TW202010042A - Chuck table and wafer processing method including a holding surface, an outer peripheral suction hole and a suction path - Google Patents

Chuck table and wafer processing method including a holding surface, an outer peripheral suction hole and a suction path Download PDF

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TW202010042A
TW202010042A TW108130351A TW108130351A TW202010042A TW 202010042 A TW202010042 A TW 202010042A TW 108130351 A TW108130351 A TW 108130351A TW 108130351 A TW108130351 A TW 108130351A TW 202010042 A TW202010042 A TW 202010042A
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wafer
holding surface
chuck table
suction hole
outer peripheral
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TWI815953B (en
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山本節男
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Abstract

When a wafer is half-cut, compared with a chuck table having a perforated plate, the problem of cutting chips is reduced, and the unevenness of the wafer attracted and held onto the holding surface is reduced. The present invention provides a chuck table of a cutting device. This cutting device supplies a cutting liquid to the front surface of the wafer and causes the cutting blade to cut at the same time to form a cutting groove. The cutting groove does not reach the back side opposite to the front side of the wafer. The chuck table includes a holding surface, which holds the wafer; an outer peripheral suction hole located on a part of the holding surface covered by the wafer at a position corresponding to the outer peripheral portion of the wafer; and a suction path connected to the outer peripheral suction hole, making the negative pressure from the suction source act on the outer peripheral suction hole. The holding surface other than the outer peripheral suction hole is made of a non-porous material.

Description

卡盤台以及晶圓加工方法Chuck table and wafer processing method

本發明係關於一種保持晶圓時所使用的卡盤台、以及使用此卡盤台的晶圓加工方法。The invention relates to a chuck table used for holding wafers, and a wafer processing method using the chuck table.

當將正面側形成有多個元件的晶圓分割成與各元件對應的多個元件晶片時，在研削晶圓的背面側後，有時會使用將晶圓以切割刀片切割而進行分割的加工方法。然而，若以切割刀片分割研削後的薄薄的晶圓，晶圓上就容易發生稱為崩裂（chipping）的碎片，所以元件晶片的強度（抗彎強度）容易降低。When a wafer formed with a plurality of elements on the front side is divided into a plurality of element wafers corresponding to each element, after grinding the back side of the wafer, a process of dividing the wafer with a dicing blade may be used for division method. However, if the thin wafer after grinding is divided by a dicing blade, chips called chipping are likely to occur on the wafer, so the strength (bending strength) of the element wafer is likely to decrease.

於是，開發了一種加工方法：在晶圓的正面側以切割刀片形成超過研削後的晶圓的精加工厚度且不超過研削前的晶圓厚度的深度的槽之後（即半切斷晶圓後），藉由研削晶圓的背面側，將晶圓分割成元件晶片。Therefore, a processing method was developed: after forming a groove on the front side of the wafer with a dicing blade that exceeds the finishing thickness of the wafer after grinding and does not exceed the depth of the wafer thickness before grinding (that is, after half-cutting the wafer) , By grinding the back side of the wafer, the wafer is divided into component chips.

此加工方法稱為先切割（DBG：Dicing Before Grinding）加工（例如參照專利文獻1）。相較於研削晶圓的背面側後以切割刀片進行分割的加工方法，DBG加工可抑制晶圓背面側所產生的崩裂，所以可提高由晶圓所分割的晶片的抗彎強度。This processing method is called DBG (Dicing Before Grinding) processing (for example, refer to Patent Document 1). Compared with the processing method of dividing the back side of the wafer with a dicing blade, DBG processing can suppress the cracks generated on the back side of the wafer, so the bending strength of the wafer divided by the wafer can be improved.

且說以切割刀片切割晶圓時，晶圓通常被吸引保持於多孔卡盤台的保持面上。一般的多孔卡盤台具有：基台部，其以非多孔質的金屬形成，具有圓板狀的凹部；以及多孔質的多孔板，其嵌入此凹部，具有小於晶圓的直徑。Moreover, when cutting a wafer with a dicing blade, the wafer is usually attracted and held on the holding surface of the porous chuck table. A general porous chuck table has a base portion formed of a non-porous metal and having a disc-shaped concave portion; and a porous porous plate embedded in the concave portion and having a diameter smaller than a wafer.

當採用DBG加工而半切斷晶圓時，由於晶圓尚未被分割成元件晶片，所以通常都是不使切割膠膜介於晶圓與多孔卡盤台之間，而使晶圓的背面接觸多孔卡盤台的保持面。When using the DBG process to cut the wafer in half, the wafer has not been divided into component wafers, so the dicing film is usually not interposed between the wafer and the porous chuck table, but the back of the wafer is in contact with the porous The holding surface of the chuck table.

晶圓的背面接觸多孔板的表面與包圍基台部凹部的平坦部的一部分，多孔板的表面與基台部的平坦部的一部分成為多孔卡盤台的保持面。然後，藉由從設於多孔卡盤台下部的吸引源透過多孔板起作用的負壓，晶圓以保持面吸引保持。此時，在晶圓的背面與位於基台部凹部周圍的平坦部之間，有時會稍微形成間隙。The back surface of the wafer contacts the surface of the porous plate and a part of the flat portion surrounding the concave portion of the base portion, and the surface of the porous plate and a part of the flat portion of the base portion becomes a holding surface of the porous chuck table. Then, the negative pressure acting through the porous plate from the suction source provided at the lower part of the porous chuck table attracts and holds the wafer on the holding surface. At this time, a gap may be slightly formed between the back surface of the wafer and the flat portion located around the concave portion of the base portion.

此間隙有時會成為異物侵入多孔板的路徑。例如，半切斷晶圓時，一邊對切割刀片供給切割液，一邊從晶圓的正面側使切割刀片切入到預定深度，並使晶圓與切割刀片相對移動，但使用於切割的切割液的一部分會和由切割所產生的切割屑一起流出到晶圓的周圍，有時會從此間隙被吸引到多孔板。 [習知技術文獻] [專利文獻]This gap sometimes becomes a path for foreign matter to invade the porous plate. For example, when half-cutting a wafer, while supplying the cutting liquid to the cutting blade, the cutting blade is cut to a predetermined depth from the front side of the wafer, and the wafer and the cutting blade are relatively moved, but a part of the cutting liquid used for cutting It will flow to the periphery of the wafer together with the cutting chips generated by the cutting, and sometimes it will be attracted to the porous plate from this gap. [Conventional Technical Literature] [Patent Literature]

[專利文獻1]日本特開2003-7653號公報[Patent Document 1] Japanese Patent Application Publication No. 2003-7653

[發明所欲解決的課題] 多孔板通常以由具有μm級的細孔的陶瓷等組成的多孔質材料形成，所以若含有切割屑的切割液被吸引到多孔板，切割屑就會聚集於多孔板的細孔，造成多孔卡盤台的吸引力降低。因此，必須交換多孔板或將卡盤台換成新品。此外，被吸引到多孔板的切割屑有時會附著於晶圓的背面。[Problems to be solved by the invention] The porous plate is usually formed of a porous material composed of ceramics with pores in the order of μm, so if the cutting fluid containing cutting chips is attracted to the porous plate, the cutting chips will accumulate in the pores of the porous plate, causing a porous card The attractiveness of the tray is reduced. Therefore, it is necessary to exchange the porous plate or replace the chuck table with a new one. In addition, the cutting chips attracted to the porous plate sometimes adhere to the back surface of the wafer.

此外，在藉由透過以多孔質材料形成的多孔板起作用的負壓而以保持面被保持的晶圓上，容易反映卡盤台的多孔板表面的凹凸。晶圓上產生了起因於此凹凸的變形時，切割晶圓的精度就會降低。In addition, on the wafer held on the holding surface by the negative pressure acting through the porous plate formed of the porous material, the unevenness of the surface of the porous plate of the chuck table is easily reflected. When the wafer is deformed due to the unevenness, the accuracy of cutting the wafer is reduced.

本發明是鑒於這種問題點而完成的，其目的在於當半切斷晶圓時，相較於具有多孔板的卡盤台，減低切割屑的問題，並減低吸引保持於保持面上的晶圓的凹凸。The present invention was completed in view of this problem, and its purpose is to reduce the problem of cutting chips and reduce the attraction of wafers held on the holding surface when compared to a chuck table with a porous plate when the wafer is half-cut Bumps.

[解決課題的技術手段] 根據本發明的一個態樣，提供一種切割裝置的卡盤台，該切割裝置係一邊對晶圓的正面供給切割液，一邊使切割刀片切入，形成切割槽，該切割槽未到達和該晶圓的該正面相反側的背面，其具備：保持面，其保持該晶圓；外周吸引孔，其在被該晶圓覆蓋的該保持面的一部分，設置於與該晶圓外周部對應的位置上；以及吸引路徑，其連接於該外周吸引孔，使來自吸引源的負壓作用於該外周吸引孔；除了該外周吸引孔以外的該保持面係由非多孔質材料組成。[Technical means to solve the problem] According to one aspect of the present invention, there is provided a chuck table of a cutting device that cuts a cutting blade while supplying cutting liquid to the front surface of a wafer to form a cutting groove, the cutting groove does not reach the wafer The back surface on the opposite side of the front surface includes: a holding surface that holds the wafer; an outer peripheral suction hole that is provided at a position corresponding to the outer peripheral portion of the wafer on a portion of the holding surface covered by the wafer And a suction path, which is connected to the peripheral suction hole, so that negative pressure from the suction source acts on the peripheral suction hole; the holding surface except the peripheral suction hole is composed of a non-porous material.

此外，較佳為卡盤台進一步具備：噴出口，其比該保持面的該外周吸引孔位於更靠中央部側，與該晶圓的中央部對應而設置，當從該保持面剝離該晶圓時，噴出流體；以及流體供給路徑，其連接該噴出口與流體供給源。In addition, it is preferable that the chuck table further includes a discharge port, which is located closer to the central portion side than the outer peripheral suction hole of the holding surface, is provided corresponding to the central portion of the wafer, and peels the crystal from the holding surface When round, a fluid is ejected; and a fluid supply path that connects the ejection port to the fluid supply source.

此外，較佳為該外周吸引孔環狀設於該保持面上。In addition, it is preferable that the outer peripheral suction hole is annularly provided on the holding surface.

此外，較佳為該保持面分別以非多孔質的金屬、玻璃或陶瓷形成。In addition, it is preferable that the holding surfaces are formed of non-porous metal, glass, or ceramic, respectively.

此外，根據本發明的其他態樣，提供一種晶圓加工方法，係加工以切割裝置的卡盤台保持的晶圓，該卡盤台具有：保持面，其保持該晶圓；外周吸引孔，其在被該晶圓覆蓋的該保持面的一部分，設置於與該晶圓外周部對應的位置上；以及吸引路徑，其連接於該外周吸引孔，使來自吸引源的負壓作用於該外周吸引孔；除了該外周吸引孔以外的該保持面係由非多孔質材料組成，該晶圓加工方法具備：切割槽形成步驟，其係一邊對以該卡盤台保持的該晶圓的正面供給切割液，一邊使切割刀片切入，形成切割槽，該切割槽未到達和該晶圓的該正面相反側的背面。In addition, according to other aspects of the present invention, there is provided a wafer processing method for processing a wafer held by a chuck table of a dicing device, the chuck table having: a holding surface that holds the wafer; a peripheral suction hole, A part of the holding surface covered by the wafer is provided at a position corresponding to the outer peripheral portion of the wafer; and a suction path connected to the outer peripheral suction hole to apply negative pressure from the suction source to the outer periphery Suction hole; the holding surface except the outer circumferential suction hole is composed of a non-porous material, the wafer processing method includes: a dicing groove forming step, which supplies the front side of the wafer held by the chuck table on one side The dicing solution cuts the dicing blade while forming a dicing groove, and the dicing groove does not reach the back surface opposite to the front surface of the wafer.

此外，較佳為該卡盤台進一步具有：噴出口，其比該保持面的該外周吸引孔位於更靠中央部側，與該晶圓的中央部對應而設置，當從該保持面剝離該晶圓時，噴出流體；以及流體供給路徑，其連接該噴出口與流體供給源，該晶圓加工方法進一步具備：剝離搬送步驟，其係在該切割槽形成步驟之後，從該噴出口使該流體噴出而使該晶圓從該保持面剝離，並在剝離後，藉由配置於該卡盤台上方的搬送單元搬送該晶圓。In addition, it is preferable that the chuck table further has an ejection port, which is located closer to the central portion side than the outer peripheral suction hole of the holding surface, is provided corresponding to the central portion of the wafer, and is peeled off from the holding surface When a wafer is ejected, a fluid is ejected; and a fluid supply path that connects the ejection outlet to the fluid supply source. The wafer processing method further includes: a peeling and conveying step, which is performed from the ejection outlet after the dicing groove forming step The fluid is ejected to peel the wafer from the holding surface, and after the peeling, the wafer is transported by the transport unit disposed above the chuck table.

此外，較佳為從該噴出口噴出的該流體為水。In addition, it is preferable that the fluid ejected from the ejection port is water.

[發明功效] 在關於本發明一個態樣的切割裝置的卡盤台，可用設於與晶圓外周部對應的位置上的外周吸引孔來吸引保持晶圓。此外，除了外周吸引孔以外的保持面係由非多孔質材料組成，所以切割屑不會聚集於細孔，並且相較於具有多孔板的卡盤台，可減低吸引保持於保持面的晶圓上所產生的凹凸。[Effect of invention] In the chuck table of the dicing apparatus according to one aspect of the present invention, the wafer can be attracted and held by the peripheral suction holes provided at the positions corresponding to the peripheral portions of the wafer. In addition, the holding surface other than the peripheral suction hole is composed of a non-porous material, so the cutting chips will not accumulate in the pores, and compared to the chuck table with a porous plate, it can reduce the suction of the wafer held on the holding surface The bumps on the surface.

以茲參照隨附圖式，就關於本發明一態樣的實施形態進行說明。圖1為表示關於第一實施形態的切割裝置2構成構成例的立體圖。如圖1所示，切割裝置2具備支撐各構造的基台4。The embodiment of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a perspective view showing a configuration example of a cutting device 2 according to the first embodiment. As shown in FIG. 1, the cutting device 2 includes a base 4 that supports each structure.

基台4前方的角部設有俯視矩形狀的開口4a，此開口4a內可升降地設有卡匣載置台6。卡匣載置台6的上表面載置收容多片晶圓11的長方體狀的卡匣8。再者，圖1中，為了說明方便起見，只表示卡匣8的輪廓。The corner portion in front of the base 4 is provided with a rectangular opening 4a in plan view, and a cassette mounting table 6 is provided in this opening 4a so as to be able to move up and down. The upper surface of the cassette mounting table 6 mounts a cuboid cassette 8 accommodating a plurality of wafers 11. Furthermore, in FIG. 1, for convenience of explanation, only the outline of the cassette 8 is shown.

晶圓11為以例如矽等材料組成的略圓形的板狀基板，其正面11a（圖1中為上表面）側具有中央的元件區域、以及包圍元件區域的外周剩餘區域。The wafer 11 is a slightly circular plate-shaped substrate composed of a material such as silicon. The front surface 11 a (upper surface in FIG. 1) side has a central element region and a remaining peripheral area surrounding the element region.

元件區域以排列成格子狀的分割預定線（切割道）再被劃分為多個區域，各區域上形成有IC等元件15。此外，晶圓的外周邊上形成有表示結晶方位的切口部17。The element region is divided into a plurality of regions by dividing lines (cut lanes) arranged in a grid, and elements 15 such as ICs are formed on each region. In addition, a cutout 17 indicating the crystal orientation is formed on the outer periphery of the wafer.

再者，對晶圓11的材質、形狀、構造、大小等並無限制。例如，也可以使用由砷化鎵（GaAs）、碳化矽（SiC）等組成的半導體基板、樹脂基板、陶瓷基板等作為晶圓11。同樣地，對元件15的種類、數量、形狀、構造、大小、配置等亦無限制。Furthermore, the material, shape, structure, size, etc. of the wafer 11 are not limited. For example, a semiconductor substrate made of gallium arsenide (GaAs), silicon carbide (SiC), or the like, a resin substrate, a ceramic substrate, or the like may be used as the wafer 11. Similarly, the type, number, shape, structure, size, arrangement, etc. of the elements 15 are not limited.

卡匣載置台6的側面設有在X軸方向（前後方向、加工進給方向）長的矩形狀的開口4b。此開口4b內設有X軸移動台10、使X軸移動台10在X軸方向移動的X軸移動機構（加工進給手段）（未圖示）、以及覆蓋X軸移動機構的蛇腹狀的防塵防滴蓋12。The side surface of the cassette mounting table 6 is provided with a rectangular opening 4b that is long in the X-axis direction (front-rear direction, processing feed direction). The opening 4b is provided with an X-axis moving table 10, an X-axis moving mechanism (processing and feeding means) (not shown) for moving the X-axis moving table 10 in the X-axis direction, and a bellows-shaped covering the X-axis moving mechanism Dustproof and anti-drip cover 12.

X軸移動機構具備與X軸方向平行的一對X軸導軌（未圖示），X軸導軌上可滑動地設有X軸移動台10。X軸移動台10的下表面側設有螺母部（未圖示），與X軸導軌平行的X軸滾珠螺桿（未圖示）以可旋轉的態樣連結於此螺母部。The X-axis moving mechanism includes a pair of X-axis guide rails (not shown) parallel to the X-axis direction, and the X-axis moving table 10 is slidably provided on the X-axis guide rails. A nut portion (not shown) is provided on the lower surface side of the X-axis moving table 10, and an X-axis ball screw (not shown) parallel to the X-axis guide rail is rotatably connected to this nut portion.

X軸脈衝馬達（未圖示）連結於X軸滾珠螺桿的一端部。藉由以X軸脈衝馬達使X軸滾珠螺桿旋轉，X軸移動台10會沿著X軸導軌在X軸方向移動。An X-axis pulse motor (not shown) is connected to one end of the X-axis ball screw. By rotating the X-axis ball screw with the X-axis pulse motor, the X-axis moving table 10 moves in the X-axis direction along the X-axis guide rail.

X軸移動台10的上方設有吸引保持晶圓11的卡盤台14。卡盤台14和馬達等旋轉驅動源（未圖示）連結，繞與Z軸方向（垂直方向）平行的旋轉軸旋轉。此外，卡盤台14以上述X軸移動機構在X軸方向被進行加工進給。A chuck table 14 that attracts and holds the wafer 11 is provided above the X-axis moving table 10. The chuck table 14 is connected to a rotation drive source (not shown) such as a motor, and rotates about a rotation axis parallel to the Z-axis direction (vertical direction). In addition, the chuck table 14 is processed and fed in the X-axis direction by the X-axis moving mechanism.

卡盤台14的表面（即上表面）成為保持面14a，吸引保持和晶圓11的正面11a為相反側的背面11b。此保持面14a通過設於卡盤台14內部的吸引路徑14d，和吸引源44（參照圖3以及圖4等）連接。The surface (that is, the upper surface) of the chuck table 14 becomes the holding surface 14 a, and attracts and holds the back surface 11 b on the opposite side to the front surface 11 a of the wafer 11. This holding surface 14 a is connected to a suction source 44 (see FIGS. 3 and 4, etc.) through a suction path 14 d provided inside the chuck table 14.

和切割裝置2的開口4b接近的位置上設有搬送裝置16，該搬送裝置16係從卡匣8取出上述晶圓11而搬送到卡盤台14。晶圓11以正面11a側露出於上方的方式被搬送裝置16吸引背面11b側，保持於搬送裝置16上。搬送裝置16將保持的晶圓11搬送到第一搬送單元24的正下方。A transport device 16 is provided at a position close to the opening 4 b of the dicing device 2. The transport device 16 takes out the wafer 11 from the cassette 8 and transports it to the chuck table 14. The wafer 11 is attracted to the back surface 11 b side by the transport device 16 so that the front surface 11 a side is exposed upward, and held on the transport device 16. The transfer device 16 transfers the held wafer 11 directly below the first transfer unit 24.

門型的第一支撐構造18以跨過開口4b的方式配置於基台4的上表面。第一支撐構造18的前面固定有與Y軸方向（左右方向、分度進給方向）平行的第一軌道20，第一搬送單元24透過第一升降單元22而連結於此第一軌道20。The door-shaped first support structure 18 is arranged on the upper surface of the base 4 so as to straddle the opening 4b. A first rail 20 parallel to the Y-axis direction (left-right direction, indexing feed direction) is fixed to the front of the first support structure 18, and the first transport unit 24 is connected to the first rail 20 through the first lifting unit 22.

第一搬送單元24在和第一升降單元22相反側，具有吸引晶圓11的吸引面24a（參照圖4）。吸引面24a上設有以非接觸吸附晶圓11的正面11a用的吸引墊24b。The first transfer unit 24 has a suction surface 24 a (refer to FIG. 4) that attracts the wafer 11 on the side opposite to the first lift unit 22. The suction surface 24a is provided with a suction pad 24b for suctioning the front surface 11a of the wafer 11 in a non-contact manner.

吸引墊24b為所謂的白努利卡盤（Bernoulli chuck），藉由向位於下方的晶圓11噴射空氣而在吸引墊24b的底部與晶圓11之間形成空氣的流動，使吸引晶圓11用的負壓產生。在由負壓產生的吸引力、以及來自吸引墊24b的空氣的噴射壓力和晶圓11的重力平衡的位置，晶圓11被吸引墊24b以非接觸吸引保持。The suction pad 24b is a so-called Bernoulli chuck (Bernoulli chuck), and by blowing air to the wafer 11 located below, a flow of air is formed between the bottom of the suction pad 24b and the wafer 11 to attract the wafer 11 The negative pressure generated. At a position where the suction force generated by the negative pressure and the ejection pressure of the air from the suction pad 24b are balanced with the gravity of the wafer 11, the wafer 11 is held by the suction pad 24b by non-contact suction.

第一搬送單元24藉由第一升降單元22在Z軸方向移動，沿著第一軌道20在Y軸方向移動。以搬送裝置16從卡匣8所搬送的晶圓11交給第一搬送單元24，配置於卡盤台14上。The first transport unit 24 moves in the Z-axis direction by the first lifting unit 22 and moves in the Y-axis direction along the first rail 20. The wafer 11 transferred from the cassette 8 by the transfer device 16 is delivered to the first transfer unit 24 and arranged on the chuck table 14.

在第一支撐構造18的前面，與Y軸方向平行的第二軌道26固定於第一軌道20的上方，第二搬送單元30透過第二升降單元28而連結於此第二軌道26。第二搬送單元30藉由第二升降單元28在Z軸方向移動，沿著第二軌道26在Y軸方向移動。In front of the first support structure 18, a second rail 26 parallel to the Y-axis direction is fixed above the first rail 20, and the second transport unit 30 is connected to the second rail 26 through the second lifting unit 28. The second transport unit 30 moves in the Z-axis direction by the second elevating unit 28 and moves in the Y-axis direction along the second rail 26.

第二搬送單元30和第一搬送單元24同樣地，在和第二升降單元28相反側，具有吸引晶圓11的吸引面（未圖示）。吸引面分別具有圓筒形狀，具有可用非接觸吸引保持晶圓11的多個吸引墊（未圖示）。Like the first transfer unit 24, the second transfer unit 30 has a suction surface (not shown) that suctions the wafer 11 on the side opposite to the second lift unit 28. The suction surfaces each have a cylindrical shape, and have a plurality of suction pads (not shown) that can hold and hold the wafer 11 by non-contact suction.

第一支撐構造18的後方配置有門型的第二支撐構造32。在第二支撐構造32的前面，分別透過移動單元34而設有兩組刀片單元36。刀片單元36藉由移動單元34在Y軸方向以及Z軸方向移動。A gate-shaped second support structure 32 is arranged behind the first support structure 18. In front of the second support structure 32, two sets of blade units 36 are provided through the moving units 34, respectively. The blade unit 36 is moved in the Y-axis direction and the Z-axis direction by the moving unit 34.

各刀片單元36具備被可旋轉支撐的主軸36a（參照圖3）。圓環狀的切割刀片38安裝於主軸36a的一端側。馬達（未圖示）分別連結於主軸36a的另一端側，切割刀片38以從馬達傳送的旋轉力旋轉。使切割刀片38旋轉，藉由使此切割刀片38切入以卡盤台14吸引保持的晶圓11，可加工晶圓11。Each blade unit 36 includes a spindle 36a that is rotatably supported (see FIG. 3 ). A circular cutting blade 38 is attached to one end side of the main shaft 36a. Motors (not shown) are respectively connected to the other end side of the main shaft 36a, and the cutting blade 38 rotates with the rotational force transmitted from the motor. The dicing blade 38 is rotated, and by cutting the dicing blade 38 into the wafer 11 attracted and held by the chuck table 14, the wafer 11 can be processed.

圓形狀的開口4c設於相對於開口4b和開口4a為相反側的位置上。開口4c內配置有清洗晶圓11的清洗單元40。以切割刀片38加工過的晶圓11被以第二搬送單元30搬送到清洗單元40。以清洗單元40清洗過的晶圓11被從第一搬送單元24交給搬送裝置16，搬入卡匣8。The circular opening 4c is provided at a position opposite to the opening 4b and the opening 4a. A cleaning unit 40 for cleaning the wafer 11 is arranged in the opening 4c. The wafer 11 processed by the dicing blade 38 is transported to the cleaning unit 40 by the second transport unit 30. The wafer 11 cleaned by the cleaning unit 40 is transferred from the first transfer unit 24 to the transfer device 16 and transferred into the cassette 8.

其次，就配置於X軸移動台10上的卡盤台14的構成進行說明。圖2（A）為晶圓11與卡盤台14的立體圖，圖2（B）為被卡盤台14吸引保持的晶圓11的立體圖。Next, the structure of the chuck table 14 disposed on the X-axis moving table 10 will be described. FIG. 2(A) is a perspective view of the wafer 11 and the chuck table 14, and FIG. 2(B) is a perspective view of the wafer 11 sucked and held by the chuck table 14.

卡盤台14具有大於晶圓11的直徑的保持面14a。例如，切割直徑300mm的晶圓11時，卡盤台14的保持面14a的直徑為310mm。The chuck table 14 has a holding surface 14 a larger than the diameter of the wafer 11. For example, when cutting a wafer 11 with a diameter of 300 mm, the diameter of the holding surface 14 a of the chuck table 14 is 310 mm.

卡盤台14與保持面14a（但是後述的外周吸引孔14b以及噴出口14c除外）以非多孔質的金屬、玻璃或陶瓷形成。藉由以緻密的材料（即非多孔質材料）形成保持面14a，在以保持面14a吸引保持晶圓11時，相較於具有多孔板的卡盤台，可減低晶圓11上所產生的凹凸。The chuck table 14 and the holding surface 14a (except for the outer peripheral suction hole 14b and the ejection port 14c described later) are formed of non-porous metal, glass, or ceramic. By forming the holding surface 14a with a dense material (that is, non-porous material), when the holding surface 14a attracts and holds the wafer 11, compared to a chuck table with a porous plate, the generation of the wafer 11 can be reduced Bump.

將卡盤台14的保持面14a的中心與晶圓11的中心進行對位並在保持面14a上配置有晶圓11時，保持面14a的一部分為晶圓11所覆蓋。在為此晶圓11所覆蓋的區域上設有吸引保持晶圓11的外周吸引孔14b。When the center of the holding surface 14a of the chuck table 14 is aligned with the center of the wafer 11 and the wafer 11 is arranged on the holding surface 14a, a part of the holding surface 14a is covered by the wafer 11. In the area covered by the wafer 11 for this purpose, an outer peripheral suction hole 14 b for suctioning and holding the wafer 11 is provided.

此外周吸引孔14b環狀設於與晶圓11的外周部11c對應的位置上。外周吸引孔14b雖然設於例如與晶圓11的外周剩餘區域對應的區域上，但也可以設於與晶圓11的元件區域對應的區域的一部分上。In addition, the circumferential suction holes 14b are annularly provided at positions corresponding to the outer peripheral portion 11c of the wafer 11. Although the outer peripheral suction hole 14b is provided in, for example, a region corresponding to the remaining peripheral region of the wafer 11, it may be provided in a part of the region corresponding to the element region of the wafer 11.

將保持面14a的中心與晶圓11的中心進行對位並在保持面14a上配置有晶圓11時，外周吸引孔14b比晶圓11的外周部11c位於更內側。本實施形態的外周吸引孔14b為一連接的環狀的孔，具有292mm的外徑。此外，外周吸引孔14b具有1mm以上2mm以下的寬度，所以具有290mm以上291mm以下的內徑。When the center of the holding surface 14a is aligned with the center of the wafer 11 and the wafer 11 is arranged on the holding surface 14a, the outer circumferential suction hole 14b is located more inside than the outer circumferential portion 11c of the wafer 11. The outer peripheral suction hole 14b of this embodiment is a continuous ring-shaped hole having an outer diameter of 292 mm. In addition, the outer peripheral suction hole 14b has a width of 1 mm or more and 2 mm or less, so it has an inner diameter of 290 mm or more and 291 mm or less.

再者，若過度加大外周吸引孔14b的寬度，則在通過外周吸引孔14b吸引晶圓11時，晶圓11會彎曲，以刀片單元36形成於晶圓11上的切割槽11d（參照圖4）的深度的控制就會變得困難。因此，外周吸引孔14b的寬度較佳為設定為2mm以下。Furthermore, if the width of the peripheral suction hole 14b is excessively increased, the wafer 11 will bend when the wafer 11 is sucked through the peripheral suction hole 14b, and the dicing groove 11d formed on the wafer 11 by the blade unit 36 (refer to FIG. 4) The control of depth will become difficult. Therefore, the width of the peripheral suction hole 14b is preferably set to 2 mm or less.

將保持面14a的中心與晶圓11的中心進行對位並在保持面14a上配置有晶圓11時，晶圓11的外周部11c位於外周吸引孔14b的外徑與卡盤台14的外周端部之間。外周吸引孔14b的外緣從卡盤台14的外周端部離開例如5mm至6mm程度。When the center of the holding surface 14a and the center of the wafer 11 are aligned and the wafer 11 is arranged on the holding surface 14a, the outer peripheral portion 11c of the wafer 11 is located on the outer diameter of the outer peripheral suction hole 14b and the outer periphery of the chuck table 14 Between the ends. The outer edge of the outer circumferential suction hole 14b is separated from the outer circumferential end of the chuck table 14 by, for example, approximately 5 mm to 6 mm.

吸引路徑14d連接於外周吸引孔14b，吸引路徑14d透過電磁閥42而連接於吸引源44（參照圖3）。藉由使電磁閥42成為打開狀態，可使來自吸引源44的負壓作用於外周吸引孔14b，藉由來自外周吸引孔14b的負壓，晶圓11被以保持面14a吸引保持。The suction path 14d is connected to the outer circumferential suction hole 14b, and the suction path 14d is connected to the suction source 44 through the solenoid valve 42 (see FIG. 3 ). By opening the solenoid valve 42, the negative pressure from the suction source 44 can be applied to the outer circumferential suction hole 14 b, and the negative pressure from the outer circumferential suction hole 14 b causes the wafer 11 to be held by the holding surface 14 a.

再者，卡盤台14的保持面14a在比外周吸引孔14b更靠中央部側，未設置吸引晶圓11的環狀的吸引孔。此外，也未設置和元件晶片略同等的格子狀的槽或吸引孔。In addition, the holding surface 14a of the chuck table 14 is closer to the central portion side than the outer peripheral suction hole 14b, and no ring-shaped suction hole for sucking the wafer 11 is provided. In addition, there are no lattice-shaped grooves or suction holes that are slightly equivalent to the element wafer.

此外，本實施形態的卡盤台14可用非多孔質的金屬、玻璃或陶瓷等單一的材料製造整個卡盤台14。因此，相較於使用多孔板與金屬製的基台部兩者製造卡盤台14的情況，可減低製造成本。不過，卡盤台14的材料若是非多孔質材料，則不受金屬、玻璃或陶瓷限定。In addition, the chuck table 14 of this embodiment can be made of a single material such as non-porous metal, glass, or ceramics. Therefore, compared with the case where the chuck table 14 is manufactured using both the porous plate and the metal base portion, the manufacturing cost can be reduced. However, if the material of the chuck table 14 is a non-porous material, it is not limited by metal, glass, or ceramic.

非多孔質的金屬、玻璃或陶瓷的透氣性比多孔板明顯較低。因此，如同本實施形態用非多孔質材料形成的卡盤台14不用特意形成外周吸引孔14b等貫穿孔，就可使來自吸引源44的負壓無法作用於配置於保持面14a上的晶圓11。Non-porous metals, glass or ceramics have significantly lower air permeability than porous plates. Therefore, as in the chuck table 14 formed of a non-porous material in the present embodiment, it is possible to prevent negative pressure from the suction source 44 from acting on the wafer disposed on the holding surface 14a without intentionally forming through holes such as peripheral suction holes 14b. 11.

換言之，用非多孔質材料形成的本實施形態的卡盤台14並未如同多孔板，具有從保持面連接到保持面相反側之面的μm級的細孔，取而代之的是具有連接於吸引路徑14d的mm級的吸引孔。In other words, the chuck table 14 of the present embodiment formed of a non-porous material is not like a porous plate, and has pores of the order of μm connected from the holding surface to the surface on the opposite side of the holding surface, and instead has a connection to the suction path 14d mm-level suction holes.

本實施形態的保持面14a用非多孔質的金屬等形成，而不是具有μm級的細孔的多孔質材料，所以不會產生切割屑聚集於多孔板的細孔這種事態。因此，可防止切割屑附著於晶圓11的背面11b的情形。The holding surface 14a of the present embodiment is formed of a non-porous metal or the like, and is not a porous material having pores in the order of μm, so that there is no possibility that cutting chips accumulate in the pores of the porous plate. Therefore, it is possible to prevent the swarf from adhering to the back surface 11 b of the wafer 11.

此外，本實施形態的外周吸引孔14b具有1mm以上的寬度，所以即使是從配置於保持面14a上的晶圓11的背面11b與保持面14a之間的微小的間隙吸引了切割屑等到外周吸引孔14b，相較於多孔板的情況，切割屑也難以聚集於外周吸引孔14b。In addition, since the outer peripheral suction hole 14b of this embodiment has a width of 1 mm or more, even if a small gap between the back surface 11b of the wafer 11 disposed on the holding surface 14a and the holding surface 14a attracts cutting chips and the like to the outer peripheral suction Compared with the case of a porous plate, the hole 14b is less likely to collect cutting chips in the outer peripheral suction hole 14b.

本實施形態的卡盤台14進一步具有：噴出口14c，其比保持面14a的外周吸引孔14b位於更靠中央部側。將保持面14a的中心與晶圓11的中心進行對位並在保持面14a上配置有晶圓11時，噴出口14c設置成與晶圓11的中央部對應。本實施形態的噴出口14c位於圓形保持面14a的大致中心，為具有1mm至6mm程度的直徑的孔的開口部。The chuck table 14 of this embodiment further includes a discharge port 14c, which is located closer to the center than the outer peripheral suction hole 14b of the holding surface 14a. When the center of the holding surface 14a is aligned with the center of the wafer 11 and the wafer 11 is arranged on the holding surface 14a, the ejection port 14c is provided to correspond to the central portion of the wafer 11. The discharge port 14c of this embodiment is located at the approximate center of the circular holding surface 14a, and is an opening of a hole having a diameter of approximately 1 mm to 6 mm.

再者，本實施形態的噴出口14c也可以在保持面14a的中心附近的周圍設置2個以上。例如，可以隔著保持面14a的中心位置設置2個噴出口14c，也可以以保持面14a的中心位置為對稱中心而將3個噴出口14c配置成3重對稱。In addition, in the present embodiment, two or more ejection ports 14c may be provided around the center of the holding surface 14a. For example, two ejection ports 14c may be provided across the center position of the holding surface 14a, or the three ejection ports 14c may be arranged in triple symmetry with the center position of the holding surface 14a as the center of symmetry.

其他，也可以在保持面14a的中心附近的周圍設置4個以上的噴出口14c。此情況，4個以上的噴出口14c在保持面14a的中心附近的圓周上，不連續地配置成以保持面14a的中心位置為對稱中心而形成N重對稱（N為4以上的自然數）。In addition, four or more ejection ports 14c may be provided around the center of the holding surface 14a. In this case, four or more ejection ports 14c are discontinuously arranged on the circumference near the center of the holding surface 14a so as to form N-fold symmetry (N is a natural number of 4 or more) with the center position of the holding surface 14a as the center of symmetry .

噴出口14c連接於設於卡盤台14內部的流體供給路徑14e，流體供給路徑14e透過電磁閥46而連接於流體供給源48（參照圖3）。藉由使電磁閥46成為打開狀態，可從流體供給源48對噴出口14c供給水、空氣或者水與空氣的混合物等流體。The ejection port 14c is connected to a fluid supply path 14e provided inside the chuck table 14, and the fluid supply path 14e is connected to a fluid supply source 48 through a solenoid valve 46 (see FIG. 3). By bringing the solenoid valve 46 into an open state, fluid such as water, air, or a mixture of water and air can be supplied from the fluid supply source 48 to the discharge port 14c.

在本實施形態，當從保持面14a剝離晶圓11時，使連接於吸引源44的電磁閥42成為關閉狀態，使連接於流體供給源48的電磁閥46成為打開狀態。藉此，可從噴出口14c對保持面14a上的晶圓11噴出水等流體。In this embodiment, when the wafer 11 is peeled from the holding surface 14a, the solenoid valve 42 connected to the suction source 44 is closed, and the solenoid valve 46 connected to the fluid supply source 48 is opened. Thereby, fluid such as water can be ejected from the ejection port 14c to the wafer 11 on the holding surface 14a.

從噴出口14c將流體如同向上推起般地噴出，就會在保持面14a與晶圓11的背面11b之間產生間隙，所以藉由第一搬送單元24的吸引墊24b，容易從保持面14a提升晶圓11。The fluid is ejected as if it is pushed up from the ejection port 14c, and a gap is created between the holding surface 14a and the back surface 11b of the wafer 11. Therefore, the suction pad 24b of the first transfer unit 24 makes it easy to get out of the holding surface 14a Raise wafer 11.

其次，就切割以卡盤台14吸引保持的晶圓11之晶圓11加工方法進行說明。圖3為表示半切斷晶圓11時的狀態的局部剖面側視圖。再者，圖3中，吸引路徑14d、流體供給路徑14e、電磁閥42與46、吸引源44、以及流體供給源48以簡化的記號表示。Next, the wafer 11 processing method of cutting the wafer 11 sucked and held by the chuck table 14 will be described. 3 is a partial cross-sectional side view showing a state when the wafer 11 is half-cut. In FIG. 3, the suction path 14d, the fluid supply path 14e, the solenoid valves 42 and 46, the suction source 44, and the fluid supply source 48 are indicated by simplified symbols.

在本實施形態，使用上述的刀片單元36半切斷晶圓11。刀片單元36具有：一對噴嘴36b，其等設置成夾著切割刀片38的兩面，各自為略圓筒形狀。In this embodiment, the wafer 11 is half-cut using the blade unit 36 described above. The blade unit 36 has a pair of nozzles 36b, which are provided so as to sandwich both sides of the cutting blade 38, and each has a substantially cylindrical shape.

噴嘴36b在切割時，對切割刀片38與晶圓11的接觸點（即加工點）供給切割液36c（純水等水）。切割液36c具有下述功能：去除例如藉由以切割刀片38切割晶圓11所產生的切割屑。During the dicing, the nozzle 36b supplies the dicing fluid 36c (water such as pure water) to the contact point (that is, the processing point) between the dicing blade 38 and the wafer 11. The dicing fluid 36c has a function of removing swarf generated by cutting the wafer 11 with the dicing blade 38, for example.

如上所述，本實施形態的保持面14a既沒有如同使用多孔板的卡盤台那樣，切割屑會聚集於細孔的情形，也沒有切割屑會附著於晶圓11的背面11b的情形。此外，即使是從晶圓11的背面11b與保持面14a之間的微小間隙吸引了切割屑等到外周吸引孔14b，相較於多孔板的情況，切割屑也難以聚集於外周吸引孔14b。As described above, the holding surface 14a of the present embodiment does not have swarf accumulating in the fine holes as in the chuck table using a perforated plate, nor does the swarf adhere to the back surface 11b of the wafer 11. In addition, even if a small gap between the back surface 11b of the wafer 11 and the holding surface 14a attracts swarf or the like to the outer peripheral suction hole 14b, the swarf is less likely to collect in the outer peripheral suction hole 14b compared to the case of a porous plate.

在半切斷晶圓11的切割步驟（即切割槽形成步驟），首先，將保持面14a的中心與晶圓11的中心進行對位，在保持面14a上配置晶圓11。其次，使連接於吸引源44的電磁閥42成為打開狀態，以保持面14a吸引保持晶圓11。再者，此時，連接於流體供給源48的電磁閥46為關閉狀態。In the dicing step of the half-cut wafer 11 (that is, the dicing groove forming step), first, the center of the holding surface 14 a and the center of the wafer 11 are aligned, and the wafer 11 is arranged on the holding surface 14 a. Next, the solenoid valve 42 connected to the suction source 44 is opened, and the wafer 11 is sucked and held by the holding surface 14a. Furthermore, at this time, the solenoid valve 46 connected to the fluid supply source 48 is in a closed state.

其後，一邊對正面11a供給切割液36c，一邊使以高速旋轉的切割刀片38切入晶圓11，形成未到達晶圓11的背面11b的切割槽11d。使用後的切割液36d的一部分會順著晶圓11的正面11a以及卡盤台14的側面，落下到例如開口4b的防塵防滴蓋12。沿著設定於晶圓11上的所有分割預定線形成切割槽11d後，結束半切斷晶圓11的切割步驟。Thereafter, while supplying the dicing solution 36c to the front surface 11a, the dicing blade 38 rotating at a high speed is cut into the wafer 11 to form a dicing groove 11d that does not reach the back surface 11b of the wafer 11. A part of the dicing solution 36d after use falls along the front surface 11a of the wafer 11 and the side surface of the chuck table 14 to the dust-proof and drip-proof cover 12 of the opening 4b, for example. After forming the dicing grooves 11d along all the planned dividing lines set on the wafer 11, the dicing step of the half-cut wafer 11 is ended.

其次，就剝離搬送步驟進行說明，該剝離搬送步驟係使半切斷後的晶圓11從保持面14a剝離，其後，使用配置於該卡盤台上方的第一搬送單元24搬送晶圓11。圖4為表示搬送半切斷後的晶圓11時的狀態的局部剖面側視圖。再者，圖4中，和圖3同樣，以簡化的記號表示吸引路徑14d等。Next, a peeling and transporting step will be described in which the half-cut wafer 11 is peeled from the holding surface 14a, and then the wafer 11 is transported using the first transporting unit 24 disposed above the chuck table. 4 is a partial cross-sectional side view showing a state when the wafer 11 after half-cutting is transferred. In addition, in FIG. 4, similar to FIG. 3, the suction path 14 d and the like are indicated by simplified symbols.

在本實施形態的剝離搬送步驟，使用上述的第一搬送單元24將半切斷後的晶圓11從卡盤台14搬送到例如清洗單元40。當剝離晶圓11時，首先，使連接於吸引源44的電磁閥42成為關閉狀態，使連接於流體供給源48的電磁閥46成為打開狀態。In the peeling and transferring step of this embodiment, the half-cut wafer 11 is transferred from the chuck table 14 to, for example, the cleaning unit 40 using the first transfer unit 24 described above. When the wafer 11 is peeled off, first, the solenoid valve 42 connected to the suction source 44 is closed, and the solenoid valve 46 connected to the fluid supply source 48 is opened.

然後，從噴出口14c對保持面14a上的晶圓11，使流體噴出1秒至2秒程度後，使電磁閥46成為關閉狀態。如上所述，藉由使流體從噴出口14c噴出，晶圓11被從保持面14a剝離，所以藉由第一搬送單元24的吸引墊24b，容易從保持面14a提升晶圓11。Then, after the fluid is ejected from the ejection port 14c to the wafer 11 on the holding surface 14a for about 1 to 2 seconds, the solenoid valve 46 is closed. As described above, by ejecting the fluid from the ejection port 14c, the wafer 11 is peeled off from the holding surface 14a, so that the suction pad 24b of the first transfer unit 24 can easily lift the wafer 11 from the holding surface 14a.

再者，從噴出口14c噴出的流體，水比空氣較佳。從流體供給源48供給的流體為空氣時，一般空氣比水容易被壓縮，所以從流體供給源48供給的空氣會被暫時儲存在流體供給路徑14e。然後，當流體供給路徑到達預定的壓力時，晶圓11會從保持面14a被猛然剝離。如此，若從保持面14a猛然剝離晶圓11，晶圓11就可能會受到損傷或破損。Furthermore, the fluid ejected from the ejection port 14c is preferably water than air. When the fluid supplied from the fluid supply source 48 is air, air is generally easier to compress than water, so the air supplied from the fluid supply source 48 is temporarily stored in the fluid supply path 14e. Then, when the fluid supply path reaches a predetermined pressure, the wafer 11 is suddenly peeled off from the holding surface 14a. In this way, if the wafer 11 is suddenly peeled off from the holding surface 14a, the wafer 11 may be damaged or damaged.

對此，從流體供給源48供給的流體為水時，一般水比空氣難以被壓縮，所以若從流體供給源48供給的水到達和流體供給路徑14e略相同的體積，相較於空氣的情況，就會較平穩地從下方推上晶圓11。因此，相較於使用空氣的情況，可較平穩地剝離晶圓11，可減低對晶圓11的損傷等。On the other hand, when the fluid supplied from the fluid supply source 48 is water, water is generally harder to compress than air, so if the water supplied from the fluid supply source 48 reaches a volume that is slightly the same as the fluid supply path 14e, compared to the case of air , It will push the wafer 11 from below more smoothly. Therefore, compared with the case of using air, the wafer 11 can be peeled off more smoothly, and damage to the wafer 11 can be reduced.

晶圓11剝離後，一面以設於第一搬送單元24的吸引墊24b吸引保持晶圓11，一面使第一升降單元22上升。然後，從保持面14a卸下晶圓11，搬送到清洗單元40等。藉此，結束剝離搬送步驟。After the wafer 11 is peeled off, the first lift unit 22 is raised while sucking and holding the wafer 11 by the suction pad 24b provided in the first transfer unit 24. Then, the wafer 11 is unloaded from the holding surface 14a and transferred to the cleaning unit 40 or the like. With this, the peeling and transferring step is ended.

其次，就卡盤台14的第二實施形態進行說明。在此第二實施形態，環狀且離散地設有外周吸引孔14b。圖5為關於第二實施形態的卡盤台14與晶圓11的立體圖。第二實施形態的卡盤台14具有將第一實施形態的外周吸引孔14b在圓周方向進行略四分割的4個圓弧狀的外周吸引孔14b1 、14b2 、14b3 以及14b4 。Next, the second embodiment of the chuck table 14 will be described. In this second embodiment, the peripheral suction holes 14b are provided annularly and discretely. FIG. 5 is a perspective view of the chuck table 14 and the wafer 11 of the second embodiment. The chuck table 14 of the second embodiment has four circular arc-shaped outer peripheral suction holes 14b 1 , 14b 2 , 14b 3 and 14b 4 that divide the outer peripheral suction hole 14b of the first embodiment into four parts in the circumferential direction.

在鄰接於周方向的外周吸引孔14b1 與外周吸引孔14b2 之間設有平坦的平坦部14g1 ，該平坦的平坦部14g1 係以和保持面14a相同的材料形成。即，保持面14a上的外周吸引孔14b1 與外周吸引孔14b2 因平坦部14g1 而成為不連續。Between the outer circumferential suction hole 14b 1 and the outer circumferential suction hole 14b 2 that are adjacent to the circumferential direction, a flat flat portion 14g 1 is formed , and the flat flat portion 14g 1 is formed of the same material as the holding surface 14a. That is, the outer peripheral suction hole 14b 1 and the outer peripheral suction hole 14b 2 on the holding surface 14a become discontinuous due to the flat portion 14g 1 .

同樣地，在外周吸引孔14b2 與外周吸引孔14b3 之間設有平坦部14g2 ，在外周吸引孔14b3 與14b4 之間設有平坦部14g3 ，在外周吸引孔14b4 與14b1 之間設有平坦部14g4 。Likewise, the outer periphery of the suction holes 14b and the outer periphery of the suction hole 2 is provided between the flat portion 14b 14g 2. 3, the outer peripheral suction holes 14b. 3 is provided between the flat portion 14b. 4 and 14g 3, the outer periphery of the suction holes 14b and 14b. 4 A flat portion 14g 4 is provided between 1 .

在第二實施形態，相較於第一實施形態，保持面14a上的外周吸引孔14b的面積雖然減少，但此情況，和晶圓11接觸的保持面14a的平坦區域卻會增加。因此，相較於第一實施形態，可更加提高保持面14a的平坦性。In the second embodiment, the area of the outer peripheral suction hole 14b on the holding surface 14a is reduced compared to the first embodiment, but in this case, the flat area of the holding surface 14a in contact with the wafer 11 is increased. Therefore, the flatness of the holding surface 14a can be improved more than in the first embodiment.

其次，就第三實施形態進行說明。在此第三實施形態，連接噴出口14c與流體供給源48的流體供給路徑14e和吸引路徑14d連接。圖6為關於第三實施形態的卡盤台14等的局部剖面側視圖。在第三實施形態的卡盤台14，雖然吸引路徑14d與流體供給路徑14e以連接點14f連接，但其他之點都和第一實施形態的卡盤台14相同。Next, the third embodiment will be described. In the third embodiment, the fluid supply path 14e and the suction path 14d connecting the ejection port 14c and the fluid supply source 48 are connected. 6 is a partial cross-sectional side view of the chuck table 14 and the like according to the third embodiment. In the chuck table 14 of the third embodiment, although the suction path 14d and the fluid supply path 14e are connected by the connection point 14f, the other points are the same as the chuck table 14 of the first embodiment.

在使用關於第三實施形態的卡盤台14半切斷晶圓11的切割步驟（即切割槽形成步驟），首先，藉由使連接於吸引源44的電磁閥42成為打開狀態，使來自吸引源44的負壓作用於外周吸引孔14b以及噴出口14c。In the dicing step (that is, the dicing groove forming step) of half-cutting the wafer 11 using the chuck table 14 according to the third embodiment, first, the solenoid valve 42 connected to the suction source 44 is opened, so that The negative pressure of 44 acts on the outer peripheral suction hole 14b and the ejection port 14c.

藉此，以外周吸引孔14b以及噴出口14c吸引保持晶圓11。再者，此時，連接於流體供給路徑14e的電磁閥46為關閉狀態。然後，和第一實施形態同樣，以切割刀片38半切斷晶圓11的正面11a側。Thereby, the wafer 11 is sucked and held by the peripheral suction hole 14b and the ejection port 14c. In this case, the solenoid valve 46 connected to the fluid supply path 14e is closed. Then, as in the first embodiment, the front surface 11a side of the wafer 11 is half-cut with the dicing blade 38.

其次，在第三實施形態的剝離搬送步驟，使電磁閥42成為關閉狀態，使電磁閥46成為打開狀態。藉此，從外周吸引孔14b以及噴出口14c對保持面14a上的晶圓11，使流體噴出1秒至2秒程度。然後，藉由第一搬送單元24的吸引墊24b，將晶圓11提升而進行搬送。Next, in the peeling and conveying step of the third embodiment, the solenoid valve 42 is closed and the solenoid valve 46 is open. As a result, the fluid is ejected from the outer peripheral suction hole 14b and the ejection port 14c to the wafer 11 on the holding surface 14a for about 1 second to 2 seconds. Then, by the suction pad 24b of the first transfer unit 24, the wafer 11 is lifted and transferred.

其他，關於上述實施形態的構造、方法等，只要不脫離本發明目的的範圍，就可以適當變更而實施。例如，可以組合第二以及第三實施形態。In addition, the structure, method, and the like of the above-described embodiment can be appropriately changed and implemented without departing from the scope of the object of the present invention. For example, the second and third embodiments may be combined.

W‧‧‧晶圓 2‧‧‧切割裝置 4‧‧‧基台 4a、4b、4c‧‧‧開口 6‧‧‧卡匣載置台 8‧‧‧卡匣 10‧‧‧X軸移動台 11‧‧‧晶圓 11a‧‧‧晶圓正面 11b‧‧‧晶圓背面 11c‧‧‧外周部 11d‧‧‧切割槽 12‧‧‧防塵防滴蓋 14‧‧‧卡盤台 14a‧‧‧保持面 14b、14b1、14b2、14b3、14b4‧‧‧外周吸引孔 14c‧‧‧噴出口 14d‧‧‧吸引路徑 14e‧‧‧流體供給路徑 14f‧‧‧連接點 14g1、14g2、14g3、14g4‧‧‧平坦部 15‧‧‧元件 16‧‧‧搬送裝置 17‧‧‧切口部 18‧‧‧第一支撐構造 20‧‧‧第一軌道 22‧‧‧第一升降單元 24‧‧‧第一搬送單元 24a‧‧‧吸引面 24b‧‧‧吸引墊 26‧‧‧第二軌道 28‧‧‧第二升降單元 30‧‧‧第二搬送單元 32‧‧‧第二支撐構造 34‧‧‧移動單元 36‧‧‧刀片單元 36a‧‧‧主軸 36b‧‧‧噴嘴 36c‧‧‧切割液 36d‧‧‧使用後的切割液 38‧‧‧切割刀片 40‧‧‧清洗單元 42‧‧‧電磁閥 44‧‧‧吸引源 46‧‧‧電磁閥 48‧‧‧流體供給源W‧‧‧ Wafer 2‧‧‧Cutting device 4‧‧‧Abutment 4a, 4b, 4c‧‧‧‧Opening 6‧‧‧ Cassette mounting table 8‧‧‧Cassette 10‧‧‧X axis moving table 11 ‧‧‧Wafer 11a‧‧‧wafer front 11b‧‧‧wafer back 11c‧‧‧outer periphery 11d‧‧‧cutting groove 12‧‧‧dust and drip-proof cover 14‧‧‧chuck table 14a‧‧‧ holding surfaces 14b, 14b 1, 14b 2, 14b 3, 14b 4 ‧‧‧ outer periphery of the suction holes 14c‧‧‧ ejection outlet 14d‧‧‧ suction path 14e‧‧‧ fluid supplying path 14f‧‧‧ connection point 14g 1, 14g 2 、14g 3 、14g 4 ‧‧‧Flat part 15‧‧‧Element 16‧‧‧Transport device 17‧‧‧Notch part 18‧‧‧First support structure 20‧‧‧First track 22‧‧‧First Lifting unit 24‧‧‧ First conveying unit 24a‧‧‧Suction surface 24b‧‧‧Suction pad 26‧‧‧Second track 28‧‧‧Second lifting unit 30‧‧‧Second conveying unit 32‧‧‧ Two support structure 34‧‧‧Moving unit 36‧‧‧Blade unit 36a‧‧‧Main shaft 36b‧‧‧Nozzle 36c‧‧‧Cutting fluid 36d‧‧‧Cutting fluid after use 38‧‧‧Cutting blade 40‧‧‧ Cleaning unit 42‧‧‧ Solenoid valve 44‧‧‧ Suction source 46‧‧‧ Solenoid valve 48‧‧‧ Fluid supply source

圖1為表示關於第一實施形態的加工裝置構成構成例的立體圖。 圖2（A）為卡盤台與晶圓的立體圖，圖2（B）為被卡盤台吸引保持的晶圓的立體圖。 圖3為表示半切斷晶圓時的狀態的局部剖面側視圖。 圖4為表示搬送半切斷後的晶圓時的狀態的局部剖面側視圖。 圖5為表示第二實施形態的卡盤台與晶圓的立體圖。 圖6為表示第三實施形態的卡盤台等的局部剖面側視圖。FIG. 1 is a perspective view showing a configuration example of a processing device according to a first embodiment. 2(A) is a perspective view of a chuck table and a wafer, and FIG. 2(B) is a perspective view of a wafer attracted and held by the chuck table. 3 is a partial cross-sectional side view showing a state when a wafer is half-cut. FIG. 4 is a partial cross-sectional side view showing a state when a half-cut wafer is transferred. FIG. 5 is a perspective view showing a chuck table and a wafer in the second embodiment. 6 is a partial cross-sectional side view showing a chuck table and the like of the third embodiment.

11‧‧‧晶圓 11‧‧‧ Wafer

11a‧‧‧晶圓正面 11a‧‧‧wafer front

11b‧‧‧晶圓背面 11b‧‧‧wafer back

11c‧‧‧外周部 11c‧‧‧Outer periphery

14‧‧‧卡盤台 14‧‧‧Chuck table

14a‧‧‧保持面 14a‧‧‧Keep

14b‧‧‧外周吸引孔 14b‧‧‧Peripheral suction hole

14c‧‧‧噴出口 14c‧‧‧Spray outlet

17‧‧‧切口部 17‧‧‧Notch

Claims (7)

一種切割裝置的卡盤台，該切割裝置係一邊對晶圓的正面供給切割液，一邊使切割刀片切入晶圓的正面，形成切割槽，該切割槽未到達和該晶圓的該正面為相反側的背面，其特徵在於具備： 保持面，其保持該晶圓； 外周吸引孔，其在被該晶圓覆蓋的該保持面的一部分，設置於與該晶圓外周部對應的位置上；以及 吸引路徑，其連接於該外周吸引孔，使來自吸引源的負壓作用於該外周吸引孔； 除了該外周吸引孔以外的該保持面係由非多孔質材料組成。A chuck table of a cutting device, which supplies cutting liquid to the front surface of a wafer while cutting a cutting blade into the front surface of a wafer to form a cutting groove, the cutting groove does not reach the opposite of the front surface of the wafer The back of the side is characterized by: Holding surface, which holds the wafer; An outer peripheral suction hole provided at a position corresponding to the outer peripheral portion of the wafer at a portion of the holding surface covered by the wafer; and A suction path connected to the peripheral suction hole, so that negative pressure from the suction source acts on the peripheral suction hole; The holding surface except the outer peripheral suction hole is composed of a non-porous material. 如申請專利範圍第1項所述之切割裝置的卡盤台，其中， 進一步具備： 噴出口，其比該保持面的該外周吸引孔位於更靠中央部側，與該晶圓的中央部對應而設置，當從該保持面剝離該晶圓時，噴出流體；以及 流體供給路徑，其連接該噴出口與流體供給源。The chuck table of the cutting device as described in item 1 of the patent scope, wherein, Further equipped with: An ejection port, which is located closer to the center than the outer peripheral suction hole of the holding surface, is provided corresponding to the center of the wafer, and ejects fluid when the wafer is peeled from the holding surface; and The fluid supply path connects the ejection port and the fluid supply source. 如申請專利範圍第1或2項所述之切割裝置的卡盤台，其中， 該外周吸引孔環狀設於該保持面上。The chuck table of the cutting device as described in item 1 or 2 of the patent application, wherein, The outer peripheral suction hole is annularly provided on the holding surface. 如申請專利範圍第1或2項所述之切割裝置的卡盤台，其中， 該保持面分別以非多孔質的金屬、玻璃或陶瓷形成。The chuck table of the cutting device as described in item 1 or 2 of the patent application, wherein, The holding surfaces are formed of non-porous metal, glass, or ceramic, respectively. 一種晶圓加工方法，係加工以切割裝置的卡盤台保持的晶圓，其特徵在於， 該卡盤台具有： 保持面，其保持該晶圓； 外周吸引孔，其在被該晶圓覆蓋的該保持面的一部分，設置於與該晶圓外周部對應的位置上；以及 吸引路徑，其連接於該外周吸引孔，使來自吸引源的負壓作用於該外周吸引孔； 除了該外周吸引孔以外的該保持面係由非多孔質材料組成； 該晶圓加工方法具備： 切割槽形成步驟，其係一邊對以該卡盤台保持的該晶圓的正面供給切割液，一邊使切割刀片切入，形成切割槽，該切割槽未到達和該晶圓的該正面為相反側的背面。A wafer processing method is to process a wafer held by a chuck table of a cutting device, characterized in that: The chuck table has: Holding surface, which holds the wafer; An outer peripheral suction hole provided at a position corresponding to the outer peripheral portion of the wafer at a portion of the holding surface covered by the wafer; and A suction path connected to the peripheral suction hole, so that negative pressure from the suction source acts on the peripheral suction hole; The holding surface except the peripheral suction hole is composed of non-porous material; The wafer processing method has: The dicing groove forming step is to cut the dicing blade while supplying the dicing solution to the front surface of the wafer held by the chuck table to form a dicing groove, the dicing groove does not reach the opposite side of the front surface of the wafer the back of. 如申請專利範圍第5項所述之晶圓加工方法，其中， 該卡盤台進一步具有： 噴出口，其比該保持面的該外周吸引孔位於更靠中央部側，與該晶圓的中央部對應而設置，當從該保持面剝離該晶圓時，噴出流體；以及 流體供給路徑，其連接該噴出口與流體供給源； 該晶圓加工方法進一步具備： 剝離搬送步驟，其係在該切割槽形成步驟之後，從該噴出口使該流體噴出而使該晶圓從該保持面剝離，並在剝離後，藉由配置於該卡盤台上方的搬送單元搬送該晶圓。The wafer processing method as described in item 5 of the patent application scope, in which The chuck table further has: An ejection port, which is located closer to the center than the outer peripheral suction hole of the holding surface, is provided corresponding to the center of the wafer, and ejects fluid when the wafer is peeled from the holding surface; and A fluid supply path, which connects the ejection port and the fluid supply source; The wafer processing method further includes: The peeling and transporting step is that after the dicing groove forming step, the fluid is ejected from the ejection port to peel off the wafer from the holding surface, and after the peeling off, by the transporting unit arranged above the chuck table Transfer the wafer. 如申請專利範圍第6項所述之晶圓加工方法，其中， 從該噴出口噴出的該流體為水。The wafer processing method as described in item 6 of the patent application scope, in which The fluid ejected from the ejection port is water.
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