CN107620047A - A kind of reaction chamber and processing method for PVD plated films - Google Patents

A kind of reaction chamber and processing method for PVD plated films Download PDF

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Publication number
CN107620047A
CN107620047A CN201710742344.3A CN201710742344A CN107620047A CN 107620047 A CN107620047 A CN 107620047A CN 201710742344 A CN201710742344 A CN 201710742344A CN 107620047 A CN107620047 A CN 107620047A
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China
Prior art keywords
target
electron gun
reaction chamber
plated films
pvd
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CN201710742344.3A
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童磊
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Suzhou An River Source Photoelectric Technology Co Ltd
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Suzhou An River Source Photoelectric Technology Co Ltd
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Priority to CN201710742344.3A priority Critical patent/CN107620047A/en
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Abstract

A kind of reaction chamber and processing method for PVD plated films, including:Extract vacuum, heating target, plated film.Described PVD plated films course of reaction is carried out in a reaction chamber that vacuum is fully sealed, and target is heated by electron gun, target is evaporated to workpiece surface and is formed plating membrane coat.Utilize above-mentioned PVD reaction chambers, including reaction chamber body, electron gun crucible platform, vavuum pump and product station to be coated, its electron gun crucible platform possesses multiple recessed grains, different target materials is put in each groove, can be simple in construction to the recessed grain individually heating where required target according to the needs of rupture pressure disc, it is easy to use, it is practical.

Description

A kind of reaction chamber and processing method for PVD plated films
Technical field
The invention belongs to rupture pressure disc field, and in particular to a kind of reaction chamber and processing method for PVD plated films.
Background technology
PVD is the abbreviation of physical vapour deposition (PVD), is referred under vacuum, using the arc discharge of low-voltage, high current Technology, evaporate target using gas discharge and make all to be ionized by evaporated material and gas, using the acceleration of electric field, Make to be deposited on vacuum coating on workpiece by evaporated material and its reaction product.Realize that material shifts using physical process, in workpiece Surface forms metal or compound coat with property, and its property includes intensity height, wearability, thermal diffusivity, resistance to Corruption, anti-oxidant and insulation etc..The substance source of coating is solid matter, steams target using gas discharge or the mode of heating Hair or ionization, after " evaporation or sputtering ", in the presence of electric field, generated in workpiece surface different from substrate performance Solid matter coating.
With the development of opto-electronic device, more and more higher is required to the manufacturing process of semiconductor, for the surface of rupture pressure disc Coating technology is also to emerge in an endless stream.For by taking a rupture pressure disc as an example, the first layer of rupture pressure disc is mould release membrance, and the second layer is explosion-proof Film, third layer are diaphragm, rupture pressure disc can be carried out transferring texture after diaphragm is torn and add PVD layer.Market On on coating process mainly have water power plate and PVD, plated relative to water power, the adhesion of PVD film layers is bigger, and hardness is higher, Wearability and corrosion resistance are stronger, and the performance of film layer is more stable;Secondly, PVD film layers are extensive, will not produce poisonous or have a dirt The material and gas of dye, have no adverse effect to environment, meet the developing direction of China's Modern Green manufacture.Under normal circumstances, adopt PVD plated films are carried out with the mode of magnetron sputtering, are primarily present following defect:Although one, magnetron sputtering can obtain large area The film layer that is evenly distributed but the selectivity ratios of filmogen are poor, the thickness of film forming also has significant limitation;Secondly, magnetic control The operating air pressure of sputtering is higher, and otherwise the mean free path of electronics is oversize, and electric discharge phenomena are not easy to maintain, so as to cause film dirty The possibility of dye is larger.
In order to solve the above-mentioned technical problem, the present invention proposes a kind of reaction chamber and processing method for PVD plated films, Including:Extract vacuum, heating target, plated film.Described PVD plated films course of reaction is in be fully sealed a, vacuum 10-4 ~10-3Carried out in Pa reaction chamber, target is heated by electron gun, target is evaporated to 200 DEG C~300 DEG C workpiece surfaces Form plating membrane coat.Using above-mentioned PVD reaction chambers, including reaction chamber body, electron gun crucible platform, vavuum pump and treat Coated product station, its electron gun crucible platform possess multiple recessed grains, different target materials, Ke Yigen are put in each groove According to the needs of rupture pressure disc product, to the recessed grain individually heating where required target, simple in construction, easy to use, plated film efficiency high.
The content of the invention
A kind of processing method for PVD plated films, including:
Extract vacuum:Film-coating workpiece is positioned over chamber interior top, will be extracted with vavuum pump in chamber to vacuum.
Heat target:Target is selected according to the demand of rupture pressure disc product, required target is rotated to electron gun upper end, started Electron gun, its evaporation is made to target heating.
Plated film:Target is deposited on the product workpiece of chamber roof through electron gun heating evaporation to chamber roof.
Further, the vacuum in chamber is 10-4~10-3Pa, all deposition reactions are all entered in the vacuum of sealing Shape.Generally, inert gas argon gas is filled with vacuum chamber, it is preferred that argon can be filled with vacuum chamber respectively Gas and oxygen, then it is filled with according to the gas required for target.Such as:When electron gun adds to target silica When hot, inert gas argon gas is full of in chamber;And when electron gun heats to target titanium oxide, want to produce on top Deposition of titania on product workpiece, then need to be filled with oxygen in chamber.
Further, usual PVD plated films have three kinds of basic skills:Vacuum evaporation, magnetron sputtering, multi-arc ion coating.It is preferred that , the present invention carries out heating using electron gun to target makes its evaporation, is deposited on top production portion workpiece, forms plated film.Very It is higher that the method for sky evaporation forms film purity, and thickness is controllable, and equipment is simple, and operation is easier.
Preferably, according to the final effect of different product demand and product, the species of target be also it is different, And the evaporating temperature of different targets is different, during target is heated, according to the evaporating temperature of selected target Set heating-up temperature, heating-up temperature >=evaporating temperature.The heating temperature of electron gun is controlled by adjusting the voltage x current of electron gun Degree, the adjustable electron gun of voltage x current is selected to control temperature practical and convenient, efficiency high.
It may further be preferable that using be evaporated in vacuo PVD method can realize the same heat of product workpiece is coated with it is more Tunic system, vacuum evaporation coating film method institute film plating layer also improve the efficiency of plated film, realize product workpiece while uniform More performances.
A kind of reaction chamber for PVD plated films, including:Reaction chamber body 1, electron gun crucible platform 2, vavuum pump 3, treat Coated product station 4, wherein product station 4 to be coated is installed on the top of reaction chamber body 1, in reaction chamber body 1 Bottom installation electron gun crucible platform 2, the bottom connection vavuum pump 3 of reaction chamber body 1.
Further, the bottom of reaction chamber body 1 is connected to vavuum pump 3, and mainly reaction chamber body 1 is taken out Gas, it is 10 to realize the intrinsic vacuum of reaction chamber-4~10-3Pa, take 15min~25min.
Further, described product station 4 to be coated is installed on the top of reaction chamber body 1, and product workpiece can With smooth placement can also slant setting, preferably, chamber is positioned in " triangle roof " formula using the big product workpiece such as two panels Ceiling portion, increase the load capacity of product in chamber while realizing the uniformity of institute's film plating layer as far as possible, improve the effect of plated film Rate.
Further, the product station 4 to be coated at top can at the uniform velocity rotate, although using vacuum vapor plating It can inherently make the plated film of product workpiece uniform, but product station is at the uniform velocity rotated and more can ensure that and plated on product workpiece Film layer in uniform thickness.It may further be preferable that it is in umbrella that described product station 4 to be coated, which is, product is advantageously implemented Workpiece is positioned over chamber roof in " triangle roof " formula, increases the load capacity of product in chamber.
Further, the inside of electron gun crucible platform 2 placed electron gun, and there is provided more on the surface of electron gun crucible platform 2 Individual groove, each recessed grain place a kind of target, realize that same heat is coated with the different membrane system of multilayer to product workpiece.
Further, the mesa dimensions of described electron gun crucible platform 2 are 30mm × 25mm, are provided with table top N number of recessed Groove, N are >=2 natural number, it is preferred that 20≤N≤30.A kind of target is placed in each groove, specifically needs which is placed Target can arrange in pairs or groups according to the final effect required for product workpiece, can be that hardness is strong, wear-resistant, corrosion-resistant alloy film, It can also be various color extremely dazzled.
Further, the groove of described electron gun crucible platform 2 is rotatable, can be according to needed for product workpiece The effect selection wanted rotates required target to above electron gun, and independent heating evaporation is carried out to it, easy to operate simple, Effectively meets the needs of various products workpiece.
Further, described electron gun crucible platform 2 deviates the bottom center position of reaction chamber body 1, because to be plated The product station 4 of film at the uniform velocity rotates, so 2 off-center position of electron gun crucible platform is it is possible to prevente effectively from plated film is uneven Situation.
Under normal circumstances, the speed of a certain target material deposition is the same, unrelated with the size of product workpiece, typically In the case of, the sedimentation time of common anti-reflection film and color film is 25min~35min, complicated optical filter and color film Sedimentation time is 5h~6h.
Using the reaction chamber and processing method as described above for being used for PVD plated films, it is possible to prevente effectively from product plated film Uneven situation, and improve the efficiency of whole product plated film.Specifically, the groove on electron gun crucible platform can be put simultaneously More than 20 kinds different types of targets are put, at least 20 tunic layers can be completed to product with same heat, efficiency high, lift product Performance;In addition, the plated film station where product rotates rapidly, efficiently complete to also assures that institute's film plating layer while plated film Uniformity.
Brief description of the drawings:
Embodiment is described further below in conjunction with the accompanying drawings, wherein:
Fig. 1 is equipment drawing involved in the present invention.
Primary structure number explanation
1 Reaction chamber body
2 Electron gun crucible platform
3 Vavuum pump
4 Product station to be coated
Following embodiment will combine above-mentioned accompanying drawing and further illustrate the present invention.
Case is embodied
Case 1 is embodied:
A kind of processing method for PVD plated films, including:
Extract vacuum:Film-coating workpiece is positioned over chamber interior top, will be extracted with vavuum pump in chamber to vacuum.
Heat target:Target is selected according to the demand of rupture pressure disc product, required target is rotated to electron gun upper end, started Electron gun, its evaporation is made to target heating.
Plated film:Target is deposited on the product workpiece of chamber roof through electron gun heating evaporation to chamber roof.
A kind of reaction chamber for PVD plated films, including:Reaction chamber body 1, electron gun crucible platform 2, vavuum pump 3, treat Coated product station 4, wherein product station 4 to be coated is installed on the top of reaction chamber body 1, in reaction chamber body 1 Bottom installation electron gun crucible platform 2, the bottom connection vavuum pump 3 of reaction chamber body 1.
Vavuum pump extracts chamber to vacuum 5 × 10-3Pa, take 20min, product workpiece size 30cm × 40cm, electronics Rifle sets high pressure 6KV to target titanium oxide heating evaporation, electric current 480mA, and argon gas, film deposition time are filled with vacuum chamber 30min。
Case 2 is embodied:
A kind of processing method for PVD plated films, including:
Extract vacuum:Film-coating workpiece is positioned over chamber interior top, will be extracted with vavuum pump in chamber to vacuum.
Heat target:Target is selected according to the demand of rupture pressure disc product, required target is rotated to electron gun upper end, started Electron gun, its evaporation is made to target heating.
Plated film:Target is deposited on the product workpiece of chamber roof through electron gun heating evaporation to chamber roof.
A kind of reaction chamber for PVD plated films, including:Reaction chamber body 1, electron gun crucible platform 2, vavuum pump 3, treat Coated product station 4, wherein product station 4 to be coated is installed on the top of reaction chamber body 1, in reaction chamber body 1 Bottom installation electron gun crucible platform 2, the bottom connection vavuum pump 3 of reaction chamber body 1.
Vavuum pump extracts chamber to vacuum 5 × 10-3Pa, take 20min, product workpiece size 2mm × 2mm, electron gun To target titanium oxide heating evaporation, high pressure 6KV is set, electric current 480mA, is filled with argon gas, film deposition time in vacuum chamber 30min。
Case 3 is embodied:
A kind of processing method for PVD plated films, including:
Extract vacuum:Film-coating workpiece is positioned over chamber interior top, will be extracted with vavuum pump in chamber to vacuum.
Heat target:Target is selected according to the demand of rupture pressure disc product, required target is rotated to electron gun upper end, started Electron gun, its evaporation is made to target heating.
Plated film:Target is deposited on the product workpiece of chamber roof through electron gun heating evaporation to chamber roof.
A kind of reaction chamber for PVD plated films, including:Reaction chamber body 1, electron gun crucible platform 2, vavuum pump 3, treat Coated product station 4, wherein product station 4 to be coated is installed on the top of reaction chamber body 1, in reaction chamber body 1 Bottom installation electron gun crucible platform 2, the bottom connection vavuum pump 3 of reaction chamber body 1.
Vavuum pump extracts chamber to vacuum 1 × 10-3Pa, take 23min, product workpiece size 30cm × 40cm, electronics Rifle sets high pressure 6KV to target silica heating evaporation, electric current 130mA, and oxygen, film deposition time are filled with vacuum chamber 32min。
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.

Claims (10)

1. a kind of processing method for PVD plated films, including:
Extract vacuum:Film-coating workpiece is positioned over chamber interior top, will be extracted with vavuum pump in chamber to vacuum.
Heat target:Target is selected according to the demand of rupture pressure disc product, required target is rotated to electron gun upper end, starts electronics Rifle, its evaporation is made to target heating.
Plated film:Target is deposited on the product workpiece of chamber roof through electron gun heating evaporation to chamber roof.
2. it is used for the processing method of PVD plated films as claimed in claim 1, it is characterised in that:It is true in chamber when extracting vacuum Reciprocal of duty cycle is finally reached as 10-4~10-3Pa。
3. it is used for the processing method of PVD plated films as claimed in claim 1, it is characterised in that:During target is heated, root Heating-up temperature, heating-up temperature >=evaporating temperature, by the voltage for adjusting electron gun are set according to the evaporating temperature of selected target Electric current controls the heating-up temperature of electron gun.
4. it is used for the processing method of PVD plated films as claimed in claim 1, it is characterised in that:During target is heated, need To carry out under a vacuum, and one kind in oxygen or argon gas can be selected according to the species of target.
5. it is used for the processing method of PVD plated films as claimed in claim 1, it is characterised in that:During target is heated, root Heating-up temperature, heating-up temperature >=evaporating temperature are set according to the evaporating temperature of selected target.
6. a kind of reaction chamber for PVD plated films, including:It is reaction chamber body, electron gun crucible platform, vavuum pump, to be coated Product station, wherein product station to be coated is installed on the top of reaction chamber body, pacify in the bottom of reaction chamber body Fill electron gun crucible platform, the bottom connection vavuum pump of reaction chamber body.
7. it is used for the reaction chamber of PVD plated films as claimed in claim 6, it is characterised in that:Described product station to be coated At the uniform velocity rotate, be easy to plated film uniform.
8. it is used for the reaction chamber of PVD plated films as claimed in claim 6, it is characterised in that:On described electron gun crucible platform N number of groove, 20≤N≤30, for placing a variety of targets are set.
9. it is used for the reaction chamber of PVD plated films as claimed in claim 6, it is characterised in that:On described electron gun crucible platform It is rotatable that multiple grooves, which can be set, is easy to electron gun to realize and individually heats some target therein.
10. it is used for the reaction chamber of PVD plated films as claimed in claim 6, it is characterised in that:Described product station to be coated In " umbrella " structure, it is advantageously implemented product workpiece and is positioned over chamber roof in " triangle roof " formula, increases product in chamber Load capacity.
CN201710742344.3A 2017-08-25 2017-08-25 A kind of reaction chamber and processing method for PVD plated films Pending CN107620047A (en)

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CN110158037A (en) * 2019-06-27 2019-08-23 Oppo广东移动通信有限公司 Integral housing and preparation method thereof, electronic equipment and vacuum evaporation equipment
CN114737154A (en) * 2022-05-24 2022-07-12 深圳市嘉德真空光电有限公司 Vacuum coating reflective product and preparation process thereof
CN115125485A (en) * 2022-07-14 2022-09-30 北京同生科技有限公司 Preparation method of medium-wave infrared filter

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CN115125485A (en) * 2022-07-14 2022-09-30 北京同生科技有限公司 Preparation method of medium-wave infrared filter
CN115125485B (en) * 2022-07-14 2023-09-12 北京同生科技有限公司 Method for preparing medium wave infrared filter

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