TW201936045A - Chip sucking device and chip bonding system including a base, a porous sucking disk arranged on the base, a vacuum gas source and a first gas guiding channel - Google Patents

Abstract

The present invention provides a chip sucking device and a chip bonding system. The chip sucking device includes a base, a porous ceramic sucking disk arranged on the base, a vacuum gas source and a first gas guiding channel. The first gas guiding channel is disposed inside the base, and contacts a non-sucking surface of the porous ceramic sucking disk. A first end of the first gas guiding channel communicates with pores exposed on the non-sucking surface of the porous ceramic sucking disk. A second end of the first gas guiding channel communicates with the vacuum gas source. The chip sucking device of the present invention is capable of solving the problem that a single-pore sucking disk can only suck a chip of a specific size and the carrier needs to be replaced when the chip size changes, effectively sucking chips of different sizes, improving the utilization of the carrier and the efficiency of the chip bonding system, and reducing the accuracy requirements of the placement position of the chip, thereby increasing the moving speed and placement speed of a pickup hand and a bonding hand, and improving the work efficiency.

Description

Wafer adsorption device and wafer bonding system

The present invention relates to semiconductor technology, for example, to a wafer adsorption device and a wafer bonding system.

In the semiconductor packaging process, semiconductor wafers are often mounted on a substrate or other carrier for processing. Wafer operation is a key process in electronic packaging, including wafer jacking, film release, picking, and placement operations, in which wafers are placed. The device is a carrier. In order to avoid the picking error of the bonding hand caused by the position of the wafer during the movement of the carrier, a suction cup is installed on the carrier to fix the wafer. The commonly used suction cups are ordinary single-hole suction cups. The aperture is large, is millimeter level and is designed according to the size of the wafer. It can only absorb wafers of a certain size. When the size of the bonded wafer changes, the carrier must also be replaced accordingly. Therefore, the use of the carrier in the above bonding device The lower rate leads to prolonged semiconductor wafer production operation time, increased cost, and affected yield.

At present, the main wafer placement and picking operation method of wafer wafer equipment is: After the stage moves to the wafer transfer position, the picker places the wafer downward with a certain pressure. After the wafer is accurately placed on the suction cup, the vacuum is turned on and the suction cup is carried out through the vacuum tube. Vacuum supply, so that the wafer is vacuum-sucked on the upper surface of the chuck. The picking hand opens the wafer with positive pressure to release the wafer. When the bonding hand takes the wafer from the stage, First, the bonding hand grasps the wafer accurately, and supplies vacuum to the bonding hand. Then, the suction cup releases the vacuum to turn on the positive pressure. The bonding hand removes the wafer to the bonding table to complete the bonding process. In this wafer operation, the single-hole sucker mounted on the stage is uniquely designed according to the size of the wafer. When the wafer size changes, the stage needs to be replaced simultaneously, resulting in lower stage utilization, longer production time, and increased costs; In addition, the single hole sucker has a large hole diameter. In order to facilitate vacuum suction, the wafer must be placed at the center of the hole. The position accuracy of the wafer is very high. Usually, to ensure the accuracy of the wafer position, the speed of the bonding hand before placing the wafer Need to reduce, resulting in reduced work efficiency and reduced productivity.

The invention provides a wafer adsorption device and a wafer bonding system, which avoids the waste of time for changing the carrier caused by the change in the size of the wafer, and improves the utilization rate of the carrier and the working efficiency of the bonding device.

According to a first aspect, the present invention provides a wafer adsorption device including a base plate, a porous ceramic chuck on the base plate, a vacuum gas source, and a first air guide channel; the first air guide channel is disposed inside the base plate, and A first air guide channel is provided in contact with the non-adsorption surface of the porous ceramic chuck, and the first end of the first air guide channel is in communication with the pores exposed on the non-adsorption surface of the porous ceramic chuck. The two ends communicate with the vacuum gas source.

In an implementation form, a vacuum chamber is also included, which is also disposed inside the aforementioned base plate. A vacuum chamber is provided, and the vacuum chamber is disposed between the first air guide channel and the vacuum gas source.

In an implementation form, it also includes an adsorption area adjustment element disposed between the aforementioned base plate and the porous ceramic chuck, the adsorption area adjustment element covers a part of pores on the non-adsorption surface of the porous ceramic chuck, and the first air guide channel The first end is in communication with the unobstructed air holes on the non-adsorption surface of the porous ceramic sucker.

In an implementation form, a driving element is also included, and the driving element is configured to drive the adsorption region adjusting element to adjust the area of the air holes blocked on the non-adsorption surface of the porous ceramic chuck.

In an implementation form, the adsorption area adjusting element includes a plurality of shutter blades rotatable about an axis, and the driving element is configured to drive the plurality of shutter blades to rotate about an axis to change the number of blocked air holes.

In an implementation form, a second air guide channel is provided in the adsorption area adjustment element, and a first end of the second air guide channel is in communication with at least a part of air holes in a blocking area of the adsorption area adjustment element. The second end of the air passage is in communication with a positive pressure air supply source.

In a second aspect, the present invention further provides a wafer bonding system, which includes a bonding hand, a stage, a bonding stage, and at least one wafer adsorption device according to any one of the first aspects provided on the aforementioned stage.

In an implementation form, a turntable is also included, and a plurality of the bonding hands are disposed on the turntable; the carrier is a turntable structure, and a plurality of the wafer adsorption devices are disposed on the carrier; When the first bonding hand picks up a wafer from the wafer adsorption device, A second bonding hand of a plurality of the aforementioned bonding hands places the wafer on a bonding table.

In one embodiment, the plurality of wafer adsorption devices are distributed on the carrier at equal intervals along a circumference concentric with the carrier.

The invention uses a base plate, a porous ceramic suction cup located on the base plate, and a vacuum gas source, and communicates the vacuum gas source with the pores exposed on the non-adsorption surface of the porous ceramic through a first air guide channel, thereby avoiding that a single-hole suction cup can only adsorb For wafers of a specific size, when the wafer size changes, the stage needs to be replaced to achieve effective adsorption of wafers of different sizes, to improve the utilization rate of the stage and the efficiency of the wafer bonding system; and, the pore size in porous ceramics Smaller, there is no single hole sucker with larger hole diameter, which requires high precision for wafer placement position, which can reduce the precision requirement for wafer placement position, thereby increasing the moving speed and placement speed of picking hands and bonding hands, and improving work efficiency.

11‧‧‧base plate

12‧‧‧ Porous Ceramic Sucker

13‧‧‧Vacuum source

14‧‧‧Adsorption zone adjustment element

15‧‧‧Drive element

100‧‧‧ Bonded Hands

111‧‧‧ the first air channel

112‧‧‧Vacuum chamber

141‧‧‧shutter blade

142‧‧‧second air guide channel

143‧‧‧Positive pressure cavity

144‧‧‧Positive pressure air supply

200‧‧‧ carrier

300‧‧‧ Bonding Table

400‧‧‧ Wafer adsorption device

500‧‧‧Chip

600‧‧‧ Turntable

[Fig. 1] A schematic structural diagram of a wafer adsorption device according to a first embodiment of the present invention.

[Fig. 2] A schematic structural diagram of a porous ceramic chuck according to the first embodiment of the present invention.

[Fig. 3] A schematic structural diagram of another wafer adsorption device provided by Embodiment 1 of the present invention.

[Fig. 4] A schematic structural diagram of a wafer adsorption device according to a second embodiment of the present invention.

[Fig. 5] A schematic structural diagram of another wafer adsorption device provided by Embodiment 2 of the present invention.

[Fig. 6] A schematic structural diagram of still another wafer adsorption device provided by Embodiment 2 of the present invention.

[Fig. 7] A schematic cross-sectional structure view of the wafer adsorption device in Fig. 6 along a section line AA '.

[Fig. 8] A schematic structural view showing another state of the wafer adsorption device in Fig. 6. [Fig.

[Fig. 9] A schematic structural diagram of another wafer adsorption device provided by Embodiment 2 of the present invention.

[Fig. 10] A schematic cross-sectional structure view of the wafer adsorption device in Fig. 9 along a section line BB '.

[FIG. 11] A schematic diagram showing a structure of a wafer bonding system provided by Embodiment 3 of the present invention.

[Fig. 12] A schematic diagram showing the structure of another wafer bonding system provided by Embodiment 3 of the present invention.

Example one

FIG. 1 shows a schematic structural diagram of a wafer adsorption device provided in Embodiment 1 of the present invention. Referring to FIG. 1, the wafer adsorption device includes: a base plate 11, a porous ceramic chuck 12 located on the base plate, a vacuum gas source 13, and a first air guide channel. 111; the aforementioned first air guide channel 111 is disposed inside the base plate 11 and is in contact with the non-adsorption surface of the porous ceramic chuck 12, and the first end of the first air guide channel 111 communicates with the pores exposed on the non-adsorption surface of the porous ceramic chuck 12, Number one of the first air guiding channel 111 The two ends are in communication with the vacuum gas source 13.

FIG. 2 is a schematic structural diagram of a porous ceramic chuck according to the first embodiment of the present invention. Referring to FIG. 2, the porous ceramic chuck 12 includes pores with a pore size on the order of micrometers, and the pores communicate with each other. The air guiding channel 111 provides a vacuum suction force for the porous ceramic chuck 12, and the porous structure in the porous ceramic chuck 12 can adsorb wafers of different sizes. In one embodiment, a porous ceramic chuck having a pore size of 2 to 20 μm can be selected; porous The fine and dense porous structure in ceramics can ensure that the wafers are attracted to the same strength at different positions of the chuck, so that the wafer placement position does not have excessively high accuracy requirements, and can be located at any position of the porous ceramic chuck.

The wafer adsorption device provided in the first embodiment of the present invention adopts a base plate, a porous ceramic sucker located on the base plate, and a vacuum gas source, and the air holes exposed by the vacuum gas source and the non-adsorption surface of the porous ceramic through the first air guide channel. Communication, to avoid that single-hole suckers can only adsorb specific size wafers. When the wafer size changes, the carrier needs to be replaced accordingly. Effective adsorption of wafers of different sizes is achieved, which improves the utilization of the carrier and the efficiency of the wafer bonding system. In addition, the pore size in porous ceramics is small and dense. There is no single hole sucker with a large hole size for the high precision of the wafer placement position, which can reduce the precision requirement of the wafer placement position, thereby improving the picking hands and bonding hands. Move speed and placement speed, improve work efficiency.

FIG. 3 shows a schematic structural diagram of another wafer adsorption device according to the first embodiment of the present invention. Referring to FIG. 3, optionally, a vacuum chamber 112 is also provided inside the base plate 11, and the vacuum chamber 112 is disposed in the first air guiding channel and the vacuum gas. Between sources.

Among them, the vacuum chamber 112 can be used as a buffer space for the vacuum of the vacuum gas source 13 and the porous ceramic suction cup 12 to prevent the porous ceramic suction cup from being suddenly turned on and off suddenly. 12 Instantly has a strong adsorption force or instantaneously loses the adsorption force on the wafer placed on the chuck, which can effectively avoid the situation of the wafer out of control in a sudden situation such as power failure.

Example two

The vacuum control method in the prior art generally adopts a method in which all the air holes of the suction cup are evacuated when the suction device is used to adsorb the wafer. This vacuum control method is likely to cause the suction of dust impurities in the area where the suction cup is not covered by the wafer, affecting the adsorption of other larger-sized wafers. Effect, reducing the life of the wafer adsorption device, and increasing the difficulty of cleaning.

FIG. 4 shows a schematic structural diagram of a wafer adsorption device provided in Embodiment 2 of the present invention. Referring to FIG. 4, the vacuum adsorption device includes: a base plate 11, a porous ceramic chuck 12 and a vacuum gas source 13 located on the base plate; The first air guide channel 111 in contact with the non-adsorption surface of the porous ceramic chuck 12, the first end of the first air guide channel 111 communicates with the pores exposed on the non-adsorption surface of the porous ceramic chuck 12, and the second The end is in communication with the vacuum gas source 13. The vacuum adsorption device also includes an adsorption region adjusting element 14 disposed between the base plate 11 and the porous ceramic sucker 12. The adsorption region adjusting element 14 shields a part of the air holes on the non-adsorption surface of the porous ceramic sucker, so that the first One end is in communication with the unshielded air holes on the non-adsorption surface of the porous ceramic chuck 12.

The adsorption area adjusting element 14 can be shielded from below the porous ceramic suction cup 12 by a baffle-type element, thereby forming a blocked invalid adsorption area. The first air guide channel 111 communicates with the pores of the unshielded area of the porous ceramic suction cup 12, A vacuum is provided by the vacuum gas source 13 to form an effective adsorption area, and the size of the effective adsorption area corresponds to the size of the wafer. Among them, the pores in the ineffective adsorption area of the porous ceramic chuck 12 are in a non-vacuum state. At this time, the pores in the non-vacuum state of the porous ceramic chuck 12 will not generate suction to the air, so dust and dirt in the air will not be sucked in. The pores in the effective adsorption area of the vacuum state are covered with wafers, so there is no possibility of dust inhalation.

The wafer adsorption device provided in the second embodiment of the present invention adopts a base plate, a porous ceramic sucker located on the base plate, and a vacuum gas source, and the air holes exposed by the vacuum gas source and the non-adsorption surface of the porous ceramic through the first air guide channel. Communication, to avoid that single-hole suckers can only adsorb specific size wafers. When the wafer size changes, the carrier needs to be replaced accordingly. Effective adsorption of wafers of different sizes is achieved, which improves the utilization of the carrier and the efficiency of the wafer bonding system. In addition, the pore size in porous ceramics is small and dense. There is no single hole sucker with a large hole size for the high precision of the wafer placement position, which can reduce the precision requirement of the wafer placement position, thereby improving the picking hands and bonding hands. Move speed and placement speed, improve work efficiency. In addition, the adsorption area adjustment element provided between the base plate and the porous ceramic chuck can block the uncovered area of the wafer and form an invalid adsorption area to prevent the uncovered area of the porous ceramic chuck from adsorbing dust and impurities in a vacuum state to reach the load. The purpose of exempting the platform from replacement, reducing the difficulty of cleaning, and extending the service life of the platform.

FIG. 5 shows a schematic structural diagram of another wafer adsorption device provided in Embodiment 2 of the present invention. Referring to FIG. 5, optionally, the wafer adsorption device also includes a driving element 15, and the driving element 15 is configured to drive the adsorption region adjusting element 14 to Adjust the area of the blocked pores on the non-adsorption surface of the porous ceramic chuck 12.

The driving element 15 can perform automatic control on the adsorption area adjustment element. By adjusting at least one of the adsorption area adjustment elements 14, the blocked area of the porous ceramic chuck 12 is changed, and the number of pores in the porous ceramic chuck is changed.

In one embodiment, the adsorption area adjusting element includes a plurality of shutter blades capable of rotating about an axis, and the driving element is configured to drive the plurality of shutter blades to rotate about an axis to change the number of air holes to be blocked. Head. FIG. 6 is a schematic structural diagram of another wafer adsorption device provided in Embodiment 2 of the present invention. FIG. 7 is a schematic cross-sectional structure diagram of the wafer adsorption device along the section line AA ′ in FIG. 6. Referring to FIGS. 6 and 7, the wafer adsorption The adsorption area adjusting element 14 in the device includes seven shutter blades 141. The shutter blades 141 can rotate around the axis. The driving element 15 can automatically control the shutter blades to rotate around the axis. The blocking area of the shutter blade 141 on the porous ceramic suction cup is changed, thereby changing the porosity The area of the effective adsorption area in the center of the ceramic chuck 11, wherein the channel opening of the first air guide channel 111 inside the base plate 11 and the porous ceramic chuck 12 can be set at the center of the porous ceramic chuck 12. FIG. 8 is a schematic structural diagram of another state of the wafer adsorption device in FIG. 6. Referring to FIG. 8, the driving element 15 adjusts the shutter blade 141 to rotate around the axis, thereby reducing the effective adsorption area of the porous ceramic chuck 12. In an embodiment, in the wafer adsorption device shown in FIGS. 6 to 8, the shutter blade 141 is located below the porous ceramic chuck, and the shutter blade 141 in FIG. 6 and FIG. 8 is only used to conveniently indicate the unshielded area of the porous ceramic chuck. , Does not represent structural features.

In one embodiment, a second air guide channel is provided in the adjustment element of the adsorption area, and the first end of the second air guide channel is in communication with at least part of the air holes in the area blocked by the adjustment element of the adsorption area. The end is in communication with a positive pressure air supply source. Optionally, the positive-pressure air supply source is a positive-pressure air source.

FIG. 9 is a schematic structural diagram of another wafer adsorption device according to the second embodiment of the present invention. FIG. 10 is a schematic structural diagram of the wafer adsorption device along the section line BB ′ in FIG. 9. Referring to FIG. 9 and FIG. There is a second air guide channel 142, which is in communication with the positive pressure air supply source 144, and provides positive pressure to the air holes in the area of the porous ceramic suction cup 12 blocked by the shutter blade 141. In one embodiment, a positive pressure cavity 143 is provided inside the shutter blade, and is configured to buffer the positive pressure.

The positive pressure air supply source 144 provides positive pressure to the area covered by the shutter blade 141 in the porous ceramic suction cup 12 through the second air guide channel 142. When the opening of the shutter blade 141 changes, the positive pressure of the positive pressure air supply source 144 is covered. The area of the porous ceramic chuck 12 changes simultaneously. The area blocked by the shutter blade 141 can ensure that particles such as dust will not enter the fine pores in the area of the porous suction cup 12 covered by the blade by the positive pressure. In addition, when the shutter blade 141 completely shields the non-adsorption surface of the porous ceramic suction cup 12 and at the same time passes a positive pressure from the second air guide channel 142 in the shutter blade 141, the air holes in the porous ceramic suction cup 12 can be blown. The purpose of cleaning the porous ceramic suction cup 12 can be achieved to a certain extent. In one embodiment, the second air guide channel 142 may be disposed on the rotation shaft of the shutter blade 141, and communicates with the positive pressure air supply source 144 through the second air guide channel 142 in the rotation shaft.

Example three

FIG. 11 is a schematic structural diagram of a wafer bonding system according to a third embodiment of the present invention. Referring to FIG. 11, the wafer bonding system includes: a bonding hand 100, a carrier 200, a bonding station 300, and At least one wafer adsorption device 400 as in any of the above embodiments. The wafer 500 is adsorbed on the stage 200 by the wafer adsorption device 400.

The following describes the working process of the wafer bonding system with reference to FIGS. 1 and 11. First, the stage 200 is moved to the transfer position, and a picker (not shown) places the wafer 500 on the wafer adsorption device of the stage 200. On 400, the vacuum gas source 13 in the wafer adsorption device 400 is activated, and a vacuum is provided to the porous ceramic chuck 12 through the second air guide channel 111. The porous ceramic chuck 12 is equipped with a suction suction wafer 500 in a vacuum state and fixed; 200 moves to the measurement position in series to perform wafer 500 position measurement. Then, the stage 200 moves to the wafer fetch position in series, and the bonding hand 100 takes the wafer 500 downward. When the bonding hand 100 reports the position of the wafer according to the measured wafer position, After the wafer 500 is accurately grasped, the vacuum source 13 releases the vacuum and provides positive pressure. The porous ceramic chuck 12 provides upward force to the wafer 500 under the positive pressure state, assists the wafer 500 to disengage, and the bonding hand 100 moves upward. The wafer 500 is passed to the bonding station 300 to complete the bonding process.

The wafer bonding system provided in the third embodiment of the present invention adopts a wafer adsorption device composed of a base plate, a porous ceramic chuck on the base plate, and a vacuum gas source. The pores exposed on the suction surface are connected to avoid single-hole chucks that can only adsorb wafers of a specific size. When the wafer size changes, the carrier needs to be replaced correspondingly. Effective adsorption of wafers of different sizes is achieved, and the utilization of the carrier is improved. The efficiency of the wafer bonding system; moreover, the pore size in the porous ceramics is small, and there is no single hole sucker with a large hole size for the high precision of the wafer placement position, which can reduce the precision requirement of the wafer placement position, thereby improving the picking hand and The moving speed and placement speed of the bonding hands improve the work efficiency.

FIG. 12 is a schematic structural diagram of another wafer bonding system provided by Embodiment 3 of the present invention. Referring to FIG. 12, in an embodiment, the wafer bonding system also includes a turntable 600, and a plurality of bonding hands 100 are disposed on the turntable 600. ; The stage 200 is a turntable structure, and a plurality of wafer adsorption devices 400 are provided on the stage 200; when one bonding hand 100 picks up a wafer from the wafer adsorption device 400, the other bonding hand 100 places the wafer on the bonding table . In one embodiment, a plurality of wafer adsorption devices 400 are distributed on the stage 200 at equal intervals along a circumference concentric with the stage 200.

Referring to FIG. 12, when the wafer bonding system is in operation, it is not necessary to perform serial movement of the stage 200, only the rotation alignment of the turntable 600 and the stage 200 of the turntable structure, and the rotation alignment of the turntable 600 and the bonding stage. The bonding hand 100 on the turntable 600 picks up the wafer on the aligned wafer adsorption device 400 and places it on the aligned bonding table to perform the bonding process. The wafer bonding system can reduce the wafer picking time To improve the efficiency of wafer placement Tablet bonding efficiency.

Claims (9)

A wafer adsorption device is characterized in that it comprises: a base plate, a porous ceramic chuck on the aforementioned base plate, a vacuum gas source, and a first air guide channel; wherein the first air guide channel is provided inside the base plate and is porous with the aforementioned porous plate; The ceramic suction cup is in contact with the non-adsorption surface, the first end of the first air guide channel is in communication with the pores exposed on the non-adsorption surface of the porous ceramic chuck, and the second end of the first air guide channel is in communication with the vacuum air source. The adsorption device according to item 1 of the scope of patent application, further comprising a vacuum chamber provided inside the base plate, and the vacuum chamber is provided between the first air guide channel and the vacuum gas source. The adsorption device described in item 1 of the scope of the patent application, further comprising an adsorption region adjusting element disposed between the aforementioned substrate and the porous ceramic chuck, and the adsorption region adjusting element blocking a portion on the non-adsorption surface of the porous ceramic chuck. The pores, the first end of the first air guide channel communicates with the unshielded pores on the non-adsorption surface of the porous ceramic chuck. The adsorption device according to item 3 of the patent application scope, further comprising a driving element, the driving element is configured to drive the adsorption region adjusting element to adjust an area of the blocked air holes on the non-adsorption surface of the porous ceramic chuck. The adsorption device according to item 4 of the scope of the patent application, wherein the adsorption area adjusting element includes a plurality of shutter blades rotatable about an axis, and the driving element is configured to drive a plurality of the shutter blades to rotate about an axis to change an air hole to be blocked. number. The adsorption device according to any one of items 3 to 5 of the scope of application for a patent, wherein the adsorption zone adjusting element is provided with a second gas guide channel, and the first end of the second gas guide channel and the foregoing At least part of the air holes in the blocking area of the adsorption area adjusting element are in communication, and the second end of the aforementioned second air guiding channel is in communication with the positive pressure air supply source. A wafer bonding system is characterized in that it includes a bonding hand, a stage, a bonding stage, and at least one of the wafer adsorption devices described in any one of items 1 to 6 of the scope of the patent application. The wafer bonding system described in item 7 of the scope of patent application, further comprising a turntable, and a plurality of the aforementioned bonding hands are provided on the aforementioned turntable; the aforementioned stage is a turntable structure, and the aforementioned stage is provided with a plurality of the aforementioned wafers Adsorption device; when a first bonding hand of the plurality of bonding hands picks up a wafer from the wafer adsorption device, a second bonding hand of the plurality of bonding hands places the wafer on a bonding table. The wafer bonding system according to item 8 of the scope of the patent application, wherein the plurality of wafer adsorption devices are distributed on the carrier at an equal interval along a circumference concentric with the carrier.