CN101484966A - Apparatus for electron beam evaporation - Google Patents
Apparatus for electron beam evaporation Download PDFInfo
- Publication number
- CN101484966A CN101484966A CNA2007800256069A CN200780025606A CN101484966A CN 101484966 A CN101484966 A CN 101484966A CN A2007800256069 A CNA2007800256069 A CN A2007800256069A CN 200780025606 A CN200780025606 A CN 200780025606A CN 101484966 A CN101484966 A CN 101484966A
- Authority
- CN
- China
- Prior art keywords
- barrier
- evaporation
- electron beam
- evaporated
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005566 electron beam evaporation Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 133
- 238000001704 evaporation Methods 0.000 claims abstract description 99
- 230000008020 evaporation Effects 0.000 claims abstract description 89
- 230000004888 barrier function Effects 0.000 claims abstract description 51
- 238000010894 electron beam technology Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000003779 heat-resistant material Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 description 24
- 239000010410 layer Substances 0.000 description 18
- 239000002245 particle Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- NFGXHKASABOEEW-UHFFFAOYSA-N 1-methylethyl 11-methoxy-3,7,11-trimethyl-2,4-dodecadienoate Chemical compound COC(C)(C)CCCC(C)CC=CC(C)=CC(=O)OC(C)C NFGXHKASABOEEW-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3132—Evaporating
- H01J2237/3137—Plasma-assisted co-operation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明涉及一种电子束蒸发装置，其包括真空加工室(2)、产生借此加热待蒸发物料(5)的电子束(7)的轴向电子枪(6)、和设置在物料(5)和待镀膜基材(3)之间的隔挡(9)，该隔挡具有至少一个蒸发孔(10)，物料蒸气穿过该蒸发孔到达该基材(3)，其中，该隔挡(9)包括磁系统(14)，借助该磁系统，该电子束(7)可经过蒸发孔(10)被转向待蒸发物料(5)。
The invention relates to an electron beam evaporation device, which comprises a vacuum processing chamber (2), an axial electron gun (6) for generating an electron beam (7) whereby a material (5) to be evaporated is heated, and an axial electron gun (6) arranged on the material (5) and the barrier (9) between the substrate (3) to be coated, the barrier has at least one evaporation hole (10), and the material vapor passes through the evaporation hole to reach the substrate (3), wherein the barrier ( 9) Comprising a magnetic system (14) by means of which the electron beam (7) can be directed towards the material to be evaporated (5) via the evaporation hole (10).
Description
Technical field
For example the present invention relates to for anticorrosion, as the decorations layer, for the EMV shielding or for heat insulation and physical vapour deposition (PVD) application vacuum plating functional film layer on base material, exactly, relate to such evaporation source embodiment at this, wherein by with the electron beam heating evaporation material that axial electron gun sent, to produce steam.
Prior art
The evaporation source of the EB-PVD that is widely adopted has so-called horizontal electron gun, and in its electron beam production process, electron beam 270 degree turn to magnetic device and the crucible that evaporates material is housed and are integrated in mostly in the functional block of a compact conformation.
The price of this evaporation source is quite cheap, but it is subject to the highest beam power of about 20kW and the accelerating voltage of about 20kV, and then producible evaporation rate is also limited.In addition, real electron beam source (negative electrode and heating arrangements) is in the pressure stage of plating chamber and directly runs into the indoor steam of plating and gas (especially in course of reaction control).Thereby the plating room pressure must be by setting the size of vacuum pump to such an extent that be held in low value quite greatly, the instability when avoiding electron beam source work.
Is than higher but in technical elements EB-PVD variant (DE4428508A1) more efficiently by using axial electron gun with regard to obtaining with regard to required cost of investment, and it can be designed to beam power up to 300kW, the accelerating voltage vapour deposition method up to 60kV.This electron beam source by have be used to allow electron beam by and mostly be circular barrier and Processing Room little opening, that play the choked flow effect greatly and separate, and the high pressure vacuum pump that adds of usefulness is evacuated separately.For this reason, higher coating speed can be carried out and obtain to the evaporation operation also under plating room pressure condition with higher., especially at the manufacture field of high speed plating large area substrates (for example under the situation of band and plate), it is unworkable because of the indoor geometry situation of plating sometimes that electron beam direct is injected the vaporising device crucible.So axially electron gun is placed in horizontal installation site usually, electron beam is drawn towards the crucible that the evaporation material is housed by additional magnetic steering, and magnetic steering and axial electron gun are integrated in the vacuum-chamber wall.
This steering realizes by the hot-wire coil that has the pole shoe that constitutes magnetic field mostly, steering is main cost factor, it twists linearity and the electron beam focus that turns to magnetic field unfriendly, and its efficient obviously is subject to the selection of concrete material and the geometry of plating chamber locular wall, so steering all will be optimized again at every kind of improvement of evaporation layout mostly.
Also be that all heat evaporating devices of electron beam heating have the broad sender of the particle that evaporation material surface evaporated to distribution, up to almost tangential part.This means that quite a few steam flow that increases with the increase of distance between evaporation source and the base material is bombarding base material not, but arrive around the base material and deposit in so-called unordered rete mode there.Except associated plating material loss, unordered rete is in the indoor prolongation that also causes the pumpdown time of plating of the equipment of batch process in batches, and unordered rete means the risk of operation long-time stability for continuous production equipment.Therefore, must often remove unordered rete in these two kinds of equipment from the plating chamber, this is quite bothersome usually.
The steam flow density of heat evaporating device have evaporation material surface and evaporation particle sender between the sign angular relationship, this angular relationship is using under the simple scenario of small size vaporising device (compare with vaporising device to the spacing of base material with substrate sizes, the area coverage of evaporation source is relatively little) can be according to common cosine law:
Φ (α)=Φ
0Cos
n(α) formula 1
Explain.In this formula, Φ
0Expression is perpendicular to the steam flow density on evaporation material surface.For different hot evaporation coating methods, index n has characteristic value separately.For the high-velocity electron beam vaporising device, index is about 2.5.Directly obtain from formula 1, when the planar substrate that launches with small size vaporising device plating, the bed thickness in evaporation material normal to a surface passes the zone of breakthrough point of substrate plane is maximum, successively decreases with the lateral separation increase subsequently.
Therefore, in order on little base material, to obtain well-proportioned rete, usually process with recessed bending large area substrates seat, on this substrate holder, some base materials are arranged in the almost constant plane of the steam flow density of vaporising device top and can be in the fixed-site mode by plated films.This nearly equipment, method can't be used for large-area planar substrate.
If planar substrate, then the uniformity of thickness of deposited film can be enhanced by the distance that increases to vaporising device simply., this moment, the steam utilance reduced (ratio that is deposited on inventory and total inventory on the base material), and requirement (requiring residual gas to force down) and its size of plating chamber vacuum system increased because of this required structure space.
A kind of reality conforming method of uniform film thickness common, that be used for improving under the suitable situation of the distance of distance vaporising device on the large area substrates is, arrange that according to substrate sizes and in the mode of spatial spread the vaporising device of a plurality of small sizes, their density distribution of steam flow separately in substrate plane are suitable for stack.What come with the method is exactly higher equipment cost.
Especially under the situation of the apparatus for electron beam evaporation that adopts the reinforced axial electron gun of power, realized different resolution policies mostly.This resolution policy is that the area coverage that is filled with the crucible of evaporation material is matched with substrate sizes.By large-area, bidimensional and depend on and the electron beam dynamic steering of time also turn to magnetic field sometimes, can control the local energy of injecting evaporation material surface region from electron beam, and then control local evaporation rate in conjunction with static state.Especially, if the evaporation material is not distillation evaporation, but form the molten bath that the heat balance because of conduction and convection current spreads out, then this method causes the higher base material heat load that caused by thermal radiation.
Sometimes being used for by feeding method is that plating chamber between vaporising device and base material is provided with special-purpose barrier by the more equally distributed method of the another kind of the thickness of the base material of plating, this barrier has different opening size (at the base material center is little opening size, and opening size increases progressively to the edge) on the base material throughput direction., so-called ＂ dog bone shape barrier ＂ also causes the further reduction of steam utilance, because the material held back of heated barrier can't not return vaporising device.
The characteristics of this electron beam evaporation plating method are, mainly according to the bombardment angle and the number of nuclear charges thereof of beam bombardment evaporation material, are not to absorb a certain amount of electronics by the evaporation material, but by a certain amount of electronics of its backscattering.Back-scattered electron carries considerable energy, this energy be take out the operation from evaporation and join in the middle of the scarcely desirable base material heat load.Therefore, in order to make back-scattered electron away from thermosensitive type or charge sensitive type base material, the additional mechanism providing additional operation that also must will be used for producing the magnetic screen field is integrated into the plating chamber, and this magnetic screen field is also referred to as " magnetic falls ".
The typical kinetic energy E of the particle that produces by heat steam
KinProportional according to following formula and evaporating temperature TV:
E
Kin=k
BT
VFormula 2
At k
BUnder the situation for the Bo Ciman constant, for example for evaporating temperature T
V=3000K, the motion that obtains characteristic can E
Kin=0.25eV.
This motion can be little than the particle that occurs in the available magnetron sputtering PVD method surpass 1 order of magnitude.Logical ground, thermal evaporation especially often must can make up by reinforcing mechanisms with additional particle under the high acceleration situation, to obtain a plurality of anti-compacted zones that adhere to.A kind of method of founding is exactly so-called " plasma-activated evaporation " (DE 4336681A1).In this case, by the additional plasma source between vaporising device and base material (being arc discharge or HF source mostly), produce fine and close plasma.When crossing plasma, the part evaporation particle be ionized and because the electrical potential difference between base material and the group's plasma (under simple scenario by the self-bias effect, sometimes by applying the outer bias-voltage (US3 that strengthened, 791,852)), in the edge plasma layer, quicken to shift to base material, the result, the average energy of condensation particle improves, even if the condensation rate height, film quality also obviously improves.
The shortcoming of this arrangement is that part has been lost the important technical advantage of heat evaporating device, promptly has the base material heat load than sputtering method little many (2 times to 3 times) with regard to identical dynamic plating rate.This is because certainly exist high plasma density and produce additional base material heat load thus in this activating mechanism near base material.
Summary of the invention
Thereby, the present invention is based on above-mentioned technical problem, a kind of device is provided, can overcome prior art shortcoming in the apparatus for electron beam evaporation by this device.Especially compared with prior art, this device should be able to realize that compactness and low mechanical structure, the plated film of cost are preserved for a long time, few maintenance, minimum to the magnetic disturbance of plating chamber, when the uniform film thickness unanimity of efficiently utilizing steam, unordered rete base material heat load minimum few, that cause by thermal radiation or back-scattered electron, vaporising device on the base material to the closely spaced situation of base material, crucible secondary fill material, form splashing and general mounting means still less.
Obtained the solution of this technical problem by theme with claim 1 feature.Dependent claims has provided other favourable design of the present invention.
Apparatus for electron beam evaporation of the present invention comprise the vacuum Processing Room, produce the axial electron gun of the electron beam heat material to be evaporated whereby and be arranged on material and base material to be coated between barrier, this barrier has evaporation apertures, the material steam sees through evaporation apertures and arrives base material, wherein, this barrier comprises magnetic system, by magnetic system, electron beam can be diverted material to be evaporated through evaporation apertures.
Material evaporation need not crucible just can finish the distillation material of rotating cylindrical body (for example for), or finish by a container, this container for example can constitute according to the form of continuous feed formula water-cooled copper crucible again, perhaps constitute according to the form of heat-insulating block (so-called hot crucible, have or not with for example by the feed that enters a mechanism).
In a preferred embodiment, barrier is arranged between the container and base material that the evaporation material is housed, several centimeters above upper container edge, and barrier constitutes according to the form of the horizontal composite decking of container, its at vessel side by first heat-resistant material layer of capacity of heat transmission difference (graphite carpet veneer for example, particle layer in bulk, the ruckle layer) and just above ground floor, the second water-cooled material layer that the capacity of heat transmission is strong (copper layer for example, pure graphite linings, aluminium lamination, stainless steel layer) constitutes, in the second layer, be provided with the magnetic steering (the rectangular coil or the Permanentmagnet bar that comprise energising) that is used for electron beam.As alternative, cover plate also can resemble and directly be placed on the container a kind of container cover.
So determine the size of the adiabatic ground floor of composite decking, promptly owing to evaporate the heat input (thermal radiation on material surface in other words from real evaporating point, back-scattered electron and heat of liquefaction) or because such temperature appears in the extra heating (for example pharoid or suitable to suitably making once electron beam be diverted to the absorber that links to each other with composite decking) in its bottom side, this temperature is high enough to avoid evaporating material bed appearance on the one hand (under the situation of evaporation material fusion, for example because vapour condensation, and/or container is dripped back/flowed back to formed liquid phase), but this temperature is low on the other hand to fire damage not occurring.In addition, the second strong water-cooled material layer of the capacity of heat transmission that is positioned at the ground floor top plays the effect of the radiator of the end face that cools off adiabatic ground floor in accordance with regulations, perhaps adds the radiant heat transition zone between the two.The radiant heat transition zone for example can be realized by cushion block between the two.
Also have one or more openings in barrier, the steam that is formed in the container can pass described opening and arrive base material.These openings are also referred to as evaporation apertures, they are formation like this (the simplest be exactly into rectangle) and definite size, concerning sending the numerous evaporation particles that send that scatter on the evaporation material surface of steam, have only the evaporation particle of aiming at base material could pass through evaporation apertures, and remaining evaporation particle is held back by barrier.
But, except tabular barrier, the barrier in apparatus of the present invention for example also can become hood-like and be arranged on the top of material to be evaporated.Following execution mode also is feasible, and material to be evaporated is partly surrounded or surrounded fully to its barrier.
But, for will be by the base material of feeding method plated film, also can so for example form the evaporation apertures of barrier by flap, thereby especially from the part steam flow in vapour density distribution center district just steam send the surface above be trapped within the vaporising device, and do not arrive plating chamber or base material.This for example can realize that, lid can arrange so that under the situation that transfer is suitably arranged, lid also can be heated thus by the primary electron beam bombardment by so-called lid here.Be deposited on the material that covers and break away from the lid of heat by distillation or fusion drippage at this moment, thereby cover the material that is cleaned and is left at first and be supplied to the evaporation operation again.
Evaporation apertures in apparatus of the present invention constitutes the electron beam incident passage simultaneously.Just on the light incident side edge of evaporation apertures and opposite edges and be provided with many magnets (permanent magnet or magnetic coil) far enough from the plating locular wall simultaneously, their produce the high-intensity magnetic field (chief component is at horizontal plane and perpendicular to the electron beam incident direction) of localization.For this reason, under the situation that suitably reaches 90 degree steering angles, realized the very little track radius of curvature in part of primary electron beam.Turn in the known mechanisms that directly is placed in magnetic system in axial electron gun and/or the locular wall at electron beam, do not accomplish to pass the like this little electron beam radius of curvature of evaporation apertures.
In one embodiment, electron beam turns to magnetic system to be made up of two parts, and one of them part looks up from electron radiation side and is positioned at before the evaporation apertures, and one other component is positioned at after the evaporation apertures.Can so determine the size away from the magnetic system part of axial electron gun layout, this part mainly influences back-scattered electron and the secondary electron that is similarly sent by evaporation material surface with the light reflection law, but not too strong to the influence of primary electron beam.In addition, because the power spectrum main region of secondary electron is starkly lower than primary electron beam on energy, so, the track radius of curvature also more much smaller may mainly occur than primary electron beam for these electronics.Therefore, most back-scattered electron is trapped within the zone of evaporating between material surface and the barrier.
If finish evaporation by the crucible of secondary fill material, the evaporation material surface region that then is not located immediately at the evaporation apertures below is used to newly evaporate the supply of material.At this moment, secondary fill area surface should separate by heat-resisting chemical inertness barrier and main evaporation zone surface, so that make possible floating light impurity in the inserts away from the electron beam direct active region in melt stage.
Can so constitute vaporising device, the conduction of evaporation material is connected perhaps and is realized by connecting container and barrier, and for example to become the gas discharge of arc discharge form be the basis of steam ionization.Can facilitate the formation of discharge and stable by an integrated suitable electron donor (for example Fu Jia hollow cathode, with the tungsten filament of current flow heats or the lid that can be heated by electron beam in evaporation apertures, as thermionic emission mechanism).At this moment, the acceleration of the ion that is produced is finished by near the electric field that appears in non-uniform magnetic-field the evaporation apertures.
Realized apparatus for electron beam evaporation in this way, turning to magnetic field directly to be integrated in the vaporising device building block and suitably blocked wherein in the compact conformation mode, thus seldom or even do not interfere the locular wall and the installation of plating chamber.For this reason, comprise material to be evaporated (with or without container) and have evaporation apertures and will become universal component with the vaporising device that is integrated in the barrier of magnetic system wherein, this universal component as far as possible with vacuum chamber in concrete at that time installation site irrelevant, and can be matched with different plating chambers and allow the horizontally mounted of electron beam big gun that general value must expect in simple mode.
In addition, according to of the present invention, near the barrier the material to be evaporated or within realize that the direction that electron beam turns to the way in magnetic field also to allow to control back-scattered electron distributes or track.Under simple scenario, this turns to magnetic field to be used for by making back-scattered electron turn to locular wall or barrier back-scattered electron shielding base material relatively, and the result will reduce the base material heat load.
, also can expect following magnet arrangement and the track that causes thus, wherein back-scattered electron is almost completely stayed in the zone of evaporating between material and the crucible cover and is emitted its energy there valuably, and this causes the improvement of the vaporising device heat efficiency.
In addition, because the density that low energy back-scattered electron in evaporating area and secondary electron have increase, so near the directly phenomenon of the ionization evaporation material of evaporation particle occurs.Because magnetic field is inhomogeneous, so may form vertical potential gradient above vaporising device, this vertical potential gradient causes particle to quicken to shift to base material.And partly realize activated partial by the ion that quickens in the steam in aforesaid, the interlayer between plasma and base material, this mechanism does not require the high-density plasma on base material, like this, increase the improvement that has realized film quality under the not many situation in heat load.
The evaporation apertures that suitably forms in barrier allows electron beam directive evaporation material surface and steam to flow out simultaneously.Since be integrated on the barrier or among the special arrangement and the size of electron beam magnetic steering, it is very little that these openings can keep.Realized such steam flow whereby, wherein most of material steam passes evaporation apertures and arrives base material, rather than around the base material.Like this, realized that on the one hand long operating time is arranged under the situation of certain material reserves, suppressed to form unordered rete on the other hand, unordered rete just means long maintenance break period.
That suitably form as the barrier part that is used to form evaporation apertures and can be allowed to block some the steam flow part that produces by evaporation source by the flap that electron beam heats.Like this, can so adjust (evening up to a certain extent) outside vaporising device, need not the steam flow density distribution that the addition thereto according to the common cosine distribution of formula 1 just occurs, promptly will be by the evaporation source of the some below the expansion base material of feeding method plated film with by the desired thickness horizontal homogeneity in application scenario at that time for being arranged on, can to the little many situations of spacing of base material, process at vaporising device, can dwindle the size of plating chamber thus as far as possible.
The steam flow part that barrier is held back does not lose as the unordered rete in the vacuum chamber this moment, but stays in the vaporising device, and this also causes the raising of steam utilance.
Because the intact part of barrier plays the radiation shield effect and relative base material shelters from the crucible of vaporising device, so reduced the base material heat load.
Especially concerning the container that the material secondary is filled, wherein the material secondary is filled because of the impurity with high steam pressure in the inserts is easy to aggravation formation and is splashed, that be covered and can be used as the district that sends into of inserts by the separated crucible of barrier and electron beam direct active region district, the material of being sent into before real evaporation earlier through vacuum purification effect (for example by the degassing, fractional distillation, precipitation or floating).Perhaps it is harmless that the material that occur this moment splashes, because splash is held back by barrier and can't be arrived base material, the result, realized not having the steady-state evaporation of splashing for base material to be coated, even if the crucible that the material secondary is filled, its plated film duration is not restricted because of the material reserves in the crucible.
Description of drawings
Below, will describe the present invention in conjunction with the preferred embodiments in detail, wherein:
Fig. 1 is the schematic diagram of expression apparatus of the present invention;
Fig. 2 is the schematic diagram that expression has the barrier of evaporation apertures.
Embodiment
Fig. 1 schematically illustrates device 1, by described device, be in vacuum Processing Room 2 be evaporation copper film (layer) on the polycarbonate plate at base material 3, here, the arrow of base material 3 tops is represented the base material direction of motion.Copper material 5 to be evaporated is arranged in black-fead crucible 4, and the copper material will be heated by the electron beam 7 that axial electron gun 6 is produced.For thermal insulation, crucible 4 is embedded in the layer 8 that is made of quartzy gravel.
Be provided with into the barrier 9 of crucible 4 cover plate forms above crucible 4, this barrier has evaporation apertures 10, and the evaporation particle 11 of copper can be shifted to base material 3 through the evaporation apertures liter from crucible 4.Barrier 9 comprises two-layer 12 and 13.Layer 12 graphite felt by 40 millimeters thick towards copper material 5 constitute.Layer 13 is water-cooled copper plates of 30 millimeters thick.Copper coin comprises magnetic system 14, and it is made of a plurality of Permanentmagnet bars 15 that are added into 20 millimeters thicknesses in the copper coin, and these Permanentmagnet bar guiding electron beams 7 pass evaporation apertures 10, turn to copper material 5 surfaces, so that evaporation copper material.Because the position of the Permanentmagnet bar 15 in the barrier 8 is close to evaporation apertures 10, so can realize the small curvature radius of electron beam 7 through evaporation apertures 10.
Because barrier 9 constitutes with the form of crucible 4 lids, so the evaporation particle 11 of copper can only leave crucible 4 through evaporation apertures 10 towards base material 3, the result, prevent from the one hand to form " unordered rete ", and on the other hand, the overwhelming majority of course of work heat is left in the zone between cover plate 9 and the crucible 4, and this causes higher operating efficiency.
In quartz conglomerate layer 8, below evaporation apertures 10, add other Permanentmagnet bar 16, the effect of these Permanentmagnet bars is to make the surface of electron beam 7 with steeper angle bombardment copper material 5.All Permanentmagnet bars 15 and 16 all are orientated according to identical polar.
Fig. 2 has illustrated the barrier 20 that has evaporation apertures 21 in schematic top plan view, it also can be used in the device shown in Figure 1.Arrow is also indicated the direction of motion of base material to be coated here.Barrier 20 has tongue 22, and on the base material direction of motion, this tongue makes the opening size in hole 21 dwindle to the center.So, up-flow is blocked to the center of the steam flow of base material, thereby has obtained uniform layer thickness distribution at whole base material width.Following measure is favourable, and material heating can temporarily be turned to tongue 22 with electron beam, heats tongue whereby, and the result is deposited on material steam on the tongue 22 and liquefies on tongue and return the container that is used for material to be evaporated.
In device of the present invention, it is important not resembling in prior-art devices heavily to drip back material in the container, this is because the electron beam in apparatus of the present invention has less radius of curvature, thus only need littler evaporation apertures, thereby reduced by returning the splashing towards base material that material causes.
Claims (19)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200610031244 DE102006031244B4 (en) | 2006-07-06 | 2006-07-06 | Device for evaporating a material by means of an electron beam and for depositing the vapor on a substrate |
| DE102006031244.9 | 2006-07-06 | ||
| PCT/EP2007/005715 WO2008003425A1 (en) | 2006-07-06 | 2007-06-28 | Apparatus for electron beam evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101484966A true CN101484966A (en) | 2009-07-15 |
| CN101484966B CN101484966B (en) | 2012-05-30 |
Family
ID=38421460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800256069A Expired - Fee Related CN101484966B (en) | 2006-07-06 | 2007-06-28 | Apparatus for electron beam evaporation |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2038912A1 (en) |
| JP (1) | JP5150626B2 (en) |
| CN (1) | CN101484966B (en) |
| DE (1) | DE102006031244B4 (en) |
| WO (1) | WO2008003425A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312198A (en) * | 2010-06-30 | 2012-01-11 | 上方能源技术(杭州)有限公司 | Evaporation source and evaporation coating device |
| CN103983381B (en) * | 2014-05-30 | 2017-01-25 | 北京卫星环境工程研究所 | System and method for testing single particle adhesive force and electric quantity under vacuum condition |
| CN107620047A (en) * | 2017-08-25 | 2018-01-23 | 苏州安江源光电科技有限公司 | A kind of reaction chamber and processing method for PVD plated films |
| CN110117772A (en) * | 2019-06-14 | 2019-08-13 | 费勉仪器科技（上海）有限公司 | A kind of overstable three electrodic electrons beam evaporation source |
| CN111699276A (en) * | 2017-12-06 | 2020-09-22 | 亚利桑那薄膜研究有限责任公司 | Additive manufacturing system and method for deposition of metal and ceramic materials |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009014891B4 (en) | 2009-03-25 | 2012-12-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device for vaporizing a material in a vacuum chamber |
| EP2768012B1 (en) * | 2013-01-30 | 2017-06-28 | Fraunhofer-ges. zur Förderung der Angewandten Forschung E.V. | Method of detaching a disc-shaped single crystal from a base body using an electron beam |
| EP4379087A3 (en) * | 2013-03-15 | 2024-09-11 | RTX Corporation | Deposition apparatus and methods |
| DE102018131904A1 (en) * | 2018-12-12 | 2020-06-18 | VON ARDENNE Asset GmbH & Co. KG | Evaporation arrangement and method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3345059A (en) * | 1965-03-12 | 1967-10-03 | United States Steel Corp | Crucible for holding molten metal |
| DE1814142A1 (en) * | 1967-12-13 | 1969-07-31 | Lokomotivbau Elektrotech | Device for vapor deposition in a vacuum of large areas |
| DE2519537C2 (en) | 1975-05-02 | 1982-11-04 | Leybold-Heraeus GmbH, 5000 Köln | Electron beam device for heating, melting and evaporation purposes with deflection systems |
| JPS63247358A (en) * | 1987-04-03 | 1988-10-14 | Matsushita Electric Ind Co Ltd | Apparatus for producing thin metallic film |
| US4947404A (en) * | 1987-11-16 | 1990-08-07 | Hanks Charles W | Magnet structure for electron-beam heated evaporation source |
| JPH0294250U (en) * | 1989-01-17 | 1990-07-26 | ||
| DE4225352C1 (en) | 1992-07-31 | 1993-11-18 | Leybold Ag | Installation and method for reactive deposition of metal cpd. coatings - with cathode heated to temp. of plasma ignition, allowing high-strength corrosion- resistant coatings to be produced |
| DE4336681C2 (en) * | 1993-10-27 | 1996-10-02 | Fraunhofer Ges Forschung | Method and device for plasma-activated electron beam evaporation |
| DE4336680C2 (en) * | 1993-10-27 | 1998-05-14 | Fraunhofer Ges Forschung | Process for electron beam evaporation |
| DE4342574C1 (en) * | 1993-12-14 | 1995-04-13 | Hilmar Weinert | Band-type vaporisation apparatus |
-
2006
- 2006-07-06 DE DE200610031244 patent/DE102006031244B4/en not_active Expired - Fee Related
-
2007
- 2007-06-28 CN CN2007800256069A patent/CN101484966B/en not_active Expired - Fee Related
- 2007-06-28 EP EP07764905A patent/EP2038912A1/en not_active Withdrawn
- 2007-06-28 JP JP2009516988A patent/JP5150626B2/en not_active Expired - Fee Related
- 2007-06-28 WO PCT/EP2007/005715 patent/WO2008003425A1/en active Application Filing
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312198A (en) * | 2010-06-30 | 2012-01-11 | 上方能源技术(杭州)有限公司 | Evaporation source and evaporation coating device |
| CN102312198B (en) * | 2010-06-30 | 2013-08-21 | 上方能源技术(杭州)有限公司 | Evaporation source and evaporation coating device |
| CN103983381B (en) * | 2014-05-30 | 2017-01-25 | 北京卫星环境工程研究所 | System and method for testing single particle adhesive force and electric quantity under vacuum condition |
| CN107620047A (en) * | 2017-08-25 | 2018-01-23 | 苏州安江源光电科技有限公司 | A kind of reaction chamber and processing method for PVD plated films |
| CN111699276A (en) * | 2017-12-06 | 2020-09-22 | 亚利桑那薄膜研究有限责任公司 | Additive manufacturing system and method for deposition of metal and ceramic materials |
| CN110117772A (en) * | 2019-06-14 | 2019-08-13 | 费勉仪器科技（上海）有限公司 | A kind of overstable three electrodic electrons beam evaporation source |
| CN110117772B (en) * | 2019-06-14 | 2024-03-15 | 费勉仪器科技（上海）有限公司 | Ultra-stable three-electrode electron beam evaporation source |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5150626B2 (en) | 2013-02-20 |
| CN101484966B (en) | 2012-05-30 |
| DE102006031244A1 (en) | 2008-01-10 |
| EP2038912A1 (en) | 2009-03-25 |
| WO2008003425A1 (en) | 2008-01-10 |
| DE102006031244B4 (en) | 2010-12-16 |
| JP2009542900A (en) | 2009-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101484966B (en) | Apparatus for electron beam evaporation | |
| US4724060A (en) | Sputtering apparatus with film forming directivity | |
| US3562141A (en) | Vacuum vapor deposition utilizing low voltage electron beam | |
| US5302266A (en) | Method and apparatus for filing high aspect patterns with metal | |
| US7405415B2 (en) | Ion source with particular grid assembly | |
| JPH08505434A (en) | Equipment for plasma-assisted fast electron beam evaporation | |
| JPH08176807A (en) | Method and apparatus for vapor-depositing highly ionized medium in electromagnetically controlled environment | |
| TWI242049B (en) | Vacuum arc evaporation source and vacuum arc vapor deposition apparatus | |
| JPH10280135A (en) | Thin coating vapor depositing device using cathode arc discharge | |
| US3649502A (en) | Apparatus for supported discharge sputter-coating of a substrate | |
| JPH028365A (en) | Sputter coating apparatus | |
| CN102808155A (en) | Electron bombardment type evaporation source system | |
| KR101370326B1 (en) | Evaporation Deposition Apparatus | |
| KR101473345B1 (en) | Evaporation Deposition Apparatus | |
| US3492215A (en) | Sputtering of material simultaneously evaporated onto the target | |
| JP2005502783A5 (en) | ||
| US3104178A (en) | Evaporative coating method | |
| US3777704A (en) | Apparatus for vaporizing metal on a substratum | |
| JPH0456761A (en) | Thin film forming device | |
| JP2001140073A (en) | Back face cooling gas for self-sputtering | |
| KR20140022356A (en) | Evaporation deposition apparatus | |
| JPS63472A (en) | Vacuum device for forming film | |
| JPH0770741A (en) | Evaporation source | |
| JP5757991B2 (en) | Targets for spark deposition with spatially limited spark diffusion | |
| JP2021505776A (en) | Systems and methods for additive manufacturing for the adhesion of metal and ceramic materials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20130628 |