TW202405893A - Substrate processing device and substrate processing method - Google Patents

Abstract

The present invention describes a substrate processing device and a substrate processing method capable of evaluating the quality of the surface state of a substrate and the state of the substrate processing device while detecting the coating state of the surface of the substrate by a process liquid. The substrate processing device executes processing which rotates a substrate by controlling a rotatable holding section, processing which supplies a process liquid to the surface of the rotating substrate by controlling a supply section, processing which detects the arrival of the process liquid at a first irradiation location based on a change in the intensity of reflected light acquired by a first optical sensor at the first irradiation location, processing which detects the arrival of the process liquid at a second irradiation location based on a change in the intensity of reflected light acquired by a second optical sensor at the second irradiation location, processing which calculates the rate of spread of the process liquid across the surface of the substrate based on the time difference between the arrival time of the process liquid at the first irradiation location and the arrival time of the process liquid at the second irradiation location, and processing which determines the suitability of the substrate processing based on the calculated rate of spread.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

It is known that there is a substrate processing system that discharges various processing liquids onto the substrate to perform substrate processing when microprocessing a substrate (for example, a semiconductor wafer) to manufacture a semiconductor element. Patent Document 1 discloses a method by comparing the threshold value with the difference between "the laser reflected light from the substrate before the coating liquid is discharged to the substrate" and "the laser reflected light from the substrate when the coating liquid is discharged to the substrate" ”, a substrate processing method to detect the discharge state of the coating liquid. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2007-258658

﹝Invent the problem you want to solve﹞

The present invention describes a substrate processing device and a substrate processing method that can detect the coating state of the surface of a substrate covered with a processing liquid and evaluate the surface state of the substrate or the state of the substrate processing device. ﹝Technical means to solve problems﹞

An example of a substrate processing apparatus, which includes: a rotation holding unit configured to hold a substrate and rotate the substrate; a supply unit configured to supply a processing liquid to the surface of the substrate; and a first photo sensor configured to face the first The irradiation point irradiates light and receives the reflected light, and the first irradiation point is arranged to overlap with the surface of the substrate held by the rotation holding part; the second photo sensor is configured to irradiate light toward the second irradiation point, and The reflected light is received, and the second irradiation point is arranged to overlap with the surface of the substrate held on the rotation holding part and is located further outside the substrate in the radial direction than the first irradiation point; and a control part. The control unit is configured to perform the following processes: a first process of controlling the rotation holding unit to rotate the substrate; a second process of controlling the supply unit to supply the processing liquid to the surface of the rotating substrate; and a second process based on the first photo sensor. The change in the intensity of the reflected light obtained at the first irradiation point is used to detect the third treatment of the treatment liquid reaching the first irradiation point; according to the change in the intensity of the reflected light obtained at the second irradiation point by the second photo sensor Change, detect the fourth process in which the treatment liquid reaches the second irradiation place; and based on the time difference between "the time point when the treatment liquid reaches the first irradiation place" and "the time point when the treatment liquid reaches the second irradiation place" , the fifth process is to calculate the diffusion rate of the treatment liquid on the surface of the substrate. ﹝Effects of invention﹞

According to the substrate processing apparatus and the substrate processing method according to the present invention, it is possible to detect the covering state of the surface of the substrate covered with the processing liquid, and to evaluate the surface state of the substrate or the state of the substrate processing apparatus.

In the following description, the same symbols are used for the same elements or elements with the same functions, and repeated explanations are omitted. In addition, in this specification, when referring to the top, bottom, right, and left of a figure, the direction of the symbol in the figure is used as a reference.

[Structure of substrate processing system] First, the substrate processing system 1 (substrate processing apparatus) configured to process the substrate W will be described with reference to FIG. 1 . The substrate processing system 1 includes a loading and unloading station 2, a processing station 3, and a controller Ctr (control unit). The loading/unloading station 2 and the processing station 3 may be arranged in a line in the horizontal direction, for example.

The substrate W may be in a disk shape, or may be in a plate shape other than a circular shape such as a polygonal shape. The substrate W may have a notch portion in which a part of the substrate W is cut out. The notch portion may be, for example, a notch (a U-shaped, V-shaped groove, etc.) or a linear portion extending linearly (so-called orientation plane). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the substrate W may be about 200 mm to 450 mm, for example.

The loading and unloading station 2 includes a placing unit 4 (acquisition unit), a loading and unloading unit 5 and a shelf unit 6 . The placement unit 4 includes a plurality of placement tables (not shown) arranged in the width direction (the up-and-down direction in FIG. 1 ). Each mounting base is configured to be capable of mounting the carrier 7 . The placement part 4 is configured to read the data on the type of the substrate W stored in the storage part 7a of the carrier 7 (which will be described in detail later) when the carrier 7 is placed on the placement part, and to store the type of the substrate W. Data is sent to the controller Ctr.

The carrier 7 is configured to accommodate at least one substrate W in a sealed state. The carrier 7 includes an opening and closing door (not shown) for taking out the inserted substrate W. The carrier 7 includes a storage unit 7 a that stores data on the type of the substrate W accommodated in the carrier 7 . The same type of substrate W may be accommodated in one carrier 7 . Examples of the information indicating the type of the substrate W include the surface energy of the substrate W, the warpage of the substrate W, the arrangement of patterns formed on the surface of the substrate W, and the like. The surface energy of the substrate W is an index indicating the wettability of the surface of the substrate W, and depending on its size, it can be determined whether the substrate W is a hydrophobic substrate W or a hydrophilic substrate W. In addition, in this specification, "the surface of the substrate W" means the top surface Wa or the bottom surface Wb of the substrate W (refer to FIG. 2).

The loading and unloading unit 5 is arranged adjacent to the placing unit 4 in the direction in which the loading and unloading station 2 and the processing station 3 are arranged (the left-right direction in FIG. 1 ). The loading and unloading section 5 includes an opening and closing door (not shown) provided for the placing section 4 . When the opening and closing door of the carrier 7 is opened together with the opening and closing door of the loading and unloading unit 5 while the carrier 7 is mounted on the placing unit 4, the inside of the loading and unloading unit 5 communicates with the inside of the carrier 7.

The carrying arm A1 and the shelf unit 6 are built in the loading and unloading part 5 . The transfer arm A1 is configured to perform "horizontal movement in the width direction of the loading/unloading unit 5, vertical movement in the vertical direction, and rotation around the vertical axis." The transfer arm A1 is configured to take out the substrate W from the carrier 7 and transfer it to the shelf unit 6 , and to receive the substrate W from the shelf unit 6 and return it to the carrier 7 . The shelf unit 6 is located near the processing station 3 and accommodates the substrate W.

The processing station 3 includes a transport unit 8 and a plurality of liquid processing units U (substrate processing apparatuses). The conveyance unit 8 extends horizontally in the direction in which the loading/unloading station 2 and the processing station 3 are arranged (the left-right direction in FIG. 1 ), for example. The conveying part 8 has a built-in conveying arm A2 (conveying part). The transfer arm A2 is configured to be able to perform "horizontal movement in the longitudinal direction of the transport unit 8, vertical movement in the vertical direction, and rotation around the vertical axis." The transfer arm A2 is configured to take out the substrate W from the shelf unit 6 and transfer it to the liquid processing unit U, and to receive the substrate W from the liquid processing unit U and return it to the shelf unit 6 .

The plurality of liquid processing units U are arranged in a row along the longitudinal direction of the conveyor 8 (the left-right direction in FIG. 1 ) on both sides of the conveyor 8 . The liquid processing unit U is configured to perform predetermined processing (eg, etching processing, cleaning processing, etc.) on the substrate W. The details of the liquid treatment unit U will be described in detail later.

The controller Ctr is configured to partially or entirely control the substrate processing system 1 . The details of the controller Ctr will be described in detail later.

[Details of liquid handling unit] Next, the liquid processing unit U will be described in detail with reference to FIGS. 2 and 3 . As illustrated in FIG. 2 , the liquid processing unit U includes a rotation holding unit 10 , (processing liquid) supply units 20 and 30 , an imaging unit 40 , and a plurality of photo sensors 50 .

The rotation holding part 10 includes a driving part 11 , a shaft part 12 and a holding part 13 . The drive unit 11 is configured to operate based on an operation signal from the controller Ctr so as to rotate the shaft unit 12 . The drive unit 11 may be a power source such as an electric motor.

The holding portion 13 is provided at the front end of the shaft portion 12 . The holding portion 13 is configured to adsorb and hold the bottom surface Wb of the substrate W through adsorption or the like. That is, the rotation holding part 10 may be configured to rotate the substrate W around the rotation center axis Ax perpendicular to the surface of the substrate W in a state where the attitude of the substrate W is approximately horizontal.

The supply unit 20 is configured to supply the chemical liquid L1 to the top surface Wa of the substrate W. Although not shown in the figure, the supply unit 20 may be configured to supply the chemical liquid L1 to the bottom surface Wb of the substrate W. The chemical liquid L1 may be, for example, an acidic chemical liquid, an alkaline chemical liquid, or an organic chemical liquid. The acidic chemical liquid may include, for example, SC-2 liquid (a mixed liquid of hydrochloric acid, hydrogen peroxide and pure water), SPM (a mixed liquid of sulfuric acid and hydrogen peroxide), HF liquid (hydrofluoric acid), and DHF liquid (diluted hydrogen Fluoric acid), HNO ₃ + HF liquid (mixed liquid of nitric acid and hydrofluoric acid), etc. The alkaline chemical liquid may include, for example, SC-1 liquid (a mixed liquid of ammonia water, hydrogen peroxide, and pure water), hydrogen peroxide, and the like.

The supply unit 20 includes a liquid source 21 , a pump 22 , a valve 23 , a nozzle 24 , a pipe 25 , and a drive source 26 . The liquid source 21 is a supply source of the chemical liquid L1. The pump 22 is configured to operate based on an operation signal from the controller Ctr to send the chemical liquid L1 sucked from the liquid source 21 to the nozzle 24 through the pipe 25 and the valve 23 .

The valve 23 is configured to operate in response to an operation signal from the controller Ctr to switch between an "open state that allows fluid to flow through the pipe 25" and a "closed state that prevents the fluid from flowing through the pipe 25." The nozzle 24 is arranged above the substrate W so that the discharge port faces the top surface Wa of the substrate W. The nozzle 24 is configured to discharge the "chemical liquid L1 sent by the pump 22" from the discharge port toward the top surface Wa of the substrate W. Since the substrate W is rotated by the rotation holding part 10 , the chemical liquid L1 discharged to the top surface Wa of the substrate W diffuses from the center portion toward the peripheral portion of the substrate W at a predetermined diffusion speed, and from the peripheral edge of the substrate W toward the outside. Throw out.

A liquid source 21, a pump 22, a valve 23, and a nozzle 24 are connected to the pipe 25 in this order from the upstream side. The driving source 26 is connected to the nozzle 24 directly or indirectly. The drive source 26 is configured to operate based on an operation signal from the controller Ctr so that the nozzle 24 moves above the substrate W in the horizontal direction or the vertical direction. Thereby, the chemical liquid L1 can be discharged not only to the center part of the top surface Wa of the substrate W, but also to any position on the top surface Wa of the substrate W. For example, the nozzle 24 may move from the periphery toward the center of the substrate W while the chemical liquid L1 is continuously discharged from the nozzle 24 (so-called sweep-in operation). Alternatively, the nozzle 24 may move from the center toward the periphery of the substrate W while the chemical liquid L1 is continuously discharged from the nozzle 24 (so-called sweep operation).

The supply unit 30 is configured to supply the cleaning liquid L2 to the substrate W. The cleaning liquid L2 is, for example, a liquid for removing (rinsing) "the chemical liquid L1 supplied to the top surface Wa of the substrate W, dissolved components of the film dissolved by the chemical liquid L1, etching residue, etc." from the substrate W. The cleaning liquid L2 may also contain, for example, pure water (DIW, deionized water), ozone water, carbonated water (CO ₂ water), ammonia water, etc.

The supply unit 30 includes a liquid source 31 , a pump 32 , a valve 33 , a nozzle 34 , a pipe 35 , and a drive source 36 . The liquid source 31 is a supply source of the cleaning liquid L2. The pump 32 is configured to operate based on an operation signal from the controller Ctr to send the cleaning liquid L2 sucked from the liquid source 31 to the nozzle 34 through the pipe 35 and the valve 33 .

The valve 33 is configured to operate in response to an operation signal from the controller Ctr to switch between an “open state that allows the fluid to flow through the pipe 35” and a “closed state that prevents the fluid from flowing through the pipe 35.” The nozzle 34 is arranged above the substrate W so that the discharge port faces the top surface Wa of the substrate W. Like the nozzle 24 , the nozzle 34 is configured to discharge the “cleaning liquid L2 sent by the pump 32 ” from the discharge port toward the top surface Wa of the substrate W. Since the substrate W is rotated by the rotation holding part 10, the cleaning liquid L2 discharged to the top surface Wa of the substrate W diffuses from the center part toward the peripheral part of the substrate W at a predetermined diffusion speed, and from the peripheral edge of the substrate W outwards Throw out.

A liquid source 31, a pump 32, a valve 33, and a nozzle 34 are connected to the pipe 35 in this order from the upstream side. The driving source 36 is connected to the nozzle 34 directly or indirectly. The drive source 36 is configured to operate based on an operation signal from the controller Ctr so that the nozzle 34 moves above the substrate W in the horizontal direction or the vertical direction. Thereby, the cleaning liquid L2 can be discharged not only to the center part of the top surface Wa of the substrate W, but also to any position on the top surface Wa of the substrate W. For example, the nozzle 34 may move from the periphery toward the center of the substrate W while the cleaning liquid L2 is continuously discharged from the nozzle 34 (so-called sweep-in operation). Alternatively, the nozzle 34 may move from the center toward the periphery of the substrate W while the cleaning liquid L2 is continuously discharged from the nozzle 34 (so-called sweeping operation).

The imaging unit 40 is arranged above the substrate W. The imaging unit 40 is configured to operate based on an operation signal from the controller Ctr so as to photograph the top surface Wa of the substrate W. Specifically, the imaging unit 40 may use a still image or a moving image to capture the substrate W covered by the chemical liquid L1 or the cleaning liquid L2 when the chemical liquid L1 or the cleaning liquid L2 is supplied to the top surface Wa of the substrate W. The covering state of the top Wa".

The imaging unit 40 is configured to send the captured image to the controller Ctr. The imaging unit 40 may be, for example, a CCD (charge-coupled device) camera, a COMS (Complementary Metal-Oxide-Semiconductor) camera, or the like. The installation location of the imaging unit 40 is not particularly limited as long as it is within the liquid processing unit U. For example, when the chemical liquid L1 or the cleaning liquid L2 is supplied to the bottom surface Wb of the substrate W, the imaging unit 40 may be disposed below the substrate W.

A plurality of photo sensors 50 are arranged above the substrate W. The plurality of photo sensors 50 include an irradiation part (not shown) and a receiving part (not shown). The irradiation unit is configured to operate based on an operation signal from the controller Ctr so as to irradiate light to “the top surface Wa of the substrate W being rotated through the rotation holding unit 10 ”. The receiving unit is configured to receive the light reflected from the top surface Wa of the substrate W (reflected light) and transmit the intensity of the reflected light (hereinafter referred to as “reflected intensity”) to the controller Ctr.

The light sensor 50 may be, for example, a laser sensor, a photoelectric sensor, or a color sensor. When the photo sensor 50 is a laser sensor, the irradiation part may also use, for example, a red laser (wavelength: 655 nm) as the laser light, or may also use other types of laser light.

The irradiation part of the photo sensor 50 may also irradiate light downward in a direction perpendicular to the top surface Wa of the substrate W. The irradiating part of the photo sensor 50 may also irradiate light to the top surface Wa of the substrate W via a light reflecting member (eg, a mirror), and the receiving part of the photo sensor 50 may also receive the reflected light via the mirror. In these cases, the irradiation part and the receiving part of the photo sensor 50 may be arranged in the same housing, or they may be independently separated.

The irradiation part of the photo sensor 50 may also irradiate light obliquely downward in a direction inclined with respect to the top surface Wa of the substrate W. In this case, the irradiation part and the receiving part of the photo sensor 50 may be arranged independently and separated, and the "light irradiation point on the top surface Wa of the substrate W" may be located between them.

The plurality of photo sensors 50 may also include three photo sensors 51 to 53 as illustrated in FIG. 2 . Each of the photo sensors 51 to 53 is configured to irradiate light toward “irradiation positions P1 to P3 provided to overlap the top surface Wa of the substrate W held by the rotation holding part 10”, and to receive light from the irradiation positions. The reflected light reflected by P1~P3. Each irradiation position P1 to P3 is a fixed position and does not change even if the substrate W rotates.

The irradiation positions P1 to P3 are set at mutually different positions as illustrated in FIG. 2 . That is, the irradiation locations P1 to P3 may be arranged from the center side of the substrate W toward the peripheral side. Specifically, the irradiation position P2 may be located closer to the peripheral edge side of the substrate W than the irradiation position P1 , and the irradiation position P3 may be located closer to the peripheral edge side of the substrate W than the irradiation position P2 . The irradiation positions P1 to P3 may be arranged in a row in the radial direction of the substrate W, as shown in FIG. 3(a) . Alternatively, the irradiation positions P1 to P3 may be arranged staggered in the circumferential direction of the substrate W instead of being arranged in the radial direction of the substrate W, as illustrated in FIG. 3(b) . That is, the irradiation positions P1 and P2 may not be on the straight line connecting the irradiation position P3 and the center of the substrate W. The irradiation positions P2 and P3 may not be on the straight line connecting the irradiation position P1 and the center of the substrate W. The irradiation positions P1 and P3 may not be on the straight line connecting the irradiation position P1 and the center of the substrate W. It does not need to be on the straight line connecting the irradiation point P2 and the center of the substrate W.

The intervals between the irradiation points P1 to P3 may be substantially equal to each other, or may be different from each other. When the radius of the substrate W is about 150 mm, the irradiation point P1 may be at a position about 50 mm from the center of the substrate W; the irradiation point P2 may be at a position about 100 mm from the center of the substrate W; and the irradiation point P3 may be at a distance from the center of the substrate W The position around 147mm from the center of W is also acceptable.

[Controller details] As illustrated in FIG. 4 , the controller Ctr includes a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are just for convenience to divide the functions of the controller Ctr into a plurality of modules. It does not mean that the hardware constituting the controller Ctr must be divided into such modules. Each functional module is not limited to being implemented by an executable program. It can also be implemented by a dedicated circuit (such as a logic circuit) or by an integrated circuit (ASIC: Application Specific Integrated Circuit) integrated therefrom. By.

The reading unit M1 is configured to read a program from the computer-readable storage medium RM. The storage medium RM stores a program for operating "each component of the substrate processing system 1 including the liquid processing unit U". The storage medium RM can also be, for example, a semiconductor memory, a recording optical disc, a recording magnetic disc, and a recording magneto-optical disc. In addition, in the following, each part of the substrate processing system 1 may include the rotation and holding part 10 , the supply parts 20 and 30 , the imaging part 40 and the photo sensor 50 .

The storage unit M2 is configured to store various data. The storage unit M2 may also store, for example, "the program read from the storage medium RM by the reading unit M1", "setting data input by the operator through an external input device (not shown)", and the like. The storage unit M2 can also store the photographing data photographed by the photographing unit 40 . The storage part M2 can also store the reflection intensity data obtained by the photo sensor 50 . The storage unit M2 may also store "data on the type of the substrate W accommodated in the carrier 7 that is read from the storage unit 7a of the carrier 7 in the placement unit 4".

The storage unit M2 may also store: "Data on the type of substrate W" and ""When a substrate W of this type is rotated, the processing liquid (chemical liquid L1 or cleaning liquid L2) is supplied to the top surface Wa of the substrate W Correspondence information that corresponds to "the allowable range R of the diffusion rate of the processing liquid on the top surface Wa of the substrate W". Here, the allowable range R can be defined, for example, as a diffusion speed included between the allowable lower limit value Vmin and the allowable upper limit value Vmax.

This allowable range R may be different for each type of substrate W. For example, when the substrate W is hydrophobic, the diffusion rate tends to be smaller, so the allowable lower limit value Vmin and the allowable upper limit value Vmax can be set to smaller values. On the other hand, for example, when the substrate W is hydrophilic, the diffusion rate tends to increase, so the allowable lower limit value Vmin and the allowable upper limit value Vmax can be set to larger values. Furthermore, for example, when the center portion of the substrate W is warped as if bulging downward, the diffusion speed tends to decrease, so the allowable lower limit value Vmin and the allowable upper limit value Vmax can be set to smaller values. On the other hand, for example, when the center portion of the substrate W is warped like an upward bulge, the diffusion rate tends to increase, so the allowable lower limit value Vmin and the allowable upper limit value Vmax can be set to larger values. For example, when the ratio of the pattern formed on the surface of the substrate W to extending in the circumferential direction of the substrate W is large, the diffusion speed tends to become smaller, so the allowable lower limit value Vmin and the allowable upper limit value Vmax can be Use the smaller value. On the other hand, for example, when the ratio of patterns formed on the surface of the substrate W is large and extends in the radial direction of the substrate W, the diffusion speed tends to increase, so the allowable lower limit value Vmin and the allowable upper limit value Vmin A larger value can be used as the value Vmax.

Based on the above content, an example of the corresponding information stored in the storage unit M2 is shown below. Type A of substrate W: Allowable range R1 (allowable lower limit value Vmin1 ~ allowable upper limit value Vmax1) Type B of substrate W: Allowable range R2 (allowable lower limit value Vmin2 ~ allowable upper limit value Vmax2) Type C of substrate W: Allowable range R3 (allowable lower limit value Vmin3 ~ allowable upper limit value Vmax3) ・・・

In addition, the allowable range R may also include an adjustment-free range Ra and an adjustment range Rb. The adjustment-free range Ra can be defined, for example, as the diffusion speed included between the adjustment-free lower limit value Vlow and the adjustment-free upper limit value Vhigh. There is no need to adjust the lower limit value Vlow to a value greater than the allowable lower limit value Vmin; there is no need to adjust the upper limit value Vhigh to a value smaller than the allowable upper limit value Vmax. That is, the adjustment-free range Ra is included in the allowable range R (Ra⊂R). On the other hand, the adjustment range Rb can be defined as the spread included in "the range from the allowable lower limit value Vmin to the lower limit value Vlow that does not require adjustment" and "the range from the upper limit value Vhigh that does not require adjustment to the allowable upper limit value Vmax" speed. That is, the lower limit value of the adjustment range Rb is equal to the allowable lower limit value Vmin and smaller than the lower limit value Vlow that does not require adjustment; the upper limit value of the adjustment range Rb is equal to the allowable upper limit value Vmax and smaller than the upper limit value that does not require adjustment. The value of Vhigh is large. The adjustment range Ra and the adjustment range Rb do not need to be set to values corresponding to the type of the substrate W.

The processing unit M3 is configured to process various data. For example, the processing unit M3 may generate signals for operating each unit of the substrate processing system 1 based on various data stored in the storage unit M2.

The instruction unit M4 is configured to transmit the operation signal generated by the processing unit M3 to each unit of the substrate processing system 1 .

The hardware of the controller Ctr may also be composed of one or a plurality of control computers, for example. As shown in FIG. 5 , the controller Ctr may include a circuit C1 as a hardware configuration. The circuit C1 may also be composed of circuit components. For example, the circuit C1 may also include a processor C2, a memory C3, a storage C4, a driver C5, and an input/output port C6.

The processor C2 may also be configured to implement the above functional modules by cooperating with at least one of the memory C3 and the storage C4 to execute the program and perform input and output of signals via the input and output port C6. The memory C3 and the storage C4 can also function as the storage unit M2. The driver C5 may be a circuit configured to drive each component of the substrate processing system 1 . The input/output port C6 may also be configured to mediate input and output of signals between the driver C5 and each component of the substrate processing system 1 .

The substrate processing system 1 may include one controller Ctr, or may include a controller group (control unit) composed of a plurality of controllers Ctr. When the substrate processing system 1 is provided with a controller group, each of the above functional modules can also be implemented by one controller Ctr, or can also be implemented by a combination of two or more controllers Ctr. When the controller Ctr is composed of a plurality of computers (circuit C1), each of the above functional modules can also be implemented by one computer (circuit C1), or can also be implemented by a combination of two or more computers (circuit C1). Realize. The controller Ctr may also have a plurality of processors C2. In this case, each of the above functional modules can also be implemented by one processor C2, or can also be implemented by a combination of two or more processors C2.

[Substrate processing method] Next, a method of processing the substrate W using the processing liquid will be described with reference to FIGS. 6 to 14 .

First, the carrier 7 is placed on the placement table of the placement unit 4 . At least one substrate W of the same type is accommodated in the carrier 7 . When the placement unit 4 detects that the carrier 7 is placed on the placement table, it reads the data on the type of the substrate W stored in the storage unit 7a of the carrier 7 and sends the data to the controller Ctr (see figure Step S1 of 6). The controller Ctr retrieves the corresponding information stored in the storage unit M2 based on the data on the type of substrate W, and obtains the allowable range R corresponding to the data on the type of substrate W (see step S2 in FIG. 6 ).

Next, the controller Ctr controls the transfer arms A1 and A2 to take out one substrate W from the carrier 7 and transfer it to any liquid processing unit U. The substrate W transported into the liquid processing unit U is adsorbed and held by the holding part 13 (see step S3 in FIG. 6 ).

Next, the controller Ctr controls the rotation holding portion 10 to rotate the substrate W while adsorbing and holding the bottom surface Wb of the substrate W by the holding portion 13 . In this state, the controller Ctr controls the supply unit 20 to supply the chemical liquid L1 from the nozzle 24 to the top surface Wa of the substrate W at a predetermined time (see step S4 in FIG. 6 ). At this time, the nozzle 24 can also perform a sweep-in operation or a sweep-out operation. The chemical liquid L1 supplied to the top surface Wa of the substrate W is diffused over the entire surface of the substrate W by the rotation of the substrate W, and is thrown outward from the peripheral edge of the substrate W. Therefore, while the supply of the chemical liquid L1 from the nozzle 24 continues, a liquid film of the chemical liquid L1 is formed on the top surface Wa of the substrate W. Thereby, the top surface Wa of the substrate W is processed. At this time, the imaging unit 40 may first photograph "the covering state of the top surface Wa of the substrate W covered with the chemical liquid L1 when the chemical liquid L1 is supplied to the top surface Wa of the substrate W", and then capture the The shooting data is sent to the controller Ctr.

Next, the controller Ctr controls the rotation and holding part 10 to rotate the substrate W while adsorbing and holding the back surface of the substrate W by the holding part 13 . In this state, the controller Ctr controls the supply unit 30 so that the cleaning liquid L2 is supplied from the nozzle 34 to the top surface Wa of the substrate W at a predetermined time (see step S5 in FIG. 6 ). At this time, the nozzle 34 can also perform a sweep-in operation or a sweep-out operation. The cleaning liquid L2 supplied to the top surface Wa of the substrate W is diffused over the entire surface of the substrate W by the rotation of the substrate W, and is thrown outward from the peripheral edge of the substrate W. Therefore, while the supply of the cleaning liquid L2 from the nozzle 34 continues, a liquid film of the cleaning liquid L2 is formed on the top surface Wa of the substrate W. Thereby, the top surface Wa of the substrate W is cleaned. At this time, the imaging unit 40 may first photograph "the covering state of the top surface Wa of the substrate W covered with the cleaning fluid L2 when the cleaning liquid L2 is supplied to the top surface Wa of the substrate W", and then capture the image. The shooting data is sent to the controller Ctr.

Here, as illustrated in FIG. 7 , from a time point before the cleaning liquid L2 is supplied to the top surface Wa of the substrate W, the light sensors 51 to 53 are first irradiated with light to the irradiation positions P1 to P3 to obtain Change in reflection intensity (refer to step S6 in Fig. 6). When the cleaning liquid L2 spreads outward in the radial direction of the substrate W on the top surface Wa of the substrate W, the cleaning liquid L2 passes through the irradiation locations P1 to P3 in sequence. Before and after the cleaning liquid L2 passes through the irradiation points P1 to P3, the reflection intensity from the top surface Wa of the substrate W greatly changes. This is presumably because the surface of the liquid film of the cleaning liquid L2 changes drastically, causing diffuse reflection of light. In addition, the type of the processing liquid, the flow rate of the processing liquid, the thickness of the liquid film of the processing liquid, etc. can be considered as the main factors for the change in the reflection intensity.

Here, "the results of measuring the reflection intensity at the irradiation locations P1 to P3 using the hydrophilic substrate W" are shown in FIGS. 8 and 9 . The hydrophilic substrate W is specifically a substrate on which a thermal oxidation film (Th—Ox) is formed on the surface.

Figure 8(a) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min and the rotation speed of the substrate W is set to 200 rpm." Figure 8(b) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min and the rotation speed of the substrate W is set to 500 rpm." Figure 8(c) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min and the rotation speed of the substrate W is set to 1000 rpm." Figure 8(d) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min and the rotation speed of the substrate W is set to 1500 rpm."

Figure 9(a) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min and the rotation speed of the substrate W is set to 200 rpm." Figure 9(b) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min and the rotation speed of the substrate W is set to 500 rpm." Figure 9(c) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min and the rotation speed of the substrate W is set to 1000 rpm." Figure 9(d) shows "changes in reflection intensity at respective positions of the irradiation points P1 to P3" when "the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min and the rotation speed of the substrate W is set to 1500 rpm."

As shown in FIGS. 8 and 9 , it can be seen that the reflection intensity suddenly increases in the order of the irradiation points P1 to P3 (the reflection intensity increases). That is, the arrival of the processing liquid at the irradiation locations P1 to P3 can be determined based on the time point at which the reflection intensity rises. Then, as shown in Figure 10, by plotting the "rise time point of the reflection intensity" and the "positions of the irradiation points P1 to P3" into a graph and obtaining an approximate straight line, it is possible to calculate the slope of the approximate straight line (also That is, the diffusion speed is calculated based on the time difference between the treatment liquid reaching the irradiation points P1 to P3 (see step S7 in FIG. 6 ).

Figure 10(a) shows the rise time of the reflection intensity at each position of the irradiation points P1 to P3 "when the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min and the rotation speed of the substrate W is set to 200 rpm" point"" and ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min, and the rotation speed of the substrate W is set to 200 rpm" "The rising time point of the reflection intensity at each position of the irradiation locations P1 to P3" ”. Figure 10(b) shows "when the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min, and the rotation speed of the substrate W is set to 500 rpm" "the rising time of the reflection intensity at each position of the irradiation positions P1 to P3" point"" and ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min, and the rotation speed of the substrate W is set to 500 rpm" "The rising time point of the reflection intensity at each position of the irradiation locations P1 to P3" ”.

Figure 10(c) shows the rise time of the reflection intensity at each position of the irradiation positions P1 to P3 "when the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min and the rotation speed of the substrate W is set to 1000 rpm" point"" and ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min, and the rotation speed of the substrate W is set to 1000 rpm" "The rising time point of the reflection intensity at each position of the irradiation positions P1 to P3" ”. Figure 10(d) shows "when the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min, and the rotation speed of the substrate W is set to 1500 rpm" "the rise time of the reflection intensity at each position of the irradiation positions P1 to P3" point"" and ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min, and the rotation speed of the substrate W is set to 1500 rpm" "The rising time point of the reflection intensity at each position of the irradiation locations P1 to P3" ”.

In addition, "the hydrophobic substrate W was used and the results of measuring the reflection intensity at the irradiation locations P1 to P3 in the same manner as above" were compared with the above-mentioned hydrophilic substrate W, and the comparison results are shown in Figures 11 to 11 13. Figure 11 (a) to (c) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1000 ml/min, and the rotation speed of the substrate W is set to 1000 rpm for the hydrophobic substrate W and the hydrophilic substrate W." "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 12 (a) to (c) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min, and the rotation speed of the substrate W is set to 1000 rpm for the hydrophobic substrate W and the hydrophilic substrate W." "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 13 (a) to (c) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min, and the rotation speed of the substrate W is set to 1000 rpm for the hydrophobic substrate W and the hydrophilic substrate W." "Changes in reflection intensity at respective positions of irradiation points P1 to P3".

The hydrophobic substrate W is specifically "a silicon substrate (so-called "bare silicon") in which the natural oxide layer has been removed by surface treatment using a DHF solution (dilute hydrofluoric acid)." As shown in FIGS. 11 to 13 , even for the hydrophobic substrate W, it can be seen that the reflection intensity suddenly increases in the order of irradiation points P1 to P3 (reflection intensity increases). However, in particular, as the discharge flow rate of the substrate W becomes smaller, it is seen that the reflection intensity of the hydrophobic substrate W at the irradiation point P3 increases more slowly than that of the hydrophilic substrate W. Therefore, as shown in FIG. 14 , it was confirmed that the hydrophobic substrate W has a slower diffusion speed than the hydrophilic substrate W.

Next, the controller Ctr determines whether the diffusion speed calculated in step S7 is within the allowable range R obtained in step S2 (see step S8 in FIG. 6 ). According to the judgment result of the controller Ctr, when the diffusion speed calculated in step S7 is not within the allowable range R obtained in step S2 (see "NO" in step S8 in FIG. 6 ), there is a possibility that the processing of the substrate W is inappropriate. sex. Therefore, the controller Ctr causes the storage unit M2 to store the imaging data during processing of the substrate W or the processing conditions of the substrate W captured by the imaging unit 40 together with the result determined to be inappropriate (refer to the step of FIG. 6 S9). At this time, the controller Ctr may report "an alarm indicating that the diffusion rate is not within the allowable range R" through a notification unit not shown in the figure (for example, the alarm may be displayed on the display or the alarm may be sounded through a speaker). sound or alarm notification). After step S9, the processing of the substrate W ends. Thereafter, the processing of the subsequent substrate W may be interrupted, or the subsequent substrate W may be processed using a liquid processing unit U different from the "liquid processing unit U that may have performed inappropriate processing of the substrate W". W processing.

According to the judgment result of the controller Ctr, when the diffusion speed calculated in step S7 is within the allowable range R obtained in step S2 (refer to "YES" in step S8 of FIG. 6), the process proceeds to step S10. In step S10, the controller Ctr determines whether the diffusion speed calculated in step S7 is within the unnecessary adjustment range Ra among the allowable range R obtained in step S2. According to the judgment result of the controller Ctr, when the diffusion speed calculated in step S7 is not within the unnecessary adjustment range Ra among the allowable range R obtained in step S2 (refer to "NO" in step S10 of FIG. 6), it may still be possible. There is room for improving the processing conditions of the substrate W. Therefore, the controller Ctr changes the subsequent processing conditions of the substrate W (see step S11 in FIG. 6 ). Here, examples of the changeable processing conditions include the rotation speed of the subsequent substrate W, the flow rate of the processing liquid discharged to the subsequent substrate W, and the like. At this time, when the controller Ctr determines that the diffusion speed is not within the unnecessary adjustment range Ra, the storage unit M2 may also be caused to store the photographing data of the substrate W photographed by the imaging unit 40 during processing in the same manner as step S9. or the processing conditions of the substrate W. In addition, the controller Ctr may also report "an alarm indicating that the diffusion speed is not within the adjustment-free range Ra" from a notification unit (not shown) in the same manner as above. After step S11, the processing of the substrate W ends. Thereafter, a liquid processing unit U different from "the liquid processing unit U with a judgment result that the diffusion velocity is not within the range Ra that does not require adjustment" may be used, and subsequent processing of the substrate W can be performed under the changed processing conditions. Alternatively, "the liquid processing unit U with a judgment result that the diffusion velocity is not within the range Ra that does not require adjustment" can also be used, and the subsequent processing of the substrate W can be performed under the changed processing conditions.

According to the judgment result of the controller Ctr, when the diffusion speed calculated in step S7 is within the unnecessary adjustment range Ra among the allowable range R obtained in step S2 (refer to "YES" in step S10 in Figure 6), it can be It is estimated that the substrate W is processed appropriately. Therefore, the processing of the substrate W ends after step S10. Thereafter, the same liquid processing unit U may be used, and subsequent processing of the substrate W may be performed under the same processing conditions.

[effect] From the above example, it is possible to understand how fast the processing liquid spreads on the surface of the substrate W. Here, the diffusion rate may change due to the influence of the surface state of the substrate W, the state of the liquid processing unit U, or the like. When the diffusion speed is extremely slow, for example, it may be determined that the entire surface of the substrate W may not be covered with the processing liquid. On the other hand, when the diffusion speed is extremely high, it can be determined that there is a possibility that the liquid processing unit U is malfunctioning, or that the surface condition of the substrate W is inappropriate, for example. Therefore, by judging whether the processing of the substrate W is appropriate based on the diffusion speed, the coating state of the surface of the substrate W covered with the processing liquid can be detected, and the surface state of the substrate W or the state of the liquid processing unit U can be evaluated. . In addition, compared with the case of using a camera to obtain the surface state of the substrate W, by using the photo sensor 50 to obtain the surface state of the substrate W, it is possible to suppress the increase in the size of the liquid processing unit U and reduce the data to be processed. can simplify calculation processing. Therefore, it is possible to detect the coating state of the surface of the substrate W covered with the processing liquid and to evaluate the surface state of the substrate W or the state of the liquid processing unit U at low cost.

Based on the above example, the allowable range R is obtained based on "the data on the type of substrate W read from the storage unit 7a of the carrier 7" and "the corresponding information stored in the storage unit M2", and the calculated diffusion is determined. Whether the speed is within the allowable range R. In this case, the allowable range R of the diffusion rate of the processing liquid is set appropriately for each type of substrate W. Therefore, "detection of the covering state of the top surface Wa of the substrate W covered with the processing liquid" and "evaluation of the quality of the surface state of the substrate W or the state of the liquid processing unit U" can be performed more accurately.

According to the above example, the allowable range R includes the adjustment-free range Ra and the adjustment range Rb, and it is determined whether the calculated diffusion speed is within the adjustment-free range Ra. In this case, even if the processing result of the substrate W is judged to be good, when the diffusion speed is within the adjustment range Rb, the rotation speed of the substrate W or the flow rate of the processing liquid is changed. That is, the processing conditions of the substrate W are adjusted so that the subsequent processing results of the substrate W become better. Thereby, the substrate W can be processed more appropriately.

According to the above example, when the coating state of the surface of the substrate W is determined to be inappropriate, "the imaging data of the substrate W being processed or the processing conditions of the substrate W captured by the imaging unit 40" and "it is determined to be inappropriate" "Appropriate results" are stored together in the storage unit M2. In this case, the worker can easily confirm the processing status of the substrate W when the "inappropriate result" occurs.

[Modification] All points disclosed in this specification should be regarded as illustrative only and not restrictive. Various omissions, substitutions, changes, etc. may be made to the above examples without departing from the scope of the patent application and its gist.

(1) In the liquid processing unit U, the processing of the substrate W can also be performed in a light-shielded space. For example, the housing constituting the liquid treatment unit U may also be made of light-shielding material. In this case, since the photo sensor 50 is used, the diffusion speed can be calculated even when the substrate W is processed using a processing liquid whose properties may change due to light. Therefore, compared with the case of using a camera, it is possible to detect the covering state of the surface of the substrate W covered with the processing liquid for a wider variety of processing liquids, and to evaluate the surface state of the substrate W or the state of the liquid processing unit U. bad.

(2) In the above example, when the cleaning liquid L2 is supplied to the substrate W, the light sensor 50 calculates the diffusion speed of the cleaning liquid L2 to determine whether the substrate W is properly processed. However, when the chemical liquid L1 is supplied to the substrate W, the diffusion rate of the chemical liquid L1 can also be calculated to determine whether the substrate W is properly processed.

(3) In the above example, three photo sensors 51 to 53 are used to calculate the diffusion speed, but at least two photo sensors 50 can also be used to calculate the diffusion speed.

(4) Even when the nozzles 24 and 34 supply the processing liquid to the substrate W while performing a sweeping operation from the center to the periphery of the substrate W, the diffusion speed of the processing liquid can be calculated by the photo sensor 50 . Specifically, when the nozzles 24 and 34 perform the sweeping operation, the substrate W gradually dries from the center due to evaporation of the processing liquid. Therefore, the reflection intensity changes greatly before and after drying. Therefore, the evaporation rate of the treatment liquid can be determined based on this change. Since the faster the diffusion rate of the treatment liquid is, the faster the evaporation rate of the treatment liquid becomes; the slower the diffusion rate of the treatment liquid is, the slower the evaporation rate of the treatment liquid becomes. Therefore, the evaporation rate of the treatment liquid can be calculated by speed to obtain the diffusion speed of the treatment liquid.

(5) In addition, as illustrated in FIG. 15 , the processing liquid supplied to the substrate W may not spread evenly in the radial direction of the substrate W. In this case, by using at least four photo sensors 50, uneven diffusion of the treatment liquid can be detected. Specifically, "a plurality of irradiation locations arranged in the first direction (in the example of Fig. 15, three points of irradiation locations P1 to P3)" and "a plurality of irradiation locations arranged in the second direction (in the example of Fig. 15 In the example, it is the three points of irradiation (P4~P6)". The first direction extends along the radial direction of the substrate W. The second direction is along the radial direction of the substrate W and extends in a direction different from the first direction. Next, "the diffusion velocity of the processing liquid when passing through the plurality of irradiation sites arranged in the first direction" and "the diffusion velocity of the processing liquid when passing through the plurality of irradiation sites arranged in the second direction" are calculated respectively. difference in diffusion speed. When the difference is larger than a predetermined threshold, it can be determined that there is uneven diffusion of the treatment liquid.

(6) The controller Ctr may also arrange the calculated diffusion speeds in chronological order and store them in the storage unit M2 as so-called records. The controller Ctr can also predict when the diffusion rate will exceed the allowable range R in the future based on the historical records accumulated over time. For example, when a plurality of diffusion speeds constituting a record gradually increase over time, the time when the future diffusion speed exceeds the allowable range R can be predicted by calculating these approximate lines.

(7) In addition, in the case of the hydrophobic substrate W, the processing liquid may not cover the surface of the substrate W depending on the processing conditions. This point will be explained with reference to "Figures 16 to 18 showing the results of processing the substrate W under various processing conditions using a hydrophobic substrate W and a hydrophilic substrate W."

Figure 16 (a) to (c) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 1000 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 16 (d) to (f) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 1000 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 16 (g) to (i) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1000 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 1000 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3".

Figure 17 (a) to (c) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 500 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 17 (d) to (f) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 500 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 17 (g) to (i) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1000 ml/min, and the rotation speed of the substrate W is set to 500 rpm for the hydrophobic substrate W and the hydrophilic substrate W." The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3".

Figure 18 (a) to (c) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 2000 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 200 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figure 18 (d) to (f) shows ""When the discharge flow rate of the cleaning liquid L2 is set to 1500 ml/min, and the rotation speed of the substrate W is set to 200 rpm for the hydrophobic substrate W and the hydrophilic substrate W." The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3". Figures 18(g) to (i) show ""When the discharge flow rate of the cleaning liquid L2 is set to 1000 ml/min for the hydrophobic substrate W and the hydrophilic substrate W, and the rotation speed of the substrate W is set to 200 rpm" The graph of "Changes in reflection intensity at respective positions of irradiation points P1 to P3".

Under the processing conditions of FIG. 16 , the reflection intensity shows the same change in both the hydrophobic substrate W and the hydrophilic substrate W. On the other hand, under the processing conditions of FIGS. 17 and 18 , since the rotation speed of the substrate W is slower than that of the processing conditions of FIG. 16 , extremely low reflection intensity is detected on the peripheral side of the hydrophobic substrate W (see FIG. 17 ( h), (i) and Figure 18(c), (e), (f), (h), (i)). That is, by using the photo sensor 50 to obtain changes in reflection intensity, it can be determined whether the processing liquid covers the surface of the substrate W. In other words, the controller Ctr can also determine the state of the surface of the substrate W being covered by the processing liquid based on the reflection intensity received from the photo sensor 50 . In this case, it can be automatically determined whether the surface of the substrate W is covered with the processing liquid without relying on the visual inspection of the operator.

Furthermore, as shown in FIG. 16 , when the flow rate of the processing liquid or the rotation speed of the substrate W is large, the surface of the substrate W tends to be appropriately covered with the processing liquid. However, generally speaking, the processing conditions of the substrate W are determined in advance according to the type of the substrate W, and for all the substrates W, there may be cases where the flow rate of the processing liquid cannot be set large or the rotation speed of the substrate W cannot be set large. . Especially when the flow rate of the processing liquid or the rotation speed of the substrate W is large, there is a concern that the processing liquid is scattered around or the air flow near the surface of the substrate W is turbulent, causing particles to be generated on the surface of the substrate W. Therefore, by automatically detecting the coating state of the processing liquid on the surface of the substrate W afterwards, the substrate W can be processed under preset processing conditions as much as possible.

[Other examples] Example 1. An example of a substrate processing apparatus, which includes: a rotation holding unit configured to hold and rotate a substrate; a supply unit configured to supply a processing liquid to the surface of the substrate; and a first photo sensor configured as irradiate light toward the first irradiation place and receive the reflected light, and the first irradiation place is arranged to overlap with the surface of the substrate held in the rotation holding part; the second photo sensor is configured to irradiate toward the second irradiation place light, and receives the reflected light, and the second irradiation point is arranged to overlap with the surface of the substrate held in the rotation holding part, and is located radially outside the substrate compared with the first irradiation point; and a control part. The control unit is configured to perform the following processes: a first process of controlling the rotation holding unit to rotate the substrate; a second process of controlling the supply unit to supply the processing liquid to the surface of the rotating substrate; and a second process based on the first photo sensor. The change in the intensity of the reflected light obtained at the first irradiation point is used to detect the third treatment of the treatment liquid reaching the first irradiation point; according to the change in the intensity of the reflected light obtained at the second irradiation point by the second photo sensor Change, the fourth process in which the treatment liquid reaches the second irradiation point is detected; based on the "time difference between "the time point when the treatment liquid reaches the first irradiation place" and "the time point when the treatment liquid reaches the second irradiation place", The fifth process is to calculate the diffusion rate of the processing liquid on the surface of the substrate; and the sixth process is to determine whether the substrate is properly processed based on the diffusion rate calculated in the fifth process. In this case, it is possible to grasp how quickly the processing liquid spreads on the surface of the substrate. Here, the diffusion rate may change due to the influence of the surface state of the substrate, the state of the substrate processing apparatus, or the like. When the diffusion speed is extremely slow, for example, it may be determined that the entire surface of the substrate W may not be covered with the processing liquid. On the other hand, when the diffusion rate is extremely high, it can be determined that, for example, there is a possibility that the substrate processing apparatus is malfunctioning or that the surface condition of the substrate is inappropriate. Therefore, by judging whether the processing of the substrate is appropriate based on the diffusion speed, the coating state of the surface of the substrate covered with the processing liquid can be detected, and the surface state of the substrate or the state of the substrate processing apparatus can be evaluated. In addition, compared with the case of using a camera to obtain the surface state of the substrate, by using a light sensor to obtain the surface state of the substrate, it is possible to suppress an increase in the size of the device, reduce the amount of data to be processed, and simplify calculations. handle. Therefore, it is possible to detect the covering state of the surface of the substrate covered with the processing liquid and to evaluate the surface state of the substrate or the state of the substrate processing apparatus at low cost.

Example 2. The device of Example 1 further includes: a storage unit configured to store ""data on the type of substrate" and "the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the substrate that is rotating. The allowable range of the diffusion rate of the processing liquid "corresponding information"; and the acquisition unit is configured to acquire the type of substrate; the control unit is configured to further execute: based on "the type of substrate acquired by the acquisition unit" and "Corresponding information stored in the storage unit", and the seventh process of obtaining the allowable range of the substrate; the sixth process may also include a process of determining whether the diffusion speed calculated in the fifth process is within the allowable range obtained in the seventh process . In this case, the allowable range of the diffusion rate of the processing liquid is set appropriately for each type of substrate. Thereby, "detection of the covering state of the surface of the substrate covered with the processing liquid" and "evaluation of the surface state of the substrate or the quality of the state of the substrate processing apparatus" can be performed more accurately.

Example 3. In the device of Example 2, the allowable range includes a range that does not require adjustment and an adjustment range; the upper limit of the adjustment range is set to be larger than the upper limit of the range that does not require adjustment, and the lower limit of the adjustment range is set to be larger than the range that does not require adjustment. The lower limit is small; the control unit may also be configured to further: when it is determined in the sixth process that the diffusion speed calculated in the fifth process is within the adjustment range, control at least one of the rotation holding unit and the supply unit to change the subsequent substrate The eighth process is at least one of the rotation speed and the flow rate of the processing liquid discharged to the subsequent substrate. In this case, even if the processing result of the substrate is judged to be good, if the diffusion speed is within the adjustment range, the rotation speed of the substrate or the flow rate of the processing liquid is changed. That is, the processing conditions of the substrate are adjusted to make the subsequent processing results of the substrate better. Thereby, the substrate W can be processed more appropriately.

Example 4. Any one of the devices in Examples 1 to 3 further includes: an imaging unit configured to photograph the supply of the processing liquid to the surface of the substrate; and the control unit may also be configured to determine the surface of the substrate when performing the sixth process. When the coverage status is inappropriate, "the photographic data of the substrate being processed or the processing conditions of the substrate captured by the imaging unit" are stored in the storage unit together with the "result judged to be inappropriate". Nine processing. In this case, the staff can easily confirm the processing status of the substrate when the "result judged as inappropriate" occurs.

Example 5. In any of the devices in Examples 1 to 4, the first photo sensor and the second photo sensor are laser sensors; the second to fourth processes can also be performed in a light-shielded space. . In this case, since a photo sensor is used, the diffusion speed can be calculated even when the substrate is processed using a processing liquid whose properties may change due to light. Therefore, compared with the case of using a camera, it is possible to detect the covering state of the surface of the substrate covered with the processing liquid for a wider variety of processing liquids, and to evaluate the surface state of the substrate or the quality of the state of the substrate processing apparatus.

Example 6. An example of a substrate processing method, which includes: a first step, a rotating holding part holds the substrate and rotates the substrate, and a supply part supplies a processing liquid to the surface of the substrate; a second step, using the first light sensor irradiate light toward the first irradiation point of the rotating substrate, and detect the arrival of the processing liquid at the first irradiation point based on the intensity change of the reflected light obtained by the first light sensor; the third step is to use the second light The sensor irradiates light toward the second irradiation point of the rotating substrate, and detects that the processing liquid reaches the second irradiation point based on the intensity change of the reflected light obtained by the second light sensor, wherein the second irradiation The position is located outside the radial direction of the substrate compared to the first irradiation position; the fourth step is to calculate the time difference between the time when the processing liquid reaches the first irradiation position and the time when the processing liquid reaches the second irradiation position. the diffusion rate of the treatment liquid on the surface; and the fifth step, judging whether the substrate is properly processed based on the diffusion rate calculated in the fourth step. In this case, the same operational effects as those of the device of Example 1 can be obtained.

Example 7. The method in Example 6 further includes: a sixth step, obtaining the type of substrate; and a seventh step, obtaining the allowable range of the substrate based on the type and corresponding information of the substrate obtained in the sixth step; the corresponding information is " "Data on the type of substrate" and ""The allowable range of the diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the substrate that is rotating with the type"" correspond to each other ; The fifth step may also include determining whether the diffusion speed calculated in the fourth step is within the allowable range obtained in the seventh step. In this case, the same operational effects as those of the device of Example 2 can be obtained.

Example 8. In the method of Example 7, the allowable range includes the range that does not require adjustment and the range that does not require adjustment; the upper limit of the adjustment range is set to be larger than the upper limit of the range that does not require adjustment, and the lower limit of the adjustment range is set to be larger than the range that does not require adjustment. The lower limit is small; the method of Example 7 may further include changing at least one of the rotation speed of the subsequent substrate and the flow rate of the processing liquid discharged to the subsequent substrate when it is determined in the fifth step that the diffusion speed calculated in the fourth step is within the adjustment range. The eighth step of one party. In this case, the same effects as those of the device of Example 3 can be obtained.

Example 9. Any one of the methods in Examples 6 to 8 may further include: when it is determined in the fifth step that the covering state of the surface of the substrate is inappropriate, using Or the processing condition of the substrate" and "the result determined to be inappropriate" are stored together in the ninth step of the storage unit. In this case, the same operational effects as those of the device of Example 4 can be obtained.

Example 10. In any of the methods in Examples 6 to 9, the first light sensor and the second light sensor are both laser sensors; the first to third steps can also be in a light-shielded space. Implement. In this case, the same effects as those of the device of Example 5 can be obtained.

1: Substrate processing system (substrate processing device) 4: Placing part (acquisition part) 7:Vehicle 7a:Storage Department 10: Rotation holding part 11:Drive Department 12: Shaft 13: Holding part 20,30: (Processing liquid) supply department 21,31:Liquid source 22,32:Pump 23,33: valve 24,34:Nozzle 25,35:Piping 26,36:Drive source 2: Moving in and out of the station 35:Piping 36:Drive source 40:Photography department 50~53:Light sensor A1: Carrying arm A2: Carrying arm (transporting part) Ax: rotation center axis C1: loop C2: Processor C3: memory C4: Storage C5: drive C6: Input and output port Ctr: Controller (Control Department) L1:Chemical liquid L2: cleaning fluid M1:Reading part M2: Storage Department M3: Processing Department M4: Command Department P1~P6: irradiation place R, R1~R3: Allowable range RM: storage media Ra: No need to adjust the range Rb: adjustment range S1~S11: steps U: Liquid processing unit (substrate processing device) Vhigh: No need to adjust the upper limit value Vlow: No need to adjust the lower limit value Vmax, Vmax1~Vmax3: allowable upper limit value Vmin, Vmin1~Vmin3: allowable lower limit value W: substrate Wa: top surface (surface) Wb: Bottom (surface)

[Fig. 1] Fig. 1 is a plan view schematically showing an example of a substrate processing system. [Fig. 2] Fig. 2 is a side view schematically showing an example of the liquid treatment unit. [Fig. 3] Fig. 3 (a) and (b) are top views showing an example of an irradiation position for irradiation using a photo sensor. [Fig. 4] Fig. 4 is a block diagram showing an example of a main part of the substrate processing system. [Fig. 5] Fig. 5 is a schematic diagram showing an example of the hardware configuration of the controller. [Fig. 6] Fig. 6 is a flowchart illustrating an example of a substrate processing procedure. [Fig. 7] Fig. 7 is a side view for explaining an example of the calculation procedure of the diffusion velocity. [Fig. 8] Fig. 8 (a) to (d) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when a hydrophilic substrate is used. [Fig. 9] Fig. 9 (a) to (d) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when a hydrophilic substrate is used. [Fig. 10] Figs. 10(a) to (d) are graphs showing the covering speed of the processing liquid under the processing conditions of Figs. 8 and 9. [Fig. 11] Fig. 11 (a) to (c) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when using hydrophobic and hydrophilic substrates. [Fig. 12] Fig. 12 (a) to (c) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when using hydrophobic and hydrophilic substrates. [Fig. 13] Fig. 13 (a) to (c) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when hydrophobic and hydrophilic substrates are used. [Fig. 14] Figs. 14(a) to (c) are graphs showing the covering speed of the processing liquid under the processing conditions of Figs. 11 to 13. [Fig. 15] Fig. 15 is a top view showing another example of the irradiation position for irradiation using a photo sensor. [Fig. 16] Fig. 16 (a) to (i) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when hydrophobic and hydrophilic substrates are used. [Fig. 17] Fig. 17 (a) to (i) are graphs showing the results of measuring the intensity of reflected light at the irradiation positions P1 to P3 when hydrophobic and hydrophilic substrates are used. [Fig. 18] Fig. 18 (a) to (i) are graphs showing the results of measuring the intensity of reflected light at the irradiation locations P1 to P3 when hydrophobic and hydrophilic substrates are used.

1:Substrate processing system

7a:Storage Department

10: Rotation holding part

20,30: (Processing liquid) supply department

40:Photography department

50:Light sensor

Ctr:Controller

M1:Reading part

M2: Storage Department

M3: Processing Department

M4: Command Department

RM: storage media

U: liquid processing unit

Claims (10)

A substrate processing device having: a rotation holding portion configured to hold the substrate and rotate the substrate; The supply unit is configured to supply the processing liquid to the surface of the substrate; The first photo sensor is configured to irradiate light toward a first irradiation point and receive its reflected light, wherein the first irradiation point is arranged to overlap with the surface of the substrate held on the rotation holding part; The second photo sensor is configured to irradiate light toward a second irradiation point and receive its reflected light, wherein the second irradiation point is disposed to overlap with the surface of the substrate held on the rotation holding part and with The first irradiation point is located radially outward of the substrate; and control department; This control department is configured to perform the following processing: The first process of controlling the rotation holding part to rotate the substrate; Control the supply part to supply the second treatment of the processing liquid to the surface of the rotating substrate; According to the change in the intensity of the reflected light obtained by the first light sensor at the first irradiation location, it is detected that the treatment liquid reaches the third treatment at the first irradiation location; According to the change in the intensity of the reflected light obtained by the second light sensor at the second irradiation location, the fourth process of the treatment liquid reaching the second irradiation location is detected; The fifth process of calculating the diffusion rate of the processing liquid on the surface of the substrate based on the time difference between the time point when the processing liquid reaches the first irradiation position and the time point when the processing liquid reaches the second irradiation position; and The sixth process is to determine whether the processing of the substrate is appropriate based on the diffusion speed calculated in the fifth process. The substrate processing device as described in claim 1 further has: The storage unit is configured to store data on the type of the substrate and an allowable range of the diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the rotating substrate of the type. corresponding corresponding information; and The acquisition unit is configured to acquire the type of the substrate; The control unit is configured to further execute a seventh process of acquiring the allowable range of the substrate based on the type of the substrate acquired by the acquisition unit and the corresponding information stored in the storage unit; The sixth process further includes a process of determining whether the diffusion speed calculated in the fifth process is within the allowable range obtained in the seventh process. The substrate processing device according to claim 2, wherein, The allowable range includes the no-adjustment range and the adjustment range; The upper limit of the adjustment range is set to be greater than the upper limit of the adjustment range that does not require adjustment, and the lower limit of the adjustment range is set to be smaller than the lower limit of the adjustment range that does not require adjustment; The control unit is further configured to: when it is determined in the sixth process that the diffusion speed calculated in the fifth process is within the adjustment range, control at least one of the rotation holding unit and the supply unit, and change the subsequent The eighth process is at least one of the rotation speed of the substrate and the flow rate of the processing liquid discharged to the subsequent substrate. The substrate processing device as described in any one of claims 1 to 3, further includes: the imaging unit is configured to photograph the supply of the processing liquid to the surface of the substrate; The control unit is further configured to: when it is determined that the covering state of the surface of the substrate is inappropriate in the sixth process, use the imaging data of the substrate during processing or the processing conditions of the substrate captured by the imaging unit, and The results determined to be inappropriate are stored together in the ninth process of the storage unit. The substrate processing device according to claim 1, wherein, Both the first light sensor and the second light sensor are laser sensors; The second process to the fourth process are performed in a light-shielded space. A substrate processing method comprising: In the first step, the rotational holding part holds and rotates the substrate, and the supply part supplies the processing liquid to the surface of the substrate; In the second step, the first photo sensor is used to irradiate light toward the first irradiation point of the rotating substrate, and based on the intensity change of the reflected light obtained by the first photo sensor, the arrival of the processing liquid at the destination is detected. the first irradiation point; The third step is to use the second photo sensor to irradiate light toward the second irradiation point of the rotating substrate, and detect the arrival of the processing liquid according to the intensity change of the reflected light obtained by the second photo sensor. The second irradiation location, wherein the second irradiation location is located radially outward of the substrate compared to the first irradiation location; The fourth step is to calculate the diffusion rate of the processing liquid on the surface of the substrate based on the time difference between the time when the processing liquid reaches the first irradiation location and the time when the processing liquid reaches the second irradiation location; and The fifth step is to determine whether the substrate is properly processed based on the diffusion speed calculated in the fourth step. The substrate processing method as described in claim 6 further includes: The sixth step is to obtain the type of substrate; and The seventh step is to obtain the allowable range of the substrate based on the type and corresponding information of the substrate obtained in the sixth step; The corresponding information corresponds to the data on the type of the substrate and the allowable range of the diffusion rate of the processing liquid on the surface of the substrate when the processing liquid is supplied to the surface of the substrate in rotation of the type. information; The fifth step further includes the step of determining whether the diffusion speed calculated in the fourth step is within the allowable range obtained in the seventh step. The substrate processing method as described in claim 7, wherein, The allowable range includes the no-adjustment range and the adjustment range; The upper limit of the adjustment range is set to be greater than the upper limit of the adjustment range that does not require adjustment, and the lower limit of the adjustment range is set to be smaller than the lower limit of the adjustment range that does not require adjustment; The substrate processing method further includes: when it is determined in the fifth step that the diffusion speed calculated in the fourth step is within the adjustment range, changing at least one of the rotation speed of the subsequent substrate and the flow rate of the processing liquid discharged to the subsequent substrate. The eighth step of one party. The substrate processing method as described in any one of claims 6 to 8, further comprising: When it is determined in the fifth step that the covering state of the surface of the substrate is inappropriate, the imaging data of the substrate being processed or the processing conditions of the substrate captured by the imaging unit are stored together with the result of being determined to be inappropriate. The ninth step of the storage department. The substrate processing method as described in claim 6, wherein, Both the first light sensor and the second light sensor are laser sensors; The first step to the third step are performed in a light-shielded space.

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