TW201939622A - Semiconductor device production method and film-shaped adhesive - Google Patents

Semiconductor device production method and film-shaped adhesive Download PDF

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Publication number
TW201939622A
TW201939622A TW108103014A TW108103014A TW201939622A TW 201939622 A TW201939622 A TW 201939622A TW 108103014 A TW108103014 A TW 108103014A TW 108103014 A TW108103014 A TW 108103014A TW 201939622 A TW201939622 A TW 201939622A
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film
semiconductor element
adhesive
shaped adhesive
component
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TW108103014A
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Chinese (zh)
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TWI793255B (en
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山崎智陽
中村祐樹
橋本慎太郎
菊地健太
舛野大輔
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日商日立化成股份有限公司
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Publication of TWI793255B publication Critical patent/TWI793255B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

The present invention pertains to a semiconductor device production method which is provided with: a first die bonding step for electrically connecting a first semiconductor element onto a substrate via a first wire; a lamination step for sticking a film-shaped adhesive, the shear modulus of which is 1.5MPa or less at 150 DEG C, onto one surface of a second semiconductor element which has a larger surface area than does the first semiconductor element; and a second die bonding step for positioning the second semiconductor element to which the film-shaped adhesive has been stuck in a manner such that the film-shaped adhesive covers the first semiconductor element, and embedding the first wire and the first semiconductor element in the film-shaped adhesive by pressure-bonding the film-shaped adhesive.

Description

半導體裝置的製造方法及膜狀接著劑Method for manufacturing semiconductor device and film-shaped adhesive

本發明是有關於一種半導體裝置的製造方法及膜狀接著劑。The present invention relates to a method for manufacturing a semiconductor device and a film-shaped adhesive.

已知有一種可獲得能夠填充因半導體裝置中的基板的配線、附設於半導體晶片的線（wire）等所產生的凹凸的線埋入型半導體裝置的接著片（例如專利文獻1及專利文獻2）。為了於凹凸填充時顯現高流動性，該接著片含有熱硬化性成分作為主成分。There is known an adhesive sheet capable of filling a wire-embedded semiconductor device capable of filling unevenness caused by wiring of a substrate in a semiconductor device, wires attached to a semiconductor wafer, and the like (for example, Patent Documents 1 and 2). ). In order to exhibit high fluidity during uneven filling, this adhesive sheet contains a thermosetting component as a main component.

近年來，此種線埋入型半導體裝置的動作的高速化受到重視。先前，將控制半導體裝置的動作的控制器晶片（controller chip）配置於積層的半導體元件的最上段，但為了實現動作的高速化，正在開發於最下段配置控制器晶片的半導體裝置的封裝技術。作為此種封裝的形態之一，使積層為多段的半導體元件中，壓接第二段的半導體元件時所使用的膜狀接著劑較厚，而於該膜狀接著劑內部埋入控制器晶片的封裝體受到矚目。對於用於此種用途的膜狀接著劑而言，要求可埋入控制器晶片、連接於控制器晶片的線、因基板表面的凹凸而產生的階差等的高流動性。
[現有技術文獻]
[專利文獻]In recent years, attention has been paid to speeding up the operation of such a line-embedded semiconductor device. Previously, a controller chip that controls the operation of a semiconductor device has been placed on the uppermost stage of a stacked semiconductor element. However, in order to increase the speed of operation, packaging technology for a semiconductor device with a controller chip placed on the lower stage is being developed. As one of the forms of such a package, in a semiconductor device with a multi-layer build-up, the film-shaped adhesive used when crimping the semiconductor device in the second stage is thicker, and the controller chip is embedded in the film-shaped adhesive. The package has attracted attention. The film-like adhesive used for such applications requires high fluidity such as being able to be embedded in a controller wafer, a wire connected to the controller wafer, and a step due to unevenness on the substrate surface.
[Prior Art Literature]
[Patent Literature]

專利文獻1：國際公開第2005/103180號
專利文獻2：日本專利特開2009-120830號公報Patent Document 1: International Publication No. 2005/103180 Patent Document 2: Japanese Patent Laid-Open No. 2009-120830

[發明所欲解決之課題]
然而，如專利文獻1及專利文獻2所記載的接著片般，若使用特徵為僅硬化前的流動性高的接著片，則存在伴隨半導體元件的薄型化，於硬化後半導體裝置整體容易翹曲的問題。另外，於使用該接著片的壓接時產生空隙的情況下，存在難以在先前的步驟內將其去除的問題。因此現狀為，為了確保所獲得的半導體裝置的連接可靠性，需要進一步的研究。再者，尤其是關於後者的空隙的去除，大致可藉由另行設置利用加壓烘箱等進行加熱及加壓的步驟而達成。然而，藉由步驟數的增加，與通用品種相比，前置時間（lead time）增加。[Problems to be Solved by the Invention]
However, like the adhesive sheet described in Patent Documents 1 and 2, if an adhesive sheet having high fluidity before curing is used, there is a reduction in thickness of the semiconductor element and the entire semiconductor device is easily warped after curing. The problem. In addition, when voids are generated during pressure bonding using the adhesive sheet, there is a problem that it is difficult to remove them in a previous step. Therefore, the current situation is that in order to ensure the connection reliability of the obtained semiconductor device, further research is required. In addition, the removal of the voids in the latter can be generally achieved by separately providing a step of heating and pressing using a pressure oven or the like. However, with the increase in the number of steps, the lead time is increased compared to the general variety.

因此，本發明的目的在於提供一種能夠獲得抑制前置時間的增加、並且連接可靠性優異的半導體裝置的半導體裝置的製造方法。另外，本發明的目的在於提供一種該製造方法中可使用的膜狀接著劑。
[解決課題之手段]Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device capable of obtaining a semiconductor device that suppresses an increase in lead time and is excellent in connection reliability. Another object of the present invention is to provide a film-like adhesive that can be used in the production method.
[Means for solving problems]

本發明提供一種半導體裝置的製造方法，其包括：第一黏晶（die bond）步驟，將第一半導體元件經由第一導線而電性連接於基板上；層壓步驟，於較第一半導體元件的面積更大的第二半導體元件的單面上，貼附150℃下的剪切彈性係數為1.5 MPa以下的膜狀接著劑；以及第二黏晶步驟，以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件，並壓接膜狀接著劑，藉此而將第一導線及第一半導體元件埋入膜狀接著劑。The invention provides a method for manufacturing a semiconductor device, which includes: a first die bond step, electrically connecting a first semiconductor element to a substrate via a first wire; a laminating step, comparing the first semiconductor element A film-shaped adhesive with a shear modulus of 1.5 MPa or less at 150 ° C. is attached to one side of a second semiconductor element having a larger area; and a second bonding step covers the first semiconductor with the film-shaped adhesive. In the device mode, a second semiconductor element to which a film-shaped adhesive is attached is placed, and the film-shaped adhesive is pressure-bonded, whereby the first lead and the first semiconductor element are buried in the film-shaped adhesive.

根據本發明，能夠獲得抑制前置時間的增加，並且連接可靠性優異的半導體裝置。更具體而言，藉由使用150℃下的剪切彈性係數為1.5 MPa以下的膜狀接著劑，尤其可利用作為後步驟的密封步驟來消除第二黏晶步驟中產生的空隙（孔隙）。藉此，無需另外的用於消除空隙的特別的製程，前置時間不會增加。According to the present invention, it is possible to obtain a semiconductor device that is excellent in connection reliability while suppressing an increase in lead time. More specifically, by using a film-shaped adhesive having a shear modulus of 1.5 MPa or less at 150 ° C., it is possible to eliminate voids (voids) generated in the second sticking step, in particular, by using the sealing step as a subsequent step. This eliminates the need for a special process for eliminating voids, and the lead time does not increase.

本發明中，所謂150℃下的剪切彈性係數是指藉由以下方式而獲得者：一邊以頻率1 Hz對膜狀接著劑賦予5%的應變，一邊以5℃/分鐘的升溫速度自室溫升溫至125℃並保持1小時後，以5℃/分鐘的升溫速度進而升溫至150℃並保持45分鐘後，使用動態黏彈性測定裝置進行測定。In the present invention, the shear elasticity coefficient at 150 ° C is obtained by the following method: while applying a strain of 5% to the film-shaped adhesive at a frequency of 1 Hz, the temperature is raised from room temperature at a temperature increase rate of 5 ° C / min. After the temperature was raised to 125 ° C. and held for 1 hour, the temperature was further increased to 150 ° C. at a temperature increase rate of 5 ° C./minute and held for 45 minutes, and then measured using a dynamic viscoelasticity measuring device.

本發明中，較佳為膜狀接著劑的硬化後的170℃～190℃下的拉伸彈性係數為15 MPa以下。藉由膜狀接著劑於硬化後為低彈性，而能夠於密封步驟時獲得良好的埋入性及應力緩和性。例如，於使用薄型的第二半導體元件的情況下，亦可抑制膜狀接著劑硬化後的半導體裝置的翹曲。藉此，容易獲得半導體裝置的應力得到緩和，顯示出良好的連接可靠性的半導體裝置。In the present invention, the tensile elastic modulus at 170 ° C to 190 ° C of the film-shaped adhesive after curing is preferably 15 MPa or less. Since the film-like adhesive has low elasticity after curing, good embedding properties and stress relaxation properties can be obtained during the sealing step. For example, when a thin second semiconductor element is used, warping of the semiconductor device after the film-shaped adhesive is cured can also be suppressed. Thereby, it is easy to obtain a semiconductor device in which the stress of the semiconductor device is relaxed and a good connection reliability is exhibited.

本發明中，較佳為膜狀接著劑的80℃下的剪切黏度為15000 Pa·s以下。藉此，容易獲得良好的埋入性。In the present invention, the shear viscosity at 80 ° C. of the film-shaped adhesive is preferably 15,000 Pa · s or less. This makes it easy to obtain good embedding properties.

本發明中，較佳為膜狀接著劑包含丙烯酸樹脂及環氧樹脂。藉由併用熱塑性成分及熱硬化成分，而容易獲得良好的埋入性、熱硬化性及應力緩和性。In the present invention, the film-shaped adhesive preferably contains an acrylic resin and an epoxy resin. By using a thermoplastic component and a thermosetting component together, it is easy to obtain good embedding properties, thermosetting properties, and stress relaxation properties.

本發明中，較佳為丙烯酸樹脂包含重量平均分子量為10萬～50萬的第一丙烯酸樹脂、及重量平均分子量為60萬～100萬的第二丙烯酸樹脂，且以丙烯酸樹脂的總質量為基準，第一丙烯酸樹脂的含量為50質量%以上。藉由以所述方式擴展分子量分佈的幅度，應力緩和性提升，容易減少硬化後的基板的翹曲。另外，容易在維持成膜性及接著性的狀態下提升埋入性。In the present invention, the acrylic resin preferably includes a first acrylic resin having a weight average molecular weight of 100,000 to 500,000 and a second acrylic resin having a weight average molecular weight of 600,000 to 1 million, and is based on the total mass of the acrylic resin. The content of the first acrylic resin is 50% by mass or more. By expanding the width of the molecular weight distribution in the above-mentioned manner, stress relaxation is improved, and warpage of the substrate after curing is easily reduced. In addition, it is easy to improve the embedding property while maintaining the film-forming property and the adhesive property.

本發明中，較佳為膜狀接著劑包含無機填料及有機填料的至少一者。藉此，膜狀接著劑的操作性等進一步提升，並且可獲得更良好的剪切彈性係數、接著力等機械特性。In the present invention, the film-shaped adhesive preferably contains at least one of an inorganic filler and an organic filler. Thereby, the operability and the like of the film-shaped adhesive are further improved, and mechanical properties such as a better shear modulus and adhesive force can be obtained.

另外，本發明提供一種膜狀接著劑，其於第一半導體元件經由第一導線而電性連接於基板上，並且於第一半導體元件上壓接較第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中，用於壓接第二半導體元件並且埋入第一導線及第一半導體元件，且150℃下的剪切彈性係數為1.5 MPa以下。藉由使用本發明的膜狀接著劑，能夠獲得抑制前置時間的增加，並且連接可靠性優異的半導體裝置。In addition, the present invention provides a film-shaped adhesive, which is electrically connected to a substrate on a first semiconductor element via a first wire, and is crimped on the first semiconductor element to a second semiconductor element having a larger area than the first semiconductor element. In a semiconductor device made of a semiconductor element, the second semiconductor element is crimped and the first lead and the first semiconductor element are embedded, and the shear elastic coefficient at 150 ° C is 1.5 MPa or less. By using the film-shaped adhesive of the present invention, it is possible to obtain a semiconductor device which is excellent in connection reliability while suppressing an increase in lead time.

本發明的膜狀接著劑中，較佳為硬化後的170℃～190℃下的拉伸彈性係數為15 MPa以下。In the film-like adhesive of the present invention, the tensile elastic modulus at 170 ° C to 190 ° C after curing is preferably 15 MPa or less.

本發明的膜狀接著劑中，較佳為80℃下的剪切黏度為15000 Pa·s以下。In the film-like adhesive of the present invention, the shear viscosity at 80 ° C. is preferably 15,000 Pa · s or less.

本發明的膜狀接著劑較佳為包含丙烯酸樹脂及環氧樹脂。The film-shaped adhesive of the present invention preferably contains an acrylic resin and an epoxy resin.

本發明的膜狀接著劑中，較佳為丙烯酸樹脂包含重量平均分子量為10萬～50萬的第一丙烯酸樹脂、及重量平均分子量為60萬～100萬的第二丙烯酸樹脂，且以丙烯酸樹脂的總質量為基準，第一丙烯酸樹脂的含量為50質量%以上。In the film-shaped adhesive of the present invention, it is preferable that the acrylic resin includes a first acrylic resin having a weight average molecular weight of 100,000 to 500,000 and a second acrylic resin having a weight average molecular weight of 600,000 to 1 million. Based on the total mass, the content of the first acrylic resin is 50% by mass or more.

本發明的膜狀接著劑較佳為包含無機填料及有機填料的至少一者。
[發明的效果]The film-like adhesive of the present invention preferably contains at least one of an inorganic filler and an organic filler.
[Effect of the invention]

根據本發明，可提供一種能夠獲得抑制前置時間的增加、並且連接可靠性優異的半導體裝置的半導體裝置的製造方法。另外，根據本發明，可提供一種該製造方法中可使用的膜狀接著劑。According to the present invention, it is possible to provide a method for manufacturing a semiconductor device capable of obtaining a semiconductor device that suppresses an increase in lead time and is excellent in connection reliability. Moreover, according to this invention, the film-form adhesive which can be used for this manufacturing method can be provided.

以下，參照圖式來對本發明的較佳實施形態進行詳細說明。於以下的說明中，對相同或相當部分標註相同符號，並省略重複的說明。另外，上下左右等位置關係只要無特別說明，則是指基於圖式所示的位置關係者。進而，圖式的尺寸比率並不限於圖示的比率。再者，所謂本說明書中的「(甲基)丙烯酸」是指「丙烯酸」及與其相對應的「甲基丙烯酸」。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and repeated descriptions are omitted. In addition, a positional relationship such as up, down, left, right, etc. refers to a person based on a positional relationship shown in a drawing unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown in the drawings. In addition, the "(meth) acrylic acid" in this specification means "acrylic acid" and the corresponding "methacrylic acid".

（膜狀接著劑）
圖1是示意性表示本實施形態的膜狀接著劑10的剖面圖。膜狀接著劑10為熱硬化性，且是將經過半硬化（B階段）狀態，而於硬化處理後可呈完全硬化物（C階段）狀態的接著劑組成物成形為膜狀而成者。(Film adhesive)
FIG. 1 is a cross-sectional view schematically showing a film-shaped adhesive 10 according to this embodiment. The film-shaped adhesive 10 is thermosetting, and is formed by forming a film-shaped adhesive composition that is in a semi-hardened (B-stage) state and can be fully cured (C-stage) after a hardening process.

膜狀接著劑10的150℃下的剪切彈性係數為1.5 MPa以下。就更容易獲得抑制前置時間的增加、並且連接可靠性優異的半導體裝置的觀點而言，剪切彈性係數較佳為1.2 MPa以下，更佳為1.0 MPa以下，進而佳為0.8 MPa以下。剪切彈性係數的下限並無特別限定，就抑制過度的流動性的觀點而言，可設為0.01 MPa。再者，如下文所述，剪切彈性係數能夠藉由調整（a）成分～（f）成分的種類及量來進行調整。例如，作為用於降低150℃下的剪切彈性係數（設為1.5 MPa以下）的指南，可列舉：增加（a1）成分的量、減少（a2）成分的量、降低（b）成分的重量平均分子量、減少（c）成分的量、減少（d）成分的量、減少（e）成分的量等，但並不限定於此。The film-like adhesive 10 has a shear elastic modulus at 150 ° C. of 1.5 MPa or less. From the viewpoint that it is easier to obtain a semiconductor device that suppresses an increase in lead time and is excellent in connection reliability, the shear modulus is preferably 1.2 MPa or less, more preferably 1.0 MPa or less, and still more preferably 0.8 MPa or less. The lower limit of the shear elastic coefficient is not particularly limited, and may be 0.01 MPa from the viewpoint of suppressing excessive fluidity. In addition, as described below, the shear elasticity coefficient can be adjusted by adjusting the types and amounts of the components (a) to (f). For example, as a guide for reducing the coefficient of shear elasticity at 150 ° C. (less than 1.5 MPa), examples include increasing the amount of (a1) component, decreasing the amount of (a2) component, and reducing the weight of (b) component. The average molecular weight, the amount by which the component (c) is reduced, the amount by which the component (d) is reduced, the amount by which the (e) component is reduced, and the like are not limited thereto.

膜狀接著劑10較佳為硬化後的170℃～190℃下的拉伸彈性係數為15 MPa以下。就更容易獲得良好的埋入性及應力緩和性的觀點而言，拉伸彈性係數更佳為12 MPa以下，進而佳為10 MPa以下，特佳為8 MPa以下。拉伸彈性係數的下限並無特別限定，就確保適度的接著性的觀點而言，可設為1 MPa。拉伸彈性系數例如可將頻率設為10 Hz，並使用動態黏彈性測定裝置進行測定。It is preferable that the film-like adhesive agent 10 has a tensile elastic modulus at 170 ° C. to 190 ° C. of 15 MPa or less. From the viewpoint that it is easier to obtain good embedding properties and stress relaxation properties, the tensile elastic modulus is more preferably 12 MPa or less, further preferably 10 MPa or less, and particularly preferably 8 MPa or less. The lower limit of the tensile elastic coefficient is not particularly limited, and may be set to 1 MPa from the viewpoint of ensuring moderate adhesiveness. The coefficient of tensile elasticity can be measured using a dynamic viscoelasticity measuring device with a frequency of 10 Hz, for example.

膜狀接著劑10較佳為80℃下的剪切黏度為15000 Pa·s以下。就容易獲得良好的埋入性的觀點而言，剪切黏度更佳為10000 Pa·s以下，進而佳為9000 Pa·s以下。剪切黏度的下限並無特別限定，就抑制過度的流動性的觀點而言，可設為1000 Pa·s。剪切黏度例如可使用動態黏彈性測定裝置進行測定。The film adhesive 10 preferably has a shear viscosity at 80 ° C. of 15,000 Pa · s or less. From the viewpoint of easily obtaining good embedding properties, the shear viscosity is more preferably 10,000 Pa · s or less, and further preferably 9000 Pa · s or less. The lower limit of the shear viscosity is not particularly limited, and may be set to 1000 Pa · s from the viewpoint of suppressing excessive fluidity. The shear viscosity can be measured using a dynamic viscoelasticity measuring device, for example.

膜狀接著劑10的含有成分並無特別限定，例如可包含：（a）熱硬化性成分、（b）熱塑性成分、（c）無機填料、（d）有機填料、（e）硬化促進劑、（f）其他成分等。藉由調整該些（a）成分～（f）成分的種類及量，而可調整膜狀接著劑10的特性。The content of the film-shaped adhesive 10 is not particularly limited, and may include, for example, (a) a thermosetting component, (b) a thermoplastic component, (c) an inorganic filler, (d) an organic filler, (e) a hardening accelerator, (F) Other ingredients. By adjusting the types and amounts of the components (a) to (f), the characteristics of the film-shaped adhesive 10 can be adjusted.

（a）熱硬化性成分
作為熱硬化性成分，可列舉熱硬化性樹脂。尤其就安裝半導體元件時所要求的耐熱性及耐濕性的觀點而言，作為熱硬化性成分，較佳為環氧樹脂、酚樹脂等。(A) Thermosetting component As a thermosetting component, a thermosetting resin is mentioned. In particular, from the viewpoint of heat resistance and humidity resistance required when mounting a semiconductor element, epoxy resins, phenol resins, and the like are preferred as the thermosetting component.

例如，作為環氧樹脂，可使用含芳香環的環氧樹脂、含雜環的環氧樹脂、脂環式環氧樹脂等通常已知的環氧樹脂。另外，環氧樹脂可為多官能環氧樹脂。作為環氧樹脂，具體而言，例如可使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚E型環氧樹脂、使該些雙酚型環氧樹脂改質而成的二官能環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、茀改質環氧樹脂、三苯基甲烷型環氧樹脂、聯苯型環氧樹脂、縮水甘油胺型環氧樹脂、萘改質環氧樹脂等。For example, as the epoxy resin, generally known epoxy resins such as an aromatic ring-containing epoxy resin, a heterocyclic ring-containing epoxy resin, and an alicyclic epoxy resin can be used. In addition, the epoxy resin may be a polyfunctional epoxy resin. As the epoxy resin, specifically, for example, bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol E epoxy resin, and modified bisphenol epoxy resins can be used. Bifunctional epoxy resin, cresol novolac epoxy resin, bisphenol A novolac epoxy resin, modified epoxy resin, triphenylmethane epoxy resin, biphenyl epoxy resin, shrinkage Glycerylamine type epoxy resin, naphthalene modified epoxy resin, etc.

作為環氧樹脂，例如可列舉：新日化環氧製造股份有限公司製造的YDF系列及YDCN系列、普林泰科（Printec）股份有限公司製造的EPOX-MK系列及VG-3101L等。Examples of the epoxy resin include YDF series and YDCN series manufactured by Nippon Epoxy Manufacturing Co., Ltd., EPOX-MK series and VG-3101L manufactured by Printec Co., Ltd., and the like.

另外，作為酚樹脂，例如可列舉：酚醛清漆型酚樹脂、新酚型酚樹脂、聯苯型酚樹脂、三苯基甲烷型酚樹脂、利用芳基取代酚環上的氫而成的改質酚樹脂等。再者，作為酚樹脂，就耐熱性的觀點而言，較佳為投入85℃、85%RH的恆溫恆濕槽中48小時後的吸水率為2質量%以下，利用熱重量分析儀（thermogravimetric analyzer，TGA）測定出的350℃下的加熱質量減少率（升溫速度：5℃/min，環境：氮）小於5質量%者。Examples of the phenol resin include novolac-type phenol resin, neo-phenol-type phenol resin, biphenyl-type phenol resin, triphenylmethane-type phenol resin, and modification by replacing aryl ring with hydrogen on the phenol ring. Phenol resin and so on. In addition, as a phenol resin, from the viewpoint of heat resistance, it is preferable that the water absorption rate after being put into a constant temperature and humidity tank at 85 ° C. and 85% RH for 48 hours has a water absorption rate of 2% by mass or less, and a thermogravimetric An analyzer (TGA) has a heating mass reduction rate (temperature increase rate: 5 ° C / min, environment: nitrogen) at 350 ° C of less than 5% by mass.

作為酚樹脂，例如可列舉迪愛生（DIC）股份有限公司製造的芬萊特（Phenolite）KA及TD系列、空氣水（AIR WATER）股份有限公司製造的HE系列等。Examples of the phenol resin include Phenolite KA and TD series manufactured by DIC Corporation, and HE series manufactured by Air Water Corporation.

於併用環氧樹脂及酚樹脂來作為（a）熱硬化性成分的情況下，以環氧當量與羥基當量的當量比計，環氧樹脂及酚樹脂的調配比分別較佳為成為0.70/0.30～0.30/0.70，更佳為成為0.65/0.35～0.35/0.65，進而佳為成為0.60/0.40～0.40/0.60，特佳為成為0.60/0.40～0.50/0.50。藉由調配比為所述範圍內，容易獲得具有優異的硬化性、流動性等的膜狀接著劑10。In the case where an epoxy resin and a phenol resin are used as (a) thermosetting components, the blending ratio of the epoxy resin and the phenol resin is preferably 0.70 / 0.30 based on the equivalent ratio of the epoxy equivalent to the hydroxyl equivalent. It is preferably from -0.30 / 0.70, more preferably from 0.65 / 0.35 to 0.35 / 0.65, even more preferably from 0.60 / 0.40 to 0.40 / 0.60, and particularly preferably from 0.60 / 0.40 to 0.50 / 0.50. When the blending ratio is within the above range, it is easy to obtain a film-like adhesive 10 having excellent curability, fluidity, and the like.

再者，就抑制硬化後的半導體裝置的翹曲的觀點而言，較佳為組合硬化速度不同的熱硬化性樹脂。具體而言，以上所例示的環氧樹脂及酚樹脂中，例如較佳為將（a1）軟化點為60℃以下或常溫下為液體者（只要為硬化後具有接著作用者則並無特別限定）、及（a2）軟化點超過60℃（常溫下為固體）者組合使用。再者，此處所謂的常溫是指5℃～35℃。From the viewpoint of suppressing warpage of the semiconductor device after curing, a thermosetting resin having a different curing speed is preferred. Specifically, among the epoxy resins and phenol resins exemplified above, for example, it is preferable that the (a1) softening point is 60 ° C. or lower, or that the liquid is a liquid at normal temperature. ), And (a2) those whose softening point exceeds 60 ° C (solid at normal temperature) are used in combination. The normal temperature here means 5 ° C to 35 ° C.

以（a）成分的總質量為基準，（a1）成分的含量較佳為10質量%～50質量%，更佳為20質量%～40質量%。藉此，容易兼具埋入性及切割（dicing）、拾取（pick-up）等製程適應性。Based on the total mass of the component (a), the content of the component (a1) is preferably 10% by mass to 50% by mass, and more preferably 20% by mass to 40% by mass. Thereby, it is easy to have both the embedding property and process adaptability such as dicing and pick-up.

以（a）成分的總質量為基準，（a2）成分的含量較佳為10質量%以上，更佳為15質量%以上。藉此，容易調整製膜性、流動性、應力緩和性等。再者，（a2）成分的含量的上限並無特別限定，以（a）成分的總質量為基準，可設為90質量%。Based on the total mass of the component (a), the content of the component (a2) is preferably 10% by mass or more, and more preferably 15% by mass or more. This makes it easy to adjust the film forming properties, fluidity, stress relaxation properties, and the like. The upper limit of the content of the (a2) component is not particularly limited, and may be 90% by mass based on the total mass of the (a) component.

（b）熱塑性成分
作為（b）熱塑性成分，較佳為併用具有交聯性官能基的單體比率高且分子量低的熱塑性成分、及具有交聯性官能基的單體比率低且分子量高的熱塑性成分。例如，（b）成分較佳為包含：（b1）相對於單體單元總量而含有5莫耳%～15莫耳%的具有交聯性官能基的單體單元、重量平均分子量為10萬～50萬且玻璃轉移溫度Tg為-50℃～50℃的熱塑性成分；及（b2）相對於單體單元總量而以1莫耳%～7莫耳%的比率含有具有交聯性官能基的單體單元、重量平均分子量為60萬～100萬且玻璃轉移溫度Tg為-50℃～50℃的熱塑性成分。(B) Thermoplastic component As the (b) thermoplastic component, it is preferred to use a thermoplastic component having a high ratio of monomers having a crosslinkable functional group and a low molecular weight, and a thermoplastic component having a low ratio of monomers having a crosslinkable functional group and a high molecular weight. Thermoplastic composition. For example, the component (b) preferably contains (b1) a monomer unit having a crosslinkable functional group containing 5 mol% to 15 mol% with respect to the total amount of the monomer units, and the weight average molecular weight is 100,000. To 500,000 and a thermoplastic component having a glass transition temperature Tg of -50 ° C to 50 ° C; and (b2) containing a crosslinkable functional group at a ratio of 1 mol% to 7 mol% with respect to the total amount of monomer units. Monomer component, thermoplastic component having a weight average molecular weight of 600,000 to 1,000,000, and a glass transition temperature Tg of -50 ° C to 50 ° C.

作為（b）成分，較佳為作為熱塑性樹脂的丙烯酸樹脂（丙烯酸系樹脂），進而更佳為玻璃轉移溫度Tg為-50℃～50℃，且將丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等具有環氧基或縮水甘油基作為交聯性官能基的官能性單體聚合而獲得的含環氧基的(甲基)丙烯酸共聚物等丙烯酸樹脂。The component (b) is preferably an acrylic resin (acrylic resin) as a thermoplastic resin, more preferably a glass transition temperature Tg of -50 ° C to 50 ° C, and glycidyl acrylate and glycidyl methacrylate Acrylic resins such as epoxy group-containing (meth) acrylic copolymers obtained by polymerizing a functional monomer having an epoxy group or a glycidyl group as a crosslinkable functional group.

作為此種丙烯酸樹脂，可使用含環氧基的(甲基)丙烯酸酯共聚物、含環氧基的丙烯酸橡膠等，更佳為含環氧基的丙烯酸橡膠。含環氧基的丙烯酸橡膠是將丙烯酸酯作為主成分，且主要包含丙烯酸丁酯與丙烯腈等的共聚物、丙烯酸乙酯與丙烯腈等的共聚物等的具有環氧基的丙烯酸橡膠。As such an acrylic resin, an epoxy group-containing (meth) acrylate copolymer, an epoxy group-containing acrylic rubber, or the like can be used, and an epoxy group-containing acrylic rubber is more preferable. The epoxy-group-containing acrylic rubber is an acrylic rubber having an epoxy group, such as a copolymer of butyl acrylate and acrylonitrile, and a copolymer of ethyl acrylate and acrylonitrile.

再者，作為（b）成分的交聯性官能基，除環氧基以外，亦可列舉醇性或酚性羥基、羧基等交聯性官能基。Moreover, as a crosslinkable functional group of (b) component, in addition to an epoxy group, crosslinkable functional groups, such as an alcoholic or phenolic hydroxyl group, and a carboxyl group, are mentioned.

關於（b1）成分，就容易顯現高接著力、另外容易降低150℃下的剪切彈性係數的觀點而言，相對於單體單元總量，具有交聯性官能基的單體單元較佳為5莫耳%～15莫耳%，更佳為5莫耳%～10莫耳%。The component (b1) is preferably a monomer unit having a crosslinkable functional group with respect to the total amount of monomer units, from the viewpoints that a high adhesive force is easily exhibited and a shear elastic coefficient at 150 ° C is easily reduced. 5 mol% to 15 mol%, more preferably 5 mol% to 10 mol%.

關於（b2）成分，就容易抑制硬化後的彈性係數的過度上升的觀點而言，相對於單體單元總量，具有交聯性官能基的單體單元較佳為1莫耳%～7莫耳%，更佳為2莫耳%～5莫耳%。Regarding the component (b2), from the viewpoint of easily suppressing an excessive increase in the elastic coefficient after curing, the monomer unit having a crosslinkable functional group is preferably 1 mol% to 7 mol relative to the total amount of the monomer units. Ear%, more preferably 2 mole% to 5 mole%.

（b1）成分（第一丙烯酸樹脂）的重量平均分子量較佳為10萬～50萬。若（b1）成分的重量平均分子量為10萬以上，則膜成膜性更良好，並且可進一步提高膜狀接著劑10的接著強度及耐熱性。若（b1）成分的重量平均分子量為50萬以下，則容易降低剪切黏度，因而膜狀接著劑10的埋入性更良好。The weight average molecular weight of the component (first acrylic resin) is preferably 100,000 to 500,000. When the weight average molecular weight of the component (b1) is 100,000 or more, the film-forming property is further improved, and the bonding strength and heat resistance of the film-shaped adhesive 10 can be further improved. When the weight average molecular weight of the component (b1) is 500,000 or less, the shear viscosity is easily reduced, and therefore the embedding property of the film-shaped adhesive 10 is more favorable.

（b2）成分（第二丙烯酸樹脂）的重量平均分子量較佳為60萬～100萬。若（b2）成分的重量平均分子量為60萬以上，則藉由與（b1）成分併用而使成膜性提升的效果更加良好。若（b2）成分的重量平均分子量為100萬以下，則容易降低未硬化狀態的膜狀接著劑10的剪切黏度，因而埋入性更良好。另外，存在未硬化狀態的膜狀接著劑10的切削性得到改善，切割的品質變得更良好的情況。The weight average molecular weight of (b2) component (second acrylic resin) is preferably 600,000 to 1 million. When the weight average molecular weight of the component (b2) is 600,000 or more, the effect of improving the film-forming property by using the component (b1) in combination is more favorable. When the weight average molecular weight of the component (b2) is 1 million or less, the shear viscosity of the film-like adhesive 10 in an unhardened state is easily reduced, and thus the embedding property is better. In addition, the machinability of the film-like adhesive 10 in an unhardened state may be improved, and the quality of the cut may be further improved.

重量平均分子量是藉由凝膠滲透層析法（Gel Penetration Chromatography，GPC），使用基於標準聚苯乙烯的校準曲線而獲得的聚苯乙烯換算值。The weight average molecular weight is a polystyrene conversion value obtained by gel permeation chromatography (GPC) using a calibration curve based on standard polystyrene.

另外，（b1）成分及（b2）成分的玻璃轉移溫度Tg較佳為-50℃～50℃。若玻璃轉移溫度Tg為50℃以下，則膜狀接著劑10的柔軟性更良好。另一方面，若玻璃轉移溫度Tg為-50℃以上，則膜狀接著劑10的柔軟性不會過高，因而在切割半導體晶圓時容易將膜狀接著劑10切斷。因此，容易抑制因毛刺的產生而導致切割性惡化。The glass transition temperature Tg of the component (b1) and the component (b2) is preferably -50 ° C to 50 ° C. When the glass transition temperature Tg is 50 ° C. or lower, the flexibility of the film-shaped adhesive 10 is more favorable. On the other hand, if the glass transition temperature Tg is −50 ° C. or higher, the flexibility of the film-like adhesive 10 is not excessively high, and therefore, the film-like adhesive 10 is easily cut when the semiconductor wafer is diced. Therefore, it is easy to suppress deterioration of the cutting property due to the occurrence of burrs.

（b）成分整體的玻璃轉移溫度Tg較佳為-20℃～40℃，較佳為-10℃～30℃。藉此，在切割時膜狀接著劑10容易切斷，因而不易產生樹脂碎屑，容易提高膜狀接著劑10的接著力與耐熱性，另外容易顯現未硬化狀態的膜狀接著劑10的高流動性。(B) The glass transition temperature Tg of the entire component is preferably -20 ° C to 40 ° C, and more preferably -10 ° C to 30 ° C. Thereby, the film-like adhesive 10 is easily cut during cutting, so it is difficult to generate resin chips, it is easy to improve the adhesive force and heat resistance of the film-like adhesive 10, and it is easy to show the high strength of the film-like adhesive 10 in an unhardened state. fluidity.

玻璃轉移溫度Tg可使用熱示差掃描熱量儀（例如理學股份有限公司製造的「Thermo Plus 2」）進行測定。The glass transition temperature Tg can be measured using a thermal differential scanning calorimeter (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

（b）成分亦能夠作為市售品來獲取。例如，作為（b1）成分，可列舉丙烯酸橡膠HTR-860P-30B-CHN（商品名，長瀨化成（Nagase ChemteX）股份有限公司製造）等。該化合物為具有縮水甘油基部位作為交聯性的部位，且將包含丙烯酸衍生物的丙烯酸橡膠作為基體樹脂的化合物，重量平均分子量為23萬，玻璃轉移溫度Tg為-70℃。另外，作為（b2）成分，可列舉丙烯酸橡膠HTR-860P-3CSP（商品名，長瀨化成股份有限公司製造）等。(B) A component can also be acquired as a commercial item. For example, as component (b1), acrylic rubber HTR-860P-30B-CHN (trade name, manufactured by Nagase ChemteX Co., Ltd.) and the like can be cited. This compound is a compound having a glycidyl site as a crosslinkable site and an acrylic rubber containing an acrylic derivative as a matrix resin. The compound has a weight average molecular weight of 230,000 and a glass transition temperature Tg of -70 ° C. Examples of the component (b2) include acrylic rubber HTR-860P-3CSP (trade name, manufactured by Nagase Chemical Co., Ltd.) and the like.

以（b）成分（丙烯酸樹脂）的總質量為基準，（b1）成分（第一丙烯酸樹脂）的含量較佳為50質量%以上，更佳為70質量%以上。藉此，容易獲得良好的埋入性、應力緩和性、製膜性、接著性等。再者，（b1）成分的含量的上限並無特別限定，以（b）成分的總質量為基準，可設為90質量%。Based on the total mass of the component (b) (acrylic resin), the content of the component (b1) (first acrylic resin) is preferably 50% by mass or more, and more preferably 70% by mass or more. This makes it easy to obtain good embedding properties, stress relaxation properties, film forming properties, adhesiveness, and the like. The upper limit of the content of the (b1) component is not particularly limited, and may be 90% by mass based on the total mass of the (b) component.

以（b）成分的總質量為基準，（b2）成分的含量較佳為10質量%以上，更佳為30質量%以上。藉此，容易調整製膜性、接著性、彈性係數等。再者，（b2）成分的含量的上限並無特別限定，以（b）成分的總質量為基準，可設為50質量%。Based on the total mass of the component (b), the content of the component (b2) is preferably 10% by mass or more, and more preferably 30% by mass or more. This makes it easy to adjust the film forming properties, adhesiveness, elastic coefficient, and the like. The upper limit of the content of the (b2) component is not particularly limited, and may be 50% by mass based on the total mass of the (b) component.

當將（a）成分設為100質量份時，（b）成分的含量較佳為20質量份～160質量份，更佳為50質量份～120質量份。藉由（b）成分的含量為所述下限值以上，而容易獲得良好的製膜性、埋入性、接著性、應力緩和性等。另一方面，藉由（b）成分的含量為所述上限值以下，而容易獲得良好的製膜性、埋入性等。When the component (a) is 100 parts by mass, the content of the component (b) is preferably 20 to 160 parts by mass, and more preferably 50 to 120 parts by mass. When the content of the component (b) is at least the above-mentioned lower limit value, good film-forming properties, embedding properties, adhesion properties, stress relaxation properties, and the like are easily obtained. On the other hand, when the content of the component (b) is equal to or less than the above-mentioned upper limit, good film-forming properties, embedding properties, and the like are easily obtained.

（c）無機填料
作為（c）成分，就B階段狀態下的膜狀接著劑10的切割性的提升、膜狀接著劑10的操作性的提升、導熱性的提升、剪切黏度（熔融黏度）的調整、觸變性的賦予、接著力的提升等觀點而言，較佳為二氧化矽填料等。(C) As the (c) component, the inorganic filler improves the cuttability of the film-like adhesive 10 in the B-stage state, the improvement of the operability of the film-like adhesive 10, the improvement of thermal conductivity, and the shear viscosity (melt viscosity From the viewpoints of adjustment of), provision of thixotropy, and improvement of adhesion, silicon dioxide fillers and the like are preferred.

以提升未硬化狀態的膜狀接著劑10的切割性、充分顯現硬化後的接著力為目的，（c）成分較佳為包含平均粒徑不同的兩種以上的填料。（c）成分例如較佳為包含：（c1）以提升未硬化狀態的膜狀接著劑10的切割性為目的的平均粒徑為0.2 μm以上的第一填料；及（c2）以充分顯現硬化後的接著力為目的的平均粒徑小於0.2 μm的第二填料。The component (c) preferably contains two or more fillers having different average particle diameters for the purpose of improving the dicing property of the film-shaped adhesive 10 in an unhardened state and sufficiently expressing the adhesive force after hardening. (C) The component preferably contains, for example: (c1) a first filler having an average particle diameter of 0.2 μm or more for the purpose of improving the dicing property of the film-like adhesive 10 in an unhardened state; and (c2) to sufficiently develop hardening The latter adhesive force aims at the second filler having an average particle diameter of less than 0.2 μm.

平均粒徑設為使用雷射繞射式粒度分佈測定裝置，將丙酮作為溶劑進行分析時所獲得的值。關於第一填料及第二填料的平均粒徑，於利用粒度分佈測定裝置進行分析的情況下，在可判別包含各個填料的程度內，更佳為其差大。The average particle diameter is a value obtained when a laser diffraction type particle size distribution measuring device is used for analysis using acetone as a solvent. About the average particle diameter of a 1st filler and a 2nd filler, when it analyzes with a particle size distribution measuring device, it is more preferable that the difference is large so that each filler may be included.

以（c）成分的總質量為基準，（c1）成分的含量較佳為30質量%以上。藉由（c1）成分的含量為30質量%以上，而容易抑制膜的斷裂性的惡化、未硬化狀態的膜狀接著劑10的流動性的惡化。再者，（c1）成分的含量的上限並無特別限定，以（c）成分的總質量為基準，可設為95質量%。The content of the component (c1) is preferably 30% by mass or more based on the total mass of the component (c). When the content of the component (c1) is 30% by mass or more, it is easy to suppress deterioration of the breakability of the film and deterioration of the fluidity of the film-like adhesive 10 in an uncured state. The upper limit of the content of the (c1) component is not particularly limited, and may be 95% by mass based on the total mass of the (c) component.

以（c）成分的總質量為基準，（c2）成分的含量較佳為5質量%以上。藉由（c2）成分的含量為5質量%以上，而容易提升硬化後的接著力。再者，就確保適度的流動性的觀點而言，以（c）成分的總質量為基準，（c2）成分的含量的上限可設為30質量%。The content of the component (c2) is preferably 5% by mass or more based on the total mass of the component (c). When the content of the component (c2) is 5% by mass or more, the adhesion after hardening is easily improved. Furthermore, from the viewpoint of ensuring moderate fluidity, the upper limit of the content of the (c2) component may be 30% by mass based on the total mass of the (c) component.

當將（a）成分設為100質量份時，（c）成分的含量較佳為10質量份～90質量份。藉由（c）成分的含量為所述下限值以上，而有容易抑制未硬化狀態的膜狀接著劑10的切割性的惡化、硬化後的接著力的下降的傾向。另一方面，藉由（c）成分的含量為所述上限值以下，而有容易抑制未硬化狀態的膜狀接著劑10的流動性的下降、硬化後的彈性係數的上升的傾向。When the component (a) is 100 parts by mass, the content of the component (c) is preferably 10 to 90 parts by mass. When the content of the component (c) is equal to or more than the lower limit value described above, it is easy to suppress deterioration of the dicing property of the film-like adhesive 10 in an uncured state and a decrease in the adhesive force after curing. On the other hand, when the content of the component (c) is equal to or lower than the above-mentioned upper limit, it is easy to suppress the decrease in the fluidity of the film-like adhesive 10 in the uncured state and the increase in the elastic coefficient after curing.

（d）有機填料
作為（d）成分，就膜狀接著劑10的切割性的提升、膜狀接著劑10的操作性的提升、剪切黏度（熔融黏度）的調整、接著力的提升、硬化後的應力緩和性等觀點而言，較佳為苯乙烯-聚甲基丙烯酸甲酯（Polymethyl Methacrylate，PMMA）改質橡膠填料、矽酮改質橡膠填料等。就容易充分顯現硬化後的接著力的觀點而言，（d）成分的平均粒徑較佳為0.2 μm以下。(D) Organic filler is used as component (d) to improve the cuttability of the film-shaped adhesive 10, to improve the operability of the film-shaped adhesive 10, to adjust the shear viscosity (melt viscosity), to improve the adhesion, and to harden From the viewpoints of the later stress relaxation properties, styrene-polymethyl methacrylate (PMMA) modified rubber filler, silicone modified rubber filler, and the like are preferred. The average particle diameter of the component (d) is preferably 0.2 μm or less from the viewpoint of easily expressing the adhesive force after hardening sufficiently.

當將（c）成分設為100質量份時，（d）成分的含量較佳為0質量份～50質量份。When the component (c) is 100 parts by mass, the content of the component (d) is preferably 0 to 50 parts by mass.

（e）硬化促進劑
以獲得良好的硬化性為目的，較佳為使用（e）硬化促進劑。作為（e）成分，就反應性的觀點而言，較佳為咪唑系的化合物。再者，若（e）成分的反應性過高，則有藉由膜狀接著劑10的製造步驟中的加熱，不僅剪切黏度容易上升，亦容易引起經時的劣化的傾向。另一方面，若（e）成分的反應性過低，則有膜狀接著劑10的硬化性容易降低的傾向。若膜狀接著劑10未充分硬化便搭載於製品內，則無法獲得充分的接著性，而有可能使半導體裝置的連接可靠性惡化。(E) A hardening accelerator is used for the purpose of obtaining good hardenability, and (e) a hardening accelerator is preferably used. As component (e), an imidazole-based compound is preferred from the viewpoint of reactivity. Furthermore, if the reactivity of the component (e) is too high, it is likely that not only the shear viscosity tends to increase but also the deterioration with time tends to occur due to heating in the production step of the film-like adhesive 10. On the other hand, if the reactivity of the component (e) is too low, the curability of the film-shaped adhesive 10 tends to be easily reduced. If the film-like adhesive 10 is mounted in a product without being sufficiently hardened, sufficient adhesion cannot be obtained, and the connection reliability of the semiconductor device may be deteriorated.

藉由含有（e）成分，膜狀接著劑10的硬化性進一步提升。另一方面，於（e）成分的含量過多的情況下，有藉由膜狀接著劑10的製造步驟中的加熱，不僅剪切黏度容易上升，亦容易引起經時的劣化的傾向。就此種觀點而言，當將（a）成分設為100質量份時，（e）成分的含量較佳為0質量份～0.20質量份。By containing the component (e), the curability of the film-shaped adhesive 10 is further improved. On the other hand, when the content of the component (e) is too large, the heating in the production step of the film-like adhesive 10 tends not only to increase the shear viscosity, but also to cause deterioration with time. From such a viewpoint, when the component (a) is 100 parts by mass, the content of the (e) component is preferably 0 to 0.20 parts by mass.

（f）其他成分
就接著性提升的觀點而言，除所述成分以外，亦可進而使用適量的本技術領域中可使用的其他成分。作為此種成分，例如可列舉偶合劑。作為偶合劑，可列舉：γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷等。(F) Other components From the viewpoint of improving adhesion, in addition to the components described above, an appropriate amount of other components that can be used in the technical field may be used. Examples of such a component include a coupling agent. Examples of the coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3- (2-aminoethyl) ) Aminopropyltrimethoxysilane and the like.

（膜狀接著劑）
膜狀接著劑10例如可藉由以下步驟而獲得：藉由將包含所述成分的接著劑組成物的清漆塗佈於基材膜上而形成清漆的層的步驟、藉由加熱乾燥而自清漆的層去除溶劑的步驟、將基材膜去除的步驟。(Film adhesive)
The film-like adhesive agent 10 can be obtained, for example, by a step of applying a varnish of an adhesive composition containing the component to a substrate film to form a varnish layer, and drying the varnish by heating and drying. A step of removing a solvent and a step of removing a base film.

清漆可將包含所述成分的接著劑組成物在有機溶劑中混合、混煉等來製備。混合及混練可使用通常的攪拌機、擂潰機、三輥磨機、球磨機等分散機。該些機器可適當組合來使用。清漆的塗佈例如可藉由缺角輪塗佈機、模塗機等來進行。清漆的加熱乾燥條件只要為所使用的有機溶劑充分揮發的條件則並無特別限制，例如可設為於60℃～200℃下加熱0.1分鐘～90分鐘。The varnish can be prepared by mixing, kneading, and the like of an adhesive composition containing the above components in an organic solvent. For mixing and kneading, a conventional disperser such as a mixer, a crusher, a three-roll mill, or a ball mill can be used. These machines can be used in appropriate combination. The application of the varnish can be performed by, for example, a notch wheel coater, a die coater, or the like. The heating and drying conditions of the varnish are not particularly limited as long as the organic solvent used is sufficiently volatilized, and for example, heating can be performed at 60 ° C to 200 ° C for 0.1 minute to 90 minutes.

作為有機溶劑，只要為可將所述成分均勻地溶解、混煉或分散者則可無限制地使用現有公知者。作為此種溶劑，例如可列舉：丙酮、甲基乙基酮、甲基異丁基酮、環己酮等酮系溶劑；二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯啶酮、甲苯、二甲苯等。就乾燥速度快、價格低的方面而言，較佳為使用甲基乙基酮、環己酮等。As the organic solvent, a conventionally known one can be used without any limitation as long as the components can be uniformly dissolved, kneaded, or dispersed. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; dimethylformamide, dimethylacetamide, and N-methyl Pyrrolidone, toluene, xylene and the like. In terms of fast drying speed and low price, it is preferable to use methyl ethyl ketone, cyclohexanone, or the like.

所述基材膜並無特別限制，例如可列舉：聚酯膜（聚對苯二甲酸乙二酯膜等）、聚丙烯膜（定向聚丙烯（Oriented PolyPropylene，OPP）膜等）、聚醯亞胺膜、聚醚醯亞胺膜、聚醚萘二甲酸酯膜、甲基戊烯膜等。The substrate film is not particularly limited, and examples thereof include polyester film (polyethylene terephthalate film, etc.), polypropylene film (oriented polypropylene (Oriented PolyPropylene, OPP) film, etc.), and polyisocyanate. Amine film, polyetherimide film, polyether naphthalate film, methylpentene film, etc.

為了將第一導線及第一半導體元件、以及基板的配線電路等的凹凸充分埋入，膜狀接著劑10的厚度較佳為20 μm～200 μm。另外，藉由厚度為20 μm以上，而容易獲得充分的接著力，藉由為200 μm以下，而容易滿足半導體裝置的小型化的要求。就此種觀點而言，膜狀接著劑10的厚度更佳為30 μm～200 μm，進而佳為40 μm～150 μm。The thickness of the film-shaped adhesive 10 is preferably 20 μm to 200 μm in order to fully embed the unevenness of the first lead, the first semiconductor element, and the wiring circuit of the substrate. In addition, when the thickness is 20 μm or more, it is easy to obtain a sufficient adhesive force, and when it is 200 μm or less, it is easy to meet the requirements for miniaturization of a semiconductor device. From such a viewpoint, the thickness of the film-like adhesive 10 is more preferably 30 μm to 200 μm, and even more preferably 40 μm to 150 μm.

作為獲得厚的膜狀接著劑10的方法，可列舉將膜狀接著劑10彼此貼合的方法。Examples of a method for obtaining a thick film-shaped adhesive 10 include a method of bonding the film-shaped adhesives 10 to each other.

（接著片）
如圖2所示，接著片100為於基材膜20上具有膜狀接著劑10者。接著片100可藉由在獲得膜狀接著劑10的步驟中，不去除基材膜20而獲得。(Continued)
As shown in FIG. 2, the adhesive sheet 100 has a film-shaped adhesive 10 on a base film 20. The subsequent sheet 100 can be obtained without removing the base film 20 in the step of obtaining the film-like adhesive 10.

如圖3所示，接著片110為於接著片100的與基材膜20為相反側的面上進而具有覆蓋膜30者。作為覆蓋膜30，例如可列舉聚對苯二甲酸乙二酯（polyethylene terephthalate，PET）膜、聚乙烯（polyethylene，PE）膜、OPP膜等。As shown in FIG. 3, the adhesive sheet 110 includes a cover film 30 on the surface of the adhesive sheet 100 on the side opposite to the base film 20. Examples of the cover film 30 include a polyethylene terephthalate (PET) film, a polyethylene (PE) film, and an OPP film.

膜狀接著劑10亦可積層於切割帶上。藉由使用由此而獲得的切割·黏晶一體型接著片，可一次性進行半導體晶圓上的層壓步驟，能夠實現作業的效率化。The film-like adhesive 10 can also be laminated on a dicing tape. By using the dicing die-bonding integrated bonding sheet thus obtained, the lamination step on the semiconductor wafer can be performed at one time, and work efficiency can be achieved.

作為切割帶，例如可列舉：聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜等塑膠膜等。亦可視需要而對切割帶進行底塗處理、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。Examples of the dicing tape include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Surface treatments such as primer coating treatment, UV treatment, corona discharge treatment, grinding treatment, and etching treatment can also be performed on the cutting tape as needed.

切割帶較佳為具有黏著性者。作為此種切割帶，可列舉對所述塑膠膜賦予黏著性者、於所述塑膠膜的單面設置有黏著劑層者。The dicing tape is preferably one having adhesiveness. Examples of such a dicing tape include a person who imparts adhesiveness to the plastic film, and a person who has provided an adhesive layer on one side of the plastic film.

作為此種切割·黏晶一體型接著片，可列舉圖4所示的接著片120及圖5所示的接著片130。如圖4所示，接著片120具有如下結構：將於可確保施加有拉伸張力時的伸長率的基材膜40上設置有黏著劑層50的切割帶60作為支撐基材，且於切割帶60的黏著劑層50上設置有膜狀接著劑10。如圖5所示，接著片130具有在接著片120中，於膜狀接著劑10的表面進而設置有基材膜20的結構。Examples of such a cut-and-bond-integrated adhesive sheet include the adhesive sheet 120 shown in FIG. 4 and the adhesive sheet 130 shown in FIG. 5. As shown in FIG. 4, the adhesive sheet 120 has a structure in which a dicing tape 60 provided with an adhesive layer 50 on a base film 40 capable of ensuring elongation when a tensile tension is applied is used as a supporting base, and A film-like adhesive 10 is provided on the adhesive layer 50 of the tape 60. As shown in FIG. 5, the adhesive sheet 130 has a structure in which the base film 20 is further provided on the surface of the film-shaped adhesive 10 in the adhesive sheet 120.

作為基材膜40，可列舉關於切割帶所記載的所述塑膠膜。另外，黏著劑層50例如可使用包含液狀成分及熱塑性成分且具有適度的黏接強度的樹脂組成物來形成。為了獲得切割帶60，可列舉：將該樹脂組成物塗佈於基材膜40上並加以乾燥而形成黏著劑層50的方法；將暫時形成於PET膜等其他膜上的黏著劑層50與基材膜40貼合的方法等。Examples of the base film 40 include the plastic film described in the dicing tape. The adhesive layer 50 can be formed using, for example, a resin composition containing a liquid component and a thermoplastic component and having a moderate adhesive strength. In order to obtain the dicing tape 60, a method of coating the resin composition on the base film 40 and drying it to form an adhesive layer 50, and an adhesive layer 50 temporarily formed on another film such as a PET film and A method of bonding the base film 40 and the like.

作為於切割帶60上積層膜狀接著劑10的方法，可列舉：將所述接著劑組成物的清漆直接塗佈於切割帶60上並加以乾燥的方法；將清漆網版印刷至切割帶60上的方法；預先製作膜狀接著劑10，並藉由壓製、熱輥層壓而將其積層於切割帶60上的方法等。就可連續地製造、效率佳的方面而言，較佳為藉由熱輥層壓進行積層。As a method of laminating the film-like adhesive agent 10 on the dicing tape 60, a method of directly coating and drying the varnish of the adhesive composition on the dicing tape 60 and screen-printing the varnish onto the dicing tape 60 may be mentioned. The above method; a method in which a film-like adhesive 10 is prepared in advance and laminated on a dicing tape 60 by pressing or hot-roll lamination, and the like. In terms of continuous production and high efficiency, it is preferable to perform lamination by hot roll lamination.

切割帶60的厚度並無特別限制，可根據膜狀接著劑10的厚度或切割·黏晶一體型接著片的用途，基於所屬技術領域中具有通常知識者的知識而適當地確定。再者，藉由切割帶60的厚度為60 μm以上，而有容易抑制操作性的降低、由擴展（expanding）所致的破裂等的傾向。另一方面，藉由切割帶的厚度為180 μm以下，而容易兼具經濟性與操作性的優點。The thickness of the dicing tape 60 is not particularly limited, and can be appropriately determined based on the thickness of the film-like adhesive 10 or the use of the cut-bond-integrated adhesive sheet based on the knowledge of a person having ordinary knowledge in the technical field. Furthermore, when the thickness of the dicing tape 60 is 60 μm or more, there is a tendency that it is easy to suppress a decrease in operability, a break due to expansion, and the like. On the other hand, since the thickness of the dicing tape is 180 μm or less, it is easy to combine the advantages of economy and operability.

（半導體裝置）
圖6是表示半導體裝置的剖面圖。如圖6所示，半導體裝置200是於第一半導體元件Wa上層疊第二半導體元件Waa而成的半導體裝置。詳細而言，是將第一階段的第一半導體元件Wa經由第一導線88而電性連接於基板14，並且於第一半導體元件Wa上，經由膜狀接著劑10而壓接較第一半導體元件Wa的面積更大的第二階段的第二半導體元件Waa，藉此而將第一導線88及第一半導體元件Wa埋入膜狀接著劑10中而成的線埋入型的半導體裝置。另外，半導體裝置200中，進而經由第二導線98而將基板14與第二半導體元件Waa電性連接，並且藉由密封材42而將第二半導體元件Waa密封。(Semiconductor device)
FIG. 6 is a cross-sectional view showing a semiconductor device. As shown in FIG. 6, the semiconductor device 200 is a semiconductor device in which a second semiconductor element Waa is stacked on a first semiconductor element Wa. In detail, the first semiconductor element Wa in the first stage is electrically connected to the substrate 14 via the first wire 88, and the first semiconductor element Wa is crimped to the first semiconductor via the film-shaped adhesive 10 via the film-shaped adhesive 10. The second semiconductor element Waa in the second stage having a larger area of the element Wa is a wire-embedded semiconductor device in which the first lead wire 88 and the first semiconductor element Wa are buried in the film-shaped adhesive 10. In addition, in the semiconductor device 200, the substrate 14 and the second semiconductor element Waa are further electrically connected via a second wire 98, and the second semiconductor element Waa is sealed by a sealing material 42.

第一半導體元件Wa的厚度為10 μm～170 μm，第二半導體元件Waa的厚度為20 μm～400 μm。埋入至膜狀接著劑10內部的第一半導體元件Wa為用以驅動半導體裝置200的控制器晶片。The thickness of the first semiconductor element Wa is 10 μm to 170 μm, and the thickness of the second semiconductor element Waa is 20 μm to 400 μm. The first semiconductor element Wa embedded in the film-shaped adhesive 10 is a controller wafer for driving the semiconductor device 200.

基板14包括電路圖案84、電路圖案94分別於表面各形成有兩處的有機基板90。第一半導體元件Wa經由接著劑41而壓接於電路圖案94上，第二半導體元件Waa以覆蓋未壓接有第一半導體元件Wa的電路圖案94、第一半導體元件Wa、及電路圖案84的一部分的方式經由膜狀接著劑10而壓接於基板14。由基板14上的電路圖案84、電路圖案94所引起的凹凸被膜狀接著劑10埋入。並且，利用樹脂製的密封材42，將第二半導體元件Waa、電路圖案84及第二導線98密封。The substrate 14 includes a circuit pattern 84 and an organic substrate 90 with two circuit patterns 94 formed on the surface, respectively. The first semiconductor element Wa is crimped onto the circuit pattern 94 via the adhesive 41, and the second semiconductor element Waa covers the circuit pattern 94 of the first semiconductor element Wa, the first semiconductor element Wa, and the circuit pattern 84 without being crimped. Part of the system is pressure-bonded to the substrate 14 via the film-shaped adhesive 10. The unevenness caused by the circuit pattern 84 and the circuit pattern 94 on the substrate 14 is buried in the film-like adhesive 10. Then, the second semiconductor element Waa, the circuit pattern 84, and the second lead 98 are sealed with a resin sealing material 42.

（半導體裝置的製造方法）
半導體裝置可藉由如下半導體裝置的製造方法而製造，所述製造方法包括：第一黏晶步驟，將第一半導體元件經由第一導線而電性連接於基板上；層壓步驟，於較第一半導體元件的面積更大的第二半導體元件的單面上，貼附150℃下的剪切彈性係數為1.5 MPa以下的膜狀接著劑；以及第二黏晶步驟，以膜狀接著劑覆蓋第一半導體元件的方式載置貼附有膜狀接著劑的第二半導體元件，並壓接膜狀接著劑，藉此而將第一導線及第一半導體元件埋入膜狀接著劑。以下，以半導體裝置200的製造程序為例來進行具體說明。(Method for Manufacturing Semiconductor Device)
The semiconductor device can be manufactured by a method for manufacturing a semiconductor device, the manufacturing method including: a first die bonding step, electrically connecting a first semiconductor element to a substrate via a first wire; a lamination step, compared with the first A film-shaped adhesive with a shear modulus of 1.5 MPa or less at 150 ° C. is attached to one side of a second semiconductor device having a larger semiconductor device area; and a second bonding step is covered with the film-shaped adhesive. The first semiconductor element is mounted with a second semiconductor element to which a film-shaped adhesive is attached, and the film-shaped adhesive is pressure-bonded, thereby embedding the first lead and the first semiconductor element in the film-shaped adhesive. Hereinafter, the manufacturing process of the semiconductor device 200 will be specifically described as an example.

首先，如圖7所示，於基板14上的電路圖案94上壓接帶有接著劑41的第一半導體元件Waa，且經由第一導線88而將基板14上的電路圖案84與第一半導體元件Wa電性連接（第一黏晶步驟）。First, as shown in FIG. 7, a first semiconductor element Waa with an adhesive 41 is crimped onto a circuit pattern 94 on the substrate 14, and the circuit pattern 84 on the substrate 14 and the first semiconductor are bonded via a first wire 88. The component Wa is electrically connected (the first bonding step).

其次，於半導體晶圓（例如8吋尺寸）的單面上層壓接著片100，並剝去基材膜20，藉此而於半導體晶圓的單面貼附膜狀接著劑10。並且，於將切割帶60貼合於膜狀接著劑10後，切割為規定尺寸（例如7.5 mm見方），並將切割帶60剝離，藉此而如圖8所示，獲得貼附有膜狀接著劑10的第二半導體元件Waa（層壓步驟）。Next, the adhesive sheet 100 is laminated on one side of a semiconductor wafer (for example, an 8-inch size), and the substrate film 20 is peeled off, thereby attaching the film-like adhesive 10 on one side of the semiconductor wafer. After the dicing tape 60 is attached to the film-shaped adhesive 10, the dicing tape 60 is cut to a predetermined size (for example, 7.5 mm square), and the dicing tape 60 is peeled off, thereby obtaining a film-like shape as shown in FIG. The second semiconductor element Waa of the adhesive agent 10 (lamination step).

層壓步驟較佳為於50℃～100℃下進行，更佳為於60℃～80℃下進行。若層壓步驟的溫度為50℃以上，則可獲得與半導體晶圓的良好的密接性。若層壓步驟的溫度為100℃以下，則可抑制膜狀接著劑10於層壓步驟中過度流動，因而可防止引起厚度的變化等。The lamination step is preferably performed at 50 ° C to 100 ° C, and more preferably 60 ° C to 80 ° C. When the temperature of the lamination step is 50 ° C. or higher, good adhesion to the semiconductor wafer can be obtained. When the temperature in the laminating step is 100 ° C. or lower, excessive flow of the film-like adhesive 10 in the laminating step can be suppressed, and a change in thickness or the like can be prevented.

作為切割方法，可列舉：使用旋轉刀刃進行刀片切割的方法、藉由雷射而將膜狀接著劑10或晶圓與膜狀接著劑10兩者切斷的方法、以及常溫或冷卻條件下的伸展等通用的方法等。Examples of the dicing method include a method of performing blade dicing using a rotating blade, a method of cutting off the film-like adhesive 10 or both the wafer and the film-like adhesive 10 by laser, and a method under normal temperature or cooling conditions. General methods such as stretching.

並且，將貼附有膜狀接著劑10的第二半導體元件Waa壓接於經由導線88而連接有第一半導體元件Wa的基板14。具體而言，如圖9所示，以膜狀接著劑10覆蓋第一半導體元件Wa的方式載置貼附有膜狀接著劑10的第二半導體元件Waa，繼而，如圖10所示，藉由使第二半導體元件Waa壓接於基板14而將第二半導體元件Waa固定於基板14（第二黏晶步驟）。第二黏晶步驟較佳為將膜狀接著劑10於80℃～180℃、0.01 MPa～0.50 MPa的條件下壓接0.5秒～3.0秒。Then, the second semiconductor element Waa to which the film-shaped adhesive 10 is attached is pressure-bonded to the substrate 14 to which the first semiconductor element Wa is connected via a wire 88. Specifically, as shown in FIG. 9, the second semiconductor element Waa to which the film-shaped adhesive 10 is attached is placed so that the film-shaped adhesive 10 covers the first semiconductor element Wa, and then, as shown in FIG. 10, The second semiconductor element Waa is pressure-bonded to the substrate 14 to fix the second semiconductor element Waa to the substrate 14 (second die bonding step). In the second sticking step, it is preferable that the film-shaped adhesive 10 is pressure-bonded under conditions of 80 ° C. to 180 ° C. and 0.01 MPa to 0.50 MPa for 0.5 seconds to 3.0 seconds.

繼而，如圖11所示，於將基板14與第二半導體元件Waa經由第二導線98而電性連接後，於170℃～180℃、5 MPa～8 MPa的條件下，利用密封材42將電路圖案84、第二導線98及第二半導體元件Waa整體密封（密封步驟）。藉由經過此種步驟而可製造半導體裝置200。Next, as shown in FIG. 11, after the substrate 14 and the second semiconductor element Waa are electrically connected via the second wire 98, the sealing material 42 is used under the conditions of 170 ° C. to 180 ° C. and 5 MPa to 8 MPa. The circuit pattern 84, the second lead 98, and the second semiconductor element Waa are entirely sealed (sealing step). The semiconductor device 200 can be manufactured by going through such steps.

如上所述，半導體裝置200可使用如下膜狀接著劑來製造，所述膜狀接著劑於第一半導體元件經由第一導線而電性連接於基板上，並且於第一半導體元件上壓接較第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中，用於壓接第二半導體元件並且埋入第一導線及第一半導體元件，且150℃下的剪切彈性係數為1.5 MPa以下。藉由使用150℃下的剪切彈性係數為1.5 MPa以下的膜狀接著劑，尤其可利用作為後步驟的密封步驟來消除第二黏晶步驟中產生的空隙。藉此，無需另外的用於消除空隙的特別的製程，可抑制前置時間的增加。As described above, the semiconductor device 200 can be manufactured using a film-like adhesive which is electrically connected to a substrate via a first wire on a first semiconductor element and is crimped on the first semiconductor element. In a semiconductor device formed by a second semiconductor element having a larger area of the first semiconductor element, the second semiconductor element is crimped and the first wire and the first semiconductor element are embedded, and the shear modulus at 150 ° C is 1.5 MPa or less. By using a film-like adhesive having a shear elastic coefficient of 1.5 MPa or less at 150 ° C., the sealing step used as a subsequent step can be used to eliminate voids generated in the second sticking step. This eliminates the need for a special process for eliminating voids, and suppresses an increase in lead time.

以上，對本發明的較佳實施形態進行了說明，但本發明並不一定限定於所述實施形態。例如，亦可如下所述在不脫離其主旨的範圍內進行適當變更。As mentioned above, although the preferred embodiment of this invention was described, this invention is not necessarily limited to the said embodiment. For example, as described below, appropriate changes can be made without departing from the spirit thereof.

半導體裝置200中，基板14為電路圖案84、電路圖案94於表面各形成有兩處的有機基板90，但基板14並不限定於此，亦可使用引線框架等金屬基板。In the semiconductor device 200, the substrate 14 is an organic substrate 90 having two circuit patterns 84 and two circuit patterns 94 formed on the surface. However, the substrate 14 is not limited to this, and a metal substrate such as a lead frame may be used.

半導體裝置200於第一半導體元件Wa上積層有第二半導體元件Waa，具有半導體元件分成兩段積層的構成，但半導體裝置的構成並不限定於此。可於第二半導體元件Waa上進而積層第三半導體元件，亦可於第二半導體元件Waa上進而積層多個半導體元件。隨著所積層的半導體元件的數量增加，而可增加所獲得的半導體裝置的容量。The semiconductor device 200 has a structure in which a second semiconductor element Waa is laminated on the first semiconductor element Wa and the semiconductor element is divided into two layers, but the structure of the semiconductor device is not limited to this. A third semiconductor element may be further laminated on the second semiconductor element Waa, or a plurality of semiconductor elements may be further laminated on the second semiconductor element Waa. As the number of stacked semiconductor elements increases, the capacity of the obtained semiconductor device can be increased.

本實施形態的半導體裝置的製造方法中，於層壓步驟中，於半導體晶圓的單面層壓圖2所示的接著片100，並剝去基材膜20，藉此而貼附有膜狀接著劑10，但層壓時所使用的接著片並不限定於此。可代替接著片100而使用圖4及圖5所示的切割·黏晶一體型接著片120、接著片130。該情況下，當切割半導體晶圓時，無需另行貼附切割帶60。In the method of manufacturing a semiconductor device according to this embodiment, in the laminating step, the adhesive sheet 100 shown in FIG. 2 is laminated on one side of a semiconductor wafer, and the base film 20 is peeled off, thereby attaching the film. The adhesive agent 10 is shaped like this, but the adhesive sheet used in lamination is not limited to this. Instead of the bonding sheet 100, the cut-and-stick-type integrated bonding sheet 120 and the bonding sheet 130 shown in FIGS. 4 and 5 may be used. In this case, when dicing the semiconductor wafer, it is not necessary to separately attach the dicing tape 60.

於層壓步驟中，亦可並非層壓半導體晶圓，而是使將半導體晶圓單片化而得的半導體元件層壓於接著片100。該情況下，可省略切割步驟。
[實施例]In the laminating step, instead of laminating a semiconductor wafer, a semiconductor element obtained by singulating a semiconductor wafer may be laminated on the adhesive sheet 100. In this case, the cutting step can be omitted.
[Example]

以下，列舉實施例來對本發明進行更具體說明。然而，本發明並不限定於以下的實施例。Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to the following examples.

（實施例1～實施例2及比較例1～比較例3）
依照表1（單位：質量份），分別秤量作為熱硬化性樹脂的環氧樹脂及酚樹脂、以及無機填料而獲得組成物，進而添加環己酮進行攪拌混合。於其中添加作為熱塑性樹脂的丙烯酸橡膠並攪拌後，進而加入偶合劑及硬化促進劑來進行攪拌，直至各成分變得均勻，從而獲得清漆。再者，表1中的各成分的品名是指以下者。(Examples 1 to 2 and Comparative Examples 1 to 3)
According to Table 1 (unit: part by mass), epoxy resins and phenol resins, which are thermosetting resins, and inorganic fillers were weighed to obtain a composition, and cyclohexanone was added and stirred and mixed. An acrylic rubber as a thermoplastic resin is added and stirred, and then a coupling agent and a hardening accelerator are added and stirred until each component becomes uniform, thereby obtaining a varnish. The product names of the components in Table 1 refer to the following.

（環氧樹脂）
YDF-8170C:（商品名，新日化環氧製造股份有限公司製造，雙酚F型環氧樹脂：環氧當量為159、常溫下為液體、重量平均分子量約為310）
R710:（商品名，普林泰科股份有限公司製造，雙酚E型環氧樹脂：環氧當量為170、常溫下為液體、重量平均分子量約為340）
YDCN-700-10：（商品名，新日化環氧製造股份有限公司製造，鄰甲酚酚醛清漆型環氧樹脂：環氧當量為210、軟化點為75℃～85℃）
VG-3101L:（商品名，普林泰科股份有限公司製造，多官能環氧樹脂：環氧當量為210、軟化點為39℃～46℃）(Epoxy resin)
YDF-8170C: (trade name, manufactured by Nissinika Epoxy Manufacturing Co., Ltd., bisphenol F epoxy resin: epoxy equivalent is 159, liquid at normal temperature, weight average molecular weight is about 310)
R710: (Brand name, manufactured by Prince Tyco Co., Ltd., bisphenol E epoxy resin: epoxy equivalent is 170, liquid at normal temperature, weight average molecular weight is about 340)
YDCN-700-10: (trade name, manufactured by Nissinika Epoxy Manufacturing Co., Ltd., o-cresol novolac epoxy resin: epoxy equivalent is 210, softening point is 75 ° C to 85 ° C)
VG-3101L: (trade name, manufactured by Princtech, multifunctional epoxy resin: epoxy equivalent is 210, softening point is 39 ° C to 46 ° C)

（酚樹脂）
HE100C-30：（商品名，空氣水股份有限公司製造，酚樹脂：羥基當量為175、軟化點為79℃、吸水率為1質量%、加熱質量減少率為4質量%）
HE200C-10：（商品名，空氣水股份有限公司製造，酚樹脂：羥基當量為200、軟化點為65℃～76℃、吸水率為1質量%、加熱質量減少率為4質量%）
HE910-10：（商品名，空氣水股份有限公司製造，酚樹脂：羥基當量為101、軟化點為83℃、吸水率為1質量%、加熱質量減少率為3質量%）。(Phenol resin)
HE100C-30: (trade name, manufactured by Air Water Co., Ltd., phenol resin: hydroxyl equivalent is 175, softening point is 79 ° C, water absorption is 1% by mass, and heating mass reduction is 4% by mass)
HE200C-10: (trade name, manufactured by Air Water Co., Ltd., phenol resin: 200 hydroxyl equivalent, softening point 65 ° C to 76 ° C, water absorption rate 1% by mass, and heating mass reduction rate 4% by mass)
HE910-10: (trade name, manufactured by Air Water Co., Ltd., phenol resin: hydroxyl equivalent is 101, softening point is 83 ° C, water absorption is 1% by mass, and heating mass reduction is 3% by mass).

（無機填料）
SC2050-HLG：（商品名，雅都瑪（Admatechs）股份有限公司製造，二氧化矽填料分散液：平均粒徑為0.50 μm）
SC1030-HJA：（商品名，雅都瑪股份有限公司製造，二氧化矽填料分散液：平均粒徑為0.25 μm）
艾羅西爾（Aerosil）R972：（商品名，日本艾羅西爾（Aerosil）股份有限公司製造，二氧化矽：平均粒徑為0.016 μm）。(Inorganic filler)
SC2050-HLG: (trade name, manufactured by Admatechs Co., Ltd., silicon dioxide filler dispersion: average particle size is 0.50 μm)
SC1030-HJA: (trade name, manufactured by YaduMa Co., Ltd., silica dioxide filler dispersion: average particle size is 0.25 μm)
Aerosil R972: (trade name, manufactured by Japan Aerosil Co., Ltd., silicon dioxide: average particle size is 0.016 μm).

（丙烯酸橡膠）
HTR-860P-3CSP：（樣品名，長瀨化成股份有限公司製造，丙烯酸橡膠：重量平均分子量為80萬、縮水甘油基官能基單體比率為3莫耳%、Tg為12℃）
HTR-860P-30B-CHN：（樣品名，長瀨化成股份有限公司製造，丙烯酸橡膠：重量平均分子量為23萬、縮水甘油基官能基單體比率為8莫耳%、Tg為-7℃）(Acrylic rubber)
HTR-860P-3CSP: (Sample name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber: weight average molecular weight is 800,000, glycidyl functional monomer ratio is 3 mole%, Tg is 12 ° C)
HTR-860P-30B-CHN: (Sample name, manufactured by Nagase Chemical Co., Ltd., acrylic rubber: weight average molecular weight is 230,000, glycidyl functional monomer ratio is 8 mole%, Tg is -7 ° C)

（偶合劑）
A-189：（商品名，日本邁圖高新材料（Momentive Performance Materials Japan）有限責任公司製造，γ-巰基丙基三甲氧基矽烷）
A-1160：（商品名，日本邁圖高新材料有限責任公司製造，γ-脲基丙基三乙氧基矽烷）(Coupling agent)
A-189: (trade name, manufactured by Momentive Performance Materials Japan), γ-mercaptopropyltrimethoxysilane
A-1160: (trade name, manufactured by Momentive Advanced Materials Co., Ltd., γ-ureidopropyltriethoxysilane)

（硬化促進劑）
固唑（Curezol）2PZ-CN：（商品名，四國化成工業股份有限公司製造，1-氰基乙基-2-苯基咪唑）(Hardening accelerator)
Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[表1]
（單位：質量份）[Table 1]
(Unit: parts by mass)

其次，利用100目的過濾器對所獲得的清漆進行過濾，並進行真空脫泡。將真空脫泡後的清漆塗佈於作為基材膜且已實施脫模處理的聚對苯二甲酸乙二酯（PET）膜（厚度38 μm）上。以90℃下5分鐘、繼而140℃下5分鐘的兩階段對所塗佈的清漆進行加熱乾燥。如此而獲得於PET膜上具有處於B階段狀態的厚度60 μm的膜狀接著劑的接著片。Next, the obtained varnish was filtered with a 100-mesh filter and vacuum-defoamed. The vacuum-defoamed varnish was applied to a polyethylene terephthalate (PET) film (thickness: 38 μm) that had been subjected to a mold release process as a base film. The applied varnish was heat-dried in two stages of 5 minutes at 90 ° C and 5 minutes at 140 ° C. In this manner, an adhesive sheet having a film-like adhesive having a thickness of 60 μm in a B-stage state on a PET film was obtained.

＜各種物性的評價＞
如下所述對所獲得的膜狀接著劑進行評價。將評價結果示於表2中。＜ Evaluation of various physical properties ＞
The obtained film-like adhesive was evaluated as follows. The evaluation results are shown in Table 2.

[剪切彈性係數測定]
將基材膜自膜狀接著劑剝離去除，於厚度方向上衝壓為10 mm見方。將其準備多片並加以貼合，藉此而獲得10 mm見方、厚度360 μm的膜狀接著劑的評價用樣品。於動態黏彈性裝置ARES（日本TA儀器股份有限公司製造）上安置直徑8 mm的圓形鋁板夾具，利用該夾具來夾入所述評價用樣品。其後，一邊以頻率1 Hz對評價用樣品賦予5%的應變，一邊以5℃/分鐘的升溫速度自室溫（30℃）升溫至125℃並保持1小時後，以5℃/分鐘的升溫速度進而升溫至150℃並保持45分鐘。並且，記錄150℃下的剪切彈性係數的值。[Determination of Shear Elastic Coefficient]
The base film was peeled and removed from the film-like adhesive, and punched into a square of 10 mm in the thickness direction. A plurality of these were prepared and bonded, thereby obtaining a sample for evaluation of a film-shaped adhesive having a thickness of 10 mm square and a thickness of 360 μm. A circular aluminum plate jig having a diameter of 8 mm was placed on a dynamic viscoelastic device ARES (manufactured by TA Instruments Co., Ltd.), and the jig was used to clamp the evaluation sample. After that, while applying a strain of 5% to the evaluation sample at a frequency of 1 Hz, the temperature was raised from room temperature (30 ° C) to 125 ° C at a temperature rise rate of 5 ° C / min and held for 1 hour, and then the temperature was raised at 5 ° C / min. The temperature was further raised to 150 ° C and held for 45 minutes. And the value of the shear elasticity coefficient at 150 degreeC was recorded.

[剪切黏度測定]
以與剪切彈性係數測定相同的方式，一邊以頻率1 Hz對評價用樣品賦予5%的應變，一邊以5℃/分鐘的升溫速度自室溫（30℃）升溫至140℃，測定剪切黏度。並且，記錄80℃下的測定值。[Shear viscosity measurement]
In the same manner as the measurement of the coefficient of shear elasticity, while applying a 5% strain to the evaluation sample at a frequency of 1 Hz, the temperature was raised from room temperature (30 ° C) to 140 ° C at a temperature increase rate of 5 ° C / min, and the shear viscosity was measured. . The measured value at 80 ° C is recorded.

[硬化後的拉伸彈性係數測定]
將基材膜自膜狀接著劑剝離去除後，將膜狀接著劑切為4 mm寬、長30 mm。將其於120℃下加熱2小時、於170℃下加熱3小時，獲得使膜狀接著劑硬化的評價用樣品。其後，將評價用樣品安置於動態黏彈性裝置（製品名：羅吉爾（Rheogel）-E4000，UMB股份有限公司製造），並施加拉伸負荷，於頻率10 Hz、昇溫速度3℃/分鐘的條件下測定拉伸彈性係數。並且，記錄170℃～190℃下的測定值。[Determination of tensile elastic modulus after hardening]
After removing the base film from the film-shaped adhesive, the film-shaped adhesive was cut to a width of 4 mm and a length of 30 mm. This was heated at 120 ° C for 2 hours and at 170 ° C for 3 hours to obtain a sample for evaluation in which the film-shaped adhesive was hardened. Thereafter, the evaluation sample was placed in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UMB Co., Ltd.), and a tensile load was applied to the sample at a frequency of 10 Hz and a heating rate of 3 ° C / min. The tensile elasticity coefficient was measured under the conditions. The measured values at 170 ° C to 190 ° C are recorded.

[壓接後埋入性評價]
將接著片的膜狀接著劑貼合兩片而使厚度為120 μm，並將其於70℃下貼附於厚度100 μm的半導體晶圓（8吋）。其次，將該等切割為7.5 mm見方，獲得帶有接著片的半導體元件。
另一方面，將切割·黏晶一體型膜（日立化成股份有限公司製造，HR-9004-10（厚度10 μm））於70℃下貼附於厚度50 μm的半導體晶圓（8吋）。其次，將該等切割為3.0 mm見方，獲得帶有所述一體型膜的晶片。將帶有一體型膜的晶片於120℃、0.20 MPa、2秒鐘的條件下壓接於表面凹凸最大為6 μm的評價用基板後，於120℃下加熱2小時而使一體型膜半硬化。藉此而獲得帶有晶片的基板。
將帶有接著片的半導體元件於120℃、0.20 MPa、2秒鐘的條件下壓接於所獲得的帶有晶片的基板。此時，以之前所壓接的晶片位於帶有接著片的半導體元件的正中間的方式進行對位。對於所獲得的結構體，以與剪切彈性係數測定相同的方式，於125℃下加熱1小時、於150℃下加熱45分鐘。
對於加熱後自然放置冷卻至室溫的結構體，利用超音波C-SCAN圖像診斷裝置（因賽特（Insight）股份有限公司製造，產品編號IS350、探針：75 MHz）進行分析，確認壓接後埋入性。藉由以下基準來評價壓接後埋入性。
○：空隙面積相對於壓接膜的比例小於10%。
×：空隙面積相對於壓接膜的比例為10%以上。[Embedding evaluation after crimping]
Two sheets of the film-shaped adhesive were bonded to each other to a thickness of 120 μm, and the adhesive was attached to a semiconductor wafer (8 inches) having a thickness of 100 μm at 70 ° C. Next, these were cut into 7.5 mm squares to obtain a semiconductor element with a bonding sheet.
On the other hand, a dicing-bonding integrated film (manufactured by Hitachi Chemical Co., Ltd., HR-9004-10 (thickness: 10 μm)) was attached to a semiconductor wafer (8 inches) having a thickness of 50 μm at 70 ° C. Next, these were cut into 3.0 mm squares to obtain a wafer with the integrated film. The wafer with an integrated film was pressure-bonded to a substrate for evaluation with a maximum surface roughness of 6 μm under conditions of 120 ° C., 0.20 MPa, and 2 seconds, and then heated at 120 ° C. for 2 hours to semi-harden the integrated film. Thereby, a substrate with a wafer is obtained.
The semiconductor element with a bonding sheet was pressure-bonded to the obtained substrate with a wafer at 120 ° C., 0.20 MPa, and 2 seconds. At this time, alignment is performed so that the previously crimped wafer is located in the middle of the semiconductor element with the bonding wafer. The obtained structure was heated at 125 ° C for 1 hour and at 150 ° C for 45 minutes in the same manner as in the measurement of the shear elasticity coefficient.
The structure that was left to cool to room temperature after heating was analyzed using an ultrasonic C-SCAN image diagnostic device (Insight Corporation, product number IS350, probe: 75 MHz) to confirm the pressure. Embedded after being connected. The embedding property after crimping was evaluated by the following criteria.
○: The ratio of the void area to the pressure-bonding film is less than 10%.
×: The ratio of the void area to the pressure-bonding film is 10% or more.

[密封後空隙埋入性評價]
使用模製用密封材（日立化成股份有限公司製造，商品名：CEL-9700HF），將壓接後埋入性評價中所獲得的結構體的半導體元件等的搭載面密封。密封時使用模製成形機MH-705-1（山田尖端科技（APIC YAMADA）股份有限公司製造），密封條件設為175℃、6.9 MPa、120秒。以與壓接後埋入性評價相同的方式分析所獲得的密封樣品，進行密封後空隙埋入性的評價。評價基準如下。
○：空隙面積相對於壓接膜的比例小於5%。
×：空隙面積相對於壓接膜的比例為5%以上。[Evaluation of void embedment after sealing]
A molding sealing material (manufactured by Hitachi Chemical Co., Ltd., trade name: CEL-9700HF) was used to seal a mounting surface of a semiconductor element or the like of the structure obtained by embedding evaluation after compression bonding. For sealing, a molding machine MH-705-1 (manufactured by APIC YAMADA) was used, and the sealing conditions were set to 175 ° C, 6.9 MPa, and 120 seconds. The obtained sealed sample was analyzed in the same manner as the evaluation of the embedding property after crimping, and the evaluation of the void embedding property after sealing was performed. The evaluation criteria are as follows.
○: The ratio of the void area to the pressure-bonding film is less than 5%.
×: The ratio of the void area to the pressure-bonding film is 5% or more.

[翹曲量的評價]
以與壓接後埋入性評價相同的方式製作結構體。對該結構體於170℃下加熱3小時，使膜狀接著劑硬化後，利用表面粗糙度計，以8 mm的程度測定半導體元件的對角線方向上的高低差。將所獲得的測定值的最大值與最小值的差記錄為結構體的翹曲量。[Evaluation of the amount of warpage]
A structure was produced in the same manner as the evaluation of the embedding property after compression bonding. This structure was heated at 170 ° C. for 3 hours to harden the film-shaped adhesive, and then the height difference in the diagonal direction of the semiconductor element was measured with a surface roughness meter to an extent of 8 mm. The difference between the maximum value and the minimum value of the obtained measured values was recorded as the amount of warpage of the structure.

[表2]
[Table 2]

10‧‧‧膜狀接著劑10‧‧‧ film adhesive

14‧‧‧基板 14‧‧‧ substrate

20‧‧‧基材膜 20‧‧‧ substrate film

30‧‧‧覆蓋膜 30‧‧‧ cover film

40‧‧‧基材膜 40‧‧‧ substrate film

41‧‧‧接著劑 41‧‧‧ Adhesive

42‧‧‧樹脂（密封材） 42‧‧‧resin (sealing material)

50‧‧‧黏著劑層 50‧‧‧ Adhesive layer

60‧‧‧切割帶 60‧‧‧cut tape

84、94‧‧‧電路圖案 84, 94‧‧‧ circuit pattern

88‧‧‧第一導線 88‧‧‧first lead

90‧‧‧有機基板 90‧‧‧ organic substrate

98‧‧‧第二導線 98‧‧‧Second Lead

100、110、120、130‧‧‧接著片 100, 110, 120, 130‧‧‧ followed

200‧‧‧半導體裝置 200‧‧‧ semiconductor device

Wa‧‧‧第一半導體元件 Wa‧‧‧First Semiconductor Element

Waa‧‧‧第二半導體元件 Waa‧‧‧Second Semiconductor Element

圖1是表示本發明的實施形態的膜狀接著劑的圖。FIG. 1 is a view showing a film-shaped adhesive according to an embodiment of the present invention.

圖2是表示接著片的圖。 FIG. 2 is a diagram showing a continuous sheet.

圖3是表示另一接著片的圖。 FIG. 3 is a diagram showing another adhesive sheet.

圖4是表示又一接著片的圖。 FIG. 4 is a diagram showing still another film.

圖5是表示又一接著片的圖。 FIG. 5 is a diagram showing still another film.

圖6是表示半導體裝置的圖。 FIG. 6 is a diagram showing a semiconductor device.

圖7是表示本發明的實施形態的半導體裝置的製造方法的圖。 FIG. 7 is a diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

圖8是表示圖7的後續步驟的圖。 FIG. 8 is a diagram showing a step subsequent to FIG. 7.

圖9是表示圖8的後續步驟的圖。 FIG. 9 is a diagram showing a step subsequent to FIG. 8.

圖10是表示圖9的後續步驟的圖。 FIG. 10 is a diagram showing a step subsequent to FIG. 9.

圖11是表示圖10的後續步驟的圖。 FIG. 11 is a diagram showing a step subsequent to FIG. 10.

Claims (12)

一種半導體裝置的製造方法，其包括： 第一黏晶步驟，將第一半導體元件經由第一導線而電性連接於基板上； 層壓步驟，於較所述第一半導體元件的面積更大的第二半導體元件的單面上，貼附150℃下的剪切彈性係數為1.5 MPa以下的膜狀接著劑；以及 第二黏晶步驟，以所述膜狀接著劑覆蓋所述第一半導體元件的方式載置貼附有所述膜狀接著劑的第二半導體元件，並壓接所述膜狀接著劑，藉此而將所述第一導線及所述第一半導體元件埋入所述膜狀接著劑。A method for manufacturing a semiconductor device includes: A first die bonding step, electrically connecting the first semiconductor element to the substrate via the first wire; A laminating step, attaching a film-shaped adhesive having a shear modulus of elasticity at 150 ° C. of 1.5 MPa or less on one side of a second semiconductor element having a larger area than the first semiconductor element; and In the second die bonding step, the second semiconductor element to which the film-shaped adhesive is attached is placed so that the film-shaped adhesive covers the first semiconductor element, and the film-shaped adhesive is pressure-bonded. Then, the first lead and the first semiconductor element are embedded in the film-shaped adhesive. 如申請專利範圍第1項所述的製造方法，其中所述膜狀接著劑的硬化後的170℃～190℃下的拉伸彈性係數為15 MPa以下。The manufacturing method according to item 1 of the scope of patent application, wherein the film-shaped adhesive has a tensile modulus of elasticity at 170 ° C. to 190 ° C. of 15 MPa or less. 如申請專利範圍第1項或第2項所述的製造方法，其中所述膜狀接著劑的80℃下的剪切黏度為15000 Pa·s以下。The manufacturing method according to item 1 or item 2 of the scope of patent application, wherein the film-shaped adhesive has a shear viscosity at 80 ° C. of 15,000 Pa · s or less. 如申請專利範圍第1項至第3項中任一項所述的製造方法，其中所述膜狀接著劑包含丙烯酸樹脂及環氧樹脂。The manufacturing method according to any one of claims 1 to 3, wherein the film-shaped adhesive includes an acrylic resin and an epoxy resin. 如申請專利範圍第4項所述的製造方法，其中所述丙烯酸樹脂包含重量平均分子量為10萬～50萬的第一丙烯酸樹脂、及重量平均分子量為60萬～100萬的第二丙烯酸樹脂，且以丙烯酸樹脂的總質量為基準，所述第一丙烯酸樹脂的含量為50質量%以上。The manufacturing method according to item 4 of the scope of patent application, wherein the acrylic resin includes a first acrylic resin having a weight average molecular weight of 100,000 to 500,000 and a second acrylic resin having a weight average molecular weight of 600,000 to 1 million, And based on the total mass of the acrylic resin, the content of the first acrylic resin is 50% by mass or more. 如申請專利範圍第1項至第5項中任一項所述的製造方法，其中所述膜狀接著劑包含無機填料及有機填料的至少一者。The manufacturing method according to any one of claims 1 to 5, wherein the film-shaped adhesive contains at least one of an inorganic filler and an organic filler. 一種膜狀接著劑，其於第一半導體元件經由第一導線而電性連接於基板上，並且於所述第一半導體元件上壓接較所述第一半導體元件的面積更大的第二半導體元件而成的半導體裝置中，用於壓接所述第二半導體元件並且埋入所述第一導線及所述第一半導體元件，且150℃下的剪切彈性係數為1.5 MPa以下。A film-shaped adhesive is electrically connected to a substrate on a first semiconductor element via a first wire, and a second semiconductor having a larger area than the first semiconductor element is crimped onto the first semiconductor element. In a semiconductor device formed by an element, the second semiconductor element is crimped and the first wire and the first semiconductor element are embedded, and a shear elastic coefficient at 150 ° C. is 1.5 MPa or less. 如申請專利範圍第7項所述的膜狀接著劑，其硬化後的170℃～190℃下的拉伸彈性係數為15 MPa以下。The film-like adhesive according to item 7 of the scope of application for a patent has a tensile modulus of elasticity at 170 ° C. to 190 ° C. of 15 MPa or less. 如申請專利範圍第7項或第8項所述的膜狀接著劑，其80℃下的剪切黏度為15000 Pa·s以下。The film adhesive according to item 7 or item 8 of the scope of application for a patent has a shear viscosity at 80 ° C. of 15,000 Pa · s or less. 如申請專利範圍第7項至第9項中任一項所述的膜狀接著劑，其包含丙烯酸樹脂及環氧樹脂。The film-shaped adhesive according to any one of claims 7 to 9 of the scope of patent application, which comprises an acrylic resin and an epoxy resin. 如申請專利範圍第10項所述的膜狀接著劑，其中所述丙烯酸樹脂包含重量平均分子量為10萬～50萬的第一丙烯酸樹脂、及重量平均分子量為60萬～100萬的第二丙烯酸樹脂，且以丙烯酸樹脂的總質量為基準，所述第一丙烯酸樹脂的含量為50質量%以上。The film-like adhesive according to item 10 of the application, wherein the acrylic resin comprises a first acrylic resin having a weight average molecular weight of 100,000 to 500,000 and a second acrylic acid having a weight average molecular weight of 600,000 to 1 million Resin, and based on the total mass of the acrylic resin, the content of the first acrylic resin is 50% by mass or more. 如申請專利範圍第7項至第11項中任一項所述的膜狀接著劑，其包含無機填料及有機填料的至少一者。The film-shaped adhesive according to any one of claims 7 to 11 in the scope of patent application, which comprises at least one of an inorganic filler and an organic filler.
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