JP2019121733A - Method of manufacturing laminate, laminate, and method of manufacturing electronic device - Google Patents

Abstract

To suppress warpage of a laminate having an electronic component.SOLUTION: The method of manufacturing a laminate includes laminating a substrate 5 having an electronic component E molded with a molding material M and a support 2 having a thermal expansion coefficient of 3 ppm/K or more and 14 ppm/K or less via a separation layer 3 which is denatured by a predetermined treatment.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a method of manufacturing a laminate, a laminate, and a method of manufacturing an electronic device.

  In the semiconductor field, in recent years, packages for embedding electronic components at wafer level and panel level have been used. For example, a fan-out type package is a package having a structure in which rewirings formed on a semiconductor chip (chip) are extended to the outside of the outer shape of the chip, and the package is miniaturized or the wiring density is high. Has attracted attention because it can be realized. As a method of manufacturing a semiconductor by such a fan-out type package, a plurality of electronic components are mounted on a support and sealed with a molding material to form a wiring structure (rewiring), and then the support is removed from the laminate And a method of solidifying is known (for example, Patent Document 1 below).

JP 2008-306071 A

  Conventionally, in a laminate including an electronic component as described in Patent Document 1, warpage may occur. If warpage occurs in the laminate, positional deviation or the like occurs, and defects tend to occur in the electronic component, and the yield decreases. In particular, when the package is miniaturized and the wiring density is increased, defects in electronic components are likely to occur. Then, as a result of examining the material etc. of each part in the above laminates, the inventor of the present application found out that the warpage of the laminates can be suppressed by using a support having a predetermined thermal expansion coefficient. The present invention has been completed.

  In view of the circumstances as described above, the present invention aims to suppress warpage of a laminate having an electronic component.

  According to the first aspect of the present invention, separation is performed in which the substrate having the electronic component molded with the mold material and the support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less by a predetermined treatment A method of making a laminate is provided, including laminating through layers.

  According to the second aspect of the present invention, a support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less, a separation layer which is denatured by a predetermined treatment, an adhesive layer, and a substrate are arranged in this order. A laminated laminate is provided.

  According to the third aspect of the present invention, there is provided a method of producing a laminate by the method for producing a laminate, degenerating the separation layer to separate the support from the laminate, an adhesive layer from the substrate, and A method of manufacturing an electronic device is provided, including removing the separation layer to obtain an electronic device including an electronic component.

  The method for producing a laminate of the present invention can produce a laminate in which warpage is suppressed. Further, in the laminate of the present invention, warpage is suppressed. In addition, since the method for manufacturing an electronic device according to the present invention uses a laminate in which warpage is suppressed, the yield of the electronic component to be manufactured can be increased.

It is a figure showing the layered product concerning an embodiment. (A) and (B) is a flowchart which shows the manufacturing method of the laminated body which concerns on embodiment. It is a flowchart which shows the manufacturing method of a laminated body following FIG. (A) to (C) are explanatory drawings of the manufacturing method of a laminated body. (A) to (C) are explanatory drawings of the manufacturing method of a laminated body following FIG. (A) and (B) are explanatory drawings of the manufacturing method of a laminated body following FIG. It is a flowchart which shows the manufacturing method of the electronic device which concerns on embodiment. (A) and (B) is explanatory drawing of the manufacturing method of an electronic device. (A) and (B) are explanatory drawings of the manufacturing method of an electronic device following FIG. It is a graph which shows the curvature amount of the laminated body of Examples 1-6.

[Embodiment]
Embodiments will be described. In the following description, an XYZ orthogonal coordinate system shown in FIG. 1 and the like will be referred to as appropriate. In this XYZ orthogonal coordinate system, the X direction and the Y direction are horizontal directions (horizontal directions), and the Z direction is a vertical direction. In each direction, the same side as the tip of the arrow is appropriately referred to as the + side (eg, + Z side), and the side opposite to the tip of the arrow as the − side (eg, -Z side). For example, in the vertical direction (Z direction), the upper side is the + Z side, and the lower side is the -Z side. In the drawings, in order to describe the embodiment, a part or the whole is schematically described, and a part is described by appropriately changing the scale, for example, by partially or partially emphasizing.

[Laminate]
The laminate of the present embodiment will be described. FIG. 1: is sectional drawing seen from the -Y side which shows the laminated body which concerns on this embodiment. The laminated body 1 is provided with the board | substrate 5 which has the support body 2, the isolation | separation layer 3, the contact bonding layer 4, and the electronic component E, as shown in FIG. In the laminate 1, the support 2, the separation layer 3, the adhesive layer 4, and the substrate 5 having the electronic component E are laminated in this order. The laminate 1 is used to manufacture an electronic device 10 (see FIG. 9B) including the electronic component E. The laminate 1 includes a so-called fan-out type package structure in which the redistribution layer R formed on the electronic component E is formed so as to be extended outside the outer shape of the electronic component E. Note that, in the present embodiment, the laminate 1 is described as including the structure of a so-called fan-out type panel level package, but other aspects may be possible.

(Support)
The support 2 supports the separation layer 3, the adhesive layer 4 and the substrate 5. The separation layer 3 is laminated on one surface of the support 2 (the surface on the + Z side in FIG. 1). The size, thickness and shape of the support 2 can be set arbitrarily. For example, the support 2 can have an outer size such as one side or a diameter of about 10 mm or more and 1000 mm or less. Also, for example, the thickness of the support 2 is preferably 400 μm or more and 1200 μm or less from the viewpoint of suppressing the warpage of the laminate 1. Further, from the viewpoint of suppressing the warpage of the laminate 1, the thickness of the support 2 is preferably thicker than the thickness of the substrate 5 described later. Also, for example, the shape of the support 2 can be a plate such as a rectangular shape, a circular shape, or the like as the outer shape thereof.

The support 2 has a coefficient of thermal expansion (CTE) of 3 ppm / K or more and 14 ppm / K or less, preferably 4 ppm / K or more and 9 ppm / K or less, and 5 ppm / K or more and 8 ppm / K It is more preferable that When the thermal expansion coefficient of the support 2 is in the above range, the warpage of the laminate 1 can be suppressed. It is considered that this is because when the thermal expansion coefficient of the support 2 is in the above range, the thermal expansion coefficient of the substrate 5 is matched. Above all, when the thermal expansion coefficient of the support 2 and the thermal expansion coefficient of the substrate 5 are represented by (the thermal expansion coefficient of the support 2 / the thermal expansion coefficient of the substrate 5), X is 0.5 ≦ X. It is preferable to satisfy ≦ 1.2, and it is more preferable to satisfy 0.8 ≦ X ≦ 1.0. The thermal expansion coefficient of the substrate 5 is preferably 4 ppm / K or more and 12 ppm / K or less, and more preferably 5 ppm / K or more and 10 ppm / K or less. In addition, the thermal expansion coefficient of the support body 2 and the board | substrate 5 can each be calculated | required by a well-known thermal expansion coefficient measuring apparatus etc.
In the present invention, the expansion and contraction behavior of the molding material M provided on the support 2 may be dominant with respect to the warpage of the laminate 1. In that case, the thermal expansion coefficient of the substrate 5 can be considered to be equal to the thermal expansion coefficient of the molding material M.
From such a viewpoint, the thermal expansion coefficient of the molding material M is preferably 4 ppm / K or more and 12 ppm / K or less, and more preferably 5 ppm / K or more and 10 ppm / K or less.
The thermal expansion coefficient of the molding material M can be obtained separately by curing a composition used for sealing to obtain a test piece, and the test piece can be determined by analysis using a thermal expansion coefficient measuring apparatus.

  The material for forming the support 2 is not particularly limited and is optional, but when the separation layer 3 described later is degraded by light, it is formed of a material that transmits light of a wavelength that degrades the separation layer 3. preferable. In this case, since the light for changing the separation layer 3 can be irradiated to the separation layer 3 through the support 2, the process (see FIG. 8B) for changing the separation layer 3 can be easily performed.

  The forming material of the support 2 as described above is, for example, glass, ceramics, single crystal material, or the like. Among them, the material for forming the support 2 is preferably glass in terms of the cost of the material, the availability of the material, and the like. In addition, when the formation material of the support body 2 is glass, the composition of glass is not specifically limited and is arbitrary. As such glass, known ones can be used.

(Separated layer)
The separation layer 3 is formed on the support 2. The separation layer 3 is formed in the laminate 1 between the support 2 and the adhesive layer 4 (substrate 5). The separation layer 3 is denatured by a predetermined process. Thereby, the laminate 1 can separate the support 2 and the substrate 5 by degenerating the separation layer 3. For example, the separation layer 3 may be made of a material (material) that is degraded by the action of a compound that absorbs (or decomposes, dissolves) the light, for example, absorbing or heating light. When the separation layer 3 is degraded by absorption of light, a process of specifically degrading the separation layer 3 can be easily performed.

  In the present specification, “alteration” of the separation layer 3 means that the adhesion between the separation layer 3 and the layer in contact with the separation layer 3 is changed to a reduced state. The separation layer 3 is preferably transformed into a state in which the separation layer 3 is destroyed by a slight external force. The separation layer 3 loses its strength or adhesiveness before being altered as a result of the alteration. For example, the separation layer 3 becomes brittle due to the alteration. Degeneration of the separation layer 3 occurs as a result of the above-described predetermined processing and can be controlled. In the present embodiment, the separation layer 3 is set so as to deteriorate the separation layer 3 to such an extent that the separation layer 3 is broken by moving the support 2 relative to the separation layer 3 by a predetermined treatment. Thereby, the laminate 1 can easily separate the substrate 5 from the support 2.

  The forming material of the separation layer 3 is not particularly limited and is optional. When the material for forming the separation layer 3 is a material that is denatured by absorption of light, the repeating unit includes a fluorocarbon which is a material described in WO 2013/008540, and a structure having light absorbability in its repeating unit. It is possible to use a polymer, an inorganic substance, a compound having an infrared absorbing structure, or the like. When the forming material of the separation layer 3 is the above-mentioned material, it is denatured by absorbing light, loses strength or adhesiveness before absorbing light, and applies a slight external force (for example, separates the support 2) It can be destroyed by moving it with respect to the layer 3 and the like, and the support 2 and the substrate 5 can be easily separated. In addition, when the forming material of the separation layer 3 is a material that changes in quality by absorption of light, it is preferable that the absorptivity of light is 80% or more. In addition, when the separation layer 3 is a material that changes in quality due to the absorption of light, the wavelength of the light that causes the change is arbitrary. When the separation layer 3 is a material that changes in quality due to the absorption of light, the separation layer 3 changes in quality by absorbing light emitted from a laser, for example.

  In addition, when the material of the separation layer 3 is a material that changes in quality by heating, for example, a known thermally decomposable resin that changes in quality at a predetermined temperature can be used. In this case, the predetermined temperature at which the separation layer 3 is altered can be appropriately set by the method of manufacturing the laminate 1 and can be adjusted by the material of the thermally degradable resin.

  Further, the separation layer 3 is preferably a material which is dissolved by a predetermined solvent so as to be easily removed from the substrate 5. The solvent for dissolving the separation layer 3 is not particularly limited and is optional. For example, in the case where the separation layer 3 is a material that is denatured by absorbing the light described above, primary, secondary, tertiary A solvent containing an amine compound such as aliphatic amine, alicyclic amine, aromatic amine, heterocyclic amine and the like can be used.

  The thickness of the separation layer 3 is not particularly limited, but is preferably in the range of, for example, 0.05 μm or more and 50 μm or less. When the thickness of the separation layer 3 is in the above range, the separation layer 3 can be more reliably degraded by simple processing (eg, irradiation of light for a short time, irradiation of light with low energy, etc.).

(Adhesive layer)
The adhesive layer 4 is formed on the separation layer 3. The adhesive layer 4 is formed between the separation layer 3 and the substrate 5 in the laminate 1. The adhesive layer 4 is used to adhere the separation layer 3 to the substrate 5.

  The adhesive layer 4 is preferably made of a thermoplastic material. When the adhesive layer 4 is made of a thermoplastic material, it can be cured by being dissolved by heat and cooled, so that handling and control during manufacture are easy. The adhesive layer 4 preferably has a modulus (tensile stress) of 0.05 MPa or more and 5.00 MPa or less, and more preferably 0.1 MPa or more and 3.00 MPa or less. When the modulus of the adhesive layer 4 is in the above range, deformation of the laminate 1 by the adhesive layer 4 can be suppressed.

  The forming material of the adhesive layer 4 is not particularly limited and is optional. For example, the material for forming the adhesive layer 4 is a resin having adhesiveness, and among them, a hydrocarbon resin, an acryl-styrene resin, a maleimide resin, an elastomer resin, a polysal resin, or a combination thereof. Preferably there. The adhesive layer 4 is preferably a material that dissolves in a predetermined solvent so as to be easily removed from the substrate 5. The solvent which dissolves the adhesive layer 4 is not particularly limited and is optional, but, for example, linear hydrocarbons such as hexane, heptane, octane, nonane, isononane, methyl octane, decane, undecane, dodecane, tridecane etc., carbon 4 to 15 branched hydrocarbons, for example, tubular hydrocarbons such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, p-menthane, o-menthane, m-menthane, diphenylmenthane And so on. Such an adhesive layer 4 can be formed, for example, using TZNR (registered trademark) -A4017, A3007 or the like manufactured by Tokyo Ohka Kogyo Co., Ltd.

  The thickness of the adhesive layer 4 is not particularly limited, but is preferably 10 μm or more and 150 μm or less, for example, from the viewpoint of adhesiveness and ease of removal of the adhesive layer 4.

  The adhesive layer 4 may have the property of being altered by a predetermined process which is the property of the separation layer 3 described above. That is, the separation layer 3 may double as the adhesive layer 4. In this case, the laminate 1 may not include the adhesive layer 4. The material for forming such a separation layer 3 is, for example, a material in which a resin having adhesiveness is compounded with a material that absorbs light, and for example, a material in which carbon black or the like is compounded into an acrylic UV curable resin It is a material in which an infrared ray absorbing material or the like of glass bubbles is blended in a tacky resin.

(substrate)
The substrate 5 is formed on the adhesive layer 4. The substrate 5 has a plurality of electronic components E molded (sealed) with a molding material M, a redistribution layer R (RDL (Redistribution Layer)), and bumps B. The substrate 5 of the present embodiment is a sealing substrate having a fan-out type package structure. The substrate 5 is cut into pieces (dicing) to form a plurality of electronic devices 10 (see FIG. 9B).
Here, the adhesive layer 4 is a member which is intermittently formed by a combination of the molding material M and the electronic component provided in the substrate 5 and is mostly covered.

  Each electronic component E is molded with a molding material M. The molding material M is molded to cover the electronic component E. The molding material M molds the surface (the surface on the + Z side) and the side surface (the surface on the ± X side and the surface on the ± Y side) opposite to the adhesive layer 4 in each electronic component E. The thickness of the molding material M is not particularly limited and is arbitrary. The forming material of the molding material M is not particularly limited and is optional. The forming material of the molding material M is, for example, an epoxy resin, a silicon resin, or the like. Further, the electronic component E is not particularly limited and is optional. For example, the electronic component E is a semiconductor chip, a micro electro mechanical system (MEMS), a transistor, a capacitor, a resistor, or the like. The plurality of electronic components E may be of the same type or may be different. The electronic components E molded with such a molding material M may be, for example, a plurality of electronic components E (mold wafers) molded with the molding material M, or even individual electronic components E molded with the molding material M Good. The electronic component E molded with the molding material M may be a single layer or a multilayer.

  The rewiring layer R is a thin film wiring body constituting a wiring connected to the terminal T or the like of the electronic component E. In the rewiring layer R, a wiring is formed by a conductor Rb on a dielectric Ra. The wiring structure of the redistribution layer R can be set arbitrarily. For example, the redistribution layer R may have a single layer structure or a multiple layer structure. The materials of the dielectric Ra and the conductor Rb are not particularly limited and are optional. The material of the dielectric Ra is, for example, a polyimide resin, silicon oxide (SiOx), or a photosensitive resin such as photosensitive epoxy. The material of the conductor Rb is, for example, a metal such as aluminum, copper, titanium, nickel, gold or the like. The thickness of the rewiring layer R is not particularly limited and is arbitrary. For example, from the viewpoint of stability and thinning of the substrate 5, the thickness is set to several micrometers or more and several tens of micrometers or so.

  The bump B is an electrode which is formed to be connected to the redistribution layer R and used for connection with other electronic components. The shape, size, and type of the bumps B are not particularly limited and are arbitrary. The material for forming the bumps B is not particularly limited and is arbitrary, and, for example, gold, silver, copper, tin, a solder material, and the like can be used.

  As described above, the substrate 5 preferably has a thermal expansion coefficient that satisfies a predetermined relationship with the thermal expansion coefficient of the support 2. The thickness of the substrate 5 is not particularly limited, but is preferably 100 μm or more and 1000 μm or less from the viewpoint of suppressing the warpage of the laminate 1.

  In addition, said board | substrate 5 is an example, Comprising: Another form may be sufficient. For example, the substrate 5 may include at least the electronic component E. For example, the substrate 5 may not include at least one of the redistribution layer R and the bump B. Further, the shape of the substrate 5 is arbitrary and may not be layered or plate-like.

(Warpage of laminate)
The amount of warpage per unit length of the laminate 1 is 10 μm / mm or less, preferably 5.0 μm / mm or less, and more preferably 3.0 μm / mm or less. Here, “the amount of warpage per unit length” means the maximum height difference in a predetermined cross section of the surface of the support 2 on the side where the separation layer 3 is not laminated is D, and the length of the predetermined cross section (distance between both ends) Is an amount represented by D / L when L is L. The maximum height difference D can be measured by a laser displacement meter or the like. Thus, the laminated body 1 of this embodiment is that by which curvature was suppressed. As a result, in the laminate 1, misalignment and the like can be suppressed, and the yield of the manufactured electronic component E (electronic device 10) can be increased. For this reason, the laminate 1 can be suitably used, for example, in the manufacture of the electronic device 10 described later.

[Method of manufacturing laminate]
Next, the manufacturing method of the layered product concerning this embodiment is explained. The manufacturing method of this laminated body is a method of manufacturing the laminated body 1 of above-mentioned this embodiment. FIG.2 and FIG.3 is a flowchart which shows the manufacturing method of the laminated body of this embodiment. 4 to 6 are diagrams for explaining the method of manufacturing the laminate of the present embodiment. In the manufacturing method of the present laminate, the same parts as those of the above-described embodiment 1 of the present embodiment, such as the characteristics of each part (separation layer 3, adhesive layer 4, substrate 5) of the laminate 1 will be described appropriately. I omit it.

  In the method of manufacturing the laminate, as shown in step S1 of FIG. 2A, the substrate 5 having the electronic component E molded by the mold material M and the thermal expansion coefficient are 3 ppm / K or more and 14 ppm / K or less It includes laminating the support 2 via the separation layer 3 which is denatured by a predetermined treatment.

  For example, step S1 includes, as shown in step S2 shown in FIG. 2B, laminating the support 2, the separation layer 3, the adhesive layer 4 and the substrate 5 in this order. . Step S2 is performed, for example, by steps S3 to S5 shown in FIG. 2 (B).

  In step S3, the separation layer 3 is laminated on the support 2. In step S3, first, the above-described support 2 is prepared (see FIG. 4A). At this time, as described above, assuming that (the thermal expansion coefficient of the support 2 / the thermal expansion coefficient of the substrate 5) is X, X satisfies 0.5 ≦ X ≦ 1.2. preferable.

  Moreover, it is preferable that the thermal expansion coefficient of the support body 2 is set based on the curvature amount of the laminated body 1 manufactured using the support body 2 of a several different thermal expansion coefficient. This is because the warpage of the laminate 1 can be changed due to a plurality of factors such as the material, size, thickness, manufacturing method (processing method) and the like that constitute the laminate 1. The inventor of the present application, as will be described later as a reference example, in the laminate 1 when the configuration and manufacturing method are the same except for the support 2, the amount of warpage of the laminate 1 correlates with the thermal expansion coefficient of the support 2. Have found that. For example, the amount of warpage of a laminate manufactured using support 2 having a thermal expansion coefficient of A1 is W1, and the amount of warpage of a laminate manufactured using support 2 having a thermal expansion coefficient of A2 is W2 In the case, the thermal expansion coefficient (A1, A2) and the amount of warpage (W1, W2) have a correlation. Thereby, the thermal expansion coefficient of the support body 2 to be used can estimate and set the thermal expansion coefficient of the support body 2 in which the curvature amount of the laminated body 1 becomes small based on said correlation. In this case, the warpage of the laminate 1 can be reliably suppressed.

  Next, the separation layer 3 is laminated on the prepared support 2. For example, a solution for forming the separation layer 3 in which the material for forming the separation layer 3 described above is dissolved is applied to one surface of the support 2 and dried to evaporate the solvent, as shown in FIG. As shown in 2.), the separation layer 3 is laminated on the support 2. As the method of application, for example, methods such as spin coating, dipping, roller blade, spray application, slit application and the like can be used.

  Subsequently, in step S4, the adhesive layer 4 is laminated on the separation layer 3. For example, as shown in FIG. 4C, a solution for forming the adhesive layer 4 in which the material for forming the adhesive layer 4 described above is dissolved is coated on the separation layer 3 and dried to evaporate the solvent. Thus, the adhesive layer 4 is laminated on the separation layer 3. The method of application is the same as in step S3. When the separation layer 3 doubles as the adhesive layer 4 as described above, step S4 may not be performed.

  Subsequently, in step S5, the substrate 5 having the electronic component E molded by the mold material M is laminated on the adhesive layer 4. In the method of manufacturing a laminate according to this embodiment, in step S5, a method of forming a redistribution layer R for an electronic component E called a chip first (RDL last) in the method of manufacturing a fan-out type package is disclosed. Although it demonstrates, another aspect may be sufficient. For example, as a method of laminating the substrate 5 on the adhesive layer 4, a method of laminating the electronic component E on the rewiring layer R may be used after forming the so-called RDL first rewiring layer R. A plurality of electronic components E (mold wafers) previously molded with a molding material M may be stacked on the adhesive layer 4, or a plurality of individual electronic components E molded with a molding material M in advance, on the bonding layer 4. It may be stacked.

  For example, step S5 is performed by steps S6 to S10 shown in FIG. For example, in step S6, the electronic component E is laminated on the adhesive layer 4. As shown in FIG. 5A, in the adhesive layer 4, a plurality of electronic components E are arranged in a predetermined arrangement. For example, lamination of the electronic component E on the adhesive layer 4 is performed by arranging a plurality of electronic components E in a predetermined arrangement in advance on an adhesive support or the like and transferring the same to the adhesive layer 4. In addition, the method of laminating | stacking the electronic component E to the contact bonding layer 4 is not limited to said method, It is arbitrary.

  Subsequently, in step S7 of FIG. 3, the electronic component E is molded with the molding material M. For example, as shown in FIG. 5B, a mold material obtained by dissolving the above-described forming material of the mold material M with a solvent is applied to cover the electronic component E by a coating device, and dried to evaporate the solvent. Thus, the entire electronic component E is molded with the molding material M. The thermal expansion coefficient of the molding material M is preferably 4 ppm / K or more and 12 ppm / K or less, and more preferably 5 ppm / K or more and 10 ppm / K or less. In addition, lamination | stacking of the electronic component E to the contact bonding layer 4 is not limited to said method, Another method may be used. For example, in the lamination of the electronic component E on the adhesive layer 4, the layer of the electronic component E molded with the molding material M such as a sealing material sheet is previously made in a state where the plurality of electronic components E are arranged in a predetermined arrangement. The layer may be made and laminated to the adhesive layer 4.

  Subsequently, in step S8 of FIG. 3, the terminal T of the electronic component E is exposed from the molding material M. For example, as shown in FIG. 5C, the surface of the molding material M (the surface on the + Z side) is subjected to processing such as grinding, polishing, cutting, etc., whereby the terminals of the electronic component E are removed from the molding material M Exposed.

  Subsequently, in step S9 of FIG. 3, the rewiring layer R is formed on the mold material M in which the terminals T of the electronic component E are exposed. The method for forming the redistribution layer R is not particularly limited and is arbitrary. For example, in the present embodiment, first, the layer of the conductor Rb is formed on the mold material M in which the terminals T of the electronic component E are exposed by the subtract method, the additive method or the like, and a predetermined layer is formed on the layer of the conductor Rb. After forming a resist of the pattern of and etching unnecessary conductors Rb, the resist is peeled off to form a predetermined wiring pattern. Then, a protective layer of the dielectric Ra is formed on the wiring pattern, and a rewiring layer R in which the wiring pattern of the conductor Rb is formed on the dielectric Ra is formed as shown in FIG. In addition, the formation method of the redistribution layer R is not limited to said method, Arbitrary methods can be used.

  Subsequently, bumps B are formed on the redistribution layer R in step S10 of FIG. For example, as shown in FIG. 6B, the bump B is formed by removing a predetermined portion of the dielectric Ra layer to expose the redistribution layer R and supplying the material of the bump B to the exposed portion. Then, the bumps B are formed on the redistribution layer R. Through the above steps, the laminate 1 of the above-described embodiment shown in FIG. 1 can be manufactured. Note that whether or not to form the bumps B is optional.

[Method of manufacturing electronic device]
Next, a method of manufacturing the electronic device of the present embodiment will be described. The method of manufacturing the electronic device is a method of manufacturing the electronic device 10 using the laminate 1 of the above-described embodiment. FIG. 7 is a flowchart showing the method of manufacturing the electronic device of the present embodiment. 8 and 9 are views for explaining the method of manufacturing the electronic device of this embodiment. In the present specification, the “electronic device” means a device, an element, and a component provided with the electronic component E.

  The method of manufacturing the electronic device includes manufacturing a laminate by the above-described method of manufacturing a laminate, degenerating the separation layer 3 to separate the support 2 from the laminate 1, and bonding layer 4 from the substrate 5. And removing the separation layer 3 to obtain the electronic device 10 including the electronic component E. The method of manufacturing the electronic device can be performed, for example, by steps S11 to S15 shown in FIG.

  For example, in step S11, the substrate 5 described above is supported by the support member 8. For example, the support member 8 can use a member that supports the substrate 5 such as adhesive tape (sheet) and is removable from the substrate 5.

  Subsequently, in step S12, the separation layer 3 is altered by a predetermined process. The predetermined processing is determined based on the nature of the separation layer 3. For example, the predetermined process is a process of allowing the separation layer 3 to absorb light when the separation layer 3 absorbs light and is degraded, and a process of heating the separation layer 3 when the separation layer 3 is degraded by heating That is, in the case where the separation layer 3 is denatured by a compound, the separation layer 3 is treated (contacted) with the compound. Among them, in the method of manufacturing an electronic device, the support 2 is formed of a material that transmits light, and the separation layer 3 is formed of a material that absorbs light to deteriorate, and light is irradiated through the support 2 in a predetermined process. It is preferable to be a process which makes the separation layer 3 absorb light by carrying out. In this case, the separation layer 3 can be specifically altered by a simple process. For example, as shown in FIG. 8B, the separation layer 3 is irradiated with light through the support 2 by a laser or the like that generates light of a wavelength that alters the separation layer 3. It is preferable that the separation layer 3 be transformed into a state of being broken by receiving a slight external force. In FIG. 8 (B), reference numeral "3a" indicates a state of deterioration.

  Subsequently, in step S13, the support 2 is separated from the laminate 1. In the present embodiment, the separation layer 3 is denatured into a broken state by receiving a slight external force. For example, as shown in FIG. 8C, the support 2 is moved relative to the separation layer 3 Thus, the separation layer 3 is broken, and the substrate 5 can be easily separated from the support 2.

  Subsequently, in step S14, the separation layer 3 and the adhesive layer 4 are removed from the substrate 5. In the present embodiment, as described above, the separation layer 3 and the adhesive layer 4 are set so as to be dissolved by a predetermined solvent, and are separated by performing treatment with a predetermined solvent as shown in FIG. The layer 3 and the adhesive layer 4 are removed from the substrate 5. After the separation layer 3 and the adhesive layer 4 are removed, the solvent is washed and dried.

  Subsequently, in step S15, the substrate 5 is diced. For example, in step S15, as shown in FIG. 9B, the substrate 5 is diced in predetermined units. The method of dicing is not particularly limited and is optional. For example, this dicing can be performed by blade dicing, laser dicing or the like. Thereby, the electronic device 10 which solidified the board | substrate 5 of the laminated body 1 is manufactured. In the present embodiment, since the laminate 1 in which warpage is suppressed is used, the yield of the electronic component to be manufactured can be increased.

  As explained above, the method of manufacturing a laminate according to the present embodiment can manufacture a laminate in which warpage is suppressed. Further, in the laminate of the present invention, warpage is suppressed. Moreover, since the manufacturing method of the electronic device of this embodiment uses the laminated body by which curvature was suppressed, the yield of the electronic component to manufacture can be made high.

  Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited by these examples.

[Examples 1 to 6]
In Examples 1 to 6, the laminate 1 shown in FIG. 1 was manufactured using a plurality of supports having different thermal expansion coefficients, and the warpage of the laminate 1 was evaluated.

(Production of laminate)
The layered product 1 of Examples 1-6 was manufactured using the manufacturing method of the layered product of the above-mentioned this embodiment as follows. The laminate of each example was manufactured using the following materials. In each example, the support 2 was a disk-shaped glass having a diameter of 200 mm, a thickness of 700 μm, and a thermal expansion coefficient of 3.2 to 10.5 ppm / K (shown in FIG. 10). The separation layer 3 was formed of a fluorocarbon separation layer and had a thickness of 0.4 μm. The adhesive layer 4 was formed with a thickness of 30 μm using TZNR (registered trademark) -A4017 (modulus 0.27 MPa) manufactured by Tokyo Ohka Kogyo Co., Ltd. The substrate 5 is formed by molding a plurality of electronic components E with a molding material M. The thickness of the substrate 5 was 300 μm and 490 μm in each example. In Examples 1 to 6, the thermal expansion coefficient of the substrate 5 was in the range of 8 to 10 ppm / K. The separation layer 3 and the adhesive layer 4 were formed by applying a material liquid in which the material is dissolved by a coating apparatus and then heating. In addition, lamination of the substrate 5 and the adhesive layer 4 was performed by laminating the substrate 5 having a plurality of electronic components E (mold wafers) molded by the molding material M on the laminate 1.

(Measurement of warpage)
The manufactured laminated body 1 was mounted on a surface plate, and the maximum height difference D in a predetermined cross section of the laminated body 1 was measured by a laser displacement meter. The predetermined cross section was in the diameter direction of the disc-like laminate 1. Warpage of the laminate 1 in each example is shown in FIG. In FIG. 10, the sign “+” of the warpage of the laminate 1 indicates the warpage in the direction in which the laminate 1 shown in FIG. 1 protrudes upward (Smile), and the “-” of the warpage of the laminate 1 The symbol “” indicates a warp in the direction in which the laminate 1 shown in FIG. 1 protrudes downward and protrudes.

  In addition, the curvature of the board | substrate 5 in the state before laminating | stacking on the contact bonding layer 4 was also measured with the laser displacement meter. As a result, the substrate 5 having a thickness of 300 μm is directed downward and along the direction (-direction) in which the center protrudes, and the maximum height difference is 2022 μm (the amount of warpage per unit length is 10.1 μm / mm) The substrate with a thickness of 490 μm is directed upward and along the direction in which the center protrudes (+ direction), and the maximum height difference is 3429 μm (the amount of warpage per unit length is 17.1 μm / mm). there were.

In Examples 1 to 6, the amount of warpage per unit length of the laminate 1 was determined by the following equation.
Formula: “warpage amount per unit length of laminate 1” = “absolute value of warpage amount of laminate 1 (μm)” / diameter of support (200 mm)
The results are shown below. It also indicates the direction of warpage.
Example 1:
300 μm thick substrate: 1544 μm / 200 mm = 7.720 μm / mm (plus direction)
490 μm thick substrate: 1989 μm / 200 mm = 9.945 μm / mm (plus direction)
Example 2:
300 μm thick substrate: 1665 μm / 200 mm = 8.325 μm / mm (plus direction)
490 μm thick substrate: 1602 μm / 200 mm = 8.010 μm / mm (plus direction)
Example 3:
Substrate of 300 μm thickness: 972 μm / 200 mm = 4.86 μm / mm (plus direction)
490 μm thick substrate: 1063 μm / 200 mm = 5.315 μm / mm (plus direction)
Example 4:
Substrate of 300 μm thickness: 660 μm / 200 mm = 3.3 μm / mm (+ direction)
490 μm thick substrate: 658 μm / 200 mm = 3.29 μm / mm (plus direction)
Example 5:
Substrate of 300 μm thickness: 810 μm / 200 mm = 4.05 μm / mm (-direction)
490 μm thick substrate: 222 μm / 200 mm = 1.11 μm / mm (-direction)
Example 6:
300 μm thick substrate: 2012 μm / 200 mm = 10.06 μm / mm (-direction)
490 μm thick substrate: 1842 μm / 200 mm = 9.21 μm / mm (-direction)

(result)
As shown in FIG. 10, in the laminate 1 of the present embodiment, it is confirmed that the warpage is suppressed. Further, from the results of Examples 1 to 6, it was confirmed that the direction of warpage of the laminate 1 changes continuously depending on the thermal expansion coefficient of the support 2. It is also confirmed that the amount of warpage of the laminate 1 manufactured using the supports 2 of a plurality of different thermal expansion coefficients performed in Examples 1 to 6 has a correlation with the thermal expansion coefficient of the support 2, The amount of warpage of the body 1 is predicted to be close to zero at a thermal expansion coefficient of the support 2 of about 6.5.

  The technical scope of the present invention is not limited to the aspect described in the above-described embodiment and the like. One or more of the requirements described in the above embodiments and the like may be omitted. Further, the requirements described in the above-described embodiment and the like can be combined as appropriate. In addition, the disclosures of all the documents cited in the above-described embodiments and the like are incorporated as part of the description of the text as far as the laws and regulations permit.

Reference Signs List 1 laminate 2 support 3 separation layer 4 adhesive layer 5 substrate 8 support member 10 electronic device B bump E Electronic component M: mold material R: rewiring layer Ra: dielectric Rb: conductor T: terminal

Claims (11)

  A laminate comprising laminating a substrate having an electronic component molded with a mold material and a support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less via a separation layer which is denatured by a predetermined treatment How to make the body.   The manufacturing method of the laminated body of Claim 1 including laminating | stacking the said support body, the said isolation | separation layer, an adhesive layer, and the said board | substrate in this order.   The method for manufacturing a laminate according to claim 2, wherein the adhesive layer is made of a thermoplastic material.   The method for manufacturing a laminate according to claim 2, wherein the adhesive layer has a modulus of 0.05 MPa or more and 5.00 MPa or less. The relationship between the thermal expansion coefficient of the support and the thermal expansion coefficient of the substrate is
0.5 ≦ (thermal expansion coefficient of support / thermal expansion coefficient of substrate) ≦ 1.2
The manufacturing method of the laminated body as described in any one of Claim 1 to 4 which satisfy | fills the relationship of (1). The thickness of the substrate is 100 μm or more and 1000 μm or less.
The method for manufacturing a laminate according to any one of claims 1 to 5, wherein a thickness of the support is 400 μm or more and 1200 μm or less, and is thicker than a thickness of the substrate. The support is formed of a light transmitting material,
The method for producing a laminate according to any one of claims 1 to 6, wherein the separation layer is denatured by absorption of light.   The method for manufacturing a laminate according to any one of claims 1 to 7, wherein the support is glass. The substrate includes the electronic component and a redistribution layer connected to the electronic component.
Molding the electronic component with a molding material;
The method for manufacturing a laminate according to any one of claims 1 to 8, comprising forming the rewiring layer.   A laminate in which a support having a thermal expansion coefficient of 3 ppm / K or more and 14 ppm / K or less, a separation layer which is denatured by a predetermined treatment, an adhesive layer, and a substrate are laminated in this order. Producing a laminate by the method for producing a laminate according to any one of claims 1 to 9;
Degrading the separation layer to separate the support from the laminate;
Removing the adhesive layer and the separation layer from the substrate to obtain an electronic device including the electronic component.

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