TWI784117B - Manufacturing method of laminated body, laminated body, and manufacturing method of electronic device - Google Patents

Abstract

[Problem] Suppress warping of laminates with electronic components. [Solution] A method of manufacturing a laminate comprising the steps of: laminating an electronic part molded from a molding material (M) through a separation layer (3) degraded by a predetermined treatment (E) The substrate (5) and the support (2) having a coefficient of thermal expansion of not less than 3 ppm/K and not more than 14 ppm/K.

Description

Manufacturing method of laminated body, laminated body, and manufacturing method of electronic device

The present invention relates to a method for manufacturing a laminate, a method for manufacturing a laminate, and an electronic device.

In the field of semiconductors, in recent years, packages for filling electronic components at the wafer level and panel level have been used. For example, the fan-out package is a package with a structure in which "the rewiring formed on the semiconductor chip (chip) is extended to the outer side of the chip", and because it can realize the miniaturization of the package or the high density of the wiring , so it has attracted much attention. As a method of manufacturing such a fan-out packaged semiconductor, a method is known in which a plurality of electronic components are mounted on a support and sealed with a molding material to form a wiring structure (rewiring), The support body is removed from the laminated body and singulated (for example, the following patent document 1). [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2008-306071

Conventionally, warping may occur in laminates including electronic components as in Patent Document 1. When the laminate is warped, a positional shift or the like occurs, which easily causes defects in electronic components and lowers the yield. In particular, in the case of downsizing the package and increasing the density of wiring, defects in electronic parts are likely to occur. Therefore, the inventors of the present application studied the materials of each part of the laminated body as described above, and found that the warping of the laminated body can be suppressed by using a support with a predetermined thermal expansion coefficient, thereby completing this invention.

In view of the above circumstances, the present invention aims at suppressing warping of a laminate having electronic components.

According to the first aspect of the present invention, there is provided a method of manufacturing a laminate, which includes the following steps: through a separation layer that is degenerated by a predetermined treatment, and laminated with electrons molded from a molding material. The substrate of the part and the support body whose thermal expansion coefficient is not less than 3ppm/K and not more than 14ppm/K.

According to the second aspect of the present invention, there is provided a laminate, which is a support having a coefficient of thermal expansion of 3 ppm/K to 14 ppm/K, a separation layer, an adhesive layer, and a substrate that are degraded by a predetermined treatment. layered.

According to a third aspect of the present invention, there is provided a method of manufacturing an electronic device, which includes: manufacturing a laminate by the above-mentioned method of manufacturing a laminate; changing the quality of the separation layer, and separating the support from the laminate; And removing the adhesive layer and the separation layer from the substrate to obtain an electronic device including electronic components.

The method for producing a laminate of the present invention can produce a laminate in which warpage is suppressed. Also, in the laminate of the present invention, warpage is suppressed. Also, since the method of manufacturing an electronic device of the present invention uses a laminated body in which warping is suppressed, the yield of the manufactured electronic parts can be improved.

[implementation form]

Embodiments will be described. In the following description, the XYZ orthogonal coordinate system shown in FIG. 1 etc. is referred suitably. In the XYZ orthogonal coordinate system, the X direction and the Y direction are the horizontal direction (horizontal direction), and the Z direction is the vertical direction. Also, in each direction, the same side as the front end of the arrow is referred to as + side (for example, +Z side), and the side opposite to the front end of the arrow is called - side (for example, -Z side) as appropriate. For example, in the vertical direction (Z direction), the upper side is the +Z side, and the lower side is the -Z side. In addition, in the drawings, in order to explain the embodiment, a part or the whole is schematically described, a part is enlarged or highlighted and described, etc., and a part represented by changing the scale as appropriate is included.

[laminated body]

The laminated body of this embodiment is demonstrated. Fig. 1 is a cross-sectional view viewed from the -Y side of a laminate showing the present embodiment. The laminated body 1 is provided with the support body 2, the separation layer 3, the adhesive layer 4, and the board|substrate 5 as shown in FIG. In the laminated body 1, the support body 2, the separation layer 3, the adhesive layer 4, and the board|substrate 5 which has the electronic component E are laminated|stacked in this order. The laminate 1 is used to manufacture an electronic device 10 including an electronic component E (see FIG. 9(B)). The laminated body 1 includes a structure in which "the rewiring layer R formed on the electronic component E is extended beyond the outer shape of the electronic component E", that is, a so-called fan-out package structure. In addition, in this embodiment, although the laminated body 1 was demonstrated as the structure containing what is called a fan-out type panel level package, it may be other aspects.

(support body) The support body 2 supports the separation layer 3 , the bonding layer 4 and the substrate 5 . On one surface of the support body 2 (in FIG. 1 , the surface on the +Z side), a separation layer 3 is laminated. The size, thickness and shape of the support body 2 can be set arbitrarily, respectively. For example, the size of the outer shape of one side or a diameter of the support body 2 can be set to about 10 mm or more and 1000 mm or less. Also, for example, from the viewpoint of suppressing warping of the laminate 1, the thickness of the support body 2 is preferably set to be 400 μm or more and 1200 μm or less. Also, from the viewpoint of suppressing warpage of the laminate 1, the thickness of the support body 2 is preferably thicker than the thickness of the substrate 5 described later. Also, for example, the shape of the support body 2 is a shape such as a plate shape such as a rectangular shape or a circular shape.

The support body 2 has a coefficient of thermal expansion (coefficient of thermal expansion, CTE) of 3ppm/K to 14ppm/K, preferably 4ppm/K to 9ppm/K, more preferably 5ppm/K to 8ppm/K. When the thermal expansion coefficient of the support body 2 is the said range, the warp of the laminated body 1 can be suppressed. This is considered to be because when the thermal expansion coefficient of the support body 2 is in the above-mentioned range, it matches the thermal expansion coefficient of the substrate 5 . Wherein, the coefficient of thermal expansion of the support body 2 and the coefficient of thermal expansion of the substrate 5 is when (the coefficient of thermal expansion of the support body 2/the coefficient of thermal expansion of the substrate 5) is set to X, X is preferably satisfying 0.5≦X≦1.2, And it is more preferable to satisfy 0.8≦X≦1.0. In addition, the thermal expansion coefficient of the substrate 5 is preferably not less than 4 ppm/K and not more than 12 ppm/K, and more preferably not less than 5 ppm/K and not more than 10 ppm/K. In addition, the thermal expansion coefficients of the support body 2 and the substrate 5 can be obtained by using a known thermal expansion coefficient measuring device or the like, respectively. Also, in the present invention, there are cases where the expansion and contraction behavior of the molding material M provided on the support body 2 has a dominant influence on the warpage of the laminate 1 . In this case, the thermal expansion coefficient of the substrate 5 can be considered to be equal to the thermal expansion coefficient of the molding material M. From such a viewpoint, the thermal expansion coefficient of the molding material M is preferably 4 ppm/K to 12 ppm/K, and more preferably 5 ppm/K to 10 ppm/K. In addition, the thermal expansion coefficient of the molding material M can be obtained by separately obtaining a test piece by hardening the composition for sealing and analyzing the test piece with a thermal expansion coefficient measuring device.

The material for forming the support body 2 is not particularly limited but arbitrary, but the separation layer 3 to be described later is a material that can transmit light of a wavelength at which the separation layer 3 is modified when it is modified by light. The result is better. In this case, since the light that modifies the separation layer 3 can be irradiated to the separation layer 3 through the support 2 , the treatment for modifying the separation layer 3 can be easily performed (see FIG. 8(B) ).

The material for forming the above-mentioned support body 2 is, for example, glass, ceramics, single crystal material, and the like. Among them, glass is preferable as the material for forming the support body 2 from the viewpoints of cost of materials, ease of acquisition of materials, and the like. In addition, when the forming material of the support body 2 is glass, the composition of glass is not specifically limited but arbitrary. As such glass, known glass can be used.

(separation layer) The separation layer 3 is formed on the support body 2 . The separation layer 3 is attached to the laminated body 1 and formed between the support body 2 and the adhesive layer 4 (substrate 5 ). The separation layer 3 is degenerated by a predetermined treatment. Thereby, the laminated body 1 can separate the support body 2 and the substrate 5 by changing the quality of the separation layer 3 . For example, the separation layer 3 may use a material (material) that undergoes modification by absorption of light, heating, denaturation (for example, decomposition, dissolution) of the separation layer 3 and action of a compound. When the separation layer 3 is degenerated by light absorption, a treatment for specifically deteriorating the separation layer 3 can be easily applied.

In addition, in this specification, the separation layer 3 "degenerates" means changing to a state in which the adhesive force of the layer in contact with the separation layer 3 is lowered. It is preferable that the separation layer 3 is deteriorated into a state in which the separation layer 3 is destroyed by a little external force. As a result of deterioration, the separation layer 3 loses its strength or adhesiveness before deterioration. For example, the separation layer 3 becomes brittle by deterioration. The deterioration of the separation layer 3 occurs as a result of the aforementioned predetermined treatment and can be controlled. In the present embodiment, the separation layer 3 is set so that the support body 2 is moved relative to the separation layer 3 by a predetermined process, thereby deteriorating to such an extent that the separation layer 3 is destroyed. Thereby, the laminated body 1 can easily separate the substrate 5 from the support body 2 .

The material for forming the separation layer 3 is not particularly limited and is arbitrary. In the case where the material for forming the separation layer 3 is a material that undergoes deterioration by light absorption, the material described in International Publication No. 2013/008540, that is, fluorocarbons, which contain light-absorbing elements in its repeating unit, can be used. Structured polymers, inorganic substances, compounds with infrared-absorbing structures, etc. In the case where the material for forming the separation layer 3 is the above-mentioned material, it undergoes deterioration due to light absorption and loses the strength or adhesiveness before light absorption, and can be removed by applying a little external force (for example, making the support 2 relative to the separation layer) 3 moving, etc.) to break and easily separate the support body 2 and the substrate 5. In addition, when the material for forming the separation layer 3 is a material that undergoes deterioration by light absorption, the light absorption rate is preferably 80% or more. Also, when the separation layer 3 is a material that undergoes modification by absorption of light, the wavelength of light that undergoes modification is arbitrary. When the separation layer 3 is a material that undergoes deterioration by absorption of light, the separation layer 3 undergoes deterioration by, for example, absorbing light irradiated from a laser.

Also, when the material for forming the separation layer 3 is a material that undergoes deterioration by heating, for example, a known pyrolytic resin that undergoes deterioration at a predetermined temperature can be used. In this case, the predetermined temperature at which the separation layer 3 deteriorates can be appropriately set by the method of manufacturing the laminate 1 and adjusted by the material of the pyrolytic resin.

In addition, it is preferable that the separation layer 3 is a material that is dissolved in a predetermined solvent so that it can be easily removed from the substrate 5 . The solvent for dissolving the separation layer 3 is not particularly limited, but for example, when the separation layer 3 is a material that absorbs the above-mentioned light and undergoes deterioration, aliphatic amines containing primary, secondary, and tertiary can be used. , solvents for amine compounds such as alicyclic amines, aromatic amines, and heterocyclic amines.

The thickness of the separation layer 3 is not particularly limited, but is preferably in a range of, for example, 0.05 μm or more and 50 μm or less. When the thickness of the separation layer 3 is within the above-mentioned range, the separation layer 3 can be more reliably modified by simple treatment (for example, short-time light irradiation, low-energy light irradiation, etc.).

(next layer) Next layer 4 is formed on the separation layer 3 . A subsequent layer 4 , attached to the laminate 1 , is formed between the separation layer 3 and the substrate 5 . The bonding layer 4 is used to bond the separating layer 3 and the substrate 5 .

The next layer 4 is preferably made of thermoplastic material. In the case where the adhesive layer 4 is made of a thermoplastic material, since it can be hardened by dissolving it by heat and cooling it, the handling and control at the time of manufacture are relatively easy. The modulus (tensile stress) of the next layer 4 is preferably not less than 0.05 MPa and not more than 5.00 MPa, and more preferably not less than 0.1 MPa and not more than 3.00 MPa. When the modulus of the adhesive layer 4 is within the above-mentioned range, warping of the laminate 1 due to the adhesive layer 4 can be suppressed.

The material for forming the adhesive layer 4 is not particularly limited and is arbitrary. For example, the forming material of the adhesive layer 4 is a resin with adhesive properties, wherein, any one of hydrocarbon resin, acrylic-styrene resin, maleimide resin, elastomer resin, and polyester resin, or any of these A combination of these resins is preferred. The following layer 4 is preferably a material that is dissolved by a predetermined solvent so as to be easily removed from the substrate 5 . The solvent in which the adhesive layer 4 is dissolved is not particularly limited and is optional, but for example, hexane, heptane, octane, nonane, isononane, methyl octane, decane, undecane, deca Linear hydrocarbons such as dioxane and tridecane, branched chain hydrocarbons with 4 to 15 carbon atoms, such as rings of cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene, tetrahydronaphthalene, etc. Like hydrocarbons, p-menthane, o-menthane, m-menthane, diphenylmethane, etc. Such an adhesive layer 4 can be formed using TZNR (registered trademark)-A4017, A3007, etc. manufactured by TOKYO OHKA KOGYO Co., Ltd., for example.

The thickness of the adhesive layer 4 is not particularly limited, but is preferably 10 μm or more and 150 μm or less from the viewpoint of, for example, adhesiveness and ease of removal of the adhesive layer 4 .

In addition, the adhesive layer 4 may also have the characteristic of the above-mentioned separation layer 3, that is, the characteristic of being altered by a predetermined treatment. That is, the separation layer 3 may also serve as the adhesive layer 4 . In this case, the laminate 1 may not be provided with the adhesive layer 4 . The material for forming the separation layer 3 is, for example, a material that mixes a light-absorbing material with an adhesive resin, such as a material that mixes carbon black or the like with an acrylic ultraviolet curable resin, or an infrared-absorbing material of glass bubbles. materials mixed with adhesive resin, etc.

(substrate) The substrate 5 is formed on the adhesive layer 4 . The substrate 5 has a plurality of electronic components E molded (sealed) with a molding material M, a redistribution layer R (RDL (Redistribution Layer)) and bumps B. As shown in FIG. The substrate 5 of this embodiment is a sealed body substrate having a fan-out package structure. The substrate 5 is singulated (diced) to form a plurality of electronic devices 10 (see FIG. 9(B)). Here, the adhesive layer 4 is covered with a member "intermittently constituted by a combination of the molding material M and the electronic component E provided in the substrate 5" mostly.

Each electronic component E is molded from molding material M. The molding material M is molded so as to cover the electronic parts E. The molding material M is used to mold the opposite surface (the surface on the +Z side) and the side surfaces (the surface on the ±X side and the surface on the ±Y side) of the adhesive layer 4 on each electronic component E. The thickness of the molding material M is not particularly limited but arbitrary. The forming material of the molding material M is not particularly limited and is optional. The forming material of the molding material M is, for example, an epoxy-based resin, a silicon-based resin, or the like. In addition, the electronic component E is not particularly limited but arbitrary. For example, electronic components E are semiconductor chips, MEMS (Micro Electro Mechanical Systems), transistors, capacitors, resistors, and the like. In addition, the plurality of electronic components E may be of the same type or different types. Such an electronic part E molded from the molding material M, for example, may also be a plurality of electronic parts E (molded wafer) molded from the molding material M, or may also be made from the molding material M. Each electronic component E molded by M. Also, the electronic component E molded from the molding material M may be single-layered or multi-layered.

The rewiring layer R is a wiring body of a thin film constituting wiring connected to terminals T and the like of the electronic component E. The rewiring layer R is formed on the dielectric material Ra, and the wiring is formed through the conductor Rb. The wiring structure of the rewiring layer R can be set arbitrarily. For example, the redistribution layer R may be a single layer or may have a multi-layer structure. The materials of the dielectric Ra and the conductor Rb are not particularly limited and are arbitrary. The material of the dielectric Ra is, for example, photosensitive resin such as polyimide resin, silicon oxide (SiO _x ), photosensitive epoxy, and the like. The material of the conductor Rb is, for example, metals such as aluminum, copper, titanium, nickel, and gold. The thickness of the rewiring layer R is not particularly limited, but is arbitrary, and is set to, for example, several μm or more and several tens of μm from the viewpoint of stability and thinning of the substrate 5 .

The bump B is formed to be connected to the rewiring layer R, and is used as an electrode for connection to other electronic components. The shape, size, and type of the bump B are not particularly limited and are optional. The material for forming the bump B is not particularly limited and is arbitrary, and for example, gold, silver, copper, tin, and solder materials can be used.

As mentioned above, it is preferable that the thermal expansion coefficient of the substrate 5 satisfies a predetermined relationship with the thermal expansion coefficient of the support body 2 . Also, the thickness of the substrate 5 is not particularly limited, but is preferably 100 μm or more and 1000 μm or less from the viewpoint of suppressing warpage of the laminate 1 .

In addition, the above-mentioned board|substrate 5 is an example, and may be other forms. For example, the board|substrate 5 should just be provided with the electronic component E at least, for example, may not be provided with at least 1 of the rewiring layer R and the bump B. Moreover, the shape of the board|substrate 5 is arbitrary, and it does not need to be a layer shape or a plate shape.

(warping of laminated body) In the laminate 1, the amount of warpage per unit length is 10 μm/mm or less, preferably 5.0 μm/mm or less, more preferably 3.0 μm/mm or less. In addition, the "warpage amount per unit length" refers to the length of the predetermined cross-section (both ends) where the maximum height difference in the predetermined cross-section of the side surface of the separation layer 3 on which the support body 2 is not laminated is assumed to be D. When the distance) is set as L, the amount represented by D/L. The maximum height difference D can be measured by a laser displacement meter or the like. In this way, warpage is suppressed in the laminated body 1 of this embodiment. Thereby, the laminated body 1 can suppress position shift etc., and can improve the yield of the manufactured electronic component E (electronic device 10). Therefore, the laminated body 1 is applicable to the manufacture of the electronic device 10 to be described later, and the like.

[Manufacturing method of laminated body] Next, a method for manufacturing the laminate of this embodiment will be described. The manufacturing method of this laminated body is the method of manufacturing the above-mentioned laminated body 1 of this embodiment. Fig. 2 and Fig. 3 are flow charts showing the method of manufacturing the laminated body of this embodiment. 4 to 6 are diagrams illustrating a method of manufacturing the laminate of this embodiment. In addition, in the manufacturing method of this laminated body, regarding the characteristics of each part (separation layer 3, adhesive layer 4, substrate 5) of the laminated body 1, etc., which are the same as those of the laminated body 1 of the above-mentioned embodiment, Explanation is appropriately omitted.

The manufacturing method of the laminated body, as shown in step S1 of FIG. The substrate 5 of the molded electronic component E and the support body 2 having a coefficient of thermal expansion of not less than 3 ppm/K and not more than 14 ppm/K.

For example, step S1, as shown in step S2 shown in FIG. 2(B), includes the following steps: stacking the above-mentioned support body 2, separation layer 3, bonding layer 4 and substrate 5 in this order. Step S2 is performed, for example, through steps S3 to S5 shown in FIG. 2(B).

In step S3 , the separation layer 3 is laminated on the support body 2 . In step S3, first, the above-mentioned support body 2 is prepared (see FIG. 4(A)). At this time, as mentioned above, when the support body 2 is set as X (the thermal expansion coefficient of the support body 2 /the thermal expansion coefficient of the substrate 5 ), it is preferable that X satisfies 0.5≦X≦1.2.

Moreover, it is preferable to set the thermal expansion coefficient of the support body 2 based on the warpage amount of the laminated body 1 manufactured using several support bodies 2 with different thermal expansion coefficients. This is because the warpage of the laminate 1 can vary depending on a plurality of factors such as the material constituting the laminate 1 , size, thickness, manufacturing method (processing method), and the like. The inventors of the present invention found that, as described later as a reference example, in laminated body 1, when the structure and manufacturing method other than support body 2 are the same, the amount of warping of laminated body 1 is related to that of the support body. The thermal expansion rate of 2 is related. For example, when the amount of warpage of the laminate produced using the support 2 having a thermal expansion coefficient of A1 is W1 and the warpage of the laminate produced using the support 2 having a thermal expansion coefficient of A2 is W2, The coefficients of thermal expansion (A1, A2) and the amounts of warpage (W1, W2) have a correlation. Thereby, the thermal expansion coefficient of the support body 2 used can predict and set the thermal expansion coefficient of the support body 2 which reduces the warpage amount of the laminated body 1 based on the above-mentioned correlation. In this case, warping of the laminate 1 can be reliably suppressed.

Next, the separation layer 3 is laminated on the prepared support body 2 . For example, the liquid that forms the separation layer 3 that dissolves the above-mentioned separation layer 3 forming material with a solvent is applied to one side of the support body 2, and it is dried and the solvent is evaporated, thereby, as shown in FIG. 4(B ) as shown, the separation layer 3 is laminated on the support body 2 . As the method of coating, methods such as spin coating, dipping, wheel blade, spray coating, and slit coating can be used, for example.

Next, in step S4 , the adhesive layer 4 is laminated on the separation layer 3 . For example, a liquid that forms the adhesive layer 4 that dissolves the above-mentioned adhesive layer 4 forming material with a solvent is applied on the separation layer 3, dried and the solvent is evaporated, thereby, as shown in FIG. 4(C) Generally, the adhesive layer 4 is laminated on the separation layer 3 . The coating method is the same as step S3. In addition, as mentioned above, when the separation layer 3 also serves as the adhesive layer 4, step S4 may not be performed.

Next, in step S5 , the substrate 5 having the electronic component E molded from the molding material M is laminated on the adhesive layer 4 . In the manufacturing method of the laminated body of this embodiment, step S5 is used to describe the formation of the redistribution layer R on the so-called chip-first (RDL-first) electronic component E in the fan-out packaging manufacturing method. method, but other forms are also possible. For example, as a method of laminating the above-mentioned substrate 5 on the adhesive layer 4, a method of laminating electronic components E on the redistribution layer R after forming a so-called RDL priority redistribution layer R may be used, or A plurality of electronic parts E (molded wafers) molded from the molding material M may also be laminated on the bonding layer 4 in advance, or a plurality of electronic parts E molded from the molding material M may be laminated in advance. Laminated on the next layer 4.

For example, step S5 is performed through steps S6 to S10 shown in FIG. 3 . For example, in step S6 , the electronic component E is laminated on the adhesive layer 4 . As shown in FIG. 5(A), a plurality of electronic components E are arranged in a predetermined arrangement on the adhesive layer 4 . For example, by arranging a plurality of electronic components E in a predetermined arrangement into an adhesive support or the like, and transferring it to the adhesive layer 4 , the electronic components E are stacked on the adhesive layer 4 . In addition, the method of laminating the electronic component E on the adhesive layer 4 is not limited to the above-mentioned method and is optional.

Next, in step S7 of FIG. 3 , the electronic part E is molded from the molding material M. As shown in FIG. For example, a molding material that dissolves the forming material of the above-mentioned molding material M is coated with a solvent in such a manner as to cover the electronic part E by a coating device, and dried and the solvent is evaporated, thereby, as shown in FIG. 5(B), the entire electronic component E is molded from the molding material M. As shown in FIG. The thermal expansion coefficient of the molding material M is preferably not less than 4 ppm/K and not more than 12 ppm/K, and more preferably not less than 5 ppm/K and not more than 10 ppm/K. In addition, the lamination|stacking of the electronic component E with respect to the adhesive layer 4 is not limited to the above-mentioned method, Other methods may be sufficient. For example, the lamination of the electronic parts E against the bonding layer 4 can also be done in advance by prefabricating the electronic parts molded by the molding material M such as a packaging material sheet in a state where a plurality of electronic parts E are arranged in a predetermined arrangement. E layer, and this layer is laminated on the next layer 4.

Next, in step S8 of FIG. 3, the terminal T of the electronic component E is exposed from the molding material M. As shown in FIG. For example, as shown in FIG. 5(C), the surface of the molding material M (the surface on the +Z side) is subjected to grinding, grinding, cutting, etc., whereby the terminal of the electronic part E is molded from The material M is exposed.

Next, in step S9 of FIG. 3 , a rewiring layer R is formed on the molding material M exposing the terminals T of the electronic component E. As shown in FIG. The method for forming the rewiring layer R is not particularly limited and is arbitrary. For example, in the present embodiment, firstly, a layer of the conductor Rb is formed on the molding material M exposing the terminal T of the electronic component E by a subtractive method, a semi-additive method, etc., and a layer of the conductor Rb is formed. A photoresist with a predetermined pattern is formed on the layer, and after the unnecessary conductor Rb is etched, the photoresist is peeled off to form a predetermined wiring pattern. Furthermore, a protective layer of dielectric material Ra is formed on the wiring pattern, and as shown in FIG. 6(A), a rewiring layer R is formed on the dielectric material Ra. This rewiring layer R is a wiring on which conductor Rb is formed. pattern. In addition, the formation method of the rewiring layer R is not limited to the above-mentioned method, Any method can be used.

Next, in step S10 of FIG. 3 , bumps B are formed on the rewiring layer R. Referring to FIG. For example, bump B is to remove a predetermined portion of the layer of dielectric Ra to expose the rewiring layer R, and supply the material of bump B to the exposed portion, thereby, as shown in FIG. 6(B) , forming the bump B on the redistribution layer R. Through the above-mentioned steps, the above-mentioned laminated body 1 of this embodiment shown in FIG. 1 can be manufactured. In addition, whether or not the bump B is formed is optional.

[Manufacturing method of electronic device] Next, a method of manufacturing the electronic device of this embodiment will be described. The manufacturing method of this electronic device is a method of manufacturing the electronic device 10 using the above-mentioned laminated body 1 of this embodiment. FIG. 7 is a flowchart showing a method of manufacturing an electronic device according to this embodiment. 8 and 9 are diagrams illustrating a method of manufacturing an electronic device according to this embodiment. In addition, in this specification, an "electronic device" means a device, an element, or a component including an electronic component E.

The method for manufacturing an electronic device includes: manufacturing a laminate by the method for manufacturing a laminate described above; changing the quality of the separation layer 3 to separate the support 2 from the laminate 1; and removing the adhesive layer 4 from the substrate 5 and The layer 3 is separated, and the electronic device 10 including the electronic component E is obtained. The manufacturing method of the electronic device, for example, can be performed through steps S11 to S15 shown in FIG. 7 .

For example, in step S11 , the above-mentioned substrate 5 is supported by the supporting member 8 . For example, the supporting member 8 may be a member that supports the substrate 5 such as an adhesive tape (sheet) and is detachable from the substrate 5 .

Next, in step S12, the separation layer 3 is modified by predetermined processing. The predetermined treatment is determined based on the properties of the separation layer 3 . For example, the predetermined treatment refers to the treatment of causing the separation layer 3 to absorb light when the separation layer 3 absorbs light and changes its quality, and the treatment of heating the separation layer 3 when the separation layer 3 is changed by heating. , in the case of a treatment in which the separation layer 3 is altered by a compound, a treatment in which the compound acts (contacts) the separation layer 3 . Wherein, in the manufacturing method of the electronic device, the support body 2 is formed of a material through which light can pass, and the separation layer 3 is formed of a material that absorbs light and undergoes deterioration, and the predetermined treatment is passed through the support body 2 and The method of irradiating light is preferably a treatment in which the separation layer 3 absorbs light. In this case, the separation layer 3 can be specifically degenerated by a simple treatment. For example, as shown in FIG. 8(B), the separation layer 3 is irradiated with light through the support 2 by a laser or the like that generates light of a wavelength that denatures the separation layer 3 . It is preferable for the separation layer 3 to be in a state of being destroyed by a little external force. In addition, in FIG. 8(B), the symbol "3a" represents the state which has changed.

Next, in step S13 , the support body 2 is separated from the laminated body 1 . In this embodiment, the separation layer 3 is changed into a state of being destroyed by a little external force. For example, as shown in FIG. 8(C), the support body 2 is moved relative to the separation layer 3, whereby the separation layer 3 is destroyed, the substrate 5 can be easily separated from the support body 2.

Next, in step S14 , the separation layer 3 and the adhesive layer 4 are removed from the substrate 5 . In this embodiment, as described above, the separation layer 3 and the bonding layer 4 are set to be dissolved by a predetermined solvent, and as shown in FIG. 9(A), they are treated by a predetermined solvent, whereby The separation layer 3 and the bonding layer 4 are removed from the substrate 5 . After removing the separation layer 3 and the subsequent layer 4, the solvent was washed and dried.

Next, in step S15, the substrate 5 is cut. For example, in step S15, as shown in FIG. 9(B), the substrate 5 is cut in predetermined units. The method of cutting is not specifically limited but arbitrary. For example, the cutting can be performed by blade cutting, laser cutting and the like. Thereby, the electronic device 10 in which the board|substrate 5 of the laminated body 1 was singulated is manufactured. In this embodiment, since the laminated body 1 in which warpage is suppressed is used, the yield of electronic components to be manufactured can be improved.

As described above, the method for producing a laminate according to this embodiment can produce a laminate in which warpage is suppressed. Also, in the laminate of the present invention, warpage is suppressed. Also, since the method of manufacturing an electronic device according to this embodiment uses a laminate in which warpage is suppressed, the yield of the manufactured electronic components can be improved. [Example]

Hereinafter, although an Example demonstrates this invention in more detail, this invention is not limited to these examples at all.

[Example 1~6] In Examples 1 to 6, the laminated body 1 shown in FIG. 1 was produced using a plurality of supports having different thermal expansion coefficients, and the warpage of the laminated body 1 was evaluated.

(manufacturing of laminates) The laminated body 1 of Examples 1-6 was manufactured using the manufacturing method of the laminated body of this embodiment mentioned above as follows. The laminated body of each Example was manufactured using the following materials. In each embodiment, the support body 2 is set to be disc-shaped glass with a diameter of 200 mm, a thickness of 700 μm, and a thermal expansion coefficient of 3.2-10.5 ppm/K (as shown in FIG. 10 ). The separation layer 3 was formed by using a fluorocarbon-based separation layer and having a thickness of 0.4 μm. The next layer 4 was formed with a thickness of 30 μm using TOKYO OHKA KOGYO Co., Ltd., TZNR (registered trademark)-A4017 (modulus 0.27 MPa). The substrate 5 is a plurality of electronic parts E molded from the molding material M. As shown in FIG. In each embodiment, the thickness of the substrate 5 is set at 300 μm and 490 μm. In addition, in Examples 1 to 6, the thermal expansion coefficient of the substrate 5 is in the range of 8 to 10 ppm/K. The separation layer 3 and the adhesive layer 4 are formed by heating after applying a material solution for dissolving the material by a coating device. Also, the lamination of the substrate 5 and the adhesive layer 4 is carried out by laminating the substrate 5 having a plurality of electronic parts E (molded wafers) molded from the molding material M on the lamination layer. Body 1.

(Determination of Warpage) The manufactured laminate 1 was placed on a platform, and the maximum height difference D in the predetermined section of the laminate 1 was measured by a laser displacement meter. In addition, the predetermined cross-sectional view is set in the radial direction of the disk-shaped laminated body 1 . In FIG. 10, the warpage of the laminated body 1 in each Example is shown. In addition, in FIG. 10, the sign "+" of the warp of the laminate 1 indicates warpage (upward warpage) in the direction in which the laminate 1 shown in FIG. 1 protrudes upward. The sign "-" of the warpage indicates warpage in the direction in which the laminate 1 shown in FIG. 1 protrudes downward (downward warpage).

In addition, the warpage of the substrate 5 before being laminated with the adhesive layer 4 was also measured with a laser displacement meter. As a result, the substrate 5 with a thickness of 300 μm has a maximum height difference of 2022 μm (the amount of warpage per unit length is 10.1 μm/mm) along the direction in which the center protrudes downward (-direction), and a substrate with a thickness of 490 μm is Along the direction in which the center protrudes upward (+ direction), the maximum height difference is 3429 μm (the amount of warpage per unit length is 17.1 μm/mm).

Moreover, in Examples 1-6, the warpage amount per unit length of the laminated body 1 was calculated|required by the following formula. Formula: "warpage per unit length of laminate 1" = "absolute value of warpage of laminate 1 (μm)"/diameter of support (200mm) The results are shown below. In addition, it also indicates the direction of warping. Example 1: 300μm thick substrate: 1544μm/200mm=7.720μm/mm (+ direction) 490μm thick substrate: 1989μm/200mm=9.945μm/mm (+ direction) Example 2: 300μm thick substrate: 1665μm/200mm=8.325μm/mm (+ direction) 490μm thick substrate: 1602μm/200mm=8.010μm/mm (+ direction) Example 3: 300μm thick substrate: 972μm/200mm=4.86μm/mm (+ direction) 490μm thick substrate: 1063μm/200mm=5.315μm/mm (+ direction) Example 4: 300μm thick substrate: 660μm/200mm=3.3μm/mm (+ direction) 490μm thick substrate: 658μm/200mm=3.29μm/mm (+ direction) Example 5: 300μm thick substrate: 810μm/200mm=4.05μm/mm (-direction) 490μm thick substrate: 222μm/200mm=1.11μm/mm (-direction) Embodiment 6: 300μm thick substrate: 2012μm/200mm=10.06μm/mm (-direction) 490μm thick substrate: 1842μm/200mm=9.21μm/mm (-direction)

(result) It was confirmed that the laminated body 1 of this embodiment suppressed warpage as shown in FIG. 10 . Also, from the results of Examples 1 to 6, it was confirmed that the warping of the laminate 1 depends on the thermal expansion coefficient of the support 2, and the direction of warping changes continuously. Also, it was confirmed that the amount of warping of the laminate 1 manufactured using a plurality of supports 2 with different thermal expansion coefficients in Examples 1 to 6 has a correlation with the thermal expansion coefficient of the support 2, and the layer The amount of warping of the integrated body 1 is predicted to be about 6.5 and close to zero as the coefficient of thermal expansion of the support body 2 .

In addition, the technical scope of the present invention is not limited to the aspects described in the above-mentioned embodiments and the like. One or more of the requirements described in the above-mentioned embodiments and the like may be omitted. In addition, the requirements described in the above-mentioned embodiments and the like can be appropriately combined. In addition, within the scope permitted by laws and regulations, the disclosures of all documents cited in the above-mentioned embodiments and the like are incorporated as a part of the description herein.

1‧‧‧Laminated body 2‧‧‧Support 3‧‧‧Separation layer 4‧‧‧adhesive layer 5‧‧‧substrate 8‧‧‧Support member 10‧‧‧Electronic Devices B‧‧‧Bump E‧‧‧Electronic Parts M‧‧‧Moulding Material R‧‧‧Redistribution layer Ra‧‧‧dielectric Rb‧‧‧conductor T‧‧‧terminal

[ Fig. 1 ] A view showing a laminated body according to an embodiment.

[FIG. 2] (A) and (B) are flow charts which show the manufacturing method of the laminated body of an embodiment.

[FIG. 3] Following FIG. 2, it is a flow chart showing a method of manufacturing a laminate.

[ Fig. 4 ] (A) to (C), are explanatory diagrams of the manufacturing method of the laminated body.

[ Fig. 5 ] Continuing from Fig. 4 , (A) to (C), explanatory diagrams of a method of manufacturing a laminate.

[ Fig. 6 ] Following Fig. 5 , (A) and (B) are explanatory diagrams of a method of manufacturing a laminate.

[ Fig. 7 ] A flowchart showing a method of manufacturing an electronic device according to the embodiment.

[FIG. 8] (A) to (C) are explanatory diagrams of a manufacturing method of an electronic device.

[FIG. 9] Following FIG. 8, (A) and (B), it is an explanatory diagram of a manufacturing method of an electronic device.

[ Fig. 10 ] A graph showing the amount of warpage of laminates in Examples 1 to 6.

Claims (11)

A method for manufacturing a laminate, characterized by comprising the following steps: laminating a substrate having an electronic part molded from a molding material and a thermal expansion coefficient of For the support body of 3 ppm/K or more and 14 ppm/K or less, the warpage of the above-mentioned laminate is 10 μm/mm or less. The manufacturing method of the laminated body as claimed in claim 1 of the patent application, which includes the following steps: laminating the support body, the separation layer, the adhesive layer, and the substrate in this order. The method for manufacturing a laminate as claimed in claim 2, wherein the aforementioned adhesive layer is made of a thermoplastic material. The method for producing a laminate as claimed in Claim 2 or 3, wherein the aforementioned adhesive layer has a modulus of not less than 0.05 MPa and not more than 5.00 MPa. The method for manufacturing a laminate as claimed in claim 2 or 3 of the patent application, wherein the coefficient of thermal expansion of the aforementioned support is equal to the coefficient of thermal expansion of the aforementioned substrate The relationship satisfies the relationship of 0.5≦(thermal expansion coefficient of the support body/thermal expansion coefficient of the substrate)≦1.2. The method for manufacturing a laminate according to claim 2 or 3, wherein the thickness of the aforementioned substrate is not less than 100 μm and not more than 1000 μm, and the thickness of the aforementioned support is not less than 400 μm and not more than 1200 μm, and is thicker than the thickness of the aforementioned substrate . The manufacturing method of the laminated body as claimed in claim 2 or 3, wherein the aforementioned support body is formed of a material through which light can pass, and the aforementioned separation layer is degraded by the absorption of light. The manufacturing method of the laminated body as claimed in claim 2 or 3, wherein the aforementioned support body is glass. The manufacturing method of the laminated body as claimed in claim 2 or 3 of the patent scope, wherein the aforementioned substrate is provided with: the aforementioned electronic components; and a redistribution layer connected to the aforementioned electronic components, and includes the following steps: by The molding material molds the aforementioned electronic parts; and The foregoing redistribution layer is formed. A laminate characterized in that it is formed by laminating a support having a coefficient of thermal expansion of 3 ppm/K to 14 ppm/K, a separation layer and an adhesive layer and a substrate degraded by a predetermined treatment in this order, and the foregoing lamination The warpage of the body is less than 10μm/mm. A method of manufacturing an electronic device, which is characterized in that it includes the following steps: manufacturing a laminate by the method for manufacturing a laminate according to any one of items 1 to 9 in the scope of the patent application; making the aforementioned separation layer degeneration, separating the support from the laminate; and removing the adhesive layer and the separation layer from the substrate to obtain an electronic device including the electronic component.

Images