") becomes uneven, so the sputtering gas Ions will be concentrated in the part with high magnetic flux density, and there is a problem that this part will be cut off earlier than the part with low magnetic flux density.

In order to prevent such a situation where the target material is locally cut off (erosion), conventionally, sputtering is performed while moving the magnet device.

However, if this method is used for sputtering, when the plasma generated by the discharge and captured by the magnetic field caused by the magnet device is in contact with the electrically grounded conductive member, the The charge of the ions will flow to the grounded part through the conductive member, so that the plasma disappears. In order to avoid such a situation, it is necessary to move the magnet device so that the entire outer circumference of the ring of the outer circumferential magnet is located in a range more inside than the outer circumference of the sputtering surface.

As a result, the plasma does not reach the outer peripheral portion of the sputtering surface of the target, and there is a problem that a non-eroded area that has not been sputtered remains. If the sputtered particles adhere to the non-eroded area of such a target, they will be peeled off due to abnormal discharge, etc., and cause the generation of fine particles, causing problems. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-92025

[Problems to be solved by the invention]

The present invention has been completed in consideration of the above-mentioned conventional technical problems, and its object is to provide a method for producing a non-eroded area on the outer periphery of a sputtering target when forming a film by magnetron sputtering Suppression technology. [Means to solve the problem]

The present invention accomplished in order to achieve the above object is a sputtering film-forming device which forms a film-forming object by a magnetron sputtering method in a vacuum. The sputtering film-forming device is It includes: a magnet device for magnetron generation, which is arranged on the side opposite to the sputtering surface with respect to one sputtering target, and moves in the direction along the sputtering surface of the sputtering target during discharge, And the inner shielding portion are arranged close to the outer periphery of the sputtering target and are set to a floating potential, and the outer shielding portion is provided around the inner shielding portion and are set to a ground potential and by Made of conductive material. The present invention is a sputtering film forming apparatus, wherein the inner shielding portion is provided with a repeating portion overlapping so as to cover the sputtering surface of the sputtering target. The present invention is a sputtering film forming apparatus, wherein the repeating portion of the inner shielding portion is provided to cover the entire area of the outer periphery of the sputtering surface of the sputtering target. The present invention is a sputtering film forming apparatus, wherein the repeating portion of the inner shielding portion is provided to overlap a pair of opposite corner portions of the sputtering target formed in a rectangular shape. The present invention is a sputtering film forming apparatus, wherein the inner shielding portion is provided with a protruding portion that protrudes toward the sputtering surface of the sputtering target. The present invention is a sputtering film forming apparatus, wherein the protruding portion of the inner shielding portion is provided to cover the entire area of the outer periphery of the sputtering surface of the sputtering target. The present invention is a sputtering film forming apparatus, wherein the protruding portion of the inner shielding portion is provided at a pair of opposite corner portions of the rectangular sputtering target. The present invention is a sputtering film forming apparatus, wherein the sputtering target is formed so that its outer diameter is larger than the outer diameter of the film forming object. [Effect of the invention]

In the present invention, the plasma generated during the discharge and captured by the magnetic field caused by the magnet device is approached around the outer periphery of the target by the inner shielding portion set to a floating potential. Because it is shielded, it can be prevented from reaching the outer shielding portion which is provided around the inner shielding portion and is set to the ground potential and is made of a conductive material and is in contact.

As a result, according to the present invention, the plasma can be prevented from disappearing due to the charge of the ions in the plasma contacting the shielding portion outside the ground potential, so the plasma can reach the outer periphery of the sputtering surface of the target By this, the occurrence of the non-eroded area at the outer peripheral portion of the sputtering surface of the target material can be suppressed, so that the formation caused by the peeling of the sputtered particles attached to the non-eroded area of the target material can be prevented Decrease in film properties.

In the present invention, at the inner shielding portion, a repeating portion overlapping to cover the sputtering surface of the sputtering target or a protruding portion protruding in the direction of the sputtering surface of the sputtering target is provided At this time, since the repeating part can more reliably prevent the plasma from reaching the outer shielding part, it is possible to further suppress the generation of non-eroded areas at the outer periphery of the sputtering surface of the target material due to the disappearance of the plasma The non-eroded area is reduced, and the sputtered particles can be prevented from adhering to the non-eroded area of the target material. Therefore, it is possible to further prevent the decrease in film-forming characteristics due to the peeling of the sputtered particles.

In this case, when the repeating part or the protruding part of the inner shield part is provided over the entire area of the outer periphery of the target, the ability to prevent the plasma from reaching the outer shield part and the adhesion of the sputtered particles can be prevented The ability to improve the non-eroded area of the target material, so it can cover the entire area of the outer periphery of the target material and suppress the generation of the non-eroded area of the sputtering surface of the target material caused by the disappearance of the plasma, and reduce the non-eroded area The erosion area can cover the entire area of the outer periphery of the sputtering surface of the target to prevent the sputtering particles from adhering to the non-erosion area of the target.

Also, when the overlapping portion of the inner shielding portion is provided so as to overlap with a pair of corners of the opposed target formed into a rectangular shape, or the protruding portion is provided on the target formed into a rectangular shape In the case of a pair of opposite corners, for example, in the case where the trajectory of the plasma locally exceeds the target at the pair of corners of the target, the sputtering surface of the target can be The occurrence of non-eroded areas at the outer peripheral portion of the outer ring, and surely and with a small amount of material for more effective suppression.

Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. Figure 1 (a) (b) is a demonstration of the first example of the sputtering film forming apparatus of the present invention, Figure 1 (a) is a partial cross-sectional view showing the internal structure, the first Figure (b) is a plan view showing the internal structure of important parts.

The sputtering film forming apparatus 1 of this example is a magnetron sputtering method, and has a vacuum chamber 2 set to a ground potential as described later.

As shown in FIG. 1(a), the vacuum tank 2 is connected to a vacuum evacuation device 3 that performs vacuum evacuation in the vacuum tank 2, and an argon (Ar) can be introduced into the vacuum tank 2 Sputtering gas source 4 of sputtering gas such as gas.

Inside the vacuum chamber 2, a substrate (film formation object) 6 held by the substrate holder 5 is arranged, and a target 7 mounted on the back plate 8 so as to face the substrate 6 is provided.

As shown in FIGS. 1( a) and (b ), the target 7 is formed so that its outer diameter is larger than the outer diameter of the substrate 6. In addition, the outer diameter of the back plate 8 is set to be larger than the outer diameter of the target 7.

This target 7 is made of metal or metal oxide, for example, and is exposed in the vacuum chamber 2 and is arranged so that the sputtered surface 7 a to be sputtered faces the substrate 6.

The back plate 8 is installed on the wall surface of the vacuum chamber 2 via an insulator 8a. By this, the back plate 8 is electrically insulated from the vacuum chamber 2.

The back plate 8 is electrically connected to the power supply device 9, and is configured to apply a specific power (voltage) to the target 7 via the back plate 8.

The type of electric power applied to the target 7 from the power supply device 9 is not particularly limited, and may be either DC or AC (including high-frequency or pulse-shaped ones).

Around the outer periphery of the target 7 (back plate 8), an inner shield 21 and an outer shield 22 described below are provided.

As shown in FIG. 1(b) in general, the inner shielding portion 21 and the outer shielding portion 22 of this example are provided so as to surround the target 7 and the back plate 8 respectively.

Here, the inner shielding portion 21 is made of, for example, an insulating material such as alumina (Al ₂ O ₃ ) or a conductive metal material such as titanium (Ti), aluminum (Al), stainless steel, etc. It is arranged close to the outer periphery of the target 7 (back plate 8).

In addition, the inner shield 21 is insulated from other parts in the vacuum chamber 2, and its potential is set to a floating potential.

The inner shielding portion 21 in this example is formed into a rectangular frame shape (refer to FIG. 1(b)), and is configured such that its front end portion (the upper portion as shown in FIG. 1(a)) is The sputtering surface 7a of the target 7 protrudes toward the substrate 6 side, so that the distance from the inner wall 2a of the vacuum device 2 on the magnet device 10 side to be described later is larger than the distance from the sputtering surface 7a.

On the other hand, the outer shielding portion 22 is made of a conductive metal such as titanium (Ti), aluminum (Al), stainless steel, or the like, and is provided around the inner shielding portion 21.

In addition, in this example, the outer shielding portion 22 is formed into a rectangular frame shape (refer to FIG. 1(b)), and is configured such that its front end portion (the upper portion as shown in FIG. 1(a)) The distance from the sputtering surface 7a of the target 7 toward the substrate 6 side is greater, so that the distance to the inner wall 2a of the magnet device 10 side to be described later is greater than the distance to the sputtering surface 7a.

The side shielding portion 22 is set to a ground potential together with the vacuum chamber 2, for example, and functions as so-called ground shielding for guiding the sputtered particles to the substrate 6.

A magnet device 10 is provided on the back side of the back plate 8. As shown in Fig. 1 (a) (b) and Fig. 3 (a) to be described later, the magnet device 10 is provided so as to generate a magnetic field on the sputtering surface 7a of the target 7 The center magnet 11 and the outer periphery magnet 12 are provided in a continuous shape around the center magnet 11.

The center magnet 11 is arranged in a rectangular parallelepiped shape on the magnet fixing plate 13 parallel to the back plate 8, and the outer periphery magnet 12 is fixed on the magnet fixing plate 13 and vacated by a certain distance from the peripheral edge of the center magnet 11 The ground is formed in a ring shape and arranged so as to surround the center magnet 11.

The ring-shaped outer peripheral magnet 12 surrounding the central magnet 11 does not necessarily mean a ring shape without a relay point. That is, as long as the shape surrounds the center magnet 11, it may be composed of a plurality of parts, or may have a linear shape in a certain part. In addition, it may be a closed ring or a shape in which the ring is maintained in a closed state and deformed (in this example, a rectangular shape is shown). In addition, the magnet device 10 of this example is set so that the outer diameter of the outer peripheral magnet 12 (magnet fixing plate 13) is smaller than the outer diameter of the target 7.

The outer periphery magnet 12 and the center magnet 11 are arranged such that magnetic poles of mutually different polarities face each other. That is, the center magnet 11 and the outer periphery magnet 12 are arranged so that the magnetic poles of mutually different polarities are oriented with respect to the sputtering surface 7a of the target 7.

On the back side of the magnet fixing plate 13 of the magnet device 10, for example, a moving device 14 such as an XY stage is arranged, and the magnet device 10 is mounted on the moving device 14. The mobile device 14 is connected to the control unit 15 and is configured to cause the magnet device 10 to face the center magnet 11 along the sputtering surface 7a of the target 7 by the control signal from the control unit 15 The direction of extension (longitudinal direction) and the orthogonal direction move back and forth.

In this example, the control unit 15 is configured such that the magnet device 10 enters a position inside the outer peripheral portion of the sputtering surface 7a of the target 7 at the entire outer peripheral portion of the outer peripheral magnet 12 and " (part-based moving direction 10 of the side of the magnet arrangement in this embodiment is ₁₂₁ and ₁₂₂₎ a part of the circumferential portion of the outside 12 the outer periphery of the magnet exceeds the target sputtering 7 of plated surface 7a of the outer side of the outer peripheral portion of the position ", the two The position of the person moves back and forth (see Figure 1 (a)).

In addition, in relation to the inner shield 21 described above, the magnet device 10 is configured such that the entire outer periphery of the outer periphery magnet 12 is opposed to the inner shield 21 around the sputtering surface 7a surrounding the target 7 The inner peripheral portion of the outer peripheral portion of the outer peripheral magnet 12 and the portion of the outer peripheral portion of the outer peripheral magnet 12 (in this example, the portions 12 ₁ and 12 _{2 on} the moving direction side of the magnet device 10) relative to the inner shielding portion 21 The peripheral part extends beyond the position on the outer peripheral side", and the two positions move between them.

In this example having such a configuration, in the case of forming a film on the substrate 6 by sputtering, the vacuum chamber 2 is evacuated and a sputtering gas is introduced into the vacuum chamber 2 The power supply device 9 applies a specific negative voltage to the target 7 via the back plate 8.

Then, as described above, the magnet device 10 is brought into the inner position of the entire outer peripheral portion of the outer peripheral magnet 12 with respect to the inner peripheral portion of the inner shielding portion 21 surrounding the sputtering surface 7a of the target 7 And "a part of the outer peripheral portion of the outer peripheral magnet 12 extends beyond the inner peripheral portion of the inner shielding portion 21 to a position on the outer peripheral portion side", and the positions of the two move back and forth.

By the above operation, a discharge is generated between the target 7 and the substrate 6, and the plasma gas system on the target 7 is ionized and plasmatized. The ions of the sputtering gas present in the plasma are captured by the magnetic field generated by the magnet device 10.

In this example, a negative voltage is applied to the target 7, the ions of the sputtering gas collide with the sputtering surface 7a of the target 7 of negative potential, and the particles (sputtering particles) of the target material are bombarded. The sputtered particles reach the surface of the above-mentioned substrate 6 and are attached, and a film of target material is formed on the substrate 6.

On the other hand, a part of the sputtered particles ejected from the sputtered surface 7a of the target 7 is attached to the sputtered surface 7a of the target 7 again.

In the sputtering film forming apparatus 1 of the present example described above, the plasma of the sputtering gas that is captured by the magnetic field generated by the magnet device 10 during the discharge is placed close to the target by being The outer periphery of the material 7 is shielded by the inner shielding portion 21 set to a floating potential, so it can be prevented from reaching the periphery of the inner shielding portion 21 and set to a ground potential and made of a conductive material The outer shielding portion 22 is in contact with each other.

As a result, according to this example, it is possible to avoid the disappearance of the plasma caused by the charge of the ions in the plasma contacting the shielding portion 22 outside the ground potential, so the plasma reaches the sputtering surface 7a of the target 7 The outer peripheral portion of the target surface can suppress the occurrence of the non-eroded area at the outer peripheral portion of the sputtering surface 7a of the target 7, thereby preventing the sputtered particles from adhering to the non-eroded area of the target 7 The film-forming characteristics caused by the peeling are reduced.

Figure 2 (a) (b) is a demonstration of the second example of the sputtering film forming apparatus of the present invention, Figure 2 (a) is a partial cross-sectional view showing the internal structure, the second Figure (b) is a plan view showing the internal structure of important parts. In the following, the parts corresponding to the above-mentioned first example are denoted by the same symbols, and their detailed descriptions are omitted.

As shown in FIG. 2(a)(b), the sputtering film forming apparatus 1A of this example has an inner shielding portion 21A, and the inner shielding portion 21A is provided with a sputtering surface to cover the target 7 The overlapping portion 21a overlaps in the manner of 7a.

Here, the repeating portion 21a of the inner shielding portion 21A is formed in a rectangular frame shape with a slight gap with respect to the sputtering surface 7a of the target material, and is configured such that the edge portion 21b of the opening portion has a smaller thickness than the target material The outer diameter of 7 is slightly smaller than the inner diameter.

By this, the repeating portion 21a of the inner shielding portion 21A of this example is formed to cover the entire outer periphery of the sputtering surface 7a of the target 7 over the entire area.

According to this example having such a configuration, the entire area of the inner peripheral portion can be surely covered by the repeating portion 21a of the inner shielding portion 21A provided to cover the entire outer peripheral portion of the target 7 The plasma is prevented from reaching the outer shielding portion 22, so it can cover the entire area of the outer periphery of the target 7 and suppress the non-eroded area at the outer periphery of the sputtering surface 7a of the target 7 due to the disappearance of the plasma Produced, while shrinking the non-eroded area. In addition, since the entire area of the outer peripheral portion of the sputtering surface 7a of the target 7 can be covered to prevent the sputtered particles from adhering to the non-eroded area of the target 7, the formation caused by the peeling of the sputtered particles can be further prevented Decrease in film properties.

The other operational effects are the same as the above-mentioned examples, so detailed descriptions thereof are omitted.

Fig. 3 (a) (b) is a diagram for explaining the purpose of the third example of the sputtering film forming apparatus of the present invention. FIG. 4 is a plan view showing the internal structure of the important part of the third example of the same sputtering film forming apparatus. In the following, the parts corresponding to the above-mentioned first and second examples are given the same symbols and their detailed descriptions are omitted.

In such a magnetron sputtering device, as the magnet device, as in the above-mentioned magnet device 10 shown in FIG. 3 (a), a rectangular parallelepiped central magnet 11 and a frame-shaped outer peripheral magnet are used in combination In the case of 12, there are the following problems.

That is, if the magnet device 10 is used for sputtering, the ions in the plasma generated by the discharge during sputtering will be captured by the magnetic field orbit generated by the magnet device 10 and depicted The orbital ground corresponding to the magnet device 10 moves. In this case, since the magnet device 10 is formed into a rectangular shape, the generated magnetic field trajectory also becomes an approximately rectangular shape.

However, in the actual device, as shown in FIG. 3(a)(b), the ions in the plasma 30 generated by the discharge are located on the short side of the outer peripheral magnet 12 from the magnet device 10 such as When the 12s side moves toward the long side 12l side and changes direction, the plasma density of the plasma 30 becomes higher, and the reason is that the short side 12s side of the peripheral magnet 12 of the "ion from the magnet device 10 toward the long side The corners 12c, 12d (the corners 7c, 7d where the ions change direction and move from the short side 7s side of the corresponding target 7 toward the long side 7l side) and change direction The externally shaped portions 31, 32" of the pulp 30 are moved.

As a result, if the ions move along the portions 31 and 32 that extend beyond the outer shape of the plasma 30, if they come into contact with a conductive member having a ground potential such as a ground shield, the ions in the plasma 30 The electric charge flows to the grounding portion through the conductive member, causing a part of the plasma 30 to disappear, and there is a non-eroded area that remains unsputtered on the sputtering surface 7a of the target 7 (refer to FIG. 1 a) Subject.

Figure 4 is a showcase for the means to solve the above problems. As shown in FIG. 4, in the sputtering film forming apparatus 1B of the third example, the inner shielding portion 21B is formed as a pair opposed to the target 7 formed in a rectangular shape The overlapping portions 21c, 21d are provided so that the corner portions 7c, 7d overlap.

Especially in the case of this example, it is a pair of corners opposed to the target 7 corresponding to the portions 31 and 32 of the shape protruding to the outside of the plasma 30 in the inner shielding portion 21B 7c, 7d (that is, the corners 12c, 12d where the ions shown in FIG. 3(a)(b) change direction and move from the short side 12s side to the long side 12l side of the outer peripheral magnet 12 of the magnet device 10 The corner portions 7c, 7d) of the corresponding target materials 7 are provided so that the overlapping portions 21c, 21d are respectively provided.

According to this example having such a configuration, it is possible to surely suppress the occurrence of a non-eroded area on the outer peripheral portion of the sputtering surface 7a of the target 7 with a small amount of material more effectively.

Figure 5 (a) (b) is a demonstration of the fourth example of the sputtering film-forming apparatus of the present invention, Figure 5 (a) is a partial cross-sectional view showing the internal structure, the fifth Figure (b) is a plan view showing the internal structure of important parts.

Fig. 6 is a plan view showing the internal structure of the fifth example of the sputtering film forming apparatus of the present invention. In the following, the parts corresponding to the above-mentioned first example are denoted by the same symbols, and their detailed descriptions are omitted.

As shown in FIG. 5(a)(b), the sputtering film forming apparatus 1C of this example has an inner shielding portion 23, and the inner shielding portion 23 is provided with a sputtering surface 7a toward the target 7 Projecting portion 23a protruding in the direction of.

Here, the protruding portion 23a of the inner shielding portion 23 is formed in a rectangular frame shape with a slight gap with respect to the sputtering surface 7a of the target 7, and is configured such that the edge 23b of the opening has a smaller target The outer diameter of the material 7 is slightly larger than the inner diameter.

That is, the protruding portion 23a of the inner shielding portion 23 of this example is different from the second example described above, and it is provided so as not to overlap with the sputtering surface 7a of the target 7.

In this example having such a configuration, since the protrusion 23a of the inner shielding portion 23 that can be provided by covering the entire area of the outer periphery of the target 7, the entire area of the inner periphery is surely covered The plasma is prevented from reaching the outer shielding portion 22, so it can cover the entire area of the outer periphery of the target 7 and suppress the non-eroded area at the outer periphery of the sputtering surface 7a of the target 7 due to the disappearance of the plasma Produced, while shrinking the non-eroded area.

On the other hand, as shown in FIG. 6, in the sputtering film forming apparatus 1D of the fifth example, the inner shielding portion 23 is formed in a rectangular shape and is in the same shape as the above-mentioned plasma In the vicinity of the opposing pair of corners 7c, 7d of the target 7 corresponding to the portions 31, 32 of the shape protruding outside of the 30, a protrusion 23c protruding in the direction of the sputtering surface 7a of the target 7 is provided. 23d. In this case, the protruding portions 23c and 23d are provided so as not to overlap the sputtering surface 7a of the target 7.

According to the fourth example and the fifth example having such a configuration, it is possible to reliably suppress the occurrence of a non-eroded area on the outer peripheral portion of the sputtering surface 7a of the target 7 with a small amount of material.

The other operational effects are the same as the above-mentioned examples, so detailed descriptions thereof are omitted.

In addition, the present invention is not limited to the above-mentioned embodiment, and various changes can be made. For example, in the above-mentioned embodiment, although the case where one magnet device is used has been described as an example, the present invention is not limited to this, but can also be applied as described below. In the case where a plurality of magnet devices are arranged for arrangement.

Fig. 7 is a partial cross-sectional view showing an example of using a sputtering film-forming device with a plurality of magnet devices, and Fig. 8 is an example of the sputtering film-forming device with a plurality of magnet devices. The internal structure of the important part of the plan is for display. In the following, the parts corresponding to the above examples are denoted by the same symbols, and detailed descriptions thereof are omitted.

As shown in FIGS. 7 and 8, the sputtering film forming apparatus 1E of this example is the same as the sputtering film forming apparatus 1 of the first example shown in FIGS. 1(a)(b) In the vacuum tank 2 provided with the inner shielding portion 21 and the outer shielding portion 22, a magnet device 10a is provided on the back side of the back plate 8 in the vacuum tank 2.

The magnet device 10a in this example is provided with a plurality of (in this example, 5) magnet means 10A to 10E on the magnet fixing plate 13 described above.

The magnet means 10A to 10E have the same structure, and are respectively provided with an elongated plate-shaped magnet fixing portion 16a parallel to the back plate 8 to generate a magnetic field on the sputtering surface 7a of the target 7 The center magnet 11a is provided in the direction of the direction, and the outer periphery magnet 12a is provided in a continuous shape around the center magnet 11a.

The center magnet 11a is arranged in an elongated rectangular parallelepiped shape extending in the same direction as the magnet fixing portion 16a, and the outer peripheral magnet 12a is formed to extend in the same direction as the magnet fixing portion 16a on the magnet fixing portion 16a It has an elongated ring shape and is arranged so as to surround the center magnet 11a by a certain distance from the peripheral portion of the center magnet 11a.

In each of the magnet means 10A to 10E, the ring-shaped outer peripheral magnet 12a surrounding the center magnet 11a is the same as the magnet device 10 described above, and does not necessarily refer to a ring shape without a relay point. That is, as long as the shape surrounds the center magnet 11a, it may be composed of a plurality of parts, or it may be a linear shape in a certain part. In addition, it may be a closed ring or a shape in which the ring is maintained in a closed state and deformed (in this example, a rectangular shape is shown).

Each of the magnet means 10A to 10E has the outer peripheral magnet 12a and the center magnet 11a arranged so that magnetic poles of mutually different polarities are opposed to each other, whereby the center magnet 11a and the outer peripheral magnet 12a are opposed to the target 7 The sputtering surface 7a is configured such that magnetic poles of mutually different polarities are oriented.

In addition, the magnet means 10A to 10E having such a configuration are arranged close to each other in the same direction so that the side portions in the longitudinal direction of the outer peripheral magnet 12a adjacent to each other face each other.

In the magnet device 10a of this example, as in the case of the first example described above, the magnet fixing plate 13 is attached to the moving device 14 described above, and is configured to control the magnet device by the control signal from the control unit 15 10a moves back and forth along the sputtering surface 7a of the target 7 in a direction orthogonal to the extending direction (longitudinal direction) of each magnet means 10A to 10E.

Furthermore, in this example, the magnet means 10A to 10E of the magnet device 10a are positioned such that the magnet means 10A and the magnet means 10E positioned on both sides of the magnet device 10a in the moving direction are on the moving direction side of the outer peripheral magnet 12a The distance between the edges of the portions 12a ₁ and 12a ₂ becomes smaller than the length between the edges of the target 7 in the moving direction of the moving direction, and the dimensions and the magnet means 10A to 10E are set Placement (refer to Figure 8).

In addition, in this example, for each of the outer peripheral magnets 12a of each magnet means 10A to 10E of the magnet device 10a, the distance between the edges in the direction orthogonal to the moving direction of the magnet device 10a would be The size and arrangement position of each magnet means 10A to 10E are set to be smaller than the length between the edges of the target 7 that are orthogonal to the moving direction.

In addition, the magnet device 10a is configured such that "the entire outer peripheral portion of the outer peripheral magnet 12a enters a position inside the outer periphery of the sputtering surface 7a of the target 7" and "a part of the outer peripheral portion of the outer peripheral magnet 12a ( In this example, the parts 12a ₁ and 12a _{2 on} the moving direction side of the magnet device 10a exceed the position outside the outer peripheral portion of the sputtering surface 7a of the target 7", and the two positions move back and forth.

On the other hand, in relation to the inner shielding portion 21 described above, the magnet device 10a is configured so that the entire outer periphery of the outer periphery magnet 12a is shielded from the inner side around the sputtering surface 7a surrounding the target 7 The inner peripheral portion of the portion 21 enters the inner position" and "a part of the outer peripheral portion of the outer peripheral magnet 12a (portions 12a ₁ and 12a ₂ in the moving direction side in this example) relative to the inner peripheral portion of the inner shielding portion 21 And beyond the position on the outer peripheral side," the two positions move between.

In the above-described sputtering film forming apparatus 1E of this example, the plasma of the sputtering gas that is generated due to the magnetic field generated by the magnet means 10A to 10E of the magnet device 10a during the discharge will be It is shielded by being close to the inner shield 21 disposed around the outer periphery of the target 7 and set to a floating potential, so it can be prevented from reaching the periphery of the inner shield 21 and set to the ground potential and The outer shielding portion 22 made of a conductive material is in contact with each other.

As a result, according to this example, as in the case of the first to fourth examples described above, it is possible to avoid the disappearance of the plasma caused by the charge of the ions in the plasma contacting the shielding portion 22 outside the ground potential Therefore, the plasma will reach the outer peripheral portion of the sputtering surface 7a of the target 7, thereby preventing the occurrence of non-eroded areas at the outer peripheral portion of the sputtering surface 7a of the target 7, so the cause can be prevented The film-forming characteristics are reduced due to the peeling of the sputtered particles adhering to the non-eroded area of the target 7.

Furthermore, in this example, since the magnet device 10a having a plurality of magnet means 10A to 10E is used, the concentration of electric power to the magnetic field can be alleviated, and thereby, there is an effect that the input power can be increased.

In addition, in the above example, the case where the magnet device 10a having five magnet means 10A to 10E is provided as an example has been described, but the present invention is not limited to this, but can also be applied to In the case of more than 6 magnet means.

In addition, the magnet device 10a of this example can also be applied to the sputtering film forming apparatuses 1A to 1D of the second to fifth examples described above.

In particular, in the case of sputtering using the magnet device 10a of this example, when the ions in the plasma are directed along the short side of the outer periphery magnet 12a of the ions from the magnet means 10A to 10E of the magnet devices 10a of the magnet device 10a The part of the shape that protrudes toward the outside of the plasma generated at the opposite corner where the direction changes and moves on the long side" is performed, and the sputtering film forming apparatus 1B and the fifth example of the third example above are used. The combination of the sputtering film forming apparatus 1D is effective.

That is, in the magnet device 10a of this example, at the opposite corners where the ions change direction and move from the short side to the long side with respect to the magnet means 10A to 10E, although the ions It moves along the part that protrudes toward the outside of the plasma as described above. However, the ions in this plasma are as shown in, for example, FIG. 8 even for the entire magnet device 10a. At the opposite corners 12c, 12d where the ions move from the magnet means 10A, 10E at both ends of the magnet device 10a in the moving direction, the short side to the long side of the outer peripheral magnet 12a change direction and move The part of the shape protruding from the outside of the paddle is used for movement.

1: Sputtering film forming device 2: Vacuum tank 6: substrate (object to be film-formed) 7: Sputtering target 7a: Sputtered surface 7c, 7d: corner 7l: Long side 7s: short side 8: backplane 10: Magnet device 11: Center magnet 12: peripheral magnet 21: inside shield 22: Outer shade

[Figure 1] (a), (b): It is the exhibitor of the first example of the sputtering film-forming apparatus of the present invention, and FIG. 1 (a) is a partial cross-sectional view showing the internal structure , Figure 1 (b) is a plan view showing the internal structure of important parts [Figure 2] (a) and (b): showing the second example of the sputtering film forming apparatus of the present invention, and FIG. 2 (a) is a partial cross-sectional view showing the internal structure , Figure 2(b) is a plan view showing the internal structure of important parts [Figure 3] (a), (b): It is a diagram for explaining the purpose of the third example of the sputtering film-forming apparatus of the present invention [Figure 4] This is a plan view showing the internal structure of the important part of the third example of the sputtering film forming apparatus [Figure 5] (a) and (b): showing the fourth example of the sputtering film-forming apparatus of the present invention, and figure 5 (a) is a partial cross-sectional view showing the internal structure Figure 5(b) is a plan view showing the internal structure of important parts [Figure 6] This is a plan view showing the internal structure of the fifth example of the sputtering film-forming apparatus of the present invention. [Figure 7] It is a partial cross-sectional view showing an example of using a sputtering film-forming device with a plurality of magnet devices [Figure 8] It is a plan view showing the internal structure of the important part of the example of the sputtering film forming apparatus using a plurality of magnet devices

1: Sputtering film forming device

2: Vacuum tank

2a: inner wall

3: Vacuum exhaust device

4: Sputtering gas source

5: substrate holder

6: substrate (object to be film-formed)

7: Sputtering target

7a: Sputtered surface

8: backplane

8a: insulation

9: Power supply unit

10: Magnet device

11: Center magnet

12: peripheral magnet

12 ₁ , 12 ₂ : the part on the moving direction side

13: magnet fixing plate

14: Mobile device

15: Control Department

21: inside shield

22: Outer shade

Claims (8)

A sputtering film-forming device which forms a film-forming object by a magnetron sputtering method in a vacuum, The sputtering film-forming device has: The magnet device for magnetron generation is arranged on the side opposite to the sputtering surface with respect to one sputtering target, and moves in the direction along the sputtering surface of the sputtering target during discharge, and The inner shielding portion is arranged close to the periphery of the sputtering target and is set to a floating potential, and The outer shielding portion is provided around the inner shielding portion, is set to a ground potential, and is made of a conductive material. The sputtering film forming apparatus as described in item 1 of the patent application range, wherein the inner shielding portion is provided with a repeating portion overlapping so as to cover the sputtering surface of the sputtering target. The sputtering film forming apparatus described in Item 2 of the patent application range, wherein the repeating portion of the inner shielding portion is provided to cover the entire area of the outer periphery of the sputtering surface of the sputtering target. The sputtering film forming apparatus as described in Item 2 of the patent application range, wherein the repeating portion of the inner shielding portion is provided at a pair of opposite corners of the rectangular sputtering target部 overlapping. The sputtering film forming apparatus as described in item 1 of the patent application range, wherein the inner shielding portion is provided with a protruding portion that protrudes toward the sputtering surface of the sputtering target. The sputtering film forming apparatus described in Item 5 of the patent application range, wherein the protruding portion of the inner shielding portion is provided to cover the entire area of the outer peripheral portion of the sputtering surface of the sputtering target. The sputtering film forming apparatus as described in item 5 of the patent application range, wherein the protruding portion of the inner shielding portion is provided at a pair of opposite corner portions of the sputtering target formed in a rectangular shape . The sputtering film forming apparatus as described in any one of the first to seventh patent application ranges, wherein the sputtering target material has an outer diameter larger than that of the object to be film-formed Way to form.

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