TW201942398A - Coating method of continuous coating system and coating film obtained by the same capable of improving compactness and adhesion of the coating film - Google Patents

Abstract

A continuous coating system includes a carrying plate and a transport mechanism, and further includes a load-in device, a pre-processing device, a sputtering device and a load-out device in a production direction, wherein neighboring devices are adjacent to each other and connected to define a production channel. The sputtering device has a sputtering chamber, a target unit disposed in the sputtering chamber, and a power supply assembly. The power supply assembly includes a power supply and a transient pulse circuit module connected in parallel with the power supply and provided with an inductor, a high speed switch, and a supercapacitor. The high speed switch is connected in series between the target unit and the inductor, and the super capacitor is connected in parallel with the sputtering chamber and the inductor for being connected in parallel with the power supply. The transport mechanism has a driving unit and a detent unit located in the production channel, and the carrying plate is located on the detent unit so that the driving unit may drive the detent unit to enable the carrying plate on the detent unit to move in the production channel.

Description

Continuous coating system, coating method and coating film obtained by the method

The invention relates to a coating method, in particular to a continuous coating system, a coating method thereof and a coating film obtained by the method.

Based on the physical vapor deposition method (PVD) in the thin film process, it can be used to coat metal oxides or metal nitrides with super-hard, corrosion-resistant and oxidation-resistant coatings, so it is widely used by mechanical components, bicycle components Used by major industries.

For example, the Republic of China Patent No. 539815 (hereinafter referred to as the former case 1) discloses a chain with a brilliant surface and a method for forming the chain. The chain with a brilliant color disclosed in the previous case 1 has a chain body and a color coating unit plated on the chain body; wherein the color coating unit is a cathodic arc discharge forming method (cathodic arc plasma deposition). The color coating unit includes a base layer which is completely covered on the outer surface of the chain body and is composed of titanium nitride, zinc nitride or zirconium nitride, and is sequentially covered on the base layer and It is a multiple color rendering layer composed of materials such as titanium oxynitride, zinc oxynitride or zirconia.

Specifically, the method disclosed in the previous case 1 is to deposit a gold-yellow titanium nitride (TiN) layer as the base layer on the outer surface of the chain body by cathodic arc discharge forming method, and then A plurality of titanium oxynitride (TiNxOy) layers are sequentially deposited on the titanium nitride layer as the aforementioned color developing layers, respectively. The metal in the aforementioned base layer and each color-developing layer (that is, the metal material of the cathode target) and the thickness of the film layer can determine the color exhibited by the coating, and as the oxygen content in each color-developing layer increases, The color of each color-developing layer can be changed. Taking a golden yellow titanium nitride layer as an example, with the increase of the oxygen flow in the coating cavity introduced by the cathodic arc discharge forming method during the forming process, the subsequently deposited titanium oxynitride layer (ie, the color developing layer) It will appear blue.

Although the technical content disclosed in the previous case 1 can produce a finished product with a chain with a colorful surface; however, the equipment used in the previous case 1 is only a single cavity batch type (batch type), which cannot be used in a single unit. The pretreatment and deposition processes required for the finished product are directly completed in the equipment. Therefore, for completing the complete process of the finished product, the time and cost required will inevitably increase.

In addition, China Mainland Patent No. 104451570 A Publication (hereinafter referred to as the former case 2) discloses a method for plating a color film by magnetron sputtering. The color film disclosed in the previous case 2 is a tin oxide film deposited by a magnetron sputtering method in a vacuum chamber; wherein, the aforementioned magnetron sputtering method causes an argon plasma to bombard a stationary cathode A tin target so that the bombarded and sputtered metal particles are dissociated by argon plasma and deposited on an anode substrate with a running speed of 15 mm / s, and the number of times the anode substrate is run is the cathode target The starting point to the ending point is one trip, and runs 4 times. However, before the tin oxide film is deposited, the substrate disposed on the anode is still subjected to pretreatment outside the vacuum chamber. Therefore, the vacuum chamber disclosed in the previous case 2 still belongs to the sputtering equipment of a single-chamber batch furnace. For the completion of the complete process of the finished product, the problem of time-consuming manufacturing process cannot be solved.

In addition, the plasma density of the sputtered particles sputtered from the target material by the method disclosed in the former case 1 or the former case 2 is still insufficient; therefore, it also affects the compactness and adhesion of the coating. Sex.

From the above description, it can be known that under the premise of solving the problems such as the time consuming of the complete process, the problem of insufficient plasma density of the sputtered particles is also improved to improve the compactness and adhesion of the coating, which are those skilled in the relevant technical field and need to be solved Topic.

Therefore, a first object of the present invention is to provide a continuous coating system with high plasma density of sputtered particles.

A second object of the present invention is to provide a coating method with high density and high adhesion.

A third object of the present invention is to provide a plating film with high density and high adhesion.

Therefore, the continuous coating system of the present invention includes a tray and a conveying mechanism, and further includes a loading device, a pre-processing device, a sputtering device, and a loading device along a production direction. The loading device includes a loading cavity. The pre-processing device includes a pre-processing cavity adjacent to and communicating with the loading cavity. The sputtering device includes a sputtering chamber adjacent to and communicating with the pre-processing chamber, a target unit disposed in the sputtering chamber, and at least one power supply component. The power supply component includes a power supply and an impulse circuit module connected in parallel to the power supply. The transient pulse circuit module has an inductance, a high-speed switch, and a super-capacitor. The high-speed switch is connected in series between the target unit and the inductor, and the super capacitor is connected in parallel to the sputtering cavity and the inductor in parallel with the power supply. The load-out device includes a load-out cavity adjacent to and in communication with the sputtering cavity, and the loading cavity, the pre-processing cavity, the sputtering cavity, and the load-out cavity collectively define a production aisle. The transfer mechanism includes a driving unit and a detent unit connected to the driving unit and located in the production channel. The carrier plate is located on the detent unit, so as to drive the carrier plate positioned on the detent unit to move in the production channel through the driving unit and the detent unit.

In addition, the coating method of the present invention is implemented through the continuous coating system described above, and includes the following steps: a step (a), a step (b), a step (c), and a step (d).

The step (a) is that a batch of objects to be plated on the carrier plate is transferred into the loading cavity through the detent unit to execute a heating procedure.

In step (b), the batch of objects to be plated on the carrier is transferred into the pre-processing chamber through the detent unit to perform a plasma cleaning process.

The step (c) is that the batches to be plated on the carrier plate are transferred into the sputtering chamber through the detent unit to be executed through the power supply of the power supply assembly and the instantaneous pulse circuit module. A sputtering process, whenever the high-speed switch is in an open circuit state, the power supply can fully charge the super capacitor within a flameout time of each cycle, and whenever the high-speed switch is in a circuit-on state At the same time, the power supply device can discharge the target unit connected to the high-speed switch in an instant with the supercapacitor with a full charge within a discharge time of each cycle, so as to make the sputtering inside the sputtering chamber The target particles ejected from the target unit can be instantly dissociated through the power supply and the power provided by the fully-charged super capacitor, thereby sputtering a high density and high adhesion on the batch of objects to be plated. Target coating; each cycle consists of its flame-out time and its discharge time.

In step (d), the batch of objects to be plated with the target coating film sputtered is taken by the carrier tray to the carry-out cavity along the production direction to perform a cooling process.

In addition, the coating film of the present invention is prepared by the coating method as described above; wherein the batches to be plated are a plurality of chain body, and each chain body is in common with the plating film sputtered on the corresponding chain body. Form a chain.

The effect of the present invention is that in addition to the batch of objects to be plated being able to perform the pretreatment and the sputtering process in a single complete process through the continuous coating system to obtain a finished product, the sputtering device can also borrow the power supply. Cooperate with the super capacitor of the instant pulse circuit module to instantly discharge the target unit within the discharge time of each cycle, so that the target particles that are sputtered can pass through the power supply and the super charged battery. The power provided by the capacitor is instantly dissociated, thereby increasing the plasma density and sputtering a high-density and high-adhesion target coating on the batch to be plated.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers. <Detailed description of the invention>

Referring to FIG. 1 and FIG. 2, an embodiment of the continuous coating system of the present invention includes a carrier plate 5 and a conveying mechanism 6, and further includes a loading device 1, a pre-processing device 2, a A sputtering device 3 and a carry-out device 4.

The loading device 1 includes a loading cavity 11 having an inlet end 10.

The pre-processing device 2 includes a pre-processing chamber 21 adjacent to and communicating with the loading chamber 11.

The sputtering apparatus 3 includes a sputtering chamber 31 adjacent to and communicating with the pre-processing chamber 21 and grounding, a target unit 32 disposed in the sputtering chamber 31, and a first The power supply module 33, a second power supply module 34, and a third power supply module 35. In this embodiment of the present invention, the target unit 32 has a first target 321, a second target 322, and a third target 323 spaced from each other, and the first target 321, the first The two targets 322 and the third target 323 are respectively electrically connected to the first first source supply module 33, the second power supply module 34, and the third power supply module 35, and the targets 321, 322 Both 323 and 323 are titanium targets (Ti target).

In addition, each power supply module 33, 34, 35 (see FIG. 2) has a DC power supply 331, 341, 351, and a corresponding DC power supply 331, 341, 351 connected in parallel. Instantaneous pulse circuit modules 332, 342, 352. Each instantaneous pulse circuit module 332, 342, 352 has an inductor 3321, 3421, 3521, a high-speed switch 3322, 3422, 3522, and a super capacitor 3323, 3423, 3523. The high-speed switches 3322, 3422, and 3522 are connected in series between the corresponding targets 321, 322, and 323 and the inductors 3321, 3421, and 3521, and the supercapacitors 3323, 3423, and 3523 are connected in parallel to the sputtering chamber 31 and The respective corresponding inductors 3321, 3421, and 3521 are connected in parallel with the respective corresponding DC power supplies 331, 341, and 351.

The load-out device 4 includes a load-out cavity 41 that is adjacent to and communicates with the sputtering cavity 31 and has an outlet end 40, and the loading cavity 11, the pre-processing cavity 21, and the sputtering cavity. 31 and the loading cavity 41 define a production channel C together.

The conveying mechanism 6 includes a driving unit (not shown), and a driving unit 61 connected to the driving unit and located in the production channel C. The carrier plate 5 is located on the detent unit 61, so as to link the detent unit 61 through the driving unit to drive the carrier plate 5 located on the detent unit 61 to move in the production channel C. The actuating unit 61 may be a belt roller assembly or a gear assembly. The transmission mechanism 6 belongs to the prior art and is not the technical focus of the present invention, and will not be described in detail here.

It should be added that the continuous coating system of this embodiment of the present invention can actually include an upstream buffer device (not shown) and a downstream buffer device (not shown), and the upstream buffer device has a The upstream buffer chamber is connected between the pre-processing chamber 21 and the sputtering chamber 31. The downstream buffer device has a downstream buffer chamber adjacent to the sputtering chamber 31 and the carrying-out chamber 41. Therefore, the detent unit 61 can drive the carrier disc 5 to reciprocate between the upstream buffer cavity and the downstream buffer cavity.

In this embodiment of the present invention, the high-speed switch 3322, 3422, 3522 of each instantaneous pulse circuit module 332, 342, 352 is an insulated gate bipolar transistor (IGBT).

In addition, referring to FIGS. 1 and 2 again, an embodiment of the coating method of the present invention is implemented through the continuous coating system described above, which includes the following steps: a step (a), a step (b), and a step (c), and a step (d).

The step (a) is that a batch of objects to be plated (not shown) on the carrier plate 5 is transferred to the loading cavity 11 through the detent unit 61 to perform a heating process.

In step (b), the batches to be plated on the carrier plate 5 are transferred into the pre-processing chamber 21 through the detent unit 61 to perform a plasma cleaning procedure. In the coating method of this embodiment of the present invention, an argon (Ar) plasma cleaning procedure is applied to the batch of objects on the carrier 5.

In step (c), the batches to be plated on the carrier plate 5 are transferred into the sputtering chamber 31 through the detent unit 61 to pass through the DC power of the power supply components 33, 34, and 35. The power supplies 331, 341, and 351 and the instantaneous pulse circuit modules 332, 342, and 352 perform a sputtering process.

Please refer to FIG. 3, FIG. 4, and FIG. 5. Specifically, each time the high-speed switches 3322, 3422, and 3522 are in a circuit-on state, each of the power supplies 331, 341, and 351 can be different from each other. The corresponding fully charged supercapacitors 3323, 3423, and 3523, within a discharge time (T _on ) of each cycle (T), target 321, 322 connected in series to their corresponding high-speed switches 3322, 3422, and 3522. And 323 for a momentary discharge, so that the target particles 321, 322, and 323 in the sputtering chamber 31 can be sputtered through the corresponding DC power supplies 331, 341, 351 and the warp. The power provided by the fully-charged supercapacitors 3323, 3423, 3523 is instantly dissociated into a blue and dissociated target particle plasma 320, thereby increasing the plasma density of the target particle plasma, and in this batch The target to be plated is sputter-plated with a high-density and high-adhesion target coating (not shown).

In addition, referring to FIG. 6, FIG. 7, and FIG. 8, each time each of the high-speed switches 3322, 3422, and 3522 is in a circuit-off state, each of the DC power supplies 331, 341, and 351 and each of the exhausted power sources The capacitors 3323, 3423, and 3523 stop supplying power to the corresponding targets 321, 322, and 323, so that the dissociated target particle plasma 320 shown in FIG. 3 and FIG. 4 disappears, and each DC power supply 331, 341, and 351 can fully charge the corresponding supercapacitors 3323, 3423, and 3523 within a flame-out time (T _off ) of each cycle (T), so that the discharge time (T _on ) of the next cycle (T) ), The next instantaneous discharge is performed on each of the targets 321, 322, and 323 again (as shown in Figs. 3, 4 and 5).

In the coating method of this embodiment of the present invention, each cycle (T) is composed of its flame-off time (T _off ) and its discharge time (T _on ), and each high-speed switch 3322, 3422, 3522 (ie, IGBT) is It is electrically connected to a computer to set the period (T), discharge time (T _on ) and flameout time (T _off ) of its embodiment through its microprocessor.

Referring again to FIG. 3, FIG. 4, and FIG. 5, more specifically, when each of the high-speed switches 3322, 3422, and 3522 is in an on state of the circuit, each DC power supply 331, 341, 351 can For each supercapacitor 3323, 3423, and 3523 that are fully charged, within the discharge time (T _on ) of each cycle (T), the first target 321 connected in series to the corresponding three-speed switch 3322, 3422, and 3522 is connected. The second target material 322 and the third target material 323 provide a target voltage (Vt) and a target current (It), so that the grounded sputtering chamber 31 and each target 321, 322, 323 A potential difference (△ V) is generated between the DC power supplies 331, 341, and 351 and the supercapacitors 3323, 3423, and 3523 that are fully charged. Plasma density of 320. When the target current (It) reaches the maximum power, the target current corresponding to the target current is the peak current (hereinafter referred to as Ip).

Preferably, a duty cycle (ie, T _on / T) defined by the discharge time (T _on ) of each cycle (T) and the flame-out time (T _off ) is between 0.1% and 30%; each DC power supply 331, 341, 351 with the corresponding super capacitors 3323, 3423, 3523 provides the target voltage (Vt) and peak current ( Ip) are at least greater than 500 V and at least greater than 100 A, respectively; when the batch of objects to be plated performs the sputtering procedure in the sputtering chamber 31, the carrier 5 is placed in the sputtering chamber through the detent unit 61 Move back and forth within 31 at least once.

It should be further added here that when the discharge time (T _on ) of each cycle (T) is insufficient, the peak current (Ip) provided to each target 321, 322, 323 cannot reach 100 A. When each When the discharge time (T _on ) of the period (T) is too large, the capacitance of each super capacitor 3323, 3423, 3523 will be depleted, so that the peak current (Ip) provided to each target 321, 322, 323 decreases; When the off time (T _off ) of each cycle (T) is insufficient, the charging time of each supercapacitor 3323, 3423, 3523 is insufficient to cause its power to be fully charged. When the off time (T _off ) of each cycle (T) is too long This will also affect the growth rate of the coating. Therefore, more preferably, the discharge time (T _on ) of each cycle (T) is between 10 μs and 500 μs, and the flame-off time (T _off ) of each cycle (T) is between 1840 μs and 10000 μs. .

In step (d), the batch of objects to be plated with the target coating film sputtered along the production direction X is carried by the carrier plate 5 to the carry-out cavity 41 to execute a cooling process, and after the cooling process is completed, After the procedure, the batch of to-be-plated objects sputtered with the target coating is driven through the detent unit 61 to drive the carrier plate 5 from the outlet end 40 of the carry-out cavity 41.

An embodiment of the coating film of the present invention is prepared by the embodiment of the coating method as described above; wherein the batches to be plated are a plurality of chain body, and each chain body and the sputtering are on the corresponding chains. The plated film on the sheet body together constitutes a chain.

Preferably, after the chain pieces are assembled into a chain, the plating film sputtered on the body of each chain piece does not fall off. <Specific Example 1 (E1)>

One specific example 1 (E1) of the coating method of the present invention is implemented through the above-mentioned embodiment of the continuous coating system.

Referring again to FIG. 1, first, a batch of chain body (not shown) is disposed on the carrier plate 5 to drive the carrier plate 5 from the inlet end 10 of the loading cavity 11 through the detent unit 61. A heating program is executed in the loading cavity 11, and the temperature of the heating program of the specific example 1 (E1) is 150-350 ° C.

After the heating process is performed, the batches of chain bodies on the carrier plate 5 are transferred into the pre-processing chamber 21 through the detent unit 61, and the gas flow rate is introduced into the pre-processing chamber 21 as 280 sccm of argon (Ar), and at the same time, provide 800 W of radio frequency (rf) electric power to the counter electrode plate in the pre-processing chamber 21, so that the pre-processing chamber has a working pressure of 4 × 10 ^-2 Torr ( An Ar plasma cleaning procedure was performed on the batches of chain pieces for 120 seconds under working pressure).

Then, the batches of chain bodies on the carrier plate 5 are transferred into the sputtering chamber 31 through the detent unit 61 to pass through the first power supply module 33, the second power supply module 34, the first The power supplies 331, 341, and 351 of the three power supply components 35 and the corresponding instantaneous pulse circuit modules 332, 342, and 352 perform a sputtering process of a multilayer film. In principle, the sputtering process of the multilayer film of the specific example 1 (E1) of the present invention includes a Ti layer sputtering process, a TiN layer sputtering process, and a TiNxOy layer sputtering process in order.

Specifically, in the Ti layer sputtering process, Ar with a gas flow rate of 300 sccm is introduced into the sputtering chamber 31, and at the same time, the period (T) of each high-speed switch 3322, 3422, and 3522 is set from the microprocessor. The flame-off time (T _off ) and discharge time (T _on ) are 2075 μs, 2000 μs, and 75 μs, respectively. Whenever each of the high-speed switching circuit is de-energized 3322,3422,3522 state, the power supply can make 331,341,351 corresponding to each of the super capacitor 3323 in each of the flame out time of 2000 μs (T _off), 3423, 3523 are fully charged; each time the high-speed switches 3322, 3422, and 3522 are in the on state of the circuit, each of the power supplies 331, 341, and 351 can simultaneously use the fully-charged super capacitors 3323, 3423, and 3523 at 75 μs Within each discharge time (T _on ), the first target (hereinafter referred to as TPT1) 321, the second target (hereinafter referred to as TPT2) 322, and the third target (hereinafter referred to as TPT3) 323 are respectively provided with 933. Target voltages (Vt) of V, 943 V and 713 V, and peak currents (Ip) of 672 A, 752 A and 705 A, so that the targets 321, 322 are sputtered in the sputtering chamber 31 The Ti particles of 323 and 323 can be instantly dissociated into the target material through the electric power (6270 W, 7050 W, 5030 W) provided by each power supply 331, 341, 351 and the fully charged super capacitors 3323, 3423, 3523 ( Ti) particle plasma 320, and the working pressure of the sputtering chamber 31 reaches 5.8 × 10 ^-3 Torr, so that the chain body A Ti layer was sputtered. In the specific example 1 (E1) of the present invention, when the batches of chain pieces execute the Ti layer sputtering process in the sputtering chamber 31, the carrier 5 is caused to be sputtered through the detent unit 61. The cavity 31 moves back and forth twice at a moving speed of 8-20 mm / sec, and the temperature of the chain body is 280 ˚C.

The TiN layer sputtering process of this specific example 1 (E1) is substantially the same as the Ti layer sputtering process, except that nitrogen (N ₂ ) is further introduced into the sputtering chamber 31, and Ar and N _{2 The} overall gas flow is 300 sccm. Similarly, whenever the high-speed switches 3322, 3422, and 3522 are in the power-off state of the circuit, each power supply 331, 341, and 351 can fully charge the corresponding super capacitors 3323, 3423, and 3523; When the high-speed switches 3322, 3422, and 3522 are in a state in which the circuit is turned on, each of the power supplies 331, 341, and 351 can simultaneously fully charge each of the supercapacitors 3323, 3423, and 3523 with corresponding targets 321, 322, and 323. Provide its target voltage (Vt) and its peak current (Ip) separately, so that N ₂ in the sputtering chamber 31 and Ti particles sputtered out of these targets 321, 322, 323 can pass through each power supply 331 , 341, 351 and the supercapacitors 3323, 3423, and 3523 that are fully charged are instantly dissociated, and the working pressure of the sputtering chamber 31 reaches 4.5 × 10 ^-3 Torr, so that it is applied to each Ti layer. A TiN layer is sputtered on.

The TiNxOy layer sputtering process of this specific example 1 (E1) is substantially the same as the TiN layer sputtering process, except that oxygen (O ₂ ) is further introduced into the sputtering chamber 31, and Ar, N The gas flow rate of ₂ and O ₂ as a whole was 500 sccm. Similarly, whenever the high-speed switches 3322, 3422, and 3522 are in the power-off state of the circuit, each power supply 331, 341, and 351 can fully charge the corresponding super capacitors 3323, 3423, and 3523; When the high-speed switches 3322, 3422, and 3522 are in a state in which the circuit is turned on, each of the power supplies 331, 341, and 351 can simultaneously fully charge each of the supercapacitors 3323, 3423, and 3523 with corresponding targets 321, 322, and 323 The target voltage (Vt) and its peak current (Ip) are provided respectively, so that the N ₂ and O ₂ in the sputtering chamber 31 and the Ti particles sputtered from the targets 321, 322, and 323 can pass through each power source. The electric power provided by the suppliers 331, 341, 351 and the supercapacitors 3323, 3423, and 3523 that have been charged with electricity is instantly dissociated, and the working pressure of the sputtering chamber 31 reaches 4.6 × 10 ^-3 Torr. A TiNxOy layer is sputtered on each TiN layer, and a Ti / TiN / TiNxOy multilayer film is formed on each chain body.

Finally, each chain body sputtered with the Ti / TiN / TiNxOy multilayer film is taken along the production direction X by the carrier disc 5 to the carry-out cavity 41 to execute a cooling process, and after completing the cooling process From the outlet end 40, the carrying-out cavity 41 is taken out to make a batch of royal green chain pieces (see FIG. 9).

The detailed process parameters of the coating method of the specific example 1 (E1) of the present invention are summarized in the following Tables 1. to 4.

Table 1.

Table 2.

table 3.

Table 4. <Specific Example 2 (E2)>

One specific example 2 (E2) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and the specific process parameters are summarized in the following Table 5. to Table 8. In addition, in the present invention, after implementing the coating method of the specific example 2 (E2), a batch of blue-colored chain pieces are prepared (see FIG. 10).

table 5.

Table 6.

Table 7.

Table 8. <Specific Example 3 (E3)>

One specific example 3 (E3) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and the specific process parameters are summarized in the following Tables 9 to 12. In addition, in the present invention, after implementing the coating method of the specific example 3 (E3), a batch of sun-gold chain pieces is prepared (see FIG. 11).

Table 9.

Table 10.

Table 11.

Table 12. <Specific Example 4 (E4)>

One specific example 4 (E4) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and the specific process parameters are summarized in the following Tables 13. to 16. In addition, in the present invention, after implementing the coating method of the specific example 4 (E4), a batch of blue-violet chains are prepared (see FIG. 12).

Table 13.

Table 14.

Table 15.

Table 16. <Specific Example 5 (E5)>

One specific example 5 (E5) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and the specific process parameters are summarized in the following Tables 17. to 20. In addition, in the present invention, after implementing the coating method of the specific example 5 (E5), a batch of fuchsia chains are prepared (see FIG. 13).

Table 17.

Table 18.

Table 19.

Table 20.

The applicant has assembled the batch of blue-violet chains according to the coating method of the specific example 4 (E4) described above to further assemble a chain as shown in FIG. 14. It can be seen from FIG. 14 that after the blue-violet chain pieces are assembled into the chain, the multilayer films sputtered on the body of the chain pieces do not fall off, and each chain piece still shows blue-violet multilayer films.

According to the detailed description of the present invention and the description of each specific example, it can be known that when the sputtering process is implemented, the present invention is electrically connected to the DC power supply units 331, 341, and 351 of the power supply components 33, 34, and 35. The instantaneous pulse circuit modules 332, 342, and 352 of the respective power supplies 331, 341, and 351 force the high-speed switches 3322, 3422, and 3522 to turn off the circuit, and each of the DC power supplies 331, 341, and 351 and the supercapacitors 3323, 3423, and 3523 that have run out of power can stop supplying power to their corresponding targets 321, 322, and 323, and each DC power supply 331, 341, and 351 can turn off at each cycle (T) Within the time (T _off ), the respective supercapacitors 3323, 3423, and 3523 are fully charged, so that the next time the circuit is turned on, the DC power supplies 331, 341, and 351 can work with each supercharged battery. The capacitors 3323, 3423, and 3523 provide double the electric power to their corresponding targets 321, 322, and 323 within the discharge time (T _on ) of their period (T), so that the sputtering inside the sputtering chamber 31 is sputtered. The target particles of each target 321, 322, 323 are emitted, and The provided electric power is instantly dissociated into a blue and dissociated target particle plasma 320, thereby increasing the plasma density of the target particle plasma 320 and sputtering high density on the batch to be plated. And highly adherent target coating.

In addition, the continuous coating system is also equipped with the pre-processing device 2 before the sputtering device 3, and the batch of objects to be plated (such as the chain body of each specific example) performs the sputtering process. Before, the carrier plate 5 carrying the batch of objects to be plated disposed thereon can still be directly transmitted to the pre-processing chamber 21 through the actuating unit 61 to execute the pre-processing procedure in the same complete process ( For example, the argon plasma cleaning process of each specific example) and the sputtering process are used to solve the problem of time consuming process.

In summary, the continuous coating system, coating method and coating obtained by the method of the present invention can not only complete all the procedures in the same complete process to obtain a finished product, but also have a high plasma density in the sputtering process. It is also possible to sputter plate a high-density and high-adhesion coating on the batch to be plated, so it can indeed achieve the purpose of the present invention.

However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, any simple equivalent changes and modifications made according to the scope of the patent application and the contents of the patent specification of the present invention are still Within the scope of the invention patent.

1‧‧‧ loading device

3422‧‧‧High-speed switch

 10‧‧‧ Entrance

3423‧‧‧Super capacitor

 11‧‧‧ Loading cavity

35‧‧‧Third power supply module

 2‧‧‧ pre-treatment device

351‧‧‧Power Supply

 21‧‧‧Pre-treatment chamber

352‧‧‧Transient Pulse Circuit Module

 3‧‧‧Sputtering device

3521‧‧‧Inductance

 31‧‧‧Sputtered Cavity

3522‧‧‧High-speed switch

 32‧‧‧target unit

3523‧‧‧Super capacitor

 320‧‧‧ Target particle plasma

4‧‧‧ unloading device

 321‧‧‧First target

40‧‧‧Export

 322‧‧‧Second target

41‧‧‧Load cavity

 323‧‧‧third target

5‧‧‧carriage

 33‧‧‧First power supply module

6‧‧‧ Conveyor purchase

 331‧‧‧Power Supply

61‧‧‧Trigger unit

 332‧‧‧Transient Pulse Circuit Module

C‧‧‧ production channel

 3321‧‧‧Inductance

It‧‧‧ target current

 3322‧‧‧High-speed switch

T‧‧‧cycle

 3323‧‧‧Super Capacitor

T _off ‧‧‧ flameout time

 34‧‧‧Second power supply module

T _on ‧‧‧discharge time

 341‧‧‧ Power Supply

Vt‧‧‧ target voltage

 342‧‧‧Transient Pulse Circuit Module

X‧‧‧ Production direction

 3421‧‧‧Inductance

Other features and effects of the present invention will be clearly presented in the embodiment with reference to the drawings, wherein: FIG. 1 is a schematic front view illustrating an embodiment of the continuous coating system of the present invention; FIG. 2 is a schematic side view Illustrates the connection relationship between a sputtering chamber, a target unit, and three power supply components of a sputtering apparatus according to this embodiment of the present invention; FIG. 3 is a current versus time curve diagram and a schematic view of the sputtering apparatus The relationship diagram illustrates that when a high-speed switch in the power supply module of this embodiment of the present invention is in a circuit conduction state, a power supply unit cooperates with a fully charged super capacitor to discharge time (T) at each cycle (T). _on) the target for the instant discharge unit; FIG. 4 is a continuation of the diagram in FIG. 3, the description of the embodiment of the present invention, the super capacitor for instant embodiment of the unit in the target discharge time (T _on) the Discharge until the power of the super capacitor is exhausted; Figure 5 is a color image diagram illustrating the target particle plasma generated by one embodiment of the coating method of the present invention; Figure 6 is a relationship diagram continuing from Figure 4; Describe the state where the high-speed switch of this embodiment of the present invention is in a circuit off state; FIG. 7 is a relationship diagram continuing from FIG. 6 and illustrates when the high-speed switch of this embodiment of the present invention is in the circuit off state , Its power supply can charge the supercapacitor within one off period (T _off ) of each cycle (T); FIG. 8 is a relationship diagram continuing from FIG. 7 and illustrates the power supply of this embodiment of the present invention. The super capacitor is fully charged within the flame-out time (T _off ) of each cycle (T); FIG. 9 is a color image diagram illustrating a specific example 1 (E1) of a coating method implemented by the continuous coating system of the present invention A batch of gem green chains produced; FIG. 10 is a color image diagram illustrating a batch of blue chains produced by specific example 2 (E2), one of the coating methods implemented by the continuous coating system of the present invention Figure 11 is a color image diagram illustrating a batch of sun-gold chain produced by specific example 3 (E3) of a coating method implemented by the continuous coating system of the present invention; Figure 12 is a color image diagram, Description of the continuous coating system A batch of blue-violet chains made by specific example 4 (E4), one of the implemented coating methods; FIG. 13 is a color image diagram illustrating a specific example 5 of a coating method implemented by the continuous coating system of the present invention E5) a batch of fuchsia chains produced; and FIG. 14 is a color image diagram illustrating a finished chain product assembled by the blue-violet chains of the specific example 4 (E4) of the present invention.

Claims (9)

A continuous coating system includes a carrier plate and a conveying mechanism, and further includes a loading device, a pre-processing device, a sputtering device, and a loading device along a production direction: The loading device includes a Loading chamber; the pre-processing device includes a pre-processing chamber adjacent to and communicating with the loading chamber; the sputtering device includes a sputtering chamber adjacent to and communicating with the pre-processing chamber, and The target unit in the sputtering chamber and at least one power supply component, the power supply component has a power supply and a transient pulse circuit module connected in parallel with the power supply, and the transient pulse circuit module has a An inductor, a high-speed switch, and a super capacitor, the high-speed switch is connected in series between the target unit and the inductor, and the super capacitor is connected in parallel to the sputtering cavity and the inductor in parallel with the power supply; the load The discharge device includes a load-out cavity adjacent to and in communication with the sputtering cavity, and the loading cavity, the preprocessing cavity, the sputtering cavity, and the load-out cavity collectively define a production channel; The conveyor The driving unit comprises a driving unit and a driving unit connected to the driving unit and located in the production channel; and the carrier is located on the driving unit, so that the driving unit is connected to the driving unit through the driving unit to drive the position on the driving unit. The carrier plate on the moving unit moves in the production channel. The continuous coating system according to claim 1, wherein the high-speed switch of the transient pulse circuit module is an insulated gate bipolar transistor. A coating method is implemented by a continuous coating system as described in any one of claims 1 to 3, and includes the following steps: Step (a), a batch of objects to be plated on the carrier is The actuating unit is transferred into the loading chamber to perform a heating procedure; a step (b), the batch of objects to be plated on the tray is transferred to the preprocessing chamber via the actuating unit to perform A plasma cleaning procedure; a step (c), the batches to be plated on the carrier plate are transferred into the sputtering chamber through the detent unit to pass through the power supply of the power supply assembly and the instant The pulse circuit module performs a sputtering process. Whenever the high-speed switch is in a circuit-breaking state, the power supply can fully charge the super capacitor within a flameout time of each cycle. When the circuit is in a conductive state, the power supply can simultaneously discharge the target unit connected to the high-speed switch in series within a discharge time of the super capacitor with a full charge in order to make the splash Warp inside the plating chamber The target particles ejected from the target unit can be instantly dissociated through the power supply and the power provided by the fully-charged super capacitor, thereby sputtering a high density and high adhesion on the batch of objects to be plated. Target coating; and a step (d), the batch of objects to be plated after being sputtered with the target coating is taken along the production direction by the carrier tray to the carry-out cavity to perform a cooling process; wherein each The cycle is composed of its flameout time and its discharge time. The coating method according to claim 3, wherein a duty cycle defined by the discharge time of each cycle and the quench time is between 0.1% and 30%. The coating method according to claim 4, wherein the discharge time of each cycle is between 10 μs and 500 μs; and the flameout time of each cycle is between 1840 μs and 10000 μs. The coating method according to claim 5, wherein the power supply and the target voltage and the peak current provided by the super capacitor to the target unit are at least greater than 500 V and at least greater than 100 A, respectively. The coating method according to claim 6, wherein when the batch of objects to be plated executes the sputtering procedure in the sputtering chamber, the carrier is moved back and forth in the sputtering chamber through the detent unit at least once. . A coating is prepared by the coating method described in any one of claims 3 to 7; wherein the batch of objects to be plated is a plurality of chain body, and each chain body and sputtering are on respective chains. The plated film on the sheet body together constitutes a chain. The plating film according to claim 8, wherein after the chains are assembled into a chain, the plating films sputtered on the body of each chain cannot fall off.