JP2020027898A - Processing method of work piece - Google Patents

Processing method of work piece Download PDF

Info

Publication number
JP2020027898A
JP2020027898A JP2018152658A JP2018152658A JP2020027898A JP 2020027898 A JP2020027898 A JP 2020027898A JP 2018152658 A JP2018152658 A JP 2018152658A JP 2018152658 A JP2018152658 A JP 2018152658A JP 2020027898 A JP2020027898 A JP 2020027898A
Authority
JP
Japan
Prior art keywords
wafer
resin
workpiece
holding
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018152658A
Other languages
Japanese (ja)
Other versions
JP7115932B2 (en
Inventor
淳 小松
Atsushi Komatsu
淳 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2018152658A priority Critical patent/JP7115932B2/en
Priority to CN201910660721.8A priority patent/CN110828306B/en
Priority to TW108128709A priority patent/TWI807084B/en
Priority to KR1020190098847A priority patent/KR102638139B1/en
Publication of JP2020027898A publication Critical patent/JP2020027898A/en
Application granted granted Critical
Publication of JP7115932B2 publication Critical patent/JP7115932B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Abstract

To suppress the generation of a warping of a work piece.SOLUTION: In an ultraviolet irradiation step, a liquid resin is hardened to form a resin layer 10 in a state of setting a temperature lower than an environment temperature in a back surface grinding step. In the back surface grinding step, a wafer 1 is ground after the increase of the temperature of the resin layer 10. In this processing method, in addition to a contractive force (arrow C) directing to a radial inner direction, an expansion force (arrow D) directing to a radial outer direction caused by a heat expansion of the resin layer 10 occurs in the resin layer 10, and they are cancelled. Therefore, even if the wafer 1 is ground and thinned, since a tension of the wafer 1 due to the resin layer 10 is suppressed, the occurrence of the warping of the wafer 1 can be suppressed.SELECTED DRAWING: Figure 10

Description

本発明は、被加工物の加工方法に関する。   The present invention relates to a method for processing a workpiece.

半導体デバイスの製造工程においては、被加工物の表面に、格子状のストリートが形成される。そして、ストリートによって区画された領域に、ＩＣあるいはＬＳＩ等のデバイスが形成される。これらの被加工物は、裏面が研削されて所定の厚みへと薄化される。その後、切削装置等によって、被加工物がストリートに沿って分割されることで、個々の半導体デバイスチップが製造される。   In a semiconductor device manufacturing process, lattice-shaped streets are formed on the surface of a workpiece. Then, a device such as an IC or an LSI is formed in an area defined by the street. The back surface of these workpieces is ground and thinned to a predetermined thickness. Thereafter, the workpiece is divided along the streets by a cutting device or the like, whereby individual semiconductor device chips are manufactured.

被加工物を薄化するために、その裏面を研削する際、被加工物の表面に形成されたデバイスを保護することが必要である。このために、紫外線の照射を受けることにより硬化する液状の紫外線硬化樹脂によって、被加工物の表面を被覆する手法がある（特許文献１参照）。   When the back surface is ground in order to make the work thin, it is necessary to protect devices formed on the front surface of the work. For this purpose, there is a method of coating the surface of a workpiece with a liquid ultraviolet curable resin that is cured by being irradiated with ultraviolet rays (see Patent Document 1).

特開２００９−０４３９３１JP 2009-043931

しかし、紫外線硬化樹脂は、紫外線の照射を受けることにより硬化する際に収縮してしまう。そのため、裏面研削後、収縮する紫外線硬化樹脂に被加工物が引っ張られることで、被加工物に反りが発生することがある。被加工物の反りは、その後の工程において、搬送不良および被加工物の割れなどのトラブルを招く可能性がある。   However, the ultraviolet curable resin contracts when cured by being irradiated with ultraviolet light. Therefore, the workpiece may be warped by being pulled by the shrinking ultraviolet curable resin after the back surface grinding. The warpage of the workpiece may cause troubles such as poor conveyance and cracking of the workpiece in a subsequent process.

本発明の被加工物の加工方法（本加工方法）は、格子状に形成された複数の分割予定ラインによって区画され表面にデバイスが形成された被加工物の裏面を、所望の厚さまで研削する被加工物の加工方法であって、該デバイスが形成された該表面側を露出させるように、第１保持テーブルの第１保持面によって該被加工物を吸着保持する保持ステップと、該被加工物の該表面に、紫外線の照射を受けることにより硬化する液状樹脂を供給し、該被加工物の該表面を該樹脂で被覆する樹脂被覆ステップと、該樹脂被覆ステップにて該被加工物の該表面を被覆した該樹脂を、裏面研削ステップの環境温度よりも低温の状態で硬化させて樹脂層を形成する紫外線照射ステップと、該紫外線照射ステップの実施後、該被加工物の該表面を第２保持テーブルの第２保持面によって吸着保持し、該被加工物の該裏面の研削を実施する裏面研削ステップと、を備え該裏面研削ステップの環境温度よりも低温の状態で該樹脂を硬化させることにより、該被加工物の反りを低減可能とすることを特徴とする。   In the method for processing a workpiece according to the present invention (this processing method), the back surface of the workpiece having a device formed on a surface thereof, which is defined by a plurality of planned dividing lines formed in a lattice shape, is ground to a desired thickness. A method of processing a workpiece, wherein a holding step of sucking and holding the workpiece by a first holding surface of a first holding table so as to expose the surface side on which the device is formed; A resin coating step of supplying a liquid resin that is cured by being irradiated with ultraviolet rays to the surface of the object, and coating the surface of the object with the resin; and Curing the resin coated on the surface at a temperature lower than the environmental temperature of the back surface grinding step to form a resin layer, and after performing the ultraviolet irradiation step, the surface of the workpiece is Second holding table A back-grinding step of performing suction-holding by the second holding surface of the tool and grinding the back surface of the workpiece, and curing the resin at a temperature lower than the environmental temperature of the back-surface grinding step. , Characterized in that the warp of the workpiece can be reduced.

本加工方法では、該樹脂被覆ステップは、スピンコートにより、該被加工物の該表面を該樹脂によって被覆することを含んでもよい。   In the present processing method, the resin coating step may include coating the surface of the workpiece with the resin by spin coating.

本加工方法では、紫外線照射ステップにおいて、被加工物における表面上の液状樹脂の温度を、裏面研削ステップの環境温度よりも低温にした状態で、液状樹脂を硬化させて樹脂層を形成している。その後の裏面研削ステップでは、樹脂層の温度を高めてから、被加工物の裏面を研削している。   In the present processing method, in the ultraviolet irradiation step, the temperature of the liquid resin on the surface of the workpiece is set lower than the environmental temperature of the back surface grinding step, and the liquid resin is cured to form a resin layer. . In the subsequent back surface grinding step, the back surface of the workpiece is ground after raising the temperature of the resin layer.

本加工方法でも、紫外線照射ステップの後、樹脂層に、径方向内向きの収縮力が生じる。これは、液状樹脂が、硬化する際に収縮する性質を有していることに起因する。さらに、本加工方法では、裏面研削ステップの開始時までに、樹脂層が、紫外線照射ステップでの比較的に低い温度から、裏面研削ステップの環境温度にまで昇温される。その結果、樹脂層に、径方向外向きの膨張力が生じる。この膨張力は、液状樹脂が、硬化後の温度上昇に伴って熱膨張する性質も有していることに起因する。   Also in this processing method, a radially inward contraction force is generated in the resin layer after the ultraviolet irradiation step. This is due to the fact that the liquid resin has a property of shrinking when cured. Further, in the present processing method, the temperature of the resin layer is raised from the relatively low temperature in the ultraviolet irradiation step to the ambient temperature in the back grinding step by the time the back grinding step is started. As a result, a radially outward expansion force is generated in the resin layer. This expansion force is due to the fact that the liquid resin also has a property of thermally expanding with an increase in temperature after curing.

このため、本加工方法では、樹脂層において、収縮力と膨張力とが相殺される。したがって、後の裏面研削ステップにおいて被加工物の裏面が削られて、被加工物が薄化されても、樹脂層によって被加工物が引っ張られることが抑制されるため、被加工物の反りの発生を抑えることが可能となる。   Therefore, in the present processing method, the contraction force and the expansion force are offset in the resin layer. Therefore, even if the back surface of the workpiece is shaved in the subsequent back surface grinding step and the workpiece is thinned, the workpiece is prevented from being pulled by the resin layer, so that the warpage of the workpiece is suppressed. Generation can be suppressed.

また、本加工方法の該樹脂被覆ステップは、スピンコートにより、該被加工物の該表面を該樹脂によって被覆することを含んでもよい。これにより、液状樹脂による被覆を容易に実施することができる。   Further, the resin coating step of the present processing method may include coating the surface of the workpiece with the resin by spin coating. Thereby, coating with the liquid resin can be easily performed.

本実施形態にかかる被加工物の一例であるウェーハを示す斜視図である。FIG. 2 is a perspective view illustrating a wafer as an example of a workpiece according to the present embodiment. 図１に示したウェーハの断面図である。It is sectional drawing of the wafer shown in FIG. 保持ステップおよび樹脂被覆ステップにおいて用いられる被覆装置を示す説明図である。It is explanatory drawing which shows the coating device used in a holding step and a resin coating step. 樹脂被覆ステップの実施態様を示す斜視図である。It is a perspective view which shows embodiment of a resin coating step. 樹脂層を備えたウェーハを示す断面図である。It is sectional drawing which shows the wafer provided with the resin layer. 裏面研削ステップにおける研削装置およびウェーハの断面図である。It is sectional drawing of a grinding apparatus and a wafer in a back surface grinding step. ウェーハ上の樹脂層に生じる収縮力を示す説明図である。FIG. 4 is an explanatory view showing a contraction force generated in a resin layer on a wafer. 樹脂層によって引っ張られて反りが生じたウェーハを示す説明図である。FIG. 4 is an explanatory view showing a wafer that has been warped by being pulled by a resin layer. ウェーハ上の樹脂層に生じる収縮力および膨張力を示す説明図である。It is explanatory drawing which shows the contraction force and expansion force which generate | occur | produce in the resin layer on a wafer. 図９に示したウェーハの裏面研削後の状態を示す説明図である。FIG. 10 is an explanatory diagram illustrating a state after grinding the back surface of the wafer illustrated in FIG. 9. ウェーハに生じる反り量を示す説明図である。FIG. 3 is an explanatory diagram showing the amount of warpage generated in a wafer.

図１に示すように、本実施形態にかかる被加工物の一例であるウェーハ１は、たとえば、円板状のシリコン基板である。ウェーハ１の表面２ａには、デバイス領域５および外周余剰領域６が形成されている。デバイス領域５では、格子状の分割予定ライン３によって区画された領域のそれぞれに、デバイス４が形成されている。外周余剰領域６は、デバイス領域５を取り囲んでいる。   As shown in FIG. 1, a wafer 1, which is an example of a workpiece according to the present embodiment, is, for example, a disk-shaped silicon substrate. On the surface 2a of the wafer 1, a device region 5 and an outer peripheral surplus region 6 are formed. In the device region 5, devices 4 are formed in each of the regions partitioned by the grid-shaped scheduled dividing lines 3. The outer peripheral surplus area 6 surrounds the device area 5.

図２に示すように、ウェーハ１の表面２ａには、デバイス４による凹凸が形成されている。このため、ウェーハ１の表面２ａは、凹凸面となっている。また、ウェーハ１の裏面２ｂは、デバイス４を有しておらず、研削砥石などによって研削される被研削面となっている。   As shown in FIG. 2, irregularities due to the devices 4 are formed on the surface 2 a of the wafer 1. For this reason, the surface 2a of the wafer 1 is an uneven surface. Also, the back surface 2b of the wafer 1 does not have the device 4, and is a surface to be ground by a grinding wheel or the like.

本実施形態にかかる被加工物の加工方法（本加工方法）では、このようなウェーハ１の表面２ａを樹脂によって被覆し、裏面２ｂを研削する。以下に、本加工方法に含まれるステップについて説明する。   In the method of processing a workpiece according to the present embodiment (the main processing method), the front surface 2a of such a wafer 1 is coated with a resin, and the back surface 2b is ground. Hereinafter, steps included in the present processing method will be described.

（１）保持ステップおよび樹脂被覆ステップ
本加工方法における保持ステップおよび樹脂被覆ステップでは、図３に示すような被覆装置１１が用いられる。被覆装置１１は、ウェーハ１を保持し、スピンコートにより、ウェーハ１の表面２ａを樹脂によって被覆する。 (1) Holding Step and Resin Coating Step In the holding step and the resin coating step in the present processing method, a coating apparatus 11 as shown in FIG. 3 is used. The coating apparatus 11 holds the wafer 1 and coats the surface 2a of the wafer 1 with a resin by spin coating.

図３に示すように、被覆装置１１は、ウェーハ１を保持して回転させる保持部１３、および、ウェーハ１に樹脂を供給する樹脂供給部１５を備えている。   As illustrated in FIG. 3, the coating apparatus 11 includes a holding unit 13 that holds and rotates the wafer 1 and a resin supply unit 15 that supplies a resin to the wafer 1.

保持部１３は、ウェーハ１を吸着保持する第１保持テーブル２０、第１保持テーブル２０の回転軸となるスピンドル２２、および、これらを支持する基台２４を備えている。第１保持テーブル２０は、その表面の中央部に、第１保持面２１を有している。第１保持面２１は、ポーラスセラミックス等の多孔質材料からなり、円板状に形成されている。第１保持面２１は、図示しない吸引源に接続されている。   The holding unit 13 includes a first holding table 20 that holds the wafer 1 by suction, a spindle 22 that serves as a rotation axis of the first holding table 20, and a base 24 that supports these. The first holding table 20 has a first holding surface 21 at the center of the surface. The first holding surface 21 is made of a porous material such as porous ceramics, and is formed in a disk shape. The first holding surface 21 is connected to a suction source (not shown).

樹脂供給部１５は、樹脂供給口３１ａを備えたＬ字型の樹脂供給ノズル３１、および、樹脂供給ノズル３１を回転可能に支持する支持台３３を備えている。   The resin supply unit 15 includes an L-shaped resin supply nozzle 31 having a resin supply port 31a, and a support base 33 that rotatably supports the resin supply nozzle 31.

保持ステップでは、図３に示すように、ウェーハ１が、第１保持テーブル２０の第１保持面２１上に載置される。その後、図示しない吸引源からの吸引力により、第１保持面２１に負圧が生じる。第１保持面２１は、この負圧によって、ウェーハ１の裏面２ｂを吸引保持する。これにより、ウェーハ１の表面２ａが、上向きに露出する。   In the holding step, the wafer 1 is mounted on the first holding surface 21 of the first holding table 20, as shown in FIG. Thereafter, a negative pressure is generated on the first holding surface 21 by a suction force from a suction source (not shown). The first holding surface 21 suction-holds the back surface 2b of the wafer 1 by the negative pressure. Thereby, the surface 2a of the wafer 1 is exposed upward.

保持ステップの後、樹脂被覆ステップが実施される。樹脂被覆ステップでは、図４に示すように、第１保持テーブル２０の上方に、樹脂供給ノズル３１の樹脂供給口３１ａが位置づけられる。そして、第１保持テーブル２０を、たとえば矢印Ａ方向に回転させながら、樹脂供給ノズル３１の樹脂供給口３１ａからウェーハ１の表面２ａの中央に、所定量の液状樹脂Ｒを供給する。ウェーハ１の表面２ａに滴下された液状樹脂Ｒは、第１保持テーブル２０の回転によって発生する遠心力によって、表面２ａの中央から外周側へ流れていき、表面２ａの全面にいきわたる。
なお、液状樹脂Ｒは、紫外線の照射を受けることにより硬化する紫外線硬化樹脂であり、スピンコートに適した樹脂であることが好ましい。 After the holding step, a resin coating step is performed. In the resin coating step, the resin supply port 31a of the resin supply nozzle 31 is positioned above the first holding table 20, as shown in FIG. Then, a predetermined amount of the liquid resin R is supplied from the resin supply port 31a of the resin supply nozzle 31 to the center of the front surface 2a of the wafer 1 while rotating the first holding table 20 in the direction of arrow A, for example. The liquid resin R dropped on the surface 2a of the wafer 1 flows from the center of the surface 2a to the outer peripheral side by the centrifugal force generated by the rotation of the first holding table 20, and spreads over the entire surface 2a.
The liquid resin R is an ultraviolet curable resin that is cured by being irradiated with ultraviolet light, and is preferably a resin suitable for spin coating.

（２）紫外線照射ステップ
樹脂被覆ステップの後、紫外線照射ステップが実施される。紫外線照射ステップでは、まず、ウェーハ１における表面２ａ上の液状樹脂Ｒを、低温状態とする。そのために、本加工方法では、ウェーハ１を低温の雰囲気にさらす。たとえば、ウェーハ１を、被覆装置１１から取り外して、図示しない低温の雰囲気の紫外線照射室あるいは紫外線照射用チャンバーに設置する。 (2) UV irradiation step After the resin coating step, a UV irradiation step is performed. In the ultraviolet irradiation step, first, the liquid resin R on the surface 2a of the wafer 1 is set to a low temperature state. Therefore, in this processing method, the wafer 1 is exposed to a low-temperature atmosphere. For example, the wafer 1 is detached from the coating apparatus 11 and placed in an ultraviolet irradiation chamber or an ultraviolet irradiation chamber in a low-temperature atmosphere (not shown).

そして、ウェーハ１における表面２ａ上の液状樹脂Ｒの温度が所定値まで下がった後、図示しない紫外線照射装置により、表面２ａ上の液状樹脂Ｒに紫外光を照射する。これにより、液状樹脂Ｒが硬化して、図５に示すように、ウェーハ１の表面２ａに、樹脂層１０が形成される。   Then, after the temperature of the liquid resin R on the surface 2a of the wafer 1 has dropped to a predetermined value, the liquid resin R on the surface 2a is irradiated with ultraviolet light by an ultraviolet irradiation device (not shown). Thereby, the liquid resin R is cured, and the resin layer 10 is formed on the front surface 2a of the wafer 1 as shown in FIG.

なお、このステップでは、液状樹脂Ｒは、次に実施される裏面研削ステップの環境温度よりも低温状態で硬化されればよい。   In this step, the liquid resin R may be cured at a temperature lower than the environmental temperature of the next back surface grinding step.

（３）裏面研削ステップ
紫外線照射ステップを実施した後、裏面研削ステップが実施される。裏面研削ステップでは、図６に示すような研削装置１５０が用いられる。研削装置１５０は、ウェーハ１を保持する第２保持テーブル１５１、鉛直方向の軸心を有するスピンドル１５２、スピンドル１５２の下端に取り付けられたマウント１５４、および、マウント１５４の下面に取り付けられた研削ホイール１５６を備えている。 (3) Back grinding step After performing the ultraviolet irradiation step, the back grinding step is performed. In the back surface grinding step, a grinding device 150 as shown in FIG. 6 is used. The grinding device 150 includes a second holding table 151 for holding the wafer 1, a spindle 152 having a vertical axis, a mount 154 attached to a lower end of the spindle 152, and a grinding wheel 156 attached to the lower surface of the mount 154. It has.

第２保持テーブル１５１は、その表面の中央部に、第２保持面１５１ａを有している。第２保持面１５１ａは、ポーラスセラミックス等の多孔質材料からなり、円板状に形成されている。第２保持面１５１ａは、図示しない吸引源に接続されている。   The second holding table 151 has a second holding surface 151a at the center of its surface. The second holding surface 151a is made of a porous material such as porous ceramics, and is formed in a disk shape. The second holding surface 151a is connected to a suction source (not shown).

研削ホイール１５６は、マウント１５４に取り付けられる基台１５８、および、基台１５８に固着される複数の研削砥石１６０を備えている。複数の研削砥石１６０は、研削ホイール１５６の下部の外周縁に、環状に並ぶように固着されている。   The grinding wheel 156 includes a base 158 attached to the mount 154, and a plurality of grinding wheels 160 fixed to the base 158. The plurality of grinding wheels 160 are fixed to the outer peripheral edge of the lower portion of the grinding wheel 156 so as to be annularly arranged.

裏面研削ステップでは、まず、樹脂層１０を含むウェーハ１が、裏面研削ステップの実施される雰囲気にさらされる。これにより、ウェーハ１の温度が、この雰囲気の温度、すなわち、裏面研削ステップの環境温度とされる。そして、図６に示すように、ウェーハ１が、第２保持テーブル１５１の第２保持面１５１ａ上に載置される。その後、図示しない吸引源からの吸引力により、第２保持面１５１ａに負圧が生じる。第２保持面１５１ａは、この負圧によって、ウェーハ１の表面２ａに形成された樹脂層１０を吸引保持する。これにより、ウェーハ１の裏面２ｂが、上向きに露出する。   In the back grinding step, first, the wafer 1 including the resin layer 10 is exposed to an atmosphere in which the back grinding step is performed. Thereby, the temperature of the wafer 1 is set to the temperature of this atmosphere, that is, the environmental temperature of the back surface grinding step. Then, as shown in FIG. 6, the wafer 1 is placed on the second holding surface 151a of the second holding table 151. Thereafter, a negative pressure is generated on the second holding surface 151a by a suction force from a suction source (not shown). The second holding surface 151a sucks and holds the resin layer 10 formed on the front surface 2a of the wafer 1 by the negative pressure. Thereby, the back surface 2b of the wafer 1 is exposed upward.

次に、第２保持テーブル１５１が、たとえば矢印Ｂ方向に回転する。さらに、研削ホイール１５６が、矢印Ｂ方向に回転しながら降下する。そして、研削砥石１６０が、ウェーハ１の裏面２ｂを、押圧しながら研削する。この研削では、ウェーハ１が所望の厚さとなるまで、ウェーハ１の裏面２ｂが削られる。   Next, the second holding table 151 rotates, for example, in the direction of arrow B. Further, the grinding wheel 156 descends while rotating in the direction of arrow B. Then, the grinding wheel 160 grinds the back surface 2b of the wafer 1 while pressing it. In this grinding, the back surface 2b of the wafer 1 is cut until the wafer 1 has a desired thickness.

ここで、本加工方法の作用および効果について説明する。
紫外線照射ステップの後では、図７に示すように、ウェーハ１の表面２ａに形成される樹脂層１０に、矢印Ｃで示すような径方向内向きの収縮力が生じる。この収縮力は、液状樹脂Ｒが、紫外線照射により硬化する際に収縮する性質を有していることに起因する。 Here, the operation and effect of the present processing method will be described.
After the ultraviolet irradiation step, a radially inward contraction force is generated in the resin layer 10 formed on the surface 2a of the wafer 1 as shown by an arrow C, as shown in FIG. This contraction force is due to the property that the liquid resin R contracts when cured by irradiation with ultraviolet light.

したがって、従来、後の裏面研削ステップにおいてウェーハ１の裏面２ｂが削られて、ウェーハ１が薄化されると、この収縮力が、樹脂層１０およびウェーハ１の剛性を上回る場合がある。この場合、図８に示すように、ウェーハ１に反りが生じる。   Therefore, conventionally, when the back surface 2b of the wafer 1 is shaved in a later back surface grinding step and the wafer 1 is thinned, the contraction force may exceed the rigidity of the resin layer 10 and the wafer 1 in some cases. In this case, the wafer 1 is warped as shown in FIG.

これに関し、本加工方法では、紫外線照射ステップにおいて、ウェーハ１における表面２ａ上の液状樹脂Ｒの温度を、裏面研削ステップの環境温度よりも低温にした状態で、液状樹脂Ｒを硬化させて樹脂層１０を形成している。その後の裏面研削ステップでは、樹脂層１０の温度を高めてから、ウェーハ１の裏面２ｂを研削している。   In this regard, in the present processing method, in the ultraviolet irradiation step, the liquid resin R is cured while the temperature of the liquid resin R on the front surface 2a of the wafer 1 is lower than the environmental temperature of the back surface grinding step. 10 are formed. In the subsequent back surface grinding step, the back surface 2b of the wafer 1 is ground after the temperature of the resin layer 10 is increased.

本加工方法でも、紫外線照射ステップの後、樹脂層１０に、図９に矢印Ｃで示すような径方向内向きの収縮力が生じる。しかし、本加工方法では、裏面研削ステップの開始時までに、樹脂層１０が、紫外線照射ステップでの比較的に低い温度から、裏面研削ステップの環境温度にまで昇温される。その結果、樹脂層１０に、図９に矢印Ｄで示すような径方向外向きの膨張力が生じる。
この膨張力は、液状樹脂Ｒが、紫外線照射により硬化する際に収縮する性質に加えて、硬化後の温度上昇に伴って熱膨張する性質を有していることに起因する。 Also in the present processing method, a radially inward contraction force is generated in the resin layer 10 after the ultraviolet irradiation step, as shown by an arrow C in FIG. However, in the present processing method, the temperature of the resin layer 10 is raised from a relatively low temperature in the ultraviolet irradiation step to an ambient temperature in the back grinding step by the time the back grinding step is started. As a result, a radially outward expansion force is generated in the resin layer 10 as shown by an arrow D in FIG.
This expansion force results from the fact that the liquid resin R has a property of contracting when cured by irradiation with ultraviolet rays and a property of thermally expanding with an increase in temperature after curing.

このため、本加工方法では、樹脂層１０における収縮力（矢印Ｃ）と膨張力（矢印Ｄ）とが相殺される。したがって、後の裏面研削ステップにおいてウェーハ１の裏面２ｂが削られて、ウェーハ１が薄化されても、図１０に示すように、樹脂層１０によってウェーハ１が引っ張られることが抑制されるため、ウェーハ１の反りの発生を抑えることが可能となる。   Therefore, in the present processing method, the contraction force (arrow C) and the expansion force (arrow D) in the resin layer 10 are offset. Therefore, even if the back surface 2b of the wafer 1 is shaved in a later back surface grinding step and the wafer 1 is thinned, the wafer 1 is suppressed from being pulled by the resin layer 10 as shown in FIG. The warpage of the wafer 1 can be suppressed.

以下に、本加工方法の効果を確認するための実験結果を示す。
まず、ウェーハ１の表面２ａを液状樹脂Ｒによって被覆し、この液状樹脂Ｒを常温で硬化させて、厚さが５０μｍの樹脂層１０を形成した。その後、ウェーハ１の裏面２ｂを、ウェーハ１が所望の厚さとなるまで研削することによって、比較例を作成した。 Hereinafter, experimental results for confirming the effects of the present processing method will be described.
First, the surface 2a of the wafer 1 was coated with a liquid resin R, and the liquid resin R was cured at room temperature to form a resin layer 10 having a thickness of 50 μm. Thereafter, the back surface 2b of the wafer 1 was ground until the wafer 1 had a desired thickness, thereby preparing a comparative example.

さらに、ウェーハ１の表面２ａを、同様に液状樹脂Ｒによって被覆し、この液状樹脂Ｒを氷水温度にまで低下させた状態で硬化させて、厚さが５０μｍの樹脂層１０を形成した。その後、樹脂層１０を常温に戻した後、ウェーハ１の裏面２ｂを、ウェーハ１が所望の厚さとなるまで研削することによって、実施例を作成した。   Further, the surface 2a of the wafer 1 was similarly coated with a liquid resin R, and the liquid resin R was cured at a temperature lowered to the ice water temperature to form a resin layer 10 having a thickness of 50 μm. Thereafter, the temperature of the resin layer 10 was returned to normal temperature, and then, the back surface 2b of the wafer 1 was ground until the wafer 1 had a desired thickness, thereby producing an example.

そして、図１１に示すような、裏面２ｂの研削後におけるウェーハ１の左端部の反り量（左反り量）ｄ１、および、右端部の反り量（右反り量）ｄ２を測定した。
常温で液状樹脂Ｒを硬化させた比較例では、左反り量ｄ１および右反り量ｄ２は、それぞれ、３８μｍおよび４０μｍであった。一方、氷水温度で液状樹脂Ｒを硬化させた実施例では、左反り量ｄ１および右反り量ｄ２は、それぞれ、３０μｍおよび３８μｍに改善された。 Then, as shown in FIG. 11, the warpage amount (left warpage amount) d1 of the left end of the wafer 1 after grinding the back surface 2b and the warpage amount (right warpage amount) d2 of the right end portion were measured.
In the comparative example in which the liquid resin R was cured at room temperature, the left warpage d1 and the right warpage d2 were 38 μm and 40 μm, respectively. On the other hand, in the example in which the liquid resin R was cured at the ice water temperature, the left warpage d1 and the right warpage d2 were improved to 30 μm and 38 μm, respectively.

なお、本加工方法では、該樹脂被覆ステップにおいて、スピンコートにより、ウェーハ１の表面２ａを液状樹脂Ｒによって被覆している。これにより、液状樹脂Ｒによる表面２ａの被覆を、容易に実施することができる。ただし、表面２ａを液状樹脂Ｒによって被覆する方法は、他のいずれの方法であってもよい。   In this processing method, the surface 2a of the wafer 1 is coated with the liquid resin R by spin coating in the resin coating step. This makes it possible to easily coat the surface 2a with the liquid resin R. However, the method of coating the surface 2a with the liquid resin R may be any other method.

また、本実施形態では、紫外線照射ステップにおいて、ウェーハ１を低温の雰囲気にさらすことにより、その表面２ａ上の液状樹脂Ｒの温度を下げている。しかしながら、表面２ａ上の液状樹脂Ｒの温度を下げる方法は、これに限られず、どのような方法でもよい。たとえば、低温のチャックテーブルによってウェーハ１を保持することにより、表面２ａ上の液状樹脂Ｒの温度を下げてもよい。   In the present embodiment, in the ultraviolet irradiation step, the temperature of the liquid resin R on the surface 2a of the wafer 1 is lowered by exposing the wafer 1 to a low-temperature atmosphere. However, the method of lowering the temperature of the liquid resin R on the surface 2a is not limited to this, and any method may be used. For example, the temperature of liquid resin R on surface 2a may be lowered by holding wafer 1 with a low-temperature chuck table.

また、紫外線照射ステップ時の液状樹脂Ｒの温度を、予測されるウェーハ１の反り量に応じて決定してもよい。たとえば、反り量が比較的に大きいと予想される場合には、紫外線照射ステップ時の液状樹脂Ｒの温度を、比較的に低くして、樹脂層１０の熱膨張力を大きくしてもよい。一方、反り量が比較的に小さいと予想される場合には、紫外線照射ステップ時の液状樹脂Ｒの温度を、比較的に高くして、樹脂層１０の熱膨張力を小さくしてもよい。このように、本実施形態では、ウェーハ１の反りの量（反りの強さ）に応じて、紫外線照射ステップ時の液状樹脂Ｒの温度を調整してもよい。   Further, the temperature of the liquid resin R at the time of the ultraviolet irradiation step may be determined according to the predicted amount of warpage of the wafer 1. For example, when the amount of warpage is expected to be relatively large, the temperature of the liquid resin R at the time of the ultraviolet irradiation step may be set relatively low to increase the thermal expansion force of the resin layer 10. On the other hand, when the amount of warpage is expected to be relatively small, the temperature of the liquid resin R at the time of the ultraviolet irradiation step may be set relatively high to reduce the thermal expansion force of the resin layer 10. As described above, in the present embodiment, the temperature of the liquid resin R at the time of the ultraviolet irradiation step may be adjusted in accordance with the amount of warpage (warpage strength) of the wafer 1.

また、本実施形態では、図３に示した被覆装置１１により、保持ステップおよび樹脂被覆ステップを実施している。これに代えて、被覆装置１１により、保持ステップ、樹脂被覆ステップおよび紫外線照射ステップを実施してもよい。これは、たとえば、被覆装置１１に、ウェーハ１を冷却するための冷却装置、および、ウェーハ１に紫外線を照射するための紫外線照射装置を備えることによって実現されてもよい。冷却装置は、たとえば、ウェーハ１を保持する第１保持テーブル２０を低温とする装置であってもよい。   Further, in this embodiment, the holding step and the resin coating step are performed by the coating apparatus 11 shown in FIG. Alternatively, the holding step, the resin coating step, and the ultraviolet irradiation step may be performed by the coating apparatus 11. This may be realized, for example, by providing the coating apparatus 11 with a cooling device for cooling the wafer 1 and an ultraviolet irradiation device for irradiating the wafer 1 with ultraviolet light. The cooling device may be, for example, a device that lowers the temperature of the first holding table 20 that holds the wafer 1.

また、本実施形態では、図６に示した研削装置１５０により、裏面研削ステップが実施されている。これに代えて、研削装置１５０により、紫外線照射ステップおよび裏面研削ステップが実施されてもよい。これは、たとえば、研削装置１５０に、ウェーハ１を冷却するための冷却装置、および、ウェーハ１に紫外線を照射するための紫外線照射装置を備えることによって実現されてもよい。   Further, in the present embodiment, the back surface grinding step is performed by the grinding device 150 shown in FIG. Instead, the ultraviolet irradiation step and the back surface grinding step may be performed by the grinding device 150. This may be realized by, for example, providing the grinding device 150 with a cooling device for cooling the wafer 1 and an ultraviolet irradiation device for irradiating the wafer 1 with ultraviolet light.

また、本実施形態では、本加工方法を実施するために、被覆装置１１および研削装置１５０が用いられている。これに代えて、たとえば、図３に示した被覆装置１１が、研削装置１５０を兼ねていてもよい。これは、たとえば、被覆装置１１に、ウェーハ１の裏面２ｂを研削するための構成、たとえば、図６に示したスピンドル１５２、マウント１５４および研削ホイール１５６を備えることによって実現されてもよい。この構成では、第１保持テーブル２０は、第２保持テーブル１５１を兼ねる。   Further, in the present embodiment, the coating device 11 and the grinding device 150 are used to carry out the present processing method. Instead of this, for example, the coating device 11 shown in FIG. 3 may also serve as the grinding device 150. This may be realized, for example, by providing the coating apparatus 11 with a configuration for grinding the back surface 2b of the wafer 1, for example, the spindle 152, the mount 154, and the grinding wheel 156 shown in FIG. In this configuration, the first holding table 20 also serves as the second holding table 151.

また、被覆装置１１が研削装置１５０を兼ねる場合、被覆装置１１は、ウェーハ１を冷却するための冷却装置、および、ウェーハ１に紫外線を照射するための紫外線照射装置をさらに備えてもよい。これにより、被覆装置１１は、紫外線照射ステップをも実施することが可能となる。したがって、本加工方法の全てのステップを、１つの被覆装置１１によって実施することができる。   When the coating device 11 also serves as the grinding device 150, the coating device 11 may further include a cooling device for cooling the wafer 1 and an ultraviolet irradiation device for irradiating the wafer 1 with ultraviolet light. Thus, the coating apparatus 11 can perform the ultraviolet irradiation step. Therefore, all steps of the processing method can be performed by one coating apparatus 11.

１：ウェーハ、２ａ：表面、２ｂ：裏面、３：分割予定ライン、
４：デバイス、５：デバイス領域、６：外周余剰領域、Ｒ：液状樹脂、１０：樹脂層、
１１：被覆装置、１３：保持部、１５：樹脂供給部、
２０：第１保持テーブル、２１：第１保持面、
２２：スピンドル、２４：基台、３１：樹脂供給ノズル、
３１ａ：樹脂供給口、３３：支持台、
１５０：研削装置、１５１：第２保持テーブル、１５１ａ：第２保持面、
１５２：スピンドル、１５４：マウント、
１５６：研削ホイール、１５８：基台、１６０：研削砥石 1: wafer, 2a: front surface, 2b: back surface, 3: scheduled dividing line,
4: device, 5: device region, 6: outer peripheral surplus region, R: liquid resin, 10: resin layer,
11: coating device, 13: holding unit, 15: resin supply unit,
20: first holding table, 21: first holding surface,
22: spindle, 24: base, 31: resin supply nozzle,
31a: resin supply port, 33: support base,
150: grinding device, 151: second holding table, 151a: second holding surface,
152: spindle, 154: mount,
156: grinding wheel, 158: base, 160: grinding wheel

Claims (2)

格子状に形成された複数の分割予定ラインによって区画され表面にデバイスが形成された被加工物の裏面を、所望の厚さまで研削する被加工物の加工方法であって、
該デバイスが形成された該表面側を露出させるように、第１保持テーブルの第１保持面によって該被加工物を吸着保持する保持ステップと、
該被加工物の該表面に、紫外線の照射を受けることにより硬化する液状樹脂を供給し、該被加工物の該表面を該樹脂で被覆する樹脂被覆ステップと、
該樹脂被覆ステップにて該被加工物の該表面を被覆した該樹脂を、裏面研削ステップの環境温度よりも低温の状態で硬化させて樹脂層を形成する紫外線照射ステップと、
該紫外線照射ステップの実施後、該被加工物の該表面を第２保持テーブルの第２保持面によって吸着保持し、該被加工物の該裏面の研削を実施する裏面研削ステップと、を備え
該裏面研削ステップの環境温度よりも低温の状態で該樹脂を硬化させることにより、該被加工物の反りを低減可能とすることを特徴とする被加工物の加工方法。 A method of processing a workpiece to be ground to a desired thickness, the back surface of the workpiece having a device formed on the surface thereof, which is partitioned by a plurality of planned dividing lines formed in a lattice shape,
A holding step of sucking and holding the workpiece by a first holding surface of a first holding table so as to expose the surface side on which the device is formed;
A resin coating step of supplying a liquid resin that is cured by being irradiated with ultraviolet rays to the surface of the workpiece, and coating the surface of the workpiece with the resin,
An ultraviolet irradiation step of forming the resin layer by curing the resin coated on the front surface of the workpiece in the resin coating step at a temperature lower than the environmental temperature of the back surface grinding step;
A back surface grinding step of holding the surface of the workpiece by suction by a second holding surface of a second holding table and performing grinding of the back surface of the workpiece after performing the ultraviolet irradiation step. A method of processing a workpiece, wherein the resin is cured at a temperature lower than the environmental temperature of the back surface grinding step so that warpage of the workpiece can be reduced. 該樹脂被覆ステップは、スピンコートにより、該被加工物の該表面を該樹脂によって被覆することを含むことを特徴とする、
請求項１記載の被加工物の加工方法。 The resin coating step includes coating the surface of the workpiece with the resin by spin coating.
The method for processing a workpiece according to claim 1.
JP2018152658A 2018-08-14 2018-08-14 Workpiece processing method Active JP7115932B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018152658A JP7115932B2 (en) 2018-08-14 2018-08-14 Workpiece processing method
CN201910660721.8A CN110828306B (en) 2018-08-14 2019-07-22 Method for processing object to be processed
TW108128709A TWI807084B (en) 2018-08-14 2019-08-13 The processing method of the processed object
KR1020190098847A KR102638139B1 (en) 2018-08-14 2019-08-13 Method for processing workpiece

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018152658A JP7115932B2 (en) 2018-08-14 2018-08-14 Workpiece processing method

Publications (2)

Publication Number Publication Date
JP2020027898A true JP2020027898A (en) 2020-02-20
JP7115932B2 JP7115932B2 (en) 2022-08-09

Family

ID=69547658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018152658A Active JP7115932B2 (en) 2018-08-14 2018-08-14 Workpiece processing method

Country Status (4)

Country Link
JP (1) JP7115932B2 (en)
KR (1) KR102638139B1 (en)
CN (1) CN110828306B (en)
TW (1) TWI807084B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0887779A (en) * 1994-09-16 1996-04-02 Nkk Corp Coating method and coating device for optical recording medium
US20070267724A1 (en) * 2006-05-16 2007-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having stress tuning layer and methods of manufacturing same
JP2009054965A (en) * 2007-08-29 2009-03-12 Renesas Technology Corp Method of manufacturing semiconductor device
JP2009094335A (en) * 2007-10-10 2009-04-30 Nec Electronics Corp Semiconductor device and its manufacturing method
JP2010251978A (en) * 2009-04-14 2010-11-04 Shin-Etsu Chemical Co Ltd Method of manufacturing composite piezoelectric board and composite piezoelectric board

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4598577B2 (en) * 2005-03-28 2010-12-15 芝浦メカトロニクス株式会社 Resin layer curing apparatus and resin layer curing method
KR100952286B1 (en) 2007-10-30 2010-04-12 주식회사 엘지화학 Optical films, phase difference films, and lcd comprising the same
JP2011155112A (en) * 2010-01-27 2011-08-11 Disco Abrasive Syst Ltd Method of processing wafer
WO2012098734A1 (en) * 2011-01-18 2012-07-26 旭化成イーマテリアルズ株式会社 Resin composition, cured object, resin film, and wiring board
JP2013084770A (en) * 2011-10-11 2013-05-09 Disco Abrasive Syst Ltd Grinding method for wafer
WO2016143583A1 (en) * 2015-03-10 2016-09-15 日本電気硝子株式会社 Semiconductor supporting glass substrate and laminated substrate using same
JP6621338B2 (en) * 2016-02-09 2019-12-18 株式会社ディスコ Workpiece resin coating method and work piece processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0887779A (en) * 1994-09-16 1996-04-02 Nkk Corp Coating method and coating device for optical recording medium
US20070267724A1 (en) * 2006-05-16 2007-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having stress tuning layer and methods of manufacturing same
JP2009054965A (en) * 2007-08-29 2009-03-12 Renesas Technology Corp Method of manufacturing semiconductor device
JP2009094335A (en) * 2007-10-10 2009-04-30 Nec Electronics Corp Semiconductor device and its manufacturing method
JP2010251978A (en) * 2009-04-14 2010-11-04 Shin-Etsu Chemical Co Ltd Method of manufacturing composite piezoelectric board and composite piezoelectric board

Also Published As

Publication number Publication date
TWI807084B (en) 2023-07-01
CN110828306B (en) 2024-02-20
TW202009997A (en) 2020-03-01
CN110828306A (en) 2020-02-21
KR20200019582A (en) 2020-02-24
KR102638139B1 (en) 2024-02-16
JP7115932B2 (en) 2022-08-09

Similar Documents

Publication Publication Date Title
JP2017079291A (en) Wafer processing method
JP7071782B2 (en) Wafer processing method
US11062948B2 (en) Wafer processing method
JP2017059766A (en) Wafer processing method
CN112400217A (en) Substrate processing system and substrate processing method
JP6914587B2 (en) Wafer processing method
US10115578B2 (en) Wafer and method of processing wafer
TW201308414A (en) Cutting method of processed object
JP6524564B2 (en) Method of manufacturing element chip and substrate heating apparatus
US11043421B2 (en) Wafer processing method
JP7115932B2 (en) Workpiece processing method
TWI685556B (en) Cutting processing method of workpiece
US20190378745A1 (en) Wafer processing method
JP6621338B2 (en) Workpiece resin coating method and work piece processing method
JP5570298B2 (en) Wafer processing method
JP2018198241A (en) Processing method for wafer
JP2019009372A (en) Grinding method of wafer
JP5378932B2 (en) Grinding method of workpiece
JP2020027918A (en) Resin coating method
TWI773838B (en) Grinding method of workpiece
JP2013187281A (en) Method for processing workpiece
JP7214309B2 (en) Wafer processing method
JP6137999B2 (en) Wafer processing method
JP2022178899A (en) Wafer processing method
JP7132710B2 (en) Wafer processing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210616

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220630

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220705

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220728

R150 Certificate of patent or registration of utility model

Ref document number: 7115932

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150