TW201938394A - Method of manufacturing laminate, laminate, and method of manufacturing electronic device to suppress warpage of a laminate having electronic parts - Google Patents

Method of manufacturing laminate, laminate, and method of manufacturing electronic device to suppress warpage of a laminate having electronic parts Download PDF

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Publication number
TW201938394A
TW201938394A TW108100792A TW108100792A TW201938394A TW 201938394 A TW201938394 A TW 201938394A TW 108100792 A TW108100792 A TW 108100792A TW 108100792 A TW108100792 A TW 108100792A TW 201938394 A TW201938394 A TW 201938394A
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manufacturing
laminated body
layer
substrate
support
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TW108100792A
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Chinese (zh)
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TWI784117B (en
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稲尾吉浩
山本毅
岩田泰昌
中村彰彦
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日商東京應化工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process

Abstract

The subject of this invention is to suppress warpage of a laminate having electronic parts. The method of manufacturing a laminate comprises the following steps of: laminating a substrate (5) having an electronic part (E) molded with a molding material (M) and a support body (2) having a thermal expansion coefficient of 3 ppm/K or more and 14 ppm/K or less via a separation layer (3) which is denatured by a predetermined treatment.

Description

層積體之製造方法,層積體,及電子裝置之製造方法Method for manufacturing laminated body, method for manufacturing laminated body, and electronic device

本發明,係關於層積體之製造方法,層積體,及電子裝置之製造方法。The present invention relates to a method for manufacturing a laminate, a method for manufacturing a laminate, and an electronic device.

在半導體領域中,係近年來,使用在晶圓級、面板級填埋電子零件的封裝。例如,扇出型封裝,係「半導體晶片(晶片)上所形成之再配線擴展至比晶片的外形更外側而形成」之構造的封裝,且由於可實現封裝之小型化或配線之高密度化,故備受矚目。作為像這樣的扇出型封裝之半導體之製造方法,已知如下述般的方法:在將複數個電子零件搭載於支撐體,且由模製材料進行密封而形成配線構造(再配線)後,從層積體去除支撐體並進行單片化(例如,下述之專利文獻1)。
[先前技術文獻]
[專利文獻]
In the field of semiconductors, in recent years, packaging of electronic components at the wafer level and panel level has been used. For example, a fan-out package is a package with a structure that "the rewiring formed on the semiconductor wafer (wafer) is extended to the outside of the outer shape of the wafer", and it is possible to reduce the size of the package or the density of the wiring , So much attention. As a method for manufacturing a semiconductor in a fan-out package like this, a method is known in which a plurality of electronic components are mounted on a support and sealed with a molding material to form a wiring structure (rewiring). The support is removed from the laminate and singulated (for example, Patent Document 1 described below).
[Prior technical literature]
[Patent Literature]

[專利文獻1]日本特開2008-306071號公報[Patent Document 1] Japanese Patent Laid-Open No. 2008-306071

[本發明所欲解決之課題][Problems to be Solved by the Invention]

以往,如專利文獻1般之具備有電子零件的層積體,係有發生翹曲的情形。當層積體發生翹曲時,則產生位置偏移等,從而容易在電子零件發生不良並導致良率變低。尤其,在進行封裝之小型化、配線之高密度化的情況下,容易發生電子零件之不良。因此,本案發明者,係針對如上述般的層積體之各部的材料等進行研究,結果發現可藉由使用預定熱膨脹係數之支撐體的方式,抑制層積體之翹曲的情形,從而完成本發明。Conventionally, a laminated body provided with an electronic component like Patent Document 1 has been subject to warpage. When the laminated body is warped, a position shift or the like occurs, which is likely to cause defects in the electronic component and lower the yield. In particular, when the size of a package is reduced and the density of wiring is increased, defects in electronic components are liable to occur. Therefore, the inventor of the present case conducted research on the materials and the like of each part of the laminate as described above, and found that the warpage of the laminate can be suppressed by using a support having a predetermined thermal expansion coefficient, thereby completing this invention.

有鑑於如上述般的情事,本發明,係以抑制具有電子零件之層積體翹曲的情形為目的。

[用以解決課題之手段]
In view of the circumstances as described above, the present invention aims to suppress the warpage of a laminated body having electronic components.

[Means to solve the problem]

根據本發明之第1態樣,提供一種層積體之製造方法,係包含有如下述之步驟:經由藉由預定處理而產生變質的分離層,層積具有由模製材料所模製之電子零件的基板與熱膨脹係數為3ppm/K以上14ppm/K以下的支撐體。According to a first aspect of the present invention, there is provided a method for manufacturing a laminated body, which includes the following steps: The laminated layer has electrons molded from a molding material through a separation layer that is deteriorated by a predetermined process. The substrate of the component and the support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less.

根據本發明之第2態樣,提供一種層積體,其係依熱膨脹係數為3ppm/K以上14ppm/K以下的支撐體與藉由預定處理而產生變質的分離層與接著層與基板該順序層積而成。According to a second aspect of the present invention, a laminated body is provided, which is based on the order of a support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less, and a separation layer, an adhesive layer, and a substrate that are deteriorated by a predetermined process. Laminated.

根據本發明之第3態樣,提供一種電子裝置之製造方法,其係包含:藉由上述之層積體之製造方法來製造層積體;使分離層變質,從層積體分離支撐體;及從基板去除接著層及分離層,獲得含有電子零件的電子裝置。

[發明之效果]
According to a third aspect of the present invention, there is provided a method for manufacturing an electronic device, which includes: manufacturing the laminated body by the above-mentioned manufacturing method of the laminated body; deteriorating the separation layer, and separating the support body from the laminated body; And removing the adhesion layer and the separation layer from the substrate to obtain an electronic device containing electronic components.

[Effect of the invention]

本發明之層積體之製造方法,係可製造抑制了翹曲的層積體。又,本發明之層積體,係翹曲得到抑制。又,由於本發明之電子裝置之製造方法,係使用抑制了翹曲的層積體,因此,可提高所製造之電子零件的良率。The manufacturing method of the laminated body of this invention can manufacture the laminated body which suppressed the curvature. Moreover, in the laminated body of the present invention, warping is suppressed. In addition, since the method of manufacturing the electronic device of the present invention uses a laminated body in which warpage is suppressed, the yield of the manufactured electronic component can be improved.

[實施形態]
說明關於實施形態。在以下的說明中,適宜地參照圖1等所示的XYZ正交座標系統。該XYZ正交座標系統,係X方向及Y方向為水平方向(橫方向),Z方向為垂直方向。又,在各方向上,適宜地將與箭頭之前端相同側稱為+側(例如+Z側),並將與箭頭之前端相反側稱為-側(例如-Z側)。例如,在垂直方向(Z方向)上,上方為+Z側,下方為-Z側。此外,在圖式中,係為了說明實施形態,而示意地記載一部分或全部,並且將一部分放大或強調而記載等,且含有適宜地變更縮尺所表現的部分。
[Embodiment]
The embodiment will be described. In the following description, reference is made to the XYZ orthogonal coordinate system shown in FIG. 1 and the like as appropriate. In the XYZ orthogonal coordinate system, the X and Y directions are horizontal (horizontal), and the Z direction is vertical. In each direction, the same side as the front of the arrow is referred to as the + side (for example, + Z side), and the side opposite to the front of the arrow is referred to as the-side (for example, the -Z side). For example, in the vertical direction (Z direction), the upper side is the + Z side, and the lower side is the -Z side. In addition, in the drawings, a part or the whole is schematically described for explaining the embodiment, a part is enlarged or emphasized, etc., and a part expressed by appropriately changing the scale is included.

[層積體]
說明關於本實施形態的層積體。圖1,係從表示本實施形態之層積體的-Y側所觀看的剖面圖。層積體1,係如圖1所示般,具備有:支撐體2;分離層3;接著層4;及基板5,具有電子零件E。在層積體1中,係依支撐體2、分離層3、接著層4及具有電子零件E的基板5該順序層積而成。層積體1,係用於製造具備有電子零件E之電子裝置10(參閱圖9(B))。層積體1,係包含「電子零件E上所形成之再配線層R擴展至比電子零件E的外形更外側而形成」之構造即所謂的扇出型封裝之構造。另外,在本實施形態中,雖係將層積體1設成為包含所謂的扇出型面板級封裝之構造者而進行說明,但亦可為其他態樣。
[Laminated body]
The laminated body of this embodiment is demonstrated. FIG. 1 is a cross-sectional view as viewed from the −Y side of the laminated body showing this embodiment. As shown in FIG. 1, the laminated body 1 includes: a support 2; a separation layer 3; an adhesive layer 4; and a substrate 5 having an electronic component E. In the laminated body 1, the support 2, the separation layer 3, the adhesive layer 4, and the substrate 5 having the electronic component E are laminated in this order. The laminated body 1 is used for manufacturing the electronic device 10 provided with the electronic component E (refer FIG. 9 (B)). The laminated body 1 is a so-called fan-out package structure including a structure in which the "rewiring layer R formed on the electronic component E is expanded to be more outward than the external shape of the electronic component E". In this embodiment, the laminated body 1 is described as having a structure including a so-called fan-out panel-level package, but other aspects are also possible.

(支撐體)
支撐體2,係支撐分離層3、接著層4及基板5。在支撐體2之一方的面(在圖1中,係+Z側的面),係層積有分離層3。支撐體2之大小、厚度及形狀,係可分別任意地設定。例如,支撐體2,係可將一邊或直徑等的外形之大小設成為10mm以上1000mm以下左右。又,例如,從抑制層積體1之翹曲的觀點來看,支撐體2之厚度,係設成為400μm以上1200μm以下為較佳。又,從抑制層積體1之翹曲的觀點來看,支撐體2之厚度,係比後述說明之基板5的厚度更厚為較佳。又,例如,支撐體2之形狀,係其外形可設成為矩形狀、圓形狀等的板狀等的形狀。
(Support)
The support 2 supports the separation layer 3, the adhesion layer 4 and the substrate 5. A separation layer 3 is laminated on one of the surfaces of the support 2 (the surface on the + Z side in FIG. 1). The size, thickness, and shape of the support 2 can be arbitrarily set. For example, the size of the outer shape of the support body 2 such as one side or diameter can be set to about 10 mm to 1000 mm. In addition, for example, from the viewpoint of suppressing the warpage of the laminate 1, the thickness of the support 2 is preferably set to be 400 μm or more and 1200 μm or less. From the viewpoint of suppressing warpage of the laminated body 1, the thickness of the support 2 is preferably thicker than the thickness of the substrate 5 described later. In addition, for example, the shape of the support 2 may be a shape such as a plate shape such as a rectangular shape or a circular shape.

支撐體2,係熱膨脹係數(coefficient of thermal expansion, CTE)為3ppm/K以上14ppm/K以下、4ppm/K以上9ppm/K以下為較佳、5ppm/K以上8ppm/K以下為更佳。在支撐體2之熱膨脹係數為上述範圍的情況下,可抑制層積體1之翹曲。吾人認為這是因為在支撐體2之熱膨脹係數為上述範圍的情況下,會與基板5之熱膨脹係數相匹配的緣故。其中,支撐體2之熱膨脹係數與基板5之熱膨脹係數,係在將(支撐體2之熱膨脹係數/基板5之熱膨脹係數)設成為X時,X,係滿足0.5≦X≦1.2為較佳,且滿足0.8≦X≦1.0為更佳。另外,基板5之熱膨脹係數,係4ppm/K以上12ppm/K以下為較佳,且5ppm/K以上10ppm/K以下為更佳。另外,支撐體2及基板5之熱膨脹係數,係可分別藉由習知的熱膨脹率測定裝置等來求出。
又,在本發明中,存在如下述般的情形:支撐體2上所設置之模製材料M的膨脹收縮行為對於層積體1之翹曲具有支配性影響。在該情況下,基板5之熱膨脹係數,係可視為與模製材料M的熱膨脹係數相等。
在像這樣的觀點下,模製材料M之熱膨脹係數,係4ppm/K以上12ppm/K以下為較佳,且5ppm/K以上10ppm/K以下為更佳。
另外,該模製材料M之熱膨脹係數,係可另外藉由使其與用於密封用之組成物硬化的方式獲得試驗片,並藉由熱膨脹率測定裝置分析該試驗片而求出。
The support 2 has a coefficient of thermal expansion (CTE) of 3 ppm / K or more and 14 ppm / K or less, 4 ppm / K or more and 9 ppm / K or less is more preferable, and 5 ppm / K or more and 8 ppm / K or less is more preferable. When the thermal expansion coefficient of the support 2 is in the above range, the warpage of the laminated body 1 can be suppressed. I think this is because when the thermal expansion coefficient of the support 2 is in the above range, it will match the thermal expansion coefficient of the substrate 5. Among them, the coefficient of thermal expansion of the support 2 and the coefficient of thermal expansion of the substrate 5 are set to (X coefficient of thermal expansion of the support 2 / coefficient of thermal expansion of the substrate 5) X, and X is preferably 0.5 ≦ X ≦ 1.2, It is more preferable to satisfy 0.8 ≦ X ≦ 1.0. The thermal expansion coefficient of the substrate 5 is preferably 4 ppm / K or more and 12 ppm / K or less, and more preferably 5 ppm / K or more and 10 ppm / K or less. The thermal expansion coefficients of the support 2 and the substrate 5 can be obtained by a conventional thermal expansion coefficient measuring device or the like.
In addition, in the present invention, there is a case where the expansion and contraction behavior of the molding material M provided on the support 2 has a dominant influence on the warpage of the laminated body 1. In this case, the thermal expansion coefficient of the substrate 5 can be regarded as being equal to the thermal expansion coefficient of the molding material M.
From such a viewpoint, the thermal expansion coefficient of the molding material M is preferably 4 ppm / K or more and 12 ppm / K or less, and more preferably 5 ppm / K or more and 10 ppm / K or less.
The thermal expansion coefficient of the molding material M can be obtained by hardening the test piece with a composition for sealing, and analyzing the test piece with a thermal expansion coefficient measuring device.

支撐體2之形成材料,雖係不特別限定而為任意,但後述說明之分離層3,係在藉由光而產生變質的情況下,由使分離層3變質之波長的光能透過之材料所形成為較佳。在該情況下,由於可通過支撐體2,對分離層3照射使分離層3變質的光,因此,可簡單地施予使分離層3變質的處理(參閱圖8(B))。The material for forming the support 2 is not particularly limited and may be arbitrary, but the separation layer 3 described later is a material that is transmitted by light of a wavelength at which the separation layer 3 is deteriorated when the deterioration is caused by light. The formation is better. In this case, since the separation layer 3 can be irradiated with light that deteriorates the separation layer 3 through the support 2, a treatment for deteriorating the separation layer 3 can be easily performed (see FIG. 8 (B)).

如上述般的支撐體2之形成材料,係例如玻璃、陶瓷、單晶材料等。其中,從材料之成本、材料之取得容易性等的觀點來看,支撐體2之形成材料,係玻璃為較佳。另外,在支撐體2之形成材料為玻璃的情況下,玻璃之組成,係不特別限定而為任意。像這樣的玻璃,係可使用習知之玻璃。The material for forming the support 2 as described above is, for example, glass, ceramic, or single crystal material. Among these, from the viewpoints of the cost of the material, the ease of obtaining the material, and the like, the forming material of the support 2 is preferably glass. In addition, when the forming material of the support 2 is glass, the composition of the glass is not particularly limited and is arbitrary. As such a glass, a conventional glass can be used.

(分離層)
分離層3,係被形成於支撐體2上。分離層3,係在層積體1上,被形成於支撐體2與接著層4(基板5)之間。分離層3,係藉由預定處理而產生變質。藉此,層積體1,係可藉由使分離層3變質的方式,使支撐體2與基板5分離。例如,分離層3,係可使用藉由光之吸收、加熱、使分離層3變質(例如,分解、溶解)之與化合物的作用而產生變質者(材料)。在分離層3藉由光之吸收而產生變質的情況下,可簡單地施予使分離層3特異性地變質的處理。
(Separation layer)
The separation layer 3 is formed on the support 2. The separation layer 3 is formed on the laminated body 1 and is formed between the support 2 and the bonding layer 4 (substrate 5). The separation layer 3 is deteriorated by a predetermined process. Thereby, the laminated body 1 can separate the support body 2 and the substrate 5 by modifying the separation layer 3. For example, as the separation layer 3, a substance (material) that causes deterioration by the action of a compound by absorbing (heating) or deteriorating (eg, decomposing or dissolving) the separation layer 3 can be used. When the separation layer 3 is degraded by absorption of light, a treatment for specifically deteriorating the separation layer 3 can be simply performed.

另外,在本說明書中,分離層3「產生變質」,係意味著變化成與分離層3相接之層的接著力降低之狀態的情形。分離層3,係變質成分離層3受到些許外力而被破壞之狀態為較佳。作為變質之結果,分離層3,係失去變質之前的強度或接著性。例如,分離層3,係藉由變質而變脆。分離層3之變質,係作為上述之預定處理的結果而產生,並可進行控制。在本實施形態中,分離層3,係被設定為藉由預定處理,使支撐體2相對於分離層3移動,藉此,變質成分離層3被破壞的程度。藉此,層積體1,係可使基板5從支撐體2輕易分離。In addition, in this specification, the "deterioration" of the separation layer 3 means the case where it changed to the state where the adhesive force of the layer which contacts the separation layer 3 was reduced. The separation layer 3 is preferably degraded to a state where the separation layer 3 is damaged by some external force. As a result of the deterioration, the separation layer 3 loses its strength or adhesion before the deterioration. For example, the separation layer 3 becomes brittle by being modified. The deterioration of the separation layer 3 is caused as a result of the above-mentioned predetermined processing and can be controlled. In the present embodiment, the separation layer 3 is set to move the support 2 relative to the separation layer 3 by a predetermined process, thereby deteriorating to the extent that the separation layer 3 is destroyed. Thereby, the laminated body 1 enables the substrate 5 to be easily separated from the support 2.

分離層3之形成材料,係不特別限定而為任意。在分離層3之形成材料為藉由光之吸收而產生變質的材料之情況下,可使用國際公開第2013/008540號所記載的材料即氟碳化物、於其重複單位中包含具有光吸收性之構造的聚合體、無機物、具有紅外線吸收性之構造的化合物等。在分離層3之形成材料為上述的材料之情況下,因吸收光而產生變質且失去吸收光之前的強度或接著性,並可藉由施加些許外力(例如,使支撐體2相對於分離層3移動等)進行破壞,並容易分離支撐體2與基板5。另外,在分離層3之形成材料為藉由光之吸收而產生變質的材料之情況下,光之吸收率是80%以上為較佳。又,在分離層3為藉由光之吸收而產生變質的材料之情況下,使變質產生之光的波長為任意。在分離層3為藉由光之吸收而產生變質的材料之情況下,分離層3,係例如藉由吸收從雷射所照射的光而產生變質。The material for forming the separation layer 3 is not particularly limited and is arbitrary. When the material forming the separation layer 3 is a material that is deteriorated by absorption of light, fluorocarbons, which are materials described in International Publication No. 2013/008540, can be used, and the repeating unit includes light-absorbing properties. Polymers with inorganic structures, compounds with infrared-absorbing structures, etc. In the case where the formation material of the separation layer 3 is the above-mentioned material, it is deteriorated due to absorption of light and loses its strength or adhesiveness before absorption of light, and a slight external force can be applied (for example, the support 2 is opposed to the separation layer). 3 movement, etc.) to break and easily separate the support 2 and the substrate 5. In addition, when the material forming the separation layer 3 is a material that is deteriorated by absorption of light, it is preferable that the absorption rate of light is 80% or more. When the separation layer 3 is a material that undergoes deterioration due to the absorption of light, the wavelength of the light caused by the deterioration is made arbitrary. In the case where the separation layer 3 is a material that is deteriorated by absorption of light, the separation layer 3 is deteriorated, for example, by absorbing light irradiated from a laser.

又,在分離層3之形成材料為藉由加熱而產生變質的材料之情況下,例如可使用以預定溫度而產生變質之習知的熱分解性樹脂。在該情況下,分離層3產生變質之預定溫度,係可藉由層積體1之製造方法適宜地設定,並藉由熱分解性樹脂之材料進行調整。When the material forming the separation layer 3 is a material that undergoes deterioration by heating, for example, a conventional thermally decomposable resin that undergoes deterioration at a predetermined temperature may be used. In this case, the predetermined temperature at which the separation layer 3 is deteriorated can be appropriately set by the manufacturing method of the laminated body 1 and adjusted by the material of the thermally decomposable resin.

又,分離層3,係藉由預定之溶劑而溶解的材料為較佳,以便容易從基板5進行去除。溶解分離層3之溶劑,雖係不特別限定而為任意,但例如在分離層3為吸收上述之光而產生變質的材料之情況下,可使用包含一級、二級、三級之脂肪族胺、脂環胺、芳香族胺、雜環胺等的胺化合物等的溶劑。The separation layer 3 is preferably a material that is dissolved by a predetermined solvent so as to be easily removed from the substrate 5. Although the solvent that dissolves the separation layer 3 is not particularly limited and is arbitrary, for example, when the separation layer 3 is a material that deteriorates by absorbing the light described above, a primary, secondary, or tertiary aliphatic amine may be used. And amine compounds such as alicyclic amines, aromatic amines, and heterocyclic amines.

分離層3之厚度,雖係不特別限定,但例如0.05μm以上50μm以下的範圍為較佳。在分離層3之厚度為上述範圍的情況下,可藉由簡單之處理(例如,短時間之光的照射及低能量之光的照射等),使分離層3更確實地變質。Although the thickness of the separation layer 3 is not particularly limited, a range of, for example, 0.05 μm to 50 μm is preferable. When the thickness of the separation layer 3 is in the above range, the separation layer 3 can be more reliably deteriorated by simple processing (for example, irradiation of light for a short time and irradiation of light with low energy, etc.).

(接著層)
接著層4,係被形成於分離層3上。接著層4,係在層積體1上,被形成分離層3與基板5之間。接著層4,係用於接著分離層3與基板5。
(Adjacent layer)
The next layer 4 is formed on the separation layer 3. The next layer 4 is tied to the laminated body 1 and is formed between the separation layer 3 and the substrate 5. The adhesion layer 4 is used to adhere the separation layer 3 and the substrate 5.

接著層4,係由熱可塑性之材料所構成為較佳。在接著層4由熱可塑性之材料所構成的情況下,由於能以藉由熱使其溶解並冷卻的方式進行硬化,因此,製造時之操作、控制較為容易。接著層4,係模數(拉伸應力)為0.05MPa以上5.00MPa以下為較佳,且0.1MPa以上3.00MPa以下為更佳。在接著層4之模數為上述範圍的情況下,可抑制接著層4所致之層積體1的翹曲。The next layer 4 is preferably made of a thermoplastic material. In the case where the adhesive layer 4 is made of a thermoplastic material, it can be hardened by dissolving and cooling by heat, so that it is easy to handle and control during manufacture. The layer 4 preferably has a system modulus (tensile stress) of 0.05 MPa to 5.00 MPa, and more preferably 0.1 MPa to 3.00 MPa. When the modulus of the adhesive layer 4 is in the above range, the warpage of the laminated body 1 caused by the adhesive layer 4 can be suppressed.

接著層4之形成材料,係不特別限定而為任意。例如,接著層4之形成材料,係具有接著性之樹脂,其中,烴類樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂、彈性體樹脂、聚碸系樹脂之任一或該些之組合的樹脂為較佳。接著層4,係藉由預定之溶劑而溶解的材料為較佳,以便容易從基板5進行去除。溶解接著層4之溶劑,雖係不特別限定而為任意,但例如可設成為己烷、庚烷、辛烷、壬烷、異壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等之直鏈狀烴、碳數4至15之分支鏈狀之烴,例如環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等之環狀烴,對-薄荷烷、鄰-薄荷烷、間-薄荷烷、二苯基甲烷等。像這樣的接著層4,係例如可使用TOKYO OHKA KOGYO股份有限公司製、TZNR(註冊商標)-A4017、A3007等來形成。The material for the formation of the next layer 4 is not particularly limited and is arbitrary. For example, the material for forming the adhesive layer 4 is a resin having adhesive properties. Among them, any of a hydrocarbon resin, an acrylic-styrene resin, a maleimide resin, an elastomer resin, and a polyfluorene resin. A combination of these resins is preferred. The next layer 4 is preferably a material which is dissolved by a predetermined solvent so as to be easily removed from the substrate 5. The solvent for dissolving the adhesive layer 4 is not particularly limited and is arbitrary, but may be, for example, hexane, heptane, octane, nonane, isononane, methyloctane, decane, undecane, ten Dioxane, tridecane, etc. straight chain hydrocarbons, branched chain hydrocarbons with 4 to 15 carbons, such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, etc. Hydrocarbons such as p-menthane, o-menthane, m-menthane, diphenylmethane and the like. Such an adhesive layer 4 can be formed using, for example, TOKYO OHKA KOGYO Co., Ltd., TZNR (registered trademark) -A4017, A3007, and the like.

接著層4之厚度,雖係不特別限定,但例如從接著性、接著層4之去除之容易度的觀點來看, 10μm以上150μm以下為較佳。Although the thickness of the adhesive layer 4 is not particularly limited, for example, from the viewpoints of adhesiveness and ease of removal of the adhesive layer 4, 10 μm to 150 μm is preferable.

另外,接著層4,係亦可具有上述之分離層3的特性即藉由預定處理而產生變質的特性。亦即,分離層3亦可兼作為接著層4。在該情況下,層積體1,係亦可不具備有接著層4。像這樣的分離層3之形成材料,係例如將吸收光之材料混合於具有接著性之樹脂的材料等,例如將碳黑等混合於丙烯酸系紫外線硬化樹脂的材料、將玻璃泡之紅外線吸收材料等混合於黏著性樹脂的材料等。In addition, the adhesive layer 4 may have the characteristics of the separation layer 3 described above, that is, characteristics that are deteriorated by a predetermined process. That is, the separation layer 3 may also serve as the adhesion layer 4. In this case, the laminated body 1 may not be provided with the adhesive layer 4. The material for forming the separation layer 3 is, for example, a material that mixes light absorbing material with a resin having adhesive properties. For example, a material that mixes carbon black and the like with an acrylic ultraviolet curable resin, or an infrared absorbing material with glass bubbles. Materials such as those mixed with adhesive resin.

(基板)
基板5,係被形成於接著層4上。基板5,係具有由模製材料M所模製(密封)之複數個電子零件E、再配線層R(RDL(Redistribution Layer))及凸塊B。本實施形態之基板5,係具有扇出型封裝構造的密封體基板。基板5,係被單片化(切割)而成為複數個電子裝置10(參閱圖9(B))。
在此,接著層4,係其大部分被「藉由具備於該基板5中之模製材料M與電子零件E的組合所斷續構成」之構件被覆。
(Substrate)
The substrate 5 is formed on the adhesion layer 4. The substrate 5 includes a plurality of electronic parts E, a redistribution layer R (RDL (Redistribution Layer)), and a bump B that are molded (sealed) from a molding material M. The substrate 5 of the present embodiment is a sealed substrate having a fan-out package structure. The substrate 5 is singulated (cut) into a plurality of electronic devices 10 (see FIG. 9 (B)).
Here, the next layer 4 is mostly covered with a member "constituted by the combination of the molding material M and the electronic component E provided in the substrate 5".

各電子零件E,係由模製材料M所模製。模製材料M,係以覆蓋電子零件E的方式,進行模製。模製材料M,係在各電子零件E上,對接著層4之相反面(+Z側的面)及側面(±X側的面及±Y側的面)進行模製。模製材料M之厚度,係不特別限定而為任意。模製材料M之形成材料,係不特別限定而為任意。模製材料M之形成材料,係例如環氧系的樹脂、矽系的樹脂等。又,電子零件E,係不特別限定而為任意。例如,電子零件E,係半導體晶片、MEMS(Micro Electro Mechanical Systems)、電晶體、電容、電阻等。另外,複數個電子零件E,係亦可為相同種類或不同種類。像這樣的由模製材料M所模製之電子零件E,係例如亦可為由模製材料M所模製之複數個電子零件E(模塑晶圓),或亦可為由模製材料M所模製之各個電子零件E。又,由模製材料M所模製之電子零件E,係亦可為單層,或亦可為多層。Each electronic component E is molded from a molding material M. The molding material M is molded so as to cover the electronic component E. The molding material M is formed on each electronic component E, and the opposite surface (the surface on the + Z side) and the side surface (the surface on the ± X side and the surface on the ± Y side) of the bonding layer 4 are molded. The thickness of the molding material M is not particularly limited and is arbitrary. The forming material of the molding material M is not particularly limited and is arbitrary. The forming material of the molding material M is, for example, an epoxy resin, a silicon resin, or the like. The electronic component E is not particularly limited and is arbitrary. For example, the electronic component E is a semiconductor wafer, a MEMS (Micro Electro Mechanical Systems), a transistor, a capacitor, or a resistor. In addition, the plurality of electronic components E may be the same type or different types. The electronic component E molded from the molding material M as described above may be, for example, a plurality of electronic components E (molded wafer) molded from the molding material M, or may be a molding material. Each electronic part E molded by M. In addition, the electronic component E molded by the molding material M may be a single layer or a multilayer.

再配線層R,係構成連接電子零件E之端子T等的配線之薄膜的配線體。再配線層R,係在介電質Ra上,藉由導電體Rb形成有配線者。再配線層R之配線構造,係可任意地設定。例如,再配線層R,係亦可為單層,或亦可為複數層的構造。介電質Ra及導電體Rb之材料,係不特別限定而為任意。介電質Ra之材料,係例如聚醯亞胺系樹脂、氧化矽(SiOx )、感光性環氧等的感光性樹脂等。導電體Rb之材料,係例如鋁、銅、鈦、鎳、金等的金屬等。再配線層R之厚度,係不特別限定而為任意,例如,從穩定性、基板5之薄膜化的觀點來看,被設定為數μm以上數10μm左右。The rewiring layer R is a wiring body that constitutes a thin film to which wiring such as the terminal T of the electronic component E is connected. The rewiring layer R is formed on the dielectric Ra, and wiring is formed by the conductor Rb. The wiring structure of the redistribution layer R can be arbitrarily set. For example, the redistribution layer R may have a single-layer structure or a plurality of layers. The material of the dielectric Ra and the conductor Rb is not particularly limited and is arbitrary. The material of the dielectric Ra is, for example, a polyimide-based resin, a silicon oxide (SiO x ), or a photosensitive resin such as a photosensitive epoxy. The material of the conductor Rb is, for example, a metal such as aluminum, copper, titanium, nickel, or gold. The thickness of the redistribution layer R is not particularly limited and is arbitrary. For example, from the viewpoint of stability and thinning of the substrate 5, the thickness is set to several μm or more and several 10 μm.

凸塊B,係被連接於再配線層R而形成,並用於與其他電子零件之連接等的電極。凸塊B之形狀、大小、種類,係不特別限定而為任意。凸塊B之形成材料,係不特別限定而為任意,例如可使用金、銀、銅、錫及焊錫材料等。The bump B is an electrode formed by being connected to the redistribution layer R, and used for connection with other electronic parts. The shape, size, and type of the bumps B are not particularly limited and are arbitrary. The material for forming the bumps B is not particularly limited and is arbitrary, and for example, gold, silver, copper, tin, and solder materials can be used.

基板5,係如上述般,其熱膨脹係數滿足與支撐體2之熱膨脹係數的預定關係為較佳。又,基板5之厚度,雖係不特別限定,但從抑制層積體1之翹曲的觀點來看,100μm以上1000μm以下為較佳。As described above, the substrate 5 preferably has a thermal expansion coefficient that satisfies a predetermined relationship with the thermal expansion coefficient of the support 2. The thickness of the substrate 5 is not particularly limited, but from the viewpoint of suppressing the warpage of the laminate 1, the thickness is preferably 100 μm or more and 1000 μm or less.

另外,上述的基板5,係一例且亦可為其他形態。例如,基板5,係只要至少具備電子零件E即可,例如亦可不具備再配線層R及凸塊B的至少1個。又,基板5之形狀為任意,亦可不是層狀、板狀。The above-mentioned substrate 5 is an example and may have other forms. For example, the substrate 5 only needs to include at least the electronic component E, and for example, it may not include at least one of the redistribution layer R and the bump B. The shape of the substrate 5 is arbitrary, and it may not be a layer or a plate.

(層積體之翹曲)
層積體1,係每單位長度之翹曲量為10μm/mm以下,較佳為5.0μm/mm以下,更佳為3.0μm/mm以下。另外,「每單位長度之翹曲量」,係指在將未層積支撐體2之分離層3的側之面的預定剖面中之最大高低差設成為D並將預定剖面之長度(兩端之距離)設成為L時,以D/L所表示的量。該最大高低差D,係可藉由雷射位移計等進行測定。如此一來,本實施形態之層積體1,係翹曲被加以抑制。藉此,層積體1,係可抑制位置偏移等,並可提高所製造之電子零件E(電子裝置10)的良率。因此,層積體1,係可適用於後述說明之電子裝置10的製造等。
(Warpage of laminate)
The laminated body 1 has a warpage amount per unit length of 10 μm / mm or less, preferably 5.0 μm / mm or less, and more preferably 3.0 μm / mm or less. In addition, "the amount of warpage per unit length" means that the maximum height difference in a predetermined cross section of the side surface of the side of the separation layer 3 of the unstacked support 2 is set to D and the length of the predetermined cross section (both ends When the distance is set to L, it is expressed by D / L. The maximum height difference D can be measured by a laser displacement meter or the like. In this way, the layered body 1 of this embodiment is suppressed from warping. Thereby, the laminated body 1 can suppress the position shift and the like, and can improve the yield of the manufactured electronic component E (electronic device 10). Therefore, the laminated body 1 is applicable to the production of the electronic device 10 and the like described later.

[層積體之製造方法]
其次,說明本實施形態之層積體之製造方法。本層積體之製造方法,係製造上述之本實施形態之層積體1的方法。圖2及圖3,係表示本實施形態之層積體之製造方法的流程圖。圖4~圖6,係說明本實施形態之層積體之製造方法的圖。另外,在本層積體之製造方法中,針對層積體1的各部(分離層3、接著層4、基板5)之特性等的與上述之本實施形態之層積體1相同的部分,係適宜地省略說明。
[Manufacturing method of laminated body]
Next, a method for manufacturing a laminated body according to this embodiment will be described. The manufacturing method of this laminated body is a method of manufacturing the laminated body 1 of this embodiment mentioned above. FIG. 2 and FIG. 3 are flowcharts showing a method for manufacturing a laminated body according to this embodiment. 4 to 6 are diagrams illustrating a method for manufacturing a laminated body according to this embodiment. In addition, in the method for manufacturing the laminated body, the characteristics of each part of the laminated body 1 (separation layer 3, adhesive layer 4, substrate 5) and the like are the same as those of the laminated body 1 of this embodiment described above. The description is appropriately omitted.

層積體之製造方法,係如圖2(A)的步驟S1所示般,包含有如下述之步驟:經由藉由預定處理而產生變質的分離層3,層積具有由模製材料M所模製之電子零件E的基板5與熱膨脹係數為3ppm/K以上14ppm/K以下的支撐體2。The manufacturing method of the laminated body is as shown in step S1 of FIG. 2 (A), and includes the following steps: through the separation layer 3 that is deteriorated by a predetermined process, the laminated layer is made of a molding material M The substrate 5 of the molded electronic component E and the support 2 having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less.

例如,步驟S1,係如圖2(B)所示的步驟S2所示般,包含有如下述之步驟:依上述之支撐體2、分離層3、接著層4及基板5該順序層積。步驟S2,係例如藉由圖2(B)所示的步驟S3~步驟S5而進行。For example, step S1 is as shown in step S2 shown in FIG. 2 (B), and includes the following steps: layering is performed in this order on the support 2, the separation layer 3, the adhesion layer 4, and the substrate 5. Step S2 is performed, for example, through steps S3 to S5 shown in FIG. 2 (B).

在步驟S3中,係將分離層3層積於支撐體2。在步驟S3中,係首先,準備上述的支撐體2(參閱圖4(A))。此時,如上述般,支撐體2,係在將(支撐體2之熱膨脹係數/基板5之熱膨脹係數)設成為X時,X,係滿足0.5≦X≦1.2為較佳。In step S3, the separation layer 3 is laminated on the support body 2. In step S3, first, the above-mentioned support body 2 is prepared (see FIG. 4 (A)). At this time, as described above, when (the thermal expansion coefficient of the support 2 / the thermal expansion coefficient of the substrate 5) is set to X, it is preferable that X satisfy 0.5 ≦ X ≦ 1.2.

又,支撐體2之熱膨脹係數,係基於使用複數個不同之熱膨脹係數的支撐體2所製造之層積體1的翹曲量來加以設定為較佳。這是因為層積體1之翹曲可依構成層積體1的材料、大小、厚度、製造方法(處理方法)等的複數個要因而變化之緣故。本案發明者發現到,如後述作為參考例所說明般,在層積體1中,當支撐體2以外之構成及製造方法相同的情況下,層積體1之翹曲量,係與支撐體2的熱膨脹率相關。例如,在使用熱膨脹係數為A1之支撐體2所製造的層積體之翹曲量是W1且使用熱膨脹係數為A2之支撐體2所製造的層積體之翹曲量是W2的情況下,上述熱膨脹率(A1、A2)與翹曲量(W1、W2)具有相關關係。藉此,所使用的支撐體2之熱膨脹係數,係可基於上述的相關關係,預測並設定層積體1之翹曲量減少之支撐體2的熱膨脹係數。在該情況下,可確實地抑制層積體1之翹曲。The thermal expansion coefficient of the support 2 is preferably set based on the amount of warpage of the laminated body 1 manufactured by using a plurality of support bodies 2 having different thermal expansion coefficients. This is because the warpage of the laminated body 1 may vary depending on a plurality of materials, size, thickness, manufacturing method (processing method), etc. constituting the laminated body 1. The inventor of the present case found that, as described later as a reference example, in the laminated body 1, when the structure and manufacturing method other than the support body 2 are the same, the warpage amount of the laminated body 1 is the same as that of the support The thermal expansion coefficient of 2 is related. For example, in the case where the warpage amount of the laminate manufactured using the support 2 having a thermal expansion coefficient of A1 is W1 and the warpage amount of the laminate manufactured using the support 2 having a thermal expansion coefficient of A2 is W2, The thermal expansion coefficients (A1, A2) and the warpage amounts (W1, W2) have a correlation. With this, the thermal expansion coefficient of the support 2 used can be predicted and set based on the above-mentioned correlation, the thermal expansion coefficient of the support 2 with a reduced warpage of the laminated body 1. In this case, the warpage of the laminated body 1 can be reliably suppressed.

其次,將分離層3層積於所準備的支撐體2。例如,將形成以溶劑使上述之分離層3的形成材料溶解之分離層3的液體塗佈於支撐體2之一方的面,並使其乾燥且使溶劑蒸發,藉此,如圖4(B)所示般,將分離層3層積於支撐體2上。塗佈之方法,係例如可使用旋轉塗佈、浸漬、輪刀片、噴霧塗佈、狹縫塗佈等的方法。Next, the separation layer 3 is laminated on the prepared support 2. For example, the liquid forming the separation layer 3 in which the above-mentioned formation material of the separation layer 3 is dissolved with a solvent is applied to one surface of the support 2, and the solvent is dried and the solvent is evaporated, as shown in FIG. 4 (B As shown in Figure), the separation layer 3 is laminated on the support 2. The coating method is, for example, a method using spin coating, dipping, wheel blade, spray coating, slit coating, or the like.

接著,在步驟S4中,將接著層4層積於分離層3。例如,將形成以溶劑使上述之接著層4的形成材料溶解之接著層4的液體塗佈於分離層3上,並使其乾燥且使溶劑蒸發,藉此,如圖4(C)所示般,將接著層4層積於分離層3。塗佈之方法,係與步驟S3相同。另外,如上述般,在分離層3兼作為接著層4的情況下,亦可不進行步驟S4。Next, in step S4, the adhesion layer 4 is laminated on the separation layer 3. For example, as shown in FIG. 4 (C), the liquid for forming the adhesive layer 4 in which the formation material of the adhesive layer 4 described above is dissolved with a solvent is applied to the separation layer 3, and the solvent is dried and evaporated. Generally, the adhesion layer 4 is laminated on the separation layer 3. The coating method is the same as that in step S3. In addition, as described above, when the separation layer 3 also serves as the adhesive layer 4, step S4 may not be performed.

接著,在步驟S5中,將具有由模製材料M所模製之電子零件E的基板5層積於接著層4。在本實施形態之層積體之製造方法中,步驟S5,雖係說明在扇出型封裝之製造方法中,對被稱為所謂的晶片優先(RDL優先)之電子零件E形成再配線層R的方法,但亦可為其他態樣。例如,作為將上述基板5層積於接著層4之方法,係亦可使用在形成被稱為所謂的RDL優先之再配線層R後,對再配線層R層積電子零件E的方法,或亦可預先將由模製材料M所模製之複數個電子零件E(模塑晶圓)層積於接著層4,或亦可預先將複數個由模製材料M所模製之各個電子零件E層積於接著層4。Next, in step S5, the substrate 5 having the electronic component E molded by the molding material M is laminated on the adhesion layer 4. In the manufacturing method of the laminated body of this embodiment, step S5 is to explain that in the manufacturing method of the fan-out package, a redistribution layer R is formed on an electronic component E called a so-called wafer priority (RDL priority). Method, but it can also be other aspects. For example, as a method of laminating the substrate 5 on the bonding layer 4, a method of laminating an electronic component E on the redistribution layer R after forming a redistribution layer R called a so-called RDL priority, or A plurality of electronic parts E (molded wafer) molded from the molding material M may be laminated on the bonding layer 4 in advance, or a plurality of each electronic part E molded from the molding material M may be laminated in advance Laminated on the next layer 4.

例如,步驟S5,係藉由圖3所示的步驟S6~步驟S10而進行。例如,在步驟S6中,將電子零件E層積於接著層4。如圖5(A)所示般,在接著層4,係以預定排列,排列有複數個電子零件E。例如,以預定排列,預先將複數個電子零件E排列成接著性之支撐體等,並將其轉印至接著層4,藉此,進行電子零件E對接著層4的層積。另外,將電子零件E層積於接著層4之方法,係不限定於上述的方法而為任意。For example, step S5 is performed through steps S6 to S10 shown in FIG. 3. For example, in step S6, the electronic component E is laminated on the adhesion layer 4. As shown in FIG. 5 (A), a plurality of electronic components E are arranged in a predetermined arrangement on the adhesion layer 4. For example, in a predetermined arrangement, a plurality of electronic components E are arranged in advance as an adhesive support or the like, and transferred to the adhesive layer 4 to thereby laminate the electronic component E to the adhesive layer 4. The method of laminating the electronic component E on the adhesive layer 4 is not limited to the method described above and is arbitrary.

接著,在圖3之步驟S7中,由模製材料M模製電子零件E。例如,藉由塗佈裝置,以覆蓋電子零件E的方式,塗佈以溶劑使上述之模製材料M的形成材料溶解之模製材料,並使其乾燥且使溶劑蒸發,藉此,如圖5(B)所示般,由模製材料M模製電子零件E整體。模製材料M之熱膨脹係數,係4ppm/K以上12ppm/K以下為較佳,且5ppm/K以上10ppm/K以下為更佳。另外,電子零件E對接著層4的層積,係不限定於上述的方法,亦可為其他方法。例如,電子零件E對接著層4的層積,係亦可在以預定排列,排列有複數個電子零件E的狀態下,預先製作由封裝材薄片等的模製材料M所模製之電子零件E的層,並將該層層積於接著層4。Next, in step S7 of FIG. 3, the electronic component E is molded from the molding material M. For example, by applying a coating device to cover the electronic component E, a molding material that dissolves the forming material of the molding material M described above with a solvent is applied, and the solvent is dried and the solvent is evaporated. 5 (B), the entire electronic component E is molded from the molding material M. The thermal expansion coefficient of the molding material M is preferably 4 ppm / K or more and 12 ppm / K or less, and more preferably 5 ppm / K or more and 10 ppm / K or less. In addition, the lamination of the electronic component E to the adhesive layer 4 is not limited to the method described above, and may be other methods. For example, the lamination of the electronic component E to the layer 4 can also be an electronic component molded in advance from a molding material M such as a packaging material sheet in a state where a plurality of electronic components E are arranged in a predetermined arrangement. E, and this layer is laminated on the next layer 4.

接著,在圖3之步驟S8中,使電子零件E之端子T從模製材料M露出。例如,如圖5(C)所示般,對模製材料M之表面(+Z側的面)施予磨削、研磨、切削等的處理,藉此,使電子零件E之端子從模製材料M露出。Next, in step S8 of FIG. 3, the terminal T of the electronic component E is exposed from the molding material M. For example, as shown in FIG. 5 (C), the surface (the surface on the + Z side) of the molding material M is subjected to processing such as grinding, grinding, cutting, etc., whereby the terminals of the electronic component E are removed from the molding. The material M is exposed.

接著,在圖3之步驟S9中,在使電子零件E之端子T露出的模製材料M上形成再配線層R。再配線層R之形成方法,係不特別限定而為任意。例如,在本實施形態中,係首先,藉由相減法、半加成法等,在使電子零件E之端子T露出的模製材料M上形成導電體Rb之層,並在導電體Rb之層上形成預定圖案的光阻,在蝕刻了不需要的導電體Rb後,剝離光阻而形成預定的配線圖案。而且,在配線圖案上形成介電質Ra之保護層,如圖6(A)所示般,在介電質Ra形成再配線層R,該再配線層R,係形成有導電體Rb的配線圖案。另外,再配線層R之形成方法,係不限定於上述的方法而可使用任意方法。Next, in step S9 of FIG. 3, a rewiring layer R is formed on the molding material M which exposes the terminal T of the electronic component E. The method for forming the redistribution layer R is not particularly limited and is arbitrary. For example, in this embodiment, first, a layer of a conductor Rb is formed on the molding material M exposing the terminal T of the electronic component E by a subtraction method, a semi-additive method, or the like, and A photoresist of a predetermined pattern is formed on the layer. After unnecessary conductor Rb is etched, the photoresist is peeled off to form a predetermined wiring pattern. Further, a protective layer of a dielectric Ra is formed on the wiring pattern. As shown in FIG. 6 (A), a redistribution layer R is formed on the dielectric Ra. The redistribution layer R is a wiring on which a conductor Rb is formed. pattern. The method for forming the redistribution layer R is not limited to the method described above, and any method can be used.

接著,在圖3之步驟S10中,在再配線層R形成凸塊B。例如,凸塊B,係去除介電質Ra之層的預定部分,使再配線層R露出,並將凸塊B之材料供給至露出的部分,藉此,如圖6(B)所示般,在再配線層R形成凸塊B。藉由以上之步驟,可製造圖1所示的上述之本實施形態的層積體1。另外,是否形成凸塊B為任意。Next, in step S10 of FIG. 3, a bump B is formed on the redistribution layer R. For example, the bump B is formed by removing a predetermined portion of the dielectric Ra layer, exposing the redistribution layer R, and supplying the material of the bump B to the exposed portion. A bump B is formed on the redistribution layer R. By the above steps, the laminated body 1 of the present embodiment shown in FIG. 1 can be manufactured. Whether or not the bumps B are formed is arbitrary.

[電子裝置之製造方法]
其次,說明本實施形態之電子裝置之製造方法。本電子裝置之製造方法,係使用上述之本實施形態的層積體1來製造電子裝置10的方法。圖7,係表示本實施形態之電子裝置之製造方法的流程圖。圖8及圖9,係說明本實施形態之電子裝置之製造方法的圖。另外,在本說明書中,「電子裝置」,係意味著具備有電子零件E的裝置、元件、零件。
[Manufacturing method of electronic device]
Next, a method for manufacturing an electronic device according to this embodiment will be described. The manufacturing method of the electronic device is a method of manufacturing the electronic device 10 by using the laminated body 1 of the embodiment described above. FIG. 7 is a flowchart showing a method for manufacturing an electronic device according to this embodiment. 8 and 9 are diagrams illustrating a method for manufacturing an electronic device according to this embodiment. In addition, in this specification, "electronic device" means the device, an element, and a component provided with the electronic component E.

電子裝置之製造方法,係包含:藉由上述之層積體之製造方法來製造層積體;使分離層3變質,從層積體1分離支撐體2;及從基板5去除接著層4及分離層3,獲得含有電子零件E的電子裝置10。電子裝置之製造方法,係例如可藉由圖7所示的步驟S11~步驟S15而進行。The manufacturing method of the electronic device includes: manufacturing the laminated body by the above-mentioned manufacturing method of the laminated body; deteriorating the separation layer 3 and separating the support 2 from the laminate 1; and removing the bonding layer 4 from the substrate 5 and The layer 3 is separated to obtain the electronic device 10 containing the electronic component E. The manufacturing method of the electronic device can be performed, for example, through steps S11 to S15 shown in FIG. 7.

例如,在步驟S11中,以支撐構件8支撐上述的基板5。例如,支撐構件8,係可使用支撐具有黏著性之膠帶(薄片)等的基板5且可從基板5拆卸的構件。For example, in step S11, the substrate 5 described above is supported by the support member 8. For example, the support member 8 is a member that can be used to support the substrate 5 and can be detached from the substrate 5 by using an adhesive tape (sheet) or the like.

接著,在步驟S12中,藉由預定處理,使分離層3變質。該預定處理,係基於分離層3之性質而決定。例如,該預定處理,係指在分離層3吸收光而產生變質的情況下,使分離層3吸收光之處理,在分離層3藉由加熱而產生變質的情況下,加熱分離層3之處理,在分離層3藉由化合物而產生變質之處理的情況下,使化合物作用(接觸)於分離層3之處理。其中,在電子裝置之製造方法中,支撐體2,係由光能透過之材料所形成,且分離層3,係由吸收光而產生變質的材料所形成,預定處理,係通過支撐體2且照射光的方式,使分離層3吸收光之處理為較佳。在該情況下,可藉由簡單的處理使分離層3特異性地變質。例如,如圖8(B)所示般,藉由產生使分離層3變質之波長的光之雷射等,通過支撐體2,對分離層3照射光。分離層3,係變質成受到些許外力而被破壞之狀態為較佳。另外,在圖8(B)中,符號「3a」,係表示已變質之狀態。Next, in step S12, the separation layer 3 is modified by a predetermined process. This predetermined process is determined based on the properties of the separation layer 3. For example, the predetermined treatment refers to a process of causing the separation layer 3 to absorb light when the separation layer 3 absorbs light and causing deterioration, and a process of heating the separation layer 3 if the separation layer 3 is deteriorated by heating. In the case where the separation layer 3 undergoes a degradation treatment by the compound, the compound is allowed to act (contact) on the separation layer 3. Among them, in the manufacturing method of the electronic device, the support 2 is formed of a material through which light energy is transmitted, and the separation layer 3 is formed of a material that deteriorates due to absorption of light. The predetermined treatment is performed by the support 2 and The method of irradiating light is preferably a treatment in which the separation layer 3 absorbs light. In this case, the separation layer 3 can be specifically deteriorated by a simple process. For example, as shown in FIG. 8 (B), the separation layer 3 is irradiated with light through the support 2 by generating a laser or the like with a wavelength of light that deteriorates the separation layer 3. The separation layer 3 is preferably in a state of being deteriorated to be damaged by a little external force. In addition, in FIG. 8 (B), the symbol "3a" indicates a state of deterioration.

接著,在步驟S13中,從層積體1分離支撐體2。在本實施形態中,分離層3,係變質成受到些許外力而被破壞之狀態,例如,如圖8(C)所示般,使支撐體2相對於分離層3移動,藉此,分離層3被破壞,可使基板5從支撐體2輕易分離。Next, in step S13, the support body 2 is separated from the laminated body 1. In this embodiment, the separation layer 3 is degraded to a state where it is damaged by some external force. For example, as shown in FIG. 8 (C), the support body 2 is moved relative to the separation layer 3, thereby the separation layer 3 3 is broken, and the substrate 5 can be easily separated from the support 2.

接著,在步驟S14中,從基板5去除分離層3及接著層4。在本實施形態中,如上述般,分離層3及接著層4,係被設定為藉由預定溶劑進行溶解,如圖9(A)所示般,藉由預定溶劑進行處理,藉此,從基板5去除分離層3及接著層4。在去除分離層3及接著層4後,洗淨溶劑並使其乾燥。Next, in step S14, the separation layer 3 and the adhesion layer 4 are removed from the substrate 5. In this embodiment, as described above, the separation layer 3 and the bonding layer 4 are set to be dissolved by a predetermined solvent, as shown in FIG. 9 (A), and processed by the predetermined solvent, thereby, from The substrate 5 removes the separation layer 3 and the adhesion layer 4. After the separation layer 3 and the adhesion layer 4 are removed, the solvent is washed and dried.

接著,在步驟S15中,對基板5進行切割。例如,在步驟S15中,如圖9(B)所示般,以預定單位對基板5進行切割。切割之方法,係不特別限定而為任意。例如,該切割,係可藉由刃切割、雷射切割等來進行。藉此,製造已對層積體1之基板5進行單片化的電子裝置10。由於在本實施形態中,係使用抑制了翹曲的層積體1,因此,可提高所製造之電子零件的良率。Next, in step S15, the substrate 5 is cut. For example, in step S15, as shown in FIG. 9 (B), the substrate 5 is cut in a predetermined unit. The method of cutting is not particularly limited and is arbitrary. For example, this cutting can be performed by blade cutting, laser cutting, or the like. Thereby, the electronic device 10 in which the substrate 5 of the laminated body 1 is singulated is manufactured. Since the laminated body 1 in which the warpage is suppressed is used in this embodiment, the yield of the manufactured electronic component can be improved.

如以上所說明般,本實施形態之層積體之製造方法,係可製造抑制了翹曲的層積體。又,本發明之層積體,係翹曲得到抑制。又,由於本實施形態之電子裝置之製造方法,係使用抑制了翹曲的層積體,因此,可提高所製造之電子零件的良率。

[實施例]
As described above, the method for producing a laminated body according to this embodiment is capable of producing a laminated body in which warpage is suppressed. Moreover, in the laminated body of the present invention, warping is suppressed. In addition, since the method for manufacturing an electronic device according to this embodiment uses a laminated body in which warpage is suppressed, the yield of the manufactured electronic component can be improved.

[Example]

以下,雖藉由實施例更詳細地說明本發明,但本發明並不受該些例子的任何限定。Hereinafter, the present invention will be described in more detail through examples, but the present invention is not limited to these examples.

[實施例1~6]
在實施例1~6中,係使用熱膨脹係數不同之複數個支撐體,製造圖1所示的層積體1,並評估層積體1之翹曲。
[Examples 1 to 6]
In Examples 1 to 6, a multilayer body 1 shown in FIG. 1 was manufactured using a plurality of supports having different thermal expansion coefficients, and the warpage of the multilayer body 1 was evaluated.

(層積體之製造)
實施例1~6之層積體1,係如下述般,使用上述之本實施形態之層積體之製造方法來製造。各實施例之層積體,係使用以下的材料來製造。在各實施例中,支撐體2,係設成為直徑為200mm、厚度為700μm、熱膨脹係數為3.2~10.5ppm/K(圖10所示)、圓板狀的玻璃。分離層3,係將形成材料設成為氟碳化物系分離層,將厚度設成為0.4μm。接著層4,係使用TOKYO OHKA KOGYO股份有限公司、TZNR(註冊商標)-A4017(模數0.27MPa),以厚度30μm來形成。基板5,係複數個電子零件E由模製材料M所模製者。在各實施例中,基板5之厚度,係設成為300μm及490μm。另外,在實施例1~6中,基板5之熱膨脹係數,係8~10ppm/K的範圍。分離層3及接著層4,係在藉由塗佈裝置塗佈了使材料溶解的材料液後,藉由加熱來形成。又,基板5與接著層4之層積,係藉由下述來進行:將具有由模製材料M進行模製之複數個電子零件E(模塑晶圓)的基板5層積於層積體1。
(Manufacturing of laminated body)
The laminated body 1 of Examples 1 to 6 was manufactured by using the above-described method of manufacturing the laminated body of the present embodiment as described below. The laminated body of each Example was manufactured using the following materials. In each embodiment, the support 2 is a disc-shaped glass having a diameter of 200 mm, a thickness of 700 μm, a thermal expansion coefficient of 3.2 to 10.5 ppm / K (shown in FIG. 10). The separation layer 3 is a fluorocarbon-based separation layer with a forming material and a thickness of 0.4 μm. The next layer 4 was formed using TOKYO OHKA KOGYO Co., Ltd., TZNR (registered trademark) -A4017 (modulus 0.27 MPa) and a thickness of 30 μm. The substrate 5 is one in which a plurality of electronic components E are molded from a molding material M. In each embodiment, the thickness of the substrate 5 is set to 300 μm and 490 μm. In addition, in Examples 1 to 6, the thermal expansion coefficient of the substrate 5 is in a range of 8 to 10 ppm / K. The separation layer 3 and the adhesion layer 4 are formed by applying a material solution in which a material is dissolved by a coating device, and then heating the layer. The lamination of the substrate 5 and the adhesive layer 4 is performed by laminating a substrate 5 having a plurality of electronic components E (molded wafers) molded from a molding material M in a lamination. Body 1.

(翹曲之測定)
將所製造之層積體1載置於平台上,藉由雷射位移計,測定層積體1的預定剖面中之最大高低差D。另外,預定之剖面圖,係設成為圓板狀之層積體1的直徑方向。在圖10中,表示各實施例中之層積體1的翹曲。另外,在圖10中,層積體1之翹曲的「+」符號,係表示圖1所示之層積體1朝向上方突出之方向的翹曲(向上翹曲),層積體1之翹曲的「-」符號,係表示圖1所示之層積體1朝向下方突出之方向的翹曲(向下翹曲)。
(Measurement of warpage)
The manufactured laminated body 1 was placed on a platform, and the maximum height difference D in a predetermined section of the laminated body 1 was measured by a laser displacement meter. The predetermined cross-sectional view is a radial direction of the disk-shaped laminated body 1. FIG. 10 shows the warpage of the laminated body 1 in each example. In addition, in FIG. 10, the warped “+” symbol of the laminated body 1 indicates the warpage (upward warping) of the laminated body 1 shown in FIG. 1 in a direction in which it protrudes upward. The warped "-" symbol indicates warpage (downward warpage) in a direction in which the laminated body 1 shown in FIG. 1 protrudes downward.

另外,層積於接著層4之前的狀態之基板5的翹曲亦由雷射位移計來計測。其結果,厚度為300μm之基板5,係沿著中央朝向下方突出的方向(-方向),最大高低差為2022μm(每單位長度之翹曲量10.1μm/mm),厚度為490μm之基板,係沿著中央朝向上方突出的方向(+方向),最大高低差為3429μm(每單位長度之翹曲量17.1μm/mm)。In addition, the warpage of the substrate 5 laminated in a state before the layer 4 was also measured by a laser displacement meter. As a result, the substrate 5 having a thickness of 300 μm is a direction (-direction) protruding downward along the center, and the maximum height difference is 2022 μm (a warpage amount per unit length of 10.1 μm / mm). The direction (+ direction) protruding upward along the center, the maximum height difference was 3429 μm (the warpage amount per unit length was 17.1 μm / mm).

又,在實施例1~6中,藉由下述式,求出層積體1之每單位長度的翹曲量。
式:「層積體1之每單位長度的翹曲量」=「層積體1之翹曲量的絕對值(μm)」/支撐體之直徑(200mm)
將其結果表示於下述。又,亦表示翹曲之方向。
實施例1:
300μm厚之基板:1544μm/200mm=7.720μm/mm(+方向)
490μm厚之基板:1989μm/200mm=9.945μm/mm(+方向)
實施例2:
300μm厚之基板:1665μm/200mm=8.325μm/mm(+方向)
490μm厚之基板:1602μm/200mm=8.010μm/mm(+方向)
實施例3:
300μm厚之基板:972μm/200mm=4.86μm/mm(+方向)
490μm厚之基板:1063μm/200mm=5.315μm/mm(+方向)
實施例4:
300μm厚之基板:660μm/200mm=3.3μm/mm(+方向)
490μm厚之基板:658μm/200mm=3.29μm/mm(+方向)
實施例5:
300μm厚之基板:810μm/200mm=4.05μm/mm(-方向)
490μm厚之基板:222μm/200mm=1.11μm/mm(-方向)
實施例6:
300μm厚之基板:2012μm/200mm=10.06μm/mm(-方向)
490μm厚之基板:1842μm/200mm=9.21μm/mm(-方向)
In Examples 1 to 6, the amount of warpage per unit length of the laminated body 1 was determined by the following formula.
Formula: "Amount of warpage per unit length of laminated body 1" = "Absolute value of warpage of laminated body 1 (μm)" / diameter of support (200mm)
The results are shown below. It also indicates the direction of warping.
Example 1:
300μm thick substrate: 1544μm / 200mm = 7.720μm / mm (+ direction)
490μm thick substrate: 1989μm / 200mm = 9.945μm / mm (+ direction)
Example 2:
300μm thick substrate: 1665μm / 200mm = 8.325μm / mm (+ direction)
490μm thick substrate: 1602μm / 200mm = 8.010μm / mm (+ direction)
Example 3:
300μm thick substrate: 972μm / 200mm = 4.86μm / mm (+ direction)
490μm thick substrate: 1063μm / 200mm = 5.315μm / mm (+ direction)
Example 4:
300μm thick substrate: 660μm / 200mm = 3.3μm / mm (+ direction)
490μm thick substrate: 658μm / 200mm = 3.29μm / mm (+ direction)
Example 5:
300μm thick substrate: 810μm / 200mm = 4.05μm / mm (-direction)
490μm thick substrate: 222μm / 200mm = 1.11μm / mm (-direction)
Example 6:
300μm thick substrate: 2012μm / 200mm = 10.06μm / mm (-direction)
490μm thick substrate: 1842μm / 200mm = 9.21μm / mm (-direction)

(結果)
確認到:本實施形態之層積體1,係如圖10所示般,翹曲得到抑制。又,從實施例1~6之結果確認到:層積體1之翹曲,係依存於支撐體2之熱膨脹係數,且翹曲之方向會連續變化。又,確認到:在實施例1~6所進行之使用複數個不同之熱膨脹係數的支撐體2所製造之層積體1的翹曲量,係與支撐體2之熱膨脹係數具有相關性,層積體1之翹曲量,係被預測為支撐體2的熱膨脹係數為6.5左右且接近0。
(result)
It was confirmed that, as shown in FIG. 10, the laminated body 1 of the present embodiment has suppressed warpage. In addition, from the results of Examples 1 to 6, it was confirmed that the warpage of the laminated body 1 depends on the thermal expansion coefficient of the support 2 and the direction of the warp continuously changes. In addition, it was confirmed that the warpage amount of the laminated body 1 manufactured in the examples 1 to 6 using a plurality of support bodies 2 having different thermal expansion coefficients is related to the thermal expansion coefficient of the support body 2, and the layer The warpage of the product 1 is predicted to be about 6.5 and close to 0 for the thermal expansion coefficient of the support 2.

另外,本發明之技術範圍,係不限定於在上述的實施形態等所說明之態樣者。在上述的實施形態等所說明之要件的1個以上,係有時被省略。又,在上述的實施形態等所說明之要件,係可適宜地組合。又,在法令所容許的範圍內,援用上述之實施形態等所引用的所有文獻之揭示作為本文之記載的一部分。In addition, the technical scope of the present invention is not limited to those described in the embodiments and the like described above. One or more of the requirements described in the above-mentioned embodiment and the like may be omitted. In addition, the elements described in the above embodiments and the like can be appropriately combined. In addition, to the extent permitted by laws and regulations, the disclosure of all documents cited in the above-mentioned embodiments and the like is used as a part of the description in this document.

1‧‧‧層積體1‧‧‧ layered body

2‧‧‧支撐體 2‧‧‧ support

3‧‧‧分離層 3‧‧‧ separation layer

4‧‧‧接著層 4‧‧‧ Adjacent layer

5‧‧‧基板 5‧‧‧ substrate

8‧‧‧支撐構件 8‧‧‧ support member

10‧‧‧電子裝置 10‧‧‧ electronic device

B‧‧‧凸塊 B‧‧‧ bump

E‧‧‧電子零件 E‧‧‧Electronic parts

M‧‧‧模製材料 M‧‧‧Molding material

R‧‧‧再配線層 R‧‧‧ redistribution layer

Ra‧‧‧介電質 Ra‧‧‧ Dielectric

Rb‧‧‧導電體 Rb‧‧‧Conductor

T‧‧‧端子 T‧‧‧terminal

[圖1]表示實施形態之層積體的圖。[Fig. 1] A view showing a laminated body according to an embodiment.

[圖2](A)及(B),係表示實施形態之層積體之製造方法的流程圖。 [Fig. 2] (A) and (B) are flowcharts showing a method for manufacturing a laminated body according to an embodiment.

[圖3]接續於圖2,表示層積體之製造方法的流程圖。 [Fig. 3] Continued from Fig. 2 and shows a flowchart of a method for manufacturing a laminated body.

[圖4](A)~(C),係層積體之製造方法的說明圖。 [Fig. 4] (A) to (C) are explanatory diagrams of a method for manufacturing a laminated body.

[圖5]接續於圖4,(A)~(C),係層積體之製造方法的說明圖。 [Fig. 5] Continued from Fig. 4, (A) to (C) are explanatory diagrams of a method for manufacturing a laminated body.

[圖6]接續於圖5,(A)及(B),係層積體之製造方法的說明圖。 [Fig. 6] Continued from Fig. 5, (A) and (B) are explanatory diagrams of a method for manufacturing a laminated body.

[圖7]表示實施形態之電子裝置之製造方法的流程圖。 FIG. 7 is a flowchart showing a method of manufacturing an electronic device according to an embodiment.

[圖8](A)及(B),係電子裝置之製造方法的說明圖。 [FIG. 8] (A) and (B) are explanatory drawings of the manufacturing method of an electronic device.

[圖9]接續於圖8,(A)及(B),係電子裝置之製造方法的說明圖。 [Fig. 9] Figs. 9 (A) and (B) are diagrams for explaining a method for manufacturing an electronic device, continued from Fig. 8. [Fig.

[圖10]表示實施例1~6之層積體之翹曲量的曲線圖。 Fig. 10 is a graph showing the amount of warpage of the laminates of Examples 1 to 6.

Claims (11)

一種層積體之製造方法,其特徵係,包含有如下述之步驟: 經由藉由預定處理而產生變質的分離層,層積具有由模製材料所模製之電子零件的基板與熱膨脹係數為3ppm/K以上14ppm/K以下的支撐體。A method for manufacturing a laminated body, which is characterized by including the following steps: A substrate having electronic parts molded from a molding material and a support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less are laminated through a separation layer that is deteriorated by a predetermined process. 如申請專利範圍第1項之層積體之製造方法,其中,包含有如下述之步驟: 依前述支撐體、前述分離層、接著層及前述基板該順序層積。For example, the method for manufacturing a laminated body according to item 1 of the patent application scope includes the following steps: The support, the separation layer, the adhesion layer, and the substrate are laminated in this order. 如申請專利範圍第2項之層積體之製造方法,其中, 前述接著層,係藉由熱可塑性之材料所構成。For example, the manufacturing method of the laminated body in the scope of patent application item 2, wherein, The adhesive layer is made of a thermoplastic material. 如申請專利範圍第2或3項之層積體之製造方法,其中, 前述接著層,係模數為0.05MPa以上5.00MPa以下。For example, the manufacturing method of the laminated body in the scope of the patent application No. 2 or 3, wherein, The adhesion layer has a modulus of 0.05 MPa to 5.00 MPa. 如申請專利範圍第1~4項中任一項之層積體之製造方法,其中, 前述支撐體之熱膨脹係數與前述基板之熱膨脹係數的關係滿足0.5≦(支撐體之熱膨脹係數/基板之熱膨脹係數)≦1.2的關係。For example, a method for manufacturing a laminated body according to any one of claims 1 to 4, in which: The relationship between the thermal expansion coefficient of the support and the thermal expansion coefficient of the substrate satisfies a relationship of 0.5 ≦ (the thermal expansion coefficient of the support / the thermal expansion coefficient of the substrate) ≦ 1.2. 如申請專利範圍第1~5項中任一項之層積體之製造方法,其中, 前述基板之厚度,係100μm以上1000μm以下, 前述支撐體之厚度,係400μm以上1200μm以下,且比前述基板的厚度更厚。For example, a method for manufacturing a laminated body according to any one of claims 1 to 5, in which: The thickness of the substrate is 100 μm to 1000 μm. The thickness of the support is 400 μm or more and 1200 μm or less, and is thicker than the thickness of the substrate. 如申請專利範圍第1~6項中任一項之層積體之製造方法,其中, 前述支撐體,係由光能透過之材料所形成, 前述分離層,係藉由光之吸收而產生變質。For example, a method for manufacturing a laminated body according to any one of claims 1 to 6, in which: The aforementioned support body is formed of a material through which light energy is transmitted, The separation layer is deteriorated by absorption of light. 如申請專利範圍第1~7項中任一項之層積體之製造方法,其中, 前述支撐體,係玻璃。For example, a method for manufacturing a laminated body according to any one of claims 1 to 7, in which: The support is glass. 如申請專利範圍第1~8項中任一項之層積體之製造方法,其中, 前述基板,係具備有:前述電子零件;及再配線層,與前述電子零件連接, 且包含有如下述之步驟: 由模製材料模製前述電子零件;及 形成前述再配線層。For example, a method for manufacturing a laminated body according to any one of claims 1 to 8, in which: The substrate includes: the electronic component; and a redistribution layer connected to the electronic component. It includes the following steps: Molding the aforementioned electronic parts from a molding material; and The aforementioned redistribution layer is formed. 一種層積體,其特徵係, 依熱膨脹係數為3ppm/K以上14ppm/K以下的支撐體與藉由預定處理而產生變質的分離層與接著層與基板該順序層積而成。A layered body with characteristics, It is formed by laminating a support body having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less and a separation layer, an adhesive layer, and a substrate that are deteriorated by a predetermined process in this order. 一種電子裝置之製造方法,其特徵係,包含有如下述之步驟: 藉由如申請專利範圍第1~9項中任一項之層積體之製造方法來製造層積體; 使前述分離層變質,從前述層積體分離前述支撐體;及 從前述基板去除前述接著層及前述分離層,獲得含有前述電子零件的電子裝置。A method for manufacturing an electronic device is characterized in that it includes the following steps: Manufacturing the laminated body by the manufacturing method of the laminated body according to any one of claims 1 to 9; Deteriorating the separation layer and separating the support body from the laminate body; and The bonding layer and the separation layer are removed from the substrate to obtain an electronic device including the electronic component.
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