TW201933642A - 有機半導體元件 - Google Patents

有機半導體元件 Download PDF

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TW201933642A
TW201933642A TW107140605A TW107140605A TW201933642A TW 201933642 A TW201933642 A TW 201933642A TW 107140605 A TW107140605 A TW 107140605A TW 107140605 A TW107140605 A TW 107140605A TW 201933642 A TW201933642 A TW 201933642A
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patterned mask
conductor
layer
organic semiconductor
organic
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TW107140605A
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派翠克 圖
赫維 凡德克霍夫
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英商弗萊克英納寶有限公司
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Publication of TW201933642A publication Critical patent/TW201933642A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)

Abstract

一種技術，其包含：形成一圖案化遮罩於一有機半導體層上；使用該圖案化遮罩圖案化一層於該有機半導體層上；暴露該圖案化遮罩於使得該圖案化遮罩可溶於一溶劑的輻射；然後，使用該溶劑溶解掉該圖案化遮罩。

Description

有機半導體元件
本發明係有關於有機半導體元件。
有機半導體元件通常包含包括至少一有機半導體層的一層堆疊。該等層的圖案化通常使用在沉積下一層之前會被移除的圖案化光阻遮罩。剝除劑在單一步驟製程中用來以化學反應來移除圖案化光阻遮罩。
本發明的發明人已發現，剝除劑在用來移除圖案化光阻遮罩時對有機半導體元件的效能可能有負面影響，該圖案化光阻遮罩係用來圖案化層堆疊中在有機半導體層上方的一層。
特此提供一種方法，其包含：形成一圖案化遮罩於一有機半導體層上；使用該圖案化遮罩圖案化一層於該有機半導體層上；暴露該圖案化遮罩於使得該圖案化遮罩可溶於一溶劑的輻射；然後，使用該溶劑溶解掉該圖案化遮罩。
根據一具體實施例，該圖案化遮罩可藉由與一有機胺化合物的化學反應來移除。
根據一具體實施例，該有機胺化合物為一胺醇。
根據一具體實施例，該胺醇為乙醇胺。
根據一具體實施例，該圖案化遮罩包含一交聯甲酚-甲醛型聚合物。
根據一具體實施例，該方法包含：使用該圖案化遮罩圖案化一導體層以產生界定用於一頂閘極電晶體陣列之一閘極導體陣列的一導體圖案。
根據一具體實施例，該方法包含：使用該圖案化遮罩圖案化一導體層以產生界定一導體陣列的一導體圖案，各個導體各自與在該有機半導體層下方之一下方導體圖案的一導件接觸。
下述具體實施例為用於生產頂閘極電晶體陣列的實施例，但是相同技術同樣可應用於其他類型之電晶體或電晶體陣列的生產，或包括含有一或多個有機半導體層之層堆疊的其他類型元件之生產。
再者，下述具體實施例為在生產頂閘極電晶體陣列時用於形成閘極導體圖案及/或像素導體圖案的實施例，但是相同技術同樣可應用於在高於有機半導體的任何位準形成其他導體圖案。
在一示範具體實施例中，該技術用於生產包含用於控制組件之有機電晶體元件(例如，有機薄膜電晶體(OTFT)元件)的有機液晶顯示器(OLCD)元件。OTFT包含半導體通道的有機半導體(例如，有機聚合物或小分子半導體)。
圖1(a)至圖1(g)圖示工件W始於平台的加工，在此其包含支撐一層堆疊的支撐膜2，例如塑膠支撐膜，該層堆疊包括界定用於電晶體陣列之源極及汲極導體之源極-汲極導體圖案6，提供電晶體陣列之半導體通道的有機半導體材料(例如，有機聚合物半導體)8之圖案化或未圖案化層，與提供電晶體陣列之閘極電介質的一或多個電絕緣電介質層10。
在閘極電介質10上面，沉積包括至少一層導體材料的導體材料連續層12或連續層堆疊12於工件W上。例如，一層金屬或金屬合金或金屬/金屬合金層堆疊可沉積於工件W上，例如用氣相沉積製程，例如濺鍍。
然後，在一或多個導體層12上面形成圖案化遮罩14於工件W上。圖案化遮罩14例如可用光刻技術形成。
然後，通過圖案化遮罩14蝕刻導體層或堆疊12以產生界定閘極導體17陣列的閘極導體圖案16，該等閘極導體17提供電晶體陣列的閘極電極。
然後，工件W經受大量涌入的紫外線曝光致使整個圖案化遮罩14可溶於溶劑，且浸入溶劑池以溶解掉圖案化遮罩14。
然後，在閘極導體圖案16上面形成電絕緣材料連續層18或絕緣材料連續層堆疊18於工件W上，且予以圖案化以界定向下延伸到源極-汲極導體圖案6之各個汲極導體的通孔20。用語源極導體在此用來指延伸到電晶體陣列邊緣的導體用以連接至例如驅動器晶片之晶片的端子，且用語汲極導體在此用來指經由電晶體之半導體通道連接至晶片端子的導體。
然後，在絕緣層/堆疊22上面形成包括至少一導體層的導體材料連續層22或連續層堆疊22於工件W上。例如，一層金屬或金屬合金或金屬/金屬合金層堆疊可沉積於工件W上，例如用氣相沉積製程，例如濺鍍。
然後，在導體層/堆疊上面形成圖案化遮罩24於工件W上。圖案化遮罩24例如可用光刻技術形成。
然後，通過圖案化遮罩24蝕刻導體層/堆疊22以產生界定像素導體27陣列的像素導體圖案26，像素導體27各自經由通孔20接觸源極/汲極導體圖案6的各個汲極導體。
然後，工件W經受大量涌入的紫外線曝光致使整個圖案化遮罩24可溶於溶劑，且浸入溶劑池以溶解掉圖案化遮罩24。
已發現，相較於(a)使用包含乙醇胺之剝除劑以化學反應來移除兩種圖案化遮罩的對照實驗與(b)根據上述技術移除用於產生閘極導體圖案之圖案化遮罩但是使用包含乙醇胺之剝除劑以化學反應來移除用於產生像素導體圖案之圖案化遮罩的對照實驗兩者，該電晶體陣列用此技術展現更好的效能。
除了明確描述於上文的任何修改以外，顯然熟諳此藝者明白上述具體實施例可做出各種其他修改而不脫離本發明的範疇。
本案申請人特此孤立地揭露描述於本文的各個個別特徵與兩個或多個此類特徵的任何組合，只要能夠按照熟諳此藝者的常見一般知識基於整個本說明書來實施此類特徵或組合，而不管此類特徵或特徵組合是否解決揭露於本文的任何問題，且不限制請求項的範疇。本案申請人表明本發明的方面可由任何此類個別特徵或特徵組合組成。
2‧‧‧支撐膜
6‧‧‧源極-汲極導體圖案
8‧‧‧有機半導體材料
10‧‧‧電絕緣電介質層
12‧‧‧連續層
14‧‧‧圖案化遮罩
16‧‧‧閘極導體圖案
17‧‧‧閘極導體
18‧‧‧連續層
20‧‧‧通孔
22‧‧‧連續層
24‧‧‧圖案化遮罩
26‧‧‧像素導體圖案
27‧‧‧像素導體
W‧‧‧工件
以下僅以舉例說明的方式詳述本發明的一具體實施例，其中：
圖1(a)至圖1(g)根據本發明之一具體實施例圖示一技術實施例；與
圖2圖示用於圖1(a)至圖1(g)技術之元件架構的一實施例。

Claims (7)

  1. 一種方法，其包含：於一有機半導體層上形成一圖案化遮罩；使用該圖案化遮罩以於該有機半導體層上圖案出一層；使該圖案化遮罩暴露於輻射，該輻射可使該圖案化遮罩溶於一溶劑；然後，使用該溶劑來溶解去掉該圖案化遮罩。
  2. 如請求項1之方法，其中該圖案化遮罩可藉由與一有機胺化合物的化學反應來移除。
  3. 如請求項2之方法，其中該有機胺化合物為一胺醇。
  4. 如請求項3之方法，其中該胺醇為乙醇胺。
  5. 如請求項1至4中之任一項的方法，其中該圖案化遮罩包含一交聯甲酚-甲醛型聚合物。
  6. 如請求項1至5中之任一項的方法，其包含：使用該圖案化遮罩來圖案出一導體層以產生一導體圖案，該導體圖案界定用於一頂閘極電晶體陣列之一閘極導體陣列。
  7. 如請求項1至5中之任一項的方法，其包含：使用該圖案化遮罩來圖案出一導體層以產生一導體圖案，該導體圖案界定一導體陣列，各個導體各自與在該有機半導體層下方之一下方導體圖案的一導件接觸。
TW107140605A 2017-11-17 2018-11-15 有機半導體元件 TW201933642A (zh)

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GB1719082.8A GB2568516A (en) 2017-11-17 2017-11-17 Organic semiconductor devices
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US6617186B2 (en) * 2000-09-25 2003-09-09 Dai Nippon Printing Co., Ltd. Method for producing electroluminescent element
KR100611652B1 (ko) * 2004-06-28 2006-08-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
CN100557514C (zh) * 2005-11-08 2009-11-04 比亚迪股份有限公司 一种光阻显影液
JP4773562B2 (ja) * 2006-05-26 2011-09-14 エルジー・ケム・リミテッド フォトレジスト用ストリッパー組成物
JP4293467B2 (ja) * 2006-09-28 2009-07-08 国立大学法人京都大学 有機材料装置の製造方法
KR101399281B1 (ko) * 2007-06-29 2014-05-26 주식회사 동진쎄미켐 유기박막 트랜지스터용 감광성 수지 조성물
KR102104356B1 (ko) * 2012-12-24 2020-04-24 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법

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WO2019096731A1 (en) 2019-05-23
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CN111344877A (zh) 2020-06-26
GB2568516A (en) 2019-05-22

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