TW201936278A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

Description

Substrate processing apparatus and substrate processing method

The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

Conventionally, a substrate processing apparatus that forms a liquid film for preventing the liquid on the surface of the substrate and which is in contact with the supercritical fluid and dried the substrate is known (for example, see Patent Document 1).
[Previous Technical Literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-12538

[Problems to be solved by the invention]

However, in the above-described substrate processing apparatus, there is a case where the liquid film is not formed in the substrate properly, and the drying process is performed, and the yield of the substrate after the drying process is lowered.

One aspect of the embodiment is to provide a substrate processing apparatus and a substrate processing method for improving the yield of the substrate.

[Means to solve the problem]

The substrate processing apparatus relating to one aspect of the embodiment includes a liquid amount detecting unit and a cover detecting unit. The liquid amount detecting unit detects the liquid amount of the liquid film formed on the substrate. The cover detecting unit detects the covering state of the substrate due to the liquid film.

[Effects of the Invention]

If one of the modes is implemented, the yield of the substrate can be improved.

Hereinafter, the embodiment of the substrate processing apparatus and the substrate processing method disclosed in the present invention will be described in detail with reference to the attached drawings. In addition, the invention is not limited by the embodiments shown below. In addition, in the drawings referred to below, in order to make the explanation easy to understand, the X-axis direction, the Y-axis direction, and the Z-axis direction which are orthogonal to each other are defined, and the Z-axis positive direction is a perpendicular coordinate system in the vertical direction.

(first embodiment)
[Summary of Substrate Processing System 1]
The substrate processing system 1 according to the first embodiment will be described with reference to Fig. 1 . Fig. 1 is a schematic view showing a schematic configuration of a substrate processing system 1 according to a first embodiment.

The substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are disposed adjacent to each other. The substrate processing system 1 corresponds to a substrate processing apparatus.

The loading/unloading station 2 includes a carrier placing portion 11 and a conveying portion 12. A plurality of carriers C that accommodate a plurality of semiconductor wafers W (hereinafter referred to as wafers W) in a horizontal state are placed on the carrier mounting portion 11.

The transport unit 12 is provided adjacent to the carrier mounting portion 11 and includes a substrate transport device 13 and a receiving portion 14 therein. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 is movable in the horizontal direction and the vertical direction and rotated about the vertical axis, and the wafer W is transported between the carrier C and the receiving unit 14 by using the wafer holding mechanism. The configuration example of the receiving unit 14 will be described later.

The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15, a plurality of washing processing units 16, and a plurality of drying processing units 17. The plurality of washing processing units 16 and the plurality of drying processing units 17 are arranged on both sides of the conveying unit 15 to be provided. In addition, the arrangement or the number of the washing processing unit 16 and the drying processing unit 17 shown in FIG. 1 is an example, and is not limited to the figure.

The conveyance unit 15 is provided with a substrate conveyance device 18 therein. The substrate transfer device 18 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 18 is movable in the horizontal direction and the vertical direction and rotated about the vertical axis, and is used between the receiving portion 14 and the cleaning processing unit 16 and the drying processing unit 17 using the wafer holding mechanism. The wafer W is transported.

The cleaning processing unit 16 performs a specific cleaning process on the wafer W transported by the substrate transfer device 18. The configuration example of the cleaning unit 16 will be described later.

The drying processing unit 17 performs a specific drying process on the wafer W that has been cleaned by the cleaning processing unit 16. The configuration example of the drying processing unit 17 will be described later.

Furthermore, the substrate processing system 1 includes a control device 4. An example of the configuration of the control device 4 will be described later.

In the substrate processing system 1 configured as described above, the substrate transfer device 13 that has been loaded into the transfer station 2 first takes out the wafer W from the carrier C placed on the carrier mounting portion 11, and mounts the taken wafer W thereon. Part 14. The wafer W placed on the receiving unit 14 is taken out from the receiving unit 14 by the substrate transfer device 18 of the processing station 3, and is carried into the cleaning processing unit 16.

The wafer W that has been carried into the cleaning processing unit 16 is subjected to the cleaning process by the cleaning processing unit 16, and then is carried out from the cleaning processing unit 16 by the substrate transfer device 18. The wafer W carried out from the cleaning processing unit 16 is carried into the drying processing unit 17 by the substrate transfer device 18, and is dried by the drying processing unit 17.

The wafer W dried by the drying processing unit 17 is carried out from the drying processing unit 17 by the substrate transfer device 18, and is placed on the receiving unit 14. Then, the processed wafer W placed on the receiving unit 14 is returned to the carrier C of the carrier placing unit 11 by the substrate transfer device 13.

[Summary of the department 14]
Next, the receiving unit 14 will be described with reference to Fig. 2 . FIG. 2 is a cross-sectional view showing a schematic configuration of the receiving unit 14.

The receiving unit 14 includes a casing 40, a pedestal 41, a plurality of lifting members 42 and a load unit 43. In the casing 40, the opening portions 40A and 40B for loading and unloading the wafer W are formed by the substrate transfer devices 13 and 18. The pedestal 41 is disposed inside the casing 40. The pedestal 41 forms an insertion hole into which the elevating member 42 is inserted.

The elevating member 42 is supported by the pedestal 41 so as to be movable up and down by a lifting drive unit (not shown). The elevating member 42 supports the lower surface of the wafer W when the wafer W carried in by the substrate transfer device 13 and the substrate transfer device 18 is placed on the front end of the elevating member 42. In a state where the lifting member 42 supports the wafer W, the wafer W is placed on the load unit 43 when descending from the specific receiving position by the elevation driving portion. Further, in a state where the wafer W is placed on the load unit 43, when the elevating member 42 is raised by the elevating drive portion, the elevating member 42 abuts against the lower surface of the wafer W to support the wafer W and crystallize The circle W rises to the receiving position.

The load unit 43 measures the weight of the wafer W loaded from the carrier C or the wafer W dried by the drying processing unit 17, and outputs a signal related to the weight of the wafer W to the control device 4.

[Summary of the washing processing unit 16]
Next, the cleaning processing unit 16 will be described with reference to FIG. 3. FIG. 3 is a cross-sectional view showing a schematic configuration of the washing processing unit 16. The cleaning processing unit 16 is configured, for example, to form a one-piece cleaning processing unit 16 that cleans one wafer of the wafer W by rotation.

The cleaning processing unit 16 includes a wafer holding mechanism 25, a nozzle arm 26, and an infrared sensor 27.

The wafer holding mechanism 25 includes a lifter 28 and a wafer holding portion 29 . The wafer holding mechanism 25 is disposed in the chamber 23 outside the processing space, and the wafer W is held substantially horizontal by the wafer holding portion 29, and is rotated about the vertical axis to rotate the wafer W.

The lifter 28 is provided with a plurality of lift pins 28a, a lower end that connects the lift pins 28a, a support portion 28b that supports the lift pins 28a, and a load unit 28c that is disposed below the support portion 28b.

The lift pin 28a expands and contracts in the vertical direction by a telescopic drive unit (not shown). The lift pins 28a are used to receive the wafer W between the upper receiving position and the substrate transfer device 18. Further, the lift pins 28a are used to carry out the wafer W between the lower transfer position and the wafer holding portion 29. The lift pins 28a abut against the underside of the wafer W to support the wafer W. The lift pins 28a are separated from the lower surface of the wafer W when the wafer W is held in the wafer holding portion 29 and further contracted.

The load unit 28c measures the weight of the wafer W in a state where the wafer W is supported by the lift pins 28a. The load unit 28c measures the weight before the wafer W is subjected to the cleaning process and the weight of the wafer W after the wafer W is cleaned. The load unit 28c outputs a signal related to the weight of the wafer W to the control device 4.

In addition, even if the lift pin 28a is a rod-shaped member which does not expand and contract. In this case, in the lift pin 28, the lift pin 28a, the support portion 28b, and the load unit 28c are integrated and moved in the vertical direction.

The wafer holding portion 29 holds the wafer W substantially horizontal. The wafer holding mechanism 25 rotates the wafer W by rotating around the vertical axis while the wafer W is held by the wafer holding unit 29.

The infrared sensor 27 measures the temperature of the wafer W after the cleaning process is completed, and outputs a signal related to the temperature of the wafer W to the control device 4. The infrared sensor 27 measures the temperature of the wafer W while the wafer W is held by the wafer holding portion 29. Further, even if the infrared sensor 27 is in a state where the wafer W is supported by the lift pins 28a, the temperature of the wafer W may be measured.

Furthermore, even if the infrared sensor 27 is provided in plural. For example, even in a case where the temperature of the entire area of the wafer W cannot be detected by one infrared ray sensor 27, by providing the plurality of infrared ray sensors 27, the temperature of the entire area of the wafer W can be detected.

The nozzle arm 26 enters above the rotating wafer W, and supplies the chemical liquid, the rinse liquid, the acidic chemical liquid, and the IPA from the chemical liquid nozzle 26a provided at the front end of the nozzle arm 26 in advance, in order. The cleaning process of the surface of the wafer W. Even if the nozzle arm 26 is provided in plural. Further, the nozzle arm 26 is configured to measure the temperature of the wafer W by the infrared ray sensor 27, and is retracted so as not to interfere with the measurement by the infrared ray sensor 27.

Further, the cleaning processing unit 16 also forms a chemical liquid supply path 25a inside the wafer holding mechanism 25. Then, the back surface of the wafer W is washed by the chemical liquid or the rinse liquid supplied from the chemical liquid supply path 25a.

The cleaning process of the wafer W is performed by, for example, first removing the particulate or organic contaminant by an alkaline chemical solution, that is, a SC1 liquid (a mixture of ammonia and hydrogen peroxide water), followed by a rinse solution. That is, DeIonized Water (hereinafter, referred to as DIW) is rinsed. Next, the natural oxide film is removed by an acidic chemical solution (Diluted HydroFluoric acid: hereinafter referred to as DHF), and then rinsed by DIW.

The above various chemical liquids are caught by the outer chamber 23 or the inner cup 24 disposed in the outer chamber 23, from the liquid discharge port 23a provided at the bottom of the outer chamber 23, or the row disposed at the bottom of the inner cup 24. The liquid port 24a is discharged. Further, the atmosphere in the outer chamber 23 is exhausted from the exhaust port 23b provided at the bottom of the outer chamber 23.

After the rinsing process of the wafer W, the wafer holding mechanism 25 is rotated, and an IPA (hereinafter referred to as "IPA liquid") is supplied to the surface and the back surface of the wafer W, and the residual wafer is present. DIW replacement on both sides of W. Thereafter, the rotation of the wafer holding mechanism 25 is gently stopped. As a result, the liquid film L is formed on the surface of the wafer W by the IPA liquid (see FIGS. 7A and 7B). The liquid film L is formed to cover the entire pattern of the wafer W.

In the state in which the wafer W that has been subjected to the cleaning process is in a state in which the liquid film L of the IPA liquid is formed on the surface, the wafer transfer device 18 is taken up by the lifter 28 and is carried out from the cleaning processing unit 16.

The IPA liquid contained in the surface of the wafer W is prevented from being transported by the wafer W from the cleaning processing unit 16 to the drying processing unit 17 or to the drying processing unit 17 When the liquid evaporates (vaporizes) and the pattern collapses, it functions as a liquid for preventing drying.

The cleaning process in the cleaning processing unit 16 is completed, and the wafer W of the liquid film L of the surface liquid IPA liquid is transported to the drying processing unit 17. Further, by dissolving the IPA liquid in the supercritical state, that is, the CO ₂ treatment fluid (hereinafter, also referred to as "supercritical fluid") on the surface of the wafer W in the drying treatment unit 17, the IPA liquid is dissolved. The supercritical fluid is removed and the wafer W is dried.

[Summary of Drying Processing Unit 17]
Next, the configuration of the drying processing unit 17 will be described with reference to Fig. 4 . FIG. 4 is a perspective view showing the appearance of the drying processing unit 17.

The drying processing unit 17 has a body 31, a holding plate 32, a cover member 33, and a lifter 39. The body portion 31 of the frame body is formed with an opening portion 34 for carrying in and out the wafer W. The holding plate 32 holds the wafer W to be processed in the horizontal direction. The cover member 33 supports the holding plate 32, and when the wafer W is carried into the body 31, the opening portion 34 is sealed.

The main body 31 has a container in which a processing space for accommodating the wafer W is formed, and supply ports 35A and 35B and a discharge port 36 are provided in the wall portion. The supply port 35A is connected to a supply line 35C that supplies a supercritical fluid into the processing space. The supply port 35B is connected to a supply line 35D that supplies a supercritical fluid into the processing space. The discharge port 36 is connected to a discharge line 36A that discharges supercritical fluid from the processing space.

The supply body 35A is connected to the side surface of the frame-shaped body 31 on the side opposite to the opening 34. Further, the supply port 35B is connected to the bottom surface of the body 31. Further, the discharge port 36 is connected to the lower side of the opening portion 34. In addition, although two supply ports 35A, 35B and one discharge port 36 are illustrated in FIG. 4, the number of the supply ports 35A, 35B or the discharge port 36 is not particularly limited.

Further, fluid supply headers 37A, 37B and a fluid discharge header 38 are provided inside the body 31. Both the fluid supply headers 37A, 37B and the fluid discharge header 38 form a plurality of openings.

The fluid supply header 37A is connected to the supply port 35A, and is disposed adjacent to the side opposite to the opening 34 in the frame-like body 31. Further, a plurality of openings formed in the fluid supply header 37A face the opening portion 34 side.

The fluid supply header 37B is connected to the supply port 35B, and is provided at a central portion of the bottom surface inside the frame-shaped body 31. Further, a plurality of openings formed in the fluid supply header 37B are directed upward.

The fluid discharge header 38 is connected to the discharge port 36, and is disposed inside the frame-like main body 31 so as to be adjacent to the side surface of the opening portion 34 side and below the opening portion 34. Further, a plurality of openings formed in the fluid supply header 38 are directed toward the fluid supply header 37A.

The fluid supply headers 37A, 37B supply a supercritical fluid to the body 31. Further, the fluid discharge header 38 guides the supercritical fluid in the body 31 to the outside of the body 31 for discharge. Further, the supercritical fluid discharged to the outside of the body 31 via the fluid discharge header 38 includes an IPA liquid which is dissolved from the surface of the wafer W to the supercritical fluid.

The lifter 39 is provided with a plurality of lift pins 39a, and a support portion 39b that supports the lower end of the lift pins 39a and supports the receiving member. The lift pin 39 is raised and lowered by a lift drive unit (not shown).

The lifter 39 is raised and lowered between the receiving position where the wafer W is received between the substrate transfer device 18 and the standby position. The standby position is a position at which the lower side of the cover member 33 can be opened and closed.

The lifter 39 is attached to the substrate transfer device 18 from the substrate transfer device 18 at the receiving position shown in FIG. 5A. The lifter 39 supports the underside of the wafer W by the lift pins 39a. The lifter 39 is placed on the holding plate 32 by descending to the standby position shown in FIG. 5B while the wafer W is supported by the lift pins 39a. Fig. 5A is a schematic cross-sectional view showing a part of the drying processing unit 17 at the receiving position. Fig. 5B is a schematic cross-sectional view showing a part of the drying processing unit 17 at the standby position.

Further, after the drying process is completed, the lifter 39 is lifted from the standby position shown in FIG. 5B, whereby the lower surface of the wafer W is supported by the lift pins 39a, and the wafer W is taken up from the holding plate 32. The lifter 39 is lifted to the receiving position shown in FIG. 5A in a state where the lifter 39a supports the lower surface of the wafer W, and the wafer W is taken up to the substrate transfer device 18. The lift pin 39a is provided to be insertable into the insertion hole 32a of the holding plate 32.

The drying processing unit 17 further includes a pressing mechanism (not shown). Such a pressing mechanism has a function of blocking the lid member 33 against the body 31 by the internal pressure generated by the supercritical fluid supplied to the supercritical state in the processing space inside the body 31, and sealing the processing space. Further, a heat insulator or a strip heater may be provided on the surface of the body 31 so that the supercritical fluid supplied to the processing space is maintained at a specific temperature.

The wafer W that has been dried by the drying processing unit 17 is transported to the receiving unit 14 by the substrate transfer device 18.

[Configuration of Control Device 4]
Next, the configuration of the control device 4 will be described with reference to Fig. 6 . Fig. 6 is a schematic block diagram of a control device 4 according to the first embodiment.

The control device 4 is, for example, a computer, and includes a control unit 19 and a storage unit 20.

The control unit 19 includes a microcomputer or various circuits including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input/output port, and the like. The CPU of such a microcomputer realizes the transport unit 12 (see FIG. 1), the transport unit 15 (see FIG. 1), the cleaning processing unit 16, the drying processing unit 17, and the like by reading and executing the program stored in the ROM. control.

Further, such a program is recorded on a computer-readable memory medium, even if it is stored in the memory unit 20 of the control device 4 from its memory medium. For computer-readable memory media, for example, a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

The memory unit 20 is realized by a semiconductor memory element such as a RAM or a flash memory, or a memory device such as a hard disk or a compact disk. The memory unit 20 memorizes the weight of the wafer W measured by the load cells 28c and 43.

The control unit 19 includes a liquid amount detecting unit 19A, a covering state detecting unit 19B, a determining unit 19C, a signal generating unit 19D, and an output unit 19E. The control unit 19 receives a signal related to the weight of the wafer W from the load units 28c and 43. The control unit 19 receives a signal related to the temperature of the wafer W from the infrared sensor 27. Furthermore, the control unit 19 outputs signals for controlling the cleaning processing unit 16, the drying processing unit 17, and the like.

The liquid amount detecting unit 19A detects the liquid amount of the liquid film L of the IPA liquid formed on the wafer W by the cleaning process (hereinafter referred to as "liquid amount of the liquid film L"). Specifically, the liquid amount detecting unit 19A calculates the difference between the weight of the wafer W after the cleaning process measured by the load unit 28c and the weight of the wafer W before the cleaning process measured by the load unit 28c. The amount of liquid formed in the liquid film L of the wafer W is detected based on the calculated difference.

Further, the liquid amount detecting unit 19A detects the dry state of the wafer W after the drying process. Specifically, the liquid amount detecting unit 19A calculates the difference between the weight of the wafer W after the drying process measured by the load unit 43 and the weight of the wafer W before the cleaning process measured by the load unit 28c, The calculated difference is used to detect the dry state of the wafer W.

The coverage state detecting unit 19B detects the state of coverage of the wafer W in which the liquid film L of the IPA liquid is formed. Specifically, the coverage state detecting unit 19B detects the temperature distribution from the temperature of the wafer W measured by the infrared sensor 27. Further, the coverage state detecting unit 19B detects the coverage state based on the temperature distribution.

When the temperature of the wafer W forming the liquid film L is measured, there is a difference in temperature between the liquid film L and the liquid film L. This is because the wafer W penetrates the infrared ray, and at the point where the liquid film L is absent, the temperature of the member on the lower side of the wafer W, for example, the wafer holding mechanism 25 is measured.

For example, in the case where the liquid film L is appropriately formed on the wafer W, the temperature of the liquid film L is measured in a specific region set in advance by the wafer W as indicated by hatching in FIG. 7A. FIG. 7A is a schematic view showing a state in which the defective portion Wa (see FIG. 7B) is not generated in the liquid film L of the IPA liquid. A specific area is an area containing all of the patterned areas.

Further, in the wafer W, the liquid film L is not formed properly, and as shown in FIG. 7B, the defective portion Wa of the liquid film L is not formed in the specific region, and the defective portion Wa, for example, the wafer holding mechanism 25 The temperature is measured. Fig. 7B is a schematic view showing a state in which the defective portion Wa occurs in the liquid film L of the IPA liquid.

In this manner, the coverage state detecting unit 19B detects the state of coverage of the wafer W based on the temperature distribution of the wafer W measured by the infrared sensor 27.

The determining unit 19C determines whether or not the liquid amount of the liquid film L formed on the wafer W is normal. Specifically, the determination unit 19C determines whether or not the liquid amount of the liquid film L is within the first specific range. The first specific range is a range set in advance, and the wafer W after the drying process does not cause a pattern collapse of the defective wafer or a range of fine particles. The determination unit 19C determines that the liquid amount of the liquid film L is normal when the liquid amount of the liquid film L is within the first specific range. In the determination unit 19C, when the liquid amount of the liquid film L is outside the first specific range, it is determined that the liquid amount of the liquid film L is abnormal.

Furthermore, the determination unit 19C determines whether or not the dry state of the wafer W is normal. Specifically, the determination unit 19C determines whether or not the difference between the weight of the wafer W after the drying process and the weight of the wafer W before the cleaning process is within the second specific range. The second specific range is a range set in advance, and is a value that can be determined to be dry for the wafer W. When the determination unit 19C is in the second specific range, the wafer W is dried and it is determined that the dry state is normal. When the determination unit 19C is out of the second specific range, the wafer W is not dried, and it is determined that the dry state is abnormal.

Furthermore, the determination unit 19C determines whether or not the coverage state of the wafer W is normal. Specifically, the determination unit 19C determines whether or not the defective portion Wa is present in the specific region. The determination unit 19C determines that the coverage state of the wafer W is normal in the case where the defective portion Wa is not present in the specific region. The determination unit 19C determines that the defective portion Wa is present in the specific region, and determines that the coverage state of the wafer W is abnormal.

The signal generating unit 19D generates a signal for adjusting the liquid film L of the wafer W to the cleaning processing unit 16 when the liquid amount of the liquid film L is abnormal or the covering state is abnormal. For example, the signal generating unit 19D generates a signal for re-supplying the IPA liquid.

Further, in the subsequent cleaning process, the signal generating unit 19D may generate a signal for adjusting the supply amount of the IPA liquid even if the liquid amount of the liquid film L or the covering state is normal. For example, when the liquid amount of the liquid film L is small, the signal generating unit 19D generates a signal for increasing the liquid amount of the IPA liquid supplied to the wafer W so that the liquid amount of the liquid film L becomes within the first specific range. According to this, in the subsequent washing process, the liquid amount or the covering state of the liquid film L can be made normal, and the substrate processing can be performed efficiently.

The signal generating unit 19D returns the wafer W to the cleaning processing unit 16 when the dry state of the wafer W is abnormal, and generates a signal for reprocessing from the cleaning process. Further, in the subsequent drying process, the signal generating unit 19D may generate a signal for adjusting the drying process even if the dry state of the wafer W is normal. The signal generating unit 19D generates, for example, a signal for increasing the drying process.

The output unit 19E outputs the signal generated by the signal generating unit 19D to the cleaning processing unit 16, the drying processing unit 17, and the like.

[Substrate processing]
Next, the substrate processing relating to the first embodiment will be described with reference to FIG. 8. Fig. 8 is a flow chart for explaining the substrate processing in the first embodiment.

The substrate processing system 1 performs the first conveyance processing (S10). The substrate processing system 1 uses the substrate transfer device 13 and the substrate transfer device 18 to transport the wafer W from the carrier C to the cleaning processing unit 16 via the receiving unit 14 . The substrate processing system 1 mounts the wafer W on the lift pins 28a of the lifter 28.

The substrate processing system 1 measures the weight of the wafer W before the liquid film L of the IPA liquid is formed using the load unit 28c (S11).

The substrate processing system 1 performs a cleaning process (S12). The substrate processing system 1 measures the weight of the wafer W before the formation of the liquid film L of the IPA liquid, and then the wafer W is taken from the lift pin 28a to the wafer holding portion 29, and the wafer holding portion 29 holds the wafer W. . The substrate processing system 1 is rinsed after removing contaminants. Further, the substrate processing system 1 supplies the IPA liquid at a set time and flow rate, and forms a liquid film L of the IPA liquid on the surface of the wafer W.

The substrate processing system 1 detects the coverage state (S13). The substrate processing system 1 measures the temperature of the wafer W using the infrared sensor 27, and detects the coverage state based on the temperature distribution of the wafer W.

The substrate processing system 1 determines whether or not the coverage state is normal (S14). When the substrate processing system 1 is in a normal state (S14: Yes), the weight of the wafer W forming the liquid film L of the IPA liquid is measured using the load unit 28c (S15). In the substrate processing system 1, the wafer W is taken up from the wafer holding portion 29 to the lift pins 28a, the wafer W is supported by the lift pins 28a, and the weight of the wafer W forming the liquid film L of the IPA liquid is measured.

The substrate processing system 1 determines whether or not the liquid amount of the liquid film L is normal (S16). The substrate processing system 1 adjusts the liquid film L of the IPA liquid formed on the wafer W when the covering state is abnormal (S14: No) or when the liquid amount of the liquid film L is abnormal (S16; No). S17). The substrate processing system 1 detects the coverage state after performing the adjustment of the liquid film L of the IPA liquid (S13).

The substrate processing system 1 is in a case where the liquid amount of the liquid film L is normal (S16; Yes), and the second transport processing is performed (S18). The substrate processing system 1 transports the wafer W from the cleaning processing unit 16 to the drying processing unit 17 using the substrate transfer device 18, and carries the wafer W to the drying processing unit 17.

The substrate processing system 1 performs a drying process (S19), and after the drying process, performs a third conveyance process (S20). In the substrate processing system 1 , the wafer W is transported from the drying processing unit 17 to the receiving unit 14 using the substrate transfer device 18 , and the wafer W is carried into the receiving unit 14 .

The substrate processing system 1 measures the weight of the wafer W after the drying process using the load unit 43 (S21).

The substrate processing system 1 determines whether or not the liquid amount in the dry state of the wafer W is normal (S22). The substrate processing system 1 is in a state where the dry state of the wafer W is abnormal (S22; No), and the cleaning process is performed again (S12). The substrate processing system 1 transports the wafer W from the receiving unit 14 to the cleaning processing unit 16 using the substrate transfer device 18, and forms a liquid film L of IPA liquid on the surface of the wafer W.

The substrate processing system 1 performs the fourth conveyance process (S23) when the dry state of the wafer W is normal (S22; Yes). The substrate processing system 1 transports the wafer W from the receiving unit 14 to the carrier C using the substrate transfer device 13 .

In the substrate processing system 1 , the liquid amount detecting unit 19A detects the liquid amount of the liquid film L formed on the wafer W, and the covering state detecting unit 19B detects the state of the wafer W in which the liquid film L of the IPA liquid is formed. Accordingly, the substrate processing system 1 can detect whether or not the liquid film L of the IPA liquid is appropriately formed on the wafer W, and the yield of the wafer W after the drying process can be improved.

The substrate processing system 1 measures the weight of the wafer W after forming the liquid film L of the IPA liquid using the same load cell 28c, and detects the liquid amount of the liquid film L based on the measured weight. According to this, when the liquid amount of the liquid film L is detected using different load cells, the influence of the measurement error in the load cell can be suppressed, and the liquid amount of the liquid film L can be accurately detected.

The substrate processing system 1 performs a drying process on the wafer W on which the liquid film L of the IPA liquid is formed. Specifically, the substrate processing system 1 performs a drying process in a case where the covering state of the wafer W is normal and the liquid amount of the liquid film L is normal. Accordingly, the substrate processing system 1 can suppress the occurrence of pattern collapse of the wafer W after the drying process, and suppress the occurrence of particles of the wafer W after the drying process, thereby improving the yield of the wafer W.

The substrate processing system 1 detects the liquid amount of the liquid film L before the wafer W is transported to the drying processing unit 17, specifically, the wafer W is provided in the cleaning processing unit 16. Accordingly, in the substrate processing system 1 when the liquid amount of the liquid film L is abnormal, the liquid processing film L of the IPA liquid can be adjusted in the cleaning processing unit 16. Therefore, the substrate processing system 1 can perform the adjustment of the liquid film L of the IPA liquid without transporting the wafer W from the cleaning processing unit 16, and the adjustment time can be shortened.

The substrate processing system 1 detects the state of the wafer W before the wafer W is transported to the drying processing unit 17, specifically, the wafer W is placed in the cleaning processing unit 16. Accordingly, the substrate processing system 1 can adjust the liquid film L of the IPA liquid in the cleaning processing unit 16 when the coverage state of the wafer W is abnormal. Therefore, the substrate processing system 1 can perform the adjustment of the liquid film L of the IPA liquid without transporting the wafer W from the cleaning processing unit 16, and the adjustment time can be shortened.

The substrate processing system 1 detects the coverage state of the wafer W using the infrared sensor 27. According to this, when the defective portion Wa is generated in the liquid film L of the IPA liquid, the occurrence of the defective portion Wa can be accurately detected.

(Second embodiment)
[Summary of Substrate Processing System 1]
Next, the substrate processing system 1 according to the second embodiment will be described with reference to FIG. 9. Fig. 9 is a schematic view showing a schematic configuration of a substrate processing system 1 according to a second embodiment. Here, the difference in the substrate processing system 1 relating to the embodiment of the ground 1 will be described, and the description of the configuration similar to that of the first embodiment will be omitted.

The substrate processing system 1 includes an adjustment unit 50 that adjusts the liquid film L of the IPA liquid. The adjusting unit 50 adjusts the liquid film L of the IPA liquid in a case where the liquid amount of the liquid film L is abnormal or the covering state is abnormal.

The adjustment unit 50 is provided adjacent to the conveyance unit 15 and configured to convey the wafer W by the substrate transfer device 18.

The load unit 43 (see FIG. 2) provided in the receiving unit 14 measures the weight of the wafer W transported from the carrier C. That is, the load unit 43 measures the weight of the wafer W before the cleaning process.

Further, the cleaning processing unit 16 of the substrate processing system 1 according to the second embodiment does not include the load unit 28c and the infrared sensor 27 with respect to the cleaning processing unit 16 according to the first embodiment.

[Summary of Drying Processing Unit 17]

As shown in FIG. 10A, the drying processing unit 17 further includes a load unit 39c and an infrared sensor 60. Fig. 10A is a schematic cross-sectional view showing a part of a drying processing unit 17 according to a second embodiment.

The load unit 39c is disposed under the support portion 39b of the lifter 39, and as shown in Fig. 10A, the wafer W is supported by the lift pin 39a to measure the weight of the wafer W. The load unit 39c measures the weight of the wafer W on which the liquid film L of the IPA liquid is formed, and the weight of the wafer W after the drying process.

The infrared sensor 60 is attached to the upper side of the body 31 via the support arm 61. As shown in FIG. 10B, the infrared sensor 60 measures the temperature of the wafer W while the wafer W is placed on the holding plate 32. FIG. 10B is a schematic cross-sectional view showing the drying processing unit 17 in a state where the wafer W is placed on the holding plate 32.

[Summary of Control Device 4]
As shown in FIG. 11, the control unit 19 of the control device 4 receives a signal related to the weight of the wafer W from the load cells 39c and 43. Further, the control unit 19 receives a signal related to the temperature of the wafer W from the infrared sensor 60. Fig. 11 is a schematic block diagram of a control device 4 according to a second embodiment.

The liquid amount detecting unit 19A calculates the difference between the weight of the wafer W after the cleaning process measured by the load unit 39c and the weight of the wafer W before the cleaning process measured by the load unit 43, and the detection is formed in The amount of liquid film L of the wafer W.

Further, the liquid amount detecting unit 19A calculates the difference between the weight of the wafer W after the drying process measured by the load unit 39c and the weight of the wafer W before the cleaning process measured by the load unit 43 to detect the crystal. The dry state of the circle W.

The substrate processing system 1 according to the second embodiment is formed by forming a liquid film L of an IPA liquid, and after the wafer W is transported to the drying processing unit 17 by the substrate transfer device 18, the liquid amount and coverage of the liquid film L are measured. status.

Next, the substrate processing relating to the second embodiment will be described with reference to FIG. Fig. 12 is a flow chart for explaining substrate processing in accordance with the second embodiment.

The substrate processing system 1 performs the first conveyance processing (S30). The substrate processing system 1 transports the wafer W from the carrier C to the receiving unit 14 by using the substrate transfer device 13 .

The substrate processing system 1 uses the load unit 43 to measure the weight of the wafer W before the liquid film L of the IPA liquid is formed before the cleaning process (S31).

The substrate processing system 1 performs the second conveyance process (S32). The substrate processing system 1 transports the wafer W from the receiving unit 14 to the cleaning processing unit 16 using the substrate transfer device 18 .

The substrate processing system 1 performs a cleaning process (S33). The substrate processing system 1 is rinsed after removing contaminants. Further, the substrate processing system 1 supplies an IPA liquid to the wafer W, and forms a liquid film L of the IPA liquid on the surface of the wafer W.

The substrate processing system 1 performs a third conveyance process (S34). The substrate processing system 1 transports the wafer W from the cleaning processing unit 16 to the drying processing unit 17 using the substrate transfer device 18 . The substrate processing system 1 receives the wafer W from the substrate transfer device 18 to the lift pins 39a of the lifter 39.

The substrate processing system 1 measures the weight of the wafer W forming the liquid film L of the IPA liquid using the load unit 39c (S35).

The substrate processing system 1 determines whether or not the liquid amount of the liquid film L is normal (S36). The substrate processing system 1 is in a case where the liquid amount of the liquid film L is normal (S36; Yes), and the coverage state is detected (S37). The substrate processing system 1 measures the temperature of the wafer W using the infrared sensor 60, and detects the coverage state based on the temperature distribution of the wafer W.

The substrate processing system 1 determines whether or not the coverage state is normal (S38). When the substrate processing system 1 is in the covered state (S38; Yes), the drying process is performed (S39).

The substrate processing system 1 is in the case where the liquid amount of the IPA liquid is abnormal (S36; No), or the case where the covering state is abnormal (S38; No), the wafer W is transported to the adjusting unit 50, and the adjustment is formed in the crystal. Liquid film L (S40) of IPA liquid of circle W. The substrate processing system 1 transports the wafer W whose adjustment has been completed to the drying processing unit 17, and measures the weight of the wafer W (S35).

After the substrate processing system 1 is dried, the weight of the wafer W after the drying process is measured by the load unit 39c (S41).

The substrate processing system 1 determines whether the dry state is normal (S42). The substrate processing system 1 is in a state where the dry state of the wafer W is abnormal (S42; No), and the cleaning process is performed again (S33).

The substrate processing system 1 performs the fourth conveyance process (S43) when the dry state of the wafer W is normal (S42; Yes). The substrate processing system 1 transports the wafer W to the receiving unit 14 using the substrate transfer device 18, and transports the wafer W from the receiving unit 14 to the carrier C using the substrate transfer device 13.

The substrate processing system 1 detects the liquid amount of the liquid film L after the wafer W on which the liquid film L of the IPA liquid is formed is transported to the drying processing unit 17. According to this, the substrate processing system 1 can detect the amount of the liquid film L before the drying process is to be performed. Therefore, for example, when the wafer W is transported to the drying processing unit 17 by the substrate transfer device 18, the IPA liquid overflows, or the IPA liquid is volatilized, and the liquid amount of the liquid film L is small. The case of drying treatment. Therefore, the substrate processing system 1 can suppress the occurrence of pattern collapse.

The substrate processing system 1 detects the state of coverage of the wafer W after the wafer W on which the liquid film L of the IPA liquid is formed is transported to the drying processing unit 17. Accordingly, the substrate processing system 1 can detect the state of coverage of the wafer W before the drying process is to be performed. Therefore, for example, it is possible to prevent the IPA liquid from overflowing during the conveyance of the wafer W to the drying processing unit 17 by the substrate transfer device 18, or the case where the IPA liquid is volatilized, and the defective portion Wa is generated in the liquid film L of the IPA liquid. The state of the drying process is carried out in the state of (refer to FIG. 7B). Therefore, the substrate processing system 1 can suppress the occurrence of pattern collapse.

(third embodiment)
Next, the substrate processing system 1 according to the third embodiment will be described. Here, the difference from the substrate processing system 1 according to the second embodiment will be mainly described, and the description of the same configuration of the substrate processing system 1 according to the second embodiment will be omitted. The substrate processing system 1 according to the third embodiment uses the imaging device 72 instead of the infrared sensor 60 to detect the state of coverage of the wafer W in which the liquid film L of the IPA liquid is formed.

[Summary of Drying Processing Unit 17]
As shown in FIGS. 13 and 14, the drying processing unit 17 further includes a laser irradiation unit 70, a screen 71, and an imaging device 72. Fig. 13 is a schematic plan view of the drying processing unit 17 according to the third embodiment. Fig. 14 is a schematic cross-sectional view showing a part of the drying processing unit 17 in the section XIV-XIV of Fig. 13;

The laser irradiation unit 70 forms the liquid film L of the IPA liquid, and irradiates the laser light toward the wafer W held by the holding plate 32. The laser irradiation unit 70 irradiates a plurality of laser beams toward the wafer W. The laser irradiation unit 70 illuminates the laser light from the wafer W held by the holding plate 32 from obliquely upward.

The screen 71 is disposed to face the laser irradiation unit 70 with the wafer W held by the holding plate 32 interposed therebetween. On the screen 71, reflected light of the laser light reflected by the wafer W and the holding plate 32 is projected.

The imaging device 72 is disposed, for example, above the laser irradiation unit 70. The imaging device 72 is, for example, a digital camera, and the image is projected onto the reflected light of the screen 71. The image data of the reflected light photographed by the imaging device 72 is sent to the control device 4.

The laser irradiation unit 70, the imaging device 72, and the screen 71 are arranged in parallel along the X-axis direction. Further, the positions of the laser irradiation unit 70, the imaging device 72, and the screen 71 are not limited thereto, and the laser irradiation unit 70, the imaging device 72, and the screen 71 may be disposed, for example, along the Y-axis direction.

In the drying processing unit 17, the wafer W on which the liquid film L of the IPA liquid is formed is placed on the holding plate 32 by the lifter 39 (see FIG. 10A or the like), and the laser light is irradiated from the laser irradiation unit 70 toward the wafer W. Further, the drying processing unit 17 photographs the reflected light projected on the screen 71 by the imaging device 72.

Further, even if the drying processing unit 17 irradiates the wafer W supported by the lifter 39 with laser light, the reflected light may be photographed.

When the laser light of the liquid film L forming the IPA liquid is irradiated with the laser light obliquely upward, the laser light is refracted at the boundary between the IPA liquid and the air, and is reflected by the wafer W. Further, the reflected light is emitted from the IPA liquid as indicated by a solid line in FIG. Fig. 15 is a view showing a state of reflection of laser light in the wafer W in which the liquid film L of the IPA liquid is formed.

The laser light incident on the edge portion L1 of the liquid film L of the IPA liquid is different from the laser light incident on the center side of the wafer W from the edge portion L1, and the optical conditions such as the incident angle or the refraction angle are different. . Therefore, for example, the laser light incident from the edge portion L1 of the liquid film L of the IPA liquid on the side of the laser irradiation portion 70 is as shown by a broken line in Fig. 15, and is in the interface of the liquid film L and the air of the IPA liquid. reflection.

In this way, the reflected light of the laser light incident from the edge portion L1 of the liquid film L of the IPA liquid is expressed by the reflected light of the laser light incident on the center side of the wafer W from the edge portion L1. Different actions. Therefore, the reflected light projected on the screen 71 causes a region where the intensity of the light is small and a region where the reflected light is disturbed (hereinafter referred to as a "disordered region") in response to the edge portion L1 of the liquid film L of the IPA liquid.

For example, in the case where the defective portion Wa does not occur in the liquid film L of the IPA liquid, the screen 71, as indicated by a dot in Fig. 16A, projects a slightly elliptical shape in response to the edge portion L1 of the liquid film L of the circular IPA liquid. Disordered area. Fig. 16B is a schematic view showing reflected light in a state where the defective portion Wa is not generated in the liquid film L of the IPA liquid. Further, in Fig. 16A, the reflected light on the center side of the edge portion L1 of the liquid film L of the IPA liquid is indicated by a dotted line, and the reflected light reflected by the holding plate 32 is indicated by a solid line.

On the other hand, when the defective portion Wa occurs in the liquid film L of the IPA liquid, the disordered region does not have a slightly elliptical shape, and as shown by a circle in FIG. 16B, a disordered region corresponding to the uneven portion of the defective portion Wa appears. Fig. 16B is a schematic view showing reflected light in a state where the liquid film L of the IPA liquid has a defective portion Wa. In addition, in FIG. 16B, the turbulent area is indicated by a dot, and the reflected light on the center side of the edge portion L1 of the liquid film L of the IPA liquid is indicated by a dotted line, and the holding plate 32 or the wafer W is indicated by a solid line. Reflected light reflected.

In this manner, the wafer W that forms the liquid film L of the IPA liquid is irradiated with the laser light, and the reflected light projected on the screen 71 by the photographing can detect the presence or absence of the defective portion Wa.

[Configuration of Control Device 4]
As shown in FIG. 17, the control unit 19 of the control device 4 receives image data obtained by capturing the reflected light from the imaging device 72. Fig. 17 is a schematic block diagram of a control device 4 according to a third embodiment.

The coverage state detecting unit 19B detects the state of coverage of the wafer W based on the image data of the reflected light obtained by the imaging device 72. Specifically, the coverage state detecting unit 19B compares the image data of the reflected light that is captured in the state in which the liquid film L of the IPA liquid is not generated, and the image data of the reflected light that is imaged in the current process, and detects The coverage state of the wafer W. In addition, the image data of the reflected light that is photographed in the state where the defective portion Wa is not generated in the liquid film L of the IPA liquid is previously stored in the memory unit 20.

The determination unit 19C determines whether or not the coverage state of the wafer W is normal. Specifically, the determination unit 19C determines whether or not the defective portion Wa is present in the specific region based on the detection result by the coverage state detecting unit 19B.

[Substrate processing]
The substrate processing according to the third embodiment will be described with reference to the flowchart of FIG. 12, and the substrate processing according to the second embodiment will be described, and the same processing as the substrate processing according to the second embodiment will be omitted. Description of the process.

In the substrate processing according to the third embodiment, the substrate processing system 1 detects the coverage state (S37), and detects the coverage state based on the image data of the reflected light obtained by the imaging device 72.

The substrate processing system 1 irradiates the wafer W that forms the liquid film L of the IPA liquid with the laser light by the laser irradiation unit 70, and the image pickup device 72 captures the reflected light that is projected on the screen 71. Further, the substrate processing system 1 detects the state of coverage of the wafer W based on the image data of the reflected light obtained.

According to this, in the case where the substrate processing system 1 generates the defective portion Wa in the liquid film L of the IPA liquid, the occurrence of the defective portion Wa can be accurately detected. In addition, the substrate processing system 1 can suppress the occurrence of the defective portion Wa in the liquid film L of the IPA liquid, and perform the drying process. Therefore, the substrate processing system 1 can suppress the occurrence of pattern collapse.

(fourth embodiment)
Next, the substrate processing system 1 according to the fourth embodiment will be described. Here, the difference from the substrate processing system 1 according to the second embodiment will be mainly described, and the description of the same configuration of the substrate processing system 1 according to the second embodiment will be omitted. The substrate processing system 1 according to the fourth embodiment uses the imaging device 72 instead of the infrared sensor 60 to detect the state of coverage of the wafer W forming the liquid film L of the IPA liquid.

[Summary of Drying Processing Unit 17]
As shown in FIGS. 18 and 19, the drying processing unit 17 further includes a monochrome light irradiation unit 75 and an imaging device 72. Fig. 18 is a schematic plan view of a drying processing unit 17 according to a fourth embodiment. Fig. 19 is a schematic cross-sectional view showing a part of the drying processing unit 17 in the section XIV-XIV of Fig. 19.

The monochromatic light irradiation unit 75 is, for example, a sodium lamp. The monochromatic light irradiation unit 75 forms the liquid film L of the IPA liquid, and irradiates the monochromatic light toward the wafer W held by the holding plate 32. The monochromatic light irradiation unit 75 pairs the wafer W held by the holding plate 32 to illuminate the monochromatic light from obliquely upward.

The imaging device 72 is disposed to face the monochromatic light irradiation unit 75 with the wafer W held by the holding plate 32 interposed therebetween. The imaging device 72 photographs the wafer W that forms the liquid film L of the IPA liquid. The image data of the wafer W imaged by the imaging device 72 is sent to the control device 4.

The drying processing unit 17 carries the wafer W on which the liquid film L of the IPA liquid is formed by the lifter 39 (refer to FIG. 10A or the like) after the holding plate 32, and irradiates the single color from the monochromatic light irradiation portion 75 toward the wafer W. Light. Further, the drying processing unit 17 photographs the wafer W by the image pickup device 72.

Further, even if the drying processing unit 17 irradiates the wafer supported by the lifter 39 with monochromatic light, the wafer W may be photographed.

When the wafer W which forms the liquid film L of the IPA liquid is irradiated with monochromatic light obliquely upward, the reflected light reflected on the surface of the liquid film L of the IPA liquid, and the liquid reflected from the wafer W, the liquid from the IPA liquid The interference of the reflected light emitted from the film L generates interference fringes. The imaging device 72 captures interference fringes generated by the liquid film L of the IPA liquid.

For example, in the case where the imaging device 72 is disposed at the point E shown in FIG. 20, interference fringes occur in response to the path difference (ACD-BD). Figure 20 is a diagram illustrating the principle of occurrence of interference fringes.

In response to the optical path difference of the above-described path difference, the film thickness of the liquid film L is set to "d", the refractive index of the liquid film L is set to "n", and the refractive index of the air is set to "1.0", and the film is injected. When the angle is "θ", the optical path difference becomes "2ndcos θ".

In the case where the optical path difference satisfies the condition of the formula (1), the reflected light reflected from the surface of the liquid film L of the IPA liquid, and the reflected light emitted from the liquid film L of the IPA liquid by the reflection by the wafer W Interference, producing a bright line.

2ndcos θ=(m+1/2)λ・・・(1)

In addition, the wavelength of "λ" monochromatic light. "m" is an integer.

Further, in the case where the optical path difference satisfies the condition of the formula (2), it is emitted from the liquid film L of the IPA liquid by the reflected light reflected on the surface of the liquid film L of the IPA liquid and reflected by the wafer W. The interference of reflected light produces a dark line.

2ndcosθ=mλ・・・(2)

As a result, the optical path difference produces a dark line at an integral multiple of the wavelength λ of the monochromatic light, and an open line is generated at a position shifted from the wavelength λ of the monochromatic light by a half wavelength. Accordingly, dry stripes are generated. Further, the interference fringes are generated in accordance with the film thickness d of the IPA liquid formed on the wafer W.

Therefore, in the case where the defective portion Wa is not generated in the liquid film L of the IPA liquid, when the monochromatic light is irradiated to the IPA liquid formed on the circular wafer W, as shown by a dotted line in FIG. 21A, Produces slightly elliptical interference fringes. FIG. 21A is a schematic view showing the wafer W in a state where the defective portion Wa is not generated in the liquid film L of the IPA liquid as viewed obliquely from above.

In the case where the defective portion Wa occurs in the liquid film L of the IPA liquid, when the monochromatic light is applied to the IPA liquid formed on the circular wafer W, as indicated by a little chain line in FIG. 21B, The defective portion Wa generates a part of interference fringes that are recessed toward the center side of the wafer W. FIG. 21B is a schematic view showing the wafer W in a state in which the defective portion Wa of the liquid film L of the IPA liquid is observed obliquely from above.

In this manner, the wafer W on which the liquid film L of the IPA liquid is formed is irradiated with monochromatic light, and the presence or absence of the defective portion Wa can be detected by the interference fringes generated by the photographing.

[Configuration of Control Device 4]
The configuration of the control device 4 according to the fourth embodiment will be described with reference to the block diagram of Fig. 17, and the control device 4 according to the third embodiment will be described, and the third embodiment will be omitted. The control device 4 has the same configuration.

In the control unit 19 of the control device 4, image data acquired by capturing the wafer W is input from the imaging device 72.

The coverage state detecting unit 19B detects the state of coverage of the wafer W based on the image data of the wafer W acquired by the imaging device 72. Specifically, the coverage state detecting unit 19B compares the image data of the wafer W photographed in the state in which the liquid film L of the IPA liquid is not generated, and the image data of the wafer W photographed in the current processing. The coverage state of the wafer W is detected. In addition, the image data of the wafer W imaged in the state in which the defective portion Wa is not generated in the liquid film L of the IPA liquid is previously stored in the memory unit 20.

In the substrate processing system 1 , monochromatic light is irradiated to the wafer W on which the liquid film L of the IPA liquid is formed from the monochromatic light irradiation unit 75 such as a sodium lamp, and the wafer W is imaged by the imaging device 72 . Further, the substrate processing system 1 detects the state of coverage of the wafer W based on the acquired image data.

According to this, in the substrate processing system 1, when the defective portion Wa is generated in the liquid film L of the IPA liquid, the occurrence of the defective portion Wa can be accurately detected. In addition, the substrate processing system 1 can suppress the occurrence of the drying process by the state in which the liquid film L of the IPA liquid has a defective portion Wa. Therefore, the substrate processing system 1 can suppress the occurrence of pattern collapse.

[Modification]
In the substrate processing system 1 according to the modification, even when the liquid amount of the liquid film L is too small, or the defective portion Wa of the liquid film L of the IPA liquid is large, or the defective portion of the liquid film L of the IPA liquid occurs. In the case of a large amount of Wa, it is determined that pattern collapse occurs in the wafer W, and the wafer W may be treated as a defective wafer. For example, the substrate processing system 1 according to the modification determines the occurrence of pattern collapse by comparing with the set threshold values. According to this, it is possible to suppress the adjustment of the IPA liquid with respect to the wafer W in which the pattern collapse occurs, and the substrate processing can be performed efficiently.

In the substrate processing system 1 according to the modification, for example, when the liquid amount of the liquid film L is larger than the upper limit of the first specific range, the amount of exhaust of the supercritical fluid in the drying processing unit 17 may be increased. Accordingly, the substrate processing system 1 according to the modification can suppress the occurrence of fine particles without performing adjustment of the IPA liquid.

The substrate processing system 1 according to the modification may be provided with a load unit, an infrared sensor, or the like in the cleaning processing unit 16 and the drying processing unit 17. As a result, the substrate processing system 1 according to the modification can transport the wafer W from the cleaning processing unit 16 in a state where the liquid amount and the covering state of the liquid film L are normal. Therefore, after the wafer W is transported to the drying processing unit 17, when the liquid amount or the covering state of the liquid film L is abnormal, it can be determined that a malfunction has occurred in the cleaning processing unit 16 to the drying processing unit 17. That is, it is possible to easily identify the cause of the malfunction.

The substrate processing system 1 according to the modification may be provided with a load unit in the substrate transfer device 18. Thereby, the load unit used in the substrate processing system 1 can be reduced. Further, in the substrate processing system 1 according to the modification, even if the infrared sensor 27 or the imaging device 72 is provided in the cleaning processing unit 16, the load unit 39c may be provided in the drying processing unit 17.

In the substrate processing system 1 according to the modification, it is possible to determine whether or not the liquid amount of the liquid film L is normal by comparing the weight of the wafer W on which the liquid film L of the IPA liquid is formed and the first specific weight set in advance. Further, the substrate processing system 1 according to the modification can determine whether or not the dry state is normal by comparing the weight of the wafer W after the drying process with the second specific weight set in advance. According to this, it is possible to determine whether or not the liquid amount or the dry state of the liquid film L is normal without providing the load unit 43 in the receiving unit 14, and it is possible to reduce the load unit used in the substrate processing system 1.

The substrate processing system 1 according to the modification may measure the temperature of the wafer W by the infrared sensor 60 while the wafer W is housed in the main body 31 in the drying processing unit 17 of the second embodiment. Accordingly, even if the wafer W is placed on the holding plate 32 and the temperature of the entire area of the wafer W cannot be measured, the temperature of the entire area of the wafer W can be measured by an infrared sensor 60. .

Further, in the substrate processing system 1 according to the modification, for example, in the drying processing unit 17 of the third embodiment, the wafer W is housed in the main body 31, and the laser irradiation unit 70 is irradiated toward the wafer W by the laser irradiation unit 70. Light can also be used. In this case, as shown in FIG. 22, the laser irradiation unit 70 may be disposed on the front end of the wafer W on the main body 31 side so that one piece of laser light can be irradiated. FIG. 22 is a schematic plan view of the drying processing unit 17 of the substrate processing system 1 according to the modification.

Further, the substrate processing system 1 according to the modification is configured to continuously store the reflected light projected on the screen 71 by the imaging device 72 while the wafer W is housed in the main body 31. In the substrate processing system 1 according to the modification, the image data of the reflected light of the entire wafer W can be obtained by connecting the image data thus obtained. Accordingly, the coverage state of the wafer W can be detected using the laser irradiation portion 70 that irradiates one of the laser beams.

In addition, the substrate processing system 1 according to the modification is placed in the state of the lifter 39 (see FIG. 10A, etc.) before the wafer W on which the liquid film L of the IPA liquid is formed is placed on the holding plate 32. The image pickup device 72 may project the reflected light on the screen 71, for example.

Further, in the substrate processing system 1 according to the modification, the drying processing unit 17 of the fourth embodiment may detect the covering state in response to a change in interference fringes. Since the IPA liquid formed on the wafer W evaporates over time, the film thickness d of the liquid film L of the IPA liquid becomes thin as time passes. That is, the interference fringes which occur in response to the film thickness d of the liquid film L of the IPA liquid are the positional changes which occur when the time elapses. On the other hand, since the defective portion Wa has no IPA liquid and interference fringes do not occur, there is no change in the image even if time passes.

As described above, the substrate processing system 1 according to the modification can detect the coverage state even if the interference fringe changes. Accordingly, the substrate processing system 1 related to the deformation, for example, can detect the coverage state of the wafer W.

Further, in the substrate processing system 1 according to the modification, even if the wafer W of the liquid film L of the IPA liquid is formed by the imaging device 72, the image data obtained by the imaging may be detected to detect the state of coverage of the wafer W. Further, the substrate processing system 1 according to the modification can detect the surface state of the wafer W after the drying process by photographing the wafer W after the drying process by the imaging device such as a camera or the image data obtained by the imaging. . Accordingly, the substrate processing system 1 can more accurately determine the surface state of the wafer W after the drying process, specifically, whether or not the wafer W is sufficiently dried.

Further, in the substrate processing system 1 according to the modification, even if the wafer W of the liquid film L of the IPA liquid is formed by the camera, the image data obtained by the imaging is estimated to be the liquid film L of the liquid W on the wafer W. The amount of liquid can also be.

In the substrate processing system 1 according to the modification, when the dry state of the wafer W is abnormal, the wafer in which the dry state is abnormal may be discarded as a defective wafer. Further, in the substrate processing system 1 according to the modification, when the dry state of the wafer W is abnormal, for example, when the wafer W is not sufficiently dried, the drying process may be performed again.

Further, the method of detecting the liquid amount, the method of detecting the film state, and the method of detecting the dry state of the wafer W are not limited to the substrate processing system 1 having the drying processing unit 17 using a supercritical fluid. It can be applied to various substrate processing systems that form a liquid film of liquid on the wafer W to dry.

Further, the substrate processing system 1 according to the above-described embodiment and the configuration of the substrate processing system 1 according to the modification may be combined as appropriate.

Additional effects or variations are readily available to the practitioner. Therefore, the broader aspects of the invention are not intended to Accordingly, various modifications may be made without departing from the spirit and scope of the inventions.

1‧‧‧Substrate processing system (substrate processing device)

16‧‧‧Washing unit

17‧‧‧Drying unit (drying section)

19‧‧‧Control Department

19A‧‧‧Liquid Detection Department

19B‧‧‧ Coverage Status Detection Unit (coverage detection unit)

27‧‧‧Infrared sensor

28c‧‧‧Load unit

39c‧‧‧Load unit

43‧‧‧Load unit

60‧‧‧Infrared sensor

70‧‧‧Laser Department

71‧‧‧ screen

72‧‧‧ camera

75‧‧‧ Monochrome Light Irradiation Department

Fig. 1 is a schematic view showing a schematic configuration of a substrate processing system according to a first embodiment.

Fig. 2 is a cross-sectional view showing a schematic configuration of a receiving unit.

Fig. 3 is a cross-sectional view showing a schematic configuration of a washing processing unit.

Fig. 4 is a perspective view showing the appearance of a drying processing unit.

Fig. 5A is a schematic cross-sectional view showing a part of a drying processing unit at a receiving position.

Fig. 5B is a schematic cross-sectional view showing a part of the drying processing unit at the standby position.

Fig. 6 is a schematic block diagram of a control device according to the first embodiment.

Fig. 7A is a schematic view showing a state in which no defective portion has occurred in the liquid film of the IPA liquid.

Fig. 7B is a schematic view showing a state in which a defective portion of a liquid film of an IPA liquid is generated.

Fig. 8 is a flow chart for explaining the substrate processing in the first embodiment.

Fig. 9 is a schematic view showing a schematic configuration of a substrate processing system according to a second embodiment.

Fig. 10A is a schematic cross-sectional view showing a part of a drying processing unit according to a second embodiment.

Fig. 10B is a schematic cross-sectional view showing a drying processing unit in which a wafer is placed on a holding plate.

Fig. 11 is a schematic block diagram of a control device according to a second embodiment.

Fig. 12 is a flow chart for explaining the substrate processing in the second embodiment.

Fig. 13 is a schematic plan view of a drying processing unit according to a third embodiment.

Fig. 14 is a schematic cross-sectional view showing a part of a drying processing unit taken along the line XIV-XIV of Fig. 13;

Fig. 15 is a view showing a state of reflection of laser light in a wafer on which a liquid film of an IPA liquid is formed.

Fig. 16A is a schematic view showing reflected light in a state where no defective portion of the liquid film of the IPA liquid is generated.

Fig. 16B is a schematic view showing reflected light in a state where a liquid film of the IPA liquid is defective.

Fig. 17 is a schematic block diagram of a control device according to a third embodiment.

Fig. 18 is a schematic plan view of a drying processing unit according to a fourth embodiment.

Fig. 19 is a schematic cross-sectional view showing a part of a drying processing unit taken along the line XIX-XIX of Fig. 18.

Figure 20 is a diagram illustrating the principle of occurrence of interference fringes.

Fig. 21A is a schematic view showing the wafer in a state where no defective portion of the liquid film of the IPA liquid is observed from obliquely above.

Fig. 21B is a schematic view showing the wafer in a state where no defective portion of the liquid film of the IPA liquid is observed from obliquely above.

Fig. 22 is a schematic plan view of a drying processing unit of a substrate processing system according to a modification.

Claims (12)

A substrate processing apparatus comprising: a liquid amount detecting unit that detects a liquid amount of a liquid film formed on the substrate; and The cover detecting unit detects the covering state of the substrate by the liquid film. The substrate processing apparatus according to claim 1, wherein A drying unit that performs a drying process on the substrate on which the liquid film is formed is provided. The substrate processing apparatus according to claim 2, wherein The liquid amount detecting unit detects the liquid amount before the substrate is transported to the drying unit. The substrate processing apparatus according to claim 2 or 3, wherein The liquid amount detecting unit detects the liquid amount after the substrate is transported to the drying unit. The substrate processing apparatus according to any one of claims 1 to 3, wherein The cover detecting unit detects the covered state before the substrate is transported to the drying unit. The substrate processing apparatus according to any one of claims 1 to 3, wherein The cover detecting unit detects the above-described coverage state using an imaging device. The substrate processing apparatus according to claim 6, wherein have: a laser light irradiation unit that irradiates the substrate on which the liquid film is formed with laser light; and a screen that is projected by the above-described laser light reflected by the substrate, The imaging device captures the reflected light projected onto the screen, The coverage detecting unit detects the coverage state based on the image data acquired by the imaging device. The substrate processing apparatus according to claim 6, wherein Providing an irradiation unit that irradiates the substrate on which the liquid film is formed with monochromatic light, The image pickup device photographs the substrate irradiated with the monochromatic light, The coverage detecting unit detects the coverage state based on the image data acquired by the imaging device. The substrate processing apparatus according to any one of claims 1 to 3, wherein The cover detecting unit detects the above-described coverage state using an infrared sensor. A substrate processing method comprising: a step of detecting a state of coverage of the substrate caused by a liquid film formed on the substrate; a step of detecting a liquid amount of the liquid film in a case where the covering state is a specific state in which the liquid film covers a pattern of the substrate; and In the case where the liquid amount is within a predetermined range set in advance, the substrate is subjected to a drying treatment step. The substrate processing method of claim 10, wherein The step of adjusting the supply amount of the liquid forming the liquid film in the case where the covering state is not the above-described specific state or the liquid amount is outside the specific range. A substrate processing method comprising: a step of detecting the weight of the substrate on which a liquid film is formed on the surface of the substrate before the drying treatment; a step of detecting a covering state caused by the liquid film in the substrate before the drying treatment; a drying treatment step of performing the above drying treatment on the substrate on which the liquid film is formed; a step of detecting the weight of the substrate after the drying treatment; and The step of detecting the surface state of the substrate after the drying treatment.