TW201944600A - Multi-stage dual-series multiple die sets structure diode component suitable for the assembly of components such as small volume, high power and high voltage-resistance rectifier diodes or surge suppression protection type diodes - Google Patents

Abstract

A multi-stage dual-series multiple die sets structure diode component includes 2N die sets. The top surfaces of two die sets, the front (the first) die set and the rear (the 2N-th) die set, are each provided with an electrode plate used as the first and second electrodes of the component. N lower guide plates connect the bottom surfaces of any two of the 2N die sets, and (N-1) upper guide plates connect the top surfaces of any two of (2N-2) die sets (i.e., the 2N die sets excluding the front and rear die sets) to form a complete diode component structure. The component structure is filled with an insulating substance between the die sets except the electrode plates of the first and second electrodes and the periphery thereof. The assembly of the component can arbitrarily adjust the number of die sets according to the electrical requirements, and the number of layers of each die set can be different, which is particularly suitable for the assembly of components such as small volume, high power and high voltage-resistance rectifier diodes or surge suppression protection type diodes.

Description

   Multi-segment double tandem polycrystalline structure diode device   

The present invention is a multi-segment double-tandem poly-crystal structured diode element. The technical content relates to the assembly of 2N crystal groups with corresponding upper and lower guide plates to form a diode element. The diode element has the characteristics of high power, high withstand voltage, and can be flexibly assembled and reduced in size.

Traditional diode packages are roughly divided into shaft type, SMD, SOD, etc. Generally, high voltage and high power components are still mainly shaft type packages, SMD packages are more suitable for general power components, and smaller packages such as SOD are more suitable for low power. Low-voltage components, these packaging methods are familiar to the world, and will not be repeated here; however, the biggest problem with its axial packaging is that its component body is too long or too high, which is suitable for plug-in assembly processes, and is not suitable for miniaturized surface adhesion. Assembly process and requirements.

In recent years, there are also other distinctive manufacturing methods in the production of surface-adhesive components. Taking "multifunctional miniaturized surface-adhesive electronic components and its manufacturing method (TW201631736A)" as an example, although it is suitable for its regulated length (L) and width (W) and thickness (T) of miniaturized components, but for the needs of high-power rectification or protection diodes and other components, this process is not suitable: one is its defined package size and the use of upper and lower lines The board is connected between the top and the bottom of the die module, which is not suitable for the characteristics of high power components. The second is that the first electrode and the second electrode of all components are respectively located on the upper and lower circuit boards. The components are cut, and then the electrodes at both ends are connected. The manufacturing process is relatively complicated. The third is that the array of the invention is assembled into multiple groups of homogeneous crystal groups in parallel, which is different from the structure of the multi-stage dual tandem polycrystal group of the present invention. .

Take the Japanese invention patent "Zhao 50-13492 bidirectional constant voltage type semiconductor device" as an example. The invention is intended to use a unidirectional diode in parallel to achieve the bidirectional conduction effect. However, this packaging method uses a full unidirectional reverse Although the size of the parallel connection is smaller than that of the full unidirectional single string type, it is still relatively large today, which is obviously different from the multi-segment dual series combination method of the present invention that uses a bidirectional crystal group directly.

Looking at the methods of the above and other related inventions, in addition to the differences in structural processes, the biggest problem is that the flexibility of the actual assembly is insufficient to meet the needs of the high-pressure, high-power, reduced volume, and reduced cost. solution.

The purpose of the present invention is to provide a multi-segment double-tandem polycrystalline structure structure diode element (the so-called multi-segment double-string connection refers to that the constituent crystal grains in each crystal group in the structure mode of the present invention are combined in series, and The multi-segment series combination is used between each crystal group), and its construction method can not only meet the requirements of high voltage, high power, reduce volume, and reduce cost, but also flexibly expand the number of crystal groups and Type, the number of layers of each crystal group can be designed into the same number of layers or a combination of different numbers of layers according to electrical requirements, and the polar direction of the combination is not limited. The number of packaging groups can also be adjusted according to space requirements, suitable for general rectifier diodes or The combined package of components such as protective diodes is more suitable for the configuration of high power and / or high withstand voltage rectifier diodes or surge suppression protective diodes.

In order to simplify the production of the first and second electrodes and directly build them on the same side or the same side of the element, the number of crystal groups of the present invention is evenly configured, that is, 2N groups, N ≧ 1; another is to simplify the present invention. The example of the implementation mode will be mainly explained with the cooperation of the group below the double-layer four-crystal group, and the elastic combination of the crystal group with different electrical characteristics will only be briefly explained (the combination above the double-layer four-crystal group will be analogized by the example) .

The multi-stage dual tandem polycrystalline structure structure diode element of the present invention includes 2N crystal groups, N connected to the lower guide plate at the bottom of each crystal group, (N-1) upper guide plates connected to the top of each crystal group, Two electrode plates (copper plates or tin tables, etc., which are omitted below) placed above the first and 2N group crystals, and an insulating substance for curing and protecting the component structure, where N ≧ 1; its main characteristics are : 2N crystal groups are arranged in order according to the design requirements of electrical characteristics; the N lower guide plates respectively connect 2N crystal groups from the first group with the bottom of every two crystal groups connected by tin (that is, 1, 2 groups connected, 3 , 4 sets of connections, ..., (2N-1), 2N sets of connections); the (N-1) upper guide plates are respectively placed in the (2N-2) crystal groups excluding the first and 2N crystal groups And the top of every two crystal groups from the second group are connected by tin (that is, 2, 3 groups, 4, 5 groups, ..., (2N-2), (2N-1) groups) ; The two electrode plates are respectively connected with the top electrode surface above the first crystal group and the 2N crystal group by tin material, and are the first electrode and the second electrode connected to the external circuit; the first electrode and the second electrode are exposed In addition, between the other ministries and their periphery Insulating material filled with a transparent or opaque.

The construction procedure is as follows: 1) N lower guide plates are made on the designed jig; 2) The 2N crystal groups are sequentially placed on both ends of the N lower guide plates according to the electrical characteristic plan: the The N lower guide plates respectively connect 2N crystal groups from the first group with the bottom of every two crystal groups connected by tin (that is, 1, 2 groups, 3, 4 groups, ..., (2N-1), 2N (Group connection); 3) Place the (N-1) upper guides on the top surface of the corresponding crystal group: the (N-1) upper guides are placed separately from the (1-1 and 2N crystal group) 2N-2) the tops of the crystal groups, and from the second group, the tops of every two crystal groups are connected by tin (that is, 2, 3 groups, 4, 5 groups, ..., (2N-2), ( 2N-1) group connection); 4) the two electrode plates are respectively connected to the top electrode surface above the first crystal group and the 2N crystal group with tin materials; 5) the first electrode and the second electrode are exposed, The other parts and their periphery are filled with transparent or opaque insulating substances.

During implementation, the electrical type of each crystal group of the 2N crystal groups can be unitary (single class, all unidirectional or all bidirectional); or the individual crystal grains in each crystal group can be a multi-class mixed combination. , And can be combined in the same direction, can also be combined with forward and reverse staggered and combined unidirectional functional crystal group and bidirectional functional crystal group, all combination structure is a multi-segment series structure; each crystal group of the 2N crystal group All layers can be adjusted or expanded vertically according to electrical requirements, and the number of layers in each crystal group can be the same. Different layers and different combinations can be made according to different electrical requirements; for example, N = 1 double crystal group For example, it can be divided into (1,1), (2,2), (3,3), (4,4), ... (the number size represents the number of stacks, a group with two numbers represents two crystals Group) combinations, (1,0), (2,0), ... (2,1), (3,2), (4,3), ... and other combinations; N = 2 four-crystal group, Then divide (1,1,1,1), (2,2,2,2), (3,3,3,3), (4,4,4,4), ... (the number represents the number of stacks, A group of four numbers represents the four-crystal group). In addition to (1,1,1,0), (2,2.2.0), ... (2,2,2,1), (2,2, 1,1), (2,1,1,1), (3,3,3,2), (3,3,2 , 2), (3,2,2,2), (4,4,4,4), (4,4,4,3), (4,4,3,3), (4,3,3 , 3), etc., and so on; and in the various combinations listed above, it is only necessary to add a conductive metal such as copper particles with a relative thickness to the crystal group with less stacking, which is even more difficult. The most flexible feature of the invention.

In the above combination, if the package size (package) is limited, and the actual electrical requirements do not require a full 2N crystal group combination, the insufficient crystal group can be replaced by a conductive metal (such as copper particles, etc.) with a corresponding thickness, for example In the above (2,2,2,0), the corresponding position of the 0 stack crystal group is replaced by a conductive metal (such as copper particles, etc.) of corresponding thickness.

The components constructed according to the present invention have the following characteristics:

1) Use 2N crystal group structure to ensure that the two electrodes of the component are on the same side.

2) Due to the use of (2N-1) upper and lower guide plates, it can more effectively dissipate heat and strengthen the component characteristics, which is suitable for the configuration of high-power, high-voltage rectifier / protection diode components.

3) Since external conductive electrode plates are directly added to the top surfaces of the crystal groups at both ends, in addition to simplifying the manufacturing process, the component size can be reduced.

4) The number of crystal groups of each component and the number of layers of each crystal group can be flexibly assembled according to the electrical requirements of each component and the requirements of its packaging package.

5) The various crystal groups of each component can be combined in different polar directions according to electrical requirements, and different types of crystal grains and different polar combinations can be made in each crystal group.

6) Compared with the general assembly process, it can effectively reduce costs.

The structure of the multi-segment double-tandem polycrystalline structure structure can be deduced and applied to the combination of at least one parallel crystal group (the two crystal groups are regarded as another new crystal group in parallel) and at least one single crystal group In the tandem structure, the component thus constructed includes a plurality of single crystal groups connected in series, at least two single crystal groups connected in parallel to form a new crystal group, and the new crystal group and at least one single crystal group. Multi-parallel series-parallel-serial multi-segment dual-tandem polycrystalline group structure, as shown in Figure 18, and so on.

In conjunction with the above description, some examples of N ≦ 2 and the number of layers ≦ 2 in this creation are listed below, and described later with drawings.

10‧‧‧The first crystal group

10A‧‧‧New First Crystal Group

20‧‧‧ 2N crystal group

11‧‧‧ Tin

12, 22‧‧‧ electrode plate

30‧‧‧ lower guide

31‧‧‧First lower guide

32‧‧‧ Second lower guide

33‧‧‧ Upper guide

40‧‧‧Insulation

50‧‧‧first electrode

60‧‧‧Second electrode

80‧‧‧ third crystal group

90‧‧‧ fourth crystal group

100‧‧‧ Any crystal group

300‧‧‧ Copper pellets

First diagram: A schematic structural diagram of a first embodiment of the present invention using a unidirectional dual crystal group (1,1).

Second figure: A schematic diagram of the structure of the present invention using a unidirectional dual crystal group dual stack (2, 2).

Third figure: The structure diagram of the present invention using a unidirectional four-crystal group (1,1,1,1).

Fourth figure: The present invention uses a unidirectional four-crystal group dual stack (2,2,2,2).

Fifth Figure: A schematic structural diagram of a bidirectional dual crystal group (1, 1) according to a second embodiment of the present invention.

FIG. 6 is a schematic structural diagram of the present invention using a bidirectional dual crystal group and a double stack (2, 2).

Figure 7: Schematic diagram of the present invention using a bidirectional four-crystal group (1,1,1,1).

Eighth diagram: The present invention uses a bidirectional four-crystal group dual stack (2,2,2,2).

Ninth figure: A schematic plan view of a square crystal arrangement of a four-crystal group according to the present invention.

Tenth figure: A schematic diagram of a structure in which the second crystal group of the double crystal group (2,1) in the present invention has one less layer and is replaced with copper particles.

Figure 11: A schematic diagram of a structure in which the fourth crystal group in the four-crystal group (2, 2, 2, 1) combination of the present invention has one less layer and is replaced with copper particles.

Twelfth figure: A schematic structural diagram of the third and fourth crystal groups in the four-crystal group (2,2,1,1) combination in the present invention each having one layer less and each being replaced by copper particles.

Thirteenth figure: The schematic diagram of the structure of the second crystal group and the third crystal group in the four-crystal group (2,1,1,2) combination in the present invention is replaced by copper particles.

Fourteenth figure: The schematic diagram of the fourth crystal group in the combination of the four crystal group (1,1,1,0) in the present invention is 0 layer and is replaced by copper particles.

Figure 15: Schematic diagram of the structure of the fourth crystal group of the four-crystal group (2,2,2,0) in the present invention with 0 layers and being replaced by double-layer copper particles.

Figure 16: Schematic diagram of the present invention using a combination of dual crystal groups (2, 2) with different polar orientations.

Figure 17: Schematic diagram of the combination of two-layer four-crystal groups (2, 2, 2, 2) with different polar orientations of the present invention.

Figure 18: Schematic diagram of the present invention combining two double-layer crystal groups in parallel with another double-layer crystal group in series (( 2 , 2), 2).

As shown in the first graph to the fourth graph, this is an example of a power type diode element of the dual series multi-segment polycrystalline structure of the present invention, N ≦ 2, and the number of layers ≦ 2. The first graph: (1,1 ) Is the configuration of N = 1, 2N = 2, number of layers = 1, and one-way dual crystal group. A first crystal group 10 and a second (2N = 2, the same as the following are omitted) crystal group 20 are configured. Above the lower guide plate 30; wherein the bottom surface of the first crystal group 10 and the second crystal group 20 are electrically connected to the lower guide plate 30 with tin material 11, respectively, and the top surfaces are respectively provided with electrode plates 12, 22, and the first The outer periphery of the crystal group 10 and the second crystal group 20 and each other are filled with an insulating substance 40, so that the electrode plates 12, 22 on the top surfaces of the first crystal group 10 and the second crystal group 20 are insulated from each other for external use. The first electrode 50 and the second electrode 60 connected to the circuit are completed. In this way, the circuit and configuration of a complete diode element are completed. The electrical properties of the two crystal groups in this embodiment may be the same type or Not the same type.

As shown in the second figure: (2, 2) is a configuration example of N = 1, 2N = 2, number of layers = 2, and a unidirectional dual crystal group. The first crystal group 10 and the second crystal group 20 are unidirectional, respectively. The double-layered crystal group has a top surface connected to an electrode plate 12 and 22 with tin material 11 respectively, and the electrical connection surfaces of the bottom surfaces of the two stacked layers are different polar directions, and are respectively connected to the lower guide plate 30 with tin material 11 and the first The insulating material 40 is filled between the crystal groups except the second electrodes 50 and 60 and the periphery thereof, and a complete diode element circuit and assembly are completed.

As shown in the third figure: (1,1,1,1) is N = 2, 2N = 4, number of layers = 1, unidirectional four-crystal group unidirectional configuration, the first crystal group 10 and the second crystal group The bottom surface of 80 is connected with the first lower guide plate 31 by the tin material 11; the bottom surface of the third crystal group 90 and the fourth crystal group 20 are connected with the second lower guide plate 32 by the tin material; the second crystal group 80 and the first An upper guide plate 33 is connected between the top surfaces of the three crystal group 90 with a tin material 11; an electrode plate 12 is disposed on each of the top surfaces of the first crystal group 10 and the fourth crystal group (2N = 4, same abbreviation). After filling the insulating material 40 between the crystal groups except the first and second electrodes 50 and 60 and the periphery thereof, a complete diode element circuit and structure are completed.

As shown in the fourth figure (2,2,2,2) is N = 2, the number of layers = 2, 2N = 4, which is a unidirectional configuration embodiment of a unidirectional double-layer four-crystal group, the first crystal group 10 And the bottom surface of the second crystal group 80 is connected with the first lower guide plate 31 by the tin material 11; the bottom surface of the second lower guide plate 32 is connected with the bottom surface of the third crystal group 90 and the fourth crystal group 20 by the tin material 11; and the upper guide plate 33 is It is connected between the top surface of the second crystal group 80 and the third crystal group 90 and is connected with the tin material 11; the top surfaces of the first crystal group 10 and the fourth crystal group 20 are each provided with electrode plates 12, 22; Filling the crystal group except the first and second electrodes 50 and 60 and the periphery thereof with an insulating substance 40 completes a complete diode element circuit and structure.

The fifth to eighth figures show the crystal groups in which all the crystal groups use bidirectional electrical functions as an example. The difference from the embodiments shown in the first to fourth figures is that all the crystal groups are bidirectional electrical functions. It is constructed as a diode element with full bidirectional function. Since all crystal groups and each crystal grain in each crystal group are bidirectional, it is easier to assemble without distinguishing the orientation of each crystal grain or crystal group; for example, :

The fifth picture corresponds to the first picture, where the fifth picture (1,1), N = 1, 2N = 2, bidirectional single-layer double crystal group, except for the first crystal group 10 and the second (2N = 2) crystal group 20 The bottom surface and the top surface are the same with the poles facing outward. The connection between the top surface of the first crystal group 10 and the second (2N = 2) crystal group 20 and the two electrode plates 12, 22 and the first crystal group 10 and the second ( 2N = 2) The connection manner between the bottom surface of the crystal group 20 and the lower guide plate 30 is the same as that of the first example.

The sixth figure corresponds to the second figure, in which the first crystal group 10 and the second (2N = 2) crystal group 20 have the same polar orientation except that the bottom surface and the top surface of the first crystal group 10 and the second (2N = 2) crystal group 20 have the same polarity. The connection manner between the top surface of the group 20 and the two electrode plates 12, 22 and the connection manner between the bottom surface of the first crystal group 10 and the second (2N = 2) crystal group 20 and the lower guide plate 30 are the same as those in the second illustration.

The seventh and eighth figures correspond to the third and fourth figures. Except that each crystal group is a bidirectional crystal group, the two electrode plates 12 and 22 are respectively the first crystal group 10 and the fourth crystal group (2N). = 4) 20 is connected to the top surface, the two lower guide plates 31, 32 are connected to the bottom surfaces of the corresponding crystal groups (the first crystal group 10 and the second crystal group 80, the third crystal group 90 and the fourth crystal group 20), and The method of connecting the upper guide plate 33 to the top surface of the corresponding crystal group (the second crystal group 80 and the third crystal group 90) is the same, which is not repeated here.

The ninth figure shows a top view of a square structure with N = 2 and 2N = 4. The first crystal group 10, the second crystal group 80, the third crystal group 90, and the fourth (2N = 4) crystal group 20 are square. The configuration, the production of the first and second electrodes 50, 60, the bottom surface of each crystal group is connected to each of the lower guide plates 31, 32, and the top surface of each crystal group is connected to each of the upper guide plates 33 in the same way as in the seventh example above, Because of the square configuration, the first and second electrodes 50 and 60 are juxtaposed on the same side of the element; and so on, as long as a series circuit configuration is formed between each of the 2N crystal groups.

The tenth to thirteenth diagrams are all examples of combinations of crystal groups with different layers. The tenth and eleventh diagrams are examples of each element combination crystal group having one less layer of crystal grains, of which The positions of the grains in the lower layer are each replaced by a copper grain 300. In addition, the twelfth and thirteenth diagrams are each composed of a crystal group with two crystal groups each having one less crystal grain, and each with one copper grain. Example replaced by 300; Yu and so on.

The fourteenth and fifteenth figures are examples of less than 2N crystal groups. In the figure, the combination of three crystal groups and one copper particle 300 to replace the fourth crystal group (2N = 4) 20 (1, 1,1,0), (2,2,2,0), the construction method is the same as the previous example, and will not be described again; the rest can be deduced by analogy.

Figures 16 and 17 show examples of different polar crystal group combinations (2,2) and (2,2,2,2). The construction method is the same as the previous example and will not be described again; Yu Yi And so on.

The eighteenth figure is an example in which a first crystal group 10 and any crystal group 100 are connected in parallel to form a new first crystal group 10A and then a second crystal group (2N = 2) 20 is connected in series (( 2 , 2), 2). (( 2,2 ) represents a new first crystal group 10A formed by paralleling two double-layer crystal groups): the two double-layer crystal groups are first connected in parallel ( 2,2 ) to form a new first crystal group 10A and then connected with the other The (( 2 , 2,), 2) element constructed by the double-layer second crystal group 20 has the same assembly method as the previous example, and will not be repeated; the rest may be deduced by analogy.

As described in the first to fourth illustrated embodiments, the fifth to eighteenth illustrated embodiments described above need to be filled with an insulating substance 40 between each crystal group and its periphery after assembly, and the first The electrode plates 12 and 22 of the crystal group 10 and the 2N crystal group 20 are exposed outside the insulating material 40 as the first electrode 50 and the second electrode 60 connected to an external circuit.

The above embodiment descriptions and drawings are only part of the embodiments of the present invention, and are not intended to limit the scope of the present invention. Any similarity or similarity to the structure, device, features, etc. of the invention shall belong to the application of the present invention. Within the scope of the patent, I hereby declare.

Claims (6)

    A multi-segment dual tandem polycrystalline structure structure diode device includes 2N crystal groups, and an electrode plate is arranged on the top surface of the front (first crystal group) and rear (second N group) respectively as the first element. Second electrode: N lower guide plates connect the bottom surfaces of 2N crystal groups in pairs. (N-1) upper guide plates connect the top surfaces of (2N-2) crystal groups except the front and rear crystal groups. They are connected to form a complete diode element structure. The element structure is filled with insulating material between the crystal groups and the periphery of the element structure except the electrode plates of the first and second electrodes.         The multi-segment dual tandem polycrystalline structure structure diode device according to claim 1, wherein the electrical type of each crystal group of the 2N crystal groups can be single (single type, all unidirectional or all bidirectional). ); It is also possible that the individual grains formed in each crystal group are a multi-type mixed combination, and can be combined in all directions, or can be combined in a forward and reverse direction, and a unidirectional functional crystal group and a bidirectional functional crystal group can be combined, all The combined structure is a multi-segment double series structure.         The multi-segment dual series polycrystalline structure structure diode element according to claim 1, wherein any one of the 2N crystal groups can be replaced by another parallel new crystal group and connected in series with other crystal groups, Forms an element including a series, parallel, and multi-segment double-series crystal group structure.         The multi-segment dual tandem polycrystalline structure structure diode device according to claim 1, wherein each of the 2N crystal groups can be vertically adjusted or expanded according to electrical requirements, and The number of layers can be the same, or different layer numbers or different types of combinations can be made according to different electrical requirements. When the number of layers between different crystal groups is different, the difference in the thickness of the crystal group is replaced by copper particles of the corresponding thickness.         The multi-segment dual tandem polycrystalline structure diode device described in claim 3, wherein if the various types of combinations mentioned above are limited due to package size requirements, the actual electrical requirements do not require enough 2N crystal group combinations Insufficient crystal groups can be replaced by copper particles of corresponding thickness.         A multi-segment dual tandem polycrystalline structure diode device includes 2N crystal groups, N lower guide plates, (N-1) upper guide plates, and is placed above the first and 2N group crystals. The 2 electrode plates, where N ≧ 1, and its construction method is as follows: 1) N lower guide plates are placed on the designed jig; 2) The 2N crystal groups are sequentially placed according to the electrical characteristics plan On the two ends of the N lower guide plates: The N lower guide plates respectively connect 2N crystal groups from the first group with the bottom of every two crystal groups with tin; 3) the (N-1) upper guide plates Placed on the top surface of the corresponding crystal group: the (N-1) upper guides are placed on top of the (2N-2) crystal group excluding the first and 2N crystal groups, and starting from the second group The top of every two crystal groups is connected by tin material; 4) the two electrode plates are connected with the top electrode surface above the first crystal group and the 2N crystal group by tin material respectively; 5) the first electrode and the second electrode Exposed, the other parts and their periphery are filled with transparent or opaque insulating substances.