TW201908831A - Panel manufacturing method and array substrate - Google Patents

Abstract

A manufacturing method of a panel includes following steps. An array substrate including a polarizer pattern is provided. An alignment material layer is formed on the array substrate. A light source module is provided, wherein the polarizer pattern is disposed between the light source module and the alignment material layer, and light emitted by the light source module passes through the polarizer pattern so as to execute a photo alignment procedure to the alignment material laye. An array substrate is provided.

Description

Method for manufacturing panel and array substrate

The present invention relates to a method for manufacturing a panel, and more particularly, to a panel and an array substrate related to a light alignment technology.

In order to arrange the liquid crystal molecules in the display panel along a predetermined direction, an alignment process is often required in the process of manufacturing the display panel. In the alignment processing process, the brush-type alignment is liable to cause many problems such as dust and uneven stress. Therefore, the optical alignment process is another option. In the photo-alignment process, light is used to irradiate the alignment material layer on the substrate, so that the alignment material layer in a predetermined direction undergoes a chemical reaction to generate alignment. Therefore, the liquid crystal molecules that are subsequently filled can be aligned along the predetermined direction.

In the current optical alignment technology, it is necessary to use a polarizer on the optical alignment machine to polarize the light emitted by the light source module. However, because there is a distance between the optical alignment machine and the motherboard, the optical alignment path may generate some light. The alignment effect is not as expected due to errors, or if a splicing polarizer is used in the optical alignment machine, the amount of accumulated light at the splicing place is often insufficient, which may cause discontinuous alignment between regions at different times. defect.

At least one embodiment of the present invention provides a method for manufacturing a panel, which can solve the problem of insufficient light accumulation in some regions in the optical alignment technology.

At least one embodiment of the present invention provides an array substrate, which can solve the problem that alignment defects occur in some areas of the array substrate in the optical alignment technology.

At least one embodiment of the present invention provides a method for manufacturing a panel including the following steps: providing an array substrate including a polarizing pattern; forming an alignment material layer on the array substrate; providing a light source module, wherein the polarizing pattern is located on the light source module and the alignment material layer In between, the light emitted from the light source module passes through the polarizing pattern to perform light alignment on the alignment material layer.

At least one embodiment of the present invention provides an array substrate including a plurality of scan lines, a plurality of data lines, a plurality of active elements, a plurality of first electrodes, and a lower polarizing pattern. The plurality of active components are electrically connected to the scanning line and the data line, respectively. The lower polarizing pattern overlaps the first electrode, and the lower polarizing pattern has a plurality of parallel lower polarizing slits. One of the scan lines has a scan line slit and overlaps the lower polarized light pattern; and / or one of the data lines has a data line slit and overlaps the lower polarized light pattern.

At least one embodiment of the present invention provides an array substrate including a black matrix and an upper polarizing pattern. The black matrix includes a plurality of first slits. The upper polarizing pattern includes a plurality of upper polarizing slits, and the upper polarizing pattern overlaps the first slits of the black matrix.

One of the objects of the present invention is to eliminate the need for a polarizer on the light alignment machine.

One of the objects of the present invention is to solve the problem that the panel has alignment defects in some areas.

One of the objects of the present invention is to make the alignment of scanning lines and / or data lines better.

One of the objectives of the present invention is to enable a better alignment quality around the black matrix.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

The diagrams herein are only examples of parts of the invention. Therefore, the shape, number, and proportion of each element shown in the schematic diagram should not be used to limit the present invention. For example, the actual number, size, and shape of the polarizing patterns in the schematic diagram are only used for illustration, and do not mean that the actual number, size, and shape of the polarizing patterns of the present invention must be as shown in the figure.

FIG. 1A is a schematic top view of an array substrate 10 according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the line AA 'and a part of the peripheral region of the array substrate in FIG. 1A.

Please refer to FIG. 1A and FIG. 1B at the same time. The array substrate 10 includes a substrate B1, a shielding layer 100, a plurality of scan lines SL, a plurality of data lines DL, a plurality of active device TFTs, a plurality of first electrodes 140A, and a plurality of second electrodes. 140B, and the lower polarized pattern PL. In this embodiment, the array substrate 10 is, for example, an active element array substrate.

The shielding layer 100 is formed on the substrate B1. In one embodiment, the material of the substrate B1 may be glass, quartz, organic polymer, or other materials that can transmit light. In one embodiment, the material of the shielding layer 100 may be metal, alloy, oxide, black resin, or other materials with low light transmittance. In this embodiment, both the lower polarizing pattern PL and the shielding layer 100 are formed on the substrate B1 and are in contact with the substrate B1. In one embodiment, the lower polarizing pattern PL and the shielding layer 100 are formed at the same time, and the forming method is, for example, a nano-imprint process or an exposure etching process. In an embodiment, the lower polarization pattern PL includes, for example, a plurality of thin lines P1 parallel to each other, and the line width of these thin lines P1 is approximately between 25 nm and 125 nm. In one embodiment, the lower polarizing pattern PL may have a plurality of parallel lower polarizing slits P1O, and the width W1 of the lower polarizing slits P1O is between about 15 nm and 120 nm. In this embodiment, the thin lines P1 on the substrate B1 are all parallel to each other and extend in the same direction, but the invention is not limited thereto. In some embodiments, multiple pixel regions PR having different designs from each other, the thin lines P1 in the lower polarization pattern PL corresponding to the different pixel regions PR may have different extending directions.

The active device TFT is formed on the shielding layer 100. In one embodiment, an insulating layer 105 is sandwiched between the active device TFT and the shielding layer 100. The active device TFT includes a semiconductor layer 110, a gate insulating layer 115, a gate 120, a source 132, and a drain 134. The semiconductor layer 110 is formed on the insulating layer 105. The semiconductor layer 110 is a single-layer or multi-layer structure, which includes amorphous silicon, polycrystalline silicon, microcrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials (such as indium zinc oxide, indium germanium zinc oxide, or Other suitable materials, or combinations thereof), or other suitable materials, or containing dopants in the above materials or combinations thereof. The gate insulating layer 115 is formed on the semiconductor layer 110 and the insulating layer 105. The gate electrode 120 is formed on the gate insulation layer 115, and the gate insulation layer 115 is sandwiched between the semiconductor layer 110 and the gate electrode 120. The gate electrode 120 is electrically connected to the scan line SL. The source electrode 132 and the drain electrode 134 are formed on the semiconductor layer 110 and are electrically connected to the semiconductor layer 110. In one embodiment, the insulating layer 125 is formed on the gate electrode 120 and the gate insulating layer 115. The source electrode 132 and the drain electrode 134 are respectively filled in the openings O1 and O2 in the insulating layer 125 and are electrically connected to the semiconductor layer 110. The source electrode 132 is electrically connected to the data line DL.

In this embodiment, the active device TFT is manufactured using, for example, Low Temperature Poly-silicon (LTPS), but the invention is not limited thereto. The present invention can also use other types of active element TFTs or other methods of manufacturing active element TFTs.

In this embodiment, the scanning line SL has a scanning line slit 120O, and the scanning line slit 120O of the scanning line SL overlaps a part of the thin line P1. In this embodiment, each scanning line SL has, for example, a plurality of scanning line slits 120O, and each scanning line slit 120O corresponds to a pixel region PR, but the present invention is not limited thereto. In other embodiments, a plurality of scanning line slits 120O may correspond to one pixel region PR, or a scanning line slit 120O may correspond to a plurality of pixel regions PR. In this embodiment, the extending direction of the scanning line slit 120O is substantially parallel to the extending direction D2 of the corresponding scanning line SL. In one embodiment, the width A1 of the scan line SL is, for example, between 1 μm and 6 μm, and the width W2 of the scan line slit 120O is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W2 of the scan line slit 120O is substantially 1% to 50% of the width A1 of the corresponding scan line SL. The measurement direction of the width W2 of the scanning line slit 120O is the same as the measurement direction of the width A1 of the scanning line SL. For example, the measurement is performed in the direction in which the scanning line SL extends in the direction D2.

In this embodiment, the data line DL has a data line slit 130O, and the data line slit 130O of the data line DL overlaps a part of the thin line P1. In this embodiment, each data line DL has, for example, a plurality of data line slits 130O, and each data line slit 130O corresponds to a pixel region PR, but the present invention is not limited thereto. In other embodiments, multiple data line slits 130O may correspond to one pixel region PR, or one data line slit 130O may correspond to multiple pixel regions PR. In this embodiment, the extending direction of the data line slit 130O is substantially parallel to the extending direction D1 of the corresponding data line DL. In one embodiment, the width A2 of the data line DL is, for example, between 1 μm and 6 μm, and the width W3 of the data line slit 130O is, for example, between 0.2 μm and 0.6 μm. In an embodiment, the width W3 of the data line slit 130O is substantially 1% to 50% of the width A2 of the corresponding data line DL. The width W2 of the data line slit 130O is the same as the measurement direction of the width A2 of the data line DL, and is measured in a direction perpendicular to the extending direction D1 of the data line DL, for example. In one embodiment, the data lines DL are zigzag. For example, the data lines DL on the upper and lower sides of each scan line SL have an included angle, and the data corresponding to the pixel region PR of the adjacent column. The lines DL have different extending directions, but the invention is not limited thereto. In some embodiments, the data line DL has only one extension direction, and the extension direction D1 is, for example, perpendicular to the extension direction D2.

In this embodiment, the first electrode 140A is a pixel electrode. The first electrode 140A is located in the pixel region PR and is electrically connected to the drain electrode 134 of the active device TFT. In one embodiment, the insulating layer 135 is formed on the source 132 and the drain 134, and the insulating layer 135 has an opening O3. The first electrode 140A fills the opening O3 and is electrically connected to the drain electrode 134. The first electrode 140A overlaps a part of the thin line P1. The first electrode 140A has a plurality of electrode slits 140O. In this embodiment, the extending direction of the electrode slit 140O is parallel to the extending direction D1 of the corresponding data line DL, but the present invention is not limited thereto. In other embodiments, there is an included angle between the extending direction of the electrode slit 140O and the extending direction D1 of the data line DL. In one embodiment, the electrode slit 140O may have another extending direction different from the extending direction D1 at a position near the scanning line SL, and by designing another extension at a position of the electrode slit 140O near the scanning line SL The orientation can further help the alignment of the liquid crystal. In one embodiment, the included angle between the lower polarizing slit P1O and the corresponding electrode slit 140O is between -15 degrees and 15 degrees or between 75 degrees and 105 degrees.

In this embodiment, the array substrate 10 includes a plurality of second electrodes 140B (not shown in FIG. 1A). The second electrode 140B overlaps the first electrode 140A, and an insulating layer 137 is interposed between the second electrode 140B and the first electrode 140A. The second electrode 140B has an opening O4 at a position corresponding to the opening O3, and therefore, the first electrode 140A does not contact the second electrode 140B. In this embodiment, the second electrode 140B is a common electrode, and the second electrode 140B is electrically connected to the common line CL in the peripheral region BR. The common line CL belongs to the same film layer as the data line DL, that is, is formed by patterning the same material layer. In this embodiment, the first electrode 140A is located above the second electrode 140B, but the present invention is not limited thereto. In other embodiments, the first electrode 140A is located below the second electrode 140B.

A lower alignment material layer 150 is formed. The lower alignment material layer 150 covers, for example, the first electrode 140A, the second electrode 140B, the active device TFT, and the lower polarizing pattern PL. The lower alignment material layer 150 is located above the lower polarizing pattern PL, for example. In one embodiment, a method of forming the lower alignment material layer 150 includes, for example, a spin coating method, a concave / convex plate printing, or an inkjet printing. In one embodiment, the lower alignment material layer 150 includes, for example, polyimide or other suitable polymer materials.

A light source module (not shown) is provided, and the lower polarizing pattern PL is located between the light source module and the lower alignment material layer 150. The light source module can emit, for example, non-polarized light UV, and the light UV includes, for example, ultraviolet light. In this embodiment, the light UV is radiated from the bottom to the top, for example, it enters the inside of the array substrate 10 from one side of the substrate B1. The light UV passes through the lower polarizing pattern PL and is converted into polarized light. Then, the lower alignment material layer 150 is light-aligned to convert the lower alignment material layer 150 into an alignment layer (not labeled).

In this embodiment, the lower polarized light pattern PL of the array substrate 10 itself is used to polarize the light UV emitted from the light source module, so there is no need to provide a polarizer on the light alignment machine. Therefore, the problem that the amount of accumulated light is insufficient in some regions can be solved. In this embodiment, the scan lines SL and the data lines DL all belong to different film layers from the lower polarization pattern PL, and some of the scan lines SL and some of the data lines DL overlap the thin line P1. Therefore, the light UV passing through the lower polarized light pattern PL is irradiated to the scan lines SL and the data lines DL. Since the scan line SL has a scan line slit 120O and the data line DL has a data line slit 130O. Therefore, the light UV emitted from the light source module can pass through the scanning line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scanning line SL and the data line DL can also be illuminated by the light UV. The alignment quality around the scan lines SL and the data lines DL is improved.

FIG. 2 is a schematic cross-sectional view of an array substrate 20 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 inherits the component numbers and parts of the embodiments of FIGS. 1A and 1B, in which the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIG. 2. In this embodiment, the lower polarization pattern PL is disposed on the outside of the substrate B1. In other words, the lower polarizing pattern PL and the shielding layer 100 in this embodiment are located on opposite sides of the substrate B1, respectively, and the lower polarizing pattern PL and the shielding layer 100 are not formed in the same process.

The array substrate 20 of this embodiment includes a lower polarizing pattern PL. The lower polarizing pattern PL of the array substrate 20 itself is used to polarize the light UV emitted from the light source module. There is no need to provide a polarizer on the light alignment machine. Therefore, the problem that the amount of accumulated light is insufficient in some regions can be solved. In this embodiment, the scan lines SL and the data lines DL all belong to different film layers from the lower polarization pattern PL, and some of the scan lines SL and some of the data lines DL overlap the thin line P1. Therefore, the light UV passing through the lower polarized light pattern PL is irradiated to the scan lines SL and the data lines DL. Since the scan line SL has a scan line slit 120O and the data line DL has a data line slit 130O. Therefore, the light UV emitted from the light source module can pass through the scanning line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scanning line SL and the data line DL can also be illuminated by the light UV. The alignment quality around the scan lines SL and the data lines DL is improved.

FIG. 3 is a schematic cross-sectional view of an array substrate 30 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 3 inherits the component numbers and parts of the embodiments of FIGS. 1A and 1B, in which the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIG. 3. In this embodiment, the lower polarization pattern PL belongs to the same film layer as the scan line SL and the gate electrode 120. In one embodiment, the lower polarized pattern PL, the scan line SL, and the gate electrode 120 are formed in the same process, and the formation method is, for example, a nano-imprint process or an exposure etching process. In this embodiment, since the light UV passing through the lower polarization pattern PL does not pass through the scan line SL, it is not necessary to provide a slit in the scan line SL.

The array substrate 30 of this embodiment includes a lower polarized pattern PL. The lower polarized pattern PL of the array substrate 30 itself is used to polarize the light UV emitted from the light source module, and it is not necessary to provide a polarizer on the light alignment machine. Therefore, the problem that the amount of accumulated light is insufficient in some regions can be solved. In this embodiment, the data line DL and the lower polarization pattern PL belong to different film layers, and a part of the data line DL may overlap the thin line P1. Therefore, the light UV passing through the lower polarized pattern PL is irradiated to the data line DL. The data line DL has a data line slit 130O. Therefore, the light UV emitted from the light source module can pass through the data line slit 130O, so that the lower alignment material layer 150 overlapping the data line DL can also be illuminated by the light UV, thereby improving the alignment quality around the data line DL.

FIG. 4 is a schematic top view of an array substrate 40 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 4 follows the component numbers and parts of the embodiments of FIGS. 1A and 1B, in which the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIG. 4. In this embodiment, each data line DL has a data line slit 130O, and the extending direction of the data line slit 130O is the extending direction D1 of the data line DL. In one embodiment, the data line slit 130O passes through the source electrode 132, for example. In this embodiment, each scanning line SL has a scanning line slit 120O, and the extending direction of the scanning line slit 120O is the extending direction D2 of the scanning line SL. In one embodiment, the scan line slit 120O may pass through the gate electrode 120, for example. Since the area occupied by the scanning line slits 120O and the data line slits 130O in this embodiment is large, more light UV can pass through the slits of the scanning line SL and the data line DL and align the lower alignment material layer. 150 performs light alignment.

The array substrate 40 of this embodiment includes a lower polarizing pattern PL. The lower polarizing pattern PL of the array substrate 40 itself is used to polarize the light UV emitted from the light source module. There is no need to provide a polarizer on the light alignment machine. Therefore, the problem that the amount of accumulated light in the panel is insufficient in some areas can be solved. In this embodiment, the scan lines SL and the data lines DL all belong to different film layers from the lower polarization pattern PL, and some of the scan lines SL and some of the data lines DL overlap the thin line P1. Therefore, the light UV passing through the lower polarized light pattern PL is irradiated to the scan lines SL and the data lines DL. Since the scan line SL has a scan line slit 120O and the data line DL has a data line slit 130O. Therefore, the light UV emitted from the light source module can pass through the scanning line slit 120O and the data line slit 130O, so that the lower alignment material layer 150 overlapping the scanning line SL and the data line DL can also be illuminated by the light UV. The alignment quality around the scan lines SL and the data lines DL is improved.

FIG. 5A is a schematic top view of an array substrate 50 according to an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along the line BB 'in Fig. 5A. It must be explained here that the embodiments of FIG. 5A and FIG. 5B inherit the component numbers and parts of the embodiments of FIGS. 1A and 1B, in which the same or similar symbols are used to indicate the same or similar components, and the same components are omitted. Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIG. 5A and FIG. 5B together. The array substrate 50 includes a substrate B2, a black matrix BM, an upper polarizing pattern PU, and a color filter 210.

The black matrix BM and the color filter element 210 are formed on a substrate B2. The color filter element 210 includes, for example, a plurality of different color filter patterns, such as a red filter pattern, a blue filter pattern, a green filter pattern, and a yellow filter pattern. The black matrix BM separates, for example, filter patterns of different colors. In one embodiment, the black matrix BM includes a first block 200A extending along the extending direction D2 and a second block 200B extending along the extending direction D1. The first block 200A and the second block 200B are interlaced with each other. In one embodiment, the first block 200A of the black matrix BM is set corresponding to the scan line SL, and the second block 200B of the black matrix BM is set corresponding to the data line DL, for example.

In one embodiment, the first block 200A of the black matrix BM has a plurality of first slits 200OA, and the second block 200B of the black matrix BM has a plurality of second slits 200OB. The extension direction of the first slit 200OA is the same as the extension direction D2 of the first block 200A, and the extension direction of the second slit 200OB is the same as the extension direction D1 of the second block 200B. The extending direction of the second slit 200OB is staggered with the extending direction of the first slit 200OA. The width A3 of the first block 200A is, for example, between 1 μm and 8 μm, and the width W4 of the first slit 200OA is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W4 of the first slit 200OA is substantially 1% to 50% of the width A3 of the corresponding first block 200A. The width W4 of the first slit 200OA is the same as that of the width A3 of the first block 200A. For example, the width W4 is measured in the direction of the vertical extension direction D2. The width A4 of the second block 200B is, for example, between 1 μm and 8 μm, and the width W5 of the second slit 200OB is, for example, between 0.2 μm and 0.6 μm. In one embodiment, the width W5 of the second slit 200OB is substantially 1% to 50% of the width A4 of the corresponding second block 200B. The width W5 of the second slit 200OB is the same as that of the width A4 of the second block 200B. For example, the width W5 is measured in the direction of the vertical extension direction D1.

An upper polarizing pattern PU is formed on the substrate B2. In one embodiment, an insulating layer 215 is provided between the upper polarizing pattern PU and the black matrix BM. In one embodiment, the upper polarizing pattern PU includes, for example, a plurality of thin lines P2 parallel to each other. In one embodiment, the upper polarizing pattern P2 has a plurality of parallel upper polarizing slits P2O. The width W6 of these upper polarizing slits P2O is between about 15 nm and 120 nm. At least part of the thin line P2 overlaps the black matrix BM and the color filter element 210. In one embodiment, at least part of the thin line P2 overlaps the first slit 200OA and the second slit 200OB of the black matrix BM.

An upper alignment material layer 250 is formed. The upper alignment material layer 250 covers, for example, the upper polarizing pattern PU, the black matrix BM, and the color filter element 210. In one embodiment, a method for forming the upper alignment material layer 250 is, for example, a spin coating method, a concave / convex plate printing, or an inkjet printing. In one embodiment, the upper alignment material layer 250 includes, for example, polyimide or other suitable polymer materials.

A light source module is provided, and the upper polarizing pattern PU is located between the light source module and the upper alignment material layer 250. The light source module can emit, for example, non-polarized light UV, and the light UV includes, for example, ultraviolet light. In this embodiment, the light UV is irradiated from top to bottom, for example, it enters the array substrate 50 from the outside of the substrate B2. The light UV passes through the upper polarizing pattern PU and is converted into polarized light. Then, the upper alignment material layer 250 is subjected to light alignment, so that the upper alignment material layer 250 is converted into an alignment layer.

The array substrate 50 of this embodiment includes an upper polarizing pattern PU. The upper polarizing pattern PU of the array substrate 50 itself is used to polarize the light UV emitted from the light source module, and it is not necessary to provide a polarizer on the light alignment machine. Therefore, the problem that the amount of accumulated light is insufficient in some regions can be solved. In this embodiment, the black matrix BM and the upper polarized pattern PU belong to different film layers, and a part of the black matrix BM may overlap the thin line P2. Therefore, the light UV passing through the upper polarizing pattern PU is irradiated to the black matrix BM. The black matrix BM has a first slit 200OA and a second slit 200OB. Therefore, the light UV emitted from the light source module can pass through the first slit 200OA and the second slit 200OB, so that the upper alignment material layer 250 overlapping the black matrix BM can also be illuminated by the light UV, thereby improving the black matrix. Alignment quality around BM.

FIG. 6 is a schematic cross-sectional view of an array substrate 60 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 6 follows the component numbers and parts of the embodiments of FIGS. 5A and 5B, in which the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIG. 6. In this embodiment, the upper polarizing pattern PU is disposed on the outside of the substrate B2. In other words, the upper polarized pattern PU and the black matrix BM in this embodiment are located on opposite sides of the substrate B2, respectively.

The array substrate 60 of this embodiment includes an upper polarizing pattern PU. The upper polarizing pattern PU of the array substrate 60 itself is used to polarize the light UV emitted from the light source module, and it is not necessary to provide a polarizer on the light alignment machine. Therefore, the problem that the amount of accumulated light is insufficient in some regions can be solved. In this embodiment, the black matrix BM and the upper polarized pattern PU belong to different film layers, and a part of the black matrix BM may overlap the thin line P2. Therefore, the light UV passing through the upper polarizing pattern PU is irradiated to the black matrix BM. The black matrix BM has a first slit 200OA and a second slit 200OB. Therefore, the light UV emitted from the light source module can pass through the first slit 200OA and the second slit 200OB, so that the upper alignment material layer 250 overlapping the black matrix BM can also be illuminated by the light UV, thereby improving the black matrix Alignment quality around BM.

FIG. 7 is a schematic cross-sectional view of a panel according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 7 follows the component numbers and parts of the embodiments of FIGS. 1A, 1B, 5A, and 5B. The same or similar reference numerals are used to indicate the same or similar components, and Explanation of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIG. 7. The panel includes an array substrate 10 and an array substrate 60, but the present invention is not limited thereto. The array substrate 10 in the panel may be replaced with the array substrate 20, 30, or 40 in the above embodiment, and the array in the panel. The substrate 60 may be replaced with the array substrate 50 in the above embodiment. The sealant S joins the array substrate 10 and the array substrate 60. The sealant S is, for example, located in the peripheral region BR of the panel. In one embodiment, the black matrix BM of the array substrate 60 overlaps the scan lines SL and the data lines DL of the array substrate 10. The first slit 200OA of the black matrix BM is substantially parallel to the extending direction D2 of the scan line SL, and the black The extending direction of the second slit 200OB of the matrix BM is substantially parallel to the extending direction D1 of the data line DL.

In one embodiment, there are a plurality of liquid crystal molecules LC between the array substrate 10 and the array substrate 60. In this embodiment, the liquid crystal molecules LC are exemplified by liquid crystal molecules that can be rotated or switched by a horizontal electric field or liquid crystal molecules that can be rotated or switched by a vertical electric field, but are not limited thereto.

The polarizing pattern P includes a lower polarizing pattern PL and an upper polarizing pattern PU, and the alignment material layer includes a lower alignment material layer 150 and an upper alignment material layer 250. In an embodiment, before the light source module emits light UV to pass through the lower polarizing pattern PL to perform light alignment on the lower alignment material layer 150, and before the light source module emits light UV to pass through the upper polarizing pattern PU to align the upper alignment material Before the layer 250 is optically aligned, the array substrate 10 and the array substrate 60 are bonded with the sealant S, but the present invention is not limited thereto. In other embodiments, after the light source module emits light UV to pass through the lower polarizing pattern PL to perform light alignment on the lower alignment material layer 150, and after the light source module emits light UV to pass through the upper polarizing pattern PU to align the upper alignment material After the layer 250 is optically aligned, the array substrate 10 and the array substrate 60 are bonded with a sealant S.

In this embodiment, the array substrate 60 includes a black matrix BM and a color filter element 210, but the present invention is not limited thereto. In other embodiments, the black matrix BM and the color filter element 210 may be located on the array substrate 10 to form a color filter on array (COA) structure. The array substrate 60 may not include The black matrix BM and the color filter element 210.

The array substrate of at least one embodiment of the present invention includes a polarizing pattern. The polarizing pattern of the array substrate itself is used to polarize the light emitted from the light source module, and a polarizer may not be required on the light alignment machine. Therefore, the problem that the amount of accumulated light is insufficient in some regions can be solved.

In one embodiment, the scanning lines and the data lines are different from the polarizing pattern, and some of the scanning lines and some of the data lines overlap the thin lines of the polarizing pattern. Therefore, the light passing through the polarized light pattern will illuminate the scanning lines and the data lines. In this embodiment, the scan line has a scan line slit and / or the data line has a data line slit. Therefore, the light emitted by the light source module can pass through the scanning line slits and the data line slits, so that the alignment material layer overlapping the scanning lines and the data lines can also be illuminated by the light, which improves the surroundings of the scanning lines and the data lines. Alignment quality.

In one embodiment, the black matrix has a first slit and a second slit. Therefore, the light emitted by the light source module can pass through the first slit and the second slit, so that the alignment material layer overlapping the black matrix can also be illuminated by the light, thereby improving the alignment quality around the black matrix.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

10, 20, 30, 40, 50‧‧‧ array substrates

150, 250‧‧‧ Alignment material layer

100‧‧‧ masking layer

105, 125, 135, 137, 215‧‧‧ insulation

110‧‧‧Semiconductor layer

115‧‧‧Gate insulation

120‧‧‧Gate

120O, 130O, 140O, P1O, P2O, 200OA, 200OB‧‧‧ slit

132‧‧‧Source

134‧‧‧ Drain

140A, 140B‧‧‧electrode

200A, 200B‧‧‧ blocks

210‧‧‧color filter

A1, A2, A3, A4, W1, W2, W3, W4, W5, W6‧‧‧Width

B1, B2‧‧‧ substrate

BM‧‧‧Black Matrix

BR‧‧‧Peripheral area

CL‧‧‧ Common Line

D1, D2‧‧‧ direction

DL‧‧‧Data Line

LC‧‧‧ Liquid Crystal Molecules

O1, O2, O3, O4‧‧‧ opening

P, PL, PU‧‧‧polarized pattern

PR‧‧‧ Pixel Area

P1, P2‧‧‧ thin line

S‧‧‧Sealant

SL‧‧‧scan line

TFT‧‧‧active element

UV‧‧‧light

FIG. 1A is a schematic top view of an array substrate according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the line AA 'and a part of the peripheral region of the array substrate in FIG. 1A. FIG. 2 is a schematic cross-sectional view of an array substrate according to an embodiment of the present invention. 3 is a schematic cross-sectional view of an array substrate according to an embodiment of the present invention. FIG. 4 is a schematic top view of an array substrate according to an embodiment of the present invention. FIG. 5A is a schematic top view of an array substrate according to an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along the line BB 'in Fig. 5A. FIG. 6 is a schematic cross-sectional view of an array substrate according to an embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a panel according to an embodiment of the present invention.

Claims (19)

A method for manufacturing a panel includes: providing an array substrate including a polarizing pattern; forming an alignment material layer on the array substrate; and providing a light source module, wherein the polarizing pattern is located between the light source module and the light source module. Between the alignment material layers, and the light emitted by the light source module passes through the polarizing pattern to perform optical alignment on the alignment material layer. The method for manufacturing a panel according to item 1 of the scope of patent application, wherein the array substrate further includes: a plurality of scan lines and a plurality of data lines; a plurality of active elements, which are electrically connected to the scan lines and the data lines, respectively. Connection; and a plurality of first electrodes, wherein the polarizing pattern includes a lower polarizing pattern, and the lower polarizing pattern overlaps at least part of the scanning lines and / or part of the data lines and / or the first electrodes, wherein the lower The polarizing pattern has a plurality of lower polarizing slits. The alignment material layer includes a lower alignment material layer. Light emitted by the light source module passes through the lower polarizing pattern to perform light alignment on the lower alignment material layer. The method for manufacturing a panel according to item 2 of the scope of patent application, wherein at least one of the scan lines has a scan line slit, and the extension direction of the scan line slit is substantially parallel to the extension of the corresponding scan line. In the direction, the width of the scan line slit is substantially 1% to 50% of the width of the corresponding scan line, and the lower polarization pattern and the scan lines belong to different film layers. The method for manufacturing a panel according to item 2 or item 3 of the scope of patent application, wherein at least one of the data lines has a data line slit, and the extending direction of the data line slit is substantially parallel to the corresponding one. The extension direction of the data line, the width of the data line slit is substantially 1% to 50% of the width of the data line, and the lower polarization pattern and the data lines belong to different film layers. The method for manufacturing a panel according to item 2 of the scope of patent application, wherein after the light emitted from the light source module passes through the lower polarizing pattern to perform light alignment on the lower alignment material layer, the method further includes bonding the adhesive with An array substrate and another array substrate. The method for manufacturing a panel according to item 2 of the scope of patent application, wherein before the light emitted from the light source module passes through the lower polarizing pattern to perform optical alignment on the lower alignment material layer, the method further includes bonding the adhesive with a piece of glue. An array substrate and another array substrate. The method for manufacturing a panel according to item 2 of the scope of patent application, wherein the first electrodes have a plurality of electrode slits, and the angle between the lower polarized slits and the corresponding electrode slits is -15 degrees to 15 Degrees or 75 degrees to 105 degrees. The method for manufacturing a panel according to item 7 of the scope of patent application, wherein the array substrate further includes a plurality of second electrodes electrically connected to at least one common line, and the first electrodes are respectively electrically connected to the corresponding active device. . The method for manufacturing a panel according to item 1 of the scope of patent application, wherein the array substrate further includes a black matrix, wherein the polarized pattern includes an upper polarized pattern, the upper polarized pattern at least partially overlaps the black matrix, and the upper polarized light The pattern includes a plurality of upper polarizing slits, the alignment material layer includes an upper alignment material layer, and light emitted by the light source module passes through the upper polarization pattern to perform light alignment on the upper alignment material layer. The method for manufacturing a panel according to item 9 of the scope of patent application, wherein the array substrate further includes a color filter element and overlaps the upper polarizing pattern. The method for manufacturing a panel according to item 9 of the scope of patent application, wherein the black matrix has a plurality of first slits, and a width of the first slits is substantially 1% to 50% of a width of the black matrix. The method for manufacturing a panel according to item 9 of the scope of patent application, further comprising: providing a plurality of liquid crystal molecules between the array substrate and another array substrate; and bonding the array substrate and the other array substrate with a glue, The other array substrate includes: a plurality of scan lines and a plurality of data lines; and a plurality of active elements, which are electrically connected to the scan lines and the data lines, respectively, wherein the black matrix overlaps the scan lines and the data lines. Data lines, the first slits are substantially parallel to the extending direction of the scanning lines, and the black matrix also has a plurality of second slits, and the extending directions of the second slits are substantially parallel to the The extension direction of the data line. An array substrate includes: a plurality of scan lines and a plurality of data lines; a plurality of active elements, which are electrically connected to the scan lines and the data lines, respectively; a plurality of first electrodes and a lower polarization pattern, and the lower polarization pattern Overlapped with the first electrodes, and the lower polarized light pattern has a plurality of parallel lower polarized light slits, wherein: at least one of the scan lines has a scan line slit, and overlaps with the lower polarized light pattern; and / Or at least one of the data lines has a data line slit and overlaps the lower polarized pattern. The array substrate according to item 13 of the scope of patent application, wherein the first electrodes have a plurality of electrode slits, and an included angle formed by one of the lower polarized slits and the corresponding one of the electrode slits is − 15 degrees to 15 degrees or 75 degrees to 105 degrees. The array substrate according to item 13 of the scope of patent application, wherein at least one of the scan lines has a scan line slit, and an extension direction of the scan line slit is substantially parallel to a corresponding extension direction of the scan line. The width of the scan line slit is substantially 1% to 50% of the width of the scan line, and the lower polarized light pattern and the scan lines belong to different film layers. The array substrate according to item 13 or item 15 of the scope of patent application, wherein at least one of the data lines has a data line slit, and the extending direction of the data line slit is substantially parallel to the corresponding data line. In the extending direction of the data line, the width of the data line slit is substantially 1% to 50% of the width of the data line, and the lower polarization pattern and the data lines belong to different film layers. An array substrate includes: a black matrix including a plurality of first slits; and an upper polarizing pattern including a plurality of upper polarizing slits, and the upper polarizing pattern overlaps the first slits of the black matrix. The array substrate according to item 17 of the scope of patent application, wherein the black matrix further includes a plurality of second slits overlapping the upper polarizing pattern, and the extending directions of the second slits are staggered to the first slits. Direction of extension. The array substrate according to item 17 of the scope of patent application, wherein the widths of the first slits are substantially 1% to 50% of the width of the black matrix, and the widths of the upper polarizing slits are about 15 nm. Up to 120 nm.