TW202004995A - 用於臨時性或永久性晶圓接合之方法 - Google Patents

用於臨時性或永久性晶圓接合之方法 Download PDF

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Publication number
TW202004995A
TW202004995A TW108113753A TW108113753A TW202004995A TW 202004995 A TW202004995 A TW 202004995A TW 108113753 A TW108113753 A TW 108113753A TW 108113753 A TW108113753 A TW 108113753A TW 202004995 A TW202004995 A TW 202004995A
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TW
Taiwan
Prior art keywords
substrate
bonding
temperature
conductive
wafer
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TW108113753A
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English (en)
Chinese (zh)
Inventor
文森 梅弗雷克
多明尼可 蘇爾
賽琳 多索特
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法商阿文尼公司
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Application filed by 法商阿文尼公司 filed Critical 法商阿文尼公司
Publication of TW202004995A publication Critical patent/TW202004995A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW108113753A 2018-04-20 2019-04-19 用於臨時性或永久性晶圓接合之方法 TW202004995A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862660289P 2018-04-20 2018-04-20
US62/660,289 2018-04-20

Publications (1)

Publication Number Publication Date
TW202004995A true TW202004995A (zh) 2020-01-16

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ID=66286329

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108113753A TW202004995A (zh) 2018-04-20 2019-04-19 用於臨時性或永久性晶圓接合之方法

Country Status (2)

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TW (1) TW202004995A (fr)
WO (1) WO2019202067A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2843756B1 (fr) * 2002-08-26 2005-04-22 Commissariat Energie Atomique Procede de soudage d'une surface polymere avec une surface conductrice ou semi-conductrice et ses applications
FR2860523B1 (fr) * 2003-10-01 2006-01-13 Commissariat Energie Atomique Procede de formation d'un film polymere sur une surface conductrice ou semi-conductrice de l'electricite par electro-greffage, surfaces obtenues et applications
WO2007099218A1 (fr) 2006-02-28 2007-09-07 Commissariat A L'energie Atomique Procede de formation de films organiques sur des surfaces conductrices ou semi-conductrices de l'electricite a partir de solutions aqueuses
US9263314B2 (en) * 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
US8962449B1 (en) * 2013-07-30 2015-02-24 Micron Technology, Inc. Methods for processing semiconductor devices

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Publication number Publication date
WO2019202067A1 (fr) 2019-10-24

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