TWI716680B - Multi-stage dual-series polycrystalline group structure diode element - Google Patents

Multi-stage dual-series polycrystalline group structure diode element Download PDF

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TWI716680B
TWI716680B TW107112928A TW107112928A TWI716680B TW I716680 B TWI716680 B TW I716680B TW 107112928 A TW107112928 A TW 107112928A TW 107112928 A TW107112928 A TW 107112928A TW I716680 B TWI716680 B TW I716680B
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TW201944600A (en
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林慧敏
吳文湖
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吳文湖
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Abstract

一種多段式雙串聯多晶組結構二極體元件，係包含2N個晶組，前(第1晶組)後(第2N組)二晶組之頂面分別配置一電極板為元件之第一、第二電極，N個下導板將2N個晶組之底面兩兩連接，(N-1)個上導板將前後二晶組除外的(2N-2)個晶組之頂面兩兩連接而形成一完整二極體元件結構，此元件結構除第一、第二電極之電極板外之晶組間及其外圍均填充絕緣物質；元件之構裝可視電性需求任意地調整晶組數量，且各晶組之層數可以不同，特別適合需求小體積、高功率及或高耐壓整流二極體或突波抑制保護型二極體等元件之構裝。 A multi-stage dual-series polycrystalline group structure diode element, which contains 2N crystal groups. The top surface of the front (first crystal group) and the back (2N group) two crystal groups are respectively equipped with an electrode plate as the first element , The second electrode, N lower guide plates connect the bottom surfaces of the 2N crystal groups in pairs, (N-1) upper guide plates connect the top surfaces of the (2N-2) crystal groups in pairs except the front and rear two crystal groups Connected to form a complete diode element structure. In this element structure, except for the electrode plates of the first and second electrodes, the crystal groups and the periphery are filled with insulating materials; the structure of the element can be adjusted according to electrical requirements. The number and the number of layers of each crystal group can be different, which is especially suitable for the construction of components that require small size, high power and or high voltage rectifier diodes or surge suppression protection diodes.

Description

多段式雙串聯多晶組結構二極體元件 Multi-stage dual-series polycrystalline group structure diode element

本發明為多段式雙串聯多晶組結構二極體元件，技術內容涉及將2N個晶組分別以相應個上、下導板將各晶組導接構裝成一二極體元件，讓該二極體元件具備高功率、高耐壓、並可彈性組裝及縮小體積之特性。 The present invention is a multi-stage dual-series polycrystalline group structure diode element. The technical content relates to 2N crystal groups using corresponding upper and lower guide plates to connect each crystal group into a diode element. The diode element has the characteristics of high power, high withstand voltage, flexible assembly and reduced size.

傳統二極體之封裝大致分為軸式、SMD、SOD等，一般高壓高功率元件仍以軸式封裝為主，SMD封裝則較適一般功率元件，而SOD等較小封裝則較適低功率低壓元件，這些封裝方法已為世人所熟悉，在此不再贅述；然其軸式封裝最大問題即在其元件主體太長或太高，適插件式裝配製程，並不適用於小型化表面黏著裝配製程及要求。 Traditional diode packages are roughly divided into shaft type, SMD, SOD, etc. Generally high-voltage and high-power components are still mainly shaft-type packages, SMD packages are more suitable for general power components, and smaller packages such as SOD are more suitable for low power For low-voltage components, these packaging methods are already familiar to the world, so I won’t repeat them here. However, the biggest problem with the axial package is that the component body is too long or too high. It is suitable for the plug-in assembly process and is not suitable for miniaturized surface adhesion. Assembly process and requirements.

近年，在表面黏著型元件製作上也有其他具特色之製法，例如：將欲構裝元件所需之線路或導接電極分別預附於上下二電路板(基板)，再將二電路板與所欲組裝之晶粒上下接合，並藉由切割作業將各單元元件切開後再將不同電極導接到同一面上，此構裝方式稍嫌繁複，且一般只適用於小尺寸小功率元件上；另有利用薄膜方式在基板上製作發光二極體元件，再將基板上的元件與另一預置組合線路之基板接合，於接合後再將原基板去除，以使元件之一面電極外露，以利後續之電極導接作業，此種製程須結合晶圓製造，雙基板與單機板互換及雙重導接等繁複工藝，雖適合發光二極體之製造，但無法滿 足非發光功率元件之組裝需求，與本發明直接採用(2N-1)個上下導板構裝方式大不相同，且因其構裝方式不能多疊層式構裝，對一般功率二極體元件之構裝仍嫌彈性不足。 In recent years, there are other unique manufacturing methods in the production of surface-mount components. For example, pre-attach the wiring or conductive electrodes required for the component to the upper and lower circuit boards (substrates), and then connect the two circuit boards to the The die to be assembled is joined up and down, and each unit element is cut through the cutting operation, and then the different electrodes are connected to the same surface. This assembly method is a bit complicated and is generally only suitable for small-size and low-power components; In addition, a thin film method is used to fabricate light-emitting diode components on the substrate, and then the components on the substrate are bonded to another substrate with a pre-combined circuit. After bonding, the original substrate is removed to expose the electrode on one side of the component. To facilitate the subsequent electrode lead operation, this kind of process must be combined with complicated processes such as wafer manufacturing, dual substrate and single board interchange, and double lead connection. Although it is suitable for the manufacture of light-emitting diodes, it cannot meet the requirements. The assembly requirements for non-luminous power components are quite different from the direct use of (2N-1) upper and lower guide plates in the present invention, and because of its assembly method, it cannot be assembled in multiple layers. The assembly of the components still lacks flexibility.

再以日本發明專利「昭50-13492雙方向定電壓型半導體裝置」為例，其發明旨意在利用單向二極體反向並聯達到雙向導通效果，但此種封裝方式因採全單向反向並聯，其體積雖會比全單向單串式縮小，但放眼今日仍然偏大，與本發明之直接以雙向晶組做多段式雙串連組合方式明顯不同。 Take the Japanese invention patent "Sho 50-13492 Bidirectional Constant Voltage Type Semiconductor Device" as an example. The purpose of the invention is to use unidirectional diodes in reverse parallel connection to achieve a bidirectional conduction effect. However, this packaging method uses a full unidirectional reverse Although the volume of the parallel parallel connection is smaller than that of the full unidirectional single serial type, it is still larger today, which is obviously different from the multi-stage double serial combination method of the present invention directly using the bidirectional crystal group.

綜觀上述及其他相關發明之作法，無論元件結構是雙料片、雙PC板、或單料片(基板)加clip或其他導電層等組合方式，均無法同時滿足彈性組裝、高壓、高功率、小體積、降成本五位一體之需求；本發明正是為滿足此需求而設計的。 Looking at the above and other related inventions, no matter whether the component structure is a dual-chip, dual-PC board, or a combination of single-material (substrate) plus clip or other conductive layers, they cannot simultaneously meet the requirements of flexible assembly, high voltage, high power, and small size. The five-in-one demand for volume and cost reduction; the present invention is designed to meet this demand.

本發明之目的在於提供一種多段式雙串聯多晶組結構二極體元件(所謂多段式雙串聯係指本發明之構裝模式中之各晶組內的組成晶粒以串聯方式組合，且在各晶組間採多段式串聯方式，並藉由N個下導板與(N-1)上導板做連接組合之謂)，其構裝方式不但能滿足高壓、高功率、縮小體積、降低成本之需求，還可以視電氣特性需求彈性地擴充晶組數量及類別，各晶組之層數可依電性需求設計成相同層數或不相同層數組合，其組合之極向方向不限，亦可視空間需求調整封裝組數，適合一般整流二極體或保護型二極體等元件之組合封裝，更適合高功率及或高耐壓整流二極體或突波抑制保護型二極體等元件之構裝。 The purpose of the present invention is to provide a multi-stage double series polycrystalline group structure diode element (the so-called multi-stage double series connection means that the constituent crystal grains in each crystal group in the construction mode of the present invention are combined in series, and in A multi-stage series connection method is adopted between each crystal group, and N lower guide plates and (N-1) upper guide plates are used as a connection combination). The construction method can not only meet the requirements of high voltage, high power, small size, and low For cost requirements, the number and types of crystal groups can be flexibly expanded according to electrical characteristics. The number of layers of each crystal group can be designed to be the same or different combinations according to electrical requirements, and the combination of polar directions is not limited. , The number of package groups can also be adjusted according to space requirements. It is suitable for combination packaging of general rectifier diodes or protective diodes, and more suitable for high power and or high voltage rectifier diodes or surge suppression protective diodes. The construction of components.

為簡化第一及第二電極之製作，並直接將其建置在元件之同一面或同一側，本發明之晶組數採偶數構裝，即2N組，N≧1；另為簡化本發明之實施方式之示例，將以雙層四晶組以下之組合作說明為主，不同電氣特性之晶組彈性組合則將只作簡要說明(雙層四晶組以上之組合則依示例類推之)。 In order to simplify the production of the first and second electrodes and directly build them on the same surface or the same side of the element, the number of crystal groups of the present invention adopts even-numbered structures, that is, 2N groups, N≧1; in addition, to simplify the present invention The example of the implementation mode will focus on the description of the combination of the double-layer tetra-crystal group and the following, and the elastic combination of the crystal group with different electrical characteristics will only be briefly explained (the combination of the double-layer tetra-crystal group and above is analogous to the example) .

本發明多段式雙串聯多晶組結構二極體元件，係包含2N個晶組，N個連接各晶組底面之下導板，(N-1)個連接各晶組頂面的上導板，二置於第1個與第2N個晶組上方之電極板(銅板或錫台等，下同省略標註)，及用於固化並保護元件結構之絕緣物質，其中N≧1；其主要特徵為：2N個晶組依電氣特性設計需求依序排列；該N個下導板分別將2N個晶組自第1組起每兩晶組之底面以錫材連接(即1、2組連接，3、4組連接，......,(2N-1)、2N組連接)；該(N-1)個上導板分別置於扣除第1與第2N晶組外的(2N-2)個晶組之頂面，並自第2組起每兩晶組之頂面以錫材連接(即2、3組連接，4、5組連接，......，(2N-2)、(2N-1)組連接)；二電極板分別以錫材與第1個晶組及第2N個晶組之上方頂面電極面連結，為元件與外部電路連接的第一電極及第二電極；第一電極及第二電極外露外，其餘各部之間及其外圍均填充透明或不透明絕緣物質。 The multi-stage dual-series polycrystalline group structure diode element of the present invention includes 2N crystal groups, N connecting the bottom guide plates of each crystal group, and (N-1) upper guide plates connecting the top surface of each crystal group , Two electrode plates (copper plate or tin platform, etc., omitted below) placed above the first and 2N crystal groups, and the insulating material used to solidify and protect the component structure, where N≧1; its main features It is: 2N crystal groups are arranged in order according to the design requirements of electrical characteristics; the N lower guide plates respectively connect the 2N crystal groups from the first group and the bottom surfaces of every two crystal groups with tin material (that is, the 1, 2 groups are connected, 3, 4 sets of connections,......, (2N-1), 2N sets of connections); the (N-1) upper guide plates are respectively placed outside the (2N- 2) The top surfaces of the crystal groups, and the top surfaces of every two crystal groups from the second group are connected by tin material (ie 2, 3 groups are connected, 4, 5 groups are connected, ..., (2N- 2), (2N-1) group connection); the two electrode plates are respectively connected with the top electrode surface of the first crystal group and the 2N crystal group with tin materials, which are the first electrode and The second electrode; the first electrode and the second electrode are exposed, and the other parts and the periphery are filled with transparent or opaque insulating materials.

其構裝程序如下：1)將N個下導板置於所設計之製具上；2)將該2N個晶組依電氣特性規劃依序置於該N個下導板兩端上： 該N個下導板分別將2N個晶組自第1組起每兩晶組之底面以錫材連接(即1、2組連接，3、4組連接，......，(2N-1)、2N組連接)；3)將(N-1)個上導板置於對應之晶組頂面：於該(N-1)個上導板分別置於扣除第1與第2N晶組外的(2N-2)個晶組之頂面，並自第2組起每兩晶組之頂面以錫材連接(即2、3組連接，4、5組連接，......，(2N-2)、(2N-1)組連接)；4)將二電極板分別以錫材與第1個晶組及第2N個晶組之上方頂面電極面連結；5)將第一電極及第二電極外露外，其餘各部之間及其外圍均填充透明或不透明絕緣物質。 The assembly procedure is as follows: 1) Place N lower guide plates on the designed fixture; 2) Place the 2N crystal groups on both ends of the N lower guide plates in sequence according to the electrical characteristics planning: The N lower guide plates respectively connect the 2N crystal groups from the first group to the bottom surfaces of every two crystal groups with tin material (ie 1, 2 groups, 3, 4 groups, ..., (2N -1), 2N group connection); 3) Place (N-1) upper guide plates on the top surface of the corresponding crystal group: Place the (N-1) upper guide plates on the first and second N The top surface of the (2N-2) crystal groups outside the crystal group, and the top surfaces of every two crystal groups from the second group are connected by tin material (ie 2, 3 groups are connected, 4, 5 groups are connected,... ..., (2N-2), (2N-1) group connection); 4) Connect the two electrode plates with tin materials to the top electrode surfaces of the first crystal group and the top surface of the 2N crystal group respectively; 5 ) The first electrode and the second electrode are exposed, and transparent or opaque insulating materials are filled between the remaining parts and the periphery.

實施時，該2N個晶組之每一晶組的電性類別可以是單一性(單一類別、全單向或全雙向)；也可以每一晶組內組成之個別晶粒是多類別混合組合，且可以全同向組合，也可以正、反向交錯組合及將單向功能晶組與雙向功能晶組組合，所有組合結構均為多段式串聯結構；該2N個晶組之每個晶組均可依電性需求做垂直向調整或擴充層數，且各晶組之層數可以相同，也可依電性需求不同做不同層數及或不同類別組合；例如以N=1雙晶組為例，它除可(1,1)、(2,2)、(3,3)、(4,4)、...(數字大小代表疊層數，一組有兩個數字代表有兩個晶組)組合外，還可做(1,0)、(2,0)、...(2,1)、(3,2)、(4,3)、...等組合；N=2四晶組，則除(1,1,1,1)、(2,2,2,2)、(3,3,3,3)、(4,4,4,4)、...(數字代表疊層數，一組四個數字代表四晶組)組合外，還可做(1,1,1,0)、(2,2.2.0)、...(2,2,2,1)、(2,2,1,1)、(2,1,1,1)、(3,3,3,2)、(3,3,2,2)、(3,2,2,2)、(4,4,4,4)、 (4,4,4,3)、(4,4,3,3)、(4,3,3,3)、...等組合，依此類推；而上列之各種組合組裝中，只需在較少疊層之晶組上加上相對厚度之銅粒等導電金屬即可輕易組裝，更是本發明最具彈性之特色。 In implementation, the electrical type of each crystal group of the 2N crystal groups can be unitary (single type, all one-way or all two-way); it can also be a multi-type mixed combination of individual crystal grains in each crystal group , And can be combined in the same direction, and can also be combined in forward and reverse staggered combinations, and the unidirectional functional crystal group and the bidirectional functional crystal group are combined. All the combined structures are multi-stage series structure; each crystal group of the 2N crystal groups The number of layers can be adjusted vertically or expanded according to electrical requirements, and the number of layers of each crystal group can be the same, or different layers and or different types of combinations can be made according to different electrical requirements; for example, N=1 double crystal group As an example, it can be divided into (1,1), (2,2), (3,3), (4,4), ... (the size of the number represents the number of layers, and a group of two numbers means that there are two In addition to the combination of individual crystal groups, (1,0), (2,0),...(2,1), (3,2), (4,3),... and other combinations can also be used; N =2 tetra crystal group, then divide (1,1,1,1), (2,2,2,2), (3,3,3,3), (4,4,4,4), .. .(The number represents the number of stacks, a group of four numbers represents the four crystal group) In addition to the combination, (1,1,1,0), (2,2.2.0),...(2,2, 2,1), (2,2,1,1), (2,1,1,1), (3,3,3,2), (3,3,2,2), (3,2, 2,2), (4,4,4,4), (4,4,4,3), (4,4,3,3), (4,3,3,3), and so on, and so on; and in the various combinations listed above, only It can be easily assembled by adding relatively thick copper particles and other conductive metals on the crystal group with less laminated layers, which is the most flexible feature of the present invention.

上述組合中如因封裝尺寸(package)限制，實際電性需求並不需要足2N個晶組組合時，則不足之晶組可以相應厚度之導電金屬(如銅粒等)取代之即可，例如於上述(2,2,2,0)中之0疊層晶組的相應位置改以相應厚度之導電金屬(如銅粒等)代之。 In the above combinations, if the actual electrical requirements do not require sufficient 2N crystal group combinations due to package size limitations, the insufficient crystal groups can be replaced by conductive metals of corresponding thickness (such as copper particles, etc.), for example In the above (2,2,2,0), the corresponding position of the 0 laminated crystal group is replaced by a conductive metal (such as copper particles, etc.) of corresponding thickness.

由上述之多段式雙串聯多晶組結構之構裝方式尚可推演並運用於將至少一並聯組合之晶組(例如將二晶組並聯後視為另一新晶組)與至少一單晶組之串聯結構上，由此所構裝之元件包含了多個單晶組之內部串聯、至少二單晶組之並聯而組成一新晶組、及此一新晶組與至少一單晶組之多段式串聯的串並串多段式雙串聯多晶組結構；參考第十八圖所示，餘類推。 The construction method of the above-mentioned multi-stage double series polycrystalline group structure can be deduced and applied to at least one crystal group of parallel combination (for example, two crystal groups are connected in parallel as another new crystal group) and at least one single crystal In terms of the series structure of the group, the components constructed thereby include the internal series connection of multiple single crystal groups and the parallel connection of at least two single crystal groups to form a new crystal group, and this new crystal group and at least one single crystal group The multi-stage series-parallel-series multi-stage dual-series polycrystalline group structure; refer to Figure 18, and so on.

依本發明所構裝之元件具備以下特色： The components constructed according to the present invention have the following features:

1)採2N個晶組構裝，確保元件之二電極在同一面。 1) Adopt 2N crystal assembly to ensure that the two electrodes of the element are on the same surface.

2)因採用了(2N-1)個上下導板，可更有效散熱，強化元件特性，適合高功率、高電壓之整流/保護型等二極體元件之構裝。 2) Due to the use of (2N-1) upper and lower guide plates, it can more effectively dissipate heat and strengthen the component characteristics, which is suitable for the construction of high-power, high-voltage rectifier/protective diode components.

3)因雙串聯多晶組結構又直接以兩端晶組之頂面加置對外導接電極板，除可簡化製程，並可縮小元件之體積。 3) Because the dual-series polycrystalline group structure is directly connected to the top surface of the two ends of the crystal group, external conductive electrode plates are directly added, which can simplify the manufacturing process and reduce the volume of the component.

4)各元件之晶組數及各晶組之層數可依各元件之電性需求及其封裝Package之要求做彈性組裝設計。 4) The number of crystal groups of each element and the number of layers of each crystal group can be flexibly assembled according to the electrical requirements of each element and the requirements of its packaging package.

5)各元件之各晶組間可依電性需求做各種不同極向組合，亦可於各晶組中做不同類別晶粒與不同極向組合。 5) Each crystal group of each element can be combined with different polar orientations according to electrical requirements, and different types of die and different polar combinations can also be made in each crystal group.

6)相對於一般構裝製程，可有效降低成本。 6) Compared with the general assembly process, it can effectively reduce the cost.

配合上述說明，以下列舉出本創作中N≦2，層數≦2之部分實施例，並配合圖式說明於後。 In conjunction with the above description, the following lists some examples of this creation with N≦2 and the number of layers≦2, and are described in conjunction with the drawings.

10:第一晶組 10: The first crystal group

10A:新第一晶組 10A: New first crystal group

20:第2N晶組 20: 2N crystal group

11:錫材 11: Tin material

12、22:電極板 12, 22: Electrode plate

30:下導板 30: Lower guide plate

31:第一下導板 31: The first lower guide

32:第二下導板 32: The second lower guide

33:上導板 33: Upper guide plate

40:絕緣物質 40: Insulating substance

50:第一電極 50: first electrode

60:第二電極 60: second electrode

80:第三晶組 80: The third crystal group

90:第四晶組 90: The fourth crystal group

100:任一晶組 100: any crystal group

300:銅粒 300: Copper grain

第一圖：本發明第一實施例採用單向雙晶組(1,1)的結構示意圖。 The first figure: the first embodiment of the present invention adopts the structure diagram of the unidirectional twin crystal group (1, 1).

第二圖：本發明採用單向雙晶組雙疊層(2,2)的結構示意圖。 The second figure: the present invention adopts the structure diagram of the unidirectional double crystal group double stack (2, 2).

第三圖：本發明採用單向四晶組(1,1,1,1)的結構示意圖。 The third figure: the present invention adopts the structure diagram of the unidirectional four-crystal group (1,1,1,1).

第四圖：本發明採用單向四晶組雙疊層(2,2,2,2)的結構示意圖。 The fourth figure: the present invention adopts the structure diagram of the unidirectional four-crystal group double stack (2,2,2,2).

第五圖：本發明第二實施例採用雙向雙晶組(1,1)的結構示意圖。 Figure 5: A schematic diagram of the structure of the bidirectional twin crystal group (1, 1) used in the second embodiment of the present invention.

第六圖：本發明採用雙向雙晶組雙疊層(2,2)的結構示意圖。 Figure 6: The present invention adopts the structure diagram of the bidirectional double crystal group double stack (2, 2).

第七圖：本發明採用雙向四晶組(1,1,1,1)的結構示意圖。 Figure 7: The present invention adopts a schematic structural diagram of a bidirectional tetracrystalline group (1, 1, 1, 1).

第八圖：本發明採用雙向四晶組雙疊層(2,2,2,2)的結構示意圖。 Figure 8: The present invention adopts a schematic structural diagram of a bidirectional four-crystal group double-stacked layer (2, 2, 2, 2).

第九圖：本發明四晶組方型排列方式俯視示意圖。 Figure 9: A schematic top view of the square arrangement of the four crystal groups of the present invention.

第十圖：本發明中雙晶組(2,1)組合中第二晶組少一層並以銅粒取代的結構示意圖。 Figure 10: The structure diagram of the second crystal group in the combination of the twin crystal group (2,1) in the present invention with one less layer and replaced with copper particles.

第十一圖：本發明中四晶組(2,2,2,1)組合中第四晶組少一層並以銅粒取代的結構示意圖。 The eleventh figure: the structure diagram of the fourth crystal group in the combination of the four crystal groups (2,2,2,1) in the present invention with one less layer and replaced with copper particles.

第十二圖：本發明中四晶組(2,2,1,1)組合中第三與第四晶組各少一層並各以銅粒取代的結構示意圖。 Figure 12: A schematic diagram of the structure of the third and fourth crystal groups in the combination of the four crystal groups (2, 2, 1, 1) in the present invention, each with one less layer and each replaced by copper particles.

第十三圖：本發明中四晶組(2,1,1,2)組合中第二與第三晶組各少一層並各以銅粒取代的結構示意圖。 Figure 13: The structure diagram of the second and third crystal groups in the combination of the four crystal groups (2, 1, 1, 2) of the present invention, each with one less layer and each replaced by copper particles.

第十四圖：本發明中四晶組(1,1,1,0)組合中第四晶組為0層並以銅粒取代的結構示意圖。 Figure 14: A schematic diagram of the structure of the fourth crystal group in the combination of the four crystal groups (1,1,1,0) in the present invention is 0 layer and replaced with copper particles.

第十五圖：本發明中四晶組(2,2,2,0)組合中第四晶組為0層並以雙層銅粒取代的結構示意圖。 Figure 15: The structure diagram of the fourth crystal group in the combination of the four crystal groups (2,2,2,0) in the present invention is 0 layer and replaced by double copper particles.

第十六圖：本發明採用不同極向之雙晶組(2,2)組合的結構示意圖。 Figure 16: The structure diagram of the present invention adopting the combination of twin crystal groups (2, 2) with different polar directions.

第十七圖：本發明採用不同極向之雙層四晶組(2,2,2,2)組合的結構示意圖。 Figure 17: The present invention adopts the structure diagram of the combination of double-layer tetracrystalline groups (2, 2, 2, 2) with different polar directions.

第十八圖：本發明將二雙層晶組並聯後與另一雙層晶組串聯((2,2),2)組合的結構示意圖。 Figure 18: The structure diagram of the present invention combining two double-layer crystal groups in parallel with another double-layer crystal group in series ((2, 2), 2).

如第一圖至第四圖所示，係本發明多段式雙串聯多段式多晶組結構之功率型等二極體元件，N≦2，層數≦2之示例，第一圖：(1,1)為N=1，2N=2，層數=1，單向雙晶組之構裝，係將一第一晶組10以及一第二(2N=2，下同省略標註)晶組20配置在一下導板30之上；其中該第一晶組10及第二晶組20底面分別與一下導板30以錫材11電性連接，頂面分別設置有一電極板12、22，且第一晶組10及第二晶組20的外周圍以及彼此之間填充有絕緣物質40，使第一晶組10及第二晶組20頂面的電極板12、22彼此絕緣隔離，以供作外部電路連接的第一電極50及第二電極60，如此，一完整之二極體元件之迴路與構裝即告完成；本實施例中的二個晶組之電性可以是相同類型亦可為不相同類型。 As shown in the first to fourth figures, it is an example of the power type diode element of the multi-stage dual-series multi-stage polycrystalline group structure of the present invention, N≦2, and the number of layers≦2. The first picture: (1 ,1) is N=1, 2N=2, the number of layers=1, the structure of the unidirectional twin crystal group is a first crystal group 10 and a second (2N=2, the same as omitted below) crystal group 20 is disposed on the lower guide plate 30; wherein the bottom surfaces of the first crystal group 10 and the second crystal group 20 are electrically connected to the lower guide plate 30 by tin material 11, and the top surfaces are respectively provided with electrode plates 12, 22, and The outer periphery of the first crystal group 10 and the second crystal group 20 and between each other are filled with an insulating material 40, so that the electrode plates 12, 22 on the top surfaces of the first crystal group 10 and the second crystal group 20 are insulated from each other for The first electrode 50 and the second electrode 60 are connected to the external circuit, so that the circuit and structure of a complete diode element are completed; the electrical properties of the two crystal groups in this embodiment can be the same type or Can be of different types.

第二圖所示：(2,2)為N=1，2N=2，層數=2，單向雙晶組之構裝例，第一晶組10及第二晶組20分別為單向雙疊層晶組，頂面分別與一電極板 12、22以錫材11連接，且彼此底面的電氣連接面為不同極向，分別與一下導板30以錫材11連接，並將第一、第二電極50、60除外之各晶組間及其外圍填入絕緣物質40，一完整二極體元件迴路與構裝即完成。 As shown in the second figure: (2,2) is N=1, 2N=2, the number of layers=2, the structure of the unidirectional twin crystal group, the first crystal group 10 and the second crystal group 20 are unidirectional respectively Double laminated crystal group, top surface and one electrode plate respectively 12 and 22 are connected by tin material 11, and the electrical connection surfaces on the bottom of each other are in different polar directions. They are respectively connected to the lower guide plate 30 by tin material 11, and each crystal group except the first and second electrodes 50 and 60 The insulating material 40 is filled in and its periphery, and a complete circuit and structure of the diode element is completed.

如第三圖所示：(1,1,1,1)為N=2，2N=4，層數=1，單向四晶組單向構裝，第一晶組10與第二晶組80之底面分別與第一下導板31以錫材11連接；第三晶組90與第四晶組20底面分別與該第二下導板32以錫材連接；第二晶組80與第三晶組90之頂面之間有一上導板33以錫材11連接；第一晶組10與第四晶組(2N=4，下同省略標註)20之頂面各置一電極板12、22；再將第一、第二電極50、60除外之各晶組間及其外圍填入絕緣物質40後，即完成一完整二極體元件迴路與構裝。 As shown in the third figure: (1,1,1,1) is N=2, 2N=4, number of layers=1, unidirectional four-crystal group unidirectional assembly, first crystal group 10 and second crystal group The bottom surface of 80 is connected to the first lower guide plate 31 by tin material 11; the bottom surfaces of the third crystal group 90 and the fourth crystal group 20 are connected to the second lower guide plate 32 by tin material; the second crystal group 80 is connected to the There is an upper guide plate 33 between the top surfaces of the three crystal groups 90 connected with the tin material 11; the first crystal group 10 and the fourth crystal group (2N=4, the same as omitted below) 20 have an electrode plate 12 on the top surfaces. , 22; After filling the insulating material 40 between the first and second electrodes 50, 60 and the periphery of each crystal group, a complete diode element circuit and assembly are completed.

如第四圖所示(2,2,2,2)為N=2，層數=2，2N=4，為單向雙層四晶組之單向構裝實施例，第一晶組10及第二晶組80底面與第一下導板31以錫材11連接；第二下導板32與第三晶組90及第四晶組20底面以錫材11連接；而上導板33則跨接於第二晶組80與第三晶組90的頂面之間並以錫材11連接；第一晶組10及第四晶組20之頂面各置一電極板12、22；將第一、第二電極50、60除外之晶組間及其外圍再填入絕緣物質40，即完成一完整二極體元件迴路與構裝。 As shown in the fourth figure (2,2,2,2) is N=2, the number of layers=2, 2N=4, which is a unidirectional configuration embodiment of the unidirectional double-layer four-crystal group, the first crystal group 10 And the bottom surface of the second crystal group 80 and the first lower guide plate 31 are connected by tin material 11; the second lower guide plate 32 is connected with the bottom surfaces of the third crystal group 90 and the fourth crystal group 20 by tin material 11; and the upper guide plate 33 It is connected across the top surfaces of the second crystal group 80 and the third crystal group 90 and connected by tin material 11; the top surfaces of the first crystal group 10 and the fourth crystal group 20 are each provided with an electrode plate 12, 22; Fill the gap between the first and second electrodes 50, 60 and the periphery of the crystal group with the insulating material 40 to complete a complete diode element circuit and assembly.

第五圖到第八圖所示為全部晶組皆採用雙向電性功能的晶組為例，與第一到第四圖所示的實施例不同處，在於全部是雙向電性功能的晶組構裝成一具完全雙向功能之二極體元件，因所有晶組及各晶組內的各個晶粒均為雙向，所以組裝時無須分辨各晶粒或晶組之極向，更為簡易；例如： Figures 5 to 8 show an example of all the crystal groups adopting bidirectional electrical functions. The difference from the embodiment shown in the first to fourth figures is that all crystal groups are bidirectional electrical functions. It is assembled into a diode element with full bidirectional function. Since all the crystal groups and the individual crystal grains in each crystal group are bidirectional, there is no need to distinguish the polar orientation of each die or crystal group during assembly, which is easier; for example, :

第五圖對應第一圖，其中第五圖(1,1)，N=1，2N=2，雙向單層雙晶組，除第一晶組10及第二(2N=2)晶組20底面及頂面均為相同極向外，其第一晶組10及第二(2N=2)晶組20頂面與二電極板12、22之連接方式及第一 晶組10及第二(2N=2)晶組20之底面與下導板30的連接方式均與第一圖例相同。 The fifth picture corresponds to the first picture. The fifth picture (1,1), N=1, 2N=2, bidirectional single-layer twin crystal group, except for the first crystal group 10 and the second (2N=2) crystal group 20 The bottom surface and the top surface are the same pole outwards, and the connection between the top surface of the first crystal group 10 and the second (2N=2) crystal group 20 and the two electrode plates 12, 22 and the first The connection mode of the bottom surface of the crystal group 10 and the second (2N=2) crystal group 20 and the lower guide plate 30 is the same as the first illustration.

第六圖對應第二圖，其中除第一晶組10及第二(2N=2)晶組20底面及頂面均為相同極向，第一晶組10及第二(2N=2)晶組20頂面與二電極板12、22之連接方式及第一晶組10及第二(2N=2)晶組20之底面與下導板30的連接方式均與第二圖例相同。 The sixth figure corresponds to the second figure, except that the bottom and top surfaces of the first crystal group 10 and the second (2N=2) crystal group 20 have the same polar orientation, and the first crystal group 10 and the second (2N=2) crystal group The connection between the top surface of the group 20 and the two electrode plates 12 and 22 and the connection between the bottom surface of the first crystal group 10 and the second (2N=2) crystal group 20 and the lower guide plate 30 are the same as in the second illustration.

第七圖以及第八圖則對應第三及第四圖，除各晶組均為雙向晶組之不同外，其二電極板12、22分別與第一晶組10、第四晶組(2N=4)20的頂面連接、二下導板31、32與各對應晶組(第一晶組10與第二晶組80、第三晶組90與第四晶組20)之底面連接及一上導板33與相應之晶組(第二晶組80與第三晶組90)頂面連接之構裝方法均相同，在此不再贅述。 The seventh and eighth pictures correspond to the third and fourth pictures. Except for the difference that each crystal group is a bidirectional crystal group, the two electrode plates 12 and 22 are respectively the same as the first crystal group 10 and the fourth crystal group (2N =4) The top surface of 20 is connected, the two lower guide plates 31, 32 are connected to the bottom surface of each corresponding crystal group (the first crystal group 10 and the second crystal group 80, the third crystal group 90 and the fourth crystal group 20) and The assembly method for connecting an upper guide plate 33 to the top surface of the corresponding crystal group (the second crystal group 80 and the third crystal group 90) is the same, and will not be repeated here.

第九圖所示為N=2，2N=4之方形構裝俯視示意圖，第一晶組10、第二晶組80、第三晶組90及第四(2N=4)晶組20以方形配置，第一、二電極50、60之製作、各晶組之底面與各下導板31、32連接及各晶組之頂面與各上導板33連接之方式與上述第七圖例相同，因採取方形配置方式，故將第一、第二電極50、60並列在元件之同一側；依此類推，只要使2N個晶組之各晶組間形成一個串聯迴路之構裝即可。 The ninth figure shows the top view of the square structure with N=2 and 2N=4. The first crystal group 10, the second crystal group 80, the third crystal group 90 and the fourth (2N=4) crystal group 20 are square The configuration, the production of the first and second electrodes 50, 60, the connection of the bottom surface of each crystal group with the lower guide plates 31, 32, and the connection of the top surface of each crystal group with each upper guide plate 33 are the same as the seventh illustration above. Due to the square configuration, the first and second electrodes 50 and 60 are arranged on the same side of the device; and so on, as long as the 2N crystal groups form a series circuit configuration between each crystal group.

第十圖到第十三圖所示均為存有不同層數晶組之組合的示例：第十圖與第十一圖為各元件組合晶組中各有一組少一層晶粒之示例，其中少一層之晶粒位置均各以一銅粒300取代之；另，第十二圖與第十三圖為組成晶組中各有二個晶組各少一層晶粒，而各以一銅粒300取代之示例；餘依此類推。 Figures 10 to 13 show examples of combinations with different layers of crystal groups: Figures 10 and 11 are examples of each element combination crystal group with one group of less than one die. The positions of the crystal grains with one less layer are each replaced by a copper grain 300; in addition, the twelfth and thirteenth figures show that each of the two crystal groups in the composition crystal group has one less crystal grain, and each has one copper grain 300 replaced example; I and so on.

第十四圖、第十五圖為不足2N個晶組之示例，圖中為三個晶組與一個由銅粒300組成用以取代第四晶組(2N=4)20之組合(1,1,1,0)、(2,2,2,0)，構裝方式與前述例相同，不再贅述；餘依此類推。 The fourteenth and fifteenth pictures are examples of less than 2N crystal groups. The figure shows the combination of three crystal groups and one copper grain 300 to replace the fourth crystal group (2N=4) 20 (1, 1,1,0), (2,2,2,0), the construction method is the same as the previous example, so I won't repeat it; the rest can be deduced by analogy.

第十六圖、第十七圖所示為不同極向晶組組合(2,2)、(2,2,2,2)之示例，構裝方式與前述例相同，不再贅述；餘依此類推。 The sixteenth and seventeenth figures show examples of different polar orientation crystal group combinations (2,2), (2,2,2,2). The construction method is the same as the previous example, and will not be repeated; Yu Yi And so on.

第十八圖為一第一晶組10與任一晶組100並聯成一新第一晶組10A再與一第二晶組(2N=2)20串聯((2,2),2)之示例((2,2)代表由二雙層晶組並聯所形成之一新第一晶組10A)：二雙層晶組先並聯(2,2)成一新第一晶組10A後再與另一雙層第二晶組20所構裝的((2,2),2)元件，其構裝方式與前述例相同，不再贅述；餘依此類推。 The eighteenth figure is an example of a first crystal group 10 in parallel with any crystal group 100 to form a new first crystal group 10A and then a second crystal group (2N=2) 20 in series (( 2 , 2), 2) (( 2,2 ) represents a new first crystal group 10A formed by the parallel connection of two double-layer crystal groups): The two double-layer crystal groups are connected in parallel ( 2, 2 ) to form a new first crystal group 10A and then with another The (( 2,2 ),2) elements constructed by the double-layer second crystal group 20 are constructed in the same manner as the previous examples, and will not be repeated here; the rest can be deduced by analogy.

如同第一圖至第四圖示實施例所述，上述第五圖至第十八圖示實施例，在組裝完成後均需於各晶組間及其外圍填充絕緣物質40，並將第一晶組10及第2N晶組20之電極板12、22裸露在絕緣物質40的外部，做為與外部電路連接的第一電極50及第二電極60。 As described in the first to fourth illustrated embodiments, in the fifth to eighteenth illustrated embodiments, after the assembly is completed, it is necessary to fill the insulating material 40 between and around each crystal group, and place the first The electrode plates 12 and 22 of the crystal group 10 and the second N crystal group 20 are exposed to the outside of the insulating material 40 and serve as the first electrode 50 and the second electrode 60 connected to an external circuit.

以上實施例說明及圖式所示，僅為本發明之部分實施例，並非以此侷限本發明之範圍；舉凡與發明之構造、裝置、特徵等近似或相雷同者，均應屬本發明申請專利範圍之內，謹此聲明。 The above description of the embodiments and the drawings shown are only part of the embodiments of the present invention, and are not intended to limit the scope of the present invention. Anything similar or similar to the structure, device, feature, etc. of the invention shall belong to the application of the present invention Within the scope of the patent, hereby declare.

10:第一晶組 10: The first crystal group

11:錫材 11: Tin material

12、22:電極板 12, 22: Electrode plate

20:第2N晶組 20: 2N crystal group

30:下導板 30: Lower guide plate

40:絕緣物質 40: Insulating substance

50:第一電極 50: first electrode

60:第二電極 60: second electrode

Claims (4)

一種多段式雙串聯多晶組結構二極體元件，係包含：2N個晶組，其前(第1晶組)後(第2N組)二晶組之頂面分別配置一電極板，作為第一、第二電極；其中該2N個晶組之每個晶組均係依電性需求做垂直性調整或擴充，且各晶組的層數為相同，或依電性需求為不同層數或不同類別組合，當各晶組的間層數不同時，於較少層數之晶組中加入相應厚度的銅粒，以補足厚度差；其中：每一晶組的電性類別為單一性(單一類別、全單向或全雙向)；每一晶組係由多類別晶粒混合組合，或由全同向組合；每一晶組的多晶粒係以正、反向交錯組合；或該2N個晶組包含將單向功能晶組與雙向功能晶組；N個下導板，係將2N個晶組之底面以錫材兩兩連接；(N-1)個上導板，係將前後二晶組除外的(2N-2)個晶組之頂面兩兩連接；以及一絕緣物質，係包覆該些晶組、該些下導板及該些上導板，而作為第一、第二電極用的電極板係外露於該絕緣物質外。 A multi-stage dual-series polycrystalline group structure diode element, which contains: 2N crystal groups, the top surfaces of the front (first crystal group) and the back (2N group) two crystal groups are respectively provided with an electrode plate as the second crystal group 1. The second electrode; wherein each of the 2N crystal groups is vertically adjusted or expanded according to electrical requirements, and the number of layers of each crystal group is the same, or different layers or according to electrical requirements Different types of combinations, when the number of interlayers in each crystal group is different, add copper grains of corresponding thickness to the crystal group with a smaller number of layers to make up for the difference in thickness; among them: the electrical type of each crystal group is unity ( Single type, all one-way or all two-way); each crystal group is composed of a mixed combination of multiple types of crystal grains, or a combination of all the same direction; each crystal group's polycrystalline grains are combined in a forward and reverse staggered combination; or 2N crystal groups include unidirectional functional crystal groups and bidirectional functional crystal groups; N lower guide plates, which connect the bottom surfaces of 2N crystal groups with tin in pairs; (N-1) upper guide plates, The top surfaces of the (2N-2) crystal groups other than the front and rear two crystal groups are connected in pairs; and an insulating material that covers the crystal groups, the lower guide plates and the upper guide plates as the first The electrode plate for the second electrode is exposed outside the insulating material. 如請求項1所述之多段式雙串聯多晶組結構二極體元件，其中，該2N個晶組中任一晶組均可被另一並聯新晶組所取代，經由下導板而與其他晶組串聯，形成一包含串聯、並聯、多段式雙串聯晶組結構之元件。 The multi-stage dual-series polycrystalline group structure of the diode element according to claim 1, wherein any one of the 2N crystal groups can be replaced by another parallel new crystal group, and it is connected with each other through the lower guide plate. Other crystal groups are connected in series to form an element including series, parallel, multi-stage double series crystal group structure. 如請求項2所述之多段式雙串聯多晶組結構二極體元件，其中，所述之各類組合中若因封裝尺寸要求限制，實際電性需求並不需要足2N個晶組組合時，則不足之晶組以相應厚度之銅粒等取代之。 The multi-stage dual-series polycrystalline group structure of the diode device described in claim 2, wherein, if the various combinations of the various combinations are limited by package size requirements, the actual electrical requirements do not require sufficient 2N die group combinations , The insufficient crystal group is replaced by copper particles of corresponding thickness. 一種多段式雙串聯多晶組結構二極體元件的構裝方法，包括：1)將N個下導板置於一製具上；2)將2N個晶組依電氣特性規劃依序置於該N個下導板的兩端上；其中該N個下導板分別將2N個晶組自第1組起每兩晶組之底面以錫材連接；3)將(N-1)個上導板置於對應之晶組頂面；其中於該(N-1)個上導板分別置於扣除第1與第2N晶組外的(2N-2)個晶組之頂面，並自第2組起每兩晶組之頂面以錫材連接；4)將二電極板分別以錫材與第1個晶組及第2N個晶組之上方頂面電極面連結；以及5)以一絕緣物質包覆該些晶組、該些下導板及該些上導板，並令該二電極板外露於該絕緣物質外。 A method for assembling a diode element with a multi-stage dual-series polycrystalline group structure includes: 1) placing N lower guide plates on a tool; 2) placing 2N crystal groups in order according to electrical characteristics planning On both ends of the N lower guide plates; among them, the N lower guide plates respectively connect 2N crystal groups from the first group to the bottom surfaces of every two crystal groups with tin material; 3) put (N-1) upper The guide plate is placed on the top surface of the corresponding crystal group; wherein the (N-1) upper guide plates are respectively placed on the top surface of the (2N-2) crystal groups excluding the first and 2N crystal groups, and self From the second group, the top surfaces of every two crystal groups are connected with tin material; 4) the two electrode plates are connected with the upper top electrode surfaces of the first crystal group and the 2N crystal group with tin materials; and 5) An insulating material covers the crystal groups, the lower guide plates and the upper guide plates, and the two electrode plates are exposed outside the insulating material.
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TW201631736A (en) * 2015-02-17 2016-09-01 立昌先進科技股份有限公司 Multifunctional miniaturized SMD electronic components and process for manufacturing the same
TW201822322A (en) * 2016-12-09 2018-06-16 美麗微半導體股份有限公司 Flip-chip package rectification/protection diode element with multiple chip stacks capable of reducing the height of diode element and extending the number of flip-chips based on voltage resistance requirements

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