TW202009997A - Method for processing workpiece capable of suppressing warpage of a workpiece - Google Patents

Method for processing workpiece capable of suppressing warpage of a workpiece Download PDF

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TW202009997A
TW202009997A TW108128709A TW108128709A TW202009997A TW 202009997 A TW202009997 A TW 202009997A TW 108128709 A TW108128709 A TW 108128709A TW 108128709 A TW108128709 A TW 108128709A TW 202009997 A TW202009997 A TW 202009997A
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workpiece
resin
wafer
holding
grinding
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TWI807084B (en
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小松淳
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Threshing Machine Elements (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The object of the present invention is to suppress warpage of a workpiece. The solution is a method for processing a workpiece. In an ultraviolet irradiation step, a liquid resin is hardened to form a resin layer (10) in a state where the temperature is lower than an ambient temperature in a back grinding step. In the back grinding step, a wafer (1) is ground after the temperature of the resin layer (10) is increased. According to the processing method of the present invention, in the resin layer (10), in addition to an inward contraction force (arrow (C)) in the radial direction, an outward expansion force (arrow (D)) in the radial direction due to thermal expansion of the resin layer (10) is also generated. The inward contraction force and the outward expansion force are offset. Therefore, even if the wafer (1) is thinned by grinding, the stretch of wafer (1) due to the resin layer (10) is suppressed, so that warpage of the wafer (1) can be suppressed.

Description

被加工物的加工方法Processing method of workpiece

本發明係關於被加工物的加工方法。The present invention relates to a processing method of a workpiece.

在半導體元件的製造工程中，係在被加工物的表面形成格子狀的切割道(street)。接著，在藉由切割道所被區劃的區域形成IC或LSI等元件。該等被加工物係背面被研削而被薄化成預定的厚度。之後，藉由切削裝置等，被加工物沿著切割道被分割，藉此製造各個半導體元件晶片。In the manufacturing process of a semiconductor element, grid-like scribe streets are formed on the surface of a workpiece. Next, elements such as IC or LSI are formed in the area divided by the scribe line. The back surface of these workpieces is ground and thinned to a predetermined thickness. After that, the workpiece is divided along the scribe line by a cutting device or the like, thereby manufacturing each semiconductor element wafer.

為了將被加工物薄化，在研削該背面時，必須保護形成在被加工物表面的元件。因此，有藉由因受到紫外線的照射而硬化的液狀的紫外線硬化樹脂，來被覆被加工物的表面的手法(參照專利文獻1)。 [先前技術文獻] [專利文獻]In order to thin the workpiece, it is necessary to protect the components formed on the surface of the workpiece when grinding the back surface. Therefore, there is a method of covering the surface of the workpiece with a liquid ultraviolet-curing resin cured by irradiation with ultraviolet rays (see Patent Document 1). [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2009-043931[Patent Literature 1] Japanese Patent Laid-Open 2009-043931

(發明所欲解決之課題)(Problems to be solved by the invention)

但是，紫外線硬化樹脂係因受到紫外線的照射而硬化時進行收縮。因此，背面研削後，被加工物被作收縮的紫外線硬化樹脂拉伸，藉此有在被加工物發生翹曲的情形。被加工物的翹曲係有在之後的工程中，導致搬送不良及被加工物破裂等問題的可能性。 (解決課題之手段)However, the ultraviolet-curable resin system shrinks when cured by being irradiated with ultraviolet rays. Therefore, after the back surface is ground, the workpiece is stretched by the shrinking ultraviolet-curable resin, and thereby the workpiece may be warped. The warpage of the workpiece may cause problems such as poor transport and cracking of the workpiece in the subsequent process. (Means to solve the problem)

本發明之被加工物的加工方法(本加工方法)係將藉由形成為格子狀的複數分割預定線被區劃且在表面形成有元件的被加工物的背面，研削至所希望的厚度的被加工物的加工方法，其特徵為：具備：保持步驟，其係以使形成有該元件的該表面側露出的方式，藉由第1保持平台的第1保持面，吸附保持該被加工物；樹脂被覆步驟，其係對該被加工物的該表面，供給因受到紫外線的照射而硬化的液狀樹脂，以該樹脂被覆該被加工物的該表面；紫外線照射步驟，其係使在該樹脂被覆步驟中被覆該被加工物的該表面的該樹脂，在比背面研削步驟的環境溫度更為低溫的狀態下硬化而形成樹脂層；及背面研削步驟，其係在實施該紫外線照射步驟後，藉由第2保持平台的第2保持面，吸附保持該被加工物的該表面，實施該被加工物的該背面的研削，在比該背面研削步驟的環境溫度更為低溫的狀態下使該樹脂硬化，藉此可減低該被加工物的翹曲。The processing method of the processed object of the present invention (this processing method) is to grind the back surface of the processed object which is divided by a plurality of predetermined division lines formed in a lattice shape and formed with elements on the surface to a desired thickness The processing method of the processed object is characterized by comprising: a holding step of adsorbing and holding the processed object by the first holding surface of the first holding platform so that the surface side on which the element is formed is exposed; A resin coating step, which supplies the surface of the workpiece with a liquid resin that is hardened by ultraviolet irradiation, and covers the surface of the workpiece with the resin; an ultraviolet irradiation step, where the resin The resin covering the surface of the workpiece in the coating step is cured at a temperature lower than the ambient temperature of the back surface grinding step to form a resin layer; and the back surface grinding step is performed after performing the ultraviolet irradiation step, The second holding surface of the second holding platform adsorbs and holds the surface of the workpiece, performs grinding of the back surface of the workpiece, and makes the surface of the workpiece at a temperature lower than the ambient temperature of the back grinding step The resin hardens, thereby reducing the warpage of the workpiece.

在本加工方法中，該樹脂被覆步驟亦可包含：藉由旋塗，藉由該樹脂來被覆該被加工物的該表面。 (發明之效果)In this processing method, the resin coating step may also include: coating the surface of the workpiece with the resin by spin coating. (Effect of invention)

在本加工方法中，在紫外線照射步驟中，在將被加工物的表面上的液狀樹脂的溫度，形成為比背面研削步驟的環境溫度更為低溫的狀態下，使液狀樹脂硬化而形成樹脂層。在之後的背面研削步驟中，提高樹脂層的溫度之後，研削被加工物的背面。In this processing method, in the ultraviolet irradiation step, the temperature of the liquid resin on the surface of the workpiece is formed to be lower than the ambient temperature of the back grinding step, and the liquid resin is hardened to form Resin layer. In the subsequent back grinding step, after raising the temperature of the resin layer, the back of the workpiece is ground.

在本加工方法中，亦在紫外線照射步驟之後，在樹脂層產生徑方向朝內的收縮力。此係起因於液狀樹脂具有在硬化時作收縮的性質。此外，在本加工方法中，至背面研削步驟開始時，樹脂層由紫外線照射步驟中相對較低的溫度，被升溫至背面研削步驟的環境溫度。結果，在樹脂層產生徑方向朝外的膨脹力。該膨脹力係起因於液狀樹脂亦具有伴隨硬化後的溫度上升而熱膨脹的性質。In this processing method, also after the ultraviolet irradiation step, a shrinkage force is generated in the resin layer radially inward. This is because the liquid resin has the property of shrinking when hardened. In addition, in the present processing method, the resin layer is heated up to the ambient temperature of the back surface grinding step by the relatively low temperature in the ultraviolet irradiation step until the back surface grinding step is started. As a result, the resin layer generates expansion force outward in the radial direction. This expansion force is due to the fact that the liquid resin also has the property of thermal expansion as the temperature rises after curing.

因此，在本加工方法中，在樹脂層中，收縮力與膨脹力被相抵。因此，在之後的背面研削步驟中，被加工物的背面被切削，即使被加工物被薄化，由於抑制被加工物因樹脂層而被拉伸的情形，因此可抑制被加工物發生翹曲。Therefore, in this processing method, in the resin layer, the contraction force and the expansion force are offset. Therefore, in the subsequent back grinding step, the back surface of the workpiece is cut, and even if the workpiece is thinned, since the workpiece is suppressed from being stretched by the resin layer, warpage of the workpiece can be suppressed .

此外，本加工方法的該樹脂被覆步驟亦可包含：藉由旋塗，藉由該樹脂來被覆該被加工物的該表面。藉此，可輕易實施藉由液狀樹脂所為之被覆。In addition, the resin coating step of the processing method may further include: coating the surface of the workpiece with the resin by spin coating. By this, the coating by liquid resin can be easily implemented.

如圖1所示，作為本實施形態之被加工物之一例的晶圓1係例如圓板狀的矽基板。在晶圓1的表面2a係形成有元件區域5及外周剩餘區域6。在元件區域5中，係在藉由格子狀的分割預定線3所區劃的區域的各個形成有元件4。外周剩餘區域6係包圍元件區域5。As shown in FIG. 1, a wafer 1 as an example of a workpiece to be processed in this embodiment is, for example, a disc-shaped silicon substrate. On the surface 2 a of the wafer 1, the element region 5 and the remaining peripheral region 6 are formed. In the element region 5, the element 4 is formed in each of the regions divided by the grid-shaped dividing line 3. The remaining peripheral area 6 surrounds the element area 5.

如圖2所示，在晶圓1的表面2a係形成有因元件4所致之凹凸。因此，晶圓1的表面2a係形成為凹凸面。此外，晶圓1的背面2b並未具有元件4，形成為藉由研削砥石等所被研削的被研削面。As shown in FIG. 2, the surface 2 a of the wafer 1 has irregularities due to the element 4. Therefore, the surface 2a of the wafer 1 is formed as an uneven surface. In addition, the back surface 2b of the wafer 1 does not have the element 4 and is formed as a ground surface ground by grinding whetstones or the like.

在本實施形態之被加工物的加工方法(本加工方法)中，藉由樹脂被覆如上所示之晶圓1的表面2a，來研削背面2b。以下說明本加工方法所包含的步驟。In the processing method of the object to be processed (this processing method) of this embodiment, the front surface 2a of the wafer 1 as shown above is coated with resin to grind the back surface 2b. The steps included in this processing method are described below.

(1)保持步驟及樹脂被覆步驟 在本加工方法中的保持步驟及樹脂被覆步驟中，係使用如圖3所示之被覆裝置11。被覆裝置11係保持晶圓1，且藉由旋塗，藉由樹脂來被覆晶圓1的表面2a。(1) Holding step and resin coating step In the holding step and resin coating step in this processing method, the coating device 11 shown in FIG. 3 is used. The coating device 11 holds the wafer 1 and coats the surface 2a of the wafer 1 with resin by spin coating.

如圖3所示，被覆裝置11係具備：保持晶圓1而使其旋轉的保持部13、及對晶圓1供給樹脂的樹脂供給部15。As shown in FIG. 3, the coating device 11 includes a holding portion 13 that holds and rotates the wafer 1, and a resin supply portion 15 that supplies resin to the wafer 1.

保持部13係具備：吸附保持晶圓1的第1保持平台20、成為第1保持平台20的旋轉軸的心軸22、及支持該等的基台24。第1保持平台20係在其表面的中央部具有第1保持面21。第1保持面21係由多孔陶瓷等多孔質材料所成，形成為圓板狀。第1保持面21係連接於未圖示的吸引源。The holding unit 13 includes a first holding platform 20 that suction-holds the wafer 1, a mandrel 22 that serves as a rotation axis of the first holding platform 20, and a base 24 that supports these. The first holding platform 20 has a first holding surface 21 at the center of its surface. The first holding surface 21 is made of a porous material such as porous ceramics, and is formed in a disk shape. The first holding surface 21 is connected to a suction source (not shown).

樹脂供給部15係具備：具備有樹脂供給口31a的L字型的樹脂供給噴嘴31、及可旋轉地支持樹脂供給噴嘴31的支持台33。The resin supply unit 15 includes an L-shaped resin supply nozzle 31 provided with a resin supply port 31 a, and a support table 33 that rotatably supports the resin supply nozzle 31.

在保持步驟中，係如圖3所示，晶圓1被載置在第1保持平台20的第1保持面21上。之後，藉由來自未圖示的吸引源的吸引力，在第1保持面21產生負壓。第1保持面21係藉由該負壓，吸引保持晶圓1的背面2b。藉此，晶圓1的表面2a朝上露出。In the holding step, as shown in FIG. 3, the wafer 1 is placed on the first holding surface 21 of the first holding platform 20. After that, a negative pressure is generated on the first holding surface 21 by suction from an unshown suction source. The first holding surface 21 attracts and holds the back surface 2b of the wafer 1 by this negative pressure. Thereby, the surface 2a of the wafer 1 is exposed upward.

保持步驟之後，實施樹脂被覆步驟。在樹脂被覆步驟中，如圖4所示，樹脂供給噴嘴31的樹脂供給口31a被定位在第1保持平台20的上方。接著，一邊使第1保持平台20以例如箭號A方向旋轉，一邊由樹脂供給噴嘴31的樹脂供給口31a，對晶圓1的表面2a的中央供給預定量的液狀樹脂R。被滴下至晶圓1的表面2a的液狀樹脂R係藉由因第1保持平台20的旋轉所發生的離心力，由表面2a的中央流至外周側，遍及表面2a的全面。 其中，液狀樹脂R係因受到紫外線的照射而硬化的紫外線硬化樹脂，以適於旋塗的樹脂為佳。After the holding step, the resin coating step is performed. In the resin coating step, as shown in FIG. 4, the resin supply port 31 a of the resin supply nozzle 31 is positioned above the first holding platform 20. Next, a predetermined amount of liquid resin R is supplied to the center of the surface 2 a of the wafer 1 through the resin supply port 31 a of the resin supply nozzle 31 while rotating the first holding platform 20 in the direction of arrow A, for example. The liquid resin R dropped onto the surface 2a of the wafer 1 flows from the center of the surface 2a to the outer periphery side by the centrifugal force generated by the rotation of the first holding platform 20, covering the entire surface 2a. Among them, the liquid resin R is an ultraviolet curing resin that is cured by irradiation with ultraviolet rays, and a resin suitable for spin coating is preferred.

(2)紫外線照射步驟 樹脂被覆步驟之後，實施紫外線照射步驟。在紫外線照射步驟中，首先，將晶圓1的表面2a上的液狀樹脂R形成為低溫狀態。因此，在本加工方法中，將晶圓1曝曬在低溫的氣體環境。例如，將晶圓1由被覆裝置11卸下，而設置在未圖示的低溫的氣體環境的紫外線照射室或紫外線照射用腔室。(2) UV irradiation steps After the resin coating step, the ultraviolet irradiation step is performed. In the ultraviolet irradiation step, first, the liquid resin R on the surface 2a of the wafer 1 is formed into a low-temperature state. Therefore, in this processing method, the wafer 1 is exposed to a low-temperature gas environment. For example, the wafer 1 is detached from the coating device 11 and provided in an ultraviolet irradiation chamber or an ultraviolet irradiation chamber in a low-temperature gas environment (not shown).

接著，晶圓1的表面2a上的液狀樹脂R的溫度下降至預定值之後，藉由未圖示的紫外線照射裝置，對表面2a上的液狀樹脂R照射紫外光。藉此，液狀樹脂R硬化，如圖5所示，在晶圓1的表面2a形成樹脂層10。Next, after the temperature of the liquid resin R on the surface 2a of the wafer 1 drops to a predetermined value, the liquid resin R on the surface 2a is irradiated with ultraviolet light by an ultraviolet irradiation device (not shown). As a result, the liquid resin R is cured, and as shown in FIG. 5, the resin layer 10 is formed on the surface 2 a of the wafer 1.

其中，在該步驟中，液狀樹脂R若在比接下來實施的背面研削步驟的環境溫度更為低溫狀態下硬化即可。However, in this step, the liquid resin R may be cured at a lower temperature than the ambient temperature of the back grinding step to be performed next.

(3)背面研削步驟 實施紫外線照射步驟之後，實施背面研削步驟。在背面研削步驟中，係使用圖6所示之研削裝置150。研削裝置150係具備：保持晶圓1的第2保持平台151、具有鉛直方向的軸心的心軸152、被安裝在心軸152的下端的架座154、及被安裝在架座154的下面的研削輪156。(3) Back grinding step After the ultraviolet irradiation step is performed, the back grinding step is performed. In the back grinding step, the grinding device 150 shown in FIG. 6 is used. The grinding device 150 includes a second holding stage 151 that holds the wafer 1, a mandrel 152 having an axis in the vertical direction, a mount 154 attached to the lower end of the mandrel 152, and a mount 154 attached below the mount 154 Grinding wheel 156.

第2保持平台151係在其表面的中央部具有第2保持面151a。第2保持面151a係由多孔陶瓷等多孔質材料所成，形成為圓板狀。第2保持面151a係連接於未圖示的吸引源。The second holding platform 151 has a second holding surface 151a at the center of its surface. The second holding surface 151a is made of a porous material such as porous ceramics, and is formed in a disc shape. The second holding surface 151a is connected to a suction source (not shown).

研削輪156係具備：被安裝在架座154的基台158、及被固接在基台158的複數研削砥石160。複數研削砥石160係以環狀排列的方式被固接在研削輪156的下部的外周緣。The grinding wheel 156 series includes a base 158 mounted on the base 154 and a plurality of grinding stones 160 fixed on the base 158. The plural grinding whetstones 160 are fixed to the outer peripheral edge of the lower portion of the grinding wheel 156 in a ring arrangement.

在背面研削步驟中，首先，包含樹脂層10的晶圓1被曝曬在實施背面研削步驟的氣體環境。藉此，晶圓1的溫度被形成為該氣體環境的溫度，亦即背面研削步驟的環境溫度。接著，如圖6所示，晶圓1被載置於第2保持平台151的第2保持面151a上。之後，藉由來自未圖示之吸引源的吸引力，在第2保持面151a產生負壓。第2保持面151a係藉由該負壓，吸引保持形成在晶圓1的表面2a的樹脂層10。藉此，晶圓1的背面2b朝上露出。In the back grinding process, first, the wafer 1 including the resin layer 10 is exposed to the gas environment in which the back grinding process is performed. Thereby, the temperature of the wafer 1 is formed as the temperature of the gas environment, that is, the environment temperature of the back grinding step. Next, as shown in FIG. 6, the wafer 1 is placed on the second holding surface 151 a of the second holding platform 151. After that, a negative pressure is generated on the second holding surface 151a by suction from an unshown suction source. The second holding surface 151a attracts and holds the resin layer 10 formed on the surface 2a of the wafer 1 by the negative pressure. As a result, the back surface 2b of the wafer 1 is exposed upward.

接著，第2保持平台151以例如箭號B方向旋轉。此外，研削輪156一邊以箭號B方向旋轉一邊降下。接著，研削砥石160將晶圓1的背面2b一邊按壓一邊研削。在該研削中，係切削晶圓1的背面2b至晶圓1成為所希望的厚度為止。Next, the second holding platform 151 rotates in the direction of arrow B, for example. In addition, the grinding wheel 156 is lowered while rotating in the arrow B direction. Next, the grindstone 160 grinds the back surface 2b of the wafer 1 while pressing. In this grinding, the back surface 2b of the wafer 1 is cut until the wafer 1 has a desired thickness.

在此，說明本加工方法的作用及效果。 在紫外線照射步驟之後，如圖7所示，在形成在晶圓1的表面2a的樹脂層10，產生如箭號C所示之徑方向朝內的收縮力。該收縮力係起因於液狀樹脂R具有因照射紫外線而硬化時作收縮的性質。Here, the function and effect of this processing method will be described. After the ultraviolet irradiation step, as shown in FIG. 7, in the resin layer 10 formed on the surface 2 a of the wafer 1, a shrinkage force inward in the radial direction as indicated by arrow C is generated. The shrinkage force is due to the property that the liquid resin R shrinks when cured by irradiation with ultraviolet rays.

因此，以往，在之後的背面研削步驟中，晶圓1的背面2b被切削，若晶圓1被薄化，有該收縮力超過樹脂層10及晶圓1的剛性的情形。此時，如圖8所示，在晶圓1產生翹曲。Therefore, in the past, in the subsequent back grinding step, the back surface 2b of the wafer 1 is cut, and if the wafer 1 is thinned, the shrinkage force may exceed the rigidity of the resin layer 10 and the wafer 1. At this time, as shown in FIG. 8, the wafer 1 is warped.

關於此，在本加工方法中，係在紫外線照射步驟中，在將晶圓1的表面2a上的液狀樹脂R的溫度，形成為比背面研削步驟的環境溫度更為低溫的狀態下，使液狀樹脂R硬化而形成樹脂層10。在之後的背面研削步驟中，提高樹脂層10的溫度之後，研削晶圓1的背面2b。In this regard, in this processing method, in the ultraviolet irradiation step, the temperature of the liquid resin R on the surface 2a of the wafer 1 is formed at a temperature lower than the ambient temperature in the back grinding step. The liquid resin R is hardened to form the resin layer 10. In the subsequent back surface grinding step, after raising the temperature of the resin layer 10, the back surface 2b of the wafer 1 is ground.

在本加工方法中，亦在紫外線照射步驟之後，在樹脂層10產生圖9中以箭號C所示之徑方向朝內的收縮力。但是，在本加工方法中，至背面研削步驟開始時，樹脂層10由紫外線照射步驟中相對較低的溫度，被升溫至背面研削步驟的環境溫度。結果，在樹脂層10產生圖9中以箭號D所示之徑方向朝外的膨脹力。 該膨脹力係起因於液狀樹脂R除了因照射紫外線而硬化時作收縮的性質之外，具有伴隨硬化後的溫度上升而熱膨脹的性質。In this processing method, also after the ultraviolet ray irradiation step, a shrinkage force inward in the radial direction indicated by arrow C in FIG. 9 is generated in the resin layer 10. However, in this processing method, the resin layer 10 is heated to the ambient temperature of the back surface grinding step from the relatively low temperature in the ultraviolet irradiation step until the back surface grinding step is started. As a result, the resin layer 10 generates an expansion force outward in the radial direction indicated by arrow D in FIG. 9. This expansion force is due to the fact that the liquid resin R shrinks when cured by irradiation with ultraviolet rays, and has the property of thermal expansion as the temperature after curing rises.

因此，在本加工方法中，樹脂層10中的收縮力(箭號C)與膨脹力(箭號D)被相抵。因此，在之後的背面研削步驟，晶圓1的背面2b被切削，即使晶圓1被薄化，亦如圖10所示，抑制晶圓1因樹脂層10而被拉伸的情形，因此可抑制晶圓1發生翹曲。Therefore, in this processing method, the contraction force (arrow C) and the expansion force (arrow D) in the resin layer 10 are offset. Therefore, in the subsequent back surface grinding step, the back surface 2b of the wafer 1 is cut, and even if the wafer 1 is thinned, as shown in FIG. 10, the situation in which the wafer 1 is stretched by the resin layer 10 is suppressed, so it is possible Wafer 1 is suppressed from warping.

以下顯示用以確認本加工方法之效果的實驗結果。 首先，藉由液狀樹脂R被覆晶圓1的表面2a，以常溫使該液狀樹脂R硬化，形成厚度為50μm的樹脂層10。之後，藉由將晶圓1的背面2b研削至晶圓1成為所希望的厚度，來作成比較例。The following shows the experimental results to confirm the effect of this processing method. First, the surface 2a of the wafer 1 is covered with a liquid resin R, and the liquid resin R is cured at normal temperature to form a resin layer 10 having a thickness of 50 μm. Thereafter, a comparative example is prepared by grinding the back surface 2b of the wafer 1 to a desired thickness of the wafer 1.

此外，同樣地藉由液狀樹脂R被覆晶圓1的表面2a，在使該液狀樹脂R降低至冰水溫度的狀態下使其硬化，而形成厚度為50μm的樹脂層10。之後，在將樹脂層10恢復成常溫之後，將晶圓1的背面2b，研削至晶圓1成為所希望的厚度，藉此作成實施例。In addition, similarly, the surface 2a of the wafer 1 is covered with the liquid resin R, and the liquid resin R is hardened in a state where the temperature of the ice water is lowered to form a resin layer 10 having a thickness of 50 μm. Thereafter, after the resin layer 10 is returned to normal temperature, the back surface 2b of the wafer 1 is ground to a desired thickness of the wafer 1 to prepare an embodiment.

接著，測定如圖11所示之背面2b研削後的晶圓1的左端部的翹曲量(左翹曲量)d1、及右端部的翹曲量(右翹曲量)d2。 在常溫下使液狀樹脂R硬化的比較例中，左翹曲量d1及右翹曲量d2分別為38μm及40μm。另一方面，在以冰水溫度使液狀樹脂R硬化的實施例中，左翹曲量d1及右翹曲量d2分別被改善為30μm及38μm。Next, the warpage amount (left warpage amount) d1 of the left end portion of the wafer 1 after grinding the back surface 2 b shown in FIG. 11 and the warpage amount (right warpage amount) d2 of the right end portion are measured. In the comparative example where the liquid resin R is hardened at normal temperature, the left warpage amount d1 and the right warpage amount d2 are 38 μm and 40 μm, respectively. On the other hand, in the embodiment where the liquid resin R is cured at the ice water temperature, the left warpage amount d1 and the right warpage amount d2 are improved to 30 μm and 38 μm, respectively.

其中，在本加工方法中，在該樹脂被覆步驟中，藉由旋塗，藉由液狀樹脂R被覆晶圓1的表面2a。藉此，可輕易實施藉由液狀樹脂R所為之表面2a的被覆。但是，藉由液狀樹脂R被覆表面2a的方法亦可為其他任何方法。In the present processing method, in the resin coating step, the surface 2a of the wafer 1 is coated with the liquid resin R by spin coating. With this, the surface 2a covered by the liquid resin R can be easily coated. However, the method of coating the surface 2a with the liquid resin R may be any other method.

此外，在本實施形態中，在紫外線照射步驟中，藉由將晶圓1曝曬在低溫的氣體環境，降低該表面2a上的液狀樹脂R的溫度。但是，降低表面2a上的液狀樹脂R的溫度的方法並非侷限於此，亦可為任何方法。例如，亦可藉由低溫的吸盤平台保持晶圓1，藉此降低表面2a上的液狀樹脂R的溫度。In this embodiment, in the ultraviolet irradiation step, the temperature of the liquid resin R on the surface 2a is lowered by exposing the wafer 1 to a low-temperature gas environment. However, the method of lowering the temperature of the liquid resin R on the surface 2a is not limited to this, and may be any method. For example, the temperature of the liquid resin R on the surface 2a may be lowered by holding the wafer 1 by a low-temperature chuck table.

此外，亦可按照所預測的晶圓1的翹曲量，來決定紫外線照射步驟時的液狀樹脂R的溫度。例如，若翹曲量被預想為相對較大，亦可使紫外線照射步驟時的液狀樹脂R的溫度相對較低，而加大樹脂層10的熱膨脹力。另一方面，若翹曲量被預想為相對較小，亦可使紫外線照射步驟時的液狀樹脂R的溫度相對較高，而減小樹脂層10的熱膨脹力。如上所示，在本實施形態中，亦可按照晶圓1的翹曲的量(翹曲的強度)，來調整紫外線照射步驟時的液狀樹脂R的溫度。In addition, the temperature of the liquid resin R during the ultraviolet irradiation step may be determined according to the predicted warpage amount of the wafer 1. For example, if the amount of warpage is expected to be relatively large, the temperature of the liquid resin R during the ultraviolet irradiation step may be relatively low, and the thermal expansion force of the resin layer 10 may be increased. On the other hand, if the amount of warpage is expected to be relatively small, the temperature of the liquid resin R during the ultraviolet irradiation step may be relatively high, and the thermal expansion force of the resin layer 10 may be reduced. As described above, in the present embodiment, the temperature of the liquid resin R during the ultraviolet irradiation step may be adjusted according to the amount of warpage (strength of warpage) of the wafer 1.

此外，在本實施形態中，藉由圖3所示之被覆裝置11，實施保持步驟、及樹脂被覆步驟。亦可取而代之，藉由被覆裝置11，來實施保持步驟、樹脂被覆步驟、及紫外線照射步驟。此亦可藉由例如在被覆裝置11具備用以將晶圓1冷卻的冷卻裝置、及用以對晶圓1照射紫外線的紫外線照射裝置來實現。冷卻裝置亦可為例如將保持晶圓1的第1保持平台20形成為低溫的裝置。In addition, in this embodiment, the holding step and the resin coating step are performed by the coating device 11 shown in FIG. 3. Alternatively, the coating device 11 may be used to perform the holding step, the resin coating step, and the ultraviolet irradiation step. This can also be achieved, for example, by providing the coating device 11 with a cooling device for cooling the wafer 1 and an ultraviolet irradiation device for irradiating the wafer 1 with ultraviolet rays. The cooling device may be, for example, a device that forms the first holding platform 20 holding the wafer 1 at a low temperature.

此外，在本實施形態中，藉由圖6所示之研削裝置150，實施背面研削步驟。亦可取而代之，藉由研削裝置150，實施紫外線照射步驟、及背面研削步驟。此亦可藉由例如在研削裝置150具備用以將晶圓1冷卻的冷卻裝置、及用以對晶圓1照射紫外線的紫外線照射裝置來實現。In addition, in this embodiment, the back grinding process is performed by the grinding device 150 shown in FIG. 6. Alternatively, the grinding device 150 may perform an ultraviolet irradiation step and a back grinding step. This can also be achieved, for example, by providing the grinding device 150 with a cooling device for cooling the wafer 1 and an ultraviolet irradiation device for irradiating the wafer 1 with ultraviolet rays.

此外，在本實施形態中，為了實施本加工方法，使用被覆裝置11、及研削裝置150。亦可取而代之，例如圖3所示之被覆裝置11兼作研削裝置150。此亦可藉由例如在被覆裝置11具備用以研削晶圓1的背面2b的構成，例如圖6所示之心軸152、架座154、及研削輪156來實現。在該構成中，第1保持平台20係兼作第2保持平台151。In addition, in this embodiment, in order to implement this processing method, the coating device 11 and the grinding device 150 are used. Alternatively, for example, the coating device 11 shown in FIG. 3 doubles as the grinding device 150. This can also be achieved by, for example, a configuration in which the coating device 11 includes a back surface 2 b for grinding the wafer 1, such as the mandrel 152, the holder 154, and the grinding wheel 156 shown in FIG. 6. In this configuration, the first holding platform 20 also serves as the second holding platform 151.

此外，若被覆裝置11兼作研削裝置150，被覆裝置11亦可另外具備：用以將晶圓1冷卻的冷卻裝置、及用以對晶圓1照射紫外線的紫外線照射裝置。藉此，被覆裝置11係可亦實施紫外線照射步驟。因此，可藉由1個被覆裝置11來實施本加工方法的全部步驟。In addition, if the coating device 11 doubles as the grinding device 150, the coating device 11 may additionally include a cooling device for cooling the wafer 1 and an ultraviolet irradiation device for irradiating the wafer 1 with ultraviolet rays. As a result, the covering device 11 can also perform the ultraviolet irradiation step. Therefore, all the steps of this processing method can be implemented by one coating device 11.

1‧‧‧晶圓 2a‧‧‧表面 2b‧‧‧背面 3‧‧‧分割預定線 4‧‧‧元件 5‧‧‧元件區域 6‧‧‧外周剩餘區域 R‧‧‧液狀樹脂 10‧‧‧樹脂層 11‧‧‧被覆裝置 13‧‧‧保持部 15‧‧‧樹脂供給部 20‧‧‧第1保持平台 21‧‧‧第1保持面 22‧‧‧心軸 24‧‧‧基台 31‧‧‧樹脂供給噴嘴 31a‧‧‧樹脂供給口 33‧‧‧支持台 150‧‧‧研削裝置 151‧‧‧第2保持平台 151a‧‧‧第2保持面 152‧‧‧心軸 154‧‧‧架座 156‧‧‧研削輪 158‧‧‧基台 160‧‧‧研削砥石 d1‧‧‧左翹曲量 d2‧‧‧右翹曲量 C、D‧‧‧箭號1‧‧‧ Wafer 2a‧‧‧surface 2b‧‧‧Back 3‧‧‧ scheduled line 4‧‧‧ Components 5‧‧‧Component area 6‧‧‧External peripheral area R‧‧‧liquid resin 10‧‧‧Resin layer 11‧‧‧covered device 13‧‧‧Maintaining Department 15‧‧‧Resin Supply Department 20‧‧‧The first holding platform 21‧‧‧ 1st holding surface 22‧‧‧mandrel 24‧‧‧Abutment 31‧‧‧Resin supply nozzle 31a‧‧‧Resin supply port 33‧‧‧Support Desk 150‧‧‧ Grinding device 151‧‧‧Second holding platform 151a‧‧‧Second holding surface 152‧‧‧mandrel 154‧‧‧Bracket 156‧‧‧ Grinding wheel 158‧‧‧Abutment 160‧‧‧ Grinding Whetstone d1‧‧‧Left warpage d2‧‧‧Right warpage C, D‧‧‧Arrow

圖1係顯示作為本實施形態之被加工物之一例的晶圓的斜視圖。 圖2係圖1所示之晶圓的剖面圖。 圖3係顯示在保持步驟及樹脂被覆步驟中所使用的被覆裝置的說明圖。 圖4係顯示樹脂被覆步驟的實施態樣的斜視圖。 圖5係顯示具備樹脂層的晶圓的剖面圖。 圖6係背面研削步驟中的研削裝置及晶圓的剖面圖。 圖7係顯示在晶圓上的樹脂層所產生的收縮力的說明圖。 圖8係顯示被樹脂層拉伸而產生翹曲的晶圓的說明圖。 圖9係顯示在晶圓上的樹脂層所產生的收縮力及膨脹力的說明圖。 圖10係顯示圖9所示之晶圓的背面研削後的狀態的說明圖。 圖11係顯示在晶圓所產生的翹曲量的說明圖。FIG. 1 is a perspective view showing a wafer as an example of a workpiece to be processed in this embodiment. FIG. 2 is a cross-sectional view of the wafer shown in FIG. 1. FIG. 3 is an explanatory diagram showing a coating device used in the holding step and the resin coating step. Fig. 4 is a perspective view showing an embodiment of the resin coating step. 5 is a cross-sectional view showing a wafer provided with a resin layer. 6 is a cross-sectional view of the grinding device and the wafer in the back grinding step. 7 is an explanatory diagram showing the shrinkage force generated by the resin layer on the wafer. FIG. 8 is an explanatory diagram showing a wafer that is stretched by a resin layer and warped. FIG. 9 is an explanatory diagram showing shrinkage force and expansion force generated by the resin layer on the wafer. FIG. 10 is an explanatory diagram showing a state after grinding the back surface of the wafer shown in FIG. 9. FIG. 11 is an explanatory diagram showing the amount of warpage generated on the wafer.

1‧‧‧晶圓 1‧‧‧ Wafer

4‧‧‧元件 4‧‧‧ Components

10‧‧‧樹脂層 10‧‧‧Resin layer

C、D‧‧‧箭號 C, D‧‧‧Arrow

Claims (2)

一種被加工物的加工方法，其係將藉由形成為格子狀的複數分割預定線被區劃且在表面形成有元件的被加工物的背面，研削至所希望的厚度的被加工物的加工方法，其特徵為： 具備： 保持步驟，其係以使形成有該元件的該表面側露出的方式，藉由第1保持平台的第1保持面，吸附保持該被加工物； 樹脂被覆步驟，其係對該被加工物的該表面，供給因受到紫外線的照射而硬化的液狀樹脂，以該樹脂被覆該被加工物的該表面； 紫外線照射步驟，其係使在該樹脂被覆步驟中被覆該被加工物的該表面的該樹脂，在比背面研削步驟的環境溫度更為低溫的狀態下硬化而形成樹脂層；及 背面研削步驟，其係在實施該紫外線照射步驟後，藉由第2保持平台的第2保持面，吸附保持該被加工物的該表面，實施該被加工物的該背面的研削， 在比該背面研削步驟的環境溫度更為低溫的狀態下使該樹脂硬化，藉此可減低該被加工物的翹曲。A processing method of a workpiece, which is a method of processing a workpiece to be ground to a desired thickness by dividing the back of the workpiece to be divided by a plurality of predetermined dividing lines formed in a lattice shape and having elements formed on the surface , Characterized by: have: The holding step is to adsorb and hold the workpiece by the first holding surface of the first holding platform in such a way that the surface side on which the element is formed is exposed; In the resin coating step, the surface of the workpiece is supplied with a liquid resin hardened by irradiation with ultraviolet rays, and the surface of the workpiece is coated with the resin; The ultraviolet irradiation step, which causes the resin covering the surface of the workpiece in the resin coating step to harden at a lower temperature than the ambient temperature of the back grinding step to form a resin layer; and The back surface grinding step is to carry out the grinding of the back surface of the processed object through the second holding surface of the second holding platform after the ultraviolet irradiation step is performed, to adsorb and hold the surface of the processed object, Curing the resin in a state of lower temperature than the ambient temperature of the back grinding step can reduce the warpage of the workpiece. 如申請專利範圍第1項之被加工物的加工方法，其中，該樹脂被覆步驟係包含：藉由旋塗，藉由該樹脂來被覆該被加工物的該表面。 A processing method of a workpiece as claimed in item 1 of the patent application, wherein the resin coating step includes: coating the surface of the workpiece with the resin by spin coating.
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