CN111344877A - 制造有机半导体元件的方法 - Google Patents

制造有机半导体元件的方法 Download PDF

Info

Publication number
CN111344877A
CN111344877A CN201880073655.8A CN201880073655A CN111344877A CN 111344877 A CN111344877 A CN 111344877A CN 201880073655 A CN201880073655 A CN 201880073655A CN 111344877 A CN111344877 A CN 111344877A
Authority
CN
China
Prior art keywords
mask
conductor
patterning
organic semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880073655.8A
Other languages
English (en)
Inventor
派翠克·图
赫维·凡德克霍夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fleck Innabur Technology Co ltd
Original Assignee
Plastic Logic Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plastic Logic Ltd filed Critical Plastic Logic Ltd
Publication of CN111344877A publication Critical patent/CN111344877A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种技术，其包含：于有机半导体层上形成图案化遮罩；使用所述图案化遮罩以于所述有机半导体层上图案化一个层；使所述图案化遮罩暴露于辐射，所述辐射使得所述图案化遮罩可溶于溶剂；然后，使用所述溶剂来溶解去掉所述图案化遮罩。

Description

制造有机半导体元件的方法
背景技术
有机半导体元件典型地包含多层的堆叠体，所述多层的堆叠体包括至少一个有机半导体层。所述多层的图案化典型地使用在沉积下一层之前会被移除的图案化光阻遮罩。剥除剂(stripping agent)在单一步骤制程中被使用以通过化学反应来移除所述图案化光阻遮罩。
发明内容
本发明的发明人已发现，剥除剂在用于移除图案化光阻遮罩时对于有机半导体元件的效能具有负面影响，所述图案化光阻遮罩被用于图案化多层的堆叠体中位在有机半导体层上方的一个层。
特此提供一种方法，其包含：于有机半导体层上形成图案化遮罩；使用所述图案化遮罩以于所述有机半导体层上图案化一个层；使所述图案化遮罩暴露于辐射，所述辐射使得所述图案化遮罩可溶于溶剂；然后，使用所述溶剂溶解去掉所述图案化遮罩。
根据一实施例，所述图案化遮罩可通过与有机胺化合物的化学反应来移除。
根据一实施例，所述有机胺化合物为氨基醇(amino alcohol)。
根据一实施例，所述氨基醇(amino alcohol)为氨基乙醇(amino ethanol)。
根据一实施例，所述图案化遮罩包含交联甲酚甲醛型聚合物。
根据一实施例，所述方法包含：使用所述图案化遮罩来图案化导体层以产生导体图案，所述导体图案界定用于顶栅极晶体管阵列的栅极导体阵列。
根据一实施例，所述方法包含：使用所述图案化遮罩来图案化导体层以产生导体图案，所述导体图案界定导体阵列，各个导体与在所述有机半导体层下方的下方导体图案的相应导体件接触。
附图说明
以下以仅为举例说明的方式详述本发明的实施例，其中：
图1(a)至图1(g)示出根据本发明的实施例的技术的实施例；与
图2示出用于图1(a)至图1(g)的技术的元件架构的一个范例。
具体实施方式
下述实施例为用于生产顶栅极晶体管阵列的范例，但是相同技术同样可应用于其他类型的晶体管或晶体管阵列的生产，或包括多层的堆叠体的其他类型元件的生产，所述多层的堆叠体含有一或多个有机半导体层。
再者，下述实施例为在生产顶栅极晶体管阵列中用于形成栅极导体图案及/或像素导体图案的范例，但是相同技术同样可应用于在任何高于有机半导体的位准上形成其他导体图案。
在一示范实施例中，所述技术用于生产包含用于控制组件的有机晶体管元件(例如，有机薄膜晶体管(OTFT)元件)的有机液晶显示器(OLCD)元件。OTFT包含用于半导体通道的有机半导体(例如，有机聚合物或小分子半导体)。
图1(a)至图1(g)显示工件W始于平台的加工，其中所述工件包含支撑多层的堆叠体的支撑膜2，例如塑料支撑膜，所述多层的堆叠体包括界定用于晶体管阵列的源极及漏极导体的源极-漏极导体图案6，为晶体管阵列提供半导体通道的有机半导体材料(例如，有机聚合物半导体)8的图案化或未图案化的层，与为晶体管阵列提供栅极电介质的一或多个电绝缘电介质层10。
于工件W上，栅极电介质10的上方，沉积一个导体材料的连续层12或包括至少一个导体材料的多个连续层的堆叠体12。例如，一个金属或金属合金层或多个金属/金属合金层的堆叠体可通过例如气相沉积制程，诸如溅镀，来沉积于工件W上。
然后，于工件W上，一或多个导体层12的上方形成图案化遮罩14。图案化遮罩14可例如通过光刻技术来形成。
然后，通过图案化遮罩14蚀刻导体层或堆叠体12以产生界定栅极导体阵列17的栅极导体图案16，所述栅极导体阵列17为晶体管阵列提供栅极电极。
然后，使工件W经受大量紫外线曝光以致使整个图案化遮罩14可溶于溶剂，且浸入溶剂池中以溶解去掉图案化遮罩14。
然后，于工件W上，栅极导体图案16的上方形成一个电绝缘材料的连续层18或多个绝缘材料的连续层的堆叠体18，且予以图案化以界定向下延伸到源极-漏极导体图案6的各个漏极导体的通孔20。用语源极导体在此用来指延伸到晶体管阵列边缘以供连接至例如驱动器芯片的芯片的端子的导体，且用语漏极导体在此用来指经由晶体管的半导体通道而连接至芯片的端子的导体。
然后，于工件W上，绝缘层/堆叠体22的上方形成一个导体材料的连续层22或包括至少一个导体层的多个连续层的堆叠体22。例如，一个金属或金属合金层或多个金属/金属合金层的堆叠体可通过例如气相沉积制程，诸如溅镀，来沉积于工件W上。
然后，于工件W上，导体层/堆叠体的上方形成图案化遮罩24。图案化遮罩24可例如通过光刻技术来形成。
然后，透过图案化遮罩24来蚀刻导体层/堆叠体22以产生界定像素导体27阵列的像素导体图案26，像素导体27各自经由通孔20接触源极/漏极导体图案6的相应漏极导体。
然后，工件W经受大量紫外线曝光以致使整个图案化遮罩24可溶于溶剂，且浸入溶剂池中以溶解去掉图案化遮罩24。
已发现，相较于(a)使用包含氨基乙醇(aminoethanol)的剥除剂以化学反应来移除两种图案化遮罩的对照实验与(b)根据上述技术来移除用于产生栅极导体图案之图案化遮罩但是使用包含氨基乙醇(amino ethanol)之剥除剂以化学反应来移除用于产生像素导体图案之图案化遮罩的对照实验两者，所述晶体管阵列用此技术展现更好的效能。
除了明确描述于上文的任何修改以外，本领域的技术人员显然可以明白，可在本发明的范畴内对上述实施例做出各种其他修改。
本案申请人特此独立地揭露本文描述的各个个别特征与两个或多个此类特征的任何组合，达到了基于本案说明书整体并按照本领域的技术人员的常见一般知识能够实施此类特征或组合的程度，而不论此类特征或特征组合是否解决本文揭露的任何问题，且对权利要求的范畴不造成限制。本案申请人表明本发明的态样可由任何此类个别特征或特征的组合所组成。

Claims (7)

1.一种方法，其特征在于：所述方法包含：于有机半导体层上形成图案化遮罩；使用所述图案化遮罩以于所述有机半导体层上图案化一个层；使所述图案化遮罩暴露于辐射，所述辐射使得所述图案化遮罩可溶于溶剂；然后，使用所述溶剂来溶解去掉所述图案化遮罩。
2.根据权利要求1所述的方法，其特征在于：所述图案化遮罩可通过与有机胺化合物的化学反应来移除。
3.根据权利要求2所述的方法，其特征在于：所述有机胺化合物为氨基醇(aminoalcohol)。
4.根据权利要求3所述的方法，其特征在于：所述氨基醇为氨基乙醇(amino ethanol)。
5.根据前述任一权利要求所述的方法，其特征在于：所述图案化遮罩包含交联甲酚甲醛型聚合物。
6.根据前述任一权利要求所述的方法，其特征在于：所述方法包含：使用所述图案化遮罩来图案化导体层以产生导体图案，所述导体图案界定用于顶栅极晶体管阵列的栅极导体阵列。
7.根据权利要求1至5中任一权利要求所述的方法，其特征在于：所述方法包含：使用所述图案化遮罩来图案化导体层以产生导体图案，所述导体图案界定导体阵列，各个导体与在所述有机半导体层下方的下方导体图案的相应导体件接触。
CN201880073655.8A 2017-11-17 2018-11-12 制造有机半导体元件的方法 Pending CN111344877A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1719082.8 2017-11-17
GB1719082.8A GB2568516A (en) 2017-11-17 2017-11-17 Organic semiconductor devices
PCT/EP2018/080913 WO2019096731A1 (en) 2017-11-17 2018-11-12 Method of manufacturing organic semiconductor devices

Publications (1)

Publication Number Publication Date
CN111344877A true CN111344877A (zh) 2020-06-26

Family

ID=60805462

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880073655.8A Pending CN111344877A (zh) 2017-11-17 2018-11-12 制造有机半导体元件的方法

Country Status (5)

Country Link
US (1) US20200335700A1 (zh)
CN (1) CN111344877A (zh)
GB (1) GB2568516A (zh)
TW (1) TW201933642A (zh)
WO (1) WO2019096731A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1963677A (zh) * 2005-11-08 2007-05-16 比亚迪股份有限公司 一种光阻显影液
WO2008038588A1 (fr) * 2006-09-28 2008-04-03 Rohm Co., Ltd. Procédé de fabrication d'appareil à matériau organique
CN101334587A (zh) * 2007-06-29 2008-12-31 东进世美肯株式会社 有机薄膜晶体管用感光性树脂组合物
CN101454872A (zh) * 2006-05-26 2009-06-10 Lg化学株式会社 用于光刻胶的剥离剂组合物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617186B2 (en) * 2000-09-25 2003-09-09 Dai Nippon Printing Co., Ltd. Method for producing electroluminescent element
KR100611652B1 (ko) * 2004-06-28 2006-08-11 삼성에스디아이 주식회사 유기 전계 발광 표시 소자 및 그 제조방법
KR102104356B1 (ko) * 2012-12-24 2020-04-24 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1963677A (zh) * 2005-11-08 2007-05-16 比亚迪股份有限公司 一种光阻显影液
CN101454872A (zh) * 2006-05-26 2009-06-10 Lg化学株式会社 用于光刻胶的剥离剂组合物
WO2008038588A1 (fr) * 2006-09-28 2008-04-03 Rohm Co., Ltd. Procédé de fabrication d'appareil à matériau organique
CN101334587A (zh) * 2007-06-29 2008-12-31 东进世美肯株式会社 有机薄膜晶体管用感光性树脂组合物

Also Published As

Publication number Publication date
TW201933642A (zh) 2019-08-16
GB2568516A (en) 2019-05-22
GB201719082D0 (en) 2018-01-03
US20200335700A1 (en) 2020-10-22
WO2019096731A1 (en) 2019-05-23

Similar Documents

Publication Publication Date Title
US7858513B2 (en) Fabrication of self-aligned via holes in polymer thin films
US9466796B2 (en) Electronic device having thin film transistor using organic semiconductor and method of manufacturing the same
CN103560088B (zh) 阵列基板的制作方法
US20050272212A1 (en) Method of high precision printing for manufacturing organic thin film transistor
US20070052019A1 (en) Transistor device wiwth metallic electrodes and a method for use in forming such a device
CN111344877A (zh) 制造有机半导体元件的方法
US20200251657A1 (en) Conductor etching for producing thin-film transistor devices
US20060231407A1 (en) Method of fabricating TFT array substrate and metal layer thereof
CN112310148A (zh) 堆叠的图案化
US8001491B2 (en) Organic thin film transistor and method of fabricating the same
US20060240668A1 (en) Semiconductor device with metallic electrodes and a method for use in forming such a device
US8652964B2 (en) Method and apparatus for the formation of an electronic device
US20210217783A1 (en) Transistor arrays
CN111816767A (zh) 有机半导体晶体管
US20200313103A1 (en) Patterning semiconductor for tft device
US20200091449A1 (en) Forming dielectric for electronic devices
GB2574266A (en) Transistor Arrays
KR20190070180A (ko) 임프린트 리소그래피 공정을 이용한 산화물 트랜지스터의 제조 방법 및 이에 의해 제조된 임프린트 리소그래피 공정을 이용한 산화물 트랜지스터
KR20160021350A (ko) 박막 트랜지스터 기판의 제조 방법
KR20040102402A (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20230531

Address after: Britain Camb

Applicant after: Fleck Innabur Technology Co.,Ltd.

Address before: Britain Camb

Applicant before: PLASTIC LOGIC LTD.

WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200626