TWI772656B - Sputtering film forming apparatus - Google Patents

Abstract

The present invention provides a technique capable of suppressing the occurrence of a non-eroded region at the outer peripheral portion of a sputtering target when a film is formed by magnetron sputtering. The present invention relates to a sputtering film-forming apparatus for forming a film on one film-forming object by a magnetron sputtering method in a vacuum. In the present invention, there is provided a magnet device (10) for generating a magnetron, which is arranged on the opposite side of the sputtering surface (7a) with respect to one sputtering target (7), and is arranged along the side of the sputtering surface (7a) during discharge. The sputtering target (7) moves in the direction of the sputtering surface (7a), and the inner shielding portion (21) is arranged close to the periphery of the outer peripheral portion of the sputtering target (7) and is set as The floating potential and the outer shielding portion (22) are provided around the inner shielding portion (21), are set to ground potential, and are made of a conductive material.

Description

Sputtering film forming device

The present invention relates to a sputtering apparatus, particularly a technique for a sputtering film-forming apparatus for forming a film by magnetron sputtering.

Conventionally, in a magnetron sputtering apparatus, due to the structure of a magnet apparatus that generates a magnetic field, the magnetic field generated on a sputtering target (hereinafter, appropriately referred to as a "target") becomes non-uniform. Therefore, the sputtering gas The ions of the ions are concentrated in the part with high magnetic flux density, and there is a problem that the part is cut off earlier than the part with low magnetic flux density.

In order to prevent the occurrence of locally chipped parts (erosion) of such a target, conventionally, sputtering has been performed while moving the magnet device.

However, when sputtering is performed using such a method, when the plasma generated by the discharge and captured by the magnetic field caused by the magnet device comes into contact with the electrically grounded conductive member, the plasma The charge of the ions flows to the ground through the conductive member, and the plasma disappears. In order to avoid such a situation, it is necessary to move the magnet device so that the entire outer circumference of the outer circumference magnet ring is located more inward than the outer circumference of the sputtered surface.

As a result, the plasma does not reach the outer peripheral portion of the sputtered surface of the target, and there is a problem that a non-eroded region that is not sputtered remains. If sputtered particles adhere to the non-eroded region of such a target, they are peeled off due to abnormal discharge or the like, and become a cause of generation of particles, thereby causing a problem. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2015-92025

[The problem to be solved by the invention]

The present invention has been made in consideration of the above-mentioned conventional technical problems, and an object of the present invention is to provide a method capable of preventing a non-eroded region from being generated in the outer peripheral portion of a sputtering target when a film is formed by magnetron sputtering. Suppression techniques. [means to solve the problem]

The present invention, which has been accomplished in order to achieve the above object, is a sputtering film-forming apparatus for forming a film on a film-forming object by a magnetron sputtering method in a vacuum, and the sputtering film-forming apparatus is a The magnetron generating magnet device is arranged on the opposite side of the sputtering surface with respect to one sputtering target, and moves in the direction along the sputtering surface of the sputtering target during discharge, and an inner shielding portion, which is arranged close to the periphery of the outer peripheral portion of the sputtering target and is set to a floating potential, and an outer shielding portion is provided around the inner shielding portion and is set to a ground potential and is set by Made of conductive material. The present invention relates to a sputtering film-forming apparatus, wherein the inner shielding portion is provided with an overlapping portion overlapping so as to cover the sputtering surface of the sputtering target. The present invention is a sputtering film-forming apparatus, wherein the overlapping portion of the inner shielding portion is provided so as to cover the entire area of the outer peripheral portion of the sputtering surface of the sputtering target. The present invention is a sputtering film-forming apparatus, wherein the overlapping portion of the inner shielding portion is provided so as to overlap with a pair of opposite corners of the sputtering target formed in a rectangular shape. The present invention is a sputtering film-forming apparatus, wherein the inner shielding portion is provided with a protruding portion that protrudes in the direction of the sputtering surface of the sputtering target. The present invention is a sputtering film-forming apparatus, wherein the protruding portion of the inner shielding portion is provided so as to cover the entire area of the outer peripheral portion of the sputtering surface of the sputtering target. The present invention is a sputtering film-forming apparatus, wherein the protruding portion of the inner shielding portion is provided at a pair of opposite corners of the sputtering target formed in a rectangular shape. The present invention is a sputtering film-forming apparatus, wherein the sputtering target is formed so that its outer diameter is larger than the outer diameter of the film-forming object. [Inventive effect]

In the present invention, the plasma captured by the magnetic field generated at the time of discharge and by the magnet device is disposed close to the inner shielding portion of the outer peripheral portion of the target and set as a floating potential. Since it is shielded, it can be prevented from reaching the outer shielding portion which is provided around the inner shielding portion, is set to the ground potential, and is made of a conductive material and comes into contact with the outer shielding portion.

As a result, according to the present invention, since the disappearance of the plasma due to the contact of the electric charge of the ions in the plasma to the shielding portion outside the ground potential can be avoided, the plasma reaches the outer peripheral portion of the sputtering surface of the target. In this way, the generation of the non-erosion region at the outer peripheral portion of the sputtering surface of the target can be suppressed, so that the formation of the sputtering particles caused by the peeling of the sputtering particles adhering to the non-erosion region of the target can be prevented. Decreased film properties.

In the present invention, when the inner shielding portion is provided with a repeating portion overlapping so as to cover the sputtering surface of the sputtering target, or a protruding portion protruding in the direction of the sputtering surface of the sputtering target In this case, since the overlapping portion can more reliably prevent the plasma from reaching the outer shielding portion, it is possible to further suppress the generation of a non-eroded region at the outer peripheral portion of the sputtering surface of the target due to the disappearance of the plasma. The non-erosion area is reduced, and since the sputtered particles can be prevented from adhering to the non-eroded area of the target, it is possible to further prevent the deterioration of the film-forming properties due to the peeling of the sputtered particles.

In this case, when a repeating portion or a protruding portion of the inner shielding portion is provided over the entire outer peripheral portion of the target, the ability to prevent the plasma from reaching the outer shielding portion and the adhesion of sputtering particles can be prevented. The ability to improve the non-erosion area of the target material can cover the entire area of the outer periphery of the target material to suppress the generation of the non-erosion area of the sputtered surface of the target material due to the disappearance of the plasma, and to reduce the non-erosion area of the target material. The eroded area can cover the entire area of the outer periphery of the sputtering surface of the target to prevent sputtering particles from adhering to the non-eroded area of the target.

In addition, when the overlapping portion of the inner shielding portion is provided so as to overlap with a pair of opposite corners of the target formed in a rectangular shape, or the protruding portion is provided between the target formed in a rectangular shape In the case of the opposite pair of corners, for example, in the case where the orbit of the plasma partially protrudes from the target at the pair of corners of the target, etc., the sputtering surface of the target can be The generation of non-eroded areas at the outer periphery of the radiator can be suppressed more effectively with a small amount of material.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1(a)(b) is the one showing the first example of the sputtering film forming apparatus of the present invention, Fig. 1(a) is a partial cross-sectional view showing the internal structure, the first Figure (b) is a plan view showing the internal structure of important parts.

The sputtering film-forming apparatus 1 of this example is of the magnetron sputtering method, and has a vacuum chamber 2 set to a ground potential as described later.

As shown in FIG. 1( a ), the vacuum chamber 2 is connected to a vacuum evacuation device 3 for evacuating the inside of the vacuum chamber 2 , and an argon (Ar) can be introduced into the vacuum chamber 2 is connected to the vacuum chamber 2 . The sputtering gas source 4 of sputtering gas such as gas.

In the vacuum chamber 2, a substrate (film formation object) 6 held by the substrate holder 5 is arranged, and a target 7 mounted on the backing plate 8 so as to face the substrate 6 is arranged.

As shown in FIGS. 1( a ) and ( b ), the target material 7 is formed so that its outer diameter is larger than the outer diameter of the substrate 6 . In addition, the outer diameter of the backing plate 8 is set to be larger than the outer diameter of the target material 7 .

This target 7 is made of, for example, a metal or a metal oxide, is exposed in the vacuum chamber 2 , and is arranged so that the sputtered surface 7 a to be sputtered faces the substrate 6 .

The backing plate 8 is attached to the wall surface of the vacuum chamber 2 via the insulator 8a, whereby the backing plate 8 is electrically insulated from the vacuum chamber 2. As shown in FIG.

The backing plate 8 is electrically connected to the power supply device 9 , and is configured to apply a specific electric power (voltage) to the target 7 via the backing plate 8 .

The type of electric power applied to the target material 7 from the power supply device 9 is not particularly limited, and any of direct current and alternating current (including high frequency and pulsed ones) may be used.

In the periphery of the outer peripheral part of the target material 7 (back plate 8), the inner shielding part 21 and the outer shielding part 22 which are demonstrated below are provided.

As generally shown in FIG. 1( b ), the inner shielding portion 21 and the outer shielding portion 22 of this example are provided so as to surround the target 7 and the backing plate 8 , respectively.

Here, the inner shielding portion 21 is made of, for example, an insulating material such as alumina (Al ₂ O ₃ ) or a conductive metal material such as titanium (Ti), aluminum (Al), and stainless steel. And it is arrange|positioned close to the outer peripheral part of the target 7 (back plate 8).

In addition, the inner shielding portion 21 is insulated from other parts in the vacuum chamber 2, and its potential is set to a floating potential.

The inner shielding portion 21 in this example is formed in a rectangular frame shape (see Fig. 1(b)), and is configured such that the front end portion (upper portion as shown in Fig. 1(a)) is The sputtering surface 7a of the target 7 protrudes further toward the substrate 6, and the distance to the inner wall 2a of the vacuum chamber 2 on the side of the magnet device 10 described later is made larger than the distance to the sputtering surface 7a.

On the other hand, the outer shielding portion 22 is formed of a material such as a conductive metal such as titanium (Ti), aluminum (Al), and stainless steel, and is provided around the inner shielding portion 21 .

In addition, in this example, the outer shielding portion 22 is formed in a rectangular frame shape (refer to FIG. 1(b)), and is configured such that its front end portion (upper portion as shown in FIG. 1(a)) , which protrudes further toward the substrate 6 side than the sputtering surface 7a of the target 7, and the distance from the inner wall 2a of the vacuum chamber 2 on the side of the magnet device 10 described later is larger than the distance from the sputtering surface 7a.

The outer shielding portion 22 is, for example, set to the ground potential together with the vacuum chamber 2 , and functions as a so-called ground shield for guiding the sputtered particles to the substrate 6 .

A magnet device 10 is arranged on the inner side of the back plate 8 . As shown in FIGS. 1( a ) ( b ) and 3 ( a ) described later, the magnet device 10 has a magnet device 10 installed in an orientation that generates a magnetic field on the sputtering surface 7 a of the target 7 . The center magnet 11 and the outer peripheral magnet 12 are provided in a continuous shape around the center magnet 11 .

The center magnet 11 is fastened to the magnet fixing plate 13 parallel to the back plate 8 and is arranged in a rectangular parallelepiped shape, for example, and the outer peripheral magnets 12 are fastened to the magnet fixing plate 13 with a certain distance from the peripheral edge of the center magnet 11 . The ground is formed in a ring shape, and is arranged so as to surround the center magnet 11 .

The ring-shaped outer peripheral magnet 12 surrounding the center magnet 11 does not necessarily mean a ring shape without a relay point. That is, as long as it is a shape which surrounds the periphery of the center magnet 11, it may be composed of a plurality of parts, and may have a linear shape in a certain part. In addition, it may be a closed ring or a shape deformed while maintaining the closed state of the ring (in this example, a rectangular shape is shown). In addition, in the magnet device 10 of this example, the size is set so that the outer diameter of the outer peripheral magnet 12 (magnet fixing plate 13 ) is smaller than the outer diameter of the target 7 .

The outer peripheral magnets 12 and the center magnet 11 are arranged such that magnetic poles of mutually different polarities face each other. That is, the center magnet 11 and the outer peripheral magnet 12 are arranged so that the magnetic poles of different polarities are oriented with respect to the sputtering surface 7a of the target 7 .

On the back side of the magnet fixing plate 13 of the magnet device 10, for example, a moving device 14 such as an XY stage is arranged, and the magnet device 10 is mounted on the moving device 14. The moving device 14 is connected to the control unit 15 , and is configured so that the magnet device 10 is moved relative to the center magnet 11 along the sputtering surface 7 a of the target 7 by a control signal from the control unit 15 . It moves back and forth in the direction orthogonal to the direction of extension (longitudinal direction).

In this example, the control unit 15 is configured to cause the magnet device 10 to enter the entire outer peripheral portion of the outer peripheral magnet 12 to a position further inside than the outer peripheral portion of the sputtering surface 7a of the target 7 and A part of the outer peripheral portion of the outer peripheral magnet 12 (in this example, the parts 12 ₁ and 12 ₂ on the moving direction side of the magnet device 10 ) protrudes beyond the outer peripheral portion of the sputtering surface 7 a of the target 7 . move back and forth between the positions of the users (refer to Figure 1 (a)).

In addition, in relation to the above-mentioned inner shielding portion 21, the magnet device 10 is configured such that the entire outer peripheral portion of the outer peripheral magnet 12 corresponds to the inner shielding portion 21 surrounding the sputtering surface 7a of the target 7. The position where the inner peripheral portion of the outer peripheral magnet 12 enters into the inner side” and “a part of the outer peripheral portion of the outer peripheral magnet 12 (in this example, the parts 12 ₁ and 12 ₂ on the moving direction side of the magnet device 10 ) are relatively inside the inner shielding portion 21 the position beyond the periphery to the outer periphery side", and move between these two positions.

In this example having such a configuration, when a film is formed on the substrate 6 by sputtering, the vacuum chamber 2 is evacuated, and the sputtering gas is introduced into the vacuum chamber 2 to remove the film from the vacuum chamber 2. The power supply device 9 applies a specific negative voltage to the target 7 via the back plate 8 .

In addition, as described above, the magnet device 10 is placed in a position where the entire outer peripheral portion of the outer peripheral magnet 12 is inward with respect to the inner peripheral portion of the inner shielding portion 21 surrounding the periphery of the sputtering surface 7a of the target 7 " and "the position where a part of the outer peripheral portion of the outer peripheral magnet 12 protrudes to the outer peripheral portion side with respect to the inner peripheral portion of the inner shielding portion 21", the two positions move back and forth.

By the above operation, discharge is generated between the target material 7 and the substrate 6 , and the plasma gas system on the target material 7 is ionized and plasmaized. Ions of the sputtering gas present in the plasma are captured by the magnetic field generated by the magnet device 10 .

In this example, a negative voltage is applied to the target 7, and the ions of the sputtering gas collide with the sputtering surface 7a of the target 7 having a negative potential, and the particles of the target material (sputtering particles) are thrown off. The sputtered particles reach and adhere to the surface of the above-mentioned substrate 6 to form a film of the target material on the substrate 6 .

On the other hand, a part of the sputtering particles bounced from the sputtering surface 7a of the target material 7 adheres to the sputtering surface 7a of the target material 7 again.

In the sputtering film-forming apparatus 1 of the present example described above, the plasma of the sputtering gas captured by the magnetic field generated during discharge and by the magnet device 10 is disposed close to the target by being placed close to the target. Since the material 7 is shielded by the inner shielding portion 21 set to the floating potential around the outer peripheral portion, it can be prevented from reaching the inner shielding portion 21 provided around the inner shielding portion 21 and set to the ground potential and composed of a conductive material. The case where the outer shielding portion 22 is in contact.

As a result, according to this example, since the disappearance of the plasma caused by the electric charge of the ions in the plasma coming into contact with the ground potential outer shielding portion 22 can be avoided, the plasma reaches the sputtering surface 7 a of the target 7 . The outer peripheral portion of the target material 7 can be suppressed from being generated in the outer peripheral portion of the sputtering surface 7a of the target material 7, thereby preventing sputtering particles from adhering to the non-eroding region of the target material 7. Degradation of film-forming properties caused by peeling.

Fig. 2(a)(b) is for showing the second example of the sputtering film forming apparatus of the present invention, Fig. 2(a) is a partial cross-sectional view showing the internal structure, and Fig. 2 Figure (b) is a plan view showing the internal structure of important parts. Hereinafter, the parts corresponding to those of the first example described above are assigned the same reference numerals, and detailed descriptions thereof will be omitted.

As shown in FIGS. 2( a ) and ( b ), the sputtering film forming apparatus 1A of this example has an inner shielding portion 21A, and the inner shielding portion 21A is provided with a sputtering surface covering the target 7 The overlapping portion 21a overlapped in the manner of 7a.

Here, the overlapping portion 21a of the inner shielding portion 21A is formed in a rectangular frame shape with a slight gap with respect to the sputtering surface 7a of the target, and the edge portion 21b of the opening portion is formed to have a larger size than the target. The outer diameter of 7 is slightly smaller than the inner diameter.

In this way, the overlapping portion 21a of the inner shield portion 21A in this example is formed so as to cover the entire area of the outer peripheral portion of the sputtering surface 7a of the target 7 .

According to the present example having such a configuration, since the overlapping portion 21a of the inner shielding portion 21A provided to cover the entire outer peripheral portion of the target 7 can be assured to cover the entire inner peripheral portion of the target 7 Since the plasma is prevented from reaching the outer shielding portion 22, it is possible to suppress the non-erosion region of the outer peripheral portion of the sputtering surface 7a of the target material 7 caused by the disappearance of the plasma to cover the entire outer peripheral portion of the target material 7. generated, while shrinking the non-eroded area. In addition, since the sputtering particles can be prevented from adhering to the non-eroded region of the target 7 covering the entire area of the outer peripheral portion of the sputtering surface 7a of the target 7, the formation caused by peeling of the sputtering particles can be further prevented. Decreased film properties.

Since other functions and effects are the same as those in the above-mentioned example, the detailed description thereof will be omitted.

Fig. 3(a)(b) is a diagram for explaining the purpose of the third example of the sputtering film-forming apparatus of the present invention. In addition, FIG. 4 is a plan view showing the internal structure of an important part of the third example of the same sputtering film-forming apparatus. Hereinafter, the parts corresponding to the above-mentioned first and second examples are assigned the same reference numerals, and detailed descriptions thereof will be omitted.

In such a magnetron sputtering apparatus, as the magnet apparatus, as in the above-mentioned magnet apparatus 10 shown in FIG. In the case of 12, there are the following problems.

That is, when sputtering is performed by using the magnet device 10, ions in the plasma generated by the discharge during sputtering are captured by the magnetic field orbit generated by the magnet device 10, and the image is drawn. It moves orbitally corresponding to the magnet device 10 . In this case, since the magnet device 10 is formed in a rectangular shape, the track of the generated magnetic field also has an approximately rectangular shape.

However, in an actual device, as shown in FIGS. 3 (a) and (b), the ions in the plasma 30 generated by the discharge are separated from the short side of the magnet device 10, for example, the outer magnet 12. When the 12s side changes direction to the long side 12l side and moves, due to the reason that the plasma density of the plasma 30 increases, etc., the ions will move along the "ion from the short side 12s side of the magnet device 10 to the long side of the magnet 12 at the outer periphery of the magnet device 10". The excess generated at the corners 12c and 12d (the corners 7c and 7d where the ions change direction and move from the short side 7s side of the corresponding target 7 to the long side 71 side) and move to the Parts 31, 32" of the shape of the outer side of the pulp 30 are moved.

As a result, if the ions move along the portions 31 and 32 of such a shape extending to the outside of the plasma 30, if they come into contact with a conductive member such as a ground potential such as a ground shield, the ions in the plasma 30 will not move. The electric charge flows to the ground portion through the conductive member, so that a part of the plasma 30 disappears, and there is a non-eroded region that is not sputtered on the sputtered surface 7a (see FIG. 1 a ) of the target 7 . the subject.

FIG. 4 shows the means for solving the above-mentioned problems. As shown in FIG. 4 , in the sputtering film deposition apparatus 1B of the third example, the inner shielding portion 21B is configured such that a pair of opposing targets 7 formed in a rectangular shape is formed. The overlapping portions 21c and 21d are provided so that the corner portions 7c and 7d overlap.

In particular, in the case of this example, in the inner shielding portion 21B, a pair of corners facing the target 7 corresponding to the above-described portions 31 and 32 of the shape protruding to the outside of the plasma 30 are attached. 7c, 7d (that is, the corners 12c, 12d where the ions shown in Figs. 3(a) and (b) change direction and move from the short side 12s side of the outer magnet 12 of the magnet device 10 to the long side 12l side The overlapping portions 21c and 21d are respectively provided so that the corners 7c and 7d) of the corresponding targets 7 overlap.

According to this example having such a configuration, the occurrence of a non-eroded region in the outer peripheral portion of the sputtering surface 7a of the target material 7 can be reliably and more effectively suppressed with a small amount of material.

Fig. 5(a)(b) shows the fourth example of the sputtering film forming apparatus of the present invention, Fig. 5(a) is a partial cross-sectional view showing the internal structure, and Fig. 5 Figure (b) is a plan view showing the internal structure of important parts.

In addition, FIG. 6 is a plan view showing the internal structure of the fifth example of the sputter deposition apparatus of the present invention. Hereinafter, the parts corresponding to those of the first example described above are assigned the same reference numerals, and detailed descriptions thereof will be omitted.

As shown in FIGS. 5( a ) and ( b ), the sputtering film forming apparatus 1C of this example has an inner shielding portion 23 , and the inner shielding portion 23 is provided with a sputtering surface 7 a toward the target 7 The protrusion 23a protruding in the direction.

Here, the protruding portion 23a of the inner shielding portion 23 is formed in a rectangular frame shape with a slight gap with respect to the sputtering surface 7a of the target material 7, and the edge portion 23b of the opening portion is formed so that the edge portion 23b of the opening portion has a larger width than the target. The outer diameter of the material 7 is slightly larger than the inner diameter.

That is, the protruding portion 23a of the inner shielding portion 23 of this example is provided so as not to overlap with the sputtering surface 7a of the target 7, unlike the second example described above.

In this example having such a configuration, since the projection 23a of the inner shielding portion 23 provided to cover the entire outer peripheral portion of the target 7 can be reliably covered over the entire inner peripheral portion thereof. Since the plasma is prevented from reaching the outer shielding portion 22, it is possible to suppress the non-erosion region of the outer peripheral portion of the sputtering surface 7a of the target material 7 caused by the disappearance of the plasma to cover the entire outer peripheral portion of the target material 7. generated, while shrinking the non-eroded area.

On the other hand, as shown in FIG. 6 , in the sputtering film deposition apparatus 1D of the fifth example, the inner shielding portion 23 is formed in a rectangular shape and is configured to face the plasma in the same manner as described above. Protrusions 23c and 7d protruding toward the sputtering surface 7a of the target 7 are provided in the vicinity of the pair of opposite corners 7c and 7d of the target 7 corresponding to the portions 31 and 32 of the shape protruding from the outside of the target 7 . 23d. In this case, the protrusions 23c and 23d are provided so as not to overlap with the sputtering surface 7a of the target material 7 .

According to the fourth and fifth examples having such a configuration, the occurrence of a non-eroded region in the outer peripheral portion of the sputtering surface 7a of the target material 7 can be reliably and more effectively suppressed with a small amount of material.

Since other functions and effects are the same as those in the above-mentioned example, the detailed description thereof will be omitted.

In addition, this invention is not limited to the said embodiment, Various changes are possible. For example, in the above-mentioned embodiment, the case where one magnet device is used has been described as an example. However, the present invention is not limited to this, and can be applied to other applications as described below. In the case where a plurality of magnet devices are arranged in an arrangement.

FIG. 7 is a partial cross-sectional view showing an example of a sputtering film-forming apparatus using a plurality of magnet devices, and FIG. 8 is an example of a sputtering film-forming apparatus using a plurality of magnet devices. The internal composition of the important part of the plan is shown as a floor plan. Hereinafter, the parts corresponding to the above-mentioned examples are assigned the same reference numerals, and detailed descriptions thereof will be omitted.

As shown in Figs. 7 and 8, the sputtering film forming apparatus 1E of this example has the same sputtering film forming apparatus 1 of the first example shown in Figs. 1(a) and 8(b). In the vacuum chamber 2 provided with the inner shielding portion 21 and the outer shielding portion 22 , a magnet device 10 a is provided on the inner side of the back plate 8 in the vacuum chamber 2 .

In the magnet device 10a in this example, a plurality of (five in this example) magnet means 10A to 10E are provided on the above-mentioned magnet fixing plate 13 .

These magnet means 10A to 10E have the same configuration, and are provided with a magnet fixing portion 16a in the shape of an elongated plate parallel to the back plate 8 for generating a magnetic field on the sputtering surface 7a of the target 7, respectively. The center magnet 11a installed in the direction of the center magnet 11a, and the outer peripheral magnet 12a installed in a continuous shape around the center magnet 11a.

The center magnet 11a is arranged in an elongated, for example, rectangular parallelepiped shape extending in the same direction as the magnet fixing portion 16a, and the outer peripheral magnet 12a is formed on the magnet fixing portion 16a extending in the same direction as the magnet fixing portion 16a. It is an elongated ring shape, and is arrange|positioned so that it may surround the center magnet 11a with a predetermined distance with respect to the peripheral part of the center magnet 11a.

In each of the magnet devices 10A to 10E, the annular outer peripheral magnet 12a surrounding the center magnet 11a is not necessarily a ring shape without a relay point, as in the above-described magnet device 10 . That is, as long as it is a shape which surrounds the periphery of the center magnet 11a, it may be composed of a plurality of parts, and may have a linear shape in a certain part. In addition, it may be a closed ring or a shape deformed while maintaining the closed state of the ring (in this example, a rectangular shape is shown).

In each of the magnet means 10A to 10E, the outer peripheral magnets 12 a and the central magnets 11 a are arranged so that the magnetic poles of different polarities face each other, so that the central magnets 11 a and the outer peripheral magnets 12 a are opposed to the target 7 The sputtered surface 7a is configured so that the magnetic poles of different polarities are oriented.

And the magnet means 10A-10E which have such a structure are arrange|positioned close to the same direction so that the side part of the longitudinal direction of the adjacent outer periphery magnet 12a may oppose.

In the magnet device 10a of the present example, as in the case of the first example described above, the magnet fixing plate 13 is attached to the moving device 14 described above, and is configured so that the magnet device is driven by a control signal from the control unit 15. The 10a moves back and forth in a direction orthogonal to the direction in which each of the magnet means 10A to 10E extends (longitudinal direction) along the sputtering surface 7a of the target material 7 .

In addition, in this example, among the magnet means 10A to 10E of the magnet device 10a, the magnet means 10A and the magnet means 10E located on both sides of the moving direction of the magnet device 10a are placed on the moving direction side of the outer peripheral magnet 12a The size and size of each magnet means 10A to 10E are set so that the distance between the edges of the parts 12a ₁ and 12a ₂ is smaller than the length between the edges in the moving direction of the target 7 in the moving direction. Arrangement position (refer to Figure 8).

In addition, in this example, with respect to each of the outer peripheral magnets 12a of the magnet means 10A to 10E of the magnet device 10a, the distance between the edges in the directions orthogonal to the moving direction of the magnet device 10a is The size and arrangement position of each of the magnet means 10A to 10E are set so as to be smaller than the length between the edge portions of the target material 7 that are perpendicular to the moving direction.

In addition, the magnet device 10a is configured such that "the entire outer peripheral portion of the outer peripheral magnet 12a enters a position further inward than the outer peripheral portion of the sputtering surface 7a of the target 7" and "a part of the outer peripheral portion of the outer peripheral magnet 12a ( In this example, the parts 12a ₁ and 12a ₂ on the moving direction side of the magnet device 10a are positions beyond the outer peripheral portion of the sputtering surface 7a of the target 7", and the two positions move back and forth.

On the other hand, in relation to the above-described inner shielding portion 21, the magnet device 10a is configured to shield the entire outer circumference of the outer circumference magnet 12a from the inner side of the circumference of the sputtering surface 7a surrounding the target 7. The position where the inner peripheral part of the part 21 enters into the inner side” and “a part of the outer peripheral part of the outer peripheral magnet 12a (in this example, the parts 12a ₁ and 12a ₂ on the moving direction side) are relative to the inner peripheral part of the inner shielding part 21 and beyond to the position on the outer peripheral side", and move between these two positions.

In the sputtering film-forming apparatus 1E of the present example described above, the plasma of the sputtering gas is generated by the magnetic field generated at the time of discharge and captured by the magnet means 10A to 10E of the magnet apparatus 10a. By being shielded by the inner shielding portion 21 arranged close to the outer peripheral portion of the target 7 and set to a floating potential, it can be prevented from reaching the inner shielding portion 21 provided around the inner shielding portion 21 and set to a ground potential and The case where the outer shielding portions 22 are made of conductive material and are in contact with each other.

As a result, according to this example, as in the cases of the first to fourth examples described above, it is possible to avoid the disappearance of the plasma caused by the electric charge of the ions in the plasma coming into contact with the shielding portion 22 outside the ground potential. , the plasma reaches the outer peripheral portion of the sputtering surface 7a of the target 7, and by this, the generation of non-eroded regions at the outer peripheral portion of the sputtering surface 7a of the target 7 can be suppressed, so that the cause can be prevented. Decreases in film-forming properties due to peeling of sputtered particles adhering to the non-eroded region of the target 7 .

Furthermore, in this example, since the magnet device 10a having the plurality of magnet means 10A to 10E is used, the concentration of electric power to the magnetic field can be alleviated, and thereby, there is an effect that the input electric power can be increased.

In addition, in the above-mentioned example, the case where the magnet device 10a having the five magnet means 10A to 10E is provided was described as an example, but the present invention is not limited to this, and can be applied to In the case of having 6 or more magnet means.

In addition, the magnet device 10a of this example can also be applied to the sputter deposition apparatuses 1A to 1D of the second to fifth examples described above.

In particular, in the case of sputtering using the magnet device 10a of the present example, when ions in the plasma move along the "ion from the short side of the outer peripheral magnet 12a of each of the magnet devices 10A to 10E of the magnet device 10a" The parts of the shape protruding to the outside of the plasma generated at the opposite corners of the long sides, changing direction and moving, are the same as the sputter deposition apparatus 1B of the third example and the fifth example when moving. The combination of the sputtering film forming apparatus 1D is effective.

That is, this is because, in the magnet device 10a of this example, at the opposite corners where the ions change their direction from the short side to the long side and move with respect to each of the magnet means 10A to 10E, although the ions It moves along the portion of the shape that protrudes toward the outside of the plasma as described above, but the ions in the plasma are, for example, as shown in FIG. 8 even for the entire magnet device 10a. , at the opposite corners 12c and 12d where the ions change direction from the short side of the outer peripheral magnet 12a of the magnet means 10A and 10E at both ends of the moving direction of the magnet device 10a and move toward the long side. It is because the part of the shape that protrudes from the outside of the pulp moves.

1: Sputtering film forming device 2: Vacuum tank 6: Substrate (object for film formation) 7: Sputtering target 7a: Sputtering surface 7c, 7d: corners 7l: long side 7s: Short side 8: Backplane 10: Magnet device 11: Center magnet 12: Peripheral magnet 21: inner shield 22: Outer shield

[FIG. 1] (a), (b): It shows the first example of the sputtering film forming apparatus of the present invention, and FIG. 1(a) is a partial cross-sectional view showing the internal structure. , Figure 1(b) is a plan view showing the internal structure of important parts [FIG. 2] (a), (b): It shows the second example of the sputtering film forming apparatus of the present invention, and FIG. 2(a) is a partial cross-sectional view showing the internal structure , Figure 2(b) is a plan view showing the internal structure of important parts [FIG. 3] (a), (b): It is a drawing for explaining the purpose of the third example of the sputtering film-forming apparatus of the present invention [FIG. 4] It is a plan view showing the internal structure of important parts of the third example of the sputtering film forming apparatus [FIG. 5] (a), (b): It shows the fourth example of the sputtering film forming apparatus of the present invention, and FIG. 5(a) is a partial cross-sectional view showing the internal structure. , Figure 5(b) is a plan view showing the internal structure of important parts [FIG. 6] It is a plan view showing the internal structure of the fifth example of the sputtering film-forming apparatus of the present invention [FIG. 7] It is a partial cross-sectional view showing an example of a sputtering film forming apparatus using a plurality of magnet devices [FIG. 8] It is a plan view showing the internal structure of an important part of the example of the sputter deposition apparatus using a plurality of magnet devices

1: Sputtering film forming device

2: Vacuum tank

2a: inner wall

3: Vacuum exhaust device

4: Sputtering gas source

5: Substrate holder

6: Substrate (object for film formation)

7: Sputtering target

7a: Sputtering surface

8: Backplane

8a: Insulation

9: Power supply unit

10: Magnet device

11: Center magnet

12: Peripheral magnet

12 ₁ , 12 ₂ : Portions on the moving direction side

13: Magnet fixing plate

14: Mobile Devices

15: Control Department

21: inner shield

22: Outer shield

Claims (8)

A sputtering film-forming apparatus for forming a film on a film-forming object by a magnetron sputtering method in a vacuum, the sputtering film-forming apparatus having: a magnet device for generating a magnetron; It is arranged on the opposite side to the sputtering surface with respect to one sputtering target, moves in the direction along the sputtering surface of the sputtering target during discharge, and the outer shielding portion is attached to the sputtering target. The periphery of the outer peripheral portion of the material is provided opposite to the outer peripheral portion, and is set to the ground potential, and is composed of a conductive material, and serves as a ground shield and an inner shield portion is tied to the outer shield portion. Between the sputtering target and the sputtering target, it is arranged close to the periphery of the outer peripheral portion of the sputtering target, and is set to a floating potential, and the inner shielding portion is prevented from being caused by the magnet device for magnetron generation. The charge of the ions in the plasma captured by the magnetic field contacts the outer shielding portion. The sputtering film-forming apparatus described in claim 1, wherein the inner shielding portion is provided with an overlapping portion overlapping so as to cover the sputtering surface of the sputtering target. The sputtering film-forming apparatus according to claim 2, wherein the overlapping portion of the inner shielding portion is provided so as to cover the sputtering The entire area of the outer periphery of the sputtering surface of the target. The sputtering film-forming apparatus according to claim 2, wherein the overlapping portion of the inner shielding portion is provided at a pair of corners facing the sputtering target formed in a rectangular shape Parts overlap. The sputtering film-forming apparatus according to claim 1, wherein the inner shielding portion is provided with a protruding portion protruding toward the sputtering surface of the sputtering target. The sputtering film-forming apparatus according to claim 5, wherein the protruding portion of the inner shielding portion is provided so as to cover the entire area of the outer peripheral portion of the sputtering surface of the sputtering target. The sputtering film-forming apparatus according to claim 5, wherein the protruding portion of the inner shielding portion is provided at a pair of opposite corners of the sputtering target formed in a rectangular shape . The sputtering film-forming apparatus according to any one of claims 1 to 7, wherein the sputtering target has an outer diameter larger than that of the film-forming object. way to form.

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